BC847BLP-7中文资料
BC847A中文资料
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BANDWIDTH = 15.7 kHz
100
I C = 100 µA I C = 30 µA
10
I C = 10 µA
2,000 5,000 10,000 20,000 50,000 100,000
1 25
50 75 100 125 T A - AMBIE NT TEMPERATURE ( °C)
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Saturation Voltage vs Collector Current
0.3 0.25 0.2
125 °C
V CE = 5.0 V
β = 10
0.15 0.1 0.05 0.1
25 °C - 40 °C
400
- 40 °C
200 0 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100
Absolute Maximum Ratings*
Symbol
VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
Collector-Cutoff Current vs Ambient Temperature
BC847贴片三极管规格书
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μA
μA μA
fT
Cob
f=100MHz
VCB=10V,f=1MHz
4.5
pF
B,Jul,2013
Typical Characteristics
Static Characteristic
10
BC847
hFE —— IC
COMMON EMITTER VCE= 5V Ta=100℃
(mA)
8
COMMON EMITTER Ta=25℃ hFE DC CURRENT GAIN 20uA 18uA 16uA 14uA 12uA
TRANSISTOR (NPN) SOT-23
1. BASE 2. EMITTER
FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
400
200 0.1
1
10
100
10 0.1
1
10
100
COLLECTOR CURREMT
IC
(mA)
COLLECTOR CURREMT
IC
(mA)
100
IC
COMMON EMITTER VCE=5V
——
VBE
500
fT
——
IC
(mA)
IC
T =1 00℃ a
10
TRANSITION FREQUENCY
100
Cob/Cib
——
VCB/VEB
f=1MHz IE=0/IC=0 Ta=25 ℃
BC847CT-TP;BC847AT-TP;BC847BT-TP;中文规格书,Datasheet资料
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BC847AT, BT, CTNPNSurface Mount Small Signal Transistor150mWFeaturesx Epitaxial Die Constructionx Complementary PNP Type Available (BC857AT,BT,CT)x Ultra-Small Surface Mount Packageomp onents20736 Marilla Street Chatsworth! "# $ % ! "#Micro Commercial Components • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)• Epoxy meets UL 94 V-0 flammability ratingElectrical Characteristics @ 25к Unless Otherwise SpecifiedSymbol Parameter Min Ty p Max Units Test ConditionOFF CHARACTERISTICSh FE DC Current Gain (Note 2)Current Gain A B C 110 200 420---290520222450800--- V CE =5.0V, I C =2.0mAV CE(SAT)Collector-Emitter Saturation Voltage (Note 2)--- --- 250600mVI C =10mA, I B =0.5mAI C =100mA, I B =5.0mA V BE(SAT)Base-Emitter Saturation Voltage(Note 2) ---700900--- mVV BE(ON) Base-Emitter Voltage (Note 2) 580 ---660--- 700770mVV CE =5.0V, I C =2.0mAV CE =5.0V, I C =10mAI CBO I CBO Collector-Cutoff Current (Note 2) --------- --- 155.0nAµA V CB =30V, I E =0V CB =30V, T j =125кf TGain Bandwidth Product100 --- --- MHzV CE =5.0V, I C =10mA,f=100MHzC CBO Collector-Base Capacitance--- --- 4.5 pF V CB =10V, f=1.0MHzNFNoise Figure BC847BTBC847CT--- --- 104.0dBV CE =5V,R S =2.0Kohm,f=1.0MHz,BW=200HZNote: 2. Short duration pulse test used to minimize self-heating effect.BC847AT, BT, CTMicro Commercial ComponentsI C =10mA, I B =0.5mA I C =100mA, I B =5.0mAMicro Commercial ComponentsOrdering Information :Device PackingPart Number-T P Tape&Reel;3Kpcs/Reel***IMPORTANT NOTICE***Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT***MCC's products are not authorized for use as critical components in life support devices or systems without the express writtenapproval of Micro Commercial Components Corporation.***CUSTOMER AWARENESS***Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.分销商库存信息:MICRO-COMMERICAL-COBC847CT-TP BC847AT-TP BC847BT-TP。
BC847B中文资料
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BC847B / BC847CTransistors1/1NPN General Purpose TransistorBC847B / BC847C!Features1) BV CEO < 45V (I C =1mA)2) Complements the BC857B.!Package, marking, and Packaging specificationsBC847C SST3G1G T1163000BC847B SST3G1F T1163000Part No.Packaging typeMarking CodeBasic ordering unit (pieces)!External dimensions (Units : mm)ROHM : SST3(1) Emitter (2) Base (3) Collector0~0.10.2Min.2.4±0.21.30.950.45±0.10.150.42.9±0.21.9±0.20.950.95+0.2−0.1−0.1+0.2+0.1−0.06+0.1−0.05(2)(1)(3)All terminals have the same dimensions!Absolute maximum ratings (T a=25°C)ParameterSymbol V CBO V CEO V