IXSA20N60B2D1;IXSP20N60B2D1;中文规格书,Datasheet资料
z OS 2.4 ISPF 用户指南 第 1 卷说明书
Chapter 1. Overview of ISPF.................................................................................. 1
Summary of changes for z/OS Version 2 Release 4 (V2R4).................................................................. xxvii Summary of changes for z/OS Version 2 Release 3 (V2R3).................................................................. xxvii Summary of changes for z/OS Version 2 Release 2 (V2R2).................................................................. xxvii
If you have a technical problem............................................................................................................... xxv
Summary of changes........................................................................................ xxvii
IXDP20N60B;IXDP20N60BD1;中文规格书,Datasheet资料
M 4.32 4.82 N 1.14 1.39
Q 0.35 0.56 R 2.29 2.79
Inches Min. Max.
0.500 0.550 0.580 0.630
0.390 0.420 0.139 0.161
0.230 0.270 0.100 0.125
High Voltage IGBT with optional Diode
High Speed, Low Saturation Voltage
IXDP 20N60 B VCES = 600 V
IXDP 20N60 BD1 IC25
= 32 A
V = CE(sat) typ 2.2 V
C
C
TO-220 AB
1-4
/
IXDP 20N60 B IXDP 20N60 BD1
Symbol
Cies C
oes
Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCH
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
easy paralleling q MOS input, voltage controlled q optional ultra fast diode q International standard package
Advantages
q Space savings q High power density
80
RG = 22W
A TJ = 125°C ICM 60
场效应管参数大全
场效应管参数⼤全型号材料管脚⽤途参数3DJ6NJ 低频放⼤ 20V0.35MA0.1W4405/R95242E3C NMOS GDS 开关 600V11A150W0.362SJ117 PMOS GDS ⾳频功放开关 400V2A40W2SJ118 PMOS GDS ⾼速功放开关 140V8A100W50/70nS0.52SJ122 PMOS GDS ⾼速功放开关 60V10A50W60/100nS0.152SJ136 PMOS GDS ⾼速功放开关 60V12A40W 70/165nS0.32SJ143 PMOS GDS 功放开关 60V16A35W90/180nS0.0352SJ172 PMOS GDS 激励 60V10A40W73/275nS0.182SJ175 PMOS GDS 激励 60V10A25W73/275nS0.182SJ177 PMOS GDS 激励 60V20A35W140/580nS0.0852SJ201 PMOS n2SJ306 PMOS GDS 激励 60V14A40W30/120nS0.122SJ312 PMOS GDS 激励 60V14A40W30/120nS0.122SK30 NJ SDG 低放⾳频 50V0.5mA0.1W0.5dB2SK30A NJ SDG 低放低噪⾳频 50V0.3-6.5mA0.1W0.5dB2SK108 NJ SGD ⾳频激励开关 50V1-12mA0.3W70 1DB2SK118 NJ SGD ⾳频话筒放⼤ 50V0.01A0.1W0.5dB2SK168 NJ GSD ⾼频放⼤ 30V0.01A0.2W100MHz1.7dB2SK192 NJ DSG ⾼频低噪放⼤ 18V12-24mA0.2W100MHz1.8dB2SK193 NJ GSD ⾼频低噪放⼤ 20V0.5-8mA0.25W100MHz3dB2SK214 NMOS GSD ⾼频⾼速开关 160V0.5A30W2SK241 NMOS DSG ⾼频放⼤ 20V0.03A0.2W100MHz1.7dB2SK304 NJ GSD ⾳频功放 30V0.6-12mA0.15W2SK385 NMOS GDS ⾼速开关 400V10A120W100/140nS0.62SK386 NMOS GDS ⾼速开关 450V10A120W100/140nS0.72SK413 NMOS GDS ⾼速功放开关 140V8A100W0.5 (2SJ118)2SK423 NMOS SDG ⾼速开关 100V0.5A0.9W4.52SK428 NMOS GDS ⾼速开关 60V10A50W45/65NS0.152SK447 NMOS SDG ⾼速低噪开关 250V15A150W0.24可驱电机2SK511 NMOS SDG ⾼速功放开关 250V0.3A8W5.02SK534 NMOS GDS ⾼速开关 800V5A100W4.02SK539 NMOS GDS 开关 900V5A150W2.52SK560 NMOS GDS ⾼速开关 500V15A100W0.42SK623 NMOS GDS ⾼速开关 250V20A120W0.152SK727 NMOS GDS 电源开关 900V5A125W110/420nS2.52SK734 NMOS GDS 电源开关 450V15A150W160/250nS0.522SK785 NMOS GDS 电源开关 500V20A150W105/240nS0.42SK787 NMOS GDS ⾼速开关 900V8A150W95/240nS1.62SK790 NMOS GDS ⾼速功放开关 500V15A150W0.4 可驱电机2SK791 NMOS GDS 电源功放开关 850V3A100W4.5 可驱电机2SK794 NMOS GDS 电源开关 900V5A150W2.5 可驱电机2SK817 NMOS GDS 电源开关 60V26A35W40/230nS0.0552SK832 NMOS GDS ⾼速开关 900V4A85W55/100nS4.02SK899 NMOS GDS 功放开关 500V18A125W130/440nS0.332SK962 NMOS GDS 电源开关 900V8A150W280/460nS2.02SK940 NMOS SDG 激励.驱动 60V0.8A0.9W0.55螺线管驱动2SK1007 NMOS GDS 功放开关 450V5A60W60/130nS1.62SK1010 NMOS GDS ⾼速开关 500V6A80W70/130nS1.62SK1011 NMOS GDS ⾼速开关 450V10A100W110/240nS0.652SK1012 NMOS GDS ⾼速开关 500V10A100W110/240nS0.92SK1015 NMOS GDS 功放开关 450V18A125W170/230nS0.452SK1016 NMOS GDS 电源开关 500V15A125W170/230nS0.552SK1017 NMOS GDS 电源开关 500V20A150W250/490nS0.352SK1019 NMOS GDS 电源开关 450V35A300W360/900nS0.22SK1020 NMOS GDS 电源开关 500V30A300W360/900nS0.252SK1060 NMOS GDS 功放开关 100V5A20W50/140nS0.272SK1081 NMOS GDS 激励,驱动 800V7A125W 145/250nS2.22SK1082 NMOS GDS 激励,驱动 900V8A125W 145/250nS2.82SK1094 NMOS GDS 激励,驱动 60V15A25W80/300nS0.0652SK1101 NMOS GDS 功放开关 450V10A50W165/360nS0.652SK1117 NMOS GDS 电源开关 600V6A100W1.252SK1118 NMOS GDS 电源开关 600V6A45W65/105nSD1.252SK1119 NMOS GDS 电源开关 1000V4A100W3.82SK1120 NMOS GDS 电源开关 1000V8A150W1.82SK1161 NMOS GDS 电源开关 450V10A100W75/135nS0.82SK1170 NMOS GDS 电源开关 500V20A120W147/290nS0.27 2SK1180 NMOS GDS 投影机⽤ 500V10A85W60/40nS0.62SK1195 NMOS GDS 电梯⽤ 230V1.5A10W37/100nS2SK1198 NMOS GDS ⾼速开关 700V2A35W20/80nS3.22SK1217 NMOS GDS 电源开关 90V8A100W280/460nS2.02SK1221 NMOS GDS 电源开关 250V10A80W60/150nS0.42SK1247 NMOS GDS 电源开关 500V5A30W50/90nS1.42SK1250 NMOS GDS 开关-感性 500V20A150W130/260nS0.35 2SK1254 NMOS GDS 低噪放⼤ 120V3A20W25/195nS0.42SK1271 NMOS GDS 功放开关 1400V5A240W55/260nS4.02SK1272 NMOS GDS ⾼速开关 60V1A0.75W50/500nS0.652SK1329 NMOS GDS 电源开关 500V12A60W90/180nS0.62SK1358 NMOS GDS 电源开关 900V9A150W65/120nS1.42SK1374 NMOS 贴⽚ 50V50mA0.15W0.2US/0.2US502SK1379 NMOS GDS 激励, 开关 60V50A150W78/640nS0.017 2SK1387 NMOS GDS 激励, 开关 60V35A40W66/500nS0.0352SK1388 NMOS GDS 激励, 开关 30V35A60W125/480nS0.022 2SK1419 NMOS GDS ⾼速开关 60V15A25W55/150nS0.082SK1445 NMOS GDS ⾼速开关 450V5A30W45/175nS1.42SK1459 NMOS GDS ⾼速开关 900V2.5A30W40/160nS6.02SK1460 NMOS GDS ⾼速开关 900V3.5A40W50/265nS3.62SK1463 NMOS GDS ⾼速开关 900V4.5A60W50/265nS3.62SK1482 NMOS GDS 开关功放低噪 30V1.5A0.75W65/660nS4.5 2SK1507 NMOS GDS ⾼速开关 600V9A50W110/240nS1.02SK1535 NMOS GDS 通⽤ 900V3A30W45/110nS5.02SK1537 NMOS GDS 通⽤ 900V5A100W65/145nS3.02SK1540 NMOS GDS 变频开关功放 450V7A60W70/135nS0.82SK1544 NMOS GDS 变频开关功放 500V25A200W240/590S0.2 2SK1547 NMOS GDS 开关 800V4A40W95/170nS4.52SK1567 NMOS GDS 电源开关 500V7A35W70/135nS0.92SK1611 NMOS GDS 电源开关 800V3A50W40/135nS4.02SK1681 NMOS GDS 电源开关 500V30A300W180/320nS0.35 2SK1745 NMOS GDS 激励, 开关 500V18A150W120/210nS0.36 2SK1794 NMOS GDS 电源激励开关 900V6A100W50/105nS2.8 2SK1796 NMOS GDS 功放开关 900V10A150W90/230nS1.22SK1850 NMOS GDS 开关电机驱动 60V10A1.8W110/360nS0.07 2SK1916 NMOS GDS 开关电源⽤ 450V18A80W170/33nS0.452SK1937 NMOS GDS 开关UPS⽤ 500V15A125W100/230nS0.48 2SK1985 NMOS GDS 开关UPS⽤ 900V5A50W35/105nS2.82SK2039 NMOS GDS 电源开关 900V5A150W 70/210nS2.52SK2040 NMOS GDS 电源开关 600V2A20W 11/45nS52SK2082 NMOS GDS 开关UPS⽤ 900V9A150W 85/210nS1.40 2SK2101 NMOS GDS 电源开关 800V6A50W 50/130nS2.12SK2141 NMOS GDS 传动驱动 600V6A35W 30/880nS1.12SK2147 NMOS GDS 开关UPS⽤ 900V6A80W 145/250nS2.82SK2161 NMOS SDG ⾼速开关 200V9A25W 27/255nS0.452SK2189 NMOS GDS ⾼速开关 500V10A70W 70/400nS1.02SK2485 NMOS GDS 监视器⽤电源 900V6A100W 30/85 nS 2.80 2SK2487 NMOS GDS 监视器⽤电源 900V8A140W 50/153nS1.1 2SK2611 NMOS GDS 监视器⽤电源 900V9A150W2SK2645 NMOS GDS 监视器⽤电源 500V15A125W2SK4847 NMOS GDS 电源开关 100V36125W0.083SK103 NMOS gGDS ⾼频放⼤ 15V0.02A0.2W900MHz3SK122 NMOS gGDS ⾼频放⼤ 20V7-25mA0.2W200MHz1.2dBBS170 NMOS 60V0.3A0.63W12/12nS5.0BUZ11A NMOS GDS 开关 50V25A75W60/110nS0.055BUZ20 NMOS GDS 功放开关 100V12A75W75/80nSFS3KM NMOS GDS ⾼速开关 500V3A30W23/60nS4.4FS5KM NMOS GDS ⾼速开关 900V3A53W50/190nS4.FS7KM NMOS GDS ⾼速开关 900V5A50W35/105nS2.8FS10KM NMOS GDS ⾼速开关FS12KM NMOS GDS ⾼速开关 250V12A35W53/120nS0.40 FS7SM-16 NMOS GDS ⾼速开关 800V7A150W1.6H120N60 NMOS GDS 开关 600V120AIRF130(铁)NMOS GDS 功放开关 100V14A79W75/45nS0.16 IRF230(铁)NMOS GDS 功放开关 200V9A75W50/40nS0.4 IRF250(铁)NMOS GDS 功放开关 200V9A75W50/40nS0.4 IRF440(铁)NMOS GDS 功放开关 500V8A125W35/30nS0.85 IRF450(铁)NMOS GDS 功放开关 500V13A125W66/60nS0.4 IRF460(铁)NMOS GDS 功放开关 500V13A125W66/60nS0.4 IRF530 NMOS GDS 功放开关 100V14A79W51/36nS0.18IRF540 NMOS GDS 功放开关 100V28A150W110/75nS0.077 IRF541 NMOS GDS 功放开关 80V28A150W110/75nS0.077 IRF610 NMOS GDS 功放开关 200V3.3A43W26/13nS1.5IRF630 NMOS GDS 功放开关 200V9A75W50/40nS0.4IRF640 NMOS GDS 功放开关 200V18A125W77/54nS0.18 IRF720 NMOS GDS 功放开关 400V3.3A50W21/20nS1.8IRF730 NMOS GDS 功放开关 400V5.5A75W29/24nS1.0IRF740 NMOS GDS 功放开关 400V10A125W41/36nS0.55 IRF830 NMOS GDS 功放开关 500V4.5A75W23/23nS1.5IRF840 NMOS GDS 功放开关 500V8A125W35/33nS0.85IRF9530 PMOS GDS 功放开关 100V12A75W140/140nS0.4 IRF9531 PMOS GDS 功放开关 60V12A75W140/140S0.3IRF9541 PMOS GDS 功放开关 60V19A125W140/141nS0.2 IRF9610 PMOS GDS 功放开关 200V1A20W25/15nS2.3IRF9630 PMOS GDS 功放开关 200V6.5A75W100/80nS0.8 IRFS9630 PMOS GDS 功放开关 200V6.5A75W100/80nS0.8 IRFBC20 NMOS GDS 功放开关 600V2.2A50W15/30nS4.4 IRFBC30 NMOS GDS 功放开关 600V3.6A74W20/21nS2.2 IRFBC40 NMOS GDS 功放开关 600V6.2A125W27/30nS1.2 IRFBE30 NMOS GDS 功放开关 800V2.8A75W15/30nS3.5 IRFD120 NMOS 功放开关 100V1.3A1W70/70nS0.3IRFD123 NMOS 功放开关 80V1.1A1W70/70nS0.3IRFI730 NMOS GDS 功放开关 400V4A32W1.0IRFI744 NMOS GDS 功放开关 400V4A32W1.0IRFP054 NMOS GDS 功放开关 60V65A180W0.022IRFP140 NMOS GDS 功放开关 100V29150W0.85IRFP150 NMOS GDS 功放开关 100V40A180W210/140nS0.55 IRFP240 NMOS GDS 功放开关 200V19A150W0.18IRFP250 NMOS GDS 功放开关 200V33A180W180/120nS0.08 IRFP340 NMOS GDS 功放开关 400V10A150W0.55IRFP350 NMOS GDS 功放开关 400V16A180W77/71nS0.3 IRFP353 NMOS GDS 功放开关 350V14A180W77/71XnS0.4 IRFP360 NMOS GDS 功放开关 400V23A250W140/99nS0.2 IRFP440 NMOS GDS 功放开关 500V8.1A150W0.85IRFP450 NMOS GDS 功放开关 500V14A180W66/60nS0.4 IRFP460 NMOS GDS 功放开关 500V20A250W120/98nS0.27 IRFP9140 PMOS GDS 功放开关 100V19A150W100/70nS0.2 IRFP9150 PMOS GDS 功放开关 100V25A150W160/70nS0.2 IRFP9240 PMOS GDS 功放开关 200V12A150W68/57nS0.5 IRFPF40 NMOS GDS 功放开关 900V4.7A150W2.5IRFPG42 NMOS GDS 功放开关 1000V3.9A150W4.2IRFPZ44 NMOS GDS 功放开关 1000V3.9A150W4.2 ******* IRFU020 NMOS GDS 功放开关 50V15A42W83/39nS0.1 IXGH20N60ANMOS GDS 600V20A150WIXGFH26N50NMOS GDS 500V26A300W0.3IXGH30N60ANMOS GDS 600V30A200WIXGH60N60ANMOS GDS 600V60A250WIXTP2P50 PMOS GDS 功放开关 500V2A75W5.5 代J117J177 PMOS SDG 开关 30V1.5mA0.35WM75N06 NMOS GDS ⾳频功放开关 60V75A120WMTH8N100 NMOS GDS 功放开关 1000V8A180W175/180nS1.8 MTH10N80 NMOS GDS 功放开关 800V10A150WMTM30N50 NMOS 功放开关 (铁)500V30A250WMTM55N10 NMOS GDS 功放开关 (铁)100V55A250W350/400nS0.04 MTP27N10 NMOS GDS 功放开关 100V27A125W0.05MTP2955 PMOS GDS 功放开关 60V12A75W75/50nS0.3MTP3055 NMOS GDS 功放开关 60V12A75W75/50nS0.3MTP40N06 NMOS GDS 功放开关 (双)60V40A150W/70nS0.3MTW20N50 NMOS GDS 功放开关 500V20A250W0.27RFP40N10 NMOS GDS 功放开关 100V40A160W30/20nS0.04RFP50N05 NMOS GDS 功放开关 50V50A132W55/15nS0.022RFP50N06 NMOS GDS 功放开关 60V50A145W55/15nS0.022RFP6N60 NMOS GDS 功放开关 600V6A75W80/100nS1.50RFP60N06 NMOS GDS 功放开关 60V60A120W50/15nS0.03RFP70N06 NMOS GDS 功放开关 60V70A150WSMP50N06 NMOS GDS 功放开关 50V60A125W50nS0.026SMP60N06 NMOS GDS 功放开关 60V60A125W50nS0.023SMW11N20 NMOS GDS 功放开关 200V11A150WSMW11P20 PMOS GDS 功放开关 200V11A150WSMW20N10 NMOS GDS 功放开关 100V20A150WSMW20N10 PMOS GDS 功放开关 100V20A150WSSH7N90 NMOS GDS ⾼速电源开关 900V7A150WSSP6N60 NMOS GDS ⾼速电源开关 600V6A150WSSP5N90 NMOS GDS ⾼速电源开关 900V5A125WSSP7N80 NMOS GDS ⾼速电源开关 800V7A75WSUP75N06 NMOS GDS 功放开关 60V75A125W0.05W12NA50W NMOS GDS 功放开关 50V12A150W300/600nSGT15Q101 NMOS GDS IGBT 1400V15A150WGT25J101 NMOS GDS IGBT 800V25A150WGT25Q101 NMOS GDS IGBT 1400V25A180WGT40T101 NMOS GDS IGBT 1500V40A300WGT60M103 NMOS GDS IGBT 900V60A300WGT60M301 NMOS GDS IGBT 900V60A300WIMBH60 NMOS GDS-100 IGBT 1000V60A300WIMBH60D NMOS GDS-100 IGBT 1000V60A300W(带阻)SDT3055 NMOS GDSTSD45N50V NMOS 场效应模块 500V45A400WTN2460L35N120 1200V35A250WEXB841 IGBT驱动。
