C1815贴片三极管 SOT-89三极管封装C1815参数

Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
Transition frequency
Symbol Test conditions
V(BR)CBO IC= 100uA, IE=0
V(BR)CEO IC= 0.1mA, IB=0
ICBO
VCB=60V, IE=0
ICEO
VCE=50V, IB=0
IEBO
VEB= 5V, IC=0
hFE
VCE= 6V, IC= 2mA
a
12uA 10uA
8uA 6uA
4uA I =2uA
B
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V (V) CE
VCEsat —— IC
100
T =100 ℃ a
T =25℃ a
VOLTAGE V
(mV)
DC CURRENT GAIN h FE
BEsat
1000
100
10 0.1
1
0.1 0
300
600
900
1200
BASE-EMMITER VOLTAGE V (mV) BE
Cob/Cib —— VCB/VEB
50
f=1MHz
I =0/I =0
E
C
T =25 ℃ a
10
C ib
C ob
0.1 0.1
1
REVERSE VOLTAGE V (V)
10
20
COLLECTOR POWER DISSIPATION P (mW)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
VCE(sat)
IC=100mA, IB= 10mA
VBE(sat) fT
IC=100mA, IB= 10mA VCE=10V, IC= 1mA, f=30MHz
Min
Typ
60
50
130 80
Unit V V V mA
mW ℃ ℃
Max Unit
V
V
0.1
uA
0.1
uA
0.1
uA
400
0.25
V
1
Dimensions In Millimeters
Min.
Max.
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Dimensions In Inches
2000 1000
(mV)
CEsat
VOLTAGE V
C1815
hFE ห้องสมุดไป่ตู้— IC
T =100℃ a
T =25℃ a
COMMON EMITTER V = 6V
CE
1
10
COLLECTOR CURRENT I (mA) C
100 150
VBEsat —— IC
T =25℃ a T =100 ℃ a
BASE-EMITTER SATURATION
SOT-23
FEATURES Power dissipation
MARKING : HF
1. BASE 2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Plastic bag
Label on the Reel 1000×1 PCS
The top gasket
Seal the box with the tape
Stamp “EMPTY” on the empty box
Seal the box with the tape
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×２０３ mm
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encap sulate Transistors
C1815 TRANSISTOR (NPN)
Min.
Max.
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
The bottom gasket The file folder
C
TRANSITION FREQUENCY f (MHz) T
100 0.1
1000
1
10
COLLECTOR CURREMT I (mA) C
fT —— IC
β=10
100 150
100
10 0.1
250
COMMON EMITTER V =10V
CE
T =25℃ a
1
10
100
COLLECTOR CURRENT I (mA) C
V
MHz
CLASSIFICATION OF h FE
Rank Range
L 130-200
H 200-400
B,Mar,2012
Typical Characteristics
COLLECTOR CURRENT I (mA) C
5 4 3 2 1 0
0
500
IC —— VCE
16uA
14uA
COMMON EMITTER T =25℃
PC —— Ta
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃) a
B,Mar,2012
CAPACITANCE C (pF)
【 南京南山半导体有限公司 — 长电三极管选型资料】

Symbol
A b b1 c D D1 E E1 e e1 L
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT I (mA) C
10
1
10
COLLECTOR CURREMT I (mA) C
IC —— VBE
150
100 COMMON EMITTER V = 6V
CE
β=10
100 150
10
=25℃
=100℃
T a
T a
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Value 60 50 5 150 200 150
-55-150
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage