IRG4PC60FPBF;中文规格书,Datasheet资料

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DPG60C400HB;中文规格书,Datasheet资料

HiPerFRED²Features / Advantages:Applications:Package:Part numberV I RRM ==40030DPG 60 C 400 HBV A 2x Backside: cathodet rr =45nsHigh Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode● Planar passivated chips● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values● Very soft recovery behaviour● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces:- Power dissipation within the diode- Turn-on loss in the commutating switch● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode● Free wheeling diode● Rectifiers in switch mode power supplies (SMPS)● Uninterruptible power supplies (UPS)FAVI RMS A per pin 50R thCH K/W 0.25M D Nm 1.2mounting torque 0.8T stg °C 150storage temperature-55Weight g 6Symbol DefinitionRatingstyp.max.min.Conditions RMS currentthermal resistance case to heatsink Unit I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside.F CN120mounting force with clip20Ordering Delivering ModeBase Qty Code KeyStandard Part Name DPG 60 C 400 HB 505825Tube 30D P G 60C 400 HBPart numberDiodeHiPerFRED extreme fastCommon CathodeT O-247AD (3) ===DPG60C400QB DPG80C400HB TO-3P (3)TO-247AD (3)Similar PartPackage1)1)Marking on Product DPG60C400HB 400400Voltage ClassCurrent Rating [A]Reverse Voltage [V]====RMS分销商库存信息: IXYSDPG60C400HB。

IRGP4086PBF;中文规格书,Datasheet资料

TJ = 25°C
tf
Fall time
td(on)
Turn-On delay time
tr
Rise time
— 65 —
— 30 —
IC = 25A, VCC = 196V
— 33 — ns RG = 10Ω, L=200μH, LS= 200nH
td(off) tf tst
EPULSE
Turn-Off delay time Fall time Shoot Through Blocking Time
2
/

240
VGE = 18V
200
VGE = 15V
VGE = 12V
160
VGE = 10V VGE = 8.0V
120
VGE = 6.0V
ICE (A)
80
40
0
0
4
8
12
16
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
––– 29 ––– ––– 65 ––– ––– 22 ––– — 36 — — 31 — — 112 —
S VCE = 25V, ICE = 25A nC VCE = 200V, IC = 25A, VGE = 15Ve
IC = 25A, VCC = 196V ns RG = 10Ω, L=200μH, LS= 200nH
Parameter Thermal Resistance Junction-to-Case-(each IGBT) d Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) d Weight

IRLML0040TRPBF;中文规格书,Datasheet资料

100 D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.01
0.001 1E-006
1E-005
Fig 4. Normalized On-Resistance Vs. Temperature 3
ID, Drain-to-Source Current (A)
/
IRLML0040TRPbF
C, Capacitance (pF)
10000 1000 100
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd
IRLML0040TRPbF
ID, Drain Current (A)
4.2
3.6
3
2.4
1.8
1.2
0.6
0 25
50
75
100 125 150
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
4
1
1msec
0.1 TA = 25°C Tj = 150°C Single Pulse
10msec
0.01
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area

/
PD @TA = 25°C
Maximum Power Dissipation

IRG4BC30KD-STRR;中文规格书,Datasheet资料

ParameterTyp.Max.UnitsR θJC Junction-to-Case - IGBT ––– 1.2R θJC Junction-to-Case - Diode2.5R θCS Case-to-Sink, Flat, Greased Surface0.5–––°C/W R θJA Junction-to-Ambient ( PCB Mounted,steady-state)U –––40WtWeight1.44–––gParameterMax.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 28I C @ T C = 100°C Continuous Collector Current 16I CM Pulsed Collector Current Q58AI LMClamped Inductive Load Current R 58I F @ T C = 100°C Diode Continuous Forward Current 12I FM Diode Maximum Forward Current 58t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 100P D @ T C = 100°C Maximum Power Dissipation 42T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)IRG4BC30KD-SINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEFeaturesV CES = 600VV CE(on) typ. = 2.21V@V GE = 15V, I C = 16AShort Circuit RatedUltraFast IGBT4/24/2000• High short circuit rating optimized for motor control, t sc =10µs, @360V V CE (start), T J = 125°C, V GE = 15V• Combines low conduction losses with high switching speed• tighter parameter distribution and higher efficiency than previous generations• IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodesBenefits• Latest generation 4 IGBTs offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses • This part replaces the IRGBC30KD2-S and IRGBC30MD2-S products• For hints see design tip 97003PD -91594CAbsolute Maximum RatingsW2D P a kThermal Resistance 1IRG4BC30KD-SParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—67100I C = 16A Q ge Gate - Emitter Charge (turn-on)—1116nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—2537V GE = 15V t d(on)Turn-On Delay Time —60—t r Rise Time —42—T J = 25°Ct d(off)Turn-Off Delay Time —160250I C = 16A, V CC = 480V t f Fall Time —80120V GE = 15V, R G = 23ΩE on Turn-On Switching Loss —0.60—Energy losses include "tail"E off Turn-Off Switching Loss —0.58—mJ and diode reverse recovery E ts Total Switching Loss — 1.18 1.6See Fig. 9,10,14t sc Short Circuit Withstand Time 10——µs V CC = 360V, T J = 125°CV GE = 15V, R G = 10Ω , V CPK < 500Vt d(on)Turn-On Delay Time —58—T J = 150°C,See Fig. 11,14t rRise Time—42—I C = 16A, V CC = 480Vt d(off)Turn-Off Delay Time —210—V GE = 15V, R G = 23Ωt f Fall Time—160—Energy losses include "tail"E ts Total Switching Loss— 1.69—mJ and diode reverse recovery L E Internal Emitter Inductance —7.5—nH Measured 5mm from package C ies Input Capacitance —920—V GE = 0V C oes Output Capacitance—110—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —27—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —4260T J = 25°C See Fig.—80120T J = 125°C 14 I F = 12A I rr Diode Peak Reverse Recovery Current — 3.5 6.0T J = 25°C See Fig.— 5.610T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —80180T J = 25°C See Fig.—220600T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery —180—T J = 25°C See Fig.During t b—160—T J = 125°C 17Parameter Min.Typ.Max.Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage S 600——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.54—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 2.21 2.7I C = 16A V GE = 15V— 2.88—I C = 28ASee Fig. 2, 5— 2.36—I C = 16A, T J = 150°CV GE(th)Gate Threshold Voltage 3.0— 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage —-12—mV/°C V CE = V GE , I C = 250µAg feForward Transconductance T 5.48.1—S V CE = 100V, I C = 16A I CES Zero Gate Voltage Collector Current ——250V GE = 0V, V CE = 600V——2500V GE = 0V, V CE = 600V, T J = 150°CV FM Diode Forward Voltage Drop — 1.4 1.7I C = 12A See Fig. 13— 1.3 1.6I C = 12A, T J = 150°CI GES Gate-to-Emitter Leakage Current ——±100nA V GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsVµAV nCA/µsAnsIRG4BC30KD-S 3Fig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC30KD-SFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC30KD-S 5Resistance Junction TemperatureFig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward CurrentCollector-to-Emitter Current1101000.40.81.21.62.02.4FMF I n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A )Fo rwa rd Voltage Drop - V (V)IRG4BC30KD-S 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt2004006001001000fdi /dt - (A/µs)R R Q - (n C )101001000100001001000f d i /d t - (A /µs)d i (re c )M /d t- (A /µs )40801201601001000fdi /dt - (A/µs)t - (n s )rr 1101001001000fdi /dt - (A/µs)I - (A )I R R MIRG4BC30KD-SFig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrts on offE = (E +E )IRG4BC30KD-S 9Vg G ATE SIG N ALD EVICE UN DER TESTC UR R EN T D.U.T.VO LTAG E IN D.U.T.C UR R EN T IND 1t2Figure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector CurrentTest Circuit=480V4 X I C@25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitTape & Reel InformationD 2PakIRG4BC30KD-SNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 23Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.U When mounted on 1" square PCB (FR-4 or G-10 Material ).For recommended footprint and soldering techniques refer to application note #AN-994.10.16 (.400) R E F.6.47 (.255)6.18 (.243)2.61 (.103)2.32 (.091)8.89 (.350) R E F.- B -1.32 (.052)1.22 (.048)2.79 (.110)2.29 (.090)1.39 (.055)1.14 (.045)5.28 (.208)4.78 (.188)4.69 (.185)4.20 (.165)10.54 (.415)10.29 (.405)- A -21 315.49 (.610)14.73 (.580)3X0.93 (.037)0.69 (.027)5.08 (.200)3X1.40 (.055)1.14 (.045)1.78 (.070)1.27 (.050)1.40 (.055) M A X.N O T E S :1 D IM E N S IO N S A F TE R S O LD E R D IP.2 D IM E N S IO N IN G &TO L E R A N C IN G P E R A N S I Y 14.5M , 1982.3 C O N T R O L LIN G D IM E N S IO N : IN C H.4 H E A TS IN K &L E A D D IM E N S IO N S D O N O T IN C LU D E B U R R S.0.55 (.022)0.46 (.018)0.25 (.010) M B A MM IN IM U M R E C O M M E N D E D F O O T P R IN T11.43 (.450)8.89 (.350)17.78 (.700)3.81 (.150)2.08 (.082) 2XLE A D A S S IG N M E N TS 1 - G A T E 2 - D R A IN 3 - S O U R C E2.54 (.100) 2XD 2Pak Package OutlineIR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 10/00分销商库存信息: IRIRG4BC30KD-STRR。

