CDCLVC1102PWR;CDCLVC1102PW;CDCLVC1103PW;CDCLVC1104PW;CDCLVC1106PW;中文规格书,Datasheet资料

1GGNDCLKIN Y1Y2VDDVDDY3Y4VDDGNDY0Y11Y5GNDY6Y7Y9VDD Y8GNDGND Y10VDDY0Y1Y2Y3YnCLKIN1G•••CDCLVC11xx SCAS895–MAY20103.3V and2.5V LVCMOS High-Performance Clock Buffer FamilyCheck for Samples:CDCLVC11xxFEATURES•Operating Temperature Range:–40°C to85°C •High-Performance1:2,1:3,1:4,1:6,1:8,1:10,•Available in8-,14-,16-,20-,24-Pin TSSOP 1:12LVCMOS Clock Buffer Family Package(all pin compatible)•Very Low Pin-to-Pin Skew<50psAPPLICATIONS•Very Low Additive Jitter<100fs•General Purpose Communication,Industrial •Supply Voltage:3.3V or2.5V and Consumer Applications•f max=250MHz for3.3Vf max=180MHz for2.5VDESCRIPTIONThe CDCLVC11xx is a modular,high-performance,low-skew,general purpose clock buffer family from Texas Instruments.The whole family is designed with a modular approach in mind.It is intended to round up TI's series of LVCMOS clock generators.There are7different fan-out variations,1:2to1:12,available.All of the devices are pin compatible to each other for easy handling.All family members share the same high performing characteristics like low additive jitter,low skew,and wide operating temperature range.The CDCLVC11xx supports an asynchronous output enable control(1G)which switches the outputs into a low state when1G is low.Also,versions with synchronized enable control for glitch free switching and three-state outputs are planned in future device options.The CDCLVC11xx operate in a2.5V and3.3V environment and are characterized for operation from–40°C to 85°C.Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.PRODUCTION DATA information is current as of publication date.Copyright©2010,Texas Instruments Incorporated Products conform to specifications per the terms of the TexasInstruments standard warranty.Production processing does notnecessarily include testing of all parameters.1G GND CLKIN Y 1Y 2VDD VDD Y 3Y 4VDDGND Y 0Y 5GND1G GND CLKIN Y 1Y 2VDD VDD Y 3Y 4VDD GND Y 0Y 5GND Y 6Y71G GND CLKIN Y1Y2VDD VDD Y3Y 4VDD GND Y 0Y5GND Y 6Y7Y 9VDD Y8GNDY 1NCVDD NC YY 1Y 2VDD Y 3Y Y 1Y 2VDDNC Y1G GND CLKIN Y1Y2VDD VDD Y3Y 4VDD GND Y 0Y11Y5GND Y 6Y7Y 9VDD Y8GND GND Y10VDDCDCLVC11xxSCAS895–MAY 2010These devices have limited built-in ESD protection.The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.PACKAGE OPTIONSPIN FUNCTIONSLVCMOS CLOCK OUTPUTSUPPLY LVCMOS CLOCK OUTPUTGROUND CLOCK INPUTENABLEVOLTAGEDEVICES CLKIN 1G Y0,Y1,…Y11V DD GND CDCLVC1102123,864CDCLVC1103123,8,564CDCLVC1104123,8,5,764CDCLVC1106123,14,11,13,6,95,8,124,7,10CDCLVC1108123,16,13,15,6,11,8,95,10,144,7,12CDCLVC1110123,20,17,19,6,15,8,13,105,9,14,184,7,11,16CDCLVC1112123,24,21,23,6,19,8,17,16,10,14,125,9,13,18,224,7,11,15,20OUTPUT LOGIC TABLEINPUTSOUTPUTSCLKIN 1G Yn X L L L H L HHH2Submit Documentation FeedbackCopyright ©2010,Texas Instruments IncorporatedProduct Folder Link(s):CDCLVC11xxCDCLVC11xx SCAS895–MAY2010ABSOLUTE MAXIMUM RATINGS(1)over operating free-air temperature range(unless otherwise noted)VALUE/UNITV DD Supply voltage range–0.5V to4.6VV IN Input voltage range(2)–0.5V to V DD+0.5VV O Output voltage range(2)–0.5V to V DD+0.5VI IN Input current±20mAI O Continuous output current±50mAT J Maximum junction temperature125°CT ST Storage temperature range–65°C to150°C(1)Stresses beyond