RB521CS-30T肖特基二极管规格书

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肖特基(SCHOTTKY)系列二极管

肖特基（SCHOTTKY）系列二极管本文主要介绍济南半导体所研制生产的肖特基二极管系列产品。

介绍军品级、工业品级肖特基二极管的种类、性能特点、正反向电参数。

对产品的正向直流参数、反向温度特性及正向、反向抗烧毁能力等进行了质量分析，并与国外公司制造的同类产品进行了比较。

最后，着重介绍了2DK030高可靠肖特基二极管的性能特点用途，1N60超高速肖特基二极管的性能特点用途，以及功率肖特基二极管在开关电源方面的应用。

本文主要包括下面六个部分：一．肖特基二极管简介二．我所肖特基二极管生产状况三．我所肖特基二极管种类四．我所肖特基二极管的特点及性能质量分析五．介绍我所生产的两种肖特基二极管(1)2DK030高可靠肖特基二极管(2)1N60超高速肖特基二极管六．功率肖特基二极管在开关电源方面的应用下面只对部分常用的参数加以说明(1) V F正向压降Forward Voltage Drop(2) V FM最大正向压降Maximum Forward Voltage Drop(3) V BR反向击穿电压Breakdown Voltage(4) V RMS能承受的反向有效值电压RMS Input Voltage(5) V RWM 反向峰值工作电压Working Peak ReverseVoltage(6) V DC最大直流截止电压Maximum DC BlockingVoltage(7) T rr反向恢复时间Reverse Recovery Time(8) I F(AV)正向电流Forward Current(9) I FSM最大正向浪涌电流Maximum Forward SurgeCurrent(10) I R反向电流Reverse Current(11) T A环境温度或自由空气温度Ambient Temperature(12) T J工作结温Operating Junction Temperature(13) T STG储存温度Storage Temperature Range(16) T C管子壳温Case Temperature一．肖特基二极管简介：同普通硅二极管一样，肖特基二极管也是具有单向导电特性的硅二极管。

RB521G-30-TP;中文规格书,Datasheet资料

RB521G-30100 mASchottky Barrier Diode30 VoltsFeatures• High Reliability•Low Reverse Current and Low Forward Voltage. www.mccsemi .comTMMicro Commercial Components• Lead Free Finish/RoHS Compliant ("P" Suffixdesignates RoHS Compliant. See ordering information)Revision: A 2011/01/01 omp onents 20736 Marilla Street Chatsworth! "# $ % ! "#1 of 3• Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1/RB521G-30www.mccsemi .comRevision: A 2011/01/01Micro Commercial Components2 of 3/Revision: A 2011/01/01Micro Commercial Componentswww.mccsemi .com3 of 34DevicePackingPart Number-TP Tape&Reel: 8Kpcs/ReelOrdering Information :***IMPORTANT NOTICE***Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT***MCC's products are not authorized for use as critical components in life support devices or systems without the express writtenapproval of Micro Commercial Components Corporation.***CUSTOMER AWARENESS***Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below . Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors./分销商库存信息: MICRO-COMMERICAL-CO RB521G-30-TP。

[常用肖特基二极管参数]肖特基二极管原理和常用参数和检测方法

[常用肖特基二极管参数]肖特基二极管原理和常用参数和检测方法篇一: 肖特基二极管原理和常用参数和检测方法肖特基二极管原理肖特基势垒二极管SBD是近年来间世的低功耗、大电流、超高速半导体器件。

，正向导通压降仅0.4V左右，而整流电流却可达到几千安培。

这些优良特性是快恢复二极管所无法比拟的。

中、小功率肖特基整流二极管大多采用封装形式。

基本原理是：在金属和半导体的接触面上，形成肖特基势垒来阻挡反向电压。

肖特基与PN结的整流作用原理有根本性的差异。

其耐压程度只有40V左右。

其特长是：开关速度非常快：反向恢复时间特别地短。

因此，能制作开关二极和低压大电流整流二极管。

肖特基二极管肖特基二极管可以用来制作太阳能电池或发光二极管。

肖特基二极管利用金属与半导体接触所形成的势垒对电流进行控制。

它的主要特点是具有较低的正向压降；另外它是多子参与导电，这就比少子器件有更快的反应速度。

肖特基二极管常用在门电路中作为三极管集电极的箝位二极管，以防止三极管因进入饱和状态而降低开关速度肖特基二极管是贵金属A为正极，以N型半导体B为负极，利用二者接触面上形成的势垒具有整流特性而制成的金属-半导体器件。

因为N型半导体中存在着大量的电子，贵金属中仅有极少量的自由电子，所以电子便从浓度高的B中向浓度低的A中扩散。

显然，金属A中没有空穴，也就不存在空穴自A向B的扩散运动。

随着电子不断从B扩散到A，B表面电子浓度表面逐渐降低，表面电中性被破坏，于是就形成势垒，其电场方向为B→A。

但在该电场作用之下，A中的电子也会产生从A→B的漂移运动，从而消弱了由于扩散运动而形成的电场。

另外使用ZC 25-3型兆欧表和500型万用表的250VDC档测出，内部两管的反向击穿电压VBR依次为140V、135V。

查手册，B82-004的最高反向工作电压VBR=40V。

表明留有较高的安全系数。

篇二: 肖特基二极管的作用肖特基二极管的工作原理肖特基二极管是一种热载流子二极管。

SCHOTTKY BARRIER DIODE LRB520S-商品说明书

DC
D=1/2 Sin(θ＝180)
10
0.001 0.01 0.1
1
10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
0
0
0.1
0.2
0.3
0.4
0.5
AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS
10
15
Ifsm 8.3ms 8.3ms 10 1cyc
5
5
Ifsm t
0
1
10
100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
0
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
10000
Mounted on epoxy board
75 100 125
AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta)
0.5
0.4 DC
0.3 D=1/2
0.2
0A
Io
0V t
VR D=t/T
VR=20V
T Tj=125℃
0.1 Sin(θ＝180)
0
0
25
50
75 100 125
CASE TEMPARATURE:Tc(℃) Derating Curve (Io-Tc)
LESHAN RADIO COMPANY, LTD. LRB520S-40T1G
FORWARD CURRENT:IF(mA)

