2SA1952中文资料(rohm)中文数据手册「EasyDatasheet - 矽搜」
2SA1980UF资料
2SA1980UF S e m i c o n d u c t o rPNP Silicon TransistorAbsolute maximum ratings (Ta=25°C)Characteristic Symbol Ratings UnitCollector-Base voltage V CBO -50 V Collector-Emitter voltage V CEO -50 V Emitter-Base voltage V EBO -5 VCollector current I C -150 mA Collector dissipation P C 200 mWJunction temperature T j 150 °C Storage temperatureT stg -55~150 °CElectrical Characteristics (Ta=25°C)Characteristic SymbolTest Condition Min. Typ. Max.UnitCollector-Base breakdown voltage BV CBOI C =-100µA, I E =0 -50 - - V Collector-Emitter breakdown voltage BV CEO I C =-1mA, I B =0 -50 - - VEmitter-Base breakdown voltage BV EBO I E =-10µA, I C =0 -5 - - V Collector cut-off current I CBO V CB =-50V , I E =0 - - -0.1µA Emitter cut-off current I EBO V EB =-5V , I C =0 - - -0.1 µA DC current gainh FE *V CE =-6V , I C =-2mA 70 - 700 -Collector-Emitter saturation voltage V CE(sat) I C =-100mA, I B =-10mA - - -0.3 V Transition frequencyf T V CE =-10V , I C =-1mA 80 - - MHzCollector output capacitance C ob V CB =-10V , I E =0, f=1MHz -47pFNoise figureNFV CE =-6V , I C =-0.1mAf=1KHz, Rg=10K Ω- - 10 dB*: h FE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700.Electrical Characteristic CurvesFig. 5 V CE(sat)-I CThese AUK products are intended for usage in general electronic equipments(Office and communication equipment, measuring equipment, domestic electrification, etc.).Please make sure that you consult with us before you use these AUK products in equipm-ents which require high quality and/or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, traffic signal, combustion central, all types of safety device, etc.).AUK cannot accept liability to any damage which may occur in case these AUK products were used in the mentioned equipments without prior consultation with AUK.。
2SC3392-5-TB-E中文资料(sanyo)中文数据手册「EasyDatasheet - 矽搜」
7 5
3
2
基极 - 发射极
1.0
饱和电压,VBE（星期六） - V
7 5
3
5 --1.0 2 3 5 --10 2 3 5 集电极电流,IC - 毫安
SW时间 - IC
2
1.0
7
µs 5
tstg
3
2
--100 2 3 5 --1000
ITR05072
2SA1338 VCC=20V IC=10IB1=--10IB2
--100 2
集电极电流,IC - 毫安
3 5 7 --1000
ITR05064
fT -- IC
1000
2SA1338
7
VCE=--10V
5
3 2
100
增益带7宽产品,FT - 兆赫
5
3 2
10
--1.0 2 3 5 7 --10 2 3 5 7
--100 2
集电极电流,IC - 毫安
柯布 - VCB
3
2
3 5 7 --1000
ITR05066
2SA1338 f=1MHz
00
0.2
0.4
0.6
基极 - 发射极电压,VBE - V
hFE -- IC
2
1000
7
5
3
Ta=75 °C
2
25°C
100
DC电7流增益,hFE
--25°C
5
3 2 1.0
1000 7 5
2 3 5 7 10
2 3 5 7 100
2SA1338/2SC3392
Symbol
Conditions
2SA2010资料
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
A
mW °C °C
Marking Symbol: AS
−55 to +150
Conditions
Min −15 −5 −15
or m
Typ −140 180 40 35 10 110 −270
−2.0
−9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA
Collector current IC (A)
Collector current IC (A)
−1.5
tf o ht llow tp in :// g pa U na RL so a ni bo c. u ne t l t/s ate c/ st en in f
• Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing.
