CBLPROG0;中文规格书,Datasheet资料
BSH108,215;中文规格书,Datasheet资料
BSH108N-channel enhancement mode field-effect transistorRev. 02 — 25 October 2000Product specification1.DescriptionN-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.Product availability:BSH108 in SOT23.2.Featuress TrenchMOS™ technology s Very fast switching s Logic level compatiblesSubminiature surface mount package.3.Applicationss Battery management s High speed switchs Low power DC to DC converter.4.Pinning information1.TrenchMOS is a trademark of Royal Philips Electronics.Table 1:Pinning - SOT23, simplified outline and symbolPin Description Simplified outlineSymbol1gate (g)SOT232source (s)3drain (d)MSB003Top view123sdgMBB0765.Quick reference dataTable 2:Quick reference dataSymbol Parameter Conditions Typ Max Unit V DS drain-source voltage (DC)T j=25to150°C−30VI D drain current (DC)T sp=25°C; V GS=5V− 1.9AP tot total power dissipation T sp=25°C−0.83W T j junction temperature−150°C R DSon drain-source on-state resistance V GS=10V; I D=1A77120mΩV GS=5V; I D=1A102140mΩ6.Limiting valuesTable 3:Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC)T j=25to150°C−30VV DGR drain-gate voltage (DC)T j=25to150°C; R GS=20kΩ−30VV GS gate-source voltage (DC)−±20VI D drain current (DC)T sp=25°C; V GS=5V;Figure2and3− 1.9AT sp=100°C; V GS=5V;Figure2− 1.2AI DM peak drain current T sp=25°C; pulsed; t p≤10µs;Figure3−7.5AP tot total power dissipation T sp=25°C;Figure1−0.83W T stg storage temperature−65+150°C T j operating junction temperature−65+150°C Source-drain diodeI S source (diode forward) current (DC)T sp=25°C−0.83AI SM peak source (diode forward) current T sp=25°C; pulsed; t p≤10µs− 3.3AV GS ≥5VFig 1.Normalized total power dissipation as afunction of solder point temperature.Fig 2.Normalized continuous drain current as afunction of solder point temperature.T sp =25°C; I DM is single pulse.Fig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltage.03aa170204060801001200255075100125150175P der T sp(o C)(%)03aa25204060801001200255075100125150175I der T sp (o C)(%)P der P totP tot 25C °()----------------------100%×=I der I DI D 25C °()------------------100%×=03aa8010-310-210-111010-1110102V DS (V)I D (A) D.C.100ms10msR DSon =V DS /I D1mst p =10µs 100µs T sp =25o Ct pt p TPtTδ =7.Thermal characteristics7.1Transient thermal impedanceTable 4:Thermal characteristicsSymbol ParameterConditionsValue Unit R th(j-sp)thermal resistance from junction to solder point mounted on a metal clad substrate;Figure 4150K/W R th(j-a)thermal resistance from junction to ambientmounted on a printed circuit board;minimum footprint350K/WMounted on a metal clad substrate.Fig 4.Transient thermal impedance from junction to solder point as a function of pulse duration.03aa7910-111010210310-510-410-310-210-1110t p (s)Z th(j-sp)(K/W)single pulseδ=0.50.20.10.050.02t pt p TPtTδ =8.CharacteristicsTable 5:CharacteristicsT j=25°C unless otherwise specifiedSymbol Parameter Conditions Min Typ Max Unit Static characteristicsV(BR)DSS drain-source breakdown voltage I D=10µA; V GS=0VT j=25°C3040−VT j=−55°C27−−VV GS(th)gate-source threshold voltage I D=1mA; V DS=V GS;Figure9T j=25°C1 1.52VT j=150°C0.5−−VT j=−55°C−− 3.2VI DSS drain-source leakage current V DS=24V; V GS=0VT j=25°C−0.01 1.0µAT j=150°C−−10µA I GSS gate-source leakage current V GS=±10V; V DS=0V−10100nA R DSon drain-source on-state resistance V GS=10V; I D=1A;Figure7and8T j=25°C−77120mΩV GS=5V; I D=1A;Figure7and8T j=25°C−102140mΩT j=150°C−170240mΩDynamic characteristicsg fs forward transconductance V DS=10V; I D=1A;Figure112 4.5−SQ g(tot)total gate charge V DD=15V; V GS=10V; I D=5A;Figure14− 6.410nC Q gs gate-source charge−0.5−nC Q gd gate-drain (Miller) charge− 1.3−nC C iss input capacitance V GS=0V; V DS=10V; f=1MHz;Figure12−190−pF C oss output capacitance−70−pF C rss reverse transfer capacitance−50−pF t d(on)turn-on delay time V DD=10V; R L=10Ω; V GS=10V; R G=6Ω−3−ns t r rise time−8−ns t d(off)turn-off delay time−15−ns t f fall time−26−ns Source-drain diodeV SD source-drain (diode forward) voltage I S=0.83A; V GS=0V;Figure13−0.8 1.2Vt rr reverse recovery time I S=1A; dI S/dt=−100A/µs; V GS=0V;V DS=25V −25−nsQ r recovered charge−20−nCT j =25°C T j =25°C and 150°C; V DS >I D ×R DSonFig 5.Output characteristics: drain current as afunction of drain-source voltage;typical values.Fig 6.Transfer characteristics: drain current as afunction of gate-source voltage; typical values.T j =25°CFig 7.Drain-source on-state resistance as a functionof drain current; typical values.Fig 8.Normalized drain-source on-state resistancefactor as a function of junction temperature.03aa8100.511.522.533.544.5500.20.40.60.811.2 1.4 1.6 1.82V DS (V)I D(A) 3 V2 V2.2 V 2.4 V 2.6 VV GS = 2.8 V3.4 V T j = 25 o C5 V10 V 03aa8300.511.522.533.544.5500.511.522.533.54V GS (V)I D (A)V DS > I D X R DSonT j = 25 o C150 o C03aa8200.050.10.150.20.250.30.350.40.450.50.511.522.533.544.55I D (A)R DSon(Ω)V GS = 10 V T j = 25 o C 3 V5 V2.2 V2.4 V2.6 V2.8 V3.4 V03aa2700.20.40.60.81.01.21.41.61.82.0-60-202060100140180T j(o C)aa R DSonR DSon 25C °()---------------------------=I D =1mA; V DS =V GS T j =25°C; V DS =5VFig 9.Gate-source threshold voltage as a function ofjunction temperature.Fig 10.Sub-threshold drain current as a function ofgate-source voltage.T j =25°C and 150°C; V DS >I D ×R DSon V GS =0V; f =1MHzFig 11.Forward transconductance as a function ofdrain current; typical values.Fig 12.Input,output and reverse transfer capacitancesas a function of drain-source voltage; typical values.03aa3300.511.522.5-60-202060100140180maxtypminV GS(th)T j (o C)(V)03aa360.511.522.53maxtyp minI DV GS (V)10-610-510-410-310-210-1(A)03aa8401234567800.511.522.533.544.55I D (A)g fs (S)V DS > I D X R DSonT j = 25 o C150 o C03aa861010210310-1110102V DS (V)C iss , C oss , C rss (pF)C issC ossC rssT j =25°C and 150°C; V GS =0V I D =0.5A; V DD =15V; T j =25°CFig 13.Source (diode forward) current as a function ofsource-drain (diode forward) voltage; typical values.Fig 14.Gate-source voltage as a function of gatecharge; typical values.03aa8500.511.522.533.544.5500.20.40.60.811.2 1.4V SD (V)I S (A)150 o CT j = 25 o CV GS = 0V03ab100123456789101112131415012345678910Q G (nC)V GS (V)I D = 0.5 A T j = 25 o CV DD = 15 V9.Package outlineFig 15.SOT23.UNIT A 1max.b p c D E e 1H E L p Q w v REFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE 97-02-2899-09-13IECJEDEC EIAJmm0.10.480.380.150.093.02.81.41.20.95e 1.92.52.10.550.450.10.2DIMENSIONS (mm are the original dimensions)0.450.15SOT23TO-236ABb pD e 1eAA 1L pQdetail XH EE w M v M ABAB 01 2 mmscaleA 1.10.9cX123Plastic surface mounted package; 3 leadsSOT2310.Revision historyTable 6:Revision historyRev Date CPCN Description022*******-Product specification; second version; supersedes Rev.01 of 20000906.Correction to diode I S; see Table 3 “Limiting values”0120000906-Product specification.分销商库存信息: NXPBSH108,215。
DPG60C300HB;中文规格书,Datasheet资料
HiPerFRED²Features / Advantages:Applications:Package:Part numberV I RRM ==30030DPG 60 C 300 HBV A 2x Backside: cathodet rr =35nsHigh Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode● Planar passivated chips● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values● Very soft recovery behaviour● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces:- Power dissipation within the diode- Turn-on loss in the commutating switch● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode● Free wheeling diode● Rectifiers in switch mode power supplies (SMPS)● Uninterruptible power supplies (UPS)FAVI RMS A per pin 50R thCH K/W 0.25M D Nm 1.2mounting torque 0.8T stg °C 150storage temperature-55Weight g 6Symbol DefinitionRatingstyp.max.min.Conditions RMS currentthermal resistance case to heatsink Unit I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside.F CN120mounting force with clip20Ordering Delivering ModeBase Qty Code KeyStandard Part Name DPG 60 C 300 HB 502163Tube 30D P G 60C 300 HBPart numberDiodeHiPerFRED extreme fastCommon CathodeT O-247AD (3) ===DPG60C300QB DPG60C300HJ DPG60C300PC DPF60C300HB TO-3P (3)ISOPLUS247 (3)TO-263AB (D2Pak) TO-247AD (3)Similar PartPackage1)1)Marking on Product DPG60C300HB 300300300300Voltage ClassCurrent Rating [A]Reverse Voltage [V]====RMSDPG80C300HB TO-247AD (3)300分销商库存信息: IXYSDPG60C300HB。
IS43DR16160A-37CBL;IS43DR16160A-37CBLI;中文规格书,Datasheet资料
Integrated Silicon Solution, Inc. — 1Rev. D Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-est version of this device specification before relying on any published information and before placing orders for products.Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:a.) the risk of injury or damage has been minimized;b.) the user assume all such risks; andc.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstancesIS43/46DR83200A IS43/46DR16160AAUGUST 201232Mx8, 16Mx16 DDR2 DRAMFEATURES• V dd = 1.8V ±0.1V , V ddq = 1.8V ±0.1V• JEDEC standard 1.8V I/O (SSTL_18-compatible)• Double data rate interface: two data transfers per clock cycle• Differential data strobe (DQS, DQS ) • 4-bit prefetch architecture• On chip DLL to align DQ and DQS transitions with CK• 4 internal banks for concurrent operation• Programmable CAS latency (CL) 3, 4, 5, and 6 supported• Posted CAS and programmable additive latency (AL) 0, 1, 2, 3, 4, and 5 supported• WRITE latency = READ latency - 1 tCK • Programmable burst lengths: 4 or 8• Adjustable data-output drive strength, full and reduced strength options • On-die termination (ODT)OPTIONS• Configuration(s):32Mx8 (8Mx8x4 banks) IS43/46DR83200A 16Mx16 (4Mx16x4 banks) IS43/46DR16160A • Package:x8: 60-ball TW-BGA (8mm x 10.5mm) x16: 84-ball TW-BGA (8mm x 12.5mm) Timing – Cycle time2.5ns @CL=6 DDR2-800E3.0ns @CL=5 DDR2-667D 3.75ns @CL=4 DDR2-533C 5.0ns @CL=3 DDR2-400B • Temperature Range:Commercial (0°C ≤ Tc ≤ 85°C)Industrial (-40°C ≤ Tc ≤ 95°C; -40°C ≤ T a ≤ 85°C)Automotive, A1 (-40°C ≤ Tc ≤ 95°C; -40°C ≤ T a ≤ 85°C) Automotive, A2 (-40°C ≤ Tc; T a ≤ 105°C)Tc = Case Temp, T a = Ambient T empDESCRIPTIONISSI's 256Mb DDR2 SDRAM uses a double-data-rate architecture to achieve high-speed operation. Thedouble-data rate architecture is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls.Parameter 32M x 8 16M x 16 Configuration 8M x 8 x 4 banks 4M x 16 x 4 banks Refresh Count 8K/64ms 8K/64ms Row Addressing 8K (A0-A12)8K (A0-A12)Column Addressing 1K (A0-A9)512 (A0-A8)Bank Addressing BA0, BA1BA0, BA1Precharge AddressingA10A10ADDRESS TABLESpeed Grade -25E -3D -37C -5B tRCD 15151515tRP 15151515tRC 60606055tRAS 45454540tCK @CL=35555tCK @CL=4 3.75 3.75 3.755tCK @CL=533——tCK @CL=62.5———KEY TIMING PARAMETERSIS43/46DR83200A, IS43/46DR16160AGENERAL DESCRIPTIONRead and write accesses to the DDR2 SDRAM are burst oriented; accesses start at a selected location and continue for a burst length of four or eight in a programmed sequence. Accesses begin with the registration of an Active command, which is then followed by a Read or Write command. The address bits registered coincident with the active command are used to select the bank and row to be accessed (BA0-BA1 select the bank; A0-A12 select the row). The address bits registered coincident with the Read or Write command are used to select the starting column location (A0-A8 for x16) and (A0-A9 for x8) for the burst access and to determine if the auto precharge A10 command is tobe issued. Prior to normal operation, the DDR2 SDRAM must be initialized. The