WAT测量项目开发以及检验方法
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WAT Item Name(以 NW bridge为例):
IbriNW
PAD
PAD
STI
NW PW NW PW NW PW NW
Item name Ibri
Method of measurement
Vh=1.1Vdd, measure Ih, Ibri=Ih
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
Vb=0, sweep Vg from 0V to Vgstop(<3Vdd), measure Ig, Bv=Vg@Ig=100pA/um2
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
4. Gate Oxide
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
Vg=1.1Vdd, sweep Vd from 0V to Vdstop(<3Vdd),measure Id, Vpt=Vd@Id=10nA/um
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
3. Junction
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
WAT Item Name(以PW gate oxide为例) :
Cgpw
Toxpw
BvCgpw
Item name
Method of measurement
Cox Tox Bv
Vg=Vdd, Vb=GND, apply a 0.03V AC signal to measure C value, Cox=C/Area
WAT 测量项目以及测试方法
TD/DTD/DD: Sutter Dai
2008/03/07
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
WAT Introduction
1. WAT是什么 2. WAT系统介绍 3. WAT测试项目及方法
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
Agilent 4284A CV Meter
➢WAT系统介绍
Manual Prober
Agilent 4156A IV Meter
Cascade Manual Prober
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
WAT 流程图
Data EDA Server
Test Key
Product information Test Program
Server
Data
Control command
Wafer
Probe card
PIN No SMU
CV Meter
DC tester 4070 Server
Auto-Prober
Vd=Vdd, Vs=Vg=0, sweep Vg from 0 to Vdd to get maximum Isub current
Vd=1.1Vdd, Vg=Vs=Vb=0, measure Id, Ioff=Id/Width
Bvd
Vg=Vs=Vb=0, sweep Vd from 0V to Vdstop(<3Vdd), measure Id, Bvd=Vd@Id=0.1uA/um
以 NMOS 为例：
Item name
Method of measurement
Ids
Vd=Vg=Vdd, Vs=Vb=0, measure Id, Ids=Id/Width
Vt0 Vt1 Isub Ioff
Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 3V, use maximum slope method,Vt0=Xintercept –1/2*Vd Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 2V,measure Id,Vt1=Vg@Id=0.1uA*Width/Length
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
Sheet resistance (RsN+/P+/NW/Poly/Metal)
Item name Rs
Method of measurement
Vh=1V, measure Ih, Rs=(Vh/Ih)/Sqr
Thanks!
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
2. Field Device
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
WAT Item Name(以Poly Nfield为例) :
WAT Item Name (以 N+/PW junction为例) :
CNj
IleakNj
BvNj
Item name
Method of measurement
Cj Ileak Bv
Vg=0V, Vb=GND, apply a 0.03V AC signal to measure C value, Cj=C/Area Vg=1.1Vdd, measure Ig, Ileak=Ig/Area
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
➢WAT是什么?
Wafer Acceptance Test（晶片允收测试）
半导体硅片在完成所有制程工艺后，针 对硅片上的各种测试结构所进行的电性测试。
通过对WAT数据的分析，我们可以发现 半导体制程工艺中的问题，帮助制程工艺进 行调整。
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
1. MOS Device
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
N Well Psub
Item name
Method of measurement
Hfe Bv
Ib=1uA, Vce=Vdd, Hfe=Ic/Ib
Base floating, Sweep Vce from 0V to Vcestop(<3Vdd), measure Ic, Bv=Vce@Ic=1uA
Relay Metric
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
➢WAT测试项目
常见的几种器件结构
1. MOS device 2. Field Device 3. Junction 4. Gate Oxide 5. Resistor 6. Bipolar Device 7. Layout Rule Check
Vg=GND, Vb=Vdd, apply a 0.03V AC signal to measure Cox value, Tox=(εo *εox *Area)/Cox
Vb=0, sweep Vg from 0V to Vgstop(<3Vdd), measure Ig, Bv=Vg@Ig=100pA/um2
Note: Rc need to subtract active & Metal resistor, RsMetal can be ignored due to metal resistor is very small.
