SPP24N60C3中文资料
S3C2410中文手册第1章_产品综述
UART................................................................................................................................................ 4 DMA控制器 .....................................................................................................................................5 A/D转换和触摸屏接口 ...................................................................................................................5 LCD控制器STN LCD显示特性 ......................................................................................................5 TFT彩色显示屏 ............................................................................................................................... 5 看门狗定时器.................................................................................................................................. 5 IIC总线接口 ....................................................................................................................................6 IIS总线接口 .....................................................................................................................................6 USB主设备 ......................................................................................................................................6 SD主机接口 ..................................................................................................................................... 6 SPI接口 ............................................................................................................................................ 6 工作电压.......................................................................................................................................... 7 操作频率.......................................................................................................................................... 7 封装.................................................................................................................................................. 7 1.2 内部结构图....................................................................................................................................8 表 1－1 272－FBGA 引脚分配及顺序..........................................................................................9 表 1－2 272－FBGA封装的引脚分配..........................................................................................12 信号描述........................................................................................................................................ 21 表 1－3 S3C2410A信号描述.........................................................................................................21 表 1－4 S3C2410A 专用寄存器...................................................................................................25
243NQ100PBF资料
Document Number: 94171For technical questions, contact: ind-modules@Schottky Rectifier, 240 A243NQ100PbFVishay High Power ProductsFEATURES•175 °C T J operation •Low forward voltage drop •High frequency operation•Guard ring for enhanced ruggedness and long term reliability•Lead (Pb)-free•Designed and qualified for industrial levelDESCRIPTIONThe 243NQ.. high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature.Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters,freewheeling diodes, welding, and reverse battery protection.PRODUCT SUMMARYI F(AV)240 A V R100 VMAJOR RATINGS AND CHARACTERISTICSSYMBOL CHARACTERISTICSVALUES UNITS I F(AV)Rectangular waveform240A V RRM 100V I FSM t p = 5 µs sine 25 500A V F 240 Apk, T J = 125 °C 0.72V T JRange- 55 to 175°CVOLTAGE RATINGSPARAMETERSYMBOL243NQ100PbFUNITS Maximum DC reverse voltageV R 100VMaximum working peak reverse voltageV RWMABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOL TEST CONDITIONSVALUES UNITSMaximum average forward current See fig. 5I F(AV)50 % duty cycle at T C = 132 °C, rectangular waveform 240A Maximum peak one cycle non-repetitive surge current See fig. 7I FSM 5 µs sine or 3 µs rect. pulseFollowing any rated load condition and with rated V RRM applied25 50010 ms sine or 6 ms rect. pulse 3300Non-repetitive avalanche energy E AS T J = 25 °C, I AS = 5.5 A, L = 1 mH15mJ Repetitive avalanche currentI ARCurrent decaying linearly to zero in 1 µsFrequency limited by T J maximum V A = 1.5 x V R typical1A 元器件交易网 For technical questions, contact: ind-modules@Document Number: 94171243NQ100PbFVishay High Power Products Schottky Rectifier, 240 ANote(1)Pulse width = 500 µsELECTRICAL SPECIFICATIONSPARAMETER SYMBOLTEST CONDITIONSV ALUES UNITSMaximum forward voltage drop See fig. 1V FM (1)240 AT J = 25 °C 0.95V 480 A 1.26240 A T J = 125 °C 0.72480 A0.85Maximum reverse leakage current See fig. 2I RM T J = 25 °C V R = Rated V R6mA T J = 125 °C80Maximum junction capacitance C T V R = 5 V DC (test signal range 100 kHz to 1 MHz) 25 °C 5500pF Typical series inductance L S From top of terminal hole to mounting plane 5.0nH Maximum voltage rate of change dV/dtRated V R10 000V/µs THERMAL - MECHANICAL SPECIFICATIONSPARAMETERSYMBOL TEST CONDITIONSVALUES UNITS Maximum junction and storage temperature range T J , T Stg - 55 to 175°CMaximum thermal resistance,junction to caseR thJC DC operation See fig. 40.19°C/WTypical thermal resistance, case to heatsink R thCSMounting surface, smooth and greased0.05Approximate weight 30g 1.06oz.Mounting torque minimum Non-lubricated threads3 (26.5)N ⋅ m (lbf ⋅ in)maximum 4 (35.4)Terminal torque minimum 3.4 (30)maximum5 (44.2)Case styleHALF-PAK module元器件交易网Document Number: 94171For technical questions, contact: ind-modules@243NQ100PbFSchottky Rectifier, 240 AVishay High Power ProductsFig. 1 - Maximum Forward Voltage Drop CharacteristicsFig. 2 - Typical Values of Reverse Current vs.Reverse VoltageFig. 3 - Typical Junction Capacitance vs. Reverse VoltageFig. 4 - Maximum Thermal Impedance Z thJC Characteristics元器件交易网 For technical questions, contact: ind-modules@Document Number: 94171243NQ100PbFVishay High Power Products Schottky Rectifier, 240 AFig. 5 - Maximum Allowable Case Temperature vs.Average Forward CurrentFig. 7 - Maximum Non-Repetitive Surge CurrentFig. 8 - Unclamped Inductive Test CircuitNote(1)Formula used: T C = T J - (Pd + Pd REV ) x R thJC ;Pd = Forward power loss = I F(AV) x V FM at (I F(AV)/D) (see fig. 6);Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = Rated V R元器件交易网元器件交易网Schottky Rectifier, 240 A Vishay High Power ProductsORDERING INFORMATION TABLELINKS TO RELATED DOCUMENTSDimensions /doc?95020Document Number: 94171For technical questions, contact: ind-modules@ Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网Document Number: 。
20N60C3某德国品牌仪器电源场效应管(免费)
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TOPSWITCH 242芯片在旅行充电器开关电路中的应用
TOPSWITCH 242芯片在旅行充电器开关电路中的应用肖已文【摘要】TOPSWITCH 242保护芯片在旅行充电器中的应用,有效的增加了产品的使用性能和安全性能,通过传统开关电路和带TOPSWITCH 242保护芯片的电路对比,阐释了新型开关电路的优势.【期刊名称】《电子制作》【年(卷),期】2015(000)017【总页数】3页(P56-57,64)【关键词】OPSWITCH 242;旅行充电器;安全【作者】肖已文【作者单位】苏州UL美华认证有限公司【正文语种】中文引言随着电子产品的的功能越来越强大，普及率也越来越高，便携式电子产品的应用逐渐渗透在我们的日常生活当中，由于是便携式设备，其电力的来源都是电池，这也是这两年电池作为新能源得到井喷式发展的原因。
同样，和电池配对的，旅行充电器的开关电源，也有无限的前景。
随着人们对安全，环境，能源意识理念的不断提高，对旅行充电器开关电源的设计也越来越高，不能仅仅满足在能充电，而且，充电要安全，节能，不污染。
因此，有必要对充电电路进行革新，以满足工业发展和大众生活的需要。
常规低功率开关电路的设计一直以来，对于10W 左右的低功率旅行充电器，其设计也可谓成熟，下面是它的典型设计电路模型。
鉴于目前的设计都是使用开关电路，这里只对保护电路做阐述。
图1 常规低功率开关电路的设计图中的保护器件有MOS 管，芯片IC 和敏感电阻Rs。
做如下模拟失效来验证电路的可靠性。
1.短路敏感电阻Rs。
通常这个电阻都在10 欧以内。
当Rs短路时，Q管的电压升高，IC过压保护。
电路输出切断。
保证产品的使用者安全。
2.短路MOS 管的D 脚和S 脚。
高电压直接引入到地端，MOS 管因为承受不了这么大电压，直接烧毁。
电路失效，旅行充电器烧毁。
上面电路的设计，有效的做到了产品使用者的安全使用性，但在性能方面有缺陷。
其中，最大的缺陷就是产品如果运用不当，产品会直接坏掉,给使用者带来极大的麻烦。
SPI20N60C3中文资料
VDD=380V, VGS=0/13V, ID=20.7A, RG=3.6Ω, Tj=125 VDD=380V, VGS=0/13V, ID=20.7A, RG=3.6Ω
Values
Unit
min. typ. max.