following sections provide detailed information covering device initialization, register definition, command descriptions and device operation.FUNCTIONAL BLOCK DIAGRAMIntegrated Silicon Solution, Inc. — 3Rev. DIS43/46DR83200A, IS43/46DR16160ASymbol Type FunctionCK, CKInputClock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK . Output (read) data is referenced to the crossings of CK and CK (both directions of crossing).CKE InputClock Enable: CKE HIGH activates, and CKE LOW deactivates, internal clock signals and device input buffers and output drivers. Taking CKE LOW provides Precharge Power-Down and Self Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry. CKE is asynchronous for self refresh exit. After VREF has become stable during the power on and initialization sequence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and exit, VREF must be maintained to this input. CKE must be maintained HIGH throughout read and write accesses. Input buffers, excluding CK, CK , ODT and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during self refresh.CS InputChip Select: All commands are masked when CS is registered HIGH. CS provides for external Rank selection on systems with multiple Ranks. CS is considered part of the command code.ODTInput On Die T ermination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When enabled, ODT is applied to each DQ, DQS, DQS , DM signals. The ODT pin will be ignored if the EMR(1) is programmed to disable ODT. RAS , CAS , WEInputCommand Inputs: RAS , CAS and WE (along with CS ) define the command being entered.DM (x8) orUDM, LDM (x16)InputInput Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coincident with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. For x8, the function of DM is enabled by EMRS command to EMR(1) [A11].BA0 - BA1 InputBank Address Inputs: BA0 - BA1 define to which bank an Active, Read, Write or Precharge command is being applied. Bank address also determines if the mode register or one of the extended mode registers is to be accessed during a MRS or EMRS command cycle.A0 - A12 InputAddress Inputs: Provide the row address for Active commands and the column address and Auto Precharge bit for Read/Write commands to select one location out of the memory array in the respective bank. A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0 - BA1. The address inputs also provide the op-code during MRS or EMRS commands.PIN DESCRIPTION TABLEIS43/46DR83200A, IS43/46DR16160ASymbol Type FunctionDQ0-7 x8 DQ0-15 x16Input/OutputData Input/Output: Bi-directional data bus.DQS, (DQS )RDQS, (RDQS ) x8UDQS, (UDQS), LDQS, (LDQS) x16Input/OutputData Strobe: output with read data, input with write data. Edge-aligned with read data, centered in write data. The data strobes DQS(n) may be used in single ended mode or paired with optional complementary signals DQS (n) to provide differential pair signaling to the system during both reads and writes. A control bit at EMR(1)[A10] enables or disables all complementary data strobe signals.x8DQS corresponds to the data on DQ0-DQ7RDQS corresponds to the Read data on DQ0-DQ7, and is enabled by EMRS command to EMR(1) [A11]. x16LDQS corresponds to the data on DQ0-DQ7 UDQS corresponds to the data on DQ8-DQ15NC No Connect: No internal electrical connection is present.VDDQ Supply DQ Power Supply: 1.8 V +/- 0.1 V VSSQ Supply DQ GroundVDDL Supply DLL Power Supply: 1.8 V +/- 0.1 V VSSDL Supply DLL GroundVDD Supply Power Supply: 1.8 V +/- 0.1 V VSS Supply GroundVREFSupplyReference voltageIS43/46DR83200A, IS43/46DR16160APIN CONFIGURATIONPACKAGE CODE: B 60 BALL TW-BGA (Top View) (8.00 mm x 10.5 mm Body, 0.8 mm Ball Pitch)Pin name Function Pin name FunctionA0 to A12Address inputs ODT ODT controlBA0, BA1Bank select VDD Supply voltage for internal circuitDQ0 to DQ7Data input/output VSS Ground for internal circuitDQS, /DQS Differential data strobe VDDQ Supply voltage for DQ circuit/CS Chip select VSSQ Ground for DQ circuit/RAS, /CAS, /WE Command input VREF Input reference voltageCKE Clock enable VDDL Supply voltage for DLL circuitCK, /CK Differential clock input VSSDL Ground for DLL circuitDM Write data mask NC No connectionRDQS, /RDQS Differential Redundant Data StrobeIntegrated Silicon Solution, Inc. — 5 Rev. DIS43/46DR83200A, IS43/46DR16160APIN CONFIGURATIONPACKAGE CODE: B 84 BALL TW-BGA (Top View) (8.00 mm x 12.50 mm Body, 0.8 mm Ball Pitch)Pin name Function Pin name FunctionA0 to A12Address inputs ODT ODT controlBA0, BA1Bank select VDD Supply voltage for internal circuitDQ0 to DQ15Data input/output VSS Ground for internal circuitLDQS, UDQS Differential data strobe VDDQ Supply voltage for DQ circuit/LDQS, /UDQS/CS Chip select VSSQ Ground for DQ circuit/RAS, /CAS, /WE Command input VREF Input reference voltageCKE Clock enable VDDL Supply voltage for DLL circuitCK, /CK Differential clock input VSSDL Ground for DLL circuitLDM to UDM Write data mask NC No connectionIS43/46DR83200A, IS43/46DR16160AELECTRICAL SPECIFICATIONSAbsolute Maximum DC RatingsSymbol Parameter Rating Units NotesV dd Voltage on VDD pin relative to Vss - 1.0 V ~ 2.3 V V 1,3V ddq Voltage on VDDQ pin relative to Vss - 0.5 V ~ 2.3 V V 1,3V ddl Voltage on VDDL pin relative to Vss - 0.5 V ~ 2.3 V V 1,3V in, V out Voltage on any pin relative to Vss - 0.5 V ~ 2.3 V V 1,4T stg Storage Temperature -55 to +150°C 1, 2Notes:1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating onlyand functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer toJESD51-2 standard.3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ andVDDL are less than 500 mV, Vref may be equal to or less than 300 mV.4. Voltage on any input or I/O may not exceed voltage on VDDQ.AC & DC Recommended Operating ConditionsRecommended DC Operating Conditions (SSTL-1.8)Symbol Parameter Rating Units NotesMin.Typ.Max.VDD Supply Voltage 1.7 1.8 1.9V1VDDL Supply Voltage for DLL 1.7 1.8 1.9 V 5VDDQ Supply Voltage for Output 1.7 1.8 1.9 V 1, 5VREF Input Reference Voltage 0.49 x VDDQ 0.50 x VDDQ 0.51 x VDDQ V 2. 3VTT Termination Voltage VREF - 0.04VREF VREF + 0.04V 4Notes:1. There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However under all conditions VDDQ must be less thanor equal to VDD.2. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to beabout 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.3. Peak to peak ac noise on VREF may not exceed +/-2 % VREF(dc).4. VTT of transmitting device must track VREF of receiving device.5. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDL tied togetherIntegrated Silicon Solution, Inc. — 7 Rev. DIS43/46DR83200A, IS43/46DR16160ASymbol ParameterRating (1,2,3)UnitsTOPERCommercial Temperature T c = 0 to +85o C Industrial Temperature,T c = -40 to +95o C Automotive Temperature (A1)T a = -40 to +85o C Automotive Temperature (A2)T c = -40 to +105o C T a = -40 to +105oCOperating Temperature ConditionODT DC Electrical CharacteristicsPARAMETER/CONDITIONSYMBOL MIN NOM MAX UNITS NOTES R tt effective impedance value for EMR(1)[A6,A2]=0,1; 75 ΩR tt 1(eff) 6075 90 Ω 1R tt effective impedance value for EMR(1)[A6,A2]=1,0; 150 ΩR tt 2(eff)120150 180 Ω 1R tt effective impedance value for EMR(1)[A6,A2]=1,1; 50 ΩR tt 3(eff)405060 Ω 1Deviation of VM with respect to VDDQ/2ΔVM- 6+ 6%1Notes:1. Test condition for R tt measurementsMeasurement Definition for R tt (eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac)) and I( VIL (ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18R tt (eff) V ih (ac) - V il (ac)I(V ih (ac)) - I(V il (ac))Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.ΔVM = [(2 x VM / VDDQ) - 1] x 100%Notes:1. T c = Operating case temperature at center of package2. T a = Operating ambient temperature immediately above package center.3. Both temperature specifications must be met.Thermal ResistancePackage Substrate Theta-ja (Airflow = 0m/s)Theta-ja (Airflow = 1m/s)Theta-ja (Airflow = 2m/s)Theta-jc Units 60-ball BGA 4-layer 39.7134.2132.17 3.27C/W 84-ball BGA4-layer34.6630.0728.666.68C/WIntegrated Silicon Solution, Inc. — 9Rev. DIS43/46DR83200A, IS43/46DR16160AInput DC logic levelSymbol Parameter Min.Max.Units NotesVIH(dc)dc input logic HIGH VREF + 0.125VDDQ + 0.3V VIL(dc)dc input logic LOW- 0.3VREF - 0.125VInput AC logic levelSymbol Parameter DDR2-400, DDR2-533DDR2-667, DDR2-800Units NotesMin.Max.Min.Max VIH (ac)ac input logic HIGH VREF + 0.250VDDQ + Vpeak VREF + 0.200VDDQ + Vpeak V 1VIL (ac)ac input logic LOWVSSQ - VpeakVREF - 0.250VSSQ - VpeakVREF - 0.200V1AC Input Test ConditionsSymbol ConditionValue Units Notes VREFInput reference voltage0.5 x VDDQV 1VSWING(MAX)Input signal maximum peak to peak swing 1.0V 1SLEWInput signal minimum slew rate1.0V/ns2, 3Notes:1. Refer to Overshoot/undershoot specifications for Vpeak value: maximum peak amplitude allowed for overshoot and undershoot.Notes:1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising edges and the range from VREF to VIL(ac) max for falling edges as shown in the below figure.3. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to VIL(ac) on the negative transitions.AC input test signal waveformIS43/46DR83200A, IS43/46DR16160ADifferential input AC Logic LevelSymbol Parameter Min.Max.Units NotesVID (ac)ac differential input voltage0.5VDDQ V1,3VIX (ac)ac differential crosspoint voltage0.5 x VDDQ - 0.1750.5 x VDDQ + 0.175V2Notes:1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS andVCP is the complementary input signal (such as CK or DQS). The minimum value is equal to VIH(AC) - VIL(AC).2. The typical value of VIX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VIX(AC) is expected to track variations inVDDQ. VIX(AC) indicates the voltage at which differential input signals must cross.3. Refer to Overshoot/undershoot specifications for Vpeak value: maximum peak amplitude allowed for overshoot and undershoot. Differential signal levelsDifferential AC Output ParametersSymbol Parameter Min.Max.Units NotesVOX (ac)ac differential crosspoint voltage0.5 x VDDQ - 0.1250.5 x VDDQ + 0.125V1Note:1. The typical value of VOX(AC) is expected to be about 0.5 x VDDQ of the transmitting device and VOX(AC) is expected to track variations inVDDQ. VOX(AC) indicates the voltage at which differential output signals must cross.分销商库存信息:ISSIIS43DR16160A-37CBL IS43DR16160A-37CBLI。
CRB-48-70030;CRB-48-70060;CRB-48-70180;CRD-48-30180;中文规格书,Datasheet资料
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Wiring Diagram – Bottom View (pins numbered clockwise form keyway)
18 + INPUT _ (DC POLARITY INDICATED)
Fig.1 8 Pin
** Note: Input polarity for DC operation. For most reliable operation on AC, connect high side to “+” and low side to “–”.
sockets. Weight: 6 oz. (170g) approximately.
Ordering Information – Boldface items listed below are normally maintained in stock for immediate delivery.
File E22575 File LR15734
Initial Dielectric Strength
Between Open Contacts: 500V rms, 60 Hz. Between All Other Conductors: 500V rms, 60 Hz.
Input Data @ 25°C
Contact Data @ 25°C
Arrangements: 2 Form C (DPDT). Material: Silver-cadmium oxide alloy. Rating: 10 A @ 30VDC or 277VAC, resistive; 1/2 HP @ 250VAC;
CRG03(TE85L,Q,M);中文规格书,Datasheet资料
Electrical Characteristics (Ta = 25°C)
Characteristics Peak forward voltage Repetitive peak reverse current
Thermal resistance
Symbol VFM(1) VFM(2) VFM(3) IRRM
JEDEC
―
JEITA
―
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
ZGP323LAS2008G中文资料(zilog)中文数据手.