those listed under"absolute maximum ratings"may cause permanent damage to the device.These are stress ratingsonly and functional operation of the device at these or any other conditions beyond those indicated under"recommended operating conditions"is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2)This value is limited to4.6V maximum.THERMAL INFORMATIONDCDLVC1102/03/04CDCLVC1106CDCLVC1108CDCLVC11010CDCLVC1112 THERMAL METRIC(1)PW PW PW PW PW UNITS8PINS14PINS16PINS20PINS24PINSq JA Junction-to-ambient thermal resistance(2)149.4112.6108.483.087.9°C/W q JC(top)Junction-to-case(top)thermal resistance(3)69.448.033.632.326.5(1)For more information about traditional and new thermal metrics,see the IC Package Thermal Metrics application report,SPRA953.(2)The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard,high-K board,asspecified in JESD51-7,in an environment described in JESD51-2a.(3)The junction-to-case(top)thermal resistance is obtained by simulating a cold plate test on the package top.No specificJEDEC-standard test exists,but a close description can be found in the ANSI SEMI standard G30-88.RECOMMENDED OPERATING CONDITIONSover operating free-air temperature range(unless otherwise noted)MIN NOM MAX UNIT3.3V supply 3.0 3.3 3.6V DD Supply voltage range V2.5V supply 2.3 2.5 2.7V DD=3.0V to3.6V V DD/2–600V IL Low-level input voltage mVV DD=2.3V to2.7V V DD/2–400V DD=3.0V to3.6V V DD/2+600V IH High-level input voltage mVV DD=2.3V to2.7V V DD/2+400V th Input threshold voltage V DD=2.3V to3.6V V DD/2mVt r/t f Input slew rate14V/nsV DD=3.0V to3.6V 1.8Minimum pulse width att w ns CLKIN V=2.3V to2.7V 2.75DDV DD=3.0V to3.6V DC250 LVCMOS clock Inputf CLK MHzFrequency V=2.3V to2.7V DC180DDT A Operating free-air temperature–4085°CCopyright©2010,Texas Instruments Incorporated Submit Documentation Feedback3Product Folder Link(s):CDCLVC11xxCDCLVC11xxSCAS895–DEVICE CHARACTERISTICSover recommended operating free-air temperature range(unless otherwise noted)PARAMETER CONDITION MIN TYP(1)MAX UNIT OVERALL PARAMETERS FOR ALL VERSIONS1G=V DD;CLKIN=0V or V DD;I O=0mA;V DD=3.6V610mAI DD Static device current(2)1G=V DD;CLKIN=0V or V DD;I O=0mA;V DD=2.7V36mAI PD Power down current1G=0V;CLKIN=0V or V DD;I O=0mA;V DD=3.6V or2.7V60µAV DD=3.3V;f=10MHz6pF Power dissipation capacitanceC PDper output(3)V=2.5V;f=10MHz 4.5pFDDInput leakage current at1G±8I I V I=0V or V DD,V DD=3.6V or2.7VµAInput leakage current at CLKIN±25V DD=3.3V45ΩR OUT Output impedanceV DD=2.5V60ΩV DD=3.0V to3.6V DC250MHz f OUT Output frequencyV DD=2.3V to2.7V DC180MHz OUTPUT PARAMETERS FOR V DD=3.3V±0.3VV DD=3V,I OH=–0.1mA 2.9V OH High-level output voltage V DD=3V,I OH=–8mA 2.5VV DD=3V,I OH=–12mA 2.2V DD=3V,I OL=0.1mA0.1V OL Low-level output voltage V DD=3V,I OL=8mA0.5VV DD=3V,I OL=12mA0.8t PLH,Propagation delay CLKIN to Yn0.8 2.0nst PHLt sk(o)Output skew Equal load of each output50pst r/t f Rise and fall time20%–80%(V OH-V OL)0.30.8nst DIS Output disable time1G to Yn6nst EN Output enable time1G to Yn6nsPulse skew;t sk(p)To be measured with input duty cycle of50%180ps t PLH(Yn)–t PHL(Yn)(4)t sk(pp)Part-to-part skew Under equal operating conditions for two parts0.5nst jitter Additive jitter rms12kHz…20MHz,f OUT=250MHz100fs(1)All typical values are at respective nominal V DD.For switching characteristics,outputs are terminated to50Ωto V DD/2(see Figure1).