常用肖特基二极管参数

常用肖特基二极管参数双击自动滚屏发布者：admin 发布时间：2007-2-1 阅读：3310次型号制造商封装If/A Vrrm/V 最大Vf/V1SS294 TOS SC-59 0.1 40 0.60BAT15-099 INF SOT143 0.11 4 0.32BAT54A PS SOT23 0.20 30 0.5010MQ060N IR SMA 0.77 90 0.6510MQ100N IR SMA 0.77 100 0.9610BQ015 IR SMB 1.00 15 0.34SS12 GS DO214 1.00 20 0.50MBRS130LT3 ON - 1.00 30 0.3910BQ040 IR SMB 1.00 40 0.53RB060L-40 ROHM PMDS 1.00 40 0.55RB160L-40 ROHM PMDS 1.00 40 0.55SS14 GS DO214 1.00 40 0.50MBRS140T3 ON - 1.00 40 0.6010BQ060 IR SMB 1.00 60 0.57SS16 GS DO214 1.00 60 0.7510BQ100 IR SMB 1.00 100 0.78MBRS1100T3 ON - 1.00 100 0.7510MQ040N IR SMA 1.10 40 0.5115MQ040N IR SMA 1.70 40 0.55PBYR245CT PS SOT223 2.00 45 0.4530BQ015 IR SMC 3.00 15 0.3530BQ040 IR SMC 3.00 40 0.5130BQ060 IR SMC 3.00 60 0.5830BQ100 IR SMC 3.00 100 0.79STPS340U STM SOD6 3.00 40 0.84MBRS340T3 ON - 3.00 40 0.52RB051L-40 ROHM PMDS 3.00 40 0.45MBRS360T3 ON - 3.00 60 0.7030WQ04FN IR DPAK 3.30 40 0.6230WQ06FN IR DPAK 3.30 60 0.7030WQ10FN IR DPAK 3.30 100 0.9130WQ03FN IR DPAK 3.50 30 0.5250WQ03FN IR DPAK 5.50 30 0.5350WQ06FN IR DPAK 5.50 60 0.57 6CWQ06FN IR DPAK 6.60 60 0.58 6CWQ10FN IR DPAK pr 6.60 100 0.81 1N5817 ON 轴向 1.00 20 0.75 1N5818 ON 轴向 1.00 30 0.55 SB130 GS 轴向 1.00 30 0.501N5819 ON 轴向 1.00 40 0.60 MBR150 ON 轴向 1.00 50 1.00 MBR160 ON 轴向 1.00 60 1.0011DQ10 IR 轴向 1.10 100 0.8511DQ04 IR 轴向 1.10 40 0.5511DQ05 IR 轴向 1.10 50 0.5811DQ06 IR 轴向 1.10 60 0.58MBRS340TR IR SMC 3.00 40 0.431N5820 ON 轴向 3.00 20 0.851N5821 ON 轴向 3.00 30 0.381N5822 ON 轴向 3.00 40 0.52 MBR360 ON 轴向 3.00 60 1.00SS32 GS DO214 3.00 20 3.00 SS34 GS DO214 3.00 40 0.50 31DQ10 IR DO201 3.30 100 0.85 SB530 GS 轴向 5.00 30 0.57SB540 GS DO201 5.00 40 0.57 50SQ080 IR 轴向 5.00 80 0.6650SQ100 IR 轴向 5.00 100 0.66 MBR735 GS TO220 7.50 35 0.84 MBR745 GS TO220 7.50 45 0.84 MBR745 IR TO220 7.50 45 0.84 80SQ040 IR 轴向8.00 40 0.53 STQ080 IR TO220 8.00 80 0.728TQ100 TO220 8.00 100 0.7280SQ040 IR 轴向8.00 40 0.5380SQ035 IR DO204AR 8.00 35 0.53 HFA16PA60C IR TO247CT 8.00 600 1.7095SQ015 轴向9.00 15 0.3190SQ040 轴向9.00 40 0.4810TQ045 TO220 10.00 45 0.57MBR1035 GS TO220 10.00 35 0.84 MBR1045 ON TO220 10.00 45 0.84 STPS1045F ON ISO220 10.00 45 0.64 MBR2060CT ON TO220 10.00 60 0.85 MBR1060 ON TO220 10.00 60 0.95 PBYR10100 PS TO220 10.00 100 0.7010TQ040 IR TO220 10.00 40 0.57 MBR1045 IR TO220 10.00 45 0.8410CTQ150-1 IR D2pak 10.00 150 0.7340L15CTS IR D2pak 10.00 150 0.4185CNQ015A IR D61 80.00 15 0.32150K40A IR D08 150.00 400 1.3312CTQ040 IR TO220 12.00 45 0.73 MBR1545CT IR TO220 pr 15.00 45 0.72 MBR1660 GS TO220 16.00 60 0.7516CTQ080 IR TO220 pr 16.00 80 0.7216CTQ100 IR TO220 pr 16.00 100 0.7216CTQ100-1 IR D2Pak 16.00 100 0.7218TQ045 ON TO220 18.00 45 0.60 HFA16PB120 IR TO247 16.00 1200 3.00 MBR1645 IR TO220AC 16.00 45 0.6319CTQ015 IR TO220 19.00 15 0.3620CTQ045 IR TO220 pr 20.00 45 0.6420TQ045 IR TO220 20.00 45 0.57 MBR2045CT IR TO220 pr 20.00 45 0.84 MBR2090CT IR TO220 pr 20.00 90 0.80 MBR20100CT IR TO220 pr 20.00 100 0.80 MBR20100CT-1IR TO262 20.00 100 0.80 MBR2080CT IR TO220AB 20.00 80 0.85 MBR2545CT IR TO220AB 30.00 45 0.82 MBR3045WT IR TO247 30.00 4532CTQ030 IR TO220 pr 30.00 30 0.4932CTQ303-1 IR D2Pak 30.00 30 0.4930CPQ060 IR TO220 pr 30.00 60 0.62 30CPQ080 IR TO247AC 30.00 80 0.86 30CPQ100 IR TO247 pr 30.00 100 0.86 30CPQ150 IR TO247 pr 30.00 150 1.00 40CPQ040 IR TO247 pr 40.00 40 0.49 40CPQ045 IR TO247 pr 40.00 45 0.49 40CPQ050 IR TO247AA 40.00 50 0.53 40CPQ100 IR TO247 pr 40.00 100 0.77 40L15CT IR TO220AB 40.00 15 0.5347CTQ020 IR TO220 40.00 20 0.3448CTQ060 IR TO220 40.00 60 0.5840L15CW IR TO247 40.00 15 0.5242CTQ030 IR TO220 40.00 30 0.3840CTQ045 IR TO220 40.00 45 0.6840L45CW IR TO247 40.00 45 0.7040CPQ060 ON TO247 40.00 60 0.68 MBR4045WT IR TO247 40.00 45 0.59 MBR4060WT IR TO247 40.00 60 0.77 43CTQ100 IR TO220 40.00 100 0.98 52CPQ030 IR TO247 50.00 30 0.38 MBR6045WT IR TO247pr 60.00 45 0.73 STPS6045CPI ON TOP3I 60.00 45 0.84 65PQ015 IR TO247 65.00 15 0.5072CPQ030 IR TO247AC 70.00 30 0.51 85CNQ015 IR D61 80.00 15 0.3283CNQ100 IR D61 80.00 100 0.6780CPQ020 IR TO247 80.00 20 0.3282CNQ030A IR D61 80.00 30 0.3782CNQ045A IR D61 80.00 45 0.4783CNQ100A IR D61 80.00 100 0.67 120NQ045 IR HALFPAK 120.00 45 0.52 125NQ015 IR D67 120.00 15 0.33 122NQ030 IR D67 120.00 30 0.41 STPS16045TV ON ISOTOP 160.00 45 0.95 182NQ030 IR D67 180.00 30 0.41 200CNQ040 IR TO244AB 200.00 40 0.54 200CNQ045 IR TO244AB 200.00 45 0.54 200CNQ030 IR TO244AB 200.00 30 0.48 STPS24045TV ON ISOTOP 240.00 45 0.91 203CMQ080 IR TO244 200.00 80 1.03 240NQ045 IR HALFPAK 240.00 45 0.55301CNQ045 IR TO244 300.00 45 0.59 403CNQ100 IR TO244AB 400.00 100 0.83 440CNQ030 IR TO244AB 440.00 30 0.41。

