PD204-6B;中文规格书,Datasheet资料
ALD4704PBL,ALD4704SBL,ALD4704BSBL,ALD4704BPBL,ALD4704ASBL,ALD4704APBL, 规格书,Datasheet 资料
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
Operating Temperature Range
0°C to +70°C
0°C to +70°C
-55°C to 125°C
14-Pin Small Outline Package (SOIC)
With high impedance load, the output voltage of the ALD4704A/ ALD4704B/ALD4704 approaches within 1mV of the power supply rails. This device is designed as an alternative to the popular J-FET input operational amplifier in applications where lower operating voltages, such as 9V battery or ±3.25V to ±5V power supplies are being used. The ALD4704A/ALD4704B/ALD4704 offers high slew rate of 5V/µs. It is designed and manufactured with Advanced Linear Devices' standard enhanced ACMOS silicon gate CMOS process, and it offers low unit cost and exceptional reliability.
PDZ5.6B,115;PDZ4.7B,115;PDZ4.7B,135;PDZ10B,115;PDZ18B,115;中文规格书,Datasheet资料
Product data sheet Supersedes data of 2002 Feb 182004 Mar 22Voltage regulator diodesPDZ-B seriesFEATURES•Total power dissipation: max. 400 mW•Small plastic package suitable for surface mounted design •Wide variety of voltage ranges: nominal 2.4 to 36 V (E24 range)•Tolerance approximately ±2%.APPLICATIONS•General voltage regulation.DESCRIPTIONLow-power general purpose voltage regulator diodes in a small plastic SMD SOD323 (SC-76) package.PINNINGPIN DESCRIPTION 1cathode 2anodeMARKINGORDERING INFORMATIONTYPE NUMBER MARKING CODETYPE NUMBER MARKING CODETYPE NUMBER MARKING CODETYPE NUMBER MARKING CODEPDZ2.4B Z0PDZ5.1B Z8PDZ11B ZG PDZ24B ZQ PDZ2.7B Z1PDZ5.6B Z9PDZ12B ZH PDZ27B ZR PDZ3.0B Z2PDZ6.2B ZA PDZ13B ZJ PDZ30B ZS PDZ3.3B Z3PDZ6.8B ZB PDZ15B ZK PDZ33B ZT PDZ3.6B Z4PDZ7.5B ZC PDZ16B ZL PDZ36BZUPDZ3.9B Z5PDZ8.2B ZD PDZ18B ZM PDZ4.3B Z6PDZ9.1B ZE PDZ20B ZN PDZ4.7BZ7PDZ10BZFPDZ22BZPTYPE NUMBER PACKAGENAME DESCRIPTIONVERSION PDZ2.4B to PDZ36B−plastic surface mounted package; 2 leadsSOD323Voltage regulator diodesPDZ-B seriesLIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).Note1.Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.THERMAL CHARACTERISTICSNote1.Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT I F continuous forward current −200mAI ZSM non-repetitive peak reverse current t p = 100 μs; square wave; T amb = 25 °C prior to surge see Table 2P tot total power dissipation T amb = 25 °C; note 1; see Fig.2−400mW T stg storage temperature −65+150°C T j junction temperature−150°CSYMBOL PARAMETERCONDITIONSVALUE UNIT R th(j-s)thermal resistance from junction to soldering point 130K/W R th(j-a)thermal resistance from junction to ambientnote 1340K/WVoltage regulator diodes PDZ-B seriesCHARACTERISTICSTable 1Total seriesT j = 25 °C unless otherwise specified.SYMBOL PARAMETER CONDITIONS MAX.UNITV F forward voltage I F = 10 mA; see Fig.30.9VI F = 100 mA; see Fig.3 1.1VI R reverse currentPDZ2.4B V R = 1 V50μAPDZ2.7B V R = 1 V20μAPDZ3.0B V R = 1 V10μAPDZ3.3B V R = 1 V5μAPDZ3.6B V R = 1 V5μAPDZ3.9B V R = 1 V3μAPDZ4.3B V R = 1 V3μAPDZ4.7B V R = 1 V2μAPDZ5.1B V R = 1.5 V2μAPDZ5.6B V R = 2.5 V1μAPDZ6.2B V R = 3 V500nAPDZ6.8B V R = 3.5 V500nAPDZ7.5B V R = 4 V500nAPDZ8.2B V R = 5 V500nAPDZ9.1B V R = 6 V500nAPDZ10B V R = 7 V100nAPDZ11B V R = 8 V100nAPDZ12B V R = 9 V100nAPDZ13B V R = 10 V100nAPDZ15B V R = 11 V50nAPDZ16B V R = 12 V50nAPDZ18B V R = 13 V50nAPDZ20B V R = 15 V50nAPDZ22B V R = 17 V50nAPDZ24B V R = 19 V50nAPDZ27B V R = 21 V50nAPDZ30B V R = 23 V50nAPDZ33B V R = 25 V50nAPDZ36B V R = 27 V50nA2004 Mar 225NXP SemiconductorsProduct data sheetVoltage regulator diodesPDZ-B seriesTable 2Per typeT j = 25 °C unless otherwise specified.TYPE NUMBERWORKING VOLTAGEV Z (V)at I Z = 5 mA DIFFERENTIAL RESISTANCEr dif (Ω)TEMP. COEFF. S Z (mV/K) at I Z = 5 mA (see Figs 4 and 5)DIODE CAP. C d (pF) at f = 1 MHz; V R = 0NON-REPETITIVE PEAK REVERSE CURRENT I ZSM (A) at t p = 100 μs;T amb = 25 °CMIN.MAX.MAX.at I Z (mA)MAX.at I Z (mA)TYP.MAX.MAX.PDZ2.4B 2.43 2.63 1 0000.51005−1.64508.0PDZ2.7B 2.69 2.91 1 0000.51005−2.04408.0PDZ3.0B 2.85 3.07 1 0000.5955−2.14258.0PDZ3.3B 3.32 3.53 1 0000.5955−2.44108.0PDZ3.6B 3.60 3.85500 1.0905−2.43908.0PDZ3.9B 3.89 4.16500 1.0905−2.53708.0PDZ4.3B 4.17 4.48600 1.0905−2.53508.0PDZ4.7B 4.55 4.75600 1.0905−1.43258.0PDZ5.1B 4.96 5.202500.56050.3300 5.5PDZ5.6B 5.48 5.731000.5505 1.9275 5.5PDZ6.2B 6.06 6.33800.5505 2.7250 5.5PDZ6.8B 6.65 6.93600.5405 3.4215 5.5PDZ7.5B 7.287.60600.5105 4.0170 3.5PDZ8.2B 8.028.36600.5105 4.6150 3.5PDZ9.1B 8.859.23600.5105 5.5120 3.5PDZ10B 9.7710.21600.5105 6.4110 3.5PDZ11B 10.7811.22600.51057.4108 3.0PDZ12B 11.7412.24800.51058.4105 3.0PDZ13B 12.9113.49800.51059.4103 2.5PDZ15B 14.3414.98800.515511.499 2.0PDZ16B 15.8516.51800.520512.497 1.5PDZ18B 17.5618.35800.520514.493 1.5PDZ20B 19.5220.391000.520516.488 1.5PDZ22B 21.5422.471000.525518.484 1.3PDZ24B 23.7224.781200.530520.480 1.3PDZ27B 26.1927.531500.540523.473 1.0PDZ30B 29.1930.692000.540526.666 1.0PDZ33B 32.1533.792500.540529.7600.9PDZ36B35.0736.873000.560533.0590.8/Voltage regulator diodes PDZ-B series GRAPHICAL DATAVoltage regulator diodes PDZ-B series PACKAGE OUTLINEVoltage regulator diodesPDZ-B seriesDATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DISCLAIMERSGeneral ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties,expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, including those pertaining to warranty, intellectual property rightsinfringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.NXP SemiconductorsCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outlinedrawings which were updated to the latest version.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@© NXP B.V. 2009All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands R76/05/pp9 Date of release: 2004 Mar 22 Document order number: 9397 750 12615分销商库存信息:NXPPDZ5.6B,115PDZ4.7B,115PDZ4.7B,135 PDZ10B,115PDZ18B,115PDZ6.8B,115 PDZ2.4B,115PDZ3.9B,115PDZ6.2B,115 PDZ4.3B,115PDZ4.3B,135PDZ36B,115 PDZ16B,115PDZ16B,135PDZ2.7B,115 PDZ15B,115PDZ12B,115PDZ3.3B,115 PDZ5.1B,115PDZ7.5B,115PDZ24B,115 PDZ3.6B,115PDZ8.2B,115PDZ27B,115 PDZ13B,135PDZ15B,135PDZ2.7B,135 PDZ22B,135PDZ13B,115PDZ20B,115 PDZ22B,115PDZ3.0B,115PDZ30B,115 PDZ9.1B,115PDZ11B,115PDZ33B,115。
