M63827DP中文资料

SWITCHING CHARACTERISTICS
Symbol ton toff Parameter Turn-on time Turn-off time
(Unless otherwise noted, Ta = 25°C)
Test conditions CL = 15pF (note 1)
min — —
(Unless otherwise noted, Ta = –40 ~ +85°C)
RECOMMENDED OPERATING CONDITIONS
Symbol VO Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) “H” input voltage “L” input voltage Parameter
元器件交易网
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63827WP/DP
Taiwan A’ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
0 0 3.85 3.4 0
mA 200 25 0.6 V V
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE (sat) II VF IR h FE Parameter
(Unless otherwise noted, Ta = 25 °C)
Test conditions ICEO = 100µA
Limits typ 20 400
max — —
Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT Measured device OPEN PG 50Ω CL OUTPUT VO
TIMING DIAGRAM
50% RL INPUT
50%
OUTPUT 50% 50%
ton (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω VI = 3.85V (2) Input-output conditions : RL = 25Ω, VO = 10V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
e r t y u
200
•The collector current values represent the current per circuit. •Repeated frequency ≥ 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Ta = 85°C
INPUT
IN1→ 1 IN2→ 2 IN3→ 3 IN4→ 4 IN5→ 5 IN6→ 6 IN7→ 7 GND 8 16 →O1 15 →O2 14 →O3 13 →O4 OUTPUT 12 →O5 11 →O6 10 →O7 9 COM COMMON
Limits min 50 — — — — — — 1000 typ — 1.2 1.0 0.9 0.9 1.4 — 3000 max — 1.6 1.3 1.1 1.4 2.0 100 —
Unit V V mA V µA —
Collector-emitter breakdown voltage
II = 500µA, IC = 350mA Collector-emitter saturation voltage II = 350µA, IC = 200mA Input current Clamping diode forward voltage Clamping diode reverse current DC amplification factor II = 250µA, IC = 100mA VI = 3.85V IF = 350mA VR = 50V VCE = 2V, IC = 350mA
1.0
M63827DP 0.764
200
0.5
0.520
100
Ta = 25°C
Ta = –40°C
0
0
25
50
75 85
100
0
0
0.4
0.8
1.2
1.6
Ambient temperature Ta (°C) Duty-Cycle-Collector Characteristics (M63827WP) 500
50 1.47(WP)/1.00(DP) –40 ~ +85 –55 ~ +125
元器件交易网
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63827WP/DP
Taiwan A’ssy product
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
16P4X-A(WP) Package type 16P2X-B(DP)
CIRCUIT DIAGRAM
COM OUTPUT
APPLICATION Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply. PIN CONFIGURATION
The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : Ω
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current Input voltage

FEATURES Two package configurations (WP/DP) High breakdown voltage (BVCEO ≥ 50V) High-current driving (Ic(max) = 500mA) With clamping diodes Driving available with TTL, PMOS IC output Wide operating temperature range (Ta = –40 to +85° C)
Feb. 2003
Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25°C, when mounted on board
INPUT
2.7K
7.2K
3K
GND
The seven circuits share the COM and GND.
FUNCTION The M63827WP and M63827DP each have seven circuits consisting of NPN Darlington transistors. These ICs have resistance of 2.7kΩ between input transistor bases and input pins. A spike-killer clamping diode is provided between each output pin (collector) and COM pin (pin 9). The output transistor emitters are all connected to the GND pin (pin 8). The collector current is 500mA maximum. Collector-emitter supply voltage is 50V maximum.
(Unless otherwise noted, Ta = –40 ~ +85 °C)
Conditions Output, H Current per circuit output, L
Ratings –0.5 ~ +50 500 –0.5 ~ +30 500
Unit V mA V mA V W °C °C
Limits min 0 typ — — — — — — max 50 400
Unit V