20n60
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 600 V 600 V
ID25 15 A 20 A
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 15N60 20N60 15N60 20N60 15 20 60 80 1.5 250 400 1 2 10 15 A A A A V ns ns mC mC A A
ID = 10A
ID - Amperes
TJ - Degrees C
Fig. 5 Drain Current vs. Case Temperature
35 30
Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage
1.2
VGS(th)
91526E (4/99)
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.0 4.5 ±100 TJ = 25°C TJ = 125°C 250 1 0.50 0.35 V V nA mA mA W W
J K L M N
1.5 2.49
TO-204 AE (IXFM) Outline
IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C
IXYS SEMICONDUCTOR IXKC 20N60C 说明书
© 2004 IXYS All rights reservedSymbol Test Conditions Maximum Ratings V DSS T J = 25°C to 150°C 600VV GS Continuous ±20V I D25T C = 25°C; Note 1 14A I D90T C = 90°C, Note 1 10A I D(RMS)Package lead current limit 45A E AS I o = 10A, T C = 25°C 690mJ E AR I o= 20A1mJ P D T C = 25°C125W T J -55 ... +150°C T JM 150°C T stg -55 ... +125°C T L 1.6 mm (0.062 in.) from case for 10 s 300°C V ISOLRMS leads-to-tab, 50/60 Hz, t = 1 minute 2500V~F C Mounting force11 ... 65 / 2.4 ...11N/lbWeight3gSymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.R DS(on)V GS = 10 V, I D = I D90, Note 3160190m ΩV GS = 10 V, I D = I D90, Note 3T J = 125°C 463m ΩV GS(th)V DS = V GS , I D = 1 mA 3.55.5V I DSS V DS = V DSS T J = 25°C 1µA V GS = 0 VT J = 125°C10µA I GSSV GS = ±20 V DC , V DS = 0±100nAG = Gate, D = Drain,S = Source * Patent pendingV DSS =600 V I D25= 14 A R DS(on)=190 m ΩDS98848C(1/04)FeatureszSilicon chip on Direct-Copper-Bond substrate- High power dissipation - Isolated mounting surface - 2500V electrical isolationz 3RD generation CoolMOS power MOSFET - High blocking capability - Low on resistance- Avalanche rated for unclamped inductive switching (UIS)z Low thermal resistance due to reduced chip thicknessz Low drain to tab capacitance(<30pF)ApplicationszSwitched Mode Power Supplies (SMPS)z Uninterruptible Power Supplies (UPS)z Power Factor Correction (PFC)z Weldingz Inductive HeatingAdvantagesz Easy assembly: no screws or isolation foils required z Space savings zHigh power densityCoolMOS TM Power MOSFET in ISOPLUS220TM PackageElectrically Isolated Back SurfaceN-Channel Enhancement Mode Low R DS(on), Superjunction MOSFET IXKC 20N60C CooLMOS is a trademark of Infineon Technologies, AGGDSISOPLUS 220LV TMIsolated back surface* E 153432Preliminary Data SheetIXYS reserves the right to change limits, test conditions, and dimensions.IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343Symbol Test ConditionsQg(on)Qgs VGS= 10 V, VQgdd(on)VGS= 10 V, V。
KGF20N60KDA TO-247规格书 KEC推荐
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CHARACTERISTIC Diode Forward Voltage SYMBOL VF IF = 20A TEST CONDITION TC=25 TC=125 Diode Reverse Recovery Time trr VCC = 300V Diode Peak Reverse Recovery Current Irr IF = 20A di/dt = 600A/ s Diode Reverse Recovery Charge Qrr TC=125 0.85 TC=125 TC=25 13 0.5 C TC=25 TC=125 TC=25 MIN. TYP. 1.65 1.7 70 105 12 MAX. 2.5 V ns A UNIT
Note 1 : Energy loss include tail current and diode reverse recovery.
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ELECTRICAL CHARACTERISTIC OF DIODE
NCE20N60T data sheet 规格书
NCE N-Channel Enhancement Mode Power MOSFETV DS @T jmax 650 V R DS(ON)190m ΩI D 20 AGeneral DescriptionThe series of devices use advanced super junction technology and design to provide excellent R DS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.Features●New technology for high voltage device ●Low on-resistance and low conduction losses●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche TestedApplication● Power factor correction （PFC ） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply （UPS ）Package Marking And Ordering InformationDeviceDevice PackageMarkingNCE20N60T TO-247 NCE20N60Table 1.Absolute Maximum Ratings (TC =25℃)Parameter Symbol NCE20N60T UnitDrain-Source Voltage (V GS=0V ） V DS600 V Gate-Source Voltage (V DS=0V) V GS±30 V Continuous Drain Current at Tc=25°C I D (DC) 20 A Continuous Drain Current at Tc=100°C I D (DC)12.5 A Pulsed drain current (Note 1)I DM (pluse) 60 A Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj = 125 °Cdv/dt 50 V/nsMaximum Power Dissipation(Tc=25℃) Derate above 25°CP D208 1.67 WW/°CSingle pulse avalanche energy (Note 2)E AS 690mJAvalanche current(Note 1)I AR20 ASchematic diagramTO-247Parameter Symbol NCE20N60T UnitRepetitive Avalanche energy ，t AR limited by T jmax(Note 1)E AR 1 mJ Operating Junction and Storage Temperature Range T J ,T STG-55...+150 °C * limited by maximum junction temperatureTable 2. Thermal CharacteristicParameter Symbol NCE20N60T UnitThermal Resistance ，Junction-to-Case （Maximum ） R thJC 0.6 °C /WThermal Resistance ，Junction-to-Ambient （Maximum ）R thJA62 °C /WTable 3. Electrical Characteristics (TA=25℃unless otherwise noted)Parameter Symbol ConditionMin Typ Max UnitOn/off statesDrain-Source Breakdown VoltageBV DSSV GS =0V I D =250μA 600 V Zero Gate Voltage Drain Current(Tc=25℃) I DSS V DS =600V,V GS =0V 0.05 1 μAZero Gate Voltage Drain Current(Tc=125℃) I DSS V DS =600V,V GS =0V 100 μA Gate-Body Leakage Current I GSS V GS =±30V,V DS =0V ±100nA Gate Threshold VoltageV GS(th) V DS =V GS ,I D =250μA 2.5 3 3.5 V Drain-Source On-State Resistance R DS(ON)V GS =10V, I D =10A 155 190 m ΩDynamic CharacteristicsForward Transconductance g FS V DS = 20V, I D = 10A17.5SInput Capacitance C lss 2300 PF Output CapacitanceC oss 95 PFReverse Transfer Capacitance C rssV DS =100V,V GS =0V,F=1.0MHz7 PF Total Gate Charge Q g 55 114 nCGate-Source Charge Q gs 11 nCGate-Drain Charge Q gdV DS =480V,I D =20A,V GS =10V22 nC Switching timesTurn-on Delay Time t d(on) 10 nSTurn-on Rise Time t r 5 nS Turn-Off Delay Time t d(off) 67 100 nSTurn-Off Fall Timet fV DD =380V,I D =20A, R G =3.6Ω,V GS =10V 4 12 nSSource- Drain Diode CharacteristicsSource-drain current(Body Diode) I SD 20 APulsed Source-drain current(Body Diode) I SDM T C =25°C60 A Forward on voltage V SD Tj =25°C,I SD =20A,V GS =0V 0.9 1.3 VReverse Recovery Time t rr 500 nSReverse Recovery ChargeQ rr Tj=25°C,I F =20A,di/dt=100A/μs11 uCNotes 1.Repetitive Rating: Pulse width limited by maximum junction temperature2. Tj=25℃,VDD=50V,VG=10V, R G =25ΩTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves) Figure1. Safe operating area for NCE20N60T Figure2. Source-Drain Diode Forward VoltageFigure3. Output characteristics Figure4. Transfer characteristicsFigure5. Static drain-source on resistance Figure6. R DS(ON) vs Junction TemperatureFigure7. BV DSS vs Junction Temperature Figure8. Maximum I D vs Junction TemperatureFigure9. Gate charge waveforms Figure10. CapacitanceFigure11. Transient Thermal ImpedanceTest circuit1） Gate charge test circuit & Waveform2）Switch Time Test Circuit：3）Unclamped Inductive Switching Test Circuit & WaveformsTO-247 Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.850 5.150 0.191 0.200A1 2.200 2.600 0.087 0.102b 1.000 1.400 0.039 0.055b1 2.800 3.200 0.110 0.126 b2 1.800 2.200 0.071 0.087c 0.500 0.700 0.020 0.028c1 1.900 2.100 0.075 0.083D 15.45015.750 0.608 0.620E1 3.500 REF 0.138 REFE2 3.600 REF 0.142 REF41.300 1.610 1.626L 40.900L1 24.800 25.100 0.976 0.988 L2 20.300 20.600 0.799 0.811 Φ7.100 7.300 0.280 0.287e 5.450 TYP 0.215 TYPH 5.980 REF 0.235 REFPb-Free ProductATTENTION:■ Any and all NCE products described or contained herein do not have specifications that can handle applications that requireextremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE representative nearest you before using any NCE products described or contained herein in such applications.■ NCE assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE products described or contained herein.■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics, andfunctions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.■ NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.■ In the event that any or all NCE products(including technical data, services) described or contained herein are controlledunder any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, includingphotocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE Power Semiconductor CO.,LTD.■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volumeproduction. NCE believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.■ Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE product that you intend to use.■ This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without notice.。
IXSH35N120A;中文规格书,Datasheet资料
1250
18
TJ = 125°C
IC = 35A
1000
17
tfi
750
16
Eoff - millijoules tfi - nanoseconds
500
10
Eoff
250 0
5 10 20 30 40 50 60 70
IC - Amperes
Fig.9 Gate Charge Characteristic Curve
W RG = 2.7
dV/dt < 5V/ns
1
0.1
0.01 0
200 400 600 800 1000 1200 VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
0.1 D=0.2 D=0.1
D=0.05 D=0.02 0.01 D=0.01
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
70
A
35
A
140
A
ICM = 70
A
@ 0.8 VCES
10
ms
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Symbol
BVCES V
GE(th)
I
CES
10
9
TJ = 25°C
8
7
6
5
IC = 70A
ATTINY20-SSUR;中文规格书,Datasheet资料
