2SC4225中文资料
2SK1522中文资料(renesas)中文数据手册「EasyDatasheet - 矽搜」
7.如果这些产品或技术受日本出口管理限制,必须是 日本政府根据许可证出口,不能导入比批准目地以外国家.
禁止任何转移或再出口违反出口管制法律和日本及/或目地国家相关规定.
8.请与瑞萨科技公司对这些材料或产品进一步详情 其中所载.
芯片中文手册,看全文,戳
V GS = ±25 V, V DS = 0 V DS = 360 V, V GS = 0 V DS = 400 V, V GS = 0 ID =1毫安,V DS = 10 V ID = 25 A, V GS = 10 V * 1
ID = 25 A, V DS = 10 V * 1 VDS = 10 V, V GS = 0, F = 1兆赫
芯片中文手册,看全文,戳
2SK1521, 2SK1522
绝对最大额定值
(Ta = 25°C)
项目
漏极至源极电压
2SK1521
2SK1522
门源电压
漏极电流
漏电流峰值
身体流失二极管反向漏电流
频道耗散
通道温度
储存温度
注：1.PW
10 µs, 占空比
1%
2.价值在T C = 25°C
符号
ID = 25 A, V GS = 10 V, RL = 1.2
IF = 50 A, V GS = 0
IF = 50 A, V GS = 0, di F/ DT = 100 A /μs的
3
—
远期转移导纳
|yfs|
22
输入电容
Ciss —
输出电容
Coss —
反向传输电容
Crss —
导通延迟时间 上升时间 关断延迟时间 下降时间 身体向前漏二极管 电压
2SK4145中文资料(NEC)中文数据手册「EasyDatasheet - 矽搜」
数据表
交换
N沟道功率MOS FET
2SK4145
描述 2SK4145是N沟道MOS场效应晶体管设计用于高电流开关应用.
特征
低通态电阻
R = 10mΩ以下. （V
低输入电容
C = 5300 pF TYP.
= 10 V, I = 42 A)
订购信息
零件号
镀铅
2SK4145-S19-AY
75 100 125 150 175
T - 外壳温度 -
°C
正向偏置安全工作区
1000
100
10
I
漏极电流
-1一个
0.1
0.1
1
10
100
V - 漏极至源极电压 - V
1000 °C/ W
瞬态热电阻与脉冲宽度
100
总功耗对比 外壳温度
100
80
60
40
20 - 总功耗 - W P
0
0
25 50 75 100 125 150 175
R
-75 -25 25 75
T - 通道温度 -
脉冲
125 175 °C
1000
开关特性
100
t
t
- 开关时间 - 纳秒t , t 10
,t
V = 30 V
,t
V = 10 V
t
R =0
1
0.1
1
t
10
100
I - 漏极电流 - 一个
1000
源极到漏极二极管 正向电压
100
V = 10 V
0V
10
1
250
200 150
NS4225用户手册V1.0
N S4225用户手册V1.0深圳市纳芯威科技有限公司2014年08月修改历史日期版本作者修改说明目录1功能说明 (5)2主要特性 (5)3应用领域 (5)4典型应用电路 (5)5极限参数 (6)6电气特性 (7)7芯片管脚描述 (8)7.1 NS4225管脚分配图 (8)7.2 NS4225引脚功能描述 (8)8NS4225典型参考特性 (9)9NS4225应用说明 (10)9.1 芯片基本结构描述 (10)9.2 低功耗关断控制端/SD (11)9.3 并联BTL输出设置端PBTL (11)9.4 NS4225应用图示 (12)9.4.1 差分输入BTL输出立体声模式 (12)9.4.2 单端输入BTL输出立体声模式 (12)9.4.3 差分输入PBTL输出单声道模式 (13)9.4.4 单端输入PBTL输出单声道模式 (13)9.5 NS4225应用参数设置 (14)9.5.1 放大器增益设置 (14)9.5.2 输入电容Ci的选取 (14)9.5.3 电源去耦电容 (15)9.6 输出滤波器 (15)9.7 layout建议 (16)9.8 测试电路 (16)10芯片的封装 (17)图目录图1 NS4225典型应用电路 (6)图2 NS4225管脚分配图(top view) (8)图3 NS4225原理框图 (10)图4 /SD管脚设置 (11)图5 PBTL管脚设置 (11)图6 差分输入BTL输出立体声模式 (12)图7 单端输入BTL输出立体声模式 (12)图8 差分输入PBTL输出单声道模式 (13)图9 单端输入PBTL输出单声道模式 (13)图10 输入高通网络 (14)图11 输入高通滤波器曲线 (14)图12 输出端加磁珠应用图 (15)图13 负载为8Ω,转折频率为27kHz的LC输出滤波器 (15)图14 负载为4Ω,转折频率为27kHz的LC输出滤波器 (16)图15 NS4225测试电路 (16)图16 TSSOP-24封装尺寸图 (17)表目录表1 芯片最大物理极限值 (6)表2 NS4225电气特性 (7)表3 NS4225管脚描述 (8)1功能说明NS4225是一款无需滤波器，每声道可输出25W的D类立体声音频功率放大器。