Z8 GP TM微控制器ZGP323L OTP MCU系列初稿产品规格PS023702-1004文档免责声明©2004 ZiLOG公司防护留所有权利.本出版物中关于信息设备,应用程序,或所描述技术目是提出可能用途,并且可以被替代. ZiLOG公司,INC.不承担责任或者提供准确而可靠信息表示,设备,或技术描述这份文件. ZiLOG公司也不承担责任相关以任何方式知识产权侵权信息使用,设备,或技术此处描述或以其他方式.由ZiLOG公司销售设备都属于防护修范围和出现在ZiLOG公司销售条款和条件赔偿责任规定限制. ZiLOG公司让适销性或用于任何目任何防护证.除非ZiLOG公司,利用信息,设备或技术作为生命支持系统中关键部件明确书面许可,没有被授权.转让任何许可证,暗示或以其他方式,通过在本文档中任何知识产权.iii目录发展特色. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1概述. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2引脚说明. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4绝对最大额定值 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10标准测试条件. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10直流特性. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11AC 特征. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14引脚功能. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .XTAL1晶体1(基于时间输入. . . . . . . . . . . . . . . . . . . . . . . . . . . . .XTAL2晶体2(基于时间输出. . . . . . . . . . . . . . . . . . . . . . . . . . . .端口0(P07-P00. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .端口1(P17-P10. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .端口2(P27-P20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .端口3(P37-P30. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .RESET (输入,低电平有效. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .功能描述. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .程序存储器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .随机存取存储器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .扩展寄存器文件. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .寄存器文件. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .堆栈. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .计时器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .计数器/定时器功能模块. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16161616171819232323232428293038扩展寄存器文件控制寄存器(0D . . . . . . . . . . . . . . . . . . . . . . . . 64扩展寄存器文件控制寄存器(0F . . . . . . . . . . . . . . . . . . . . . . . . . 69标准控制寄存器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73包装信息. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80订购信息 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89Precharacterization 产品. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95iv 图一览图1.图2.图3.图4.图5.图6.图7.图8.图9.图10.图11.图12.图13.图14.图15.图16.图17.图18.图19.图20.图21.图22.图23.图24.图25.图26.图27.图28.图29.图30.图31.图32.图33.图34.功能框图. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3计数器/定时器图. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420引脚PDIP / SOIC / SSOP / CDIP *引脚配置. . . . . . . . . . . . . .五28引脚PDIP / SOIC / SSOP / CDIP *引脚配置. . . . . . . . . . . . . . 6 40引脚PDIP / CDIP *引脚配置. . . . . . . . . . . . . . . . . . . . . . . . 748引脚SSOP引脚配置. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8测试负载图. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10AC时序图. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14P0口配置. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17端口1配置. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18端口2配置. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19端口3配置. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20端口3计数器/定时器输出配置. . . . . . . . . . . . . . . . . . . 22程序存储器映射(32K OTP. . . . . . . . . . . . . . . . . . . . . . . . . . 24扩展寄存器文件架构. . . . . . . . . . . . . . . . . . . . . . . . 26寄存器指针. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27寄存器指针细节. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29毛刺滤波电路. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38传输模式流程图. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 398位计数器/定时器电路. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40T8_OUT在单通模式. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41T8_OUT在模N模式. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41解调方式计数捕获流程. . . . . . . . . . . . . . . . 42解调模式流程图. . . . . . . . . . . . . . . . . . . . . . . . . . . . 4316位计数器/定时器电路. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44T16_OUT在单通模式. . . . . . . . . . . . . . . . . . . . . . . . . . . . 45T16_OUT在模N模式. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45乒乓模式图. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47输出电路. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47中断框图. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49振荡器配置. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51端口配置寄存器(PCON(只写. . . . . . . . . . . . . . 53STOP模式恢复寄存器. . . . . . . . . . . . . . . . . . . . . . . . . . . 55SCLK线路. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56v图35.图36.图37.图38.图39.图40.图41.图42.图43.图44.图45.图46.图47.图48.图49.图50.图51.图52.图53.图54.图55.图56.图57.图58.图59.图60.图61.图62.图63.图64.图65.图66.图67.图68.停止模式恢复源. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .停止模式恢复寄存器2((0FDH:D2-D4,D6只写.看门狗定时器模式寄存器(只写. . . . . . . . . . . . . . . .复位和看门狗. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TC8控制寄存器((0DO0H:读/写除非另有说明T8和T16共同控制功能((0D01H:读/写. . .T16控制寄存器((0D2H:读/写除非另有说明.T8 / T16控制寄存器(0D03H:读/写(除非另有说明. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .电压检测寄存器. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .端口配置寄存器(PCON(0F00H:只写. . . . . . .停止模式恢复寄存器((0F0BH:D6-D0 =只写,D7 =只读. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .停止模式恢复寄存器2((0F0DH:D2-D4,D6只写看门狗定时器寄存器((0F0FH:只写. . . . . . . . . . . . .端口2模式寄存器(F6H:只写. . . . . . . . . . . . . . . . . . . . .端口3模式寄存器(F7H:只写. . . . . . . . . . . . . . . . . . . . .端口0和1模式寄存器(F8H:只写. . . . . . . . . . . . . . . .中断优先级寄存器(F9H:只写. . . . . . . . . . . . . . . . . .中断请求寄存器(FAH:读/写. . . . . . . . . . . . . . . .中断屏蔽寄存器(FBH:读/写. . . . . . . . . . . . . . . . . . .标志寄存器(FCH:读/写. . . . . . . . . . . . . . . . . . . . . . . . . . .寄存器指针(FDH:读/写. . . . . . . . . . . . . . . . . . . . . . . .堆栈指针高(FEH:读/写. . . . . . . . . . . . . . . . . . . . . .堆栈指针低(FFH:读/写. . . . . . . . . . . . . . . . . . . . . . .20引脚封装CDIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20引脚PDIP封装框图. . . . . . . . . . . . . . . . . . . . . . . . . . . . 20引脚SOIC封装图. . . . . . . . . . . . . . . . . . . . . . . . . . . .20引脚SSOP封装框图. . . . . . . . . . . . . . . . . . . . . . . . . . .28引脚封装CDIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28引脚SOIC封装图. . . . . . . . . . . . . . . . . . . . . . . . . . . .28引脚PDIP封装框图. . . . . . . . . . . . . . . . . . . . . . . . . . . . 28引脚SSOP封装框图. . . . . . . . . . . . . . . . . . . . . . . . . . .40引脚封装CDIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40引脚PDIP封装框图. . . . . . . . . . . . . . . . . . . . . . . . . . . . 48引脚SSOP封装设计. . . . . . . . . . . . . . . . . . . . . . . . . . . .575960616465676869707172737374757677 77787879798081818283848586878788。
ZL30310GKG中文资料(microsemi)中文数据手册「EasyDatasheet - 矽搜」
一个完整设计手册是提供给符合条件客户. 要进行注册,请发送电子邮件至
特征 • 恢复和传输网络同步
通过以太网,IP和MPLS网络 • 同时支持同步
以太网和IEEE1588行业标准时序
协议
• 功能服务器,客户端和中继器操作 • 集成两个独立数字锁相环,
与包和电之间无缝切换 时钟基准
-40°C至+ 85°C
• 生成两个独立同步以太网 钟表推动行业标准以太网PHY 在任25 MHz或125 MHz设备
• 完全可配置解决方案,使性能 进行调整以适应应用/网络要求
• 两个可独立配置MAC接口, 支持MII,RMII,GMII和TBI标准
• 线速以太网桥通过功能 在MAC接口之间
• 同步串行控制接口
卓联结合两种方法到单个设备.该ZL30310集成一个极低抖动 频率合成器,能够产生所需所有同步以太网操作频率, 加上卓联公司正在申请专利时序分组（TOP）技术基础上,行业标准 IEEE1588 TM "PTP"（精密时间协议）.它不仅可以作为一个全功能数字锁相环,还 支持时间,相位和频率在这两个第2层和第3层网络分布,同时使用 同步以太网和IEEE 1588协议,可以单独或组合使用.
客户端和中继器行为相结合, 例如,IEEE1588中继器
当作为服务器操作系统,卓设备锁定到输入参考时钟作为一个传统PLL, 过滤任何抖动可能存在.它也同步于任何低频对准信号,例如,一个8千赫 TDM帧脉冲或1赫兹对齐输入.该装置可提供数据包流,每个都包含一个时间戳指示精确时间,该分组被发射 到网络中,相对于已获取基准.它还接收报文从客户端,并返回一个消息,指示在服务器接收客户端消息准确时间 .利用这些信息,客户能够调整自己时基与服务器.
RURG1520CC;中文规格书,Datasheet资料
RURG1520CC 15A, 200V Ultrafast Dual DiodeRURG1520CC15A, 200V Ultrafast Dual DiodeFeatures•Ultrafast with Soft Recovery...........................<30ns •Operating Temperature..................................175°C •Reverse Voltage..............................................200V •Avalanche Energy Rated •Planar ConstructionApplications•Switching Power Supplies •Power Switching Circuits •General PurposeOrdering InformationsNote: When ordering, use the entire part number.DescriptionThe RURG1520CC is an ultrafast dual diode with soft recovery characteristics (trr<30ns). It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar con-struction.This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits,reducting power loss in the switching transistors.Formerly developmental type TA09926.Absolute Maximum Ratings (Per Leg) T C= 25°CPart NumberPackageBrandRURG1520CCTO-247RURG1520CANODE 1CATHODEANODE 2CATHODE (BOTTOM SIDEMETAL)JEDEC STYLE TO-247KA 1A 2SymbolParameterRURG1520CUnitsV RRM Peak Repetitive Reverse Voltage 200V V RWM Working Peak Reverse Voltage 200V V R DC Blocking Voltage200V I F(AV)Average Rectified Forward Current (T C = 157°C)15A I FRM Repetitive Peak Surge Current (Square Wave, 20kHz)30A I FSM Nonrepetitive Peak Surge Current (Halfwave, 1 phase, 60Hz)200A P D Maximum Power Dissipation100W E AVL Avalanche Energy (See Figures 8 and 9)20mJ T STG , T JOperating and Storage Temperature-65 to 175°CRURG1520CC 15A, 200V Ultrafast Dual DiodeElectrical Characteristics (Per Leg) T C= 25°C, unless otherwise specifiedDEFINITIONSV F = Instantaneous forwrd voltage (pw = 300µs, D = 2%)I R = Instantaneous reverse current.t rr = Reverse recovery time (See Figure 6), summation of t a + t b .t a = Time to reach peak reverse current (See Figure 6).t b = Time from peak I RM to projected zero crossing of I RM based on a straight line from peak I RM through 25% of I RM (See Figure 6).R θJC = Thermal resistance junction to case.pw = pulse width.D = duty cycleSymbolParameterTest ConditionsMin.Typ.Max.UnitsV F Forward Voltage I F = 15A1.05V I F = 15A, T C = 150°C 0.85V I R Reverse Leakage V R = 200V100µA V R = 200V, T C = 150°C 500µA t rr Reverse Recovery TimeI F = 1A, dlF/dt = 100A/µs 30ns I F = 15A, dlF/dt = 100A/µs 35ns t a I F = 15A, dlF/dt = 100A/µs 20ns t b I F = 15A, dlF/dt = 100A/µs10nsR θJC1.5°C/WRURG1520CC 15A, 200V Ultrafast Dual DiodeTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.RURG1520CC 15A, 200V Ultrafast Dual DiodeDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FAST ®FASTr™FPS™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™A CEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Rev. I15分销商库存信息: FAIRCHILD RURG1520CC。
VCNL4010-GS08;中文规格书,Datasheet资料