- 17.5 - S
- 2400 - pF
0.00769 K/W Cth1
0.015
Cth2
0.029
Cth3
0.163
Cth4
0.323
Cth5
2.526
Cth6
Value
Unit
SPP_B_I
SPA
0.0003763 0.0003763 Ws/K
0.001411 0.001411
0.001931 0.001931
0.005297 0.005297
Marking 20N60C3 20N60C3 20N60C3 20N60C3
Maximum Ratings Parameter
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
- 700
breakdown voltage
-V -
Gate threshold voltage Zero gate voltage drain current
VGS(th) I DSS
ID=1000µA, VGS=VDS 2.1
VDS=600V, VGS=0V,
Tj=25°C
瓷介电容24
瓷介电容24瓷介电容24是一种常见的电子元器件，它广泛应用于各种电子设备中。
下面将从以下几个方面对瓷介电容24进行详细介绍。
一、瓷介电容24的基本概念瓷介电容24是一种以陶瓷为介质的电容器，其名称中的“24”代表其最大工作电压为24伏特。
该类型的电容器具有高稳定性、低失真、高频响应等优点，因此被广泛应用于各种高精度、高稳定性的电路中。
二、瓷介电容24的结构和工作原理瓷介电容24由两个金属片（称为极板）和一个陶瓷薄片（称为介质）组成。
当两个极板之间施加一个电压时，它们之间就会形成一个带有等效电容值的电场。
这个等效电容值就是瓷介电容器的参数之一。
三、瓷介电容24的特性参数除了等效电容值外，还有其他几个重要参数需要了解：1. 工作温度范围：-55℃~+125℃。
2. 额定工作电压：最大可承受的工作电压。
3. 额定容量：指在额定工作电压下，瓷介电容器的实际容量。
4. 介质损耗角正切：介质中的能量损耗，通常用正切角度来表示。
5. 绝缘电阻：指在额定工作电压下，两个极板之间的绝缘电阻值。
四、瓷介电容24的应用领域瓷介电容24广泛应用于各种高精度、高稳定性的电路中，如：1. 模拟滤波器和放大器：由于瓷介电容器具有低失真和高频响应等特点，因此非常适合用于模拟滤波器和放大器中。
2. 高精度振荡器：由于瓷介电容器具有高稳定性和低温漂移等特点，因此非常适合用于高精度振荡器中。
3. 数字信号处理器：由于瓷介电容器具有高速响应和低失真等特点，因此非常适合用于数字信号处理器中。
五、如何选择合适的瓷介电容24选择瓷介电容24时需要考虑以下几个方面：1. 工作温度范围：根据实际应用环境选择合适的工作温度范围。
2. 额定工作电压：根据实际应用电路的需求选择合适的额定工作电压。
3. 额定容量：根据实际应用电路的需求选择合适的额定容量。
4. 介质损耗角正切：根据实际应用环境和要求选择合适的介质损耗角正切值。
5. 绝缘电阻：根据实际应用环境和要求选择合适的绝缘电阻值。
SPW24N60C3中文资料
SPW24N60C3Parameter Symbol Conditions Unitmin.typ.max. Thermal characteristicsThermal resistance, junction - case R thJC--0.52K/WR thJA leaded--62Soldering temperature T sold 1.6 mm (0.063 in.)from case for 10 s--260°CElectrical characteristics, at T j=25 °C, unless otherwise specifiedStatic characteristicsDrain-source breakdown voltage V(BR)DSS V GS=0 V, I D=250 µA600--V Avalanche breakdown voltage V(BR)DS V GS=0 V, I D=24.3 A-700-Gate threshold voltage V GS(th)V DS=V GS, I D=1.2 mA 2.13 3.9Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V,T j=25 °C-0.11µAV DS=600 V, V GS=0 V,T j=150 °C--100Gate-source leakage current I GSS V GS=20 V, V DS=0 V--100nADrain-source on-state resistance R DS(on)V GS=10 V, I D=15.4 A,T j=25 °C-0.140.16ΩV GS=10 V, I D=15.4 A,T j=150 °C-0.34-Gate resistance R G f=1 MHz, open drain-0.7-Transconductance g fs |V DS|>2|I D|R DS(on)max,I D=15.4 A-24-SValuesThermal resistance, junction - ambientSPW24N60C3Parameter Symbol Conditions Unitmin.typ.max. Dynamic characteristicsInput capacitance C iss-2800-pF Output capacitance C oss-930-Reverse transfer capacitance C rss-66-Effective output capacitance, energyrelated3)C o(er)-114-Effective output capacitance, timerelated4)C o(tr)-204-Turn-on delay time t d(on)-13-ns Rise time t r-21-Turn-off delay time t d(off)-73-Fall time t f-6-Gate Charge CharacteristicsGate to source charge Q gs-15-nC Gate to drain charge Q gd-49-Gate charge total Q g-105137Gate plateau voltage V plateau- 5.4-V4)Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.ValuesV GS=0 V, V DS=25 V,f=1 MHzV DD=480 V,V GS=10 V, I D=24.3 A,R G=3.3 ΩV DD=480 V,I D=24.3 A,V GS=0 to 10 VV GS=0 V, V DS=0 Vto 480 V1) Pulse width limited by maximum temperature Tj,maxonly2) Repetitive avalanche causes additional power losses that can be calculated as PAV=E AR*f.3)Co(er)is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.SPW24N60C3 Definition of diode switching characteristicsP-TO247: OutlineDimensions in mmSPW24N60C3 Published byInfineon Technologies AGBereich KommunikationSt.-Martin-Straße 53D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered aswarranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list).WarningsDue to technical requirements, components may contain dangerous substances.For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonablybe expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implantedin the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,it is reasonable to assume that the health of the user or other persons may be endangered.。
ZWS240PAF-24S中文资料(DENSEI-LAMBDA)中文数据手册「EasyDatasheet - 矽搜」
2 year warranty
型号名称
ZWS 100AF-5/
Series Name
Option
Output Power
Active Filter contained
Output Voltage
特征
marking (Low Voltage Directive) Active Filter contained, PFHC type Applicable to peakoutput wattage 120% (12V, 15V, 24V output) Low leakage current 0.5mA max Equipped with Remote ON/OFF control (with-cover type excluded) and output variable voltage 2 year warranty
产品阵容
Model name ZWS50AF ZWS75AF ZWS100AF ZWS150AF
ZWS50AF-5 ZWS50AF-12 ZWS50AF-15 ZWS50AF-24 ZWS75AF-5
ZWS75AF-12 ZWS75AF-15 ZWS75AF-24 ZWS100AF-5 ZWS100AF-12 ZWS100AF-15
芯片中文手册,看全文,戳
ZWS-AF -系列
单路输出50W〜150W
(Low Voltage Directive)
技术指标
1.输 入 电 压 范 围 2.功 率 因 数 3,输 出 电 压 范 围 4.冷 却 5.工 作 环 境
温度 （标准安装）
6.耐 压 7.安 全 标 准 8. CE标志 9. EMI 10.免 疫 11. PFHC 12.函 数
24C64中文资料_数据手册_参数
5.3 Read Identification Page (M24C64-D only) . . . . . . . . . . . . . . . . . . . . . . . 21 5.4 Read the lock status (M24C64-D only) . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5.1.2 Page Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.1.3 Write Identification Page (M24C64-D only) . . . . . . . . . . . . . . . . . . . . . . 18
5.1 Write operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.1.1 Byte Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
24N60C3中文资料
