MN101CF74G中文资料
NAS410(中文版)
NAS 410（中文版）1 范围1.1 目的：本标准建立了从事无损检测（NDT，NDI或NDE）人员的资格鉴定及证书颁发的最低要求。
这些要求包括在航空航天制造、服务、维护和检修行业。
本标准中的NDT 术语同样适用于NDI和NDE。
注：在欧洲，术语“正式批准”一词表明员工经由雇主书面声明符合规范要求并有操作许可。
只有被列入本地或调整后的要求中时，才需要认证每一个EN ISO/CEI17024。
3.1中定义的术语“认证”作为术语“正式批准”的替代贯彻在本标准的全文中。
在书面程序中没有其他规定时，本标准中的认证包括操作许可。
1.2 应用：本标准适用于使用NDT方法进行材料、产品、零件、组件或子组件检测和/或验收的人员。
它也适用于对所用NDT技术可靠性负有直接责任，起草NDT称许或作业指导书、审核NDT设备、提供NDT技术支持或培训的人员。
本标准不适用于仅对无损检测人员作行政管理或监督的管理人员，不适用于某些研究人员，这些人员对经Ⅲ级人员批准并正处于发展中的NDT技术进行可操作性研究。
利用经过Ⅲ级人员规定的某一直接读数工具进行专门检测工作的NDT人员，不需要经过本标准进行资格鉴定与认证。
1.2.1 实施：本标准规定了NANDTB的使用，NANDTB在这里是唯一指定使用的认证机构，以前取得的NAS 410或EN 4179认证的人员只有在其现有证书过期时才需要重新证明其符合本标准的要求。
1.3 常用方法：本标准包括了对常见的NDT方法的详细要求：渗透检测 Liquid Penetrant（PT）磁粉检测 Magnetic Particle (MT)涡流检测 Eddy Current（ET）超声检测 Ultrasonic（UT）射线照相检测 Radiography（RT）红外热像检测 Thermography (IRT)错位散斑干涉检测 Shearography (ST)1.3.1 其它方法：被工程学、质量、认可的工程组织使用或主承包商有要求时本标准适用于其它现行的或新兴的NDT方法，使用这些方法决定所选材料、零部件、元件、子组件或组件的合格性与适用性。
台湾研华电气查询表
价格 2000 2000 2400 2900 2500 2000 2200 2600 3000 3000
备注
11 PCA-6186VE 12 PCA-6187 13 PCA-6188 14 序号 1 2 3 4 5 6 7 8 9 10 型号 PCI-1710 PCI-1710HG PCI-1710L PCI-1711 PCI-1711L PCI-1713 PCI-1712 PCI-1716 PCI-1716L PCI-1714
台湾研华系列PC总线工业控制产品系列
研华原装整机
序号 型号 描述 1 研华IPC-610H-PIII 6003V/PIII 1G/256M/80G/1.44M/52XCD/KB/MOUSE/USB 2 研华 PIC-610H-PIV 6006LV/P4 2.8G/512M/80G/1.44M/52XCD/KB/MOUSE/USB 3 研华 PIC-610H-PIV 6007LV/P4 3.0G/1G/160G/1.44M/52XCD/KB/MOUSE/USB 4 价格 6800 8600 9600 备注
平板电脑及键盘
描述 12" 彩色TFT LCD显示的平板PC、PIII500、64M、20G、触摸屏 15" 彩色TFT LCD显示的平板PC、PIII500、64M、20G、触摸屏 104键工业键盘 105键抽屉键盘 105键19"机柜抽屉键盘 价格 15000 20000 500 2400 3250 备注
工业级液晶屏
型号 FPM-3120 FPM-3150 FPM-3175 FPM-3190 描述 12“TFT 15“TFT 17“TFT 19“TFT 价格 8750 12910 25000 35500 备注
EPICF10050547NS中文资料(PCA Electronics)中文数据手册「EasyDatasheet - 矽搜」
10.0 12.0 15.0
18.0 22.0 27.0
33.0 39.0 47.0
56.0 68.0 82.0
100.0 1.5 1.8
2.2 2.7 3.3
3.9 4.7 5.6
6.8 8.2 10.0
12.0 15.0 18.0
22.0 27.0 33.0
39.0 47.0 56.0
68.0 82.0
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AX101470 72端口巨集以太网终端套件商品说明书
Product:AX10147072 Port GigaBIX Termination Kit, 72 PortProduct Description72 Port GigaBIX Termination Kit, 72 PortTechnical SpecificationsProduct OverviewPhysical Characteristics (Overall)ConnectorsMaterialsConstruction and DimensionsStrandingElectrical CharacteristicsInductanceMated ConnectionTemperature RangeOperating Temp Range:-10°C To +60°CMechanical CharacteristicsFootprint/Type:GigaBIXTool Compatibility:BIX Connecting Tool (A0270165)Termination InterfaceTermination Connection DurabilitiesFront IDC Connection200 insertionsRear IDC Connection200 InsertionsDimensions (WxHxD)Width Height Depth7.63915.281 4.527StandardsIEC Compliance:ISO/IEC 11801:2002Data Category:Category 6TIA/EIA Compliance:ANSI/TIA/EIA 568 C.2 Category 6Third Party Performance Verification:ETL - Verified Category 6Applicable Environmental and Other ProgramsEnvironmental Space:IndoorEU Directive Compliance:EU Directive 2002/95/EC (RoHS)EU RoHS Compliance Date2008-01-30(yyyy-mm-dd):SuitabilitySuitability - Indoor:YesFlammability, LS0H, Toxicity TestingSafety Listing:ACA,UL 1863 and CSA-C22.2Part NumberRelated Parts:GIGABIX CONNECTORS, MANAGEMENT RING, MANAGEMENT MODULE, PATCH COORD ORGANIZER, HORIZONTAL CHANEL PLATE, GIGABIX PATCH CORD, GIGABIX/MEDIAFLEX ADAPTORVariantsItem #Color UPCAX101470Black611589002813Product NotesIncluded Parts: 2 Wood Screws; 6 Designation strips; 12 Wire Guards; French and English Installation Guide; 2 Velcro Ties; 1 Termination Bar PackNotes:For proper installation refer to Installation Guide PX101813 (French) or PX101814 (English) included with the product or visit our web site at HistoryUpdate and Revision:Revision Number: 0.103 Revision Date: 07-28-2020© 2020 Belden, IncAll Rights Reserved.Although Belden makes every reasonable effort to ensure their accuracy at the time of this publication, information and specifications described here in are subject to error or omission and to change without notice, and the listing of such information and specifications does not ensure product availability.Belden provides the information and specifications herein on an "ASIS" basis, with no representations or warranties, whether express, statutory or implied. In no event will Belden be liable for any damages (including consequential, indirect, incidental, special, punitive, or exemplary damages) whatsoever, even if Belden has been advised of the possibility of such damages, whether in an action under contract, negligence or any other theory, arising out of or in connection with the use, or inability to use, the information or specifications described herein.All sales of Belden products are subject to Belden's standard terms and conditions of sale.Belden believes this product to be in compliance with all applicable environmental programs as listed in the data sheet. The information provided is correct to the best of Belden's knowledge, information and belief at the date of its publication. This information is designed only as a general guide for the safe handling, storage, and any other operation of the product itself or the one that it becomes a part of. The Product Disclosure is not to be considered a warranty or quality specification. Regulatory information is for guidance purposes only. Product users are responsible for determining the applicability of legislation and regulations based on their individual usage of the product.。
NBG-12 Series非编码传统手动火警拉线器说明书
NBG-12 SeriesNon-Coded Conventional ManualFire Alarm Pull StationsDN-6643:A1 • I-410GeneralThe NOTIFIE R NBG-12 Series is a cost-effective, feature-packed series of non-coded manual fire alarm pull stations. Itwas designed to meet multiple applications with the installer andend-user in mind. The NBG-12 Series features a variety of mod-els including single- and dual-action versions.The NBG-12 Series provides an alarm initiating input signal toconventional fire alarm control panels (FACPs) such as theSFP Series, and to XP Transponders. Its innovative design,durable construction, and multiple mounting options make theNBG-12 Series simple to install, maintain, and operate.Features•Aesthetically pleasing, highly visible design and color.•Attractive contoured shape and light textured finish.•Meets ADA 5 lb. maximum pull-force.•Meets UL 38, Standard for Manually Actuated Signaling Boxes.•E asily operated (single- or dual-action, model dependent), yet designed to prevent false alarms when bumped, shaken, or jarred.•PUSH IN/PULL DOWN handle latches in the down position to clearly indicate the station has been operated.•The word “ACTIVATE D” appears on top of the handle in bright yellow, further indicating operation of the station.•Operation handle features white arrows showing basic opera-tion direction for non-English-speaking persons.•Braille text included on finger-hold area of operation handle and across top of handle.•Multiple hex- and key-lock models available.•U.S. patented hex-lock needs only a quarter-turn to lock/ unlock.•Station can be opened for inspection and maintenance with-out initiating an alarm.•Product ID label viewable by simply opening the cover; label is made of a durable long-life material.•The words “NORMAL” and “ACTIVA TED” are molded into the plastic adjacent to the alarm switch (located inside).•Four-position terminal strip molded into backplate.•T erminal strip includes Phillips combination-head captive 8/32 screws for easy connection to Initiating Device Circuit (IDC).•Terminal screws backed-out at factory and shipped ready to accept field wiring (up to 12 AWG/3.1 mm²).•Terminal numbers are molded into the backplate, eliminating the need for labels.