BC847贴片三极管规格书
FOSAN富信电子 三极管 BC846 BC847 BC848-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BC846/BC847/BC848 SOT-23Bipolar Transistor双极型三极管▉Features特点NPN General Purpose通用▉Absolute Maximum Ratings最大额定值Characteristic 特性参数Symbol符号BC846A/B/CBC847A/B/CBC848A/B/CUnit单位Collector-Base Voltage集电极基极电压V CBO805030VCollector-Emitter Voltage 集电极发射极电压V CEO654530VEmitter-Base Voltage发射极基极电压V EBO665V Collector Current集电极电流I C100mA Power dissipation耗散功率P C(T a=25℃)200mWThermal ResistanceJunction-Ambient热阻RΘJA625℃/W Junction and Storage Temperature结温和储藏温度T J,T stg-55to+150℃■Device Marking产品打标H FE110-220(A)200-450(B)420-800(C)Mark BC8461A1B1C BC8471E1F1G BC8481J1K1LANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BC846/BC847/BC848■ElectricalCharacteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Type 典型值Max 最大值Unit 单位Collector-Base Breakdown Voltage集电极基极击穿电压(I C =10uA ，I E =0)BC846A/B/C BC847A/B/C BC848A/B/C BV CBO805030——VCollector-Emitter Breakdown Voltage集电极发射极击穿电压(I C =10mA ，I B =0)BC846A/B/C BC847A/B/C BC848A/B/CBV CEO 654530——VEmitter-Base Breakdown V oltage 发射极基极击穿电压(I E =10uA ，I C =0)BV EBO 5——VCollector-Base Leakage Current集电极基极漏电流BC846A/B/C(V CB =70V ,I E =0)BC847A/B/C(V CB =50V ,I E =0)BC848A/B/C(V CB =30V ,I E =0)I CBO ——100nAEmitter-Base Leakage Current 发射极基极漏电流(V EB =5V ，I C =0)I EBO ——100nADC Current Gain 直流电流增益(V CE =5V,I C =2mA)BC846A/BC847A/BC848A BC846B/BC847B/BC848B BC846C/BC847C/BC848CH FE110200420180290520220450800Collector-Emitter Saturation Voltage 集电极发射极饱和压降(I C =100mA ，I B =5mA)V CE(sat)——0.5VBase-Emitter Saturation V oltage 基极发射极饱和压降(I C =100mA ，I B =5mA)V BE(sat)—— 1.1V Transition Frequency 特征频率(V CE =5V ，I C =10mA)f T100——MH ZOutput Capacitance 输出电容(V CB =10V ，I E =0,f=1MH Z )C ob— 4.5—pFANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BC846/BC847/BC848■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BC846/BC847/BC848■Dimension外形封装尺寸Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.1500.0350.045A10.0000.1000.0000.004A20.900 1.0500.0350.041b 0.3000.5000.0120.020c 0.0800.1500.0030.006D 2.800 3.0000.1100.118E 1.200 1.4000.0500.055E1 2.2502.5500.0890.100e 0.950TYP0.037TYPe1 1.8002.0000.0710.079L 0.550REF0.022REFL10.3000.5000.0120.020θ0o8o 0o8o。
贴片B系列三极管参数
NQ I NQ N N P I N N N N N N P I E C P I N I N N N N P I N N N N P P I N N N N I P N N N N P I DL
SOT143 SOD323 SOT343 SOT23 SOT23 SOT89 SOD323 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT89 SOD323 SOT23 SOT23 SOT89 SOD323 SOT23 SOD323 SOT23 SOT23 SOT23 SOT23 SOT89 SOD323 SOT23 SOT23 SOT23 SOT23 SOT223 SOT89 SOD323 SOT23 SOT23 SOT23 SOT23 SOD323 SOT223 SOT23 SOT23 SOT23 SOT23 SOT89 SOD323 SOT363
Mot Sie Phi Sie Sie Mot Phi Phi Sie Sie Phi Sie Sie Phi Sie Phi Phi Phi Phi Phi Phi Roh Roh Roh Mot Phi Phi
P P I GQ HQ N N N P GQ I HQ N I GQ N N I I N N N N N N I N
npn amp 80V 150mA npn hfe 160 12V 0.3W zener MMIC amp 9dB @1GHz MMIC amp 13 dB @1.8GHz 100v pnp comp BSS64 100v pnp comp BSS64 100v pnp comp BSS64 npn hfe 160 MMIC amp 11dB @1GHz 13V 0.3W zener MMIC amp 18 dB @1.8GHz low noise BCW61 15V 0.3W zener MMIC amp 16dB @1GHz BCX78, BCY78-vii BCY78-viii 16V 0.3W zener 18V 0.3W zener in SOD323 PNP 45V 0.1A hfe 160-260 BCY78-ix npn 50V 150mA min hfe 180 2SC2412K above 2SC2412K above gp pnp 45V 20V 0.3W zener pnp45V 0.1A hfe 210-340