SPW24N60C3Parameter Symbol Conditions Unitmin.typ.max. Thermal characteristicsThermal resistance, junction - case R thJC--0.52K/WR thJA leaded--62Soldering temperature T sold 1.6 mm (0.063 in.)from case for 10 s--260°CElectrical characteristics, at T j=25 °C, unless otherwise specifiedStatic characteristicsDrain-source breakdown voltage V(BR)DSS V GS=0 V, I D=250 µA600--V Avalanche breakdown voltage V(BR)DS V GS=0 V, I D=24.3 A-700-Gate threshold voltage V GS(th)V DS=V GS, I D=1.2 mA 2.13 3.9Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V,T j=25 °C-0.11µAV DS=600 V, V GS=0 V,T j=150 °C--100Gate-source leakage current I GSS V GS=20 V, V DS=0 V--100nADrain-source on-state resistance R DS(on)V GS=10 V, I D=15.4 A,T j=25 °C-0.140.16ΩV GS=10 V, I D=15.4 A,T j=150 °C-0.34-Gate resistance R G f=1 MHz, open drain-0.7-Transconductance g fs |V DS|>2|I D|R DS(on)max,I D=15.4 A-24-SValuesThermal resistance, junction - ambientSPW24N60C3Parameter Symbol Conditions Unitmin.typ.max. Dynamic characteristicsInput capacitance C iss-2800-pF Output capacitance C oss-930-Reverse transfer capacitance C rss-66-Effective output capacitance, energyrelated3)C o(er)-114-Effective output capacitance, timerelated4)C o(tr)-204-Turn-on delay time t d(on)-13-ns Rise time t r-21-Turn-off delay time t d(off)-73-Fall time t f-6-Gate Charge CharacteristicsGate to source charge Q gs-15-nC Gate to drain charge Q gd-49-Gate charge total Q g-105137Gate plateau voltage V plateau- 5.4-V4)Co(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.ValuesV GS=0 V, V DS=25 V,f=1 MHzV DD=480 V,V GS=10 V, I D=24.3 A,R G=3.3 ΩV DD=480 V,I D=24.3 A,V GS=0 to 10 VV GS=0 V, V DS=0 Vto 480 V1) Pulse width limited by maximum temperature Tj,maxonly2) Repetitive avalanche causes additional power losses that can be calculated as PAV=E AR*f.3)Co(er)is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.SPW24N60C3 Definition of diode switching characteristicsP-TO247: OutlineDimensions in mmSPW24N60C3 Published byInfineon Technologies AGBereich KommunikationSt.-Martin-Straße 53D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered aswarranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list).WarningsDue to technical requirements, components may contain dangerous substances.For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonablybe expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implantedin the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,it is reasonable to assume that the health of the user or other persons may be endangered.。
PSD24C中文资料
PSD03thruPSD24CST ANDARD CAP ACIT ANCE TVS ARRA YOnly One Name Means ProTek’Tion™APPLICA TIONS✔ Laptop Computers✔ Cellular Phones ✔ Digital Cameras✔ Personnal Digital Assistant (PDA)IEC COMP A TIBILITY (EN61000-4)✔ 61000-4-2 (ESD): Air - 15kV , Contact - 8kV ✔ 61000-4-4 (EFT): 40A - 5/50ns✔ 61000-4-5 (Surge): 24A, 8/20µs - Level 2(Line-Ground) & Level 3(Line-Line)FEA TURES✔ Unidirectional: 500 Watts Peak Pulse Power per Line (tp = 8/20µs)✔ BidirectionalL 400 Watts Peak Pulse Power per Line (tp = 8/20µs)✔ Unidirectional & Bidirectional Configurations ✔ Replacement for MLV (0805)✔ Protects One Power or I/O Port ✔ ESD Protection > 40 kilovolts ✔ Low Clamping Voltage✔ Available in Multiple Voltage Types Ranging from 3V to 24V MECHANICAL CHARACTERISTICS✔ Molded JEDEC SOD-323✔ Weight 10 milligrams (Approximate)✔ Flammability Rating UL 94V-0✔ 8mm Tape and Reel Per EIA Standard 481✔ Device Marking: Marking Code & Polarity Band (Unidirectional Only)05118PIN CONFIGURA TIONSSOD-323UNIDIRECTIONALBIDIRECTIONALPSD24CDEVICE CHARACTERISTICSMAXIMUM RATINGS @ 25°C Unless Otherwise SpecifiedUndirectional: Peak Pulse Power (t p = 8/20µs) - See Fig. 1Operating T emperature SYMBOL VALUE -55°C to 150°C°C°C -55°C to 150°C Watts UNITS 500T J P PP T STGPARAMETERStorage T emperatureBidirectional: Peak Pulse Power (t p = 8/20µs) - See Fig. 1Watts 400P PP Note 1: Part numbers with an additional “C” suffix are bidirectional devices, i.e., PSD05C.Note 2: For Bidirectional Devices Only: Electrical characteristics apply in both directions.ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless Otherwise SpecifiedPART NUMBER (See Notes 1-2)DEVICE MARKINGMINIMUM BREAKDOWN VOLTAGE@ 1mA V (BR)VOLTS MAXIMUM CLAMPING VOLTAGE (See Fig. 2)@ I P = 1AV C VOLTS MAXIMUM CLAMPING VOLTAGE (See Fig. 2)@8/20µs V C @ I PP TYPICAL CAPACITANCE@0V , 1 MHzC J pFPSD03PSD03C PSD05PSD05C PSD08PSD08C PSD12PSD12C PSD15PSD15C PSD18PSD18C PSD24PSD24C PSD36PSD36CA GB HC JD KE L G NF M R T4.04.06.06.08.58.513.313.316.716.720.020.026.726.740.040.06.57.09.89.813.413.419.019.024.024.029.029.043.043.060.060.010.9V @ 43.0A 10.9V @ 39.0A 13.5V @ 42.0A 14.5V @ 28.0A 16.9V @ 34.0A 18.5V @ 17.0A 25.9V @ 21.0A 29.5V @ 14.0A 30.0V @ 17.0A 33.0V @ 12.0A 40.0V @ 9.0A 40.0V @ 9.0A 49.0V @ 12.0A 46.2V @ 9.0A 75.0V @ 5.0A 75.0V @ 5.0A5002003501752501501505010040904088407535MAXIMUM LEAKAGE CURRENT@V WMI D µA 125125101010101111111111RATED ST AND-OFF VOLTAGEV WM VOLTS3.33.35.05.08.08.012.012.015.015.018.018.024.024.036.036.0PSD24CFIGU RE 50 1 2 3 4 5 6V R - Reverse Voltage - VoltsC - C a p a c i t a n c e - p F100200300400FIGU RE 2FIGU RE 1PEAK PULSE POWER VS PULSE TIME0.01 1 10 100 1,000 10,000t d - Pulse Duration - µs0 5 10 15 20 25 30t - Time - µs20406080100120I P P - P e a kP u l s e C u r r e n t - % o f I P P101001,00010,000P P P - P e ak P u l s e C u r r e n t - W a t t sGRAPHSFIGU RE 4OVERSHOOT & CLAMPING VOLTAGE FOR PSD03ESD Test Pulse: 25 kilovolt, 1/30ns (waveform)5 V o l t s p e r D i v i s i o n-55152535T L - Lead Temperature - °C20406080100% O f R a t e d P o w e rFIGU RE 3PSD24CCOPYRIGHT © ProTek Devices 2003SPECIFICATIONS: ProT ek reserves the right to change the electrical and or mechanical characteristics described herein without notice (except JEDEC).DESIGN CHANGES: ProT ek reserves the right to discontinue product lines without notice, and that the final judgement concerning selection and specifications is the buyer’s and that in furnishing engineering and technical assistance, ProTek assumes no responsibility with respect to the selection or specifications of such products.P ACKAGE OUTLINE & DIMENSIONSProTek Devices2929 South Fair Lane, Tempe, AZ 85282Tel: 602-431-8101 Fax: 602-431-2288E-Mail: sales@ Web Site: 。
