Samsung AMOLED (三星的AM- OLED制程介绍)
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Printed Electronics Asia 2009 MK-RYU 3
Background : Zinc Oxide TFT (High performance)
High mobility
1.E-04 1.E-05 1.E-06 1.E-07 1.E-08
IDS(A)
Large & high resolution display
• rpm=500~3000
•Soft bake : 250~300 oC •Hard bake : 350~450 oC
Printed Electronics Asia 2009 MK-RYU 10
Spin-Coated IZO films : Composition
Zn/In of solution & film
Transmittance [%]
Transparent Display (TD)
100 90 80 70 60 50 40 30 20 10 Transmittance (IZO) 0 350
Eg~3.4 eV
Valence band
450
550 650 Wavelength [nm]
750
Modulation of electrical properties
Bottom Gate (BG), source/drain top-contact (TC) S/D patterning : Dry etching Passivation (PVX) : PECVD-SiO2
Passivation (PECVD SiO2)
SiO2 Mo
Spin-coated IZO PECVD SiNx Glass Sputter-dep. Mo
22% 14% 14% 8%
Annealing Printable ZnO ink
Vacuum Photolitho system
Etc
Spin-coating (SC), Ink-jet printing (IJP)
Back-end Facilities
TFT-Array (Front end)
Low cost & simple process
I. II. III. IV.
Introduction & Background
InZnO (IZO) solution and spin-coated IZO films
IZO-TFTs and AMOLED
Summary & Conclusion
Printed Electronics Asia 2009 MK-RYU 2
AMOLED driven by Solution-Processed Oxide Semiconductor TFTs
Myung-Kwan Ryu Display Laboratory Samsung Advanced Institute of Technology (SAIT)
Contents
1.E-04 1.E-05 1.E-06 1.E-04 1.E-04
Depletion mode
After 250 C-annealing
After S/D etch
1.E-05 1.E-06
After Passivation (SiO2)
1.E-05 1.E-06
Drain current [A]
AES depth profile
10Hale Waihona Puke Baidu 80
IZO(In/Zn=3) Si wafer
Si
Intensity [a.u.]
60 40 20 0 0
In O C Zn
50 100 Sputter time [sec] 150
Printed Electronics Asia 2009 MK-RYU 12
Metal alkoxides, acetyleacetonate, acetate : -(OCH3)x,-(OH2CH3)x, -(CH3COO)x, -(CH3COCHCOCH3)x, Metal salts (nitrate, chloride, oxychloride, hydroxide..) : -(NO3)x, -Clx, -(OH)x, … Our work : Zn(CH3COO)3-2H2O, In(NO3)3 or In(CH3COCHCOCH3)3
Solvent : 2methoxyethanol (2ME), NH3(aq), ethanol, water etc Stabilizer : acid, base, water,..
ex) MEA, DEA, Acetic acid, MOHx, Acetol, Glycine, …
Gelation, precipitation
- Conductor - Semiconductor - Insulator
Transparent TFT
- Electrode - Channel - Dielectric
Printed Electronics Asia 2009 MK-RYU 5
Background : Zinc Oxide (Solution-processibility)
MEA
DEA Glycine
Acetic acid
Acetol
Printed Electronics Asia 2009 MK-RYU 9
Spin-Coated IZO films : Process
Dropping
Spinning
2step-annealing
glass coater Hot plate
ETRI
Yonsei Univ.
TTLA
Yonsei Univ.
Printed Electronics Asia 2009 MK-RYU 7
Our work
High performance TFT-backplane
Channel
: Spin-coated InZnO (IZO)
- Ternary system : relatively simple - Zn- and In-precursor solution - Amorphous : good for uniformity - Performance enhancement by In : Optimization of In/Zn ratio
Background : Oxide semiconductors
Main elements Sub-elements
Binary, ternary, quaternary, … ZnO, In2O3, Ga2O3, SnO2, ZnO-derivatives : InZnO (IZO), GaInZnO (GIZO), ZnSnO (ZTO), InAlO (AIO), InZnSnO (IZTO), AlSnZnO (ATZO), AlSnZnInO (ATZIO), ZnZrO (ZZO), ZnMgO (ZMO), MgInZnO (MIZO), etc
AMOLED driven by solution-processed oxide TFTs
Printed Electronics Asia 2009 MK-RYU 8
IZO-Solution
Precursor : Zn-R’, In-R” (nitrate, acetate, acetylacetonate, halide, hydroxide, etc)
3.5 3.0 2.5
Film
Zn/In
2.0 1.5 1.0 0.5
In/Zn=3 for TFT-channel
0.0 0.0 0.5 1.0 1.5 2.0 Solution 2.5 3.0 3.5
Printed Electronics Asia 2009 MK-RYU 11
Spin-Coated IZO films : Depth profile
a-Si TFT μ=0.6 cm2/Vs
GIZO : Sputter a-Si : PECVD
3.8 μs
High mobility of pixel TFT is required, because the pixel-charging time is significantly decreased by the shortened gate pulse and the RC-delay.
