泰科V23990-P540全系列
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flow PIM 0
1200V / 15A
Ɣ Tyco clip-in housing
Ɣ Trench Fieldstop IGBT's for low saturation losses Ɣ Optional w/o BRC
Ɣ Industrial Drives
Ɣ Embedded Generation
Ɣ V23990-P540-A-PM Ɣ V23990-P540-C-PM
Parameter
Symbol
Value
Unit
Input Rectifier Bridge
Repetitive peak reverse voltage V RRM 1600
V T
h =80°C 30T c =80°C 40T j =25°C 200T j =25°C 200T
h =80°C 37T c =80°C
54Maximum junction temperature
T j max
150
°C
Transistor Inverter
V CE 1200V T h =80°C 16T c =80°C
20Repetitive peak collector current I cpuls tp limited by T j max 32A T h =80°C 39T c =80°C 58,6Gate-emitter peak voltage
V GE ±20
V Tj 150°C VCC=900V VGE=15V Maximum junction temperature T j max
150
°C
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
10
Types
Condition
DC current
I FSM
I FAV T j =T j max
Features
flow 0 housing
Target Applications
Schematic
W I 2
t-value
Power dissipation per Diode Collector-emitter break down voltage I C T j =T j max T j =T j max
t p =10ms
P tot I 2
t A A A2s W Maximum Ratings
Forward current per diode Surge forward current P s t SC DC collector current
Power dissipation per IGBT SC withstand time*P tot A
Parameter
Symbol
Value
Unit
Condition
Maximum Ratings
Diode Inverter
T h =80°C 16T c =80°C
20Repetitive peak forward current I FRM tp limited by T j max 31A T h =80°C 27T c =80°C 40,3Maximum junction temperature
T j max
150
°C
Transistor BRC
Collector-emitter break down voltage V CE 1200V T h
=80°C 11T c =80°C 14Repetitive peak collector current I cpuls tp limited by T j max T h =80°C 22A T h =80°C 27T c =80°C
41Gate-emitter peak voltage
V GE ±20
V
Tj 150°C VCE=900V VGE=15V Maximum junction temperature T j max 150°C
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
Diode BRC
T h =80°C 12T c =80°C 16Repetitive peak forward current I FRM tp limited by T j max T h =80°C 24A T h =80°C 23T c =80°C
35Maximum junction temperature
T j max
150
°C
Thermal properties
Storage temperature T stg -40…+125°C Operation temperature
T op
-40…+125
°C
Insulation properties
Insulation voltage V is
t=1min
4000Vdc Creepage distance min 12,7mm min 12,7
mm
T j =T j max I F DC forward current
Clearance
P tot T j =T j max
T j =T j max DC forward current
I F Power dissipation per Diode SC withstand time*t SC
W W A A 10P s
Power dissipation per IGBT DC collector current
I C T j =T j max T j =T j max
P tot W A T j =T j max
Power dissipation per Diode P tot