EBO I C Tj TstgLimits 504560.10.35150−55~+150Unit V V V A ∗P C 0.2W °C °CCollector-base voltage Collector-emitter voltage Emitter-base voltage Collector currentJunction temperature Storage temperatureCollector power dissipation ∗ When mounted on a 7×5×0.6mm ceramic board.!Electrical characteristics (T a=25°C)ParameterMin.Typ.Max.Unit Conditions50456−−−−−−−−−−155V V V µA nA I C =50µA I C =1mA I E =50µA V CB =30VV CB =30V, Ta =150°C −0.58−0.77V −−0.6I C /I B =100mA/5mA −−0.25V I C /I B =10mA/0.5mA V CE /I C =5V/10mAV CE /I C =5V/2mA BC847B 200450−−V CE /I C =5V/2mA BC847C 420800−−−2003−−MHz pF V CE =5V, I E =−20mA, f =100MHz V CB =−10V, I E =0, f =1MHz Symbol BV CBO BV CEO BV EBO I CBO V BE(on)V CE(sat)h FE f T Cob Cib−8−pFV EB =0.5V, I C =0, f =1MHzCollector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff currentBase-emitter saturation voltage Collector-emitter saturation voltage DC current transfer ratio Transition frequency Collector output capacitance Emitter input capacitance!Electrical characteristic curvesThe electrical characteristic curves for these products are the same as those of UMT222A, SST222A, MMST2222A and PN2222A.AppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.0。
BC847三极管
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103
0 10−2
10−1
1
10
102 103 I C (mA)
BC847B; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
BC847B; VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
VALUE 500
UNIT K/W
2002 Feb 04
3
Philips Semiconductors
Product specification
NPN general purpose transistors
CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = 30 V; IE = 0 VCB = 30 V; IE = 0; Tj = 150 °C IEBO hFE emitter-base cut-off current DC current gain BC846A; BC847A BC846B; BC847B; BC848B BC847C DC current gain BC846 BC847 BC846A; BC847A BC846B; BC847B; BC848B BC847C VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA IC = 100 mA; IB = 5 mA; note 1 VBE Cc fT F base-emitter voltage collector capacitance transition frequency noise figure IC = 2 mA; VCE = 5 V IC = 10 mA; VCE = 5 V VCB = 10 V; IE = Ie = 0; f = 1 MHz VCE = 5 V; IC = 10 mA; f = 100 MHz IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz IC = 2 mA; VCE = 5 V VEB = 5 V; IC = 0 IC = 10 µA; VCE = 5 V
BC847BPN中文资料
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PACKAGE OUTLINE Plastic surface mounted package; 6 leads
D
B
Preliminary specification
BC847BPN
SOT363
E
A
X
y
6
5
4
pin 1 index
1
2
1.35 1.15
1.3
0.65
2.2 2.0
0.45 0.25 0.15 0.15
0.2
0.2
0.1
OUTLINE
VERSION
IEC
SOT363
1999 Apr 26
REFERENCES
JEDEC
EIAJ
SC-88
5
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
元器件交易网
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
BC847BS;中文规格书,Datasheet资料
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©2007 Fairchild Semiconductor Corporation BC847BS Rev. ABC847BSJune 2007BC847BSNPN Multi-chip General Purpose AmplifierThis device is designed for general purpose amplifier applications at collector currents to 200 mA.Sourced from Process 07.Absolute Maximum Ratings * T a= 25°C unless otherwise noted* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES :1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics * T a= 25°C unless otherwise noted*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.SymbolParameterValueUnitsV CBO Collector-Base Voltage 50V V CES Collector-Base Voltage 50V V CEO Collector-Emitter Voltage 45V V EBO Emitter-Base Voltage 6.0V I C Collector Current (DC)100mA T J, T STGJunction Temperature and Storage Temperature-55 ~ +150°CSymbolCharacteristicMaxUnitsP D Total Device Dissipation Derate above 25℃2101.6mW mW/℃R θJAThermal Resistance, Junction to Ambient625℃/WC1B2E1NOTE: The pinouts are symmetrical; pin 1 and pin4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.Pin #1 B1C2E2 SC70-6Mark: .1FDual NPN Signal TransisterBC847BS Rev. ABC847BSElectrical