Features•High Performance, Low Power AVR® 8-bit Microcontroller •Advanced RISC Architecture–112 Powerful Instructions – Most Single Clock Cycle Execution –16 x 8 General Purpose Working Registers–Fully Static Operation–Up to 12 MIPS Throughput at 12 MHz•Non-volatile Program and Data Memories–2K Bytes of In-System Programmable Flash Program Memory–128 Bytes Internal SRAM–Flash Write/Erase Cycles: 10,000–Data Retention: 20 Years at 85o C / 100 Years at 25o C•Peripheral Features–One 8-bit Timer/Counter with Two PWM Channels–One 16-bit Timer/Counter with Two PWM Channels–10-bit Analog to Digital Converter•8 Single-ended Channels–Programmable Watchdog Timer with Separate On-chip Oscillator–On-chip Analog Comparator–Master/Slave SPI Serial Interface–Slave TWI Serial Interface•Special Microcontroller Features–In-System Programmable–External and Internal Interrupt Sources–Low Power Idle, ADC Noise Reduction, Stand-by and Power-down Modes –Enhanced Power-on Reset Circuit–Internal Calibrated Oscillator•I/O and Packages–14-pin SOIC/TSSOP: 12 Programmable I/O Lines–15-ball UFBGA: 12 Programmable I/O Lines–20-pad VQFN: 12 Programmable I/O Lines•Operating Voltage:–1.8 – 5.5V•Programming Voltage:–5V•Speed Grade–0 – 4 MHz @ 1.8 – 5.5V–0 – 8 MHz @ 2.7 – 5.5V–0 – 12 MHz @ 4.5 – 5.5V•Industrial Temperature Range•Low Power Consumption–Active Mode:•200 µA at 1 MHz and 1.8V–Idle Mode:•25 µA at 1 MHz and 1.8V–Power-down Mode:•< 0.1 µA at 1.8V 8-bit Microcontrollerwith 2K BytesIn-System ProgrammableATtiny20Summary28235CS–AVR–06/12ATtiny201.Pin ConfigurationsFigure 1-1.Pinout of ATtiny201.1Pin Description1.1.1VCCSupply voltage.1.1.2GNDGround.Table 1-1.Pinout ATtiny20 in UFBGA.1234A PA5PA6PB2B PA4PA7PB1PB3C PA3PA2PA1PB0DPA0GNDGNDVCC1234567141312111098VCC(PCINT8/TPICLK/T0/CLKI) PB0(PCINT9/TPIDATA/MOSI/SDA/OC1A) PB1(PCINT11/RESET) PB3(PCINT10/INT0/MISO/OC1B/OC0A/CKOUT) PB2(PCINT7/SCL/SCK/T1/ICP1/OC0B/ADC7) PA7(PCINT6/SS/ADC6) PA6GNDPA0 (ADC0/PCINT0)PA1 (ADC1/AIN0/PCINT1)PA2 (ADC2/AIN1/PCINT2)PA3 (ADC3/PCINT3)PA4 (ADC4/PCINT4)PA5 (ADC5/PCINT5)SOIC/TSSOP12345VQFN15141312112019181716678910NOTEBottom pad should be soldered to ground.DNC: Do Not ConnectD N C D N C G N D V C C D N C PA7 (ADC7/OC0B/ICP1/T1/SCL/SCK/PCINT7)PB2 (CKOUT/OC0A/OC1B/MISO/INT0/PCINT10)PB3 (RESET/PCINT11)PB1 (OC1A/SDA/MOSI/TPIDATA/PCINT9)PB0 (CLKI/T0/TPICLK/PCINT8)D N C D N C D N C P A 5P A 6Pin 16: PA6 (ADC6/SS/PCINT6)Pin 17: PA5 (ADC5/PCINT5)(PCINT4/ADC4) PA4(PCINT3/ADC3) PA3(PCINT2/AIN1/ADC2) PA2(PCINT1/AIN0/ADC1) PA1(PCINT0/ADC0) PA038235CS–AVR–06/12ATtiny201.1.3RESETReset input. A low level on this pin for longer than the minimum pulse length will generate a reset, even if the clock is not running and provided the reset pin has not been disabled. The min-imum pulse length is given in Table 20-4 on page 175. Shorter pulses are not guaranteed to generate a reset.The reset pin can also be used as a (weak) I/O pin.1.1.4Port A (PA7:PA0)Port A is a 8-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port A output buffers have symmetrical drive characteristics with both high sink and source capability. As inputs, Port A pins that are externally pulled low will source current if the pull-up resistors are activated. The Port A pins are tri-stated when a reset condition becomes active,even if the clock is not running.Port A has alternate functions as analog inputs for the ADC, analog comparator and pin change interrupt as described in “Alternate Port Functions” on page 49.1.1.5Port B (PB3:PB0)Port B is a 4-bit bi-directional I/O port with internal pull-up resistors (selected for each bit). The Port B output buffers have symmetrical drive characteristics with both high sink and source capability except PB3 which has the RESET capability. To use pin PB3 as an I/O pin, instead of RESET pin, program (‘0’) RSTDISBL fuse. As inputs, Port B pins that are externally pulled low will source current if the pull-up resistors are activated. The Port B pins are tri-stated when a reset condition becomes active, even if the clock is not running.The port also serves the functions of various special features of the ATtiny20, as listed on page 39.48235CS–AVR–06/12ATtiny202.OverviewATtiny20 is a low-power CMOS 8-bit microcontroller based on the compact AVR enhanced RISC architecture. By executing powerful instructions in a single clock cycle, the ATtiny20achieves throughputs approaching 1 MIPS per MHz allowing the system designer to optimize power consumption versus processing speed.Figure 2-1.Block DiagramThe AVR core combines a rich instruction set with 16 general purpose working registers and system registers. All registers are directly connected to the Arithmetic Logic Unit (ALU), allowing two independent registers to be accessed in one single instruction executed in one clock cycle.58235CS–AVR–06/12ATtiny20The resulting architecture is compact and code efficient while achieving throughputs up to ten times faster than conventional CISC microcontrollers.ATtiny20 provides the following features:•2K bytes of in-system programmable Flash •128 bytes of SRAM•Twelve general purpose I/O lines •16 general purpose working registers•An 8-bit Timer/Counter with two PWM channels •A 16-bit Timer/Counter with two PWM channels •Internal and external interrupts •An eight-channel, 10-bit ADC•A programmable Watchdog Timer with internal oscillator •A slave two-wire interface•A master/slave serial peripheral interface •An internal calibrated oscillator•Four software selectable power saving modesThe device includes the following modes for saving power:•Idle mode: stops the CPU while allowing the timer/counter, ADC, analog comparator, SPI, TWI, and interrupt system to continue functioning•ADC Noise Reduction mode: minimizes switching noise during ADC conversions by stopping the CPU and all I/O modules except the ADC•Power-down mode: registers keep their contents and all chip functions are disabled until the next interrupt or hardware reset•Standby mode: the oscillator is running while the rest of the device is sleeping, allowing very fast start-up combined with low power consumption.The device is manufactured using Atmel’s high density non-volatile memory technology. The on-chip, in-system programmable Flash allows program memory to be re-programmed in-system by a conventional, non-volatile memory programmer.The ATtiny20 AVR is supported by a suite of program and system development tools, including macro assemblers and evaluation kits.68235CS–AVR–06/12ATtiny203.General Information3.1ResourcesA comprehensive set of drivers, application notes, data sheets and descriptions on development tools are available for download at /avr.3.2Code ExamplesThis documentation contains simple code examples that briefly show how to use various parts of the device. These code examples assume that the part specific header file is included before compilation. Be aware that not all C compiler vendors include bit definitions in the header files and interrupt handling in C is compiler dependent. Please confirm with the C compiler documen-tation for more details.3.3Capacitive Touch SensingAtmel QTouch Library provides a simple to use solution for touch sensitive interfaces on Atmel AVR microcontrollers. The QTouch Library includes support for QTouch ® and QMatrix ® acquisi-tion methods.Touch sensing is easily added to any application by linking the QTouch Library and using the Application Programming Interface (API) of the library to define the touch channels and sensors.The application then calls the API to retrieve channel information and determine the state of the touch sensor.The QTouch Library is free and can be downloaded from the Atmel website. For more informa-tion and details of implementation, refer to the QTouch Library User Guide – also available from the Atmel website.3.4Data RetentionReliability Qualification results show that the projected data retention failure rate is much less than 1 PPM over 20 years at 85°C or 100 years at 25°C.3.5DisclaimerTypical values contained in this datasheet are based on simulations and characterization of other AVR microcontrollers manufactured on the same process technology.78235CS–AVR–06/12ATtiny204.Register SummaryAddressNameBit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0Page0x3F SREG ITHSVNZCPage 140x3E SPH Stack Pointer High Byte Page 130x3D SPL Stack Pointer Low Byte Page 130x3C CCP CPU Change Protection BytePage 130x3B RSTFLR ––––WDRF BORF EXTRF PORF Page 370x3A MCUCR ICSC01ICSC00–BODS SM2SM1SM0SE Pages 28, 410x39OSCCAL Oscillator Calibration BytePage 230x38Reserved ––––––––0x37CLKMSR ––––––CLKMS1CLKMS0Page 220x36CLKPSR ––––CLKPS3CLKPS2CLKPS1CLKPS0Page 220x35PRR –––PRTWIPRSPIPRTIM1PRTIM0PRADCPage 290x34QTCSR QTouch Control and Status RegisterPage 60x33NVMCMD ––NVM Command Page 1700x32NVMCSR NVMBSY –––––––Page 1710x31WDTCSR WDIF WDIE WDP3–WDE WDP2WDP1WDP0Page 350x30SPCR SPIE SPE DORD MSTR CPOL CPHA SPR1SPR0Page 1350x2F SPSR SPIF WCOL ––––SSPS SPI2X Page 1370x2E SPDR SPI Data RegisterPage 1370x2D TWSCRA TWSHE–TWDIE TWASIETWEN TWSIE TWPME TWSME Page 1460x2C TWSCRB –––––TWAA TWCMD[1.0]Page 1470x2B TWSSRA TWDIFTWASIFTWCHTWRATWCTWBETWDIRTWASPage 1480x2A TWSA TWI Slave Address Register Page 1500x29TWSAM TWI Slave Address Mask RegisterPage 1510x28TWSD TWI Slave Data RegisterPage 1500x27GTCCR TSM ––––––PSR Page 1070x26TIMSK ICE1–OCIE1B OCIE1A TOIE1OCIE0B OCIE0A TOIE0Pages 76, 1030x25TIFR ICF1–OCF1B OCF1A TOV1OCF0B OCF0A TOV0Pages 76, 1040x24TCCR1A COM1A1COM1A0COM1B1COM1B0––WGM11WGM10Page 990x23TCCR1B ICNC1ICES1–WGM13WGM12CS12CS11CS10Page 1010x22TCCR1C FOC1AFOC1B––––––Page 1020x21TCNT1H Timer/Counter1 – Counter Register High Byte Page 1020x20TCNT1L Timer/Counter1 – Counter Register Low Byte Page 1020x1F OCR1AH Timer/Counter1 – Compare Register A High Byte Page 1030x1E OCR1AL Timer/Counter1 – Compare Register A Low Byte Page 1030x1D OCR1BH Timer/Counter1 – Compare Register B High Byte Page 1030x1C OCR1BL Timer/Counter1 – Compare Register B Low Byte Page 1030x1B ICR1H Timer/Counter1 - Input Capture Register High Byte Page 1030x1A ICR1L Timer/Counter1 - Input Capture Register Low BytePage 1030x19TCCR0A COM0A1COM0A0COM0B1COM0B0––WGM01WGM00Page 710x18TCCR0B FOC0AFOC0B––WGM02CS02CS01CS00Page 740x17TCNT0Timer/Counter0 – Counter Register Page 750x16OCR0A Timer/Counter0 – Compare Register A Page 750x15OCR0B Timer/Counter0 – Compare Register BPage 760x14ACSRA ACD ACBG ACO ACI ACIE ACIC ACIS1ACIS0Page 1090x13ACSRB HSEL HLEV ACLP –ACCE ACME ACIRS1ACIRS0Page 1100x12ADCSRA ADEN ADSC ADATE ADIF ADIE ADPS2ADPS1ADPS0Page 1260x11ADCSRB VDEN VDPD ––ADLAR ADTS2ADTS1ADTS0Page 1270x10ADMUX –REFSREFENADC0ENMUX3MUX2MUX1MUX0Page 1240x0F ADCH ADC Conversion Result – High Byte Page 1250x0E ADCL ADC Conversion Result – Low BytePage 1250x0D DIDR0ADC7D ADC6D ADC5D ADC4D ADC3D ADC2D ADC1D ADC0D Page 1280x0C GIMSK ––PCIE1PCIE0–––INT0Page 410x0B GIFR ––PCIF1PCIF0–––INTF0Page 420x0A PCMSK1––––PCINT11PCINT10PCINT9PCINT8Page 430x09PCMSK0PCINT7PCINT6PCINT5PCINT4PCINT3PCINT2PCINT1PCINT0Page 430x08PORTCR ––––––BBMB BBMA Page 580x07PUEB ––––PUEB3PUEB2PUEB1PUEB0Page 580x06PORTB ––––PORTB3PORTB2PORTB1PORTB0Page 590x05DDRB ––––DDRB3DDRB2DDRB1DDRB0Page 590x04PINB ––––PINB3PINB2PINB1PINB0Page 590x03PUEA PUEA7PUEA6PUEA5PUEA4PUEA3PUEA2PUEA1PUEA0Page 580x02PORTA PORTA7PORTA6PORTA5PORTA4PORTA3PORTA2PORTA1PORTA0Page 580x01DDRA DDRA7DDRA6DDRA5DDRA4DDRA3DDRA2DDRA1DDRA0Page 580x00PINAPINA7PINA6PINA5PINA4PINA3PINA2PINA1PINA0Page 5888235CS–AVR–06/12ATtiny20Note:1.For compatibility with future devices, reserved bits should be written to zero if accessed. Reserved I/O memory addressesshould never be written.2.I/O Registers within the address range 0x00 - 0x1F are directly bit-accessible using the SBI and CBI instructions. In theseregisters, the value of single bits can be checked by using the SBIS and SBIC instructions.3.Some of the Status Flags are cleared by writing a logical one to them. Note that, unlike most other AVRs, the CBI and SBIinstructions will only operation the specified bit, and can therefore be used on registers containing such Status Flags. The CBI and SBI instructions work with registers 0x00 to 0x1F only.98235CS–AVR–06/12ATtiny205.Instruction Set SummaryMnemonicsOperandsDescriptionOperation Flags#ClocksARITHMETIC AND LOGIC INSTRUCTIONSADD Rd, Rr Add without Carry Rd ← Rd + RrZ,C,N,V,S,H 1ADC Rd, Rr Add with Carry Rd ← Rd + Rr + C Z,C,N,V,S,H 1SUB Rd, Rr Subtract without Carry Rd ← Rd - Rr Z,C,N,V,S,H 1SUBI Rd, K Subtract Immediate Rd ← Rd - K Z,C,N,V,S,H 1SBC Rd, Rr Subtract with CarryRd ← Rd - Rr - C Z,C,N,V,S,H 1SBCI Rd, K Subtract Immediate with Carry Rd ← Rd - K - C Z,C,N,V,S,H 1AND Rd, Rr Logical ANDRd ← Rd • Rr Z,N,V,S 1ANDI Rd, K Logical AND with Immediate Rd ← Rd • K Z,N,V,S 1OR Rd, Rr Logical ORRd ← Rd v Rr Z,N,V,S 1ORI Rd, K Logical OR with Immediate Rd ← Rd v K Z,N,V,S 1EOR Rd, Rr Exclusive OR Rd ← Rd ⊕ Rr Z,N,V,S 1COM Rd One’s Complement Rd ← $FF − Rd Z,C,N,V,S 1NEG Rd Two’s Complement Rd ← $00 − Rd Z,C,N,V,S,H 1SBR Rd,K Set Bit(s) in Register Rd ← Rd v K Z,N,V,S 1CBR Rd,K Clear Bit(s) in Register Rd ← Rd • ($FFh - K)Z,N,V,S 1INC Rd Increment Rd ← Rd + 1Z,N,V,S 1DEC Rd DecrementRd ← Rd − 1 Z,N,V,S 1TST Rd Test for Zero or Minus Rd ← Rd • Rd Z,N,V,S 1CLR Rd Clear Register Rd ← Rd ⊕ Rd Z,N,V,S 1SER Rd Set Register Rd ← $FF None 1BRANCH INSTRUCTIONSRJMP kRelative Jump PC ← PC + k + 1None 2IJMP Indirect Jump to (Z)PC(15:0) ← Z, PC(21:16) ← 0None 2RCALL kRelative Subroutine Call PC ← PC + k + 1None 3/4ICALL Indirect Call to (Z)PC(15:0) ← Z, PC(21:16) ← 0None 3/4RET Subroutine Return PC ← STACK None 4/5RETI Interrupt Return PC ← STACKI 4/5CPSE Rd,Rr Compare, Skip if Equal if (Rd = Rr) PC ← PC + 2 or 3None 1/2/3CP Rd,Rr CompareRd − Rr Z, C,N,V,S,H 1 CPC Rd,Rr Compare with Carry Rd − Rr − C Z, C,N,V,S,H 1CPI Rd,K Compare with Immediate Rd − KZ, C,N,V,S,H 1SBRC Rr, b Skip if Bit in Register Cleared if (Rr(b)=0) PC ← PC + 2 or 3 None 1/2/3SBRS Rr, b Skip if Bit in Register is Set if (Rr(b)=1) PC ← PC + 2 or 3None 1/2/3SBIC A, b Skip if Bit in I/O Register Cleared if (I/O(A,b)=0) PC ← PC + 2 or 3 None 1/2/3SBIS A, b Skip if Bit in I/O Register is Set if (I/O(A,b)=1) PC ← PC + 2 or 3None 1/2/3BRBS s, k Branch if Status Flag Set if (SREG(s) = 1) then PC ←PC+k + 1None 1/2BRBC s, k Branch if Status Flag Cleared if (SREG(s) = 0) then PC ←PC+k + 1None 1/2BREQ k Branch if Equal if (Z = 1) then PC ← PC + k + 1None 1/2BRNE k Branch if Not Equal if (Z = 0) then PC ← PC + k + 1None 1/2BRCS k Branch if Carry Set if (C = 1) then PC ← PC + k + 1None 1/2BRCC k Branch if Carry Cleared if (C = 0) then PC ← PC + k + 1None 1/2BRSH k Branch if Same or Higher if (C = 0) then PC ← PC + k + 1None 1/2BRLO k Branch if Lower if (C = 1) then PC ← PC + k + 1None 1/2BRMI k Branch if Minus if (N = 1) then PC ← PC + k + 1None 1/2BRPL k Branch if Plusif (N = 0) then PC ← PC + k + 1None 1/2BRGE k Branch if Greater or Equal, Signed if (N ⊕ V= 0) then PC ← PC + k + 1None 1/2BRLT k Branch if Less Than Zero, Signed if (N ⊕ V= 1) then PC ← PC + k + 1None 1/2BRHS k Branch if Half Carry Flag Set if (H = 1) then PC ← PC + k + 1None 1/2BRHC k Branch if Half Carry Flag Cleared if (H = 0) then PC ← PC + k + 1None 1/2BRTS k Branch if T Flag Set if (T = 1) then PC ← PC + k + 1None 1/2BRTC k Branch if T Flag Cleared if (T = 0) then PC ← PC + k + 1None 1/2BRVS k Branch if Overflow Flag is Set if (V = 1) then PC ← PC + k + 1None 1/2BRVC k Branch if Overflow Flag is Cleared if (V = 0) then PC ← PC + k + 1None 1/2BRIE k Branch if Interrupt Enabled if ( I = 1) then PC ← PC + k + 1None 1/2BRID k Branch if Interrupt Disabled if ( I = 0) then PC ← PC + k + 1None 1/2BIT AND BIT-TEST INSTRUCTIONSLSL Rd Logical Shift Left Rd(n+1) ← Rd(n), Rd(0) ← 0Z,C,N,V,H 1LSR Rd Logical Shift Right Rd(n) ← Rd(n+1), Rd(7) ← 0Z,C,N,V 1ROL Rd Rotate Left Through Carry Rd(0)←C,Rd(n+1)← Rd(n),C ←Rd(7)Z,C,N,V,H 1ROR Rd Rotate Right Through Carry Rd(7)←C,Rd(n)← Rd(n+1),C ←Rd(0)Z,C,N,V 1ASR Rd Arithmetic Shift Right Rd(n) ← Rd(n+1), n=0..6Z,C,N,V 1SWAP Rd Swap Nibbles Rd(3..0)←Rd(7..4),Rd(7..4)←Rd(3..0)None 1BSETs Flag SetSREG(s) ← 1SREG(s)1108235CS–AVR–06/12ATtiny20BCLR sFlag ClearSREG(s) ← 0SREG(s)1SBI A, b Set Bit in I/O Register I/O(A, b) ← 1None 1CBI A, b Clear Bit in I/O RegisterI/O(A, b) ← 0None 1BST Rr, b Bit Store from Register to T T ← Rr(b)T 1BLD Rd, bBit load from T to Register Rd(b) ← TNone 1SEC Set Carry C ← 1C 1CLC Clear Carry C ← 0C 1SEN Set Negative Flag N ← 1N 1CLN Clear Negative Flag N ← 0N 1SEZ Set Zero Flag Z ← 1Z 1CLZ Clear Zero Flag Z ← 0Z 1SEI Global Interrupt Enable I ← 1I 1CLI Global Interrupt Disable I ← 0I 1SES Set Signed Test Flag S ← 1S 1CLS Clear Signed Test FlagS ← 0 S 1SEV Set Two’s Complement Overflow.V ← 1V 1CLV Clear Two’s Complement Overflow V ← 0 V 1SET Set T in SREG T ← 1T 1CLT Clear T in SREGT ← 0T 1SEH Set Half Carry Flag in SREG H ← 1H1CLHClear Half Carry Flag in SREG H ← 0H 1DATA TRANSFER INSTRUCTIONS MOV Rd, Rr Copy Register Rd ← RrNone 1LDI Rd, K Load Immediate Rd ← KNone 1LD Rd, X Load IndirectRd ← (X)None 1/2LD Rd, X+Load Indirect and Post-Increment Rd ← (X), X ← X + 1None 2LD Rd, - X Load Indirect and Pre-Decrement X ← X - 1, Rd ← (X)None 2/3LD Rd, Y Load IndirectRd ← (Y)None 1/2LD Rd, Y+Load Indirect and Post-Increment Rd ← (Y), Y ← Y + 1None 2LD Rd, - Y Load Indirect and Pre-Decrement Y ← Y - 1, Rd ← (Y)None 2/3LD Rd, Z Load IndirectRd ← (Z)None 1/2LD Rd, Z+Load Indirect and Post-Increment Rd ← (Z), Z ← Z+1None 2LD Rd, -Z Load Indirect and Pre-Decrement Z ← Z - 1, Rd ← (Z)None 2/3LDS Rd, k Store Direct from SRAM Rd ← (k)None 1ST X, Rr Store Indirect(X) ← RrNone 1ST X+, Rr Store Indirect and Post-Increment (X) ← Rr, X ← X + 1None 1ST - X, Rr Store Indirect and Pre-Decrement X ← X - 1, (X) ← Rr None 2ST Y, Rr Store Indirect(Y) ← RrNone 1ST Y+, Rr Store Indirect and Post-Increment (Y) ← Rr, Y ← Y + 1None 1ST - Y, Rr Store Indirect and Pre-Decrement Y ← Y - 1, (Y) ← Rr None 2ST Z, Rr Store Indirect(Z) ← RrNone 1ST Z+, Rr Store Indirect and Post-Increment.(Z) ← Rr, Z ← Z + 1None 1ST -Z, Rr Store Indirect and Pre-Decrement Z ← Z - 1, (Z) ← Rr None 2STS k, Rr Store Direct to SRAM (k) ← Rr None 1IN Rd, A In from I/O Location Rd ← I/O (A)None 1OUT A, Rr Out to I/O Location I/O (A) ← Rr None 1PUSH Rr Push Register on Stack STACK ← Rr None 2POPRdPop Register from Stack Rd ← STACKNone 2MCU CONTROL INSTRUCTIONSBREAK Break (see specific descr. for Break)None 1NOP No Operation None 1SLEEP Sleep(see specific descr. for Sleep)None 1WDRWatchdog Reset(see specific descr. for WDR)None1MnemonicsOperandsDescriptionOperation Flags#Clocks分销商库存信息: ATMELATTINY20-SSUR。
三极管参数表