PD204-6B中文资料
Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 1 of 7Technical Data Sheet3mm Silicon PIN Photodiode T-1PD204-6BFeatures․Fast response time ․High photo sensitivity ․Small junction capacitance ․Pb freeDescriptions․PD204-6B is a high speed and high sensitive PIN photodiode in a standard 3Φplastic package.The device is matched to infrared emitting diode.Applications․Automatic door sensor ․Copier․Game machineDevice Selection Guide ChipLED Part No.MaterialLens ColorPD Silicon Water clearPD204-6BAbsolute Maximum Ratings (Ta=25℃)Parameter Symbol RatingUnits Reverse Voltage V R 32 VOperating Temperature T opr-25 ~ +85 ℃Storage Temperature T stg-40 ~ +85 ℃Soldering Temperature T sol 260 ℃P c 150 mWPower Dissipation at(or below)25℃Free Air TemperatureNotes: *1:Soldering time≦5 seconds.Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 2 of 7Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 3 of 7PD204-6BElectro-Optical Characteristics (Ta=25℃)Parameter Symbol Condition Min Typ Max UnitRang Of Spectral Bandwidth λ0.5 --- 840 --- 1100nm Wavelength Of Peak Sensitivity λP --- --- 940 --- nm Open-Circuit Voltage V OC Ee=5mW/cm 2λp=940nm --- 0.42 --- V Short- Circuit Current I SC Ee=1mW/cm 2 λp=940nm --- 3.0 --- μA Reverse Light Current I L Ee=1mW/cm 2 λp=940nm V R =5V 1.0 3.0 --- μA Reverse Dark CurrentI DEe=0mW/cm 2V R =10V --- --- 10 nAReverse Breakdown Voltage B VR Ee=0mW/cm 2 I R =100μA 32 170 --- VTotal Capacitance C t Ee=0mW/cm 2V R =5V f=1MHz--- 5 --- pFRise Time t r --- 6 ---Fall Timet fV R =10VR L =1000Ω--- 6 --- nSPD204-6BEverlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 4 of 7Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 5 of 7PD204-6BReliability Test Item And ConditionThe reliability of products shall be satisfied with items listed below.Confidence level：90%Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 6 of 7PD204-6B Packing Quantity Specification2. When using this product, please observe the absolute maximum ratings and the instructionsfor using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolutemaximum ratings and the instructions included in these specification sheets.3. These specification sheets include materials protected under copyright of EVERLIGHTcorporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.Everlight Electronics Co., Ltd. http:\\ Rev 1.3 Page: 7 of 7。
PD204E-9S4,TR204E-9S4多功能电力仪表
PD204E-9S4,TR204E-9S4多功能电⼒仪表华仪电⼦
PD204E-9S4,TR204E-9S4多功能电⼒仪表华仪电⼦
PD204E-9S9(原型号：TR204E-9S9) PD204E-9S9A(原型号：TR204E-9S9A PD204E-9S9B(原型号：TR204E-9S9B)
PD204E-2S9(原型号：TR204E-2S9) PD204E-2S7(原型号：TR204E-2S7) PD204E-9S7(原型号：TR204E-9S7
PD204E-9S4K(原型号：TR204E-9S4K)
◆概述
多功能电⼒仪表是⼀种可编程测量、显⽰、数字通讯和电能脉冲变送输出等功能的多功能智能电表，能够完成电量测量、电能计时、数据显⽰、采集及传输，可⼴泛应⽤变电站⾃动化、配电⾃动化、智能建筑、企业内部电能测量、管理、考核。
测量精度为0.5级，采⽤MODBUS-RTU通讯协议实现，LED现场显⽰和远程RS-485数字通讯。
◆技术参数
◆接线说明
接线说明（以随机接线图为准！）
◆功能特点
◎集全⾯的三相交流电量测量、电能计量、综合显⽰、越限控制、电能脉冲输出、⽹络通讯于⼀体。
◎各种三相电量：相电压、线电压、电流、有功功率、⽆功功率、功率因数、等电量参数及专业的有功电能、⽆功电能计量等。
◎既可以作为盘装电表单独使⽤，也可以作为电⼒监控系统测控终端，实现电量采集和综合控制。
◎液晶LCD（黄绿⾊背光、⿊字）显⽰屏，满⾜新时代显⽰技术发展潮流，可同时显⽰多种电量信息，并允许在⾼光照环境中读表；⼴视⾓可视⾓度140度。
PD204_6B光敏二极管产品说明书
产品说明书3mm光敏二极管:PD204_6B ⏹特点․快速响应․高感光灵敏度․较小的结电容․无铅环保，符合RoHS标准⏹描述PD204_6B是一款高速高灵敏度的插脚式光敏二极管，采用3mm圆头感光结构，用环氧材料封装，黑色封装材料可对可见光进行有效滤除，对红外光均保持很高的感光灵敏度。
⏹应用․高速光学传感器․安防设备․照相、摄影设备․光电开关⏹封装尺寸1.正极2.负极注: 1. 所有尺寸单位为毫米(英寸)2. 未说明误差的尺寸为±0.25mm(0.01英寸)⏹极限参数(Ta=25℃)参数符号参数值单位反向电压VR30V耗散功率Pd150mW焊接温度Tsol260℃工作温度Topr-25~+85℃存储温度Tstg-40~+85℃Ambient Temperature Ta(°C)P o w e r D i s s i p a t i o n (m W )5020020406080100-20-401001501008060200600Wavelength(nm)R e l a t i v e S p e c t r a l S e n s i t i v i t y (%)Ta=25°40700800900100011001200⏹光电参数(Ta=25℃)参数符号条件最小典型最大单位光谱带宽λ0.5---840---1100nm 感光峰值波长λp ------940---nm 开路电压V OC Ee=5m W/cm 2λp=940nm ---0.32---V短路电流I SC Ee=5m W/cm 2λp=940nm ---60---μA反向亮电流I LEe=5m W/cm 2λp=940nm V R =5V5560---μA暗电流Id Ee=0m W/cm 2V R =10V------10nA反向击穿电压BV R Ee=0m W/cm 2I R =100μA 30------V 总计电容CtEe=0m W/cm 2V R =3V f=1MHZ ---12---pF 上升/下降时间t r /t fV R =10V R L =1K Ω25/25nS⏹光电特性曲线图.1耗散功率与环境温度图.2相对频谱灵敏度400Ambient Temperature Ta(°C)R e v e r s e D a r k C u r r e n t (n A )608010020101001000V =10V R1Reverse Voltage (V)T e r m i n a l C a p a c i t a n c e C t (p F )101000.1204060f=1MHzV =3V Ee=0mW cmR2/10Load Resistance R L ( )R e s p o n s e T i m e t r ,t f (u s )10310101010101010101-316012080402.55.07.5Ee(mW/cm )10.02V =5V Rλ=940nm图.3暗电流与环境温度图.4反向感光电流与辐射强度图.5结电容与反向电压图.6响应时间与负载电阻注意事项:1.我公司保留更改产品材料和以上说明书的权利，更改以上产品说明书恕不另行通知。
技术规格书 直流充电桩 智能充电 枪 v
智能充电24枪技术规格书直流充电桩技术规格书JDV24-480T18(智能充电24枪)聚能新能源·领先型绿色能源企业2017年09月智能充电24枪技术规格书目录一、主要技术标准 (3)二、产品配置及技术参数 (4)三、其他 (8)3.1外观结构 (8)3.2结构安装 (8)3.3电气接线 (9)智能充电24枪技术规格书一、主要技术标准标准号标准名称GB/T2421.1-2008电工电子产品环境试验概述和指南GB/T2423.1-2008电工电子产品环境试验第2部分：试验方法试验A：低温GB/T2423.2-2008电工电子产品环境试验第2部分：试验方法试验B：高温GB/T2423.4-2008电工电子产品环境试验第2部分：试验方法试验Db：交变湿热（12h+12h循环）GB/T2423.17-2008电工电子产品环境试验第2部分：试验方法试验Ka：盐雾GB/T2423.55-2006电工电子产品环境试验第2部分：环境测试实验Eh：锤击试验GB4028-2008外壳防护等级（IP代码）GB/T4797.5-2008电工电子产品自然环境条件降水和风GB/T13384-2008机电产品包装通用技术条件GB/T13422-2013半导体电力变流器电气试验方法GB17625.1电磁兼容限值谐波电流发射限值（设备每相输入电流≤16A）GB/Z17625.6电磁兼容限值对额定电流大于16A的设备在低压供电系统中产生的谐波电流的限制GB/T17626.2-2006电磁兼容试验和测量技术静电放电抗扰度试验GB/T17626.3-2006电磁兼容试验和测量技术射频电磁场辐射抗扰度试验GB/T17626.4-2008电磁兼容试验和测量技术电快速瞬变脉冲群抗扰度试验GB/T17626.5-2008电磁兼容试验和测量技术浪涌(冲击)抗扰度试验GB/T19826-2005电力工程直流电源设备通用技术条件及安全要求GB/T20234.1-2015电动汽车充电接口规范第1部分：通用要求GB/T20234.3-2015电动汽车传导充电用连接装置第3部分：直流充电接口GB/T27930-2015电动汽车非车载传导式充电机与电池管理系统之间的通信协议智能充电24枪技术规格书二、产品配置及技术参数2.1.产品简介聚能直流智能充电系统是开发适用于电动汽车快速充电设备。
BYV32EB-200,118;中文规格书,Datasheet资料
