in4148中文资料_数据手册_参数

Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
mW 1000
1N 4148
900 800
Ptot 700 600
Relative capacitance versus reverse voltage
Max. 0.5 Max. 1.9
Min. 27.5
Max. 0.45 Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
Black "ST" Brand
XXX
ST
Max. 3.9
Black Cathode Band
Black Part No.
XXX Max. 2.9
ηV
0.45
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
4
2.5
4 0.35 1)
-
pF V
ns K/mW
-
~~~
Rectification Efficiency Measurement Circuit
1N4148
Silicon Epitaxial Planar Switching Diode
Applications • High-speed switching
This diode is also available in MiniMELF case with the type designation LL4148
V(BR)R
100
-
V
V(BR)R
75
-
V
VF
-
1
V
IR
-
25
nA
IR
-
5
µA
IR
-
50
µA
60 VRF =2V
2nF 5K Vo
SEMTECH Capacitance
at VR = 0, f = 1 MHz
Ctot
-
Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
Average Rectified Forward Current
Байду номын сангаас
IF(AV)
200
mA
Non-repetitive Peak Forward Surge Current at t = 1 s
0.5
at t = 1 ms
SEMTECH Min. 27.5 Glass Case DO-35 Dimensions in mm
Min. 27.5
Glass Case DO-34 Dimensions in mm
Absolute Maximum Ratings (Ta = 25℃) Parameter
Symbol
Value
Unit
Subsidiary of Sino-Tech International (BVI) Limited ®
Dated: 14/01/2013 Rev: 01
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SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited ®
Dated: 14/01/2013 Rev: 01
1N4148
Admissible power dissipation versus ambient temperature
IFSM
1
A
at t = 1 μs
4
Power Dissipation
Ptot
500 1)
mW
Junction Temperature
Tj
200
℃
Storage Temperature Range
Tstg
- 65 to + 200
℃
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
1.1 Ctot(VR) Ctot(0V)
1.0
1N 4148
Tj=25 oC f=1MHz
500
0.9
SEMTECH 400 300
200
100 0 0
100 Tamb
200 oC
0.8
0.7
0
0
2
4
6
8
10 V
VR
Leakage current versus junction temperature
Reverse Recovery Time at IF = 10 mA to IR = 1 mA, Irr = 0.1 x IR, VR = 6 V, RL = 100 Ω
Thermal Resistance Junction to Ambient Air
Vfr
-
trr
-
RthA
-
Rectification Efficiency at f = 100 MHz, VRF = 2 V
Min.
Max.
Unit
Reverse Breakdown Voltage at IR = 100 µA at IR = 5 µA
Forward Voltage at IF = 10 mA
Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150℃
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-Tech International (BVI) Limited ®
Dated: 14/01/2013 Rev: 01
1N4148
Characteristics at Ta = 25℃ Parameter
Symbol
nA
1N 4148
10 4
5
2
10 3
IR
5
2
10 2
Forward characteristics
mA 10 3
1N 4148
10 2 iF
10
Tj=100o C
Tj=25o C
5
1
2
10 10 -1
5
VR=20V
2
1
0
100
200 oC
10 -2
0
1
2V
Tj VF
SEMTECH ELECTRONICS LTD.