RB521SB-40 Rev.A Nov.-2022 数据表说明书

Rev.A Nov.-2022 DATA SHEETSOD-323塑封封装肖特基二极管。

Schottky Diode in a SOD-323 Plastic Package.低正向压降，可忽略的反向恢复时间，无卤产品。

Low positive pressure drop, can ignore the reverse recovery time,HF Product.一般用途。

General purpose.PIN1:Cathode PIN2:Anode印章代码/ Marking见印章说明。

See Marking Instructions.描述/ Descriptions特征 / Features用途 / Applications内部等效电路 / Equivalent Circuit 引脚排列/ PinningRev.A Nov.-2022 DATA SHEET参数Parameter符号Symbol数值Rating单位UnitMaximum Repetitive Peak Reverse Voltage V RRM40 VMaximum RMS voltage V RMS28 VMaximum DC Blocking Voltage V DC40 V Maximum Average Forward Rectified CurrentTc=100℃I F（AV）0.2 APeak Forward Surge Current 8.3 ms Single HalfSine Wave Superimposed on Rated Load(JEDEC Method)I FSM13 A Operating and Storage Temperature Range T j,T stg-55~+125 ℃参数Parameter符号Symbol测试条件Test Conditions最小值Min典型值Typ最大值Max单位UnitMaximum Instantaneous Forward Voltage V F I F=0.2A0.6VMaximum DC ReverseCurrent at Rated DC Blocking Voltage I RT a=25℃ 5 uAT a=100℃100uA极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃)电参数曲线图 / Electrical Characteristic Curve外形尺寸图 / Package Dimensions印章说明 / Marking InstructionsHSD说明：H：为公司代码SD：为型号代码Note:H: Company CodeSD: Product Type回流焊温度曲线图(无铅) / Temperature Profile for IR Reflow Soldering(Pb-Free)说明：Note:1、预热温度150～180℃，时间60～90sec;1.Preheating:150~180℃, Time:60~90sec.2、峰值温度245±5℃，时间持续为5±0.5sec; 2.Peak Temp.:245±5℃, Duration:5±0.5sec.3、焊接制程冷却速度为2～10℃/sec. 3. Cooling Speed: 2~10℃/sec.耐焊接热试验条件 / Resistance to Soldering Heat Test Conditions 温度：260±5℃ 时间：10±1 sec. Temp.:260±5℃ Time:10±1 sec包装规格 / Packaging SPEC. 卷盘包装 / REELPackage Type 封装形式Units 包装数量 Dimension 包装尺寸 (unit ：mm 3)Units/Reel只/卷盘Reels/Inner Box 卷盘/盒Units/Inner Box只/盒Inner Boxes/Outer Box盒/箱Units/Outer Box只/箱Reel Inner Box 盒 Outer Box 箱SOD-323 3,000 10 30,000 6 180,000 7〞×8 180×120×180 390×385×205使用说明 / Notices0 20 40 60 80 100 120 140 160 180 200 220 240 260 280Time(sec)350 300 250 200 150 100 50 0T e m p e r a t u r e (℃)。

