C3D08065A碳化硅肖特基二极管

250
200 150
100 50
0
1
10
100
1000
VR Reverse Voltage (V)
Figure 4. Capacitance vs. Reverse Voltage
Zth (°C/W)
1.0E+01
1.0E+00 1.0E-01
1.0E-02
1.0E-03 1.E-07
1.E-06
1.E-05
VR RVeRvReervseerseVVoolttaagge e(V)(V)
Figure 1. Forward Characteristics
Figure 2. Reverse Characteristics
2
C3D08065A Rev. -
Typical Performance
60
F(PEAK) I Peak Forward Current (A)
Note: Tj = Diode Junction Temperature In Degrees Celcius
VT
RT
“The levels of environmentally sensitive, persistent biologically toxic (PBT), persistent organic pollutants (POP), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2002/95/EC on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS), as amended through April 21, 2006.
5°3°
Y .395 .410 10.033 10.414
Y
.385
.410
9.779
Z .130
.150 3.302 3.810
z
.130
.150
3.302
5.5° 10.414 3.810
NOTE: 1. Dimension L, M, W apply for Solder Dip
Finish
5
VR = 650 V, IF = 8A di/dt = 500 A/μs TJ = 25°C
VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz
Note
Thermal Characteristics
Symbol Parameter
RθJC
Thermal Resistance from Junction to Case
Typ. 1.5
Unit °C/W
Typical Performance
IF Forward Current (A)
10
TJ = 25°C 9
TJ = 75°C
8
TJ = 125°C
57 36
80 60
220
100 43
-55 to +175
1 8.8
A
TC=25˚C, tP = 10 ms, Half Sine Wave, D=0.3 TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3
A
TC=25˚C, tp = 10 mS, Half Sine Wave, D=0.3 TC=110˚C, tP=10 ms, Half Sine Wave, D=0.3
6°
TS
3° 3° 5° 6°3°
T
3°
5°
3°
UU
3° 3° 5°
6°3°
5°3° 5° 5°3°
V V .100.094 .110 .121.504 2.729.4388
6° 6° 2.794
WW .014.014 .021 .0.23556 .53.3356
.635
XX
3° 3° 5° 5.53°°
Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Average Forward Current
650
V
650
V
650
VBaidu Nhomakorabea
8
A TC=150˚C, DC
IFRM IFSM IFSM Ptot TJ , Tstg
C3D08065A Rev. -
Recommended Solder Pad Layout
TO-220-2
Part Number C3D08065A
Package TO-220-2
Marking C3D08065
Diode Model
Diode Model CSD10060
V fVTfT==VTV+T+IfI*fR*TRT VRRVTTTT====00..000952..209+53+(8+T(T+j(j*T(*JT-*10J*..3-25995**..131700**--3311))00--44))
PIN 1 PIN 2
CASE
Applications
• Switch Mode Power Supplies • Power Factor Correction
•
- Typical PFC Pout : 800W-1600W Motor Drives
- Typical Power : 3HP-4HP
5050
4040
TJ = 25°C
TJ = 75°C
3030
TJ = 125°C
2020
TJ = 175°C
1010
00 00 110000 202000 303000 404000 550000 660000 770000 808000 909000 10100000
39
pF
33
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
IF = 8 A TJ=25°C IF = 8 A TJ=175°C
VR = 650 V TJ=25°C VR = 650 V TJ=175°C
50
20% Duty*
40
30% Duty*
50% Duty*
70% Duty*
30
DC
20
10
0 25
50
75
100
125
TC Case Temperature (°C)
* Frequency > 1KHz
150
175
Figure 3. Current Derating
C Capacitance (pF)
15.621
X
F C .102.143 .112 .125.5391 2.834.6532
3.886
G D .3317.105.337 1.81.45760 8.2586.0067
29.134
E .590 .610 14.986 15.494
Y
HF
.149.500 .153 .535.7085 3.1828.6700
11110.00 1100.00 990.00 880.00 770.00 660.00 550.00 440.00 330.00 220.00 110.00
0.00 2255
5500
7755
110000
112255
115500 117755
Tc Case Temperature (°C) TTCCCCaasseeTTeemmppeerraattuurree((°°CC))
A TC=25˚C, tP = 10 µs, Pulse
W
TC=25˚C TC=110˚C
˚C
Nm M3 Screw lbf-in 6-32 Screw
Note
Subject to change without notice. www.cree.com
1
Electrical Characteristics
TJ = 175°C
7
6
5 4 3
2 1
0
0.0
0.5
1.0
1.5
2.0
2.5
VF Forward Voltage (V)
II R R
Reverse Current (μA)
Reverse Current (uA)
Reverse Characteristics
101000
9090
8080
7070
6060
Figure 6. Power Derating
4
C3D08065A Rev. -
Package Dimensions
Package TO-220-2
A
J
C B
D
E
12
G
Z
H
L
M
N
PIN 1 PIN 2
F
P Q
S
T
U
V W
CASE
POS
Inches
Min
Max
Millimeters
Min
Max
A
.381
Part Number C3D08065A
Package TO-220-2
Marking C3D08065
Datasheet: C3D08065A Rev. -
Maximum Ratings
Symbol
Parameter
Value Unit
Test Conditions
VRRM VRSM VDC
IF(AVG)
C3D08065A–Silicon Carbide Schottky Diode Z-Rec™ Rectifier
Features
Package
VRRM = 650 V IF(AVG) = 8 A Qc = 21 nC
• 650-Volt Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits
Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation Operating Junction and Storage Temperature TO-220 Mounting Torque
1.E-04
1.E-03
Tim e (s)
1.E-02
1.E-01
1.E+00
Figure 5. Transient Thermal Impedance
3
C3D08065A Rev. -
Typical Performance
PPPooowwweeerrrDiDDiisssssisiipppaataittiiooonnn( ((W)WW))
.410
9.677
10.414
B
.235
.255
5.969
6.477
CP OS DA
I.n1c0h0es M in M ax .395.223 .410
.12M0illim eter2s.540 M in M ax
.1303.0733 10.54.16464
3.048 8.560
E B .235.590 .255 .651.9569 6.1447.7986
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF
Forward Voltage
IR
Reverse Current
1.6
1.8
1.9
2.4
V
12 24
60 220
μA
QC
Total Capacitive Charge
21
nC
C
Total Capacitance
441
M .045 .055 1.143 1.397
P N .195.165 .205 .148.9553 5.240.7191
1.397 5.207 4.699
Q P .170.048 .180 .045.3418 4.517.2219
1.372
S Q .048 3° .054 61.°219 1.3731°
TO-220-2
• Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • Higher Efficiency • Reduction of Heat Sink Requirements • Parallel Devices Without Thermal Runaway
13.970
J G 1.127 R1.104.7197 28.626 29.134 R 0.197
L H .530.025 .550 .1033.4662 13.9.76035
.914
MJ
R.004.0510
.055R 0.254 1.143
L .028 .036
.711
.914
N
.195
.205
4.953