Fully Integrated Proximity and Ambient Light Sensor with Infrared Emitter, I 2C Interface, and Interrupt FunctionDESCRIPTIONThe VCNL4010 is a fully integrated proximity and ambient light sensor. Fully integrated means that the infrared emitter is included in the package. It has 16 bit resolution. It includes a signal processing IC and features standard I 2C communication interface. It features an interrupt function.APPLICATIONS•Proximity sensor for mobile devices (e.g. smart phones,touch phones, PDA, GPS) for touch screen locking, power saving, etc.•Integrated ambient light function for display/keypad contrast control and dimming of mobile devices•Proximity/optical switch for consumer, computing and industrial devices and displays•Dimming control for consumer, computing and industrial displaysFEATURES•Package type: surface mount•Dimensions (L x W x H in mm): 3.95 x 3.95 x 0.75•Integrated infrared emitter, ambient light sensor,proximity sensor, and signal conditioning IC •Interrupt function•Supply voltage range V DD : 2.5 V to 3.6 V •Supply voltage range IR anode: 2.5 V to 5 V •Communication via I 2C interface •I 2C Bus H-level range: 1.7 V to 5 V •Floor life: 168 h, MSL 3, acc. J-STD-020•Low stand by current consumption: 1.5 μA•ompliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/ECNote**Please see document “Vishay Material Category Policy”:/doc?99902PROXIMITY FUNCTION•Built-in infrared emitter and photo-pin-diode for proximity function•16 bit effective resolution for proximity detection range ensures excellent cross talk immunity•Programmable LED drive current from 10 mA to 200 mA in 10 mA steps•Excellent ambient light suppression by modulating the infrared signal•Proximity distance up to 200 mmAMBIENT LIGHT FUNCTION•Built-in ambient light photo-pin-diode with close-to-human-eye sensitivity•16 bit dynamic range from 0.25 lx to 16 klx •100 Hz and 120 Hz flicker noise rejectionNote(1)Adjustable through I 2C interfacePRODUCT SUMMARYPART NUMBER OPERATING RANGE (mm)OPERATING VOLTAGE RANGE (V)I 2C BUS VOLTAGE RANGE (V)LED PULSE CURRENT (1)(mA)AMBIENT LIGHT RANGE (lx)AMBIENT LIGHT RESOLUTION(lx)OUTPUT CODE VCNL40101 to 2002.5 to3.61.7 to 510 to 2000.25 to 16 3830.2516 bit, I 2CNotes(1)MOQ: minimum order quantity(2)VCNL4000 Demokit provides USB dongle, basic software including Vishay licence. The VCNL4010 sensor board could be ordered free of charge by contacting sensorstechsupport@ . Software updates for VC NL4010 can be downloaded from our web site:/???/ORDERING INFORMATIONORDERING CODE PACKAGING VOLUME (1)REMARKSVCNL4010-GS08Tape and reelMOQ: 1800 pcs 3.95 mm x 3.95 mm x 0.75 mmVCNL4010-GS18MOQ: 7000 pcsVCNL4000Demokit (2)-MOQ: 1 pc-ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONSYMBOL MIN.MAX.UNIT Supply voltageV DD - 0.3 5.5V Operation temperature range T amb - 25+ 85°C Storage temperature range T stg - 40+ 85°C Total power dissipation T amb ≤ 25 °C P tot 50mW Junction temperatureT j100°CBASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)PARAMETER TEST CONDITIONSYMBOLMIN.TYP.MAX.UNIT Supply voltage V DD 2.5 3.6V Supply voltage IR anode 2.55V I 2C Bus H-level range 1.75V INT H-level range 1.75V INT low voltage 3 mA sink current 0.4V Current consumptionStandby current,no IRED-operation 1.52μA Current consumptionproximity mode incl. IRED (averaged)2 measurements per second,IRED current 20 mA5μA 250 measurements per second,IRED current 20 mA 520μA 2 measurements per second,IRED current 200 mA 35μA 250 measurements per second,IRED current 200 mA 4.0mA Current consumption ambient light mode2 measurements per secondaveraging = 12.5μA 8 measurements per secondaveraging = 110μA 2 measurements per secondaveraging = 64160μA 8 measurements per secondaveraging = 64640μA Ambient light resolution Digital resolution (LSB count )0.25lx Ambient light output E V = 100 lx averaging = 64400counts I 2C clock rate rangef SCL3400kHzCIRCUIT BLOCK DIAGRAMNote•nc must not be electrically connectedPads 8 to 11 are only considered as solder padsTEST CIRCUIT BASIC CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)Fig. 1 - Idle Current vs. Ambient Temperature Fig. 2 - Idle Current vs. V DDFig. 3 - Proximity Value vs. Distance Fig. 4 - Forward Current vs. TemperatureFig. 5 - Relative Radiant Intensity vs. WavelengthFig. 6 - Relative Radiant Intensity vs. Angular Displacement Fig. 7 - Relative Spectral Sensitivity vs. Wavelength(Proximity Sensor) Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement(Proximity Sensor)Fig. 9 - Ambient Light Value vs. Illuminance Fig. 10 - Relative Spectral Sensitivity vs. Wavelength(Ambient Light Sensor)Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement(Ambient Light Sensor)APPLICATION INFORMATIONVCNL4010 is a cost effective solution of proximity and ambient light sensor with I2C bus interface. The standard serial digital interface is easy to access “Proximity Signal” and “Light Intensity” without complex calculation and programming by external controller. Beside the digital output also a flexible programmable interrupt pin is available.1. Application CircuitFig. 12 - Application Circuit(x) = Pin NumberNote•The interrupt pin is an open drain output. The needed pull-up resistor may be connected to the same supply voltage as the application controller and the pull-up resistors at SDA/SCL. Proposed value R2 should be >1 kΩ , e.g. 10 kΩ to 100 kΩ.Proposed value for R3 and R4, e.g. 2.2 kΩ to 4.7 kΩ, depend also on the I2C bus speed.For detailed description about set-up and use of the interrupt as well as more application related information see AN: “Designing VCNL4010 into an Application”.2. I 2C InterfaceThe VCNL4010 contains seventeen 8 bit registers for operation control, parameter setup and result buffering. All registers are accessible via I 2C communication. Figure 13 shows the basic I 2C communication with VCNL4010.The built in I 2C interface is compatible with all I 2C modes (standard, fast and high speed).I 2C H-level range = 1.7 V to 5 V.Please refer to the I 2C specification from NXP for details.Device AddressThe VC NL4010 has a fix slave address for the host programming and accessing selection. The predefined 7 bit I 2C bus address is set to 0010 011 = 13h. The least significant bit (LSB) defines read or write mode. Accordingly the bus address is set to 0010 011x = 26h for write, 27h for read.Register AddressesVC NL4010 has seventeen user accessible 8 bit registers.The register addresses are 80h (register #0) to 90h (register #16).REGISTER FUNCTIONSRegister #0 Command RegisterRegister address = 80hThe register #0 is for starting ambient light or proximity measurements. This register contains 2 flag bits for data ready indication.Note•With setting bit 3 and bit 4 at the same write command, a simultaneously measurement of ambient light and proximity is done. Beside als_en and/or prox_en first selftimed_en needs to be set. On-demand measurement modes are disabled if selftimed_en bit is set. For the selftimed_en mode changes in reading rates (reg #4 and reg #2) can be made only when b0 (selftimed_en bit) = 0. For the als_od mode changes to the reg #4 can be made only when b4 (als_od bit) = 0; this is to avoid synchronization problems and undefined states between the clock domains. In effect this means that it is only reasonable to change rates while no selftimed conversion is ongoing.TABLE 1 - COMMAND REGISTER #0Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0config_lockals_data_rdyprox_data_rdyals_odprox_odals_enprox_enselftimed_enDescriptionconfig_lock Read only bit. Value = 1als_data_rdy Read only bit. Value = 1 when ambient light measurement data is available in the result registers. This bitwill be reset when one of the corresponding result registers (reg #5, reg #6) is read.prox_data_rdyRead only bit. Value = 1 when proximity measurement data is available in the result registers. This bit will be reset when one of the corresponding result registers (reg #7, reg #8) is read.als_od R/W bit. Starts a single on-demand measurement for ambient light. If averaging is enabled, starts a sequence of readings and stores the averaged result. Result is available at the end of conversion for reading in the registers #5(HB) and #6(LB).prox_od R/W bit. Starts a single on-demand measurement for proximity.Result is available at the end of conversion for reading in the registers #7(HB) and #8(LB).als_en R/W bit. Enables periodic als measurement prox_en R/W bit. Enables periodic proximity measurementselftimed_enR/W bit. Enables state machine and LP oscillator for self timed measurements; no measurement is performed until the corresponding bit is setRegister #1 Product ID Revision RegisterRegister address = 81h. This register contains information about product ID and product revision.Register data value of current revision = 21h.Register #2 Rate of Proximity Measurement Register address = 82h.Note•If self_timed measurement is running, any new value written in this register will not be taken over until the mode is actualy cycled.Register #3 LED Current Setting for Proximity ModeRegister address = 83h. This register is to set the LED current value for proximity measurement.The value is adjustable in steps of 10 mA from 0 mA to 200 mA.This register also contains information about the used device fuse program ID.TABLE 2 - PRODUCT ID REVISION REGISTER #1Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0Product IDRevision IDDescriptionProduct ID Read only bits. Value = 2Revision IDRead only bits. Value = 1TABLE 3 - PROXIMITY RATE REGISTER #2Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0n/aRate of Proximity Measurement (no. ofmeasurements per second)DescriptionProximity rateR/W bits.000 - 1.95 measurements/s (DEFAULT)001 - 3.90625 measurements/s 010 - 7.8125 measurements/s 011 - 16.625 measurements/s 100 - 31.25 measurements/s 101 - 62.5 measurements/s 110 - 125 measurements/s 111 - 250 measurements/sTABLE 4 - IR LED CURRENT REGISTER #3Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0Fuse prog IDIR LED current valueDescriptionFuse prog ID Read only bits.Information