•Switch contacts are normally open.•Can be surface-mounted (with SB-10 or SB-I/O) or semi-flush mounted. Semi-flush mount to a standard single-gang, double-gang, or 4" (10.16 cm) square electrical box.•Backplate is large enough to overlap a single-gang backbox cutout by 1/2" (1.27 cm).•Optional trim ring (BG12TR).•Spanish versions (FUEGO) available (NBG-12LSP, NBG-12LPSP).•Designed to replace the legacy NBG-10 Series.•Models packaged in attractive, clear plastic (PVC), clam-shell-style, Point-of-Purchase packages. Packaging includesa cutaway dust/paint cover in shape of pull station.Construction•Cover, backplate and operation handle are all molded of durable polycarbonate material.•Cover features white lettering and trim.•Red color matches System Sensor’s popular SpectrAlert®Advance horn/strobe series.OperationThe NBG-12 manual pull stations provide a textured finger-hold area that includes Braille text. In addition to PUSH IN and PULL DOWN text, there are arrows indicating how to operate the sta-tion, provided for non-English-speaking people.Pushing in and then pulling down on the handle activates the normally-open alarm switch. Once latched in the down position, the word “ACTIVATED” appears at the top in bright yellow, with a portion of the handle protruding at the bottom as a visible flag. Resetting the station is simple: insert the key or hex (model dependent), twist one quarter-turn, then open the station’s front cover, causing the spring-loaded operation handle to return to its original position. The alarm switch can then be reset to its normal (non-alarm) position manually (by hand) or by closing the station’s front cover, which automatically resets the switch. SpecificationsPHYSICAL SPECIFICATIONS:ELECTRICAL SPECIFICATIONS:Switch contact ratings: gold-plated; rating 0.25 A @ 30 VAC or VDC. Auxiliary contact circuit (Terminals 3 & 4, NBG-12LA):rated to 3.0 A @ 30 VAC or VDC.6643cov.jpgDN-6643:A1 • 04/22/08 — Page 1 of 2Page 2 of 2 — DN-6643:A1 • 04/22/08NOTIFIER ®, SpectrAlert ® Advance , and System Sensor ® are registered trademarks of Honeywell International Inc.©2008 by Honeywell International Inc. All rights reserved. Unauthorized use of this document is strictly prohibited.This document is not intended to be used for installation purposes. We try to keep our product information up-to-date and accurate. We cannot cover all specific applications or anticipate all requirements.All specifications are subject to change without notice.For more information, contact Notifier. Phone: (203) 484-7161, FAX: (203) 484-7118.ENGINEERING/ARCHITECTURAL SPECIFICATIONSManual Fire Alarm Stations shall be non-code, with a key- or hex-operated reset lock in order that they may be tested, and so designed that after actual Emergency Operation, they cannot be restored to normal except by use of a key or hex. An operated station shall automatically condition itself so as to be visually detected as activated. Manual stations shall be constructed of red colored LE XAN (or polycarbonate equivalent) with clearly visible operating instructions provided on the cover. The word FIRE shall appear on the front of the stations in white letters,1.00 inches (2.54 cm) or larger.* Stations shall be suitable for surface mounting on matching backbox SB-10 or SB-I/O; or semi-flush mounting on a standard single-gang, double-gang, or 4" (10.16 cm) square electrical box, and shall be installed within the limits defined by the Americans with Disabilities Act (ADA) or per national/local requirements. Manual Stations shall be Under-writers Laboratories listed.NOTE: *The words “FIRE/FUEGO” on the NBG-12LSP and NBG-12LPS P shall appear on the front of the station in white letters,approximately 3/4" (1.905 cm) high.Pre-Signal ModelsThe NBG-12LPS and NBG-12LPSP pull stations are non-coded manual pull stations which provide a FACP with two normally open alarm initiating input signals. “Pre-signal” input is activated by pushing in, then pulling down, the dual-action handle. A “gen-eral” alarm input signal can be manually activated via a momen-tary rocker switch mounted inside the unit. This general alarm switch can only be accessed by opening the cover with the sup-plied key/lock. See diagram at right.Agency Listings and ApprovalsThe listings and approvals below apply to the NBG-12 Series pull stations. In some cases, certain modules may not be listed by certain approval agencies, or listing may be in process. Con-sult factory for latest listing status.•C(UL)US Listed: file S692.•CSFM approved: file 7150-0028:199.•FM approved (except NBG-12LPS, NBG-12LPSP).•MEA approved: file 67-02-E (NBG-12, NBG-12L, NBG-12LOB,NBG-12LA).•Lloyd’s Register type approved: file 93/60141 (E3) (NBG-12,NBG-12L, NBG-12LA, NBG-12LOB, NBG-12S).•U.S. Coast Guard approved: files 161.002/23/3 (AFP-200 with NBG-12, NBG-12L, NBG-12S ); 161.002/42/1 (NFS -640 with NBG-12, NBG-12L, NBG-12S ); 161.002/27/3 (AFP1010/AM2020 with NBG-12, NBG-12L, NBG-12S).•Patented: U.S. Patent No. D428,351; 6,380,846; 6,314,772;6,632,108.Product Line InformationNBG-12S: Single-action pull station with pigtail connections,hex lock.NBG-12: Dual-action pull station with SPST N/O switch, screw terminal connections, hex lock .NBG-12L: Dual-action pull station with SPST N/O switch,screw terminal connections, key lock .NBG-12LSP: Same as NBG-12L with E nglish/Spanish (FIRE/FUEGO) labeling.NBG-12LPS: Dual-action pull station with pre-signal option.NBG-12LPSP: Same as NBG-12LPS with E nglish/Spanish (FIRE/FUEGO) labeling.NBG-12LOB: Dual-action pull station with key lock, outdoor applications listings (NBG-12LO ), and backbox. Includes SB-I/O indoor/outdoor backbox, and sealing gasket. Model will also mount to WP-10 weatherproof backbox in retrofit applications.NOTE: NBG-12LO not available separately; NBG-12LO + approved backbox = NBG-12LOB.Outdoor applications listings apply to NBG-12LOB combination.NBG-12LA: Dual-action pull station with key lock and annuncia-tor contacts.SB-10: Surface-mount backbox, metal.SB-I/O: Surface-mount backbox, plastic. (Included with NBG-12LOB.)BG12TR: Optional trim ring for semi-flush mounting.WP-10: Outdoor use backbox.17021: Keys, set of two. (Included with key-lock pull stations.) 17007: Hex key, 9/64". (Included with hex-lock pull stations.) NOTE: For addressable NBG-12LX models, see data sheetDN-6726.6643d i m 2.w m f。
FAIRCHILD FQT7N10 100V N-Channel MOSFE 说明书
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!FQT7N10Absolute Maximum Ratings T C= 25°C unless otherwise notedParameterDrain-Source VoltageDrain Current- Continuous (T C = 25°C)- Continuous (T C = 70°C)Drain Current- PulsedGate-Source VoltageSOT-223FQT SeriesGDS(Note 4)(Note 4, 5)(Note 4, 5)(Note 4)Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 26mH, I AS = 1.7A, V DD = 25V, R G = 25 Ω, Starting T J = 25°C3. I SD ≤ 7.3A, di/dt ≤ 300A/µs, V DD ≤ BV DSS, Starting T J = 25°C4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%5. Essentially independent of operating temperatureBV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA100----V ∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250 µA, Referenced to 25°C --0.1--V/°C I DSS Zero Gate Voltage Drain Current V DS = 100 V, V GS = 0 V ----1µA V DS = 80 V, T C = 125°C ----10µA I GSSF Gate-Body Leakage Current, Forward V GS = 25 V, V DS = 0 V ----100nA I GSSRGate-Body Leakage Current, ReverseV GS = -25 V, V DS = 0 V-----100nAOn CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250 µA 2.0-- 4.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10 V, I D = 0.85 A --0.280.35Ωg FSForward TransconductanceV DS = 40 V, I D = 0.85 A--1.85--SDynamic CharacteristicsC iss Input Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz--190250pF C oss Output Capacitance--6075pF C rssReverse Transfer Capacitance--1013pFSwitching Characteristicst d(on)Turn-On Delay Time V DD = 50 V, I D = 7.3 A,R G = 25 Ω--725ns t r Turn-On Rise Time --2460ns t d(off)Turn-Off Delay Time --1335ns t f Turn-Off Fall Time --1950ns Q g Total Gate Charge V DS = 80 V, I D = 7.3 A,V GS = 10 V-- 5.87.5nC Q gs Gate-Source Charge -- 1.4--nC Q gdGate-Drain Charge--2.5--nCDrain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ---- 1.7A I SM Maximum Pulsed Drain-Source Diode Forward Current---- 6.8A V SD Drain-Source Diode Forward Voltage V GS = 0 V, I S = 1.7 A ---- 1.5V t rr Reverse Recovery Time V GS = 0 V, I S = 7.3 A,dI F / dt = 100 A/µs --70--ns Q rrReverse Recovery Charge--150--nCTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.ACEx™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN ™POP™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™UltraFET ®VCX™。