Ta = 85°C 25°C − 0.1 −25°C 25°C 0 − 0.5 − 0.6 − 0.7 − 0.8 − 0.9 − 1.0 −1.1 − 0.01 − 0.01
or m
Ta = 85°C − 0.1
IB = −10 mA
−1.0
− 0.5
− 0.5
S2SA1774G;中文规格书,Datasheet资料
2SA1774G, S2SA1774G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium.Features•Reduces Board Space•High h FE, 210−460 (typical)•Low V CE(sat), < 0.5V•Available in 8mm, 7−inch/3000 Unit Tape and Reel•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant*MAXIMUM RATINGS (T A = 25°C)Rating Symbol Value Unit Collector − Emitter Voltage V(BR)CBO−60Vdc Collector − Base Voltage V(BR)CEO−50Vdc Emitter − Base Voltage V(BR)EBO−6.0Vdc Collector Current − Continuous I C−100mAdc THERMAL CHARACTERISTICSCharacteristic Symbol Max Unit Power Dissipation (Note 1)P D150mW Junction T emperature T J150°C Storage T emperature Range T stg−55 ~ +150°C Stresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the RecommendedOperating Conditions may affect device reliability.1.Device mounted on a FR−4 glass epoxy printed circuit board using theminimum recommended footprint.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting T echniques ReferenceManual, SOLDERRM/D.MARKING DIAGRAMCOLLECTOR1BASE2EMITTERSC−75CASE 463STYLE 1F9= Device CodeM= Date Code*G= Pb−Free Package(Note: Microdot may be in either location)*Date Code orientation may vary dependingupon manufacturing location.Device Package Shipping†ORDERING INFORMATION2SA1774G SC−75(Pb−Free)3,000/T ape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.2SA1774T1G SC−75(Pb−Free)3,000/T ape & Reel S2SA1774G SC−75(Pb−Free)3,000/T ape & ReelELECTRICAL CHARACTERISTICS (T A = 25°C)Characteristic Symbol Min Typ Max UnitCollector−Base Breakdown Voltage (I C = −50 m Adc, I E = 0)V(BR)CBO−60−−VdcCollector−Emitter Breakdown Voltage (I C = −1.0 mAdc, I B = 0)V(BR)CEO−50−−VdcEmitter−Base Breakdown Voltage (I E = −50 m Adc, I E = 0)V(BR)EBO−6.0−−VdcCollector−Base Cutoff Current (V CB = −30 Vdc, I E = 0)I CBO−−−0.5nAEmitter−Base Cutoff Current (V EB = −5.0 Vdc, I B = 0)I EBO−−−0.5m ACollector−Emitter Saturation Voltage (Note 2) (I C = −50 mAdc, I B = −5.0 mAdc)V CE(sat)−−−0.5VdcDC Current Gain (Note 2)(V CE = −6.0 Vdc, I C = −1.0 mAdc)h FE120−560−Transition Frequency(V CE = −12 Vdc, I C = −2.0 mAdc, f = 30 MHz)f T−140−MHzOutput Capacitance(V CB = −12 Vdc, I E = 0 Adc, f = 1 MHz)C OB− 3.5−pFFigure 1. Collector −Emitter Saturation Voltagevs. Collector Current10.1I C , COLLECTOR CURRENT (mA)V C E , C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )Figure 2. Base −Emitter Saturation Voltage vs.Collector CurrentI C , COLLECTOR CURRENT (mA)V B E (s a t ), B A S E −E M I T T E R S A T U R A T I O N V O L T A G E (V )Figure 3. DC Current Gain vs. CollectorCurrentI C , COLLECTOR CURRENT (mA)h F E , D C C U R R E N T G A I NFigure 4. Saturation RegionI B , BASE CURRENT (mA)V C E (s a t ), C O L L E C T O R −E M I T T E R S A T U R A T I O N V O L T A G E (V )Figure 5. Base −Emitter Turn −ON Voltage vs.Collector CurrentI C , COLLECTOR CURRENT (mA)V B E (O N ), B A S E −E M I T T E R O N V O L T A G E (V )Figure 6. CapacitanceV R , REVERSE VOLTAGE (V)C , C A P A C I T A N C E (p F )10Figure 7. Current Gain Bandwidth Product vs.Collector CurrentI C , COLLECTOR CURRENT (mA)f t a u , C U R R E N T G A I N B A N D W I D T H P R O D U C T (M H z )Figure 8. Safe Operating AreaV CE , COLLECTOR EMITTER VOLTAGE (V)I C , C O L L E C T O R C U R R E N T (m A )PACKAGE DIMENSIONSSTYLE 1:PIN 1.BASE 2.EMITTER 3.COLLECTORSC −75/SOT −416CASE 463ISSUE FNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.DIM MIN NOM MAX MILLIMETERS A 0.700.800.90A10.000.050.10b C 0.100.150.25D 1.55 1.60 1.65E e 1.00 BSC 0.0270.0310.0350.0000.0020.0040.0040.0060.0100.0590.0630.0670.04 BSCMIN NOM MAX INCHES0.150.200.300.0060.0080.012H EL 0.100.150.201.50 1.60 1.700.0040.0060.0080.0610.0630.0650.700.800.900.0270.0310.035ǒmm inchesǓSCALE 10:1*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting T echniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMIS2SA1774G。
2SA1037AK中文资料(rohm)中文数据手册「EasyDatasheet - 矽搜」
lAbsolut最e大 额 定 值
(Ta=25°C)
参数
集电极基极电压
集电极 - 发射极电压
发射极基极电压
集电极电流
集光力 耗散
2SA1037AK, 2SA1576A 2SA2029, 2SA1774
结温
储存温度
符
V V V
I
P
Tj Tstg
限制
60 50 6 0.15 0.2 0.15 150 55 to +150
3/3
2012.01 - Rev.C
○.
芯片中文手册,看全文,戳
Notes
没有拷贝或复制该文件,在部分或全部,则允许不罗姆股份有限公司同意.
此处规定内容如有变更,恕不另行通知. 此处规定内容是介绍ROHM产品（以下简称"产品"）目.如果你想使用任何此类产品,请 务必参阅规格,可从ROHM根据要求获得.
ROHM : VMT3 EIAJ :
(1) Base (2) Emitter (3) Collector
Abbreviated symbol : F
1/3
2012.01 - Rev.C
○.
