光耦FAIRCHILD_H_HCPL0600和6N137

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6n137 中文资料 应用电路 pdf 6n137 封装图 6n137 管脚说明

6n137 中文资料 应用电路 pdf 6n137 封装图 6n137 管脚说明

6n137 中文资料 应用电路 pdf 6n137 封装图 6n137 管脚说明6n137中文资料 应用电路 pdf 6n137 封装图 6n137 管脚说明用:6N137/HCPL2601,HCPL2611,HCPL2630,HCPL2631是高速光电耦合器6n137的内部结构原理如下图所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后 导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

当 输入信号电流小于触发阈值或使能端为低时,输出高电平,但这个逻辑高是集电极开路的,可针对接收电路加上拉电阻或电压调整电路。

型号:单通道: 6N137 , HCPL2601 , HCPL2611 双通道: HCPL2630 , HCPL2631 高速10MBit / s 的逻辑门光电引脚图原理如上图所示,若以脚2为输入,脚3接地,则真值表如附表所列,这相当于非门的传输,若希望在传输过程中不改变逻辑状态,则从脚3 输入,脚2接高电平。

真值表 功能(正逻辑) Inp ut 输入 Enabl e 使能Output 输出H H L LHHH L HL L HH NC LL NC H绝对最大额定值(Ta= 25 ℃除非另有说明):Symbol符号Parameter 参数Value 数值Units单位TSTGStorage Temperature 贮藏温度-55 to +125℃TOPROperating Temperature 操作温度-40 to +85℃TSO L Lead Solder Temperature 焊料温度260 for 10sec℃EMITTER 发送端IF DC/Average Forward 直流/平均正向单通道50mA Input Current 输入电流双通道(每通道)30VE Enable Input Voltage Not to Exceed VCC by morethan 500mV单通道 5.5VVR Reverse Input Voltage 反向输入电压每个通道 5.0VPI Power Dissipation 功耗单通道100mW 双通道(每通道)45DETECTOR 接收端VCC(1minutemax)Supply Voltage 电源电压7.0VIO Output Current 输出电流单通道50mA 双通道(每通道)50VO Output Voltage 输出电压每个通道7.0VPO Collector Output 集电极输出单通道85mW Power Dissipation 功耗双通道(每通道)60建议操作条件:Sym bol符号Parameter 参数最小最大Units单位IFL Input Current Low Level 输入电流,低电平025μAIFH Input Current High Level 输入电流,高电平*6.315mAVCC Supply Voltage Output 供电电压,输出 4.55.5VVEL Enable Voltage Low Level 使能电压,低电平00.8VVEH Enable Voltage High Level 使能电压,高电平 2.0VCCVTA工作温度范围-40+85℃N Fan Out (TTL load)扇出期( TTL负载)8电学特性(Ta=0至70 ,除非另有规定)单独的组件特征:Symbol 符号Parameter 参数测试条件最小典型最大单位VF Input Forward Voltage输入正向电压IF = 10mA1.8VTA=25℃1.41.75BVR Input Reverse BreakdownVoltage 输入反向击穿电压IR = 10μA 5.0VCIN Input Capacitance 输入电容VF = 0 f = 1MHz6pFΔV F / ΔT A Input Diode TemperatureCoefficient 输入二极管温度系数IF = 10mA-1.4mV/℃DETECTOR 接收端ICC H High Level Supply Current高电源电流VCC = 5.5V IF= 0mA VE =0.5V单通道710mA双通道1105ICC L Low Level Supply Current低电平电源电流单通道VCC=5.5V IF =10mA913mA双通道VE = 0.5V1421IEL Low Level Enable Current低电平使能电流VCC = 5.5V VE = 0.5V-.8-1.6mAIEH High Level Enable Current高电平使能电流VCC = 5.5V VE = 2.0V-.6-1.6mAVEH High Level Enable Voltage高电平使能电压VCC = 5.5V IF = 10mA 2.0VVEL Low Level Enable Voltage低电平使能电压VCC = 5.5V IF = 10mA(3).8V开关特性 (TA= -40℃ to +85℃ VCC= 5V IF= 7.5mA 除非另有说明):Symbol 符号AC Characteristics交流特性测试条件最小典型最大单位TP HH Propagation DelayTime to Output HIGHLevel传递延迟时间到高电平输出RL=350ΩCL=15pF(4)(Fig.12)TA=25℃204575ns10TP HL Propagation DelayTime to Output LOWLevel传递延迟时间到低电平输出TA = 25℃(5)254575nsRL = 350Ω CL = 15pF (Fig. 12)10|T PHL TP LH |Pulse WidthDistortion 脉宽失真(RL = 350Ω CL = 15pF (Fig. 12)335nstr Output Rise Time(10–90%)输出上升时间( 10-90 % )RL = 350Ω CL = 15pF(6)(Fig. 12)50nstf Output Rise Time(90–10%)输出上升时间( 90-10 % )RL = 350Ω CL = 15pF(7)(Fig. 12)12nstE LH Enable PropagationDelay Time toOutput HIGH Level允许传播延迟时间到高电平输出IF = 7.5mA VEH = 3.5V RL = 350ΩCL =15pF(8)(Fig. 13)20nstE HL Enable PropagationDelay Time toOutput LOW Level 允许传播延迟时间到低电平输出IF = 7.5mA VEH = 3.5V RL = 350ΩCL =15pF(9)(Fig. 13)20ns|C MH |Common ModeTransient Immunity(at Output HIGHLevel) 共模瞬态抑制比(输出高电平)TA=25℃|VCM| =50V(Peak) IF=0mA VOH(Min.)= 2.0V RL =350Ω(10)(Fig.14)6n137HCPL26301000V/μsHCPL2601 HCPL263150001000|VCM| = 400V HCPL261110001500V/μs|C ML |Common ModeTransient Immunity(at Output LOWLevel) 共模瞬态抑制比(输出低电平)RL = 350ΩIF =7.5mA VOL (Max.)=0.8V TA = 25℃(11)(Fig. 14)6n137HCPL26301000HCPL2601 HCPL263150001000|VCM| = 400V HCPL261110001500电气特性(续)转移特性(TA = -40 to +85℃ 除非另有说明)Symbol 符号DC Characteristics 直流特性测试条件最小典型最大Unit单位IO H HIGH Level Output Current高输出电流VCC = 5.5V VO =5.5V IF = 250μAVE = 2.0V(2)100μAVO LOW Level Output Current 低VCC = 5.5V IF = .350.6VL电平输出电流5mA VE = 2.0V ICL= 13mA(2)IF T Input Threshold Current 输入阈值电流VCC = 5.5V VO =0.6V VE = 2.0VIOL = 13mA35mA隔离特性(Ta= -40 ℃至+85 ℃ ,除非另有说明. ):Symbo l 符号Characteristics 特性测试条件最小典型最大Unit单位II -O Input-Output Insulation LeakageCurrent 输入输出绝缘泄漏电流相对湿度 = 45%TA = 25℃ t = 5sVI-O = 3000VDC(12)1.*μAVI S O Withstand Insulation Test Voltage 经受绝缘测试电压)RH < 50% TA =25℃ II-O ≤2μA t = 1min.(12)2500VRMSRI -O Resistance (Input to Output)电阻(输入输出VI-O =500V(12)1012ΩCI -O Capacitance (Input to Output)电容(输入输出)f = 1MHz(12)0.6pF测试电路和波形 tPLH tPHL tr and tf测试电路tEHL和tELH测试电路的共模瞬态抗扰度光藕隔离器6N137典型应用如图1所示,假设输入端属于模块I,输出端属于模块II。

光藕6N137功能及应用

光藕6N137功能及应用

光电隔离器6N137应用一、6N137原理及典型用法6N137的结构原理如图1所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

当输入信号电流小于触发阈值或使能端为低时,输出高电平,但这个逻辑高是集电极开路的,可针对接收电路加上拉电阻或电压调整电路。

简单的原理如图2所示,若以脚2为输入,脚3接地,则真值表如附表所列,这相当于非门的传输,若希望在传输过程中不改变逻辑状态,则从脚3输入,脚2接高电平。

隔离器使用方法如图2所示,假设输入端属于模块I,输出端属于模块II。

输入端有A、B两种接法,分别得到反相或同相逻辑传输,其中RF为限流电阻。

发光二极管正向电流0-250uA,光敏管不导通;发光二极管正向压降1.2-1.7V,正向电流6.5-15mA,光敏管导通。

若以B方法连接,TTL电平输入,Vcc为5V时,RF可选500Ω左右。

如果不加限流电阻或阻值很小,6N137仍能工作,但发光二极管导通电流很大对Vcc1有较大冲击,尤其是数字波形较陡时,上升、下降沿的频谱很宽,会造成相当大的尖峰脉冲噪声,而通常印刷电路板的分布电感会使地线吸收不了这种噪声,其峰-峰值可达100mV以上,足以使模拟电路产生自激,A/D不能正常工作。

