5STP 12F4000中文资料

1)Maximum ratings are those values beyond which damage to the device may occurABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.V DSM =4200V I TAVM =1150A I TRMS =1800A I TSM =15000A V T0=0.95V r T =0.575m ΩPhase Control Thyristor5STP 12F4200Doc. No. 5SYA1021-03 Jan. 02•Patented free-floating silicon technology •Low on-state and switching losses•Designed for traction, energy and industrial applications •Optimum power handling capabilityBlockingMaximum rated values1)Symbol Conditions 5STP 12F42005STP 12F40005STP 12F3600V DRM, V RRM f = 50 Hz, t p = 10 ms 4200 V 4000 V 3600 V V RSM t p = 5 ms, single pulse4600 V4400 V 4000 VdV/dt crit Exp. to 0.67 x V DRM , T vj = 125°C1000 V/µs Characteristic valuesParameterSymbol Conditions mintypmax Unit Forward leakage current I DRM V DRM , T vj = 125°C 200mA Reverse leakage currentI RRMV RRM , T vj = 125°C200mAMechanical dataMaximum rated values1)Parameter Symbol Conditions min typ max Unit Mounting force F M 142224kN Acceleration a Device unclamped 50m/s 2AccelerationaDevice clamped100m/s 2Characteristic valuesParameter Symbol Conditions min typ maxUnit Weightm 0.6kg Surface creepage distance D S 25mm Air strike distanceD a14mm元器件交易网On-stateMaximum rated values1)ParameterSymbol Conditions min typ max Unit Average on-state current I TAVM Half sine wave, T c = 70°C 1150A RMS on-state current I TRMS 1800A Peak non-repetitive surge currentI TSM 15000A Limiting load integral I 2t tp = 10 ms, T vj = 125°C,V D = V R = 0 V1125kA 2s Peak non-repetitive surge currentI TSM 16000A Limiting load integralI 2ttp = 8.3 ms, T vj = 125°C,V D = V R =0 V1062kA 2s Characteristic valuesParameter Symbol Conditions mintypmax Unit On-state voltage V T I T = 2000 A, T vj = 125°C 2.1V Threshold voltage V T00.95V Slope resistance r T I T = 600 A - 1800 A, T vj = 125°C0.575m ΩHolding current I H T vj = 25°C 80mA T vj = 125°C 60mA Latching currentI LT vj = 25°C 500mA T vj = 125°C200mASwitchingMaximum rated values1)ParameterSymbol Conditions min typ max Unit Critical rate of rise of on-state currentdi/dt crit Cont.f = 50 Hz 100A/µs Critical rate of rise of on-state currentdi/dt critT vj = 125°C, I TRM = 2000 A,V D ≤ 0.67⋅V DRM ,I FG = 2 A, t r = 0.5 µsCont.f = 1Hz 1000A/µs Circuit-commutated turn-off timet q T vj = 125°C, I TRM = 2000 A,V R = 200 V, di T /dt = -5 A/µs,V D ≤ 0.67⋅V DRM , dv D /dt = 20 V/µs,600µsCharacteristic valuesParameter Symbol Conditions min typ max Unit Recovery charge Q rr T vj = 125°C, I TRM = 2000 A,V R = 200 V, di T /dt = -5 A/µs 25004000µAs Delay timet dV D = 0.4⋅V DRM , I FG = 2 A, t r = 0.5 µs2µsTriggeringMaximum rated values1)ParameterSymbol Conditions min typ max Unit Peak forward gate voltage V FGM 12V Peak forward gate current I FGM 10A Peak reverse gate voltage V RGM 10V Gate power loss P G For DC gate current3WAverage gate power lossP GAVsee Fig. 9Characteristic valuesParameter Symbol Conditions mintypmax Unit Gate trigger voltage V GT T vj = 25°C 2.6V Gate trigger current I GT T vj = 25°C400mA Gate non-trigger voltage V GD V D = 0.4 x V DRM , T vjmax = 125°C 0.3V Gate non-trigger currentI GDV D = 0.4 x V DRM , T vjmax = 125°C 10mAThermalMaximum rated values1)Parameter Symbol Conditions min typ max Unit Operating junction temperature rangeT vj125°C Storage temperature range T stg -40140°C Characteristic valuesParameterSymbol Conditionsmintypmax Unit Thermal resistance junction to caseR th(j-c)Double-side cooled 17K/kW R th(j-c)A Anode-side cooled 33K/kW R th(j-c)CCathode-side cooled 35K/kW Thermal resistance case to heatsinkR th(c-h)Double-side cooled 4K/kW R th(c-h)Single-side cooled8K/kWAnalytical function for transient thermalimpedance:)e -(1R = (t)Z n1i t/-i thJC i å=τi 1234R i (K/kW)10.35 3.76 2.290.67τi (s)0.37230.05250.00570.0023Fig. 1 Transient thermal impedance junction-to case.Fig. 2On-state characteristics.Fig. 3On-state characteristics.T j =125°C, 10ms half sineFig. 4On-state power dissipation vs. mean on-statecurrent. Turn - on losses excluded.Fig. 5Max. permissible case temperature vs. meanon-state current.Fig. 6Surge on-state current vs. pulse length. Half-sine wave.Fig. 7Surge on-state current vs. number of pulses.Half-sine wave, 10 ms, 50Hz.Fig. 8Recommended gate current waveform.Fig. 9Max. peak gate power loss.Fig. 10Recovery charge vs. decay rate of on-statecurrent.Fig. 11Peak reverse recovery current vs. decay rateof on-state current.ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.ABB Switzerland Ltd Doc. No. 5SYA1021-03 Jan. 02Semiconductors Fabrikstrasse 3CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419Fax +41 (0)58 586 1306Fig. 12Device Outline Drawing.。