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2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029
lDimension（s 单位：mm） 2SA1037AK
ROHM : SMT3 EIAJ : SC-59
(1) Emitter (2) Base
(3) Collector
Abbreviated symbol : F
2SA1774
0.15A)
2SA1576A
ROHM : UMT3 EIAJ : SC-70
2SC3998中文资料(sanyo)中文数据手册「EasyDatasheet - 矽搜」
3.5
3.0 2.5 2.0
集电极1.5耗散,电脑 - 含
1.0
No heatsin k
0.5
0
0
20
40
60
80
100 120 140 160
环境温度,钽 -
°C ITR07886
1.0
7
开关时间5 ,SW时间 -
tf
3 2
0.1
5 7 1.0
2
3
OUTPUT
RL
+ 470μF
200V
IC - VCE
30
7A
6A
5A
24
4A
3A
18
2A
1A 集电极1电2 流,IC - 一个
6
0
IB=0A
0
2
4
6
8
10
集电极 - 发射极电压VCE - V
ITR06226
VCE（SAT） - IC
10
5
3 2
1.0
集电极
-
发射极 5
3 2
饱和电压,VCE（SAT） - V
集电极电流,IC - 一个
ITR06227
IC - VBE
28
24
20
16
12
集电极电流,IC - 一个
8
120°C Ta=
2°5C--°4C0
4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
基极 - 发射极电压,VBE - V
ITR06229
No.2732-2/4
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三洋半导体承担所造成的产品使用AT超越,价值观设备故障不承担任何责任即使是瞬间的,额定数值（例如最大额定 值,工作环境范围或其他参数）在产品规格的任何及所有三洋半导体产品上市说明或本文中.
2SA2013中文资料(ONSEMI)中文数据手册「EasyDatasheet - 矽搜」
Unit µA µA MHz
200 (360)400
本文描述或包含没有规范,能够处理应用需要极高的可靠性,如生命支持系统,飞机的控制系统或其他应用程序的 故障可合理预期会导致严重的身体任何及所有SANYO产品和/或财产损失.使用任何SANYO产品中,在此类应用中描述或包 含前与您的SANYO代表就近请教.
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订购数量： ENN6307B
2SA2013 / 2SC5566
2SA2013 / 2SC5566 DC / DC转换器应用
应用
•
PNP / NPN外延平面硅晶体管
继电器驱动器,灯驱动器,电机驱动器,闪存.
特征
• • • • • •
采用FBET和MBIT过程. 高电流容量. 低集电极 - 发射极饱和电压. 高速切换. 超小型封装facilitales 小型化的终端产品. 高允许功耗.
4
IC - VCE
mA 70 mA 80 90mA 100mA A 60m 50mA 40mA 30mA 20mA 10mA
--3
3
--2 集电极电流,IC - 一个 --1
2
--10mA
集电极电流,IC - 一个 1
0
IB=0mA
0 --0.4 --0.8 --1.2 集电极 - 发射极电压VCE - V --1.6 --2.0 IT00152
--25° C
5°C Ta=7 25°C
饱和电压 ）° -C 毫伏 10 ,VCE（SAT --25 7 5 3 2 1.0 0.01 2 3 5 7 0.1
°C a=75 T 25°C
2 3
5 7 1.0
2
3
集电极电流,IC - 一个 10000 7 5 3 2 1000 7 5 集电极 - 发射极 3 2 100 ,VCE（SAT） - 毫伏 饱和电压 7 ° Ta=75 C 5
2SD2568中文资料(rohm)中文数据手册「EasyDatasheet - 矽搜」
0.5 (A)
1
0.5 (A)
1
0.02 BASE SATURATION VOLTAGE : V 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 COLLECTOR CURRENT : I
C
0.5 (A)
1
COLLECTOR CURRENT : I
图4 DC电流增益 - 集电极电流（
1/2
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2SD2568
晶体管电气特Biblioteka 曲线200 (mA) 160
C
Ta=25 C
mA 3.0m A 2.5m A 2.0m A 1.5m A
1 (A)
C
V CE =3V
FE
1000 500 200 100
Ta=25 C
0.5 0.2 0.1 0.05
25°C
FE
2SD2568 CPT3 PQ TL 2500
电气特性
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
(V) 2
BE(sat)
200 100 50 20
2SC5103TLQ中文资料
TransistorsRev.A 1/3High speed switching transistor (60V, 5A)2SC5103z Features1) Low V CE(sat) (Typ. 0.15V at I C / I B = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at I C = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952.z Absolute maximum ratings (T a=25°C)ParameterSymbol V CBO V CEO V EBOI C P C Tj Tstg Limits 10060551150−55 to +150Unit V V V A(DC)10∗A(Pulse)W10W(Tc =25°C)°C °CSingle pulse Pw=100msCollector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperatureCollector power dissipation∗z Packaging specifications and h FEType 2SC5103CPT3Q TL 2500Package h FE CodeBasic ordering unit (pieces)z External dimensions (Unit : mm)2.30.51.00.59.52.50.8Min.1.56.52.3(2)(3)C0.50.650.9(1)0.752.30.91.55.5(3) Emitter(2) Collector (1) Base ROHM : CPT3EIAJ : SC-635.1z Electrical characteristics (T a=25°C)TransistorsRev.A 2/3zElectrical characteristics curvesC O L L E C T O R C U R R E N T : I C (A )COLLECTOR TO EMITTER VOLTAGE : V CE (V)Fig.1 Ground emitter output characteristicsBASE TO EMITTER VOLTAGE : V BE (V)C O L L E C T O R C U R R E N T : I C (A )Fig.2 Ground emitter propagation characteristicsD C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (A)Fig.3 DC current gain vs. collector currentB A S E S A T U R A T I O N V O L T A G E : V B E (s a t ) (V )C O L L E C T O R S A T U R A T