双通道热释电探测器
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Description:
dual channel; TO39 housing; small chip size; thermal compensation; OpAmp; current mode;feedback 100GOhm;
ultra low power consumption, single supply
110
100 110
100
r e l a t i v e R e s p o n s i v i t y [%]
Frequency [Hz]
110
100 1
10
100
N o i s e [µV /H z ½]
Frequency [Hz]
Aperture size nom ø6.0 mm, single channel 2.7x1.8 mm² Element size / type nom 1.0x1.8 mm² lithium-tantalate with black layer Thermal time constant typ 150 ms
Feedback resistor nom 100 GOhm ±20 %
Feedback capacitor nom 0.2 pF ±0.1 pF
Polarity nom negative signal by positive IR flux change Voltage responsivity (rms)
{500 K, 10 Hz, 25 °C, without filter/window}
min 60,000 V/W
Noise density (rms)
{10 Hz, BW 1 Hz, 25 °C}
max 50 µV/(sqrt[Hz])
Detectivity
{500 K, 10 Hz, 1 Hz, 25 °C, without filter/window} typ 3.0E+08
cm(sqrt[Hz])/W
CMOS operational amplifier nom OpAmp3 Operating supply voltage V+ 2.7 ... 10 V Recommended supply voltage V+ nom V+ = +3 V Supply current {output load 1 MOhm} max 60 µA Offset voltage {25 °C; output load 1 MOhm} V+/2 ±10% Optimal output load nom 330 kOhm Absolute output current max 1 mA Operating / Storage temperature nom -25 ... +85 °C
IR window Combinations of all InfraTec standard narrow band pass filters are available.
Customized filters upon request.
Filter sizes nom rectangular filters: (3.50 ±0.1 x 2.50 ±0.1)mm circular filters: not applicable
standard thickness: 0.50 mm +0.2/-0.1 mm thickness range 0.70 ... 1.10 mm on request
Field of View min CaF2 or BaF2; 0.4 mm thick: not applicable Silicon substrate; 0.5 mm thick: 30°
InfraTec reserves the right to change these specifications at any time without notification.