V23990-P584-A中文资料

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变频器驱动电阻

文件名称文件编号
IGBT 门极驱动电阻参数表 IV-TSP-000954
页数：第 2 页共 18 页
文件修订信息记录表
序号
1 2
3 4
版本
A B
C
更改单号
/ /
/
修订原因及修订内容
新拟制
1、表 2 中新增 GD800 系列的内容。 2、表 5 中新增高压系列斯达模块和 ME4 模块。 3、表 3 中将中压 660V 上的 BSM75GB170DN2、
备注： 1、 BOM清单中的门极驱动电阻与本表有不同者，以本表数据为准。
文件名称文件编号
IGBT 门极驱动电阻参数表 IV-TSP-000954
页数：第 4 页共 18 页
表２ 380V系列变频器产品IGBT门极驱动电阻表
机型系列光板型号
CH系列
1160-A
1160-AS 1160-AT 1160-AF
V23990-P549-A01-PM
IKW08T120
IKW15N120T2
1.5kW GD10PJK120L1S
门极驱动电阻参数 Ω
R41=R43=R45=R47=R50=R53=R57=150/1206
R41=R43=R45=R47=R50=R53=R57=200/1206 R41=R43=R45=R47=R50=R53=R57=68/1206 R41=R43=R45=R47=R50=R53=R57=100/1206
7MBR25SA120
5.5kW
FP40R12KE3 FP40R12KT3 GD40PIT120C5S MUBW35-12A7 MUBW35-12E7
V23990-P580-A-PM

5841中文资料

FEATURES
I To 3.3 MHz Data-Input Rate
I CMOS, NMOS, TTL Compatible Inputs
I Internal Pull-Up/Pull-Down Resistors
I Low-Power CMOS Logic and Latches,
I High-Voltage Current-Sink Outputs
5 LOGIC SUPPLY
SERIAL-PARALLEL SHIFT REGISTER
6
SERIAL DATA OUT
LATCHES
7 STROBE
8
OUTPUT ENABLE (ACTIVE LOW)
MOS
BIPOLAR
18
17
16
15
14
13
12
11
10
OUT 1 OUT 2 OUT 3 OUT 4 OUT 5 OUT 6 OUT 7 OUT 8 K
TS . . . . . . . . . . . . . . . -55°C to +150°C
†For inductive load applications.
Caution: CMOS devices have input static protection but are susceptible to damage when exposed to extremely high static electrical charges.
SUB
1
POWER GROUND
9
Dwg. FP-013-2
A5841SLW & A5842SLW
POWER GROUND

AD584L中文资料

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 617/329-4700
Fax: 617/326-8703
元器件交易网
AD584–SPECIFICATIONS (@ VIN = +15 V and 25؇C)
30
LINE REGULATION (No Load) 15 V ≤ VIN ≤ 30 V (VOUT +2.5 V) ≤ VIN ≤ 15 V
LOAD REGULATION 0 ≤ IOUT ≤ 5 mA, All Outputs
OUTPUT CURRENT VIN ≥ VOUT +2.5 V Source @ +25°C Source TMIN to TMAX Sink TMIN to TMAX
4. The output of the AD584 is configured to sink or source currents. This means that small reverse currents can be tolerated in circuits using the AD584 without damage to the reference and without disturbing the output voltage (10 V, 7.5 V and 5 V outputs).
元器件交易网
a
FEATURES Four Programmable Output Voltages:
10.000 V, 7.500 V, 5.000 V, 2.500 V Laser-Trimmed to High Accuracies No External Components Required Trimmed Temperature Coefficient:

NEC单片机解密研究

NEC单片机解密研究NEC/瑞萨单片机系列破解研究－－早期Flash/ROM系列|目前，NEC第一代FLASH MCU制品分别采用0.35um和0.25um 工艺或 MASKROM制作，目前能够得到全面完美破解：早期78K0s:1. 型号命名规则：78F90**uPD789022,uPD789024,uPD789025,uPD789026,uPD78F9026uPD789046, uPD78F9046uPD789052, uPD789062, uPD78E9860, uPD78E9861,uPD789071,uPD789072,uPD789074 uPD78F9076uPD789086,uPD789088 uPD78F90882. 型号命名规则：78F91**uPD789101,uPD789102,uPD789104,uPD789111,uPD789112, uPD789114, uPD78F9116uPD789121,uPD789122,uPD789124,uPD789131,uPD789132, uPD789134, uPD78F9136uPD789166,uPD789167,uPD789176,uPD789177uPD78F91773. 78K0s/Kx1+ Lowpin 系列型号命名规则：78F92** 或78F95**uPD78F9200,uPD78F9201,uPD78F9202,uPD78F9500,uPD78F9501,uPD78F9502,uPD78F9210,uPD78F9211,uPD78F9212,uPD78F9510,uPD78F9511,uPD78F9512,uPD78F9221,uPD78F9222,uPD78F9224,uPD78F9232,uPD78F92344. 型号命名规则：78F93**uPD789304,uPD789306,uPD789314,uPD789316,uPD78F9314, uPD78F9316uPD789322,uPD789324,uPD789326,uPD789327,uPD78F93285. 型号命名规则：78F94**uPD789405,uPD789406,uPD789407,uPD789415,uPD789416, uPD789417, uPD78F9418uPD789425,uPD789426,uPD789435,uPD789436,uPD78F9436uPD789445,uPD789446,uPD789455,uPD789456,uPD78F9456uPD789462,uPD789464,uPD789466,uPD789467,uPD78F9468uPD789477,uPD789478,uPD789479,uPD789488,uPD789489, uPD78F9478，uPD78F9479, uPD78F9488，uPD78F9489,6. 型号命名规则：78F98**uPD789830,uPD789832,uPD789833,uPD789834,uPD789835 uPD78F9835uPD789841,uPD789842 uPD78F9842uPD789800 uPD78F9801uPD789881 uPD78F9882uPD789860,uPD789861,uPD789862uPD78E9860A,uPD78E9861A早期78K0:1. 型号命名规则：78F00**uPD780021,uPD780022,uPD780023,uPD780024,uPD780031,uPD780032,uPD780033,uPD780034,uPD78F0034uPD780053,uPD780054,uPD780055,uPD780056,uPD780058, uPD78F0058uPD780065,uPD780076,uPD780078,uPD78F0066,uPD78F0078,2. 78K0/Kx1 型号命名规则： 78F01**uPD780101,uPD780102,uPD780103, uPD78F0103,uPD780111,uPD780112,uPD780113,uPD780114,uPD78F0114,uPD780131,uPD780132,uPD780133,uPD780134,uPD780136, uPD780138, uPD78F0134,uPD78F0138,uPD780143,uPD780144,uPD780146,uPD780148,uPD78F0148,3. 78K0/Kx1+ 型号命名规则：78F01**H 或 7801**HuPD780101H,uPD780102H,uPD780103H, uPD78F0103H,uPD780111H,uPD780112H,uPD780113H,uPD780114H, uPD78F0114H,uPD780131H,uPD780132H,uPD780133H,uPD780134H,uPD7 80136H,uPD780138H, uPD78F0134H,uPD78F0138H,uPD780143H,uPD780144H,uPD780146H,uPD780148H, uPD78F0148H,例： uPD780102H 为著名的SONY PSP游戏机电池加密芯片4. 型号命名规则： 78F02**uPD780232,uPD780233, uPD78F0233,5. 型号命名规则： 78F03**uPD780306,uPD780308, uPD78P0308,uPD780316,uPD780318,uPD780326, uPD780328,uPD780336, uPD780338, uPD78F0338,uPD780343,uPD780344,uPD780353, uPD780354, uPD78F0354,7. 型号命名规则： 78F07**uPD78F0714,8. 型号命名规则： 78F08**uPD780861,uPD780862, uPD78F0862A,uPD780822,uPD780824,uPD780826,uPD780828,uPD78F0822B,uPD78F0828A,9. 型号命名规则： 78F09**uPD780957 uPD78F0958uPD780982,uPD780983,uPD780984,uPD780986,uPD780988, uPD78F0988A10. ASSP 型号命名规则： 78F80**uPD788004,uPD788005,uPD788006,uPD78F8004,uPD78F8005,uPD78F8006,全部V850:1. V850/Sx1/2/3 型号命名规则：70F30**uPD703014,uPD703015,uPD703017,uPD70F3015,uPD70F3017,uPD703030,uPD703031,uPD703032,uPD703033uPD70F3030,uPD70F3032,uPD70F3033uPD703034,uPD703035,uPD703036,uPD703037uPD70F3035,uPD70F3036,uPD70F3037uPD703068,uPD703069,uPD703088,uPD703089,uPD70F3089uPD780065,uPD780076,uPD780078,uPD78F0066,uPD78F0078,早期V850ES:1. V850ES/Sx1/2 型号命名规则：70F32** 汽车仪表盘uPD703200,uPD703201,uPD703204,uPD70F3201,uPD70F3204,uPD703249,uPD703260,uPD703261,uPD703262,uPD703263, uPD70F3261,uPD70F3263uPD703264,uPD703265,uPD703266,uPD70F3264,uPD70F3265,uPD70F3266,uPD703252,uPD703270,uPD703271,uPD703272,uPD703273, uPD70F3271,uPD70F3273uPD703274,uPD703275,uPD703276,uPD70F3274,uPD70F3275,uPD70F3276,uPD703253,uPD703280,uPD703281,uPD703282,uPD703283, uPD70F3281,uPD70F3283uPD703284,uPD703285,uPD703286,uPD70F3284,uPD70F3285,uPD70F3286,2. V850ES/Fx2 型号命名规则： 70F32** 工业控制，汽车电子uPD703230,uPD703231,uPD703232,uPD703233,uPD703234, uPD703235uPD70F3231,uPD70F3232,uPD70F3233,uPD70F3234,uPD70 F3235,uPD70F3236,uPD70F3237,uPD70F3238,uPD70F32393. V850ES/Ix 型号命名规则： 70F33** 70F37** 电机控制，空调变频器uPD703327,uPD703329, uPD70F3329uPD70F3713,uPD70F3714,4. V850ES/Kx1+ 型号命名规则： 70F33**uPD703302,uPD703313,uPD70F3302,uPD70F3306, uPD70F3308,uPD70F3311, uPD70F3313,uPD70F3316, uPD70F33185. V850ES/Hx2 型号命名规则： 70F37**uPD70F3700,uPD70F3701, uPD70F3702,uPD70F3703, uPD70F3704,uPD70F3706,uPD70F3707,uPD70F3710, uPD70F3711,uPD70F3712,6. V850ES/Jx2 型号命名规则： 70F37**uPD70F3715,uPD70F3716, uPD70F3717,uPD70F3718, uPD70F3719,uPD70F3720,uPD70F3721, uPD70F3722,uPD70F3723, uPD70F3724,7. V850ES/Kx2 型号命名规则： 70F37**uPD70F3726,uPD70F3728, uPD70F3729,uPD70F3731, uPD70F3732,uPD70F3733, uPD70F3734,8. V850ES/Sx3 型号命名规则： 70F33**uPD70F3333,uPD70F3334,uPD70F3335,uPD70F3336,uPD70F3340,uPD70F3341, uPD70F3342,uPD70F3343,uPD70F3344,uPD70F3345, uPD70F3346,uPD70F3347, uPD70F3348uPD70F3350,uPD70F3351, uPD70F3352,uPD70F3353, （奔驰C180~C260导航仪CAN协议IC）uPD70F3354,uPD70F3355, uPD70F3356,uPD70F3357, uPD70F3358uPD70F3364,uPD70F3365, uPD70F3366,uPD70F3367, uPD70F3368早期V850E1:1. V850E/Mx1/2/3 型号命名规则： 70F31**uPD703101,uPD703102, uPD70F3102uPD703105,uPD703106, uPD703107, uPD70F3107uPD703114,uPD703116, uPD703183,uPD703185,uPD703186, uPD70F3114,uPD70F3116, uPD70F3184,uPD70F3186, uPD703136,uPD703132, uPD703133,uPD703134, uPD70F31342. 安全气囊IC V850E/RS1 型号命名规则： 70F34**uPD70F3400,uPD70F3401上述型号解密周期为15~30天，企鹅是二六七一三六八七二四NEC第二代全FLASH MCU制品分别采用0.25/0.15um(MF2)工艺制作，称为ALL FLASH品。