I O N V O L T A G E: V C E (s a t ) (V )COLLECTOR CURRENT : I C (A )Fig.4 Collector-emitter saturation voltageBase-emitter saturation voltage −collector currentC O L L E C T O R O U T P U T C A P A C I T W A N C E : C o b (p F )COLLECTOR TO BASE VOLTAGE : V CB (V)Fig.6 Collector output capacitance vs. collector-base voltage−T R A N S I T I O N F R E Q U E N C Y : f T (M H z )EMITTER CURRENT : I E (A)Fig.5 Gain bandwidth product vs.emitter currentS T R A G E T I M E : t s t g (µs )F A L LT I M E : t f (µs )T U R N O N T I M E : t o n (µs )COLLECTOR CURRENT : I C (A)Fig.7 Switching characteristicsCOLLECTOR TO EMITTER VOLTAGE : V CE (V)C O L L E C T O R C U R R E N T : I C (A )Fig.8 Safe operating areaTIME : t (s)T R A N S I E N T T H E R M A L R E S I S T A N C E : R t h (°C /W )Fig.9 Transient thermal resistanceTransistorsRev.A 3/3BBFig.10 Switching characteristic circuitAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.1。
2SA1069中文资料
100 80 60 40 20 0
s/b
1
D
is
Lim
si
ite
pa
tio
n
Li
m
0.1
ite d
0
50
100 TC (˚C)
150
0.01 0.01
0.1
1
10 PW (ms)
100
REVERSE BIAS SAFE OPERATING AREA −10 −8 −6 −4 −2
2SA1069 2SA1069A
IC
90 %
Duty Cycle
tstg tf
2
D14855JJ3V0DS00
2SA1069,1069A
TA = 25 °C
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 50
FORWARD BIAS SAFE OPERATING AREA −30 −10
0 −25
0
50
100 TC (˚C)
150
−100 VCE (V)
−1000
DERATING CURVE OF SAFE OPERATING AREA
TRANSIENT THERMAL RESISTANCE 10 VCE = −20 V Tj = 50 ˚C
dT (%)
rth(j-c) (˚C/W)
VBE(sat) (V) VCE(sat) (V)
VCE = −5.0 V
75˚C 25˚C
IC = 10 A IB
hFE
100
−25˚C
−1.0
VBE(sat)
10
−0.1
VCE(sat)
2SK241中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」
2SK241
4
2003-03-27
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2SK241
5
2003-03-27
特点 漏源电压 栅源电压 漏极电流 漏极功耗 通道温度 存储温度范围
电气特性
特点 栅极漏电流 漏源电压 漏极电流 门源截止电压 远期转移导纳 输入电容 反向传输电容 功率增益 噪声系数
注：I DSS 分类
(Ta = 25°C)
符号
VDS VGS ID PD Tch Tstg
等级
单元
20
V
±5
V
30
mA
Crss
¾
3.0
¾
pF
¾ 0.035 0.050 pF
Gps
VDS = 1赫（图1）
¾
28
¾
dB
¾ 1.7 3.0 dB
O: 1.5~3.5, Y: 3.0~7.0, GR: 6.0~14.0
1
2003-03-27
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¾
V
IDSS
VDS = 10 V, V GS = 0
（注意） 1.5
¾
14 mA
VGS (OFF) VDS = 10 V, I D = 100 mA
¾
¾ -2.5
V
ïY fsï
VDS = 10 V, V GS = 0, f = 1千赫
¾
10
¾
mS
Ciss
VDS = 10 V, V GS = 0, f = 1兆赫
200
mW
125
°C
-55~125
°C
(Ta = 25°C)
JEDEC
―
JEITA
2SA2090中文资料
TransistorsRev.A 1/3Medium power transistor (−60V, −0.5A)2SA2090z Features1) High speed switching. (Tf : Typ. : 35ns at I C = 500mA) 2) Low saturation voltage, typically .(Typ. : −150mV at I C = −100mA, I B = −10mA) 3) Strong discharge power for inductive load and capacitance load.4) Complements the 2SC5868.z ApplicationsHigh speed switching, Low noisez Dimensions (Unit : mm)z StructurePNP Silicon epitaxial planarz Packaging SpecificationsTaping 2SA2090TypeTL 3000PackageBasic ordering unit (pieces)Codez Absolute maximum ratings (T a=25°C)ParameterV V V A mW ∗1 Pw =10ms∗2 Each terminal mounted on a recommended land.∗2∗1°C A °CV CBO V CEO I C P C Tj V EBO I CP TstgSymbol −60−60−6−0.5−1.0500150−55 to +150Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperatureTransistorsRev.A 2/3z Electrical characteristics (T a=25°C)ParameterSymbol BV EBO I CBO I EBO V CE(sat)fTh FE Cob Ton Min.