伯恩半导体 SMB封装 P4200SC规格书

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4200-SCS产品介绍

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半导体材料和器件的研发—传统的半导体和微电子专业器件和工艺的参数监控—半导体工艺线，生产单位
• 器件的建模（Modeling)—半导体器件的设计，集成电路的设计 • 可靠性和寿命测试—半导体器件可靠性研究 • 高功率MOSFET，BJT和III-V族器件（GaN，GaAs)的特性分析 • 纳米器件研究； • 光电子器件的研究（LED，OLED等）； • 非易挥发性存储器测试—Flash闪存，相变存储器（PRAM），铁电存储器（ FeRAM)，阻变存储器（RRAM)等； • 有机半导体特性分析—化学专业涉及较多； • 太阳能电池及光伏电池特性分析
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4200-SCS半导体特性分析系统介绍及销售指导
• • • 4200-SCS系统介绍
4200-SCS产品主要应用领域
• 与4200-SCS系统一起联用的合作产品
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• 4200-SCS/F半导体特性分析系统的前面板具有一个12英寸的超清晰分辨率（ 1024×768）的液晶显示器，具有可刻录的DVD光驱，磁盘驱动器，USB接口，键盘和鼠标。 • 具有工业级，基于GUI的Windows视窗界面，将系统设置集成时间降低到了最小； • 将工业级控制器和另外的RAM集成在一起，确保了高的测试速度，加强了系统的坚固性，稳定性和安全性；2000年年底推向市场，全球第一家将Windows GUI界面和测量仪器有机地结合在仪器
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NXP MIMXRT1020 EVK 板级硬件用户指南说明书

© 2018 NXP B.V.MIMXRT1020 EVK Board Hardware User’sGuide1. IntroductionThis Hardware User’s Guide for the MIMXRT 1020Evaluation Kit (EVK) is based on the NXP Semiconductor i.MX RT1020 Processor. This board is fully supported by NXP Semiconductor. The guide includes system setup and debugging, and provides detailed information on overall design and usage of the EVK board from a hardware systems perspective.1.1. Board overviewThis EVK board is a platform designed to showcase the most commonly used features of the i.MX RT1020 Processor in a small, low cost package. The MIMXRT1020 EVK board is an entry level development board, which gives the developer the option of becoming familiar with the processor before investing a large amount or resources in more specific designs.NXP Semiconductors Document Number: MIMXRT1020EVKHUGUser's GuideRev. 0 , 05/2018Contents1.Introduction ........................................................................ 1 1.1. Board overview ....................................................... 1 1.2. MIMXRT1020 EVK contents ................................. 2 1.3. MIMXRT1020 EVK Board revision history ........... 3 2.Specifications ..................................................................... 3 2.1. i.MX RT1020 processor .......................................... 5 2.2. Boot Mode configurations ....................................... 5 2.3. Power tree ............................................................... 6 2.4. SDRAM memory .................................................... 9 2.5. SD Card slot ............................................................ 9 2.6. QSPI flash ............................................................... 9 2.7. Ethernet connector .................................................. 9 2.8. USB PHY connector ............................................. 10 2.9. Audio input / output connector .............................. 10 2.10. OpenSDA circuit (DAP-Link) ............................... 10 2.11. JTAG connector .................................................... 10 2.12. Arduino expansion port ......................................... 11 2.13. User interface LED indicator ................................ 13 3.PCB information .............................................................. 13 4. EVK design files .............................................................. 13 5. Contents of the Evaluation Kit ......................................... 14 6.Revision history (14)IntroductionFeatures of the MIMXRT1020 EVK board are shown in Table 11.2. MIMXRT1020 EVK contentsThe MIMXRT1020 EVK contains the following items: •MIMXRT1020 EVK Board•USB Cable (Micro B)Specifications 1.3. MIMXRT1020 EVK Board revision history•Rev A: Prototype.2. SpecificationsThis chapter provides detailed information about the electrical design and practical considerations of the EVK Board, and is organized to discuss each block in the following block diagram of the EVK board.( Figure 1)Figure 1. Block diagramThe overview of the MIMXRT1020 EVK Board is shown in Figure 1 & Figure 2.SpecificationsFigure 2. Overview of the MIMXRT1020 EVK Board (Front side)Figure 3. Overview of the MIMXRT1020 EVK Board (Back side)Specifications 2.1. i.MX RT1020 processorThe i.MX RT1020 is a new processor family featuring NXP's advanced implementation of the Arm® Cortex®-M7 Core. It provides high CPU performance and best real-time response. The i.MX RT1020 provides various memory interfaces, including SDRAM, Raw NAND FLASH, NOR FLASH,SD/eMMC, Quad SPI, HyperBus and a wide range of other interfaces for connecting peripherals, such as WLAN, Bluetooth™, GPS. Same as other i.MX processors, i.MX RT1020 also has rich audio features, including SPDIF and I2S audio interface.The i.MX RT1020 applications processor can be used in areas such as industrial HMI, IoT, motor control and home appliances. The architecture's flexibility enables it to be used in a wide variety of other general embedded applications too. The i.MX processor provides all interfaces necessary to connectp eripherals such as WLAN, Bluetooth™, GPS.The more detail information about i.MX RT1020 can be found in the Datasheet and Reference Manual2.2. Boot Mode configurationsThe device has four boot modes (one is reserved for NXP’s use). The boot mode is selected based on the binary value stored in the internal BOOT_MODE register. Switch (SW8-3 & SW8-4) is used to select the boot mode on the MIMXRT1020 EVK Board.Typically, the internal boot is selected for normal boot, which is configured by external BOOT_CFG GPIOs. The following Table 3 shows the typical Boot Mode and Boot Device settings.NOTEFor more information about boot mode configuration, see the System Boot chapter of theMIMXRT1020 Reference Manual. (waiting for update)For more information about MIMXRT1020 EVK boot device selection and configuration, see the main board schematic. (waiting for update)Specifications2.3. Power treeA DC 5 V external power supply is used to supply the MIMXRT1020 EVK Board at J2, and a slide switch SW1 is used to turn the Power ON/OFF. J23 and J9 also can be used to supply the EVK Board. Different power supply need to configure different Jumper setting of J1. Table 4 shows the details:NOTEFor some computers’ USB, it cannot support 500ma before establishingcommunication. In this case, it is recommended to replace the computer oruse the power adapter(J2) to power the EVK Board.The power tree is shown in Figure 4SpecificationsFigure 4. Power TreeThe power control logic of the MIMXRT1020 EVK board is shown in the Figure 5: •It will power up SNVS, and then PMIC_REQ_ON will be switched on to enable external DC/DC to power up other power domains.•ON/OFF button is used to switch ON/OFF PMIC_REQ_ON to control power modes.•RESET button and WDOG output are used to reset the system power.SpecificationsFigure 5. Power Control Diagram The power rails on the board are shown in Table 5.Specifications2.4. SDRAM memoryOne 256 Mb, 166MHz SDRAM (MT48LC16M16A2P) is used on the EVK Board.2.5. SD Card slotThere is a SD card slot(J15) on the MIMXRT1020 EVK Board. J15 is the Micro SD slot for USDHC1 interface. If the developer wants to boot from the SD Card, the boot device switch (SW8) settings should be: OFF, ON, ON, OFF, as shown in Table 3.2.6. QSPI flashA 64 Mbit QSPI Flash is used on the MIMXRT1020 EVK Board. If the developer wants to boot from the QSPI Flash, the boot device switch(SW8) settings should be: OFF, OFF, ON, OFF, as shown in Table 3.2.7. Ethernet connectorThere is one Ethernet Mac controller in the MIMXRT1020 processor. The Ethernet subsystem of the MIMXRT1020 EVK Board is provided by the KSZ8081RNB 10/100M Ethernet Transceiver (U11) and a RJ45 (J14) with integrated Magnetic.Figure 6. Ethernet Connector RJ45Specifications2.8. USB PHY connectorThe MIMXRT1020 contains a integrated USB 2.0 PHYs capable of connecting to USB host/device systems at the USB low-speed (LS) rate of 1.5 Mbits/s, full-speed (FS) rate of 12 Mbits/s or at the USB 2.0 high-speed (HS) rate of 480 Mbits/s.2.9. Audio input / output connectorThe Audio CODEC used on the MIMXRT1020 EVK Board is Wolfson’s Low Power, high quality Stereo Codec, WM8960.The MIMXRT1020 EVK Board include one headphone interface (J11), one onboard MIC (P1), two speaker interfaces (J12, J13). J11 is a 3.5 mm audio stereo headphone jack, which supports jack detect.2.10. OpenSDA circuit (DAP-Link)The OpenSDA circuit (CMSIS–DAP) is an open-standard serial and debug adapter. It bridges serial and debug communications between a USB host and an embedded target processor.CMSIS-DAP features a mass storage device (MSD) bootloader, which provides a quick and easy mechanism for loading different CMSIS-DAP Applications such as flash programmers, run-control debug interfaces, serial-to-USB converters, and more. Two or more CMSIS-DAP applications can run simultaneously. For example, run-control debug application and serial-to-USB converter runs in parallel to provide a virtual COM communication interface while allowing code debugging via CMSIS-DAP with just single USB connection.For the MIMXRT1020 EVK Board, J23 is the connector between the USB host and the target processor. Jumper to serial downloader mode to use stable DAP-Link debugger function. If developer wants to make OpenSDA going to the bootloader mode, and press SW5 when power on. Meanwhile, the OpenSDA supports drag/drop feature for U-Disk. First, use the seral downloader mode and drag/drop the image file to U-Disk. Then select QSPI Flash as boot device and reset the Board, the image will run.2.11. JTAG connectorJ16 is a standard 20-pin/2.54 mm Box Header Connector for JTAG. The pin definitions are shown in Figure 7. Support SWD by default.SpecificationsFigure 7. JTAG pin definitions2.12. Arduino expansion portJ17 – J20 (unpopulated) is defined as Arduino Interface. The pin definitions of Arduino Interface are shown in Table 6.Specifications2.12.1. Power switchSW1 is a slide switch to control the power of the MIMXRT1020 EVK Board when the power supply is from J2. The function of this switch is listed below:•Sliding the switch to the ON position connects the 5 V power supply to the Evaluation board main power system.•Sliding the switch to OFF position immediately removes all power from the board.2.12.2. ON/OFF buttonSW2 is the ON/OFF button for MIMXRT1020 EVK Board. A short pressing in OFF mode causes the internal power management state machine to change state to ON. In ON mode, a short pressing generates an interrupt (intended to be a software-controllable(power-down). An approximate 5 seconds or more pressing causes a forced OFF. Both boot mode inputs can be disconnected.2.12.3. Reset buttonThere are two Reset Button on the EVK Board. SW5 is the Power Reset Button. Pressing the SW5 in the Power On state will force to reset the system power except SNVS domain. The Processor will be immediately turn off and reinitiate a boot cycle from the Processor Power Off state. SW3 is POR Reset Button.EVK design files 2.12.4. USER buttonSW4 is the USER Button(GPIO5-00) for developers using. Pressing can produce changes in high and low levels.2.13. User interface LED indicatorThere are four LED status indicators located on the EVK Board. The functions of these LEDs include: •Main Power Supply(D3)Green: DC 5V main supply is normal.Red: J2 input voltage is over 5.6V.Off: the board is not powered.•Reset RED LED(D15)•OpenSDA LED(D16)•USER LED(D5)3. PCB informationThe MIMXRT1020 EVK Board is made using standard 2-layer technology. The material used was FR-4. The PCB stack-up information is shown in Table 7.4. EVK design filesThe schematics, layout files, and gerber files (including Silkscreen) can be downloaded from/MIMXRT1020-EVK(waiting for update).Revision history5. Contents of the Evaluation KitNOTEPower adaptor, Micro SD Card are not standard parts of the Evaluation Kit.6. Revision historyTable 9 summarizes the changes made to this document since the initial release.Document Number: MIMXRT1020EVKHUGRev. 0 05/2018How to Reach Us: Home Page: Web Support: /supportInformation in this document is provided solely to enable system and softwareimplementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein.NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequenti al or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals”, must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: /SalesTermsandConditions . While NXP has implemented advanced security features, all products may be subject to unidentified vulnerabilities. Customers are responsible for the design and operation of their applications and products to reduce the effect of these vulnerabilities oncustomer’s applications and products, and NXP accepts no liability for any vulne rability that is discovered. Customers should implement appropriate design and operating safeguards to minimize the risks associated with their applications and products NXP, the NXP logo, NXP SECURE CONNECTIONS FOR A SMARTER WORLD, , Freescale, the Freescale logo, and Kinetis, are trademarks of NXP B.V. All other product or service names are the property of their respective owners. Arm and Cortex are registered trademarks of Arm Limited (or its subsidiaries) in the EU and/or elsewhere. All rights reserved. © 2018 NXP B.V.。