tyco模块一览表

More than just powerTyco Electronics Power Systems isone of the market leaders of PowerModules for applications such asmotor drives, power supplies, weldingequipment as well as Solid StateRelays for the automation market. With24 different families of Power Modulesin a variety of sizes and configurations,such as PIM modules (combined inputrectifier, six pack output inverter withor without open emitters and b rakechopper), stand-alone six pack mod-ules, PFC- and H-bridge modules, TycoElectronics serves a broad range from5A to 100A at 600V and from 5A to150A at 1200V. All modules have incommon an NTC for temperature sens-ing. Tyco Electronics offers also twofully electronic relays potted into twostandard relay housings.level of integration, most suitable for low power frequency converters. Tyco Electronics Array PIMs are available in three different housings covering a power range from 5A to 70A at 600V and 5A to 75A at 1200V. All PIMs come with an input rectifier, an inverter six pack, a brake chopper and an NTC for temperature sensing. A striking attribute of Tyco Electronics smallest housing is its very fast and cost effective clip in assembly.Inverter Six Pack Modules suitable in particular for motion control applications are capable of handling currents up to 50A at 600V and 1200V. Their outstanding perfor-mance coupled with a low cost compact design is yet to be matched in the market.Inverter Half Bridge Modules are designed for motor control applications requiring currents up to 150A at 1200V. The small size together with the innovative flow through concept allows a very compact and easy to implement six pack arrangement meeting today’s and tomorrows demand.H-Bridge Modules for fast switching applications meet high requirements pertaining to component selection and package design. The usage of either MOSFETs with small R dson or the fastest IGBTs available, allows Tyco Electronics to offer a broad varietyof bridges for all kinds of switching modes (Hard Switching, Zero Voltage) to meet every need of the customer.Tyco Electronics offers stand alone PFC modules as well as its standard PIM modules with an integrated PFC. The stand-alone PFC modules are comprised of a half controlled input rectifier bridge limiting the inrush current and handling short circuits in the output. The built in low inductance capacitor allows to best short circuit high frequencies. PIM modules with integrated PFC come with an HF capacitor for best EMC performanceand ultra fast switching transistors and diodes for the PFC functionality.A d v a n t a g e sShunt ModulesIn particular for servo and vector drives where current sensing in the phases sometimes is required for monitoring the drive position and new technologies to even better serve its customers’ needs in the future.Application Note: IMC Driver BoardControl of 3~ asynchronous motor with U/F characteristics, where the micro controller integrated on the driver board via logic signals takes over the control of the high performance IGBT modules made by Tyco Electronics. With this device an economical system can be realized for the control of three phase systems.Available Module Packages:■flow 0, flow 1, flow 2, flat 1Advantages of Power Modules:■Integration of all active electronic power components ■High voltage isolation■Optimal mechanical and thermal interconnection ■Protection against environment ■Meet international standards (UL)■Compact module size ■Flow through concept ■Short gate connections761543289flow PIM ®2Part-N oV23990-P185-A10600V 50A V23990-P186-A10600V 75A V23990-P188-A101200V 25A V23990-P189-A101200V 35A V23990-P180-A101200V 50A V23990-P188-A201200V 35A V23990-P189-A201200V 50A V23990-P180-A201200V75Av o l t a g ec u r r e n t3533313451011896712flow PIM ®1Part-N oV23990-P81-A20600V 5A V23990-P82-A20600V 8A V23990-P83-A20600V 10A V23990-P84-A20600V 15A V23990-P85-A20600V 20A V23990-P86-A20600V 30A V23990-P89-A201200V 10A V23990-P80-A201200V 15A V23990-P481-A 600V 5A V23990-P482-A 600V 8A V23990-P483-A 600V 10A V23990-P484-A 600V 15A V23990-P485-A 600V 20A V23990-P486-A 600V 30A V23990-P487-A 1200V 10A V23990-P488-A 1200V 15A V23990-P480-A1200V25A v o l t a g e c u r r e n tflow PIM ®0Part-N oV23990-P541-A 600V 5A V23990-P542-A 600V 7A V23990-P543-A 600V 10A V23990-P544-A 600V 15A V23990-P545-A 600V 20A V23990-P549-A 1200V 10A V23990-P540-A1200V 15Av o l t a g ec u r r e n t0+EA l l m o d u l e s h a v e i n c o m m o n a n N T C f o r t e m p e r a t u r e s e n s i n g .flow PIM ®1+SPart-N oV23990-P321-A 600V 5A V23990-P322-A 600V 8A V23990-P323-A 600V 10A V23990-P324-A 600V 15A V23990-P325-A 600V 20A V23990-P329-A 1200V 10A V23990-P320-A1200V 15Av o l t a g ec u r r e n tflow PIM ®1+PPart-N oV23990-P303-B 600V 10A V23990-P304-B 600V 15A V23990-P305-B600V 20Av o l t a g ec u r r e n t576815 1613 1411 1216723458910 1112 1315 14flow PIM ®0+PPart-N oV23990-P371-B 600V 4A V23990-P372-B 600V 6A V23990-P370-B600V 10Av o l t a g ec u r r e n tPart-N oV23990-P381-A 600V 12A V23990-P382-A 600V 20A V23990-P380-A 600V 30A V23990-P380-D21600V 35A V23990-P385-A11600V 20A V23990-P386-A11600V 30A V23990-P387-A11600V40Ac u r r e nt1011flow PFC 0Part-N oV23990-P401-D01500V 2.5kW V23990-P401-D500V 4.5kWvo l t a gep o w e r 2111213876910141545V23990-P500-F01600V 35APart-N o : -FPart-N o: -F01fast PIM 1 Hv o l t a g e13876910141545PFC -IPMPart-N oV23990-P411-D230V 1.0kWI n p . v o l t -p o w e r 2Tyco ElectronicsPower SystemsRupert-Mayer-Strasse 4481359 Munich, Germany Tel.:+49 89 722-28457Fax.:+49 89 722-32936e-mail:power.switches@C o p y r i g h t © 2004, T y c o E l e c t r o n i c s , R a y c h e m G m b H , P o w e r S y s t e m s · P r i n t e d i n H u n g a r y · T E C .P S -023-1004.5-EHousing Dimensionsheight*: 17 mm width: 66mm depth: 32,5 mmheight*: 17,2 mm width: 82 mm depth: 37,4 mmheight*:17 mm width: 107,2 mm depth: 47 mmheight*:25 mm width: 80 mm depth: 70 mmThe information provided herein is believed to be reliable at press time. Tyco Electronics assumes no responsibility for inaccuracies or omis-sions. Tyco Electronics assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk.Prices and specifications are subject to change without notice. Tyco Electronics does not authorize or warrant any of its products for use in life-support devices and / or systems.flow PIM is a trademark of Tyco ElectronicsISO TS 16949 in Vorbereitungflow 0flow 1flow 2PFC-IPMTechnical data:W Up to 5 kW mechanical motor power (T h = 80°C, incl. 150% overload) W 3 phase Input RectifierW 3 phase IGBT Inverter + FRED with open emitter W Brake Chopper W UL-HousingW Clip In: The reliable interconnection between PCB and module W Alternative screw or clip mounting of heatsinkW Latest chip generation – trench field stop technologyC o p y r i g h t © 2005, T y c o E l e c t r o n i c s , R a y c h e m G m b H , P o w e r S y s t e m s · P r i n t e d i n H u n g a r y · T E C .P S -011-0805.2-Eflow 90PIM 1More and more of today's motor drive inverters require the heatsink to be in an up right position in respect to the PCB. For this kind of inverters Tyco Electronics introduces an innovative Power Module package with 90°mounting angle. This new package provides following benefits in addition to standard Power Module.Part-N ovoltage currentV23990-P631-A 600 V 6 A V23990-P632-A 600 V 10 A V23990-P633-A 600 V 15 A V23990-P634-A 600 V 20 A V23990-P635-A 600 V 30 A V23990-P639-A 1200 V 8 A V23990-P630-A1200 V 15 AThe information provided herein is believed to be re-liable at press time. Tyco Electronics,Power Systems assumes no responsibility for inaccuracies or omis-sions. Tyco Electronics, Power Systems assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. Tyco Electronics, Power Systems does not authorize or warrant any of its products for use in life-support devices and / or systems.Tyco Electronics Power SystemsFinsinger Feld 185521 Ottobrunn, Germany Tel.: +49 (0)89 6089-830Fax: +49 (0)89 6089-833em.customerservice@Part-N ovoltage currentV23990-P441-C20600 V 6 A V23990-P443-C20600 V 10 A V23990-P444-C20600 V 15 A V23990-P445-C20600 V 20 A V23990-P446-C20600 V 30 A V23990-P449-C201200 V 8 A V23990-P440-C201200 V15 APart-N ovoltage currentV23990-P541-A20600 V 6 A V23990-P543-A20600 V 10 A V23990-P544-A20600 V 15 A V23990-P545-A20600 V 20 A V23990-P546-A20600 V 30 A V23990-P549-A201200 V 8 A V23990-P540-A201200 V15 AHousing dimensions:Height: 25.8 mm / Width: 114.8 mm / Depth: 64 mmT y c o E l e c t r o n i c s , R a y c h e m G m b H , P o w e r S y s t e m s · P r i n t e d i n H u n g a r y · T E C .P S -010-0805.2-EPart-N o V23990-P562-F 10 600 V 75 AV23990-P563-F 10 600 V 100 AV23990-P564-F 10 600 V 150 AV23990-P565-F 10 600 V 200 AV23990-P565-F 600 V 200 A *V23990-P567-F10 1200 V 50 A V23990-P568-F10 1200 V 75 A V23990-P569-F10 1200 V 100 A **V23990-P569-F 1200 V 100 A */*** V23990-P560-F 1200 V 150 A **Improved thermal resistance**Max 25 HP / 29.41 kW at 150% over load factor ***Max 45 HP / 29.41 kW at 150% over load factorThe information provided herein is believed to be re-liable at press time. Tyco Electronics,Power Systems assumes no responsibility for inaccuracies or omis-Part-N o voltage current V23990-P569-F20 1200 V 100 A*V23990-P569-F21 1200 V 100 A**V23990-P569-F30 1200 V 100 A***V23990-P569-F31 1200 V100 A****Part-N ovoltage current V23990-P623-F 600 V 60 A*V23990-P623-F01600 V 60 A**V23990-P623-F10600 V 60 A***V23990-P623-F11600 V60 A****W Clip In: The reliable interconnection between PCB, module and heatsink Part-N ovoltage current V23990-P590-J 1200 V 105 A V23990-P600-I 1200 V 105 A V23990-P590-J10 1200 V 78 A *V23990-P600-I101200 V 78 A *Tyco Electronics Power SystemsP590-J10P600-I10*optimized for ZVS**optimized for Hard Switching ***reduced Rth, optimized for ZVS****reduced Rth, optimized for Hard Switching*reduced Rth, without capacitor **reduced Rth, with capacitor ***without capacitor ****with capacitor* half controlled bridgeTechnical data:W 3 phase IGBT Inverter W Gate DriverW 3 phase current sensing W DC Bus-voltage sensing W Temperature sensorW Power supply for drive and control circuit W Save isolation of all logic signalsHousing dimensions:Height: 19.9 mm / Width: 98.7 mm / Depth: 97 mmT y c o E l e c t r o n i c s , R a y c h e m G m b H , P o w e r S y s t e m s · P r i n t e d i n H u n g a r y · T E C .P S -012-0805.2-Eflyer IPMThe information provided herein is believed to be re-liable at press time. Tyco Electronics,Power Systems assumes no responsibility for inaccuracies or omis-Integrated Power Block – combining a ceramic substrate with power dice and a PCB with drive and logic components on a common metal base plate. Part-N ovoltage current V23990-P520-A1200 V 25 AIso Vcc1Insulated VoltageAmplifierIso VccIso Vcc2Iso Vcc3DC-DCDC+DC–Insulated Gatedrive I s o V c cI s o V c c 1I s o V c cI s o V c c 2I s o V c cI s o V c c 3I s o V c cI s o V c c 1I s o V c c 2I s o V c c 3Sixpack + shunts on DBCInsulated Gatedrive Isolation Current Amplifier Insulated Gatedrive Insulated Gatedrive Insulated Gatedrive Insulated GatedriveIsolation Current AmplifierIsolation Current AmplifierNTC 1NTC 2DC S H U L U H VL V H W L W I U I V I WNTC OutputDC Link Sense 6 x PWMCurrent Sense OutputsSAFETY ISOLATIONU V WD C e x t .D C e x t .D C e x t .D C e x t .Tyco Electronics Power Systemspress on – screw down – readyMiniSKiiP ®II. 3 - PIMPart-N o V23990-K249-A SKiiP 35 NAB 126 V11200V 50A Picture 1V23990-K240-ASKiiP 36 NAB 126 V11200V70APicture 1SEMIKRON EquivalentVoltageCurrent Schematic The MiniSKiiP ®products provide solder less connection to the PCB enabling fast and easy mounting. With the 2nd generation the power levels per given footprint have been further increased. The MiniSKiiP ®series now covers a current range from 8 to 50A at 600V and 8 to 70A at 1200V in various configurations.MiniSKiiP ®I. 3 - PIMPart-N o V23990-K136-A SkiiP 31 NAB 063 600V 32A Picture 1V23990-K137-A SkiiP 32 NAB 063 600V 57A Picture 1V23990-K138-A SkiiP 30 NAB 12 1200V 22A Picture 1V23990-K139-A SkiiP 31 NAB 12 1200V 30A Picture 1V23990-K130-A SkiiP 32 NAB 12 120 V 45A Picture 1V23990-K187-C SKiiP 31 NAC 063 600V 35A Picture 2V23990-K188-C SKiiP 32 NAC 063 600V 50A Picture 2V23990-K189-C SKiiP 31 NAC 12 1200V 30A Picture 2V23990-K180-CSKiiP 32 NAC 121200V45APicture 2SEMIKRON Equivalent Voltage Current Schematic MiniSKiiP ®II. 1 - PIMPart-N oV23990-K209-A01SKiiP 11 NAB 126 V11200V 8A Picture 1V23990-K200-A01SKiiP 12 NAB 126 V11200V15APicture 1SEMIKRON EquivalentVoltageCurrent Schematic MiniSKiiP ®I. 1 - PIMPart-N o V23990-K108-A SkiiP 10 NAB 063 600V 8A Picture 1V23990-K109-ASkiiP 11 NAB 063600V 10A Picture 1V23990-K150-C10SKiiP 11 NAC 063 I600V12APicture 3with Option 2SEMIKRON Equivalent VoltageCurrent Schematic height*: 16 mm width: 82mm depth: 59 mmheight*: 16 mm width:82 mm depth: 59 mmheight*: 16 mm width:42 mm depth: 40 mmheight*: 16 mm width: 42 mm depth: 40 mmC o p y r i g h t © 2004, T y c o E l e c t r o n i c s , R a y c h e m G m b H , P o w e r S y s t e m s · P r i n t e d i n G e r m a n y · T E C .P S -024-1004.5-ETyco Electronics Power Systems The information provided herein is believed to be reliable at press time. Tyco Electronics assumes no responsibility for inaccuracies or omis-sions. Tyco Electronics assumes no responsibility for the use of this information, and all MiniSKiiP ®I. 2 - PIMPart-N oV23990-K127-A SkiiP 21 NAB 063 600V 19A Picture 1V23990-K127-A10SkiiP 21 NAB 063 600V 19A Picture 3 with Option 1,2,3V23990-K128-A SkiiP 22 NAB 063 600V 21A Picture 1V23990-K128-A10-600V 21A Picture 3 with Option 1,2,3V23990-K129-A SkiiP 20 NAB 121200V 11A Picture 1V23990-K129-A10SkiiP 20 NAB 12 1200V 11A Picture 3 with Option 1,2,3V23990-K120-A SkiiP 22 NAB 12 1200V 15A Picture 1V23990-K120-A10SkiiP 22 NAB 12 1200V 15A Picture 3 with Option 1,2,3V23990-K167-C10SKiiP 20 NAC 063 600V 15A Picture 3 with Option 3V23990-K168-C10SKiiP 22 NAC 063 600V 25A Picture 3 with Option 3V23990-K169-C10SKiiP 20 NAC 12 1200V 11A Picture 3 with Option 2,3V23990-K160-C10SKiiP 22 NAC 121200V15APicture 3 with Option 3Voltage Current Schematic MiniSKiiP ®II. 2 - PIMPart-N oV23990-K229-A01SKiiP 23 NAB 126 V11200V 25A Picture 1V23990-K220-A01SKiiP 24 NAB 126 V11200V35APicture 1SEMIKRON EquivalentVoltage Current Schematic Option 3Option 1Option 2Picture 1Picture 2Picture 3SEMIKRON Equivalent height*:16 mm width: 59 mm depth: 52 mmheight*:16 mm width: 59 mm depth: 42 mmC o p y r i g h t © 2004, T y c o E l e c t r o n i c s , R a y c h e m G m b H , P o w e r S y s t e m s · P r i n t e d i n G e r m a n y · T E C .P S -026-1004.5-ETyco Electronics Power Systems press on – screw down – readyThe MiniSKiiP ®products provide solder less connection to the PCB enabling fast and easy mounting. With the 2nd generation the power levels per given footprint have been further increased. The MiniSKiiP ®series now covers a current range from 8 to 50A at 600V and 8 to 70A at 1200V in various configurations.MiniSKiiP ®II. 2 - sixpackPart-N oV23990-K238-F SKiiP 24 AC 126 V11200V 35A V23990-K239-F SKiiP 25 AC 126 V11200V 50A V23990-K230-FSKiiP 26 AC 126 V11200V70ASEMIKRON Equivalent Voltage Current MiniSKiiP ®II. 1 - sixpackPart-N oV23990-K218-F SKiiP 11 AC 126 V11200V 8A V23990-K219-F SKiiP 12 AC 126 V11200V 15A V23990-K210-FSKiiP 13 AC 126 V11200V25ASEMIKRON Equivalent Voltage Current MiniSKiiP ®I. 1 - sixpackPart-N o V23990-K116-F-600V 25A V23990-K117-F -600V 45A V23990-K118-F SkiiP 23 AC 12 1200V 25A V23990-K119-F -1200V 30A V23990-K110-FSkiiP 25 AC 121200V40ASEMIKRON Equivalent Voltage Current height*:16 mm width: 59 mm depth: 52 mmheight*: 16 mm width: 42 mm depth: 40 mmheight*: 16 mm width: 42 mm depth: 40 mmThe information provided herein is believed to be reliable at press time. Tyco Electronics assumes no responsibility for inaccuracies or omis-sions. Tyco Electronics assumes no responsibility for the use of this information, and all *Height equals to installation height。

P767A IGBT 模块

Brake IGBT
Collector-emitter break down voltage DC collector current Repetitive peak collector current Power dissipation Gate-emitter peak voltage Short circuit ratings Maximum Junction Temperature VCE IC ICpuls Ptot VGE tSC VCC Tjmax Tj≤150°C VGE=15V Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C 1200 35 40 75 112 170 ±20 10 900 175 V A A W V µs V °C
Unit
Inverter FWD
Peak Repetitive Reverse Voltage DC forward current Repetitive peak forward current Power dissipation Maximum Junction Temperature VRRM IF IFRM Ptot Tjmax Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C 1200 50 65 75 100 151 175 V A A W °C
Inverter IGBT
Collector-emitter break down voltage DC collector current Repetitive peak collector current Power dissipation Gate-emitter peak voltage Short circuit ratings Maximum Junction Temperature VCE IC ICpulse Ptot VGE tSC VCC Tjmax Tj≤150°C VGE=15V Tj=Tjmax tp limited by Tjmax Tj=Tjmax Th=80°C Tc=80°C Th=80°C Tc=80°C 1200 42 54 105 125 190 ±20 10 900 175 V A A W V µs V °C

P540

Brake Diode
Peak Repetitive Reverse Voltage DC forward current Repetitive peak forward current Power dissipation per Diode Maximum Junction Temperature VRRM IF IFRM Ptot Tjmax Tj=25°C Th=80°C Tc=80°C 1200 11 15 18 Th=80°C Tc=80°C 22 33 150 V A A W °C
copyright Vincotech
1
Revision: 2
V23990-P540-A01/ C01-PM
preliminary datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Typ Max
Unit
Input Rectifier Diode
Forward voltage Threshold voltage (for power loss calc. only) Slope resistance (for power loss calc. only) Reverse current VF Vto rt Ir Thermal grease thickness≤50um λ = 1 W/mK 1600 35 35 35 Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C 1 1,19 1,17 0,91 0,79 8 11 1,7 V V mΩ 0,1 mA