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
7. Layout Rule Check
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
NW/N+ Poly/N+ active/Metal bridge
➢WAT系统介绍
Agilent 4070
Agilent 4070 system
TEL P8XL
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
➢WAT系统介绍
Agilent 4070 内部结构
Agilent 81110A Pulse Generator
VtNfpS (field Vt)
IleakNfpS
VptNfpS (punchthrough Vt)
Item name
Method of measurement
Vt Ileak Vpt
Vd=1.1Vdd, sweep Vg from 0V to Vgstop(<3Vdd),measure Id, Vt=Vg@Id=10nA/um Vg=Vd=1.1Vdd, measure Id, Ileak=Id/Width
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
Contact Resistance (RcN+/百度文库+/Via)
Pad
Pad
M1
N+
N+
N+
P Well
Item name Rc
Method of measurement
Vh=1V, Vl=GND, measure Ih, Rs=[(Vh/Ih)(Rsn*Wn/Ln+Rsm*Wm/Lm)*1/2*Ncon)]/Ncon
6. Bipolar Device
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
WAT Item Name(以 NPN为例):
HfeNpn
BvNpn
B Pad
E Pad
M1
C Pad
STI N+ STI P+ STI P+ STI
NOTE: If there has a dummy capacitor, Cdummy should be subtracted.(Cox=Cox-Cdummy)
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
5. Resistor
HP 4070 Server
Agilent E4411B Spectrum Analyzer
Agilent 3458A Digit Multimeter
Agilent 4284A CV Meter
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
IbriNW
PAD
PAD
STI
NW PW NW PW NW PW NW
Item name Ibri
Method of measurement
Vh=1.1Vdd, measure Ih, Ibri=Ih
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
Vb=0, sweep Vg from 0V to Vgstop(<3Vdd), measure Ig, Bv=Vg@Ig=100pA/um2
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
4. Gate Oxide
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
Vg=1.1Vdd, sweep Vd from 0V to Vdstop(<3Vdd),measure Id, Vpt=Vd@Id=10nA/um
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
3. Junction
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
WAT Item Name(以PW gate oxide为例) :
Cgpw
Toxpw
BvCgpw
Item name
Method of measurement
Cox Tox Bv
Vg=Vdd, Vb=GND, apply a 0.03V AC signal to measure C value, Cox=C/Area
WAT 测量项目以及测试方法
TD/DTD/DD: Sutter Dai
2008/03/07
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
WAT Introduction
1. WAT是什么 2. WAT系统介绍 3. WAT测试项目及方法
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
Agilent 4284A CV Meter
➢WAT系统介绍
Manual Prober
Agilent 4156A IV Meter
Cascade Manual Prober
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
WAT 流程图
Data EDA Server
Test Key
Product information Test Program
Server
Data
Control command
Wafer
Probe card
PIN No SMU
CV Meter
DC tester 4070 Server
Auto-Prober
Vd=Vdd, Vs=Vg=0, sweep Vg from 0 to Vdd to get maximum Isub current
Vd=1.1Vdd, Vg=Vs=Vb=0, measure Id, Ioff=Id/Width
Bvd
Vg=Vs=Vb=0, sweep Vd from 0V to Vdstop(<3Vdd), measure Id, Bvd=Vd@Id=0.1uA/um
以 NMOS 为例：
Item name
Method of measurement
Ids
Vd=Vg=Vdd, Vs=Vb=0, measure Id, Ids=Id/Width
Vt0 Vt1 Isub Ioff
Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 3V, use maximum slope method,Vt0=Xintercept –1/2*Vd Vd=0.1V, Vs=Vb=0, sweep Vg from 0V to 2V,measure Id,Vt1=Vg@Id=0.1uA*Width/Length
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
Sheet resistance (RsN+/P+/NW/Poly/Metal)
Item name Rs
Method of measurement
Vh=1V, measure Ih, Rs=(Vh/Ih)/Sqr
Thanks!
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
2. Field Device
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
WAT Item Name(以Poly Nfield为例) :
WAT Item Name (以 N+/PW junction为例) :
CNj
IleakNj
BvNj
Item name
Method of measurement
Cj Ileak Bv
Vg=0V, Vb=GND, apply a 0.03V AC signal to measure C value, Cj=C/Area Vg=1.1Vdd, measure Ig, Ileak=Ig/Area
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
➢WAT是什么?
Wafer Acceptance Test（晶片允收测试）
半导体硅片在完成所有制程工艺后，针 对硅片上的各种测试结构所进行的电性测试。
通过对WAT数据的分析，我们可以发现 半导体制程工艺中的问题，帮助制程工艺进 行调整。
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
1. MOS Device
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
N Well Psub
Item name
Method of measurement
Hfe Bv
Ib=1uA, Vce=Vdd, Hfe=Ic/Ib
Base floating, Sweep Vce from 0V to Vcestop(<3Vdd), measure Ic, Bv=Vce@Ic=1uA
Relay Metric
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
➢WAT测试项目
常见的几种器件结构
1. MOS device 2. Field Device 3. Junction 4. Gate Oxide 5. Resistor 6. Bipolar Device 7. Layout Rule Check
Vg=GND, Vb=Vdd, apply a 0.03V AC signal to measure Cox value, Tox=(εo *εox *Area)/Cox
Vb=0, sweep Vg from 0V to Vgstop(<3Vdd), measure Ig, Bv=Vg@Ig=100pA/um2
Note: Rc need to subtract active & Metal resistor, RsMetal can be ignored due to metal resistor is very small.
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
7. Layout Rule Check
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
NW/N+ Poly/N+ active/Metal bridge
➢WAT系统介绍
Agilent 4070
Agilent 4070 system
TEL P8XL
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
➢WAT系统介绍
Agilent 4070 内部结构
Agilent 81110A Pulse Generator
VtNfpS (field Vt)
IleakNfpS
VptNfpS (punchthrough Vt)
Item name
Method of measurement
Vt Ileak Vpt
Vd=1.1Vdd, sweep Vg from 0V to Vgstop(<3Vdd),measure Id, Vt=Vg@Id=10nA/um Vg=Vd=1.1Vdd, measure Id, Ileak=Id/Width
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
Contact Resistance (RcN+/百度文库+/Via)
Pad
Pad
M1
N+
N+
N+
P Well
Item name Rc
Method of measurement
Vh=1V, Vl=GND, measure Ih, Rs=[(Vh/Ih)(Rsn*Wn/Ln+Rsm*Wm/Lm)*1/2*Ncon)]/Ncon
6. Bipolar Device
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
WAT Item Name(以 NPN为例):
HfeNpn
BvNpn
B Pad
E Pad
M1
C Pad
STI N+ STI P+ STI P+ STI
NOTE: If there has a dummy capacitor, Cdummy should be subtracted.(Cox=Cox-Cdummy)
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation
5. Resistor
HP 4070 Server
Agilent E4411B Spectrum Analyzer
Agilent 3458A Digit Multimeter
Agilent 4284A CV Meter
上海宏力半导体制造有限公司 Grace Semiconductor Manufacturing Corporation