PNOZ s30 24-240VACDC 2 n o 2 n c 750330说明书
CE;cULus Listed;EAC (Eurasian);TÜV;CCC Supervisión de revoluciones;Supervisión de parada monocanal;Rearme automático;bicanal;Rearme manual;Rearme manual con superv. EN 1088;EN 60204-1;EN 62061;EN ISO 10218-1;EN ISO 13849-1;VDI 2854 24,0 - 240,0 AC/DC Borne de tornillo 4.0 A 45.0 mm 98.0 mm 120.0 mm 425 g 405 g -20 - 55 °C
PNOZ msi1Ap Adapter Si/Ha 25/25 2,5m PNOZ msi1Bp Adapter Si/Ha 25/25 2,5m PNOZ msi3Ap Adapter Si/Ha 15/15 2,5m PNOZ msi3Bp Adapter Si/Ha 15/15 2,5m PNOZ msi1AP Adapter Si/Ha 25/25 5m PNOZ msi b4 Box PNOZ msi10p Adapter Cable 2,5m PNOZ msi11p Adapter Cable 1,5m PNOZ msi 9p adapter cable 5m
Accesorios opcionales
773839
PNOZ msi1 Bp Adapter Si/Ha 25/25 5m
Pilz GmbH & Co. KG, Felix-Wankel-Strasse 2, 73760 Ostfildern, Germany
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Bose ControlSpace SP-24 音频处理器技术参数表说明书
TECHNICAL DATA SHEETProduct OverviewThe Bose ® ControlSpace ® SP-24 sound processor makesoptimizing 2x4 installed and portable sound systems easy.Use the purposefully simple front panel interface for basicoperations, or the intuitive SP-24 Editor software for fullaccess to all signal processing settings.Product Information While many loudspeaker controllers offer complicated user interfaces, the SP-24 processor keeps the front panel interface simple with basic preset/scene recall and gain/delay operations. For full system access, the straightforward and intuitive SP-24 Editor software provides access to all signal processing settings and signal routing, whether connected live or offline. Scenes created with the SP-24Editor software can be saved locally to a PC or, using a USB connection, stored in the SP-24 processor hardware. Full access includes custom channel routing, input and output 9-band equalization, band pass filters, delays, peak limiter,gain and polarity control. Custom loudspeaker EQ curves can be created or Bose professional loudspeaker EQs can be recalled for quick, optimized setup. The hardware includes standard XLR connectors to easily connect to balanced pro-level source devices, amplifiers and powered loudspeakers.ApplicationsDesigned for a wide range of applications, including:•Auditoriums •Houses of worship •Live music performances •Restaurants and bars •Retail stores •Auxiliary zonesKey Features •Real-time control, and the ability to program and store custom scenes with the easy-to-use SP-24 Editor software •SP-24 Editor software provides complete access to all signal processing functions including custom channel routing, inputand output 9-band dual equalization, band pass filters, delays,peak limiter, gain and signal polarity for full system control•Simplified front panel LCD menus and controls arepurposely designed to make it easier to select preprogrammedscenes, gain and delay parameters, or quickly access Bose®loudspeaker presets•USB port enables plug-and-play PC access for systemconfiguration, programming, signal level monitoring andfirmware updates using the SP-24 Editor software•Extensive Bose professional loudspeaker library enablesquick access to factory-created equalization curves while theSP-24 Editor software provides intuitive graphical tools foroptimizing any passive or powered loudspeaker•XLR inputs (2) and outputs (4) for balanced connectivity toprofessional audio gear•Signal and clip LED indicators show the signal status of theinput channels•Front panel lockout feature prevents unauthorized useTechnical SpecificationsTECHNICAL DATA SHEET Audio Performance SpecificationsFrequency Response20 Hz - 20 kHz (+0/-1 dB)THD+N0.015 % (typical)Channel Separation (Crosstalk)100 dB (typical)Dynamic Range107 dB (typical)Integrated DSPAudio Latency 1.52 msA/D and D/A Converters24-bitSample Rate48 kHzMaximum Output Delay170 msAudio InputsInput Channels 2 channelsInputs 2 analog, balanced, differentialMaximum Input Level+18 dBuConnectors, Input XLRInput Impedance Differential 2.2 kΩ @ 1 kHzSensitivity Selectable: 0/+6/+18 dBuAudio OutputsOutputs 4 analog, balanced, differentialConnectors, Output XLROutput Impedance Differential 200 ΩMaximum Output Level+18 dBuIndicators and ControlsAudio Indicators Input signal present (Green LED)Input signal clip at 0 dBFS (Red LED)Electrical SpecificationsMains Voltage100 VAC - 240 VAC (+/- 10%, 50/60 Hz)AC Power Consumption15 WAC Mains Standard IEC (C14)Power Dissapation52 BTU (13.1 kcal)PhysicalRack Space Units1RUDimensions 1.8" H x 19" W x 8.6" D (45 mm x 483 mm x 218 mm)Net Weight 5.9 lb (2.7 kg)Shipping Weight8.6 lb (3.9 kg)Operating Temperature32 °F - 113 °F (0 °C - 45 °C)Storage Temperature-40 °F - 158 °F (-40 °C - 70 °C)Humidity95% relative humidity, maximumGeneralCommunication Port USB Type B (rear panel), PC interfaceTECHNICAL DATA SHEET1.Off/On switch: Turns the product off or on2.Display: 2 x 16 backlit LCD display shows presets, scenes and parameter values3.Navigation controls: 4 pushbuttons allow navigation of the user interface4.SELECT/LOAD control: Pushbutton loads presets and custom scenes. Saves Utility Menu parameters5.SIGNAL/CLIP LEDs: Illuminates to show signal and clipping (0 dBFS) indication for each input channel6.Removable rack ears: For use when installing into rack mount enclosures1.INPUTS A/B: Balanced XLR inputs, +18 dBu max2.OUTPUTS 1 – 4: Balanced XLR outputs, +18 dBu maxB Port: Type B USB port for optional connection to a personal computer running the ControlSpace SP-24 Editor software4.Input power: Power cord inputTECHNICAL DATA SHEETMechanical DiagramsTECHNICAL DATA SHEET All information subject to change without notice.® 2012 Bose Corporation All trademarks are those of their respective owners.Architects’ and Engineers’SpecificationsThe unit shall be a 2-input, 4-output standalone sound processor using a floating point digital signal processing architecture running at a 48 kHz sample rate with 24-bit A/D and D/A converters. Total latency through the unit, analog input to analog output shall total1.52 milliseconds. The processor shall run the following signal processing algorithms: 9-band parametric equalization, routing,band pass crossover, signal delay and peak limiting.Input and output connections shall utilize XLR type connectors.Each input shall be a balanced, differential circuit with an input impedance of2.2 kilohm capable of accepting input signals up to +18 dBu. Each output shall be a balanced, differential circuit with an output impedance of 200 ohms capable of delivering a signal level up to +18 dBu.The frequency response shall be +0/-1 dB from 20 Hz to 20 kHz.The dynamic range shall be 107 dB (typical) from 20 Hz to 20kHz. The THD shall be < 0.015% (typical). Crosstalk shall be <-100 dB (typical).The processor shall include a front panel user interface consisting of a 2x16 blue backlit LCD display, and four navigation buttons.The front panel interface shall allow for the selection of predefined routing configurations and selection of loudspeaker equalization for Bose® professional loudspeakers. The front panel interface shall include the ability to recall custom scenes that are stored in the unit. The front panel interface shall provide access to the following functions: input level, output level, loudspeaker equalization preset and signal delay (per output channel). The processor shall have a maximum signal delay capability of 170 milliseconds per output channel. The front panel interface shall provide a user lockout function and firmware upgrade mode. The processor shall include a Type B USB connector for connection to a personal computer for the purposes of signal processing configuration and firmware updates. The control software shall provide access to signal routing and the following signal processing functions: input level, input equalization, signal routing, output band pass, output loudspeaker equalization,output equalization, output delay, output limiting, and output polarity and level. The control software shall provide the ability to create and store custom configurations within the processor which can be recalled via the software or front panel interface.The control software shall provide input and output metering with 48 dB of signal range.The processor shall have a universal auto switching power supply capable of accepting input voltages from 100 VAC to 240 VAC, 50Hz to 60 Hz. Power consumption shall be < 15 W.The processor shall be constructed of painted steel and weigh 8.6lb (3.9 kg). The processor dimensions shall be 1.8" H x 19.0" W x 8.6" D (45 mm x 483 mm x 218 mm), allowing mounting within a standard equipment rack. The processor shall be a single rack-space unit and have pre-installed 1RU rack ears.The processor shall be the Bose ControlSpace SP-24 sound processor. The control software shall be the ControlSpace SP-24Editor software.Safety and Regulatory Compliance The ControlSpace® SP-24 sound processor complies with CE requirements, and is cUL listed according to UL60065(7th edition) and CAN/CSA C22.2 No. 60065-03, CB approved according to IEC60065 (7th edition) including group and national differences, and is PSE compliant. It also complies with FCC Part 15B Class A (2003), EN55103-1(1997), EN55103-2 (1996), CISPR13 (2003), and Canadian ICES-003 Class A specifications.Product Codes 120V – US 352428-1410240V – AU 352428-2410100V – Japan 352428-3410230V – EU 352428-4410230V – UK 352428-5410。
ALPS电子产品说明书
VF401
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4-Pin SIP (5,13 mm x 3,60 mm x 1,60 mm)
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VM721V1 VM721D1
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8-Pin SOIC (6,0 mm x 4,9 mm x 1,4 mm)
Magnetic Sensor IC Product Line Card
Package Style1, 2
SOT-23 (2,90 mm x 2,80 mm x 1,40 mm)
Flat T0-92-style
-LP
-T2
(4,06 mm x 3,0 mm x 1,57 mm)
Blank -L -S -SP
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APS00B
U-Pack (4,52 mm x 4,52 mm x 1,57 mm)
-T2
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-S Blank