2SC945中文资料(Guangdong Kexin)中文数据手册「EasyDatasheet - 矽搜」
SMD型
NPN硅晶体管 2SC945
■ 特征
● 集电极电流高达150mA
● 高ħ
线性
晶体管二极管
SOT-23
■ 绝对最大额定值大= 25℃
参数 集电极基极电压 集电极到发射极电压 发射器基极电压
集电极电流（DC）
功耗 结温 存储温度范围
■ 电气特性TA = 25℃
参数 集电极基击穿电压
集电极 - 发射极击穿电压
发射基地击穿电压 集电极截止电流 发射极截止电流
DC电流增益
集电极饱和电压 基本饱和电压 收藏家基地电容 噪声系数 转换频率
符
额定值
Unit
V
60
V
V
50
V
V
5
V
I
150
mA
P
200
mW
T
150
℃
T
-55到+150
℃
符
V V V
I I
h
V V
C NF f
Min Typ Max Unit
60
V
50
V
μA
130
400
40
0.3 V
1.0 V
3.0 pF
4 10 dB
150
MHz
1
芯片中文手册,看全文,戳
SMD型
2SC945
晶体管二极管
2
Testconditons I =100 μA, I =0 I =1mA, I =0 I =100 μA, I =0 V = 60V, I = 0 V = 5.0 V, I = 0 V = 6.0V, I =1.0mA V = 6.0V, I =0.1mA I =100mA,I =10mA I =100mA,I =10mA V = 10 V, I = 0,F = 1兆赫 V =6V,I =0.1mA,R =10kΩ,f=1kMHZ V =6V,I =10毫安,F = 30兆赫
2SC3545中文资料
1.6
1.4
1.2
1.0
0.9
0.8
0.5
REACTANCE COMPONENT
( ) ––R–– ZO
0.2
S11e
0.4
0.6
0.8
0.2 GHz
1.0
0.8 1.0
IC = 5 mA IC = 10 mA
1.8 2.0
3.0
4.0
5.0
10 20 50
0.2 GHz
S22e 1.6 GHz
10 20
2
CC.rb'b-Collector to Base Time Constant-ps
Gmax-Maximum Available Gain-dB |S21e|2-Insertion Gain-dB
Cre-Feed-back Capacitance-pF
2SC3545
TYPICAL DEVICE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 3
元器件交易网
S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 10 V, 200 MHz Step
0.6 0.8
0.7
0.404.06 0.5
0.09
0.007.413300.008.42
0.6
0.41 120
0.7
0.10 0.40
S21
114.1 92.9 81.7 70.2 62.8 54.4 47.9 40.9
S21
104.9 87.4 78.0 67.2 60.1 52.5 46.3 39.5
S12
0.037 0.055 0.077 0.098 0.108 0.125 0.148 0.160
纳芯威NS4225 23W双声道D类音频功率放大器附加PBTL BTL功能说明书
NS42251特性●输出功率：10W×2(8Ω负载/VCC=12V/THD+N=10%/BTL模式) 23W×2(8Ω负载/VCC=18V/THD+N=10%/BTL模式) 17W×2(4Ω负载/VCC=12V/THD+N=10%/BTL模式) 20W(4Ω负载/VCC=12V/THD+N=10%/PBTL模式) 46W(4Ω负载/VCC=18V/THD+N=10%/PBTL模式)●推荐工作电压：6V～18V●PBTL输出功能●无需滤波器设计●差分输入方式●效率高达94%(8Ω负载/VCC=12V/Po=8W×2)●优异的“上电，掉电”噪声抑制●过流保护、过热保护、欠压保护●TSSOP-24封装2应用范围●蓝牙音响●移动音箱扩音器●其他消费类音频设备3说明NS4225是一款无需滤波器，每声道可输出25W的D类立体声音频功率放大器。
NS4225采用先进的技术，在全带宽范围内极大地降低了EMI干扰，最大限度地减少对其他部件的影响。
其输出无需滤波器的PWM调制结构减少了外部元件、PCB 面积和系统成本。
NS4225工作在PBTL模式时，即为一单声道音频功放。
此时，输出驱动能力更强，功放效率更高。
NS4225内置过流保护、过热保护及欠压保护功能，有效地保护芯片在异常工作状况下不被损坏。