所以在可能的情况下,RF应尽量取大。

输出端由模块II供电,Vcc2=4.5-5.5V。

在Vcc2(脚8)和地(脚5)之间必须接一个0.1uF高频特性良好的电容,如瓷介质或钽电容,而且应尽量放在脚5和脚8附近。

这个电容可以吸收电源线上的纹波,又可以减小光电隔离器接受端开关工作时对电源的冲击。

脚7是使能端,当它在0-0.8V时强制输出为高(开路);当它在2.0V-Vcc2时允许接收端工作,见附表。

脚6是集电极开路输出端,通常加上拉电阻RL。

6N137中文详解详解

6N137中文详解详解

6N137光耦合器是一款用于单通道的高速光耦合器,其内部有一个850 nm波长AlGaAs LED和一个集成检测器组成,其检测器由一个光敏二极管、高增益线性运放及一个肖特基钳位的集电极开路的三极管组成。

具有温度、电流和电压补偿功能,高的输入输出隔离,LSTTL/TTL兼容,高速(典型为10MBd),5mA的极小输入电流。

特性:①转换速率高达10MBit/s;②摆率高达10kV/us;③扇出系数为8;④逻辑电平输出;⑤集电极开路输出;工作参数:最大输入电流,低电平:250uA 最大输入电流,高电平:15mA 最大允许低电平电压(输出高):0.8v 最大允许高电平电压:Vcc 最大电源电压、输出:5.5V 扇出(TTL负载):8个(最多) 工作温度范围:-40°C to +85°C典型应用:高速数字开关,马达控制系统和A/D转换等6N137光耦合器的内部结构、管脚如图1所示。

6N137光耦合器的真值如表1所示:6N137光耦合器的真值表输入使能输出H H LL H HH L HL L HH NC LHNC L需要注意的是,在6N137光耦合器的电源管脚旁应有—个0.1uF的去耦电容。

在选择电容类型时,应尽量选择高频特性好的电容器,如陶瓷电容或钽电容,并且尽量靠近6N137光耦合器的电源管脚;另外,输入使能管脚在芯片内部已有上拉电阻,无需再外接上拉电阻。

6N137光耦合器的使用需要注意两点:第一是6N137光耦合器的第6脚Vo输出电路属于集电极开路电路,必须上拉一个电阻;第二是6N137光耦合器的第2脚和第3脚之间是一个LED,必须串接一个限流电阻。

6n137的内部结构原理如下图所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

6N137资料及应用实例

6N137资料及应用实例

6N137资料及应用实例6N137是由一个850 nm波长AlGaAs LED和一个集成检测器组成,并用于单通道的一款高速光耦合器,其集成检测器由一个光敏二极管、高增益线性运放及一个肖特基钳位的集电极开路的三极管组成。

具有温度、电流和电压补偿功能,高的输入输出隔离,LSTTL/TTL兼容,高速(典型为10MBd),5mA的极小输入电流。

6N137特性:①转换速率高达10MBit/s; ②摆率高达10kV/us; ③扇出系数为8; ④逻辑电平输出; ⑤集电极开路输出;6N137工作参数:最大输入电流,低电平:250uA 最大输入电流,高电平:15mA 最大允许低电平电压(输出高):0.8v 最大允许高电平电压:Vcc 最大电源电压、输出:5.5V 扇出(TTL负载):8个(最多) 工作温度范围:-40°C to +85°C 典型应用:高速数字开关,马达控制系统和A/D转换等6N137光耦合器的内部结构、管脚如图1所示,真值如表1所示:二6N137应用实例信号采集系统通常是包含有模拟电路和数字电路,并且其中模数变换是不可缺少的。

从信号通路来说,AD变换之前是模拟电路,变换之后是数字电路。

模拟电路和AD变换电路决定了系统的信噪比,而这是评价采集系统优劣的关键参数。

为了提高信噪比通常要想办法抑制系统中噪声对模拟和AD电路的干扰。

在各种噪声当中由数字电路产生并串入模拟及AD电路的噪声普遍存在且较难克服。

数字电平上下跳变时集成电路耗电发生突变引起电源产生毛刺通常对开关电源影响比线性电源大因为开关电源在开关周期内不能响应电流突变而仅由电容提供电流的变化部分。

一般数字电路越复杂数据速率越高累积的电流跳变越强烈高频分量越丰富。

而普通印刷电路的分布电感较大使地线不能完全吸收逻辑电平跳变产生的电流高频分量产生电压的毛刺而这种毛刺进入地线后就不能靠旁路电容吸收了而且会通过共同的地线或穿过变压器干扰模拟电路和AD转换器其幅度可高达几百毫伏足以使AD工作不正常。

6n137 中文资料 应用电路 pdf 6n137 封装图 6n137 管脚说明

6n137 中文资料 应用电路 pdf 6n137 封装图 6n137 管脚说明

找电源工作上-----------------电源英才网6n137 中文资料应用电路 pdf 6n137 封装图 6n137 管脚说明 6n137中文资料应用电路 pdf 6n137 封装图 6n137 管脚说明用:6N137/HCPL2601,HCPL2611,HCPL2630,HCPL2631是高速光电耦合器6n137的内部结构原理如下图所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

当输入信号电流小于触发阈值或使能端为低时,输出高电平,但这个逻辑高是集电极开路的,可针对接收电路加上拉电阻或电压调整电路。

型号:单通道: 6N137 , HCPL2601 , HCPL2611双通道: HCPL2630 , HCPL2631高速10MBit / s的逻辑门光电引脚图原理如上图所示,若以脚2为输入,脚3接地,则真值表如附表所列,这相当于非门的传输,若希望在传输过程中不改变逻辑状态,则从脚3 输入,脚2接高电平。

真值表功能(正逻辑)Inp ut 输入Enable 使能Output输出H H LL H HH L HL L HH NC LL NC H绝对最大额定值(Ta= 25 ℃除非另有说明):Symbol符号Parameter 参数Value 数值Units单位TSTGStorage Temperature 贮藏温度-55 to +125℃TOPROperating Temperature 操作温度-40 to +85℃TSO L Lead Solder Temperature 焊料温度260 for 10sec℃EMITTER 发送端IF DC/Average Forward 直流/平均正向单通道50mA Input Current 输入电流双通道(每通道)30VE Enable Input Voltage Not to Exceed VCC by morethan 500mV单通道 5.5VVR Reverse Input Voltage 反向输入电压每个通道 5.0VPI Power Dissipation 功耗单通道100mW 双通道(每通道)45DETECTOR 接收端VCC(1minutemax)Supply Voltage 电源电压7.0VIO Output Current 输出电流单通道50mA 双通道(每通道)50VO Output Voltage 输出电压每个通道7.0VPO Collector Output 集电极输出单通道85mW Power Dissipation 功耗双通道(每通道)60建议操作条件:Symbol符号Parameter 参数最小最大Units单位IFL Input Current Low Level 输入电流,低电平025μAIFH Input Current High Level 输入电流,高电平*6.315mAVCC Supply Voltage Output 供电电压,输出 4.55.5VVEL Enable Voltage Low Level 使能电压,低电平00.8VVEH Enable Voltage High Level 使能电压,高电平 2.0VCCVTA工作温度范围-40+85℃N Fan Out (TTL load)扇出期( TTL负载)8电学特性(Ta=0至70 ,除非另有规定)单独的组件特征:Symbol 符号Parameter 参数测试条件最小典型最大单位VF Input Forward Voltage输入正向电压IF = 10mA1.8VTA=25℃1.41.75BVR Input Reverse BreakdownVoltage 输入反向击穿电压IR = 10μA 5.0VCIN Input Capacitance 输入电容VF = 0 f = 1MHz6pFΔV F / Input Diode TemperatureCoefficient 输入二极管温IF = 10mA-1mV/ΔT A 度系数.4℃DETECTOR 接收端ICC H High Level Supply Current高电源电流VCC = 5.5V IF= 0mA VE =0.5V单通道71mA双通道115ICC L Low Level Supply Current低电平电源电流单通道VCC=5.5V IF =10mA913mA双通道VE = 0.5V1421IEL Low Level Enable Current低电平使能电流VCC = 5.5V VE = 0.5V-.8-1.6mAIEH High Level Enable Current高电平使能电流VCC = 5.5V VE = 2.0V-.6-1.6mAVEH High Level Enable Voltage高电平使能电压VCC = 5.5V IF = 10mA 2.0VVEL Low Level Enable Voltage低电平使能电压VCC = 5.5V IF = 10mA(3).8V开关特性 (TA= -40℃ to +85℃ VCC= 5V IF= 7.5mA 除非另有说明):Symbol 符号AC Characteristics交流特性测试条件最小典型最大单位TP HH Propagation DelayTime to Output HIGHLevel传递延迟时间到高电平输出RL=350ΩCL=15pF(4)(Fig.12)TA=25℃204575ns10TP HL Propagation DelayTime to Output LOWLevel传递延迟时间到低电平输出TA = 25℃(5)254575nsRL = 350Ω CL = 15pF (Fig. 12)10|T PH Pulse WidthDistortion 脉宽失(RL = 350Ω CL = 15pF (Fig. 12)335nsLTPLH|真tr Output Rise Time(10–90%)输出上升时间( 10-90 % )RL = 350Ω CL = 15pF(6)(Fig. 12)50nstf Output Rise Time(90–10%)输出上升时间( 90-10 % )RL = 350Ω CL = 15pF(7)(Fig. 12)12nstE LH Enable PropagationDelay Time toOutput HIGH Level允许传播延迟时间到高电平输出IF = 7.5mA VEH = 3.5V RL = 350Ω CL =15pF(8)(Fig. 13)20nstE HL Enable PropagationDelay Time toOutput LOW Level 允许传播延迟时间到低电平输出IF = 7.5mA VEH = 3.5V RL = 350Ω CL =15pF(9)(Fig. 13)20ns|C MH |Common ModeTransient Immunity(at Output HIGHLevel) 共模瞬态抑制比(输出高电平)TA=25℃|VCM| =50V(Peak) IF=0mA VOH(Min.)= 2.0V RL =350Ω(10)(Fig.14)6n137HCPL26301000V/μsHCPL2601 HCPL263150001000|VCM| = 400V HCPL261110001500V/μs|C ML |Common ModeTransient Immunity(at Output LOWLevel) 共模瞬态抑制比(输出低电平)RL = 350Ω IF =7.5mA VOL (Max.)=0.8V TA = 25℃(11)(Fig. 14)6n137HCPL26301000HCPL2601 HCPL263150001000|VCM| = 400V HCPL261110001500电气特性(续)转移特性(TA = -40 to +85℃ 除非另有说明)Sy DC Characteristics 直流特测试条件最小典型最大Umb ol 符号性nit单位IO H HIGH Level Output Current高输出电流VCC = 5.5V VO =5.5V IF = 250μAVE = 2.0V(2)100μAVO L LOW Level Output Current 低电平输出电流VCC = 5.5V IF =5mA VE = 2.0V ICL= 13mA(2).350.6VIF T Input Threshold Current 输入阈值电流VCC = 5.5V VO =0.6V VE = 2.0VIOL = 13mA35mA隔离特性(Ta= -40 ℃至+85 ℃ ,除非另有说明. ):Symbo l 符号Characteristics 特性测试条件最小典型最大Unit单位II -O Input-Output Insulation LeakageCurrent 输入输出绝缘泄漏电流相对湿度 = 45%TA = 25℃ t = 5sVI-O = 3000VDC(12)1.*μAVI S O Withstand Insulation Test Voltage 经受绝缘测试电压)RH < 50% TA =25℃ II-O ≤2μA t = 1min.(12)2500VRMSRI -O Resistance (Input to Output)电阻(输入输出VI-O =500V(12)1012ΩCI -O Capacitance (Input to Output)电容(输入输出)f = 1MHz(12)0.6pF找电源工作上-----------------电源英才网测试电路和波形 tPLH tPHL tr and tf测试电路tEHL和tELH找电源工作上-----------------电源英才网测试电路的共模瞬态抗扰度光藕隔离器6N137典型应用如图1所示,假设输入端属于模块I,输出端属于模块II。