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2SS52M
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1Measurements given do not include lead dimensions. 2Not all lead or packaging combinations are possible. Contact Honeywell Customer Service at 1-800-537-6945 for assistance.
20n60c3场效应管参数
20n60c3场效应管参数
20N60C3 是一种 MosFET(金属氧化物半导体场效应管) 型号，它的基本参数如下:
- 结电压 (Vgs):2.5V 至 3.5V
- 电流承受能力 (Id):100mA 至 2A
- 工作频率 (F):20MHz 至 100MHz
- 表面温度 (Tjs):70°C 至 120°C
- 可靠性系数 (K):3 至 5
与其他 MosFET 型号相比，20N60C3 具有以下特点:
- 放大倍数 (β):较高，可达 100 以上
- 栅极电荷 (Qg):较小，可达 10fg 以下
- 正向电压 (Vf):较低，可达 0.2V 以下
- 反向电压 (Vr):较高，可达 400V 以上
20N60C3 场效应管参数如下:
- 型号:20N60C3
- 结电压 (Vgs):2.5V 至 3.5V
- 电流承受能力 (Id):100mA 至 2A
- 工作频率 (F):20MHz 至 100MHz
- 表面温度 (Tjs):70°C 至 120°C
- 可靠性系数 (K):3 至 5
- 放大倍数 (β):较高，可达 100 以上
- 栅极电荷 (Qg):较小，可达 10fg 以下
- 正向电压 (Vf):较低，可达 0.2V 以下
- 反向电压 (Vr):较高，可达 400V 以上
请注意，这些参数可能因制造商、批次和制造工艺等因素而有所不同。
如果需要更具体的参数信息，请咨询相关的技术专家或参考相关的技术文档。
SPP20N60C3中文资料
VDS = 480 V, ID = 20.7 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4)
S3C2410中文手册第7章 时钟和功率管理
第七章时钟和功率管理概述时钟和功率管理模块由三部分组成：时钟控制，USB控制和功率控制。
S3C2410A的时钟控制逻辑能够产生系统所需要的时钟，包括CPU的FCLK，AHB总线接口的HCLK，和APB总线接口的PCLK。
S3C2410A有两个PLL，一个用于FCLK,HCLK,PCLK，另一个用于USB模块（48MHZ）。
时钟控制逻辑能够由软件控制不将PLL连接到各接口模块以降低处理器时钟频率，从而降低功耗。
S3C2410A有各种针对不同任务提供的最佳功率管理策略，功率管理模块能够使系统工作在如下4种模式：正常模式，低速模式，空闲模式和掉电模式。
正常模式：功率管理模块向CPU和所有外设提供时钟。
这种模式下，当所有外设都开启时，系统功耗将达到最大。
用户可以通过软件控制各种外设的开关。
例如，如果不需要定时器，用户可以将定时器时钟断开以降低功耗。
低速模式：没有PLL的模式。
与正常模式不同，低速模式直接使用外部时钟（XTIpll或者EXTCLK）作为FCLK，这种模式下，功耗仅由外部时钟决定。
空闲模式：功率管理模块仅关掉FCLK，而继续提供时钟给其他外设。
空闲模式可以减少由于CPU核心产生的功耗。
任何中断请求都可以将CPU从中断模式唤醒。
掉电模式：功率管理模块断开内部电源。
因此CPU和除唤醒逻辑单元以外的外设都不会产生功耗。
要执行掉电模式需要有两个独立的电源，其中一个给唤醒逻辑单元供电，另一个给包括CPU在内的其他模块供电。
在掉电模式下，第二个电源将被关掉。
掉电模式可以由外部中断EINT[15:0]或RTC唤醒。
功能描述时钟结构图7-1描述了时钟架构的方块图。
主时钟源由一个外部晶振或者外部时钟产生。
时钟发生器包括连接到一个外部晶振的振荡器和两个PLL（MPLL和UPLL）用于产生系统所需的高频时钟。
时钟源选择表7-1描述了模式控制引脚(OM3和OM2)和选择时钟源之间的对应关系。
OM[3:2]的状态由OM3和OM2引脚的状态在nRESET的上升沿锁存得到。
LCD液晶显示驱动芯片更小体积封装超低功耗低工作电流VKL060SSOP24
LCD液晶显示驱动芯片更小体积封装超低功耗低工作电流VKL060SSOP24产品型号：VKL060产品品牌：永嘉微电/VINKA封装形式：SSOP24产品年份：新年份原厂，工程服务，技术支持！VKL060概述:VKL060是一个点阵式存储映射的LCD驱动器，可支持最大60点（15SEGx4COM）的LCD屏。
单片机可通过I2C接口配置显示参数和读写显示数据，可配置4种功耗模式，也可通过关显示和关振荡器进入省电模式。
其高抗干扰，低功耗的特性适用于水电气表以及工控仪表类产品。
功能特点：·工作电压 2.5-5.5V·内置32 kHz RC振荡器·偏置电压（BIAS）可配置为1/2、1/3· COM周期（DUTY）为1/4·内置显示RAM为15x4位·帧频80Hz·省电模式（通过关显示和关振荡器进入）·可配置4种功耗模式· I2C通信接口·显示模式15x4· 3种显示整体闪烁频率·软件配置LCD显示参数·读写显示数据地址自动加1· VLCD脚提供LCD驱动电压（≤(VDD-VLCD)）·内置上电复位电路(POR)-TEST2接低电平使能·低功耗、高抗干扰·封装：SSOP24L(150mil) (8.65mm x 3.9mm PP=0.635mm)LCD/LED液晶控制器及驱动器系列芯片简介如下：RAM映射LCD控制器和驱动器系列：VK1024B 2.4V～5.2V 6seg*4com 6*3 6*2 偏置电压1/2 1/3 S0P-16VK1056B 2.4V～5.2V 14seg*4com 14*3 14*2 偏置电压1/2 1/3 SOP-24/SSOP-24VK1072B 2.4V～5.2V 18seg*4com 18*3 18*2 偏置电压1/2 1/3 SOP-28VK1072C 2.4V～5.2V 18seg*4com 18*3 18*2 偏置电压1/2 1/3 SOP-28VK1088B 2.4V～5.2V 22seg*4com 22*3 偏置电压1/2 1/3 QFN-32L（4MM*4MM）VK0192 2.4V～5.2V 24seg*8com 偏置电压1/4 LQFP-44VK0256 2.4V～5.2V 32seg*8com 偏置电压1/4 QFP-64VK0256B 2.4V～5.2V 32seg*8com 偏置电压1/4 LQFP-64VK0256C 2.4V～5.2V 32seg*8com 偏置电压1/4 LQFP-52VK1621 2.4V～5.2V 32*4 32*3 32*2 偏置电压1/2 1/3 LQFP44/48/SSOP48/SKY28/DICE裸片VK1622 2.7V～5.5V 32seg*8com 偏置电压1/4 LQFP44/48/52/64/QFP64/DICE裸片VK1623 2.4V～5.2V 48seg*8com 偏置电压1/4 LQFP-100/QFP-100/DICE裸片VK1625 2.4V～5.2V 64seg*8com 偏置电压1/4 LQFP-100/QFP-100/DICEVK1626 2.4V～5.2V 48seg*16com 偏置电压1/5 LQFP-100/QFP-100/DICE高抗干扰LCD液晶控制器及驱动系列:VK2C21A 2.4～5.5V 20seg*4com 16*8 偏置电压1/3 1/4 I2C通讯接口 SOP-28VK2C21B 2.4～5.5V 16seg*4com 12*8 偏置电压1/3 1/4 I2C通讯接口 SOP-24VK2C21C 2.4～5.5V 12seg*4com 8*8 偏置电压1/3 1/4 I2C通讯接口 SOP-20VK2C21D 2.4～5.5V 8seg*4com 4*8 偏置电压1/3 1/4 I2C通讯接口 SOP-16VK2C22A 2.4～5.5V 44seg*4com 偏置电压1/2 1/3 I2C通讯接口 LQFP-52VK2C22B 2.4～5.5V 40seg*4com 偏置电压1/2 1/3 I2C通讯接口 LQFP-48VK2C23A 2.4～5.5V 56seg*4com 52*8 偏置电压1/3 1/4 I2C通讯接口 LQFP-64VK2C23B 2.4～5.5V 36seg*8com 偏置电压1/31/4 I2C通讯接口 LQFP-48VK2C24 2.4～5.5V 72seg*4com 68*8 60*16 偏置电压1/3 1/4 1/5 I2C通讯接口 LQFP-80超低功耗LCD液晶控制器及驱动系列:VKL060 2.5～5.5V 15seg*4com 偏置电压1/2 1/3 I2C 通讯接口 SSOP-24VKL128 2.5～5.5V 32seg*4com 偏置电压1/2 1/3 I2C 通讯接口 LQFP-44VKL144A 2.5～5.5V 36seg*4com 偏置电压1/2 1/3 I2C通讯接口 TSSOP-48VKL144B 2.5～5.5V 36seg*4com 偏置电压1/21/3 I2C通讯接口 QFN48L (6MM*6MM)静态显示LCD液晶控制器及驱动系列：VKS118 2.4～5.2V 118seg*2com 偏置电压 -- 4线通讯接口 LQFP-128VKS232 2.4～5.2V 116seg*2com 偏置电压1/1 1/2 4线通讯接口 LQFP-128———————————————————————内存映射的LED控制器及驱动器VK1628 --- 通讯接口:STb/CLK/DIO 电源电压:5V(4.5～5.5V) 驱动点阵:70/52共阴驱动:10段7位/13段4位共阳驱动:7段10位按键:10x2 封装SOP28VK1629 --- 通讯接口:STb/CLK/DIN/DOUT 电源电压:5V(4.5～5.5V) 驱动点阵:128共阴驱动:16段8位共阳驱动:8段16位按键:8x4 封装QFP44 VK1629A --- 通讯接口:STb/CLK/DIO 电源电压:5V(4.5～5.5V) 驱动点阵:128共阴驱动:16段8位共阳驱动:8段16位按键:--- 封装SOP32 VK1629B --- 通讯接口:STb/CLK/DIO 电源电压:5V(4.5～5.5V) 驱动点阵:112共阴驱动:14段8位共阳驱动:8段14位按键:8x2 封装SOP32 VK1629C --- 通讯接口:STb/CLK/DIO 电源电压:5V(4.5～5.5V) 驱动点阵:120共阴驱动:15段8位共阳驱动:8段15位按键:8x1 封装SOP32 VK1629D --- 通讯接口:STb/CLK/DIO 电源电压:5V(4.5～5.5V) 驱动点阵:96共阴驱动:12段8位共阳驱动:8段12位按键:8x4 封装SOP32 VK1640 --- 通讯接口: CLK/DIN 电源电压:5V(4.5～5.5V) 驱动点阵:128共阴驱动:8段16位共阳驱动:16段8位按键:--- 封装SOP28 VK1640A --- 通讯接口: CLK/DIN 电源电压:5V(4.5～5.5V) 驱动点阵:128共阴驱动:8段16位共阳驱动:16段8位按键:--- 封装SSOP28 VK1640B --- 通讯接口: CLK/DIN 电源电压:5V(4.5～5.5V) 驱动点阵:96共阴驱动:8段12位共阳驱动:12段8位按键:--- 封装SSOP24 VK1650 --- 通讯接口: SCL/SDA 电源电压:5V(3.0～5.5V)共阴驱动:8段4位共阳驱动:4段8位按键:7x4 封装SOP16/DIP16VK1651 --- 通讯接口: SCL/SDA 电源电压:5V(3.0～5.5V)共阴驱动:7段4位共阳驱动:4段7位按键:7x1 封装SOP16/DIP16VK1616 --- 通讯接口: 三线串行电源电压:5V(3.0～5.5V)显示模式：7段4位按键:7x1 封装SOP16/DIP16VK1668 ---通讯接口:STb/CLK/DIO 电源电压:5V(4.5～5.5V) 驱动点阵:70/52共阴驱动:10段7位/13段4位共阳驱动:7段10位按键:10x2 封装SOP24VK6932 --- 通讯接口:STb/CLK/DIN 电源电压:5V(4.5～5.5V) 驱动点阵:128共阴驱动:8段16位17.5/140mA 共阳驱动:16段8位按键:--- 封装SOP32VK16K33 A/B/C--- 通讯接口:SCL/SDA 电源电压:5V(4.5V～5.5V) 驱动点阵:128/96/64共阴驱动:16段8位/12段8位/8段8位共阳驱动:8段16位/8段12位/8段8位按键:13x3 10x3 8x3 封装SOP20/SOP24/SOP28VK1618 ---是带键盘扫描接口的 LED 驱动控制专用电路，内部集成有 MCU 数字接口、数据锁存器、键盘扫描等电路。