about fuse program revision used for initial setup/calibration of the device.IR LED current valueR/W bits. IR LED current = Value (dec.) x 10 mA.Valid Range = 0 to 20d. e.g. 0 = 0 mA , 1 = 10 mA, …., 20 = 200 mA (2 = 20 mA = DEFAULT) LED Current is limited to 200 mA for values higher as 20d.Register #4 Ambient Light Parameter Register Register address = 84h.Note•If self_timed measurement is running, any new value written in this register will not be taken over until the mode is actualy cycled.Register #5 and #6 Ambient Light Result RegisterRegister address = 85h and 86h. These registers are the result registers for ambient light measurement readings.The result is a 16 bit value. The high byte is stored in register #5 and the low byte in register #6.TABLE 5 - AMBIENT LIGHT PARAMETER REGISTER #4Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0Cont. conv.modeals_rateAuto offset compensationAveraging function(number of measurements per run)DescriptionCont. conversion modeR/W bit. Continuous conversion mode.Enable = 1; Disable = 0 = DEFAULTThis function can be used for performing faster ambient light measurements. Please refer to the application information chapter 3.3 for details about this function. Ambient light measurement rateR/W bits. Ambient light measurement rate 000 - 1 samples/s001 - 2 samples/s = DEFAULT 010 - 3 samples/s 011 - 4 samples/s 100 - 5 samples/s 101 - 6 samples/s 110 - 8 samples/s 111 - 10 samples/sAuto offset compensationR/W bit. Automatic offset compensation.Enable = 1 = DEFAULT; Disable = 0In order to compensate a technology, package or temperature related drift of the ambient light values there is a built in automatic offset compensation function.With active auto offset compensation the offset value is measured before each ambient light measurement and subtracted automatically from actual reading.Averaging functionR/W bits. Averaging function.Bit values sets the number of single conversions done during one measurement cycle. Result is the average value of all conversions.Number of conversions = 2decimal_value e.g. 0 = 1 conv., 1 = 2 conv, 2 = 4 conv., ….7 = 128 conv.DEFAULT = 32 conv. (bit 2 to bit 0: 101)TABLE 6 - AMBIENT LIGHT RESULT REGISTER #5Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0DescriptionRead only bits. High byte (15:8) of ambient light measurement resultTABLE 7 - AMBIENT LIGHT RESULT REGISTER #6Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0DescriptionRead only bits. Low byte (7:0) of ambient light measurement resultRegister #7 and #8 Proximity Measurement Result RegisterRegister address = 87h and 88h. These registers are the result registers for proximity measurement readings.The result is a 16 bit value. The high byte is stored in register #7 and the low byte in register #8.Register #9 Interrupt Control Register Register address = 89h.TABLE 8 - PROXIMITY RESULT REGISTER #7Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0DescriptionRead only bits. High byte (15:8) of proximity measurement resultTABLE 9 - PROXIMITY RESULT REGISTER #8Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0DescriptionRead only bits. Low byte (7:0) of proximity measurement resultTABLE 10 - INTERRUPT CONTROL REGISTER #9Bit 7Bit 6Bit 5Bit 4Bit 3Bit 2Bit 1Bit 0Int count exceedn/aINT_PROX_ready_ENINT_ALS_ready_ENINT_THRES_ENINT_THRES_SELDescriptionInt count exceedR/W bits. These bits contain the number of consecutive measurements needed above/below the threshold000 - 1 count = DEFAULT 001 - 2 count 010 - 4 count 011 - 8 count 100 -16 count 101 - 32 count 110 - 64 count 111 - 128 countINT_PROX_ready_EN R/W bit. Enables interrupt generation at proximity data ready INT_ALS_ ready_EN R/W bit. Enables interrupt generation at ambient data readyINT_THRES_EN R/W bit. Enables interrupt generation when high or low threshold is exceeded INT_THRES_SELR/W bit. If 0: thresholds are applied to proximity measurements If 1: thresholds are applied to als measurementsRegister #10 and #11 Low ThresholdRegister address = 8Ah and 8Bh. These registers contain the low threshold value. The value is a 16 bit word. The high byte is stored in register #10 and the low byte in register #11.TABLE 11 - LOW THRESHOLD REGISTER #10Bit7Bit6Bit5Bit4Bit3Bit2Bit1Bit0DescriptionR/W bits. High byte (15:8) of low threshold valueTABLE 12 - LOW THRESHOLD REGISTER #11Bit7Bit6Bit5Bit4Bit3Bit2Bit1Bit0DescriptionR/W bits. Low byte (7:0) of low threshold valueRegister #12 and #13 High ThresholdRegister address = 8Ch and 8Dh. These registers contain the high threshold value. The value is a 16 bit word. The high byte is stored in register #12 and the low byte in register #13.TABLE 13 - HIGH THRESHOLD REGISTER #12Bit7Bit6Bit5Bit4Bit3Bit2Bit1Bit0DescriptionR/W bits. High byte (15:8) of high threshold valueTABLE 14 - HIGH THRESHOLD REGISTER #13Bit7Bit6Bit5Bit4Bit3Bit2Bit1Bit0DescriptionR/W bits. Low byte (7:0) of high threshold valueRegister #14 Interrupt Status RegisterRegister address = 8Eh. This register contains information about the interrupt status for either proximity or ALS function and indicates if high or low going threshold exceeded.TABLE 15 - INTERRUPT STATUS REGISTER #14Bit7Bit6Bit5Bit4Bit3Bit2Bit1Bit0n/a int_prox_ready int_als_ready int_th_low int_th_hiDescriptionint_prox_ready R/W bit. Indicates a generated interrupt for proximityint_als_ready R/W bit. Indicates a generated interrupt for alsint_th_low R/W bit. Indicates a low threshold exceedint_th_hi R/W bit. Indicates a high threshold exceedNote•Once an interrupt is generated the corresponding status bit goes to 1 and stays there unless it is cleared by writing a 1 in the corresponding bit. The int pad will be pulled down while at least one of the status bit is 1.分销商库存信息: VISHAYVCNL4010-GS08。
cb中文说明书
该配料控制器是世界上最小的配料控制器.使用21世纪最新之Delta-Sigma芯片以达至高精度及快速转换效果. 使用RS485标准接口进行多点或远距离通讯, 除原有CB920之软件功能外另新增多项软件功能, 适合不同的配料或包装系统使用.1.2有关术语自重:能使称重传感器产生输出电压的承载器本身的重量.分度间距:指显示间距与倍数的比例. 分度间距数值只能选择数值1、2、5中的某一个.激励电压:指由显示器提供用以驱动称重传感器的电压.目标配料份量:指待配物料的目标重量.过冲控制:当CB920X的读数大于或等于目标配料份量减去过冲量时, 慢速配料继电器则自动断电.过冲量:当快速和慢速继电器断电后, 有些物料由于已离开供料槽, 尚在半空中, 这些物料会继续自由下落至秤的承载器上, 这些自由下落的物料导致称重显示器读数的平均增量, 就是过冲量.测力与称重传感器:测力与称重传感器是一种将所受力或重量转换成电压的部件.一个测力与称重传感器包括两个部分:第一部分是能根据所受力大小而线性变形的金属部件;第二部分是可根据金属部件的变形大小而改变其电阻的应变片.传感器输出灵敏度:指从传感器输出的电压与激励电压的比率.最大量程:指为称重显示器设计(略去小数点后)可显示的最大数值.倍数:用来确定小数点位置或加在读数后零的个数.例如:如果读数为234, 则倍数显示器显示1023401234.1 23.4.01 2.34.001 .234.0001 .0234快速配料份量:当CB920X的读数大于或等于精计量而小于快速配料份量时, 则粗计量继电器自动断电.分辨率:指最大量程与显示分度间距之比例.秤量间距:指重量显示器对秤的承载器上单位标准重量变化所显示的数值.过冲量自动修正:过冲量自动修正公式为:过冲量(新值) = 过冲量(旧值) - [ (目标配料份量- 最终物料净重) /2 ]该修正在每次配料完后进行, 即存储器中的过冲量在所有物料配料完成后再进行修正, 且修正后的过冲量将用于下一次的配料, 如果过冲量为负值, 则不进行修正, 如果新过冲量大于或等于所需物料粗重量的粗计量, 则将新过冲量设定为所需物料重量之粗计量减1, 如果新过冲量大于999, 则将新过冲量设为999.TDC:卸料控制延迟时间. 当卸料时, 毛重量小于零位范围后的0.1至9.9秒延迟后才关闭卸料控制. 可设定的范围为01到99 (即0.1至9.9秒).TTC:允差检测延迟时间. 在配料时, 慢速配料控制关闭后的0.1至9.9秒延迟后才检测误差, 可设定的范围为01至99 (即0.1至9.9秒).1.3特点双显示器同时显示毛重和净重.是最小型的配料控制器, 其面板尺寸仅为96mm × 48mm.集重量显示器与配料控制器为一体.提供完整的物料配料控制功能.最多可控制四种不同种类的物料.所有配料份量数据皆通过面板按键输入, 并存储于存储器内.所有预置配料份量都具有断电保护功能.自动零位跟踪.按键后自动去皮重.所有物料具有各自的粗计量, 精计量和过冲量补偿.使用软件全数字式调校功能.可选RS485为标准串行输出输入口.通过RS485装置可实现多点通讯.通过RS232/RS485输出口输出配料资料.转换速率达200次/秒.显示精度最高达1/15000.RS232/RS485输入可用来预设置配料份量资料和系统功能资料.超出允差范围之检验.提供卸料控制功能.配料启动条件可通过菜单设定.配料自动除皮条件可通过菜单设定.可设定通电时自动归零.配料净重量显示保持功能可透过菜单设定.可设定过冲量最高范围以确保自动补偿功能不因机械故障而造成错误.慢速控制可设定延迟时间.控制比较次数设定, 可确保自动控制不因称体受冲击而造成错误控制.可设置启动除皮延迟时间.可设置除皮检测次数, 以免称体在不稳定的情形下造成除皮错误.快速及慢速之禁止比较时间可独立设置.温度系数少于(读数之±0.0008%+0.3数字)/℃.备有双重数字滤波.配量低于宽容度时, 可作添量配料.模拟输出选配件.BCD输出选配件.串行打印机选配件.CB920X软件选配件, 它可提供配料过程可作三级控制的物料配料控制.使用易拆式插座.2. 技术规格2.1 一般规格1. 电源: 交流110V, 220V±10%,50/60赫兹(出厂前指定)2. 消耗功率: 9瓦3. 工作温度: -10℃至50℃(14℉至122℉)4. 相对湿度: 90%相对湿度(无凝结水)5. 电源滤波器: 内置2.2 数字部份1. 重量显示: 7段发光二极管2 LED显示: 采用毛重和净重双显示方式3. 指示灯亮的含意: M1, M2, M3, M4, 置零和重量变动4. 负数显示: 在最左边数字显示" " 号5. 超载显示: 显示"6. 显示量程范围: 由500至100,0007. 显示分度间距: 1, 2, 5, 10, 20或508. 小数点位置: 可选择4个不同位置9. 输出容量: 开集极输出, 最高80V, 0.3A2.3 模拟部份1. 适用的传感器类型: 适用于所有电阻应变式测力与称重传感器2. 传感器输入电压: 直流电10 V±5 % , 最大可供150毫安3. 输入灵敏度: 0.5μV/格至200μV/格4. 输入阻抗: 10兆欧姆5. 零位电压可调范围: 0.05毫伏至15毫伏6. 温度系数: 小于(读数的0.0008%+0.3数字) /℃7. 非线性误差: 不大于满刻度的0.0067%8. 采样方法: Delta-Sigma方法9. 采样速度: 约每秒200次10.内部分辨率: 1,000,00011.显示分度数: 300至15000分度2.4 串行RS232/RS485资料输出接口2.4.1标准: 输出采用串行EIA-RS232/RS485标准2.4.2 RS232/RS485的选择: 通过跳接线和开关进行选择选择RS232, 则主板上ST61的跳接线插在“232C” 位置, SW61的开关拨到“232C” 位置, ST62的跳接线插在“OFF” 位置;选择RS485, 则主板上ST61的跳接线插在“485” 位置, SW61的开关拨到“485” 位置, ST62的跳接线插在“OFF” 位置;多机并联时, 最后一台仪表主板上的ST62应置于“ON” 位置, 实质为给通讯口并上一个200欧姆的电阻.2.4.3 讯号形式:数据位= 7奇偶校验位= 1(偶数)终止位= 1编码标准= 美国ASCII编码标准波特速率= 2400, 4800, 9600, 19200波特结束码= CR/LF2.4.4 RS232/RS485操作指令当RS232/RS485输入端RXD收到指令后, 显示器才会采取相关操作.这些指令适用于所有操作模式.CB920X对指令之应答说明1. Z.TRACK T=0 零位跟踪时间设定为零2. Z.TRACK T=1 零位跟踪时间设定为1秒3. Z.TRACK D=1 零位跟踪范围设定为1个显示分度间距4. Z.TRACK D=2 零位跟踪范围设定为2个显示分度间距5. Z.TRACK D=4 零位跟踪范围设定为4个显示分度间距6. MOTION 1D/S 重量变动检测设定为每秒1个显示分度间距7. MOTION 3D/S 重量变动检测设定为每秒3个显示分度间距8. D . P 4 倍数设定为0.00019. D . P 3 倍数设定为0.00110. D . P 2 倍数设定为0.0111. D . P 1 倍数设定为0.112. D . P 0 倍数设定为113. d 1 分度间距设定为114. d 2 分度间距设定为215. d 5 分度间距设定为516. MAX.CAP 500 最大量程设定为50017. MAX.CAP xxxxx 最大量程设定为xxxxx,可选之范围为500-100,00018. MAX.CAP 100,000 最大量程设定为100,00019. BAUD 2400 波特速率设定为2400波特20. BAUD 4800 波特速率设定为4800波特21. BAUD 9600 波特速率设定为9600波特22. BAUD 19200 波特速率设定为19200波特23. Z.BAND x 零位范围设定为x%. x 之范围是1至1024. UNIT kg 重量单位设定为公斤25. UNIT t 重量单位设定为吨26. UNIT OFF 重量单位取消27. CAL ZERO 执行零位调校28. CAL SPAN 执行秤量间距调校29. M1 FINAL xxxxx 物料1的目标配料份量设置为xxxxx30. M2 FINAL xxxxx 物料2的目标配料份量设置为xxxxx31. M3 FINAL xxxxx 物料3的目标配料份量设置为xxxxx32. M4 FINAL xxxxx 物料4的目标配料份量设置为xxxxx33. M1 COARSE xxxx 物料1的快速配料份量设置为xxxx34. M2 COARSE xxxx 物料2的快速配料份量设置为xxxx35. M3 COARSE xxxx 物料3的快速配料份量设置为xxxx36. M4 COARSE xxxx 物料4的快速配料份量设置为xxxx37. M1 FINE xxx 物料1的慢速配料份量设置为xxx38. M2 FINE xxx 物料2的慢速配料份量设置为xxx39. M3 FINE xxx 物料3的慢速配料份量设置为xxx40. M4 FINE xxx 物料4的慢速配料份量设置为xxx41. YES 无错误发生或确认为对42. NO 接到不正确的指令或确认为错43. ERROR x 在调校过程中发生了编号为x的错误44. TARE xxxx 输出皮重值(XXXX是当前皮重,YYYY是参考皮重)YYYY45. ZERO xxxxxx 输出零位漂移46. OL, NT, +0123.45kg CRLF 回答READ提问OL = 超载ST = 稳定US = 不稳定NT = 净重GS = 毛重CRLF = 打印机换行47. RLY 1 物料输出口被RLY指令启动48. RLY D 卸料输出口被RLY指令启动49. TOL 3 允差被设为0.3%50. ZERO x 可按ZERO键回零范围51. TOL xx 允差是多少52. TDC xx 卸料控制延迟时间是多少53. TTC xx 允差检测延迟时间是多少54. BCD xx BCD输出次数55. CIT xx 禁止比较56. FILTER xx 数字滤波57. SDT xx 起动时间延迟58. EFF xx 有效补偿功能59. ETC xx 有效检查超差功能60. ATE xx 自动除皮CB920X的输入指令:指令说明1.FUNC 将CB920X 设定到功能设定方式2.CAL 将CB920X 设定到调校方式3.SET 将CB920X 设定到配料份量设定方式4.READ 要求读数5.TARE 皮重是多少6.TARE ON 设定皮重7.TARE OFF 取消设定皮重8.ZERO 零位漂移是多少9.ZERO ON 设置零位漂移10.ZERO OFF 重新设定零位漂移11.PROG RS232/RS485的操作方式置为指令式12.AUTO RS232/RS485的操作方式置为自动式13.CONT RS232/RS485的操作方式置为连续式14.RLY 询问哪一个输出被RLY指令启动15.RLY 1 启动某一个输出, 只有在正常称重方式下方可启动, 1~ 4为各物料相对之输出, C为快速, F为慢速, D为卸料, T为超差.16.RLY OFF 关闭被RLY指令开启的输出17.ABO 放弃生产18.ST 启动生产19.KEY ON 使按键控制功能无效20.KEY OFF 使按键控制功能有效21.DSEL AUTO 选择使用自动RS232/RS485输出方式22. DSEL GROSS 选择使用毛重RS232/RS485输出方式23. DSEL NET 选择使用净重RS232/RS485输出方式注意: 输入的指令必须以 <CR><LF> 确认, 例如“READ” 指令的ASCII输入为“52, 45, 41, 44, 0D, 0A” .CB920X 发出的配料资料:注意1: 每一种物料所配份量储存于CB920X 中, 当所有物料都配完后, 一次性输出来.NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18注意2: 当目标重量为零后,将没有该物料资料的输出. RS232/RS485的操作方式:A) 指令方式(PRO)CB920X 完成配料后, 在RS232/RS485输出端送出一个 “<ENQ><CR><LF>”, 若在 RXD 输入口收到“<ACK><CR><LF>”, 则资料可输出, 次数不限. 