6N137中文

6N137中文

6N137光耦合器是一款用于单通道的高速光耦合器,其内部有一个850 nm波长AlGaAs LED和一个集成检测器组成,其检测器由一个光敏二极管、高增益线性运放及一个肖特基钳位的集电极开路的三极管组成。

具有温度、电流和电压补偿功能,高的输入输出隔离,LSTTL/TTL兼容,高速(典型为10MBd),5mA的极小输入电流。

特性:①转换速率高达10MBit/s;②摆率高达10kV/us;③扇出系数为8;④逻辑电平输出;⑤集电极开路输出;工作参数:最大输入电流,低电平:250uA 最大输入电流,高电平:15mA 最大允许低电平电压(输出高):0.8v 最大允许高电平电压:Vcc 最大电源电压、输出:5.5V 扇出(TTL负载):8个(最多) 工作温度范围:-40°C to +85°C 典型应用:高速数字开关,马达控制系统和A/D转换等6N137光耦合器的内部结构、管脚如图1所示。

6N137光耦合器的真值如表1所示:6N137光耦合器的真值表输入使能输出H H LL H HH L HL L HH NC LL NC H需要注意的是,在6N137光耦合器的电源管脚旁应有—个0.1uF的去耦电容。

在选择电容类型时,应尽量选择高频特性好的电容器,如陶瓷电容或钽电容,并且尽量靠近6N137光耦合器的电源管脚;另外,输入使能管脚在芯片内部已有上拉电阻,无需再外接上拉电阻。

6N137光耦合器的使用需要注意两点:第一是6N137光耦合器的第6脚Vo输出电路属于集电极开路电路,必须上拉一个电阻;第二是6N137光耦合器的第2脚和第3脚之间是一个LED,必须串接一个限流电阻6N137的内部结构原理如下图所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

6N137

6N137

高速光耦6N137应用电电路相关6N137的资料请参考:6N137光电耦合器中文资料一、6N137原理及典型用法6N137的结构原理如图1所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

当输入信号电流小于触发阈值或使能端为低时,输出高电平,但这个逻辑高是集电极开路的,可针对接收电路加上拉电阻或电压调整电路。

简单的原理如图2所示,若以脚2为输入,脚3接地,则真值表如附表所列,这相当于非门的传输,若希望在传输过程中不改变逻辑状态,则从脚3输入,脚2接高电平。

6N137真值表输入使能输出H H LL H HH L HL L H隔离器使用方法如图2所示,假设输入端属于模块I,输出端属于模块II。

输入端有A、B两种接法,分别得到反相或同相逻辑传输,其中RF为限流电阻。

发光二极管正向电流0-250uA,光敏管不导通;发光二极管正向压降1.2-1.7V,正向电流6.5-15mA,光敏管导通。

若以B方法连接,TTL电平输入,Vcc为5V时,RF可选500Ω左右。

如果不加限流电阻或阻值很小,6N137仍能工作,但发光二极管导通电流很大对Vcc1有较大冲击,尤其是数字波形较陡时,上升、下降沿的频谱很宽,会造成相当大的尖峰脉冲噪声,而通常印刷电路板的分布电感会使地线吸收不了这种噪声,其峰-峰值可达100mV以上,足以使模拟电路产生自激,A/D不能正常工作。

所以在可能的情况下,RF应尽量取大。

输出端由模块II供电,Vcc2=4.5-5.5V。

在Vcc2(脚8)和地(脚5)之间必须接一个0.1uF高频特性良好的电容,如瓷介质或钽电容,而且应尽量放在脚5和脚8附近。

这个电容可以吸收电源线上的纹波,又可以减小光电隔离器接受端开关工作时对电源的冲击。

6n137中文资料应用电路pdf6n137封装图6n137管脚说明

6n137中文资料应用电路pdf6n137封装图6n137管脚说明

6n137 中文资料应用电路 pdf 6n137 封装图6n137 管脚说明<P6n137中文资料应用电路 pdf 6n137 封装图 6n137 管脚说明用:6N137/HCPL2601,HCPL2611,HCPL2630,HCPL2631是高速光电耦合器6n137的内部结构原理如下图所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

当输入信号电流小于触发阈值或使能端为低时,输出高电平,但这个逻辑高是集电极开路的,可针对接收电路加上拉电阻或电压调整电路。

型号:单通道: 6N137 , HCPL2601 , HCPL2611双通道: HCPL2630 , HCPL2631高速10MBit / s的逻辑门光电引脚图原理如上图所示,若以脚2为输入,脚3接地,则真值表如附表所列,这相当于非门的传输,若希望在传输过程中不改变逻辑状态,则从脚3 输入,脚2接高电平。