P6SMB-Series规格书

MECHANICAL DATACase: SMB (DO-214AA)Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial gradeBase P/N-M3 - halogen-free, RoHS-compliant, commercial gradeBase P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified(“_X” denotes revision code e.g. A, B, ..... and only available for 250 V to 540 V type)Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker testPolarity: for uni-directional types the band denotes cathode end, no marking on bi-directional typesNotes(1) Non-repetitive current pulse, per fig. 3 and derated above T A= 25 °C per fig. 2 (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminalFEATURES• Low profile package• Ideal for automated placement • Glass passivated chip junction• Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %• Excellent clamping capability • Very fast response time• Low incremental surge resistance• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C• AEC-Q101 qualified available- Automotive ordering code: base P/NHE3 or P/NHM3(1) Pulse test: t p 50 ms(2) Surge current waveform per fig. 3 and derate per fig. 2(3) For bi-directional types with V WM of 10 V and less, the I D limit is doubled(4) All terms and symbols are consistent with ANSI/IEEE CA62.35(5) V F = 3.5 V at I F = 50 A (uni-directional only)RATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)1001011007550250.10.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms0 25 50 75 100125 150 175 200t d - Pulse Width (s) TJ - Initial Temperature (°C) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction TemperatureFig. 3 - Pulse Waveform Fig. 5 - Typical Transient Thermal Impedance Fig. 4 - Typical Junction Capacitance Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current PPPM-PeakPulsePower(kW)PeakPulsePower(PPP)orCurrent(IPP)DeratinginPercentage,%。

iTEMP TMT72温度传感器操作手册说明书

Products Solutions Services操作手册iTEMP TMT72温度变送器BA01854T/28/ZH/04.20715255132020-10-20自下列版本起生效01.01（版本号）iTEMP TMT72目录Endress+Hauser 3目录1文档信息 (4)1.1文档功能 (4)1.2安全指南（XA） (4)1.3信息图标 (4)1.4工具图标 (5)1.5文档资料代号 (6)1.6注册商标 (6)2基本安全指南 (7)2.1人员要求 (7)2.2预定用途 (7)2.3操作安全 (7)3到货验收和产品标识 (8)3.1到货验收 (8)3.2产品标识 (8)3.3供货清单 (9)3.4证书和认证 (10)3.5运输和储存 (10)4安装 (11)4.1安装条件 (11)4.2安装 (11)4.3安装后检查 (16)5电气连接 (17)5.1接线 (17)5.2快速接线指南 (18)5.3连接传感器电缆 (18)5.4连接变送器 (19)5.5特殊接线指南 (20)5.6连接后检查 (21)6操作方式 (22)6.1操作方式概览 (22)6.2操作菜单的结构和功能 (25)6.3通过调试软件访问操作菜单 (27)6.4通过SmartBlue App 访问操作菜单 (29)7系统集成 (31)7.1设备描述文件概述 (31)7.2HART 通信的测量变量 (31)7.3支持的HART ®命令 (31)8调试 (34)8.1安装后检查 (34)8.2打开变送器 (34)8.3设置测量设备 (34)8.4写保护设置，防止未经授权的访问 (36)9诊断和故障排除...................379.1常规故障排除........................379.2现场显示单元上的诊断信息..............399.3通过通信接口查看诊断信息..............399.4诊断信息列表........................399.5事件日志............................409.6诊断事件概览........................409.7固件变更历史........................4110维护..............................4211维修..............................4211.1概述...............................4211.2备件...............................4211.3返厂...............................4211.4废弃...............................4212附件..............................4212.1设备专用附件........................4312.2通信专用附件........................4312.3服务专用附件........................4312.4系统组件............................4413技术参数..........................4513.1输入...............................4513.2输出...............................4613.3电源...............................4713.4性能参数............................4813.5环境条件............................5513.6机械结构............................5613.7证书和认证..........................5913.8补充文档资料........................6114操作菜单和菜单参数说明...........6214.1Diagnostics：诊断菜单.................6614.2Application：应用菜单.................7214.3System：系统菜单....................82索引.. (97)文档信息iTEMP TMT724Endress+Hauser1 文档信息1.1 文档功能文档中包含仪表生命周期各个阶段内所需的所有信息：从产品标识、到货验收和储存，至安装、电气连接、操作和调试，以及故障排除、维护和废弃。

伯恩半导体 SMB封装 P3100SB 规格书

Page 1 of 4Features◆ Bi-directional crowbar transient voltage protection ◆ High surge capability ◆ High off-state impedance ◆ Low leakage current ◆ Low on-state voltage ◆ Short-circuit failure modeDO-214AA(SMB)Main ApplicationELA ’s thyristor surge protector devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lighning ,power contact,and power induction. These devices enable equipment to comply with various regulatory requirements including GR 1089,ITU K.20,K.21and K.45,IEC 60950,UL 60950,and TIA-968-A(formerly known as FCC Part 68).Typical application including:● Central office switching equipment. Analog and digital linecards(xDSL,T1/E1,ISDN……)● Customer Premises Equipment(CPE)such as phones, fax machines,modems,POSterminals, PBX systems and caller ID adjunct boxes. ● Primary protection modules including Main Distribution Frames(M DF),building entrance equipment and station protection modules.● Access network equipment such as remoteterminals,line repeaters,multiplexers,cross-connects,WAN equipment,Network Int erface Devices(NID).● Data lines and security systems.● CATV line amplifiers and power inserters. ● Sprinkler systems.Electrcal Parameters (Tamb=25℃)Part NumberV DRMI DRMV BOI BOV TI TC O`I H Min.Max.Max.Max.Max.Max.Max.Min.VuAVmAVApFmABEP 3100SB275535080042.245150Eletrical CharacteristicsV DRMS t a nd -o ff v o l tag e,is m ea sur ed a t ID RM I HHolding current.V BOB r e a ko v e r v o l tag e,is m ea sur ed a t 100V/μs. I BOBreadover current.C OOff-state capacitance ismeasured in V DC =2V@1M HZ .I TON-state currentPage 2 of 4I DRM Leakage current,is measured at VDRM.V T On-state voltage.Part Numbering SystemBEP 3100SB(A)(B)(C)(D)(A) SH’s Semiconductor Surge Arrester(B) Series:0080,0300…3500,3800,4200etc. (C) Pake:SMB(DO-214AA)(D) Rating Sure V oltage:B:4KV(10/700μs )Electrical Characteristics CurvesFigure1 V-I CharacteristicsFigure2 tr x td Pulse Wave-formFigure 3 Normalized V S Change versus Figure 4 Normalized DC Holding Current Junction TemperatureBEP 3100SBThermal ConsiderationsPackage DO-214AA/SMBSymbolParameterValueUnitT J Operating Junction Temperature -40 to +150℃T S Storage Temperature Range -40 to +150℃R θJAJunction to Ambient on printed circuit90℃/WSolder Reflow Recommendations●Recommended reflow methods: IR, vapor phase oven, hot air oven, wave solder. ●The device can be exposed to a maximumtemperature of 265°C for 10 seconds. ●Devices can be cleaned using standard industry methods and solvents.Notes: If reflow temperatures exceed therecommended profile, devices may not meet the performance requirements.DimensionInches Millimeters M IN M AX M INM AX A 0.134 0.155 3.40 3.94 B 0.205 0.22 5.21 5.59 C 0.075 0.083 1.90 2.11 D 0.166 0.185 4.22 4.70 E 0.036 0.056 0.91 1.42 F0.073 0.087 1.85 2.2 G 0.002 0.008 0.05 0.20 H 0.077 0.094 1.95 2.40 J0.043 0.053 1.09 1.35 K 0.008 0.014 0.20 0.35 L0.0390.0490.991.24BEP 3100SBProduct Dimensions.079 (2.0)。

伯恩半导体 SMB封装 P3500SC 规格书

Features◆ Bi-directional crowbar transient voltage protection ◆ High surge capability ◆ High off-state impedance ◆ Low leakage current ◆ Low on-state voltage ◆ Short-circuit failure modeDO-214AA(SMB)Main ApplicationBORN’s thyristor surge protector devices are degsn ied to help protect sensitive telecommunication equipment from the hazards caused by lighning ,power contact,and power induction. These devices enable equipment to comply with various regulatory requirements including GR 1089,ITU K.20,K.21and K.45,IEC 60950,UL 60950,and TIA-968-A(formerly known as FCC Part 68).Typical application including:● Central office switching equipment. Analog and digital linecards(xDSL,T1/E1,ISDN……)● Customer Premises Equipment(CPE)such as phones, fax machines,modems,POS terminals, PBXsystems and caller ID adjunct boxes.● Primary protection modules including Main Distribution Frames(M DF),building entranceequipment and station protection modules.● Access network equipment such as remote terminals,line repeaters,multiplexers,cross-connects,WAN equipment,Network Int erface Devices(NID). ● Data lines and security systems.● CATV line amplifiers and power inserters. ● Sprinkler systems.Electrcal Parameters (Tamb=25℃)Part NumberV DRMI DRMV BOI BOV TI TC O`I H Min.Max.Max.Max.Max.Max.Max.Min.VuAVmAVApFmA BEP 3500SC320540080042.265150Eletrical CharacteristicsV DRMS t a nd -o ff v o l tag e,is m ea sur ed a t ID RM I HHolding current.V BOB r e a ko v e r v o l tag e,is m ea sur ed a t 100V/μs. I BOBreadover current.C OOff-state capacitance ismeasured in V DC =2V@1M HZ .I TON-state currentI DRM Leakage current,is measured at VDRM.V TOn-state voltage.Part Numbering SystemBEP 3500SCBEP 3500SC(A)(B)(C)(D)(A) SH’s Semiconductor Surge Arrester(B) Series:0080,0300…3500,3800,4200etc. (C) Pake:SMB(DO-214AA)(D) Rating Sure V oltage:C:6KV(10/700μs )Electrical Characteristics CurvesFigure1 V-I CharacteristicsFigure2 tr x td Pulse Wave-formFigure 3 Normalized V S Change versus Figure 4 Normalized DC Holding Current Junction TemperatureBEP 3500SCThermal ConsiderationsPackage DO-214AA/SMBSymbolParameterValueUnitT JOperating Junction Temperature -40 to +150℃T S Storage Temperature Range -40 to +150℃R θJAJunction to Ambient on printed circuit90℃/WBEP 3500SCDimensionInches Millimeters M IN M AX M INM AX A 0.134 0.155 3.40 3.94 B 0.205 0.22 5.21 5.59 C 0.075 0.083 1.90 2.11 D 0.166 0.185 4.22 4.70 E 0.036 0.056 0.91 1.42 F0.073 0.087 1.85 2.2 G 0.002 0.008 0.05 0.20 H 0.077 0.094 1.95 2.40 J0.043 0.053 1.09 1.35 K 0.008 0.014 0.20 0.35 L0.0390.0490.991.24Solder Reflow Recommendations●Recommended reflow methods: IR, vapor phase oven, hot air oven, wave solder. ●The device can be exposed to a maximumtemperature of 265°C for 10 seconds. ●Devices can be cleaned using standard industry methods and solvents.Notes: If reflow temperatures exceed therecommended profile, devices may not meet the performance requirements.Product Dimensions.079 (2.0)。