电子产品说明书：Eaton PDG24P0150E3XN 电源防御型模具封闭电路保护器
Eaton PDG24P0150E3XNEaton Power Defense molded case circuit breaker, Globally Rated, Frame 2, Four-pole (100% N), 150A, 100kA/480V, PXR20 LSIG w/ CAM Link, ZSI and Relays, No TerminalsGeneral specificationsEaton Power Defense molded case circuit breakerPDG24P0150E3XN 78667932996288.9 mm 152.4 mm 139.5 mm 2.46 kg Eaton Selling Policy 25-000, one (1) year from the date of installation of theProduct or eighteen (18) months from thedate of shipment of the Product,whichever occurs first.RoHS Compliant IEC 60947-2CCC MarkedProduct NameCatalog Number UPCProduct Length/Depth Product Height Product Width Product Weight WarrantyCompliancesCertifications150 AComplete breaker 2Four-pole (100% N)PD2 Global Class APXR 20 LSIG CAM Link600 Vac600 V100% neutral protectionNo Terminals100 kAIC at 480 Vac200 kAIC Icu/ 150 kAIC Ics/ 440 kAIC Icm @240V (IEC) 100 kAIC Icu/ 70 kAIC Ics/ 220 kAIC Icm @380-415V (IEC) 35/25 kAIC @600V (UL/CSA)35/25 kAIC Icu/ 18/13 kAIC Ics @525V South Africa (IEC) 100 kAIC Icu/ 65 kAIC Ics/ 220 kAIC Icm @440V (IEC)200 kAIC @240V (UL)100 kAIC @480V (UL)85 kAIC Icu/ 40 kAIC Ics/ 187 kAIC Icm @480V Brazil (IEC) 22 kAIC Icu @125 Vdc22 kAIC Icu @250 Vdc10 kAIC Icu/ 5 kAIC Ics/ 21 kAIC Icm @690V (IEC)25 kAIC @600V (UL/CSA)Eaton Power Defense MCCB PDG24P0150E3XN 3D drawingPower Xpert Protection Manager x32Power Xpert Protection Manager x64Consulting application guide - molded case circuit breakersPower Defense technical selling bookletPower Defense brochurePower Defense molded case circuit breaker selection poster Power Defense molded case circuit breakers - Frame 2 product aidMolded case circuit breakers catalogAmperage RatingCircuit breaker frame type FrameNumber of poles Circuit breaker type ClassTrip Type CommunicationVoltage ratingVoltage rating - maxProtectionTerminalsInterrupt rating Interrupt rating range 3D CAD drawing package Application notesBrochuresCatalogs150 A Power Xpert Release trip units for Power Defense molded case circuit breakersPDG2 CB reportEU Declaration of Conformity - Power Defense molded case circuit breakersPDG4 CCC certificationPDG4 CB reportPower Defense Frame 1 IEC and Frame 2 Rotary Mechanism with NFPA Handle Attachment Instructions (IL012260EN).pdfPower Defense Frame 2 multi wire connector kit -PDG2X3(2)(4)TA2253W instructions - IL012243EN H01Power Defense Frame 2 tunnel terminal (aluminum), 150A, 4 pole instructions - IL012238EN H04Power Defense Frame 2 box terminal (steel), 100A, 4 pole instructions - IL012234EN H04Power Defense Frame 2 shunt trip UVR instructions - IL012130EN Power Defense Frame 2 tunnel terminal (aluminum), 100A, 4 pole instructions - IL012237EN H04Power Defense Frame 1-2-3-4 IP door barrier assembly instructions -IL012278ENPower Defense Frame 2/3/4/5/6 voltage neutral sensor module wiring instructions – IL012316ENPower Defense Frame 2 tunnel terminal kits - PDG2X1TA225K instructions- IL012239EN H01Power Defense Frame 2 bell alarm switch instructions - IL012154EN Power Defense Frame 2 Bell Alarm Switch Instructions (IL012154EN).pdf Power Defense Frame 2 PDG2 and PDC(E)9 breaker instructions -IL012106ENPower Defense Frame 2 multi wire connector kit -PDG2X3(2)(4)TA2256W instructions - IL012242EN H01Power Defense Frame 2 global terminal shield, 4 pole - IL012330EN Power Defense Frame 2 terminal kit - PDG2X3(2)(4)TA150RF instructions - IL012244EN H01Power Defense Frame 2 box terminal (aluminum), 225A, 4 pole instructions - IL012235EN H04Power Defense Frame 2 clamp terminal (steel), 20A, 4 pole instructions - IL012246EN H04Power Defense Frame 2 screw terminal_end cap kit, 225A, 3 pole instructions - IL012258EN H01Power Defense Frame 2 locking devices and handle block instructions -Trip ratingCertification reportsInstallation instructionsIL012149ENPower Defense Frame 2 terminal kit - PDG2X3(2)(4)TA225RF instructions - IL012245EN H01Power Defense Frame 2 tunnel terminal (aluminum), 50A, 4 pole instructions - IL012236EN H04Installation videosPower Defense Frame 2 TMTU Aux, Alarm, ST and UVR Animated Instructions.rhPower Defense Frame 2 Bell Alarm with PXR Animated Instructions.pdf.rh Power Defense Frame 2 withTMTU, Shunt Trip_UVR Animated Instructions.rhMultimediaPower Defense Frame 3 Variable Depth Rotary Handle Mechanism Installation How-To VideoPower Defense Frame 2 Direct Rotary Handle Mechanism Installation How-To VideoPower Defense Frame 2 Variable Depth Rotary Handle Mechanism Installation How-To VideoPower Defense Frame 2 Aux, Alarm, Shunt Trip, and UVR How-To Video Power Defense molded case circuit breakersPower Defense Frame 5 Trip Unit How-To VideoEaton Power Defense for superior arc flash safetyPower Defense BreakersPower Defense Frame 6 Trip Unit How-To VideoSpecifications and datasheetsEaton Specification Sheet - PDG24P0150E3XNTime/current curvesPower Defense time current curve Frame 2 - PD2White papersMaking a better machineIntelligent power starts with accurate, actionable dataMolded case and low-voltage power circuit breaker healthSingle and double break MCCB performance revisitedIntelligent circuit protection yields space savingsMolded case and low-voltage breaker healthSafer by design: arc energy reduction techniquesEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All Rights Reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmedia。