|常用三极管参数表下表是常用三极管的一些参数以及替换型号器件型号电压电流代换型号3DG9011 50V 0.3A 2N4124 CS9011 JE9011 9011 50V 0.03A L M9011 SS90119012 40V 0.5A LM90129012(HH) 40V 0.5A SS90129012LT1 40V 0.5A A12983DG9013 40V 0.5A CS9013 JE90139013 40V 0.5A LM90139013(HH) 40V 0.5A SS90139013LT1 40V 0.5A C32653DG9014 50V 0.15A C S9014 JE90149014 50V 0.1A LM9014 SS90149014LT1 50V 0.1A C16239015 50V 0.1A LM9015 SS9015TEC9015 50V 0.15A B C557 2N3906TEC9015A 50V 0.15A B C557 2N3906TEC9015B 50V 0.15A B C557 2N3906TEC9015C 50V 0.15A B C557 2N39063DG9016 30V 0.025A JE90169016 30V 0.25A S S9016TEC9016 40V 0.025A BF240 BF254 BF594 8050 40V 1.5A SS80508050LT1 40V 1.5A KA3265ED8050 50V 0.8A BC337SDT85501 60V 10A 3DK104CSDT85502 80V 10A 3DK104CSDT85503 100V 10A 3DK104DSDT85504 140V 10A 3DK104ESDT85505 170V 10A 3DK104FSDT85506 60V 10A 3DK104CSDT85507 80V 10A 3DK104CSDT85508 100V 10A 3DK104DSDT85509 140V 10A 3DK104EED8550 50V 0.8A BC3378550 40V 1.5A LM8550 SS85508550LT1 40V 1.5A KA32652SA1015 50V 0.15A B C177 BC204 BC212 BC213 BC251 BC257 BC307 BC512 BC557 CG1015 CG673 2SC1815 60V 0.15A B C174 BC182 BC184 BC190 BC384 BC414 BC546 DG458 DG18152SC1815L 60V 0.15A B C550 2SC2240 2S26742SC2675 2SC33782SC1815LT1 60V 0.15A 9014LT12SC945 60V 0.1A BC107 BC171 BC174 BC182 BC183 BC190 BC207 BC237 BC382 BC546 BC547 BC582 DG945 2N2220 2N2221 2N2222 3DG120B 3DG4312 MMBT3904 40V 0.2A BCW72 3DG120CMMBT3906 40V 0.2A BCW70 3DG120CMMBT2222 未知 0.8A BCX19 3DG120CMMBT2222A 75V 0.6A 3DK10CMMBT5401 160V 0.5A 3CA3FMMBTA92 300V 0.5A 3CG180HBC807 50V 0.5A BC338 BC537 BC635 3DK14BBC807R 50V 0.5A BCX17 BCX17R BCW68 BCW68R BC807-W 50V 0.5A BCX17 BCW68 2SB1219ABC817 50V 0.5A BCX19 BCW65 BCX66BC817R 50V 0.5A BCX19 BCX19R BCW65 BCW65R BCX66 BCW66RBC817-W 50V 0.5A BCX19 BCW65 BCW66 2SD1820 2SD1949BC846 80V 0.1A BCV71 BCV72BC846R 80V 0.1A BCV71 BCV71R BCV72 BCV72RBC846-W 80V 0.1A BCV71 BCV72 BCV72RBC847 50V 0.1A BCW71 BCW72 BCW81BC847R 50V 0.1A BCW71 BCW71R BCW72 BCW72R BCW81 BCW81RBC847-W 50V 0.1A BCW71 BCW72 BCW81 2SC4101 2SC4102BC848 30V 0.1A BCW31 BCW32 BCW33 BCW71 BCW72 BCW81BC848R 30V 0.1A BCW31 BCW31R BCW32 BCW32R BCW33 BCW33R BCW71 BCW71R BCW72 BCW72R BCW81 BCW81RBC848-W 30V 0.1A BCW31 BCW32 BCW33 BCW71 BCW72 BCW81 2SC4101 2SC4102 2SC4117BC856 50V 0.1A BCW89BC856R 80V 0.1A BCW89 BCW89RBC856-W 80V 0.1A BCW89 2SA1507 2SA1527 BC857 50V 0.1A BCW69 BCW70 BCW89BC857R 50V 0.1A BCW69 BCW69R BCW70 BCW70R BCW89 BCW89RBC857-W 50V 0.1A BCW69 BCW70 BCW89 2SA1507 2SA1527BC858 30V 0.1A BCW29 BCW30 BCW69 BCW70 BCW89BC858R 30V 0.1A BCW29 BCW29R BCW30 BCW30R BCW69 BCW69R BCW70 BCW70R BCW89 BCW89RBC858-W 30V 0.1A BCW29 BCW30 BCW69 BCW70 BCW89 2SA1507 2SA15272SA733 60V 0.1A BC177 BC204 BC212 BC213 BC251 BC257 BC307 BC513 BC557 3CG120C 3CG4312 MMUN2111 50V 0.1A UN2111MUN2111 50V 0.1A MMUN2111UN2111 50V 0.1A FN1A4M DTA114EK RN24022SA1344MMUN2112 50V 0.1A UN2112MUN2112 50V 0.1A MMUN2112UN2112 50V 0.1A FN1F4M DTA124EK RN24032SA1342MMUN2113 50V 0.1A UN2113MUN2113 50V 0.1A MMUN2113UN2113 50V 0.1A FN1L4M DTA144EK RN24042SA1341MMUN2211 50V 0.1A UN2211MUN2211 50V 0.1A MMUN2211UN2211 50V 0.1A DTC114EK FA1A4M RN14022SC3398MMUN2212 50V 0.1A UN2212MUN2212 50V 0.1A MMUN2212UN2212 50V 0.1A DTC124EK FA1F4M RN14032SC3396MMUN2213 50V 0.1A UN2213MUN2213 50V 0.1A MMUN2213UN2213 50V 0.1A DTC144EK FA1L4M RN14042SC33952SC3356 20V 0.1A 2SC3513 2SC3606 2SC38292SC3838K 30V 0.05A B F517 BF799 2SC3015 2SC3016彩显中易损大功率三极管主要参数表型号功率(W) 反压(V) 电流(A) 功能BU208A 50 1500 5 电源开关管BU508A 75 1500 8 电源开关管BU2508AF 45 1500 8 行管*BU2508DF 125 1500 8 行管*BU2508D 125 1500 8 行管BU2520AF 45 1500 10 行管BU2520AX 45 1500 10 行管*BU2520DF 125 1500 10 行管BU2522AF 45 1500 10 行管*BU2522DF 80 1500 10 行管* BU2525DF 45 800 12 行管BUH515 60 1500 8 行管C1520 10 250 0.2 视放C1566 1.2 250 0.1 视放C1573 0.6 250 0.07 视放C1875 50 1500 3.5 电源开关管C3153 100 900 6 电源开关管C3026 50 1700 5 行管C3457 50 1100 3 电源开关管C3459 90 1100 4.5 电源开关管C3460 100 1100 6 电源开关管C3461 140 1100 8 行管*C3683 50 1500 5 行管C3686 50 1400 8 行管C3687 150 1500 8 行管C3481 120 1500 5 电源开关管C3688 150 1500 10 行管*C3883 50 1500 5 行管C3885 50 1400 7 行管C3886 50 1400 8 行管C3887 80 1400 7 行管C3888 80 1400 80 行管C3889 80 1400 80 行管*C3891 50 1400 6 行管*C3892 50 1400 7 行管*C3893 50 1400 8 行管C3895 60W 1400V 7A 行管C3896 70 1400 8 行管*C3897 180 1500 12 行管C3897 250 1500 25 行管C3998 250 1500 25 行管*C4122 60 1500 6 行管*C4124 70 1500 8 行管*C4125 70 1500 10 行管C4237 150 800 10 行管*C4269 60 1500 7 行管*C4293 50 1500 5 行管*C4294 50 1500 6 行管*C4589 50 1500 10 行管*C4742 50 1500 6 行管*C4744 50 1500 6 行管C4747 50 1500 10 行管*C4769 60 1500 7 行管C4770 60 1500 7 行管C5048 50 1500 12 行管C5088 45 1500 8 行管C5129 50 1500 6 行管C5148 50 1500 8 行管C5250 50 1500 8 行管C5297 60 1500 8 行管C5299 60 1400 8 行管C5339 50 1500 7 行管C5418 120 1500 6 行管*D1396 50 1500 2 行管*D1398 50 1500 5 行管D1402 120 1500 5 电源开关管D1403 120 1500 6 电源开关管*D1426 80 1500 3.5 行管*D1427 80 1500 5 行管*D1428 80 1500 6 行管D1433 80 1500 7 行管D1434 80 1500 5 行管*D1554 40 1500 3.5 行管D1555 50 1500 5 电源开关管*D1878 60 1500 6 行管*D1879 60W 1500V 5A 行管*D1880 70 1500 8 行管*D1881 70 1500 10 行管D1886 70 1500 8 行管D1887 70 1500 10 行管*D2125 50 1500 5 行管*D870 50 1500 5 行管功率Pcm/W 反压BVCBO 电流ICM/A（*带阻尼）进口与国产显示器常用三极管代换表型号可代用型号用途价格2SA562 CG673B、2SB689 预视放2SA670 2SA1069、2SB513 电源调整管2SA673 2SA719、2SA697 帧激励2SA715 3CF3A、2SB529 场输出管2SA778A 3CG21C、CG75-1AB 开关电源误差放大2SA778AK C3CG21G、CG75-1A 开关电源误差放大2SA844D 3CG21C、CG75-1AB 视放2SA844E 3CG21G 视放2SA940 CD568B 场输出管2SA6395 2SA778、2SA858 行激励管2SB337 B337 电源调整管2SB407 3L780 电源调整管2SB548 3CF3B、2SA794 场输出管2SB566AK CD77-1A、3CF5A 电源调整管2SB556K CD77-1A、3CF5B 电源调整2SB621 3CG23B、2SB1035 电源推动管2SC458 3DG4A、2SC664 行振荡2SC536 3DG4A、2SC2320 电源推动管2SC562 G6738、B689 预视放2SC633 3DG6B、2SC1684 行振荡管2SC634 3DG12B 行振荡管2SC643A D2027、2SD818 行输出管2SC680A 3DD205B、2SC1025 场输出2SC681 3DD102B、2SC901 行输出2SC734 3DX200B、2SC2274 行振荡管2SC828 3DG56B、2SC3330 电源误差放大管2SC935 3DD102D、2SD320 电源调整管2SC8937 D2027、2SD818 行输出管2SC1034 2SD818、2SD299 行输出管2SC1162 FA433A、2SC2068 场输出枕形校正2SC1172 D2027、2SD820 行输出管2SC1209 3DG12A、2SD734 电源误差放大管2SC1213 3DG130A、2SC2120 电源误差放大管2SC1213A 3DG12B、2SC1247A 电源误差放大2SC1214 3DA151A、2SC2002 枕形校正2SC1308 D209、2SD820 行输出管2SC1318 3DG12A、2SC2274 行激励管2SC1364 3DX2038、2SC2320 行激励管2SC1505 DA1722B、2SC1757 行视放2SC1507 DA1722B、2SC1756、2SC1757 行激励管2SC1364 3DX2038、C23020 行激励管2SC1520 DA1722B、2SC2068 预视放2SC1566 3DA151D、2SC1514 视放2SC1573 3DA87C、2SC1762 视放2SC1672 3DD102B、2SC2433 电源调整管2SC1685 3DD180、2SC1570 脉冲开关2SC1819 3DA151D、2SC2425 视放2SC1890A 3DA878、2SC2363 视放2SC1905 3DA151D、2SD1163 视放2SC1942 D209、2SD1401 行输出管2SC2233 3DD12B、2SC2373 行输出2SD201 3DD102A、2SD125A 电源调整管2SD226 3DD207、2SD315 电源调整管2SD299 D2027、2SC1308 行输出管2SD350 D2027、2SD348 行输出管2SD380 D209、2SD348 行输出管2SD869 2SD993、2SD898B 行输出管C3150 C3151、C3152 开关管BU508A BU508D、C3893、C3895、C3897 开关管彩显中易损场效应管主要参数表型号功率Pcm/W 最大电流IDM/A D-S极间耐压价格2SK534 100W 5A 800V2SK538 100 3 9002SK557 100 12 5002SK560 100 15 5002SK566 78 3 800 2SK644 125 10 500 2SK719 120 5 900 2SK725 125 15 500 2SK727 125 5 900 2SK774 120 18 500 2SK785 150 20 500 2SK787 150 8 900 2SK788 150 13 500 2SK790 150 15 500 2SK872 150 6 900 2SK955 150 9 800 2SK956 150 9 800 2SK962 150 8 900 2SK1019 300 30 500 2SK1020 300 30 5002SK1081 125 7 800 2SK1082 125 6 800 2SK1117 100 6 600 2SK1118 45 6 600 2SK1119 100 4 1000 2SK1120 150 8 1000 2SK1171 240 5 1400 2SK1198 75 3 800 2SK1249 130 15 500 2SK1250 150 20 500 2SK1271 240 15 1400 2SK1280 150 18 500 2SK1281 120 4 700 2SK1341 100 5 900 2SK1342 100 8 9002SK1357 125 5 900 2SK1358 150 9 900 2SK1451 120 5 900 2SK1498 120 20 500 2SK1500 160 25 500 2SK1502 120 7 900 2SK1507 50 6 600 2SK1512 150 10 850 2SK1531 150 15 500 2SK1537 100 5 900 2SK1539 150 10 900 2SK1563 150 12 500 2SK1649 100 6 900 2SK1794 150 6 900 2SK2038 125 6 9002N7000 0.4 0.2 60BUZ385 125 6 500 GH30N60 180 30 600 GH30N100 250 30 1000 GH40N60 200 40 600H1245 120 12 450H13N50 150 13 500IBF834 100 3 500IPF440 125 8 500IRT450 150 13 500IRF350 150 13 500IRF360 300 25 400IRF440 125 8 500IRF451 150 13 450IRF460 300 21 500IRF620 40 5 200IRF634 75 8.1 250 IRF640 125 18 200 IRF730 75 5.5 400 IRF740 125 10 400 IRF820 50 2.5 500 IRF830 75 4.5 500 IRF834 100 5 500 IRF840 125 8 500 IRF841 125 8 450 IRF842 125 7 500 IRF9610 20 1 200 IRF9630 75 6.5 200 IRF9640 125 11 200 IRF450 150 13 500 IRFD113 1 0.8 80FIRP150 180 41 100IRFP151 180 19 60IRFP240 150 31 200IRFP250 180 31 200IRFP251 180 33 150IRFP254 180 23 250IRFP350 180 16 400IRFP351 180 16 350IRFP360 250 23 400IRFP450 180 14 500IRFP452 180 12 500IRFP460 250 20 500 IRFBC40 125 6.2 600IRF4P51 180 14 450 IXGH10N100 100 10 1000IXGH15N100 150 150 1000 IXGH20N60 150 20 600 IXTH50N30 150 50 300 IXTH50X20 250 50 200 IXTH67N10 200 67 100 LXTH24N50 250 24 500 LXTH30N20 180 30 200 LXTH30N30 180 30 300 LXTH30N50 300 30 500 LXTH40N30 250 40 300 LXTH50N10 150 50 100 LXTH50N20 150 50 200 LXTH67N70 200 67 100 LXTH75N10 200 75 100MTH8N50 120 8 500MTM6N80 120 6 800METH10N50 120 10 500 MTH12N50 120 12 500 MTH14N50 150 14 500 MTH20N20 120 20 200 MTH25N10 150 25 200 MTH30N10 120 30 100 MTH35N15 150 35 150 MTH40N10 150 40 100 MTH8N60 120 8 600 MTM10N20 75 10 200 MTM20N20 125 20 200 MTM25N10 100 25 100 MTM30N10 120 30 100 MTM40N10 150 40 100 MTM6N90 150 6 900 MTM8N50 100 8 500MTM8N90 150 8 900 MTP3N60 75 3 600 MTP3N100 75 3 1000 MTP4N60 50 4 600 MTP4N80 50 4 800 MTP5P25 75 5 250 MTP5N45 75 5 450 MTP5N50 75 5 500 MTP6N60 125 6 600 MTP6N60E 125 6 600 RFP50N05 132 50 50 RFP50N05L 110 50 50型号反压(V) 电流(A) 功率(W) β值阻尼D1175 1500 5 100 15 有D1279 1500 10 50 20 无D1391 1500 5 80 12 有D1398 1500 5 50 12 有D1403 1500 6 120 20 无D1426 1500 3.5 80 有D1427 1500 5 80 有D1428 1500 6 80 12 有D1429 1500 2.5 80 20 有D1431 1500 5 80 无D1432 1500 6 80 20 有D1433 1500 7 80 20 有D1439 1500 3 50 有D1453 1500 3 50 无D1497 1500 6 50 15 有D1545 1500 5 50 20 无D1547 1500 7 50 20 无D1554 1500 3.5 40 有D1555 1500 5 50 有D1556 1500 6 50 12 有D1651 1500 5 60 有D1652 1500 6 60 15 有D1710 1500 6 100 20 无D1878 1500 6 50 15 有D1879 1500 6 60 15 有D1880 1500 8 70 有D1881 1500 10 70 有D1884 1500 5 60 无D1885 1500 6 60 无D1887 1500 10 70 12 无D1910 1500 3 40 20 有D1959 1400 10 50 20 无D2125 1500 5 50 12 有D2251 1500 7 60 有D2252 1500 7 60 无D2253 1700 6 50 有D2334 1500 5 80 15 无D2335 1500 7 100 15 无型号P/N 参数备注及用途型号P/N 参数A940 P 150V1.5A25W 4MHz TO-220 D1271 N150V7A40WC2073 N 150V1.5A25W 4MHz TO-220 D1273A N100V3A40WA1304C3296 150V1.5A20W 4MHz D1275A N 80V2A35WB647D667 120V1A0.9W 140MHz D1266 N 80V3A35WB649D669 180V1.5A 140MHz D1264A N 200V2A30WB834D880 60V3A30W TO-220 D1309 N 150V8A40WB546D401 200V2A20W 5MHz D1365 N 800V3A40WB772D882 40V3A10W 80MHz D1415 N 100V7A40W56105609 50V0.8A0.625W 100MHz D1499 N 100V5A40WB1185D1762 60V3A25W 70MHz D2025 N 100V8A30WB1186D1763 120V1.5A20W 50MHz TIP102 N 100V8A80WTIP42CTIP41C 100V5A65W >3MHz TOP202 TOP222TIP127TIP122 100V5A65W >1000 TOP223 TOP224 封装MJE13003 N 400V1.5A40WC2335 N 400V7A40W MJE13005 N 400V4A75W C3148 N 800V3A40W MJE13007 N 400V8A80W C3309 N 400V2A20W MJE13009 N 400V12A100WC3310 N 400V5A30WC4004 N 800V1A30W C388A N 25V0.02AC3039 N 400V7A50W C458 N 30V0.1A0.2WC2233 N 200V4A40W C536 N 40V0.1A0.2WC2373 N 200V7.5A40W C945 N 60V0.1A0.25W C3852A N 100V3A25W 15MHz >500 C752 N30V0.1A0.1WC4834 N 400V8A45W <300/140nS C1047 N30V0.02A65MHzC5027 N C1162 N 35V2.5A10WC5249 N C1213 N 50V0.5A0.4W D313 N 60V3A30W 8MHz C1360 N 50V0.05A1WD1138 N C1383 N 30V1A1WD1071 N 450V6A40W >500 C1473 N 300V0.07A0.75W 参数备注及用途型号参数备注及用途N 1500/600V3.5A40W 行TOS BUW11A N1000/450V5A100W 