BC847CT-TP;BC847AT-TP;BC847BT-TP;中文规格书,Datasheet资料
BC847AT, BT, CTNPNSurface Mount Small Signal Transistor150mWFeaturesx Epitaxial Die Constructionx Complementary PNP Type Available (BC857AT,BT,CT)x Ultra-Small Surface Mount Packageomp onents20736 Marilla Street Chatsworth! "# $ % ! "#Micro Commercial Components • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)• Epoxy meets UL 94 V-0 flammability ratingElectrical Characteristics @ 25к Unless Otherwise SpecifiedSymbol Parameter Min Ty p Max Units Test ConditionOFF CHARACTERISTICSh FE DC Current Gain (Note 2)Current Gain A B C 110 200 420---290520222450800--- V CE =5.0V, I C =2.0mAV CE(SAT)Collector-Emitter Saturation Voltage (Note 2)--- --- 250600mVI C =10mA, I B =0.5mAI C =100mA, I B =5.0mA V BE(SAT)Base-Emitter Saturation Voltage(Note 2) ---700900--- mVV BE(ON) Base-Emitter Voltage (Note 2) 580 ---660--- 700770mVV CE =5.0V, I C =2.0mAV CE =5.0V, I C =10mAI CBO I CBO Collector-Cutoff Current (Note 2) --------- --- 155.0nAµA V CB =30V, I E =0V CB =30V, T j =125кf TGain Bandwidth Product100 --- --- MHzV CE =5.0V, I C =10mA,f=100MHzC CBO Collector-Base Capacitance--- --- 4.5 pF V CB =10V, f=1.0MHzNFNoise Figure BC847BTBC847CT--- --- 104.0dBV CE =5V,R S =2.0Kohm,f=1.0MHz,BW=200HZNote: 2. Short duration pulse test used to minimize self-heating effect.BC847AT, BT, CTMicro Commercial ComponentsI C =10mA, I B =0.5mA I C =100mA, I B =5.0mAMicro Commercial ComponentsOrdering Information :Device PackingPart Number-T P Tape&Reel;3Kpcs/Reel***IMPORTANT NOTICE***Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT***MCC's products are not authorized for use as critical components in life support devices or systems without the express writtenapproval of Micro Commercial Components Corporation.***CUSTOMER AWARENESS***Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.分销商库存信息:MICRO-COMMERICAL-COBC847CT-TP BC847AT-TP BC847BT-TP。
BC847三极管
103
0 10−2
10−1
1
10
102 103 I C (mA)
BC847B; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
BC847B; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
VALUE 500
UNIT K/W
2002 Feb 04
3
Philips Semiconductors
Product specification
NPN general purpose transistors
CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain BC846A; BC847A BC846B; BC847B; BC848B BC847C DC current gain BC846 BC847 BC846A; BC847A BC846B; BC847B; BC848B BC847C VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBE Cc fT F base-emitter voltage collector capacitance transition frequency noise figure IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = 2 mA; VCE = 5 V VEB = 5 V; IC = 0 IC = 10 µA; VCE = 5 V
BC847BS,115;BC847BS,135;中文规格书,Datasheet资料
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
BC847BS_3
Product data sheet
/
Rev. 03 — 18 February 2009
© NXP B.V. 2009. All rights reserved.
5 of 12
PNP/PNP complement: BC857BS.
1.2 Features
I Low collector capacitance I Low collector-emitter saturation voltage I Closely matched current gain I Reduces number of components and board space I No mutual interference between the transistors
103
Zth(j-a) (K/W)
102
δ=1 0.50 0.20
0.75 0.33
0.10
0.05 0.02
10 0.01
0
006aab421
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Fig 3.