MOXA NE-4100系列网络启用器产品介绍说明书
P/N: 1802041000302*1802041000302*NE-4100 Series Quick Installation GuideVersion 5.1, December 2019Technical Support Contact Information /support Moxa Americas:Toll-free: 1-888-669-2872Tel: 1-714-528-6777Fax: 1-714-528-6778 Moxa China (Shanghai office): Toll-free: 800-820-5036 Tel: +86-21-5258-9955 Fax: +86-21-5258-5505 Moxa Europe:Tel: +49-89-3 70 03 99-0Fax: +49-89-3 70 03 99-99 Moxa Asia-Pacific: Tel: +886-2-8919-1230 Fax: +886-2-8919-1231 Moxa India:Tel: +91-80-4172-9088Fax: +91-80-4132-10452019 Moxa Inc. All rights reserved.OverviewThe MOXA NE-4100 Series of Network Enablers are serial-to-Ethernet embedded modules that come in 3 types: drop-in type (NE-4100T), RJ45 type (NE-4110S/A), and pin-header type (NE-4120S/A). MOXA provides a Starter Kit for each NE-4100 series module. Each Starter Kit contains an evaluation board that can be used to evaluate the modules and to develop applications. The following table lists the model names of all NE-4100 Series modules, along with the model names of the corresponding Starter Kits.Starter Kit Model NamesNE-4100 Series Model Names Standard ProgrammableNE-4100-ST NE-4100T NE-4100T-PNE-4110-ST NE-4110S NE-4110S-P NE-4110A NE-4110A-PNE-4120-ST NE-4120S NE-4120S-P NE-4120A NE-4120A-PPackage ChecklistEach NE-4100 series starter kit package contains the following items: • 1 NE-4100 series evaluation board• 1 universal power adaptor• 2 power cords• 1 null modem serial cable• 1 cross-over Ethernet cable• 1 quick installation guide (printed)• 1 warranty cardNotify your sales representative if any of the above items is missing or damaged.Hardware Installation ProcedureFollow these steps to prepare the module and evaluation board for testing and application development.STEP 1: Plug the NE-4100 module into the sockets on the top of the evaluation board.NE-4100-ST:After attaching the module to the evaluation board, the triangles on the module and evaluation board should line up.NE-4100-ST Starter KitNE-4110-ST:The module and evaluation board have two jumper arrays, each with a pin labeled 1. Be sure to connect the correct Pin 1 on the module to the correct Pin 1 on the evaluation board.NE-4110-ST Starter KitNE-4120-ST:The module and evaluation board have two jumper arrays, each with a pin labeled 1. Be sure to connect the correct Pin 1 on the module to the correct Pin 1 on the evaluation board.NE-4120-ST Starter KitNOTE For detailed information about the pin assignments, wiring, LED indicators, and board layouts, refer to Chapter 2 of the NE-4100 Series User’s Manual.STEP 2: Connect the 12 VDC power line with the evaluation board’s power jack.STEP 3: Use an RJ45 Ethernet cable to connect the NE evaluation board plus module to an Ethernet network. Note that for NE-4100T and NE-4120, the RJ45 Ethernet port is located on theevaluation board. For NE-4110, the RJ45 Ethernet port islocated on the module itself.STEP 4: Use the serial data cable to connect the evaluation board to a serial device.STEP 5: For NE-4110-ST and NE-4120-ST, use jumper JP2 on the evaluation board to select the proper serial interface. Seepages 3-6 and 3-7 of the NE-4100 Series User’s Manual fordetails.Software Utility Installation ProcedureNE-4100 ModuleSoftware Installation1.Start the “Network Enabler Administrator” setup program to beginthe installation. When the Welcome window opens, click on Next.2.When the Select Additional Tasks window opens, click on Next.3.Click on Install to install program files in the default directory.4.The Installing window reports the progress of the installation.5.Click on Finish to complete the installation.Module Configuration1.Start the “Network Enabler Administrator” program.2.Click on Configuration from the menu bar, and then selectBroadcast Search from the drop-down menu.3.After the search is finished, all NE-4100 modules that were foundwill be shown in the right panel of the Configuration window. Ifyou locate more than one module connected to this network, refer to the MAC address on the module(s) to determine which modules are the ones you wish to configure.4.Refer to pages 7-6 to 7-19 of the NE-4100 Series User’s Manualfor additional configuration instructions.NE-4100 Programmable ModuleSoftware Installation1.Start the “Network Enabler SDK” setup program to begin theinstallation. When the Welcome window opens, click on Next. 2.Select the target directory, and then click on Next when theSelect Destination Directory window opens.3.Click on Next when the Select Additional Tasks window opens.4.Click on Install. The Installing window will report the progress ofthe installation.5.Click on Finish to complete the installation.Module Configuration1.Start the “NE SDK Manager” program.2.Click on Search from the menu bar, and then select BroadcastSearch from the drop-down menu.3.After the search is finished, all NE-4100-P modules that werefound will be shown in the NE SDK Manager window. Refer to the “Network Enabler SDK 2 Programmer’s Guide” for additionalinformation about setting environment variables and developingapplications with NE-4100-P Series products.Reference MaterialThe following detailed user’s guides can be downloaded from Moxa’s product page under the NE-4100 Series’ product page.NE-4100 Standard Module•NE-4100 Series User’s ManualNE-4100-P Series•Network Enabler SDK 2 Programmer’s Guide•Network Enabler SDK 2 API Reference。
FQT7N10中文资料
150℃ 25℃
※ Notes : 1. V = 0V 2. 25G0Sμ s Pulse Test
10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
1.7
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
6.8
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.7 A
VGS(th) RDS(on)
Gate Threshold Voltage
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
VGS = 10 V, ID = 0.85 A
-- 0.28
D
S
G SOT-223
FQT Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
伊林思H700 系列3G 4G 双卡千兆路由器规格说明书
H700系列3G/4G双卡千兆路由器规格说明书产品概述H700系列路由器是伊林思科技有限公司基于无线网络需求，采用最新硬件系统平台，使用Linux软件系统引用最新技术研发出来的一款全新的，性能更为优异的物联网无线通信路由器产品。
采用工业级设计标准，它主要应用于行业用户的数据传输业务。
H700支持双SIM卡，双频WiFi，千兆网口及多种工作模式适合不同场景应用。
该产品采用高性能的32位嵌入式处理器,内嵌完备的TCP/IP协议栈,同时提供RS串口和10/100/1000M以太网接口。
集成IO端子座，提供串口或者GPIO接口。
串口分别提供RS-232、RS-485、TTL电平接口的透明传输模式，支持的VPN通信功能，采用IPSec/PPTP/L2TP/GRE/OpenVPN等VPN技术，企业级VPN隧道技术和防火墙技术，保证高安全性行业的数据安全，支持自动在线检测，实时动态刷新网络状态，保持链路畅通，产品以性能稳定、体积小、易于安装嵌入、抵抗环境能力强等优点，深受用户欢迎。
支持WEB/Telnet/Console/TR069/NMS管理系统等多种配置方式，其中用户面对的是WEB图形化管理配制界面，管理方便简单。
该产品已广泛应用于物联网产业链中的M2M/IoT行业，如物流快递柜、充电桩、金融、邮政、智能电网、智能交通、智能家居、智能建筑、环保监测、消防监控、安防监控、水利监测、公共安全、广告发布、供应链自动化、工业自动化、工业控制、地震监测、气象监测、数字化医疗、遥感勘测、仪表监测、农业、林业、水务、煤矿、石化等领域。