(2)For dynamic I DD over frequency see Figure8and Figure9.(3)This is the formula for the power dissipation calculation(see Figure8and the Power Consideration section).P tot=P stat+P dyn+P Cload[W]P stat=V DD×I DD[W]P dyn=C PD×V DD2׃[W]P Cload=C load×V DD2׃×n[W]n=Number of switching output pins(4)t sk(p)depends on output rise-and fall-time(t r/t f).The output duty-cycle can be calculated:odc=(t w(OUT)±t sk(p))/t period;t w(OUT)ispulse-width of output waveform and tperiod is1/f OUT.4Submit Documentation Feedback Copyright©2010,Texas Instruments IncorporatedProduct Folder Link(s):CDCLVC11xxCDCLVC11xx SCAS895–MAY2010DEVICE CHARACTERISTICS(continued)over recommended operating free-air temperature range(unless otherwise noted)PARAMETER CONDITION MIN TYP(1)MAX UNIT OUTPUT PARAMETERS FOR V DD=2.5V±0.2VV DD=2.3V,I OH=–0.1mA 2.2V OH High-level output voltage VV DD=2.3V,I OH=–8mA 1.7V DD=2.3V,I OL=0.1mA0.1V OL Low-level output voltage VV DD=2.3V,I OL=8mA0.5t PLH,Propagation delay CLKIN to Yn 1.0 2.6nst PHLt sk(o)Output skew Equal load of each output50pst r/t f Rise and fall time20%–80%reference point0.3 1.2nst DIS Output disable time1G to Yn10nst EN Output enable time1G to Yn10nsPulse skew;t sk(p)To be measured with input duty cycle of50%220ps t PLH(Yn)–t PHL(Yn)(5)t sk(pp)Part-to-part skew Under equal operating conditions for two parts 1.2nst jitter Additive jitter rms12kHz…20MHz,f OUT=180MHz350fs (5)t sk(p)depends on output rise-and fall-time(t r/t f).The output duty-cycle can be calculated:odc=(t w(OUT)±t sk(p))/t period;t w(OUT)ispulse-width of output waveform and tperiod is1/f OUT.Copyright©2010,Texas Instruments Incorporated Submit Documentation Feedback5Product Folder Link(s):CDCLVC11xxR=50Wfrom Measurement EquipmentV /2DDV = 3.3 V or 2.5 V1GYnY n+1Y nCDCLVC11xxSCAS895–MAY 2010PARAMETERS MEASUREMENT INFORMATIONFigure 1.Test Load CircuitFigure 2.Application Load With 50ΩLine TerminationFigure 3.Application Load With Series Line TerminationFigure 4.t DIS and t EN for Disable Low Figure 5.Output Skew t sk(o)6Submit Documentation FeedbackCopyright ©2010,Texas Instruments IncorporatedProduct Folder Link(s):CDCLVC11xxY nOL CLKINOLVY nCLKINNote:sk (p)PLH PHL CDCLVC11xxSCAS895–MAY 2010PARAMETERS MEASUREMENT INFORMATION (continued)Figure 6.Pulse Skew t sk(p)and Propagation DelayFigure 7.Rise/Fall Times t r /t ft PLH /t PHLTYPICAL CHARACTERISTICSPower ConsiderationThe following power consideration refers to the device-consumed power consumption only.The device power consumption is the sum of static power and dynamic power.The dynamic power usage consists of two components:1.Power used by the device as it switches states.2.Power required to charge any output load.The output load can be capacitive only or capacitive and resistive.The following formula and the power graphs in Figure 8and Figure 9can be used to obtain the power consumption of the device:P dev =P stat +n (P dyn +P Cload )P stat =V DD x I DDP dyn +P Cload =see Figure 8and Figure 9where:V DD =Supply voltage (3.3V or 2.5V)I DD =Static device current (typ 6mA for V DD =3.3V;typ 3mA for V DD =2.5V)n =Number of switching output pinsExample for Device Power Consumption for CDCLVC1104:4outputs are switching,f =120MHz,V DD =3.3V