FR4 PCB, mounting pad for collector 1 cm2
current
-
-
15
nA
-
-
5
µA
-
-
100 nA
hFE
DC current gain
VCE = 5 V; IC = 2 mA
BC847BS;中文规格书,Datasheet资料
©2007 Fairchild Semiconductor Corporation BC847BS Rev. ABC847BSJune 2007BC847BSNPN Multi-chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collector currents to 200 mA.Sourced from Process 07.Absolute Maximum Ratings * T a= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES :1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics * T a= 25°C unless otherwise noted*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.SymbolParameterValueUnitsV CBO Collector-Base Voltage 50V V CES Collector-Base Voltage 50V V CEO Collector-Emitter Voltage 45V V EBO Emitter-Base Voltage 6.0V I C Collector Current (DC)100mA T J, T STGJunction Temperature and Storage Temperature-55 ~ +150°CSymbolCharacteristicMaxUnitsP D Total Device Dissipation Derate above 25℃2101.6mW mW/℃R θJAThermal Resistance, Junction to Ambient625℃/WC1B2E1NOTE: The pinouts are symmetrical; pin 1 and pin4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.Pin #1 B1C2E2 SC70-6Mark: .1FDual NPN Signal TransisterBC847BS Rev. ABC847BSElectrical Characteristics * T a= 25°C unless otherwise notedOff CharacteristicsOn Characteristics* Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.SymbolParameter Test Condition MIN MAX UnitsV (BR)CBO Collector-Emitter Breakdown Voltage I C = 10 μA, I E = 050V V (BR)CES Collector-Base Breakdown Voltage I C = 10 μA, I E = 050V V (BR)CEO Collector-Base Breakdown Voltage I C = 10 mA, I B = 045V V (BR)EBO Emitter-Base Breakdown Voltage I E = 10 μA, I C = 06.0V I CBOCollector-Cutoff CurrentV CB = 30 V, I E = 0V CB = 30 V, I E = 0, T A = 150°C155.0nA μAh FE DC Current GainI C = 2.0 mA, V CE = 5.0 V200450V CE(sat )Collector-Emitter Saturation Voltage *I C = 10 mA, I B = 0.5 mAI C = 100 mA, I B = 5.0 mA 0.250.65V V V BE(on )Emitter-Base Breakdown Voltage *I C = 2.0 mA, V CE = 5.0 V I C = 10 mA, V CE = 5.0 V0.580.70.77V VtmFAIRCHILD SEMICONDUCTOR TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.BC847BSDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT Quiet Series™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™μSerDes™ScalarPump™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyBoost™TinyBuck™TinyPWM™TinyPower™TinyLogic ®TINYOPTO™TruTranslation™UHC ®UniFET™VCX™Wire™ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT ®FAST ®FASTr™FPS™FRFET™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Rev. I233BC847BS Rev. A分销商库存信息: FAIRCHILDBC847BS。
BC847BVC-7;中文规格书,Datasheet资料
NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTORFeatures• Epitaxial Die Construction• Ultra-Small Surface Mount Package• Lead Free By Design/RoHS Compliant (Note 3) • "Green" Device (Note 4)•Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT-563 • Case Material: Molded Plastic, "Green" Molding Compound. ULFlammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminal Connections: See Diagram • Terminals: Finish - Matte Tin annealed over Copper leadframe.Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 2 • Ordering Information: See Page 2 • Weight: 0.002 grams (approximate)Maximum Ratings @T A = 25°C unless otherwise specifiedCharacteristicSymbol Value Unit Collector-Base Voltage V CBO 50 V Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V EBO 6.0 V Collector Current I C100mAThermal CharacteristicsCharacteristicSymbol Value Unit Power Dissipation (Note 2)P D 150 mW Thermal Resistance, Junction to Ambient (Note 2) R θJA 833 °C/W Operating and Storage Temperature Range T J , T STG-55 to +150°CElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristicSymbol Min Typ Max UnitTest ConditionCollector-Base Breakdown Voltage (Note 5) V (BR)CBO 50 — — V I C = 10μA, I B = 0 Collector-Emitter Breakdown Voltage (Note 5) V (BR)CEO 45 — — V I C = 10mA, I B = 0 Emitter-Base Breakdown Voltage (Note 5) V (BR)EBO 6 — — V I E = 1μA, I C = 0DC Current Gain (Note 5) h FE 200 290 450 — V CE = 5.0V, I C = 2.0mA Collector-Emitter Saturation Voltage (Note 5) V CE(SAT) — — 100 300 mV I C = 10mA, I B = 0.5mA I C = 100mA, I B = 5.0mA Base-Emitter Saturation Voltage (Note 5) V BE(SAT) — 700 900 — mV I C = 10mA, I B = 0.5mA I C = 100mA, I B = 5.0mA Base-Emitter Voltage (Note 5) V BE 580 — 660 — 700 770 mV V CE = 5.0V, I C = 2.0mA V CE = 5.0V, I C = 10mA Collector-Emitter Cutoff Current (Note 5) I CBO I CBO — — 15 5.0 nA µA V CB = 30VV CB = 30V, T A = 150°C Gain Bandwidth Product f T 100 — — MHz V CE = 5.0V, I C = 10mA, f = 100MHzOutput Capacitance C OBO — — 4.5 pF V CB = 10V, f = 1.0MHz Noise FigureNF——10dBV CE = 5V, R S = 2.0k Ω, f = 1.0kHz, BW = 200HzNotes:1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at /datasheets/ap02001.pdf.3. No purposefully added lead.4. Diodes Inc's "Green" policy can be found on our website at /products/lead_free/index.php5. Short duration pulse test used to minimize self-heating effect.Top View Bottom ViewDevice SchematicC 1B 2E 2C 2E 1B 1Please click here to visit our online spice models database.050100150250200150500T , AMBIENT TEMPERATURE (C)Fig. 1 Power Dissipation vs. Ambient Temperature (Note 2)A °P , P O W E R D I S S I P A T I O N (m W )Dh D C C U R R E N T G A I NF E ,I , COLLECTOR CURRENT (mA)Fig. 2 Typical DC Current Gain vs. Collector Current CV , C O L L E C T O R -E M I T T E RS A T U R A T I O N V O L T A G E (V )C E (S A T )I , COLLECTOR CURRENT (mA)Fig. 3 Typical Collector Emitter Saturation Voltagevs. Collector CurrentCf , G A I N -B A N D W I D T H P R O D U C T (M H z )T I , COLLECTOR CURRENT (mA)Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current COrdering Information (Note 6)Part Number Case Packaging BC847BVC-7SOT-563 3000/Tape & ReelNotes:6. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationDate Code KeyYear 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 Code S T U V W X Y Z A B CMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D4VK = Product Type Marking Code YM = Date Code MarkingY = Year (ex: S = 2005)M = Month (ex: 9 = September) 4VK YMPackage Outline DimensionsSuggested Pad LayoutSOT-563Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.100.30 0.20 M 0.10 0.18 0.11 All Dimensions in mmDimensions Value (in mm)Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5XZYC1C2C2GIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2009, Diodes Incorporated分销商库存信息: DIODESBC847BVC-7。
BC847BV,315;BC847BV,115;中文规格书,Datasheet资料
Product data sheet2001 Sep 10NPN general purpose double transistorBC847BVFEATURES•300 mW total power dissipation•Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package •Excellent coplanarity due to straight leads •Low collector capacitance•Improved thermal behaviour due to flat leads•Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors •Reduces required board space •Reduces pick and place costs.APPLICATIONS•General purpose switching and amplification.DESCRIPTIONNPN double transistor in a SOT666 plastic package. PNP complement: BC857BV.MARKINGPINNINGTYPE NUMBER MARKING CODEBC847BV1FPIN DESCRIPTION 1, 4emitter TR1; TR22, 5base TR1; TR26, 3collectorTR1; TR2NPN general purpose double transistor BC847BVLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT Per transistorV CBO collector-base voltage open emitter−50VV CEO collector-emitter voltage open base−45VV EBO emitter-base voltage open collector−5VI C collector current (DC)−100mAI CM peak collector current−200mAI BM peak base