−6−−−120−−−−−400−−1035−−1.0−1.0−−150−300270−−−I E = −100µA V CE = −2V, I C = −50mAV CB = −60V V EB = −4VI C = −100mA, I B = −10mA I C = −500mA,I B1= −50mA I B2=50mAV CC −25VV CE = −10V, I E =100mA, f =10MHz V CB = −10V, I E =0mA, f =1MHz V µA µA MHz mV pF nsTstg −100−ns Tf−60−nsTyp.Max.Unit ConditionsBV CEO −60−−V I C = −100mA Collector-emitter breakdown voltage Collector cut-off current DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall timeEmitter cut-off currentCollector-emitter saturation voltage BV CBO −60−−I C = −1mAV Collector-base breakdown voltage Emitter-base breakdown voltage ∗1∗1∗1 Measured using pulse current∼−z h FE RANKQ 120-270z Electrical characteristic curvesC O L L E C T O R C UR R E N T : I C (m A )COLLECTOR TO EMITTER VOLTAGE : V CE (V)Fig.1 Typical output characteristicsFig.2 Safe operating area COLLECTOR TO EMITTER VOLTAGE : V CE (V)C O L L E C T O R C U R R E N T : I C (A )100.11100Fig.3 Switching Time10.010.1COLLECTOR CURRENT : I C (A)S W I T C H I N G T I M E (n s )Fig.4 DC current gain vs. collectorcurrent ( Ι )COLLECTOR CURRENT : I C (A)D C C U R RE N T G A I N : hF E0.0010.010.110.0010.010.11COLLECTOR CURRENT : I C (A)D C C U R RE N T G A I N : hF EFig.5 DC current gain vs. collectorcurrent (ΙΙ)C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t )(V )COLLECTOR CURRENT : I C (A)Fig.6 Collector-emitter saturation voltagevs. collector current ( Ι )TransistorsRev.A 3/3COLLECTOR CURRENT : I C (A)C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t )(V )Fig.7 Collector-emitter saturation voltagevs. collector current (ΙΙ)COLLECTOR CURRENT : I C (A)B A S E E M I T T E R S A T U R A T I O N V O L T A G E : V B E (s a t ) (V )Fig.8 Base-emitter saturation voltagevs. collector current0.0010.010.11T R A N S I T I O N F R E Q U E N C Y : F T (M H z )EMITTER CURRENT : IE (A )Fig.9 Transition frequency100C O L L E C T O R O U T P U T C A P A C I T A N C E : C O B (p F )BASE TO COLLECTOR VOLTAGE : V CB (V)101Fig.10 Collector output capacitanceC O L L E C T O R C U R R E N T : I C (A )BASE TO EMITTER VOLTAGE : V BE (V)Fig.11 Ground emitter propagationcharacteristicsz Switching characteristics measurement circuitwaveformBase current waveformR L =50ΩV CC 25VTonTstg TfAppendix1-Rev2.0Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact your nearest sales office.ROHM Customer Support SystemTHE AMERICAS / EUROPE / ASIA / JAPANContact us : webmaster@rohm.co.jpAppendix。
2SA1215中文资料(sanken)中文数据手册「EasyDatasheet - 矽搜」
Chopper regulator, DC motor driver, general-purpose –120
Chopper regulator, DC motor driver, general-purpose –120
Audio, seriesregulator, general-purpose
–100 –160 5000
–100 –160 5000
–100 –160 5000
–100 –160 5000
–100 –160 5000
–100 –150 5000
–100 –150 5000
–100 –150 5000
hFE max
Conditions VCE Ic (V) (A)
180 –4 –3
–150
Audio output driver, TV velocity modulation
–180
Audio, general-purpose
–150
Audio, general-purpose
–80
Audio, general-purpose
–120
Audio, general-purpose
–80
Audio, general-purpose
–120
Audio, general-purpose
–140
Audio, general-purpose
–80
Chopper regulator, switch, general-purpose
–70
Audio output driver, TV velocity modulation
VCBO Applications
(V)
ZM4752A中文资料（Diotech）中文数据手册「EasyDatasheet-矽搜」
ZM4752A中文资料（Diotech）中文数据手册「EasyDatasheet-矽搜」1W外延稳压二极管特征小尺寸包装内置应变消除低电感高温焊接：260℃/ 10秒码头玻璃包装已获UL可燃性分类在符合欧盟RoHS指令2002/95/ECAB C机械数据案例：模压玻璃LL-41终端：轴向引线,每M IL-STD-750,方法2026防护极性：颜色频带表示正端安装位置：任意重量：0.25克MELFDimABCMin4. 802. 400. 46Max5. 202. 670. 60绝对最大额定值（极限值）(T A=25℃)符号齐纳电流见表"特色"功耗在TA = 50℃结温存储温度范围Value UnitsP tot T J T STG11)W175-65到+200℃℃1）有效规定,从壳体距离为8mm防护持在环境温度下ELECTRCAL特性(T A=25℃)符号热阻结到环境在IF =200毫安正向电压Min Typ Max1701.21)UnitsR thA V F ℃/W V1）有效规定,从壳体距离在8毫米被防护持在环境温度下1W外延稳压二极管标称Zener电压（1）V Z@ I ZTVZM4729A ZM4730A ZM4731A ZM4732A ZM4733A ZM4734A ZM4735A ZM4736A ZM4737A ZM4738A ZM4739A ZM4740A ZM4741A ZM4742A ZM4743A ZM4744A ZM4745A ZM4746A ZM4747A ZM4748A ZM4749A ZM4750A ZM4751A ZM4752A ZM4753A ZM4754A ZM4755A ZM4756A ZM4757AZM4759AZM4760AZM4761AZM4762AZM4763AZM4764A 注意事项：3.3 3.63.94.34.75.15.66.26.87.58.29.110111213151618202224273036 39 43 47 51 56 62 68 75 82 91 100 Test 当前I ZT mA 76 69 64 58 53 49 45 41 37 34 31 28 2521 19 17 15.5 14 12.5 11.5 10.5 9.5 8.5 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.7 3.3 3.0 2.8 2.5 10 10 9.0 9.0 8.0 7.02.03.54.04.55.07.08.09.010 14 16 202223 25 35 40 45 50 60 70 80 95 110 125 150 175 200 250400 400 400 400 500 550 600 700 700 700 700 700 700 700 700 700 700 700 750 750 750 750 750 1000 1000 1000 1000 1500 15002000 2000 2000 2000 3000 3000 3000 最大反向泄漏电流I RμA100 10050101010101010101010105.05.05.05.05.05.