SFF4N65场效应管MOSFET
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N-CHANNEL POWER MOSFET Array DESCRIPTION
This MOSFET is produced with advanced VDMOS technology of SEMIWILL. This technology enable power MOSFET to have better characteristics , such as fast switching time , low on resistance, low gate charge and especially excellent avalanche characteristics . This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It’s typical application is TV and monitor.
•High ruggedness
•R(Max. 2.0Ω)@V=10V
DS(ON)GS
•Gate Charge (Max.18nC)
•Improved dv/dt Capability
•100% Avalanche Tested
Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2. L = 25mH, I = 4.0A, V = 50V, R =25Ω, Starting T = 25 C AS DD G J
3. I
4.0A, di/dt = 100A/us, V BV , Staring T =25 C SD DD DSS J ≤≤4. Pulse Test : Pulse Width 300us, duty cycle 2%≤≤
5. Essentially independent of operating temperature.
PACKAGE DIMENSIONS TO-220F