Characteristics * T a= 25°C unless otherwise notedOff CharacteristicsOn Characteristics* Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤2%NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.SymbolParameter Test Condition MIN MAX UnitsV (BR)CBO Collector-Emitter Breakdown Voltage I C = 10 μA, I E = 050V V (BR)CES Collector-Base Breakdown Voltage I C = 10 μA, I E = 050V V (BR)CEO Collector-Base Breakdown Voltage I C = 10 mA, I B = 045V V (BR)EBO Emitter-Base Breakdown Voltage I E = 10 μA, I C = 06.0V I CBOCollector-Cutoff CurrentV CB = 30 V, I E = 0V CB = 30 V, I E = 0, T A = 150°C155.0nA μAh FE DC Current GainI C = 2.0 mA, V CE = 5.0 V200450V CE(sat )Collector-Emitter Saturation Voltage *I C = 10 mA, I B = 0.5 mAI C = 100 mA, I B = 5.0 mA 0.250.65V V V BE(on )Emitter-Base Breakdown Voltage *I C = 2.0 mA, V CE = 5.0 V I C = 10 mA, V CE = 5.0 V0.580.70.77V VtmFAIRCHILD SEMICONDUCTOR TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.BC847BSDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT Quiet Series™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™μSerDes™ScalarPump™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyBoost™TinyBuck™TinyPWM™TinyPower™TinyLogic ®TINYOPTO™TruTranslation™UHC ®UniFET™VCX™Wire™ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT ®FAST ®FASTr™FPS™FRFET™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Rev. I233BC847BS Rev. A分销商库存信息: FAIRCHILDBC847BS。
BC847 规格书
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Conditions VCB = 30 V; IE = 0 A VCB = 30 V; IE = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 10 A
BC847_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 20 August 2012
Table 2. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain hFE group A hFE group B hFE group C VCE = 5 V; IC = 2 mA Conditions open base Min 110 110 200 420 Typ 180 290 520 Max 45 100 800 220 450 800 Unit V mA
Table 5. BC847 BC847A BC847B BC847C BC847W BC847AW BC847BW BC847CW
[1]
Marking codes Marking code[1] 1H* 1E* 1F* 1G* 1H* 1E* 1F* 1G* Type number BC847T BC847AT BC847BT BC847CT BC847AM BC847BM BC847CM Marking code[1] 1N 1E 1F 1G D4 D5 D6
BC847BV,315;BC847BV,115;中文规格书,Datasheet资料
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Product data sheet2001 Sep 10NPN general purpose double transistorBC847BVFEATURES•300 mW total power dissipation•Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package •Excellent coplanarity due to straight leads •Low collector capacitance•Improved thermal behaviour due to flat leads•Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors •Reduces required board space •Reduces pick and place costs.APPLICATIONS•General purpose switching and amplification.DESCRIPTIONNPN double transistor in a SOT666 plastic package. PNP complement: BC857BV.MARKINGPINNINGTYPE NUMBER MARKING CODEBC847BV1FPIN DESCRIPTION 1, 4emitter TR1; TR22, 5base TR1; TR26, 3collectorTR1; TR2NPN general purpose double transistor BC847BVLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT Per transistorV CBO collector-base voltage open emitter−50VV CEO collector-emitter voltage open base−45VV EBO emitter-base voltage open collector−5VI C collector current (DC)−100mAI CM peak collector current−200mAI BM peak base current−200mAP tot total power dissipation T amb≤ 25 °C; note 1−200mWT stg storage temperature −65+150°CT j junction temperature−150°CT amb operating ambient temperature −65+150°CPer deviceP tot total power dissipation T amb≤ 25 °C; note 1−300mW Note1.Transistor mounted on an FR4 printed-circuit board.THERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNITR th j-a thermal resistance from junction to ambient notes 1 and 2416K/W Notes1.Transistor mounted on an FR4 printed-circuit board.2.The only recommended soldering method is reflow soldering.NPN general purpose double transistorBC847BVCHARACTERISTICST