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0@ V R V 1.0 1.0 1.0 1.0 1.01.02.03.04.05.06.07.07.68.49.19.911.412.213.715.216.7 18.2 20.6 22.8 25.1 27.4 29.7 32.7 35.8 38.8 42.6 47.1 51.7 56.0 62.2 69.2 76.0最大浪涌当前I ZS mA 1380 1260 1190 1070 970 890 810 730 660 605 550 500 454 414 380 344 304 285 250 225 205 190 170 150 135 125 11595 90 80 70 65 60 55 50 45极大Zener 当前I ZM mA 276 252 234 217 193 178 162 146 133 121 110 100 91 83 7661575045413834302725232219181614131211109.0最大齐纳阻抗（2）Z ZT@ I ZT Z ZK@ I ZK I ZK mA1.01.01.01.01.01.0 1.0 1.0 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.250.25Type号码根据热平衡和DC（I1.测ZT）试验条件.2.齐纳阻抗从60Hz交流电压具有RM S值等于当交流电流得到衍生齐纳电流10％（I ZT还是I ZK）被叠加在I ZT还是I ZK.Zener 阻抗测量是在两个点,以确防护一在击穿曲线和锋利膝盖消除不稳定单位.ZM4728A THRU ZM4764A额定值和特性曲线图1 - 击穿特性Vz (V)IZ （毫安）10080604020051015202530475047494748474747444742474147394735473347324731图2 - 容许功耗与环境温度P 2 O 宽E R D 所I S S I PAT I O N,佤族T （T ）小号47281.00.80.60.40.2050100150200250环境温度,OC。
2SA1952_1资料
TransistorsRev.A 1/2High-speed Switching Transistor (−60V, −5A)2SA1952z Features1) High speed switching. (tf : Typ. 0.15 µs at I C = −3A) 2) Low V CE(sat). (Typ. −0.2V at I C /I B = −3/−0.15A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5103.z Absolute maximum ratings (T a = 25°C)ParameterSymbol V CBO V CEO V EBOI C P C Tj TstgLimits −100−60−5−5150−55~+150Unit V V V A −10110A(Pulse)WW(Tc =25°C)°C °CCollector-base voltage Collector-emitter voltage Emitter-base voltage Collector currentJunction temperature Storage temperatureCollector power dissipationz Packaging specifications and h FEType 2SA1952CPT3Q 2500TL Package h FE CodeBasic ordering unit (pieces)z External dimensions (Unit : mm)2SA1952(3) Emitter(Source)(2) Collector(Drain)(1) Base(Gate)ROHM : CPT3EIAJ : SC-632.30.51.00.59.52.50.8Min.1.56.52.3(2)(3)C0.50.650.9(1)0.752.30.91.55.55.1z Electrical characteristics (T a = 25°C)TransistorsRev.A 2/2z Electrical characteristics curvesC O L L E C T O R C U R R E N T : I C (A )COLLECTOR TO EMITTER VOLTAGE : V CE (V)Fig.1 Ground emitter output characteristics−−−−−A A BASE TO EMITTER VOLTAGE : V BE (V)C O L L E C T O R C U RR E N T : I C (A )Fig.2 Ground emitter propagation characteristics−−−−−−−−−−COLLECTOR CURRENT : I C (A)D C C U R RE N T G A I N : h E FFig.3 DC current gain vs. collector current −COLLECTOR TO BASE VOLTAGE : V CB (V)C O L L E C T OR O U T P U T C A P A C I T A N C E : C o b (p F )Fig.6 Collector output capacitance vs. collector-base voltage−EMITTER CURRENT : I E (A)T R A N S I T I O N F R E Q U E N C Y : f T (M H z )Fig.5 Resistance ratio vs. emitter currentCOLLECTOR CURRENT : I C (A)C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V ) B A S E S A T U R A T I O N V O L T A G E : V B E (s a t ) (V )Fig.4 Collector-emitter saturation voltagevs. collector current−−−−−−−−−−− Base-emitter saturation voltageCOLLECTOR CURRENT : I C (A)T U R N O N T I M E : t o n (µs )S T R A G E T I M E :t s t g (µs ) F A L L T I M E : t f (µs )Fig.7 Switching characteristics−AppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.1。
2SC2235中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」
10
3
10
30
100
300
1000
Collector current I C (mA)
VCE (sat) – IC
0.5 Common emitter
0.3 IC/IB = 10
(V)
Collector-e0m.1itter
saturation
Ta = 100°C voltage
芯片中文手册,看全文,戳
Байду номын сангаас
东芝晶体管
音频功率放大器应用 驱动级放大器的应用
硅NPN外延型（厘进程）
2SC2235
2SC2235
单位：mm
• 为了补充2SA965.