PVG612AS-TPBF;PVG612A;PVG612AS-T;PVG612ASPBF;中文规格书,Datasheet资料

The PVG612A Series Photovoltaic Relay is a sin glepole, normally open solid-state re lay that can replace electromechani cal re lays in many applications. It util izes International Rectifier’s proprietary HEXFET power MOSFET as the output switch, driven by an inte grated circuit photovoltaic gen erator of novel construction. The output switch is con trolled by radiation from a GaAlAs light emit ting diode (LED) which is optically isolated from the photovol taic generator. These units exceed the performance capabilities of electromechanical relays in operating life, sensitivity, stability of on-resistance, miniaturization, insensitivity to magnetic fields and ruggedess. The compact PVG612A is particularly suited for isolated switching of high currents from 12 to 48 Volt AC or DC power sources. Series PVG612A Relays are packaged in a 6-pin, molded DIP package with either thru-hole or surface mount (gull-wing) termi nals. It is avail able in standard plastic ship ping tubes or on tape-and-reel. Please refer to Part Identifica tion in formation opposite.

STS4DNF60L;中文规格书,Datasheet资料

March 2010Doc ID 6121 Rev 91/12STS4DNF60LN-channel 60 V , 0.045 Ω, 4 A, SO-8STripFET™ Power MOSFETFeatures■Standard outline for easy automated surface mount assembly ■Low threshold driveApplication■Switching applicationsDescriptionThis Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.Type V DSS R DS(on)I D STS4DNF60L60V<0.055Ω4ATable 1.Device summaryOrder code Marking Package Packaging STS4DNF60L4DF60LSO-8Tape & reelContents STS4DNF60LContents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112/12Doc ID 6121 Rev 9STS4DNF60L Electrical ratingsDoc ID 6121 Rev 93/121 Electrical ratingsTable 2.Absolute maximum ratingsSymbol ParameterValue Unit V DS Drain-source voltage (V GS = 0)60V V GS Gate- source voltage± 15V I D Drain current (continuous) at T C = 25 °C 4A I D Drain current (continuous) at T C = 100 °C 2.5A I DM (1)1.Pulse width limited by safe operating area Drain current (pulsed)16A P TOT (2)2.P TOT =1.6 W for single operation T otal dissipation at T C = 25 °C 2W E AS (3)3.Starting T J = 25 °C, I D = 4 A, V DD = 30 VSingle pulse avalanche energy 80mJ T jT stgOperating junction temperature Storage temperature- 55 to 150°CTable 3.Thermal dataSymbolParameterValue Unit Rthj-pcb Thermal resistance junction-pcb D.O.(1)1.When mounted on inch² FR-4 board, 2 Oz Cu, t < 10sec, dual operation62.5°C/WElectrical characteristics STS4DNF60L4/12Doc ID 6121 Rev 92 Electrical characteristics(T C = 25 °C unless otherwise specified)Table 4.On /off statesSymbol Parameter Test conditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourcebreakdown voltageI D = 250 µA, V GS = 060V I DSS Zero gate voltagedrain current (V GS = 0)V DS = Max rating V DS = Max rating, T C =125 °C 110µA µA I GSS Gate-body leakage current (V DS = 0)V GS = ± 15 V± 100nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250 µA 11.72.5V R DS(on)Static drain-source on resistance V GS = 10 V , I D = 2 A V GS = 4.5 V , I D = 2 A0.0450.0500.0550.065ΩΩTable 5.DynamicSymbol Parameter Test conditionsMin.Typ.Max.Unit g fs Forwardtransconductance V DS =25 V , I D =2 A-25-S C issC oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 25 V , f = 1 MHz, V GS = 0-103014040-pF pF pF Q g Q gs Q gdT otal gate charge Gate-source charge Gate-drain chargeV DD = 48 V , I D = 4 A,V GS = 4.5 V (see Figure 13)-1544-nC nC nCSTS4DNF60L Electrical characteristicsDoc ID 6121 Rev 95/12Table 6.Switching timesSymbol ParameterTest conditions Min.Typ.Max.Unit t d(on)t r Turn-on delay time Rise timeV DD = 30 V , I D = 2.2 A, R G = 4.7 Ω, V GS = 10 V (see Figure 12)-1528-ns ns t d(off)t fTurn-off delay time Fall time-4510-ns nsTable 7.Source drain diodeSymbol ParameterTest conditionsMin.Typ.Max.Unit I SD I SDM (1)1.Pulse width limited by safe operating area Source-drain currentSource-drain current (pulsed)-416A A V SD (2)2.Pulsed: Pulse duration = 300 µs, duty cycle 1.5%Forward on voltage I SD = 4 A, V GS = 0- 1.2V t rr Q rr I RRMReverse recovery time Reverse recovery charge Reverse recovery currentI SD = 4 A, di/dt = 100 A/µs V DD = 20 V (see Figure 17)-85852ns nC AElectrical characteristics STS4DNF60L6/12Doc ID 6121 Rev 92.1 Electrical characteristics (curves)Figure 2.Safe operating area Figure 3.Thermal impedanceFigure 4.Output characteristics Figure 5.Transfer characteristicsFigure 6.Source-drain diode forwardFigure 7.Static drain-source on resistanceSTS4DNF60L Electrical characteristicsDoc ID 6121 Rev 97/12Figure 8.Gate charge vs gate-source voltage Figure 9.Capacitance variationsFigure 10.Normalized gate threshold voltageFigure 11.Normalized on resistance vsTest circuits STS4DNF60L8/12Doc ID 6121 Rev 93 Test circuitsFigure 12.Switching times test circuit forFigure 13.Gate charge test circuitFigure 14.Test circuit for inductive loadFigure 15.Unclamped Inductive load testFigure 16.Unclamped inductive waveformFigure 17.Switching time waveformSTS4DNF60L Package mechanical data 4 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in different grades ofECOPACK® packages, depending on their level of environmental compliance. ECOPACK®specifications, grade definitions and product status are available at: . ECOPACKis an ST trademark.Doc ID 6121 Rev 99/12Package mechanical data STS4DNF60L10/12Doc ID 6121 Rev 9分销商库存信息: STMSTS4DNF60L。

