20IMX4-05-9中文资料
DA204K中文资料
Diodes1/4Switching diodeDA221M / DA221 / DA204U / DA204K DA228U / DA228K / UMR12Nz Applications Bias circuitsProtection circuitsz Features1) Three types of packages are available. (VMD3, EMD3, UMD3, SMD3)2) Two diode elements are connected in series (V F × 2) per circuit.z ConstructionSilicon epitaxial planarz Circuitz External dimensions (Unit : mm)Diodes2/4z MarkingUMD3DA204UDA228U UMD6UMR12N−−R12SMD3DA204KDA228KK BUKBU EMD3DA221K−−VMD3DA221MK−−z Absolute maximum ratings (T a=25°C)Type V RM (V)V R (V)I FM (mA)I O (mA)I surge (mA)(1µs)(TOTAL)Pd(mW)Tj(°C)Tstg(°C)DA2212020200100300150150−55 to +150DA221M 2020200100300150150−55 to +150DA204U 2020200100300200150−55 to +150DA228K 8080200100300200150−55 to +150UMR12N8080200100300200150−55 to +150−55 to +150DA228U 8080200100300200150−55 to +150DA204K 2020200100300200150Peak reverse voltage Peak forward current Mean rectifying current Surge current Power dissipation Junction temperatureStoragetemperature DC reverse voltagez Electrical characteristics (T a=25°C)TypeForward voltageV F (V)Max.I R (µA)Max.Reverse current Fig.Cond.Cond.I F (mA)V R (V)DA221 1.0100.115 1 to 4DA221M 1.0100.115 1 to 45 to 9UMR12N1.21000.180DA204U 1.0100.115 1 to 40.1DA228U 1.210080 5 to 90.11.01015DA204K 1 to 40.1DA228K 1.210080 5 to 9Diodes3/4z Electrical characteristic curves (T a=25°C) (DA221, DA204U, DA204K) …Fig.1 to 4T a =125°CD1D1+D20.40.8 1.2 1.6 2.0 2.41001011.00.0175°C25°C−25°C125°C75°C25°C−25°CF O R W A R D C U R R E N T : I F (m A )FORWARD VOLTAGE : V F (V)Fig.1 Forward characteristicsF O R W A R D C U R R E N T : I F (m A )FORWARD VOLTAGE : V F (V)Fig.2 Forward characteristicsD2 125°CD1 100°C D2 100°CD1 75°C D2 75°C51015200.010.1110100D1 Ta=125°CR E V E R S E CU R R E N T : I R (n A )REVERSE VOLTAGE : V R (V)Fig.3 Reverse characteristics12510C A P A C I T A N C E B E T W E E N T E R M I N A L S : C T (p F )REVERSE VOLTAGE : V R (V)Fig.4 Capacitance between terminals characteristicsDiodes4/4(DA228U, DA228K, UMR12N) …Fig.5 to 9F O R W A R D C U R R E N T : I F (m A )FORWARD VOLTAGE : V F (V)Fig.5 Forward characteristics F O R W A R D C U R R E N T : I F(m A )FORWARD VOLTAGE : V F (V)Fig.6 Forward characteristics R E V E R S E C U R R EN T : I R (n A )REVERSE VOLTAGE : V R (V)Fig.7 Reverse characteristicsR E V E R S E C U R RE N T : I R (n A )REVERSE VOLTAGE : V R (V)Fig.8 Reverse characteristics110C A P A C I T A N C E B E T W E E N T E R M I N A L S : C T (p F )REVERSE VOLTAGE : V R (V)Fig.9 Capacitance between terminals characteristicsAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.0。
UL2054-2004中文版
UL2054標準UL2054安全標準 (鋰電池)前言本標準含有覆蓋UL規定的大類的產品的基本要求。
這些要求基於合理的工程原理，研究和試驗結論以及現場經驗，並且參考了製造商、用戶、檢查機構和其他一些有專業經驗的機構或人士的意見。
A.遵守本標準的要求是製造商在製造產品時應具備的一個基本條件。
B.產品僅能書面滿足本標準條文規定不足以斷定滿足本標準，比如：當檢測和試驗時，發現其他特徵不滿足本標準安全水準的要求。
C.產品採用的材料或結構與本標準技術要求不符的不能認為符合本標準。
如果該產品採用的材料或由採用不同於本標準所列的結構形成；但性能可以符合標準要求的，有可能斷定符合本標準。
D.UL在執行客戶的安全測試要求時，並不承諾為客戶的產品負責，UL只是依據當前水準考慮到的一些實際安全限制及要求為產品提供一個專業的判斷。
UL對產品造成的危害不承擔義務。
E.許多本標準的測試由於其固有的危險性，必須有足夠的人身及財產安全防護措施。
簡介1. 領域1.1 這些要求針對二次（可重複充電）電池。
這些電池包含單芯、兩個或兩個以上多芯串/並聯結構的電池組。
1.2 這些要求目的是降低鋰電池在用於產品時著火或爆炸的危險。
這些電池能否接受並依賴於他們能否滿足所應用的完整產品應符合的要求.1.3 這些要求為了組裝電池供一般的用戶使用,這些要求不適用於那些按產品的標準中的要求的設計為使用連接電池和產品成最終成品的電池的連接,比如合適的電子工具標準UL74 5.1.4 這些要求也傾向於降低用戶更換的Li電池因著火或爆炸而對人身造成的危害。
1.5 這些要求涵概了容量達到10AMH的電芯,,由這些電芯組裝而成的電池組.1.6 本要求不包括食入鋰電池及其組成物造成的有毒危害,也不包括當電池被切開時對人造成的傷害情況。
1.7這些電池包括的金屬Li或Li合金，或Li離子也要達到UL 1642標準對於LI電池的要求.1.8 產品的某些特徵、特性或零部件、材料或整個系統與本標準要求的有所不同時，只要包含著火、電擊、對人可能造成傷害的應採用適當的附加零部件和終端產品要求進行評估，以保證可接受的安全水準。
总牵监理文件(2012-05)(2012-11-07)关于《施工强制性条文执行记录》的相关要求
甘肃光明电力工程咨询监理有限责任公司兰州东～天水～宝鸡750kV输电线路工程总牵监理项目部文件总牵文件[2012]05号关于《施工强制性条文执行记录》的相关要求各监理、施工项目部：本工程建设过程执行《输变电工程建设标准强制性条文实施管理规程》（国家电网科2009-642号）文件要求，本着“强制性条文、强制性执行”的指导思想，为了细化管理，现将相关强条执行细节要求做出统一规定，并已经过11月4日清水会议讨论和11月7日业主项目部会检批准，现予下发执行。
附件：关于《施工强制性条文执行记录》的相关要求。
二O一二年十一月七日主题词：强条执行要求规定兰州东～天水～宝鸡750kV输电线路工程总牵监理部2012年11月07日印发关于《施工强制性条文执行记录》的相关要求一、一、SXMX4SXMX4SXMX4《施工强制性条文实施计划》的报审《施工强制性条文实施计划》的报审工程项目开工前，施工项目部应按照单位、分部、分项工程明确本工程项目所涉及的强制性条文，编制《输电线路工程施工强制性条文执行计划表》（表3.0.2），《输电线路工程施工安全强制性条文执行计划表》（表3.3.2），做为SXMX4《施工强制性条文实施计划》的附件内容，一同报监理项目部审核，业主项目部批准后执行。
二、各阶段《施工强制性条文执行记录表二、各阶段《施工强制性条文执行记录表》》（共9种），详见《输变电工程建设标准强制性条文实施管理规程程建设标准强制性条文实施管理规程》》。
(1)、《开工前施工准备强制性条文执行记录表》（表4.0.2），单位工程正式开工前做一次，形成记录一份。
(2)、《基础工程开工前强制性条文执行记录表》（表5.1.2），基础分部工程正式开工前做一次，形成记录一份。
(3)、《基础施工强制性条文执行记录表》（表5.2.2），以单元工程为单位，一基做一次，形成记录一份。
(4)、《杆塔工程开工前强制性条文执行记录表》（表6.1.2），铁塔分部工程正式开工前做一次，形成记录一份。
ThinkPad L420、L421和L520 说明书
用户指南ThinkPad L420、L421和L520注：在使用本资料及其支持的产品之前，请务必阅读以下信息：•《安全与保修指南》•第vi页“重要安全信息”•第183页附录C“声明”《安全与保修指南》已上传到Web站点。
要参阅它们，请访问，然后单击用用户手册。