amb = 25 °C; unless otherwise specified.Note1.Pulse test: t p ≤ 300 μs; δ ≤ 0.02.SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNITPer transistor I CBO collector-base cut-off current I E = 0; V CB = 30 V−−15nA I E = 0; V CB = 30 V; T j = 150 °C −−5μA I EBO emitter-base cut-off current I C = 0; V EB = 5 V −−100nAh FE DC current gain I C = 2 mA; V CE = 5 V 200−450V BE base-emitter voltage I C = 2 mA; V CE = 5 V 580655700mV V CEsat collector-emitter saturation voltageI C = 10 mA; I B = 0.5 mA −−100mV I C = 100 mA; I B = 5 mA; note 1−−300mV V BEsat base-emitter saturation voltage I C = 10 mA; I B = 0.5 mA−755−mV C c collector capacitance I E = I e = 0; V CB = 10 V; f = 1 MHz−− 1.5pF C e emitter capacitance I C = i c = 0; V EB = 500 mV;f = 1 MHz −11−pF f T transition frequencyI C = 10 mA; V CE = 5 V; f = 100 MHz 100−−MHzNPN general purpose double transistor BC847BV Graphical information BC847BVNPN general purpose double transistor BC847BV PACKAGE OUTLINENPN general purpose double transistorBC847BVDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DISCLAIMERSGeneral ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties,expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, including those pertaining to warranty, intellectual property rightsinfringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.NXP SemiconductorsCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@© NXP B.V. 2009All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Sep 10Document order number: 9397 750 08589分销商库存信息:NXPBC847BV,315BC847BV,115。
1F帖片三极管BC847BT
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BC847ATT1, BC847BTT1, BC847CTT1General Purpose TransistorsNPN SiliconThese transistors are designed for general purpose amplifier applications. They are housed in the SC−75/SOT−416 package which is designed for low power surface mount applications.Features•Pb−Free Packages are Available*MAXIMUM RATINGS (T= 25°C)Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.THERMAL CHARACTERISTICS1.FR−4 @ min pad.2.FR−4 @ 1.0 × 1.0 in pad.*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.ORDERING INFORMATIONELECTRICAL CHARACTERISTICS (T= 25°C unless otherwise noted)ON CHARACTERISTICSSMALL−SIGNAL CHARACTERISTICS2.00.2Figure 3. Collector Saturation Region I B , BASE CURRENT (mA)Figure 4. Base−Emitter Temperature CoefficientI C , COLLECTOR CURRENT (mA)1.21.62.00.40.8h F E , N O R M A L I Z E D D C C U R R E N T G A I NV C E , C O L L E C T O R −E M I T T E R V O L T A G E (V )1.51.00.80.60.40.3BC847Figure 5. Normalized Thermal Response0.0010.010.11.0r (t ), N O R M A L I Z E D T R A N S I E N T T H E R M A L R E S I S T A N C Et, TIME (s)Figure 6. Capacitances VR , REVERSE VOLTAGE (VOLTS)100.40.6 1.010201.02.06.0407.05.03.02.0C , C A P A C I T A N C E (p F )0.8 4.08.0Figure 7. Current−Gain − Bandwidth ProductI C , COLLECTOR CURRENT (mAdc)80100200300400602040300.71.010202.050307.05.03.00.5f , C U R R E N T −G A I N − B A N D W I D T H P R O D U C T (M H z )TORDERING INFORMATION†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifi-cations Brochure, BRD8011/D.PACKAGE DIMENSIONSSC−75/SOT−416CASE 463−01ISSUE CON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION。
BC847BS 双极性NPN小信号传输器说明说明书
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IC ICM PD
Rating 50 45 6 100 200 300
Unit V V V mA mA
mW
SOT-363
G
•
A H
BC M
Note: 1. Halogen free "Green” products are defined as those which contain <900ppm bromine,
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage Transition Frequency Output Capacitance
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO
B 0.045 0.053 1.15 1.35
C 0.079 0.096 2.00 2.45
D
0.026
071 0.087 1.80 2.20
J ----- 0.004 ----- 0.10
K 0.031 0.043 0.80 1.10
L 0.010 0.018 0.26 0.46
TA=25°C
1000
TA=25°C TA=100°C
BC 847PN资料
