5.PolyEtchIntroduction专题培训课件
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•Dry etch mechanism
P.2
Etch Process Sequence
P.3
Polysilicon Etch – Process step
Process steps: Breakthrough
Removal of native oxide, energetic Ar+ bombardment Main etch
Poly etcher introduction – TEL 88SCCM
TEL 88SCCM : DT etch
P.15
Poly etcher introduction – TEL 88SCCM
High
Plasma
Plasma density
Matcher
C l2
C F 4/O 2
C F4 and C H F3 C F4 and C H F3
SF6
Wavelength (Å)
2614 3962 2882 6156 3370 3862 7037 6740 7037 4835 6156 2535 7037
E m itter A lC l Al Si O N2 CN F N F CO O P F
P.8
Process gas introduction
P.9
Process gas introduction – Poly etch
Poly/Metal etch used gas
EQ
PROCESS
HBr
LAM9400 DTPHM
TEL / AMAT DT
Recess PLN etch
AMAT DPS
High poly etch rate, Cl and HBr chemistry Endpoint / time mode Over etch Precisely profile control by chamber
P.4
Process Control
Endpoint Detection
P.10
Poly etcher introduction
P.Βιβλιοθήκη Baidu1
Poly etcher introduction
P.12
Reactive Ion Etch (RIE)
Combination of chemical and physical etch Plasma process, ion bombardment plus free radicals Misleading name, should be called ion assistant etch
AlCu / Ti / TiN - Cl2 / BCl3 / Ar / N2 / CHF3 / CH4
SiO2 : - CF4 / CHF3 / O2 / Ar - C4F8 / CO /Ar - CHF3 / CO /Ar - C5F8 / C4F6…
Si3N4 : - CF4 / CHF3 / Ar - SF6 / CF4 / HBr / Ar - CH3F / CH2F2 / O2 / Ar
Recess etch
AA
Si etch
AMAT DPS+
Collar etch
GC
Wsi etch
LAM9400
Poly etch
LAM9600 M1
AMAT DPS+ M2
Cl2 BCl3 HCl SF6 NF3 HeO2 O2
CF4 CHF3
CF4 for break through normal gas
P.13
Schematic of an RIE System
Process gases
Process chamber
Wafer
Plasma
Magnet coils
By-products to the pump
Chuck RF Power
Helium For backside cooling
P.14
Outline:
Poly process introduction Process gas introduction Poly etcher introduction
- RIE introduction - Poly chamber introduction
P.1
Poly process introduction
Uniformity : 1 < 2 < 3
P.5
Optical Emission Spectroscopy
P.6
Etch Endpoint Wavelengths
F ilm Al P o ly S i
S i3N 4
S iO 2 PSG , B PSG
W
P.7
E tch an t C l2, B C l3
(IAE) High and controllable etch rate Anisotropic and controllable etch profile Good and controllable selectivity All patterned etches are RIE processes in 8” fabs
光學放射頻譜分析是最有用的終點偵測器， 因為它可以很容易地在蝕刻設備上面且不影響 蝕刻的進行，還有他對反映的些微變化可以靈 敏的偵測，以及可提供有關蝕刻反應過程中， 許多有用的資訊。但是光學放射頻譜分析仍有 一些缺點與限制：一是光線強度正比於蝕刻速 率，所以對蝕刻速率較慢的蝕刻而言將變的難 以偵測。另一個限制則是當蝕刻面積很小時， 信號強度將會不足，而使終點偵測失敗，如二 氧化碳接觸窗的蝕刻。若在接觸窗外提供一大 面積SiO2來蝕刻，則可增強信號強度，但此大 區域的蝕刻速率又大於接觸窗的蝕刻速率，亦 即微負載效應(Microloading Effect) ，因此仍 須要過度蝕刻以確保接觸窗能完全蝕刻。
Process gas introduction
General etch process gas
Polysilicon : - Cl2 / O2 / He - HBr / O2 / He