current−200mAP tot total power dissipation T amb≤ 25 °C; note 1−200mWT stg storage temperature −65+150°CT j junction temperature−150°CT amb operating ambient temperature −65+150°CPer deviceP tot total power dissipation T amb≤ 25 °C; note 1−300mW Note1.Transistor mounted on an FR4 printed-circuit board.THERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNITR th j-a thermal resistance from junction to ambient notes 1 and 2416K/W Notes1.Transistor mounted on an FR4 printed-circuit board.2.The only recommended soldering method is reflow soldering.NPN general purpose double transistorBC847BVCHARACTERISTICST amb = 25 °C; unless otherwise specified.Note1.Pulse test: t p ≤ 300 μs; δ ≤ 0.02.SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNITPer transistor I CBO collector-base cut-off current I E = 0; V CB = 30 V−−15nA I E = 0; V CB = 30 V; T j = 150 °C −−5μA I EBO emitter-base cut-off current I C = 0; V EB = 5 V −−100nAh FE DC current gain I C = 2 mA; V CE = 5 V 200−450V BE base-emitter voltage I C = 2 mA; V CE = 5 V 580655700mV V CEsat collector-emitter saturation voltageI C = 10 mA; I B = 0.5 mA −−100mV I C = 100 mA; I B = 5 mA; note 1−−300mV V BEsat base-emitter saturation voltage I C = 10 mA; I B = 0.5 mA−755−mV C c collector capacitance I E = I e = 0; V CB = 10 V; f = 1 MHz−− 1.5pF C e emitter capacitance I C = i c = 0; V EB = 500 mV;f = 1 MHz −11−pF f T transition frequencyI C = 10 mA; V CE = 5 V; f = 100 MHz 100−−MHzNPN general purpose double transistor BC847BV Graphical information BC847BVNPN general purpose double transistor BC847BV PACKAGE OUTLINENPN general purpose double transistorBC847BVDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DISCLAIMERSGeneral ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties,expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, including those pertaining to warranty, intellectual property rightsinfringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.NXP SemiconductorsCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@© NXP B.V. 2009All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Sep 10Document order number: 9397 750 08589分销商库存信息:NXPBC847BV,315BC847BV,115。
BC847BS-TP;中文规格书,Datasheet资料
BC847BSDual NPN Small Signal Transistor300mWFeaturesx Ideally Suited for Automatic Insertion x Ultra-Small Surface Mount Packagex For Switching and AF Amplifier Applications omp onents 20736 Marilla Street Chatsworth! "# $ % ! "#Revision: A 2011/01/01Micro Commercial ComponentsTMwww.mccsemi .com1 of 5• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)• Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1Electrical Characteristics @ 25к Unless Otherwise SpecifiedSymbol Parameter Min Typ Max Units Test ConditionOFF CHARACTERISTICSh FE DC Current Gain200---450---VCE =5.0V, I C =2.0mA V CE(SAT)Collector-Emitter Saturation Voltage ---------250650mV I C =10mA, I B =0.5mA I C =100mA, I B =5.0mA V BE(ON)Base-Emitter Voltage580665700mV V CE =5.0V, I C =2.0mA I CBO Collector-Cutoff Current ------15nA V CB =30V, I E =0f T Gain Bandwidth Product ---200---MHz V CE =5.0V, I C =10mA,f=100MHzC OBCollector-output Capacitance--- 2 ---pFV CB =10V, f=1.0MHzRevision: A 2011/01/01BC847BSMicro Commercial ComponentsTMwww.mccsemi .com2 of 5BC847BSRevision: A 2011/01/01Micro Commercial ComponentsTMCollector-Emitter Saturation Voltage vs Collector Current0.11101000.050.10.150.20.250.3I - COLLECTOR CURRENT (mA)V - C O L L E C T O R -E M I T T E R V O L T A G E (V )CC E S A TTypical Pulsed Current Gainvs Collector Current0.010.030.10.313103010020040060080010001200I - COLLECTOR CURRENT (mA)h - T Y P I C A L P U L S E D C U R R E N T G A I NCFE Input and Output Capacitancevs Reverse Bias Voltage04812162012345REVERSE BIAS