SEMIF20-0706E

SEMI SPECIFICATIONSEMI F20-0706E 规格应用于半导体制造业GP系统,HP系统及UHP 系统元件的SS316L棒料,锻件,挤压件,板材及管道的化学组成及加工规范目录目录 (1)1目的 (2)2应用范围 (2)3参考标准及文件 (2)3.1ASTM标准 (2)4相关术语 (2)4.1定义 (2)5定购信息 (3)6要求 (3)6.1一般要求 (3)6.2制造要求 (3)6.3化学组成要求 (3)6.4冶金学要求 (4)7认证信息 (4)8产品标识 (5)附录1硫对316L不锈钢钨极气体保护电弧(GTA)焊接的影响 (6)A1-1硫对材料加工的影响 (6)A1-2硫对焊接的影响 (6)附录2 铜对316L不锈钢钨极气体保护电弧(GTA)焊接的影响 (8)A2-1不锈钢中的铜元素 (8)A2-2铜对焊接的影响 (8)附录3晶粒度对UHP级组件性能的影响 (10)A3-1相关背景 (10)A3-2影响晶粒度的因素 (10)A3-3晶粒度对组件加工的影响 (10)A3-4晶粒度对组件安装的影响 (11)A3-5总结 (11)1目的规范冶金工业加工并规定用于半导体组件制造的316L不锈钢的化学组成,以得到满足通用,高纯度应用,超高纯度应用的化学分配系统.2应用范围2.1 在该规格中规定了316L不锈钢棒料,锻件的加工要求, ASTM A276规定了挤压材料的加工要求.ASTM A240中规定了板材的加工要求,ASTM A 269和ASTM A632中规定了管件的加工要求,这些加工材料均用于半导体组件制造, 满足通用,高纯度,超高纯度的不同应用.注: 该标准中的规定并不包含安全事项,若有需求,可根据实际应用来规定.该标准的用户有责任制定相关的安全操作规范控制实际操作.3参考标准及文件3.1 ASTM标准A182/A 182M---有关为满足高温应用需求,对锻造或轧制后的合金钢管,锻件,阀门和零件的加工规定.A 240/A 240M---有关压力型管道制造中, 对耐热铬和铬-镍合金不锈钢板材,棒料,带材的加工规定.A262---有关奥氏体不锈钢中晶间碰撞的灵敏度测试的规定.A269---有关为满足通用,对奥氏体不锈钢管材无裂缝焊接的标准.A276---有关耐热不锈钢棒料和管材的加工规定A479/A 479M---有关用于锅炉和其它压力管道制造的耐热不锈钢棒料和管材的加工规定.A480/A 480M---有关为满足通用, 对平轧后的耐热不锈钢板材,带材的加工规定.A484/A 484M---有关为满足通用, 对耐热不锈钢锻件产品的加工规定.A632---有关为满足通用,对奥氏体不锈钢管材(小尺寸)无裂缝焊接的加工规定.A751---有关钢产品化学分析的测试方法,实际操作和相关术语.E45----有关确定钢材化合物组成的建议及操作.E112---有关确定平均晶粒度的测试方法.注: 除非有其他规定, 该规格中引用的所有文件都是最新版本.4相关术语4.1定义4.1.1 内含物---金属内原有的或者外来的物质, 一般认为非金属化合物如氧化物,硫化物或硅酸盐. 4.1.2 等级4.1.2.1 通用级-(GP)—组件用于半导体制造业中无需严谨的清洗要求的化学分配系统,.如干燥剂和真空清洗线.4.1.2.2 高纯度级(HP)—组件用于半导体制造业中需高性能的化学分配系统.4.1.2.3 超高纯度级(UHP)--组件用于半导体制造业中高级的化学分配系统,要求在关键的加工中化合物具有最优的耐腐蚀性.5定购信息5.1 该规格中要求的棒材,锻件,挤压材料,板料或管状的产品,其定购信息应该包括:5.1.1 级别—GP, HP, UHP5.1.2 相关量词---重量(Kg, Lb),尺寸(m, inch, feet)等.5.1.3 横截面说明---圆,方,六角等或详细的图纸说明.5.1.4 尺寸(形式尺寸,无需在图纸中定义)5.1.5壁厚(针对管道)5.1.6长度(规定或随机)5.1.7参考该规格编号和其他信息.5.1.8 任何特别的或需提供的要求.i.e.熔融加工和精炼加工.6要求6.1一般要求6.1.1该规格中要求的棒材,锻件,挤压材料,板料或管状的配料要与材料ASTM A 182/A182M, ASTMA 276, ASTM A 479/A479M, 或ASTM A 484/A 484M 和该规格中的其他要求一致.6.1.2 该规格中提供的板料要与文件ASTM A 240 或A 480/A 480M和该规定中的其他要求一致. 6.1.3 该规格中提供的管材要与文件ASTM A 269 或A632和该规定中的其他要求一致.6.1.4 针对该规格中的要求与参考文件中的要求存在冲突的地方,以该规格中的要求为准.6.2制造要求6.2.1 用于生产的不锈钢坯料,其加工过程如熔融,铸造和精炼等要满足该规格中化学组成要求,并按冶金工业加工要求去操作.6.2.2 为达到晶粒度要求(参考6.4.1)其退火温度应为Min.982℃6.3化学组成要求6.3.1在文件ASTM A 182/A 182M, ASTM A 240, ASTM A269, ASTM A 276,ASTM A 479/A 479M, 或ASTM A 632的表格1中规定加工材料为316L不锈钢,.(除非这里有其他规定).6.3.2 GP级材料在文件ASTM A269和ASTM A632中有相关的化学组成规定,并且对硫(S)含量限制为max.0.012%6.3.3对其他HP和UHP级材料,其化学成分规定可参考如下表1表1 其他材料的化学组成注:#1表示可通过供应商和客户协商确定一个较高的铜含量.6.3.4 材料中硫含量对其焊接有重要的影响,参考附录1中分析.6.3.5 材料中铜含量对焊接的影响可参考附录2.6.3.6 在ASTM文件和该规格中对材料化学组成从最小值到最大值的规定没有得到采购商的同意不能有误差.6.4冶金学要求6.4.1 ASTM E112中规定,对于热加工或冷加工的产品及形式尺寸要求3inches或更小的管材,其晶粒度为5或更好,而对于大于3inches的材料,其晶粒度为3或更好.供应商和客户可通过协商来变更这些要求.对于平板和方料的晶粒度必须通过供应商和客户的协商得到确认.6.4.2 根据ASTM E45 Method A,材料的夹杂物成分由该批材料具有代表性的样品来决定,其额定值参考Plate III.在钢坯料阶段,最大允许的JK夹杂物额定值如下表2所示.表2 不同材料物JK夹杂物额定值6.4.3 材料要通过ASTM A 262 Practice E中规定的晶间腐蚀能力测试.7认证信息7.1 在出货时要提供一份经过确认的材料测试报告复本.该材料测试报告要包括以下几点:7.1.1 根据ASTM A751制作材料化学组成分析,包括该规格中要求的所有元素.7.1.2晶粒度7.1.3 夹杂物中JK值.7.1.4 机械性能.8产品标识8.1标识包含信息:8.1.1 制造商名称,8.1.2 采购商名称和定单号;8.1.3 ASTM 规格文件编号.8.1.4 该规格文件编号.8.1.5 热指数等8.1.6 材料类型(如,316L)附录1硫对316L不锈钢钨极气体保护电弧(GTA)焊接的影响注:该附录中所引用的材料是SEMI F20的专用零件,已完全通过确认.A1-1硫对材料加工的影响A1-1.1 AISI 型316L奥氏体不锈钢是用于半导体设备制造业中气体供应系统组件制造的优质材料.在文件ASTM A 182/A 182M, ASTM A 240, ASTM A269, ASTM A 276,ASTM A 479/A 479M, 或ASTM A 632中表1规定316L的组成成分硫含量Max.0.030%;然而当硫含量大于0.03%时,对316L不锈钢加工及应用有影响的一些性能会发生很大的变化.因此在SEMI F20 中6.3.2及6.3.3的表I 规定了一个较低的硫含量最大值.A1-1.2 硫在奥氏体不锈钢中不易溶解.因此在这些合金中以硫化锰的状态存在,硫化锰跟铬及涉及到的其他元素一样具有可溶性. 这些夹杂物会导致电解抛光后表面产生麻点和其他不良外观,这些不良外观会随着硫含量的增加而增加.A1-1.3 硫化锰能提高不锈钢的加工能力;用于加工的材料其化学组成中硫含量要在Max0.03%左右,硫含量很低的材料在加工过程中要求较少的进给量及速度,这样会缩短刀具的寿命.A1-1.4 硫对焊接也有重要的影响;在约一到两个相似的焊接参数控制下,对硫取从低到允许的最大值的不同值都会增加焊缝深度.A1-1.5在表A1-1中总结了硫对材料加工的影响.A 1-2硫对焊接的影响A1-2.1对不同硫含量的材料进行焊接得到以下结果:A1-2.1.1随硫含量减少,要达到满焊道需输入的热量会增加.A1-2.1.2硫含量减少到低于0.005%,焊接熔池的活动会发生变化,使熔池变得更宽,更浅.表A1-1硫含量对不锈钢加工的影响A1-2.1.3 上表中后面的影响主要是由于对硫含量约0.005%的材料焊接时,在焊接熔池中产生反向的对流电流引起.当硫含量>0.005%时,对流电流沿弧线向下流动,产生如图A1-1所示很深的熔池,而当硫含量<0.005%时,对流电流沿弧线向外流动,产生如图A1-2所示更宽更浅的熔池.A1-2.1.4 当需焊接的两块不锈钢材料的硫含量明显不同时,就会发生严重的问题,造成焊接熔池不对称,偏向低硫含量那端,并且焊缝根部会偏离接合处,如图A1-3所示.A1-2.1.5 为使硫含量对焊接产生的影响最小化,要将需焊接的组件中硫含量控制在+/-0.007%.对于硫含量差异更大的焊接件,要求更为细致的焊接设置以确保焊接深度到达接合处底部.A1-1.1.6针对这些影响,有以下建议以确保焊接时得到最佳的焊接质量.A1-2.1.6.1 审核被焊接件的化学组成.确保硫含量在+/-0.007%之内.A1-2.1.6.2 针对低硫含量(约<0.003%)的焊接件,可能要求对焊接进行适当的设置.另外建议对壁厚>0.100inch的产品要限制其硫含量>0.003%.A1-2.1.6.3 对将焊接的材料进行焊接设置,无论何时改变材料批次都得重审焊接设置.附录2 铜对316L不锈钢钨极气体保护电弧(GTA)焊接的影响注:该附录中所引用的材料是SEMI F20的专用零件,已完全通过确认.A2-1不锈钢中的铜元素A2-1.1铜作为一种残留物或规定范围外的元素存在AISI 316L中,并不是一种意料之外的新增元素,而是属于加工时炉内加料的组成部分,为了达到所期望的材料化学组成,这些炉内加料是主要的最终报废料.在AMS 25248E文件中规定像铜这样的规定范围之外的化学元素最多可含0.50%.铜含量只能通过熔融时减少.如果加工时间过长,更多的报废成分会被循环利用,而残留在AIAI 316L中的铜含量也会增加.A2-1.1 铜是一种奥氏体稳定剂,也能提高奥氏体不锈钢对氯化物溶解液的耐腐蚀性.A2-2铜对焊接的影响A2-2.1 在焊接方面,铜是一种表面活性元素,就如S,O和Se一样,它会影响焊缝弯曲量.像锰元素,在焊接过程中会挥发,再沉积沿着焊缝往下流,它的存在会降低材料的耐腐蚀性,是造成被腐蚀的因素.一些终端用户会因铜作为焊接污物或材料被腐蚀的潜在来源而限制其含量.A2-2.2在晶片形成过程,铜含量的增加和焊缝弯曲量之间存在着相关性,对5个0.25 in.的管道进行评估, 铜在其中一个含0.47%铜,0.011%硫的材料HAZ中起主要作用,对该材料焊接时出现焊缝弯曲现象.对另一个含相同硫量, 而铜只含0.03%的材料焊接时并不会出现焊缝弯曲,对含铜0.31%,硫0.010%的材料焊接后会出现氧化层.所有的焊接都是在氩气中进行.A2-2.3 对28个从0.25到2.0in不同尺寸,铜含量0.05%到0.41%的管道进行研究测试,其中10个铜含量>0.25%,9个尺寸为 2.0 in.,铜含量都>0.22%,4个铜含量>0.25%,焊接后出现外观不良的材料中:0.26%Cu,0.005%S; 0.28%Cu,0.009%S;和0.41%Cu,0.005%S.相反,外观可接受的材料中:0.3%Cu, 0.011%S.所有的焊接都是在氩气中进行.A2-2.4 两个关于AISI 316L管道,2.5in.尺寸,铜含量>0.3%的例子说明了增加氢气与氩气一起作屏蔽气体明显会影响焊接能力(见图A2-1).而当铜含量<0.3%时,并不会出现相同的效果.另外,当焊接含铜>0.3%用Ar/H2 作屏蔽气体的管件时,焊接电极会降级.(见图A2-2)A2-2.5基于以上信息,得出以下结论:A2-2.5.1 针对铜对焊料可焊接能力的影响,目前在SEMI F20中对铜含量限制在0.30%.A2-2.5.2铜和硫含量对焊接的影响出现反差,当硫含量<0.010%时,铜对焊接的影响更明显.A2-2.5.3 直径2.0in.的商业实用型管道都要求残留铜的含量>0.2%.A2-2.5.4 Cohen数据显示对含0.31%铜,0.010%硫的材料在氩气中焊接之后会发生氧化反应;Collins数据则显示了一个可行的焊接操作条件,即氩气中,含0.30%铜,0.011%硫的材料.A2-2.5.5研究发现,当铜含量为0.41%和0.47%时,焊接后出现外观不良,焊缝弯曲,在HAZ中有铜沉积. A2-2.5.6 铜含量>0.30%时在氩气中焊接会得到很好的效果,但可能会呈现出焊缝弯曲,电极在Ar/H2会发生碰撞以下两个图(图略)的注释:图A: 2.5in.的管道,铜含量0.37%.当H2作屏蔽气体时,会出现很明显的焊缝弯曲.图BA: 2.5in.的管道,铜含量0.34%..当H2作屏蔽气体时,会出现很明显的焊缝弯曲,而且越来越明显. A2-2.5.7 以下是焊接2.5in.的管道,铜含量0.34%,屏蔽气体Ar/H2之后焊接电极的电子显微照片(图略)附录3晶粒度对UHP级组件性能的影响注:该附录中所引用的材料是SEMI F20的专用零件,已完全通过确认.A3-1相关背景A3-1.1 在半导体制造业中,用于316不锈钢组件生产的原材料其晶粒度会影响组件的生产,如电解抛光,因此晶粒度对于用户来说是一个重要的因素,最初,在SEMI F20中列出特殊的晶粒度要求,该标准覆盖了一系列的原材料尺寸,型号,成品的应用范围及满足加工要求的其他特殊应用,最新版本的SEMI F20中保留了原有的特殊的晶粒度要求并将其作为供应商和用户之间协商的条目.该附录的目的旨在提供一份有关晶粒度对原材料性能和生产加工影响的相关资料.A3-2影响晶粒度的因素A3-2.1 晶粒形成A3-2.1.1 一个晶粒被指定为原子微观检晶区.最初晶粒度是在铸造阶段,熔融金属固化时形成.通常经过快速冷却表面使铸件固化后,其表面能比其内部形成更好的晶体结构,固化后,不经过热轧或锻造等变形工艺,晶粒会随着时间的延长,温度的增加而增长.A3-2.2钢加工参数对晶粒度增长和精炼的影响A3-2.2.1 半导体组件生产过程中,主要的大铸件必须加工到所需求的较小尺寸及形状,可以通过对铸件再加热,进行滚轧,锻造及挤压等热加工来得到所需尺寸, 这个变形加工过程中的变形程度,加工温度下的加工时间都会精炼影响晶粒结构,促使晶粒增长.假如该变形工艺是在低温逐步升高的环境下进行的,其材料中的晶粒会保留部分变形.残留的张力会导致加热过程中产生晶粒重排序,即复原,再结晶到晶粒增长.另外残留的张力,初始温度,变形过程中的温度变化,变形均匀度都会影响热加工后产品最终晶粒大小及均匀度,而内杂物,材料二相性,铸造过程中发生分离等多方面因素都可能影响最终晶粒结构.A3-2.2.2 经过热加工的零件常需要其他的辅助加工,包括退火软化,冷加工成形改变尺寸,形状和机械性能.退火温度,冷加工变形程度及均匀度,加工顺序都会影响成品的晶粒大小及均匀性.A3-2.3.3.晶粒度对组件性能的影响A3-2.3.1退火温度对冷加工后不锈钢晶粒结构的影响如下图表所示,晶粒结构在室温下对组件性能的影响如该图表的上半部分所示.随退火温度增加,产品会经历从复原到再结晶到晶粒增长的发展过程,复原即不改变晶粒度,去除冷加工中存在不良结构的晶粒,再结晶即核晶化,新的晶粒形成过程. 一些组件要求更高的机械强度及冷作业条件,所以用于半导体组件制造的不锈钢材料都须经过再结晶得到优质晶粒度,如下图表所示.(此处图表略)A3-3晶粒度对组件加工的影响A3-3.1 晶粒度对机械抛光的影响A3-3.1.1 较粗的晶粒比较细的晶粒要更长的机械抛光时间.随着表面越光滑,其效果越明显.在ASTM E-112文件中表明,通常这种效果不是很显著,除非晶粒度>4的不锈钢要求表面光洁度达到Ra3或更好.A3-3.2 晶粒度对EP的影响A3-3.2.1与较好晶粒度的不锈钢相比,含较粗晶粒度的不锈钢很难通过EP来达到满意的外观要求及Ra 5.A3-3.3晶粒度对化学钝化的影响A3-3.3.1良好的晶粒微观结构包含更多的晶界,晶界是化学物质较活跃和扩散率较高的区域,晶界影响不锈钢表面钝化层中主要成分氧化铬的形成,经调查显示钝化层的厚度与耐腐蚀性之间存在很小的关联,而经验表明对组件性能也没明显的影响.A3-4晶粒度对组件安装的影响A3-4.1晶粒度对组件弯曲后性能的影响A3-4.1.1 弯曲变形会引起表面更粗糙,称之为”桔皮”,较粗的晶体会产生更明显的桔皮现象,导致钝化层中氧化铬更易分解.因此经过最终的化学钝化后,弯曲变形会使表面沉积更多的颗粒或导致耐腐蚀性能力下降,调查表明钝化后对管道弯曲变形会有颗粒产生,防潮性能力下降,其防腐蚀性能力就相当于该管道被焊接截面所具有的防腐蚀性,尽管如此, 目前还没有公开的研究及信息表明管道弯曲与腐蚀速度,湿化时间,及颗粒沉积之间存在关联.A3-4.2晶粒度对焊接能力的影响A3-4.2.1 具有良好晶粒结构的不锈钢很少受到受热影响区(HAZ)裂缝的影响,HAZ裂缝是一种在焊接时由于不同的冷却速度引起的机械压力造成的开裂现象.所以用于半导体气体系统装置的含晶粒度5-10(参考文件ASTM E112)的不锈钢的自动焊接过程中不会存在这种现象,但是当将截面大小明显不同的零件焊接在一起时,由于一个零件的固化及与另一个零件的快速融合会导致这种情况的发生.假如发生开裂现象,很可能是因为晶粒度过粗造成的.A3-5总结A3-5.1 相比材料成本,实用性,组成,及生产和安装工艺过程中的其他控制因素而言,晶粒度对加工工艺和产品应用的影响不是很明显.注: SEMI对该标准对特殊应用的适用性并没做出承诺与保证.决定其适应性是用户的职责,用户需注意制造商的说明,产品标识,产品数据报表,及其他相关的材料和设备的文字说明.这些标准没有备注可通过协商得到更改.。