BPG400真空规管中文手册详解

当皮拉尼计的测量值低于转换阈值（p = 2.4×10-2毫巴）时，热阴极计接通。热阴极加热后即输出测量值。在5.5×10-3至2.0×10-2毫巴的搭接范围内两个计均输出讯号（→见图3）。
50毫米（0.34毫米2导线）100毫米（1.0毫米2导线）用于RS232C工作≤30米
真空真空侧的材料不锈钢，铱，氧化钇，玻璃，
NiFe，NiCr，钨，钼，铜
内容积
DN 25 ISO-KF≤24毫升
DN 40 CF-R≤34毫升
压强，最大2巴（绝对）
环境允许温度
储存-20℃至70℃
工作0℃至50℃
25微安5毫安7.2×10-6毫巴
5毫安25微安3.2×10-5毫巴
除气电流约16毫安/约4.0瓦
（p＜7.2×10-6毫巴）
控制输入讯号0伏/24伏，PLC-值，高动态
时长至多3分，接着自动停止
在除气模式中，IR090保持提供测量值，误差大于正常运行。
输出讯号输出讯号0至10伏
测量范围0.774伏5×10-10毫巴
真空计规管是SKY Smart真空计规管系列的一个组成部分。可
与COMBIVAC IT23或其它测量仪器一起工作。
工作原理在整个测量范围内，热阴极电离复合真空计有连续的测量特性。
它的测量讯号是对数压强输出。
真空计的功能包括BA规热阴极电离测量系统（用于p＜2.0×10-2
毫巴）和皮拉尼测量系统（用于p＞5.5×10-3毫巴）。在2.0×10-2
当供应电压时，在脚2与脚12之间有测量讯号（测量讯号与压强的关系→附录A）。
估计约10分钟的稳定时间。一旦真空计电源on后，不管压强如何，一直让它保持on。
4.1测量原理，测量特性
IR090包含两个单独的测量系统（热阴极B-A计和皮拉尼计）。

夏普元器件集

复合光晶体管
复合光晶体管盒型单光晶体管（已通过除 UL 外的其它安全规格）
<OPIC 输出型 >
封装类型输出类型特点型号（系列） PC4xxJ00000F/PC456L0NIP0F/ PC41xS0NIP0F/PC410L0NIP0F/ PC411L0NIP0F/PC4D10SNIP0F/ PC4D1ASNIP0F PC457S0NIP0F/PC457L0NIP0F PC9xxV0NSZXF/PC956L0NSZ0F/ PC910L0NSZ0F/PC911L0NSZ0F/ PC912L0NSZ0F PC928J00000F/PC929J00000F/ PC942J00000F/PC92xL0NSZ 系列 PC957L0NSZ0F 页码
⅜ ⅜*2 ⅜ ⅜ ⅜*2 ⅜
小扁平型 4脚
50 50 10 ±50 ±50 ±10
2.5 2.5 2.5 2.5 2.5 2.5
80 80 80 80 80 80
20 20 100 20 20 50
1 1 0.5 ±1 ±1 ±0.5
5 5 5 5 5 5
4 4 4 4 4 4
2 2 2 2 2 2
⅜ ⅜❇ ⅜
小扁平型 4脚
10 ±50 ±10
3.75 3.75 3.75
80 80 70
100 20 50
0.5 ±1 ±0.5
5 5 5
4 4 4
2 2 2
100 100 100
2 2 2
复合光晶体管输出
PC355NJ0000F
⅜❇
50
3.75
35
Байду номын сангаас
600
1