Transparent TFT (ZnO) Nano-ZnO Multi-component (ZnZrO) Ink Jet Printed (IJP) IZO, ZTO
IZO
Oregon State Univ. Oregon State Univ. Cavendish Lab. NCT Univ.
Limitation to cost-down in large-size (>Gen10) fabs. due to huge initial investment for process equipments (Deposition, etching, photolithography)
Printed Electronics Asia 2009 MK-RYU 6
Pixel charging time
Gate pulse FHD (1920 x 1080) 60 Hz
Kwon (IMID2007)
a-GaInZnO TFT μ>2 cm2/Vs
15.4 μs
RC-delay UD (4096 x 2160) 120 Hz
1.E-09 1.E-10 1.E-11 1.E-12 1.E-13
Solution-processed oxide TFT : Trend
ZnO, multi-component ZnO (precursor-type, nano-P/T type) Spin-coating, ink-jet printing. Film formation Temp.=150~600 oC (precursor), RT~200 oC (nano-P/T) T-TFT, AMLCD (Performances of full process integrated TFTs was not good enough…), AMOLED(?)
Spin-Coated IZO films : Solid State Phase
XRD
HR-TEM
amorphous
5 nm
Printed Electronics Asia 2009 MK-RYU 13
Spin-Coated IZO-TFTs : Back-channel etch (BCE) structure
1.E-14 -20
-10
0 V GS(V)
10
20
Printed Electronics Asia 2009 MK-RYU 4
Background : Zinc Oxide (Transparent material)
Wide bandgap
Transparency
Conduction band
Vac. & Photolitho process Solution-process
Substrate
42%
% in total capital costs for TFT-LCD line
Coating, Printing
+
Precursor solution (Printable ink)
Film
Drain current [A]
1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 1.E-12 1.E-13 -40 -30 -20 -10
2003
High μ IJP-ZnO 150~300 oC
Al (S/D)
‘04
‘05
RT nano-ZnO
‘06
Multi-component (GIZO)
‘07
AMLCD (ZnZrO)
4 in, QVGA μ=0.0042 cm2/Vs
‘08
IJP GIZO
‘09
ZnO
Oregon State Univ.
Amorphous IZO
SiNx Mo 2000 A Glass
Printed Electronics Asia 2009 MK-RYU 14
Spin-Coated IZO-TFTs : I-V vs process step (BCE-type)
TFT characteristic at each process step, In:Zn=3:1
Background : Zinc Oxide TFT (High performance)
High mobility
1.E-04 1.E-05 1.E-06 1.E-07 1.E-08
IDS(A)
Large & high resolution display
• rpm=500~3000
•Soft bake : 250~300 oC •Hard bake : 350~450 oC
Printed Electronics Asia 2009 MK-RYU 10
Spin-Coated IZO films : Composition
Zn/In of solution & film
Transmittance [%]
Transparent Display (TD)
100 90 80 70 60 50 40 30 20 10 Transmittance (IZO) 0 350
Eg~3.4 eV
Valence band
450
550 650 Wavelength [nm]
750
Modulation of electrical properties
Bottom Gate (BG), source/drain top-contact (TC) S/D patterning : Dry etching Passivation (PVX) : PECVD-SiO2
Passivation (PECVD SiO2)
SiO2 Mo
Spin-coated IZO PECVD SiNx Glass Sputter-dep. Mo
22% 14% 14% 8%
Annealing Printable ZnO ink
Vacuum Photolitho system
Etc
Spin-coating (SC), Ink-jet printing (IJP)
Back-end Facilities
TFT-Array (Front end)
Low cost & simple process
I. II. III. IV.
Introduction & Background
InZnO (IZO) solution and spin-coated IZO films
IZO-TFTs and AMOLED
Summary & Conclusion
Printed Electronics Asia 2009 MK-RYU 2
AMOLED driven by Solution-Processed Oxide Semiconductor TFTs
Myung-Kwan Ryu Display Laboratory Samsung Advanced Institute of Technology (SAIT)
Contents
1.E-04 1.E-05 1.E-06 1.E-04 1.E-04
Depletion mode
After 250 C-annealing
After S/D etch
1.E-05 1.E-06
After Passivation (SiO2)
1.E-05 1.E-06
Drain current [A]
AES depth profile
10Hale Waihona Puke Baidu 80
IZO(In/Zn=3) Si wafer
Si
Intensity [a.u.]