第一版(2011年3月)©Copyright Lenovo2011年.LENOVO产品、数据、计算机软件和服务由LENOVO出资独立开发，作为48C.F.R.2.101定义的商用品出售给政府部门，其使用、复制和公开均受相应的权限限制。
有限权利声明：如果产品、数据、计算机软件或服务依照通用服务管理（GSA）合同提供，其使用、复制或公开受编号为GS-35F-05925的合同条款的约束。
目录首先阅读 (v)重要安全信息 (vi)需要立即采取措施的情况 (vi)安全准则 (vii)第1章产品概述 (1)找到计算机控件、接口、功能部件和指示灯 (1)前视图 (1)右视图 (4)左视图 (5)底视图 (6)后视图 (7)状态指示灯 (8)查找重要产品信息 (10)机器类型和型号标签 (10)FCC标识和IC认证编号标签 (10)正品证明标签 (11)功能部件 (12)规格 (13)操作环境 (14)ThinkVantage技术和软件 (14)访问Windows7中的应用程序 (15)Access Connections (16)Active Protection System (16)Fingerprint Software (17)Lenovo ThinkVantage Tools (17)Lenovo ThinkVantage Toolbox (17)Message Center Plus (17)Password Manager (17)Power Manager (18)Product Recovery (18)Presentation Director (18)Rescue and Recovery (18)System Update (18)ThinkVantage GPS (18)第2章使用计算机 (21)注册您的计算机 (21)常见问题 (21)特殊的键和按键 (22)ThinkVantage按键 (23)数字小键盘 (23)功能组合键 (24)音量调节及静音按键 (27)Windows键和应用程序键 (28)使用UltraNav定位设备 (29)使用TrackPoint定位设备 (29)使用触摸板 (30)UltraNav和外接鼠标的工作情况 (31)将UltraNav图标添加到系统托盘中 (32)电源管理 (32)检查电池状态 (32)使用交流电源适配器 (32)给电池充电 (33)最大限度地延长电池寿命 (33)管理电池电量 (33)节能方式 (34)处理电池 (35)连接网络 (36)以太网连接 (36)无线连接 (36)使用投影仪或外接显示器 (43)更改显示设置 (43)连接投影仪或外接显示器 (44)设置演示方案 (48)使用双显示屏 (48)使用颜色概要文件 (50)使用音频功能部件 (50)使用集成摄像头 (51)使用光盘驱动器 (51)使用多媒体读卡器 (52)插入ExpressCard、智能卡或闪存介质卡 (52)取出ExpressCard、智能卡或闪存介质卡 (53)第3章您和您的计算机 (55)辅助功能和舒适性 (55)人机工程学信息 (55)调整计算机以适应您的需要 (56)辅助功能选项信息 (56)全屏放大镜功能 (57)携带计算机旅行 (57)旅行提示 (57)旅行必备附件 (58)第4章安全性 (59)连接线缆锁 (59)使用密码 (59)密码与睡眠（待机）方式 (60)使用密码短语 (60)开机密码 (61)硬盘密码 (62)超级用户密码 (64)©Copyright Lenovo2011年i硬盘安全 (66)设置安全芯片 (66)使用指纹读取器 (67)有关从硬盘驱动器或固态驱动器删除数据的注意事项 (69)使用和了解防火墙 (70)保护数据不被病毒攻击 (70)第5章恢复概述 (71)制作和使用挽救介质 (71)制作挽救介质 (71)使用挽救介质 (72)执行备份和恢复操作 (73)执行备份操作 (73)执行恢复操作 (73)使用Rescue and Recovery工作空间 (74)制作和使用急救盘 (75)制作急救盘 (75)使用急救盘 (75)重新安装预装的应用程序和设备驱动程序 (76)解决恢复问题 (76)第6章更换设备 (79)静电预防 (79)更换电池 (79)更换内存 (81)更换硬盘驱动器 (83)更换固态驱动器 (87)安装和更换mSATA固态驱动器 (91)更换光盘驱动器 (93)更换SIM卡 (94)更换掌托 (96)更换用于无线局域网/WiMAX连接的PCI Express迷你卡 (99)安装和更换用于无线WAN连接的PCI Express微型卡 (101)更换集成摄像头 (103)第7章增强计算机 (107)查找ThinkPad选件 (107)ThinkPad端口复制器和扩展坞 (107)前视图 (107)后视图 (109)连接ThinkPad端口复制器或扩展坞 (111)拆离ThinkPad端口复制器或扩展坞 (114)安全功能部件 (115)使用系统锁定键 (116)第8章高级配置 (117)安装新操作系统 (117)开始前 (117)安装Windows7 (118)安装Windows Vista (118)安装Windows XP (119)安装设备驱动程序 (121)安装4合1多媒体读卡器的驱动程序 (121)安装ThinkPad Monitor File for Windows2000/XP/Vista/7 (121)安装针对Windows2000/XP/Vista/7的Intel芯片组支持 (123)安装其他设备驱动程序 (123)BIOS Setup Utility (123)Config菜单 (124)Date/time菜单 (125)Security菜单 (125)Startup菜单 (126)Restart菜单 (128)BIOS Setup Utility项 (128)更新系统BIOS (133)使用系统管理 (133)系统管理 (134)设置管理功能 (134)第9章预防出现问题 (137)预防问题的常用技巧 (137)确保设备驱动程序为最新 (138)从Web站点获取最新驱动程序 (138)使用ThinkVantage System Update获取最新的驱动程序 (138)保养计算机 (138)清洁计算机外盖 (140)第10章计算机问题故障诊断 (141)诊断问题 (141)使用Lenovo ThinkVantage Toolbox (141)故障诊断 (141)计算机停止响应 (141)处理键盘上泼溅的液体 (142)错误消息和蜂鸣声错误 (142)无消息的错误 (145)内存 (145)联网 (146)键盘和其他定位设备 (150)显示屏和多媒体设备 (151)指纹读取器 (159)电池和电源 (160)驱动器和其他存储设备 (163)软件 (165)端口和接口 (165)第11章获取支持 (167)联系Lenovo之前 (167)注册您的计算机 (167)ii用户指南下载系统更新 (167)记录信息 (167)获取帮助和服务 (168)使用诊断程序 (168)Lenovo支持Web站点 (168)致电Lenovo (168)购买附加服务 (173)附录A法规信息 (175)无线相关信息 (175)UltraConnect无线天线的位置 (176)出口分类声明 (177)电子辐射声明 (177)联邦通信委员会一致性声明 (177)加拿大工业部B类辐射规范一致性声明 (177)欧盟-遵循电磁兼容性指令 (177)德国B类一致性声明 (178)韩国B类一致性声明 (178)日本VCCI B类一致性声明 (178)日本连接到额定电流小于或等于20A/相位的输电线的产品的一致性声明 (179)Lenovo产品台湾服务信息 (179)附录B WEEE和回收声明 (181)EU WEEE声明 (181)日本回收声明 (181)附录C声明 (183)商标 (183)©Copyright Lenovo2011年iiiiv用户指南首先阅读确保遵从下面给出的这些重要技巧，以便充分使用计算机并从中获得无尽乐趣。
PLM20K44产品说明书
2012-12-21
U516
x
U510
x
U512, , U514, U505
x
U506
x
U508, U509
x
U507
x
U900
x
U902
x
D3, D304, D307, D504
x
D303, D305
27V.25W5%SOT-23 COAEXPFC52-A01 COAEXPFC70-A01 COAEXPFC70-A03
COCIPI4X2-A01
COSP05FB 6R8.33W5%1206 2R7.33W5%1206 10K.125W1%0805
22n630VMKP7.5 T50WFETD29 T16A400-5x20AL T3A15400-5x20
Q3, Q7, Q307, Q308, Q508 Q4, Q5, Q8, Q9, Q400, Q401, Q403, Q507, Q404, Q12
Q408
Q11 Q10, Q500 Q509
Q505 U300, U401
U407, U408, U504
Ic Operational Amplifier Lm833 SOIC Narrow body Ic dual gate driver FAN3224CMX SOIC-8 Pulse Width Modulator PFC type 1 rev.03a Final Assembly 01
Ic Comparator Lm339D
Ic Digital Isolator SI8441-C Ic Inverting Scmitt trigger 74AHC1G14 SOT353-1 Diode Signal Bas21 SOT-23 Diode Power 1n4006 Diode Zener 6V2 .225W 2% SOT-23
INA219AIDCNR;INA219AIDR;INA219BIDCNT;INA219AIDCNT;INA219AIDCNRG4;中文规格书,Datasheet资料
/
Product Folder Link(s): INA219
Copyright © 2008–2011, Texas Instruments Incorporated
INA219
SBOS448F – AUGUST 2008 – REVISED SEPTEMBER 2011
Table 1. PACKAGING INFORMATION(1)
PRODUCT INA219A INA219B
PACKAGE-LEAD SO-8
SOT23-8 SO-8
SOT23-8
PACKAGE DESIGNATOR D
DCN D
DCN
PACKAGE MARKING I219A A219 I219B B219
VIN+, VIN–
Common-Mode
SDA
SCL
Input Current Into Any Pin