BYV32EB-200Dual rugged ultrafast rectifier diode, 20 A, 200 VRev. 04 — 2 March 2009Product data sheet 1.Product profile1.1General descriptionUltrafast dual epitaxial rectifier diode in a SOT404 (D2PAK) surface-mountable plasticpackage.1.2Features and benefitsHigh reverse voltage surge capability High thermal cycling performanceLow thermal resistance Soft recovery characteristic minimizes power consuming oscillationsSurface-mountable packageVery low on-state loss1.3ApplicationsOutput rectifiers in high-frequencyswitched-mode power supplies1.4Quick reference dataTable 1.Quick referenceSymbol Parameter Conditions Min Typ Max Unit V RRM repetitive peak reverse voltage--200VI O(AV)average output current square-wave pulse; δ=0.5;T mb≤115°C; both diodes conducting;see Figure 1; see Figure 2--20AI RRM repetitive peak reverse current t p=2µs; δ=0.001--0.2AV ESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins--8kV Dynamic characteristicst rr reverse recovery time I F=1A; V R=30V;dI F/dt=100A/µs;T j=25°C; ramp recovery; see Figure 5-2025nsI R=1A;I F=0.5A;T j=25°C; measuredat reverse current = 0.25 A; steprecovery; see Figure 6-1020nsStatic characteristicsV F forward voltage I F=8A; T j=150°C; see Figure 4-0.720.85V2.Pinning information[1]it is not possible to make a connection to pin 2 of the SOT404 package3.Ordering informationTable 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol1A1anode 1SOT404 (D2PAK)2K cathode [1]3A2anode 2mbKmounting base; cathodemb132sym125Table 3.Ordering information Type number PackageName DescriptionVersion BYV32EB-200D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads (onelead cropped)SOT4044.Limiting valuesTable 4.Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol ParameterConditionsMin Max Unit V RRM repetitive peak reverse voltage-200V V RWM crest working reverse voltage -200V V R reverse voltage DC-200V I O(AV)average output currentsquare-wave pulse; δ=0.5; T mb ≤115°C; both diodes conducting; see Figure 1; see Figure 2-20A I FRM repetitive peak forward currentδ=0.5; t p =25µs; T mb ≤115°C; per diode -20A I FSMnon-repetitive peak forward currentt p =8.3ms; sine-wave pulse; T j(init)=25°C; per diode-137A t p =10ms; sine-wave pulse; T j(init)=25°C;per diode-125A I RRM repetitive peak reverse currentδ=0.001; t p =2µs -0.2A I RSM non-repetitive peak reverse current t p =100µs-0.2A T stg storage temperature -40150°C T j junction temperature-150°C V ESDelectrostatic discharge voltageHBM; C = 250 pF; R = 1.5 k Ω; all pins -8kV5.Thermal characteristics6.CharacteristicsTable 5.Thermal characteristics Symbol ParameterConditionsMin Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base with heatsink compound; both diodes conducting -- 1.6K/W with heatsink compound; per diode; seeFigure 3-- 2.4K/W R th(j-a)thermal resistance from junction to ambientminimum footprint FR4 board -50-K/WTable 6.Characteristics Symbol Parameter ConditionsMin Typ Max Unit Static characteristicsV F forward voltage I F =8A; T j =150°C; see Figure 4-0.720.85V I F =20A; T j =25°C -1 1.15V I Rreverse currentV R =200V; T j =25°C -630µA V R =200V; T j =100°C-0.20.6mADynamic characteristics Q r recovered charge I F =2A; V R =30V;dI F /dt =20A/µs -812.5nC t rrreverse recovery timeI F =1A; V R =30V;dI F /dt =100A/µs; ramp recovery; T j =25°C; see Figure 5-2025ns I F =0.5A; I R =1A; measured at reverse current = 0.25 A; step recovery; T j =25°C; see Figure 6-1020nsV FRforward recovery voltageI F =1A; dI F /dt =10A/µs; see Figure 7--1V7.Package outlinePlastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)SOT404Fig 8.Package outline SOT404 (D2PAK)8.Revision historyTable 7.Revision historyDocument ID Release date Data sheet status Change notice SupersedesBYV32EB-200_420090302Product data sheet-BYV32E_SERIES_3 Modifications:•The format of this data sheet has been redesigned to comply with the new identityguidelines of NXP Semiconductors.•Legal texts have been adapted to the new company name where appropriate.•Package outline updated.•Type number BYV32EB-200 separated from data sheet BYV32E_SERIES_3BYV32E_SERIES_320010301Product specification-BYV32E_SERIES_2 BYV32E_SERIES_219980701Product specification-BYV32EB_SERIES_1 BYV32EB_SERIES_119960801Product specification--9.Legal information9.1Data sheet status[1]Please consult the most recently issued document before initiating or completing a design.[2]The term 'short data sheet' is explained in section "Definitions".[3]The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL .9.2DefinitionsDraft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequences of use of such information.Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.9.3DisclaimersGeneral — Information in this document is believed to be accurate andreliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure ormalfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmentaldamage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in theCharacteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unlessexplicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.9.4TrademarksNotice: All referenced brands, product names, service names and trademarks are the property of their respective owners.10.Contact informationFor more information, please visit: For sales office addresses, please send an email to: salesaddresses@Document status [1][2]Product status [3]DefinitionObjective [short] data sheet Development This document contains data from the objective specification for product development.Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.Product [short] data sheetProductionThis document contains the product specification.11.Contents1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .11.1General description . . . . . . . . . . . . . . . . . . . . . .11.2Features and benefits. . . . . . . . . . . . . . . . . . . . .11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4Quick reference data . . . . . . . . . . . . . . . . . . . . .12Pinning information. . . . . . . . . . . . . . . . . . . . . . .23Ordering information. . . . . . . . . . . . . . . . . . . . . .24Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .35Thermal characteristics . . . . . . . . . . . . . . . . . . .46Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .47Package outline. . . . . . . . . . . . . . . . . . . . . . . . . .68Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .79Legal information. . . . . . . . . . . . . . . . . . . . . . . . .89.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . . .89.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .89.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . .89.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . .810Contact information. . . . . . . . . . . . . . . . . . . . . . .8Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.© NXP B.V.2009.All rights reserved.For more information, please visit: For sales office addresses, please send an email to: salesaddresses@分销商库存信息: NXPBYV32EB-200,118。
