SI4750DY-E3中文资料

Smart Power High-Side Switch PRODUCT SUMMARYOvervoltage ProtectionV bb(AZ) (V)Operating VoltageV bb(on) (V)On-State ResistanceR ON (m W)Nominal Load CurrentI L(nom)(A)41 5 − 1550 2.0FEATURESD Overload ProtectionD Current LimitationD Short Circuit ProtectionD Thermal Shutdown with RestartD Overvoltage Protection (Including Load Dump)D Reverse Battery Protection with External Resistor D CMOS Compatible Input D Start A Cold Filament LampD ESD ProtectionD Low Standby CurrentAPPLICATIONSD All Types of Resistive, Inductive and Capacitive Loads D m C Compatible Power Switch for 12-V dc Applications D Replaces Electromechanical Relays and DiscreteCircuitsDESCRIPTIONThe Si4750DY is an n-channel verticle power FET with charge pump, ground referenced CMOS compatible input, and fully protected by embedded protection functions.FUNCTIONAL BLOCK DIAGRAMV BATV STINSO-8Top ViewOrdering Information:Si4750DY—E3Si4750DY-T1—E3 (with Tape and Reel)PIN CONFIGURATIONTRUTH TABLE INMOSFETH ON LOFFPIN DESCRIPTIONPin NumberSymbolDescription1IN Input Logic Signal2, 3, 4V BAT V BAT /MOSFET Drain, Bypass Cap is Mandatory 5, 6S MOSFET Source 7GND Ground8V STStatus Output PinABSOLUTE MAXIMUM RATINGS (T A = 25_C UNLESS OTHERWISE NOTED)ParameterSymbolLimitUnitSupply VoltageV bb 15Supply Voltage For Full Short Circuit Protection (T A = −40 to 150_C)V bb(SC)15VContinuous Input VoltageV IN −0.7 to 7.5Load Current (Short Circuit Current—see page 3)I L Self-Limit A Current Through Input Pin (dc)I IN "1mA Operating Temperature T A −40 to 150Storage Temperature T stg −55 to 150_C Power Dissipation aP tot 1.14W Inductive Load Switch-Off Energy Dissipation Single Pluse (T A = 25_C)E AS 20mJ Load Dump Protection b, c (t d = 15 m s, V IN = low or high, V bb = 14.5 V)V LOADDUMP25V Electrostatic Discharge Voltage (Human Body Model)Input Pin "1.2dAll Other PinsV ESD"5kVTHERMAL RESISTANCE RATINGSParameterSymbolMinimum TypicalMaximumUnitJunction-to-Ambient R thJA 88110Junction-to-Case (Drain)aR thJC2936_C/WNotesa.When Mounted on 1” x 1” PCB FR4 Board.b.Not tested, specified by design.c.V LOADDUMP is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839. Supply voltages higher than V bb(AZ) require an externalcurrent limit for the GND pin, e.g. witha 150-W resistor in GND connection. A resistor for the protection of the input is integrated.d.According to ANSI EOS/ESD-S5.1-1983 ESD STM5.1-1998.SPECIFICATIONSParameterSymbolTest ConditionsUnless Otherwise NotedT A = 25_C, V bb =14.5 VMin Typ Max UnitLoad Switching Capabilities and CharacteristicsOn-State Resistance r ON I L = 2 A, V bb = 9 to 14.5 V3450m W Nominal Load Current I L(nom)2A Turn-On- Time to 90% V OUT t ON 70150Turn-Off Time to 10% V OUT t off = 2 A C 60150m sSlew Rate On dV/dt on I L = 2 A, C L = 2 m A 0.22Slew Rate Off−dV/dt on0.08V/m sOperating ParametersOperating VoltageV bb(on)941Undervoltage Shutdown of Charge Pump V bb(under)T A = −40 to 85_C6.78VUndervoltage Restart of Charge Pump V bb(ucp)7.18Standby CurrentI bb(off)T A = −40 to 85_C, V IN = 0 V70Leakage Output Current (Included in I bb(off))I L(off)V IN = 0 V 0.5m A Protection FeaturesL(SC )t m = 500 m s, T A = 25_C 21Initial Peak Short Circuit Current Limit I L(SCp)t m = 500 m s, T A = 25_C19AThermal Overload Trip Temperature T J 150Thermal HysteresisT HYSI L = 2 A12_CReverse BatteryReverse Battery b−V bb 25V Drain-Source Diode Voltage−V ONV OUT > V bb , T J = 150_C600mVInputInput Turn-On Threshold Voltage V IN(T+) 2.33.0Input Turn-Off Threshold Voltage V IN(T −)See Figure 10.8VInput Threshold Hysteresis D V IN(T)1Off-State Input Current I IN(off)V IN = 0.7 V, See Figure 12On-State Input Current I IN(on)V IN = 5 V, See Figure 12m A Input ResistanceR LInput Resistance, See Figure 13000k WNotesa.Not to exceed T PULSE = 50 ns.b.Requires a 150-W resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Pow-er dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation. Input current has to be limited. (See Maximum Ratings, page 2.)/TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)050100150200250300350012345678−50−250255075100125150Normalized r DS(on) vs. TemperatureN o r m a l i z e d r D S (o n ) (Ω)3034384246504.55.56.57.58.59.510.5r DS(on) vs. V GS @ 25_CV GS (V)r D S (o n ) − D r a i n -S o u r c e O n -R e s i s t a n c e (M W )Typical Input CurrentV D − Analog Voltage (V)0.00.51.01.52.02.53.0−50−25255075100Typical Input Threshold VoltageT A (_C)V I N (t h )0510152025−50−250255075100Initial Peak Current Limit Under A 2-A Lamp Load20406080100120−50−250255075100Typical Standby CurrentTemperature (_C)I I N (m A )I b b (o f f ) (m A )I L (A )TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)0501001502002500.00.51.01.52.02.53.03.51002003004005006007000204060801000.00.5 1.0 1.5 2.0 2.5 3.0 3.5Maximum Allowable Load InductanceFor A Single Switch OffL (m H )0.00.20.40.60.81.01.2Initial Shutdown Time Under A 2-A Lamp LoadS h u t d o w n T i m e (m S )0306090120150180−50−250255075100050100150200250−50−250255075100Typical Turn-On TimeIL (A)t of f (m s )I L (A)E A S (m J )C L (nF)t o n (m s )t o f f (m s )Typical Turn-Off Time1101001 K 10 K100 K1 MTYPICAL CHARACTERISTICS (25_C UNLESS NOTED)0.00.10.20.30.40.50.60.70.80.9−50−2502550751000.000.050.100.150.200.250.30−50−250255075100Typical Slew Rate OnS l e w R a t e O n (V /m s )T A (_C)Temperature (_C)S l e w R a t e O f f (V /m s )Typical Slew Rate OffSETUPFIGURE 1.FIGURE 2.Inductive and Overvoltage Output ClampR LTIMING DIAGRAMSFIGURE 5.V bb Turn-OnFIGURE 6.Switching A Resistive Load, Turn-on/0ffTime and Slew Rate DefinitionFIGURE 7.Switching A Lamp FIGURE 8.Switching An Inductive LoadFIGURE 9.Turn-On Into Short CircuitDriving A Cold FilamentFIGURE 10.Overtemperature: Reset If T J < TJTTIMING DIAGRAMSFIGURE 11.Undervoltage Restart of Charge PumpV ONbb。