伯恩半导体 SMB封装 P0300SB 规格书

Page 1 of 4Features◆ Bi-directional crowbar transient voltage protection ◆ High surge capability ◆ High off-state impedance ◆ Low leakage current ◆ Low on-state voltage ◆ Short-circuit failure modeDO-214AA(SMB)Main ApplicationELA ’s thyristor surge protector devices are designed to help protect sensitive telecommunication equipment from the hazards caused by lighning ,power contact,and power induction. These devices enable equipment to comply with various regulatory requirements including GR 1089,ITU K.20,K.21and K.45,IEC 60950,UL 60950,and TIA-968-A(formerly known as FCC Part 68).Typical application including:● Central office switching equipment. Analog and digital linecards(xDSL,T1/E1,ISDN……)● Customer Premises Equipment(CPE)such as phones, fax machines,modems,POSterminals, PBX systems and caller ID adjunct boxes. ● Primary protection modules including Main Distribution Frames(M DF),building entrance equipment and station protection modules.● Access network equipment such as remoteterminals,line repeaters,multiplexers,cross-connects,WAN equipment,Network Int erface Devices(NID).● Data lines and security systems.● CATV line amplifiers and power inserters. ● Sprinkler systems.Electrcal Parameters (Tamb=25℃)Part NumberV DRMI DRMV BOI BOV TI TC O`I H Min.Max.Max.Max.Max.Max.Max.Min.VuAVmAVApFmABEP 0300SB2554080042.27550Eletrical CharacteristicsV DRMS t a nd -o ff v o l tag e,is m ea sur ed a t ID RM I HHolding current.V BOB r e a ko v e r v o l tag e,is m ea sur ed a t 100V/μs. I BOBreadover current.C OOff-state capacitance ismeasured in V DC =2V@1M HZ .I TON-state currentPage 2 of 4I DRM Leakage current,is measured at VDRM.V T On-state voltage.Part Numbering SystemBEPSB(A)(B)(C)(D)(A) SH’s Semiconductor Surge Arrester(B) Series:0080,0300…3500,3800,4200etc. (C) Pake:SMB(DO-214AA)(D) Rating Sure V oltage:B:4KV(10/700μs )Electrical Characteristics CurvesFigure1 V-I CharacteristicsFigure2 tr x td Pulse Wave-formFigure 3 Normalized V S Change versus Figure 4 Normalized DC Holding Current Junction TemperatureBEP SBThermal ConsiderationsPackage DO-214AA/SMBSymbolParameterValueUnitT J Operating Junction Temperature -40 to +150℃T S Storage Temperature Range -40 to +150℃R θJAJunction to Ambient on printed circuit90℃/WSolder Reflow Recommendations●Recommended reflow methods: IR, vapor phase oven, hot air oven, wave solder. ●The device can be exposed to a maximumtemperature of 265°C for 10 seconds. ●Devices can be cleaned using standard industry methods and solvents.Notes: If reflow temperatures exceed therecommended profile, devices may not meet the performance requirements.DimensionInches Millimeters M IN M AX M INM AX A 0.134 0.155 3.40 3.94 B 0.205 0.22 5.21 5.59 C 0.075 0.083 1.90 2.11 D 0.166 0.185 4.22 4.70 E 0.036 0.056 0.91 1.42 F0.073 0.087 1.85 2.2 G 0.002 0.008 0.05 0.20 H 0.077 0.094 1.95 2.40 J0.043 0.053 1.09 1.35 K 0.008 0.014 0.20 0.35 L0.0390.0490.991.24BEP 0030SBProduct Dimensions.079 (2.0)。

Bosch DSA E-Series 8TB (E2700) 商品说明书

uScale-up network storage solution: controller unit with 12 internal HDDs expandable via state-of-the-art SAS interface-connected expansion units uConfigurable hardware-based RAID protection(RAID‑5 or RAID‑6) for highest system performance uRedundant hot-swappable power supplies and cooling fansuTwo 10 Gigabit Ethernet ports for highest speed iSCSI connectivityuFully modular design for ease of service andprotected by NetApp services, including a 3 years next business day on-site supportDSA E2700 represents the next generation ofDSA E‑Series, the iSCSI-based digital video disk arrays by Bosch. They are state-of-the-art platforms designed for the security industries most demanding digital video storage applications to manage relentlesslygrowing digital video data. Since HD and recently UHD (4K) IP cameras and encoders have entered the surveillance market, the ever growing need for high bandwidth and low complexity of the storage infrastructure are the main challenges. The next generation DSA E2700 is the answer to it.System overviewDSA E2700 is based on one 2U controller unit with 12internal 3.5”, 7.2 K, NL-SAS (Serial Attached SCSI),enterprise HDDs (Nearline SAS).The controller unit is available as a standard Simplex Controller configuration and as a Dual SimplexController configuration for high-capacity and extreme performance requirements.This storage system is a high-performance solution designed with robust flexibility that makes it a great fit for wide-ranging video surveillance requirements. Its balanced performance is designed for supporting high bandwidth and I/O intensive workloads.The DSA E2700 disk shelf option with a standard 12-bay expansion unit with 12 x 3.5”, 7.2 K, NL-SAS,enterprise HDD (2U) and a high-density 60-bay expansion unit with 60 x 3.5”, 7.2 K, NL-SAS,enterprise HDD (4U) enable custom configurations that can be optimized for any standard mid- to enterprise-environments.And the DSA E2700 fully redundant I/O paths,advanced protection features, and extensive diagnostic capabilities deliver high levels of availability, integrity, and security.FunctionsDSA E2700 is the co-branded E2700 series fromNetApp. It is a scale-up network storage solution that provides security, highest “in-the-box” scalability,peace-of-mind data protection, and simplifiedmanagement of all your video data. NetApp pioneeredthe iSCSI protocol years ago and offers with the new E2700 product line a high-end product for the video surveillance market.DSA E2700 in Simplex/Dual Simplex Controller configuration allows connecting up to seven 12-bay expansion units (12 x HDDs per expansion shelf) to one single/dual controller base unit.Note: This is only valid for 12-bay expansion units with two ESM modules.The Dual Simplex Controller configuration allows up to three 60-bay expansion units (60 x HDDs per expansion shelf) connected to one dual controller base unit. Connecting the 60-bay expansion unit to a single controller unit is not supported.It is a fully featured RAID protected disk array which provides RAID‑5 protection for capacity-oriented environments and RAID‑6 protection for availability-oriented environments. The RAID protection is based on a hardware RAID implementation for highest system performance. RAID‑6 is highly recommended if the system will be used with a larger number of disk shelf expansion units.High reliability and availabilityDSA E2700 keeps your data safe and available with redundant hot-swappable power supplies and fans, and protection from double-disk failure and single bit errors during RAID rebuilds with high performance RAID‑6.With over 20 years of storage development experience, DSA E2700 is based on a field-proven design architected to provide high reliability and availability. Its redundant components, automated path failover, and online administration keep organizations productive 24 x 7 x 365.Further high-availability features include:•Automatic drive failover and detection and rebuild ifusing global hot spare drives•Data cache with battery backup and de-stage to flash •SANtricity proactive drive health monitoring identifies problem drives before they create issues MonitoringFull SNMP support with MIB‑II and NetApp custom MIBs supported. In case of component failures SNMP, e-mail alert notifications will be generated. Additionally, an event monitor for sending alert notifications to a central major event log is available. If DSA E2700 is connected to the Internet/Intranet automatically generated AutoSupport messages can be sent. AutoSupport enhances customer service, speeds problem resolution, and helps prevent issues. It automatically sends alerts based on either event-based or time-based (weekly, daily, other) criteria to provide faster and better customer service, keeping your systems up and running longer.ManagementNetApp SANtricity storage management software combines robustness and ease of use. Full-time storage administrators appreciate the extensive configuration flexibility which allows optimal performance tuning and complete control over data placement. Part-time system administrators love the intuitive interface and wizards designed to simplify their tasks. With its dynamic capabilities, SANtricity software supports on-the-fly expansion, reconfiguration, and maintenance without interrupting storage system I/O. The software is available as 32‑bit and 64‑bit Microsoft OS installation package (available on the Bosch product catalogue).Installation/configuration notesInstallable on 32-bit and 64-bit Windows Clients, SANtricity storage management software provides easy central management of all DSA E‑Series arrays available within one network. There is no additional software necessary to be installed on peripheral devices. In addition, the system provides a powerful Command Line Interface (CLI) which is fully remote accessible by SSH (Secure Shell).DSA E‑Series offers per controller a serial console connector and two dedicated Ethernet management ports for management access and 2 x 10 Gigabit Ethernet iSCSI host ports. Each port must be configured with a separate IP address; the two iSCSI host ports are separated access paths to the storage system and represent an individual iSCSI target each. The net capacity available is shown in the followingtable:network (in a 1 Gbit/s network the available network bandwidth is the limiting factor):Network Uplink 10 GbE (RAID-5 / RAID-6)not depend on the number of used ports. The numberof cameras will double by using two ports instead ofone port.NoticeNumber of IP cameras refers to default software configuration (no direct replay mode). Bandwidth data refers to <Recording> / <Replay>.The maximum overall bandwidth of a Dual Simplex Controller system is 2500 Mbps read/write throughput in a 10 GbE uplink network.NoticeDSA E2700 units are only supported by Bosch Firmware 5.60 and later, VRM 3.0 and later, and Configuration Manager 5.32 and later.If total net capacity of the system exceeds 500 TB,Video Recording Manager and Bosch Firmware with large LUN support is required (min. VRM 3.60and Firmware 6.30).NoticeThe next business day on-site service level can only be provided if the respective system has been registered immediately after receipt and installation. Otherwise, service will be provided based on best effort basis.Information about registration details is available in every shipment (registration form) or from the Bosch online product catalog.Next business day services cannot be provided in every country everywhere. For limitations and exceptions see the registration details in the registration form.Dimensions controller unit and 12-bay expansion unitDimensions 60-bay expansion unitFront view controller unit1End Caps (the Left End Cap has the Controller-Drive Tray Summary LEDs)2Drive CanistersRear view Dual Simplex Controller unit1Controller Canister 2Power-Fan CanisterFront view 12-bay expansion unit1End Caps (the Left End Cap has the Drive Tray LEDs)3Right End Cap 2DrivesRear view 12-bay expansion unit1ESM A Canister 3Power-Fan A Canister 2ESM B CanisterFront view 60-bay expansion unit1Drive Drawer 14Drive Drawer 42Drive Drawer 25Drive Drawer 53Drive Drawer 3Rear view 60-bay expansion unit1Fan Canisters 3ESM Canisters 2Power CanistersSimplex Controller 12 x 8 TB (DSA‑N2E7X8‑12AT) /Dual Simplex Controller 12 x 8 TB (DSA‑N2C7X8‑12AT)Electrical requirementsPower ratings (typical operating power)Note: for detailed information please see the latest NetApp E‑SeriesStorage Systems Site Preparation Guide Battery data System hardware specificationsMechanicalDimensions (H x W x D)WeightSpace requirements Environmental TemperatureRelative humidity (non-condensing)Acoustic noise12-bay expansion unit 12 x 8 TB (DSX‑N1D6X8‑12AT)Electrical requirements—expansion unitPower ratings—expansion unitNote: for detailed information please see the latest NetApp E‑Series Storage Systems Site Preparation Guide System hardware specifications—expansion unit Mechanical—expansion unit Dimensions (H x W x D)WeightSpace requirementsEnvironmental—expansion unit TemperatureRelative humidity (non-condensing)Acoustic noise60-bay expansion unit 60 x 8 TB (DSX‑N6D6X8‑60AT)Electrical requirements—expansion unitNote: cables included with the 60-bay expansion systems are designed to be used with 220 - 240 VAC power distribution units Power ratings—expansion unitNote: for detailed information please see the latest NetApp E‑Series Storage Systems Site Preparation Guide System hardware specifications—expansion unitMechanical—expansion unit Dimensions (H x W x D)WeightSpace requirementsEnvironmental—expansion unit TemperatureRelative humidity (non-condensing)Acoustic noiseNotes:General technical information for the RAID systems are provided in the NetApp E‑Series Storage Systems Site Preparation Guide (available at https:///ecm/ecm_download_file/ECMP12366559)NetApp, AutoSupport, and SANtricity are registered trademarks of NetApp, all rights reserved. All data and dimensions are referenced from the NetApp Site Preparation Guide and from the NetApp Website and are subject to change without notice.Ordering informationDSA-N2E7X8-12AT Base unit 12x8TBHigh-performance and high-capacity storage system base unit with iSCSI disk arrays.12 x 8 TB HDDOrder number DSA-N2E7X8-12ATDSA-N2C7X8-12AT Storage system 12x8TB dual control-lerHigh-performance and high-capacity storage system base unit with iSCSI disk arrays, dual controller.12 x 8 TB HDDOrder number DSA-N2C7X8-12ATDSX-N1D6X8-12AT Expansion unit 12x8TBHigh-performance and high-capacity storage expansion unit with iSCSI disk arrays.12 x 8 TB HDDOrder number DSX-N1D6X8-12ATDSX-N6D6X8-60AT Expansion unit 60x8TBHigh-performance and high-capacity storage expansion unit with iSCSI disk arrays.60 x 8 TB HDDOrder number DSX-N6D6X8-60ATAccessoriesDSA-EDTK-800A Hard disk 8TB for DSA E-seriesHard disk storage expansion with a capacity of 8 TB. Order number DSA-EDTK-800ADSX-WDTK-800A Hard disk 8TB DE6600 for DSA E-ser-iesHard disk storage expansion with a capacity of 8 TB. For 60-bay expansion units.Order number DSX-WDTK-800ADSX-NRCK40-INT DSA E-Series Rack Empty, 40U Empty rack with 40U.Order number DSX-NRCK40-INT ServicesSupportEdge Standard extension, 12-bay 4/6/8 TB12-month extension of SupportEdge Standard next business day for DSA E2700 4 TB, 6 TB, or 8 TB based 12-bay controller or expansion units, available for a 4th and a 4th/5th year as a standard.Order number DSA-S2E7X46-SLESupportEdge Standard extension, 60-bay 4/6/8 TB12-month extension of SupportEdge Standard next business day for DSA E2700 4 TB, 6 TB, or 8 TB based 60-bay expansion units, available for a 4th and a 4th/5th year as a standard.Order number DSA-S6D6X46-SLEParts replacement, 12-bay 4/6/8 TB12-month service uplift to SupportEdge Standard: parts replacement within 4 hours for DSA E2700 4 TB, 6 TB, or 8 TB based 12-bay controller or expansion units, available for in-warranty systems only.Order number DSA-S2E7X46-4PRParts replacement, 60-bay 4/6/8 TB12-month service uplift to SupportEdge Standard: parts replacement within 4 hours for DSA E2700 4 TB, 6 TB, or 8 TB based 60-bay expansion units, available for in-warranty systems only.Order number DSA-S6D6X46-4PRNon-returnable disk, 12-bay 4/6/8 TB12-month non-returnable disk option for DSA E27004 TB, 6 TB, or 8 TB based 12-bay controller or expansion units, available for in-warranty systems only. Order number DSA-S2E7X46-NRDNon-returnable disk, 60-bay 4/6/8 TB12-month non-returnable disk option for DSA E27004 TB, 6 TB, or 8 TB based 60-bay expansion units, available for in-warranty systems only.Order number DSA-S6D6X46-NRDRepresented by:Europe, Middle East, Africa:Germany:North America:Asia-Pacific:Bosch Security Systems B.V.P.O. Box 800025600 JB Eindhoven, The Netherlands Phone: + 31 40 2577 284****************************** Bosch Sicherheitssysteme GmbHRobert-Bosch-Ring 585630 GrasbrunnGermanyBosch Security Systems, Inc.130 Perinton ParkwayFairport, New York, 14450, USAPhone: +1 800 289 0096Fax: +1 585 223 9180*******************.comRobert Bosch (SEA) Pte Ltd, Security Systems11 Bishan Street 21Singapore 573943Phone: +65 6571 2808Fax: +65 6571 2699*****************************© Bosch Security Systems 2017 | Data subject to change without notice 24616659979 | en, V2, 17. Aug 2017。