IRLML2060TRPBF;中文规格书,Datasheet资料
1
03/09/12
/
IRLML2060TRPbF
Electric Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
PD - 97448A
IRLML2060TRPbF
HEXFET® Power MOSFET
VDS VGS Max RDS(on) max
(@VGS = 10V)
60 ± 16 480 640
V V m m
6 * '
Micro3TM (SOT-23) IRLML2060TRPbF
RDS(on) max
Conditions
VGS = 0V, ID = 250μA VGS = 10V, ID = 1.2A VDS = VGS, ID = 25μA VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125°C VGS = 16V VGS = -16V VDS = 25V, ID = 1.2A ID = 1.2A VDS = 30V VGS = 4.5V VDD = 30V ID = 1.2A RG = 6.8 VGS = 4.5V VGS = 0V VDS = 25V ƒ = 1.0MHz
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
10
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
PD69104B datasheet
2
W W W. Microsemi . CO M
AB SO L UT E M AXIM UM R AT ING S
P AC K AG E PIN O UT
VAUX3P3_INT
REG_EN_N / NC
Supply Input Voltage (VMAIN) Port_Neg[0..7] pins LED pins Port_Sense[0..7] pins QGND, GND pins VAUX5, DRV_VAUX5 All other pins Operating Ambient Temperature Range Maximum Operating Junction Temperature ESD Protection at all I/O pins Storage Temperature Range
1
PD69104B
TM ®
4 Port PSE PoE Manager
P RODUCTION D ATASHEET
TYPICAL POWER DISSIPATION INFORMATION
Rsense Power Dissipation: 0.36Ω x Iport 2 Rds_ON Power Dissipation: 0.3Ω x Iport Pport_AF = 15.4W ==> Port Power Dissipation @ Rsense = 37mW (320mA) Port Power Dissipation @ Rds_ON = 31mW (320mA) Pport_AT = 30W ==> Port Power Dissipation @ Rsense = 130mW (600mA) Port Power Dissipation @ Rds_ON = 108mW (600mA) Using Internal 3.3V regulator Typical PD69104B self power dissipation (including internal regulations) = 0.5W (50V) Typical PD69104B @ 4 x Port AF application power dissipation = 0.5W + 4 x 31mW + 4 x 37mW = 0.77W Typical PD69104B @ 4 x Port AT application power dissipation = 0.5W + 4 x 108mW + 4 x 130mW = 1.45W Using External 3.3V regulator Typical PD69104B self power dissipation (external 3.3V source) = 0.25W (50V) Typical PD69104B @ 4 x Port AF application power dissipation = 0.25W + 4 x 31mW + 4 x 37mW = 0.52W Typical PD69104B @ 4 x Port AT application power dissipation = 0.25W + 4 x 108mW + 4 x 130mW = 1.2W
（最新）PD20G电动机保护器说明书（含漏电闭锁）
PD20G系列微机监控电机保护装置使用手册USER’S MANUAL江阴东瑞电力仪表有限公司地址：江阴市澄山路188号邮编：214432电话：0510-******** 86276870传真：*************E-mail:*****************.cnhttp:// 1.概述PD20G系列微机监控电机保护器适用于AC380V、AC660V低压系统，作为低压异步电动机和增安型电动机的保护、监测和控制的新一代智能化综合装置。
有先进的电动机保护、监控功能，同时显示各项整定参数信息，并且采用现场总线，为现代化的设备管理带来很大的便利。
符合标准：GB3836.3-2000、GB14048.4-2003、IEC2552.特点●交流采样，测量A、B、C三相电流及控制回路电压●现场显示电动机运行状态，保存三次电动机故障跳闸记录●一路保护输出，一路可编程继电器输出●高亮LED显示，跟随电动机运行状态和用户要求实时显示●三相电流不平衡、断相、欠流、自启动等功能用户可取可舍●当电动机过流时过流灯（设置灯）闪烁告警，过流倍数越大，闪烁越快●故障定位明确，显示故障时的电压值或电流值，断相显示哪一相，电流不平衡显示大小两相●采用RS485通信总线，可广泛用于各种监控系统作为带有电机保护及控制的智能化监控单元（选择配置）●一路4-~20mA模拟量电流输出任意选择对应A、B、C三相电流之一（选择配置）●漏电保护、漏电闭锁等功能用户可根据需要增选配置3.主要功能保护功能：过流、欠流、堵转、断相、三相电流不平衡、短路、漏电（选配）等故障保护测量功能：三相电流、漏电电流和对地绝缘电阻的测量和显示通用功能：增安型电动机保护、三相异步电动机保护、馈线保护，三种保护装置通用通信功能：通过本保护器的RS485接口与上层系统通信。
总线接口支持参数设置、控制及监测等功能。
通信协议遵循Modbus-RTU标准。
一般采用RS485总线接口进行物理连接，通常上位机或PLC设备作为主站，本保护器作为子站。
2SA2060(TE12L,F);中文规格书,Datasheet资料
−0.4
−0.8 −1.2
−1.6
−2
−2.4
Collector-emitter voltage VCE (V)
VCE (sat) – IC
−1 Common emitter IC/IB = 30 Single nonrepetitive pulse
−0.1
−0.01
Ta = 100°C
−55 25
25 −55
10
1 −0.001
−0.01
Common emitter VCE = −2 V Single
nonrepetitive
pulse
−0.1
−1
−10
Collector current IC (A)
VBE (sat) – IC
−10 Common emitter IC/IB = 30 Single nonrepetitive pulse
1.0
Tj
150
°C
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCEO max
/
4
2009-12-21
2SA2060
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
NUF2042XV6中文资料
CIRCUIT DESCRIPTION
D1(0) 6
VBUS 5
D2(0) 4
RS
C1
C1
RS
1 D1(i)
2 GND
3 D2(i)
6 1
SOT−563 CASE 463A
MARKING DIAGRAM
xx M G G
1 xx = Specific Device Code
−
10 100
−
30
36
NUF2042XV6T1
5.25 5.6 6.8 8.0
−
10 100 37.6 42 56.4
1. Measured between pins 1, 3, 4, 6 and ground with pin 5 also grounded. 2. For other resistance value (e.g. 33 W), please contact your local ON Semiconductor sales representative.
E 1.10 1.20 1.30 0.043 0.047 0.051
e
0.5 BSC
0.02 BSC
L 0.10 0.20 0.30 0.004 0.008 0.012
HE 1.50 1.60 1.70 0.059 0.062 0.066
SOLDERING FOOTPRINT*
0.3 0.0118
1.35 0.0531
Implementation because the Small IC minimizes Parasitic Inductances
Typical Applications:
• USB Hubs • Computer Peripherals Using USB
产品说明书NXBNXBD柱上SF6
NXB/NXBD 柱上SF 6负荷开关产品说明书.目录04 1 概述05 2 依据标准06 3 主要技术参数07 4 开关特点及其结构配置性能07 4.1 开关特点08 4.2 结构配置性能10 5 配网自动化方案10 5.1 电压时间型方案10 5.2 电流计数型方案kV分界负荷开关11 5.3 1212 6 远程控制箱功能12 6.1 DTU131远程控制箱的功能特点13 6.2 FSC远程控制箱的功能特点远程控制箱的功能特点14 6.3 BF2-2G-0215 6.4 BF1-2-F控制器的功能特点16 7 电气接线原理图17 8 开关安装方式20 9 开关外形及安装尺寸图23 10 开关订货型号及说明型号说明23 10.1表1 控制箱型号及代码24 10.2表2 附件型号及代码25 10.3表3 典型配置表25 10.43NXB/NXBD柱上SF6负荷开关 I 主要技术参数4NXB 型SF 6负荷开关是一种新型的柱上开关设备，额定电压12～24 kV ，可开断负荷电流及关合故障电流，既适用于传统架空线路，也适用于带绝缘导线的架空线路。
可配置电流互感器（传感器）、电压互感器（传感器）及远程控制箱（含RTU ），既可实现多种的配网自动化方案，亦可逐步升级。
NXBD 型SF 6负荷开关实际上相当于一台柱上环网开关，由两台NXB 开关合成一体。
其电气参数与NXB 一致。
1 NXB17R |2 NXB24C |3 NXBD24C1 概述123概述 I NXB/NXBD 柱上SF 6负荷开关52 依据标准NXB/NXBD 柱上SF 6负荷开关 I依据标准1 NXB 剖面电气图 ｜2 NXBD 剖面电气图 ｜3 NXBD 负荷开关应用示意图b. 线路分支a. 一进一出变压器馈线c. 双电源自动投切变压器馈线d. 环网供电123132二工位三工位二工位三工位Sectors 柱上SF 6负荷开关符合以下标准：IEC 60265-1 高压开关第一部分：额定电压1 kV 以上至52 kV以下高压开关GB 3804 3-63 kV 交流高压负荷开关GB/T 11022 高压开关设备和控制设备标准的共同技术条件3 主要技术参数额定电压额定雷电冲击耐受电压（峰值）额定工频耐受电压（有效值）额定电流有功负载开断电流额定闭环开断电流（10次）额定短时耐受电流额定峰值耐受电流额定短路关合电流线路和电缆充电开断电流接地故障开断电流接地故障时线路和电缆充电开断电流主开关短路关合电流接地开关短路关合电流机械寿命（合-分次数）充气压力（+20℃）气体报警压力（+20℃）允许运行环境温度防护等级爬电距离重量项目相间及相对地隔离断口间相间及相对地隔离断口间主开关接地开关气体密度开关气体密度表低气压闭锁装置开关本体操作机构箱远程控制箱单位kVkVkVkVkVAAAkAkAkAAAAkAkA次数次数bar（abs）bar（abs）bar（abs）bar（abs）℃mmkg630630 A（400次）*63020 kA/4 s50505050285050500020001.4~1.51.21.21.1-40℃~+60℃IP67IP55620/960手动：82（NXB_C_）/141（NXBD_C_）电动：85（NXB_C_）/147（NXBD_C_）NXB17R_1275854248630630 A（100次）63020 kA/4 s50501031.5185031.5500020001.4~1.51.21.21.1-40℃~+60℃IP67IP55372手动：75（NXB_R_）电动：78（NXB_R_）NXB_C_ & NXBD_C_2412514565791275854248*：该单项型式试验报告为英文主要技术参数 I NXB/NXBD柱上SF6负荷开关64.1 开关特点■专门为现代的配电自动化系统而设计■开关箱本体采用3 mm不锈钢，操作结构箱采用耐腐蚀的铝合金并进行喷漆■箱体经过激光切割、数控折弯机折弯和机器人焊接等先进设备加工，确保箱体密封的可靠性■采用SF6作为灭弧和绝缘介质。