行业应用公共服务：物流快递柜、充电桩金融：银行储蓄点机房监控，移动性证券交易和信息查询，ATM机通信：电信机房动力环境监控，通信维护人员线路资料查询交通：GPRS/SMS/GPS 机动车辆监控调度系统；银行运钞车，邮政运输车监控调度公安：公安、110、交警车辆监控调度，公安移动性数据（身份证、犯罪档案等）查询，交警移动通信数据（车辆、司机档案等）查询热力：热力系统实时监控和维护电力：电力系统城市中电网实时监控和自动补偿，远程自动抄表；铁塔监控等；公司：移动办公及管理，其他外勤人员移动性数据查询工业：工业遥感，遥测，遥控信息回报气象：气象数据采集与传输水利：水文监测生活：煤气调压站实时数据采集自动控制，自来水；快递柜；污水管道，闸门、泵站与水厂实时监控维护电子商务：支持B2B、B2C的电子商务和电子支付、股票交易等监控: 视频监控, CCTV>>| 主要功能特性项目内容支持多种网络灵活选择全网通支持中国联通、中国电信、中国移动、中国广电等2G/3G/4G网络工业级应用设计采用高性能工业级无线模块；采用高性能工业级32位双核通讯处理器；支持低功耗模式，包括休眠模式、定时上下线、模式和定时开关机模式；采用金属外壳，保护等级IP30。
白皮书 EMC VNX FAST VP VNX5200 VNX5400 VNX5600 VNX5800 VNX7600 VNX8000详细介绍 20131101
术语........................................................................................................................ 5 简介........................................................................................................................ 6 对数据块使用 FAST VP ............................................................................................ 7
存储池 ............................................................................................................................... 7 同构池 ........................................................................................................................... 7 异构池 ........................................................................................................................... 8 存储层 ............................................................................................................................... 8 按层的 RAID 配置 ........................................................................................................... 9 极高性能层 .................................................................................................................... 9 性能层 ......................................................................................................................... 10 容量层 ......................................................................................................................... 10 有关使用层的考虑事项 ................................................................................................ 11 FAST VP LUN 管理 ............................................................................................................. 11 分层策略 ...................................................................................................................... 12 在存储池级别管理 FAST VP .............................................................................................. 14 位置调整计划 .............................................................................................................. 16 手动位置调整 .............................................................................................................. 17
lnfineon BTS 724G 说明书
Smart High-Side Power Switch Four Channels: 4 x 90m Ω Status FeedbackProduct Summary PackageOperating VoltageV bb5.5...40V Active channels one four parallelOn-state Resistance R ON 90m Ω 22.5m Ω Nominal load current I L(NOM) 3.3A 7.3A Current limitation I L(SCr) 12A 12AGeneral Description• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input anddiagnostic feedback, monolithically integrated in Smart SIPMOStechnology. •Providing embedded protective functionsApplications• µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads • All types of resistive, inductive and capacitve loads• Most suitable for loads with high inrush currents, so as lamps •Replaces electromechanical relays, fuses and discrete circuitsBasic Functions• Very low standby current • CMOS compatible input• Improved electromagnetic compatibility (EMC) • Fast demagnetization of inductive loads • Stable behaviour at undervoltage • Wide operating voltage range•Logic ground independent from load groundProtection Functions Block Diagram• Short circuit protection • Overload protection • Current limitation • Thermal shutdown• Overvoltage protection (including load dump) with externalresistor• Reverse battery protection with external resistor • Loss of ground and loss of V bb protection • Electrostatic discharge protection (ESD)Diagnostic Function• Diagnostic feedback with open drain output • Open load detection in OFF-state•Feedback of thermal shutdown in ON-stateFunctional diagramPin Definitions and FunctionsPin Symbol Function1,10, 11,12, 15,16, 19,20 V bb Positive power supply voltage . Design thewiring for the simultaneous max. short circuit currents from channel 1 to 2 and also for low thermal resistance 3 IN1 5 IN2 7 IN3 9 IN4 Input 1,2,3,4 activates channel 1,2,3,4 in case of logic high signal 18 OUT1 17 OUT214 OUT313 OUT4 Output 1,2,3,4 protected high-side power outputof channel 1,2,3,4. Design the wiring for the max. short circuit current 4 ST1/2 Diagnostic feedback 1/2,3/4of channel 1,2,3,4 8 ST3/4 open drain, low on failure 2 GND1/2 Ground of chip 1 (channel 1,2) 6 GND3/4 Ground of chip 2 (channel 3,4)Pin configurationMaximum Ratings at T j = 25°C unless otherwise specifiedParameter Symbol Values UnitSupply voltage (overvoltage protection see page 6) V bb 43VSupply voltage for full short circuit protection T j,start = -40 ...+150°CV bb 36V Load current (Short-circuit current, see page 6) I L self-limited A Load dump protection 1) V LoadDump = V A + V s , V A = 13.5 V R I 2) = 2 Ω, t d = 400 ms; IN = low or high, each channel loaded with R L = 13.5 Ω,V Loaddump 3) 60V Operating temperature range Storage temperature range T jT stg-40 ...+150-55 ...+150°C Power dissipation (DC)4) T a = 25°C: (all channels active)T a = 85°C: P tot 3.61.9WMaximal switchable inductance, single pulse V bb = 12V, T j,start = 150°C 4), see diagrams on page 10 I L = 3.3 A, E AS = 120 mJ, 0 Ω one channel: I L = 4.7 A, E AS = 140 mJ, 0 Ω two parallel channels:I L = 7.3 A, E AS = 160 mJ, 0 Ω four parallel channels:Z L16,51918mHElectrostatic discharge capability (ESD) IN: (Human Body Model) ST: out to all other pins shorted: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 R=1.5k Ω; C=100pFV ESD 1.04.08.0kVInput voltage (DC) see internal circuit diagram page 9 V IN -10 ... +16V Current through input pin (DC)Pulsed current through input pin 5) Current through status pin (DC) I IN I INpI ST±0.3±5.0±5.0mA1) Supply voltages higher than V bb(AZ) require an external current limit for the GND and status pins (a 150Ωresistor for the GND connection is recommended.2) R I= internal resistance of the load dump test pulse generator3) V Load dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 408394) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for V bbconnection. PCB is vertical without blown air. See page 14 5) only for testingThermal CharacteristicsParameter and Conditions SymbolValuesUnitmin typ maxThermal resistancejunction - soldering point6)7) eachchannel:R thjs-- -- 15K/Wjunction – ambient6)@ 6 cm2 cooling area one channel active:all channels active: R thja----4234----Electrical CharacteristicsParameter and Conditions, each of the four channels Symbol Values Unit at T j = -40...+150°C, V bb = 12 V unless otherwise specified min typ max6)Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V bbconnection. PCB is vertical without blown air. See page 147)Soldering point: upper side of solder edge of device pin 15. See page 148)not subject to production test, specified by design9)See timing diagram on page 12.Parameter and Conditions, each of the four channels Symbol Values Unit at T j = -40...