Open-Drain Digital Output Current
Operating Temperature
Storage Temperature
Junction Temperature
Human Body Model
0
±160
0
±160
PGA = ÷ 8
0
±320
0
±320
Bus Voltage (Input Voltage) Range(2)
BRNG = 1
0
32
0
32
BRNG = 0
0
16
0
16
Common-Mode Rejection Offset Voltage, RTI(3)
MCP41050资料
元器件交易网
MCP41XXX/42XXX
1.0 ELECTRICAL CHARACTERISTICS DC CHARACTERISTICS: 10 kΩ VERSION
Electrical Characteristics: Unless otherwise indicated, VDD = +2.7V to 5.5V, TA = -40°C to +85°C (TSSOP devices are only specified at +25°C and +85°C). Typical specifications represent values for VDD = 5V, VSS = 0V, VB = 0V, TA = +25°C. Parameters Rheostat Mode Nominal Resistance Rheostat Differential Non Linearity Rheostat Integral Non Linearity Rheostat Tempco Wiper Resistance Wiper Current Nominal Resistance Match Potentiometer Divider Resolution Monotonicity Differential Non-Linearity Integral Non-Linearity Voltage Divider Tempco Full Scale Error Zero Scale Error Resistor Terminals Voltage Range Capacitance (CA or CB) Capacitance Bandwidth -3dB Settling Time Resistor Noise Voltage Crosstalk Schmitt Trigger High-Level Input Voltage Schmitt Trigger Low-Level Input Voltage Hysteresis of Schmitt Trigger Inputs Low-Level Output Voltage High-Level Output Voltage Input Leakage Current Pin Capacitance (All inputs/outputs) Power Requirements Operating Voltage Range Supply Current, Active Supply Current, Static Power Supply Sensitivity Note 1: 2: 3: 4: 5: 6: VDD IDDA IDDS PSS PSS 2.7 — — — — — 340 0.01 0.0015 0.0015 5.5 500 1 0.0035 0.0035 V µA µA %/% %/% VDD = 5.5V, CS = VSS, fSCK = 10 MHz, SO = Open, Code FFh (Note 6) CS, SHDN, RS = VDD = 5.5V, SO = Open (Note 6) VDD = 4.5V - 5.5V, VA = 4.5V, Code 80h VDD = 2.7V - 3.3V, VA = 2.7V, Code 80h CW BW tS eNWB CT VIH VIL VHYS VOL VOH ILI CIN, COUT VA,B,W 0 — — — — — — 0.7VDD — — — VDD - 0.5 -1 — — 15 5.6 1 2 9 -95 — — 0.05VDD — — — 10 VDD — — — — — — — 0.3VDD — 0.40 — +1 — V V µA pF IOL = 2.1 mA, VDD = 5V IOH = -400 µA, VDD = 5V CS = VDD, VIN = VSS or VDD, includes VA SHDN=0 VDD = 5.0V, TA = +25°C, fc = 1 MHz pF pF MHz µS nV/√Hz dB V V Note 4 f = 1 MHz, Code = 80h, see Figure 2-30 f = 1 MHz, Code = 80h, see Figure 2-30 VB = 0V, Measured at Code 80h, Output Load = 30 PF VA = VDD,VB = 0V, ±1% Error Band, Transition from Code 00h to Code 80h, Output Load = 30 pF VA = Open, Code 80h, f =1 kHz VA = VDD, VB = 0V (Note 5) N N DNL INL ∆VW/∆T VWFSE VWFSE VWZSE VWZSE 8 8 -1 -1 — -2 -2 0 0 — — ±1/4 ±1/4 1 -0.7 -0.7 +0.7 +0.7 — — +1 +1 — 0 0 +2 +2 Bits Bits LSB LSB LSB LSB LSB LSB Note 3 Note 3 Code FFh, VDD = 5V, see Figure 2-25 Code FFh, VDD = 3V, see Figure 2-25 Code 00h, VDD = 5V, see Figure 2-25 Code 00h, VDD = 3V, see Figure 2-25 R R-DNL R-INL ∆RAB/∆T RW RW IW ∆R/R 8 -1 -1 — — — -1 — 10 ±1/4 ±1/4 800 52 73 — 0.2 12 +1 +1 — 100 125 +1 1 kΩ LSB LSB ppm/°C Ω Ω mA % MCP42010 only, P0 to P1; TA = +25°C VDD = 5.5V, IW = 1 mA, code 00h VDD = 2.7V, IW = 1 mA, code 00h TA = +25°C (Note 1) Note 2 Note 2 Sym Min Typ Max Units Conditions
AL0204-0510电感规格书磁珠_GAOQS
1、订货代码 HOW TO ORDER举例 For exampleAL 0307 — 220 K P 52 EA B C D E F GD:感量偏差ToleranceJ ±5.0%K ±10%M ±20%B:尺寸Dimensions（mm）类型Type外径D max体长L max0204 2.3 4.20307 2.8 7.00410 4.0 10.50510 5.0 10.5 A:产品类别Product typeAL轴向色码电感器Axial color code inductorC:标称电感量Nominal inductance (μH)前两位数字为有效数字，后一位数字表示零的个数。
The first two digits are significant, and thethird digit is number of zero.*例如 For example：101=100μH；5R6=5.6μHR22=0.22μHE:包装方式Packaging styleP盒带包装Ammo编带Tape&reel T 卷带包装ReelF直脚轴向AxialL直脚成型Straight lead formedV弯脚成型Bent lead formed散包装BulkVK弯脚K型Bent lead K formedF：引脚形式Lead configuration26编带内距：26mmTape width:编带Tape&reel 52编带内距：52mmTape width:05引脚脚距：5.08mmFormed lead pitch:07引脚脚距：7.5mmFormed lead pitch:10引脚脚距：10.0mmFormed lead pitch:12引脚脚距：12.5mmFormed lead pitch:15引脚脚距：15.0mmFormed lead pitch:17引脚脚距：17.5mmFormed lead pitch:引脚成型Formedlead20引脚脚距：20.0mmFormed lead pitch: G:备注RemarkE无铅Lead Free空格Blank含铅Lead Contained^_^2、外形尺寸 EXTERNAL DIMENSIONS尺 寸Body size （mm ）类型 TypeφD ≤ L ≤ t Φd H ≥AL0204 2.3 4.2t =5.08±0.6t =7.50±0.60.50 ±0.05AL0307 2.8 7.0t =10.0±0.6 t =12.5±0.60.50 ±0.05AL0410 4.0 10.5t =12.5±0.6 t =15.0±0.6t =17.5±0.6 t =20.0±0.60.60 ±0.05AL0510 5.0 10.5 t =15.0±0.6t =17.5±0.6t =20.0±0.60.65 ±0.0520轴向（Axial ）直脚成型（L type ）弯脚成型（V type ） 弯脚K 型（VK type ）3、产品结构 STRUCTURE序号 NO. ① 磁芯 Core ②漆包线 Wire ③引脚 Lead ④涂覆层 Coating ⑤色码Color code材料名称 Material name铁氧体 Ferrite漆包铜线Enamelled wire镀锡铜线 Tinned copperwire环氧树脂 Epoxy resin环氧色漆 Epoxy paint for Color coding^_^４、色码标记代号 MARKING标称电感量Nominal inductance（μH）感量偏差Tolerance第一色环1st color zone第二色环2nd color zone第三色环3rd color zone第四色环4th color zone第一数字1st digit 第二数字2nd digit第三数字3rd digit黑Black 0 0× 100（1）M：±20%棕Brown 1 1× 101（10）红Red 2 2× 102（100）橙Orange 3 3× 103（1000）黄Yellow 4 4× 104（10000）绿Green 5 5× 105（100000）蓝Blue6 6 紫Purple7 7 灰Gray8 8 白White9 9金Gold / /× 10-1（0.1）J：±5%银Silver / /× 10-2（0.01）K：±10%*例如e.g. ：标称电感量及偏差为22uH,±5%的电感器其色码为：红+红+黑+金；If nominal inductance & tolerance is22uH,±5%, respectively red+red+black+gold should be marked;标称电感量及偏差为1.0uH,±10%的电感器其色码为：棕+黑+金+银；If nominal inductance & tolerance is 1.0uH,±10%, respectively brown+black+gold+silver should be marked;标称电感量及偏差为0.22uH,±20%的电感器其色码为：红+红+银+黑。