Everlight PD204-6B 3mm Photodiode Datasheet说明书
3mm Photodiode PD204-6BFeatures•Fast response time •High photo sensitivity •Small junction capacitance •Pb free•This product itself will remain within RoHS compliant version.DescriptionPD204-6B is a high speed and high sensitive PIN photodiode in a standard 3Φ plastic package.The device is Spectrally matched to visible and infrared emitting diode.Applications•Automatic door sensor •Copier•Game machineDevice Selection GuideChipMaterialsLens ColorSilicon BlackAbsolute Maximum Ratings (Ta=25℃)Parameter Symbol Rating UnitReverse V oltage V R32 V Operating Temperature T opr-25 ~ +85 ℃Storage Temperature T stg-40 ~ +85 ℃Soldering Temperature T sol 260 ℃Power Dissipation at(or below)25Free Air Temperature ℃P c150mWElectro-Optical Characteristics (Ta=25℃)Parameter Symbol Min. Typ. Max. Unit ConditionRange Of Spectral Bandwidth λ0.5840 --- 1100 nm ----- Wavelength Of Peak Sensitivity λP--- 940 --- nm -----Open-Circuit V oltage V OC--- 0.42 --- V Ee=5mW/cm2 λp=940nmShort- Circuit Current I SC--- 3.0 --- μA Ee=1mW/cm2 λp=940nmReverse Light Current I L 1.0 3.0 --- μA Ee=1mW/cm2 λp=940nmV R=5VReverse Dark Current I D--- --- 10 nA Ee=0mW/cm2 V R=10VReverse Breakdown V oltage V BR32 170 --- μA Ee=0mW/cm2 I R=100μATotal Capacitance C t--- 5 --- pF Ee=0mW/cm2 V R=5Vf=1MHzRise Time/ Fall Time t r/ / t f----- 6 ----- ns V R=10V R L=100ΩPackage DimensionNote: Tolerances unless dimensions ±0.25mmLabel Form Specification ■ Anti-electrostatic bagNotes1. Cead Forming⏹ During lead Rormation, the leads should be bent at a point at least 3mm Rrom the base oR the epoxy bulb.⏹ Cead Rorming should be done beRore soldering.⏹ Avoid stressing the CED pacQage during leads Rorming. The stress to the base may damage the CEDCs characteristics or it may breaQ the CEDs.⏹ Cut the CED lead Rrames at room temperature. Cutting the lead Rrames at high temperatures may cause Railure oR the CEDs. ⏹Hhen mounting the CEDs onto a PCB, the PCB holes must be aligned exactly with the lead position oR the CED. IR the CEDs are mounted with stress at the leads, it causes deterioration oR the epoxy resin and this will degrade the CEDs.2. Storage ⏹ The CEDs should be stored at 30°C or less and 70%RH or less aRter being shipped Rrom Everlight and the storage liRe limitsare 3 months. IR the CEDs are stored Ror 3 months or more, they can be stored Ror a year in a sealed container with a nitrogen atmosphere and moisture absorbent material. ⏹Please avoid rapid transitions in ambient temperature, especially, in high humidity environments where condensation can occur.3. Soldering ⏹ CareRul attention should be paid during soldering. Hhen soldering, leave more then 3mm Rrom solder joint to epoxy bulb,and soldering beyond the base oR the tie bar is recommended. ⏹Recommended soldering conditions:Hand SolderingDIP SolderingTemp. at tip oR iron300℃ Max. (30H Max.) Preheat temp.100℃ Max. (60 sec Max.) Soldering time 3 sec Max. Bath temp. & time 260 Max., 5 sec Max Distance 3mm Min.(From solderjoint to epoxy bulb)Distance 3mm Min. (From solderjoint to epoxy bulb)⏹ Recommended soldering proRile⏹ Avoiding applying any stress to the lead Rrame while the CEDs are at high temperature particularly when soldering. ⏹ Dip and hand soldering should not be done more than one time⏹ ARter soldering the CEDs, the epoxy bulb should be protected Rrom mechanical shocQ or vibration until the CEDs return to room temperature.⏹A rapid-rate process is not recommended Ror cooling the CEDs down Rrom the peaQ temperature.Although the recommended soldering conditions are speciRied in the above table, dip or hand soldering at the lowestpossible temperature is desirable Ror the CEDs.⏹Have soldering parameter must be set and maintain according to recommended temperature and dwell time in the solderwave.4. Cleaning⏹Hhen necessary, cleaning should occur only with isopropyl alcohol at room temperature Ror a duration oR no more thanone minute. Dry at room temperature beRore use.⏹Do not clean the CEDs by the ultrasonic. Hhen it is absolutely necessary, the inRluence oR ultrasonic cleaning on the CEDsdepends on Ractors such as ultrasonic power and the assembled condition. Hltrasonic cleaning shall be pre-qualiRied to ensure this will not cause damage to the CED5. Heat Management⏹Heat management oR CEDs must be taQen into consideration during the design stage oR CED application. The currentshould be de-rated appropriately by reRerring to the de-rating curve Round in each product speciRication.⏹The temperature surrounding the CED in the application should be controlled. Please reRer to the data sheet de-ratingcurve.6. ESD (Electrostatic Discharge)⏹Electrostatic discharge (ESD) or surge current (ELS) can damage CEDs.⏹An ESD wrist strap, ESD shoe strap or antistatic gloves must be worn whenever handling CEDs.⏹All devices, equipment and machinery must be properly grounded.⏹Hse ion blower to neutralize the static charge which might have built up on surRace oR the CEDs plastic lens as a result oRRriction between CEDs during storage and handing.7. Lther⏹Above speciRication may be changed without notice. ERERCIGHT will reserve authority on material change Ror abovespeciRication.⏹Hhen using this product, please observe the absolute maximum ratings and the instructions Ror using outlined in thesespeciRication sheets. ERERCIGHT assumes no responsibility Ror any damage resulting Rrom use oR the product which does not complywith the absolute maximum ratings and the instructions included in these speciRication sheets.⏹These speciRication sheets include materials protected under copyright oR ERERCIGHT corporation. Please donCtreproduce or cause anyone to reproduce them without ERERCIGHTCs consent.。