VOL TAGE (V)C A P A C I T A N C E (p F)Base-Emitter SaturationVoltage vs Collector Current 0.11101000.20.40.60.81I - COLLECTOR CURRENT (mA)V - C O L L E C T O R -E M I T T E R V O L T A G E (V )CB E S AT Base-Emitter ON Voltage vsCollector Current0.1110400.20.40.60.81I - COLLECTOR CURRENT (mA)V - B A S E -E M I T T E R O N V O L T A G E (V )CB E ONCollector-Cutoff Currentvs Ambient Temperature2550751001251500.1110T - AMBIENT TEMPERATURE ( C)I - C O L L E C T O R C U R R E N T (n A)AC B O°www.mccsemi .com3 of 5Revision: A 2011/01/01Micro Commercial Componentswww.mccsemi .com5 of 53Ordering Information :***IMPORTANT NOTICE***Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT***MCC's products are not authorized for use as critical components in life support devices or systems without the express writtenapproval of Micro Commercial Components Corporation.***CUSTOMER AWARENESS***Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below . Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.DevicePackingPart Number-T PTape&Reel;3Kpcs/Reel分销商库存信息: MICRO-COMMERICAL-CO BC847BS-TP。
1F帖片三极管BC847BT
BC847ATT1, BC847BTT1, BC847CTT1General Purpose TransistorsNPN SiliconThese transistors are designed for general purpose amplifier applications. They are housed in the SC−75/SOT−416 package which is designed for low power surface mount applications.Features•Pb−Free Packages are Available*MAXIMUM RATINGS (T= 25°C)Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.THERMAL CHARACTERISTICS1.FR−4 @ min pad.2.FR−4 @ 1.0 × 1.0 in pad.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.ORDERING INFORMATIONELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)ON CHARACTERISTICSSMALL−SIGNAL CHARACTERISTICS2.00.2Figure 3. Collector Saturation Region I B , BASE CURRENT (mA)Figure 4. Base−Emitter Temperature CoefficientI C , COLLECTOR CURRENT (mA)1.21.62.00.40.8h F E , N O R M A L I Z E D D C C U R R E N T G A I NV C E , C O L L E C T O R −E M I T T E R V O L T A G E (V )1.51.00.80.60.40.3BC847Figure 5. Normalized Thermal Response0.0010.010.11.0r (t ), N O R M A L I Z E D T R A N S I E N T T H E R M A L R E S I S T A N C Et, TIME (s)Figure 6. Capacitances VR , REVERSE VOLTAGE (VOLTS)100.40.6 1.010201.02.06.0407.05.03.02.0C , C A P A C I T A N C E (p F )0.8 4.08.0Figure 7. Current−Gain − Bandwidth ProductI C , COLLECTOR CURRENT (mAdc)80100200300400602040300.71.010202.050307.05.03.00.5f , C U R R E N T −G A I N − B A N D W I D T H P R O D U C T (M H z )TORDERING INFORMATION†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifi-cations Brochure, BRD8011/D.PACKAGE DIMENSIONSSC−75/SOT−416CASE 463−01ISSUE CON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
贴片三极管参数
贴片三极管型号查询直插封装的型号贴片的型号9011 1T 9012 2T 9013 J3 9014 J6 9015 M6 9016 Y6 9018 J8S8050 J3YS8550 2TY 8050 Y1 8550 Y2 2SA1015 BA2SC1815 HF2SC945 CR MMBT3904 1AM MMBT3906 2A MMBT2222 1P MMBT5401 2L MMBT5551 G1 MMBTA42 1D MMBTA92 2DBC807-16 5ABC807-25 5BBC807-40 5CBC817-16 6ABC817-25 6BBC817-40 6CBC846A 1A BC846B 1B BC847A 1E BC847B 1F BC847C 1G BC848A 1JBC848B 1K BC848C 1L BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC858A 3JBC858B 3K BC858C 3L2SA733 CSUN2111 V1UN2112 V2UN2113 V3UN2211 V4UN2212 V5UN2213 V62SC3356 R232SC3838 AD2N7002 702我也补充点：用贴片三极管代码查找贴片三极管资料及其封装(24)Z3 SOT23 BZX84-C5V6 C 0.3W zener 5.6VZ4 SOD323 PDZ3.6B I 3.6V 0.4W zenerZ4 SOT23 BZX84-C6V2 zener.Z4 SOT23 BZX84-C6V2 C 0.3W zener 6.2VZ5 SOD323 PDZ3.9B I 3.9V 0.4W zenerZ5 SOT23 BZX84-C6V8 zener.Z5 SOT23 BZX84-C6V8 C 0.3W zener 6.8VZ6 SOD323 PDZ4.3B I 4.3V 0.4W zenerZ6 SOT23 BZX84-C7V5 zener.Z6 SOT23 BZX84-C7V5 C 0.3W zener 7.5VZ7 SOD323 PDZ4.7B I 4.7V 0.4W zenerZ7 SOT23 BZX84-C8V2 zener.Z7 SOT23 BZX84-C8V2 C 0.3W zener 8.2VZ8 SOD323 PDZ5.1B I 5.1V 