泰科V23990-P540全系列

flow PIM 01200V / 15AƔ Tyco clip-in housingƔ Trench Fieldstop IGBT's for low saturation losses Ɣ Optional w/o BRCƔ Industrial DrivesƔ Embedded GenerationƔ V23990-P540-A-PM Ɣ V23990-P540-C-PMParameterSymbolValueUnitInput Rectifier BridgeRepetitive peak reverse voltage V RRM 1600V Th =80°C 30T c =80°C 40T j =25°C 200T j =25°C 200Th =80°C 37T c =80°C54Maximum junction temperatureT j max150°CTransistor InverterV CE 1200V T h =80°C 16T c =80°C20Repetitive peak collector current I cpuls tp limited by T j max 32A T h =80°C 39T c =80°C 58,6Gate-emitter peak voltageV GE ±20V Tj 150°C VCC=900V VGE=15V Maximum junction temperature T j max150°C* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits10TypesConditionDC currentI FSMI FAV T j =T j maxFeaturesflow 0 housingTarget ApplicationsSchematicW I 2t-valuePower dissipation per Diode Collector-emitter break down voltage I C T j =T j max T j =T j maxt p =10msP tot I 2t A A A2s W Maximum RatingsForward current per diode Surge forward current P s t SC DC collector currentPower dissipation per IGBT SC withstand time*P tot AParameterSymbolValueUnitConditionMaximum RatingsDiode InverterT h =80°C 16T c =80°C20Repetitive peak forward current I FRM tp limited by T j max 31A T h =80°C 27T c =80°C 40,3Maximum junction temperatureT j max150°CTransistor BRCCollector-emitter break down voltage V CE 1200V T h=80°C 11T c =80°C 14Repetitive peak collector current I cpuls tp limited by T j max T h =80°C 22A T h =80°C 27T c =80°C41Gate-emitter peak voltageV GE ±20VTj 150°C VCE=900V VGE=15V Maximum junction temperature T j max 150°C* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuitsDiode BRCT h =80°C 12T c =80°C 16Repetitive peak forward current I FRM tp limited by T j max T h =80°C 24A T h =80°C 23T c =80°C35Maximum junction temperatureT j max150°CThermal propertiesStorage temperature T stg -40…+125°C Operation temperatureT op-40…+125°CInsulation propertiesInsulation voltage V ist=1min4000Vdc Creepage distance min 12,7mm min 12,7mmT j =T j max I F DC forward currentClearanceP tot T j =T j maxT j =T j max DC forward currentI F Power dissipation per Diode SC withstand time*t SCW W A A 10P sPower dissipation per IGBT DC collector currentI C T j =T j max T j =T j maxP tot W A T j =T j maxPower dissipation per Diode P totParameterSymbolUnitV GE (V) or V GS (V)V r (V) or V CE (V) or V DS (V)I C (A) or I F (A) or I D (A)T(C°)MinTypMaxInput Rectifier BridgeTj=25°C 1,221,45Tj=125°C 1,21Tj=25°C 0,91Tj=125°C 0,81Tj=25°C 0,01Tj=125°C 0,013Tj=25°C 0,01Tj=150°C4Thermal resistance chip to heatsink per chip R thJH 1,95K/W Thermal resistance chip to case per chipR thJC1,287K/WTransistor InverterTj=25°C 55,86,5Tj=125°C 15Tj=25°C 1,892,35Tj=125°C 2,19Tj=25°C 0,1Tj=125°C 2Tj=25°C 200Tj=125°CIntegrated Gate resistor R gint -Ohm Tj=25°C Tj=125°C 32Tj=25°C Tj=125°C 20Tj=25°C Tj=125°C 451Tj=25°C Tj=125°C 276Tj=25°C Tj=125°C 1,61Tj=25°C Tj=125°C 2,19Tj=25°C 1,1Tj=125°C Tj=25°C 0,058Tj=125°C Tj=25°C 0,048Tj=125°C 96015Tj=25°C 85Tj=125°CThermal resistance chip to heatsink per chip R thJH1,67K/W Thermal resistance chip to case per chipR thJC K/WDiode InverterTj=25°C 2,323Tj=125°C 1,78Tj=25°C Tj=125°C 31Tj=25°C Tj=125°C 355Tj=25°C Tj=125°C 3,5Tj=25°C Tj=125°C1,32Thermal resistance chip to heatsink per chip R thJH 2,64K/W Thermal resistance chip to case per chipR thJC1,7424K/WThermal greasethickness 50um Ȝ = 0,61 W/mKThermal grease thickness 50um Ȝ= 0,61 W/mKV A ns OhmmA 1500Reverse recovery energyV F I RM mWs P C Thermal grease thickness 50um Ȝ = 0,61 W/mKReverse leakage currentForward voltageThreshold voltage (for power loss calc. only)Slope resistance (for power loss calc. only)V F V to r t ValueConditionsV V Reverse recovery charge C rss Q Gate Turn-on energy loss per pulse Turn-off energy loss per pulse Q rr Diode forward voltage Peak reverse recovery current Reverse recovery time t rr Rgoff=20Ohmt d(on)000nF nF f=1MHzErec nC 2525251515V mA nA ns ns ns ns mWs nF V GE(th)V CE(sat)I CES VCE=VGE03030301200Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off Gate-emitter leakage current I GES C ies C oss t r E off t d(off)E on 0I r 20t f Gate chargeTurn-on delay time Rise timeTurn-off delay time V mWs 150,0006Reverse transfer capacitance Rgon=40Ohm Input capacitance Output capacitanceFall timeParameterSymbolUnitV GE (V) or V GS (V)V r (V) or V CE (V) or V DS (V)I C (A) or I F (A) or I D (A)T(C°)MinTypMaxValueConditionsTransistor BRCTj=25°C 55,86,5Tj=125°C Tj=25°C 1,872,7Tj=125°C 2,19Tj=25°C 0,05Tj=125°C 2Tj=25°C 200Tj=125°CTj=25°C Tj=125°C 34Tj=25°C Tj=125°C 20Tj=25°C Tj=125°C 442Tj=25°C Tj=125°C 284Tj=25°C Tj=125°C 0,917Tj=25°C Tj=125°C 1,47#BEZUG!Tj=25°C #BEZUG!Tj=125°C #BEZUG!Tj=25°C 0,037Tj=125°C Tj=25°C 0,029Tj=125°C f=1MHzTj=25°C 53Tj=125°CThermal resistance chip to heatsink per chip R thJH 2,56K/W Thermal resistance chip to case per chipR thJC1,6896K/WDiode BRCTj=25°C 1,82,5Tj=125°C 1,79Tj=25°C 250Tj=125°C 700Tj=25°C Tj=125°C 423Tj=25°C Tj=125°C 2,1Tj=25°C Tj=125°C0,88Thermal resistance chip to heatsink per chip R thJH 3,05K/W Thermal resistance chip to case per chipR thJC2,013K/WNTC ThermistorRated resistance R 25Tj=25°C 17,52229kOhm Deviation of R100D R/R R100=1503ȍTc=100°C 2,9%/K Power dissipation given Epcos-Type P Tj=25°C 210mW B-valueB (25/100)Tol. ±3%Tj=25°C4000KRgon=80Ohm 15600Rgon=80Ohm 15600Thermal grease thickness 50um Ȝ = 0,61 W/mKRgon=80Ohm 15600Thermal grease thickness 50um Ȝ = 0,61 W/mK15Rgoff=40Ohm 0,0003#BEZUG!Rgon=80OhmP Ws P C V P A ns Gate emitter threshold voltage VCE=VGECollector-emitter saturation voltage V GE(th)V CE(sat)15Collector-emitter cut-off Gate-emitter leakage current Turn-on delay time Integrated Gate resistor Turn-off energy loss per pulse Input capacitance Output capacitanceRise timeTurn-off delay time Fall timeTurn-on energy loss per pulse I CES I GES C ies E on E off R gint t d(on)t r t d(off)t f Reverse transfer capacitance Gate chargeC oss C rss Q Gate #BEZUG!1200060002010ns ns 10Ohm V V mA nA nF nF nF ns ns P Ws P Ws nC Diode forward voltage Reverse leakage current 10251200Reverse recovered charge Reverse recovery energyV F I r t rr Q rr E rec Reverse recovery timePackage Outline and PinoutOutlinePinoutPRODUCT STATUS DEFINITIONS Formative or In DesignFirst ProductionFull ProductionDISCLAIMERLIFE SUPPORT POLICYAs used herein:Preliminary This datasheet contains preliminary data, andsupplementary data may be published at a later date. Tyco Electronics reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for teFinal This datasheet contains final specifications. TycoElectronics reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff.Target Product StatusDatasheet StatusDefinitionThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. Tyco Electronics reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Tyco Electronics does not assume any liability arising out of the application or use of any product or circuit deTyco Electronics products are not authorised for use as critical components in life support devices or systems without the express written approval of Tyco Electronics.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in la2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.V23990-P540-A-PMfinal datasheetOutput inverterFigure 1.Typical output characteristicsFigure 2.Typical output characteristicsOutput inverter IGBTOutput inverter IGBTIc= f(V CE )parameter: tp = 250 ms Tj = 25 °Cparameter: tp = 250 ms Tj = 125 °CV GE parameter:from:7V to 17VV GE parameter:from:7V to 17Vin 1V steps in 1V stepsFigure 3.Typical transfer characteristicsFigure 4.Typical diode forward current asOutput inverter IGBTa function of forward voltageF F parameter: tp = 250 ms V CE = 10Vparameter: tp = 250 msFigure 5.Typical switching energy losses Figure 6.Typical switching energy losses as a function of collector current as a function of gate resistor Output inverter IGBTOutput inverter IGBTinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =40W Ic =15AFigure 7.Typical switching times as aFigure 8.Typical switching times as a function of collector current function of gate resistor Output inverter IGBTOutput inverter IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °Cinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V RG on = 2*R Goff =40W Ic =15AFigure 9.Typical reverse recovery time as a Figure 10.Typical reverse recovery current as afunction of IGBT turn on gate resistor function of IGBT turn on gate resistor Output inverter FRED diodeOutput inverter FRED diodet rr = f (Rgon)I RRM = f (Rgon)Tj =125°C Tj =125°C V R =600V V R =600V I F =15A I F =15AFigure 11.Typical reverse recovery charge as aFigure 12.Typical rate of fall of forwardfunction of IGBT turn on gate resistor and reverse recovery current as a Output inverter FRED diodefunction of IGBT turn on gate resistor Q rr = f (Rgon)Output inverter FRED diode dI0/dt,dIrec/dt = f (Rgon)Tj =125°C Tj =125°C V R =600V V R =600V I F =15A I F =15AV23990-P540-A-PMfinal datasheetOutput inverterFigure 13.IGBT transient thermal impedanceFigure 14.FRED transient thermal impedanceas a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH=2,64K/WIGBT thermal model values FRED thermal model values R (C/W)Tau (s)R (C/W)Tau (s)0,035,5E+010,045,2E+010,092,7E+000,161,8E+000,324,6E-010,742,4E-010,821,4E-011,176,3E-020,342,8E-020,415,8E-030,125,5E-030,147,8E-040,106,2E-04V23990-P540-A-PMfinal datasheetOutput inverterFigure 15.Power dissipation as aFigure 16.Collector current as afunction of heatsink temperature function of heatsink temperature Output inverter IGBTOutput inverter IGBTP tot = f (Th)I c = f (Th)V GE =15VFigure 17.Power dissipation as aFigure 18.Forward current as afunction of heatsink temperaturefunction of heatsink temperature Output inverter FREDOutput inverter FREDP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CV23990-P540-A-PMfinal datasheetBrakeFigure 19.Typical output characteristicsFigure 20.Typical output characteristicsBrake IGBTBrake IGBTIc= f(V CE )Ic= f(V CE )parameter: tp = 250 ms Tj = 25 °Cparameter: tp = 250 msTj = 125 °CV GE parameter:from:7V to 17VV GE parameter:from:7V to 17Vin 1V stepsin 1V stepsFigure 21.Typical transfer characteristicsFigure 22.Typical diode forward current asBrake IGBTa function of forward voltageIc= f(V GE )Brake FREDI F =f(V F )parameter: tp = 250 ms V CE = 10 Vparameter: tp = 250 msV23990-P540-A-PMfinal datasheetBrakeFigure 23.Typical switching energy lossesFigure 24.Typical switching energy lossesas a function of collector current as a function of gate resistor Brake IGBTBrake IGBTE = f (Ic)E = f (R G )inductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80W Ic =10AFigure 25.Typical switching times as aFigure 26.Typical switching times as afunction of collector currentfunction of gate resistor Brake IGBTBrake IGBTt = f (Ic)t = f (R G)inductive load, Tj = 125 °Cinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80W Ic =10AFigure 27.IGBT transient thermal impedanceFigure 28.FRED transient thermal impedanceas a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH=3,05K/WFigure 29.Power dissipation as aFigure 30.Collector current as afunction of heatsink temperature function of heatsink temperature Brake IGBTBrake IGBTP tot = f (Th)I c = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CV GE =15VFigure 32.Forward current as afunction of heatsink temperature Brake FREDI F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CV23990-P540-A-PMfinal datasheetInput rectifier bridgeFigure 33.Typical diode forward current asFigure 34.Diode transient thermal impedancea function of forward voltageas a function of pulse widthRectifier diodeI F =f(V F )Z th JH = f(tp)parameter: tp = 250 ms Parameter: D = tp / T RthJH=1,95K/WFigure 35.Power dissipation as aFigure 36.Forward current as afunction of heatsink temperature function of heatsink temperature Rectifier diodeRectifier diodeP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CV23990-P540-A-PMfinal datasheetThermistorFigure 37.Typical NTC characteristicas afunction of temperatureR T= f (T)General conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=40ohms Rgoff=20ohms Figure 1.Typical avarage static loss Figure 2.Typical avarage static loss as a function of output current as a function of output currentModulation index * cosfi Modulation index * cosfiparameter Mi*cosfi from-1,00to1,00parameter Mi*cosfi from-1,00to1,00in0,20steps in0,20stepsFigure 3.Typical avarage switching loss Figure 4.Typical avarage switching loss as a function of output current as a function of output currentFRED Ploss=f(Iout)DC link=600V DC link=600VSwitching freq.fsw from2kHz to16kHz Switching freq.fsw from2kHz to16kHz parameter in* 2steps parameter in* 2stepsGeneral conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=40ohms Rgoff=20ohms Figure 5.Typical available 50Hz output current Figure 6.Typical available 50Hz output current as a function of Mi*cosfi as a function of switching frequencyPhase Iout=f(Mi*cosfi)Phase Iout=f(fsw)DC link=600V DC link=600Vfsw=4kHz Mi*cosfi=0,8Heatsink temp.Th from60°C to100°C Heatsink temp.Th from60°C to100°C parameter in5°C steps parameter in5°C stepsFigure 7.Typical available 50Hz output current Figure 8.Typical available 0Hz output current as a function of Mi*cosfi and fsw as a function of switching frequencyPhase Iout=f(fsw,Mi*cosfi)Phase Ioutpeak=f(fsw)DC link=600V DC link=600VTh=80°C Heatsink temp.Th from60°C to100°Cparameter in5°C stepsGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=40ohmsRgoff=20ohmsFigure 9.Typical available electric Figure 10.Typical efficiencypeak output power as aas a function of output powerThfunction of heatsink temperatureInverterPout=f(Th)Inverterefficiency=f(Pout)Conditions:Tj=125C Conditions:Tj=125C DC link=600VDC link=600VModulation index Mi=1Modulation index Mi=1cosfi=0,80cosfi=0,80Switching freq.fsw from 2kHz to 16kHzSwitching freq.fsw from 2kHz to 16kHzparameter in* 2stepsparameter in* 2stepsmConditions:Tj=125C DC link=600V Modulation index Mi=1cosfi=0,8Switching freq.fsw from 1kHz to 16kHzparameter in* 2steps Heatsink temperature=80°C Motor efficiency=0,85。

V23990-P540-A中文资料

Maximum Ratings / Höchstzulässige WerteParameter Condition Symbol Datasheet values Unitmax.Input Rectifier BridgeGleichrichterRepetitive peak reverse voltage V RRM1600V Periodische Rückw. SpitzensperrspannungForward current per diode DC current Th =80°C;IFAV30ADauergrenzstrom Tc=80°C40-limited by wiresSurge forward current t p=10ms T j=25°C I FSM200A Stoßstrom GrenzwertI2t-value tp=10ms T j=25°C I2t200A2s GrenzlastintegralPower dissipation per Diode T j=150°C T h=80°C P tot37W Verlustleistung pro Diode T c=80°C54Transistor InverterTransistor WechselrichterCollector-emitter break down voltage V CE1200V Kollektor-Emitter-SperrspannungDC collector current T j=150°C T h=80°C,I C16A Kollektor-Dauergleichstrom T c=80°C20-limited by wires Repetitive peak collector current t p=1ms T h=80°C I cpuls32A Periodischer KollektorspitzenstromPower dissipation per IGBT T j=150°C T h=80°C P tot39W Verlustleistung pro IGBT T c=80°C59Gate-emitter peak voltage V GE±20V Gate-Emitter-SpitzenspannungSC withstand time Tj≤150°C V GE=15V t SC10us Kurzschlußverhalten V CE=V CEBRDiode InverterDiode WechselrichterDC forward current T j=150°C T h=80°C,I F16A Dauergleichstrom T c=80°C20-limited by wires Repetitive peak forward current t p=1ms T h=80°C I FRM31A Periodischer SpitzenstromPower dissipation per Diode T j=150°C T h=80°C P tot27W Verlustleistung pro Diode T c=80°C40Maximum Ratings / Höchstzulässige WerteParameter Condition Symbol Datasheet values Unitmax.Transistor BRCTransistor WechselrichterCollector-emitter break down voltage V CE1200V Kollektor-Emitter-SperrspannungDC collector current T j=150°C T h=80°C I C11A Kollektor-Dauergleichstrom T c=80°C14Repetitive peak collector current t p=1ms T h=80°C I cpuls22A Periodischer KollektorspitzenstromPower dissipation per IGBT T j=150°C T h=80°C P tot27W Verlustleistung pro IGBT T c=80°C41Gate-emitter peak voltage V GE±20V Gate-Emitter-SpitzenspannungSC withstand time Tj≤150°C VGE=15V t SC10us Kurzschlußverhalten VCE=600/1200 VDiode BRCDiode BRCDC forward current T j=150°C T h=80°C I F12A Dauergleichstrom T c=80°C16Repetitive peak forward current t p=1ms T h=80°C I FRM24A Periodischer SpitzenstromPower dissipation per Diode T j=150°C T h=80°C P tot23W Verlustleistung pro Diode T c=80°C35Thermal propertiesThermische Eigenschaftenmax. Chip temperature T150°Cjmaxmax. ChiptemperaturStorage temperature T-40…+125°CstgLagertemperatur-40…+125°C Operation temperature TopBetriebstemperaturInsulation propertiesModulisolation4000Vdc Insulation voltage t=1min VisIsolationsspannungCreepage distance min 12,7mm KriechstreckeClearance min 12,7mm LuftstreckeT(C°)Other conditions VGE(V)VCE(V)IC(A) IF(A)(Rgon-Rgoff)VGS(V)VDS(V)Id(A)Min Typ MaxInput Rectifier BridgeGleichrichterForward voltage V F Tj=25°C301,221,45V Durchlaßpannung Tj=125°C1,21Threshold voltage (for power loss calc. only)V to Tj=25°C300,91V Schleusenspannung Tj=125°C0,81Slope resistance (for power loss calc. only)r t Tj=25°C0,01Ohm Ersatzwiderstand Tj=125°C300,013Reverse current I r Tj=25°C15000,01mA Sperrstrom Tj=150°C4Thermal resistance chip to heatsink per chip RthJH Thermal greasethickness≤50um 1,95K/WWärmewiderstand Chip-Kühlkörper pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,29Transistor Inverter, inductive loadTransistor WechselrichterGate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,000655,86,5V Gate-Schwellenspannung Tj=125°CCollector-emitter saturation voltage V CE(sat)Tj=25°C15151,892,35V Kollektor-Emitter Sättigungsspannung Tj=125°C2,19Collector-emitter cut-off I CES Tj=25°C012000,1mA Kollektor-Emitter Reststrom Tj=125°C2Gate-emitter leakage current I GES Tj=25°C200200nA Gate-Emitter Reststrom Tj=125°CIntegrated Gate resistor R gint -Ohm Integrirter Gate WiderstandTurn-on delay time t d(on)Tj=25°C Rgon=40Ohm1560015ns Einschaltverzögerungszeit Tj=125°C Rgoff=20Ohm32Rise time t r Tj=25°C Rgon=40Ohm1560015ns Anstiegszeit Tj=125°C Rgoff=20Ohm20Turn-off delay time t d(off)Tj=25°C Rgon=40Ohm1560015ns Abschaltverzögerungszeit Tj=125°C Rgoff=20Ohm451Fall time t f Tj=25°C Rgon=40Ohm1560015ns Fallzeit Tj=125°C Rgoff=20Ohm276Turn-on energy loss per pulse E on Tj=25°C Rgon=40Ohm1560015mWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff=20Ohm1,61Turn-off energy loss per pulse E off Tj=25°C Rgon=40Ohm1560015mWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff=20Ohm2,19Input capacitance C ies Tj=25°C f=1MHz0251,1nF Eingangskapazität Tj=125°COutput capacitance C oss Tj=25°C f=1MHz0250,058nF Ausgangskapazität Tj=125°CReverse transfer capacitance C rss Tj=25°C f=1MHz0250,048nF Rückwirkungskapazität Tj=125°CGate charge Q Gate Tj=25°C159601585nC Gate Ladung Tj=125°CThermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 1,81K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,19Diode InverterDiode WechselrichterDiode forward voltage V F Tj=25°C152,323V Durchlaßspannung Tj=125°C1,78Peak reverse recovery current I RRM Tj=25°C Rgon=40Ohm1560015A Rückstromspitze Tj=125°C31Reverse recovery time t rr Tj=25°C Rgon=40Ohm1560015ns Sperreverzögerungszeit Tj=125°C355Reverse recovered charge Q rr Tj=25°C Rgon=40Ohm1560015uC Sperrverzögerungsladung Tj=125°C3,5Reverse recovered energy Erec Rgon=40Ohm1560015mWs Sperrverzögerungsenergie1,32Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,64K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,74T(C°)Other conditions VGE(V)VCE(V)IC(A) IF(A)(Rgon-Rgoff)VGS(V)VDS(V)Id(A)Min Typ Max Transistor BRCTransistor BRCGate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,000355,86,5V Gate-Schwellenspannung Tj=125°CCollector-emitter saturation voltage V CE(sat)Tj=25°C15101,872,7V Kollektor-Emitter Sättigungsspannung Tj=125°C2,19Collector-emitter cut-off I CES Tj=25°C012000,05mA Kollektor-Emitter Reststrom Tj=125°C2Gate-emitter leakage current I GES Tj=25°C200200nA Gate-Emitter Reststrom Tj=125°CTurn-on delay time t d(on)Tj=25°C Rgon=80Ohm1560010ns Einschaltverzögerungszeit Tj=125°C Rgoff=40Ohm34Rise time t r Tj=25°C Rgon=80Ohm1560010ns Anstiegszeit Tj=125°C Rgoff=40Ohm20Turn-off delay time t d(off)Tj=25°C Rgon=80Ohm1560010ns Abschaltverzögerungszeit Tj=125°C Rgoff=40Ohm442Fall time t f Tj=25°C Rgon=80Ohm1560010ns Fallzeit Tj=125°C Rgoff=40Ohm284Turn-on energy loss per pulse EonTj=25°C Rgon=80Ohm1560010uWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff=40Ohm0,92Turn-off energy loss per pulse EoffTj=25°C Rgon=80Ohm1560010uWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff=40Ohm1,47Input capacitance CissTj=25°C f=1MHz0250,6nF Eingangskapazität Tj=125°COutput capacitance C oss Tj=25°C f=1MHz0250,037nF Ausgangskapazität Tj=125°CReverse transfer capacitance Cies Tj=25°C f=1MHz0250,029nF Rückwirkungskapazität Tj=125°CGate charge Qgate Tj=25°C159601053nC Gate Ladung Tj=125°CThermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,56K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,69Diode BRCDiode BRCDiode forward voltage VFTj=25°C101,82,5V Durchlaßspannung Tj=125°C1,79Reverse current I r Tj=25°C1200250uA Sperrstrom Tj=150°C700Reverse recovery time trrTj=25°C Rgon=80Ohm1560010ns Sperreverzögerungszeit Tj=125°C423Reverse recovered charge QrrTj=25°C Rgon=80Ohm1560010uC Sperrverzögerungsladung Tj=125°C2,1Reverse recovery energy E rec Tj=25°C Rgon=80Ohm1560010uWs Sperrverzögerungsenergie Tj=125°C0,88Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 3,05K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK2,01NTC-ThermistorNTC-WiderstandRated resistance R25Tj=25°C Tol. ±5%20,92223,1kOhm NennwiderstandDeviation of R100D R/R Tc=100°C R100=1503Ohm2,9%/K Abweichung von R100Power dissipation given Epcos-Typ P Tj=25°C210mW Verlustleistung Epcos-Typ angebenB-value B(25/100)Tj=25°C Tol. ±3%3980K B-WertOutput inverterFigure 1.Typical output characteristicsFigure 2.Typical output characteristicsOutput inverter IGBTOutput inverter IGBTIc= f(V CE )parameter: tp = 250 µs Tj = 25 °CV GE parameter:from:7V to 17VV GE parameter:from:7V to 17Vin 1V steps in 1V stepsFigure 3.Typical transfer characteristicsFigure 4.Typical diode forward current asOutput inverter IGBTa function of forward voltageIc= f(V GE )Output inverter FREDI F =f(V F )parameter: tp = 250 µs V CE = 13VOutput inverterFigure 5.Typical switching energy lossesFigure 6.Typical switching energy losses as a function of collector current as a function of gate resistor Output inverter IGBTOutput inverter IGBTinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =40ΩIc =15AFigure 7.Typical switching times as aFigure 8.Typical switching times as a function of collector currentfunction of gate resistor Output inverter IGBTOutput inverter IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °Cinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =40ΩIc =15AOutput inverterFigure 9.Typical reverse recovery time as aFigure 10.Typical reverse recovery current as afunction of IGBT turn on gate resistor function of IGBT turn on gate resistor Output inverter FRED diodeOutput inverter FRED diodet rr = f (Rgon)I RRM = f (Rgon)Tj =125°C Tj =125°C V R =600V V R =600V I F =15A I F =15AFigure 11.Typical reverse recovery charge as aFigure 12.Typical rate of fall of forwardfunction of IGBT turn on gate resistor and reverse recovery current as aOutput inverter FRED diodefunction of IGBT turn on gate resistor Q rr = f (Rgon)Output inverter FRED diode dI0/dt,dIrec/dt = f (Rgon)Tj =125°C Tj =125°C V R =600V V R =600V I F =15A I F =15AOutput inverterFigure 13.IGBT transient thermal impedance Figure 14.FRED transient thermal impedance as a function of pulse width as a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)R (C/W)Tau (s)R (C/W)Tau (s)0,035,5E+010,045,2E+010,092,7E+000,161,8E+000,324,6E-010,742,4E-010,821,4E-011,176,3E-020,342,8E-020,415,8E-030,125,5E-030,147,8E-040,106,2E-040,342,8E-040,000,0E+00Output inverterFigure 15.Power dissipation as aFigure 16.Collector current as afunction of heatsink temperature function of heatsink temperature Output inverter IGBTOutput inverter IGBTP tot = f (Th)I c = f (Th)V GE =15VFigure 17.Power dissipation as aFigure 18.Forward current as afunction of heatsink temperaturefunction of heatsink temperature Output inverter FREDOutput inverter FREDP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CBrakeFigure 19.Typical output characteristicsFigure 20.Typical output characteristicsBrake IGBTBrake IGBTIc= f(V CE )Ic= f(V CE )parameter: tp = 250 µs Tj = 25 °Cparameter: tp = 250 µsTj = 125 °CV GE parameter:from:7V to17VV GE parameter:from:7V to17Vin 1V stepsin 1V stepsFigure 21.Typical transfer characteristicsFigure 22.Typical diode forward current asBrake IGBTa function of forward voltageIc= f(V GE )Brake FREDI F =f(V F )parameter: tp = 250 µs V CE = 10 V parameter: tp = 250 µsBrakeFigure 23.Typical switching energy lossesFigure 24.Typical switching energy lossesas a function of collector current as a function of gate resistor Brake IGBTBrake IGBTE = f (Ic)E = f (R G )inductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80ΩIc =10AFigure 25.Typical switching times as aFigure 26.Typical switching times as afunction of collector currentfunction of gate resistor Brake IGBTBrake IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °Cinductive load, Tj = 125 °CVCE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80ΩIc =10ABrakeFigure 27.IGBT transient thermal impedanceFigure 28.FRED transient thermal impedanceas a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH 3,05K/WFigure 29.Power dissipation as aFigure 30.Collector current as afunction of heatsink temperature function of heatsink temperature Brake IGBTBrake IGBTP tot = f (Th)I c = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CV GE =15VBrakeFigure 32.Forward current as afunction of heatsink temperatureBrake FREDI F = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CInput rectifier bridgeFigure 33.Typical diode forward current asFigure 34.Diode transient thermal impedancea function of forward voltageas a function of pulse widthRectifier diodeI F =f(V F )Z th JH = f(tp)Figure 35.Power dissipation as aFigure 36.Forward current as afunction of heatsink temperature function of heatsink temperature Rectifier diodeRectifier diodeP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CThermistorFigure 37.Typical NTC characteristicas a function of temperatureR T= f (T)Output inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=40ohmsRgoff=20ohmsFigure 1.Typical avarage static loss Figure 2.Typical avarage static lossas a function of output currentas a function of output currentModulation index * cosfi Modulation index * cosfi parameter Mi*cosfi from -1,00to1,00parameter Mi*cosfi from -1,00to1,00in 0,20stepsin 0,20stepsFigure 3.Typical avarage switching loss Figure 4.Typical avarage switching lossas a function of output currentas a function of output currentFREDPloss=f(Iout)Conditions:Tj=125CDC link=600VDC link=600VSwitching freq.fsw from2kHz to 16kHzSwitching freq.fsw from2kHz to 16kHzparameter in* 2stepsparameter in* 2stepsOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=40ohmsRgoff=20ohmsFigure 5.Typical available 50Hz output current Figure 6.Typical available 50Hz output currentas a function of Mi*cosfias a function of switching frequencyPhaseIout=f(Mi*cosfi)PhaseIout=f(fsw)Conditions:Tj=125CDC link=600V DC link=600V fsw=4kHz Mi*cosfi=0,8Heatsink temp.Th from60°C to 100°C Heatsink temp.Th from60°C to 100°C parameterin5°C stepsparameterin5°C stepsFigure 7.Typical available 50Hz output currentFigure 8.Typical available 0Hz output currentas a function of Mi*cosfi and fswas a function of switching frequencyPhaseIout=f(fsw,Mi*cosfi)PhaseIoutpeak=f(fsw)DC link=600V DC link=600VTh=80°CHeatsink temp.Th from60°C to 100°C parameter in5°C stepsOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=40ohmsRgoff=20ohmsFigure 9.Typical available electric Figure 10.Typical efficiencypeak output power as aas a function of output powerfunction of heatsink temperatureInverterPout=f(Th)Inverterefficiency=f(Pout)Conditions:Tj=125CConditions:Tj=125CDC link=600VDC link=600VModulation index Mi=1Modulation index Mi=1cosfi=0,80cosfi=0,80Switching freq.fsw from 2kHz to 16kHzSwitching freq.fsw from 2kHz to 16kHzparameter in * 2stepsparameter in * 2stepsConditions:Tj=125CDC link=600VModulation index Mi=1cosfi=0,8Switching freq.fsw from 1kHz to 16kHzparameter in * 2steps Heatsink temperature=80°CMotor efficiency=0,85。