MBRB20200CTT4G;MBRB20200CTG;MBRB20200CTT4;中文规格书,Datasheet资料
1
TJ = 25C 2 1 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS VOLTAGE (V) 1
0.1 TJ = 25C
0.01 0 20 40 60 80 100 120 140 160 180 200 VR, REVERSE CURRENT (V)
Figure 1. Typical Forward Voltage (Per Leg)
MAXIMUM RATINGS (Per Leg)
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 134C) Per Leg Per Device Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = +137C) Per Leg Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Storage Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) 10 20 IFRM 20 IFSM IRRM Tstg TJ dv/dt 150 1.0 −65 to +175 −65 to +150 10,000 A A C C V/ms A Value 200 Unit V
PTB20046资料
e1Maximum RatingsParameterSymbolValueUnitCollector-Emitter Voltage V CER 50Vdc Collector-Base VoltageV CBO 50Vdc Emitter-Base Voltage (collector open)V EBO 4.0Vdc Collector Current (continuous)I C 0.7Adc Total Device Dissipation at T flange = 25°C P D 10Watts Above 25°C derate by 0.057W/°C Storage TemperatureT stg 150°C Thermal Resistance (T flange = 70°C)R θJC17.5°C/WPTB 200461 Watt, 1465–1513 MHzCellular Radio RF Power TransistorDescriptionThe 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.1 Watt, 1465–1513 MHz Class AB Characteristics18% Collector Efficiency at 1 Watt Gold MetallizationSilicon Nitride PassivatedPackage 2020120046L O TC OD EPTB 200462eZ SourceZ LoadElectrical Characteristics (100% Tested)CharacteristicConditionsSymbolMinTypMaxUnitsBreakdown Voltage C to E I B = 0 A, I C = 10 mA, R BE = 22 ΩV (BR)CER 50——Volts Breakdown Voltage C to E V BE = 0 V, I C = 10 mA V (BR)CES 50——Volts Breakdown Voltage E to B I C = 0 A, I E = 5 mA V (BR)EBO 45—Volts DC Current GainV CE = 5 V, I C = 1 Ah FE2050120—RF Specifications (100% Tested)CharacteristicSymbolMinTypMaxUnitsGain(V CC = 26 Vdc, P out = 1 W, I CQ = 40 mA, f = 1501 MHz)G pe 10.5——dB Power Output at 1 dB Compression(V CC = 26 Vdc, I CQ = 40 mA, f = 1501 MHz)P-1dB 2.5——Watts Collector Efficiency(V CC = 26 Vdc, P out = 1 W, I CQ = 40 mA, f = 1501 MHz)ηC 18——%Intermodulation Distortion(V CC = 26 Vdc, P out = 1 W(PEP), I CQ = 40 mA,IMD—-23—dBcf 1 = 1500 MHz, f 2 = 1501 MHz)Load Mismatch Tolerance(V CC = 26 Vdc, P out = 1 W, I CQ = 40 mA,Ψ——5:1—f = 1501 MHz—all phase angles at frequency of test)Impedance Data (data shown for fixed-tuned broadband circuit)(V CC = 26 Vdc, P out = 1 W, I CQ = 40 mA)FrequencyZ SourceZ LoadMHz RjX R jX 147710.42-1.498.6915.67148910.20-1.268.8416.0115019.87-1.059.0816.44Ericsson Components RF Power Products 675 Jarvis DriveMorgan Hill, CA 95037 USA Telephone: 408-778-9434Specifications subject to change without notice.LF© Ericsson Components AB 1994EUS/KR 1301-PTB 20046 Uen Rev. D 09-28-981-877-GOLDMOS (1-877-465-3667)e-mail: rfpower@ /rfpower。
P2042A资料
LCD Panel EMI Reduction ICFEATURES• FCC approved method of EMI attenuation• Provides up to 15 dB of EMI suppression• Generates a low EMI spread spectrum clock of the input frequency• 30 MHz to 110 MHz input frequency range• Optimized for 32.5MHz, 54MHz, 65MHz, and 108MHzpixel clock frequencies• Internal loop filter minimizes externalcomponents and board space• 8 selectable spread ranges, up to +/- 1.9% • SSON# control pin for spread spectrum enable and disable options• Low cycle-to-cycle jitter• 3.3V operating voltage• 16 mA output drives• TTL or CMOS compatible outputs• Ultra low power CMOS design• Supports most mobile graphic accelerator and LCD timing controller specifications• Available in 8 pin SOIC and TSSOPPRODUCT DESCRIPTIONThe P2042A is a selectable spread spectrum frequency modulator designed specifically for digital flat panel applications. The P2042A reduces electromagnetic interference (EMI) at the clock source which provides system wide reduction of EMI of all clock dependent signals. The P2042A allows significant system cost savings by reducing the number of circuit board layers and shielding that are traditionally required to pass EMI regulations.The P2042A uses the most efficient and optimized modulation profile approved by the FCC and is implemented in a proprietary all-digital method. The P2042A modulates the output of a single PLL in order to “spread” the bandwidth of a synthesized clock and, more importantly, decreases the peak amplitudes of its harmonics. This results in significantly lower system EMI compared to the typical narrow band signal produced by oscillators and most frequency generators. Lowering EMI by increasing a signal’s bandwidth is called “spread spectrum clock generation”.APPLICATIONSThe P2042A is targeted towards digital flat panel applications for Notebook PCs, Palm-size PCs, Office Automation Equipments, and LCD Monitors Figure 1 – P2042A Pin DiagramCLKINCP0CP1VSSVDDSR0ModOUTSSON#May, 2002 PulseCore – A Division of Alliance SemiconductorTable 1 - Modulation SelectionModulation Rate CP0 CP1 SR0Spreading Range (+/- %)32.5 MHz 54 MHz 65 MHz 81 MHz 108 MHz0 0 0 0.56 1.05 1.00 0.98 0.80 (Fin/40) * 62.49 KHz0 0 1 1.94 1.68 1.56 1.48 1.22 (Fin/40) * 62.49 KHz0 1 0 1.36 1.05 1.00 0.92 0.67 (Fin/40) * 62.49 KHz0 1 1 1.92 1.68 1.56 1.48 1.06 (Fin/40) * 62.49 KHz1 0 0 1.24 0.81 0.66 0.40 0.27 (Fin/40) * 62.49 KHz1 0 1 1.91 1.29 1.02 0.74 0.43 (Fin/40) * 62.49 KHz1 1 0 0.91 0.45 0.34 0.05 0.15 (Fin/40) * 62.49 KHz1 1 1 1.47 0.71 0.54 0.36 0.21 (Fin/40) * 62.49 KHz Pin DescriptionPIN # Name Type Description1 CLKIN I External reference frequency input.Connect to externally generatedreference signal.2 CP0 I Digital logic input used to select charge pump current (see Table 1). Thispin has an internal pull-up resistor.3 CP1 I Digital logic input used to select charge pump current (see Table 1). Thispin has an internal pull-up resistor.4 VSS P Ground Connection. Connect to system ground.5 SSON# I Digital logic input used to enable Spread Spectrum function (Active Low).Spread Spectrum function enable when low. This pin has an internal pull-low resistor.6 ModOUT O Spread Spectrum Clock Output.7 SR0 I Digital logic input used to select Spreading Range (see Table 1). This