IRG4BC20KDSTRLP;IRG4BC20KDSTRRP;IRG4BC20KD-SPBF;中文规格书,Datasheet资料

Parameter Max.UnitsV CESCollector-to-Emitter Voltage 600VI C @ T C = 25°C Continuous Collector Current 16I C @ T C = 100°C Continuous Collector Current 9.0I CM Pulsed Collector Current 32AI LMClamped Inductive Load Current 32I F @ T C = 100°C Diode Continuous Forward Current 7.0I FM Diode Maximum Forward Current 32t sc Short Circuit Withstand Time 10µsV GEGate-to-Emitter Voltage ± 20V P D @ T C = 25°C Maximum Power Dissipation 60P D @ T C = 100°C Maximum Power Dissipation 24T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf in (1.1 N m)IRG4BC20KD-SPbFI NSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFTRECOVERY DIODE FeaturesV CES = 600VV CE(on) typ. = 2.27V@V GE = 15V, I C = 9.0AShort Circuit RatedUltraFast IGBT8/11/04Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, V GE = 15V Generation 4 IGBT design provides tighterparameter distribution and higher efficiency than previous generationIGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurationsIndustry standard D 2Pak package BenefitsLatest generation 4 IGBT's offer highest powerdensity motor controls possible.HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses. This part replaces the IRGBC20KD2-S and IRGBC20MD2-S products.For hints see design tip 97003.PD -95677Absolute Maximum RatingsW 2D PakParameterTyp.Max.UnitsR θJC Junction-to-Case - IGBT 2.1R θJC Junction-to-Case - Diode2.5R θCS Case-to-Sink, Flat, Greased Surface0.5 °C/W R θJA Junction-to-Ambient ( PCB Mounted,steady-state) 40WtWeight1.44gThermal ResistanceLead-FreeIRG4BC20KD-SPbFParameter Min.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on) 3451I C = 9.0A Q ge Gate - Emitter Charge (turn-on) 4.97.4nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on) 1421V GE = 15V t d(on)Turn-On Delay Time 54 t r Rise Time 34 T J = 25°Ct d(off)Turn-Off Delay Time 180270I C = 9.0A, V CC = 480V t f Fall Time 72110V GE = 15V, R G = 50ΩE on Turn-On Switching Loss 0.34 Energy losses include "tail"E off Turn-Off Switching Loss 0.30 mJ and diode reverse recovery E ts Total Switching Loss 0.640.96See Fig. 9,10,14t sc Short Circuit Withstand Time 10 µs V CC = 360V, T J = 125°CV GE = 15V, R G = 50Ω , V CPK < 500Vt d(on)Turn-On Delay Time 51 T J = 150°C,See Fig. 11,14t rRise Time37 I C = 9.0A, V CC = 480Vt d(off)Turn-Off Delay Time 220 V GE = 15V, R G = 50Ωt f Fall Time160 Energy losses include "tail"E ts Total Switching Loss0.85 mJ and diode reverse recovery L E Internal Emitter Inductance 7.5 nH Measured 5mm from package C ies Input Capacitance 450 V GE = 0V C oes Output Capacitance61 pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance 14 = 1.0MHz t rr Diode Reverse Recovery Time 3755ns T J = 25°C See Fig. 5590T J = 125°C 14 I F = 8.0A I rr Diode Peak Reverse Recovery Current 3.5 5.0A T J = 25°C See Fig. 4.58.0T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge 65138nC T J = 25°C See Fig. 124360T J = 125°C 16 di/dt = 200Aµs di (rec)M /dtDiode Peak Rate of Fall of Recovery 240 A/µs T J = 25°C See Fig.During t b210 T J = 125°C 17Parameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage 0.49 V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage 2.27 2.8I C = 9.0A V GE = 15V3.01 V I C = 16ASee Fig. 2, 5 2.43I C = 9.0A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage -10 mV/°CV CE = V GE , I C = 250µA g feForward Transconductance 2.9 4.3 S V CE = 100V, I C = 9.0A I CES Zero Gate Voltage Collector Current 250µAV GE = 0V, V CE = 600V1000V GE = 0V, V CE = 600V, T J = 150°C V FM Diode Forward Voltage Drop 1.4 1.7VI C = 8.0A See Fig. 13 1.3 1.6I C = 8.0A, T J = 150°C I GES Gate-to-Emitter Leakage Current ±100nAV GE = ±20VSwitching Characteristics @ T J = 25°C (unless otherwise specified)Electrical Characteristics @ T J = 25°C (unless otherwise specified)nsnsIRG4BC20KD-SPbFFig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4BC20KD-SPbFFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4BC20KD-SPbFFig. 7 - Typical Capacitance vs.Collector-to-Emitter VoltageFig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 9 - Typical Switching Losses vs. GateResistance Fig. 10 - Typical Switching Losses vs.Junction TemperatureFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current0.11101000.40.8 1.2 1.6 2.0 2.4 2.8 3.2FMFI n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A ) Forward Voltage Drop - V (V)IRG4BC20KD-SPbFFig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt1002003004005001001000fdi /dt - (A/µs)R R Q - (n C )1001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs )204060801001001000fdi /dt - (A/µs)t - (n s )r r1101001001000fdi /dt - (A/µs)I - (A )I R RMIRG4BC20KD-SPbFFig. 18a - Test Circuit for Measurement ofI LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t ft2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off, t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on, t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec, t rr, Q rr, I rrIRG4BC20KD-SPbFNotes:Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20) V CC =80%(V CES ), V GE =20V, L=10µH, R G = 50Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot.When mounted on 1" square PCB (FR-4 or G-10 Material ).For recommended footprint and soldering techniques refer to application note #AN-994.344TRRFEED DIRECTION1.85 (.073)1.65 (.065)1.60 (.063)1.50 (.059)4.10 (.161)3.90 (.153)TRLFEED DIRECTION 10.90 (.429)10.70 (.421)16.10 (.634)15.90 (.626)1.75 (.069)1.25 (.049)11.60 (.457)11.40 (.449)15.42 (.609)15.22 (.601)4.72 (.136)4.52 (.178)24.30 (.957)23.90 (.941)0.368 (.0145)0.342 (.0135)1.60 (.063)1.50 (.059)13.50 (.532)12.80 (.504)330.00(14.173) MAX.27.40 (1.079)23.90 (.941)60.00 (2.362) MIN.30.40 (1.197) MAX.26.40 (1.039)24.40 (.961)NOTES :1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.D 2Pak Tape & Reel InfomationData and specifications subject to change without notice.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .08/04分销商库存信息:IRIRG4BC20KDSTRLP IRG4BC20KDSTRRP IRG4BC20KD-SPBF。