真值表功能(正逻辑)Input 输入Enable使能Output输出H H LL H HH L HL L HH NC LL NC H绝对最大额定值(Ta= 25 ℃除非另有说明):Symbol符号Parameter 参数Value 数值Units单位TSTG Storage Temperature 贮藏温度-55 to +125 ℃TOPR Operating Temperature 操作温度-40 to +85 ℃TSOL Lead Solder Temperature 焊料温度260 for 10 sec ℃EMITTER 发送端IF DC/Average Forward 直流/平均正向单通道50mA Input Current 输入电流双通道(每通道)30VE Enable Input Voltage Not to Exceed VCC by more than500mV单通道 5.5 VVR Reverse Input Voltage 反向输入电压每个通道 5.0 VPI Power Dissipation 功耗单通道100mW 双通道(每通道)45DETECTOR 接收端VCC (1minutemax)Supply Voltage 电源电压7.0 VIO Output Current 输出电流单通道50mA 双通道(每通道)50VO Output Voltage 输出电压每个通道7.0 VPO Collector Output 集电极输出单通道85mW Power Dissipation 功耗双通道(每通道) 60建议操作条件:Symbol符号 Parameter 参数最 小最大 Units 单位IFL Input Current Low Level 输入电流,低电平 0 250 μA IFH Input Current High Level 输入电流,高电平 *6.3 15 mA VCC Supply Voltage Output 供电电压,输出 4.5 5.5 V VEL Enable Voltage Low Level 使能电压,低电平 0 0.8 V VEH Enable Voltage High Level 使能电压,高电平 2.0 VCC V TA 工作温度范围-40 +85 ℃ NFan Out (TTL load)扇出期( TTL 负载)8电学特性(Ta=0至70 ,除非另有规定) 单独的组件特征:Symbol 符号 Parameter 参数 测试条件最小 典型 最大 单位 VFInput Forward Voltage 输入正向电压 IF = 10mA 1.8VTA=25℃1.4 1.75BVR Input Reverse Breakdown Voltage 输入反向击穿电压IR = 10μA 5.0 V CIN Input Capacitance 输入电容 VF = 0 f = 1MHz 60 pF ΔVF / ΔTA Input Diode Temperature Coefficient 输入二极管温度系数 IF = 10mA-1.4 mV/℃DETECTOR 接收端 ICCHHigh Level Supply Current 高电源电流VCC = 5.5V IF = 0mA VE = 0.5V单通道 7 10 mA双通道 10 15 ICCLLow Level Supply Current 低电平电源电流单通道 VCC=5.5V IF = 10mA 9 13 mA双通道VE = 0.5V14 21IEL Low Level Enable Current 低电平使能电流VCC = 5.5V VE = 0.5V -0.8 -1.6 m AIEH High Level Enable Current 高电平使能电流VCC = 5.5V VE = 2.0V -0.6 -1.6 m AVEH High Level Enable Voltage 高电平使能电压VCC = 5.5V IF = 10mA 2.0 VVEL Low Level Enable Voltage 低电平使能电压VCC = 5.5V IF = 10mA(3) 0.8 V开关特性 (TA= -40℃ to +85℃ VCC= 5V IF= 7.5mA 除非另有说明):Symbol符号AC Characteristics 交流特性测试条件 最小 典型最大 单位 TPHHPropagation Delay Timeto Output HIGH Level 传递延迟时间到高电平输出RL=350ΩCL=15pF(4)(Fig.12)TA=25℃ 20 45 75 ns100TPHLPropagation Delay Time to Output LOW Level 传递延迟时间到低电平输出TA = 25℃(5) 25 45 75 ns RL = 350Ω CL = 15pF (Fig. 12)100|TPHLTPLH| Pulse Width Distortion脉宽失真(RL = 350Ω CL = 15pF (Fig. 12)3 35 nstrOutput Rise Time (10–90%)输出上升时间( 10-90 % ) RL = 350Ω CL = 15pF(6)(Fig. 12) 50 nstfOutput Rise Time (90–10%)输出上升时间( 90-10 % ) RL = 350Ω CL = 15pF(7)(Fig. 12) 12 nstELHEnable PropagationDelay Time to Output HIGH Level 允许传播延迟时间到高电平输出 IF = 7.5mA VEH = 3.5V RL = 350Ω CL = 15pF(8)(Fig.13)20 nstEHLEnable PropagationDelay Time to Output LOW Level 允许传播延迟时间到低电平输出IF = 7.5mA VEH = 3.5V RL = 350Ω CL = 15pF(9)(Fig.13)20 ns|CMH|Common Mode Transient Immunity (at OutputHIGH Level) 共模瞬态抑制比(输出高电平)TA=25℃|VCM| =50V (Peak)IF=0mA VOH (Min.)= 2.0V RL = 350Ω(10)(Fig. 14)6n137HCPL263010000V/μs HCPL2601HCPL2631 5000 10000 |VCM| = 400VHCPL261110000 15000V/μs |CML|Common Mode Transient Immunity (at Output LOW Level) 共模瞬态抑制比(输出低电平)RL = 350Ω IF = 7.5mA VOL(Max.)= 0.8V TA = 25℃(11) (Fig. 14) 6n137HCPL263010000HCPL2601HCPL26315000 10000 |VCM| = 400VHCPL261110000 15000电气特性(续)转移特性(TA = -40 to +85℃除非另有说明)Symbol符号DC Characteristics 直流特性测试条件最小典型最大Unit 单位IOH HIGH Level Output Current 高输出电流VCC = 5.5V VO = 5.5V IF =250μA VE = 2.0V(2)100 μAVOL LOW Level Output Current 低电平输出电流VCC = 5.5V IF = 5mA VE =2.0V ICL = 13mA(2).35 0.6 VIFT Input Threshold Current 输入阈值电流VCC = 5.5V VO = 0.6V VE =2.0V IOL = 13mA3 5 mA隔离特性(Ta= -40 ℃至+85 ℃,除非另有说明. ):Symbol符号Characteristics 特性测试条件最小典型最大Unit单位II-O Input-Output Insulation Leakage Current 输入输出绝缘泄漏电流相对湿度 = 45% TA = 25℃ t= 5s VI-O = 3000 VDC(12)1.0* μAVISO Withstand Insulation Test Voltage 经受绝缘测试电压)RH < 50% TA = 25℃ II-O ≤2μA t = 1 min.(12)2500 VRMSRI-O Resistance (Input to Output)电阻(输入输出VI-O = 500V(12) 1012ΩCI-O Capacitance (Input to Output)电容(输入输出)f = 1MHz(12) 0.6 pF测试电路和波形 tPLH tPHL tr and tf测试电路tEHL和tELH测试电路的共模瞬态抗扰度光藕隔离器6N137典型应用如图1所示,假设输入端属于模块I,输出端属于模块II。

6n137中文资料

6n137中文资料

6N137中文资料特性:①转换速率高达10MBit/s;②摆率高达10kV/us;③扇出系数为8;④逻辑电平输出;⑤集电极开路输出;工作参数:最大输入电流,低电平:250uA 最大输入电流,高电平:15mA 最大允许低电平电压(输出高):0.8v 最大允许高电平电压:Vcc 最大电源电压、输出:5.5V 扇出(TTL负载):8个(最多) 工作温度范围:-40°C to +85°C 典型应用:高速数字开关,马达控制系统和A/D转换等6N137光耦合器的内部结构、管脚如图1所示。

6N137光耦合器的真值如表1所示:需要注意的是,在6N137光耦合器的电源管脚旁应有—个0.1uF的去耦电容。

在选择电容类型时,应尽量选择高频特性好的电容器,如陶瓷电容或钽电容,并且尽量靠近6N137光耦合器的电源管脚;另外,输入使能管脚在芯片内部已有上拉电阻,无需再外接上拉电阻。

6N137光耦合器的使用需要注意两点:第一是6N137光耦合器的第6脚Vo输出电路属于集电极开路电路,必须上拉一个电阻;第二是6N137光耦合器的第2脚和第3脚之间是一个LED,必须串接一个限流电阻。

6N137光耦合器是一款用于单通道的高速光耦合器,其内部有一个850 nm波长AlGaAs LED和一个集成检测器组成,其检测器由一个光敏二极管、高增益线性运放及一个肖特基钳位的集电极开路的三极管组成。

具有温度、电流和电压补偿功能,高的输入输出隔离,LSTTL/TTL兼容,高速(典型为10MBd),5mA的极小输入电流。

特性:①转换速率高达10MBit/s;②摆率高达10kV/us;③扇出系数为8;④逻辑电平输出;⑤集电极开路输出;工作参数:最大输入电流,低电平:250uA 最大输入电流,高电平:15mA 最大允许低电平电压(输出高):0.8v 最大允许高电平电压:Vcc 最大电源电压、输出:5.5V 扇出(TTL负载):8个(最多) 工作温度范围:-40°C to +85°C 典型应用:高速数字开关,马达控制系统和A/D转换等6N137光耦合器的内部结构、管脚如图1所示。

6N137中文资料

6N137中文资料

6n137 中文资料应用电路pdf 6n137 封装图6n137 管脚说明<P6n137中文资料应用电路pdf 6n137 封装图6n137 管脚说明用:6N137/HCPL2601,HCPL2611,HCPL2630,HCPL2631是高速光电耦合器6n137的内部结构原理如下图所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

当输入信号电流小于触发阈值或使能端为低时,输出高电平,但这个逻辑高是集电极开路的,可针对接收电路加上拉电阻或电压调整电路。

型号:单通道:6N137 ,HCPL2601 ,HCPL2611双通道:HCPL2630 ,HCPL2631高速10MBit / s的逻辑门光电引脚图原理如上图所示,若以脚2为输入,脚3接地,则真值表如附表所列,这相当于非门的传输,若希望在传输过程中不改变逻辑状态,则从脚3 输入,脚2接高电平。

真值表功能(正逻辑)绝对最大额定值(Ta= 25 ℃除非另有说明):建议操作条件:电学特性(Ta=0至70 ,除非另有规定)单独的组件特征:开关特性(TA= -40℃to +85℃VCC= 5V IF= 7.5mA 除非另有说明):电气特性(续)转移特性(TA = -40 to +85℃除非另有说明)隔离特性(Ta= -40 ℃至+85 ℃,除非另有说明. ):测试电路和波形tPLH tPHL tr and tf测试电路tEHL和tELH测试电路的共模瞬态抗扰度光藕隔离器6N137典型应用如图1所示,假设输入端属于模块I,输出端属于模块II。

输入端有A、B两种接法,分别得到反相或同相逻辑传输,其中RF为限流电阻。

发光二极管正向电流0-250μA,光敏管不导通;发光二极管正向压降1.2-1.7V(典型1.4V),正向电流6.3-15mA,光敏管导通。

6n137_中文资料

6n137_中文资料

6n137 中文资料 应用电路 pdf 6n137 封装图6n137 管脚说明<P6n137中文资料 应用电路 pdf 6n137 封装图 6n137 管脚说明用:6N137/HCPL2601,HCPL2611,HCPL2630,HCPL2631是高速光电耦合器6n137的内部结构原理如下图所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后 导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

当 输入信号电流小于触发阈值或使能端为低时,输出高电平,但这个逻辑高是集电极开路的,可针对接收电路加上拉电阻或电压调整电路。

型号:单通道: 6N137 , HCPL2601 , HCPL2611双通道: HCPL2630 , HCPL2631高速10MBit / s的逻辑门光电引脚图原理如上图所示,若以脚2为输入,脚3接地,则真值表如附表所列,这相当于非门的传输,若希望在传输过程中不改变逻辑状态,则从脚3 输入,脚2接高电平。