60 40 20 0 0
In O C Zn
50 100 Sputter time [sec] 150
Printed Electronics Asia 2009 MK-RYU 12
Metal alkoxides, acetyleacetonate, acetate : -(OCH3)x,-(OH2CH3)x, -(CH3COO)x, -(CH3COCHCOCH3)x, Metal salts (nitrate, chloride, oxychloride, hydroxide..) : -(NO3)x, -Clx, -(OH)x, … Our work : Zn(CH3COO)3-2H2O, In(NO3)3 or In(CH3COCHCOCH3)3
Solvent : 2methoxyethanol (2ME), NH3(aq), ethanol, water etc Stabilizer : acid, base, water,..
ex) MEA, DEA, Acetic acid, MOHx, Acetol, Glycine, …
Gelation, precipitation
- Conductor - Semiconductor - Insulator
Transparent TFT
- Electrode - Channel - Dielectric
Printed Electronics Asia 2009 MK-RYU 5
Background : Zinc Oxide (Solution-processibility)
MEA
DEA Glycine
Acetic acid
Acetol
Printed Electronics Asia 2009 MK-RYU 9
Spin-Coated IZO films : Process
Dropping
Spinning
2step-annealing
glass coater Hot plate
ETRI
Yonsei Univ.
TTLA
Yonsei Univ.
Printed Electronics Asia 2009 MK-RYU 7
Our work
High performance TFT-backplane
Channel
: Spin-coated InZnO (IZO)
- Ternary system : relatively simple - Zn- and In-precursor solution - Amorphous : good for uniformity - Performance enhancement by In : Optimization of In/Zn ratio
Background : Oxide semiconductors
Main elements Sub-elements
Binary, ternary, quaternary, … ZnO, In2O3, Ga2O3, SnO2, ZnO-derivatives : InZnO (IZO), GaInZnO (GIZO), ZnSnO (ZTO), InAlO (AIO), InZnSnO (IZTO), AlSnZnO (ATZO), AlSnZnInO (ATZIO), ZnZrO (ZZO), ZnMgO (ZMO), MgInZnO (MIZO), etc
AMOLED driven by solution-processed oxide TFTs
Printed Electronics Asia 2009 MK-RYU 8
IZO-Solution
Precursor : Zn-R’, In-R” (nitrate, acetate, acetylacetonate, halide, hydroxide, etc)
3.5 3.0 2.5
Film
Zn/In
2.0 1.5 1.0 0.5
In/Zn=3 for TFT-channel
0.0 0.0 0.5 1.0 1.5 2.0 Solution 2.5 3.0 3.5
Printed Electronics Asia 2009 MK-RYU 11
Spin-Coated IZO films : Depth profile
a-Si TFT μ=0.6 cm2/Vs
GIZO : Sputter a-Si : PECVD
3.8 μs
High mobility of pixel TFT is required, because the pixel-charging time is significantly decreased by the shortened gate pulse and the RC-delay.
Transparent TFT (ZnO) Nano-ZnO Multi-component (ZnZrO) Ink Jet Printed (IJP) IZO, ZTO
IZO
Oregon State Univ. Oregon State Univ. Cavendish Lab. NCT Univ.
Limitation to cost-down in large-size (>Gen10) fabs. due to huge initial investment for process equipments (Deposition, etching, photolithography)
Printed Electronics Asia 2009 MK-RYU 6
Pixel charging time
Gate pulse FHD (1920 x 1080) 60 Hz
Kwon (IMID2007)
a-GaInZnO TFT μ>2 cm2/Vs
15.4 μs
RC-delay UD (4096 x 2160) 120 Hz
1.E-09 1.E-10 1.E-11 1.E-12 1.E-13
Solution-processed oxide TFT : Trend
ZnO, multi-component ZnO (precursor-type, nano-P/T type) Spin-coating, ink-jet printing. Film formation Temp.=150~600 oC (precursor), RT~200 oC (nano-P/T) T-TFT, AMLCD (Performances of full process integrated TFTs was not good enough…), AMOLED(?)
Spin-Coated IZO films : Solid State Phase
XRD
HR-TEM
amorphous
5 nm
Printed Electronics Asia 2009 MK-RYU 13
Spin-Coated IZO-TFTs : Back-channel etch (BCE) structure
1.E-14 -20
-10
0 V GS(V)
10
20
Printed Electronics Asia 2009 MK-RYU 4
Background : Zinc Oxide (Transparent material)
Wide bandgap
Transparency
Conduction band
Vac. & Photolitho process Solution-process
Substrate
42%
% in total capital costs for TFT-LCD line
Coating, Printing
+
Precursor solution (Printable ink)
Film
Drain current [A]
1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 1.E-12 1.E-13 -40 -30 -20 -10
2003
High μ IJP-ZnO 150~300 oC
Al (S/D)
‘04
‘05
RT nano-ZnO
‘06
Multi-component (GIZO)
‘07
AMLCD (ZnZrO)
4 in, QVGA μ=0.0042 cm2/Vs
‘08
IJP GIZO
‘09
ZnO
Oregon State Univ.
Amorphous IZO
SiNx Mo 2000 A Glass
Printed Electronics Asia 2009 MK-RYU 14
Spin-Coated IZO-TFTs : I-V vs process step (BCE-type)
TFT characteristic at each process step, In:Zn=3:1