国内外压敏电阻型号及参数
国内外压敏电阻型号及参数国内外压敏电阻型号及参数压敏电阻220V电压的电路国内型号：MYG14K471（对应的国外型号：US 470NR-14D）MYG05K471（对应的国外型号：US 470NR-5D）22V左右的电路国内型号：MYG14K470（对应的国外型号：US 470NR-14D）MYG05K470（对应的国外型号：US 470NR-5D）。
压敏电阻型号及参数压敏电阻百科名片压敏电阻“压敏电阻"是中国大陆的名词，意思是在一定电流电压范围内电阻值随电压而变，或者是说"电阻值对电压敏感"的阻器。
英文名称叫“Voltage Dependent Resistor”简写为“VDR”, 或者叫做“Varistor"。
压敏电阻器的电阻体材料是半导体，所以它是半导体电阻器的一个品种。
现在大量使用的"氧化锌"（ZnO）压敏电阻器，它的主体材料有二价元素（Zn）和六价元素氧（O）所构成。
所以从材料的角度来看，氧化锌压敏电阻器是一种“Ⅱ-Ⅵ族氧化物半导体”。
在中国台湾，压敏电阻器称为"突波吸收器",有时也称为“电冲击（浪涌）抑制器（吸收器）”。
目录[隐藏]1、压敏电阻电路的“安全阀”作用2、压敏电阻的应用类型3、保护用压敏电阻的基本性能4. 压敏电阻的基本参数1、压敏电阻电路的“安全阀”作用2、压敏电阻的应用类型3、保护用压敏电阻的基本性能4. 压敏电阻的基本参数[编辑本段]1、压敏电阻电路的“安全阀”作用压敏电阻有什么用？压敏电阻的最大特点是当加在它上面的电压低于它的阀值" UN"时，流过它的电流极小，相当于一只关死的阀门，当电压超过UN时，流过它的电流激增，相当于阀门打开。
利用这一功能，可以抑制电路中经常出现的异常过电压，保护电路免受过电压的损害。
[编辑本段]2、压敏电阻的应用类型不同的使用场合，应用压敏电阻的目的，作用在压敏电阻上的电压/电流应力并不相同，因而对压敏电阻的要求也不相同，注意区分这种差异，对于正确使用是十分重要的。
广州唯创电子有限公司 WTN4 系列语音芯片说明书
广州唯创电子有限公司MP3录音模块WTN4系列语音芯片说明书3I/O Single-Chip Speech SynthesizerV1.052017-01-17Note：WAYTRONIC ELECTRONIC CO.,LTD.reserves the right to change this document without prior rmation provided by WAYTRONIC is believed to be accurate and reliable.However,WAYTRONIC makes no warranty for any errors which may appear in this document.Contact WAYTRONIC to obtain the latest version of device specifications before placing your orders.No responsibility is assumed by WAYTRONIC for any infringement of patent or other rights of third parties which may result from its use.In addition,WAYTRONIC products are not authorized for use as critical components in life support devices/systems or aviation devices/systems,where a malfunction or failure of the product may reasonably be expected to result in significant injury to the user, without the express written approval of WAYTRONIC.目录1、概述： (3)2、功能简述： (3)3、管脚描述： (4)3.1、WTN4045/WTN4065/WTN4105-8S管脚介绍 (4)3.2、WTN4165-8S管脚介绍 (4)3.3、极限参数： (5)3.4、直流特性： (5)4、一线串口通讯： (6)4.1、管脚分配: (6)4.2、一线语音地址对应关系: (6)4.3、一线语音及命令码对应表: (7)4.4、一线串口时序图: (7)4.5、一线串口程序范例： (8)5、两线串口通讯： (9)5.1、管脚分配： (9)5.2、语音地址对应关系： (9)5.3、语音及命令码对应表： (9)5.4、两线串口时序图： (10)5.5、两线串口程序范例： (10)6、数脉冲控制方式： (11)6.1、管脚分配： (11)6.2、语音地址对应关系： (11)6.3、数脉冲控制时序： (12)6.4、数脉冲程序范例： (12)7、应用电路： (13)7.1、WTN4045/065/105-8S一线串口控制应用电路 (13)7.2、WTN4045/065/105-8S两线串口控制应用电路 (14)7.3、WTN4045/065/105-8S数脉冲控制应用电路 (14)7.4、WTN4165-8S一线串口控制应用电路 (15)7.5、WTN4165-8S两线串口控制应用电路 (15)7.6、WTN4165-8S数脉冲控制应用电路 (16)8、管脚封装图： (16)9、版本记录 (17)1、概述WTN4系列语音芯片是广州唯创电子有限公司推出的一系列语音芯片，其性能优越，价格实惠。
英飞凌 DF4-19MR20W3M1HF_B11 EasyPACK 模块 数据表
EasyPACK ™ 模块 采用 CoolSiC ™ Trench MOSFET 带有PressFIT 压接管脚和温度检测NTC 特性•电气特性-V DSS = 2000 V-I DN = 60 A / I DRM = 120 A -高电流密度-低电感设计•机械特性-集成的安装夹使安装坚固-PressFIT 压接技术-集成NTC 温度传感器可选应用•太阳能应用产品认证•根据 IEC 60747、60749 和 60068 标准的相关测试，符合工业应用的要求。
描述DF4-19MR20W3M1HF_B11EasyPACK ™ 模块内容描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1特性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1可选应用 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1产品认证 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1内容 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1封装 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4Diode, 轉換器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 5负温度系数热敏电阻 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 6特征参数图表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 7电路拓扑图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 8封装尺寸 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 9模块标签代码 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12修订历史 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13免责声明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .141封装表 1绝缘参数特征参数代号标注或测试条件数值单位绝缘测试电压V ISOL RMS, f = 50 Hz, t = 1 min 3.2kV 内部绝缘基本绝缘 (class 1, IEC 61140)Al2O3爬电距离d Creep端子至散热器10.4mm 爬电距离d Creep端子至端子10.2mm 电气间隙d Clear端子至散热器10.1mm 电气间隙d Clear端子至端子9.4mm 相对电痕指数CTI > 400相对温度指数 (电)RTI封装140°C 表 2特征值特征参数代号标注或测试条件数值单位最小值典型值最大值杂散电感,模块L sCE14nH 储存温度T stg-40125°CM5, 螺丝 1.3 1.5Nm 模块安装的安装扭距M根据相应的应用手册进行安装重量G78g 注:The current under continuous operation is limited to 25 A rms per connector pin.2MOSFET表 3最大标定值特征参数代号标注或测试条件数值单位漏源极电压V