真值表 功能(正逻辑)Input 输入Enable使能Output输出H H LL H HH L HL L HH NC LL NC H绝对最大额定值(Ta= 25 ℃除非另有说明):Symbol符号 Parameter 参数 Value 数值Units单位TSTG Storage Temperature 贮藏温度-55 to +125 ℃ TOPR Operating Temperature 操作温度-40 to +85 ℃ TSOL Lead Solder Temperature 焊料温度260 for 10 sec ℃ EMITTER 发送端DC/Average Forward 直流/平均正向单通道50IFInput Current 输入电流双通道(每通道)30mAVE Enable Input Voltage Not to Exceed VCC by more than500mV单通道 5.5 VVR Reverse Input Voltage 反向输入电压每个通道 5.0 V单通道100PI Power Dissipation 功耗双通道(每通道)45mW DETECTOR 接收端VCC (1minutemax)Supply Voltage 电源电压7.0 V单通道50IO Output Current 输出电流双通道(每通道)50mA VO Output Voltage 输出电压每个通道7.0 VCollector Output 集电极输出单通道85POPower Dissipation 功耗双通道(每通道) 60mW 建议操作条件:Symbol符号 Parameter 参数最 小最大 Units 单位IFL Input Current Low Level 输入电流,低电平 0 250 μA IFH Input Current High Level 输入电流,高电平 *6.3 15 mA VCC Supply Voltage Output 供电电压,输出 4.5 5.5 V VEL Enable Voltage Low Level 使能电压,低电平 0 0.8 V VEH Enable Voltage High Level 使能电压,高电平 2.0 VCC V TA 工作温度范围-40 +85 ℃ NFan Out (TTL load)扇出期( TTL 负载)8电学特性(Ta=0至70 ,除非另有规定) 单独的组件特征:Symbol 符号 Parameter 参数 测试条件最小 典型 最大 单位1.8VFInput Forward Voltage 输入正向电压 IF = 10mA TA=25℃1.4 1.75 VBVR Input Reverse Breakdown Voltage 输入反向击穿电压IR = 10μA 5.0VCIN Input Capacitance 输入电容 VF = 0 f = 1MHz60 pF ΔVF / ΔTA Input Diode Temperature Coefficient输入二极管温度系数 IF = 10mA-1.4mV/℃DETECTOR 接收端 单通道 7 10 ICCHHigh Level Supply Current 高电源电流VCC = 5.5V IF = 0mA VE = 0.5V双通道 10 15 mA单通道 VCC=5.5V IF = 10mA 9 13 ICCLLow Level Supply Current 低电平电源电流双通道VE = 0.5V14 21mAIEL Low Level Enable Current 低电平使能电流VCC = 5.5V VE = 0.5V -0.8 -1.6 mAIEH High Level Enable Current 高电平使能电流VCC = 5.5V VE = 2.0V -0.6 -1.6 mAVEH High Level Enable Voltage 高电平使能电压VCC = 5.5V IF = 10mA 2.0 VVEL Low Level Enable Voltage 低电平使能电压VCC = 5.5V IF = 10mA(3) 0.8 V开关特性 (TA= -40℃ to +85℃ VCC= 5V IF= 7.5mA 除非另有说明):Symbol符号AC Characteristics 交流特性测试条件 最小 典型最大 单位 TA=25℃ 20 45 75 TPHHPropagation Delay Timeto Output HIGH Level 传递延迟时间到高电平输出RL=350ΩCL=15pF(4)(Fig.12)100nsTA = 25℃(5) 25 45 75 TPHLPropagation Delay Time to Output LOW Level 传递延迟时间到低电平输出RL = 350Ω CL = 15pF (Fig. 12)100ns |TPHLTPLH| Pulse Width Distortion脉宽失真(RL = 350Ω CL = 15pF (Fig. 12)3 35 nstrOutput Rise Time (10–90%)输出上升时间( 10-90 % ) RL = 350Ω CL = 15pF(6)(Fig. 12) 50 nstfOutput Rise Time (90–10%)输出上升时间( 90-10 % ) RL = 350Ω CL = 15pF(7)(Fig. 12) 12 nstELHEnable PropagationDelay Time to Output HIGH Level 允许传播延迟时间到高电平输出 IF= 7.5mA VEH = 3.5V RL = 350Ω CL = 15pF(8)(Fig. 13)20 nstEHLEnable PropagationDelay Time to Output LOW Level 允许传播延迟时间到低电平输出IF = 7.5mA VEH = 3.5V RL = 350Ω CL = 15pF(9)(Fig.13)20 ns6n137HCPL263010000TA=25℃|VCM| =50V (Peak)IF=0mA VOH (Min.)= 2.0V RL = 350Ω(10)(Fig. 14) HCPL2601HCPL26315000 10000 V/μs |CMH|Common Mode Transient Immunity (at Output HIGH Level) 共模瞬态抑制比(输出高电平)|VCM| = 400VHCPL261110000 150006n137HCPL263010000RL = 350Ω IF = 7.5mA VOL(Max.)= 0.8V TA = 25℃(11) (Fig. 14) HCPL2601HCPL26315000 10000 |CML|Common Mode Transient Immunity (at Output LOW Level) 共模瞬态抑制比(输出低电平)|VCM| = 400VHCPL261110000 15000V/μs电气特性(续) 转移特性(TA = -40 to +85℃ 除非另有说明)Symbol符号 DC Characteristics 直流特性测试条件最小 典型 最大Unit 单位IOH HIGH Level Output Current 高输出电流VCC = 5.5V VO = 5.5V IF =250μA VE = 2.0V(2)100 μAVOL LOW Level Output Current 低电平输出电流 VCC = 5.5V IF = 5mA VE = 2.0V ICL = 13mA(2).35 0.6 VIFT Input Threshold Current 输入阈值电流VCC = 5.5V VO = 0.6V VE =2.0V IOL = 13mA3 5 mA隔离特性 (Ta= -40 ℃至+85 ℃ ,除非另有说明. ):Symbol符号Characteristics 特性 测试条件最小 典型最大 Unit单位II-OInput-Output Insulation Leakage Current 输入输出绝缘泄漏电流 相对湿度 = 45% TA = 25℃ t= 5s VI-O = 3000 VDC(12) 1.0* μAVISOWithstand Insulation Test Voltage 经受绝缘测试电压) RH < 50% TA = 25℃ II-O ≤2μA t = 1 min.(12)2500VRMS RI-O Resistance (Input to Output)电阻(输入输出 VI-O = 500V(12) 1012 Ω CI-O Capacitance (Input to Output)电容(输入输出) f = 1MHz(12)0.6 pF测试电路和波形 tPLH tPHL tr and tf测试电路tEHL和tELH测试电路的共模瞬态抗扰度光藕隔离器6N137典型应用如图1所示,假设输入端属于模块I,输出端属于模块II。