pinhas an internal pull-up resistor.8 VDD P Connect to +3.3VMay, 2002 PulseCore – A Division of Alliance SemiconductorSPREAD SPECTRUM SELECTIONTable 1 illustrates the possible spread spectrum options. The optimal setting should minimize system EMI to the fullest without affecting system performance. The spreading is described as a percentage deviation of the center frequency (Note: the center frequency is the frequency of the external reference input on CLKIN, Pin 1).Example: P2042A is designed for high resolution flat panel applications and is able to support panel frequencies from 30MHz to 110MHz. For a 65MHz pixel clock frequency, a spreading selection of CP0=0, CP1=1 and SR0=1 gives a percentage deviation of +/-1.56% (see Table 1). This results in frequency on ModOUT being swept from 64.03MHz to 65.98MHz. This particular example (see Figure 3) given here is a common EMI reduction method for notebook LCD panel and has already been implemented by most of the leading OEM and mobile graphic accelerator manufacturers.Figure 3 - P2042A Application Schematic for Mobile LCD Graphics ControllersMay, 2002 PulseCore – A Division of Alliance SemiconductorEMC SOFTWARE SIMULATIONBy using PulseCore Semiconductor, Inc.’s proprietary EMC simulation software – EMI-lator®, radiated system level EMI analysis can be made easier to allow a quantitative assessment on PulseCore’s EMI reduction products. The simulation engine of this EMC software has already been characterized to correlate with the electrical characteristics of PulseCore EMI reduction IC’s. Figure 4 Figure 1below is an example of the simulation result. Please visit our web site at for information on how to obtain a free copy and demonstration of EMI-lator®.Figure 4 - Simulation Result from EMI-lator r®May, 2002 PulseCore – A Division of Alliance SemiconductorABSOLUTE MAXIMUM RATINGSSymbol Parameter Rating UnitV DD, V IN Voltage on any pin with respect to GND -0.5 to +7.0 VT STG Storage Temperature -65 to +125 ºCT A Operating Temperature 0 to +70 ºCDC ELECTRICAL CHARACTERISTICSSymbol Parameter Min Typ Max Unit V IL Input Low Voltage GND – 0.3 - 0.8 V V IH Input High Voltage 2.0 - V DD + 0.3 V I IL Input Low Current (pull-up resistor oninputs SR0, 1 and CP0)- - -35 µAI IH Input High Current (pull-down resistor oninput SSON#)- - 35 µAV OL Output Low Voltage(VDD=3.3V, IOL = 20 mA)- - 0.4 VV OH Output High Voltage(VDD=3.3V, IOH = 20 mA)2.5 - - VI DD Static Supply Current - 0.6 - mAI CC Dynamic Supply Current(3.3V and 15 pF loading)9 16 22 mA V DD Operating Voltage 2.7 3.3 3.7 V t ON Power Up Time(First locked clock cycle after power up)0.18 mS Z OUT Clock Output Impedance 50 ΩAC ELECTRICAL CHARACTERISTICSSymbol Parameter Min Typ Max Unit f IN Input Frequency, P2042A 30 65 110 MHzt LH Note 1 Output Rise Time(0.8V to 2.0V)0.7 0.9 1.1 nst HL Note 1 Output Fall Time(2.0V to 0.8V)0.6 0.8 1.0 nst JC Jitter (cycle to cycle) - - 360 pst D Output Duty Cycle 45 50 55 % Note1: t LH and t HL are measured into a capacitive load of 15pFMay, 2002 PulseCore – A Division of Alliance SemiconductorMay, 2002 PulseCore – A Division of Alliance SemiconductorFigure 5 - Mechanical Package Outline (8 Pin SOIC)Figure 6 - Mechanical Package Outline (8 Pin TSSOP)L o t #INCHES MILLIMETERS SYMBOL MIN NOR MAX MIN NOR MAXA0.057 0.064 0.071 1.45 1.63 1.80 A10.004 0.007 0.010 0.10 0.18 0.25 A20.053 0.061 0.069 1.35 1.55 1.75 B0.012 0.016 0.020 0.31 0.41 0.51 C0.004 0.006 0.001 0.10 0.15 0.25 D0.186 0.194 0.202 4.72 4.92 5.12 E0.148 0.156 0.164 3.75 3.95 4.15 e0.050 BSC 1.27 BSC H0.224 0.236 0.248 5.70 6.00 6.30 L0.012 0.020 0.028 0.30 0.50 0.70 a0° 5° 8° 0° 5° 8° Note: Controlling dimensions are millimeters. INCHES MILLIMETERSSYMBOL MIN NOR MAX MIN NOR MAXA- - 0.047 - - 1.10 A10.002 - 0.006 0.05 - 0.15 A2 0.031 0.039 0.041 0.80 1.00 1.05 B0.007 - 0.012 0.19 - 0.30 C0.004 - 0.008 0.09 - 0.20 D0.114 0.118 0.122 2.90 3.00 3.10 E0.169 0.173 0.177 4.30 4.40 4.50 e0.026 BSC 0.65 BSC H0.244 0.252 0.260 6.20 6.40 6.60 L0.018 0.024 0.030 0.45 0.60 0.75 a0° - 8° 0° - 8° Note: Controlling dimensions are millimeters.ORDERING INFORMATIONOrdering Number Marking Package Type QTY / Reel TemperatureP2042A-08ST P2042A 8 PIN SOIC, TUBE 0°C TO 70°CP2042A-08SR P2042A 8 PIN SOIC, TAPE & REEL 2,500 0°C TO 70°CP2042A-08TT P2042A 8 PIN TSSOP, TUBE 0°C TO 70°CP2042A-08TR P2042A 8 PIN TSSOP, TAPE & REEL 2,500 0°C TO 70°C "Licensed under U.S. Patent Nos. 5,488,627 and 5,631,920”Preliminary data sheet. Specifications subject to change without notice.May, 2002 PulseCore – A Division of Alliance Semiconductor。
EN602041中文版
EN 60204-1机械电气系统安全需求旸致科技股份有限公司Sunreach Technology Co., Ltd. TEL:(04)24758336 FAX:(04)24758230目录第5章电源入线及切断装置 (4)5.1节电源入线 (4)5.2节外部接地系统 (4)5.3节电源断电装置 (4)5.4节防意外起动之切断装置 (5)5.5节个别电气设备的断电装置 (5)5.6节未经授权、意外及/或错误开启的保护 (5)第六章触电保护 (6)6.2节直接触电保护 (6)6.3节间接触电保护 (7)6.4节超低压保护(PELV) (7)第七章设备的保护 (7)7.2节过电流保护 (7)7.3节马达的过载保护 (8)7.4节异常温度 (8)7.5节电源中断或电压降低与随后电力恢复的保护 (8)7.6节马达过速度保护 (8)7.7节接地失效/残余电流保护 (8)7.8节相序保护 (8)7.9节因闪电及开关涌流而造成过电压的保护 (9)第八章等电位键结 (9)8.2节保护性键结电路 (9)第九章控制电路与控制功能 (10)9.1节控制电路电源 (10)9.2节控制功能 (10)9.3节保护互锁 (12)9.4节绝缘失效时的控制功能 (13)第十章操作者接口与机器外部之控制装置 (13)10.1节安装与位置 (13)10.2节按钮开关 (14)10.3节指示灯及显示 (14)10.4节照光式按钮开关 (14)10.5节旋转式控制装置 (15)10.6节启动装置 (15)10.7节紧急停止装置 (15)10.8节紧急切断装置 (15)10.9节显示装置 (15)第十一章电子设备 (15)11.3节可程序设备 (16)第十二章控制机构: 位置，安装与电气箱 (16)12.1节一般需求 (16)12.2节位置与安装 (16)12.3节保护等级 (17)12.4节电气箱，门及开孔 (17)12.5节控制机构的接近 (18)第十三章导线与电缆线 (18)13.2节导线 (18)13.3节绝缘 (18)13.4节电流承载量 (18)13.5节导线与电缆线电压降 (18)13.6节最小线径需求 (19)13.7节可挠性电缆线 (19)13.8节集电线、集电条与集电环组合 (19)第十四章配线实务 (20)14.1节连接与线路 (20)14.2节导线的辨认 (20)14.3节电气箱内配线 (21)14.4节电气箱外配线 (21)14.5节导线槽，接线盒及其它接线箱 (22)第十五章电动马达与相关设备 (23)15.1节一般需求 (23)15.2节马达外壳 (23)15.3节马达尺寸 (24)15.4节马达安装与隔间 (24)15.5节马达选用的准则 (24)15.6节机械性煞车保护装置 (24)第十六章附属设备及照明 (25)16.1节附属设备 (25)16.2节机器与设备的局部照明 (25)第十七章标志，警告标示及参考名称 (25)17.1 节一般需求 (26)17.2 节警告标示 (26)17.3 节功能辨认 (26)17.4 节控制设备的标示 (26)17.5 节参考名称 (26)第十八章技术文件 (26)18.1节一般通则 (27)18.3节文件需求 (27)18.4节基本数据 (27)18.5节安装图 (27)18.6节方块(系统)图与功能图 (28)18.7节电路图 (28)18.8节操作手册 (28)18.9节维修手册 (28)18.10节组件表 (28)第十九章测试与检查 (28)19.1 节一般需求 (28)19.2 节保护性键结电路的连续性 (28)19.3 节绝缘电阻测试 (29)19.4 节耐压测试 (30)19.5 节残存电压防护 (30)19.6 节功能性测试 (30)19.7 节重测 (30)附录一: 何谓IP保护等级 (31)附录二: 导线的等级 (31)第5章电源入线及切断装置5.1节电源入线1. 建议机器电控系统的电源供给为单一电源。