DSS T vj = 25 °C2000V 植入漏极电流I DN60A 连续漏极直流电流I DDC T vj = 175 °C, V GS = 18 V T H = 65 °C50A 漏极重复峰值电流I DRM verified by design, t p limited by T vjmax120A 柵-源瞬态最大电压V GS D < 0.01-10/23V 柵-源稳态最大电压V GS-7/20V表 4推荐值特征参数代号标注或测试条件[ZH]Values单位通态栅极电压V GS(on)18V 断态栅极电压V GS(off)-3V表 5特征值特征参数代号标注或测试条件数值单位最小值典型值最大值漏源通态电阻R DS(on)I D = 60 A V GS = 18 V,T vj = 25 °C17.226.5mΩV GS = 18 V,T vj = 125 °C36.6V GS = 18 V,T vj = 175 °C51.7栅极阈值电压V GS(th)I D = 34 mA, V DS = V GS, T vj = 25 °C, (tested after1ms pulse at V GS = +20 V)3.454.35.15V 栅极电荷Q G V DD = 1200 V, V GS = -3/18 V0.234µC 内部栅极电阻R Gint T vj = 25 °C 3.8Ω输入电容C ISS f = 100 kHz, V DS = 1200 V,V GS = 0 VT vj = 25 °C7.24nF输出电容C OSS f = 100 kHz, V DS = 1200 V,V GS = 0 VT vj = 25 °C0.169nF反向传输电容C rss f = 100 kHz, V DS = 1200 V,V GS = 0 VT vj = 25 °C0.012nF C OSS存储能量E OSS V DS = 1200 V, V GS = -3/18 V, T vj = 25 °C154µJ 漏源泄漏电流I DSS V DS = 2000 V, V GS = -3 V T vj = 25 °C0.012205µA 栅极漏电流I GSS V DS = 0 V, T vj = 25 °C V GS = 20 V400nA开通延迟时间(感性负载)t d on I D = 60 A, R Gon = 1.6 Ω,V DD = 1200 V,V GS = -3/18 V T vj = 25 °C38.1ns T vj = 125 °C38.1T vj = 175 °C38.1上升时间(感性负载)t r I D = 60 A, R Gon = 1.6 Ω,V DD = 1200 V,V GS = -3/18 V T vj = 25 °C26ns T vj = 125 °C26T vj = 175 °C26关断延迟时间(感性负载)t d off I D = 60 A, R Goff = 2 Ω,V DD = 1200 V,V GS = -3/18 V T vj = 25 °C74.4ns T vj = 125 °C81.5T vj = 175 °C83.9(待续)表 5(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值下降时间(感性负载)t f I D = 60 A, R Goff = 2 Ω,V DD = 1200 V,V GS = -3/18 V T vj = 25 °C16ns T vj = 125 °C16.1T vj = 175 °C17.1开通损耗能量 (每脉冲)E on I D = 60 A, V DD = 1200 V,Lσ = 35 nH, V GS = -3/18 V,R Gon = 1.6 Ω, di/dt = 5kA/µs (T vj = 175 °C)T vj = 25 °C 1.5mJ T vj = 125 °C 1.5T vj = 175 °C 1.5关断损耗能量 (每脉冲）E off I D = 60 A, V DD = 1200 V,Lσ = 35 nH, V GS = -3/18 V,R Goff = 2 Ω, dv/dt = 56.14kV/µs (T vj = 175 °C)T vj = 25 °C0.435mJ T vj = 125 °C0.481T vj = 175 °C0.529结－散热器热阻R thJH每个MOSFET0.515K/W 允许开关的温度范围T vj op-40175°C注:The body diode of CoolSiC™ Trench MOSFET cannot be used for polarity protection. An external diode is needed for this purpose.The selection of positive and negative gate-source voltages impacts the long-term behavior of the MOSFETand body diode. The design guidelines described in Application Notes AN 2018-09 and AN 2021-13 must beconsidered to ensure sound operation of the device over the planned lifetime.T vj op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailedspecifications, please refer to AN 2021-133Body diode表 6特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V SD I SD = 60 A, V GS = -3 V T vj = 25 °C 4.6 6.15VT vj = 125 °C 4.15T vj = 175 °C44Diode, 轉換器表 7最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C2000V (待续)5 负温度系数热敏电阻表 7(续) 最大标定值特征参数代号标注或测试条件数值单位连续正向直流电流I F40A 正向重复峰值电流I FRM t P = 1 ms80A I2t-值I2t t P = 10 ms, V R = 0 V T vj = 125 °C90A²sT vj = 175 °C70表 8特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 40 A T vj = 25 °C 1.50 1.85VT vj = 125 °C 2.17T vj = 175 °C 2.67结－散热器热阻R thJH每个二极管0.685K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions for booster diode. For detailed specifications, please refer to AN 2021-135负温度系数热敏电阻表 9特征值特征参数代号标注或测试条件数值单位最小值典型值最大值额定电阻值R25T NTC = 25 °C5kΩR100偏差ΔR/R T NTC = 100 °C, R100 = 493 Ω-55%耗散功率P25T NTC = 25 °C20mW B-值B25/50R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]3375K B-值B25/80R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]3411K B-值B25/100R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]3433K 注:根据应用手册标定7电路拓扑图图 18封装尺寸图 29模块标签代码图 3修订历史修订历史修订版本发布日期变更说明0.102022-07-05Initial version1.002022-07-15Final datasheetTrademarksAll referenced product or service names and trademarks are the property of their respective owners.Edition 2022-07-15Published byInfineon Technologies AG 81726 Munich, Germany© 2022 Infineon Technologies AG All Rights Reserved.Do you have a question about any aspect of this document? Email: ********************Document referenceIFX-ABE754-002重要提示本文档所提供的任何信息绝不应当被视为针对任何条件或者品质而做出的保证（质量保证）。
海尔MX4、MX6系列(原奥蕴多联机)售后培训资料101104
AC220V，2A /
SV11 无
/
SV9 无
/
Toilp 无
/
温度传感器 Tsco 无
/
Tliqsc 无
/
第 12 页 共 65 页
备注
2.3 系统图中各种温度传感器、电磁阀线圈对应专用号(易混淆)
专用号
名称
规格
0010452887
SV1 线圈(红色 3 芯）
红色 3 芯
0010758843
SV1 电磁阀阀体
SV9 电磁阀阀体
2A
0010452892
SV10 线圈(白色 4 芯)
白色 4 芯
0010758843
SV10 电磁阀阀体
2A
0010452893
SV11 线圈(蓝色 4 芯)
蓝色 4 芯
0010758843
SV11 电磁阀阀体
2A
0010452889
SV3i 线圈(白色 3 芯）
白色 3 芯
0010758843
MX4、MX6 系列多联机售后培训资料
※与 MX6 系列不同的主要零部件性能：
名称 标号
用途
仕样
电子膨胀阀 LEVb 无
/
Tdi/Toil 大于 105℃时开启，Tdi/Toil 小于 90℃时 AC220V，2A SV3i 关闭。
电磁阀
SV3 Td1 大于 105℃时开启，Td1 小于 90℃时关闭。 SV10 无
SV3i 电磁阀阀体
2A
0010452887
SV3 线圈(红色 3 芯）
红色 3 芯
0010758843
SV3 电磁阀阀体
2A
0010451303