IRG4PC50SDPBF;中文规格书,Datasheet资料

IRG4PC50SDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEV CES = 600VV CE(on) typ. = 1.28V@V GE = 15V, I C = 41AStandard Speed CoPack IGBTFeaturesStandard: Optimized for minimum saturation voltage and low operating frequencies (<1kHz)IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurationsIndustry standard TO-247AC packageBenefitsGeneration -4 IGBT's offer highest efficiencies availableIGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics requireless/no snubbingPD - 97316GC E TO-247ACCIRG4PC50SDPbFNotes:Repetitive rating: V GE=15V; pulse width limited by maximum junction temperature. (See figure 20) V CC=80%(V CES), V GE=15V, R G = 5.0Ω. (See figure 19)Pulse width≤80µs; duty factor≤0.1%.IRG4PC50SDPbFFig. 1 - Typical Load Current vs. Frequency(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4PC50SDPbFFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs.Case TemperatureFig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-CaseIRG4PC50SDPbFFig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageFig. 9 - Typical Switching Losses vs. GateResistance Fig. 10 - Typical Switching Losses vs.Junction TemperatureIRG4PC50SDPbFFig. 11 - Typical Switching Losses vs.Collector-to-Emitter CurrentFig. 12 - Turn-Off SOAFig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current1101000.61.0 1.4 1.82.2 2.6FMFI n s t a n t a n e o u s F o r w a r d C u r r e n t - I (A ) Forward Voltage Drop - V (V)IRG4PC50SDPbFFig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dtFig. 17 - Typical di (rec)M /dt vs. di f /dt300600900120015001001000f di /dt - (A/µs)R R Q - (n C )1001000100001001000fdi /dt - (A/µs)d i (r e c )M /d t - (A /µs )1101001001000fdi /dt - (A/µs)I - (A )I RR M204060801001201401001000fdi /dt - (A/µs)t - (n s )r rIRG4PC50SDPbFt1t2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), tfFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4PC50SDPbFVg GATE SIGNALDEVICE UNDER TESTCURRENT D.U.T.VOLTAGE IN D.U.T.CURRENT IN D1t0t1t2Figure 19. Clamped Inductive Load TestCircuit =480V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a'sTest CircuitFigure 20. Pulsed Collector CurrentTest Circuit233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903 Visit us at for sales contact information. 04/08分销商库存信息: IRIRG4PC50SDPBF。

IRFPC40PBF中文资料

Power MOSFETIRFPC40, SiHFPC40Vishay SiliconixFEATURES•Dynamic dV/dt Rating •Repetitive Avalanche Rated •Isolated Central Mounting Hole •Fast Switching •Ease of Paralleling •Simple Drive Requirements •Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 16 mH, R G = 25 Ω, I AS = 6.8 A (see fig. 12).c.I SD ≤ 6.8 A, dI/dt ≤ 80 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from casePRODUCT SUMMARYV DS (V)600R DS(on) (Ω)V GS = 10 V1.2Q g (Max.) (nC)60Q gs (nC)8.3Q gd (nC)30ConfigurationSingleTO-247GDSORDERING INFORMATIONPackage TO-247Lead (Pb)-free IRFPC40PbF SiHFPC40-E3 SnPbIRFPC40SiHFPC40ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS600VGate-Source Voltage V GS ± 20 Continuous Drain Current V GS at 10 VT C = 25 °C I D6.8A T C = 100 °C4.3Pulsed Drain Current a I DM 27Linear Derating Factor1.2W/°C Single Pulse Avalanche Energy b E AS 410mJ Maximum Power Dissipation T C = 25 °CP D 150WPeak Diode Recovery dV/dt cdV/dt 3.0V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in 1.1N · m * Pb containing terminations are not RoHS compliant, exemptions may apply元器件交易网IRFPC40, SiHFPC40Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSARAMETER SYMBOL TY.MAX.UNIT Maximum Junction-to-Ambient R thJA -40°C/WCase-to-Sink, Flat, Greased Surface R thCS 0.24-Maximum Junction-to-Case (Drain)R thJC-0.83元器件交易网元器件交易网Vishay SiliconixIRFPC40, SiHFPC40 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward Voltage元器件交易网IRFPC40, SiHFPC40Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case元器件交易网IRFPC40, SiHFPC40Vishay SiliconixFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test Circuit元器件交易网IRFPC40, SiHFPC40Vishay SiliconixFig.14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?91240.元器件交易网Disclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。

IXGA48N60C3;IXGP48N60C3;IXGH48N60C3;中文规格书,Datasheet资料

Symbol Test ConditionsMaximum RatingsV CES T C = 25°C to 150°C 600V V CGR T J = 25°C to 150°C, R GE = 1M Ω600V V GES Continuous ± 20 V V GEM Transient ± 30 V I C25T C = 25°C 75A I C110T C = 110°C 48A I CM T C = 25°C, 1ms 250A I A T C = 25°C 30 A E AS T C = 25°C300mJ SSOA V GE = 15V, T VJ = 125°C, R G = 3Ω I CM = 100 A (RBSOA)Clamped Inductive Load V CE ≤ V CES P C T C = 25°C300W T J -55 ... +150°C T JM 150°C T stg -55 ... +150°C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10 Seconds 260°CF C Mounting Force (TO-263 Lead) 10.65 / 2.5..14.6 N/lb.M d Mounting Torque (TO-247&TO-220) 1.13/10 Nm/lb.in.WeightTO-2632.5 g TO-263 Lead2.8 g TO-2203.0 g TO-2476.0gIXGA48N60C3 IXGP48N60C3 IXGH48N60C3CES I C110= 48A V CE(sat)≤ 2.5V t fi(typ)= 38nsHigh-Speed PT IGBTs for 40-100kHz SwitchingFeaturesz Optimized for Low Switching Losses z Square RBSOA z Avalanche Rated z Fast SwitchingzInternational Standard PackagesAdvantagesz High Power DensityzLow Gate Drive RequirementApplicationsz High Frequency Power Inverters z UPSz Motor Drives z SMPSz PFC Circuits z Battery Chargers z Welding Machines zLamp BallastsSymbol Test ConditionsCharacteristic Values(T J = 25°C Unless Otherwise Specified) Min. Typ. Max.BV CES I C = 250μA, V GE = 0V 600VV GE(th) I C = 250μA, V CE = V GE 3.0 5.5 V I CES V CE = V CES , V GE = 0V 25 μAT J = 125°C250 μAI GESV CE = 0V, V GE = ± 20V±100 nAV CE(sat) I C = 30A, V GE = 15V, Note 1 2.3 2.5 VT J = 125°C 1.8 VIXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.IXYS MOSFETs and IGBTs are covered 4,835,5924,931,8445,049,9615,237,4816,162,6656,404,065 B16,683,3446,727,5857,005,734 B2 7,157,338B2by one or more of the following U.S. patents:4,850,0725,017,5085,063,3075,381,0256,259,123 B16,534,3436,710,405 B26,759,6927,063,975 B24,881,1065,034,7965,187,1175,486,7156,306,728 B16,583,5056,710,4636,771,478 B27,071,537Notes:1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.2. Switching times & energy losses may increase for higher V CE (Clamp), T J or R G .G = Gate D = Collector S = Emitter Tab = CollectorTO-247 (IXGH)G E C TO-263 AA (IXGA)G EG C ETO-220AB (IXGP)CGC (Tab)Pins: 1 - Gate 2,4 - Collector3 - Emitter© 2011 IXYS CORPORATION, All Rights ReservedIXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.分销商库存信息:IXYSIXGA48N60C3IXGP48N60C3IXGH48N60C3。