+150°C, V bb = 12 V unless otherwise specified min typ maxOperating ParametersOperating voltage V bb(on) 5.5 --40V Undervoltage switch off10) T j =-40°C...25°C:V bb(u so) ----4.5VT j =125°C: -- -- 4.511)Overvoltage protection12) I bb =40 mA V bb(AZ) 414752VStandby current13)T j =-40°C...25°C: V IN =0; see diagram page 11T j =150°C: I bb(off) ----9--2030µAT j =125°C: -- -- 2011)Off-State output current (included in I bb(off))V IN =0; each channelI L(off)-- 1 5µAOperating current 14), V IN =5V,I GND = I GND1 + I GND2, one channel on:all channels on:I GND----0.62.41.24.8mAProtection Functions15)Current limit, V out = 0V, (see timing diagrams, page 12)T j =-40°C:T j =25°C: T j =+150°C: I L(lim) ----9--15--23----ARepetitive short circuit current limit,T j = T jt each channeltwo,three or four parallel channels (see timing diagrams, page 12)I L(SCr) ----1212----AInitial short circuit shutdown time T j,start =25°C: V out = 0V (see timing diagrams on page 12)t off(SC) --2--msOutput clamp (inductive load switch off)16)at V ON(CL) = V bb - V OUT, I L= 40 mAV ON(CL)41 47 52V Thermal overload trip temperature T jt150 -- --°C Thermal hysteresis ∆T jt-- 10 --K10) is the voltage, where the device doesn´t change it´s switching condition for 15ms after the supply voltagefalling below the lower limit of Vbb(on)11) not subject to production test, specified by design12)Supply voltages higher than V bb(AZ) require an external current limit for the GND and status pins (a 150Ωresistor for the GND connection is recommended). See also V ON(CL) in table of protection functions and circuit diagram on page 9.13)Measured with load; for the whole device; all channels off14)Add I ST, if I ST > 015) Integrated protection functions are designed to prevent IC destruction under fault conditions described in thedata sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.16)If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowestV ON(CL)Parameter and Conditions, each of the four channels Symbol Values Unit at T j = -40...+150°C, V bb = 12 V unless otherwise specified min typ max Reverse BatteryReverse battery voltage 17)-V bb -- -- 32V Drain-source diode voltage (V out > V bb ) I L = - 2.0 A, T j = +150°C-V ON -- 600 --mVDiagnostic CharacteristicsOpen load detection voltageV OUT(OL)11.72.8 4.0VInput and Status Feedback 18) Input resistance (see circuit page 9) R I 2.54.0 6.0k ΩInput turn-on threshold voltage V IN(T+)-- -- 2.5VInput turn-off threshold voltage V IN(T-) 1.0 -- --V Input threshold hysteresis∆ V IN(T) -- 0.2 --V Status change after positive input slope 19) with open loadt d(STon) -- 10 20µs Status change after positive input slope 19) with overloadt d(STon)30 -- --µs Status change after negative input slope with open loadt d(SToff) -- -- 500µs Status change after negative input slope 19) with overtemperature t d(SToff) -- -- 20µs Off state input current V IN = 0.4 V: I IN(off)5 -- 20 µA On state input current V IN = 5 V: I IN(on) 10 35 60µA Status output (open drain)Zener limit voltage I ST = +1.6 mA: ST low voltage I ST = +1.6 mA:V ST(high) V ST(low)5.4 -- -- -- --0.6V17) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-sourcediode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 4 and circuit page 9).18) If ground resistors RGND are used, add the voltage drop across these resistors.19) not subject to production test, specified by designTruth TableChannel 1 and 2 Chip 1IN1 IN2 OUT1 OUT2 ST1/2 Channel 3 and 4(equivalent to channel 1 and 2) Chip 2 IN3 IN4 OUT3 OUT4 ST3/4 Normal operationL L H H L H L H L L H H L H L H H H H H Open load Channel 1 (3) L H X X Z H X X L 20) HChannel 2 (4) X X L H X X Z H L 15) H Overtemperatureboth channelL X H L H X L L L L L L H L L Channel 1 (3) L H X X L L X X H LChannel 2 (4)X XL HX XL LH LL = "Low" Level X = don't care Z = high impedance, potential depends on external circuit H = "High" LevelStatus signal valid after the time delay shown in the timing diagramsParallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor.TermsLeadframe (V bb ) is connected to pin 1,10,11,12,15,16,19,20External R GND optional; two resistors R GND1, R GND2 = 150 Ω or a single resistor R GND = 75 Ω for reverse battery protection up to the max. operating voltage.20) L, if potential at the Output exceeds the OpenLoad detection voltageFigure 1a: V bb turn on:Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition:Figure 2b: Switching a lamp:INSTOUTLtVIFigure 3a: Turn on into short circuit:shut down by overtemperature, restart by coolingother channel: normal operationIN1Heating up of the chip may require several milliseconds, depending on external conditionsTiming diagramsAll channels are symmetric and consequently the diagrams are valid for channel 1 to channel 4Figure 3b: Turn on into short circuit:shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) IN1/2ST1 and ST2 have to be configured as a 'Wired OR' function ST1/2 with a single pull-up resistor.Figure 4a: Overtemperature: Reset if T j <T jtFigure 5a: Open load: detection in OFF-state, turn on/off to open loadOpen load of channel 1; other channels normal operationFigure 6a: Status change after, turn on/off to overtemperatureOvertemperature of channel 1; other channels normal operation。
AD7610中文
表1. 48引脚14/16/18位PulSAR的选择
CM4 Nano V1.0 数据手册说明书
CM4 NANO基于树莓派CM4的面向工业应用场景的计算机上海晶珩电子科技有限公司2023-01-09版权声明CM4 Nano及其相关知识产权为上海晶珩电子科技有限公司所有。
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上海晶珩电子科技有限公司明确保留对本手册的内容或部分内容进行修改或补充的权利，无需特别通知。
目录1产品概述 (5)1.1目标应用 (5)1.2规格参数 (5)1.3系统框图 (6)1.4功能布局 (6)1.5包装清单 (7)1.6订购编码 (7)2产品外观及结构 (8)2.1产品外观 (8)2.2产品照片 (8)2.3尺寸信息 (10)2.4Mount Dimensional Drawings (11)2.4.1导轨安装 (11)2.4.2墙面式安装 (12)3接口和连接器 (12)3.1前面板 (13)3.1.1电源输入 (13)3.1.2千兆以太网 (13)3.2后面板 (14)3.2.1指示灯 (14)3.2.2Micro SD卡 (14)3.2.3HDMI (14)3.2.4USB 2.0 (14)3.2.5USB 3.0 (15)3.3顶部面板 (15)3.3.1BOOT (16)3.3.240PIN (16)3.3.3Mini CSI (16)3.3.4HDMI DSI (16)3.4天线 (17)3.4.1WIFI/BT (17)4内部接口 (17)4.1电源输出 (17)4.2USB 3.0 Type-C (17)4.3RTC (17)4.4Buzzer (18)4.5HDMI FPC (18)5无线通信 (18)5.1WiFi (18)5.2Bluetooth (19)5.3天线 (19)5.3.1WiFi / BT天线 (19)6电气特性 (19)6.1电气参数 (20)7FAQ (20)8产品变更记录 (20)9关于我们 (20)9.1关于EDATEC (20)9.2联系方式 (21)1CM4 Nano是一款基于树莓派CM4的面向工业应用场景的计算机。
酷蝶产品知识
酷蝶进线常见问题
音乐和视频支持什么格式的？ 答：音乐支持MP3和WAV格式，视频支持avi、MP4、3GP、wma格式。 支持rmvb播放格式么？ 答：需要去下载专门的播放软件。 系统可以升级么？ 答：不可以的。 怎么下载软件？ 答：系统自带安卓软件商店，或者自己到安卓论坛下载。 QQ、炒股、办公软件（支持2007还是2003的，是否可以编辑）、游戏这 些软件是否任意下载安装？ 答：QQ软件是内置，腾讯QQ有专门的android系统版本，可不断升级更新。 但目前android系统1.5版本不支持flash，因此部分QQ的功能不能使用。办公 软件支持2003的，可以编辑，但要注册，这些游戏和软件在可以在网上任意 下载安装的
酷蝶进线常见问题
QQ语音支持吗？邮箱怎么接收邮件？word文档能编辑和能否保存出 来？ 答：1）QQ不支持语音 2）邮箱 A:邮箱设置向导 a、按菜单键，弹出应用程序列表。 b、点击“Email”图标后，出现邮箱设置向导将帮助你进行设置。 c、点击“Next”按钮。 d、滑动打开键盘，输入你的邮箱账号的E-mail地址和密码 e、点击“Next”按钮，选择你的邮箱类型是POP3还是IMAP。 f、再点击“Next”按钮，来检查邮箱收发服务器是否可用。 g、如果邮箱可用，将会自动进入你的收件箱。
尺寸/ 重量/ 系统
产品重量 产品类型 产品尺寸 电源类型 电池类型 使用时间 操作系统 语言支持 0.348Kg 平板 191 MM *119 MM *14MM AC100-240V.50-60HZ DC9V 2A电源适配器 聚合物电池 7.4V 2１00mA/h Wifi 上网时间 3.5H, Google Android 1.6 支持69国语言 待机72H
MRF101BN和MRF101AN RF 设备数据手册说明书