KE04子系列数据手册说明书
MKE04P24M48SF0 KE04子系列数据手册支持以下产品：MKE04Z8VTG4(R)、MKE04Z8VWJ4(R)和MKE04Z8VFK4(R)主要功能•工作范围–电压范围：2.7至5.5 V–Flash编程电压范围：2.7至5.5 V–温度范围（环境）：-40至105°C•性能–最高48 MHz的ARM® Cortex-M0+内核–单周期32位 x 32位乘法器–单周期I/O访问端口•存储器和存储器接口–最高8 KB的Flash–最高1 KB的RAM•时钟–振荡器(OSC) - 支持32.768 kHz晶振或4 MHz至24 MHz晶振或陶瓷谐振器；可选择低功耗或高增益振荡器–内部时钟源(ICS) - 内部FLL，集成内部或外部基准时钟源、37.5 kHz预校准内部基准时钟源，可用于48 MHz系统时钟–内部1 kHz低功耗振荡器(LPO)•系统外设–电源管理模块(PMC)有三个功率模式：运行、待机和停止–可复位、中断并带可选跳变点的低压检测(LVD)–带独立时钟源的看门狗(WDOG)–可配置循环冗余校验(CRC)模块–串行线调试(SWD)接口–SRAM位操作映射区域(BIT-BAND)–位处理引擎(BME)•安全性和完整性模块–每个芯片拥有80位唯一标识(ID)号•人机接口–最多22个通用输入/输出(GPIO)–两个8位键盘中断(KBI)模块–外部中断(IRQ)模块•模拟模块–一个12通道，12位SAR ADC，可工作在停止模式，可选硬件触发源(ADC)–两个包含6位DAC和可配置参考输入的模拟比较器(ACMP)•定时器–一个6通道FlexTimer/PWM (FTM)–一个2通道FlexTimer/PWM (FTM)–一个2通道周期性中断定时器(PIT)–一个脉宽计数器(PWT)–一个实时时钟(RTC)•通信接口–一个SPI模块(SPI)–一个UART模块(UART)–一个I2C模块(I2C)•封装选项–24引脚QFN–20引脚SOIC–16引脚TSSOPFreescale Semiconductor数据手册: 技术数据Rev 3, 3/2014 Freescale reserves the right to change the detail specifications as may berequired to permit improvements in the design of its products.© 2013 Freescale Semiconductor, Inc.目录1订购器件 (3)1.1确定有效的可订购器件 (3)2器件标识 (3)2.1说明 (3)2.2格式 (3)2.3字段 (3)2.4示例 (4)3参数分类 (4)4额定值 (4)4.1热学操作极限 (4)4.2湿度操作极限 (5)4.3ESD操作额定值 (5)4.4电压和电流操作额定值 (5)5通用 (6)5.1静态电气规格 (6)5.1.1DC特性 (6)5.1.2电源电流特性 (12)5.1.3EMC性能 (13)5.2动态规格 (14)5.2.1控制时序 (14)5.2.2FTM模块时序 (15)5.3热规格 (16)5.3.1热特性 (16)6模块工作要求和行为 (17)6.1内核模块 (17)6.1.1SWD电气规格 (17)6.2外部振荡器(OSC)和ICS特性 (18)6.3NVM规格 (20)6.4模拟 (21)6.4.1ADC特性 (21)6.4.2模拟比较器(ACMP)电气规格 (23)6.5通信接口 (24)6.5.1SPI开关规格 (24)7尺寸 (27)7.1获取封装尺寸 (27)8引脚分配 (27)8.1信号多路复用和引脚分配 (27)8.2器件引脚分配 (29)9修订历史 (30)订购器件1.1确定有效的可订购器件有效可订购器件编号已发布在网络上。
X4说明书
Impulse X4 系列便携式复合气体检测仪操作说明书！重要提示：！在首次使用仪器以前请认真阅读本手册，您将会掌握仪器正确的使用方法和了解仪器的功能，包括操作，维护，功能设置等内容。
！为了使操作者更安全，请按照手册中的要求，定期对仪器进行标定。
！如果在使用过程中，遇到的故障或问题在本手册中没有提到，请直接联系制造商Zellweger Analytics，或联系当地的代理商/服务商。
！警告和注意：·更换任何元器件都有可能损坏仪器的本质安全结构。
·如果需要使用存储卡，请选用Zellweger Analytics 提供的存储卡（订货号2566-0435），使用其它的存储卡有可能损坏仪器的本质安全结构。
·在允许的储存期之后激活检测器，有可能影响仪器的使用性能和保质期。
·应使用许可的5号干电池，如劲量电池，不要使用质量低下的干电池，以免影响仪器的本质安全性能。
·在更换电池时，应同时更换2节型号相同的新电池。
·在电池欠压提示后，应尽快更换新电池，以免旧电池漏液损坏仪器。
·在低温环境下，电池的寿命会缩短。
·更换电池时，应该在安全环境下进行。
·当更换任何一个传感器的情况下，都需要对仪器进行标定。
·在每天使用以前，应完成仪器的自检过程。
·定期的对仪器用标气进行测试，检查声、光、振动报警是否正常。
·标定时应选用厂家或国家认证合格企业提供的标准气体。
·标定时应在良好通风的环境下进行，以避免污染。
·不要在仪器电量不足的情况下标定。
·不要在富氧的环境下使用本仪器。
·可燃气体传感器的灵敏度会受到高浓度硫化物，卤素化合物，含硅化合物，以及含铅气体或蒸汽的影响，也叫“中毒”，应避免在以上的环境中使用仪器，如果必须使用，则使用完后应对仪器进行检测和标定，以免影响以后的使用。
E4说明书
SYSTEM 1 161. 系统简介本报警器是一款无线远距离的报警系统，由报警主机和1-98个无线大功率探测器(发射机)组成，构成一套完整的无线区域报警系统。
它采用微电脑集成和数字脉冲电路，性能稳定、抗干扰强、灵敏度高、保密性好，既能灵敏探测人体的红外热辐射，而对白光、强光的红外热辐射具有很强的抑制作用。
当报警发生时，加密的无线电信号在特定条件下能够传输5-10KM ，主机声光报警，显示警情方位，自动锁存报警时间；同时通过电话线，将警情上报到管理处、派出所、110指挥中心。
特别适用于部队、工矿、学校、博物馆、仓库、商店、档案室及机关企事业单位等要害部门的防盗报警。
2． 性能特点⏹ 1~98路为无线防区⏹ 00为紧急防区，99为有线防区 ⏹ 采用无线自动学习对码，简单快捷 ⏹ 万年时钟显示，报警时钟记忆 ⏹ LED 锁定显示，警情清晰可查 ⏹ 人性化功能设计，操作简单明了 ⏹ 空旷无线发射距离可达5-10KM ⏹ ISD 10秒录音功能，电话接警自动播放 ⏹ 常开输入、输出，DC12V 报警输入、输出 ⏹ 100dB 报警音量，警音00~99分钟可调 ⏹ 2组定时布防、撤防设置，并显示当前状态 ⏹ 电话模块选配，预设6组报警电话拨号功能 ⏹ 可充电池组选配，停电24小时待机工作 ⏹ 60条报警信息记录，滚动显示，方便查询⏹远程红外、远程烟感探测器，远程有线转无线转发器⏹电脑联网模块选配，电脑实时显示和管理报警信息和电子地图3． 系统构成固定电话接警中心移动电话电话网络SYSTEM1 164． 主机简介⏹ [1]布/撤防键：用于对报警器布防/撤防操作。
⏹ [2]布防指示灯：主机布防指示灯亮,主机撤防指示灯熄。
⏹[3]时钟显示：平时作为时钟显示,秒灯闪烁;在接收报警信息时作报警时间显示,秒灯长亮显示;在进入设置状态后作设置内容显示,秒灯长亮显示。
⏹[4]状态显示：平时为布防ON 、撤防OF 显示；报警时为防区号显示；在进入功能设置时为功能地址码显示。
AT89C51RD2-IM中文资料
AT89C51RD2 / AT89C51ED2 QualPack Qualification PackageAT89C51ED2FLASH 8-bit C51 Microcontroller64 Kbytes FLASH, 2 Kbytes EEPROMAT89C51RD2 / AT89C51ED2JULY 2003AT89C51RD2 / AT89C51ED2 QualPack 1 Table of contents1TABLE OF CONTENTS (2)2GENERAL INFORMATION (3)3TECHNOLOGY INFORMATION (4)3.1W AFER P ROCESS T ECHNOLOGY (4)3.2P RODUCT D ESIGN (5)3.3D EVICE CROSS SECTION (6)4QUALIFICATION (7)4.1Q UALIFICATION M ETHODOLOGY (7)4.2Q UALIFICATION T EST M ETHODS (8)4.3W AFER L EVEL R ELIABILITY (9)4.3.1Electromigration (9)4.3.2Hot Carriers Injection (11)4.3.3Time Dependent Dielectric Breakdown (12)4.3.4FLASH Characteristics (14)4.4D EVICE R ELIABILITY (18)4.4.1Operating Life Testing (18)4.4.2ESD / Latch-up (18)4.4.3FLASH and EEPROM Data Retention and Endurance Cycling (18)4.4.4AT89C51ED2 Operating Reliability Calculation (20)4.5AT89C51ED2 P ACKAGING RELIABILITY (21)4.6AT89C51ED2 Q UALIFICATION STATUS (21)5ENVIRONMENTAL INFORMATION (22)6OTHER DATA (23)6.1ISO / TS16949 : 2002 C ERTIFICATE (23)6.2D ATA B OOK R EFERENCE (24)6.3R EVISION H ISTORY (24)AT89C51RD2 / AT89C51ED2 QualPack 2 General InformationProduct Name: AT89C51RD2Function: 8-bit Microcontroller with 64 Kbytes FLASHSPI InterfaceProduct Name: AT89C51E2Function: 8-bit Microcontroller with 64 Kbytes FLASH, 2 Kbytes EEPROMSPI InterfaceWafer Process: Logic CMOS 0.35 um