常用肖特基二极管参数

型号制造商封装If/A Vrrm/V 最大Vf/V1SS294 TOS SC-59 0.1 40 0.60BAT15-099 INF SOT143 0.11 4 0.32 BAT54A PS SOT23 0.20 30 0.5010MQ060N IR SMA 0.77 90 0.6510MQ100N IR SMA 0.77 100 0.9610BQ015 IR SMB 1.00 15 0.34SS12 GS DO214 1.00 20 0.50 MBRS130LT3 ON - 1.00 30 0.3910BQ040 IR SMB 1.00 40 0.53RB060L-40 ROHM PMDS 1.00 40 0.55 RB160L-40 ROHM PMDS 1.00 40 0.55 SS14 GS DO214 1.00 40 0.50MBRS140T3 ON - 1.00 40 0.6010BQ060 IR SMB 1.00 60 0.57SS16 GS DO214 1.00 60 0.7510BQ100 IR SMB 1.00 100 0.78 MBRS1100T3 ON - 1.00 100 0.7510MQ040N IR SMA 1.10 40 0.5115MQ040N IR SMA 1.70 40 0.55PBYR245CT PS SOT223 2.00 45 0.4530BQ015 IR SMC 3.00 15 0.3530BQ040 IR SMC 3.00 40 0.5130BQ060 IR SMC 3.00 60 0.5830BQ100 IR SMC 3.00 100 0.79STPS340U STM SOD6 3.00 40 0.84 MBRS340T3 ON - 3.00 40 0.52RB051L-40 ROHM PMDS 3.00 40 0.45 MBRS360T3 ON - 3.00 60 0.7030WQ04FN IR DPAK 3.30 40 0.6230WQ06FN IR DPAK 3.30 60 0.7030WQ10FN IR DPAK 3.30 100 0.9130WQ03FN IR DPAK 3.50 30 0.5250WQ03FN IR DPAK 5.50 30 0.5350WQ06FN IR DPAK 5.50 60 0.576CWQ06FN IR DPAK 6.60 60 0.586CWQ10FN IR DPAK pr 6.60 100 0.811N5817 ON 轴向 1.00 20 0.751N5818 ON 轴向 1.00 30 0.55SB130 GS 轴向 1.00 30 0.501N5819 ON 轴向 1.00 40 0.60MBR150 ON 轴向 1.00 50 1.00MBR160 ON 轴向 1.00 60 1.0011DQ10 IR 轴向 1.10 100 0.8511DQ04 IR 轴向 1.10 40 0.5511DQ05 IR 轴向 1.10 50 0.5811DQ06 IR 轴向 1.10 60 0.58 MBRS340TR IR SMC 3.00 40 0.431N5820 ON 轴向 3.00 20 0.851N5821 ON 轴向 3.00 30 0.381N5822 ON 轴向 3.00 40 0.52MBR360 ON 轴向 3.00 60 1.00SS32 GS DO214 3.00 20 3.00SS34 GS DO214 3.00 40 0.5031DQ10 IR DO201 3.30 100 0.85SB530 GS 轴向 5.00 30 0.57SB540 GS DO201 5.00 40 0.5750SQ080 IR 轴向 5.00 80 0.6650SQ100 IR 轴向 5.00 100 0.66MBR735 GS TO220 7.50 35 0.84 MBR745 GS TO220 7.50 45 0.84 MBR745 IR TO220 7.50 45 0.8480SQ040 IR 轴向8.00 40 0.53STQ080 IR TO220 8.00 80 0.728TQ100 TO220 8.00 100 0.7280SQ040 IR 轴向8.00 40 0.5380SQ035 IR DO204AR 8.00 35 0.53 HFA16PA60C IR TO247CT 8.00 600 1.70 95SQ015 轴向9.00 15 0.3190SQ040 轴向9.00 40 0.4810TQ045 TO220 10.00 45 0.57MBR1035 GS TO220 10.00 35 0.84 MBR1045 ON TO220 10.00 45 0.84 STPS1045F ON ISO220 10.00 45 0.64 MBR2060CT ON TO220 10.00 60 0.85 MBR1060 ON TO220 10.00 60 0.95 PBYR10100 PS TO220 10.00 100 0.70 10TQ040 IR TO220 10.00 40 0.57 MBR1045 IR TO220 10.00 45 0.8410CTQ150-1 IR D2pak 10.00 150 0.7340L15CTS IR D2pak 10.00 150 0.4185CNQ015A IR D61 80.00 15 0.32150K40A IR D08 150.00 400 1.3312CTQ040 IR TO220 12.00 45 0.73 MBR1545CT IR TO220 pr 15.00 45 0.72 MBR1660 GS TO220 16.00 60 0.7516CTQ080 IR TO220 pr 16.00 80 0.7216CTQ100 IR TO220 pr 16.00 100 0.72 16CTQ100-1 IR D2Pak 16.00 100 0.72 18TQ045 ON TO220 18.00 45 0.60 HFA16PB120 IR TO247 16.00 1200 3.00 MBR1645 IR TO220AC 16.00 45 0.6319CTQ015 IR TO220 19.00 15 0.3620CTQ045 IR TO220 pr 20.00 45 0.6420TQ045 IR TO220 20.00 45 0.57 MBR2045CT IR TO220 pr 20.00 45 0.84 MBR2090CT IR TO220 pr 20.00 90 0.80 MBR20100CT IR TO220 pr 20.00 100 0.80 MBR20100CT-1IR TO262 20.00 100 0.80 MBR2080CT IR TO220AB 20.00 80 0.85 MBR2545CT IR TO220AB 30.00 45 0.82 MBR3045WT IR TO247 30.00 4532CTQ030 IR TO220 pr 30.00 30 0.4932CTQ303-1 IR D2Pak 30.00 30 0.4930CPQ060 IR TO220 pr 30.00 60 0.6230CPQ080 IR TO247AC 30.00 80 0.86 30CPQ100 IR TO247 pr 30.00 100 0.8630CPQ150 IR TO247 pr 30.00 150 1.00 40CPQ040 IR TO247 pr 40.00 40 0.4940CPQ045 IR TO247 pr 40.00 45 0.4940CPQ050 IR TO247AA 40.00 50 0.53 40CPQ100 IR TO247 pr 40.00 100 0.77 40L15CT IR TO220AB 40.00 15 0.5347CTQ020 IR TO220 40.00 20 0.3448CTQ060 IR TO220 40.00 60 0.5840L15CW IR TO247 40.00 15 0.5242CTQ030 IR TO220 40.00 30 0.3840CTQ045 IR TO220 40.00 45 0.6840L45CW IR TO247 40.00 45 0.7040CPQ060 ON TO247 40.00 60 0.68 MBR4045WT IR TO247 40.00 45 0.59 MBR4060WT IR TO247 40.00 60 0.77 43CTQ100 IR TO220 40.00 100 0.98 52CPQ030 IR TO247 50.00 30 0.38 MBR6045WT IR TO247pr 60.00 45 0.73 STPS6045CPI ON TOP3I 60.00 45 0.84 65PQ015 IR TO247 65.00 15 0.5072CPQ030 IR TO247AC 70.00 30 0.51 85CNQ015 IR D61 80.00 15 0.3283CNQ100 IR D61 80.00 100 0.6780CPQ020 IR TO247 80.00 20 0.3282CNQ030A IR D61 80.00 30 0.3782CNQ045A IR D61 80.00 45 0.4783CNQ100A IR D61 80.00 100 0.67120NQ045 IR HALFPAK 120.00 45 0.52 125NQ015 IR D67 120.00 15 0.33122NQ030 IR D67 120.00 30 0.41 STPS16045TV ON ISOTOP 160.00 45 0.95 182NQ030 IR D67 180.00 30 0.41200CNQ040 IR TO244AB 200.00 40 0.54 200CNQ045 IR TO244AB 200.00 45 0.54 200CNQ030 IR TO244AB 200.00 30 0.48 STPS24045TV ON ISOTOP 240.00 45 0.91 203CMQ080 IR TO244 200.00 80 1.03 240NQ045 IR HALFPAK 240.00 45 0.55 301CNQ045 IR TO244 300.00 45 0.59 403CNQ100 IR TO244AB 400.00 100 0.83 440CNQ030 IR TO244AB 440.00 30 0.41。

