IGBT失效模式介绍

Failure Modes of High Power IGBT Modules

temperature •T j >150°C •T case < -40°C

x t long time over-Current short circuit current >10µs mechanical stress •shock & vibration •forces on terminals •heat sink bending

faulty control •shoot through •high fs

•thermal cycling •power cycling

by

E

C

E

C

R Gate

+15

-15

1,5KExxxA

with transient suppressor Z-Diode

Active V CE clamping

with transient suppressor Z-Diodes

control to detect or SC current

Rg

Rg

D1

C1

temperature •T

j

>150°C

•T

case < -40°C

mechanical stress

•shock & vibration

•forces on terminals

•heat sink bending •thermal cycling

•power cycling

predamage by

surge current

by