NS4225提供TSSOP-24封装，额定的工作温度范围为-40℃至85℃。
4典型应用电路管脚配置极限工作参数●电源电压范围6V~20V ●/SD/PBTL/BTL/LINP/LINN/RINP/RINL管脚电压0V~5V ●ESD电压2000V ●工作温度范围-40℃~+85℃●存储温度范围-65℃~+150℃●最大结温+150℃●焊接温度（10s内）+260℃●θJC/θJA33/30o C/W 注：超过上述极限工作参数范围可能导致芯片永久性的损坏。
长时间暴露在上述任何极限条件下可能会影响芯片的可靠性和寿命。
S4225开关调色温控制芯片
-----------------------------------------------------------------------------------------S4225XX-DS-V1p1 Page 9 of 9
深圳市芯飞制芯片
DIP8 封装说明
S4225XX-DS-V1p1
Page 8 of 9
深圳市芯飞凌半导体有限公司
S4225xx 系列开关调色温控制芯片
深圳：
QQ:3400462929 TEL:13148775181
深圳市芯飞凌半导体有限公司 Silicon Driver Semiconductor Co., Ltd
应用极限参数
参数 Vcc – Gnd Vdd- Gnd Clk - Gnd D1,D2-gnd 工作温度范围 结温范围 存储温度范围 静电保护人体模式 静电保护机器模式
(Note1)
范围 -0.3V ~ 25V 0.3V ~ 6V 0.3V ~ 6V 0.3 V~55V .-20℃ to +125℃ -20℃ to +125℃ -40℃ to +150℃ 2000V 500V
drv
AC
drv
cs gnd
cs gnd
U1
LED1 LED2
C1
S42xx vdd clk
gnd
R2 R1 D1 clk vdd S42xx R3 C1 gnd U1 vcc D1
D2
vcc R1 R2
D1
D2
LED1
LED2
D1
图1 S4225典型图 S4225XX-DS-V1p1 Page 1 of 9
的电容可以保持 5S 左右
2SC3425资料
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)2SC3425Switching Regulator and High-Voltage Switching ApplicationsHigh-Speed DC-DC Converter Applications• Excellent switching times: t r = 1.0 μs (max)t f = 1.5 μs (max), (I C = 0.5 A)• High breakdown voltage: V CEO = 400 VAbsolute Maximum Ratings (Tc = 25°C)Characteristics Symbol Rating UnitCollector-base voltage V CBO 500 V Collector-emitter voltage V CEO 400 V Emitter-base voltage V EBO7 VDC I C 0.8Collector current Pulse I CP 1.5ABase current I B 0.5 A Ta = 25°C 1.2 Collector powerdissipationTc = 25°CP C 10WJunction temperature T j 150 °C Storage temperature rangeT stg−55 to 150°CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Industrial ApplicationsUnit: mmJEDEC ― JEITA―TOSHIBA 2-8H1AWeight: 0.82 g (typ.)Electrical Characteristics (Tc = 25°C)MarkingPart No. (or abbreviation code)lead (Pb)-free package or lead (Pb)-free finish.Collector-emitter voltage V CE (V)I C – V CEC ol l e ct o r c u r r e n t I C(m A )Collector current I C (mA)h FE – I CD C c u r r e n t g a i nh F ECollector current I C (mA)V CE (sat) – I CC o l l e c t o r -e m i t t e r s a t u r a t i o n v o l t a g e V C E (s a t )(V )Collector current I C (mA)V BE (sat) – I CB a s e -e m i t t e r s a t u r a t i on v ol t a g e V B E (s a t )(V )Collector current I C (mA)V CE (sat) – I CC o l l e c t o r -e m i t t e r s a t u r a t i on v o l t a g e V C E (s a t )(V )Collector current I C (mA)V BE (sat) – I CB a s e -e m i t t e r s a t u r a t i o n v o l t a g e V B E (s a t ) (V )110 100 10003 30300 110 100 10003 303001300 10003Base-emitter voltage V BE (V)I C – V BECo l l ec t o r c u r r e n tI C (A )Base-emitter voltage V BE (V)I C – V BEC ol l e c to r c u r r e n tI C (m A )Collector current I C (A)Switching CharacteristicsSw i tc h in g ti m e(μs )10−10−10−Pulse width t w (s)r th – t wT r a n s i e n t t h e r m a lr e s i s t a n c er t h (°C /W )Collector-emitter voltage V CE (V)Safe Operating AreaC o l l e c t o r c u r r e n t I C (A )0.00110000.01 0.1 100 10 1RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。
RS232 485 422 通信模块 AN3485 用户手册说明书
第一部分RS232/485/422通信模块说明黑金AN3845模块专门为工业现场应用设计的RS232/485/422通信模块。
它包含一路RS232接口，2路RS485和2路RS422通信接口。
配合开发板实现RS232、485和422的数据远程传输和通信。
RS232、485和422接口分别采用MAX3232、MAX3485和MAX3490芯片作为电平转换芯片。
模块留有一个40针的排母用于连接开发板，RS232接口为一个标准的DB9串口公座，通过串口线直接连接电脑或者其他设备；RS485和RS422接口采用接线端子跟外部连接，超远距离传输可达上千米，另外RS485和RS422接口部分带有正负15KV的ESD 防护功能。
AN3845模块实物照片如下：AN3845通信模块正面图1.1 AN3485模块的参数说明以下为AN3485通信模块的详细参数:RS232接口●一路标准的DB9公座串行接口；●使用MAX3232作为RS232和TTL电平的转换；●传输率高达120Kbps数据通讯速率RS485接口●两路RS485接口，采用3线的接线端子；●使用MAX3485作为RS485和TTL的电平转换;●工业级设计，抗干扰能力超强，同时采用有效的防雷设计;●具有120欧匹配电阻，插上跳线帽即可使能匹配电阻，长距离传输时建议短接。
●支持多机通讯，允许接在最多128个设备的总线上●传输率高达500Kbps数据通讯速率。
RS422接口●两路RS422接口，采用5线的接线端子；●使用MAX3490作为RS422和TTL的电平转换;●工业级设计，抗干扰能力超强，同时采用有效的防雷设计;●具有120欧匹配电阻，插上跳线帽即可使能匹配电阻，长距离传输时建议短接。
●支持多机通讯，允许接在最多128个设备的总线上●传输率高达500Kbps数据通讯速率。
1.2 AN3485模块尺寸AN3485通信模块尺寸图第二部分模块功能说明2.1 RS232电路设计AN3485模块的RS232接口采用MAX3232芯片实现RS232和+3.3V TTL 电平的转换。
2SK2645-01MR中文资料(fuji)中文数据手册「EasyDatasheet - 矽搜」
工作和存储 温度范围
绝对最大额定值
符号
V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg
额定值
600 ±9 ±32 ±35
9 71.9 50 +150 -55到+150
*1 L=1.63mH, Vcc=60V
单元
V A A V A mJ W °C
等效电路图
2SK2645-01MR
富士功率MOSFET
漏源导通状态电阻
RDS(on)=f(Tch):ID=4.5A,VGS=10V
4.0
3.5
3.0
2.5
] RDS(2o.0n) [
1.5
1.0
max. tห้องสมุดไป่ตู้p.
