IPD50N06S3-07中文资料

0.6 -
0.9 45 66
50 200 1.3 -
A
V ns nC
Current is limited by bondwire; with an R thJC = 1.1 K/W the chip is able to carry 104 A at 25°C. For detailed information see Application Note ANPS071E. 2) Defined by design. Not subject to production test. 3) Qualified at -5V and +20V. 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
1)
C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=50 A, R G=7 Ω V GS=0 V, V DS=25 V, f =1 MHz
-
7800 1180 1130 30 60 45 73
8970 1770 1700 -
10-3 10-7
single pulse
10-6
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 1.1
page 4
2007-11-07
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IPD50N06S3-07
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
V GS [V]
T j [°C]
Rev. 1.1
page 5
2007-11-07
元器件交易网
IPD50N06S3-07
9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D
4
200
10 V 8V
6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C parameter: V GS
20
6V 7V 8V
175 150 125 15
7.5 V
I D [A]
7V
100 75 50 25 0 0 2 4 6 8 10
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IPD50N06S3-07
OptiMOS®-T Power-Transistor
Product Summary V DS R DS(on),max ID 55 6.9 50 V mΩ A
Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested PG-TO252-3-11
60
40 100
P tot [W]
80 60
I D [A]
20 0 0 50 100 150 200 0 50 100 150 200
40 20 0
T C [°C]
T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz
Ciss
104
Coss
3.5
800µA
3
Crss
V GS(th) [V]
C [pF]
80µA
2.5
103
2
1.5
1 -60 -20 20 60 100 140 180
102 0 5 10 15 20 25
V BR(DSS) [V]
900
E AS [mJ]
55
25 A
600
300
50 A
50
0 0 50 100 150 200
45 -60 -20 20 60 100 140 180
T j [°C]
T j [°C]
15 Typ. gate charge V GS = f(Q gate); I D = 50 A pulsed parameter: V DD
-
1 1 6.2
100 100 6.9 nA mΩ
Rev. 1.1
page 2
2007-11-07
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IPD50N06S3-07
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Reverse recovery charge2)
IPD50N06S3-07
13 Typical avalanche Energy E AS = f(T j) parameter: I D
1500
12.5 A
14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA
65
1200 60
8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 50 A; V GS = 10 V
12
150
10
100
R DS(on) [mΩ ]
0 2 4 6 8 10
I D [A]
8
50
6
0
4 -60 -20 20 60 100 140 180
100
25°C 100°C 150°C
102
I AV [A]
101
175 °C 25 °C
I F [A]
10
100 0 0.2 0.4 0.6 0.8 1 1.2 1.4
1 1 10 100 1000
V SD [V]
t AV [µs]
Rev. 1.1
page 6
2007-11-07
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Type IPD50N06S3-07
Package PG-TO252-3-11
Marking PN0607
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=25 A, Value 50 50 200 710 50 ±20 136 -55 ... +175 55/175/56 mJ A V W °C Unit A
Rev. 1.1
page 1
2007-11-07
元器件交易网
IPD50N06S3-07
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=80 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=50 A 55 2.1 3.0 0.01 4 1 µA V 1.1 62 40 K/W