在下一次生产启动时, 未收到 “<ACK><CR><LF>” 的指令, 则该次之配料数据将被取消. 重量数据亦需输入指令 “READ<CR><LF>” 才输出. 数据输出次数不限, 下次启动生产时方清洗报表.M M M M 1 2 4 3 , , , , N N N N T T T T , , , , ++ + + 1 2 1 1 9 0 5 0 . . . . 9 0 0 0 9 0 0 0 k k k k g g g g LL LL C C C CB)连续方式(CONT)在这种方式下, 重量资料会自动不断输出而不需输入指令. 配料数据亦在生产完成时自行输出.C)自动方式(AUTO)在这种方式下, 重量资料需有指令“READ<CR><LF>”输入才送到输出. 当生产完成后, 配料数据则不须指令便会自动输出.2.4.5 资料格式:状态1:M1 物料1M2 物料2M3 物料3M4 物料4状态2:NT = 净重GS = 毛重AB = 生产被终断数字重量资料:数字重量资料共包括8位字符, 数字从0到9,符号有: 负号“-”, 正号“+”, 空位“ ”和小数点.单位: kg = 公斤 t = 吨 2.4.6 输出接口电路图2.4.7 可设定的参数 波特速率:2400 波特.4800波特9600 波特19200 波特操作方式: 连续方式 指令方式自动方式2.4.8 接线引脚端子说明RS232插座PHOTO OUTPUTRS232引脚端子名称讯号含义RXD 指令数据(RXD)输入TXD COM 地电位不要将CB920X 安装在阳光直晒处, 并须避免突然之温度变化、振动或被风吹. 当温度大约为20℃或68°F 、相对湿度约为50%时, 可获得最佳之性能. 通过电源线将CB920X 后端接地, 并保证接触良好, 不要将地线接至其它设备之地线. 模拟输入或输出讯号对电子噪声很敏感, 故不应将这些模拟输入或输出讯号之电线结扎在一起, 以避免可能造成的干扰, 并请将这些电线远离交流电源, 尽量缩短所有电线或同轴电缆之长度.如果当地交流电有可能超过±10 %的波动, 则必须使用电源稳压器稳定电源. 3.2 称重显示器输入灵敏度称重显示器输入灵敏度(A)可通过以下方程式计算出来:M A T E R IA L 1M A T E R IA L 2M A T E R IA L 3M A T E R IA L 4O P T I O N对于CB920X 而言, A 必须大于或等于0.5μV/格. 3.3 传感器与显示器的连接法传感器的模拟输出及RS232板之输入或输出讯号对电子噪声很敏感, 故不要将这些电线结扎在一起, 以避免可能导致的干扰, 并请将这些电线远离交流电源.SIG+ SIG- EXC+ EXC- SHD传感器在满载荷时的输出电压–传感器在自重时的输出电压A= × 秤量间SIGSIGEXC3.4前面板说明前 面 板 外 观512 3 467 8 9 101. M1 指示灯: 亮时显示在配物料 1.2. M2 指示灯 : 亮时显示在配物料 2.3. M3 指示灯 : 亮时显示在配物料 3.4. M4指示灯: 亮时显示在配物料 4. 5. ZERO 指示灯: 亮时显示零.CB920XENTER MODE TARE ZEROMOTIZEM M M M6. MOTION 指示灯: 亮时显示重量变动检测.7. ENTER 按键: 接受输入数据.8. MODE 按键: 选择功能设定方式.9. TARE 按键: 如果没有重量变动, 且卸料继电器处于关闭状态, 皮重将储存于存贮器, 显示器则显示零. 该按键可将方式改为NET方式.10. Z ERO 按键 : 如果初始调校之零位漂移不大于满量程百分之一至百分之十(参考功能设定) , 而又没有检测到重量变动, 则可按ZERO按键令显示器显示零.3.5 后面板说明3.5.1后面板外观CB920XCB920XA M1M2M3M4COARSEFINE SIG+SIG-EXC+EXC-SHIELDM1M2M3MEDIUMCOARSEFINE3.5.2 控制输出插座插座编号 讯号含义 M1 物料1输出口 M2 物料2输出口 M3 物料3输出口M4 (MEDIUM) 物料4输出口(中速配料输出口) COARSE 快速配料输出口 FINE 慢速配料输出口 DISCHARGE 卸料输出口 TOLERANGE 误差输出口 EMTR COM 输出口共通点 TXD 资料(TXD)输出 RXD 指令数据(RXD)输入 COM地电位+ 模拟输出(选配件) COM地电位SIG+ 讯号输入+ SIG- 讯号输入-S I G +S I G -E X C +E X C -S H I E L DEXC+ 激励电压输出+EXC- 激励电压输出-SHIELD 屏蔽START 生产启动COM 地电位EARTH 地线AC 交流电源AC 交流电源输出口可连接5伏至24伏直流电压, 最大驱动电流为0.3A. 为了将CB920X同外接控制设备隔离开以减少干扰, 应采用直流供电的缓冲继电器. 为了抑制由于接触连接造成的任何瞬间放电的噪音, 应将二极管同直流供电的缓冲继电器线圈并联.外接缓冲继电器地电位二极管M4第四种物料快速配料 慢速配卸料 超差生产用刻启动. CB920X 物料插座(从M1至M4插座). 注: 为使CB920X 启动抗干扰能达到设计的效果, 可更换以下的方法连接起动线.说明: (按钮开路)0.5秒以上, 然后放手(按钮闭合)便可达到启动生产. 快速和慢速配料控制可使用以下提供的继电器逻辑电路.M1M3MMMM3M4+24M3慢速M4慢慢速在各种情况下, 缓冲继电器应采用直流电源, 以确保缓冲继电器没有过荷, 可驱动相应之启动器或电源控制设备. 每一个直流电驱动之缓冲继电器或线圈应加接二极管以减低噪音.24伏直流电源供应如果需要交流电供电之继电器, RC 抑制器应与继电器线圈并连. 该抑制器也应用于电感控制设备. 3.6 功能设置按键在功能设置过程中, 此键用于改变所选数字的位置, 该位置之小数点闪烁, 表示正在修改该位置之数据, 而进入功能设置后, 按此键可进入第二或第三层次的功能参数设置.按键在功能设置过程中, 此键用于改变所选数字数值的大小.按键在功能设置过程中, 按此键选择下一个功能设置.按键在功能设置过程中, 按此键退出功能设置.3.6.1启动功能设置之步骤按键, 不要放开, 按键大约两秒, 显示器显示 “ ” 后, 才可设置参数.CB92在改变以下任何参数之前, 按键返回到称重模式.如果倍数, . 如果最大量程, 分度间距或倍数被更改,” , 说明必须进行调校了. 详情可参阅3.8. 3.6.2零位跟踪功能有两个参数用于确定零位跟踪功能: 第一个是零位跟踪范围, 第二个是零位跟踪时间. 如果在大于或等零位跟踪时间内, 重量在零位跟踪范围内, 那么, 读数将被跟踪至零.3.6.3零位跟踪时间当显示 ” 时, 可选择 “0.5”, “1.0”, “1.5”, “2.0” 或 “off”.0.5~2.0 = 0.5至2.0秒的延迟时间off = 无零位跟踪按 “ MODE ” 键, 进入下一步功能设置状态. 3.6.4零位跟踪范围当显示 “3.0”, “3.5”, “4.0”, “4.5” 或 “5.0”.0.5~5.0 = 0.5至5.0个显示分度间距按 “ MODE ” 键, 进入下一步功能设置状态. 3.6.5重量变动检测时间或 “off” .1 = 一秒2 = 二秒off = 无动态检测功能按 .3.6.6重量变动检测范围或 “10”. 1 = 每单位时间变动一个显示分度间距即只要读数在一/二秒内改变一个显示分度间距, MOTION 指示灯会发亮. 2 =每单位时间变动二个显示分度间距即只要读数在一/二秒内改变二个显示分度间距, MOTION 指示灯会发亮. 5 =每单位时间变动五个显示分度间距即只要读数在一/二秒内改变五个显示分度间距, MOTION 指示灯会发亮.10 =每单位时间变动十个显示分度间距即只要读数在一/二秒内改变十个显示分度间距, MOTION 指示灯会发亮.CB92按 .3.6.7倍数或小数点选择.显示格式倍数1010.10.010.0010.0001CB92按 “ MODE ” 键, 进入下一步功能设置状态.3.6.8分度间距当显示 ” 时, 可选择 “1”, “2” 或 “5”.显示分度间距 = 分度间距 × 倍数按 .3.6.9最大量程当显示 ” 时, 可选择500 ~ 100,000之量程按 .分辨率最大分辨率为1/15000, 最小分辨率为1/300. 如果设定分辨率超出该范围将视为无效. 这种情况必须加以避免.分辨率= 显示分度间距/ 最大量程注意: 分辨率不得超过1/15000.波特率当显示” 时, 可选择2400﹑4800﹑9600及19200波特.注: 更改波特率后, 必须关闭电源. 当电源再次接通时, 方可更改波特率.按 “ MODE ”键, 进入下一步功能设置状态.零位范围当显示 “” 时, 零位范围(ZERO BAND)可选择的范围是0.1至10, 1至100表示零位范围是生产配料总确定量的0.1%至10%. 如生产配料的总确定量是100kg , 当零位范围选择1%时, 称料斗卸料后如有小于1%的物料, 卸料输出讯号便终断.按 .操作方式的操作方式. ”: 连续输出方式不需指令即可输出重量数据, 生产完成后, 将自动输出报表.“ ” : 指令方式正确指令(即READ<CR><LF>)输入后, 才可有重量数据或数据输出, 生产完成后, 输出“<ENQ><CR><LF>” (ASCII码为“05, 0D, 0A”). 当“<ACK><CR><LF>” 输入后, 生产报表方可输出,次数不限. 但当生产启动时, 仍未有“<ACK>” 输入, 则生产报表将被取消. ( “<ACK>” 在ASCII码上为“06” )数据输出次数不限, 下次启动生产时方清洗报表.“”: 自动方式正确指令(READ<CR><LF>)输入后, 才可有重量数据或数据输出, 生产完成后, 报表自动输出.按“ MODE ” 键, 进入下一步功能设置状态.单位当显示” 时, 可选择的单位有kg 、t 或不设定重量单位.= 公斤= 吨= 不设定重量单位CB92按 . 按 进入第二层次功能设置状态.3.6.16当显示 “ ” 时, 可选择1%至10%范围.1%至10% 按键回零范围.按 “MODE ” 键, 进入下一步功能设置状态.允差范围CB92当显示” 时, 可选择0.1%至9.9%范围.0.1%至9.9%是目标量的百分比.按“MODE ” 键, 进入下一步功能设置状态.延迟卸料控制时间当显示” 时, 可选择0.1s至9.9s范围.时启启时零位CB920.1s 至9.9s是设定延迟卸料控制时间. 当卸料达到零位范围内再延迟0.1s~9.9s后便将卸料控制输出讯号终断.按“MODE ” 键, 进入下一步功能设置状态.延迟检查超差时间当显示” 时, 可选择0.1s至9.9s范围.0.1s至9.9s是设定延迟检查超差时间, 还需要配合检查超差(ETC)使用..禁止比较时间(仅适用于粗计量)时tt当贮料仓向称料斗初始供给物料和结束供给物料时, 由于物料的冲击和骤停,称料斗会因此而产生抖动振荡使仪表的显示值不稳定, 尤其是称料斗设计轻型, 当物料初始冲入称料斗时, 由于重力加速度的作用, 称料斗接受的重量信号会大于物料的实际重量, 因此在这段时间内, 可采取停止采样的禁止比较时间的方法, 提高显示值的准确性和稳定性.按“TARE” 键, 选择0.1s ~ 9.9s 范围.0.1s ~9.9s是粗计量的禁止比较时间.按.禁止比较时间(仅适用于精计量)启关配重CB92按 “TARE” 键, 选择 0.1s ~ 9.9s 范围.0.1s ~9.9s 是精计量的禁止比较时间.按 . 数字滤波“64”, “128” 或 “256”. 称料斗受其本身的固有频率影响和外界振动的传导, 会产生随机振动, 从而使仪表的显示值显示不稳定, 视其振动的振幅大小可选择适当的滤波系数在显示器中予以消除, 振幅小时, 可选择低端系数, 振幅大时, 可选择高端系数.按 .第二阶段数字滤波时按 0 = 无效 1 = 有效按 .第二阶段滤波范围按当毛重变动在每秒设定的滤波范围内, 则第二阶段的数字滤波器启动, 如超出设定的范围, 则此滤波器关闭.注: 仅当第二阶段数字滤波设定为1时, 此功能设置才有效, 否则跳过此项功能设置, 而进入下一步功能设置状态.按 .启动延迟时间检查重CB92当显示 ” 时, 可选择0.0s 至9.9s 范围. 0.0s 至9.9s 是设定延迟启动时间.当卸料门关闭时, 由于机械的作用, 会使称料斗抖动, 从而使显示值在零位附近 变动, 可以采用延迟启动的时间, 以保证有充分的时间使卸料门关紧, 提高零位 的稳定性..自动补偿启慢落卸当显示 ” 时, 99次范围. 0= 禁止自动补偿1 ~99= 每1至99次做一次自动补偿按 “MODE ” 键, 进入下一步功能设置状态.检查超差0 = 禁止检查超差1 ~99 = 每1至99次检查一次超差. 输出次数CB92之输出速度为15次/秒﹑50次/秒﹑ 100次/秒或200次/秒..生产自动去皮当, 保持到掉电前. 当ATE=1~99, 每生产1~99中更新一次参考皮重. 3.6.30 按 “ ZERO ” 键, 进入第三层次功能设置状态.“1”. 0 = 禁止1 = 允许, 在上电时, 承重器之负载在归零范围内, 即以该负载为当时之零点,并显示为零(此操作如在上电后, 按 “ ZERO ” 键).按 .首次去皮生产按 “TARE” 键, 选择 “0” 或 “1”.0 = 电源接通后的第一次批次生产不执行去皮1 = 电源接通后的第一次批次生产执行去皮对于生产自动去皮(ATE), 需根据开始去皮生产(STO)确定电源接通后的第一次生产是否执行去皮, 两者之间关系如下:如STO=0及ATE=0, 即皮重等于零及不作任何除皮, 亦即为毛重配料.. 启动生产条件或 “ 3 ” 之条件下方可启动生产.0 = 除了配料、物料参数设置、功能设置、调校之外任何时间 1 = 净重在归零范围之内2 = 毛重在归零范围之内3 = 毛重在归零范围之内且无生产按 .自动去皮条件“1”.0 = 无限制1 = 毛重必须小于归零范围, 否则使用上一次生产时之皮重.按.去皮延迟时间。
BAT54C-V-GS08;中文规格书,Datasheet资料
BAT54-V-G, BAT54A-V-G, BAT54C-V-G, BAT54S-V-GDocument Number 83344Rev. 1.0, 28-Jun-10Vishay Semiconductors1For technical questions within your region, please contact one of the following:DiodesAmericas@ , DiodesAsia@ , DiodesEurope@Small Signal Schottky Diodes, Single and DualFeatures•These diodes feature very low turn-on voltage and fast switching •These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges•AEC-Q101 qualified•Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/ECMechanical DataCase: SOT-23Weight: approx. 8.1 mg Packaging codes/options:18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/boxParts TableAbsolute Maximum RatingsT amb = 25°C, unless otherwise specifiedNote 1)Device on fiberglass substrate, see layout on next page.Thermal CharacteristicsT amb = 25°C, unless otherwise specifiedNote1) Device on fiberglass substrate, see layout on next page.** Please see document “V ishay Material Category Policy”: /doc?99902PartOrdering codeT ype markingRemarks BAT54-V -G BA T54-V -G-18 or BAT54-V -G-08L8Tape and reel BAT54A-V -G BAT54A-V -G-18 or BAT54A-V -G-08L46Tape and reel BAT54C-V -G BAT54C-V -G-18 or BAT54C-V -G-08L47Tape and reel BAT54S-V -GBAT54S-V -G-18 or BAT54S-V -G-08L48Tape and reelParameterT est conditionSymbol V alue Unit Repetitive peak reverse voltage V RRM 30V Forward continuous current I F 200 1)mA Repetitive peak forward current I FRM 300 1)mA Surge forward current current t p < 1 s I FSM 600 1)mA Power dissipationP tot230mWParameterTest conditionSymbol V alue Unit Thermal resistance junction to ambient air R thJA 430 1)K/W Junction temperature T j 125°C Storage temperature rangeT stg- 65 to + 150°C 2Document Number 83344Rev. 1.0, 28-Jun-10BAT54-V-G, BAT54A-V-G, BAT54C-V-G, BAT54S-V-GVishay Semiconductors For technical questions within your region, please contact one of the following:DiodesAmericas@ , DiodesAsia@ , DiodesEurope@ Electrical CharacteristicsT amb = 25°C, unless otherwise specifiedLayout for R thJA testThickness:Fiberglass 1.5 mm (0.059 in.)Copper leads 0.3 mm (0.012 in.)Typical CharacteristicsT amb = 25°C, unless otherwise specifiedParameterTest condition Symbol Min.Typ.Max.Unit Reverse Breakdown voltage I R = 100 µA (pulsed)V (BR)30V Leakage currentPulse test t p < 300 µs, δ < 2 % atV R = 25 V I R 2µA Forward voltageI F = 0.1 mA, t p < 300 µs, δ < 2 %V F 240m V I F = 1 mA, t p < 300 µs, δ < 2 %V F 320m V I F = 10 mA, t p < 300 µs, δ < 2 %V F 400m V I F = 30 mA, t p < 300 µs, δ < 2 %V F 500m V I F = 100 mA, t p < 300 µs, δ < 2 %V F 800m V Diode capacitance V R = 1 V , f = 1 MHz C D 10pF Reverse recovery timeI F = 10 mA to I R = 10 mA,i R = 1 mA, R L = 100 Ωt rr5nsFigure 1. Typical Forward V oltage Forward Current vs.V arious TemperaturesFigure 2. Diode Capacitance vs. Reverse V oltage V RBAT54-V-G, BAT54A-V-G, BAT54C-V-G, BAT54S-V-GDocument Number 83344Rev. 1.0, 28-Jun-10Vishay Semiconductors3For technical questions within your region, please contact one of the following:DiodesAmericas@ , DiodesAsia@ , DiodesEurope@Package Dimensions in millimeters (inches): SOT-23Figure 3. Typical V ariation of Reverse Currentvs. V arious TemperaturesLegal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereb y certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Revision: 12-Mar-121Document Number: 91000分销商库存信息:VISHAY-GENERAL-SEMICONDUCTOR BAT54C-V-GS08。