0.4W zenerZ8 SOT23 BZX84-C9V1 zener.Z8 SOT23 BZX84-C9V1 C 0.3W zener 9.1VZ8 SOT23 SST308 JFETZ9 SOD323 PDZ5.6B I 5.6V 0.4W zenerZ9 SOT23 BZX84-C10 zener.Z9 SOT23 BZX84-C10 C 0.3W zener 10VZ9 SOT23 SST309 JFETZA SOD110 BZX284-C7V5 I 0.4W zener 7.5V 5% ZA SOD323 PDZ6.2B I 6.2V 0.4W zenerZB SOD110 BZX284-C8V2 I 0.4W zener 8.2V 5% ZB SOD323 PDZ6.8B I 6.8V 0.4W zenerZB SOT23 FMMT4123 NPNZB SOT23 FMMT4123 N 2N4123ZC SOD110 BZX284-C9V1 I 0.4W zener 9.1V 5% ZC SOD323 PDZ7.5B I 7.5V 0.4W zenerZC SOT23 FMMT4124 NPNZC SOT23 FMMT4124 N 2N4124ZC SOT23 MMBT4124 NPNZC SOT23 SMBT4124 NPNZC SOT23 YTS4124 NPNZD SOD110 BZX284-C10 I 0.4W zener 10V -5% ZD SOD323 PDZ8.2B I 8.2V 0.4W zenerZD SOT23 FMMT4125 PNPZD SOT23 FMMT4125 N 2N4125ZD SOT23 MMBT4125 PNPZD SOT23 MMBT4125 N 2N4125ZD SOT23 YTS4125 PNPZE SOD110 BZX284-C11 I 0.4W zener 11V -5% ZE SOD323 PDZ9.1B I 9.1V 0.4W zenerZE SOT23 FMMT4126 PNPZE SOT23 FMMT4126 N 2N4126ZE SOT23 MMBT4123 N 2N4123ZF SOD110 BZX284-C12 I 0.4W zener 12V -5% ZF SOD323 PDZ10B I 10V 0.4W zenerZG SOD110 BZX284-C13 I 0.4W zener 13V -5% ZG SOD323 PDZ11B I 11V 0.4W zenerZH SOD110 BZX284-C15 I 0.4W zener 15V -5% ZH SOD323 PDZ12B I 12V 0.4W zenerZHK 2W SMD SM2Z5V1 I 5.1V 2W zenerZHL 2W SMD SM2Z5V6 I 5.6V 2W zenerZHW 2W SMD SM2Z12 I 12V 2W zenerZI SOD110 BZX284-C16 I 0.4W zener 16V -5% ZJ SOD110 BZX284-C18 I 0.4W zener 18V -5% ZJ SOD323 PDZ13B I 13V 0.4W zenerZJF 2W SMD SM2Z18 I 18V 2W zenerZJQ 2W SMD SM2Z30 I 30V 2W zenerZK SOD110 BZX284-C20 I 0.4W zener 20V -5% ZK SOD323 PDZ15B I 15V 0.4W zenerZKR 2W SMD SM2Z150 I 150V 2W zenerZL SOD110 BZX284-C22 I 0.4W zener 22V -5% ZL SOD323 PDZ16B I 16V 0.4W zenerZM SOD110 BZX284-C24 I 0.4W zener 24V -5% ZM SOD323 PDZ18B I 18V 0.4W zenerZN SOD110 BZX284-C27 I 0.4W zener 27V -5% ZN SOD323 PDZ20B I 20V 0.4W zenerZO SOD110 BZX284-C30 I 0.4W zener 30V -5% ZP SOD100 BZX284-C33 I 0.4W zener 33V -5% ZP SOD323 PDZ22B I 22V 0.4W zenerZQ SC59 2PB601AQ NPNZQ SOD110 BZX284-C36 I 0.4W zener 36V -5% ZQ SOD323 PDZ24B I 24V 0.4W zenerZ-Q SOT323 2PC4081Q N gp npn hfe 120-270 ZR SC59 2PB601AR NPNZR SOD110 BZX284-C39 I 0.4W zener 39V -5% ZR SOD323 PDZ27B I 27V 0.4W zenerZR SOT323 MSD1819A N npn gp 50VZ-R SOT323 2PC4081R N gp npn hfe 180-390 ZS SC59 2PB601AS NPNZS SOD110 BZX284-C43 I 0.4W zener 43V -5% ZS SOD323 PDZ30B I 30V 0.4W zenerZ-S SOT323 2PC4081S N gp npn hfe 270-560 ZS1 SOT23 ZHCS1000 C schottky 1A 30VZS7 SOT23 ZHCS750 C schottky 0.75A 30VZT SOD110 BZX284-C47 I 0.4W zener 47V -5% ZT SOD323 PDZ33B I 33V 0.4W zenerZTA96 SOT223 PZTA96T1 PNPZtQ SOT323 2PC4081Q N gp npn hfe 120-270 ZtR SOT323 2PC4081R N gp npn hfe 180-390 ZtS SOT323 2PC4081S N gp npn hfe 270-560 ZU SOD110 BZX284-C51 I 0.4W zener 51V -5% ZU SOD323 PDZ36B I 36V 0.4W zenerZV SOD110 BZX284-C56 I 0.4W zener 56V -5% ZW SOD110 BZX284-C62 I 0.4W zener 62V -5% ZX SOD110 BZX284-C68 I 0.4W zener 68V -5% ZY SOD110 BZX284-C75 I 0.4W zener 75V -5%。
BC847AWT1G;BC847CWT3G;BC847CWT1G;BC848BWT1G;BC848CWT1G;中文规格书,Datasheet资料
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
1.2
1.6
2.0
2.4
2.8
0 0.02
0.1
1.0
IB, BASE CURRENT (mA)
10 20
Figure 5. Collector Saturation Region
0.2
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
Features
• AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage
BC847BVN中文资料
2001 Nov 07
3
Philips Semiconductors
Product specification
NPN/PNP general purpose transistor
BC847BVN
handbook, halfpage
(1)
600
MLD703
handbook, halfpage
1200 mV 1000
TR1 (NPN); IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.4
Collector-emitter saturation voltage as a function of collector current: typical values.
Fig.6
DC current gain as a function of collector current: typical values.
Fig.7
Base-emitter voltage as a function of collector current; typical values.