Si trench - Cl2 / HBr / O2 / He - NF3 / Cl2 / O2 / He
P.2
Etch Process Sequence
P.3
Polysilicon Etch – Process step
Process steps: Breakthrough
Removal of native oxide, energetic Ar+ bombardment Main etch
Poly etcher introduction – TEL 88SCCM
TEL 88SCCM : DT etch
P.15
Poly etcher introduction – TEL 88SCCM
High
Plasma
Plasma density
Matcher
C l2
C F 4/O 2
C F4 and C H F3 C F4 and C H F3
SF6
Wavelength (Å)
2614 3962 2882 6156 3370 3862 7037 6740 7037 4835 6156 2535 7037
E m itter A lC l Al Si O N2 CN F N F CO O P F
P.8
Process gas introduction
P.9
Process gas introduction – Poly etch
Poly/Metal etch used gas
EQ
PROCESS
HBr
LAM9400 DTPHM
TEL / AMAT DT
Recess PLN etch
AMAT DPS
High poly etch rate, Cl and HBr chemistry Endpoint / time mode Over etch Precisely profile control by chamber
P.4
Process Control
Endpoint Detection
P.10
Poly etcher introduction
P.Βιβλιοθήκη Baidu1
Poly etcher introduction
P.12
Reactive Ion Etch (RIE)
Combination of chemical and physical etch Plasma process, ion bombardment plus free radicals Misleading name, should be called ion assistant etch
AlCu / Ti / TiN - Cl2 / BCl3 / Ar / N2 / CHF3 / CH4
SiO2 : - CF4 / CHF3 / O2 / Ar - C4F8 / CO /Ar - CHF3 / CO /Ar - C5F8 / C4F6…
Si3N4 : - CF4 / CHF3 / Ar - SF6 / CF4 / HBr / Ar - CH3F / CH2F2 / O2 / Ar
Recess etch
AA
Si etch
AMAT DPS+
Collar etch
GC
Wsi etch
LAM9400
Poly etch
LAM9600 M1
AMAT DPS+ M2
Cl2 BCl3 HCl SF6 NF3 HeO2 O2
CF4 CHF3
CF4 for break through normal gas
P.13
Schematic of an RIE System
Process gases
Process chamber
Wafer
Plasma
Magnet coils
By-products to the pump
Chuck RF Power
Helium For backside cooling
P.14
Outline:
Poly process introduction Process gas introduction Poly etcher introduction
- RIE introduction - Poly chamber introduction
P.1
Poly process introduction
Uniformity : 1 < 2 < 3
P.5
Optical Emission Spectroscopy
P.6
Etch Endpoint Wavelengths
F ilm Al P o ly S i
S i3N 4
S iO 2 PSG , B PSG
W
P.7
E tch an t C l2, B C l3
(IAE) High and controllable etch rate Anisotropic and controllable etch profile Good and controllable selectivity All patterned etches are RIE processes in 8” fabs
光學放射頻譜分析是最有用的終點偵測器， 因為它可以很容易地在蝕刻設備上面且不影響 蝕刻的進行，還有他對反映的些微變化可以靈 敏的偵測，以及可提供有關蝕刻反應過程中， 許多有用的資訊。但是光學放射頻譜分析仍有 一些缺點與限制：一是光線強度正比於蝕刻速 率，所以對蝕刻速率較慢的蝕刻而言將變的難 以偵測。另一個限制則是當蝕刻面積很小時， 信號強度將會不足，而使終點偵測失敗，如二 氧化碳接觸窗的蝕刻。若在接觸窗外提供一大 面積SiO2來蝕刻，則可增強信號強度，但此大 區域的蝕刻速率又大於接觸窗的蝕刻速率，亦 即微負載效應(Microloading Effect) ，因此仍 須要過度蝕刻以確保接觸窗能完全蝕刻。
Process gas introduction
General etch process gas
Polysilicon : - Cl2 / O2 / He - HBr / O2 / He
Si trench - Cl2 / HBr / O2 / He - NF3 / Cl2 / O2 / He