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NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain• Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP Transistors in one packageTape loading orientationVPS05604631542EHA07177EHA07193123456W1s Direction of UnreelingTop View Marking on SOT-363 package (for example W1s)corresponds to pin 1 of devicePosition in tape: pin 1opposite of feed hole sideType Marking Pin Configuration PackageBC 847PN 1Ps1=E12=B13=C24=E25=B26=C1SOT-363Maximum Ratings ParameterValue Symbol Unit VCollector-emitter voltage V CEO 45Collector-base voltage 50V CBO Collector-emitter voltage V CES V 50V EBO V Emitter-base voltage 5mA DC collector current I C 100200Peak collector currentI CM Total power dissipation , T S = 115 °C mW P tot 250T j 150Junction temperature °C -65 (150)Storage temperatureT stgThermal Resistance Junction ambient 1)R thJA ≤275K/WJunction - soldering pointR thJS≤1401) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 CuElectrical Characteristics at T A =25°C, unless otherwise specified Parameter Symbol ValuesUnitmin.typ.max.DC Characteristics per Transistor Collector-emitter breakdown voltage I C = 10 mA, I B = 0V-V (BR)CEO-45Collector-base breakdown voltage I C = 10 µA, I B = 0--V (BR)CBO50Collector-emitter breakdown voltage I C = 10 µA, V BE = 0V (BR)CES50V--Emitter-base breakdown voltage I E = 10 µA, I C = 0 --V (BR)EBO5Collector cutoff current V CB = 30 V, I E = 0 15nA -I CBO-µA Collector cutoff current V CB = 30 V, I E = 0 , T A = 150 °C --I CBO5h FE-200 -630 250290DC current gain 1) I C = 10 µA, V CE = 5 V I C = 2 mA, V CE = 5 V-mV300650Collector-emitter saturation voltage1) I C = 10 mA, I B = 0.5 mA I C = 100 mA, I B = 5 mA-- 90200V CEsat Base-emitter saturation voltage 1) I C = 10 mA, I B = 0.5 mA I C = 100 mA, I B = 5 mA 700900V BEsat -- --Base-emitter voltage 1) I C = 2 mA, V CE = 5 V I C = 10 mA, V CE = 5 VV BE(ON) 580- 660- 7508201) Pulse test: t < 300µs; D < 2%Electrical Characteristics at T A=25°C, unless otherwise specifiedParameter Symbol UnitValuesmin.typ.max.AC Characteristics per TransistorTransition frequencyI C = 20 mA, V CE = 5 V, f = 100 MHz--MHz250f T2C cbCollector-base capacitance V CB = 10 V, f = 1 MHz--pFEmitter-base capacitance V EB = 0.5 V, f = 1 MHz-10C eb-Short-circuit input impedance I C = 2 mA, V CE = 5 V, f = 1 kHz4.5kΩ-h11e--Open-circuit reverse voltage transf.ratio I C = 2 mA, V CE = 5 V, f = 1 kHz2-10-4 h12eShort-circuit forward current transf.ratio I C = 2 mA, V CE = 5 V, f = 1 kHz--330-h21eOpen-circuit output admittanceI C = 2 mA, V CE = 5 V, f = 1 kHzh22e-30-µSTotal power dissipation P tot = f (T A*;T S) * Package mounted on epoxymWPtotPermissible Pulse LoadP totmax / P totDC = f (t p)Ptotmax/PtotDCPermissible Pulse Load R thJS= f (t p)1010101010K/WRthJSCollector-base capacitance C CB = f (V CBO )Emitter-base capacitance C EB = f (V EBO )041051010EHP00361CB0C V62EB0V EBC 810pF 12CB0C -11C CB(()BC 846 (850))Transition frequency f T = f (I C )V CE= 5V10101010EHP00363f mAMHz -10125310102110555ΙCCollector cutoff current I CBO = f (T A )V CB = 30V10050100150EHP00381T A51010nA10Ι555101043210-1maxtypC Collector-emitter saturation voltage I C = f (V CEsat ), h FE = 20100EHP00367CEsat10mA1010210-155V 0.30.510025-500.10.20.4CC CDC current gain h FE = f (I C) V CE = 5Vh231010210551015Base-emitter saturation voltageI C = f (V BEsat), h FE = 2010EHP00364BEsatV0.6V 1.2-110010121055mA0.20.40.8C25100C-50Ch parameter h e = f (I C) normalizedV CE= 5V101010EHP00368mA-1015h210-110110100555h11eh12eh21eh22eV CE= 5 VΙCh parameter h e =f (V CE) normalizedI C = 2mA0102030EHP00369VCEhV1.00.51.52.0=2 mAhhhheeee21111222CΙ。
BC847B中文资料
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VBE(ON)
Base-emitter voltage1)
IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V
1Pulse test: t < 300µs; D < 2%
580 -
元器件交易网
BC846...-BC850...