−104 handbook, halfpage VCEsat (mV) −103
Per transistor; for the PNP transistor with negative polarity VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Per device Ptot Note 1. Transistor mounted on an FR4 printed-circuit board. 2001 Nov 07 2 total power dissipation 300 mW collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature open emitter open base open collector 50 45 5 100 200 200 200 +150 150 +150 V V V mA mA mA mW °C °C °C
BC847B;中文规格书,Datasheet资料
BC847B BC847CSMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAs SILICON EPITAXIAL PLANAR NPNTRANSISTORSs MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKINGsBC847B - THE PNP COMPLEMENTARY TYPE IS BC857BAPPLICATIONS s WELL SUITABLE FOR PORTABLE EQUIPMENTs SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE®June 2002ABSOLUTE MAXIMUM RATINGS1/4t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s ) -Ob s o l eTHERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)BC847B / BC847CBC847B / BC847COb s o l e t e P r o d uc t (s ) - O b s o l e t e P r od u c t (s ) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2002 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.BC847B / BC847CO b s o l e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s )分销商库存信息: STMBC847B。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
μA
μA μA
fT
Cob
f=100MHz
VCB=10V,f=1MHz
4.5
pF
B,Jul,2013
Typical Characteristics
Static Characteristic
10
BC847
hFE —— IC
COMMON EMITTER VCE= 5V Ta=100℃
(mA)
8
COMMON EMITTER Ta=25℃ hFE DC CURRENT GAIN 20uA 18uA 16uA 14uA 12uA
TRANSISTOR (NPN) SOT-23
1. BASE 2. EMITTER
FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
400
200 0.1
1
10
100
10 0.1
1
10
100
COLLECTOR CURREMT
IC
(mA)
COLLECTOR CURREMT
IC
(mA)
100
IC
COMMON EMITTER VCE=5V
——
VBE
500
fT
——
IC
(mA)
IC
T =1 00℃ a
10
TRANSITION FREQUENCY
100
Cob/Cib
——
VCB/VEB
f=1MHz IE=0/IC=0 Ta=25 ℃
250
PC
——
Ta
COLLECTOR POWER DISSIPATION PC (mW)
200
(pF)
10
Cib
CAPACITANCE
C
150
Cob
1
100
50
0.1 0.1
0 1 10 30 0 25 50 75 100 125 150
fT COLLECTOR CURRENT
1
(MHz)
T =2 5℃ a
100
COMMON EMITTER VCE=5V Ta=25℃
10 0.25
0.1 0.2
0.4
0.6
0.8
1.0
2
4
6
8
10
12
BASE-EMMITER VOLTAGE VBE (V)
COLLECTOR CURRENT
IC
(mA)
65 45 30 6 0.1 200 150 -65-150 V A mW ℃ ℃
DEVICE MARKING BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L
B,Jul,2013
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage BC846 BC847 BC848 Collector-emitter breakdown voltage BC846 BC847 BC848 Emitter-base breakdown voltage Collector cut-off current BC846 BC847 BC848 Collector cut-off current BC846 BC847 BC848 Emitter cut-off current DC current gain BC846A,847A,848A BC846B,847B,848B BC847C,BC848C Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) IC=100mA, IB= 5mA IC=100mA, IB= 5mA VCE= 5 V, IC= 10mA hFE VCE= 5V, IC= 2mA IEBO ICEO ICBO VEBO IE= 10µA, IC=0 VCB=70 V , IE=0 VCB=50 V , IE=0 VCB=30 V , IE=0 VCE=60 V , IB=0 VCE=45 V , IB=0 VCE=30 V , IB=0 VEB=5 V , IC=0 110 200 420 0.1 220 450 800 0.5 1.1 100 V V MHz 0.1 0.1 VCEO IC= 10mA, IB=0 VCBO IC= 10µA, IE=0 Symbol Test conditions Min 80 50 30 65 45 30 6 V V V Typ Max Unit
The bottom gasket
Label on the Reel 3000×15 PCS 3000×1 PCS
The top gasket Stamp “EMPTY” on the empty box Seal the box with the tape
Seal the box with the tape
【 南京南山半导体有限公司 — 长电贴片三极管选型资料】
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
BC846A, B BC847A, B, C BC848A, B, C
β=20
IC
500
VCEsat
β=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
——
IC
BASE-EMITTER SATURATION VOLTAGE VBEsat (mV)
800
Ta=25℃
Ta=100 ℃
100
600
Ta=25℃
Ta=100 ℃
Dimensions In Inches Min. Max. 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP. 0.071 0.079 0.022 REF. 0.012 0.020 0° 8°
Symbol VCBO Parameter
3. COLLECTOR
Value
Unit V
Collector-Base Voltage BC846 BC847 BC848
80 50 30
VCEO
Collector-Emitter Voltage
Hale Waihona Puke VBC846 BC847 BC848
VEBO IC PC* TJ Tstg Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature
3000
1000
IC COLLECTOR CURRENT
6
Ta=25℃
100
4
10uA 8uA 6uA 4uA
2
0 0 1 2 3 4 5
IB=2uA
6 7
10 1
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT
10
IC
(mA)
100
1000
VBEsat ——
QA Label
Label on the Inner Box Inner Box: 210 mm× 208 mm×203 mm
Label on the Outer Box Outer Box: 440 mm× 440 mm× 230 mm
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
Ta
(℃ )
B,Jul,2013
【 南京南山半导体有限公司 — 长电三极管选型资料】
Symbol A A1 A2 b c D E E1 e e1 L L1 θ
Dimensions In Millimeters Min. Max. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP. 1.800 2.000 0.550 REF. 0.300 0.500 0° 8°