RB521CS-30T肖特基二极管规格书

0.90 0.40
0.30
DIMENSIONS: MILLIMETERS

Rev.O 4/4
IR DISPERSION MAP
Ct DISPERSION MAP
20
10 Ifsm
10 Ifsm 8.3ms 8.3ms 1cyc
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
D=1/2
0.06 0.04 0.02 0
0.06 0.04 0.02 0 D=1/2 DC Sin(θ＝180)
100
Mounted on epoxy board IM=10mA IF=100mA
1ms
time
300us
10 0.001
0.1
10
1000
0
TIME:t(s) Rth-t CHARACTERISTICS
Ta=25℃ IF=10mA n=30pcs
25 20 15 10 AVE:2.017uA 5 0
Ta=25℃ VR=10V n=30pcs
19 18 17 16 15 14 13 12 11 10 AVE:17.34pF
Ta=25℃ f=1MHz VR=0V n=10pcs
AVE:270.2mV
VF DISPERSION MAP
1cyc 8.3ms
15
Ifsm t
10
5
5
5 AVE:3.90A 0
0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100

肖特基二极管常用参数大全

肖特基（势垒）二极管（简称SBD）整流二极管的基本原理•FCH10A15型号简称：10A15•主要参数：IF(AV)=10A, VRRM=150V•产品封装：TO-220F•脚位长度：6-12mm•可测试参数：耐压VRRM 正向压降(正向直流电压)VF 漏电IR•型号全名：FCH20A15•型号简称：20A15•主要参数：20A 150V•产品封装：TO-220F•可测试参数：耐压VRRM 正向压降(正向直流电压)VF 漏电IR•在金属（例如铅）和半导体（N型硅片）的接触面上，用已形成的肖特基来阻挡反向电压。