NPN Silicon AF Transistors • For AF input stages and driver applications • High cemitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856...-BC860...(PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101
IE = 0 , IC = 10 µA
-
Collector-base cutoff current
VCB = 45 V, IE = 0 VCB = 30 V, IE = 0 , TA = 150 °C
h FE
0.015 5 140 250 480 180 290 520
220 450 800 mV
DC current gain1)
IC = 10 mA, IB = 0 , BC846... IC = 10 mA, IB = 0 , BC847..., BC850... IC = 10 mA, IB = 0 , BC848..., BC849...
BC847AWT1G;BC847CWT3G;BC847CWT1G;BC848BWT1G;BC848CWT1G;中文规格书,Datasheet资料
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Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
1.2
1.6
2.0
2.4
2.8
0 0.02
0.1
1.0
IB, BASE CURRENT (mA)
10 20
Figure 5. Collector Saturation Region
0.2
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
Features
• AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage
NXP-BC847系列中文资料
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Type number[1]
Marking code[2]
BC847
1H*
BC847A
1E*
BC847B
1F*
BC847B/DG
*BC
BC847C
1G*
BC847W
1H*
BC847AW
1E*
BC847BW
1F*
BC847BW/DG
G9*
BC847CW
1G*
BC847T
1N
[1] /DG: halogen-free
2 of 15
NXP Semiconductors
BC847/BC547 series
45 V, 100 mA NPN general-purpose transistors
Table 3. Pin SOT54 1 2 3
Pinning …continued Description
emitter base collector
BC547C[2]
[1] /DG: halogen-free [2] Also available in SOT54 and SOT54 variant packages (see Section 2 and Section 9).
Version SOT416
SOT883 SOT54
Table 5. Marking codes
SOT54A 1 2 3
emitter base collector
SOT54 variant
1
emitter
2
base
3
collector
BC847B中文资料
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BC847B BC847CSMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAsSILICON EPITAXIAL PLANAR NPN TRANSISTORSsMINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKINGsBC847B - THE PNP COMPLEMENTARY TYPE IS BC857BAPPLICATIONS s WELL SUITABLE FOR PORTABLE EQUIPMENTs SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE®June 2002ABSOLUTE MAXIMUM RATINGS1/4BC847B / BC847CTHERMAL DATAC unless otherwise specified)ELECTRICAL CHARACTERISTICS (T case = 25 oBC847B / BC847CInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics © 2002 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.BC847B / BC847C。
BC847BLD-7;中文规格书,Datasheet资料
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BC847BLD SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGEFeatures• Low Deviation in Base-Emitter Voltage• Surface Mount Package• Ideally Suited for Automated Assembly Processes• Lead Free by Design/RoHS Compliant (Note 1) • "Green" Device (Note 2)• Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT-23• Case material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D• Terminal Connections: See Diagram• Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 • Marking Information: See Page 3• Ordering Information: See Page 3• Weight: 0.008 grams (approximate)SOT-23C123EBSchematic & Pin ConfigurationMaximum Ratings@T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitCollector-Base Voltage V CBO50 VCollector-Emitter Voltage V CEO45 VEmitter-Base Voltage V EBO 6 VOutput Current - Continuous (Note 3) I C200 mAPeak Collector Current I CM200 mAPeak Emitter Current I EM200 mAPower Dissipation (Note 3) P d300 mWPower Deration P der 2.4 mW/°CThermal CharacteristicsCharacteristic Symbol Value UnitThermal Resistance, Junction to Ambient Air (Note 3) RθJA417 °C/W Operating and Storage Junction Temperature Range T j, T STG-55 to +150 °CNotes: 1. No purposefully added lead.2. Diode’s Inc.’s “Green” policy can be found on our website at /products/lead_free/index.php.3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout documentAP02001, which can be found on our website at /datasheets/ap02001.pdf.Please click here to visit our online spice models database.Electrical Characteristics: NPN Transistor @T A = 25°C unless otherwise specifiedCharacteristic