IRG4PH30KD;中文规格书,Datasheet资料

IRG4PH30KDINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEV CES = 1200VV CE(on) typ.= 3.10V@V GE = 15V, I C = 10APD- 91579AShort Circuit RatedUltraFast IGBTParameterMax.UnitsV CESCollector-to-Emitter Voltage 1200VI C @ T C = 25°C Continuous Collector Current 20I C @ T C = 100°C Continuous Collector Current 10I CM Pulsed Collector Current Q40AI LMClamped Inductive Load Current R 40I F @ T C = 100°C Diode Continuous Forward Current 10I FM Diode Maximum Forward Current 40t sc Short Circuit Withstand Time 10µs V GEGate-to-Emitter Voltage± 20V P D @ T C = 25°C Maximum Power Dissipation 100P D @ T C = 100°C Maximum Power Dissipation 42T J Operating Junction and-55 to +150T STGStorage Temperature Range°CSoldering Temperature, for 10 sec.300 (0.063 in. (1.6mm) from case)Mounting Torque, 6-32 or M3 Screw.10 lbf•in (1.1 N•m)Parameter Min.Typ.Max.UnitsR θJC Junction-to-Case - IGBT –––––– 1.2R θJC Junction-to-Case - Diode–––––– 2.5°C/WR θCS Case-to-Sink, flat, greased surface–––0.24–––R θJA Junction-to-Ambient, typical socket mount ––––––40WtWeight–––6 (0.21)–––g (oz)Thermal ResistanceAbsolute Maximum RatingsWFeatures• High short circuit rating optimized for motor control, t sc =10µs, V CC = 720V , T J = 125°C, V GE = 15V• Combines low conduction losses with high switching speed• Tighter parameter distribution and higher efficiency than previous generations• IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes• Latest generation 4 IGBT's offer highest power density motor controls possible• HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses• This part replaces IRGPH30MD2 products • For hints see design tip 97003Benefits2/7/2000 1IRG4PH30KDParameterMin.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on)—5380I C = 10A Q ge Gate - Emitter Charge (turn-on)—9.014nC V CC = 400V See Fig.8Q gc Gate - Collector Charge (turn-on)—2132V GE = 15V t d(on)Turn-On Delay Time —39—t r Rise Time —84—T J = 25°Ct d(off)Turn-Off Delay Time —220340I C = 10A, V CC = 800V t f Fall Time —90140V GE = 15V, R G = 23ΩE on Turn-On Switching Loss —0.95—Energy losses include "tail"E off Turn-Off Switching Loss — 1.15—mJ and diode reverse recovery E ts Total Switching Loss — 2.10 2.6See Fig. 9,10,18t sc Short Circuit Withstand Time 10——µs V CC = 720V, T J = 125°CV GE = 15V, R G = 5.0Ωt d(on)Turn-On Delay Time —42—T J = 150°C, See Fig. 10,11,18t rRise Time—79—I C = 10A, V CC = 800Vt d(off)Turn-Off Delay Time —540—V GE = 15V, R G = 23Ω,t f Fall Time—97—Energy losses include "tail"E ts Total Switching Loss— 3.5—mJ and diode reverse recovery L E Internal Emitter Inductance —13—nH Measured 5mm from package C ies Input Capacitance —800—V GE = 0V C oes Output Capacitance—60—pF V CC = 30V See Fig. 7C res Reverse Transfer Capacitance —14—ƒ = 1.0MHz t rr Diode Reverse Recovery Time —5076ns T J = 25°C See Fig.—72110T J = 125°C 14 I F = 10A I rr Diode Peak Reverse Recovery Current — 4.47.0A T J = 25°C See Fig.— 5.98.8T J = 125°C 15 V R = 200V Q rr Diode Reverse Recovery Charge —130200nC T J = 25°C See Fig.—250380T J = 125°C 16 di/dt = 200A/µs di (rec)M /dtDiode Peak Rate of Fall of Recovery —210—A/µs T J = 25°C See Fig.During t b—180—T J = 125°C 17Switching Characteristics @ T J = 25°C (unless otherwise specified)nsnsParameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage S 1200——V V GE = 0V, I C = 250µA ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage —0.19—V/°C V GE = 0V, I C = 1.0mA V CE(on)Collector-to-Emitter Saturation Voltage — 3.104.2I C = 10A V GE = 15V — 3.90—V I C = 20A See Fig. 2, 5— 3.01—I C = 10A, T J = 150°C V GE(th)Gate Threshold Voltage 3.0—6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage—-12—mV/°C V CE = V GE , I C = 250µA g fe Forward Transconductance T 4.3 6.5—S V CE = 100V, I C = 10A I CES Zero Gate Voltage Collector Current ——250µA V GE = 0V, V CE = 1200V ——3500V GE = 0V, V CE = 1200V, T J = 150°C V FM Diode Forward Voltage Drop — 3.43.8V I C = 10A See Fig. 13— 3.33.7I C = 10A, T J = 150°C I GES Gate-to-Emitter Leakage Current ——±100nA V GE = ±20VElectrical Characteristics @ T J = 25°C (unless otherwise specified)IRG4PH30KD 3(Load Current = I RMS of fundamental)Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer CharacteristicsIRG4PH30KDFig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperatureIRG4PH30KD 5Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter VoltageResistance Junction TemperatureIRG4PH30KDFig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward CurrentCollector Current1101000.02.04.06.08.0FMForward Voltage D rop - V (V)I n s t a n t a n e o u s F o r w a r d C u r r e n t ( A )IRG4PH30KD 7Fig. 14 - Typical Reverse Recovery vs. di f /dtFig. 15 - Typical Recovery Current vs. di f /dtFig. 16 - Typical Stored Charge vs. di f /dt Fig. 17 - Typical di (rec)M /dt vs. di f /dt101001000100001001000fdi /dt - (A/µs)1101001001000fdi /dt - (A/µs)020040060080010001001000fdi /dt - (A/µs)204060801001001000fdi /dt - (A/µs)t r r - ( n s )I I R R M - ( A )d i (re c )M /d t - ( A /µs )Q I R R - ( n C )IRG4PH30KDt2Fig. 18b - Test Waveforms for Circuit of Fig. 18a, DefiningE off , t d(off), t fE NTFig. 18a - Test Circuit for Measurement ofI LM , E on , E off(diode), t rr , Q rr , I rr , t d(on), t r , t d(off), t fFig. 18c - Test Waveforms for Circuit of Fig. 18a,Defining E on , t d(on), t rFig. 18d - Test Waveforms for Circuit of Fig. 18a,Defining E rec , t rr , Q rr , I rrIRG4PH30KD 9V g G A T E S IG NA LDE V ICE U NDE R T E S TCUR RE N T D.U.T.V O LT A G E IN D.U.T.CUR RE N T IN D1t0t1t2Figure 19. Clamped Inductive Load Test CircuitFigure 20. Pulsed Collector CurrentTest Circuit=960V4 X I C @25°CFigure 18e. Macro Waveforms for Figure 18a's Test CircuitIRG4PH30KDD im en sion s in M illim eters a nd (Inches)CONFORM S TO JEDEC OUTLINE TO-247AC (TO-3P)- D - 5.30 (.209)4.70 (.185)3.65 (.143)3.55 (.140) 2.50 (.089)1.50 (.059)43X0.80 (.031)0.40 (.016)2.60 (.102)2.20 (.087)3.40 (.133)3.00 (.118)3X0.25 (.010)MC A S4.30 (.170)3.70 (.145)- C -2X5.50 (.217)4.50 (.177)5.50 (.217)0.25 (.010)1.40 (.056)1.00 (.039)D MMB - A -15.90 (.626)15.30 (.602)- B -12320.30 (.800)19.70 (.775)14.80 (.583)14.20 (.559)2.40 (.094)2.00 (.079)2X 2X5.45 (.215)*N O T E S :1 D IM E N S IO N S & T O LE R A N C IN G P E R A N S I Y 14.5M , 1982.2 C O N T R O L L IN G D IM E N S IO N : IN C H.3 D IM E N S IO N S A R E S H O W N M IL LIM E T E R S (IN C H E S ).4 C O N F O R M S T O JE D E C O U T L IN E T O -247A C.L E A D A S S IG N M E N T S 1 - G A T E2 - C O L L E C T O R3 - E M IT T E R4 - C O L L E C T O R*LO N G E R LE A D E D (20m m )V E R S IO N A V A IL A B L E (T O -247A D )TO O R D E R A D D "-E " S U FFIX T O P A R T N U M B E RCase Outline — TO-247ACNotes:Q Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20)R V CC =80%(V CES ), V GE =20V, L=10µH, R G = 23Ω (figure 19)S Pulse width ≤ 80µs; duty factor ≤ 0.1%.T Pulse width 5.0µs, single shot.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936Data and specifications subject to change without notice. 6/00分销商库存信息: IRIRG4PH30KD。