MRF101BN MRF101ANMRF101AN MRF101BN1RF Power LDMOS TransistorsHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETsThese devices are designed for use in VHF/UHF communications,VHF TV broadcast and aerospaceapplications as well as industrial,scientific and medical applications.The devices are exceptionally rugged and exhibit high performance up to 250MHz.Typical Performance:V DD =50VdcFrequency (MHz)Signal TypeP out (W)G ps (dB)ηD (%)13.56CW 130CW 27.179.627CW 130CW 24.081.540.68(1)CW 120CW 23.881.550CW 115CW 23.079.581.36CW 130CW 23.280.887.5–108CW 110CW 21.377.1136–174(2,3)CW104CW 21.276.5230(4)Pulse(100μsec,20%Duty Cycle)115Peak21.176.7Load Mismatch/RuggednessFrequency (MHz)Signal TypeVSWR P in (W)Test Voltage Result 40.68CW>65:1at all Phase Angles 0.64Peak (3dB Overdrive)50No Device Degradation 230Pulse(100μsec,20%Duty Cycle)>65:1at all Phase Angles1.8Peak (3dB Overdrive)50No Device Degradation1.Measured in 40.68MHz reference circuit (page 5).2.Measured in 136–174MHz VHF broadband reference circuit (page3.The values shown are the center band performance numbers across the indicated frequency range.4.Measured in 230MHz fixture (page 13).Features ∙Mirror pinout versions (A and B)to simplify use in a push--pull,two--up configuration∙Characterized from 30to 50V ∙Suitable for linear application∙Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation∙Included in NXP product longevity program with assured supply for a minimum of 15years after launchTypical Applications∙Industrial,scientific,medical (ISM)–Laser generation –Plasma etching –Particle accelerators–MRI and other medical applications–Industrial heating,welding and drying systems∙Radio and VHF TV broadcast ∙HF and VHF communications ∙Switch mode power supplies Document Number:MRF101ANRev.0,11/2018Technical Data1.8–250MHz,100W CW,50VWIDEBANDRF POWER LDMOS TRANSISTORSMRF101AN MRF101BNTO--220--3LMRF101BNTO--220--3LMRF101ANGSDDS GNote:Exposed backside of the packageand tab also serves as a source terminal for the transistor.BacksideSS2RF Device Data NXP SemiconductorsMRF101AN MRF101BN Table 1.Maximum RatingsRatingSymbol Value Unit Drain--Source Voltage V DSS –0.5,+133Vdc Gate--Source Voltage V GS –6.0,+10Vdc Operating VoltageV DD 50Vdc Storage Temperature Range T stg –65to +150︒C Case Operating Temperature Range T C –40to +150︒C Operating Junction Temperature Range (1,2)T J –40to +175︒C Total Device Dissipation @T C =25︒C Derate above 25︒CP D1820.91W W/︒CTable 2.Thermal CharacteristicsCharacteristicSymbol Value (2,3)Unit Thermal Resistance,Junction to CaseCW:Case Temperature 77︒C,150W CW,50Vdc,I DQ =100mA,40.68MHz R θJC 1.1︒C/W Thermal Impedance,Junction to CasePulse:Case Temperature 73︒C,113W Peak,100μsec Pulse Width,20%Duty Cycle,50Vdc,I DQ =100mA,230MHzZ θJC0.37︒C/WTable 3.ESD Protection CharacteristicsTest MethodologyClass Human Body Model (per JS--001--2017)1B,passes 1000V Charge Device Model (per JS--002--2014)C3,passes 1200VTable 4.Electrical Characteristics (T A =25︒C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOff CharacteristicsGate--Source Leakage Current (V GS =5Vdc,V DS =0Vdc)I GSS ——1μAdc Drain--Source Breakdown Voltage (V GS =0Vdc,I D =50mAdc)V (BR)DSS 133——Vdc Zero Gate Voltage Drain Leakage Current (V DS =100Vdc,V GS =0Vdc)I DSS——10μAdcOn CharacteristicsGate Threshold Voltage(V DS =10Vdc,I D =290μAdc)V GS(th) 1.7 2.2 2.7Vdc Gate Quiescent Voltage(V DS =50Vdc,I D =100mAdc)V GS(Q)— 2.5—Vdc Drain--Source On--Voltage (V GS =10Vdc,I D =1Adc)V DS(on)—0.45—Vdc Forward Transconductance (V DS =10Vdc,I D =8.8Adc)g fs—7.1—S1.Continuous use at maximum temperature will affect MTTF.2.MTTF calculator available at /RF/calculators .3.Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers.Go to /RF and search for AN1955.(continued)MRF101AN MRF101BN3RF Device DataNXP SemiconductorsTable 4.Electrical Characteristics (T A =25︒C unless otherwise noted)(continued)CharacteristicSymbolMinTypMaxUnitDynamic CharacteristicsReverse Transfer Capacitance(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C rss —0.96—pF Output Capacitance(V DS =50Vdc ±30mV(rms)ac @1MHz,V GS =0Vdc)C oss —43.4—pF Input Capacitance(V DS =50Vdc,V GS =0Vdc ±30mV(rms)ac @1MHz)C iss—149—pFTypical Performance —230MHz (In NXP 230MHz Fixture,50ohm system)V DD =50Vdc,I DQ =100mA,P in =0.9W,f =230MHz,100μsec Pulse Width,20%Duty Cycle Common--Source Amplifier Output Power P out —115—W Power Gain G ps —21.1—dB Drain EfficiencyηD—76.7—%Table 5.Load Mismatch/Ruggedness (In NXP 230MHz Fixture,50ohm system)I DQ =100mAFrequency (MHz)Signal TypeVSWR P in (W)Test Voltage,V DDResult230Pulse(100μsec,20%Duty Cycle)>65:1at all Phase Angles1.8Peak (3dB Overdrive)50No Device DegradationTable 6.Ordering InformationDeviceShipping InformationPackageMRF101AN MPQ =250devices (50devices per tube,5tubes per box)TO--220--3L (Pin 1:Gate,Pin 2:Source,Pin 3:Drain)MRF101BNTO--220--3L (Pin 1:Drain,Pin 2:Source,Pin 3:Gate)4RF Device Data NXP SemiconductorsMRF101AN MRF101BNTYPICAL CHARACTERISTICS1100V DS,DRAIN--SOURCE VOLTAGE(VOLTS)Figure1.Capacitance versus Drain--Source Voltage C,CAPACITANCE(pF)1010000.1MRF101AN MRF101BN5RF Device DataNXP Semiconductors40.68MHz COMPACT REFERENCE CIRCUIT (MRF101AN)—0.7"⨯2.0"(1.8cm ⨯5.0cm)Table 7.40.68MHz Performance (In NXP Reference Circuit,50ohm system)V DD =50Vdc,I DQ =100mA,P in =0.50W,CWFrequency (MHz)P out (W)G ps (dB)ηD (%)40.6812023.881.56RF Device Data NXP SemiconductorsMRF101AN MRF101BN 40.68MHz COMPACT REFERENCE CIRCUIT (MRF101AN)—0.7"⨯2.0"(1.8cm ⨯5.0cm)Figure 2.MRF101AN Compact Reference Circuit Component Layout and Assembly Example —40.68MHzFigure 3.MRF101AN Compact Reference CircuitBoardaaa--032274Table 8.MRF101AN Compact Reference Circuit Component Designations and Values —40.68MHzPartDescriptionPart NumberManufacturer B1Short RF Bead 2743019447Fair-Rite C1,C582pF Chip Capacitor GQM2195C2E820GB12D Murata C2,C4200pF Chip Capacitor GQM2195C2A201GB12D Murata C333pF Chip Capacitor GQM2195C2E330GB12D Murata C6,C7,C8,C9,C101000pF Chip Capacitor GRM2165C2A102JA01D Murata C111μF Chip Capacitor GJ821BR71H105KA12L Murata C12,C1310nF Chip Capacitor GRM21BR72A103KA01B Murata C141μF Chip Capacitor C3216X7R2A105K160AA TDK L1150nH Chip Inductor 0805WL151JT ATC L217.5nH,4Turn Inductor GA3095-ACL Coilcraft L3160nH Square Air Core Inductor 2222SQ-161JEC Coilcraft L4110nH Square Air Core Inductor 2222SQ-111JEB Coilcraft Q1RF Power LDMOS Transistor MRF101ANNXP R175Ω,1/4W Chip Resistor SG73P2ATTD75R0F KOA Speer PCBFR40.09",εr =4.8,2oz.CopperD113958MTLMRF101AN MRF101BN7RF Device DataNXP SemiconductorsTYPICAL CHARACTERISTICS —40.68MHz COMPACT REFERENCE CIRCUIT (MRF101AN)V GS ,GATE--SOURCE VOLTAGE (VOLTS)8060P o u t ,O U T P U T P O W E R (W A T T S )40 3.52.51.51100120014020Figure 4.CW Output Power versus Gate--SourceVoltage at a Constant Input PowerP in ,INPUT POWER (WATTS)8060P o u t ,O U T P U T P O W E R (W A T T S )40010012001402040.68101121f (MHz)P1dB (W)P3dB (W)Figure 5.CW Output Power versus Input PowerP out ,OUTPUT POWER (WATTS)Figure 6.Power Gain and Drain Efficiencyversus CW Output PowerG p s ,P O W E R G A I N (d B )ηD ,D R A I N E F F I C I E N C Y (%)25242802090705030302223262729806040201004060801001201400.5230.10.20.30.40.50.60.721201008RF Device Data NXP SemiconductorsMRF101AN MRF101BN40.68MHz COMPACT REFERENCE CIRCUIT(MRF101AN)fMHzZ sourceΩZ loadΩ40.6824.0+j12.614.2–j2.5Z source=Testcircuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measuredfromdrain toground.Figure7.Series Equivalent Source and Load Impedance—40.68MHzZ source Z load50Ω50ΩMRF101AN MRF101BN9RF Device DataNXP Semiconductors136–174MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)—0.7"⨯2.0"(1.8cm ⨯5.0cm)Table 9.136–174MHz VHF Broadband Performance (In NXP Reference Circuit,50ohm system)V DD =50Vdc,I DQ =100mA,P in =0.79W,CWFrequency (MHz)P out (W)G ps (dB)ηD (%)13511721.780.015510421.276.517510721.375.4136–174MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT(MRF101AN)—0.7"⨯2.0"(1.8cm⨯5.0cm)Figure8.MRF101AN Compact Reference Circuit Component Layout and Assembly Example—136–174MHzFigure9.MRF101AN Compact Reference Circuit BoardTable10.MRF101AN Compact VHF Broadband Reference Circuit Component Designations and Values—136–174MHz Part Description Part Number ManufacturerB1Short RF Bead2743019447Fair-RiteC139pF Chip Capacitor GQM2195C2E390GB12D MurataC2,C5,C6,C7,C8,C12510pF