BCW32LT1G;中文规格书,Datasheet资料
BCW32LT1G General Purpose TransistorsNPN SiliconFeatures•These Devices are Pb −Free, Halogen Free/BFR Free and are RoHSCompliantMAXIMUM RATINGSRatingSymbol Value Unit Collector-Emitter Voltage V CEO 32Vdc Collector-Base Voltage V CBO 32Vdc Emitter-Base VoltageV EBO 5.0Vdc Collector Current − ContinuousI C100mAdcStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.THERMAL CHARACTERISTICSCharacteristicSymbol Value Unit Total Device Dissipation FR-5 Board (1)T A = 25°CDerate above 25°C P D2251.8mWmW/°C Thermal Resistance,Junction −to −AmbientR q JA 556°C/W Total Device DissipationAlumina Substrate,(2) T A = 25°C Derate above 25°C P D3002.4mW mW/°C Thermal Resistance,Junction −to −AmbientR q JA417°C/W Junction and Storage TemperatureT J , Tstg−55 to +150°C 2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.Device Package Shipping †ORDERING INFORMATIONSOT −23 (TO −236AB)CASE 318STYLE 6MARKING DIAGRAMCOLLECTOR1EMITTERBCW32LT1GSOT −23(Pb −Free)3000 / Tape & Reel†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.1D2 M G G D2=Device Code M =Date Code*G =Pb −Free Package(Note: Microdot may be in either location)*Date Code orientation and/or overbar may vary depending upon manufacturing location.ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOFF CHARACTERISTICSCollector −Emitter Breakdown Voltage (I C = 2.0 mAdc, V EB = 0)V (BR)CEO 32−−Vdc Collector −Base Breakdown Voltage (I C = 10 m Adc, I E = 0)V (BR)CBO 32−−Vdc Emitter −Base Breakdown Voltage (I E = 10 m Adc, I C = 0)V (BR)EBO 5.0−−VdcCollector Cutoff Current (V CB = 32 Vdc, I E = 0)(V CB = 32 Vdc, I E = 0, T A = 100°C)I CBO−−−−10010nAdc m AdcON CHARACTERISTICSDC Current Gain(I C = 2.0 mAdc, V CE = 5.0 Vdc)h FE 200−450−Collector −Emitter Saturation Voltage (I C = 10 mAdc, I B = 0.5 mAdc)V CE(sat)−−0.25VdcBase −Emitter On Voltage(I C = 2.0 mAdc, V CE = 5.0 Vdc)V BE(on)0.55−0.70VdcSMALL −SIGNAL CHARACTERISTICSOutput Capacitance(I E = 0, V CB = 10 Vdc, f = 1.0 MHz)C obo −− 4.0pF Noise Figure(I C = 0.2 mAdc, V CE = 5.0 Vdc, R S = 2.0 k W , f = 1.0 kHz, BW = 200 Hz)NF−−10dBTYPICAL NOISE CHARACTERISTICS(V CE = 5.0 Vdc, T A = 25°C)Figure 1. Noise Voltage f, FREQUENCY (Hz)5.07.010203.0Figure 2. Noise Currentf, FREQUENCY (Hz)2.01020501002005001 k 2 k5 k10 k1005020105.02.01.00.50.20.1e n , N O I S E V O L T A G E (n V )I n , N O I S E C U R R E N T (p A )1020501002005001 k 2 k5 k10 kNOISE FIGURE CONTOURS(V CE = 5.0 Vdc, T A = 25°C)Figure 3. Narrow Band, 100 Hz I C , COLLECTOR CURRENT (m A)500 k Figure 4. Narrow Band, 1.0 kHzI C , COLLECTOR CURRENT (m A)10R S , S O U R C E R E S I S T A N C E (O H M S )R S , S O U R C E R E S I S T A N C E (O H M S )Figure 5. WidebandI C , COLLECTOR CURRENT (m A)10R S , S O U R C E R E S I S T A N C E (O H M S )Noise Figure is defined as:NF +20log 10ǒe n 2)4KTR S )I n 2R S 24KTR SǓ1ń2= Noise Voltage of the Transistor referred to the input. (Figure 3)= Noise Current of the Transistor referred to the input.(Figure 4)= Boltzman’s Constant (1.38 x 10−23 j/°K)= Temperature of the Source Resistance (°K)= Source Resistance (W )e n I n K T R S501002005001 k 10 k 5 k 20 k 50 k 100 k 200 k 2 k 203050701002003005007001 k10203050701002003005007001 k500 k 1002005001 k 10 k 5 k 20 k 50 k 100 k 200 k 2 k 1 M 500 k 501002005001 k 10 k 5 k 20 k 50 k 100 k 200 k 2 k 203050701002003005007001 kFigure 6. DC Current GainI C , COLLECTOR CURRENT (mA)4000.004h , D C C U R R E N T G A I NF EFigure 7. Collector Saturation Region I C , COLLECTOR CURRENT (mA)1.4Figure 8. Collector CharacteristicsI C , COLLECTOR CURRENT (mA)V , V O L T A G E (VO L T S )1.6Figure 9. “On” Voltages I B , BASE CURRENT (mA)0.40.60.81.00.2V C E , C O L L E C T O R -E M I T T E R V O L T A G E (V O L T S )Figure 10. Temperature CoefficientsV CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)40608010020I C , C O L L E C T O R C U R R E N T (m A )40600.0060.010.020.030.050.070.10.20.30.50.71.02.03.05.07.010203050701001.21.00.80.60.40.20- 2.40.8- 1.6- 0.820010080V , T E M P E R A T U R E C O E F F I C I E N T S (m V /C )°θC , C A P A C I T A N C E (p F )Figure 11. CapacitanceV R , REVERSE VOLTAGE (VOLTS)101.02.03.05.07.00.10.20.5 1.0 2.0 5.01020500.05PACKAGE DIMENSIONSSOT −23 (TO −236)CASE 318−08ISSUE ANNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.4.318−01 THRU −07 AND −09 OBSOLETE,NEW STANDARD 318−08.VIEW CDIM A MIN NOM MAX MIN MILLIMETERS0.89 1.00 1.110.035INCHESA10.010.060.100.001b 0.370.440.500.015c 0.090.130.180.003D 2.80 2.90 3.040.110E 1.20 1.30 1.400.047e 1.78 1.90 2.040.070L 0.100.200.300.0040.0400.0440.0020.0040.0180.0200.0050.0070.1140.1200.0510.0550.0750.0810.0080.012NOM MAX L1STYLE 6:PIN 1.BASE2.EMITTER3.COLLECTOR2.10 2.40 2.640.0830.0940.104H E 0.350.540.690.0140.0210.029*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*ǒmm inchesǓSCALE 10:1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息: ONSEMIBCW32LT1G。
M57962CL-01;中文规格书,Datasheet资料
1Gate DriverM57962CL-01Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272Hybrid Integrated Circuit For Driving IGBT ModulesDescription:M57962CL-01 is a hybridintegrated circuit designed for driving n-channel IGBT modules in any gate amplifier application. This device operates as an isolation amplifier for these modules and provides the required electrical isolation between the input and output with an opto-coupler. Short circuit protection is provided by a built in desaturation detector. A fault signal is provided if the short circuit protection is activated.Features:□Electrical Isolation betweeninput and output with opto-couplers.(V iso = 2500V RMS for 1 min.)□Two supply drive topology □Built in short circuit protectioncircuit with a pin for fault output □Variable fall time on activity ofshort circuit protection□TTL compatible input interface Application:To drive IGBT modules for inverter,AC Servo systems, UPS, CVCF inverter, and welding applications.Recommended Modules:V CES = 600V Series(up to 800A Class)V CES = 1200V Series(up to 400A Class)/Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272M57962CL-01Hybrid IC for IGBT Gate DriverAbsolute Maximum Ratings, T a =25°C unless otherwise specifiedItem Symbol Test Conditions Limit Units Supply Voltage V CC DC 18VoltsV EE DC-15Volts Input Voltage V I Applied between: 13 – 14-1 ~ 7Volts Output Voltage V O Output Voltage “H”V CC Volts Output Current I OHP Pulse Width 2µs, f ≤ 20kHz -5AmperesI OLP Pulse Width 2µs, f ≤ 20kHz5Amperes Isolation Voltage V RMS Sinewave Voltage 60Hz, 1 min.2500Volts Case T emperature T c85°C Operating Temperature T opg-20 ~ 60°C Storage Temperature t stg-25 ~ 100°C Fault Output Current I FO Applied 8 pin20mA Input Voltage V R1Applied 1 pin50Volts2/Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272M57962CL-01Hybrid IC for IGBT Gate DriverElectrical Characteristics, T a = 25°C, V CC = 15V, V EE = -10V unless otherwise specifiedCharacteristics Symbol Test Conditions Min.Typ.Max.UnitsSupply Voltage V CC Recommended Range14 15—VoltsV EE Recommended Range -7—-10Volts Pull-up Voltage on Input Side V IN Recommended Range 4.75 5.00 5.25Volts“H” Input Current I IH Recommended Range15.21619mASwitching Frequency f Recommended Range——20kHzGate Resistor R G Recommended Range2——Ω“H” Input Current I IH V IN = 5V—16—mA“H” Output Voltage V OH1314—Volts“L” Output Voltage V OL-8-9—Volts“L-H” Propagation Time t PLH I IH = 16mA—0.5 1.0µs“L-H” Rise Time t r I IH = 16mA—0.6 1.0µs“H-L” Propagation Time t PHL I IH = 16mA—0.8 1.3µs“H-L” Fall Time t f I IH = 16mA—0.4 1.0µsTimer t timer Between start and cancel 1.0— 2.0ms(under input sign “L”)Fault Output Current I FO Applied 8 pin, R = 4.7kΩ— 5.0—mAControlled Time Detect Short Circuit 1t trip1Pin1: 15V and more, Pin 2 : Open— 2.6—µsControlled Time Detect Short Circuit 2*t trip2Pin1: 15V and more,— 3.0—µsPin 2 – 4 : 1000pF (Connective Capacitance)SC Voltage V SC SC Detect Voltage15——Volts*Length of wiring of condenser controlled time detect short circuit is within 5cm from 2 and 4 pin coming and going.3/4M57962CL-01Hybrid IC for IGBT Gate DriverPowerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272AMBIENT TEMPERATURE, T a , (°C) P R O P A G A T I O N D E L A Y T I M E "L -H ", t P L H , (µs ) P R O P A G A T I O N D E L A Y T I M E "H -L ", t P H L , (µs )PROPAGATION DELAY TIME VS. AMBIENT TEMPERATURE CHARACTERISTICS (TYPICAL)1.62040601.21.41.00.60.80.20.4080INPUT SIGNAL VOLTAGE, V I , (VOLTS) P R O P A G A T I O N D E L A Y T I M E "L -H ", t P L H , (µs ) P R O P A G A T I O N D E L A Y T I M E "H -L ", t P H L , (µs )PROPAGATION DELAY TIME VS. SIGNAL VOLTAGE CHARACTERISTICS (TYPICAL)1.634561.21.41.00.60.80.20.407AMBIENT TEMPERATURE, T a , (°C)C O N T R O L L ED T I ME D E T E C T S H O R T C I R C U I T , t t r i p 1, t t r i p 2, (µs )CONTROLLED TIME DETECT VS. AMBIENT TEMPERATURE CHARACTERISTICS (TYPICAL)802040606753412080CONNECTIVE CAPACITANCE, C trip , (pF)PIN: 2 4C O N T R O L L ED T I ME D E T E C T S H O R T C I R C U I T , t t r i p , (µs )CONTROLLED TIME DETECT VS. CONNECTIVE CAPACITANCECHARACTERISTICS (TYPICAL)80200040006000675341208000AMBIENT TEMPERATURE, T a , (°C)P O W E R D I S S I P A T I O N , P D , (W A T T S )POWER DISSIPATION VS. AMBIENT TEMPERATURE(MAXIMUM RATING)020*******3412010000.020.040.080.06503040102000.1SUPPLY VOLTAGE, V CC , (VOLTS)APPLIED BETWEEN: 4 6D I S S I P A T IO N C U R R E N T , (m A )DISSIPATION CURRENT VS. SUPPLY VOLTAGE INPUT SIGNAL "L" (TYPICAL)FA L L T I M E O F S H O R T C I R C U I T , t 1, t 2, (µs )SLOW SHUTDOWN SPEED (t 1, t2) VS. C S01020C S (µF)304025205101550V pin 1V GE/分销商库存信息: POWEREXM57962CL-01。
BL-BYG204中文资料