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60F84资料

41Snap-Action Temperature ControlsThe 60F and 61F line of 3/4” (19mm) bimetal disc temperature limit controls offer reliable “one shot” operation at temperatures up to 350°F (177°C). Utilizing the same bimetal temperature sensing principle as the 60T automatic reset control, the 60F and 61F permit a uniform approach to the application of temperature limits. A wide variety of terminal and mounting configurations are available to give maximum design flexibility. Rated for electrical loads up to 25 amps at600VAC (60F) and 48 amps at 600VAC (61F), these temperature limit controls provide unsurpassed over-temperature protection in a non-resettable design.Features and BenefitsThe 60F/61F series features include:•Single operation for reliable, non-resettable, temperature limiting.•Special Kapton insulator for application voltages up to 600VAC.•Snap-action bimetal disc for high-speed contact separation.•Welded construction for integrity of current-carrying components.• A wide variety of terminal and mounting options for design flexibility.•Available with an exposed or enclosed bimetal disc for either increased thermal response or protection from airborne contaminants.Switch Action and Typical ApplicationsThe 60F and 61F are single pole, single throw (SPST) switches designed to open their electrical contacts on temperature rise. Once the switch has operated, the unique bimetal “fuse” disc prevents reset of the contacts to their original state at temperatures above -31°F (-35°C).The 60F reflects the same 25 Amp contact rating found in the 60T automatic reset series while the 61F provides a higher current-carrying construction for 48 Amp capability. The Therm-O-Disc 60F and 61F are typically utilized as primary or secondary temperature limits in electric heating equipment.Mounting BracketsThe 60F and 61F are available in either flangeless (see figure 1)or flanged (see figure 2)airstream mount configurations. Airstream mounting is typically used in applications where the tempera-ture being sensed is contained within an enclosure such as an air duct or heater box. An optional surface mount configuration is available for applications where the temperature being sensed is the actual mounting surface. Exposed or enclosed bimetal disc mounting versions may be speci-fied with any of the mounting configurations.60F, 61F Series Temperature Controls4260F61FFigure 1Figure 2Dimensions are shown in inches and (millimeters).Terminal ConfigurationsStandard terminations for the 60F are .250” x .032” (6.35mm x .81mm) tin-plated brass blades.The 61F is provided with a 10-32 screw and double .250” x .032” (6.35mm x .81mm) blade combination. Optional configurations, which include fork, screw and double blade terminations,are available at additional cost.General Electrical RatingsThe 60F, 61F series of controls has been rated by major agencies throughout the world. The agency ratings can be used as a guide when evaluating specific applications. However, themechanical, electrical, thermal and environmental conditions to which a control may be exposed in an application may differ significantly from agency test conditions. Therefore, the user must not rely solely on agency ratings, but must perform adequate testing of the product to confirm that the control selected will operate as intended in the user’s application.NOTE:For complete ratings information, please contact our Sales Engineering Department.At thermostat end-of-life, the contacts may remain permanently closed or open.Thermostat Contact Inductive Pilot duty Resistive Volts ACAgency TypeArrangement Amperes VAAmperesRecognitionFLA LRA 60F SPST ——50025120-600UL/CSA 61F SPST ——100048A 120-600UL/CSA 60F/61FSPST1472——120-240UL0.17 (4.3)3.24(82.3)2.04(51.8)Kapton ShieldØ0.93(23.6)1.10(27.9)0.39(9.9)1.10(27.9)2.00(50.8)1.69(42.9)1.56(39.6)T.O.D.0.20 (5.1)Ø1.06(26.9).81(20.6)1.21(30.7)1.59(40.4)0.66(16.8)1.08(27.4)Ø0.93(23.6)Calibration Temperatures and TolerancesThermostat Opening Temperature TolerancesType80°-200°F (28°-93°C)201°-300°F (94°-149°C)301°-350°F (150°-177°C)60F, 61F±8°(±4.5°C)±10°F (±5.5°C)±12°F (±6.5°C)Part Numbering SystemImportant NoticeUsers must determine the suitability of the control for their application, including the level ofreliability required, and are solely responsible for the function of the end-use product.These controls contain exposed electrical components and are not intended to withstandexposure to water or other environmental contaminants which can compromise insulating components. Such exposure may result in insulation breakdown and accompanying localizedelectrical heating.A control may remain permanently closed or open as a result of exposure to excessive mechanical, electrical, thermal or environmental conditions or at normal end-of-life. If failure of the control tooperate could result in personal injury or property damage, the user should incorporate supplementalsystem control features to achieve the desired level of reliability and safety. For example, backupcontrols have been incorporated in a number of applications for this reason.43。

