公司地址深圳市宝安区福永镇塘尾大道华丰科技园

Features

․Fast response time ․High photo sensitivity ․Pb free

․This product itself will remain within RoHS compliant version.

Descriptions

․PT3244 is a high speed and high sensitive NPN silicon, NPN epitaxial planar phototransistor molded in a standard package,Due to is water clear epoxy the device is sensitive to visible and near Infrared radiation.

Applications

․Infrared applied system ․Camera

․Cockroach catcher

Device Selection Guide

Package Dimensions

3,8

2,5

0,53

2. The key DIM tolerance less than +/-0.1mm

1. Unit:mm

Remark: 1 emitter 2 collector

Absolute Maximum Ratings (Ta=25Absolute Maximum Ratings (Ta=25℃)

Notes: *1:Soldering time≦5 seconds.

Electro-Optical Characteristics (Ta=25℃)

Ranking

Typical Electro-Optical Characteristics Curves

Fig.1 Collector Power Dissipation

F o r w a r d C u r r e n t (m A )

100

806040200-40

-20

20

40

60

80

100

Ambient Temperature(℃)

Wavelength λ(nm)

1300

1100900700500300

1000

0.2

0.4

0.6

0.8

1.0

R e l a t i v e S p e c t r a l S e n s i t i v i t y

Fig.2 Spectral Sensitivity Ta=25℃

vs.Ambient Temperature

vs Ambient Temperature

Ambient Temperature Ta(℃)

50

40

30

20

10

040

80

120

160

R e l a t i v e C o l l e c t o r C u r r e n t (%)

Fig.3 Relative Collector Current

Ta=25℃

Vce=5v Fig.4 Collector Current vs

F i g .4 C o l l e c t o r C u r r e n t I c (m A )

0.1

0.01

1 1.5

3

1

10

70

60

Irradiance

Irradiance(mW/cm2)

Ee=1mW/cm2

Vce=5v

Typical Electro-Optical Characteristics Curves

Fig.6 Relative Radiant Intensity vs

1010

10

10

C o l l e c t o r

D a r k C u r r e n t (A )

Fig.5 Collector Dark Current(A)vs

25

50

75

100

Angular Displacement

Ambient Temperature Ta(℃)Ambient Temperature

10

-10-9-8-7-6Vce=20v

14

C o l l e c t o r c u r r e n t I c (m A )

1

2

3

4

Collector-Emitter Voltage Voltage Vce(v)

04

8

12

Vce=20v

Packing Quantity Specification

1. 500PCS/Bag

Notes

1. Lead Forming

a) During lead formation, the leads should be bent at a point at least 3mm from the base of the

epoxy bulb.

b) Lead forming should be done before soldering.

c) Avoid stressing the the products package during leads forming. The stress to the base may

damage the the product ’s characteristics or it may break the transistors.

d) Cut the the products leadframes at room temperature. Cutting the leadframes at high

temperatures may cause failure of the products.

e) When mounting the products onto a PCB, the PCB holes must be aligned exactly with the lead

position of the products. If the products are mounted with stress at the leads, it causes deterioration of the epoxy resin and this will degrade the products.

2. Storage