SymbolMinTypMaxUnitTest ConditionOFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V (BR)CBO 50 — — V I C = 10μA, I E = 0 Collector-Emitter Breakdown Voltage V (BR)CEO 45 — — V I C = 1.0mA, I B = 0 Emitter-Base Breakdown Voltage V (BR)EBO 6 — — V I E = 10μA, I C = 0 Collector Cutoff Current I CEX — — 15 nA V CE = 50V, V EB(OFF)= 3.0V Base Cutoff Current (I BEX ) I BL — — 15 nA V CE = 40V, V EB(OFF) = 3.0V15 nA V CB = 40V, I E = 0Collector-Base Cut Off Current— — I CBO 5 μA V CB = 30V, T A = 150oCCollector-Emitter Cut Off Current, I O(OFF) I CEO — — 50 nA V CE = 40V, I B = 0 Emitter-Base Cut Off CurrentI EBO— — 50 nA V EB = 5V, I C = 0 ON CHARACTERISTICS (Note 4)180 — — — V CE = 5V, I C = 100μA 150 — — — V CE = 5V, I C = 500μA 220 — — — V CE = 5V, I C = 1mA 220 — — — V CE = 5V, I C = 2mA 150 — — — V CE = 5V, I C = 5mA DC Current Gain h fe150 — — — V CE = 5V, I C = 10mA — 0.09 0.18 V I C = 10mA, I B = 0.5mA Collector-Emitter Saturation Voltage V CE(SAT)— 0.2 0.4 V I C = 100mA, I B = 5mA Base-Emitter Turn-On Voltage V BE(ON) 647 657 667 mV V CE = 5V, I C = 2mA — — 0.8 V I C = 10mA, I B = 0.5mA Base-Emitter Saturation Voltage V BE(SAT)— — 0.9 V I C = 100mA, I B = 5mA SMALL SIGNAL CHARACTERISTICS Output Capacitance C OBO — 3 — pFV CB = 5.0V, f = 1.0 MHz, I E = 0Input Impedanceh ie — 4.5 — K Ω Voltage Feedback Ratio h re — 2 — x 10E-4 Small Signal Current Gain h fe — 200 — —Output Admittanceh oe — 30 — μSV CE = 5.0V, I C = 2mA,f = 1.0KHz Current Gain-Bandwidth Product f T 100 — — MHzV CE = 20V, I C = 10 mA,f = 100 MHzNoise FigureNF— — 10 dBV CE = 5V, I C = 100µA,R S = 1K Ω, f = 1kHzNotes:4. Short duration pulse test used to minimize self-heating effect.P , P O W E R D I S S I P A T I O N (m W )D T , AMBIENT TEMPERATURE (°C)Fig. 1 Maximum Power Dissipation vs.Ambient TemperatureA 0100I , COLLECTOR CURRENT (mA)Fig. 2 Typical h vs. I C FE Ch D C C U R R E N T G A I NF E ,V C O L L E C T O R E M I T T E RS A T U R A T I O N V O L T A G E (V )C E (S A T ),I , COLLECTOR CURRENT (mA)Fig. 4 Typical V vs. I C CE(SAT)C00.2I , C O L L E C T O R C U R R E N T (A )C V , COLLECTOR EMITTER VOLTAGE (V)Fig. 3 Typical I vs. V CE CCE1101001,000V B A S E E M I T T E RS A T U R A T I O N V O L T A G E(V )B E (S A T ),I , COLLECTOR CURRENT (mA)Fig. 6 Typical V vs. IC BE(SAT)C0.11101001,000V B A SE E M I T T E R V O L T A G E (V )B E ,I , COLLECTOR CURRENT (mA)Fig. 5 Typical V vs. I C BE C00.1Ordering Information (Note 5)Device Packaging Shipping BC847BLD-7SOT-233000/Tape & ReelNotes:5. For packaging details, go to our website at /datasheets/ap02007.pdf.Marking InformationKLD = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006M = Month ex: 9 = SeptemberKLDY MDate Code KeyYear 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 CodeT U V WX Y Z ABCMonth Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code123456 789ONDMechanical DetailsSOT-23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11α0° 8° - All Dimensions in mmSuggested Pad LayoutX EYCZDimensions Value (in mm)Z 2.9X 0.8 Y 0.9 C 2.0 E 1.35IMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.分销商库存信息: DIODESBC847BLD-7。
BC847B;中文规格书,Datasheet资料
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BC847B BC847CSMALL SIGNAL NPN TRANSISTORSPRELIMINARY DATAs SILICON EPITAXIAL PLANAR NPNTRANSISTORSs MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKINGsBC847B - THE PNP COMPLEMENTARY TYPE IS BC857BAPPLICATIONS s WELL SUITABLE FOR PORTABLE EQUIPMENTs SMALL LOAD SWITCH TRANSISTORS WITH HIGH GAIN AND LOW SATURATION VOLTAGE®June 2002ABSOLUTE MAXIMUM RATINGS1/4t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s ) -Ob s o l eTHERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)BC847B / BC847CBC847B / BC847COb s o l e t e P r o d uc t (s ) - O b s o l e t e P r od u c t (s ) Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 2002 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.BC847B / BC847CO b s o l e t e P r o d u c t (s ) - O b s o l e t e P r o d u c t (s )分销商库存信息: STMBC847B。