0.5
0.0 -50
0
50
100
150
Tch [ C]
栅极阈值电压
VGS(th)=f(Tch):ID=1mA,VDS=VGS
VSD [V]
0
0
50
100
150
启动总胆固醇[C]
3
芯片中文手册,看全文,戳
2SK2645-01MR
瞬态热impedande
Zthch = F（T）参数：D = T / T
10
D=0.5 10
0.2
0.1
Zthch-c0[.K05/W]
10 0.02
0.01 0
10
10
10
10
ID=4.5AV DS=25V VDS=25V VGS=0V f=1MHz VCC=300VI D=9A
VGS=10V
RGS=10
Tch=25°C Tch=125°C
2SC2925S资料
Unit: mm
4.0±0.2
M Di ain sc te on na tin nc ue e/ d
0.7±0.1
• High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)
750
mW
or m
1 000 0.15 11
0.7
A
2.3±0.2
IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0
Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
50
15
Collector-base cutoff current (Emitter open)
*
VCB = 20 V, IE = 0 VCE = 20 V, IB = 0
si
Collector-emitter cutoff current (Base open) Forward current transfer ratio
Unit V V V µA µA V pF
Publication date: March 2003
SJC00124BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2925
PC Ta
1.0
120 Ta = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2545ETZ-E中文资料
2SC2545, 2SC2546, 2SC2547Silicon NPN EpitaxialREJ03G0699-0300(Previous ADE-208-1067A)Rev.3.00Aug.10.2005 ApplicationLow frequency low noise amplifierOutline1. Emitter2. Collector3. Base321Absolute Maximum Ratings(Ta = 25°C)2SC2547Unit2SC2545Item Symbol2SC2546Collector to base voltage V CBO 60 90 120 VCollector to emitter voltage V CEO 60 90 120 VEmitter to base voltage V EBO 5 5 5 VCollector current I C 100 100 100 mAEmitter current I E –100 –100 –100 mACollector power dissipation P C 400 400 400 mWJunction temperature Tj 150 150 150 °CStorage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °CElectrical Characteristics(Ta = 25°C)2SC25452SC25462SC2547Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdownvoltageV(BR)CBO60 — — 90 — — 120 — — V I C = 10 µA, I E = 0Collector to emitter breakdown voltage V(BR)CEO60 — — 90 — — 120 — — V I C = 1 mA,R BE = ∞Emitter to base breakdownvoltageV(BR)EBO 5 — — 5 — — 5 — — V I E = 10 µA, I C = 0 Collector cutoff current I CBO— — 0.1 — — 0.1 — — 0.1 µA V CB = 50 V, I E = 0 Emitter cutoff current I EBO— — 0.1 — — 0.1 — — 0.1 µA V EB = 2 V, I C = 0 DC current transfer ratio h FE*1 250 — 1200600 — 1200250 — 800 V CE = 12 V,I C = 2 mACollector to emitter saturation voltage V CE(sat) — — 0.2 — — 0.2 — — 0.2 V I C = 10 mA,I B = 1 mABase to emitter voltage V BE— 0.6 — — 0.6 — — 0.6 — V V CE = 12 V,I C = 2 mAGain bandwidth product f T— 90 — — 90 — — 90 — MHz V CE = 12 V,I C = 2 mA Collectoroutputcapacitance Cob — 3.0 — — 3.0 — — 3.0 — pF V CB = 10 V, I E = 0,f = 1 MHzNoise voltage referred input e n— 0.5 — — 0.5 — — 0.5 — nV/√Hz V CE = 6V,I C = 10 mA,f = 1 kHz,R g = 0, ∆f = 1HzNote: 1. The 2SC2545 and 2SC2547 are grouped by h FE as follows.DEF 2SC2545 — 400 to 800 600 to 12002SC2547 250 to 500 400 to 800 —Main CharacteristicsAmbient Temperature Ta (°C)Collector to Emitter Voltage V 48Collector to Emitter Voltage V CE (V)121620101520255 µA I B = 000.20.121.00.51050.20.4Base to Emitter Voltage V C o l l e c t o r C u r r e n t I C (m A )0.6DC Current Transfer Ratio vs.Collector CurrentV CE = 12 V Pulse1.00.5g e V C E (s a t ) (V )Collector to Emitter