and C load =2pF per output:P dev =P stat +n (P dyn +P Cload )=19.8mW +40mW =59.8mW P stat =V DD x I DD =6mA x 3.3V =19.8mW n (P dyn +P Cload )=4x 10mW =40mWNOTEFor dimensioning the power supply,the total power consumption needs to be considered.The total power consumption is the sum of the device power consumption and the power consumption of the load.Copyright ©2010,Texas Instruments Incorporated Submit Documentation Feedback7Product Folder Link(s):CDCLVC11xx051015f - Clock Frequency - MHzD e v i c e P o w e r C o n s u m p t i o n - mWf - Clock Frequency - MHzD e v i c e P o w e r C o n s u m p t i o n - m W0123f - Clock Frequency - MHzI - D y n a m i c S u p p l y C u r r e n t - m Ad yn 012345f - Clock Frequency - MHzI - D y n a m i c S u p p l y C u r r e n t - m Ad y n CDCLVC11xxSCAS895–MAY 2010TYPICAL CHARACTERISTICS (continued)Figure 8.Device Power Consumption vs Clock FrequencyFigure 9.Device Power Consumption vs Clock Frequency(Load 50Ωinto V DD /2.2pF,8pF;Per Output)(Load 50Ωinto V DD /2.2pF,8pF;Per Output)Figure 10.Dynamic Supply Current vs Clock FrequencyFigure 11.Dynamic Supply Current vs Clock Frequency(C PD =6pF,No Load;Per Output)(C PD =4.5pF,No Load;Per Output)8Submit Documentation FeedbackCopyright ©2010,Texas Instruments IncorporatedProduct Folder Link(s):CDCLVC11xxPACKAG PACKAGING INFORMATIONOrderable Device Status (1)Package Type PackageDrawing Pins Package Qty Eco Plan (2)Lead/Ball FinishMSL PeaCDCLVC1102PW ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1102PWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1103PW ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1103PWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1104PW ACTIVE TSSOP PW8150Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1104PWR ACTIVE TSSOP PW82000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1106PW ACTIVE TSSOP PW1490Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1106PWR ACTIVE TSSOP PW142000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1108PW ACTIVE TSSOP PW1690Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1108PWR ACTIVE TSSOP PW162000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1110PW ACTIVE TSSOP PW2070Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1110PWR ACTIVE TSSOP PW202000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1112PW ACTIVE TSSOP PW2460Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260CCDCLVC1112PWR ACTIVE TSSOP PW242000Green (RoHS& no Sb/Br)CU NIPDAU Level-1-260C(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.//PACKAG Array (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.tinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for alllead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable foPb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package,the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardin homogeneous material)(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TIprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate infcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical an TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for releasIn no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Cu分销商库存信息:TICDCLVC1102PWR CDCLVC1102PW CDCLVC1103PW CDCLVC1104PW CDCLVC1106PW CDCLVC1108PW CDCLVC1110PW。