电源AF=50W PHIN 1500/600V5A50W 行TOS BUW12A N1000/450V10A125W 电源AF=50W PHIN 1500/600V6A50W 行TOS BUW13A N1000/450V15A175W 电源AF=50W PHIN 1700/600V6A50W 行TOS BU2508AF N1500/700V8A50W 电源PHI1500/700V8A50W 行PHIN 1500/600V5A80W 行TOS BU2508AX N 1500/700V8A50W 电源PHIN 1500/600V7A80W 电源TOS BU2508DX N 1500/700V8A50W 行PHIN 1500/600V7A80W 行TOS BU2520AF N 1500/800V10A50W 电源PHIN 1500/600V6A80W 行TOS BU2520DF N 1500/800V10A50W 行PHIN 1500V5A50W 电源/行TOS BU2520AX N 1500/800V10A50W 电源/行PHIN 1500V7A50W 电源/行TOS BU2520DX N 1500/800V10A60W 行PHIN 1400V10A50W 电源/行TOS BU2522AX N 1500/800V10A60W 电源/行PHIN 1500/600V6A50W 电源TOS BU2523AX N 1500/800V10A60W 电源/行PHI1500/800V12A60W 电源/行PHIN 1500/600V10A50W 电源TOS BU2527DX N1500/800V12A60W 行PHIN 1500/600V8A50W 电源TOS C4236 N1200/800V6A100W 电源SHIN 1500/600V8A50W 行TOS C4237 N1200/800V10A50W 电源SHIN 1700/600V8A50W 行TOS D1541 N 1500V3A50W 行MATN 1500/600V7A50W 行TOS C4111 N1500/700V10A150W 电源MATN 1500/600V8A50W 行TOS MN650 N 1500/600V5A80W电源SAKN 1500/600V10A50W 电源TOS C4058 N600/450V10A100W 电源SHIN 1500/600V8A50W 电源TOS D2333 N1500/600V5A80W 行MATN 1400/600V12A200W 电源TOS D2334 N1500/600V5A80W 电源MATN 900/800V5A100W 电源TOS D2335 N1500/600V7A100W 行MATN 1500V8A125W 电源TOS C4706 N 900/600V14A130W电源SAKN 1500/700V8A60W 电源ST BUH715N N1500/700V10A60W 电源STN 1500/700V8A60W 行ST C3927 N 900/600V10A120W电源SAKN 1500/700V10A57W 电源ST C3679 N900/800V5A100W 电源SAKN 1500/700V7A50W 行ST C5287 N 900/550V5A80W 电源SAK型号P/N 参数备注及用途型号P/N 参数D2445 N 1500/800V6A50W K30A 50VIdss>0.3up<5V C4745 N 1500/800V6A50W 电源HIT K11750VIdss>0.6up<10VC4746 N 1500/800V8A50W 电源HIT K11850VIdss>0.3up<1.5VC5250 N 1500V8A50W 行HIT K304 30VIdss>0.6up<4V C5207A N 1500/800V10A50W 电源HIT K1117600V6A100WD2300 N 1500V5A50W 行HIT K1118 600V6A45W C4297 N 500/400V12A75W 电源SAK K11191000V4A100WC4927 N 1500V8A50W 行HIT K2141 600V+/-6A35W D1959 N 1400/650V10A50W 电源HIT K1507600V9A50WC4589 N 1500/800V10A50W 电源HIT K1995900V+/-3A35WC4877 N 1500V8A50W 行HIT K1445 450V5A30WKSD5072 N 1500/800V5A60W 行SAM K2056800V4A40WKSD5076 N 1500/800V5A60W 行SAM IRFBC30600V3.6A74WKSC5802 IRFBC40R 600V6.2A125W KSC5803 N 1500/800V7A50W 行SAM IRFBC60KSC5386 N 1500/800V7A50W 行SAM IRF530N100V15A80WKSC5088 N 1500/800V8A50W 电源SAM IRF9530N100V13A75WKSD5702 N 1500V6A70W 行SAM IRF540N100V27A94WKSD5703 IRF9540N 100V19A94WBUS13A N 1000/450V15A175W 电源VAL TO-3 IRF610200V3.3A43WBUS14A N 1000/450V30A250W 电源VAL TO-3 IRF9610200V1.8A20WBUV48A N 1000/450V15A150W 电源ST IRF620200V5A40WC3552 N 1100/800V12A150W 电源SAK IRF9620200V5A40WC5386 N 1500/600V8A50W 电源TOS IRF630200V9A75WC4119 N 1500/800V15A250W 达林顿+阻尼IRF9630200V6.5A75W系列晶振455KHz-503KHz IRF640 200V18A125W3.57MHz-30MHz IRF9640 200V11A125W二极管开关管快恢复整流管IRF730 400V5.5A75W 稳压管阻尼管IRF740 400V10A125W型号参数特性型号参数BC327 P 50V0.8A0.625W 100MHz BTA08 8A双向BC337 N 50V0.8A0.625W 100MHz BTA12 12A双向BC328 P 30V0.8A0.625W 100MHz BTA20 20A双向BC338 N 30V0.8A0.625W 100MHz BTA26 26A双向BC369 P 25V1A.8W 65MHz BTA41 41A双向BC546 N 80V0.1A0.5W 300MHz BTA16 16A双向BC547 N 50V0.1A0.5W 300MHz 2P4M 3A单向BC558 N 30V0.1A0.5W 150MHz CR3AM 3A单向BC556 P 80V01A0.5W 150MHz TLC336 3A双向BC557 P 50V0.1A0.5W 150MHz BCR3AM 3A双向9011 N 50V0.03A0.4W 150MHz FD312 彩电用9012 P 40V0.5A0.625W FD315 彩电用9013 N 40V0.5A0.625W PH2369 彩电用9014 N 50V0.1A0.45W 150MHz 1W稳压管9015 P 50V0.1A0.45W 100MHz 1N4728A 3.3V 9016 N 30V0.025A0.4W 620MHz 1N4730A3.9V 9018 N 30V0.05A0.4W 700MHz 1N4732A 4.7V8050 N 40V1.5A1W 100MHz 1N4734A5.6V8550 P 40V1.5A1W 100MHz 1N4736A 6.8V2N5551 N 180V0.6A0.625W 100MHz 1N4738A 8.2V 2N5401 P 180V0.6A0.625W 100MHz 1N4740A 10V可控硅1N4742A 12V1A单向BT169 100-6 100-8 FOR1B FOR3G 1N4744A15V1A双向97A6 94A4 97A4 1N4746A 18V BT136 6A双向中间引线通散热片1N4748A 22VBT137 8A双向中间引线通散热片1N4750A 27VBT138 10A 双向中间引线通散热片1N4752A 33V BT139 12A双向中间引线通散热片1N4756A 47V BTA06 6A双向中间线不通散热片1N4764A 100V型号参数特性型号参数D820 N 1500/600V5A80W 电源D1047 N 160V12A100W D869 N 1500/600V3.5A50W 行B817 P 160V12A100W D850 N 1500/700V3A65W 电源D1559 N 100V20A100W D870 N 1500/600V5A50W 行B1079 P 100V20A100W D905 N 1400/650W8A50W 电源D2256 N 120V25A120W D871 N 1500/600V6A50W 行B1494 P 120V25A120W D1204 N 500/400V15A100W 电源D718 N 120V8A80WD898 N 1500V3.5A50W 行B688 P 120V8A80W D1279 N 1400/700V10A50W 电源D1435 N100V15A100WD951 N 1500V3A65W 行B1031 P 100V15A100W C1942 N 1500/800V3A50W 电源带阻三极管D1173 N 1500V5A70W 行RN1201 RN1202C2027 N 1500/800V5A50W 电源RN1206 RN2201 D1175 N 1500V5A100W 行RN1001 RN1001 大功率功放管DTA114 DTA144C3280 N 160V12A120W HiFi TOS DTC144A1301 P 160V12A120W HiFi TOD 光藕及三端C3281 N 200V15A150W HiFi TOS 521-1 621-1A1302 P 200V15A150W HiFi TOS 631 632C5200 N 230V15A150W HiFi TOS 4N35 CNX62A A1943 P 230V15A150W HiFi TOS PC113 PC117 D2155 N 180V15A150W HiFi TOS SE090 SE110B1429 P 180V15A150W HiFi TOS SE120 SE125C5198 N 140V10A100W HiFi TOS SE135 SE140A1941 P 140V10A100W HiFi TOS 78(L)06 78(L)08 C5196 N 120V6A60W HiFi TOS 78(L)12 78(L)15A1939 P 120V6A60W HiFi TOS 78(L)24 79(L)05C3182 N 140V10A100W HiFi TOS 79(L)08 79(L)09 A1265 P 140V10A100W HiFi TOS 79(L)15 79(L)18 型号P/N 参数备注及用途型号P/N 参数C1514 N 300V0.1A1.25W 80MHz Vid-L HIT C2481 N150V1.5A20WC1507 N 300V0.2A15W 80MHz Vid-L NIP C2611 N300V0.1A0.8WC1569 N 300V0.15A12.5W 100MHz Vid TOS C2330 N300V0.1A1WC1573 N 300V0.07A1W 80MHz NF Vid MAT C2331 N80V0.7A1WC1627 N 80V0.4A0.8W Uni TOS C2655 N 60V2A0.9WC1687 N 40V0.03A0.4W NF/ZF MAT C2688 N300V0.2A10WC1756 N 300V0.2A15W >50MHz SAY C2653 N350V0.2A15WC1740 N 50V0.1A0.3W 180MHz Uni TOS C2785 N60V0.1A0.25WC1815 N 60V0.15A0.4W >80MHz Uni TOS C2878 N50V0.3A0.4WC1846 N 45V1A5W 200MHzNF/S-LMAT C3355 N20V0.1A0.6WC1906 N 30V0.05A1GHz UHF HIT C3417 N 300V0.1A5W C1959 N 35V0.5A0.5W 300MHz Uni TOS C3419 N40V0.8A5WC2001 N 30V0.7A0.6W 70MHz Uni NIP C3420 N50V5A10WC2068 N 300V0.05A1.5W 95MHz Vid TOS C3807 N30V2A15WC2120 N 30V0.8A0.6W 120MHz Uni TOS C3789 N300V0.1A7WC2026 N 30V0.05A0.25W 2GHz UHF NIP C3198 N60V0.15A0.4WC2060 N 40V1A0.75W 150MHz Uni TOY C4075 N300V0.2A10WC2229 N 200V0.05A0.8W 120MHz Vid TOS C4544 N300V0.1A8WC2230 N 200V0.1A0.8W >50MHz Vid TOS D400 N25V1A1WC2271 N 300V0.1A0.9W Vid TOS D471 N 30V1A1W C2258 N 300V0.1A4W Vid MAT D965 N 40V5A0.75W C2240 N 120V0.1A0.3W 100MHz NF.rd TOS D966 N40V5A1WC2482 N 300V0.1A0.9W Vid TOS D612 N 35V2A10W C2236 N 30V1.5A0.9W Uni TOS D789 N 100V1A0.9W C2371 N 300V0.1A10W Vid NIP D1640 N 120V2A1.2WC2383 N 160V1A0.9W NF/VA TOS D415 N 120V0.8A10W C2482 N 300V0.1A0.9W Vid TOS C3946 N 350V0.2A15W C2594 N 40V5A10W 150MHz D1406 N 60V3A30W C2500 N 30V2A0.9W 150MHz Uni TOS。
IXSQ20N60B2D1;IXSH20N60B2D1;中文规格书,Datasheet资料
GCEDS99174(10/04)Features•International standard package •Guaranteed Short Circuit SOA capability •Low V CE(sat)-for low on-state conduction losses •High current handling capability •MOS Gate turn-on -drive simplicity•Fast fall time for switching speeds up to 20 kHz Applications•AC motor speed control•Uninterruptible power supplies (UPS)•Welding Advantages •High power densityIXSH 20N60B2D1High Speed IGBTShort Circuit SOA CapabilitySymbol Test Conditions Maximum RatingsV CES T J = 25°C to 150°C600V V CGR T J = 25°C to 150°C; R GE = 1 M Ω600V V GES Continuous ± 20V V GEM Transient ± 30V I C25T C = 25°C 35A I C110T C = 110°C20A I F(110)21A I CMT C = 25°C, 1 ms60A SSOA V GE = 15 V, T J = 125°C, R G = 82Ω I CM = 32A(RBSOA)Clamped inductive load @ 0.8 V CESt SCV GE = 15 V, V CE = 360 V, T J = 125°C 10µs (SCSOA)R G = 82 Ω, non repetitive P C T C = 25°C190W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°CWeight2 g Maximum lead temperature for soldering 300°C 1.6 mm (0.062 in.) from case for 10 sMaximum tab temperature for soldering for 10s 260°CSymbolTest Conditions Characteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.BV CES I C = 250 µA, V GE = 0 V 600V V GE(th)I C= 750 µA, V CE = V GE3.56.5V I CES V CE = V CES 85µA V GE = 0 VT J = 125°C0.6mA I GES V CE = 0 V, V GE = ± 20 V ± 100nA V CE(sat)I C= 16A, V GE = 15 V2.5VPreliminary Data SheetV CES =600 V I C25=35 A V CE(sat)= 2.5 VG = Gate C = Collector E = Emitter TAB = CollectorTO-247 (IXSH)D1© 2004 IXYS All rights reservedReverse Diode (FRED)Characteristic Values(T J = 25°C, unless otherwise specified)SymbolTest Conditions min.typ.max.V F I F = 15A, V GE = 0 VT J =150°C1.35V2.10V I RM I F = 25A, V GE = 0 V, -di F /dt = 100 A/µs T J =100°C 4.5A t rr V R = 100 VT J =100°C 110ns t rr I F = 1 A; -di/dt = 100 A/µs; V R = 30 V 30ns R thJC1.6K/WSymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min. typ. max.g fs I C = 16A; V CE = 10 V, Note 13.57.0S C ies 800pF C oes V CE = 25 V, V GE = 0 V 110pF C res f = 1 MHz28pF Q g 33nC Q ge I C = 16A, V GE = 15 V, V CE = 0.5 V CES 12nC Q gc 12nC t d(on)30ns t ri 30ns t d(off)116ns t fi 126ns E off 380600µJ t d(on)30ns t ri 30ns E on 0.52mJ t d(off)180ns t fi 210ns E off 970µJR thJC 0.66K/WR thCS0.25K/WInductive load, T J = 25°CI C = 16A, V GE = 15 VV CE = 0.8 V CES , R G = 10 ΩSwitching times may increase for V CE (Clamp) > 0.8 • V CES , higher T J or increased R GInductive load, T J = 125°C I C = 16 A, V GE = 15 VV CE = 0.8 V CES , R G = 10 ΩSwitching times may increase for V CE (Clamp) > 0.8 • V CES , higher T J or increased R GNote 1: Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %IXYS MOSFETs and IGBTs are covered by 4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,585 one or moreof the following U.S. patents:4,850,0725,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405B26,759,6924,881,1065,034,7965,187,1175,486,7156,306,728 B16,583,5056,710,4630.00.40.81.21.6010203040I FA t fr µsFig. 3. Peak reverse current I RM versus -di F /dtFig. 2. Reverse recovery charge Q r versus -di F /dtFig. 1. Forward current I F versus V FF /dtFig. 6. Peak forward voltage V FR and t fr versus di F /dt Fig. 7Transient thermal resistance junction-to-caseConstants for Z thJC calculation:i R thi (K/W)t i (s)10.9080.005220.350.000330.3420.017分销商库存信息:IXYSIXSQ20N60B2D1IXSH20N60B2D1。
FGH40N60UFDTU;中文规格书,Datasheet资料
©2009 Fairchild Semiconductor Corporation
1
FGH40N60UFD Rev. C1
C
G
E
Ratings 600 ± 20 80 40 120 40 20 80 290 116
-55 to +150 -55 to +150
300
Units V V A A A A A A
W W oC oC
oC
Typ.