with embedded FLASHAvailable Package Types PLCC 44, VQFP 44, PLCC 68, VQFP 68 ,PDIL 40Other Forms: Die, WaferLocations:Process Development, Atmel Colorado Springs, USAProduct Development Atmel Nantes, FranceWafer Plant Atmel Colorado Springs, USAQC Responsibility Atmel Nantes, FranceProbe Test Atmel Colorado Springs, USAAssembly Depending on packageFinal Test Atmel TSTI Manila, PhilippinesLot Release Atmel Nantes, FranceShipment Control Global Logistic Center, PhilippinesQuality Assurance Atmel Nantes, FranceReliability Testing Atmel Nantes, FranceFailure Analysis Atmel Nantes, FranceQuality ManagementAtmel Nantes, FranceSigned: Pascal LECUYERAT89C51RD2 / AT89C51ED2 QualPack 3 Technology Information3.1 Wafer Process TechnologyProcess Type (Name): Logic 0.35um with embedded FLASH (AT56800)Base Material: Epitaxied SiliconWafer Thickness (final) 475 umWafer Diameter 150 mmNumber Of Masks 27Gate Oxide (Logic transistors)Material Silicon DioxideThickness 68AGate Oxide (EPROM cell)Material Silicon DioxideThickness 390APolysiliconNumber of Layers 2Thickness Poly 1 1400A AmorphousThickness Poly 2 3200AMetalNumber of Layers 3Material: Aluminum CopperLayer 1 Thickness 5000ALayer 2 Thickness 5000ALayer 3 Thickness 8000APassivationMaterial Oxide HDP/ Oxy-nitrideThickness 21000AAT89C51RD2 / AT89C51ED2 QualPack 3.2 Product DesignDie Size 17,9 mm2Pad Size Opening / Pitch 66 um * 66 um / 111 umLogic Effective Channel Length 0.35 µmGate Poly Width (min.) 0.35 µmGate Poly Spacing (min.) 0.42 µmMetal 1 Width 0.42 µmMetal 1 Spacing 0.49 µmMetal 2 Width 0.56 µmMetal 2 Spacing 0.49 µmMetal 3 Width 0.56 µmMetal 3 Spacing 0.49 µmContact Size 0.35 µmContact Spacing 0.42 µmVia 1 Size 0.42 µmVia 2 Size 0.42 µmRev. 0 – 2003 July 5AT89C51RD2 / AT89C51ED2 QualPack 3.3 Device cross sectionAT56Kxx cross sectionAT89C51RD2 / AT89C51ED2 QualPack 4 Qualification4.1 Qualification MethodologyAll product qualifications are split into three distinct steps as shown below. Before a product is released for use, successful qualification testing are required at wafer, device and package level.- Wafer Level Reliability consists in testing individually basic process modules regarding their well known potential limitations (Electro-migration, Hot Carriers Injection, Oxide Breakdown, NVM Data Retention).Each test is performed using wafer process specific structures.- Device reliability is covering either dice design and processing aspects. The tests are performed on device under qualification, but generic data may also be considered for reliability calculation.- For each package type proposed in the Datasheet, it is verified that qualification data are available. If not qualification tests are carried out for the new package types. In addition, one package type is selected to verify packaging reliability of the device under qualification.AT89C51RD2 / AT89C51ED2 QualPack 4.2 Qualification Test MethodsGeneral Requirements for Plastic packaged CMOS ICs:Standard Test Description AcceptanceMIL-STD 883 Method 1005 Electrical Life Test (Early Failure Rate)48 hours 140°C0/300 - 48hMIL-STD 883 Method 1005 Electrical Life Test (Latent Failure Rate)1000 hours 140°C Dynamic or Static0/100 - 500hMIL-STD 883 Method 3015.7Electrostatic Discharge HBM+/-2000v 1.5kOhm/100pF/3 pulses0/3 per levelJEDEC 78 Latch up50mW power injection, 50% overvoltage @125°C0/5 per stressAEC Q100 Method 005NVM EnduranceProgram Erase Cycles 25°C0/50 - 10kcAEC Q100 Method 005NVM Data RetentionHigh Temperature Storage 165°C0/50 - 500hMIL-STD 883 Method 1010Temperature Cycling1000 cycles –65°C/150°C air/air0/50 - 500cAtmel PAQA0184 HAST after Preconditioning144 hours 130°C/85%RH0/50 – 96hEIA JESD22-A10185/85 Humidity Test1000 hours 85°C/85%RH0/50 - 500hEIA JESD22-A110HAST336 hours 130°C/85%RH0/50 - 168hEIA JEDEC 20-STDPreconditioningSoldering Stress 220°C/235°c/3 times0/11 per classMIL-STD 883Method 2003Solderability 0/3MIL-STD 883Method 2015Marking Permanency 0/5AT89C51RD2 / AT89C51ED2 QualPack 4.3 Wafer Level Reliability4.3.1 ElectromigrationPurpose:To evaluate the AT56800, AT35500, and AT37000 processes for Metal 1, Metal 3 &Via Electromigration Reliability. These 3 processes have the same steps for interconnect levels.Test Parameters:Metal 1 & Metal 3:Sample Size = 15Temp = 250C with Joule heating .J = 3.5E06 A/cm2.Via:Sample Size = 15Temp = 200C with Joule heating.J = 2.5E06 A/cm2.Black’s Equation Parameters:Failure Criteria - 10% increase in resistance. Data taken every 1% change.n = 2Ea = 0.6eVLifetime Predictions:Metal 1 :Split 1 - Tf.1% exp = ~ 28 hrs Tf.01% op = ~ 28 hrs x 39706 accel = 127 years.