TS3USB30ERSWR中文资料

APPLICATIONS
• Routes Signals for USB 1.0, 1.1, and 2.0
(1) High-voltage HBM is performed in addition to the standard HBM testing (A114-B, Class II) and applies to I/O ports tested with respect to GND only.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
(2) All voltages are with respect to ground, unless otherwise specified. (3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed. (4) VI and VO are used to denote specific conditions for VI/O. (5) II and IO are used to denote specific conditions for II/O.
ABSOLUTE MAXIMUM RATINGS(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX UNIT
VCC
Supply voltage range
VIN
Control input voltage range(3)
D1–
RSW PACKAGE (TOP 8 VCC 9
S 10
76 12
5 D– 4 GND 3 D+
D2+
D1+
RSW PACKAGE (BOTTOM VIEW)
D2+
D1+
S 10 VCC 9 OE 8
12 76
3 D+ 4 GND 5 D–
D2–
DESCRIPTION/ORDERING INFORMATION
Operation – D+/D- Pins Tolerate up to 5.25V • ron = 10 Ω Max • Δron = 0.35 Ω Typ • Cio(ON) = 7.5 pF Typ • Low Power Consumption (1 µA Max) • –3dB Bandwidth = 900 MHz Typ • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II • ESD Performance Tested Per JESD 22 – 8000-V Human-Body Model (A114-B,
Tstg
Storage temperature range
Dn+, Dn– D+, D– when VCC > 0 D+, D– when VCC = 0 VIN < 0 VI/O < 0
–0.5
7
V
–0.5
7
V
–0.5 VCC + 0.3
–0.5 VCC + 0.3
V
–0.5
5.25
–50 mA
–50 mA
Class II) – 1000-V Charged-Device Model (C101) • ESD Performance I/O Port to GND (1) – 15000-V Human-Body Model • Packaged in 10-pin TQFN (1.4 mm × 1.8 mm)
TA –40°C to 85°C
ORDERING INFORMATION
PACKAGE (1) (2)
ORDERABLE PART NUMBER
TQFN – RSW
Tape and reel
TS3USB30ERSWR
TOP-SIDE MARKING L6O
(1) Package drawings, thermal data, and symbolization are available at /packaging. (2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
The TS3USB30E integrates ESD protection cells on all pins, is available in a tiny µQFN package (1.8 mm × 1.4 mm) and is charaterized over the free air temperature range from –40°C to 85°C.
H
L
D = D2
BLOCK DIAGRAM
D1+ D+
D2+
D1– D–
D2–
S OE
Control
2
Submit Documentation Feedback
Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TS3USB30E
The TS3USB30E is a high-bandwidth switch specially designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (900 MHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480 Mbps).
ESD PROTECTED, HIGH-SPEED USB 2.0 (480-Mbps) 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH WITH SINGLE ENABLE
FEATURES
1
• VCC Operation at 3 V to 4.3 V • 1.8-V Compatible Control-Pin Inputs • IOFF Supports Partial Power-Down-Mode
Copyright © 2008, Texas Instruments Incorporated
元器件交TS易3U网
SCDS255 – DECEMBER 2008...........................................................................................................................................................................................
VI/O
Switch I/O voltage range(3)(4)
IIK
Control input clamp current
II/OK
I/O port clamp current
II/O
ON-state switch current(5)
Continuous current through VCC or GND
website at .
PIN DESCRIPTION
NAME
DESCRIPTION
OE
Bus-switch enable
S
Select input
D+, D–, Dn+, Dn–
Data ports
TRUTH TABLE
S
OE
FUNCTION
X
H
Disconnect