-
Max.
0.43 1.45 40
Units
oC/W oC/W oC/W
/
FGH40N60UFD 600V, 40A Field Stop IGBT
Package Marking and Ordering Information
TC = 25oC TC = 125oC TC = 25oC TC = 125oC
Min.
-
Typ.
1.95 1.85 45 140 75 375
Max
2.6 -
Units
V ns nC
FGH40N60UFD Rev. C1
3
/
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 20A
TC = 25oC TC = 125oC
trr Qrr
Diode Reverse Recovery Time
IES =20A, dIES/dt = 200A/µs Diode Reverse Recovery Charge
FGH40N60UFD 600V, 40A Field Stop IGBT
WP2060SRD;中文规格书,Datasheet资料
Notes: 1. 1/10 Duty Cycle, 0.1ms Pulse Width. 2. 2mm below package base. 3. 5mm below package base.
Super Bright Red 75 30 155 5 -40°C To +85°C 260°C For 3 Seconds 260°C For 5 Seconds
Super Bright Red
WP207 APPROVED: WYNEC
REV NO: V.2 CHECKED: Allen Liu
DATE: DEC/08/2007 DRAWN: R.Chen
PAGE: 3 OF 6 ERP: 1101002693
/
Units mW mA mA V
SPEC NO: DSAH3807 APPROVED: WYNEC
REV NO: V.2 CHECKED: Allen Liu
DATE: DEC/08/2007 DRAWN: R.Chen
PAGE: 2 OF 6 ERP: 1101002693
/
/
SPEC NO: DSAH3807 APPROVED: WYNEC
REV NO: V.2 CHECKED: Allen Liu
DATE: DEC/08/2007 DRAWN: R.Chen
PAGE: 5 OF 6 ERP: 1101002693
/
SPEC NO: DSAH3807 APPROVED: WYNEC
REV NO: V.2 CHECKED: Allen Liu
DATE: DEC/08/2007 DRAWN: R.Chen
PAGE: 1 OF 6 ERP: 1101002693
FCPF20N60 PDF规格书
FCP20N60 / FCPF20N60 600V N-Channel MOSFETFCP20N60 / FCPF20N60 600V N-Channel MOSFETPackage Marking and Ordering InformationElectrical Characteristics T C= 25°C unless otherwise notedNotes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. I AS = 10A, V DD = 50V, R G = 25Ω, Starting T J = 25°C3. I SD ≤ 20A, di/dt ≤ 200A/µs, V DD ≤ BV DSS , Starting T J = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical CharacteristicsDevice MarkingDevicePackageReel SizeTape WidthQuantityFCP20N60FCP20N60TO-220--50FCPF20N60FCPF20N60TO-220F--50SymbolParameterConditionsMinTypMax UnitsOff Characteristics BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = 250µA, T J = 25°C 600----V V GS = 0V, I D = 250µA, T J = 150°C --650--V ∆BV DSS / ∆T J Breakdown Voltage Temperature CoefficientI D = 250µA, Referenced to 25°C --0.6--V/°C BV DS Drain-Source Avalanche Breakdown VoltageV GS = 0V, I D = 20A --700--V I DSS Zero Gate Voltage Drain Current V DS = 600V, V GS = 0V V DS = 480V, T C = 125°C --------110µA µA I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V ----100nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V -----100nA On CharacteristicsV GS(th)Gate Threshold Voltage V DS = V GS , I D = 250µA 3.0-- 5.0V R DS(on)Static Drain-Source On-ResistanceV GS = 10V, I D = 10A --0.150.19Ωg FS Forward Transconductance V DS = 40V, I D = 10A (Note 4)--17--S Dynamic CharacteristicsC iss Input Capacitance V DS = 25V, V GS = 0V,f = 1.0MHz--23703080pF C oss Output Capacitance--12801665pF C rss Reverse Transfer Capacitance --95--pF C oss Output CapacitanceV DS = 480V, V GS = 0V, f = 1.0MHz --6585pF C oss eff.Effective Output Capacitance V DS = 0V to 400V, V GS = 0V --165--pF Switching Characteristicst d(on)Turn-On Delay Time V DD = 300V, I D = 20A R G = 25Ω(Note 4, 5)--62135ns t r Turn-On Rise Time --140290ns t d(off)Turn-Off Delay Time --230470ns t f Turn-Off Fall Time --65140ns Q g Total Gate Charge V DS = 480V, I D = 20A V GS = 10V(Note 4, 5)--7598nC Q gs Gate-Source Charge --13.518nC Q gd Gate-Drain Charge--36--nC Drain-Source Diode Characteristics and Maximum RatingsI S Maximum Continuous Drain-Source Diode Forward Current ----20A I SM Maximum Pulsed Drain-Source Diode Forward Current ----60A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 20A---- 1.4V t rr Reverse Recovery Time V GS = 0V, I S = 20AdI F /dt =100A/µs (Note 4)--530--ns Q rrReverse Recovery Charge--10.5--µCTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.FCP20N60 / FCPF20N60 600V N-Channel MOSFETDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™Wire™ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™。
常用高清行管和大功率三极管主要参数资料
常用高清行管和大功率三极管主要参数资料高清彩电行管损坏的原因及代换现在，大屏幕彩色电视大都是数字高清，原来50Hz的场扫描频率接近人眼感知频闪的临界点，所以高清电视都是提高扫描频率来提高图像的清晰度，即将场扫描提高到100Hz或是60Hz逐行，这样就会使行扫描的频率提高一倍，自然行输出管的开关速度和功耗都会随之增加，普通的行输出管已经不能胜任，要采用性能更好的大功率三极管。
目前采用的行管有：C5144、C5244、J6920、C5858、C5905等，这些行输出管的耐压都在1500V以上，电流多大于20A，但是由于其功耗比较大，损坏率还是比较高。
归纳起来，其损坏的原因一般有以下六种。
1. 行激励不足如果行激励不足，行管不能迅速截止与饱和，导致行管内阻变大，将造成行输出电路的功耗增加，引起行输出管发烫，一旦超过行管功耗的极限值，便会使行管烧坏。
在海信高清电视中，行振荡方波信号是由数字变频解码板输出，经过一对三极管2SC1815、2SA1015放大后，送到行激励管的基极。
这两个三极管工作在大电流开关状态，故障率相对较高，损坏后就会造成行激励不足，损坏行输出管，对比可以用示波器测量行管基极的波形来确定。
另外，行管基极的限流电阻阻值一般为0.1Ω，与行管的发射极串联，再与行激励变压器并联，若是阻值增大有可能用普通万用表测不出来。
我们曾经修过多例次电阻增值到2Ω以上而导致开机几分钟后行管损坏的故障，且损坏行管的比例较大。
2. 行逆程电压过高在行逆程期间，偏转线圈会对逆程电容充电，逆程电容容量大小决定充电的时间。
容量越小，充电时间越短，充电电压越高，因而会产生很高的反峰脉冲电压。
所以，当行一旦超过行管的耐压值，就会出现屡烧行管的结果。
我们在测量逆程电容时，一般是测量电容的直流参数，而一些ESR等交流参数无法测量，所以最好是代换较可靠。
3. 行偏转线圈或行输出变压器局部短路造成行负责过重常见场输出集成电路击穿导致行偏转线圈或行输出变压器绝缘性能下降，产生局部短路、行输出逆程电容漏电等。
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HGTG20N60B3_NL中文资料
UNITS V V A A A V V
600 600
µs µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE = 360V, TC = 125oC, RG = 25Ω.