V23990-P545-A中文资料

Maximum values Datasheet values Parameter Condition Symbol max.UnitGleichrichterRepetitive peak reverse voltage V RRM1600V Periodische Rückw. SpitzensperrspannungForward current per diode DC current Th =80°C;IFAV30ADauergrenzstrom Tc=80°C40-limited by wiresSurge forward current t p=10ms T j=25°C I FSM200A Stoßstrom GrenzwertI2t-value tp=10ms T j=25°C I2t200A2s GrenzlastintegralPower dissipation per Diode T j=150°C T h=80°C P tot36W Verlustleistung pro Diode T c=80°C54Transistor WechselrichterCollector-emitter break down voltage V CE600V Kollektor-Emitter-SperrspannungDC collector current T j=150°C T h=80°C,I C17A Kollektor-Dauergleichstrom T c=80°C20-limited by wires Repetitive peak collector current t p=1ms T h=80°C I cpuls32A Periodischer KollektorspitzenstromPower dissipation per IGBT T j=150°C T h=80°C P tot41W Verlustleistung pro IGBT T c=80°C62Gate-emitter peak voltage V GE±20V Gate-Emitter-SpitzenspannungSC withstand time Tj≤150°C V GE=15V t SC10us Kurzschlußverhalten V CE=V CEBRDiode InverterDiode WechselrichterDC forward current T j=150°C T h=80°C,I F19A Dauergleichstrom T c=80°C20-limited by wires Repetitive peak forward current t p=1ms T h=80°C I FRM38A Periodischer SpitzenstromPower dissipation per Diode T j=150°C T h=80°C P tot26W Verlustleistung pro Diode T c=80°C40Transistor BRCTransistor WechselrichterCollector-emitter break down voltage V CE600V Kollektor-Emitter-SperrspannungDC collector current T j=150°C T h=80°C I C11A Kollektor-Dauergleichstrom T j=150°C15Repetitive peak collector current t p=1ms T h=80°C I cpuls23A Periodischer KollektorspitzenstromPower dissipation per IGBT T j=150°C T h=80°C P tot27W Verlustleistung pro IGBT41Gate-emitter peak voltage V GE±20V Gate-Emitter-SpitzenspannungSC withstand time Tj≤150°C VGE=15V t SC10us Kurzschlußverhalten VCE=600/1200 VMaximum values Datasheet values Parameter Condition Symbol max.UnitDiode BRCDC forward current T j=150°C T h=80°C I F13A Dauergleichstrom T j=150°C17Repetitive peak forward current t p=1ms T h=80°C I FRM26A Periodischer SpitzenstromPower dissipation per Diode T j=150°C T h=80°C P tot23W Verlustleistung pro Diode35Thermal propertiesThermische Eigenschaften150°C max. Chip temperature Tjmaxmax. Chiptemperatur-40…+125°C Storage temperature TstgLagertemperatur-40…+125°C Operation temperature TopBetriebstemperaturInsulation propertiesModulisolationInsulation voltage t=1min V4000VdcisIsolationsspannungCreepage distance min 12,7mm KriechstreckeClearance min 12,7mm LuftstreckeDescription Symbol Conditions Datasheet values UnitT(C°)Other conditions VGE(V)VR(V)VCE(V)IC(A)IF(A)(Rgon-Rgoff)VGS(V)VDS(V)Id(A)Min Typ MaxInput Rectifier BridgeGleichrichterForward voltage V F Tj=25°C301,221,45V Durchlaßpannung Tj=125°C1,21Threshold voltage (for power loss calc. only)V to Tj=25°C300,92V Schleusenspannung Tj=125°C0,81Slope resistance (for power loss calc. only)r t Tj=25°C0,01Ohm Ersatzwiderstand Tj=125°C300,013Reverse current I r Tj=25°C12000,02mA Sperrstrom Tj=150°C4Thermal resistance chip to heatsink per chip RthJH Thermal greasethickness≤50um 1,93K/WWärmewiderstand Chip-Kühlkörper pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,2738Transistor Inverter, inductive loadTransistor WechselrichterGate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,0005345V Gate-Schwellenspannung Tj=125°CCollector-emitter saturation voltage V CE(sat)Tj=25°C15202,233V Kollektor-Emitter Sättigungsspannung Tj=125°C2,65Collector-emitter cut-off I CES Tj=25°C06000,1mA Kollektor-Emitter Reststrom Tj=125°C2Gate-emitter leakage current I GES Tj=25°C250200nA Gate-Emitter Reststrom Tj=125°CIntegrated Gate resistor R gint -Ohm Integrirter Gate WiderstandTurn-on delay time t d(on)Tj=25°C Rgon=26Ohm1530020ns Einschaltverzögerungszeit Tj=125°C Rgoff=13Ohm17Rise time t r Tj=25°C Rgon=26Ohm1530020ns Anstiegszeit Tj=125°C Rgoff=13Ohm17Turn-off delay time t d(off)Tj=25°C Rgon=26Ohm1530020ns Abschaltverzögerungszeit Tj=125°C Rgoff=13Ohm201Fall time t f Tj=25°C Rgon=26Ohm1530020ns Fallzeit Tj=125°C Rgoff=13Ohm28Turn-on energy loss per pulse E on Tj=25°C Rgon=26Ohm1530020mWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff=13Ohm0,43Turn-off energy loss per pulse E off Tj=25°C Rgon=26Ohm1530020mWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff=13Ohm0,391Input capacitance C ies Tj=25°C f=1MHz0251,11,32nF Eingangskapazität Tj=125°COutput capacitance C oss Tj=25°C f=1MHz0250,1070,128nF Ausgangskapazität Tj=125°CReverse transfer capacitance C rss Tj=25°C f=1MHz0250,0630,076nF Rückwirkungskapazität Tj=125°CGate charge Q Gate Tj=25°C1548020100130nC Gate Ladung Tj=125°CThermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 1,7K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,122Diode InverterDiode WechselrichterDiode forward voltage V F Tj=25°C201,772,6V Durchlaßspannung Tj=125°C1,48Peak reverse recovery current I RRM Tj=25°C Rgon=26Ohm1530020A Rückstromspitze Tj=125°C30Reverse recovery time t rr Tj=25°C Rgon=26Ohm1530020ns Sperreverzögerungszeit Tj=125°C60Reverse recovered charge Q rr Tj=25°C Rgon=26Ohm1530020uC Sperrverzögerungsladung Tj=125°C1,04Reverse recovered energy Erec Tj=25°C Rgon=26Ohm1530020mWs Sperrverzögerungsenergie Tj=125°C0,141Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,66K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,7556Description Symbol Conditions Datasheet values UnitT(C°)Other conditions VGE(V)VR(V)VCE(V)IC(A)IF(A)(Rgon-Rgoff)VGS(V)VDS(V)Id(A)Min Typ Max Transistor BRCTransistor BRCGate emitter threshold voltage V GE(th)Tj=25°C VCE=VGE0,0002345V Gate-Schwellenspannung Tj=125°CCollector-emitter saturation voltage V CE(sat)Tj=25°C15101,92,7V Kollektor-Emitter Sättigungsspannung Tj=125°C2,18Collector-emitter cut-off I CES Tj=25°C06000,055mA Kollektor-Emitter Reststrom Tj=125°C0,7Gate-emitter leakage current I GES Tj=25°C250200nA Gate-Emitter Reststrom Tj=125°CTurn-on delay time t d(on)Tj=25°C Rgon=56Ohm1530010ns Einschaltverzögerungszeit Tj=125°C Rgoff=28Ohm18Rise time t r Tj=25°C Rgon=56Ohm1530010ns Anstiegszeit Tj=125°C Rgoff=28Ohm18Turn-off delay time t d(off)Tj=25°C Rgon=56Ohm1530010ns Abschaltverzögerungszeit Tj=125°C Rgoff=28Ohm243Fall time t f Tj=25°C Rgon=56Ohm1530010ns Fallzeit Tj=125°C Rgoff=28Ohm34Turn-on energy loss per pulse EonTj=25°C Rgon=56Ohm1530010uWs Einschaltverlustenergie pro Puls Tj=125°C Rgoff=28Ohm0,194Turn-off energy loss per pulse EoffTj=25°C Rgon=56Ohm1530010uWs Abschaltverlustenergie pro Puls Tj=125°C Rgoff=28Ohm0,228SC withstand time tSCus KurzschlußverhaltenInput capacitance CissTj=25°C f=1MHz0250,350,42nF Eingangskapazität Tj=125°COutput capacitance C oss Tj=25°C f=1MHz0250,0380,046nF Ausgangskapazität Tj=125°CReverse transfer capacitance Cies Tj=25°C f=1MHz0250,0230,028nF Rückwirkungskapazität Tj=125°CGate charge Qgate Tj=25°C1548063242nC Gate Ladung Tj=125°CThermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,41K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip WarmeleitpasteDicke≤50umλ = 0,61 W/mK1,5906Diode BRCDiode BRCDiode forward voltage VFTj=25°C101,672,15V Durchlaßspannung Tj=125°C1,58Reverse current I r Tj=25°C Rgon=56Ohm1530010250uA Sperrstrom Tj=125°CReverse recovery time trrTj=25°C Rgon=56Ohm1530010ns Sperreverzögerungszeit Tj=125°C60Reverse recovered charge QrrTj=25°C Rgon=56Ohm1530010uC Sperrverzögerungsladung Tj=125°C1,04Reverse recovery energy E rec Tj=25°C Rgon=56Ohm1530010uWs Sperrverzögerungsenergie Tj=125°C0,14Thermal resistance chip to heatsink per chipWärmewiderstand Chip-Kühlkörper pro Chip RthJH Thermal greasethickness≤50um 2,66K/WThermal resistance chip to case per chip Wärmewiderstand Chip-Gehause pro Chip Warmeleitpaste Dicke≤50um λ = 0,61 W/mKNTC-ThermistorNTC-WiderstandRated resistance R25Tj=25°C Tol. ±5%20,92223,1kOhm NennwiderstandDeviation of R100D R/R Tc=100°C R100=1503Ohm2,9%/K Abweichung von R100Power dissipation given Epcos-Typ P Tj=25°C210mW Verlustleistung Epcos-Typ angebenB-value B(25/100)Tj=25°C Tol. ±3%3980K B-WertOutput inverterFigure 1.Typical output characteristics Figure 2.Typical output characteristics Output inverter IGBT Output inverter IGBTV GE parameter:from:6V to16V V GE parameter:from:6V to16V in1V steps in1V steps Figure 3.Typical transfer characteristics Figure 4.Typical diode forward current as Output inverter IGBT a function of forward voltageOutput inverter FRED I F=f(V F)CE18V parameter: tp = 250 µsOutput inverterFigure 5.Typical switching energy losses Figure 6.Typical switching energy losses as a function of collector current as a function of gate resistor Output inverter IGBTOutput inverter IGBTV CE =300V V CE =300V V GE =15VV GE =15V R G on = 2*R Goff =26ΩIc =20AFigure 7.Typical switching times as aFigure 8.Typical switching times as a function of collector current function of gate resistor Output inverter IGBTOutput inverter IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °CV CE =300V V CE =300V V GE =15VV GE =15V R G on = 2*R Goff =26ΩIc =20AOutput inverterFigure 9.Typical reverse recovery time as a Figure 10.Typical reverse recovery current as a function of IGBT turn on gate resistor function of IGBT turn on gate resistor Output inverter FRED diodeOutput inverter FRED dioderrRRM Tj =125°C Tj =125°C V R =300V V R =300V I F =20A I F =20AFigure 11.Typical reverse recovery charge as aFigure 12.Typical rate of fall of forward function of IGBT turn on gate resistor and reverse recovery current as aOutput inverter FRED diodefunction of IGBT turn on gate resistor Q rr = f (Rgon)Output inverter FRED diode dI0/dt,dIrec/dt = f (Rgon)Tj =125°C Tj =125°CV R =300V V R =300V I F =20A I F =20AFigure 13.IGBT transient thermal impedance Figure 14.FRED transient thermal impedance as a function of pulse width as a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)IGBT thermal model values FRED thermal model valuesR (C/W)Tau (s)R (C/W)Tau (s)0,067,1E+000,03-3,3E+020,227,3E-010,181,7E+000,861,4E-010,801,8E-010,403,3E-020,955,2E-020,113,5E-030,366,5E-030,251,3E-03Figure 15.Power dissipation as a Figure 16.Collector current as afunction of heatsink temperatureOutput inverter IGBTI c = f (Th)V GE=15VFigure 17.Power dissipation as a Figure 18.Forward current as a function of heatsink temperature function of heatsink temperatureOutput inverter FRED Output inverter FREDP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CBrakeFigure 19.Typical output characteristicsFigure 20.Typical output characteristicsBrake IGBTparameter: tp = 250 µsTj = 125 °CV GE parameter:from:6V to16VV GE parameter:from:6V to16Vin 1V stepsin 1V stepsFigure 21.Typical transfer characteristicsFigure 22.Typical diode forward current asBrake IGBTa function of forward voltageIc= f(V GE )Brake FREDI F =f(V F )CE parameter: tp = 250 µsBrakeFigure 23.Typical switching energy lossesFigure 24.Typical switching energy lossesas a function of collector current as a function of gate resistor Brake IGBTBrake IGBTE = f (Ic)E = f (R G )inductive load, Tj = 125 °CV CE =300V V CE =300V V GE =15VV GE =15V R G on = 2*R Goff =56ΩIc =10AFigure 25.Typical switching times as aFigure 26.Typical switching times as a function of collector currentfunction of gate resistor Brake IGBTBrake IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °CV CE =300V V CE =300V V GE =15VV GE =15V R G on = 2*R Goff =56ΩIc =10AFigure 27.IGBT transient thermal impedanceFigure 28.FRED transient thermal impedance as a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH=3,79K/WFigure 29.Power dissipation as aFigure 30.Collector current as afunction of heatsink temperature function of heatsink temperature Brake IGBTBrake IGBTP tot = f (Th)I c = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CV GE =15VFigure 32.Forward current as afunction of heatsink temperatureBrake FREDI F = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CInput rectifier bridgeFigure 33.Typical diode forward current asFigure 34.Diode transient thermal impedance a function of forward voltageas a function of pulse widthRectifier diodeI F =f(V F )Z th JH = f(tp)parameter: tp = 250 µsFigure 35.Power dissipation as aFigure 36.Forward current as afunction of heatsink temperaturefunction of heatsink temperature Rectifier diodeRectifier diodeP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CThermistorFigure 37.Typical NTC characteristicas a function of temperatureR T= f (T)Output inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=26ohms Rgoff=13ohms Figure 1.Typical avarage static loss Figure 2.Typical avarage static loss as a function of output current as a function of output currentFRED Ploss=f(Iout)Modulation index * cosfi Modulation index * cosfiparameter Mi*cosfi from-1,00to1,00parameter Mi*cosfi from-1,00to1,00in0,20steps in0,20stepsFigure 3.Typical avarage switching loss Figure 4.Typical avarage switching loss as a function of output current as a function of output currentIGBT Ploss=f(Iout)FRED Ploss=f(Iout)DC link=320V DC link=320VSwitching freq.fsw from2kHz to16kHz Switching freq.fsw from2kHz to16kHz parameter in* 2steps parameterin* 2stepsOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=26ohms Rgoff=13ohms Figure 5.Typical available 50Hz output current Figure 6.Typical available 50Hz output current as a function of Mi*cosfi as a function of switching frequencyPhase Iout=f(Mi*cosfi)Phase Iout=f(fsw)DC link=320V DC link=320Vfsw=16kHz Mi*cosfi=0,8 Heatsink temp.Th from60°C to100°C Heatsink temp.Th from60°C to100°C parameter in5°C steps parameter in5°C stepsFigure 7.Typical available 50Hz output current Figure 8.Typical available 0Hz output current as a function of Mi*cosfi and fsw as a function of switching frequencyPhase Iout=f(fsw,Mi*cosfi)Phase Ioutpeak=f(fsw)DC link=320V DC link=320VTh=80°C Heatsink temp.Th from60°C to100°Cparameter in5°C stepsOutput inverter applicationGeneral conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=26ohms Rgoff=13ohms Figure 9.Typical available electric Figure 10.Typical efficiencypeak output power as a as a function of output powerfunction of heatsink temperatureInverter Pout=f(Th)Inverter efficiency=f(Pout)Conditions:Tj=125CDC link=320VModulation index Mi=1cosfi=0,80Switching freq.fsw from2kHz to16kHzparameter in* 2stepsConditions:Tj=125CDC link=320VModulation index Mi=1cosfi=0,8Switching freq.fsw from1kHz to16kHzparameter in* 2stepsHeatsink temperature=80°CMotor efficiency=0,85。