Saturation Voltagevs. Collector CurrentI C1.02510Collector to Base Voltage V CB (V)Collector Output Capacitance vs.2050I E = 0f = 1 MHz0.010.10.030.31.0310Collector Current I C (mA)S i g n a l S o u r c e R e s i s t a n c e R g (k Ω)NF = 0.5 dB124610V CE= 6 Vf = 1 kHz 0.10.030.011.01030.310030Contours of Constant Noise FigureV CE = 6 V f = 120 Hz1010030 R g (k Ω)Contours of Constant Noise FigurePackage Dimensions0.60 Max0.55 Max0.712.70.5 Max1.272.54Ordering InformationPart NameQuantityShipping Container2SC2545ETZ-E 2SC2545FTZ-E 2SC2546FTZ-E 2SC2547ETZ-E2500Hold Box, Radial TapingNote: For some grades, production may be terminated. Please contact the Renesas sales office to check the state ofproduction before ordering the product. RENESAS SALES OFFICESRefer to "/en/network" for the latest and detailed information.Renesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.ATel: <1> (408) 382-7500, Fax: <1> (408) 382-7501Renesas Technology Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900Renesas Technology Hong Kong Ltd.7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong KongTel: <852> 2265-6688, Fax: <852> 2730-6071Renesas Technology Taiwan Co., Ltd.10th Floor, No.99, Fushing North Road, Taipei, TaiwanTel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999Renesas Technology (Shanghai) Co., Ltd.Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, ChinaTel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952Renesas Technology Singapore Pte. Ltd.1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632Tel: <65> 6213-0200, Fax: <65> 6278-8001Renesas Technology Korea Co., Ltd.Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, KoreaTel: <82> 2-796-3115, Fax: <82> 2-796-2145Renesas Technology Malaysia Sdn. Bhd.Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, MalaysiaTel: <603> 7955-9390, Fax: <603> 7955-9510。
2SK2645中文资料(fuji)中文数据手册「EasyDatasheet - 矽搜」
FAP-IIS系列
特征
高速开关 低导通电阻 无二次击穿 低驱动电源 高压 V GS =±30V防护证 额定重复性雪崩
2SK2645-01MR
外形图
N沟道MOS-FET
600V
1,2
9A
50W
应用
开关稳压器
UPS DC-DC转换
通用功率放大器
最大额定值和特性
- 绝对最大额定值 （
10
[A] Eas [mJ] I
12
Starting T [°C]
V [V] 本规范如有变更,恕不另行通知！
t [s]
雪崩能力 二极管正向导通电压 反向恢复时间 反向恢复电荷
V GS =0V V DS= V GS Tch=25°C Tch=125°C V DS=0V V GS =10V V DS=25V V DS=25V V GS =0V f=1MHz V CC=300V ID=9A V GS=10V RGS =10 L = 100µH Tch=25°C I F=2xI DR V GS=0V T ch=25°C IF=I DR V GS=0V -dI F/dt=100A/µs T ch=25°C
Unit V A A V A mJ W °C °C
- 电气特性（T
Item
漏源击穿电压 门门限电压 零栅压漏电流 门源漏电流 漏源极导通状态电阻 正向跨 输入电容 输出电容 反向传输电容 导通时间t on (t on =t d(on) +t r ) 关断时间t
off (ton=t d(off)+t f)
Typical Forward Transconductance vs. I
Gate Threshold Voltage vs. T
2SC2235中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」
芯片中文手册,看全文,戳
东芝晶体管
音频功率放大器应用 驱动级放大器的应用
硅NPN外延型（厘进程）
2SC2235
2SC2235
单位：mm
• 为了补充2SA965.
绝对最大额定值
（TA = 25°C）
特点
符
评级
Unit
集电极基极电压
集电极 - 发射极电压
发射极基极电压 集电极电流 基极电流 集电极耗散功率 结温 存储温度范围
100 ms*
10 ms*
50
30 Collector current I
*: Single nonrepetitive 10
pulse Ta = 25°C
5 Curves must be derated
3 linearly with increase in
2SC4331中文资料(renesas)中文数据手册「EasyDatasheet - 矽搜」
与标记 r表示主要修改点 . 现场：修订部分可以通过在 PDF文件中复制一个 "R",并在 "查找内容 "指定它可以很容易地搜索 .