4-甲氧苯基β-D-吡喃葡萄糖苷-安全技术说明书MSDS
第一部分化学品及企业标识化学品中文名：4-甲氧苯基β-D-吡喃葡萄糖苷化学品英文名：substance-name-is-not-availableCAS No.：6032-32-2分子式：C13H18O7产品推荐及限制用途：工业及科研用途。
第二部分危险性概述紧急情况概述造成严重眼刺激。
GHS危险性类别严重眼损伤 / 眼刺激类别 2标签要素：象形图：警示词：警告危险性说明：H319 造成严重眼刺激●预防措施：—— P264 作业后彻底清洗。
—— P280 戴防护手套/穿防护服/戴防护眼罩/戴防护面具。
●事故响应：—— P305+P351+P338 如进入眼睛：用水小心冲洗几分钟。
如戴隐形眼镜并可方便地取出，取出隐形眼镜。
继续冲洗。
—— P337+P313 如仍觉眼刺激：求医/就诊。
●安全储存：—— P403+P233 存放在通风良好的地方。
保持容器密闭。
—— P405 存放处须加锁。
●废弃处置：—— P501 按当地法规处置内装物/容器。
物理和化学危险：无资料。
健康危害：造成严重眼刺激。
环境危害：无资料。
第三部分成分/组成信息√物质混合物第四部分急救措施急救：吸入：如果吸入，请将患者移到新鲜空气处。
皮肤接触：脱去污染的衣着，用肥皂水和清水彻底冲洗皮肤。
如有不适感，就医。
眼晴接触：分开眼睑，用流动清水或生理盐水冲洗。
如有不适感，就医。
食入：饮水，禁止催吐。
如有不适感，就医。
对保护施救者的忠告：将患者转移到安全的场所。
咨询医生。
出示此化学品安全技术说明书给到现场的医生看。
对医生的特别提示：无资料。
第五部分消防措施灭火剂：用水雾、干粉、泡沫或二氧化碳灭火剂灭火。
避免使用直流水灭火，直流水可能导致可燃性液体的飞溅，使火势扩散。
特别危险性：无资料。
灭火注意事项及防护措施：消防人员须佩戴携气式呼吸器，穿全身消防服，在上风向灭火。
尽可能将容器从火场移至空旷处。
处在火场中的容器若已变色或从安全泄压装置中发出声音，必须马上撤离。
OCP8164规格书中文版
推荐工作范围
符号 VCC
PLED
参数 电源电压
输出功率
85 ~ 265VAC 220VAC±15%
范围 10.0~15.0
≤ 15 ≤ 40
单位 V
W
FOP
工作频率
TA
工作环境温度
50
kHz
−40 ~ 85
°C
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Ver. 1.0 Oct. 16, 2013
OCP8164
非隔离降压 LED 恒流驱动器
非隔离降压 LED 恒流驱动器
应用信息
OCP8164 是一款集成了 500V MOSFET 高精度非隔离 LED 恒流驱动芯片，工作在电流临界连续模式，支持全电 压输入 AC85V~265V。OCP8164 采用 DIP8 封装形式，内部集成了 500V 开关，利用 CS 脚设定电流，OCP8164 内部 工作电流很小(大约 100uA)， 无需辅助绕组监测和供电，只需要很少的外围元器件既可优异的输出恒流精度，节约了 系统成本和体积。
VCC=14.5V ‐20℃ 0℃ 25℃ 50℃ 85℃
Temperature(℃)
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Ver. 1.0 Oct. 16, 2013
典型参数特征
（测试条件：如无特殊说明，TA =25℃，VCC=15V） LED电流 VS 电源电压 (PO=20W, VIN=220VAC)
LED Current(mA)
16
‐40℃
14
25℃
12
85℃
10
8
6
4
2
0
14 15 16 17 18 19 20
Input Clamp Voltage(V) 静态电流 VS 电源电压
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Technical Data Sheet 3mm Silicon PIN Photodiode T-1PD204-6BFeatures․Fast response time ․High photo sensitivity ․Small junction capacitance ․Pb free ․The product itself will remain within RoHS compliant version.Descriptions․PD204-6B is a high speed and high sensitive PIN photodiode in a standard 3Φplastic package. The device is matched to infrared emitting diode.Applications․Automatic door sensor ․Copier ․Game machineDevice Selection Guide LED Part No.PDChip MaterialSiliconLens ColorWater clearEverlight Electronics Co., Ltd. Device No：DPD-020-040http:\\ Prepared date：07-20-2005Rev 2Page: 1 of 7Prepared by：Jaine Tsai/PD204-6BPackage DimensionsNotes: 1.All dimensions are in millimeters 2.Tolerances unless dimensions ±0.1mmAbsolute Maximum Ratings (Ta=25℃)Parameter Reverse Voltage Operating Temperature Storage Temperature Soldering Temperature Power Dissipation at(or below) 25℃Free Air Temperature Symbol VR Topr Tstg Tsol Pc Rating 32 -25 ~ +85 -40 ~ +85 260 150 Units V ℃ ℃ ℃ mWNotes: *1:Soldering time≦5 seconds.Everlight Electronics Co., Ltd. Device No：DPD-020-040http:\\ Prepared date：07-20-2005Rev 2Page: 2 of 7Prepared by：Jaine Tsai/PD204-6BElectro-Optical Characteristics (Ta=25℃)Parameter Rang Of Spectral Bandwidth Wavelength Of Peak Sensitivity Open-Circuit Voltage Short- Circuit Current Reverse Light Current Reverse Dark Current Symbol λ0.5 λP VOC ISC IL ID Condition ----Ee=5mW/cm2 λp=940nm Ee=1mW/cm2 λp=940nm Ee=1mW/cm2 λp=940nm VR=5V Ee=0mW/cm2 VR=10V Ee=0mW/cm2 IR=100μA Ee=0mW/cm2 VR=5V f=1MHz VR=10V RL=1000Ω Min 840 ------1.0 --Typ --940 0.42 3.0 3.0 --Max 1100 --------10 Unit nm nm V μA μAnAReverse Breakdown VoltageBVR32170---VTotal Capacitance Rise Time Fall TimeCt tr tf-------5 6 6-------pFnSEverlight Electronics Co., Ltd. Device No：DPD-020-040http:\\ Prepared date：07-20-2005Rev 2Page: 3 of 7Prepared by：Jaine Tsai/PD204-6BTypical Electro-Optical Characteristics CurvesFig.1 Power Dissipation vs. Ambient Temperature200 150 100Fig.2 Spectral Sensitivity1.0 Ta=25 C 0.8 0.6 0.4O500.20 -25 0 25 50 75 85 1000600 700 800 900 1000 1100 1200Fig.3 Dark Current vs. Ambient Temperature1000Fig. 4 Reverse Light Current vs. Ee9 71005103VR=10V 1 20 40 60 80 100VR=5V 1 0.5 1.0 1.523.0Everlight Electronics Co., Ltd. Device No：DPD-020-040http:\\ Prepared date：07-20-2005Rev 2Page: 4 of 7Prepared by：Jaine Tsai/PD204-6BTypical Electro-Optical Characteristics CurvesFig.5 Terminal Capacitance vs. Reverse Voltage Fig.6 Response Time vs. Load Resistance10 8 6 4f=1MHZ VR=5V1021VR=10VTa=25°C10 10 10 100t-1-2-320.1110100101102103104105Everlight Electronics Co., Ltd. Device No：DPD-020-040http:\\ Prepared date：07-20-2005Rev 2Page: 5 of 7Prepared by：Jaine Tsai/PD204-6BReliability Test Item And ConditionThe reliability of products shall be satisfied with items listed below. Confidence level：90% LTPD：10% NO. Item Test Conditions Test Hours/ Sample Cycles Sizes 10secs 22pcs 22pcs IL≦L×0.8 L：Lower 22pcs Specification Limit 0/1 Failure Judgement Criteria Ac/Re1 Solder HeatTEMP.：260℃±5℃0/1 0/12 Temperature Cycle H : +100℃ L : -40℃ 3 Thermal Shock H :+100℃ L :-10℃ 4 High Temperature Storage 5 Low Temperature Storage15mins 300Cycles 5mins 15mins 5mins 300Cycles 10secs 5mins 1000hrs 1000hrs 1000hrs 1000hrsTEMP.：+100℃ TEMP.：-40℃22pcs 22pcs 22pcs 22pcs0/1 0/1 0/1 0/16 DC Operating Life VR=5V 7 High Temperature/ 85℃ / 85% R.H High HumidityEverlight Electronics Co., Ltd. Device No：DPD-020-040http:\\ Prepared date：07-20-2005Rev 2Page: 6 of 7Prepared by：Jaine Tsai/PD204-6BPacking Quantity Specification1.1000PCS/1Bag，4Bags/1Box 2.10Boxes/1CartonLabel Form SpecificationCPN: Customer’s Production Number P/N : Production Number QTY: Packing Quantity CAT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number MADE IN TAIWAN: Production PlaceRoHSPD204-6BNotes1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.EVERLIGHT ELECTRONICS CO., LTD. Office: No 25, Lane 76, Sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.C Tel: 886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\Everlight Electronics Co., Ltd. Device No：DPD-020-040http:\\ Prepared date：07-20-2005Rev 2Page: 7 of 7Prepared by：Jaine Tsai/分销商库存信息:EVERLIGHT PD204-6B。