DUAL-CHIP & TRI-STATE LED LAMPSChipAbsolute MaximumRatings Electro-opticalData (At 20mA)Vf (V) Iv (mcd) PackagePart No.Material/EmittedColor Peak Wave Length λp (nm) Lens Appearance∆λ (nm) Pd (mw) If (mA) Peak (mA) Typ Max Typ. ViewingAngle 2θ 1/2 (deg) DrawingNo. GaP/GaP/Bright Red 700 90 40 15 50 2.2 2.6 7.0 BL-BHG201 GaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 35.0 GaAsP/GaP/Hi-Eff Red 635 45 80 30 150 2.0 2.6 35.0BL-BEG201GaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 35.0 GaAsP/GaP/Yellow 585 35 80 30 150 2.1 2.6 30.0 T-1 Standard1.0″ Lead 3 φBL-BYG201 GaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 35.0 40 L-070GaP/GaP/Bright Red 700 90 40 15 50 2.2 2.6 8.0 BL-BHG204GaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 45.0 GaAsP/GaP/Hi-Eff Red 635 45 80 30 150 2.0 2.6 45.0BL-BEG204GaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 45.0 GaAsP/GaP/Yellow 585 35 80 30 150 2.1 2.6 40.0 T-13/4 Standard1.0″ Lead 5 φBL-BYG204 GaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 45.0 50 L-071GaP/GaP/Bright Red 700 90 40 15 50 2.2 2.6 3.5 BL-BHG204-AGaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 20.0 GaAsP/GaP/Hi-Eff Red 635 45 80 30 150 2.0 2.6 20.0BL-BEG204-AGaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 20.0 GaAsP/GaP/Yellow 585 35 80 30 150 2.1 2.6 18.0 T-13/4 Standard1.0″ Lead 5 φBL-BYG204-A GaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 20.0 50 L-072GaP/GaP/Bright Red 700 90 40 15 50 2.2 2.6 3.5 BL-BHG204-B GaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 20.0 GaAsP/GaP/Hi-Eff Red 635 45 80 30 150 2.0 2.6 20.0BL-BEG204-B GaP/GaP/Yellow Green 568 White Diffused 30 80 30 150 2.2 2.6 20.0 GaAsP/GaP/Yellow 585 35 80 30 150 2.1 2.6 18.0 T-13/4-Standard 1.0″ Lead 5 φBL-BYG204-BGaP/GaP/Yellow Green568White Diffused3080301502.2 2.6 20.050 L-073Remark: 1. Hi-Eff Red/High-Efficiency Red. 2. Trans/Transparent.3. 2θ 1/2 The off-axis angle at which the luminous intensity is half the axial luminous intensity. Notes: 1. All Dimensions are in millimeters (inches). 2. Tolerance is ±0.25mm (.010″)元器件交易网。
ZLLS410TA;中文规格书,Datasheet资料
10V LOW LEAKAGE SCHOTTKY DIODE IN SOD323Product Summary• VR > 10V • IF = 750mA • IR = 1µADescription and ApplicationsThis compact SOD323 packaged Schottky diode offers users anexcellent performance combination comprising high current operation, extremely low leakage and low forward voltage ensuring suitability for applications requiring efficient operation at higher temperatures (above 85°C) see Operational efficiency chart on page 4.• Low power DC-DC conversion • Level shifting • Reverse blockingFeatures and Benefits• Extremely low leakage • High current capability • Low V F , fast switching Schottky • SOD323 package • Package thermally rated to 150°C • Lead, Halogen, and Antimony Free/RoHS Compliant (Note 1) • “Green” Device (Note 2)Mechanical Data• Case: SOD323• Case material: Molded Plastic. “Green” Molding Compound. • UL Flammability Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish • Weight: 0.0049 grams (Approximate)Ordering Information (Note 3)Device Packaging ShippingZLLS410TA SOD323 3,000/Tape & Reel ZLLS410TCSOD323 10,000/Tape & ReelNotes: 1. No purposefully added lead. Halogen and Antimony Free.2. Diodes Inc’s “Green” Policy can be found on our website at 3. For Packaging Details, go to our website at .Marking InformationSOD323Device symbolTop View Pin Configuration41 = Product Type Marking CodeMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristic Symbol Value UnitContinuous Reverse Voltage V R10 V Continuous Forward Current I F750 mA Peak Repetitive Forward CurrentRectangular Pulse Duty Cycle I FPK1.35 A Non Repetitive Forward Current t ≤ 100μs t ≤ 10ms I FSM17 4 AAThermal CharacteristicsCharacteristic Symbol Value UnitPower Dissipation, T A = 25°CSingle Die Continuous (Note 4)Single Die Measured at t < 5 secs (Note 5)P D 0.33 0.39 W W Junction to Ambient (Note 4) R θJA379 °C/W Junction to Ambient (Note 5) R θJA317 °C/W Storage Temperature Range T STG-55 to +150 °C Notes:4. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.5. For a device surface mounted on FRB PCB measured at t < 5secs.0204060801001201401600.00.10.20.30.4Derating CurveTemperature (°C)M a x P o w e r D i s s i p a t i o n (W )Transient Thermal ImpedanceT h e r m a l R e s i s t a n c e (°C /W )Pulse Width (s)Electrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristic Symbol Min Typ Max Unit TestConditionReverse Breakdown Voltage V (BR)R 10 − − V I R = 200µAForward Voltage (Note 6) V F− − − 285 350 500 300 380 580 mVmV mV I F = 10mA I F = 100mA I F = 1AReverse Current I R − −− − 0.5 0.7 1 − 45 6 200 μA μA μA μA V R = 5V V R = 8V V R = 10VV R = 8V, T A = 85°CDiode Capacitance C D− 37 − pF f = 1MHz, V R = 10V Reverse Recovery Time Reverse Recovery Charge t rr Q rr− − 3 210 − − ns pC Switched from I F = 500mA to V R = 5.5VMeasured @ I R = 50mA.di/dt = 500mA/ns, R source = 6Ω; R load = 10ΩNotes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle < 2%Operational efficiency chartThe operational efficiency chart indicates the beneficial use of the ZLLS series diodes in applications requiring higher voltage, higher temperature operation. Circuits requiring low voltage low temperature operation will benefit from using Zetex low V F ZHCS series diodes.Package Outline DimensionsSuggested Pad LayoutSOD323Dim Min MaxA 0.25 0.35B 1.20 1.40C 2.30 2.70H 1.60 1.80J 0.00 0.10K 1.0 1.1L 0.20 0.40M 0.10 0.15α 0° 8°All Dimensions in mm Dimensions Value (in mm)Z 3.75G 1.05X 0.65Y 1.35C2.40IMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2012, Diodes Incorporated分销商库存信息: DIODESZLLS410TA。
EGP10G;中文规格书,Datasheet资料
EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency Rectifiers July 2007EGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency RectifiersTypical Performance CharacteristicsEGP10A - EGP10K 1.0 Ampere Glass Passivated High Efficiency RectifiersReverse Recovery Time Characterstic and Test Circuit DiagramTRADEMARKSThe following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body, or(b) support or sustain life, and (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to resultin significant injury to the user.2. A critical component is any component of a life supportdevice or system whose failure to perform can be reasonablyexpected to cause the failure of the life support device orsystem, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsACEx®Build it Now™CorePLUS™CROSSVOLT™CTL™Current Transfer Logic™EcoSPARK®Fairchild®Fairchild Semiconductor®FACT Quiet Series™FACT®FAST®FastvCore™FPS™FRFET®Global Power Resource SMGreen FPS™Green FPS™ e-Series™GTO™i-Lo™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™Motion-SPM™OPTOLOGIC®OPTOPLANAR®®PDP-SPM™Power220®Power247®POWEREDGE®Power-SPM™PowerTrench®Programmable Active Droop™QFET®QS™QT Optoelectronics™Quiet Series™RapidConfigure™SMART START™SPM®STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™The Power Franchise®TinyBoost™TinyBuck™TinyLogic®TINYOPTO™TinyPower™TinyPWM™TinyWire™µSerDes™UHC®UniFET™VCX™Datasheet Identification Product Status DefinitionAdvance Information Formative or In DesignThis datasheet contains the design specifications for product development.Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data; supplementary data will be pub-lished at a later date. Fairchild Semiconductor reserves the right to makechanges at any time without notice to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reservesthe right to make changes at any time without notice to improve design. Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontin-ued by Fairchild semiconductor. The datasheet is printed for reference infor-mation only.Rev. I30分销商库存信息: FAIRCHILDEGP10G。
BARO-DO-MIL;中文规格书,Datasheet资料
Error Code Table (Asynchronous mode) Bit 0 : Part not compensated Bit 1 : Tdex Overflow Bit 2 : Tdex Over-range Bit 3 : Pdex Overflow Bit 4 : Pdex Over-range Bit 5 : PWL Overflow Bit 6 : Scaling Overflow Bit 7 : High resolution overflow Bit 8 : Pressure Output Limited to Specified Value Bit 9 through Bit 15 : Reserved
Applications
• Medical Instrumentation • Environmental Controls • Meteorology
The Digital Output pressure sensors are based upon a proprietary surface mapping technology to produce a fully digital output that virtually eliminates all repeatable errors over temperature and pressure. This series provides a 12 bit digital serial output (14 bit in High Resolution Mode) with superior offset, span and linearity characteristics. The output is SPI and MICROWIRE/PLUS® compatible as well as fully compatible with the All Sensors GA142 Series sensors. In addition to synchronous communications, the Digital Output pressure sensors incorporates a bi-directional, TTL level, asynchronous serial interfaces mode (hardware selectable 9,600 or 19,200 baud). This mode includes a command set that allows the host to interrogate the sensor for model information, pressure range, serial number, pressure units and conversion factor. The command set also allows the host to select a high resolution output mode, make minor adjustments to offset and has an addressable feature that alows multiple sensors to be tied to the same interface buss. This series is intended for use with non-corrosive, non-ionic working fluids such as air, dry gases and the like. All signals are 5V TTL/CMOS compatible.
12864中文字库说明书ST7920
12864C-1液晶中文显示模块(一)概述 (3)(一)(二)外形尺寸1 方框图 (3)2 外型尺寸图 (4)(二)(三)模块的接口 (4)(三)(四)硬件说明 (5)(五) 指令说明 (7)(四)(五)读写操作时序 (8)(五)(六)交流参数 (11)(六)(七)软件初始化过程 (12)(七)(八)应用举例 (13)(八)(九)附录1半宽字符表 (20)2 汉字字符表 (21)一、概述12864C-1是一种具有4位/8位并行、2线或3线串行多种接口方式，内部含有国标一级、二级简体中文字库的点阵图形液晶显示模块；其显示分辨率为128×64, 内置8192个16*16点汉字，和128个16*8点ASCII字符集.利用该模块灵活的接口方式和简单、方便的操作指令，可构成全中文人机交互图形界面。
可以显示8×4行16×16点阵的汉字. 也可完成图形显示.低电压低功耗是其又一显著特点。
由该模块构成的液晶显示方案与同类型的图形点阵液晶显示模块相比，不论硬件电路结构或显示程序都要简洁得多，且该模块的价格也略低于相同点阵的图形液晶模块。
基本特性:●●低电源电压（VDD:+3.0--+5.5V）●●显示分辨率:128×64点●●内置汉字字库，提供8192个16×16点阵汉字(简繁体可选)●●内置 128个16×8点阵字符●●2MHZ时钟频率●●显示方式：STN、半透、正显●●驱动方式：1/32DUTY，1/5BIAS●●视角方向：6点●●背光方式：侧部高亮白色LED，功耗仅为普通LED的1/5—1/10●●通讯方式：串行、并口可选●●内置DC-DC转换电路，无需外加负压●●无需片选信号，简化软件设计●●工作温度: 0℃ - +55℃ ,存储温度: -20℃ - +60℃二、方框图3、外形尺寸图三、模块接口说明*注释1：如在实际应用中仅使用串口通讯模式，可将PSB接固定低电平，也可以将模块上的J8和“GND”用焊锡短接。