英飞拓产品型号

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V5512-A3014SEV5413室内宽动态彩⾊固定半球摄像机V5512-A3014SB V5413-A3024SB V5413-A3024SE2．3固定半球摄像机PALV5411-A2014ST V5411-A2014SU V5411-A2014SV V5411-A2014SW V5411-A2014SXV5411-A2014SY480线⼿动变焦⾃动光圈镜头V5411-A2014SZ V5411-A2014SB V5411-A2014SD V5411-A2014SE V5411-A2014SC V5411-A2014SF520线固定焦距镜头V5411-A3014ST V5411-A3014SU V5411-A3014SV V5411-A3014SW V5411-A3014SZ V5411-A3014SY V5411-A3014SX520线⼿动变焦⾃动光圈镜头V5411-A3014SB V5411-A3014SD V5411-A3014SE V5411-A3014SCV5512室内⽇夜型因定半球摄像机V5411-A3014SF V5512-A2014SB520线⼿动变焦⾃动光圈镜头V5512-A2014SE V5512-A3014SB V5512-A3014SB V5512-A3014SEV5413室内宽动态彩⾊固定半球摄像机V5413-A3024SBV1700A系列快球PAL室内吸顶装快球V1725A-C1C2C6 V1726A-C1C2C6 V1727A-C1C2C6 V1728A-C1C2C6 V1724A-C1C2C6 V1729A-C1C2C6 V1723A-C1C2C6室内⽀架装快球V1725A-C1C2B6 V1726A-C1C2B6 V1727A-C1C2B6 V1728A-C1C2B6 V1724A-C1C2B6 V1729A-C1C2B6 V1723A-C1C2B6室外吸顶装快球V1745A-C1C2C6 V1746A-C1C2C6 V1747A-C1C2C6 V1748A-C1C2C6 V1744A-C1C2C6 V1749A-C1C2C6 V1743A-C1C2C6室外⽀架装快球V1745A-C1C2B6 V1746A-C1C2B6 V1747A-C1C2B6 V1748A-C1C2B6 V1744A-C1C2B6 V1749A-C1C2B6 V1743A-C1C2B62．5 V1750A 系列充氮快球-PAL室内充氮吊装快球V1757A-C1C3B6 V1758A-C1C3B6 V1759A-C1C3B6 V1753A-C1C3B6 V1791室内内置单模光端机吸顶装快球V1725S-C1C2C6 V1726S-C1C2C6 V1727S-C1C2C6 V1728S-C1C2C6 V1729S-C1C2C6 V1723S-C1C2C6室内内置单模光端机⽀架装快球V1725S-C1C2B6V1726S-C1C2B6V1727S-C1C2B6 V1728S-C1C2B6 V1729S-C1C2B6 V1723S-C1C2B6室外内置单模光端机吸顶装快球V1745S-C1C2C6 V1746S-C1C2C6 V1747S-C1C2C6 V1748S-C1C2C6 V1743S-C1C2C6 V17243S-C1C2C6室外内置单模光端机⽀架装快球V1745S-C1C2B6 V1746S-C1C2B6 V1747S-C1C2B6 V1748S-C1C2B6 V1749S-C1C2B6 V1724S-C1C2B62．7V1900A系列快球PAL室内吸顶装快球V1901A-C1C2C6 V1902A-C1C2C6 V1903A-C1C2C6 V1904A-C1C2C6 V1906A-C1C2C6室内⽀架装快球V1901A-C1C2B6 V1902A-C1C2B6 V1903A-C1C2B6 V1904A-C1C2B6 V1906A-C1C2B6室外吸顶装快球V1911A-C1C2C6 V1912A-C1C2C6 V1913A-C1C2C6 V1914A-C1C2C6 V1916A-C1C2B6 V1917A-C1C2B6室外⽀架装快球V1911A-C1C2B6 V1912A-C1C2B6 V1913A-C1C2B6 V1914A-C1C2B6 V1916A-C1C2B6 V1917A-C1C2B62．8 ⼀体化云台摄像机V1492-18A15 V1492-23A15 V1492-26A15 V1492-35A15 V1492-36A15 V1492-18A16 V1492-23A16 V1492-26A16 V1492-35A16 V1492-36A16 V1492-18A17 V1492-23A17 V1492-26A17 V1492-35A17 V1492-36A17 V1492-18A18 V1492-23A18 V1492-26A18 V1492-35A18V1492-36A18⼀体化云台⽀架（适⽤于V1492、V1493）V1662-W1 V1662-S1 V1662-C1 V1662-DV1493中型⾼速云台V1493-D16V7A15 V1493-DP16V7A15 V1493-A15 V1493-D16V7A16 V1493-DP16V7A16 V1493-A16 V1493-D16V7A17 V1493-DP16V7A17 V1493-A17 V1493-D16V7A18 V1493-DP16V7A18 V1493-A18V1631隔爆云台摄像机V1631-23A19 V1631-25A19防爆护罩V1421-15SHB6-2V1421-15SHB8-2V1421-15A6-2V1421-15A8-2隔爆云台⽀架V1664-W V1664-C V1664-S V1665-W12．9恒速球形护罩/云台V1682 系列室内/室外恒速球形云台V1682-C2B-9HBPV1682-C2B-9HBP2．10 快球零部件V1761 V1761L V1762 V1763 V1764 V1764A V1764B V1765 V1765A V1766适⽤V1750A系列充氮快球V1761S V1762S V1763S球芯V1700N系列⽹络快球球芯(PAL)(坜另配视频缟码卡)V1825N-C16 V1826N-C16 V1827N-C16 V1828N-C16 V1829N-C16 V1825N-C15 V1826N-C15 V1827N-C15V1828N-C16 V1829N-C16V1700A系列快球球芯(PAL)V1825A-C16 V1826A-C16 V1827A-C16 V1828A-C16 V1829A-C16 V1825N-C15 V1826N-C15 V1827N-C15V1828N-C16 V1829N-C16V1750A系列充氮快球球芯(PAL)V1825AP-C16 V1826AP-C16 V1827AP-C16 V1828AP-C16 V1829AP-C16 V1825AP-C15 V1826AP-C15 V1827AP-C15 V1828AP-C15 V1829AP-C15V1700S系列光端机快球球芯（PAL）V1825AF-C16 V1826 AF-C16 V1827 AF-C16 V1828 AF-C16 V1829 AF-C16 V1825AF-C15 V1826 AF-C15 V1827 AF-C15 V1828 AF-C15 V1829 AF-C15V1900A系列快球球芯（PAL）V1901A-C16 V1902A-C16 V1903A-C16 V1904A-C16 V1905A-C16 球罩快球下罩（不带法兰）V1840-C2 V1840-S2 V1840-C3 V1840-S3室内吸顶装配罩下罩（带法兰）V1840-C2C V1840-S2C V1840-C3C V1840-S3C室内⽀架装配罩下罩（带法兰）V1840-C2B V1840-S2B V1840-C3B V1840-S3B室外⽀架装和吸顶装配罩下罩（带法兰和加热器）V1840-C2O V1840-S2O V1840-C3O V1840-S3O V1840P-C3OV1840P-S3O快球上罩（带法兰）V1850-IC V1850-IB V1850-OC V1850-OB V1850P-OB V1852-IC V1852-IB V1852-OC V1852-OB快球电源板V1860A-C6 V1860N-L6 V1860A-C5 V1860N-L5快球电源V3922-24A-26．键盘及辅助设备6．1 键盘V2100 V2109X V2111X V2110 V2115 V2116X7．3 V2020系列中型矩阵切换/控制器V2020AX-16X4 V2020AX-16X8 V2020AX-16X12 -16X16 V2020AX-16X20 V2020AX-16X24 V2020AX-16X28V2020AX-16X32 V2020AX-32X4 V2020AX-32X8 V2020AX-32X12 V2020AX-32X16 V2020AX-32X20 V2020AX-32X24 V2020AX-32X28 V2020AX-32X32 V2020AX-48X4 V2020AX-48X8V2020AX-48X12 V2020AX-48X16 V2020AX-48X20 V2020AX-48X24 V2020AX-48X28 V2020AX-48X32 V2020AX-64X4 V2020AX-64X8 V2020AX-64X12 V2020AX-64X16 V2020AX-64X20 V2020AX-64X24 V2020AX-64X28 V2020AX-64X32 V2020AX-80X4 V2020AX-80X8 V2020AX-80X12 V2020AX-80X16 V2020AX-80X20 V2020AX-80X24V2020AX-80X28 V2020AX-80X32 V2020AX-96X4 V2020AX-96X8 V2020AX-96X12 V2020AX-96X16 V2020AX-96X20 V2020AX-96X24 V2020AX-96X28 V2020AX-96X32V2020AX-112X4 V2020AX-112X8 V2020AX-112X12 V2020AX-112X16 V2020AX-112X20 V2020AX-112X24V2020AX-112X28 V2020AX-112X32 V2020AX-128X4 V2020AX-128X8 V2020AX-128X12 V2020AX-128X16V2020AX-128X20 V2020AX-128X24 V2020AX-128X28 V2020AX-128X32 V2020AX-144X4 V2020AX-144X8V2020AX-144X12 V2020AX-144X16 V2020AX-144X20 V2020AX-144X24 V2020AX-144X28 V2020AX-144X32V2020AX-160X4 V2020AX-160X8 V2020AX-160X12 V2020AX-160X16 V2020AX-160X20 V2020AX-160X24V2020AX-160X28 V2020AX-160X32 V2020AX-176X4 V2020AX-176X8 V2020AX-176X12 V2020AX-176X16V2020AX-176X20 V2020AX-176X24 V2020AX-176X28 V2020AX-176X32 V2020AX-192X4 V2020AX-192X8V2020AX-192X12 V2020AX-192X16 V2020AX-192X20 V2020AX-192X24 V2020AX-192X28 V2020AX-192X32 V2020AX-208X4 V2020AX-208X8 V2020AX-208X12 V2020AX-208X16 V2020AX-208X20 V2020AX-208X24V2020AX-208X28 V2020AX-208X32 V2020AX-224X4 V2020AX-224X8 V2020AX-224X12 V2020AX-224X16V2020AX-224X20 V2020AX-224X24 V2020AX-224X28 V2020AX-224X32 V2020AX-240X4 V2020AX-240X8 V2020AX-240X12 V2020AX-240X16 V2020AX-240X20 V2020AX-240X24 V2020AX-240X28 V2020AX-240X32V2040AX-16X4 V2040AX-16X8 V2040AX-16X12 V2040AX-16X16 V2040AX-16X20 V2040AX-16X24V2040AX-16X28 V2040AX-16X32 V2040AX-32X4 V2040AX-32X8 V2040AX-32X12 V2040AX-32X16V2040AX-32X20 V2040AX-32X24 V2040AX-32X28 V2040AX-32X32 V2040AX-48X4 V2040AX-48X8V2040AX-48X12 V2040AX-48X16 V2040AX-48X20 V2040AX-48X24 V2040AX-48X28 V2040AX-48X32V2040AX-64X4 V2040AX-64X8 V2040AX-64X12 V2040AX-64X16 V2040AX-64X20 V2040AX-64X24 V2040AX-64X28 V2040AX-64X32 V2040AX-80X4 V2040AX-80X8 V2040AX-80X12 V2040AX-80X16 V2040AX-80X20V2040AX-80X24 V2040AX-80X28 V2040AX-80X32V2040AX-96X4 V2040AX-96X8 V2040AX-96X12 V2040AX-96X16 V2040AX-96X20 V2040AX-96X24 V2040AX-96X28 V2040AX-96X32 V2040AX-112X4 V2040AX-112X8 V2040AX-112X12 V2040AX-112X16 V2040AX-112X20 V2040AX-112X24 V2040AX-112X28V2040AX-112X32 V2040AX-128X4 V2040AX-128X8 V2040AX-128X12 V2040AX-128X16V2040AX-128X20 V2040AX-128X24 V2040AX-128X28 V2040AX-128X32 V2040AX-144X4V2040AX-144X8 V2040AX-144X12 V2040AX-144X16 V2040AX-144X20 V2040AX-144X24V2040AX-144X28 V2040AX-144X32 V2040AX-160X4 V2040AX-160X8 V2040AX-160X12V2040AX-160X16 V2040AX-160X20 V2040AX-160X24 V2040AX-160X28 V2040AX-160X32 V2040AX-176X4V2040AX-176X8 V2040AX-176X12 V2040AX-176X16 V2040AX-176X20V2040AX-176X24 V2040AX-176X28 V2040AX-176X32 V2040AX-192X4 V2040AX-192X8V2040AX-192X12 V2040AX-192X16 V2040AX-192X20 V2040AX-192X24 V2040AX-192X28V2040AX-192X32V2040AX-208X4 V2040AX-208X8 V2040AX-208X12 V2040AX-208X16 V2040AX-208X20 V2040AX-208X24V2040AX-208X28 V2040AX-208X32 V2040AX-224X4 V2040AX-224X8 V2040AX-224X12 V2040AX-224X16V2040AX-224X20 V2040AX-224X24 V2040AX-224X28 V2040AX-224X32 V2040AX-240X4 V2040AX-240X8V2040AX-240X12 V2040AX-240X16 V2040AX-240X20 V2040AX-240X24 V2040AX-240X28 V2040AX-240X32V2040AX-256X4V2040AX-256X8 V2040AX-256X12 V2040AX-256X16 V2040AX-256X20 V2040AX-256X24V2040AX-256X28 V2040AX-256X32A2011X-16X5 A2011X-32X5 A2020X-16X4 A2020X-16X8 A2020X-16X12 A2020X-16X16 A2020X-16X20 A2020X-16X24 A2020X-16X28 A2020X-16X32 A2020X-32X4 A2020X-32X8 A2020X-32X12 A2020X-32X16 A2020X-32X20 A2020X-32X24 A2020X-32X28A2020X-32X32 A2020X-48X4 A2020X-48X8 A2020X-48X12 A2020X-48X16 A2020X-48X20A2020X-48X24 A2020X-48X28 A2020X-48X32 A2020X-64X4 A2020X-64X8 A2020X-64X12A2020X-64X16 A2020X-64X20 A2020X-64X24 A2020X-64X28 A2020X-64X32 A2020X-80X4A2020X-80X8 A2020X-80X12 A2020X-80X16 A2020X-80X20 A2020X-80X24 A2020X-80X28A2020X-80X32 A2020X-96X4 A2020X-96X8 A2020X-96X12 A2020X-96X16 A2020X-96X20 A2020X-96X24 A2020X-96X28 A2020X-96X32 A2020X-112X4A2020X-112X8 A2020X-112X12 A2020X-112X16 A2020X-112X20 A2020X-112X24A2020X-112X28 A2020X-112X32 A2020X-128X4 A2020X-128X8 A2020X-128X12 A2020X-128X16 A2020X-128X20 A2020X-128X24 A2020X-128X28 A2020X-128X32A2020X-144X4 A2020X-144X8 A2020X-144X12 A2020X-144X16 A2020X-144X20 A2020X-144X24 A2020X-144X28 A2020X-144X32 A2020X-160X4 A2020X-160X8 A2020X-160X12 A2020X-160X16 A2020X-160X20 A2020X-160X24 A2020X-160X28A2020X-160X32 A2020X-176X4 A2020X-176X8 A2020X-176X12 A2020X-176X16 A2020X-176X20A2020X-176X24 A2020X-176X28 A2020X-176X32 A2020X-192X4 A2020X-192X8 A2020X-192X12 A2020X-192X16 A2020X-192X20 A2020X-192X24 A2020X-192X28 A2020X-192X32 A2020X-208X4 A2020X-208X8。