SMT(1)

SMT知识点SMT(Surface mounting technology)包括SMD和SMC.IC：常规封装集成电路（SOT、SOP、SOJ、PLCC、QFP、BGA、CSP等）。

SMD(有源表面组装元件）：如片式电阻、电容、电感等；SMC（无源表面组装器件）：如小外形晶体管SOT及各种不同封装形式的表面贴装集成电路等.Hot bar super Flux自动点助焊剂设备SMT与THT（传统插装技术）的根本区别是“贴”和“插”SMT的优越性：1.实现微型化2.信号传输速度高3.高频特性好4.有利于自动化生产，提高成品率和生产效率。

5.材料成本低6.SMT技术简化了电子整机产品的生产工序，降低了生产成本。

SMT的主要内容：它主要包含表面元器件、基板、材料、工艺、设计、检测技术、组装和检测设备、控制和管理等技术。

SMT工艺的基本内容：组装材料选择、组装工艺设计、组装技术和组装设备4大部分。

SMT工艺技术涉及化工与材料技术（如各种焊锡膏、焊剂、清洗剂）、涂敷技术（如焊锡膏印刷）、精密机械加工技术（如漏印网版制作）、自动控制技术（如设备及生产线控制）、焊接技术和测试、检验技术、组装设备应用技术等诸多技术。

SMT生产系统的组线方式：由表面涂敷设别、贴装机、焊接机、清洗剂、测试设备等表面组装设备形成的SMT生产系统习惯上称为SMT生产线。

工艺工程：1、印刷。

2、点胶。

3、贴装。

4、固化。

5、再流焊接。

6、清洗。

7、检测。

8、返修。

SMT流程：粘贴PCB→反面锡膏印刷→SPI锡膏检测→反面元件贴装→AOI外观检测→反面屏蔽架贴装→反面压JIG→反面回流焊接→反面取JIG→AOI外观检测→正面锡膏印刷→SPI锡膏检测→正面元件贴装→AOI外观检测→正面屏蔽架贴装→正面压JIG→正面回流焊接→翻板→贴MESH→正面取JIG镭射→焊后AOI外观检测SMT元器件包装分为：散装、盘状编带、管式包装和塑料托盘包装（4种）SMB指SMT的PCB板；特点:①高密度②小孔径③热膨胀系数（CTE底）④耐高温性能好⑤平整度高PCB电路板一般采用铜板；钢网一般用激光（蚀刻、电铸）开口。

plustek Network Video Recorder 说明书

未經允許不得翻印本手冊其中任何一部份。

本手冊內容提及之公司名稱和註冊商標均屬於各公司和所有者。

本手冊中所有內容都經過仔細考證，儘管如此，我們不排除可能由於疏忽、偶然情形或其他原因造成本手冊出現錯誤、遺漏、或不恰當表述，我們對這類錯誤、遺漏或不恰當表述不承擔任何責任和義務。

本手冊內容若有更動，恕不另行通知。

本公司NVR產品應使用於合法用途，某些國家或州當地法律明文禁止該等產品的某些特定的用途，例如因特定目地而秘密進行錄製聲音或影像訊息。

如果對該產品被建議的使用方式合法有疑問，請諮詢當地法律顧問後再行使用。

本產品的設計和製造得到持續改進，以符合新的環保要求。

我們致力於將產品符合全球環保標準。

請您向當地相關部門諮詢報廢該類物品的處理方法。

本產品的外包裝可被回收再利用。

注意回收再利用 (僅用於歐洲國家)保護環境！禁止將這種産品扔進家居類廢物垃圾箱。

請把它交給您所在居民區的廢物免費處理中心處理。

本使用手冊的螢幕圖例使用Windows XP畫面。

若您使用的系統是Windows 2000, Vista或7，您螢幕上的實際畫面會略有不同，但功能是一樣的。

目錄簡介 (1)關於本使用手冊 (1)本手冊所使用的標示 (1)圖示說明 (1)安全注意事項 (2)NVR主要功能 (2)系統需求 (3)產品包裝附件 (3)NVR 4000/4200/4300 (4)NVR Slim240 (4)NVR 4200V (5)產品外觀 (6)NVR 4000/4200 (6)NVR 4300 (7)NVR Slim240 (8)NVR 4200V (9)第一章. 安裝NVR (10)安裝NVR系統 (10)I. 連接網路攝影機(IP Cameras) (10)II. 連接監控攝影機(CCTV Cameras)及影像伺服器(Video Servers) (14)第二章. 如何使用NVR (19)登入 NVR (19)方法一.搜索工具程式 (Network Device Search Tool) (19)方法二. IE 地址欄 (20)設定精靈 (21)步驟 1 - 系統設定 (21)步驟 2 - WAN設定 (22)步驟 3 - LAN設定 (23)新增網路攝影機 (23)NVR觀看視窗 (25)語言 (25)即時預覽 (25)錄影事件記錄 (27)物體移動偵測 (30)登出 NVR (31)第三章. NVR進階設定 (32)設定精靈 (32)步驟 1 - 系統設定 (33)步驟 2 - WAN設定 (33)步驟 3 - LAN設定 (34)本機資訊 (35)系統狀態 (35)網路攝影機 (36)網路資訊 (36)WAN (36)LAN (40)客戶端清單 (41)網路攝影機 (41)裝置管理 (42)影像設定 (44)硬碟資訊 (45)系統資訊 (46)使用者資訊 (46)維護 (47)事件記錄 (48)系統設定 (49)日期與時間設定 (49)資料庫 (50)管理 (50)資料管理 (51)排程設定 (51)錄影排程 (51)事件排程 (52)安全控管 (53)事件設定 (53)警報通知 (55)事件記錄 (56)第四章. 技術資訊 (57)LED指示燈 (57)搜索工具程式 (57)IP設定資訊 (58)透過NVR使用動態IP位址 (59)代理伺服器 (60)重新設定 NVR (62)NVR關機 (62)附錄A: 專有名詞 (63)附錄B: 規格 (66)附錄C: 售後服務和保證 (71)産品保證聲明 (71)FCC 射頻干擾聲明書 (72)聯繫PLUSTEK (73)簡介歡迎選購我們的産品。