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Cool MOS™ Power TransistorV DS @ T jmax 650V R DS(on)0.16ΩI D24.3AFeature• New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220• Ultra low gate charge • Periodic avalanche rated • Extreme d v /d t rated• Ultra low effective capacitances • Improved transconductanceTypePackage Ordering Code SPP24N60C3P-TO220-3-1Q67040-S4639Marking 24N60C3Maximum Ratings ParameterSymbol ValueUnitContinuous drain current T C = 25 °C T C = 100 °CI D24.315.4APulsed drain current, t p limited by T jmax I D puls 72.9Avalanche energy, single pulse I D = 10 A, V DD = 50 VE AS780mJAvalanche energy, repetitive t AR limited by T jmax 1)I D = 24.3 A, V DD = 50 VE AR 1Avalanche current, repetitive t AR limited by T jmax I AR 24.3A Gate source voltage static V GS ±20V Gate source voltage AC (f >1Hz)V GS ±30Power dissipation, T C = 25°CP tot 240W Operating and storage temperatureT j , T stg-55... +150°CMaximum RatingsParameter Symbol Value Unit Drain Source voltage slopeV DS = 480 , I D = 24.3 , T j = 125 °Cd v/d t50V/nsThermal CharacteristicsParameter Symbol Values Unitmin.typ.max. Thermal resistance, junction - case R thJC --0.52K/W Thermal resistance, junction - ambient, leaded R thJA--62 Soldering temperature,1.6 mm (0.063 in.) from case for 10sT sold --260°CElectrical Characteristics, at T j=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max.Drain-source breakdown voltage V(BR)DSS V GS=0V, I D=0.25mA600--V Drain-Source avalanchebreakdown voltageV(BR)DS V GS=0V, I D=24.3A-700-Gate threshold voltage V GS(th)I D=1200µΑ, V GS=V DS 2.13 3.9Zero gate voltage drain current I DSS V DS=600V, V GS=0V,T j=25°C, T j=150°C --0.1-1100µAGate-source leakage current I GSS V GS=20, V DS=0V--100nA Drain-source on-state resistance R DS(on)V GS=10V, I D=15.4A,T j=25°C T j=150°C --0.140.340.16-ΩGate input resistance R G f=1MHz, open Drain-0.66-Electrical Characteristics , at T j = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Transconductance g fs V DS≥2*I D*R DS(on)max,I D=15.4A-21.5-SInput capacitance C iss V GS=0V, V DS=25V,f=1MHz -3000-pFOutput capacitance C oss-1000-Reverse transfer capacitance C rss-60-Effective output capacitance,2) energy related C o(er)V GS=0V,V DS=0V to 480V-141-pFEffective output capacitance,3)time relatedC o(tr)-224-Turn-on delay time t d(on)V DD=380V, V GS=0/10V,I D=24.3A, R G=3.3Ω-13-nsRise time t r-21-Turn-off delay time t d(off)-140-Fall time t f-14-Gate Charge CharacteristicsGate to source charge Q gs V DD=480, I D=24.3A-12.7-nC Gate to drain charge Q gd-45.8-Gate charge total Q g V DD=480V, I D=24.3A,V GS=0 to 10V-104.9135Gate plateau voltage V(plateau)V DD=480V, I D=24.3A-5-V1Repetitve avalanche causes additional power losses that can be calculated as PAV=E AR*f.2Co(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS. 3Co(tr)is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.Electrical Characteristics, at T j = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Inverse diode continuousforward currentI S T C=25°C--24.3AInverse diode direct current,pulsedI SM--72.9 Inverse diode forward voltage V SD V GS=0V, I F=I S-1 1.2VReverse recovery time t rr V R=480V, I F=I S ,d i F/d t=100A/µs -600-nsReverse recovery charge Q rr-13-µC Peak reverse recovery current I rrm-70-A Peak rate of fall of reverserecovery currentdi rr/dt-1400-A/µsTypical Transient Thermal CharacteristicsSymbol Value Unit Symbol Value Unittyp.typ.Thermal resistanceR th10.006524K/W R th20.013R th30.025R th40.096R th50.117R th60.053Thermal capacitanceC th10.0004439Ws/K C th20.001662C th30.002268C th40.006183C th50.014C th60.1041 Power dissipation P tot = f (T C)Ptot2 Safe operating areaI D = f ( V DS )parameter :D = 0 , T C=25°C3ID3 Transient thermal impedanceZ thJC = f (t p)parameter: D = t p/T-11010101010K/WZthJC4 Typ. output characteristicI D = f (V DS); T j=25°Cparameter: t p = 10 µs, V GSID5 Typ. output characteristicI D = f (V DS); T j=150°C parameter: t p = 10 µs, V GSID6 Typ. drain-source on resistanceR DS(on)=f(I D)parameter: T j=150°C, V GSRDS(on)7 Drain-source on-state resistanceR DS(on) = f (T j)parameter : I = 15.4 A, V = 10 VRDS(on)8 Typ. transfer characteristicsI D= f (V GS ); V DS≥ 2 x I Dx R DS(on)maxparameter: t p = 10 µsID9 Typ. gate charge V GS= f (Q Gate) parameter: I= 24.3 A pulsedVGS10 Forward characteristics of body diodeI F = f (V SD)parameter: T, t p = 10 µsIF11 Avalanche SOAI AR = f (t AR)par.: T j≤ 150 °C4IAR12 Avalanche energyE AS = f (T j)par.: I D = 10 A, V DD = 50 V13 Drain-source breakdown voltage V(BR)DSS = f (T j)SPP24N60C3V(BR)DSS14 Avalanche power lossesP AR = f (f )parameter: E AR=1mJ6PAR15 Typ. capacitancesC = f (V DS)parameter: V GS=0V, f=1 MHz16 Typ. C oss stored energyEoss=f(V DS)EDefinition of diodes switching characteristicsP-TO-220-3-1All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.32004-03-02Rev. 2.0Page 11Published byInfineon Technologies AG ,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearestInfineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.元器件交易网。