UC5843A中文资料

UC1842A/3A/4A/5A UC2842A/3A/4A/5A UC3842A/3A/4A/5A•Optimized for Off-line and DC to DC Converters•Low Start Up Current (<0.5mA)•Trimmed Oscillator Discharge Current •Automatic Feed Forward Compensation •Pulse-by-Pulse Current Limiting•Enhanced Load Response Characteristics •Under-Voltage Lockout With Hysteresis •Double Pulse Suppression •High Current Totem Pole Output •Internally Trimmed Bandgap Reference •500kHz Operation •Low R O Error AmpCurrent Mode PWM ControllerThe UC1842A/3A/4A/5A family of control ICs is a pin for pin compati-ble improved version of the UC3842/3/4/5family.Providing the nec-essary features to control current mode switched mode power supplies,this family has the following improved features.Start up cur-rent is guaranteed to be less than 0.5mA.Oscillator discharge is trimmed to 8.3mA.During under voltage lockout,the output stage can sink at least 10mA at less than 1.2V for V CC over 5V .The difference between members of this family are shown in the table below.FEATURESDESCRIPTIONPart #UVLO On UVLO Off Maximum DutyCycleUC1842A 16.0V 10.0V <100%UC1843A 8.5V 7.9V <100%UC1844A 16.0V 10.0V <50%UC1845A8.5V7.9V<50%UC1842A/3A/4A/5A UC2842A/3A/4A/5AUC3842A/3A/4A/5ACONNECTION DIAGRAMSABSOLUTE MAXIMUM RATINGS (Note 1)Note 1.All voltages are with respect to Ground, Pin 5.Currents are positive into, negative out of the specified terminal.Consult Packaging Section of Databook for thermal limitations and con-siderations of packages.Pin numbers refer to DIL package only.Supply Voltage (Low Impedance Source). . . . . . . . . . . . . .30V Supply Voltage (I CC mA). . . . . . . . . . . . . . . . . . . .Self Limiting Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±1A Output Energy (Capacitive Load). . . . . . . . . . . . . . . . . . . . .5µJ Analog Inputs (Pins 2, 3). . . . . . . . . . . . . . . . . . .-0.3V to +6.3V Error Amp Output Sink Current . . . . . . . . . . . . . . . . . . . .10mA Power Dissipation at T A ≤25°C (DIL-8). . . . . . . . . . . . . . . .1W Storage Temperature Range. . . . . . . . . . . . . .-65°C to +150°C Lead Temperature (Soldering, 10 Seconds). . . . . . . . . .300°C N/C VREF VCC OUTPUT VCC GND 12345678161514131211N/C N/C N/CRT/CT N/C COMP VFB ISENSE PWRGND N/C109SOIC-WIDE16(TOP VIEW)DW PackagePARAMETERTEST CONDITIONSUC184xA\UC284xA UC384xAUNITSMIN.TYP.MAX.MIN.TYP.MAX.Reference Section Output Voltage T J = 25°C, I O = 1mA 4.955.00 5.05 4.905.00 5.10V Line Regulation 12≤V IN 25V 620620mV Load Regulation 1≤I O ≤20mA 625625mV Temp. Stability(Note 2, Note 7)0.20.40.20.4mV/°C Total Output Variation Line, Load, Temp. 4.95.14.825.18V Output Noise Voltage 10Hz ≤f ≤10kHz T J = 25°C (Note 2)5050µV Long Term Stability T A = 125°C, 1000Hrs. (Note 2)525525mV Output Short Circuit -30-100-180-30-100-180mA Oscillator Section Initial Accuracy T J = 25°C (Note 6)475257475257kHz Voltage Stability 12≤V CC ≤25V0.210.21%Temp. Stability T MIN ≤T A ≤T MAX (Note 2)55%AmplitudeV PIN 4peak to peak (Note 2) 1.7 1.7V Discharge Current T J = 25°C,V PIN 4= 2V (Note 8)7.88.38.87.88.38.8mA V PIN 4= 2V (Note 8)7.58.87.68.8mA Error Amp Section Input VoltageV PIN 1= 2.5V2.45 2.50 2.55 2.42 2.50 2.58V Input Bias Current -0.3-1-0.3-2µA A VOL2≤V O ≤4V65906590dB Unity Gain Bandwidth T J = 25°C (Note 2)0.710.71MHz PSRR12≤V CC ≤25V60706070dB Output Sink Current V PIN 2= 2.7V,V PIN 1= 1.1V 2626mA Output Source Current V PIN 2= 2.3V,V PIN 1= 5V-0.5-0.8-0.5-0.8mA V OUT High V PIN 2= 2.3V,R L = 15k to ground 5656V V OUT LowV PIN 2= 2.7V,R L = 15k to Pin 80.7 1.10.7 1.1V Current Sense Section Gain(Note 3, Note 4) 2.853 3.15 2.853 3.15V/V Maximum Input Signal V PIN 1= 5V (Note 3)0.91 1.10.91 1.1V PSRR12≤V CC ≤25V (Note 3)7070dB Input Bias Current -2-10-2-10µA Delay to Output V PIN 3= 0 to 2V (Note 2)150300150300ns Output Section Output Low Level I SINK = 20mA 0.10.40.10.4V I SINK = 200mA 15 2.215 2.2V Output High Level I SOURCE = 20mA 1313.51313.5V I SOURCE = 200mA1213.51213.5V Rise Time T J = 25°C, C L = 1nF (Note 2)5015050150ns Fall TimeT J = 25°C, C L = 1nF (Note 2)5015050150ns UVLO SaturationV CC = 5V,I SINK = 10mA0.71.20.71.2VELECTRICAL CHARACTERISTICS Unless otherwise stated,these specifications apply for –55°C ≤T A ≤125°C for theUC184xA;–40°C ≤T A ≤125°C for the UC284xAQ;–40°C ≤T A ≤85°C for the UC284xA;0≤T A ≤70°C for the UC384xA;V CC =15V (Note 5);R T =10k;C T =3.3nF;T A =T J ;Pin numbers refer to DIL-8.PARAMETERTEST CONDITIONSUC184xA\UC284xA UC384xAUNITSMIN.TYP.MAX.MIN.TYP.MAX.Under-Voltage Lockout Section Start Threshold x842A/4A 15161714.51617.5V x843A/5A 7.88.49.07.88.49.0V Min. Operation Voltage After x842A/4A 910118.51011.5V Turn On x843A/5A 7.07.68.27.07.68.2V PWM SectionMaximum Duty Cycle x842A/3A 94961009496100%x844A/5A474850474850%Minimum Duty Cycle 00%Total Standby Current Start-Up Current0.30.50.30.5mA Operating Supply Current V PIN 2=V PIN 3= 0V 11171117mA V CC Zener VoltageI CC = 25mA30343034VNote 2:Ensured by design, but not 100% production tested.Note 3:Parameter measured at trip point of latch with V PIN2= 0.Note 4:Gain defined as:A VPIN VPIN =∆∆13;0V PIN 30.8V .Note 5:Adjust V CC above the start threshold before setting at 15V .Note 6:Output frequency equals oscillator frequency for the UC1842A and UC1843A.Output frequency is one half oscillator fre-quency for the UC1844A and UC1845A.Note 7:“Temperature stability, sometimes referred to as average temperature coefficient, is described by the equation:Temp Stability VREF max VREF min TJ max TJ min =−−()()()().V REF (max) and V REF (min) are the maximum & minimum reference volt-age measured over the appropriate temperature range.Note that the extremes in voltage do not necessarily occur at the extremes in temperature.”Note 8:This parameter is measured with R T = 10k to V REF .This contributes approximately 300 A of current to the measurement.The total current flowing into the R T /C pin will be approximately 300 A higher than the measured value.ELECTRICAL CHARACTERISTICS Unless otherwise stated,these specifications apply for –55°C ≤T A ≤125°C for theUC184xA;–40°C ≤T A ≤125°C for the UC284xAQ;–40°C ≤T A ≤85°C for the UC284xA;0≤T A ≤70°C for the UC384xA;V CC =15V (Note 5);R T =10k;C T =3.3nF;T A =T J ;Pin numbers refer to DIL-8.Error Amplifier Open-Loop Frequency ResponseOutput Saturation CharacteristicsUC2842A/3A/4A/5AAPPLICATIONS DATA (cont.)UC2842A/3A/4A/5AUC3842A/3A/4A/5AAPPLICATIONS DATA (cont.)PACKAGING INFORMATIONOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)5962-8670405PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670405VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670405VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670405XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC 5962-8670406PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670406VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670406VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670406XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC 5962-8670407PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670407VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670407VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670407XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC 5962-8670408PA ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC 5962-8670408VPA ACTIVE CDIP JG81None Call TI Level-NC-NC-NC 5962-8670408VXA ACTIVE LCCC FK201None Call TI Level-NC-NC-NC 5962-8670408XA ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NC UC1842AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1842AJ883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1842AJQMLV ACTIVE CDIP JG8None Call TI Call TIUC1842AL883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NCUC1842ALQMLV ACTIVE LCCC FK20None Call TI Call TI UC1843AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1843AJ883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1843AJQMLV ACTIVE CDIP JG8None Call TI Call TIUC1843AL883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NCUC1843ALQMLV ACTIVE LCCC FK20None Call TI Call TI UC1844AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1844AJ883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1844AJQMLV ACTIVE CDIP JG8None Call TI Call TIUC1844AL883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NCUC1844ALQMLV ACTIVE LCCC FK20None Call TI Call TI UC1845AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1845AJ883B ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC1845AJQMLV ACTIVE CDIP JG8None Call TI Call TIUC1845AL883B ACTIVE LCCC FK201None POST-PLATE Level-NC-NC-NCUC1845ALQMLV ACTIVE LCCC FK20None Call TI Call TI UC2842AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2842AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2842AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2842AD8TRG4ACTIVE SOIC D82500None Call TI Call TIUC2842ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2842ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAROrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)UC2842ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC2842AJ OBSOLETE CDIP JG8None Call TI Call TIUC2842AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC2843AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2843AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2843AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2843ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2843ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC2843ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC2843AJ OBSOLETE CDIP JG8None Call TI Call TIUC2843AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC2843AQ ACTIVE PLCC FN2046None CU SNPB Level-2-220C-1YEAR UC2844AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2844AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2844AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2844AD8TRG4PREVIEW SOIC D82500None Call TI Call TIUC2844ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2844ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC2844ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC2844AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC2844AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC2844AQD ACTIVE SOIC D1450None Call TI Level-1-220C-UNLIM UC2844AQD8ACTIVE SOIC D875None Call TI Level-1-220C-UNLIM UC2844AQD8R ACTIVE SOIC D82500None Call TI Level-1-220C-UNLIM UC2844AQDR ACTIVE SOIC D142500None Call TI Level-1-220C-UNLIM UC2845AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC2845AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC2845AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC2845AD8TRG4PREVIEW SOIC D82500None Call TI Call TIUC2845ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC2845ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC2845AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC3842AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3842AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3842AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3842ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3842ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC3842ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC3842AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NC UC3842AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NCOrderable Device Status(1)PackageType PackageDrawingPins PackageQtyEco Plan(2)Lead/Ball Finish MSL Peak Temp(3)UC3842ANG4ACTIVE PDIP P850Green(RoHS&no Sb/Br)CU NIPDAU Level-NA-NA-NAUC3843AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3843AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3843AD8G4ACTIVE SOIC D875None Call TI Call TIUC3843AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3843AD8TRG4ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIMUC3843ADG4ACTIVE SOIC D1450Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM UC3843ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3843AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC3843AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NCUC3843ANG4ACTIVE PDIP P850Green(RoHS&no Sb/Br)CU NIPDAU Level-NA-NA-NA UC3844AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3844AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3844AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3844AD8TRG4ACTIVE SOIC D82500Green(RoHS&no Sb/Br)CU NIPDAU Level-1-260C-UNLIM UC3844ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3844ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC3844ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC3844AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NC UC3845AD ACTIVE SOIC D1450None CU NIPDAU Level-1-220C-UNLIM UC3845AD8ACTIVE SOIC D875None CU NIPDAU Level-1-220C-UNLIM UC3845AD8TR ACTIVE SOIC D82500None CU NIPDAU Level-1-220C-UNLIM UC3845ADTR ACTIVE SOIC D142500None CU NIPDAU Level-1-220C-UNLIM UC3845ADW ACTIVE SOIC DW1640None CU NIPDAU Level-2-220C-1YEAR UC3845ADWTR ACTIVE SOIC DW162000None CU NIPDAU Level-2-220C-1YEAR UC3845AJ ACTIVE CDIP JG81None A42SNPB Level-NC-NC-NCUC3845AN ACTIVE PDIP P850Pb-Free(RoHS)CU SNPB Level-NC-NC-NCUC3845ANG4ACTIVE PDIP P850Green(RoHS&no Sb/Br)CU NIPDAU Level-NA-NA-NA(1)The marketing status values are defined as follows:ACTIVE:Product device recommended for new designs.LIFEBUY:TI has announced that the device will be discontinued,and a lifetime-buy period is in effect.NRND:Not recommended for new designs.Device is in production to support existing customers,but TI does not recommend using this part in a new design.PREVIEW:Device has been announced but is not in production.Samples may or may not be available.OBSOLETE:TI has discontinued the production of the device.(2)Eco Plan-May not be currently available-please check /productcontent for the latest availability information and additional product content details.None:Not yet available Lead(Pb-Free).Pb-Free(RoHS):TI's terms"Lead-Free"or"Pb-Free"mean semiconductor products that are compatible with the current RoHS requirementsfor all 6substances,including the requirement that lead not exceed 0.1%by weight in homogeneous materials.Where designed to be soldered at high temperatures,TI Pb-Free products are suitable for use in specified lead-free processes.Green (RoHS &no Sb/Br):TI defines "Green"to mean "Pb-Free"and in addition,uses package materials that do not contain halogens,including bromine (Br)or antimony (Sb)above 0.1%of total product weight.(3)MSL,Peak Temp.--The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications,and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided.TI bases its knowledge and belief on information provided by third parties,and makes no representation or warranty as to the accuracy of such information.Efforts are underway to better integrate information from third parties.TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary,and thus CAS numbers and other limited information may not be available for release.In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s)at issue in this document sold by TI to Customer on an annualbasis.PACKAGE OPTION ADDENDUM 10-Mar-2005Addendum-Page 4元器件交易网。

易 Wi-Fi 扩展器 RE580D 产品说明书

191001121910011262AC 1900RE580DCOPYRIGHT & TRADEMARKSSpecifications are subject to change without notice. is a registered trademark of TP-LINK TECHNOLOGIES CO., LTD. Other brands and product names are trademarks or registered trademarks of their respective holders.No part of the specifications may be reproduced in any form or by any means or used to make any derivative such as translation, transformation, or adaptation without permission from TP-LINK TECHNOLOGIES CO., LTD. Copyright ©2015 TP-LINK TECHNOLOGIES CO., LTD.All rights reserved.FCC STATEMENTThis equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more of the following measures:●Reorient or relocate the receiving antenna.●Increase the separation between the equipment and receiver.●Connect the equipment into an outlet on a circuit different from that towhich the receiver is connected.●Consult the dealer or an experienced radio/ TV technician for help. This device complies with part 15 of the FCC Rules. Operation is subject to the following two conditions:1)This device may not cause harmful interference.2)This device must accept any interference received, includinginterference that may cause undesired operation.Any changes or modifications not expressly approved by the party responsible for compliance could void the user’s authority to operate the equipment.Note: The manufacturer is not responsible for any radio or tv interference caused by unauthorized modifications to this equipment. Such modifications could void the user’s authority to operate the equipment.FCC RF Radiation Exposure StatementThis equipment complies with FCC RF radiation exposure limits set forth for an uncontrolled environment. This device and its antenna must not be co-located or operating in conjunction with any other antenna or transmitter. “To comply with FCC RF exposure compliance requirements, this grant is applicable to only Mobile Configurations. The antennas used for this transmitter must be installed to provide a separation distance of at least 20 cm from all persons and must not be co-located or operating in conjunction with any other antenna or transmitter.”CE Mark WarningThis is a class B product. In a domestic environment, this product may cause radio interference, in which case the user may be required to take adequate measures.National RestrictionsThis device is intended for home and office use in all EU countries (and other countries following the EU directive 1999/5/EC) without any limitationCountry Restriction Reason/remarkBulgaria None General authorization required foroutdoor use and public serviceFrance Outdoor use limited to10 mW e.i.r.p. withinthe band 2454-2483.5MHz Military Radiolocation use. Refarming of the 2.4 GHz band has been ongoing in recent years to allow current relaxed regulation. Full implementation planned 2012Italy None If used outside of own premises,general authorization is required Luxembourg None General authorization required fornetwork and service supply(not forspectrum)Norway Implemented This subsection does not apply forthe geographical area within a radiusof 20 km from the centre of Ny-ÅlesundRussian Federation None Only for indoor applications Note: Please don’t use the product outdoors in France.5150-5250 MHzCountry Restriction Reason/remarkBulgaria Not implemented PlannedCroatia License requiredItaly General authorization required if used outside own premisesLuxembourg None General authorization required fornetwork and service supply (not forspectrum)Russian Federation No infoNote: Operations in the 5.15-5.25GHz band are restricted to indoor usage only.Canadian Compliance StatementThis device complies with Industry Canada license-exempt RSSs. Operation is subject to the following two conditions:1)This device may not cause interference, and2)This device must accept any interference, including interference thatmay cause undesired operation of the device.Le présent appareil est conforme aux CNR d'Industrie Canada applicables aux appareils radio exempts de licence. L'exploitation est autorisée aux deux conditions suivantes :1)l'appareil nedoit pas produire de brouillage, et2)l'utilisateur de l'appareil doit accepter tout brouillage radioélectriquesubi, même si le brouillage est susceptible d'en compromettre le fonctionnement.Industry Canada StatementComplies with the Canadian ICES-003 Class B specifications.Cet appareil numérique de la classe B est conforme à la norme NMB-003 du Canada.CAN ICES-3 (B)/NMB-3(B)Radiation Exposure Statement:This equipment complies with IC radiation exposure limits set forth for an uncontrolled environment. This equipment should be installed and operated with minimum distance 20cm between the radiator & your body.Déclaration d'exposition aux radiations:Cet équipement est conforme aux limites d'exposition aux rayonnements IC établies pour un environnement non contrôlé. Cet équipement doit être installé et utilisé avec un minimum de 20 cm de distance entre la source de rayonnement et votre corps.Korea Warning Statements당해무선설비는운용중전파혼신가능성이있음.NCC Notice & BSMI Notice注意！依據低功率電波輻射性電機管理辦法第十二條經型式認證合格之低功率射頻電機，非經許可，公司、商號或使用者均不得擅自變更頻率、加大功率或變更原設計之特性或功能。