FAIRCHILD HCPL-0600 数据手册

FAIRCHILD HCPL-0600 数据手册

HIGH SPEED-10 MBit/sLOGIC GATE OPTOCOUPLERSHCPL-0600HCPL-0601DESCRIPTIONThe HCPL-0600/0601 optocouplers consist of an AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline package. This output features an open collector, thereby permitting wired OR outputs. The coupled parameters are guaranteed over the temperature range of -40°C to +85°C. A maximum input signal of 5 mA will provide a minimum output sink current of 13 mA (fan out of 8). An internal noiseA 0.1 µF bypass capacitor must be connected between pins 8 and 5. (See note 1)HIGH SPEED-10 MBit/sLOGIC GATE OPTOCOUPLERS HCPL-0600HCPL-0601*6.3 mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0 mA or lessHIGH SPEED-10 MBit/sLOGIC GATE OPTOCOUPLERS HCPL-0600HCPL-0601ELECTRICAL CHARACTERISTICS (T A = -40°C to +85°C Unless otherwise specified.)INDIVIDUAL COMPONENT CHARACTERISTICSParameter Test Conditions Symbol Min Typ**Max UnitEMITTER(I F = 10 mA)V F 1.8VInput Forward Voltage T A =25°C 1.75Input Reverse Breakdown Voltage (I R = 10 µA)B VR 5.0V Input Capacitance(V F = 0, f = 1 MHz)C IN60pF Input Diode T emperature Coefficient(I F = 10 mA)∆VF/∆T A-1.4mV/°C DETECTORHigh Level Supply Current (V CC = 5.5 V, I F = 0 mA)(V E = 0.5 V)I CCH710mALow Level Supply Current (V CC = 5.5 V, I F = 10 mA)(V E = 0.5 V)I CCL913mALow Level Enable Current(V CC = 5.5 V, V E = 0.5 V)I EL-0.8-1.6mA High Level Enable Current(V CC = 5.5 V, V E = 2.0 V)I EH-0.6-1.6mA High Level Enable Voltage(V CC = 5.5 V, I F = 10 mA)V EH 2.0V Low Level Enable Voltage(V CC = 5.5 V, I F = 10 mA) (Note 2)V EL0.8VSWITCHING CHARACTERISTICS (T A = -40°C to +85°C, V CC = 5 V, I F = 7.5 mA Unless otherwise specified.) AC Characteristics Test Conditions Device Symbol Min Typ Max UnitPropagation Delay Time to Output High Level(Note 3)(T A =25°C)All T PLH204575ns (R L = 350Ω, C L = 15 pF) (Fig. 12)100Propagation Delay Time to Output Low Level(Note 4)(T A =25°C)All T PHL254575ns (R L = 350Ω, C L = 15 pF) (Fig. 12)100Pulse Width Distortion(R L = 350Ω, C L = 15 pF) (Fig. 12)All|T PHL-T PLH|335nsOutput Rise Time (10-90%)(R L = 350Ω, C L = 15 pF)(Note 5) (Fig. 12)All t r50nsOutput Fall Time (90-10%)(R L = 350Ω, C L = 15 pF)(Note 6) (Fig. 12)All t f12nsEnable Propagation Delay Timeto Output High Level (I F = 7.5 mA, V EH = 3.5 V)(R L = 350Ω, C L = 15 pF)(Note 7) (Fig. 13)All t ELH20nsEnable Propagation Delay Timeto Output Low Level (I F = 7.5 mA, V EH = 3.5 V)(R L = 350Ω, C L = 15 pF)(Note 8) (Fig. 13)All t EHL20nsCommon ModeT ransient Immunity (at Output High Level)(R L = 350Ω) (T A =25°C)(I F = 0 mA, V OH (Min.) = 2.0 V)(Note 9)(Fig. 14)|V CM| = 10 V HCPL-0600|CM H|10,000V/µs|V CM| = 50 V HCPL-0601500010,000Common ModeT ransient Immunity (at Output Low Level)(R L = 350Ω) (T A =25°C)(I F = 7.5 mA, V OL (Max.) = 0.8 V)(Note 10)(Fig. 14)|V CM| = 10 V HCPL-0600|CM H|10,000V/µs|V CM| = 50 V HCPL-0601500010,000HCPL-0600HCPL-0601** All typical values are at V CC = 5 V , T A = 25°C1.The V CC supply to each optoisolator must be bypassed by a 0.1µF capacitor or larger. This can be either a ceramic or solidtantalum capacitor with good high frequency characteristic and should be connected as close as possible to the package V CC and GND pins of each device.2.Enable Input - No pull up resistor required as the device has an internal pull up resistor.3.t PLH - Propagation delay is measured from the 3.75 mA level on the HIGH to LOW transition of the input current pulse to the1.5V level on the LOW to HIGH transition of the output voltage pulse. 4.t PHL - Propagation delay is measured from the 3.75 mA level on the LOW to HIGH transition of the input current pulse to the1.5V level on the HIGH to LOW transition of the output voltage pulse.5. t r - Rise time is measured from the 90% to the 10% levels on the LOW to HIGH transition of the output pulse.6.t f - Fall time is measured from the 10% to the 90% levels on the HIGH to LOW transition of the output pulse.7.t ELH - Enable input propagation delay is measured from the 1.5V level on the HIGH to LOW transition of the input voltage pulseto the 1.5V level on the LOW to HIGH transition of the output voltage pulse.8.t EHL - Enable input propagation delay is measured from the 1.5V level on the LOW to HIGH transition of the input voltage pulseto the 1.5V level on the HIGH to LOW transition of the output voltage pulse.9.CM H - The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high state (i.e.,V OUT > 2.0 V). Measured in volts per microsecond (V/µs).10.CM L - The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state(i.e., V OUT < 0.8 V). Measured in volts per microsecond (V/µs).11.Device considered a two-terminal device: Pins 1,2,3 and 4 shorted together, and Pins 5,6,7 and 8 shorted together.TRANSFER CHARACTERISTICS (T A = -40°C to +85°C Unless otherwise speci fied.)DC Characteristics Test ConditionsSymbol MinTyp**Max Unit High Level Output Current (V CC = 5.5 V , V O = 5.5 V)(I F = 250 µA, V E = 2.0 V) (Note 2)I OH 100µA Low Level Output Voltage (V CC = 5.5 V , I F = 5 mA)(V E = 2.0 V , I OL = 13 mA) (Note 2)V OL .350.6V Input Threshold Current(V CC = 5.5 V , V O = 0.6 V ,V E = 2.0 V , I OL = 13 mA)I FT35mAISOLATION CHARACTERISTICS (T A = -40°C to +85°C Unless otherwise speci fied.)CharacteristicsTest ConditionsSymbolMinTyp**MaxUnitInput-OutputInsulation Leakage Current (Relative humidity = 45%)(T A = 25°C, t = 5 s)(V I-O = 3000 VDC)(Note 11)I I-O1.0*µAWithstand Insulation T est Voltage (R H < 50%, T A = 25°C)(Note 11) ( t = 1 min.)V ISO 2500V RMS Resistance (Input to Output)(V I-O = 500 V) (Note 11)R I-O 1012ΩCapacitance (Input to Output)(f = 1 MHz) (Note 11)C I-O0.6pFNOTESHCPL-0600HCPL-0601 TYPICAL PERFORMANCE CURVESHCPL-0600HCPL-0601HCPL-0600HCPL-0601HCPL-0600HCPL-0601HCPL-0600HCPL-0601HCPL-0600HCPL-0601HCPL-0600HCPL-0601MARKING INFORMATIONDefinitions1Fairchild logo2Device number3VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table)4One digit year code, e.g., ‘3’5T wo digit work week ranging from ‘01’ to ‘53’6Assembly package codeHCPL-0600HCPL-0601LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:1.Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or(b) support or sustain life, and (c) whose failure to performwhen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.2. A critical component in any component of a life supportdevice or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.HCPL-0600HCPL-0601。

6N137中文详解详解

6N137中文详解详解

6N137光耦合器是一款用于单通道的高速光耦合器,其内部有一个850 nm波长AlGaAs LED和一个集成检测器组成,其检测器由一个光敏二极管、高增益线性运放及一个肖特基钳位的集电极开路的三极管组成。

具有温度、电流和电压补偿功能,高的输入输出隔离,LSTTL/TTL兼容,高速(典型为10MBd),5mA的极小输入电流。

特性:①转换速率高达10MBit/s;②摆率高达10kV/us;③扇出系数为8;④逻辑电平输出;⑤集电极开路输出;工作参数:最大输入电流,低电平:250uA 最大输入电流,高电平:15mA 最大允许低电平电压(输出高):0.8v 最大允许高电平电压:Vcc 最大电源电压、输出:5.5V 扇出(TTL负载):8个(最多) 工作温度范围:-40°C to +85°C 典型应用:高速数字开关,马达控制系统和A/D转换等6N137光耦合器的内部结构、管脚如图1所示。

6N137光耦合器的真值如表1所示:6N137光耦合器的真值表输入使能输出H H LL H HH L HL L HH NC LL NC H需要注意的是,在6N137光耦合器的电源管脚旁应有—个0.1uF的去耦电容。

在选择电容类型时,应尽量选择高频特性好的电容器,如陶瓷电容或钽电容,并且尽量靠近6N137光耦合器的电源管脚;另外,输入使能管脚在芯片内部已有上拉电阻,无需再外接上拉电阻。

6N137光耦合器的使用需要注意两点:第一是6N137光耦合器的第6脚Vo输出电路属于集电极开路电路,必须上拉一个电阻;第二是6N137光耦合器的第2脚和第3脚之间是一个LED,必须串接一个限流电阻。

6n137的内部结构原理如下图所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

6N137光耦中文资料.docx

6N137光耦中文资料.docx

6N137光耦合器是一款用于单通道的高速光耦合器,其内部有一个850 nm波长AIGaAs LED和一个集成检测器组成,其检测器由一个光敏二极管、高增益线性运放及一个肖特基钳位的集电极开路的三极管组成。

具有温度、电流和电压补偿功能,高的输入输出隔离,LSTTL/TTL兼容,高速(典型为10MBd) ,5mA的极小输入电流。

特性:①转换速率高达10MBit/s;②摆率高达10kV/us;③扇出系数为8;④逻辑电平输岀;⑤集电极开路输岀;工作参数:最大输入电流,低电平:250uA 最大输入电流,高电平:15mA 最大允许低电平电压(输出高):0.8v最大允许高电平电压:Vcc最大电源电压、输出:5.5V扇出(TTL负载):8个(最多)工作温度范围:-40 °C to +85 °C典型应用:高速数字开关,马达控制系统和A/D转换等6N137光耦合器的内部结构、管脚如图1所示。

• 艱梦内容管翟系薮^EDECM ON6N137光耦合器的真值如表1所示:需要注意的是,在6N137光耦合器的电源管脚旁应有一个O.luF的去耦电容。

在选择电容类型时,应尽量选择高频特性好的电容器,如陶瓷电容或钽电容,并且尽量靠近6N137光耦合器的电源管脚;另外,输入使能管脚在芯片内部已有上拉电阻,无需再外接上拉电阻。

6N137光耦合器的使用需要注意两点:第一是6N137光耦合器的第6脚V输出电路属于集电极开路电路,必须上拉一个电阻;第二是6N137光耦合器的第2脚和第3脚之间是一个LED,必须串接一个限流电阻。

高速光耦6N137/HCPL2601 ,HCPL2611,HCPL2630,HCPL2631 中文资料原理如下图所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管反向偏置的光敏管光照后导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

6N137中文详解

6N137中文详解

6N137光耦合器是一款用于单通道的高速光耦合器,其内部有一个850 nm波长AlGaAs LED和一个集成检测器组成,其检测器由一个光敏二极管、高增益线性运放及一个肖特基钳位的集电极开路的三极管组成。

