RMWM26001中文资料

Note: 1: Device 100% RF tested as downconverter only. LO drive = +12dBm, RF Pin = -10 dBm, IF = 2.6GHz.
Min 21
Typ 17 – 24.1 4.02 – 4.12 2.552 – 2.602 12 7.5 8.5 2 12 10 8 20 35 8 9
RMWM26001
June 2004
RMWM26001
26 GHz Mixer MMIC
General Description
The RMWM26001 is a 26 GHz Mixer designed for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF Components amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWM26001 is a GaAs MMIC diode mixer utilizing our 0.25µm power PHEMT process. The MMIC can be used as both an Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of mixer applications.
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
-4
-6
-8
-10 21000
21500
22000
22500
23000
23500
24000
24500
25000
25500
26000
26500
RF INPUT FREQUENCY (GHz)
©2004 Fairchild Semiconductor Corporation
RMWM26001 Rev. D
17
17.5
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
23.5
24
24.5
LO FREQUENCY (GHz)
RMWL26001 26 GHz Mixed Typical Return Loss Performance Measurements Include 50Ω Test Fixture
RMWM26001
Typical Characteristics (Continued)
RMWL26001 26 GHz Mixed Typical Return Loss Performance Measurements Include 50Ω Test Fixture
0 -2 LO, IF AND RF PORT RETURN LOSS (dB) -4 RF PORT -6 IF PORT -8 -10 -12 -14 LO PORT -16 -18 -20 16.5
-4
-6
-8
-10 21000
21500
22000
22500
23000
23500
24000
24500
25000
25500
26000
26500
FREQUENCY (GHz)
RMWM26001 26 GHz Mixed On-Wafer UpConverter
0
-2 CONVERSION GAIN (dB)
Features
• 4 mil substrate • Conversion loss 7.5dB (Upconverter) • Conversion loss 8.5dB (Downconverter) • No DC bias required • Chip size 1.95mm x 1.5mm
©2004 Fairchild Semiconductor Corporation
RMWM26001 Rev. D
RMWM26001

Typical Characteristics
RMWM26001 26 GHz Mixed On-Wafer UpConverter
0
-2 CONVERSION GAIN (dB)
Electrical Characteristics (At 25°C), 50 Ω system, LO = +12dBm
Parameter RF Frequency Range LO Frequency Range IF Frequency Range (Up-Conv) IF Frequency Range (Down-Conv) LO Drive Power Up Conversion Loss Down Conversion Loss1 Conversion Loss Variation vs Freq. RF Port Return Loss LO Port Return Loss IF Port Return Loss LO to RF Isolation LO to IF Isolation Infput P1dB at IF Port (Up-Conv) Infput P1dB at RF Port (Down-Conv)
UP-CONVERSION MMIC CHIP DOWN-CONVERSION MMIC CHIP
RF OUT
IF IN
RF IN
IF OUT
GROUND (Back of Chip)
LO IN
GROUND (Back of Chip)
LO IN
Figure 1. Functional Block Diagram
Figure 3. Recommended Assembly Diagram
Recommended Procedure for Operation
The RMWM26001 does not require bias. Apply RF input signal at the appropriate frequency band and input drive level.
0.0 1.5
0.831 0.986 1.141
1.95 1.5
0.323 0.1805 0.0 0.0 Dimensions in mm 1.95
0.3225
0.18 0.0
Figure 2. Chip Layout and Bond Pad Locations (Chip Size is 1.95mm x 1.5mm x 100µm. Back of chip is RF Ground)
Max 26.5 30