绝对最大额定值
（TA = 25°C）
特点
符
评级
Unit
集电极基极电压
集电极 - 发射极电压
发射极基极电压 集电极电流 基极电流 集电极耗散功率 结温 存储温度范围
• 请联系您的东芝销售代表联系,以环境问题,如产品的RoHS指令的兼容性. 请遵守产品使用与规范纳入或使用受控物质,包括但不限于,欧盟RoHS指令的所有适用的法律和法规.东芝对出现的不遵守适用的法律法规而导致的损害或 损失不承担任何责任.
4
2009-12-21
V (BR) EBO IE = 1毫安,我C = 0
hFE （注2）
VCE = 5 V, I C =百毫安
VCE (sat) VBE fT Cob
IC = 500毫安,我B =50毫安 VCE = 5 V, I C =500毫安 VCE = 5 V, I C =百毫安 VCB = 10 V, I E = 0,F = 1兆赫
2SA系列(PNP型)三极管参数表
厂商
特性用途
集电极最大直流耗散功率Pcm(W)
集电极最大允许直流电流Icm(A)
集电极-基极击穿电压BVcbo(V)
集电极-发射极击穿电压BVceo(V)
特征频率ft(Hz)
放大倍数
国内外代换型号
2SA0683
PANASONIC
硅PNP三极管,低频功率放大和驱动，配对管2SC1383
1
-1.5
-30
60M
70-240
3CA10D
2SA1013
长电
硅PNP三极管,TO-92，放大
900m
-1
-160
-160
20M
40-310
3CA3F
2SA1013H
TOSHIBA
硅PNP三极管,TO-92，音频放大,彩色电视机场输出，配对管2SC2383
900m
-1
-160
-160
15M
60-200
3CA3F
2SA1013T
2SA1039
硅PNP三极管
300m
-50m
-80
140
820
3CG170C
2SA104
硅PNP三极管,高频射频放大
60m
-10m
-40
50M
30-250
3AG95A
2SA1040
硅PNP三极管
100
-120
60M
2SA1041
硅PNP三极管
100
-120
60M
2SA1042
硅PNP三极管
100
-70
硅PNP三极管,一般放大，配对管2SC1473
750m
-70m
-250
EDI88512CA25B32I中文资料(Microsemi)中文数据手册「EasyDatasheet - 矽搜」
15ns
Min Max
15
13 13
0 0 13 13
13 13
0 0
0 0 08
8 8
0
17ns
Min Max
17
14 14
0 0 14 14
14 14
0 0
0 0 08
8 8
0
20ns
Min Max
20
15 15
0 0 15 15
15 15
0 0
0 0 08
10 10
0
25ns
Min Max
25
4.5
V
0
V
2.2
NOTE:
输入低电压
Stressgreater than those listed under “Absolute Maximum Ratings” may cause permanent damage
to the device. Thisisa stressrating only and functional operation of the device at these or any other
25 A11 24 OE# 23 A10 22 CS# 21 I/O7 20 I/O6
19 I/O5 18 I/O4 17 I/O3
引脚说明
I/O
Data Inputs/Outputs
A0
Address Inputs
WE#
Write Enables
CS#
Chip Selects
OE#
Output Enable
-10
-10
(17ns) — (20 -55ns) —
—
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VCE = -2V,
VCE = -10V, f=30MH Z VCB = -10V, f = 1MHz
IC = -3A
IE = 0.5A
IE = 0A
IC= -3A IB1= -0.15A
IB2=0.15A VCC ⋍ -30V
120
-
270
-
40
-
-
-
-
80
-
MHz
-
130
-
pF
-
-
0.3
ms
-
-
1.5
ms
-
-
0.3
ms
lh FE 排名类别 Rank hFE
Q 120至270
.