具有温度、电流和电压补偿功能,高的输入输出隔离,LSTTL/TTL兼容,高速(典型为10MBd),5mA的极小输入电流。

特性:①转换速率高达10MBit/s;②摆率高达10kV/us;③扇出系数为8;④逻辑电平输出;⑤集电极开路输出;工作参数:最大输入电流,低电平:250uA 最大输入电流,高电平:15mA 最大允许低电平电压(输出高):0.8v 最大允许高电平电压:Vcc 最大电源电压、输出:5.5V 扇出(TTL负载):8个(最多) 工作温度范围:-40°C to +85°C 典型应用:高速数字开关,马达控制系统和A/D转换等6N137光耦合器的内部结构、管脚如图1所示。

6N137光耦合器的真值如表1所示:6N137光耦合器的真值表输入使能输出H H LL H HH L HL L HH NC LL NC H需要注意的是,在6N137光耦合器的电源管脚旁应有—个0.1uF的去耦电容。

在选择电容类型时,应尽量选择高频特性好的电容器,如陶瓷电容或钽电容,并且尽量靠近6N137光耦合器的电源管脚;另外,输入使能管脚在芯片内部已有上拉电阻,无需再外接上拉电阻。

6N137光耦合器的使用需要注意两点:第一是6N137光耦合器的第6脚Vo输出电路属于集电极开路电路,必须上拉一个电阻;第二是6N137光耦合器的第2脚和第3脚之间是一个LED,必须串接一个限流电阻。

6n137的内部结构原理如下图所示,信号从脚2和脚3输入,发光二极管发光,经片内光通道传到光敏二极管,反向偏置的光敏管光照后导通,经电流-电压转换后送到与门的一个输入端,与门的另一个输入为使能端,当使能端为高时与门输出高电平,经输出三极管反向后光电隔离器输出低电平。

6N137,HCPL-0600,01,11

6N137,HCPL-0600,01,11

Selection Guide
Widebody Minimum CMR 8-Pin DIP (300 Mil) Small-Outline SO-8 (400 Mil) Input On- Single Dual Single Dual Single dV/dt VCM Current Output Channel Channel Channel Channel Channel (V/µs) (V) (mA) Enable Package Package Package Package Package

Ordering Information
HCPL-xxxx is UL Recognized with 3750 Vrms for 1 minute per UL1577. HCNWxxxx is UL Rcognized with 5000 Vrms for 1 minute per UL1577. Option Part Number RoHS Compliant
*5000 V rms/1 Minute rating is for HCNW137/26X1 and Option 020 (6N137, HCPL-2601/11/30/31, HCPL-4661) products only.
TRUTH TABLE (POSITIVE LOGIC) LED ON OFF ON OFF ON OFF ENABLE H H L L NC NC OUTPUT L H H H L H
Applications
• Isolated line receiver • Computer-peripheral interfaces • Microprocessor system interfaces • Digital isolation for A/D, D/A conversion • Switching power supply • Instrument input/output isolation • Ground loop elimination • Pulse transformer replacement • Power transistor isolation in motor drives • Isolation of high speed logic systems

光耦FAIRCHILD_H_HCPL0600和6N137

光耦FAIRCHILD_H_HCPL0600和6N137

光耦FAIRCHILD_H_HCPL0600和6N137HIGH SPEED-10 MBit/sLOGIC GATE OPTOCOUPLERSHCPL-0600HCPL-0601DESCRIPTIONThe HCPL-0600/0601optocouplers consist of a 870 nm AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline package. This output features an open collector, thereby permitting wired OR outputs. The coupled parameters are guaranteed over the temperature range of -40°C to +85°C. A maximum input signal of 5 mA will provide a minimum output sink current of 13 mA (fan out of 8). An internal noiseA 0.1 μF bypass capacitor must be connected between pins8 and 5. (See note 1)HIGH SPEED-10 MBit/sLOGIC GATE OPTOCOUPLERS HCPL-0600HCPL-0601*6.3 mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0 mA or lessHIGH SPEED-10 MBit/sLOGIC GATE OPTOCOUPLERS HCPL-0600HCPL-0601ELECTRICAL CHARACTERISTICS (T A = -40°C to +85°C Unless otherwise speci?ed.)INDIVIDUAL COMPONENT CHARACTERISTICSParameter Test Conditions Symbol Min Typ**Max UnitEMITTER(I F = 10 mA)V F 1.8VInput Forward Voltage T A =25°C 1.75Input Reverse Breakdown Voltage (I R = 10 μA)B VR 5.0V Input Capacitance(V F = 0, f = 1 MHz)C IN60pF Input Diode T emperature Coef?cient(I F = 10 mA)?VF/?T A-1.4mV/°C DETECTORHigh Level Supply Current (V CC = 5.5 V, I F = 0 mA)(V E = 0.5 V)I CCH710mALow Level Supply Current (V CC = 5.5 V, I F = 10 mA)(V E = 0.5 V)I CCL913mALow Level Enable Current(V CC = 5.5 V, V E = 0.5 V)I EL-0.8-1.6mA High Level Enable Current(V CC = 5.5 V, V E = 2.0 V)I EH-0.6-1.6mA High Level Enable Voltage(V CC = 5.5 V, I F = 10 mA)V EH 2.0V Low Level Enable Voltage(V CC = 5.5 V, I F = 10 mA) (Note 2)V EL0.8VSWITCHING CHARACTERISTICS (T A = -40°C to +85°C, V CC = 5 V, I F = 7.5 mA Unless otherwise speci?ed.) AC Characteristics Test Conditions Device Symbol Min Typ Max UnitPropagation Delay Time to Output High Level(Note 3)(T A =25°C)All T PLH204575ns (R L = 350?, C L = 15 pF) (Fig. 12)100Propagation Delay Time to Output Low Level(Note 4)(T A =25°C)All T PHL254575ns (R L = 350?, C L = 15 pF) (Fig. 12)100Pulse Width Distortion(R L = 350?, C L = 15 pF) (Fig. 12)All|TPHL-T PLH|335nsOutput Rise Time (10-90%)(R L = 350?, C L = 15 pF) (Note 5) (Fig. 12)All t r50nsOutput Fall Time (90-10%)(R L = 350?, C L = 15 pF) (Note 6) (Fig. 12)All t f12nsEnable Propagation Delay Timeto Output High Level (I F = 7.5 mA, V EH = 3.5 V)(R L = 350?, C L = 15 pF)(Note 7) (Fig. 13)All t ELH20nsEnable Propagation Delay Timeto Output Low Level (I F = 7.5 mA, V EH = 3.5 V)(R L = 350?, C L = 15 pF)(Note 8) (Fig. 13)All t EHL20nsCommon ModeT ransient Immunity (at Output High Level)(R L = 350?) (T A =25°C)(I F = 0 mA, V OH (Min.) = 2.0 V)(Note 9)(Fig. 14)|V CM| = 10 V HCPL-0600|CM H|10,000V/μs|V CM| = 50 V HCPL-0601500010,000Common ModeT ransient Immunity (at Output Low Level)(R L = 350?) (T A =25°C)(I F = 7.5 mA, V OL (Max.) = 0.8 V)(Note 10)(Fig. 14)|V CM| = 10 V HCPL-0600|CM H|10,000V/μs|V CM| = 50 V HCPL-0601500010,000HCPL-0600HCPL-0601** All typical values are at V CC = 5 V , T A = 25°C1.The V CC supply to each optoisolator must be bypassed bya 0.1μF capacitor or larger. This can be either a ceramic or solidtantalum capacitor with good high frequency characteristic and should be connected as close as possible to the package V CC and GND pins of each device.2.Enable Input - No pull up resistor required as the device has an internal pull up resistor.3.t PLH - Propagation delay is measured from the 3.75 mA level on the HIGH to LOW transition of the input current pulse to the1.5V level on the LOW to HIGH transition of the output voltage pulse. 4.t PHL - Propagation delay is measured from the 3.75 mA level on the LOW to HIGH transition of the input current pulse to the1.5V level on the HIGH to LOW transition of the output voltage pulse.5. t r - Rise time is measured from the 90% to the 10% levels on the LOW to HIGH transition of the output pulse.6.t f - Fall time is measured from the 10% to the 90% levels on the HIGH to LOW transition of the output pulse.7.t ELH - Enable input propagation delay is measured from the 1.5V level on the HIGH to LOW transition of the input voltagepulseto the 1.5V level on the LOW to HIGH transition of the output voltage pulse.8.t EHL - Enable input propagation delay is measured from the 1.5V level on the LOW to HIGH transition of the input voltage pulseto the 1.5V level on the HIGH to LOW transition of the output voltage pulse.9.CM H - The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high state (i.e.,V OUT > 2.0 V). Measured in volts per microsecond (V/μs).10.CM L - The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state(i.e., V OUT < 0.8 V). Measured in volts per microsecond (V/μs).11.Device considered a two-terminal device: Pins 1,2,3 and 4 shorted together, and Pins 5,6,7 and 8 shorted together.TRANSFER CHARACTERISTICS (T A = -40°C to +85°C Unless otherwise speci?ed.)DC Characteristics Test ConditionsSymbol MinTyp**Max Unit High Level Output Current (V CC = 5.5 V , V O = 5.5 V)(I F = 250 μA, V E = 2.0 V) (Note 2)I OH 100μA Low Level Output Voltage (V CC = 5.5 V , I F = 5 mA)(V E = 2.0 V , I OL = 13 mA) (Note 2)V OL .350.6V Input Threshold Current(V CC = 5.5 V , V O = 0.6 V ,V E = 2.0 V , I OL = 13 mA)I FT35mAISOLATION CHARACTERISTICS (T A = -40°C to +85°C Unless otherwise speci?ed.)CharacteristicsTest ConditionsSymbolMinTyp**MaxUnitInput-OutputInsulation Leakage Current (Relative humidity = 45%)(T A = 25°C, t = 5 s)(V I-O = 3000 VDC)(Note 11)I I-O1.0*μAWithstand Insulation T est Voltage (R H < 50%, T A = 25°C)(Note 11) ( t = 1 min.)V ISO 2500V RMS Resistance (Input to Output)(V I-O = 500 V) (Note11)R I-O 1012?Capacitance (Input to Output)(f = 1 MHz) (Note 11)C I-O0.6pFNOTESHCPL-0600HCPL-0601 TYPICAL PERFORMANCE CURVESHCPL-0600HCPL-0601HCPL-0600HCPL-0601HCPL-0600HCPL-0601MARKING INFORMATIONDe?nitions1Fairchild logo2Device number3VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table)4One digit year code, e.g., ‘3’5T wo digit work week ranging from ‘01’ to ‘53’6Assembly package codeHCPL-0600HCPL-0601LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:1.Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or(b) support or sustain life, and (c) whose failure to performwhen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.2. A critical component in any component of a life supportdevice or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.HCPL-0600HCPL-0601。