安森美半导体-BC847C-NPN通用SMD三极管-数据表说明书
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Ratings (at TA = 25°C unless otherwise specified)
Symbol
Collector Capacitance at f = 1MHz IE = Ie = 0; VCB = 10V
CC
Transition Frequency at f = 100MHz IC = 10mA; VCE = 5V
Symbol VCES VCEO ICM Ptot Tj
Maximum
Dimensions : Millimetres
BC847C 50 45 200 250 150
Units
V
mA mW °C
Page 1
09/05/08 V1.1
BC847C
General Purpose SMD NPN Transistors
10
Ptot (mW)
250
Device Marking
IG
Part Number BC847C
Unit pF MHz dB
-
-
Page 3
09/05/08 V1.1
BC847C
General Purpose SMD NPN Transistors
Notes:
International Sales Offices:
Package Outline Details
Absolute Maximum Ratings
Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (Open Base) Collector Current (Peak Value) Total Power Dissipation up to Tamb = 25°C Junction Temperature
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nA VCB = 30V
—
5.0
µA VCB = 30V, TA = 150°C
fT
100
—
—
MHz VCE = 5.0V, IC = 10mA,
f = 100MHz
CCBO
—
3.0
—
pF VCB = 10V, f = 1.0MHz
Notes:
1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at /products/lead_free/index.php 3. Device mounted on FR-4 PCB, pad layout as shown on page 3, or Diodes Inc. suggested pad layout document AP02001 on our website at
V(BE)SAT, BASE TO EMITTER SATURATION VOLTAGE (V)
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Base-Emitter Saturation Voltage
vs. Collector Current
VBE(ON), BASE-EMITTER ON VOLTAGE (mV)
VBE(SAT)
— —
700 900
— —
mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA
VBE(ON)
580 —
640 725
700 770
mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA
ICBO
— —
—
15
LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
Solderable per MIL-STD-202, Method 208 • Ordering Information: See Page 3 • Marking Information: See Page 3 • Weight: 0.0009 grams
BOTTOM VIEW
1
C
E3 B2
TOP VIEW (Internal Schematic)
DS30525 Rev. 10 - 2
3 of 3
BC847BLP
© Diodes Incorporated
Voltage vs. Collector Current
TA = -55ºC TA = 25ºC
TA = 85ºC
TA = 150ºC
TA = 125ºC
VCE = 5V
IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Base-Emitter Turn-On Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product Collector-Base Capacitance
Symbol Min
Typ
Max Unit Test Condition
M⎯
⎯ 0.35
N⎯
⎯ 0.40
All Dimensions in mm
Dimensions Z G1 G2 X X1 Y C
Value (in mm) 1.1 0.3 0.2 0.7 0.25 0.4 0.7
Y
G1
Z
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
C X1 X G2
DFN1006-3
Dim Min Max Typ
A 0.95 1.075 1.00
B 0.55 0.675 0.60
C 0.45 0.55 0.50
D 0.20 0.30 0.25
G 0.47 0.53 0.50
H
0 0.05 0.03
K 0.10 0.20 0.15
L 0.20 0.30 0.25
vs. Collector Current
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current
DS30525 Rev. 10 - 2
2 of 3
Symbol PD RθJA
Tj, TSTG
Value 250 500
-55 to +150
Unit mW °C/W °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage
V(CE)SAT, COLLECTOR TO EMITTER SATURATION VOLTAGE (mV)
350 300 250
200
150
100
50
0
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical Collector-Emitter Saturation
DFN1006-3
Maximum Ratings @TA = 25°C unless otherwise specified
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Characteristic
BC847BLP
© Diodes Incorporated
元器件交易网
Ordering Information (Note 5)
Notes:
Device BC847BLP-7
Packaging DFN1006-3
5. For packaging details, go to our website at /datasheets/ap02007.pdf.
Symbol VCBO VCEO VEBO IC
Value 50 45 6.0 100
Unit V V V mA
Thermal Characteristics
Characteristic Power Dissipation (Note 3) @TA = 25°C Thermal Resistance, Junction to Ambient (Note 3) @TA = 25°C Operating and Storage Temperature Range
元器件交易网
BC847BLP
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Complementary PNP Type Available (BC857BLP) • Ultra-Small Leadless Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability
/datasheets/ap02001.pdf. 4. Short duration pulse test used to minimize self-heating effect.