肖特基与PN结的整流作用原理有根本性的差异。

其耐压程度只有40V左右。

其特长是：开关速度非常快：反向恢复时间特别地短。

因此，能制作开关二极和低压大电流整流二极管。

肖特基整流二极管的主要参数•以下是部分常用肖特基二极管型号，以及耐压和整流电流值：肖特基二极管肖特基二极管常用参数大全型号制造商封装 If/A Vrrm/V 最大Vf/V1SS294 TOS SC-59 0.1 400.60BAT15-099 INF SOT143 0.11 4 0.32BAT54A PS SOT23 0.20 300.5010MQ060N IR SMA 0.77 90 0 .6510MQ100N IR SMA 0.77 100 0.9 60.34SS12 GS DO214 1.00 200.50MBRS130LT3 ON - 1.00 30 0 .3910BQ040 IR SMB 1.00 40 0 .53RB060L-40 ROHM PMDS 1.00 40 0.55RB160L-40 ROHM PMDS 1.00 40 0.55SS14 GS DO214 1.00 400.50MBRS140T3 ON - 1.00 40 0 .6010BQ060 IR SMB 1.00 60 0 .57SS16 GS DO214 1.00 600.7510BQ100 IR SMB 1.00 100 0.7 8MBRS1100T3 ON - 1.00 100 0.7 510MQ040N IR SMA 1.10 40 0 .5115MQ040N IR SMA 1.70 40 0 .55PBYR245CT PS SOT223 2.00 45 0.45.3530BQ040 IR SMC 3.00 40 0 .5130BQ060 IR SMC 3.00 60 0 .5830BQ100 IR SMC 3.00 100 0.7 9STPS340U STM SOD6 3.00 40 0.84MBRS340T3 ON - 3.00 40 0 .52RB051L-40 ROHM PMDS 3.00 40 0.45MBRS360T3 ON - 3.00 60 0 .7030WQ04FN IR DPAK 3.30 40 0.6 230WQ06FN IR DPAK 3.30 60 0.7 030WQ10FN IR DPAK 3.30 100 0.9130WQ03FN IR DPAK 3.50 30 0.5 250WQ03FN IR DPAK 5.50 30 0.5 350WQ06FN IR DPAK 5.50 60 0.5 76CWQ06FN IR DPAK 6.60 60 0.586CWQ10FN IR DPAK pr 6.60 100 0.811N5817 ON 轴向 1.00 20 0.751N5818 ON 轴向 1.00 30 0.55SB130 GS 轴向 1.00 30 0.501N5819 ON 轴向 1.00 40 0.60MBR150 ON 轴向 1.00 50 1.00MBR160 ON 轴向 1.00 60 1.0011DQ10 IR 轴向 1.10 100 0.8511DQ04 IR 轴向 1.10 40 0.5511DQ05 IR 轴向 1.10 50 0.5811DQ06 IR 轴向 1.10 60 0.58MBRS340TR IR SMC 3.00 40 0.431N5820 ON 轴向 3.00 20 0.851N5821 ON 轴向 3.00 30 0.381N5822 ON 轴向 3.00 40 0.52MBR360 ON 轴向 3.00 60 1.00SS32 GS DO214 3.00 203.00SS34 GS DO214 3.00 400.5031DQ10 IR DO201 3.30 100 0.85SB530 GS 轴向 5.00 30 0.57SB540 GS DO201 5.00 40 0.5750SQ080 IR 轴向 5.00 80 0.66 50SQ100 IR 轴向 5.00 100 0.66MBR735 GS TO220 7.50 35 0.84MBR745 GS TO220 7.50 45 0.84MBR745 IR TO220 7.50 45 0.8480SQ040 IR 轴向 8.00 40 0.53STQ080 IR TO220 8.00 80 0.728TQ100 TO220 8.00 1000.7280SQ040 IR 轴向 8.00 40 0.5380SQ035 IR DO204AR 8.00 35 0.53HFA16PA60C IR TO247CT 8.00 600 1.7095SQ015 轴向 9.00 15 0.3190SQ040 轴向 9.00 40 0.4810TQ045 TO220 10.00 45 0.5 7MBR1035 GS TO220 10.00 35 0.84MBR1045 ON TO220 10.00 45 0.84STPS1045F ON ISO220 10.00 45 0.64MBR2060CT ON TO220 10.00 60 0.85MBR1060 ON TO220 10.00 60 0.95PBYR10100 PS TO220 10.00 100 0.7010TQ040 IR TO220 10.00 40 0.57 MBR1045 IR TO220 10.00 45 0.8410CTQ150-1 IR D2pak 10.00 150 0.73 40L15CTS IR D2pak 10.00 150 0.41 85CNQ015A IR D61 80.00 15 0.32150K40A IR D08 150.00 400 1.33 12CTQ040 IR TO220 12.00 45 0.73MBR1545CT IR TO220pr 15.00 45 0.72MBR1660 GS TO220 16.00 60 0.75 16CTQ080 IR TO220 pr 16.00 80 0.7216CTQ100 IR TO220 pr 16.00 100 0.7216CTQ100-1 IR D2Pak 16.00 100 0.7218TQ045 ON TO220 18.00 45 0.60HFA16PB120 IR TO247 16.00 1200 3.00MBR1645 IR TO220AC 16.00 45 0.63 19CTQ015 IR TO220 19.00 15 0.3620CTQ045 IR TO220 pr 20.00 45 0.6420TQ045 IR TO220 20.00 45 0.57 MBR2045CT IR TO220 pr 20.00 45 0.84MBR2090CT IR TO220 pr 20.00 90 0.80 MBR20100CT IR TO220 pr 20.00 100 0.80MBR20100CT-1IR TO262 20.00 100 0.80 MBR2080CT IR TO220AB 20.00 80 0.85 MBR2545CT IR TO220AB 30.00 45 0.82 MBR3045WT IR TO247 30.00 4532CTQ030 IR TO220 pr 30.00 30 0.49 32CTQ303-1 IR D2Pak 30.00 30 0.49 30CPQ060 IR TO220 pr 30.00 60 0.62 30CPQ080 IR TO247AC 30.00 80 0.86 30CPQ100 IR TO247 pr 30.00 100 0.8630CPQ150 IR TO247 pr 30.00 150 1.0040CPQ040 IR TO247 pr 40.00 40 0.49 40CPQ045 IR TO247 pr 40.00 45 0.49 40CPQ050 IR TO247AA 40.00 50 0.53 40CPQ100 IR TO247 pr 40.00 100 0.7740L15CT IR TO220AB 40.00 15 0.53 47CTQ020 IR TO220 40.00 20 0.34 48CTQ060 IR TO220 40.00 60 0.5840L15CW IR TO247 40.00 15 0.5242CTQ030 IR TO220 40.00 30 0.38 40CTQ045 IR TO220 40.00 45 0.6840L45CW IR TO247 40.00 45 0.7040CPQ060 ON TO247 40.00 60 0.68 MBR4045WT IR TO247 40.00 45 0.59 MBR4060WT IR TO247 40.00 60 0.77 43CTQ100 IR TO220 40.00 100 0.9852CPQ030 IR TO247 50.00 30 0.38 MBR6045WT IR TO247pr 60.00 45 0.73STPS6045CPI ON TOP3I 60.00 45 0.8465PQ015 IR TO247 65.00 15 0.50 72CPQ030 IR TO247AC 70.00 30 0.5185CNQ015 IR D61 80.00 15 0.32 83CNQ100 IR D61 80.00 100 0.6780CPQ020 IR TO247 80.00 20 0.32 82CNQ030A IR D61 80.00 30 0.37 82CNQ045A IR D61 80.00 45 0.47 83CNQ100A IR D61 80.00 100 0.67 120NQ045 IR HALFPAK 120.00 45 0.52125NQ015 IR D67 120.00 15 0.33 122NQ030 IR D67 120.00 30 0.41 STPS16045TV ON ISOTOP 160.00 45 0.95182NQ030 IR D67 180.00 30 0.41 200CNQ040 IR TO244AB 200.00 40 0.54200CNQ045 IR TO244AB 200.00 45 0.54200CNQ030 IR TO244AB 200.00 30 0.48STPS24045TV ON ISOTOP 240.00 45 0.91203CMQ080 IR TO244 200.00 80 1.03 240NQ045 IR HALFPAK 240.00 45 0.55301CNQ045 IR TO244 300.00 45 0.59 403CNQ100 IR TO244AB 400.00 100 0.83440CNQ030 IR TO244AB 440.00 30 0.41肖特基整流二极管型号额定I（AV）A VRRM V向峰值电压浪涌电流IFSM A 反向恢复时间ns SB020 0.6 20 20 10SB030 0.6 30 20 10SB040 0.6 40 20 101N5817 1 20 25 10 1N5818 1 30 25 10 1N5819 1 40 25 10 SB120 1 20 40 10 SB130 1 30 40 10 SB140 1 40 40 10 SB150 1 50 40 5 SB160 1 60 40 5 SR120 1 20 40 20 SR130 1 30 40 20 SR140 1 40 40 20 SR150 1 50 40 20 SR160 1 60 40 20 SR180 1 80 40 20 SR1A0 1 100 40 20 SB220 2 20 50 20 SB230 2 30 50 20 SB240 2 40 50 20 SB250 2 50 50 20 SB260 2 60 50 20 SR220 2 20 50 10 SR230 2 30 50 10 SR240 2 40 50 10 SR250 2 50 50 10 SR260 2 60 50 10 SR280 2 80 50 10 SR2A0 2 100 50 10 1N5820 3 20 80 20 1N5821 3 30 80 20 1N5822 3 40 80 20 SB320 3 20 80 20 SB330 3 30 80 20 SB340 3 40 80 20 SB350 3 50 80 10 SB360 3 60 80 10 SR320 3 20 80 20 SR330 3 30 80 20 SR340 3 40 80 20 SR350 3 50 80 20 SR360 3 60 80 20 SR380 3 80 80 20 SR3A0 3 100 80 20 SB520 5 20 150 50 SB530 5 30 150 50SB540 5 40 150 50 SB550 5 50 150 25 SB560 5 60 150 25 SR520 5 20 150 50 SR530 5 30 150 50 SR540 5 40 150 50 SR550 5 50 150 25 SR560 5 60 150 25 SR580 5 80 150 25 SR5A0 5 100 150 25。