Chip Capacitor GRM2165C2A511JA01D MurataC368pF Chip Capacitor GQM2195C2E680GB12D MurataC427pF Chip Capacitor GQM2195C2E270GB12D MurataC910pF Chip Capacitor GQM2195C2E100FB12D MurataC111μF Chip Capacitor GJ821BR71H105KA12L MurataC1310nF Chip Capacitor GRM21BR72A103KA01B MurataC141μF Chip Capacitor C3216X7R2A105K160AA TDKL122nH Chip Inductor0805WL220JT ATCL212nH Chip Inductor0805WL120JT ATCL3,L4,L668nH Air Core Inductor1812SMS-68NJLC CoilcraftL512nH,3Turn Inductor GA3094-ALC CoilcraftQ1RF Power LDMOS Transistor MRF101AN NXPR175Ω,1/4W Chip Resistor SG73P2ATTD75R0F KOA SpeerPCB FR40.09",εr=4.8,2oz.Copper D113958MTLTYPICAL CHARACTERISTICS —136–174MHzCOMPACT VHF BROADBAND REFERENCE CIRCUIT (MRF101AN)20150f,FREQUENCY (MHz)26259085807565130120ηD ,D R A I N E F F I C I E N C Y (%)G p s ,P O W E R G A I N (d B )242322211715516016517070110P o u t ,O U T P U T P O W E R (W A T T S )14514017513519100180P in,INPUT POWER (WATTS)0P o u t ,O U T P U T P O W E R (W A T T S )806040200.40.61201000.20.8140 1.027202422807570G p s ,P O W E R G A I N (d B )20406026858025232110012014065605550ηD ,D R A I N E F F I C I E N C Y (%)Figure 10.Power Gain,Drain Efficiency and CW Output Power versus Frequency at a Constant Input PowerFigure 11.CW Output Power versus Input Power and FrequencyP out ,OUTPUT POWER (WATTS)Figure 12.Power Gain and Drain Efficiency versusCW Output Power and Frequency191817454035136–174MHz COMPACT VHF BROADBAND REFERENCE CIRCUIT(MRF101AN)f MHz Z sourceΩZ loadΩ135 6.8+j10.29.5+j5.2145 6.2+j10.29.9+j5.9155 5.3+j10.810.2+j6.2165 4.4+j11.910.0+j5.9175 3.9+j13.48.8+j5.0Z source=Test circuit impedance as measured fromgate to ground.Z load=Test circuit impedance as measured fromdrain to ground.Figure13.Series Equivalent Source and Load Impedance—136–174MHzZ source Z load50Ω50Ω230MHz FIXTURE(MRF101AN)—4.0"⨯5.0"(10.2cm⨯12.7cm)aaa--031939Figure14.MRF101AN Fixture Component Layout—230MHzTable11.MRF101AN Fixture Component Designations and Values—230MHzPart Description Part Number Manufacturer B1Long Ferrite Bead2743021447Fair-RiteC1,C2,C1018pF Chip Capacitor ATC100B180JT500XT ATCC343pF Chip Capacitor ATC100B430JT500XT ATCC4,C131000pF Chip Capacitor ATC800B102JT50XT ATCC50.1μF Chip Capacitor GRM319R72A104KA01D MurataC610nF Chip Capacitor C1210C103J5GACTU KemetC7 2.2μF Chip Capacitor C3225X7R1H225K TDKC847μF,16V Tantalum Capacitor T491D476K016AT KemetC951pF Chip Capacitor ATC100B510JT500XT ATCC1116pF Chip Capacitor ATC100B160JT500XT ATCC12470pF Chip Capacitor ATC800B471JW50XT ATCC140.1μF Chip Capacitor C1812104K1RACTU KemetC15 2.2μF Chip Capacitor C3225X7R2A225K TDKC16 2.2μF Chip Capacitor HMK432B7225KM-T Taiyo YudenC17220μF,100V Electrolytic Capacitor MCGPR100V227M16X26MulticompL139nH Chip Inductor1812SMS-39NJLC CoilcraftL246nH Chip Inductor1010VS-46NME CoilcraftL317.5nH,4Turn Inductor GA3095-ALC CoilcraftR1470Ω,1/4W Chip Resistor CRCW1206470RFKEA VishayPCB Rogers AD255C,0.030",εr=2.55,2oz.Copper D113651MTLTYPICAL CHARACTERISTICS —230MHz FIXTURE,T C =25_C (MRF101AN)0V GS ,GATE--SOURCE VOLTAGE (VOLTS)Figure 15.Output Power versus Gate--SourceVoltage at a Constant Input PowerP o u t ,O U T P U T P O W E R (W A T T S )P E A K755025 1.52 2.531251000.51P in ,INPUT POWER (dBm)PEAK 514943P o u t ,O U T P U T P O W E R (d B m )P E A K4733302127245318230110128f (MHz)P1dB (W)P3dB (W)Figure 16.Output Power versus Input PowerP out ,OUTPUT POWER(WATTS)PEAKFigure 17.Power Gain and Drain Efficiency versus Output Power and Quiescent CurrentG p s ,P O W E R G A I N (d B )ηD ,D R A I N E F F I C I E N C Y (%)3300806040203301080706050403020P out ,OUTPUT POWER (WATTS)PEAKFigure 18.Power Gain and Drain Efficiencyversus Output PowerG p s ,P O W E R G A I N (d B )ηD ,D R A I N E F F I C I E N C Y (%)0P out ,OUTPUT POWER (WATTS)PEAKFigure 19.Power Gain versus Output Powerand Drain--Source Voltage20G p s ,P O W E R G A I N (d B )16145075100182522150451001251503003002441393715230MHz FIXTURE (MRF101AN)f MHz Z sourceΩZ load Ω2302.1+j5.95.5+j3.2Z source =Test circuitimpedance as measured fromgate to ground.Z load=Test circuit impedance asmeasured from drain toground.Figure 20.Series Equivalent Source and Load Impedance —230MHzZ source Z load50Ω50ΩPACKAGE DIMENSIONSPRODUCT DOCUMENTATION,SOFTWARE AND TOOLS Refer to the following resources to aid your design process.Application Notes∙AN1955:Thermal Measurement Methodology of RF Power AmplifiersEngineering Bulletins∙EB212:Using Data Sheet Impedances for RF LDMOS DevicesSoftware∙Electromigration MTTF Calculator∙RF High Power Model∙.s2p FileDevelopment Tools∙Printed Circuit BoardsTo Download Resources Specific to a Given Part Number:1.Go to /RF2.Search by part number3.Click part number link4.Choose the desired resource from the drop down menuREVISION HISTORYThe following table summarizes revisions to this document.Revision Date Description 0Nov.2018∙Initial release of data sheetRF Device DataNXP Semiconductors How to Reach Us:Home Page: Web Support:/support Information in this document is provided solely to enable system and software implementers to use NXP products.There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.NXP reserves the right to make changes without further notice to any products herein.NXP makes no warranty,representation,or guarantee regarding the suitability of its products for any particular purpose,nor does NXP assume any liability arising out of the application or use of any product or circuit,and specifically disclaims any and all liability,including without limitation consequential or incidental damages.“Typical”parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications,and actual performance may vary over time.All operating parameters,including “typicals,”must be validated for each customer application by customer’s technical experts.NXP does not convey any license under its patent rights nor the rights of others.NXP sells products pursuant to standard terms and conditions of sale,which can be found at the following address:/SalesTermsandConditions .NXP and the NXP logo are trademarks of NXP B.V.All other product or service names are the property of their respective owners.E 2018NXP B.V.MRF101BN MRF101AN。
MN101EF29G中文资料
10-bit × 16-ch.
Display control function
LCD 55 segments × 4 commons (static, 1/2, 1/3, 1/4 duty) 1/3 bias, Usable if VLC1 ≤ VDD Buzzer output, remote control carrier signal output, high-current drive port Correcting address designation : up to 7 addresses possible In-circuit Emulator PX-ICE101E ＋ PRBV101E29-QFP100-P-1818B (Under development)
Serial interface
Serial 0 ~ 3 : UART (full duplex) / synchronous × 1 Serial ４ : multi master I²C / synchronous × 1 Serial 5 : I²C slave × 1 2 systems (External request/internal event request/software request maximum transfer cycles are 255)
MN101E29G
Type Internal ROM type ROM (byte) RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN101E29G Mask ROM 128K 6K QFP100-P-1818B (Under development) 50 ns (at 2.2 V to 5.5 V, 20 MHz) 50 ns (at 2.2 V to 5.5 V, 20 MHz) * at internal 2 , 3 , 4 , 5 , 6 , 8 , 10 times oscillation used MN101EF29G FLASH
HW_华为IPRAN产品配置原则介绍
1端口10GE子卡
12端口FE/GE-SFP子卡
12端口GE-RJ45子卡
40G母板ISUF-40/ISUF-40-B，2子卡 槽
2端口10GE子卡
20端口FE/GE子卡
24端口FE/GE子卡 12端口FE/GE子卡
1端口10GE＋10 端口FE/GE子卡
40G固定板：ISUI-41/ISUI-41-B
主控板: CXPJ/K（含业务接口2GE(光)+4FE(电)+16E1，2.5G容量 )，J表示E1为75欧，K表示E1为120欧 CXPG/H（含业务接口2GE(光)+4FE(电)+16E1，6.5G容量)，G表示E1为75欧，H表示E1为120欧 CXPI（含业务接口2GE(光)+4FE(电)+4FE(光)，6.8G容量 ) 业务板卡:
Solaris
小型机-Oracle M4000单机 大规模小型机(含磁盘阵列)-Oracle M4000单机 or above 超大规模小型机(含磁盘阵列)-Oracle M5000单机
Windows
普通规模PC服务器 中等规模PC服务器
HUAWEI TECHNOLOGIES CO., LTD.