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HIGH SPEED-10 MBit/sLOGIC GATE OPTOCOUPLERSHCPL-0600HCPL-0601DESCRIPTIONThe HCPL-0600/0601optocouplers consist of a 870 nm AlGaAS LED, optically coupled to a very high speed integrated photo-detector logic gate with a strobable output. The devices are housed in a compact small-outline package. This output features an open collector, thereby permitting wired OR outputs. The coupled parameters are guaranteed over the temperature range of -40°C to +85°C. A maximum input signal of 5 mA will provide a minimum output sink current of 13 mA (fan out of 8). An internal noiseA 0.1 µF bypass capacitor must be connected between pins 8 and 5. (See note 1)HIGH SPEED-10 MBit/sLOGIC GATE OPTOCOUPLERS HCPL-0600HCPL-0601*6.3 mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0 mA or lessHIGH SPEED-10 MBit/sLOGIC GATE OPTOCOUPLERS HCPL-0600HCPL-0601ELECTRICAL CHARACTERISTICS (T A = -40°C to +85°C Unless otherwise specified.)INDIVIDUAL COMPONENT CHARACTERISTICSParameter Test Conditions Symbol Min Typ**Max UnitEMITTER(I F = 10 mA)V F 1.8VInput Forward Voltage T A =25°C 1.75Input Reverse Breakdown Voltage (I R = 10 µA)B VR 5.0V Input Capacitance(V F = 0, f = 1 MHz)C IN60pF Input Diode T emperature Coefficient(I F = 10 mA)∆VF/∆T A-1.4mV/°C DETECTORHigh Level Supply Current (V CC = 5.5 V, I F = 0 mA)(V E = 0.5 V)I CCH710mALow Level Supply Current (V CC = 5.5 V, I F = 10 mA)(V E = 0.5 V)I CCL913mALow Level Enable Current(V CC = 5.5 V, V E = 0.5 V)I EL-0.8-1.6mA High Level Enable Current(V CC = 5.5 V, V E = 2.0 V)I EH-0.6-1.6mA High Level Enable Voltage(V CC = 5.5 V, I F = 10 mA)V EH 2.0V Low Level Enable Voltage(V CC = 5.5 V, I F = 10 mA) (Note 2)V EL0.8VSWITCHING CHARACTERISTICS (T A = -40°C to +85°C, V CC = 5 V, I F = 7.5 mA Unless otherwise specified.) AC Characteristics Test Conditions Device Symbol Min Typ Max UnitPropagation Delay Time to Output High Level(Note 3)(T A =25°C)All T PLH204575ns (R L = 350Ω, C L = 15 pF) (Fig. 12)100Propagation Delay Time to Output Low Level(Note 4)(T A =25°C)All T PHL254575ns (R L = 350Ω, C L = 15 pF) (Fig. 12)100Pulse Width Distortion(R L = 350Ω, C L = 15 pF) (Fig. 12)All|T PHL-T PLH|335nsOutput Rise Time (10-90%)(R L = 350Ω, C L = 15 pF)(Note 5) (Fig. 12)All t r50nsOutput Fall Time (90-10%)(R L = 350Ω, C L = 15 pF)(Note 6) (Fig. 12)All t f12nsEnable Propagation Delay Timeto Output High Level (I F = 7.5 mA, V EH = 3.5 V)(R L = 350Ω, C L = 15 pF)(Note 7) (Fig. 13)All t ELH20nsEnable Propagation Delay Timeto Output Low Level (I F = 7.5 mA, V EH = 3.5 V)(R L = 350Ω, C L = 15 pF)(Note 8) (Fig. 13)All t EHL20nsCommon ModeT ransient Immunity (at Output High Level)(R L = 350Ω) (T A =25°C)(I F = 0 mA, V OH (Min.) = 2.0 V)(Note 9)(Fig. 14)|V CM| = 10 V HCPL-0600|CM H|10,000V/µs|V CM| = 50 V HCPL-0601500010,000Common ModeT ransient Immunity (at Output Low Level)(R L = 350Ω) (T A =25°C)(I F = 7.5 mA, V OL (Max.) = 0.8 V)(Note 10)(Fig. 14)|V CM| = 10 V HCPL-0600|CM H|10,000V/µs|V CM| = 50 V HCPL-0601500010,000HCPL-0600HCPL-0601** All typical values are at V CC = 5 V , T A = 25°C1.The V CC supply to each optoisolator must be bypassed by a 0.1µF capacitor or larger. This can be either a ceramic or solidtantalum capacitor with good high frequency characteristic and should be connected as close as possible to the package V CC and GND pins of each device.2.Enable Input - No pull up resistor required as the device has an internal pull up resistor.3.t PLH - Propagation delay is measured from the 3.75 mA level on the HIGH to LOW transition of the input current pulse to the1.5V level on the LOW to HIGH transition of the output voltage pulse. 4.t PHL - Propagation delay is measured from the 3.75 mA level on the LOW to HIGH transition of the input current pulse to the1.5V level on the HIGH to LOW transition of the output voltage pulse.5. t r - Rise time is measured from the 90% to the 10% levels on the LOW to HIGH transition of the output pulse.6.t f - Fall time is measured from the 10% to the 90% levels on the HIGH to LOW transition of the output pulse.7.t ELH - Enable input propagation delay is measured from the 1.5V level on the HIGH to LOW transition of the input voltage pulseto the 1.5V level on the LOW to HIGH transition of the output voltage pulse.8.t EHL - Enable input propagation delay is measured from the 1.5V level on the LOW to HIGH transition of the input voltage pulseto the 1.5V level on the HIGH to LOW transition of the output voltage pulse.9.CM H - The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the high state (i.e.,V OUT > 2.0 V). Measured in volts per microsecond (V/µs).10.CM L - The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state(i.e., V OUT < 0.8 V). Measured in volts per microsecond (V/µs).11.Device considered a two-terminal device: Pins 1,2,3 and 4 shorted together, and Pins 5,6,7 and 8 shorted together.TRANSFER CHARACTERISTICS (T A = -40°C to +85°C Unless otherwise specified.)DC Characteristics Test ConditionsSymbol MinTyp**Max Unit High Level Output Current (V CC = 5.5 V , V O = 5.5 V)(I F = 250 µA, V E = 2.0 V) (Note 2)I OH 100µA Low Level Output Voltage (V CC = 5.5 V , I F = 5 mA)(V E = 2.0 V , I OL = 13 mA) (Note 2)V OL .350.6V Input Threshold Current(V CC = 5.5 V , V O = 0.6 V ,V E = 2.0 V , I OL = 13 mA)I FT35mAISOLATION CHARACTERISTICS (T A = -40°C to +85°C Unless otherwise specified.)CharacteristicsTest ConditionsSymbolMinTyp**MaxUnitInput-OutputInsulation Leakage Current (Relative humidity = 45%)(T A = 25°C, t = 5 s)(V I-O = 3000 VDC)(Note 11)I I-O1.0*µAWithstand Insulation T est Voltage (R H < 50%, T A = 25°C)(Note 11) ( t = 1 min.)V ISO 2500V RMS Resistance (Input to Output)(V I-O = 500 V) (Note 11)R I-O 1012ΩCapacitance (Input to Output)(f = 1 MHz) (Note 11)C I-O0.6pFNOTESHCPL-0600HCPL-0601 TYPICAL PERFORMANCE CURVESHCPL-0600HCPL-0601HCPL-0600HCPL-0601HCPL-0600HCPL-0601HCPL-0600HCPL-0601HCPL-0600HCPL-0601MARKING INFORMATIONDefinitions1Fairchild logo2Device number3VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table)4One digit year code, e.g., ‘3’5T wo digit work week ranging from ‘01’ to ‘53’6Assembly package codeHCPL-0600HCPL-0601LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:1.Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or(b) support or sustain life, and (c) whose failure to performwhen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.2. A critical component in any component of a life supportdevice or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.HCPL-0600HCPL-0601。

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