Suntech PV-Module 产品说明书

LIMITED MANUFACTURER'S WARRANTY FOR PV‐MODUL E SValid as of January 01, 2016Congratulations, you have decided on the purchase of SUNTEC H‐products with a long operating life. Suntech Photovolta ic‐M odules have a 12 years warranty on material and workmanship as well as a 25 years linear warranty on performance (for more detailed information see below).I. General TermsThis warranty is provided by Wuxi Suntech Power Co., Ltd, 9 Xinhua Road, Wuxi New District, China 214028 (SUNTECH POWER) and applies to the following Standard‐P V‐Modules (PV‐Module s) with the following classifications (MODULE‐TYPE):STP XXX(S)‐20/Wd(b, e, j, z)(+) (XXX = 170‐340)STP XXX(S)‐20/We(b, e, m, r, w)(+)(-TG) (XXX = 170‐340)STP XXX(S)‐24/Vd(b)(+)(XXX = 170‐340)STP XXX(S)‐24/V e(b, r, m)(+) (-TG) (XXX = 170‐340)AMC_Wd_XXX (XXX=250-290)XXX stands for the performance classification of a PV‐module. S/Z/d/+/b/e/m/j/r/x/w/J/C/D defines the individual module variants, as described in the corresponding product datasheet. SUNTECH POWER shall WARRANT its Photovoltaic Solar Modules’ (MODULES) performance (i) starting from the date of sale with the certifiable invoice (SALES DATE) to the first customer installing (for their own use) the MODULES (CUSTOMER) or (ii) starting at the latest 12 months after MODULES dispatch from the SUNTECH POWER factory, whichever occurs earlier (the WARRANTY START DATE).These warranty terms exclusively apply to END‐CUSTOM ERS. END‐CUSTOM ER in terms of this warranty is the purchaser of the respective PV‐M odule, who has purchased the respective PV‐Module for end‐use and has installed the same for the first time (First Installation). This warranty is transferrable by an END‐CUSTOM ER to the purchaser of an already installed PV‐module insofar as the PV‐module remains at its original place of installation. Claims under this warranty cannot be transferred to third parties.Therefore, these warranty terms do not apply to intermediaries, installation companies, or second‐hand purchasers, who install the PV‐module again at a different place of installation (second installation). The present "Manufacturer's warranty for PV‐module s" does not apply to PV‐modules marked as “Grade A”or “Gra de B”on the nameplate. SUNTECH POWER herewith explicitly refers to the “S pecial Warranty for PV‐modules ma rked Grade A”, and the “Sp ecial Warranty for PV‐modules marked Grade B”, which apply to the respective categories of PV‐modules.1. Territory of validity of this warrantyThis warranty applies only inside the European Economic Area and Switzerland, in as far as the respective PV‐module has been put into circulation there for the first time by SUNTECH POWER respectively with the consent of SUNTECH POWER. The corresponding warranty terms for other regions will apply for if European distributors / EPC companies reship the PV modules to non-European country projects for installation. 2.Applicability of national lawFor this warranty and legal disputes concerning this warranty the laws of such country in the European Economic Area and Switzerland in which the respective PV‐module has been purchased by the END‐CUSTOM ER apply, excluding the UN Convention on the International Sales of Goods as well as conflict of law’s provisions.3.ValidityThe present warranty applies to all PV‐modules which have been produced by SUNTECH POWER between the 1st and the 52nd calendar week of the year2016.The END‐CUSTOMER receives this warranty transmitted on demand in text form –e.g. by E‐Mail‐from SUNTECH POWER. This warranty can furthermore be downloaded from http://eu.suntech‐/ or obtained from a SUNTECH DISTRIBUTION PARTNER listed on the site http://eu.suntech‐/.Additional note:This manufacturer’s warranty for PV‐MODUL ES valid as of Jan2016is also applicable for PV-modules of SUNTECH POWER which have been manufactured in 2015 which, however, are being sold to the END‐CUSTOM ER or being installed for the END‐CUST OMER in2016 with the limitations named under the general terms. II. Notification of END CUSTOM ER’S sta tutory rightsThis voluntary, independent and limited manufacturer's warranty exists independently of statutory and potential contractual rights of the END‐CUSTOM ER against the SELLER and/or INSTALLER of the respective PV‐module, which remain unaffected by this manufacturer's warranty.III. Lim it e d Manufacturer's warrantySUNTECH POWER grants the END‐CUSTOMER a product warranty (1.) regarding material defects of the respective PV‐module, as well as a performance warranty (2.) regarding a power reduction of the respective PV‐module inside the timeframes indicated in the following.1. Product warrantyi. Scope, start and duration of the product warranty protectionSUNTECH POWER warrants for each PV‐module for a period of 12 years as of the respective WARRANTY START DATE that the respective PV‐module is free of material defects.ii. WarrantyIn a warranty case, SUNTECH POWER will either repair the defective PV‐module free of charge or replace the same by a functional PV‐module of the same type, free of charge. In case that the respective PV‐module type is no longer manufactured by SUNTECH POWER at the time of the warranty case, SUNTECH POWER retains the right to supply a functionally equivalent PV‐module of the same or higher power of a different type or refunds the owner with an actual market price commonly agreed with the owner. The remaining period of the original warranty period applies to newly supplied or repaired PV‐modul es.2. Performance warrantyi.Scope, start and duration of the performance warranty protection SUNTECH POWER warrants for each PV‐module as a voluntary, independent performance warranty:∙For poly module, 97.5% in the first year, thereafter, for years two (2) through twenty-five (25), 0.7% maximum decrease per year, ending with the 80.7% in the 25th year after the defined WARRANTY STARTING DATE.∙For mono module, 97% in the first year, thereafter, for years two (2) through twenty-five (25), 0.7% maximum decrease per year, ending with the 80.2% in the 25th year after the defined WARRANTY STARTING DATE.∙For hypro-mono module, 97.5% in the first year, thereafter, for years two (2) through twenty-five (25), 0.7% maximum decrease per year, ending with the80.7% in the 25th year after the defined WARRANTY STARTING DATE.The nominal power listed on the nameplate is the power in Watt (W) which a PV‐module generates under the following Standard‐Tes t‐Conditions(STC) according to the norm IEC 61215 in its Maximum Power Point (MPP):a) A light spectrum of Air‐Mass (AM) 1.5b) An irradiation of 1000 W/m² at right angle irradiationc) A module temperature of 25°CThe deviation of the nominal power is to be determined under STC.ii. Warranty performance of SUNTECH POWEREN‐REV‐EU1.0‐2016 1/2www.suntech‐In a warranty case SUNTECH POWER will either repair the defective PV‐module free of charge or r eplace the defective PV-module by a functional PV‐module of the same type free of charge. In case that the respective PV‐module type is no longer manufactured by SUNTECH POWER at the time of the warranty case, SUNTECH POWER retains the right to supply a functionally equivalent PV‐module of the same or higher power of a different type or refunds the owner with an actual market price commonly agreed with the owner. The remaining period of the original warranty period applies to newly supplied or repaired PV‐modul es. The following conditions apply to both warranties.3. Warranty case and claiming warranty performancei. Report of a warranty caseThe report shall include the following information:∙Name and address of the END‐CUS TOMER, INSTALLER resp. SELLER.∙A copy of the invoice with reference to the claimed module serial numbers / module type or purchase agreement and installation agreement.∙ A copy of the installation test report following minimum requirements of IEC 62446 / IEC 60364-6∙A copy of the periodical maintenance reports as recommended or required by regional regulations or legal requirements and acceptance protocol of handover after the installation was finished and the system connected to the grid with all relevant measured system data.∙MODULE TYPE and Serial number(s), Quantity of the respective PV‐module(s).∙Address of the place of installation of the respective PV‐modul e, in as far as this address differs from the address of END‐CUSTOMER.∙ A short but clear description of the problem at hand and what is claimed, as well as a short description of the tests which may have already been performed and with which tools, as well as their results.a. In particular, regarding a material defect: High quality pictures of the defective PV-module which show the defect including pictures of the system and surrounding environment.b. In the case of a low power output: information regarding the PV-generator, the inverter, the circuitry / layout (please see the installation documentation for this which you should have received from your INSTALLER) as well as the pictures of shadowing situation at the location.∙The requested warranty performance and reason of claim, etc.The report of a warranty case is to be addressed to one of the Servic e‐/ Contact‐Addres ses of SUNTECH POWER, listed below.ii. DeadlineA warranty case is to be reported within 10 weeks after becoming aware of the circumstances which constitute a warranty case. The timely receipt of the report by SUNTECH POWER shall be decisive. The deadline is met, if the report is received by SUNTECH POWER via fax or email in advance.iii. Return of a PV‐moduleThe END‐CUST OMER is only authorized to return the respective PV‐module after prior written consent of SUNTECH POWER.Recycling must be done via regional recycling organization following the national law or regulation and managed by the owner.iv. CostsIn a warranty case, SUNTECH POWER will bear the relevant costs for testing, dismounting, transport, repair and mounting not exceeding average regional market costs for all modules which are finally accepted as valid. Loss of use, loss of profits, loss of production, and loss of revenues are specifically and without limitation excluded.Suntech Power will not cover costs for claims and modules which finally turn out being invalid.4. Limitation of liabilityThis MANUFACTURER'S WARRANTY applies only in case of proper use of the above listed PV‐module types in keeping with the respective conditions of operation and qualified installation according to the applicable datasheets and the applicable installation guides of SUNTECH POWER. These can be obtained from SUNTECH POWER directly or from one of the SUNTECH DISTRIBUTION PARTNERS listed on http://eu.suntech‐/. The respectively applicable datasheets and installation guides are defined by year of the PRODUCTION DATE. Therefore, the datasheets and installation guides of 2014 are applicable for this warranty.This MANUFACTURER'S WARRANTY will not apply if the material defect or the reduced power was caused by circumstances or acts which are beyond the control of SUNTECH POWER, in particular:∙Mechanical, electric or thermal overload, faulty mounting resp. putting into operation not in keeping with the conditions of the respectively applicable datasheet as well as the respectively applicable installation guide.∙Use of unsuitable connect or‐ or service‐parts, inappropriate modifications of the PV‐module or inappropriately executed repairs or module handling.∙Incidences caused by acts of god, e.g. damages caused by falling trees or branch breaks, floods, landslides, damages caused by violent storms, fire, animals.∙Theft, willful damage or vandalism.∙Impairments caused by external effects, such as e.g., dirt stains,smoke, damages caused by salt, by chemicals not explicitly authorized for use, e.g. for cleaning.∙Power outage, surge voltage, lightning, accidental breaking of the PV‐module.Claims under the MANUFACTURER'S WARRANTY can only be recognized if the serial number of the respective PV‐module is unchanged, has not been removed or obscured.5. Further termsThe further use of any replaced PV module will be determined individually by Suntech Power.6. Partial nullityShould one of the clauses of the present "Manufacturer's warranty for PV‐modules" or their applicability to a certain person or a certain circumstance be deemed invalid, void or unenforceable, all other clauses and the further applicability of the present "Manufacturer's warranty for PV‐modules" remain unaffected.7. Dispute regarding a material defect or a reduced powerIn case of a dispute regarding the existence of a material defect or reduced power in a warranty case, SUNTECH POWER will accept the judgment of an accredited testing institute such as e.g. the Fraunhofer ISE in Freiburg i. Br., the TÜV Rheinland in Cologne, the Verbands der Elektrotechnik (VDE) in Frankfurt as binding.If you have questions regarding the products of SUNTECH POWER or their quality and performance, please contact SUNTECH POWER:Service‐/ Cont act‐AddressesE‐Mail:************************************************************************************************ChinaAddress: 9 Xinhua Road, Wuxi New District, China 214028Telephone: +86 400 8888 009（Customer Service Hot Line）Fax: +86 510 8534 3321E‐Mail: *******************************All warranty performances will always be provided by the warrantor of this manufacturer's warranty, Wuxi Suntech Power Co., Ltd.EN‐REV‐EU1.0‐2016 2/2www.suntech‐。

SMN04L20IS I-PAK规格书 AUK推荐

Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth(j-c) Rth(j-a) Rating Max. 3.78 Max. 50 Unit C/W
Typ. 90 0.29
Max. 3.2 12.8 1.5 -
Unit A A V ns uC
Reverse recovery charge
Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=7.6mH, IAS=3.2A, VDD=50V, RG=25, Starting TJ=25C 3. Pulse test: Pulse width≤300us, Duty cycle≤2% 4. Essentially independent of operating temperature typical characteristics
Rev. date: 01-OCT-13
KSD-T6Q017-001
www.auk.co.kr
2 of 8
SMN04L20IS
Typical Electrical Characteristics Curves
Fig. 1 ID - VDS Fig. 2 ID – VGS
Fig. 3 RDS(ON) - ID
(Note 3,4)
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)
Characteristic Source current (DC) Source current (Pulsed) Forward voltage Reverse recovery time

星辰科技 ST4200USBM 可拔枪式4口坚固工业USB串口说明书

DE: Bedienungsanleitung - FR: Guide de l'utilisateur - ES: Guía del usuario - IT: Guida per l'uso - NL: Gebruiksaanwijzing - PT: Guia do usuário - ST4200USBMMountable 4 Port Rugged Industrial USB Hub *actual product may vary from photosFCC Compliance StatementThis equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipment generates, uses and can radiate radio frequency energy and, if not installed and used in accordance with the instructions, may cause harmful interference to radio communications. However, there is no guarantee that interference will not occur in a particular installation. If this equipment does cause harmful interference to radio or television reception, which can be determined by turning the equipment off and on, the user is encouraged to try to correct the interference by one or more of the following measures:• Reorient or relocate the receiving antenna.• Increase the separation between the equipment and receiver.• Connect the equipment into an outlet on a circuit different from that to which the receiver is connected.• Consult the dealer or an experienced radio/TV technician for help.Use of Trademarks, Registered Trademarks, and other Protected Names and SymbolsThis manual may make reference to trademarks, registered trademarks, and other protected names and/or symbols of third-party companies not related in any way to . Where they occur these references are for illustrative purposes only and do not represent an endorsement of a product or service by , or an endorsement of the product(s) to which this manual applies by the third-party company in question. Regardless of any direct acknowledgement elsewhere in the body of this document, hereby acknowledges that all trademarks, registered trademarks, service marks, and other protected names and/or symbols contained in this manual and related documents are the property of their respective holders.Table of ContentsIntroduction (1)Features (1)Package Contents (1)Connector Layout (2)Hardware Installation (3)Checking the Hub Installation (4)Specifications (4)Technical Support (5)Warranty Information (5)IntroductionThank you for purchasing a ST4200USBM High-Speed 4-Port USB2.0 hub. This ruggedly built hub is ideal for industrial environments and can be wall-mounted or installed onto a DIN rail for convenient access to the ports. This four port industrial hub can be bus-powered or self powered, with a three wire terminal block connector (7-24V).Features• Choice of Bus Power and/or External Terminal Block Power• Compact space saving and mountable design (mount on a wall or DIN rail)• Max data transfer rate of up to 480 Mbps and backwards compatible with USB 1.1 • Includes a 2 meter USB cable for quick and easy installationsPackage Contents• USB 2.0 Hub• User’s Manual• 2m USB A-B cable• DIN Rail Mounting KitConnector LayoutActivity LEDs for Downstream Ports: These 4 LED indicators will blink whenever the USB ports are transferring data.Upstream Port Connector: Type-B USB connector for upstream USB connection.Self-Power Input Connectors: 3-Pin terminal block connectors used to connect the hub to an available power source. The voltage can be in the range of +7V to 24VDC.WARNING: Ensure that the polarity of the input power is correctly matched to that ofthe terminal block pins. Otherwise, it may damage the hub.Hardware Installation1. Use static electricity discharge precautionsEliminate the potential for static discharge from any objects that the hub may come in contact with before the installation. This can be accomplished by touching a bare metal chassis rail after you have turned off the power.2. Apply DC power to the 3-pin Terminal Block ConnectorThe terminal block connector adds power to ensure there is enough to run the 4 downstream USB ports.3. Connect the USB host cableThe host cable is a standard A-to-B USB2.0 cable. Connect the type-A connector to the upstream USB port being used, then connect the type-B connector to the USB hub. Since the hub is plug and play, it can be connected while the host computer is powered on.4. Connect the USB devices to the downstream ports of the hub.5. Mount the hub on the wall or DIN RAIL if required.Checking the Hub InstallationTo check the USB hub installation in Windows Device Manager, follow these steps:1. Click Start2. Click Control Panel3. Click System4. Click Device Manager5. Double click Universal Serial Bus Controller6. Double click Generic USB HUB7. The message should show that the device is working properlySpecificationsTechnical Support’s lifetime technical support is an integral part of our commitment to provide industry-leading solutions. If you ever need help with your product, visit /support and access our comprehensive selection of online tools, documentation, and downloads.For the latest drivers/software, please visit /downloads Warranty InformationThis product is backed by a two year warranty.In addition, warrants its products against defects in materials and workmanship for the periods noted, following the initial date of purchase. During this period, the products may be returned for repair, or replacement with equivalent products at our discretion. The warranty covers parts and labor costs only. does not warrant its products from defects or damages arising from misuse, abuse, alteration, or normal wear and tear.Limitation of LiabilityIn no event shall the liability of Ltd. and USA LLP (or their officers, directors, employees or agents) for any damages (whether direct or indirect, special, punitive, incidental, consequential, or otherwise), loss of profits, loss of business, or any pecuniary loss, arising out of or related to the use of the product exceed the actual price paid for the product. Some states do not allow the exclusion or limitation of incidental or consequential damages. If such laws apply, the limitations or exclusions contained in this statement may not apply to you.Hard-to-find made easy. At , that isn’t a slogan. It’s a promise. is your one-stop source for every connectivity part you need. From the latest technology to legacy products — and all the parts that bridge the old and new — we can help you find the parts that connect your solutions.We make it easy to locate the parts, and we quickly deliver them wherever they need to go. Just talk to one of our tech advisors or visit our website. You’ll be connected to the products you need in no time.Visit for complete information on all products and to access exclusive resources and time-saving tools. is an ISO 9001 Registered manufacturer of connectivity and technology parts. was founded in 1985 and has operations in the United States,。