Huawei Confidential
HUAWEI TECHNOLOGIES CO., LTD. Huawei Confidential Page 6
CX600高端路由器产品族
CX600CX600-X8 3.54T 800G CX600-
X16
交换容量（双向） 端口容量（单向） 转发能力 6.29T 1.6T
X3
1.08T 300G
CX600-X8
HUAWEI TECHNOLOGIES CO., LTD.
夜鹰X4 WiFi网络扩展器数据表说明书
EX7320 Boost Your Existing WiFi RangeThe Nighthawk® X4 WiFi Mesh Extender boosts your existing network range, delivering extreme AC dual band WiFi speeds of up to 2200Mbps with extra range. It works with any standard WiFi router and is ideal for HD video streaming andgaming. MU-MIMO allows you to gofaster by simultaneously streamingto multiple devices, while FastLane™technology improves performanceusing both WiFi bands. High-poweramplifiers and internal antenna arrayincreases range so you can get theconnectivity you need for iPads®,smartphones, laptops & more.™EXTEND | EXTREME RANGE & PERFORMANCE• E asily create a whole-home mesh WiFi with your existing router• E xtends coverage of your home’s WiFi with same WiFi name & security password• U ninterrupted 4K video streaming as you roam room-to-room• Push button setupSTREAM | ULTIMATE CONNECTIVITY• MU-MIMO enables simultaneous streaming of data for multiple devices • FastLane™ technology improves performance using both WiFi bands • G igabit port to connect to wired devices like smart TVs and game consoles to WiFiMOBILE | SMART ROAMING• A utomatically connects your mobile devices to the bestavailable WiFi• C ustom low-noise amplifier improves incoming transmission quality from mobile devices• N ighthawk® App—Get the most out of your router performance with customized settings• E asy setup with the push of a buttonMore Coverage. Smart Roaming. One WiFi Name.Existing WiFiSometimes your router does not provide the WiFi coverage you need.WiFi Mesh Extenderhard-to-reach areas.Nighthawk® App—Get more from your WiFi• Quick Setup—Get connected in just minutes• WiFi Settings—View your WiFi network name (SSID) and password • Device List—Check devices connected to the extender• Network Map—View extenders connected to the networkQuick WiFi SetupThis product comes with a limited warranty that is valid only if purchased from a NETGEAR authorized reseller.*90-day complimentary technical support following purchase from a NETGEAR authorized reseller.¹Works with devices supporting Wi-Fi Protected Setup® (WPS).Data throughput, signal range, and wireless coverage per sq. ft. are not guaranteed and may vary due to differences in operating environments of wireless networks, including without limitation building materials and wireless interference. Specifications are subject to change without notice. The product may not be compatible with routers or gateways with firmware that has been altered, is based on open source programs, or is non-standard or outdated.Indoor use only.NETGEAR, the NETGEAR Logo, and Nighthawk are trademarks of NETGEAR, Inc. Apple, the Apple logo and the Mac logo are trademarks of Apple Inc., registered in the U.S. and other countries. App Store is a service mark of Apple Inc., registered in the U.S. and other countries. Google Play and the Google Play logo are trademarks of Google LLC. Any other trademarks mentioned herein are for reference purposes only. ©2019 NETGEAR, Inc. NETGEAR, Inc. 350 E. Plumeria Drive, San Jose, CA 95134-1911 USA, /supportD-EX7320-2Package Contents• A C2200 Nighthawk ® X4 Mesh Extender (EX7320)• Quick start guidePhysical Specifications• Dimensions: 6.34 x 3.2 x 1.75 in (161 x 81.4 x 44.5 mm)• Weight: 0.66 lb (0.3 kg)Warranty• /warrantySupport• 90-day complimentary technical support*Ease of Use• Quick install with Nighthawk App • P ush ‘N’ Connect using Wi-Fi Protected Setup ® (WPS)1• Power on/off buttonSystem Requirements• 2.4 and/or 5GHz 802.11 a/b/g/n/ac wireless router or gateway• M icrosoft ® Internet Explorer 8.0, Firefox ® 20, Safari ® 5.1, Google Chrome ™ 25.0 browsers or higherSecurity• S tandards-based WiFi Security (802.11i, 128-bit AES encryption with PSK)Standards• IEEE ® 802.11 b/g/n 2.4GHz • IEEE ® 802.11 a/n/ac 5GHz • IEEE ® 802.11 k• O ne (1) 10/100/1000Mbps Gigabit Ethernet port with auto-sensingtechnology10。
自动化控制ip20分布式输入输出advantysstb新
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Serial interface
Serial 0 : synchronous type/UART (full-duplex) × 1 Clock source................ 1/2, 1/4 of system clock frequency; pulse output of timer counter 1 or 2; 1/2, 1/4, 1/16, 1/64 of OSC oscillation clock frequency, external clock Serial 1 : synchronous type/UART (full-duplex) × 1 Clock source................ 1/2, 1/4 of system clock frequency; pulse output of timer counter 2 or 3; 1/2, 1/4, 1/16, 1/64 of OSC oscillation clock frequency, external clock Serial 3 : synchronous type/single-master I²C × 1 Clock source................ 1/2, 1/4 of system clock frequency; pulse output of timer counter 2 or 3; 1/2, 1/4, 1/16, 1/32 of OSC oscillation clock frequency, external clock Serial 4 : I²C slave × 1 (Applicable for I²C high-speed transfer mode, 7-bit/10-bit address setting, general call)
Timer Counter
Timer counter 2 : 8-bit × 1 (square-wave output, added pluse (2-bit) system PWM output, PWM output, serial transfer clock output, event count, synchronous output event, simple pulse width measurement) (square-wave/PWM output to large current terminal PC5 possible) Clock source................ 1/2, 1/4 of system clock frequency; 1/1, 1/4, 1/16, 1/32, 1/64 of OSC oscillation clock frequency; 1/1 of XI oscillation clock frequency; external clock input Interrupt source ........... coincidence with compare register 2 Timer counter 3 : 8-bit × 1 (square-wave output, event count, generation of remote control carrier, serial transfer clock) Clock source................ 1/2, 1/8 of system clock frequency; 1/1, 1/4, 1/16, 1/64, 1/128 of OSC oscillation clock frequency; 1/1 of XI oscillation clock frequency; external clock input Interrupt source ........... coincidence with compare register 3 Timer counter 2, 3 can be cascade-connected. Timer counter 6 : 8-bit freerun timer Clock source................ 1/1 of system clock frequency; 1/1, 1/128, 1/8192 of OSC oscillation clock frequency; 1/1, 1/128, 1/8192 of XI oscillation clock frequency Interrupt source ........... coincidence with compare register 6 Timer counter 7 : 16-bit × 1 (square-wave output, 16-bit PWM output (cycle / duty continuous variable), event count, synchronous output event, pulse width measurement, input capture, real time output control, high performance IGBT output (Cycle/Duty can be changed constantly)) (square-wave/PWM output to large current terminal PC4 possible) Clock source................ 1/1, 1/2, 1/4, 1/16 of system clock frequency; 1/1, 1/2, 1/4, 1/16 of OSC oscillation clock frequency; 1/1, 1/2, 1/4, 1/16 of external clock input frequency Interrupt source ........... coincidence with compare register 7 (2 lines), input capture register
MAD00048DEM
MN101C74F, MN101C74G
Timer counter 8 : 16 bit × 1 (square-wave/16-bit PWM output [duty continuous variable], event count, pulse width measurement, input capture) (square-wave/PWM output to large current terminal PC6 possible) Clock source................ 1/1, 1/2, 1/4, 1/16 of system clock frequency; 1/1, 1/2, 1/4, 1/16 of OSC oscillation clock frequency; 1/1, 1/2, 1/4, 1/16 of external clock input frequency Interrupt source ........... coincidence with compare register 8 (2 lines), input capture register Timer counters 7, 8 can be cascade-connected. (square-wave output, PWM is possible as a 32-bit timer.) Time base timer (one-minute count setting) Clock source................ 1/1 of OSC oscillation clock frequency; 1/1 of XI oscillation clock frequency Interrupt source ........... 1/128, 1/256, 1/512, 1/1024, 1/4096, 1/8192, 1/16384, 1/32768, of clock source frequency Watchdog timer Interrupt source ........... 1/65536, 1/262144, 1/1048576 of system clock frequency