肖特基二极管型号大全之ASEMI肖特基常见型号

肖特基⼆极管型号⼤全之ASEMI肖特基常见型号编辑-Z肖特基⼆极管最⼤的特点是正向压降VF⽐较⼩。

在相同电流的情况下，其正向压降要⼩得多。

此外，它的恢复时间很短。

它也有⼀些缺点：耐压⽐较低，漏电流稍⼤。

选择时必须充分考虑，肖特基⼆极管通常⽤于对电源的次级输出进⾏整流。

肖特基⼆极管型号⼤全之ASEMI肖特基有哪些常见型号呢？ASEMI肖特基⼆极管型号⼤全封装SMA:SS510、SS310、SS210、SS110、SK310A、SK210A、SK110A等。

封装TO-220：MBR2060AC、SBT40100VICT、MBR10100FCT、MBR10200FAC等。

封装TO-247：MBR60100PT、MBR60200PT、MBR40200PT、MBR30200PT等。

封装TO-263：SBT40100VDC、SBT30100VDC、MBR40100DC、MBR30100DC等。

肖特基⼆极管型号⼤全之肖特基⼆极管封装：分为引线式和表⾯贴装（贴⽚式）封装。

带引线封装的肖特基⼆极管通常⽤作⾼频⼤电流整流⼆极管、续流⼆极管或保护⼆极管。

它有两种封装形式：单管式和双管（双⼆极管）式。

常⽤的有引线式肖特基⼆极管、1N5817、1N5819、MBR1045、MBR20200等型号，也称为插件封装。

肖特基⼆极管型号⼤全之肖特基的作⽤：作⽤还是整流，它的优点是正向电压降低，反向恢复时间快，所以整体损耗会⽐其他⼆极管低很多。

肖特基⼆极管型号⼤全之肖特基⼆极管特性：1、肖特基⼆极管的正向压降远低于快恢复⼆极管，因此⾃⾝功耗⼩，效率⾼。

2、由于反向充电恢复时间极短，适合在⾼频条件下⼯作。

3、能承受⾼浪涌电流。

4、以往肖特基管的反向耐压⼀般在200V以下，但现在最新技术可以做到产品⾼达1000V，市场应⽤前景⼗分⼴阔。

5、⽬前市⾯上常见的肖特基管的最⾼结温为100℃、125℃、150%、175℃（结温越⾼，产品的耐⾼温性能越好。

肖特基二极管型号大全

20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 3 3 5 5 5 5 5 5 5 8 8 8 8 8 8 8 10
45 45 45 45 60 60 60 60 60 100 100 150 150 200 200 45 60 100 150 200 45 60 45 45 60 60 100 150 200 45 45 60 60 100 150 200 45
V F(V) I F(mA)
5000 5000 5000 5000 5000 5000 5000 5000 5000 5000 8000 8000 8000 8000 10000 10000 10000 10000 10000 10000 10000 15000 15000 15000 15000 15000 15000 15000 20000 Type 0.54 0.53 0.69 0.62 0.77 0.8 0.84 0.8 0.85 0.86 0.59 0.55 0.66 0.7 0.58 0.57 0.73 0.67 0.79 0.83 0.88 0.61 0.59 0.75 0.7 0.81 0.84 0.89 0.52 Max 0.6 0.6 0.8 0.7 0.85 0.85 0.88 0.87 0.92 0.9 0.65 0.60 0.70 0.75 0.65 0.65 0.8 0.75 0.85 0.9 0.95 0.7 0.65 0.85 0.8 0.88 0.92 1 0.60 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4
3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 3.00 2.00 2.00 2.00 2.00 3.00 3.00 2.00 2.00 2.00 2.00 2.00 2.00 2.00 2.0型表