CLAA170EA03

1. OVERVIEWCLAA170EA03 is 17” color TFT-LCD (Thin Film Transistor Liquid Crystal Display) module composed of LCD panel, RSDS driver ICs, control circuit and backlight.By applying 6 bit digital data, 1280 1024, 262K color(6Bit) images are displayed on the17.0” diagonal screen. Input power voltage is 12.0V for LCD driving.Inverter for backlight is not included in this module. General specification are summarized in the following table:ITEM SPECIFICATION Display Area(mm) 337.920 (H)x270.336 (V) (17.0-inch diagonal)Number of Pixels 1280(H)x1024(V)Pixel Pitch(mm) 0.264(H)x0.264(V)Color Pixel Arrangement RGB vertical stripeDisplay Mode normally white, TNNumber of Colors 262144colors(6bit)Brightness(cd/m^2) 300cd/m2(Typ.)(Center point,lamp current:7mA)Viewing Angle 140/130(Typ.)Wide Viewing Angle Technology Optical Compensation FilmSurface Treatment Anti-glareElectrical Interface RSDS (2 pixel/clock)Total Module Power(W) 20(Typ.)Optimum Viewing Angle 6 o’clockModule Size(mm) 358.5(W)x296.5(H)x17.0(D)Module Weight(g) 1800(typ.)Backlight Unit CCFL, 4 tables, edge-light(top*2/bottom*2)The LCD Products listed on this document are not suitable for use of aerospace equipment, submarine cables, nuclear reactor control system and life support systems. If customers intend to use these LCD products for above application or not listed in"Standard" as follows, please contact our sales people in advance.Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tool, Industrial robot, Audio and Visual equipment, Otherconsumer products.2. ABSOLUTE MAXIMUM RATINGSMAX.UNITMIN.ITEM SYMBOLPower Supply Voltage for LCD V C C-0.3 20.0 VLogic Input Voltage V D D D-0.3 5.0 VV ESD t-200 200 VStatic ElectricityV ESD c -8000 8000 VICC Rush Current I R U SH c - 3.0 AIDD Rush Current I R U SH d - 0.75 ALamp Voltage V L 0 2500 V r m sLamp Current I L 0 10.0m A r m s Lamp Frequency FL - 100 kH z Operation Temperature T op0 50 ¢JStorage Temperature T stg-20 60 J VESDt ¡G Contact discharge to input connectorVESDc¡G Contact discharge to module50£g sec , If Vcc rise time increase then I RUSH decrease.Humidity¡GHumidit85%RH without condensation.Relative Humidity ¡95% (Ta¡ 40¢)Wet Bulb Temperature ¡39¢(Ta¡40¢)T op ¡B T stg Humidity40¢: Relative Humidity¡90¢M RH without condensation.T op ¡B T stg Humidity40¢:40¢A Absolute Humidity¡90¢M RH without condensation.3. ELECTRICAL CHARACTERISTICS (a)TFT-LCDITEM SYMBOL MIN TYP MAX UNIT RemarkPower Supply Voltage for Logic VDDD 3.0 3.3 3.6 V Power Supply Current for Logic IDDD -- 40 100 mAPermissive Ripple Voltage for Logic VDRP -- -- 30 mVp-pV=+3.3V Power Supply Voltage VCC 10.8 12.0 13.2 V Power Supply Current ICC -- 100 250 mAPermissive Ripple Voltage VCRP - - 100 mVp-p V=+12.0V Differential impendence Zm 90 100 110 [High VIH 2.5 3.3 3.6 VInput Threshold VoltageLow VIL 0 -- 0.8V [Note 1]Power sequence0<T1¡B T4¡B T5¡B T6¡10ms 0<T2¡20ms ¡F 200ms¡T3VCC T1 T2 T3 T4 T5 T6VCC-dip conditions1) W hen 8.64V Vin(min)<10.8V td 10 ms 2) W hen VCC 8.64VVCC-dip conditions should also follow the VCC-turn-on conditions.[Note 2] Typical current situation : 64-gray-bar pattern, 1280 line modeVCC=12.0 V¡A f H =64 kHz¡A f V =60 Hz¡A f CLK =54 MHzVDDD=3.3 V¡A f H =64 kHz¡A f V =60 Hz¡A f CLK =54 MHz(b)BacklightITEM SYMBOL MIN TYP MAX UNIT REMARKLamp Voltage VL -- 710 -- V IL=7.0mA Lamp Current IL 5.0 7.0 8.0mA Note1 Interter Frequency FL 45 50 70 kHz Note2 1350 - - V Tb=0¢J A Note3 Starting LampVoltage VS1080 - - VTa=25¢J A Note3 -- 50,000 -- hrIL=6.0mAContinuous Operation Lamp life Time LT-- 40,000 -- hrIL=7.0mAContinuous Operation[Note 1] Lamp Current measurement method ( The current meter is inserted in cold line)A¡G The degrees of unbal a nce =W Ip – I-p¡W / Irms ×100 (%)B¡G The ratio of wave height = Ip (or I-p) / Irms[Note 3]Definition of the lamp life timeLuminance: L under 50% of specification(C) RSDS CHARACTERISTICSITEMSYMBOLCONDICTION MIN TYP MAX UNITRSDS Input high voltage high levelVIHRSDSVCMRSDS=+1.2V 100 200 - mV RSDS Input high voltage low level VILRSDS VCMRSDS=+1.2V - -200 -100mVRSDS common mode Input voltage rangeVCMRS DS VDIFF RSDS (2) = 200 mV (minimum value)1.0 - 1.4V RSDS leakage of input current IDLDxxP,DxxN,CLKP,CLKN-10 - 10 uA[Note]1. VCM RSDS = (VCLKP + VCLKN) / 2 or VCMRSDS = (VDxxP + VDxxN) / 22. VDIFF RSDS = VCLKP - VCLKN or VDIFFRSDS = VDxxP – VDxxNRSDS Standard V-p to Vp value is 400mV from-200mV to +200mV.4. INTERFACE PIN CONNECTION(a)CN1(Data Signal and Power Supply)Used connector:IL-FHR-B30S-HF(JAE)PIN NO. symbol Function1 GND Ground2 B2P_B RSDS Blue Data(+)( Back side)3 B2N_B RSDS Blue Data(-)( Back side)4 GND Ground5 B1P_B RSDS Blue Data(+)( Back side)6 B1N_B RSDS Blue Data(-)( Back side)7 GND Ground8 B0P_B RSDS Blue Data(+)( Back side)9 B0N_B RSDS Blue Data(-)( Back side)10 GND Ground11 G2P_B RSDS Green Data (+)( Back side)12 G2N_B RSDS Green Data (-)( Back side)13 GND Ground14 G1P_B RSDS Green Data (+)( Back side)15 G1N_B RSDS Green Data (-)( Back side)16 GND Ground17 G0P_B RSDS Green Data (+)( Back side)18 G0N_B RSDS Green Data (-)( Back side)19 GND Ground20 CLKP_B Source Driver IC RSDS CLK (+)( Back side)21 CLKN_B Source Driver IC RSDS CLK (-)( Back side)22 GND Ground23 R2P_B RSDS Red Data (+)( Back side)24 R2N_B RSDS Red Data (-)( Back side)25 GND Ground26 R1P_B RSDS Red Data (+)( Back side)27 R1N_B RSDS Red Data (-)( Back side)28 GND Ground29 R0P_B RSDS Red Data (+)( Back side)30 R0N_B RSDS Red Data (-)( Back side)(b)CN2 Used connector: IL-FHR-B50S-HF(JAE)Pin NO. symbol FunctionGround1 GNDRSDS Blue Data(+)( Front side)2 B2P_FRSDS Blue Data(-)( Front side)3 B2N_FGround4 GNDRSDS Blue Data(+)( Front side)5 B1P_FRSDS Blue Data(-)( Front side)6 B1N_FGround7 GNDRSDS Blue Data(+)( Front side)8 B0P_FRSDS Blue Data(-)( Front side)9 B0N_FGround10 GND11 G2P_FRSDS Green Data (+)( Front side)12 G2N_FRSDS Green Data (-)( Front side)Ground13 GND14 G1P_FRSDS Green Data (+)( Front side)15 G1N_FRSDS Green Data (-)( Front side)Ground16 GND17 G0P_FRSDS Green Data (+)( Front side)18 G0N_FRSDS Green Data (-)( Front side)Ground19 GNDSource Driver IC RSDS CLK (+)( Front side)20 CLKP_FSource Driver IC RSDS CLK (-)( Front side)21 CLKN_FGround22 GND23 R2P_FRSDS Red Data (+)( Front side)24 R2N_FRSDS Red Data (-)( Front side)Ground25 GND26 R1P_FRSDS Red Data (+)( Front side)27 R1N_FRSDS Red Data (-)( Front side)Ground28 GND29 R0P_FRSDS Red Data (+)( Front side)30 R0N_FRSDS Red Data (-)( Front side)Ground31 GND32 STH_F Source Driver IC Start pulse( Front side)33 LP Source Driver IC Latch Pulse34 POL Source Driver M signal35 STH_B Source Driver IC Start pulse( Back side)Ground36 GND37 CLKV38 STV Gate Driver IC Start pulseGate Driver IC Output Enable39 OEN.C.40 VCOM(test)Ground41 GND42 3.3V Power Supply Voltage for Logic43 3.3V Power Supply Voltage for Logic44 12V LCD Power SupplyGround45 GND46 12V LCD Power Supply47 12V LCD Power Supply48 12V LCD Power SupplyNC49 NC50 NCNC(C)CN3,4(BACKLIGHT)connector:Backlight-sideBHR-04VS-1(JST)connector:Inverter-sideSM04(4.0)B-BHS-1-TB(JST)Pin No. Symbol FunctionVOLTAGE)1 CTH1VBLH1(HIGHVBLH2(HIGHVOLTAGE)2 CTH2-3 -VOLTAGE)4 CTL1VBLL(LOW[Note]VBLH-VBLL = VL5. INTERFACE TIMING(a) T iming SpecificationsItem Symbol Min Typ Max UnitFrequenc fCLK 41.6 54 67.5 MHzLCD Timing DCLKperiod t CLK 14.8 18.5 24 nsHorizontal signal:Item SymbolMinTypMax Unit CLK pulse width Tw 14 18.5 24 nsCLK pulse width Twh 6 - - nsCLK pulse width Twl 6 - - nsDATA set-up time Tst1 4 - - nsDATA hold time Thd1 0.2 - - nsSTH set-up time Tst2 4 - - nsSTH hold time Thd2 4 - - nsSTH pulse width Twsth 1 1 2 CLKP periodLP pulse width (H) Twlp (48) - (53) CLKP periodLP to STH setup time Tlp-sth 5 - -CLKP period Last data time Tldt 1 - - CLKP periodCLK-LP time Tclk-lp 4 - - nsLP-POL time Tlp-pol (640) - (784) CLKP periodPOL-LP time Tpol-lp (7) - (30) CLKP periodVertical sigal:Item SymbolMIN TYP MAX Unit STV set-up time tst(STV) 1 - - µsSTV hold time thd(STV) 1 - - µsCLKV period tw(CLKV)8 - - µsCLKV High width twH(CLKV) 3.5 - - µsCLKV Low width twL(CLKV) 3.5 - - µsOE pulse width Tw(OE) 2.4 2.9 3.4 µsOE-CLKV time tOE-CLKV 1.5 2 3 µsLP rise-CLKV rise time tLP-CLKV 0 0 0 ns(b) Timing Charta. Horizontal Timing Chart Timing Diagram 1InvalidInvalid1st Data 2nd Data EVENEVENODDODDEVENODD EVENODD EVENODDT WSTH_FT LDT90%10%T LP-CLKPT WLPT POL-LPT LP-POL90%10%90%10%90%10%DxxP_F-DxxN_F(RSDS)STH_FLPPOL T LP-STH_FLast DataInvalid Invalid10%10%STH_BInvalidInvalid1st Data2nd DataEVENEVENODDODDEVENODD EVENODD EVENODDLast DataDxxP_B-DxxN_B(RSDS)50%50%50%50%CLKP_F-CLKN_F(RSDS)CLKP_B-CLKN_B(RSDS)dd_FCLKP_CLKN_B (RSDS) _F STH_B_F DxxP-DxxN_B (RSDS)b. Vertical Timing ChartVertical Signal 1CLKVSTVOELPtLP-CLKV[Note]¡G STV¡B CLKV output signal speci ficat i ons l e vel is V OL(MAX)=80%¡B V OH(MIN)=20%.c. Color Data AssignmentCPTCHUNGHWA PICTURES TUBES, LTD.,COLORINPUT DATA R5 R4 MSB 0 0 1 1 0 0 0 0 0 0 1 1 1 1 1 1 0 0 0 0 0 0R DATA R3 R2 0 1 0 0 0 1 1 1 0 0 0 0 1 0 0 0 1 1 1 0 0 0R1 0 1 0 0 0 1 1 1 0 0 1BASIC COLORBLACK RED(63) GREEN(63) BLUE(63) CYAN MAGENTA YELLOW WHITE RED(0) RED(1) RED(2)G DATA R0 G5 G4 G3 G2 G1 G0 B5 LSB MSB LSB MSB 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 1 1 1 1 1 1 1 1 0 0 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0B4 0 0 0 1 1 1 0 1 0 0 0B DATA B3 B2 0 0 0 1 1 1 0 1 0 0 0 0 0 0 1 1 1 0 1 0 0 0B1 0 0 0 1 1 1 0 1 0 0 0B0 LSB 0 0 0 1 1 1 0 1 0 0 0RED RED(62) RED(63) GREEN(0) GREEN(1) GREEN(2) GREEN GREEN(62) GREEN(63) BLUE(0) BLUE(1) BLUE(2) BLUE BLUE(62) BLUE(63) 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 1 1 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 1 0 0 0 1 1 0 0 0 1 1 0 0 0 1 1 0 0 0 1 1 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 1 0 1 1 0 0 0 1 1 0 0 0 1 1 0 0 0 1 1 0 0 0 1 1 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0[Note] (1)Definition of gray scale: Color(n) : n indicates gray scale level. Higher n means brighter level. (2) Data:1-High,0-Low. (d)Color Data AssignmentD(1,1) D(1,2) .. D(1,Y) .. D(1,1023) D(1,1024) D(2,1) D(2,2) .. D(2,Y) .. D(2,1023) D(2,1024) .. .. + .. + .. .. D(X,1) D(X,2) .. D(X,Y) .. D(X,1023) D(X,1024) .. .. + .. + .. .. D(1279,1) D(1279,2) .. D(1279,Y) .. D(1279,1023) D(1279,1024) D(1280,1) D(1280,2) .. D(1280,Y) .. D(1280,1023) D(1280,1024)CPT Confidential10/18CLAA170EA03- -2003/03/11CPTCHUNGHWA PICTURES TUBES, LTD.,6. BLOCK DIAGRAMTFT-LCD ModuleCN1 Backlight Back RSDS Signals Voltag e Suppl for y Gray Level And Vcom CN3Source BoardFrontRSDS Si s gnal Gate BoardSXGA 1280*1024 TFT PanelCont ol Signal r s+12V DC InputDC-DC Convert er Backlight CN4BACK LIGHT CCFL CN3,4 1 2 4INVERTER CIRCUIT (OUT SIDE) CN3,4 1 2 4 DC-AC InverterLIGHT CONTROLCPT Confidential11/18CLAA170EA03- -2003/03/11CPTCHUNGHWA PICTURES TUBES, LTD.,7. MECHANICAL SPECIFICATION(a) Front side Unit: mmTolerance is ¡Ó 0.5mm unless notedCPT Confidential12/18CLAA170EA03- -2003/03/11CPT (b) Rear sideCHUNGHWA PICTURES TUBES, LTD.,Unit: mmTolerance is ¡Ó 0.5mm unless notedCPT Confidential13/18CLAA170EA03- -2003/03/11CPTCHUNGHWA PICTURES TUBES, LTD.,8.OPTICAL CHARACTERISTICSTa = 25°C , Vcc=12.0VITEM Contrast Ratio Normal Uniformit Normal Uniformit SYMBO L CR L ∆ L ∆ Tf Ti s £r θ £r θ Wx Wy Rx Ry Gx Gy Bx By CONDITION θ θ θ θ θ θ θ θ 2hour -- 75~75 - 60~60 0.283 0.299 0.607 0.314 0.280 0.552 -- 85~85 - 70~70 0.313 0.329 0.637 0.344 0.310 0.582 2 --0.343 0.359 0.667 0.374 0.340 0.612 MIN. TYP. MAX. UNITLuminance 9 point% %Response Time Image Sticking Horizontal Vertical Viewing Angle Horizontal Vertical White Red Color Coordinates Green Blues ec ° ° ° °θ[Note] These items are measured using CS-1000 (MINOLUTA) OR BM-5A(TOPCON)under the dark room condition( no ambient light) after more than 30 minutes from turning on the lamp unless noted. Condition: IL=7.0*4(lamp)mA, Inverter Frequency=50kHz. Definition of these measurement items are as follows: (1)Definition of Contrast Ratio¡G CR=ON(White)Luminance/OFF(Black)Luminance (2) Definition of Luminance and Luminance uniformity Measure White Luminance on the below center(5)¡A 5 point(5,10,11,12,13) and 9 point(1~9). Uniformity¡G 5 point ¡G ∆ ∆W1/10 W(1,1) 256 512 768 7 320 4 12 8 1 10 2 11 3 1/10 H5 136H9 (1280,1024)640 14/18960CPT ConfidentialCLAA170EA03- -2003/03/11CPTCHUNGHWA PICTURES TUBES, LTD.,(3) Definition of Viewing Angle(£c ,£r )Upper(+)£c£rLeft(-)Right(+)LCD Panel(4)Definition of Response Time(5) Image sticking: Continuously display the test pattern shown in the figure below for two-hours. Then display a completely white screen. The previous image shall not persist more than two seconds at 25¢J .CPT Confidential15/18CLAA170EA03- -2003/03/11CPTCHUNGHWA PICTURES TUBES, LTD.,TEST PATTERN FOR IM AGE STICKING TESTCols 638-642W hite AreaRows 510-514Black Lines9.RELIABILITY TEST CONDITIONS(1) Temperature and HumidityTEST ITEMS HIGH TEMPERATURE HIGH HUMIDITY OPERATION HIGH TEMPERATURE HIGH HUMIDITY STORAGE HIGH TEMPERATURE OPERATION LOW TEMPERATURE STORAGE THERMAL SHOCK HIGH TEMPERATURE STORAGE LOW TEMPERATURE OPERATION CONDITIONS 40¢J ; 95%RH; 240h (No condensation) 60¢J ; 90%RH;48h (No condensation) 50¢J ; 240h -20¢J ; 240h BETWEEN -20¢J (1hr)AND 60¢J (1hr); 100 CYCLES 60¢J ; 240h 0¢J ; 240h(2)Shock & VibrationITEMS CONDITIONS SHOCK Shock level:1470m/s^2(150G) (NON-OPERATION) Waveform: half sinusoidal wave, 2ms Number of shocks: one shock input in each direction of three mutually perpendicular axes for a total of six shock inputs VIBRATION Vibration level: 9.8m/s^2(1.0G) zero to peak (NON-OPERATION) Waveform: sinusoidal Frequency range: 5 to 500 Hz Frequency sweep rate: 0.5 octave/min Duration: one sweep from 5 to 500Hz in each of three mutually perpendicular axis(each x,y,z axis: 1 hour, total 3 hours)(3)Judgment standard The judgment of the above test should be made as follow: Pass: Normal display image with no obvious non-uniformity and no line defect. Partial transformation of the module parts should be ignored. Fail: No display image, obvious non-uniformity, or line defects.CPT Confidential16/18CLAA170EA03- -2003/03/11CPTCHUNGHWA PICTURES TUBES, LTD.,10. HANDLING PRECAUTIONS FOR TFT-LCD MODULEPlease pay attention to the followings in handling- TFT-LCD products; 1 ASSEMBLY PRECAUTION (1) Please use the mounting hole on the module side in installing and do not beading or wrenching LCD in assembling. And please do not drop, bend or twist LCD module in handling. (2) Please design display housing in accordance with the following guide lines. (2.1) Housing case must be destined carefully so as not to put stresses on LCD all sides and not to wrench module. The stresses may cause non-uniformity even if there is no non-uniformity statically. (2.2) Keep sufficient clearance between LCD module back surface and housing when the LCD module is mounted. Approximately 1.0 mm of the clearance in the design is recommended taking into account the tolerance of LCD module thickness and mounting structure height on the housing. (2.3) When some parts, such as, FPC cable and ferrite plate, are installed underneath the LCD module, still sufficient clearance is required, such as 0.5mm. This clearance is, especially, to be reconsidered when the additional parts are implemented for EMI countermeasure. (2.4) Design the inverter location and connector position carefully so as not to give stress to lamp cable, or not to interface the LCD module by the lamp cable. (2.5) Keep sufficient clearance between LCD module and the others parts, such as inverter and speaker so as not to interface the LCD module. Approximately 1.0mm of the clearance in the design is recommended. (3) Please do not push or scratch LCD panel surface with any-thing hard. And do not soil LCD panel surface by touching with bare hands. ( Polarizer film, surface of LCD panel is easy to be flawed.) (4) Please do not press any parts on the rear side such as source TCP, gate TCP, control circuit board and FPCs during handling LCD module. If pressing rear part is unavoidable, handle the LCD module with care not to damage them. (5) Please wipe out LCD panel surface with absorbent cotton or soft cloth in case of it being soiled. (6) Please wipe out drops of adhesives like saliva and water on LCD panel surface immediately. They might damage to cause panel surface variation and color change. (7) Please do not take a LCD module to pieces and reconstruct it. Resolving and reconstructing modules may cause them not to work well. (8) Please do not touch metal frames with bare hands and soiled gloves. A color change of the metal frames can happen during a long preservation of soiled LCD modules. (9) Please pay attention to handling lead wire of backlight so that it is not tugged in connecting with inverter. 2 OPERATING PRECAUTIONS (1) Please be sure to turn off the power supply before connecting and disconnecting signal input cable. (2) Please do not change variable resistance settings in LCD module. They are adjusted to the most suitable value. If they are changed, it might happen LCD does not satisfy the characteristics specification. (3) Please consider that LCD backlight takes longer time to become stable of radiation characteristics in low temperature than in room temperature. (4) A condensation might happen on the surface and inside of LCD module in case of sudden change of ambient temperature. (5) Please pay attention to displaying the same pattern for very long time. Image might CPT Confidential17/18CLAA170EA03- -2003/03/11CPTCHUNGHWA PICTURES TUBES, LTD., stick on LCD. If then, time going on can make LCD work well. (6) Please obey the same caution descriptions as ones that need to pay attention to ordinary electronic parts.3 PRECAUTIONS WITH ELECTROSTATICS (1) This LCD module use CMOS-IC on circuit board and TFT-LCD panel, and so it is easy to be affected by electrostatics. Please be careful with electrostatics by the way of your body connecting to the ground and so on. (2) Please remove protection film very slowly on the surface of LCD module to prevent from electrostatics occurrence. 4 STORAGE PRECAUTIONS (1) When you store LCDs for a long time, it is recommended to keep the temperature between 0¢J ~40¢J without the exposure of sunlight and to keep the humidity less than 90%RH. (2) Please do not leave the LCDs in the environment of high humidity and high temperature such as 60¢J 90%RH. (3) Please do not leave the LCDs in the environment of low temperature; below -20¢J . 5 SAFETY PRECAUTIONS (1) When you waste LCDs, it is recommended to crush damaged or unnecessary LCDs into pieces and wash them off with solvents such as acetone and ethanol, which should later be burned. (2) If any liquid leaks out of a damaged-glass cell and comes in contact with the hands, wash off throughly with soap and water. 6 OTHERS (1) A strong incident light into LCD panel might cause display characteristics' changing inferior because of polarizer film, color filter, and other materials becoming inferior. Please do not expose LCD module direct sunlight Land strong UV rays. (2) Please pay attention to a panel side of LCD module not to contact with other materials in preserving it alone. (3) For the packaging box, please pay attention to the followings: (3.1) Packaging box and inner case for LCD are designed to protect the LCDs from the damage or scratching during transportation. Please do not open except picking LCDs up from the box. (3.2) Please do not pile them up more than 3 boxes. (They are not designed so.) And please do not turn over. (3.3) Please handle packaging box with care not to give them sudden shock and vibrations. And also please do not throw them up. (3.4) Packing box and inner case for LCDs are made of cardboard. So please pay attention not to get them wet. (Such like keeping them in high humidity or wet place can occur getting them wet.)CPT Confidential18/18CLAA170EA03- -2003/03/11。