MICROTEK S400DC 说明书

4
使用说明书（安装编）
目录表
启动前 ........................................................................................................6
安全须知 ..............................................................................................................................6 注意事项 ..............................................................................................................................9
S400DC
CD-ROM
介绍
介绍
承蒙惠购Microtek高速彩色扫描仪。
突出特点
出众的进纸能力 • 本扫描仪配有高级进纸机构，可以监测文件状态并相应地调节滚筒的压力。因此，本扫描仪可以扫描从薄
为20 g/m²（克／平方米）至厚为209 g/m²（克／平方米）的大范围纸张重量。
高速双面扫描 • 本扫描仪可以高速扫描文件，而无需考虑分辨率（200 dpi / 300 dpi）或图像类型（黑白 / 彩色）。
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电源和接地连接
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CommScope Mini-OTE 200 光纤封闭式设备说明书

1 General1.1 General product information 1.2 Cable types1.3 Symbols of this guide2 Tools Required3 Part List4 Supplementary kit5 Installation splitter/point to point module5.1 Slide in module5.2 Connect connectors to DLX adapters 5.3 Connect connectors to full size hardened adapters5.4 Bring fibers to the organizer 5.5 Close protection cover6 Cable preparation6.1 Loop capacity6.2 Cable retention (TENIO CTU) 6.3 Insert feeder loop to storage area 6.4 Gel containment 6.5 Securing cable6.6Install tube guidance7 Splice feeder to splitter/point to point module7.1 Organizer 7.2 End cut7.3 Mid cut8 Branch cable8.1 Prepare cable8.2 Connect branch cable to feeder cable9 Close the closure 10 Mounting the closure10.1 Wall mounting10.2 Pole mountingContent1 General1.1General Product InformationCommScope’s Mini-OTE 200 closure is a gel sealed fiber optic enclosure designed for splicing, termination and pass-through cable requirements in fiber-to-the-X (FFTx) architectures.The closure is available in 4,6, and 8 port versions DLX and 4 and 6 port versions full size hardened adapters; the housing is available in 2 colors, black and gray.The terminal is designed for use in wall, pole or handhole applications.The closure has a maximum capacity of 24 splices, 2 trays of 12 splices each and contains an additional tray for fiber storage. The terminal housing provides loop storage for microsheath or loose tube cable.The Mini-OTE 200 allows for butt configurations with 4 wrap-around ports for multiple combinations of looped feeder cable (Ø 4 - 15 mm) and branch-off cable (Ø 4 - 9 mm) where the feeder cables are positioned at the outside ports and the branch-off cables at the inside ports. TENIO cable attachment is included as well as an external cable fixation integrated on the housing to absorb external forces on the cable.1.2Cable typesThe Mini-OTE 200 is designed for microsheath or loose tube cables with an outside diameter up to 15 mm, and flat cable:Feeder cable Ø 4 -15 mmBranch off cableØ 4 - 9 mm and flat (4.5x8.1 mm)Fiber types include single fiber 250micron.1.3Symbols for this guideMini-OTE 200I N S T A L L A T I O N I N S T R U C T I O NMini-OTE 200TC-1334-IPRev A, Mar Socket wrench 8 ( maximum outside Ø15mm) (mounting closure to wall)Socket wrench 1/4’’ (hose clamps)Phillips screw driverItem #Description1Mini-OTE200 enclosure: DLX or full size hardened adapters 2Point-to-point module Splitter module(More details, check ordering guide/ kit content)3Raster with tube guidance + storage lip 4Raster with 3 blind plugs 5Raster with ringsItem #Description 1Extra CTU 2Gel inlet 3Pole mounting kitItem #Description 6CTU 7Hose clamps 8Tie wrap 9Foam strip 10Wall mounting kit2 Tools required3Part list4Supplementary kit1345678910Scissors, Cutting pliersStripping tools, shaving tools, cleaning alcohol and other tools required to prepare cables1325.1Slide in moduleOpen protection cover by pulling (see arrows) and hinge protection cover downwards.Locking features to lock the module in the top cover are encircled on the picture.Slide module in top cover on the position (front or back) corresponding to the ports need to be connected (see table).Visually check through openings in the cover of the module if hooks are well locked. Check during and after installation of the module.5Installation splitter/point-to-point moduleDLXFull size hardened adaptersFront positionBack positionFront positionBack positionPoint-to-point module (port 1-4)Point-to-point module (port 5-8)Point-to-point module (port 1-3)Point-to-point module (port 4-6)Splitter module (1x4) (port 1-4)Point-to-point module (port 5-6)Splitter module (1x4) (port 1-4)Splitter module (1x4) (port 5-8)Splitter module (1x8) (port 1-8)Fiber color code (standard international sequence):Port 1: blue - port 2: orange - port 3: green - port 4: brown - port 5: slate - port 6: white - port 7: red - port 8: blackIn some countries coding can differ in which case refer to standard practice at customer.iHinge protection coverBack positionFront position5.2 Connect connectors to DLX adaptersRemove the dust caps of the adapters and the connectors that need to be connected. Connect the connectors to the corresponding adapters respecting the color code and cross-over bend: connectors coming from the left side of the module go to the adapters on the right side (black arrow). Connectors coming from the right side of the module go to adapters on the left side (white arrow). Make sure the orientation of the1x8 splittercentral adapter is positioned under the hook on the module. Otherwise, the pigtail can be squeezed between the hook on the module and the protection cover when closingthe protection cover.5.3 Connect connectors to full size hardened adaptersRemove the dust caps of the adapters and the connectors that need to be connected. Connect the connectors to the corresponding adapters5.4 Bring fibers to the organizerFeed pigtails through slit in the organizer and push tube until the stop. There are 2 positions for the tubes on top of each other. First, use bottom position, secondly use top position.5.5 Close protection coverClose protection cover. Snap hooks.Strip pigtails as marked on picture (2-3 cm above tube end/stop) and route 250µ fiber to top splice tray in the other part of the closure. Fiber picker available in protection cover.Fiber picker.6.2.2Central strength member6.1Loop capacityMake a window cut (see table). Make sure oscillation point is in the middle. Take out feeder tube and store other tubes in basket under organizer as 6.2 Cable retention (TENIO CTU)6.2.1CTU kit content6Cable preparation#LT (to store)Ø LT (mm)Window cut (m)43 1.35<= 5 2.4 2.17 2.4 1.711 2.3 1.5Microsheath- 2.130m m6-10-->60mm 10-13-->70mm 13-16-->80mm 2-6-->50mm213234516.2.3 Dual strength memberRemove one strength member and attach CTU to the side of the remaining strength member. Follow the same instructions to attach the CTU as describe under 6.2.2 Central strength member.6.2.4 Coated strength memberRemove coating around strength member over a length between 15mm and 20mm and follow the same instructions to attach the CTU as describe under 6.2.2 Central strength memberClean strength member, remove all grease.i80 mm341223416.2.5 Aramid yarn6.3 Insert feeder loop to storage areaPush one CTU in the holder (left position), take out feeder tube and roll up feeder loop under organizer. Push other CTU in the holder (right position). Other option is to make a loop of Ø130 mm (use tie wraps) and push loop under organizer.Feeder cables are positioned on the outside gel ports. Branch cables on the inside gel ports.Do not insert both CTU’s before loop is stored under the basket. Kinks in the tubes can occur.!6.4 Gel containmentContainment rings are required to contain gel properly. If the cable is too small, the gel inlet needs to be used instead of the rings. For flat cable no containment rings nor gel inlet is required. See table to select proper containment:None Small containment rings Large containment rings Gel InletFeeder cable (Ø 4-15 mm)Ø 12.1 - 15 mm-Ø8.5 - 12 mmØ4 - 8.4 mm Branch off cable (Ø 4-9 mm)Ø 7.1 - 9 mmØ 4 - 7 mm--Flat cable (4.5x8.1 mm) 4.5x8.1 mm---Small containment rings Large containment rings Gel Inlet Click gel inlet around the cableContainment ringsBreak off small containment rings to contain branch off cables with a diameter of Ø 4 - 7 mm or break off large containment rings to contain feeder cables with a diameter of Ø 8.5 - 12 mm. Push ring over the cable in cavity above and under gel.Gel InletUse gel inlet for feeder cables with diameter Ø 4 - 8.4 mm. Click gel inlet around the cable. Click hard plastic ring in cavity above and under gel.6.5 Securing cableCut a piece of foam (enough to make 1 tour around the cable). If cable is thicker than Ø10 mm, secure the cable to the closure with a hose clamp, if the cable is smaller than Ø10 or if it is a flat cable, secure the cable to the closure with a tie wrap.Hose clamp Tie wrap> Ø10 mm< Ø10 mmFlat Cable6.6 Install tube guidanceBreak off tube guidance clips and install one for the loop (for microsheaths and for loose tubes) and put the two others in the organizer as tube holder.7.1 Organizer7 Splice feeder to splitter/point to point moduleFEEDERFEEDERBRANCHBRANCHA B BCA7.2 End cutTake out 1 tube before storing the loop under the basket and cut the feeder tube at 1 end (right side). Put a mark on the tube in the marking area (250 area) and strip tube to this point (10 -11cm from jacket end). Bring feeder fibers to the tray where the fibers from the connectors are stored and make fusion splice. Store fiber over-length and store SMOUV(S) as standard practice.7.3 Mid cutPut a mark on both sides of the tube in the marking area (250 area) and shave the tube up to both marks (10 - 11 cm from jacket end). Take out required feeder fibers and cut in the middle. Bring feeder fibers to the tray where the fibers from the connectors are stored and make fusion splice. Store fiber over-length and store SMOUV(S) as standard practice.8.1 Prepare cableRemove jacket over 1m30 (1m fiber on tray). Install cable termination unit (CTU) as described in section 6.2 and attach in closure. Add containmentfollowing table in section 6.4. Secure cable with foam and tie-wrap or hose clamp to closure (section 6.5).Maximum diameter of the tube is Ø3mm.8.2 Connect branch cable to feeder cableStrip tubes in marked area (250 area) and bring required fibers to second tray. Use inside slots [B] for branch cable. Bring feeder fibers (tubes already taken out before storing loop under basket) to second tray. Make fusion splice, store SMOUV(S) and over-length as standard practice.8Branch cable BInsert blind plugs in empty gel ports. Small blind plugs are for the 2 gel ports in the middle. Thick blind plug is for empty gel ports at the outside. Store fiber picker back at location in protection cover.Make sure the seal area is clean and close the 6 latches.Secure bolt between cables.9 Close the closure10.1 Wall mountingUse wall mounting kit to mount closure to the wall. Use a socket wrench (8) to secure bolts. Attention: socket wrench outside diameter can only be 15mm to make sure it fits trough the holes between the cables.10.2 Pole mountingUse supplementary pole mounting kit for pole mounting. Secure brackets with a Phillips screw driver. Pull a strap through the openings and mount the closure to the pole.10Mounting the closure Use the holes in the bracket that are out ofthe center. Use plastic rib on the closure as guidanceto fix the bracket to the closure.i © 2017 CommScope, Inc. All rights reserved. All trademarks identified by ® or ™ are registered trademarks or trademarks, respectively, of CommScope, Inc.This document is for planning purposes only and is not intended to modify or supplement any specifications or warranties relating to CommScope products or services.This product is covered by one ore more U.S. patents or their foreign equivalents. For patents, see:/ProductPatent/ProductPatent.aspx.To find out more about CommScope® products, visit us on theweb at For technical assistance, customer service, or to report anymissing/damaged parts, visit us at:/SupportCenter。

