串口电平转换芯片数据手册SP3222_3232E

DESCRIPTION

s Meets true EIA/TIA-232-F Standards from a +3.0V to +5.5V power supply

s 235KBps Transmission Rate Under Load s 1µA Low-Power Shutdown with Receivers Active (SP3222E )

s Interoperable with RS-232 down to +2.7V power source

s Enhanced ESD Specifications: ±15kV Human Body Model

±15kV IEC1000-4-2 Air Discharge ±8kV IEC1000-4-2 Contact Discharge

The SP3222E/3232E series is an RS-232 transceiver solution intended for portable or hand-held applications such as notebook or palmtop computers. The SP3222E/3232E series has a high-efficiency, charge-pump power supply that requires only 0.1µF capacitors in 3.3V operation. This charge pump allows the SP3222E/3232E series to deliver true RS-232performance from a single power supply ranging from +3.3V to +5.0V. The SP3222E/3232E are 2-driver/2-receiver devices. This series is ideal for portable or hand-held applications such as notebook or palmtop computers. The ESD tolerance of the SP3222E/3232E devices are over ±15kV for both Human Body Model and IEC1000-4-2 Air discharge test methods. The SP3222E device has a low-power shutdown mode where the devices' driver outputs and charge pumps are disabled. During shutdown, the supply current falls to less than 1µA.

SELECTION TABLE

L E D O M s e i l p p u S r e w o P 232-S R s r D e v i r 232-S R s

r e v i e c e R l a n r e t x E s

t n e n o p m o C n

w o d t u h S L T T a S -3e t t f o .o N s n i P 2223P S V 5.5+o t V 0.3+224s e Y s e Y 02,812

323P S V

5.5+o t V 0.3+2

2

4

o

N o

N 6

1

R

E T E M A R A P .

N I M .

P Y T .

X A M S

T I N U S

N O I T I D N O C S C I T S I R E T C A R A H C C D t

n e r r u C y l p p u S 3.00.1A m T ,d a o l o n B M A 52+=o V ,C C C V 3.3=t

n e r r u C y l p p u S n w o d t u h S 0

.10

1µA

,D N G =N D H S T B M A 52+=o V ,C C C V

3.3+=S T U P T U O R E V I E C E R D N A S T U P N I C I G O L W O L d l o h s e r h T c i g o L t u p n I 8

.0V 2e t o N ,N D H S ,N E ,N I x T H G I H d l o h s e r h T c i g o L t u p n I 0.24

.2V V C C 2e t o N ,V 3.3=V C C 2

e t o N ,V 0.5=t n e r r u C e g a k a e L t u p n I 10.0±0.1±µA ,N D H S ,N E ,N I x T T B M A 52+=o C t n e r r u C e g a k a e L t u p t u O 5

0.0±01±µA d e l b a s i d s r e v i e c e r W O L e g a t l o V t u p t u O 4.0V I T U O A m 6.1=H G I H e g a t l o V t u p t u O V C C 6

.0-V C C 1

.0-V

I T U O A

m 0.1-=S T U P T U O R E V I R D g

n i w S e g a t l o V t u p t u O 0

.5±4

.5±V

k 3Ω,s t u p t u o r e v i r d l l a t a d n u o r g o t d a o l T B M A 52+=o C

e

c n a t s i s e R t u p t u O 0

03ΩV C C T ,V 0=-V =+V =T U O =+V 2t n e r r u C t i u c r i C -t r o h S t u p t u O 53±0

7±06±001±A m A m V T U O V 0=V T U O =+V

51t

n e r r u C e g a k a e L t u p t u O 5

2±µA

V T U O =+V ,V 21C C d

e l b a s i d s r e v i r d ,V 5.5o t V 0=NOTE 1: V+ and V- can have maximum magnitudes o

f 7V, but their absolute difference cannot exceed 13V.

ABSOLUTE MAXIMUM RATINGS

These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability and cause permanent damage to the device.

V CC ................................................................-0.3V to +6.0V V+ (NOTE 1)................................................-0.3V to +7.0V V- (NOTE 1)................................................+0.3V to -7.0V V+ + |V-| (NOTE 1)....................................................+13V I CC (DC V CC or GND current).................................±100mA

Input Voltages

TxIN, EN .....................................................-0.3V to +6.0V RxIN.............................................................................±25V Output Voltages

TxOUT.....................................................................±13.2V RxOUT..............................................-0.3V to (V CC + 0.3V)Short-Circuit Duration

TxOUT...............................................................Continuous Storage Temperature.................................-65°C to +150°C Power Dissipation Per Package

20-pin SSOP (derate 9.25mW/o C above +70o C).....750mW 18-pin PDIP (derate 15.2mW/o C above +70o C)....1220mW 18-pin SOIC (derate 15.7mW/o C above +70o C)...1260mW 20-pin TSSOP (derate 11.1mW/o C above +70o C)..890mW 16-pin SSOP (derate 9.69mW/o C above +70o C).....775mW 16-pin PDIP (derate 14.3mW/o C above +70o C)....1150mW 16-pin Wide SOIC (derate 11.2mW/o C above +70o C)900mW 16-pin TSSOP (derate 10.5mW/o C above +70o C)..850mW 16-pin nSOIC (derate 13.57mW/°C above +70°C)..1086mW

SPECIFICATIONS

Unless otherwise noted, the following specifications apply for V CC = +3.0V to +5.0V with T AMB = T MIN to T MAX