RB521G-30T1G肖特基二极管原厂DCY品牌推荐

15
15
14
10
13
AVE:2.017uA 5
12 AVE:17.34pF
11
0
10
IR DISPERSION MAP
Ct DISPERSION MAP
20
Ifsm
1cyc
15
8.3ms
10 AVE:3.90A
5
0 IFSM DISRESION MAP
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
10
10
Ifsm
8.3ms 8.3ms 1cyc
5
5
Ifsm t
0
1
10
100
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
0
1
10
100
TIME:t(ms) IFSM-t CHARACTERISTICS
REVERSE POWER DISSIPATION:PR (W)
FORWARD POWER DISSIPATION:Pf(W)
1000 100
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
IM=10mA
IF=100mA
0.1
0.08 D=1/2
0.06 Sin(θ＝180)
Rev.O 1/4
FORWARD CURRENT:IF(mA)
FORWARD VOLTAGE:VF(mV)
RB521G-30T1G
Electrical characteristic curves (Ta=25°C)

RB521ES-30(DB521ES-30)肖特基二极管DCY品牌原厂推荐

DB521ES-30
lApplication General rectification
lDimensions (Unit : mm)
l Structure
0.380±0.010
Cathodeห้องสมุดไป่ตู้
0.180±0.010 0.600±0.010
D
lFeatures 1) Small silicon package (SMD0603)
-
lElectrical Characteristics (Tj= 25°C) Parameter Forward voltage Reverse current Symbol VF1 IR Conditions IF=10mA VR=10V Min. Typ. Max. Unit 350 1.2 370 7 mV mA
REVERSE CURRENT : IR(mA)
Tj = 150°C
10000 1000 100 10 1 0.1 0.01
10
Tj = 75°C
Tj = 25°C Tj = -25°C 1 0 100 200 300 400 500 600 700 800
0
10
20
30
FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS
0～0.030
Anode
0.280±0.010
0.260±0.010 0.300±0.010
2)High Accuracy Manufacturing Dimension tolerance10mm
DSN0603-2(SMD0603)
3) Low VF
lAbsolute Maximum Ratings (Tc= 25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average forward rectified current

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0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS
0.2
0
10
20
30
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS

Rev.O 2/4
Electricalcharacteristiccurves(Ta=25OC)
0
100
200
300
400
500
600
FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS
300
30
20
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
290 280 270 260 250
CAPACITANCE BETWEEN TERMINALS:Ct(pF)

Rev.O 1/4
zElectrical characteristic curves
1000 10000 Ta=125℃ 100 f=1MHｚ
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
10 1 0.1 0.01 0.001

Rev.O 3/4
SOD -923
D
−X− −Y− E
1
2
b
2X
0.08 (0.0032) X Y A
MILLIMETERS DIM MIN NOM MAX A 0.34 0.39 0.43 b 0.15 0.20 0.25 c 0.07 0.12 0.17 D 0.75 0.80 0.85 E 0.55 0.60 0.65 HE 0.95 1.00 1.05 L 0.05 0.10 0.15
Symbol VR Io IFSM Tj Tstg
Limits 30 100 500 125 -40 to +125
Unit V mA mA ℃ ℃
zElectrical characteristic (Ta=25°C) Parameter Forward vpltage Forward vpltage Reverse current Symbol VF VF IR Min. Typ. Max. 0.35 0.4 10 Unit V V µA Conditions IF=10mA IF=20mA VR=10V
SCHOTTKY BARRIER DIODE
tions
Low current rectification zFeatures
Extremelysmall surface mounting type. (SOD923) Low VF High reliability. We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
INCHES MIN NOM 0.013 0.015 0.006 0.008 0.003 0.005 0.030 0.031 0.022 0.024 0.037 0.039 0.002 0.004
MAX 0.017 0.010 0.007 0.033 0.026 0.041 0.006
c
L HE
SOLDERING FOOTPRINT*
0.90 0.40
0.30
DIMENSIONS: MILLIMETERS

Rev.O 4/4
zConstruction Silicon epitaxial planar
RB521CS-30T
1
2
SOD923
1 Cathode
2 Anode
DEVICE MARKING AND ORDERING INFORMATION
Device RB521CS-30T Marking F Shipping 8000/Tape&Reel
1cyc 8.3ms
15
Ifsm t
10
5
5
5 AVE:3.90A 0
0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectifierd forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature
Io t T VR D=t/T VR=15V Tj=125℃
D=1/2 0.1 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125
75
100
125
CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc)
0.3 0.3 VR D=t/T VR=15V Tj=125℃
AVERAGE RECTIFI FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V 0.2 DC
Io t T
0A 0V 0.2 DC D=1/2 0.1 Sin(θ＝180) 0 0 25 50
Ta=75℃ Ta=-25℃ Ta=25℃
Ta=75℃ 100 10 1 0.1 0.01 Ta=25℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
Ta=125℃
1000
10
Ta=-25℃
1 0 10 20 30 0 5 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
1000
0.1 Rth(j-a) 0.08 Rth(j-c)
0.1 0.08 DC Sin(θ＝180)
REVERSE POWER DISSIPATION:PR (W)
FORWARD POWER DISSIPATION:Pf(W)
IR DISPERSION MAP
Ct DISPERSION MAP
20
10 Ifsm
10 Ifsm 8.3ms 8.3ms 1cyc
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ta=25℃ IF=10mA n=30pcs
25 20 15 10 AVE:2.017uA 5 0
Ta=25℃ VR=10V n=30pcs
19 18 17 16 15 14 13 12 11 10 AVE:17.34pF
Ta=25℃ f=1MHz VR=0V n=10pcs
AVE:270.2mV
VF DISPERSION MAP
D=1/2
0.06 0.04 0.02 0
0.06 0.04 0.02 0 D=1/2 DC Sin(θ＝180)
100
Mounted on epoxy board IM=10mA IF=100mA
1ms
time
300us
10 0.001
0.1
10
1000
0
TIME:t(s) Rth-t CHARACTERISTICS