Electrical Specifications
PARAMETER
oC/W
Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy Turn-Off Energy (Note 3) Thermal Resistance NOTE:
SPP20N60C3中文资料
VDS = 480 V, ID = 20.7 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4)
IXYS 电路保护芯片数据手册说明书
Symbol Test ConditionsMaximum RatingsV CES T J = 25°C to 150°C1200 V V CGR T J = 25°C to 150°C, R GE = 1M Ω1200 V V GES Continuous ±20 V V GEM Transient ±30VI C25T C = 25°C 48A I C100T C = 100°C 24A I CM T C = 25°C, 1ms 96AI A T C = 25°C 20 A E AST C = 25°C250 mJSSOA V GE = 15V, T J = 125°C, R G = 5ΩI CM = 48A(RBSOA)Clamped inductive load @V CE ≤ 1200V P C T C = 25°C200W T J -55 ... +150 °C T JM 150°C T stg -55 ... +150°C F CMounting force 20..120/4.5..27 N/lb.T L Maximum lead temperature for soldering 300°C T SOLD 1.6mm (0.062 in.) from case for 10s 260 °CV ISOL 50/60 Hz RMS, t = 1min2500 V I ISOL < 1mA, t = 20seconds 3000 VWeight5gSymbol Test ConditionsCharacteristic Values (T J = 25°C, unless otherwise specified) Min. Typ. Max.BV CES I C = 250μA, V GE = 0V 1200 V V GE(th)I C= 250μA, V CE = V GE2.5 5.0 VI CES V CE = V CES 100 μA V GE = 0VT J = 125°C1.5 mAI GES V CE = 0V, V GE = ±20V±100 nAV CE(sat)I C = 20A, V GE = 15V, Note 2 3.6 4.2 VT J = 125°C 3.1 VGenX3TM 1200V IGBTIXGR24N120C3D1V CES = 1200V I C25= 48A V CE(sat)≤ 4.2V t fi(typ)= 110nsHigh speed PT IGBTs for 20-50kHz SwitchingG = Gate C = Collector E = Emitter TAB = CollectorISOPLUS 247TM (IXGR)ISOLATED TABGCEFeatures•DCB Isolated mounting tab•Meets TO-247AD package outline •High current handling capability •Latest generation HDMOS TM process •MOS Gate turn-on -drive simplicity •Avalanche RatedApplications•Switch-mode and resonant-mode power supplies•Uninterruptible power supplies (UPS)•DC choppers•AC motor speed control •DC servo and robot drivesAdvantages •Space savings •Easy assembly •High power density•Very fast switching speeds for high frequency applicationsIXYS reserves the right to change limits, test conditions, and dimensions.Notes:1. Switching times may increase for V CE (Clamp) > 0.8 • V CES , higher T J or increased R G .2. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.PRELIMINARY TECHNICAL INFORMATIONThe product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.IXYS reserves the right to change limits, test conditions, and dimensions.IXYS reserves the right to change limits, test conditions, and dimensions.20060010000400800120140160180200220040801201600.00.51.01.52.0K f T VJC -di F /dt02004006008001000040801200.00.40.81.2V FRdi F /dtV2006001000040080010203040506010010000123450123410203040506070I RMQ rI F A V F-di F /dt-di F /dtA/μs A V μC A/μs A/μs t rrnst fr A/μs μs Q rI RMFig. 21.Forward current I F versus V FFig. 23.Peak reverse current I RMFig. 22.Reverse recovery charge Q rFig. 25.Recovery time t rr versus -di F /dt Fig. 26.Peak forward voltage V FR andFig. 24.Dynamic Parameters Q r , I RM。
LOGIX 420数位流量编码器手册说明书
environment, commercial and municipal plants are being asked tothe enterprise. Alternatively, a product that is easy to set up, provides The Logix®420 allows for fast commissioning, as well as accurate and reliable control at a very competitive price.®Simple InstallationNew mounting options for the Logix® 420 continue to expand the array of control valves that can be managed.Mounting Options: Mounting holes and electronic ports are offered in English and Metric threads. Reliable linkages are easy to install. A direct mount manifold mounting option, for most diaphragm operated Flowserve control valves, is integrated into the body so additional parts are not required. The de-clutchable shaft allows for over rotation during the initial setup without damage.Valve and Actuator Options: Configurable for rotary or linear, single acting, air to open or air to close, very large to very small actuators, split range, custom characterization, precision linearization and more.Configuration and Cloning Tools: Clone configuration and alarm settings. DTM software allows easy uploading of anyLogix® 420 configuration. Newly installed Logix® 420 positioners can be configured exactly as the previous positioner, or edited as desired, with the simple click of a mouse.Vented Option: When using with compatible gas service use threaded exhaust ports to exhaust gas to a safe environment.2high visibility LEDs allow you to see status from a distance*. LCD Screen: With the optional LCD screen, quickly use advanced functions and view the system status in 8 languages. The main LCD view shows command and position and other important information using icons and scrolling status lines – all visible without removing the cover. Directional buttons allow you to navigate the menu to locate detailed information and perform commonly used functions.ValveSight TM DTM Software: Intuitive DTM software provides a powerful user interface for all positioner commissioning, monitoring and diagnostic functions and custom settings.*Only with the glass lens.The Logix® 420 User Interface ValveSight™ DTM Software3Accurate and Reliable ServiceHigh quality processes rely on accurate and reliable positioners. The Logix® 420 positioners are designed with the latest technology to support precise control and keep the positioner in service for years. Superior Control: Precision Easy to MaintainLogix® 420 positioners come with numerous diagnostic tools that allow the positioner to help pinpoint the root cause of an issue. Should the issue be in the positioner, the5Shown right:• New Embedded Code Features provide extensive diagnostics, helpful histograms, and detailed signatures• Intuitive Health Displays show issues and severity at a glance. Possible solutions to the root cause are at your fingertipsOverview of Current Alarms:View all current alarms, warnings and other states using the annunciator panels in the ValveSight™ DTM or scrolling status feature on the LCD. All alarms can be masked to allow easy management.Extensive Alarm History:A 200-event on-board history of all alarms, warnings and calibrations make it easy to see a progression of events.Possible Solutions: Every alarmincludes a concise statement of its meaning along with list of possible solutions. This can be found quickly in the Instruction Manual* or with a few clicks in the ValveSight™ DTM.*See document number LGENIM0106Data Monitor:The data monitor is a log for many positioner parameters and isdisplayed on the ValveSight™ DTM. It logs data over HARTcommunications and is used to view and track the current state of the valve system.Off-Line Analysis: Detailed off-line signatures help you determine which valves need repairs and prevent expensive unnecessary equipment maintenance andreplacement costs. Viewed with an intuitive, easy to use user interface, valve signatures are filled with detailed performance information. This allows maintenance engineers to pinpoint valves with potential issues during shut-down.• Ramp Tests evaluate thrustand friction values over a length of stroke.• Step Tests shows immediate responsiveness of the valve. • Partial Stroke Tests evaluates the responsiveness with pass/fail criteria. The positioner stores settings and results of the last 20 tests.• HDRL Tests determines hysteresis, deadband, repeatability, andlinearity with the click of a button. Using ValveSight™, print test reports, compare signatures, and export data.Modular Design: The Logix ® 420positioners are designed to withstand the severe environments. Should a problem arise, service is easy with a modular design that requires simple tools. Replacement kits are available for circuit boards.Easy Return Policy: Logix ® 420positioners are warranted for 1 year from the time of shipment.See Flowserve Worldwide Terms and Conditions of Sale for restrictions and details.6fully functional DD. They work with handheld communicators and all major Distributed Control Systems (DCS).* AMS Snap-OnTM also available.indicates root cause of active alarm or warning.show the current status ofshow detailed alarm status, list implications and possible solutions and allow you to configure the alarm limits.• ValveSight™ DTM On-Line Diagnostics pages allow you to monitor and logthe positioner sensors, see long term trends and configure the continuous• ValveSight™ DTM Off-Line Diagnostics pages allow you to run Ramp,HART 6 or 7 Protocols• V alveSight and Logix® 420 Positioners supportHART 6 and 7 protocols.• L ogix® 420 positioners are shipped standardwith HART 6.• E asily change protocols with the flip of a switch.7How to Order* Not for use below -30°C ** W hen viewing the front of the positioner, the feedback shaft spring bias is as follows: D - counterclockwiseR - clockwiseValtek ® GSThe Valtek ® GS product line is low cost, compact and light w eight.Yet, it is rugged and can be used safely and confidently in a wide range of less-than-critical applications plant-wide. Its modularity provides trim and material options to suit most service situations with off-the-shelf availability. Simplicity of design reduces maintenance and parts inventory costs.For more information see document number VLENTB0300Optimal Control Valve – Logix ® 420 CombinationsDue to continuous development of our product range, we reserve the right to alter the dimensions and information contained in this leaflet as required. Information given in this leaflet is made in good faith and based upon specific testing but does not, however, constitute a guarantee. Flowserve Headquarters5215 N. O'Connor Blvd. Suite 2300 Irving, Tx. 75039Phone: +1 972 443 6500 Flowserve CorporationFlow Control1350 N. Mt. Springs Parkway Springville, UT 84663 USA Phone: +1 801 489 8611Fax: +1 801 489 3719 Flowserve S.A.S.12, avenue du QuebecB.P. 64591965 Courtaboeuf Cedex France Phone: +33 (0) 1 60 92 32 51 Fax: +33 (0) 1 60 92 32 99 Flowserve Pte Ltd.12 Tuas Avenue 20Singapore 638824SingaporePhone:+ 65 6868 4600Fax: +65 6862 4940 Flowserve Australia Pty Ltd.14 Dalmore DriveScoresby, Victoria 3179 Australia Phone: +61 7 32686866Fax: +61 7 32685466 Flowserve Ltda .Rua Tocantins, 128São Caetano do Sul, SP 09580-130 BrazilPhone: +55 11 2169 6300Fax: +55 11 2169 6313 Flowserve Control Valves GmbH Control Valves - Villach Operation Kasernengasse 69500 Villach AustriaPhone: +43 (0)4242 41181 0 Fax: +43 (0)4242 41181 50 Flowserve (China)585, Hanwei Plaza7 Guanghau RoadBeijing, China 100004Phone: +86 10 6561 1900 Flowserve India ControlsPvt. Ltd Plot # 4, 1A, E.P.I.P, Whitefield Bangalore Kamataka India 560 066Phone: +91 80 284 10 289 Fax: +91 80 284 10 286 Flowserve Essen GmbH Schederhofstr. 7145145 Essen Germany Phone: +49 (0)201 8919 5 Fax: +49 (0)201 8919 662Kämmer Valves inc.1300 Parkway View Drive Pittsburgh, Pa 15205 USA Tel.: +1 412 787 8803Fax: +1 412 787 1944NAF AbGelbgjutaregatan 2• For more information simply click on the QR Code.。
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DS99181B(12/05)Features•International standard packages •Guaranteed Short Circuit SOA capability •Low V CE(sat)-for low on-state conduction losses •High current handling capability •MOS Gate turn-on -drive simplicity•Fast fall time for switching speeds up to 20 kHz Applications•AC motor speed control•Uninterruptible power supplies (UPS)•Welding Advantages •High power densityIXSA 20N60B2D1IXSP 20N60B2D1High Speed IGBTShort Circuit SOA CapabilitySymbol Test Conditions Maximum RatingsV CES T J = 25°C to 150°C600V V CGR T J = 25°C to 150°C; R GE = 1 M Ω600V V GES Continuous ± 20V V GEM Transient ± 30V I C25T C = 25°C 35A I C110T C = 110°C 20A I F(110)11A I CMT C = 25°C, 1 ms60A SSOA V GE = 15 V, T J = 125°C, R G = 82Ω I CM = 32A(RBSOA)Clamped inductive load@ 0.8 V CESt SCV GE = 15 V, V CE = 360 V, T J = 125°C 10μs (SCSOA)R G = 82 Ω, non repetitive P C T C = 25°C190W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°CWeight2 g Maximum lead temperature for soldering 300°C 1.6 mm (0.062 in.) from case for 10 sMaximum tab temperature for soldering for 10s 260°CSymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min.typ.max.BV CES I C = 250 μA, V GE = 0 V 600V V GE(th)I C= 750 μA, VCE = V GE3.56.5V I CES V CE= V CES 85μA V GE = 0 VT J = 125 °C0.6mA I GES V CE = 0 V, V GE = ± 20 V ± 100nA V CE(sat)I C= 16A, V GE = 15 V2.5VPreliminary Data SheetV CES =600 V I C25=35 A V CE(sat)= 2.5 VG = Gate C = Collector E = Emitter TAB = CollectorTO-220 (IXSP)C (TAB)© 2004 IXYS All rights reservedC (TAB)GCTO-220 (IXSA)Reverse Diode (FRED)Characteristic Values(T J = 25°C, unless otherwise specified)SymbolTest Conditions min.typ.max.V F I F = 10A, V GE = 0 VT J =150°C1.66V2.66V I RM I F = 12A, V GE = 0 V, -di F /dt = 100 A/μs T J =100°C 1.5A t rr V R = 100 V T J =100°C 90ns t rr I F = 1 A; -di/dt = 100 A/μs; V R = 30 V 30ns R thJC2.5K/WSymbolTest ConditionsCharacteristic Values(T J = 25°C, unless otherwise specified)min. typ. max.g fs I C = 16A; V CE = 10 V, Note 13.57.0S C ies 800pF C oes V CE = 25 V, V GE = 0 V 76pF f = 1 MHz20N60B2D190pF C res 28pF Q g 33nC Q ge I C = 16A, V GE = 15 V, V CE = 0.5 V CES 12nC Q gc 12nC t d(on)30ns t ri 30ns t d(off)116ns t fi 126ns E off 380600μJ t d(on)30ns t ri 30ns E on 20N60B20.12mJ 20N60B2D10.42mJ t d(off)180ns t fi 210ns E off 970μJR thJC 0.66K/W R thCS0.3K/WInductive load, T J = 25°CI C = 16A, V GE = 15 VV CE = 0.8 V CES , R G = 10 ΩSwitching times may increase for V CE (Clamp) > 0.8 • V CES , higher T J or increased R GInductive load, T J = 125°CI C = 16 A, V GE = 15 V V CE = 0.8 V CES , R G = 10 ΩSwitching times may increase for V CE (Clamp) > 0.8 • V CES , higher T J or increased R GTO-220 AB (IXSP) Outlinelimeter InchesMin.Max.Min.Max.A 12.7013.970.5000.550B 14.7316.000.5800.630C 9.9110.660.3900.420D 3.54 4.080.1390.161E 5.85 6.850.2300.270F 2.54 3.180.1000.125G 1.15 1.650.0450.065H 2.79 5.840.1100.230J 0.64 1.010.0250.040K 2.54BSC 0.100BSC M 4.32 4.820.1700.190N 1.14 1.390.0450.055Q 0.350.560.0140.022R2.29 2.790.0900.110Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %IXYS MOSFETs and IGBTs are covered by 4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,585 one or moreof the following U.S. patents:4,850,0725,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405B26,759,6924,881,1065,034,7965,187,1175,486,7156,306,728 B16,583,5056,710,4636771478 B2limeter Inches Min.Max.Min.Max.A 4.06 4.83.160.190A1 2.03 2.79.080.110b 0.510.99.020.039b2 1.14 1.40.045.055c 0.460.74.018.029c2 1.14 1.40.045.055D 8.649.65.340.380D17.118.13.280.320E 9.6510.29.380.405E1 6.868.13.270.320e 2.54BSC .100BSC L 14.6115.88.575.625L1 2.29 2.79.090.110L2 1.02 1.40.040.055L3 1.27 1.78.050.070L400.380.015R0.460.74.018.029TO-263 (IXSA) OutlineIXYS MOSFETs and IGBTs are covered by 4,835,5924,881,106 5,017,5085,049,9615,187,117 5,381,0256,162,6656,306,728 B16,534,3436,683,344 one or moreof the following U.S. patents:4,850,0724,931,8445,034,7965,063,3075,237,4815,486,7156,259,123 B16,404,065 B16,583,5056,710,405B2IXYS reserves the right to change limits, test conditions, and dimensions.Fig. 20. Peak reverse current I RMFig. 19. Reverse recovery charge Q r Fig. 18. Forward current I F versus V F Fig. 21. Dynamic parameters Q r , I RMFig. 22. Recovery time t rr versus -di F /dt Fig. 23. Peak forward voltage V FR andFig. 24. Transient thermal resistance junction-to-caseConstants for Z thJC calculation:i R thi (K/W)t i (s)1 1.4490.005220.55780.0003NOTE: Fig. 18 to Fig. 23 shows typical values20060010004008004060801000.000010.00010.0010.010.110.0010.010.1110040801201600.00.51.01.52.0K f T VJC -di F /dtts 0200400600800100002040600.00.10.20.3V FRdi F /dtV 2006001000040080002468101001000050100150200250012351015202530I RMQ r I FA V F-di F /dt-di F /dtA/μs A VnC A/μs A/μs t rrns t frZ thJCA/μs μs I RMQ r分销商库存信息:IXYSIXSA20N60B2D1IXSP20N60B2D1。