8205锂电池保护芯片

DIM A B B1 C D E F F1 F2 G H J K K1
Min. 2.70 *1.90 *0.95 2.60 1.40 0.30 0 0.70 *0.25 *0.45 *0.12 *0.60 o 0
Max. 5.10 3.00 1.80 0.50 1.10 0.10 1.00 o 10
o o
o
217 C 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes
o
Peak temperature 245oC 5oC 260 C +0/-5 C
o o
Dipping time 5sec 1sec 5sec 1sec
H8205
HSMC Product Specification
Inverted
H8205
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TSOP-6 Dimension
Marking:
A B B1 B1
Spec. No. : MOS200904 Issued Date : 2009.02.27 Revised Date : 2010.07.02 Page No. : 3/4
Symbol Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=10V, ID=1A, VGS=4.5V RGEN=6 VDS=8V, VGS=0V, f=1MHz VDS=10V, ID=6A, VGS=4.5V Drain-Source Breakdown Voltage Drain-Source On-State Resistance VGS=4.5V, ID=6A Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Transconductance VDS=VGS, ID=250uA VDS=16V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=6A 0.5 7 VGS=0V, ID=250uA VGS=2.5V, ID=5.2A 18 Characteristic Test Conditions Min.
6
Pin 1: Source 1 Pin 2: Drania 1 & 2 Pin 3: Source 2 Pin 4: Gate 2 Pin 5: Drania 1 & 2 Pin 6: Gate 1
Features
RDS(on)=40m@VGS=2.5V, ID=5.2A; RDS(on)=25m@VGS=4.5V, ID=6A High Density Cell Design for Ultra Low On-Resistance High Power and Current Handing Capability Fully Characterized Avalanche Voltage and Current Ideal for Li ion Battery Pack Applications
H8205 Symbol & Pin Assignment
4 5 Q2
3 2 1 Q1
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
*1 o o
Parameter
Ratings 20 8 6 30 2 1.3 -55 to +150 62.5
Units V V A A W W C C/W
Baidu Nhomakorabea
Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient
tP TP Ramp-up TL Tsmax Temperature tL
Spec. No. : MOS200904 Issued Date : 2009.02.27 Revised Date : 2010.07.02 Page No. : 4/4
Critical Zone TL to TP
Tsmin tS Preheat
Switching Test Circuit
VDD td(on)
ton tr
Switching Waveforms
td(off)
toff tf 90%
90% RD VIN VGEN RG G S Input, VIN 10% Pulse Width 50% 50% 90% D VOUT Output, VOUT 10% 10%
Sn-Pb Eutectic Assembly <3oC/sec
Pb-Free Assembly <3oC/sec
100oC 150oC 60~120 sec
150oC 200oC 60~180 sec
<3oC/sec
<3 C/sec
o
183 C 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes
Applications
Battery Protection Load Switch Power Management
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol VDS VGS ID IDM PD Tj, Tstg RJA Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current (Pulsed)
6
C D
5
4
Pin Style: 1.Source1 2.Drain1&2 3.Source2 4.Gate2 5.Drain1&2 6.Gate1 Note: Green label is used for pb-free packing
1
2
3
E J F F2 F1 G K1 K
Material: Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
ns pF nC
Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A 1.7 1.2 A V
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
*2
*1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board
H8205
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25C, unless otherwise noted)
Ramp-down
25 t 25oC to Peak Time
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices.
Spec. No. : MOS200904 Issued Date : 2009.02.27 Revised Date : 2010.07.02 Page No. : 2/4
Typ.
Max.
Unit
20 13
40 25 1.5 1 100 -
V m V uA nA S
4.86 0.92 1.4 562 106 75 8.1 9.95 21.85 5.35
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200904 Issued Date : 2009.02.27 Revised Date : 2010.07.02 Page No. : 1/4
H8205
Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
H8205
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile
*: REF., Unit: mm
H
6-Lead TSOP-6 Plastic Surface Mounted Package HSMC Package Code: ND
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