M8050三极管
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors
M8050 TRANSISTOR (NPN)
Power D issipation
Unit
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions
M in
M ax Unit
Collector-base breakdown voltage V (BR)CBO I C = 100μA,I E 0 40 V
Collector-emitter breakdown voltage V (BR)CEO* I C = 1mA, I B 0 25 V Emitter-base breakdown voltage V (BR)EBO I E = 100μA, I C =0 6 V
Collector cut-off current I CBO V CB = 35V, I E =0 0.1 μA Collector cut-off current I CEO V CE = 20V, I B =0 0.1 μA h FE(1) V CE =1V, I C =5mA 45 h FE(2) V CE =1V, I C =100mA 80 400 DC current gain
h FE(3)
V CE =1V, I C =800mA
40
Collector-emitter saturation voltage V CE(sat) I C = 800mA, I B =
80mA 0.5 V Base-emitter saturation voltage V BE(sat) I C =800mA, I B = 80mA
1.2
V
Transition frequency
f T
V CE =6V, I C = 20mA , f=30MHz
150 MHz
* Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%.
TO-92
1.EMITTER
2. BASE
3. COLLECTOR
CLASSIFICATION OF h FE (2) Rank B C D D3
Range
80-160 120-200
160-300 300-400
D ,May,2013
【南京南山半导体有限公司 — 长电三极管选型资料】
0255075100125150M8050
Typical Characteristics
I
h ——
AMBIENT TEMPERATURE T
a ()
℃D,May,2013
【南京南山半导体有限公司 — 长电三极管选型资料】
【南京南山半导体有限公司 — 长电三极管选型资料】
Sponge strip
2000 pcs
Sponge strip The top gasket
Label on the Inner Box
Plastic bag
Label on the Outer Box
Inner Box: 333 mm ×162mm ×43mm
Outer Box: 350 mm × 340mm × 250mm
QA Label
Seal the box with the tape
Stamp “EMPTY” on the empty box
Inner Box: 240 mm ×165mm ×９５mm
Label on the Inner Box
Outer Box: 525 mm × 360mm × 262mm
Label on the Outer Box
QA Label
Seal the box with the tape
Stamp “EMPTY” on the empty box