「外滩公共服务中心工程太阳能光伏发电设备采购项目-投标文件(商务)03.09」

[键入公司名称][键入文档标题] [键入文档副标题]2012-3-12目录文件一投标书 (2)文件二开标一览表 .......................................... 错误!未定义书签。

文件三投标价格表 .......................................... 错误!未定义书签。

文件四货物简要说明一览表........................... 错误!未定义书签。

文件五投标人资质证明文件........................... 错误!未定义书签。

文件六合同条款、规格、技术参数偏离表 ... 错误!未定义书签。

文件七投标方推荐的选择清单....................... 错误!未定义书签。

文件八投标保函 (6)文件九投标人提供货物的资格证明 ............... 错误!未定义书签。

ﻬ文件一投标书投标书致：_上海机电设备招标有限公司_根据贵方为__外滩公共服务中心工程太阳能光伏发电设备采购项目招标采购货物及服务的投标邀请__4０196 _(招标编号）,签字代表＿_柳扬、销售经理（全名、职务)经正式授权并代表投标方__＿上海比亚迪有限公司、上海市松江区香泾路999号＿_ (投标方名称、地址）提交下述文件正本一份和副本一式四份。

⑴开标一览表⑵投标价格表⑶货物简要说明一览表⑷资格证明文件⑸按投标方须知第15条要求提供的全部文件⑹由＿_＿_（银行名称)出具的投标保证金，金额为__＿__＿___＿_______＿___＿_＿。

据此函，签字代表宣布同意如下：1. 所附投标报价表中规定的应提供和交付的货物投标总价为＿＿__＿_＿＿___＿__＿____________＿(注明币种)，即＿______________________＿＿＿_＿（大写）。

２. 投标方将按招标文件的规定履行合同责任和义务。

３. 投标方已详细审查全部招标文件，包括修改文件(如有的话）以及全部参考资料和有关附件。

导电胶584-29中文说明书

导电胶584-29中文说明书摘要：一、导电胶584-29 概述二、导电胶584-29 的用途和性能三、导电胶584-29 的施工方法四、导电胶584-29 的注意事项五、结语正文：【导电胶584-29 概述】导电胶584-29 是一种双组份导电粘合剂，具有优良的导电性能和粘接性能。

它主要由导电粒子、树脂、溶剂和添加剂组成，可通过混合和涂抹的方式施工。

导电胶584-29 广泛应用于电子、电气、通信等行业，可粘接各种导电材料，如金属、石墨、碳纤维等。

【导电胶584-29 的用途和性能】导电胶584-29 的主要用途是粘接和连接各种导电材料，以实现导电通路。

其优良的导电性能和粘接性能可确保粘接后的导电材料具有稳定的导电性能，从而满足电子、电气产品的性能要求。

此外，导电胶584-29 还具有良好的耐热性、耐腐蚀性和抗氧化性，可保证在恶劣环境下仍具有稳定的性能。

【导电胶584-29 的施工方法】导电胶584-29 的施工方法如下：1.将导电胶584-29 的A、B 两组份按照规定的比例混合均匀。

2.将混合好的导电胶584-29 涂抹在待粘接的导电材料表面，并施加适当的压力，使导电胶584-29 充分渗透到粘接部位。

3.将粘接好的导电材料放置在合适的环境中，等待导电胶584-29 固化。

【导电胶584-29 的注意事项】在使用导电胶584-29 时，应注意以下几点：1.导电胶584-29 应存放在阴凉、干燥、通风的环境中，避免阳光直射和高温。

2.导电胶584-29 在施工过程中应避免与皮肤直接接触，如有接触，应立即用清水冲洗。

3.导电胶584-29 在施工过程中应避免吸入粉尘，操作时应佩戴口罩。

4.导电胶584-29 在固化过程中会释放一定的热量，应避免触摸已固化的导电胶584-29。

【结语】导电胶584-29 是一种性能优良的导电粘合剂，广泛应用于电子、电气、通信等行业。

CD2399 混响处理器芯片产品说明书

CD2399混响处理器芯片产品说明书说明书发行履历：版本发行时间新制/修订内容2010-01-A 2010-01 更换新模板2012-01-B1 2012-01 增加说明书编号及发行履历江苏省无锡市蠡园经济开发区滴翠路100号9栋2层第 1 页共 9 页http://www.i-core. cn 邮编：214072版本：2012-01-B11、概述CD2399是一块混响处理器芯片，该芯片采用CMOS工艺，具备数模、模数转换功能和很高的取样频率，同时还内置了一个44K的存储器。

数字处理部分产生延迟时间。

系统时钟采用内置压控振荡器产生，是数字处理电路的一大特点，它使得频率很容易调整。

CD2399的优势在于它具有很低的失真系数(THD< 0.5%)和噪声(N O<-90dBV)，因此能够输出高品质的音频信号。

为了追求更简单的PCB 版图布局和更低成本，CD2399的引脚排列和应用电路都进行了优化。

CD2399主要应用于录象机、VCD机、电视、CD机、卡拉OK混频器、电子音乐器具、具有回音处理器的音频设备等系统。

其主要特点如下：●采用CMOS工艺江苏省无锡市蠡园经济开发区滴翠路100号9栋2层第 3 页共 9 页http://www.i-core. cn 邮编：214072版本：2012-01-B1江苏省无锡市蠡园经济开发区滴翠路100号9栋2层第 4 页共 9 页http://www.i-core. cn 邮编：214072版本：2012-01-B13.2、推荐使用条件推荐值参数名称符号最小典型最大单位电源电压 VCC 4.5 5 5.5 V 时钟频率f CK 4 5 MHz3.3、电气特性交流特性（若无特殊说明：V CC=5.0V, fin=1KHz,V I=100mVrms,f CK=4MHz,Ta=25℃）fCK=时钟频率（Hz）td=延迟时间THD=总谐波失真江苏省无锡市蠡园经济开发区滴翠路100号9栋2层第 6 页共 9 页http://www.i-core. cn 邮编：214072版本：2012-01-B15、封装尺寸与外形图5. 1、DIP16-300-2.54外形图与封装尺寸江苏省无锡市蠡园经济开发区滴翠路100号9栋2层第 7 页共 9 页http://www.i-core. cn 邮编：214072版本：2012-01-B15. 2、SOP16外形图与封装尺寸江苏省无锡市蠡园经济开发区滴翠路100号9栋2层第 8 页共 9 页http://www.i-core. cn 邮编：214072版本：2012-01-B1江苏省无锡市蠡园经济开发区滴翠路100号9栋2层第 9 页共 9 页http://www.i-core. cn 邮编：214072版本：2012-01-B16、声明及注意事项：6.1、产品中有毒有害物质或元素的名称及含量有毒有害物质或元素部件名称铅（Pb ）汞（Hg ）镉（Cd ）六阶铬（Cr （Ⅵ））多溴联苯（PBBs ）多溴联苯醚（PBDEs ）引线框 ○ ○ ○ ○ ○ ○ 塑封树脂 ○ ○ ○ ○ ○ ○ 芯片 ○ ○ ○ ○ ○ ○ 内引线 ○ ○ ○ ○ ○ ○ 装片胶○○○○○○说明○：表示该有毒有害物质或元素的含量在SJ/T11363-2006标准的检出限以下。

AVT-5841 4x1 Component Video和Analog Digital Audio

Table Of Contents1.0Introduction32.0Specifications43.0Package Contents54.0Connecting the Hardware65.0Operating The Unit76.0Troubleshooting87.0Limited Warranty98.0Regulatory Compliance109.0Contact Information101.0INTRODUCTIONThanks for purchasing this AVT-58414x1 Component Video and Analog/Digital Audio Switcher product from AV Toolbox. The AVT-5841 is designed to provide high quality switching of up to four Video inputs with Stereo Audio. The unit will accept YPbPr Component Video plus Analog Stereo or Digital Stereo Audio. AV Toolbox offers a full line of high quality Standards Converters, Up-Converters, Scan Converters, Distribution Amplifiers, Routing Switchers, Time Base Correctors, PIP Display Devices, Quad Splitters and Video Conditioners. RF Modulators, Digital Audio Converters, LCD Monitors/Receivers and Multimedia Cables round out the product offerings.1.1Liability StatementEvery effort has been made to ensure that this product is free of errors. AV Toolbox cannot be held liable for the use of this hardware or any direct or indirect consequential damages arising from its use. It is the responsibility of the user of the hardware to check that it is suitable for his/her requirements and that it is installed correctly. All rights reserved. No parts of this manual may be reproduced or transmitted by any form or means electronic or mechanical, including photocopying, recording or by any information storage or retrieval system without the written consent of the publisher.AV Toolbox reserves the right to revise any of its hardware and software following its policy to modify and/or improve its products where necessary or desirable. This statement does not affect the legal rights of the user in any way.All third party trademarks and copyrights are recognised.The AV Toolbox Logo, TV One Logo, TV One-Task and CORIO are the registered Trademarks of TV One. All other trademarks are the property of their respective holders.1.2FEATURESThe AVT-58414x1 Component Video and Stereo Audio Switcher has many features that enable it to perform in a superior manner. Among those features you will find:∙Video Inputs: 4x YPbPr∙Video Outputs: 1x YPbPr∙Audio Inputs: 4x Analog and S/PDIF Digital∙Audio Outputs: 1x Analog and S/PDIF Digital∙HDTV Supported to 1080i(YPbPr)2.0SPECIFICATIONSNumber of Cross Points4x1Component, Stereo Analog and Digital Audio Cross Point Selection Front Panel or RemoteHDTV Resolutions SupportedYPbPr480i, 480p, 576i, 576p, 720p, 1080iSignal CapabilityComponent YPbPr, YCbCr(Note 1)Analog Stereo Audio YesDigital S/PDIF)YesVideo Input ConnectorsComponent (YPbPr)4x Sets of 3ea RCAVideo Output ConnectorsComponent (YPbPr)1x Set of 3ea RCAAudio Input ConnectorsAnalog Stereo Audio (R+L)4x Sets of 2ea RCADigital (S/PDIF)4x Coaxial ConnectorsAudio Output ConnectorsAnalog Stereo Audio (R+L)1x Set of 2ea RCADigital (S/PDIF)1x CoaxialControl MethodsManual Front Panel Mounted Push Button Switches Remote Via Included Infrared RemoteTemperature RangeOperating Temperature+32°to 122°F (0°to 50°C)Storage Temperature-4°to 158°F (-20°to 70°C)WarrantyLimited Warranty 1 Year, Parts and LaborPower RequirementsExternal AC Adaptor9VDC/200ma US, UK or EURO AC Plug Regulatory ApprovalsAVT-5841FCC, CEAC Power Adaptor UL, CE, CULAccessories Included1x AC Power Adapter1x Infrared Remote Control1x Instruction ManualNote 1: Inputs and output must be the sameformat, either YPbPr or YCbCr.3.0 CHECKING PACKAGE CONTENTSBefore attempting to use this unit, please check the packaging and make certain the following items are contained in the shipping carton:∙1x AVT-5841 4x1 Component Video/Audio Switcher∙1x AC Power Adapter∙1x Infrared Remote Control∙1x Operations ManualNote:Please retain the original packing material should the need ever arise to return the unit. If you find any items are missing, contact your reseller or AV Toolbox immediately. Have the Model Number, Serial Number and Invoice available for reference when you call.4.0CONNECTING THE HARDWAREPlease study the drawings below and become familiar with the inputs, outputs and control locations on the AVT-5841.AVT-5841Front PanelThe front panel of the AVT-5841contains the product’s control switches. The operation of the switches and meaning of the LED indications will be explained below.AVT-5841Rear PanelOn the rear of the AVT-5841 you’ll find the Power connector,Video in connectors,Stereo Audio connectors, Video out Connectors and Stereo out connectors.The four video and audio inputs are labeled and arranged in logical order from left to right. On the extreme right is the output grouping and the Power Connector.5.0OPERATING THE AVT-5841Using high quality video cables you know to be good, connect Component video signals(YPbPr) to each of the four inputs. (YCbCr inputs are also supported.) Next, connect the output to your monitor or projector.The next step is to connect the Stereo Audio inputs to each input. Connect either Analog Stereo Audio to the RCA connectors or connect Digital S/PDIF Audio to the coaxial connectors. Again, use only high quality, known good cables. Lastly, connect the provided AC Adapter;first to the AVT-5841 and then to the AC power source.5.1 Standard OperationPress the button on the extreme right of the front panel to manually select the desired input. This button is called the SELECT/LEARN switch and the ‘Learn’ function will be explained in a moment.5.2 Remote Control OperationNote:there is no intervention by the AVT-5841 to determine if the selected signal is valid. The unit will route the selected input to the output even if there is no signal present or the selected signal is noisy. (The same is true for the Audio signals).5.2 Using Another Remote Control DeviceYou can use a third party Infrared controller to cause the AVT-5841 to select an input. To do so,it will be necessary to ‘teach’ the AVT-5841 the association you wish to create between the third party remote and a particular input selection. (In other words, you will teach the AVT-5841 to switch to a particular device any time you use the remote control for that device.)Press and hold the ‘LEARN’ button for > 4 seconds. The LED associated with Input 1 will flash. Press a button on the third party remote you wish to beassociated with input 1 –for instance, if your DVD was connected to input 1, you would use the remote for your DVD player. The LED for input 1 will now go off and any time in the future you use your DVD remote, the AVT-5841 willautomatically switch to the input for the DVD. Repeat the procedure with other remotes for the remaining three inputs if you wish to automatically select associated inputs for those inputs.6.0 TroubleshootingMake sure the AVT-5841is connected to a known good monitor and the desired inputs are present. If one input image is acceptable but others are not, you should suspect faulty cables. Swap the cables to determine if the problem moves with the cable(s).Using the included remote control, select thedesired input. If appropriate input signals havebeen connected, you will see the selected inputappear on your monitor or projector.After trying the above suggestions should the problem still persist, contact your dealer for additional suggestions before contacting AV Toolbox’s parent company, TV One. Please contact TV One via our support website:h ttp://. Create a technical support request on the site and our support team will respond within a short period of time.7.0 LIMITED WARRANTYLIMITED WARRANTY–With the exceptions noted in the next paragraph, AV Toolbox warrants the original purchaser that the equipment it manufactures or sells will be free from defects in materials and workmanship for a period of one year from the date of purchase. Should this product, in AV Toolbox’s opinion, prove defective within this warranty period, AV Toolbox, at its option, will repair or replace this product without charge. Any defective parts replaced become the property of AV Toolbox. This warranty does not apply to those products which have been damaged due to accident, unauthorized alterations, improper repair, modifications, inadequate maintenance and care, or use in any manner for which the product was not originally intended.Items integrated into AV Toolbox products that are made by other manufacturers, notably computer hard drives and liquid crystal display panels, are limited to the term of the warranty offered by the respective manufacturers. Such specific warranties are available upon request to AV Toolbox.If repairs are necessary under this warranty policy, the original purchaser must obtain a Return Authorization Number from AV Toolbox and return the product to a location designated by AV Toolbox, freight prepaid. After repairs are complete, the product will be returned, freight prepaid.LIMITATIONS -All products sold are "as is" and the above Limited Warranty is in lieu of all other warranties for this product, expressed or implied, and is strictly limited to one year from the date of purchase. AV Toolbox assumes no liability to distributors, resellers or end-users or any third parties for any loss of use, revenue or profit.AV Toolbox makes no other representation of warranty as to fitness for the purpose or merchantability or otherwise in respect of any of the products sold. The liability of AV Toolbox with respect to any defective products will be limited to the repair or replacement of such products. In no event shall AV Toolbox be responsible or liable for any damage arising from the use of such defective products whether such damages be direct, indirect, consequential or otherwise, and whether such damages are incurred by the reseller, end-user or any third party.8.0REGULATORY COMPLIANCEThe AVT-5841 has been tested for compliance with appropriate FCC and CE rules and regulations. The Power Adaptor/Supplies have been tested for compliance with appropriate UL, CUL, CE, PSE, GS Rules, Regulations and/or Guidelines.These Products and Power Adapters are RoHS Compliant.9.0CONTACT INFORMATIONShould you have questions or require assistance with this product in areas not covered by this manual, please contact TV One at the appropriate location.AV Toolbox USA 2791 Circleport Drive Erlanger, KY 41018 USATel800-235-3280 Tel 859-647-1077 Fax 859-282-8225****************** AV Toolbox Europe Continental Approach Westwood Industrial Estate Margate, Kent CT9 4JG, UK Tel +44 (0)1843 873307Fax +44 (0)1843 873312************************** AV Toolbox Latin America 6991 NW 82nd Avenue #8 Miami, FL 33166USATel305-396-6275Fax 305-418-9306***************************** AV Toolbox Mercosur Av. Diaz Velez 3965 #PB (1200) Capital Federal Buenos Aires, Argentina Tel+54 115917-2525Fax +54 11 4032-0281************************ AV Toolbox Asia16F-4, No.75, Sec.1 Hsin Tai Wu Rd., Hsichih Taipei Hsien 22101 Taiwan R.O.C.Tel+886 2 2698-2296 Fax +886 2 2698-2297 ******************** AV Toolbox ChinaRoom 1007, Golden Peach BuildingNo.1900 Shangcheng RoadPudong, ShanghaiChina 200120Tel +86 21 5830-2960Fax +86 21 5851-7949*********************End of Manual。