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ParameterMax.UnitsV CESCollector-to-Emitter Breakdown Voltage 600V I C @ T C = 25°C Continuous Collector Current 90I C @ T C = 100°C Continuous Collector Current 60AI CM Pulsed Collector Current360I LM Clamped Inductive Load Current 360V GE Gate-to-Emitter Voltage± 20V E ARVReverse Voltage Avalanche Energy 200mJ P D @ T C = 25°C Maximum Power Dissipation 520P D @ T C = 100°C Maximum Power Dissipation 210T J Operating Junction and-55 to + 150T STGStorage Temperature RangeSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )°CMounting torque, 6-32 or M3 screw.10 lbf in (1.1N m)IRG4PC60FPbFFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesFast: Optimized for medium operatingfrequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).Generation 4 IGBT design provides tighter parameter distribution and higher efficiency. Industry standard TO-247AC package. Lead-FreeIGBT's optimized for specified application conditions Designed for best performance when used with IR Hexfred & IR Fred companion diodes.Benefits12/04/09ParameterTyp.Max.UnitsR θJC Junction-to-Case0.24R θCS Case-to-Sink, Flat, Greased Surface0.24 °C/W R θJA Junction-to-Ambient, typical socket mount 40WtWeight6 (0.21)g (oz)Thermal ResistanceAbsolute Maximum RatingsW 1PD - 95566AIRG4PC60FPbFParameterMin.Typ.Max.Units Conditions Q g Total Gate Charge (turn-on) 290340I C = 40A Q ge Gate - Emitter Charge (turn-on) 4047nC V CC = 400V See Fig. 8Q gc Gate - Collector Charge (turn-on) 100130V GE = 15V t d(on)Turn-On Delay Time 42 t r Rise Time66 T J = 25°Ct d(off)Turn-Off Delay Time 310360I C = 60A, V CC = 480V t f Fall Time170220V GE = 15V, R G = 5.0ΩE o n Turn-On Switching Loss 0.30 Energy losses include "tail"E off Turn-Off Switching Loss 4.6 mJ See Fig. 10, 11, 13, 14E t s Total Switching Loss 4.96.3t d(on)Turn-On Delay Time 39 T J = 150°C,t r Rise Time66 I C = 60A, V CC = 480Vt d(off)Turn-Off Delay Time 470 V GE = 15V, R G = 5.0Ωt f Fall Time300 Energy losses include "tail"E t s Total Switching Loss8.8 mJ See Fig. 13, 14L E Internal Emitter Inductance 13 nH Measured 5mm from package C ies Input Capacitance 6050 V GE = 0V C oes Output Capacitance360 pF V CC = 30V See Fig. 7C resReverse Transfer Capacitance66 = 1.0MHzParameter Min.Typ.Max.Units ConditionsV (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µAV (BR)ECSEmitter-to-Collector Breakdown Voltage 16 V V GE = 0V, I C = 1.0A ∆V (BR)CES /∆T J Temperature Coeff. of Breakdown Voltage 0.13 V/°C V GE = 0V, I C = 1.0mA1.5 1.8 I C = 60A V GE = 15VV CE(ON)Collector-to-Emitter Saturation Voltage 1.7 I C = 90A See Fig.2, 51.5 I C = 60A , T J = 150°CV GE(th)Gate Threshold Voltage 3.0 6.0V CE = V GE , I C = 250µA ∆V GE(th)/∆T J Temperature Coeff. of Threshold Voltage -11 mV/°C V CE = V GE , I C = 250µA g fe Forward Transconductance 3669 S V CE = 100V, I C = 60A250V GE = 0V, V CE = 600V2.0V GE = 0V, V CE = 10V, T J = 25°C 1000V GE = 0V, V CE = 600V, T J = 150°CI G E S Gate-to-Emitter Leakage Current ±100nA V GE = ±20VElectrical Characteristics @ T J = 25°C (unless otherwise specified)I CES Zero Gate Voltage Collector Current VµASwitching Characteristics @ T J = 25°C (unless otherwise specified)nsnsPulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot.Repetitive rating; V GE = 20V, pulse width limited bymax. junction temperature. ( See fig. 13b )V CC = 80%(V CES ), V GE = 20V, L = TBD µH,R G = 5.0Ω. (See fig. 13a)Repetitive rating; pulse width limited by maximumjunction temperature.Notes:IRG4PC60FPbF3Fig. 1 - Typical Load Current vs. Frequency(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK )Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics0.1110100f , Frequency ( kHz )4080120160L o a d C u r r e n t ( A )0.01.02.03.04.05.0V CE , Collector-to-Emitter Voltage (V)0.010.11101001000I C , C o l l e c t o r t -t o -E m i t t e r C u r r e n t (A )4567891011V GE, Gate-to-Emitter Voltage (V)0.010.11101001000I C , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )IRG4PC60FPbF4Fig. 5 - Typical Collector-to-Emitter Voltagevs. Junction TemperatureFig. 4 - Maximum Collector Current vs. CaseTemperature-60-40-2020406080100120140160T J , Junction Temperature (°C)1.02.03.0V C E , C o l l e c t or -t o E m i t t e r V o l t a g e (V )255075100125150T C , Case Temperature (°C)0102030405060708090100M a x i m u m D C C o l l e c t o r C u r r e n t (A )IRG4PC60FPbF5Fig. 10 - Typical Switching Losses vs.Junction TemperatureFig. 9 - Typical Switching Losses vs. GateResistanceGate-to-Emitter VoltageFig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage1020304050R G , Gate Resistance (Ω)4.005.006.007.008.00T o t a l S w i t c h i n g L o s s e s (m J )-60-40-2020406080100120140160T J , Junction Temperature (°C)110100T o t a l S w i t c h i n g L o s s e s (m J )100200300400500V CE (V)10100100010000100000C a p a c i t a n c e (p F )IRG4PC60FPbFFig. 12 - Turn-Off SOAFig. 11 - Typical Switching Losses vs.Collector-to-Emitter Current30507090110130I C , Collector Current (A)0.010.020.030.0T o t a l S w i t c h i n g L o s s e s (m J)0.11101001000V DS , Drain-to-Source Voltage (V)1101001000I C , C o l l e c t o r -t o -E m i t t e r C u r r e n t (A )IRG4PC60FPbF 7480VX C @* Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.Fig. 13a - Clamped InductiveLoad Test CircuitFig. 13b - Pulsed CollectorCurrent Test Circuit=ts on offE = (E +E )Fig. 14b - Switching LossWaveformsFig. 14a - Switching LossTest Circuit* Driver same type as D.U.T., VC = 480VIR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .12/09分销商库存信息: IRIRG4PC60FPBF。