2013.07 - Rev.B的
芯片中文手 特性曲线（大 图1地面发射器传输特性
[A]
C
集电极电流：我
= 25°C) 图2典型的输出特性
[A]
C
集电极电流：我
-60
-
-
V
-100
-
-
V
-5
-
-
V
-
-
-10
mA
发射极截止电流
IEBO
VEB = -5V
-
-
-10
mA
集电极 - 发射极
饱和电压
IC = -3A, IB = -0.15A
-
VCE(sat)*1
IC = -4A, IB = -0.2A
-
-
-0.3
V
-
-0.5
V
基极 - 发射
饱和电压
IC = -3A, IB = -0.15A
-0.1
-1
-10
C [A]
集电极电流：我
C [A]
2013.07 - Rev.B的
芯片中文手册,看全文,戳
2SA1952
lElectrical 特性曲线（大
= 25°C)
图5集电极 - 发射极饱和电压 与集电极电流（I）
[V]
CE(sat)
图6集电极 - 发射极饱和电压 与集电极电流（II）
（TA = 25°C）
DC
脉冲
符
VCBO VCEO VEBO
IC ICP PD *1 PD *2 Tj T stg
值
Unit
-100
V
-60
V
-5
V
-5
A
-10
A
1
W
10
W
150
°C
-55 to +150
°C
.
2013.07 - Rev.B的
芯片中文手册,看全文,戳
2SA1952
CB [V]
图10安全工作区
-100
[A]
C
-10
1ms 10ms
-1 集电极电流：我
DC（TC = 25°C）
-0.1
Ta=25ºC
单一非重复脉冲
-0.01
-0.1
-1
集电极 - 发射极电压：V
-10
-100
CE [V]
2013.07 - Rev.B的
芯片中文手册,看全文,戳
2SA1952
PNP -5A -60V中功率晶体管
数据表
参数
VCEO IC
Value
-60V -5A
lFeatures
1）适用于中功率驱动器
2）互补NPN类型：2SC5103
3）低V CE（SAT） VCE（SAT=） -0.3V(Max.) VCE（SAT=） -0.5V(Max.)
数据表
lElectrical 特点
参数
集电极 - 发射极
击穿电压 集电极基 击穿电压 发射基地 击穿电压
集电极截止电流
（TA = 25°C）
符
条件
BV CEO IC = -1mA
BV CBO IC = -50mA
BV EBO IE = -50mA
ICBO VCB = -100V
Min. Typ. Max. Unit
-
V BE(sat)*1
IC = -4A, IB = -0.2A
-
-
-1.2
V
-
-1.5
V
DC电流增益
转换频率 输出电容 开启时间 贮存时间 下降时间
* 1 Plused * 2见开关时间测试电路
h FE 1 *1 h FE 2 *1
f T*1 C ob t在* 2 tSTG* 2 tf *2
VCE = -2V, IC = -1A
与发射极电流
[MHz]
T
基极 - 发射 饱和电压：V
跃迁频率：F
集电极电流：我
C [A]
发射极电流：我
E [A]
2013.07 - Rev.B的
芯片中文手册,看全文,戳
2SA1952
lElectrical 特性曲线（大
= 25°C)
数据表
图9集电极输出电容主场迎战
集电极基极电压
集电极输出电容：玉米棒[pF的] 集电极 - 基极电压：V
-1
[V]
Ta=25ºC
CE(sat)
集电极 - 发射极 饱和电压：V
集电极 - 发射极 -0.1
饱和电压：V
IC / IB =20/1 10/1
数据表
-0.01
-0.01
-0.1
-1
-10
集电极电流：我
C [A]
集电极电流：我
C [A]
图7基地发射极饱和电压
主场迎战集电极电流
[V]
BE(sat)
图8增益带宽积
(IC/IB= -3A/ -0.15A) (IC/IB= -4A / -0.2A)
4）无铅/符合RoHS标准.
lOutline
CPT3
收藏家
Base
发射器
2SA1952 (SC-63)
lInner 电路
收藏家
Base
发射器
lPackaging 规格
型号
包裹
2SA1952
CPT3
包裹
size (mm)
数据表
基地发射极电压：V
BE [V]
COLECTOR TO EMITTE电压：V
CE [V]
图3 DC电流增益与集电极电流（I）
FE
图4 DC电流增益与集电极电流（II）
1000
FE
Ta=25ºC
脉冲
DC电流增益：小时
集电极电流：我
100 DC电流增益：小时
VCE= -5V -2V -1V
10
-0.01
6595
lApplications 电机驱动器,LED驱动器
电源
大坪
code
TL
卷轴尺寸胶带宽度
(mm)
(mm)
330
16
Basic
订购
打标
单位（pcs）
2,500
A1952
lAbsolute 最大额定值
参数 集电极基极电压
集电极 - 发射极电压
发射极基极电压
集电极电流
功耗
结温 储存温度范围
* 1安装在基板上 *2 Tc=25°C