2002
芯片中文手册,看全文,戳
电气特性（T
参数 集电极到发射极电压 集电极到发射极电压
s
0.4
s
基极电流 波形
集电极电流 波形
2
Data Sheet D16136EJ3V0DS
芯片中文手册,看全文,戳
典型特征（T
A = 25°C)
2SC4331,4331-Z
(W)
总容许损耗P
环境温度T
(°C)
(A) 集电极电流I
集电极到发射极电压V
(V)
功率降额dT（％）
案例温度T
L 150至300
K 200至400
切换时间（T
on , t stg , t f）测试电路
2SC4331,4331-Z
MIN. TYP. MAX. 单元
100
V
100
V
10
A
1.0
mA
10
A
1.0
mA
10
A
100
100 200 400
60
0.3
V
0.5
V
1.2
V
1.5
V
60
pF
150
MHz
0.3
s
1.5
8. 你应该使用由瑞萨电子所指定范围内本文档中描述瑞萨电子产品,特别是相对于所述最大额定值,操作电源电压范围,移 动电源电压范围,热辐射特性,安装和其它产品特性.瑞萨电子有权对因使用瑞萨电子产品除这些特定范围故障或损坏 不承担任何责任.
2SC4155A资料
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials
2.1 0.425 1.25 0.425
Unit：ｍｍ
①
②
③
0.9 0.7 0～0.1 0.15
APPLICATION
For Hybrid IC,small type machine low frequency voltage Amplify application.
JEITA：SC-70
MAXIMUM RATINGS（Ta=25℃）
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
2SC5200中文资料(ST)中文数据手册「EasyDatasheet - 矽搜」
高功率NPN外延平面双极型晶体管
特征
■ 高击穿电压V ■ 典型˚F T = 30兆赫
申请书
■ 音频功放
CEO = 230 V
描写
本设备采用新型位-LA（双极型晶体管线性放大器） 技术制造的NPN晶体管.由此产生的晶体管显示出良好的 增益线性特性.
内部示意图
2SC5200
参数
集电极基极电压（I 集电极 - 发射极电压（I 发射极基极电压（I
集电极电流
E = 0) B = 0)
C = 0)
集电极电流峰值
总功耗在T
储存温度
C = 25 °C
工作结温
表 3中 .
符
RthJC
热数据
参数 热阻结案件最大
2SC5200
Value 230 230 5 15 30 150 -55至150 150
Value 0.83
Unit V V V A A W °C °C
Unit °C/W
Doc ID 16310 Rev 1
芯片中文手册,看全文,戳
2SC5200
2
电气特性
Tcase = 25°C除非另有说明
表 4.
电气特性
符
参数
集电极截止电流
ICBO
(IE = 0)
发射极截止电流
I EBO
VCC = 60 V I C = 5A IB1= -I B2 = 0.5 A
IC = 1 A VCE = 5 V VCB = 10 V F = 1兆赫 ≤ 1.5%
Min. Typ. Max. Unit 5 µA
5 µA
230
V
V
3V 1.5 V 55 80 120 35
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3
2SC4225
S-PARAMETER
VCE = 3 V, IC = 3 mA Frequency MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 VCE = 3 V, IC = 10 mA Frequency MHz 100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 MAG 0.583 0.453 0.388 0.367 0.363 0.363 0.360 0.360 0.364 0.384 0.401 0.407 0.408 0.408 0.426 0.442 0.458 0.473 0.480 0.493 S11 ANG –73.8 –112.7 –136.1 –151.2 –162.6 –172.6 178.7 173.2 168.8 164.4 159.4 152.9 148.8 146.0 143.6 141.2 137.3 134.2 131.5 129.0 MAG 18.505 11.723 8.269 6.297 5.086 4.407 3.802 3.468 3.104 2.846 2.595 2.426 2.311 2.093 1.962 1.840 1.732 1.714 1.651 1.626 S21 ANG 129.9 108.7 96.9 90.6 85.0 82.2 76.4 73.4 69.3 65.9 63.5 59.5 56.0 52.9 48.5 48.4 46.3 44.3 41.5 36.4 MAG 0.042 0.059 0.077 0.090 0.103 0.120 0.136 0.155 0.167 0.184 0.199 0.217 0.237 0.244 0.259 0.268 0.282 0.301 0.320 0.338 S12 ANG 64.4 57.2 56.3 59.0 59.3 61.9 61.0 60.6 61.2 59.4 60.3 58.1 56.9 55.1 52.8 54.0 52.3 52.9 50.5 47.9 MAG 0.710 0.451 0.315 0.240 0.191 0.161 0.138 0.121 0.107 0.095 0.085 0.080 0.078 0.089 0.084 0.091 0.103 0.117 0.128 0.139 S22 ANG –44.7 –61.0 –69.6 –73.6 –76.3 –78.8 –82.2 –87.2 –93.1 –101.3 –109.7 –120.3 –130.6 –142.6 –151.9 –160.6 –169.0 –177.8 176.1 172.1 MAG 0.843 0.718 0.594 0.525 0.484 0.462 0.442 0.432 0.427 0.440 0.452 0.453 0.449 0.446 0.465 0.483 0.498 0.512 0.516 0.528 S11 ANG –40.1 –70.6 –94.7 –112.6 –127.3 –140.8 –152.7 –161.9 –169.2 –176.6 175.9 167.6 162.2 158.3 154.7 151.1 145.6 141.5 138.1 135.1 MAG 8.958 7.260 5.738 4.674 3.900 3.448 3.124 2.834 2.501 2.307 2.115 1.987 1.895 1.726 1.627 1.527 1.437 1.431 1.381 1.363 S21 ANG 150.1 129.1 113.1 103.7 95.2 90.4 82.8 78.4 72.7 68.2 64.9 60.0 56.1 52.3 47.4 46.8 44.1 41.9 38.8 33.5 MAG 0.058 0.091 0.113 0.124 0.131 0.142 0.149 0.160 0.165 0.174 0.184 0.198 0.213 0.216 0.226 0.234 0.244 0.262 0.279 0.296 S12 ANG 71.5 56.8 47.2 45.2 42.4 43.3 42.6 42.9 45.0 44.8 47.4 46.8 46.9 46.2 45.3 47.9 47.4 49.2 47.9 46.2 MAG S22 ANG
50 70
2
2SC4225
NF, Ga vs. COLLECTOR CURRENT
Ga - Associated Gain - dB
6
NF - Noise Figure - dB
VCE = 10 V f = 1 GHz Ga 10
5 4 3
5 2 1 0 0 1 3 5 7 10 30 IC - Collector Current - mA NF
Document No. P11192EJ2V0DS00 (2nd edition) Date Published February 1996 P Printed in Japan
0 to 0.1
©
0.15 +0.1 –0.05
0.3 +0.1 –0
1
3
1996
2SC4225
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 100 70 50 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 10 V
IC - Collector Current - mA
hFE - DC Current Gain
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1 1.25 ± 0.1
FEATURES
2.0 ± 0.2 0.3 +0.1 –0
• Low Noise and High Gain NF = 1.5 dB TYP. S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz at VCE = 10 V, IC = 20 mA, f = 1 GHz (reference value)
VCE = 3 V, IC = 20 mA, f = 1 GHz VCB = 3 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 20 mA, f = 1 GHz VCE = 3 V, IC = 5 mA, f = 1GHz
hFE Classifications
Rank Marking hFE R2 R2 40 to 120 R3 R3 100 to 200
0.65 0.65
2
0.3
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCB0 VCE0 VEB0 IC PT Tj Tstg 25 12 3.0 70 160 150 –65 to +150 V V V mA mW ˚ C ˚ C
DATA SHEET
SILICON TRANSISTOR
2SC4225
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
DESCRIPTION
The 2SC4225 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF through UHF band. It has large dynamic range and good current characteristics.
20 10 5 2 1 0.5 0.5 0.6 0.7 0.8 VBE - Base to Emitter Voltage - V 0.9
50 30 20
10 0.5
1
2 5 10 20 IC - Collector Current - mA
50 70
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 7 15 VCE = 10 V
0.9 ± 0.1
Marking
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Characteristics Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Symbol ICB0 IEB0 hFE fT Cob S21e 2 NF 7.5 40 80 4 1.2 9.0 1.5 3.0 1.8 MIN. TYP. MAX. 1.0 1.0 200