ROHM P04SCT4018KE-EVK-001 第4代SiC MOSFET半桥评估板双脉冲测试模

2022. Sep65UG040E Rev.001 Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Getting Started>Table of Contents•Outlines•Simulation Circuit•Simulation Settings •Component List•PCB Pattern Parasitic Inductors •Analytical ToolsPlease visit ROHM Solution Simulator page•Hands-On User’s Manual Link•Tutorial Short Videos availableHow to use ROHM Solution Simulator(https:///solution-simulator)2022. Sep65UG040E Rev.001Figure 1. P04SCT4018KE-EVK-001This simulation circuit provides the double pulse test simulation environment of P04SCT4018KE-EVK-001, ROHM’s 4th Generation SiC MOSFET Half Bridge Evaluation Board“. The simulation circuit is composed of the detailed simulation model with the circuit board parasitic inductance to achieve higher switching waveform simulation accuracy.Features•Double pulse test circuit (High-side switching)•4th generation SiC MOSFET SCT4018KE + gate driver IC BM61S41RFV-C.•Device equivalent circuit model of the components are used for simulation accuracy. •Parasitic inductors of PCB patterns are modelled and applied to the simulation circuit.•Vgs, VDC, snubber circuit constants, etc. can be modified.•Approx. simulation elapsed time is 2min30s.Applications•By simulating and verifying the operating conditions and circuit constants of drive circuits, etc., the workload of hardware evaluation can be reduced.•By extracting the parasitic L of the pattern from the PCB layout and adding it to the circuit for simulation, it is possible to improve the problem before prototyping.•Simulation with the EVK detailed model may help to analyze the cause of noise surge surges observed in the hardware evaluation.Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model <Outlines>Note) For more details of P04SCT4018KE-EVK-001, please refer to the following documents.4th Generation SiC MOSFET Evaluation Board Product Specifications.pdf4th Generation SiC MOSFET Evaluation Board User’s Manual.pdf2022. Sep65UG040E Rev.001ParametersDescriptionsDefaultSimulationSetting RangeVDC DC Voltage 800 V HS_VCC2, LS_VCC2Gate drive positive voltage18 V 0 to 25 V HS_VEE, LS_VEE Gate drive negative voltage0 V 0 to 4 VTjQ51, Q151 Device Junction Temperature 25 °C HS_VPULSEHigh-side pulse period 10 μs Fixed High-side pulse width4.9 μsLS_VPULSE “L” (DC)Table 1. Parameter SettingsFigure 2. Simulation CircuitDouble Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model <Simulation Circuit>VDCD53VS1C66U2Q51C65HS_VPULSED54D57D58R74R75R76C302C303R307R308C301L1C64ep2q3ep2q4i2q1U102LS_VPULSEVS2HS_VCC2HS_VEEC59LVDD153R173D154C164LS_VCC2LS_VEEC159Q151C165D157D158R174R175R176i2q2C51C151P04SCT4018KE-EVK-001Simulation ModelLP2LLSVCC2LHSVCC2LP1LP3LP4R55R56LP5LP6LP7LP8LP9LP10R73LP11LP12LP13LP14C166LP15R155R156LP16LP17LP18LP19LP20LP21LP22LP23LP24LP25LP26LP27LP28LP29R321LP30LP31LP322022. Sep65UG040E Rev.001 Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Simulation Settings>Figure 3. Simplified Gate Drive Circuit (common for high-side and low-side)Figure 4. SiC MOSFET Vgs VoltageSiC MOSFETGate voltageSiC MOSFETDS voltageGDICGND2 voltage VEE = 2VVCC2 = 18VGDICVCC2 voltage1.Gate drive voltage VgsFigure 3 shows a simplified gate driver circuit, and Figure 4 shows an example of the Vgs waveform. The voltage source VEE gives the voltage of the DS pin of the SiC MOSFET with respect to the VEE2 voltage of the gate driver IC. The voltage source VCC2 gives the supply voltage VCC of the gate driver IC with respect to the DS pinvoltage. As a result, the gate voltage Vgs of the SiC MOSFET is VCC for 'H' voltage and (-VEE) for 'L' voltage. Set HS_VCC and HS_VEE for the high-side circuit, and LS_VCC and LS_VEE for the low-side circuit, respectively.2.Gate Drive Pulse timingVoltage source ‘HS_VPULSE’ generate the gate drive pulse timing. The period T = 5μs and the pulse width = 2.5μs. The actual gate drive pulse output is at the ‘out’ pin of BM61S41RFV-C, the gate driver IC.VgsVCC2=18VVEE=2V+++GDICSiCMOSFETSVCC2GATEVEE22022. Sep65UG040E Rev.001Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model <Simulation Settings>ing Property EditorTo open the Property Editor, right-click on a component and select "Properties" from the pull-down menu. Figure 5 shows an example of the Property Editor. You can browse the parameters of the component from the Property Editor.Components shown in blue have “tunable" parameters, and you can change the parameters in the white text box in the Property Editor. Apply the values within the displayed tolerance range.Figure 5. Property Editor Examples(a) Capacitor (b) Inductor2.‘USE_INITIAL_VOLTAGE’ and ‘USE_INITIAL_CURRENT’The capacitor property 'USE_INITIAL_VOLTAGE' and the inductor property 'USE_INITIAL_CURRENT' are used to improve the convergence of thesimulation and speed up the simulation. Initial voltage or initial current value will be applied to the component as the initial condition. It will improve simulation convergence.When changing simulation parameters, the initial voltage and the initial current should be revised.Table 2 shows the recommendation of the initial voltage and the initial current.Symbol Initial Voltage Recommendation C64, C164(-HS_VEE), (-LS_VEE)C66, C166(HS_VEE+HS_VCC2), (LS_VEE+LS_VCC2)C59, C159HS_VEE, LS_VEEC65, C165VDC C302, C303(VDC/2)C301VDCTable 2. Initial Voltage Recommendation2022. Sep65UG040E Rev.001Note) We have not been able to confirm operation with all combinations. Please read the disclaimer carefully.Symbol Part Number DeviceQ51, Q151SCT4018KE 4G-SiC MOSFET, 1200V, 18mohm D53, D54, D153, D154RB160VAM-60Schottky Barrier Diode D57, D58, D157, D158RFN1LAM7SSuper Fast Recovery DiodeU2, U102BM61S41RFV-C 1ch Gate Driver Providing Galvanic IsolationTable 4. Power Device / Gate Driver IC Component ListDouble Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model <Component List>SymbolR value [ohm]Tun-able CommentsR55, R155 3.3✓Gate resistorsR56, R1560✓R73, R173 4.7k R74, R75, R76, R174, R175, R17610✓RCD Snubber resistors R307, R3081M C Snubber resistors R3210.1mShunt resistorTable 6. Resistor Component ListPart Number of Q51 and Q151 are selectable from the property editor.The list of the part number is shown below.To change the MOSFET, see instruction ‘How to change MOSFET model’or refer to the hands-on manual from the link on Page 1.Symbol Part Number Features Q51, Q151SCT4018KE*1200V, 18mohm SCT4036KE1200V, 36mohm* Default device1. Right-click on the device2. Select “Properties”3. Pull down “SpiceLib Part”4. Select the productHow to change MOSFET Model1234Table 5. SiC MOSFET Part Number ListNote) The value is constant unless otherwise specified as ‘Tunable’.2022. Sep65UG040E Rev.001Note) We have not been able to confirm operation with all combinations. Please read the disclaimer carefully.Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model <Component List>SymbolCapacitor ValuesSimulation Settings DescriptionsC [F]ESR [ohm]ESL [H]Tun-ableInitial Voltage [V]Tun-ableUse Initial VoltageC51, C1510.1μ19.8m 0.37n 0C64, C1640.1μ19.8m 0.37n 0✓✓C66, C1660.1μ19.8m 0.37n 18✓✓C59, C159 4.7μ 3.2m 0.48n 0✓✓C65, C16533n12m0.65n✓800✓✓RCD Snubber capacitorsC302, C3030.47μ8.4m 0.65n ✓400✓✓ C Snubber capacitorsC30110μ9.9m11n✓800✓✓Table 8. Capacitor Component ListSymbolInductor ValuesSimulation SettingsDescriptionsL [H]PAR_RES [ohm]SER_RES [ohm]PAR_CAP[F]Tun-able Use Initial current= 0 OptionL1250μ51k0.132.124p✓✓DPT Inductive Load Table 7. Inductor Component ListFigure 5. Inductor ModelP1P2L SER_RESPAR_RESPAR_CAPP1P2ESLESRCFigure 6. Capacitor ModelNote) Refer to Figure 5 for the model composition.Note) The value is constant unless otherwise specified as ‘Tunable’.Note) Refer to Figure 6 for the model composition.Note) The value is constant unless otherwise specified as ‘Tunable’.2022. Sep65UG040E Rev.001Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model <PCB Pattern Parasitic Inductors>SymbolInductor ValuesSim Settings SERL [nH]SERR [mohm]Tun-able Initial Current = 0 OptionLP10.4205✓LP2 6.38231✓LP3 2.90012✓LP4 1.0325✓LP5 2.7077✓LP6 2.58315✓LP7 4.83225✓LP8 2.58310✓LP90.9365✓LP10 5.21020✓LP110.7964✓LP12 6.39032✓LP13 5.5816.5✓LP140.9816✓LP15 2.9297✓LP161.9389✓Table 9. EVK PCB Pattern Parasitic Inductor modelSymbolInductor Values Sim Settings SERL [nH]SERR [mohm]Tun-able Initial Current =0 OptionLP17 5.22026✓LP18 2.5259✓LP19 1.0695✓LP20 4.0228✓LP21 5.741133✓LP22 4.781165✓LP23 4.96717✓LP240.8563✓LP257.00028✓LP267.00028✓LP27 1.2122✓LP280.5757✓LP29 1.34721✓LP30 3.89166✓LP31 1.28768✓LP320.30616✓P1P2SERLSERR100ohmFigure 7. Parasitic L modelNote) Refer to Figure 7 for the model composition.Note) The value is constant unless otherwise specified as ‘Tunable’.Note) The inductor models are defined from the analysis of the PCB pattern design data and the accuracy is not guaranteed. LP1 through LP32 are PCB pattern inductor models.These are defined from the electro-magnetic analysis of the PCB pattern layout and applied to the simulation circuit as discrete components. Figure 7 shous the model equivalent circuit. The resister of 100 ohm in parallel is for stabilizing simulation.You can modify these inductors, for example, referring to the layout design constraints to relatively evaluate how the pattern layout would affects the switching behaviors.2022. Sep65UG040E Rev.001loss_out t =v t ×i_sense tloss_integ_out t =න0tloss_out t dt* v t : voltage difference between p1 and p2Analytical tools are used in the simulation circuit for current sensing and device loss calculation.Note) The Loss_calc component is a utility module to support power loss calculation, and does not affect the simulation results of circuit operation or performance.Double Pulse Test Simulation with P04SCT4018KE-EVK-001 Simulation Model<Analytical Tools>Figure 8. Current to Continuous QuantityFigure 9. Loss_Calc31.Current Sensing ToolThe component ‘Current to Continuous Quantity’ outputs the current flow ‘p1’ through ‘p2’ (See Figure 8.)It is used to measure the drain current of the SiC MOSFET.2.Device Loss Calculation ToolThe component ‘Loss_Calc3’ calculates the voltage difference between ‘p1’ and ‘p2’, and outputs the products of the voltagedifference and ‘i_sense’ current input as ‘loss_out’ and its integration as ‘loss_integ_out’ (See Figure 9.)NoticeROHM Customer Support System/contact/Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact us.N o t e sThe information contained herein is subject to change without notice.Before you use our Products, please contact our sales representative and verify the latest specifica-tions :Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.Examples of application circuits, circuit constants and any other information contained herein areprovided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.The technical information specified herein is intended only to show the typical functions of andexamples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.The Products specified in this document are not designed to be radiation tolerant.For use of our Products in applications requiring a high degree of reliability (as exemplifiedbelow), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.Do not use our Products in applications requiring extremely high reliability, such as aerospaceequipment, nuclear power control systems, and submarine repeaters.ROHM shall have no responsibility for any damages or injury arising from non-compliance withthe recommended usage conditions and specifications contained herein.ROHM has used reasonable care to ensur e the accuracy of the information contained in thisdocument. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.Please use the Products in accordance with any applicable environmental laws and regulations,such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.W hen providing our Products and technologies contained in this document to other countries,you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.This document, in part or in whole, may not be reprinted or reproduced without prior consent ofROHM.1) 2)3)4)5)6)7)8)9)10)11)12)13)。

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Features
◆ Bi-directional crowbar transient voltage protection ◆ High surge capability ◆ High off-state impedance ◆ Low leakage current ◆ Low on-state voltage ◆ Short-circuit failure mode
DO-214AA(SMB)
Main Application
BORN’s thyristor surge protector devices are degsn ied to help protect sensitive telecommunication equipment from the hazards caused by lighning ,power contact,and power induction. These devices enable equipment to comply with various regulatory requirements including GR 1089,ITU K.20,K.21and K.45,IEC 60950,UL 60950,and TIA-968-A(formerly known as FCC Part 68).
Typical application including:
● Central office switching equipment. Analog and digital linecards(xDSL,T1/E1,ISDN……)
● Customer Premises Equipment(CPE)such as phones, fax machines,modems,POS terminals, PBX
systems and caller ID adjunct boxes.
● Primary protection modules including Main Distribution Frames(M DF),building entrance
equipment and station protection modules.
● Access network equipment such as remote terminals,line repeaters,multiplexers,cross-connects,WAN equipment,Network Int erface Devices(NID). ● Data lines and security systems.
● CATV line amplifiers and power inserters. ● Sprinkler systems.
Electrcal Parameters (Tamb=25℃)
Part Number
V DRM
I DRM
V BO
I BO
V T
I T
C O
`I H
Min.
Max.
Max.
Max.
Max.
Max.
Max.
Min.
V
uA
V
mA
V
A
pF
mA BEP 4200SC
400
5
540
800
4
2.2
45
150
Eletrical Characteristics
V DRM
S t a nd -o ff v o l tag e,is m ea sur ed a t ID RM I H
Holding current.
V BO
B r e a ko v e r v o l tag e,is m ea sur ed a t 100V/μs. I BO
Breadover current.
C O
Off-state capacitance ismeasured in V DC =2V@1M HZ .
I T
ON-state current
I DRM Leakage current,is measured at VDRM.
V T
On-state voltage.
Part Numbering System
BEP 00SC
BEP 00
S
C
(A)
(B)
(C)
(D)
(A) SH’s Semiconductor Surge Arrester
(B) Series:0080,0300…3500,3800,4200etc. (C) Pake:SMB(DO-214AA)
(D) Rating Sure V oltage:C:6KV(10/700μs )
Electrical Characteristics Curves
Figure1 V-I Characteristics
Figure2 tr x td Pulse Wave-form
Figure 3 Normalized V S Change versus Figure 4 Normalized DC Holding Current Junction Temperature
BEP 00SC
Thermal Considerations
Package DO-214AA/SMB
Symbol
Parameter
Value
Unit
T J Operating Junction Temperature -40 to +150
℃
T S Storage Temperature Range -40 to +150
℃
R θJA
Junction to Ambient on printed circuit
90
℃/W
BEP 00SC
Dimension
Inches Millimeters M IN M AX M IN
M AX A 0.134 0.155 3.40 3.94 B 0.205 0.22 5.21 5.59 C 0.075 0.083 1.90 2.11 D 0.166 0.185 4.22 4.70 E 0.036 0.056 0.91 1.42 F
0.073 0.087 1.85 2.2 G 0.002 0.008 0.05 0.20 H 0.077 0.094 1.95 2.40 J
0.043 0.053 1.09 1.35 K 0.008 0.014 0.20 0.35 L
0.039
0.049
0.99
1.24
Solder Reflow Recommendations
●Recommended reflow methods: IR, vapor phase oven, hot air oven, wave solder. ●The device can be exposed to a maximum
temperature of 265°C for 10 seconds. ●Devices can be cleaned using standard industry methods and solvents.
Notes: If reflow temperatures exceed the
recommended profile, devices may not meet the performance requirements.
Product Dimensions
.079 (2.0)。