BC847T贴片三极管 SOT-523三极管封装BC847T参数

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Transistors

ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)

Parameter

Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V (BR)CBO I C = 10µA, I E 0 50 V

Collector-emitter breakdown voltage V (BR)CEO I C = 10mA, I B 0 45 V

Emitter-base breakdown voltage V (BR)EBO I E = 1 µA, I C 0 6 V

Collector Cutoff Current I CBO

V CB 30V 15 nA

DC current gain BC847AT

BC847BT BC847CT

h FE

V CE = 5V, I C = 2mA

110 200 420 220

450800

Collector-emitter saturation voltage V CE(sat) I C =10mA, I B =0. 5mA I C =100mA, I B = 5mA 0.25

0.6

V Base-emitter saturation voltage V BE(sat) I C =10mA, I B =0. 5mA I C =100mA, I B = 5mA 0.7 0.9 V Base-emitter voltage V BE(on) V CE = 5V, I C = 2mA V CE = 5V, I C = 10mA 580 660

700770

V

Transition frequency f T V CE = 5 V, I C = 10mA f=100MHz 100

MHz

Collector output capacitance

C ob

V CB =10V,f =

1MHz 4.5 pF

Noise figure BC847BT

BC847CT NF

V CE =5V,f=1KHZ, R S =2K Ω,BW=200HZ

10 4

dB

B,Feb,2013

【南京南山半导体有限公司 — 长电贴片三极管选型资料】

200

400

600

800

1000

0.1

1

10

0.11

10

100

02

4

6

8

10

B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (m V )

AMBIENT TEMPERATURE T a ()

℃

BC847T

Typical Characteristics

I h ——

REVERSE VOLTAGE V (V)

C A P A C I T A N C E C (p F )

C O L L E C T O R C U R R E N T I C (m A )

Static Characteristic

C O L L E C T O R C U R R E N T I C (m A )

B,Feb,2013

【南京南山半导体有限公司 — 长电贴片三极管选型资料】

【南京南山半导体有限公司 — 长电贴片三极管选型资料】

The bottom gasket

The top gasket

3000×1 PCS

3000×15 PCS

Label on the Reel

Label on the Inner Box

Label on the Outer Box

QA Label

Seal the box with the tape

Seal the box with the tape

Stamp “EMPTY” on the empty box

Inner Box: 210 mm × 208 mm × 203 mm

Outer Box: 440 mm × 440 mm × 230 mm