(Sigma = 2.7118 hours, Accel temp = 130, Accel current = 306)Metal 3 :Split 3 - Tf.1% exp = ~ 140 hrs Tf.01% op = ~ 140 hrs x 39706 accel = 634 years.(Sigma = 1.8782 hours, Accel temp = 130, Accel current = 306)VIA :Split 4 - Tf.1% exp = ~ 22 hrs Tf.1% op = ~ 22 hrs x 7144 accel = 18 years.(Sigma = 2.59 hours, Accel temp = 31.75, Accel current = 225) (9/15 fails)Conclusion:All splits pass the minimum 10 years lifetime.AT89C51RD2 / AT89C51ED2 QualPack Test results :AT56800 metal 1 results AT56800 metal 3 resultsAT56800 VIA resultsElectromigration summary table:Level SampleSizeFails @10%Tf.1%Lifetime (yrs)M1 15 9 140M3 15 7 1088Via 15 9 19AT89C51RD2 / AT89C51ED2 QualPack 4.3.2 Hot Carriers InjectionTest conditionsThe test is performed by forcing a high drain bias on the test device (Vds>Vddmax) to accelerate the carriers to the maximum. At the same time the gate bias (Vgs) is chosen in order to maximize the injection of carriers into the gate oxide and also the substrate. WLR_B n-channel W/L 0.35um/25um the stress is performed on a number of transistors, each at a different stress condition Vds,stress and Vgs,stress. For each transistor, the time to reach the failure criteria (dIdsat/Idsat=10%) is obtained. NMOS is more sensitive to hot carriers compared to PMOS. Consequently NMOS is the only structure tested.MeasurementAT568T7 lot 1J0433 has been measured using the WLR_B hot electron structure with standard drain.NMOS W/L = 25/0.35 um.ResultsConclusionThe extrapolated life time in the worst case conditions (@Vds=Vdd max & Vgs set to maximize substrate current) is much greater than 0.2 years in DC mode (qualification requirement) which is equivalent to more than 10 years in AC mode.AT89C51RD2 / AT89C51ED2 QualPack 4.3.3 Time Dependent Dielectric BreakdownPurpose:To evaluate the AT56800 thin gate oxide TDDB performance as follows:a) To determine the activation energy of gate oxide failures on STI active edge capacitorsb) To determine the field acceleration factor for intrinsic gate oxide failuresc) To determine the sigma the lognormal standard deviation of the time to breakdown distribution of theintrinsic gate oxideTest Parameters:Lot 9G3470 (wafers 4, 5, 18)Min thickness: 72.9AMax thickness: 74.7ACapacitor size: 6.267 um2The stress conditions used are shown below:Temperature/Field 9.5MV/cm 10.0MV/cm 10.5MV/cm225C N=5 N=5 N=5200C N=5 N=5 N=5175C N=5 N=5 N=6Accumulated total stress time: 132 hours / 46 capacitorsCalculation Parameters:Failure Criteria: 0.01% failuresTemp/Voltage use: 105°C / 3.3VOxide thickness: 63A (target –10%)Lifetime Prediction:The equation used to describe the breakdown of gate oxides is:Tbd(i) = exp(SIGMA*Z(i) + GAMMA*Eox +Ea/kT + T0)WhereTbd(i) is the time to breakdown of the i th capacitor,SIGMA is the lognormal standard deviation of the breakdown distribution,Z(i) is the Z-score of the i th capacitor (essentially the difference between its breakdown time and the mean measured in standard deviations),GAMMA is the Field acceleration constant,Eox is the oxide field,Ea is the activation energy of this failure mechanism,K is Boltzmann’s constant,T is the Kelvin Temperature, andT0 is a fitting constant.AT89C51RD2 / AT89C51ED2 QualPack The best fit coefficients in the regression analysis are:T0= 14.25034317 LN-secEa= 1.060043152 eVGAMMA= -3.2454227 LN-sec-cm/MVSIGMA= 0.414655753 LN-secwith an adjusted r-squared of 97.99%. The intrinsic lifetime at use conditions calculated from this regression is 56174 years.Conclusion:Using the coefficients determined above, the time to reach any cumulative percent failure level can be estimated given the stress conditions. Using 105C and 3.3 volts on 63 Angstrom N-Channel gate2 oxide, we may expect0.01% of capacitors having 6,267 square microns area with 6,174 microns of active edge to fail in about 613 years, exceeding the technology requirement of ten years.Test results :AT89C51RD2 / AT89C51ED2 QualPack 4.3.4 FLASH Characteristics4.3.4.1 Cell endurancePurpose:To evaluate the ability of memory cell to withstand high number of program/erase cycles without change of electrical characteristics.Test Parameters:Measurements have been done on lot 0R5414.Test done on 2 cells in a byte :- cell near byte select transistor, called bit0 (1st column)- cell near Vss contact, called bit 7 (8th column).Cycling is done for various programming voltages :- write : 13.5V on BL / 15.6V on select - clear : 13.5V on sense / 15.6V on select@5ms 14.5V on BL / 16.6V on select @5ms 14.5V on sense / 16.6V on select15.5V on BL / 17.6V on select 15.5V on sense / 17.6V on select16.5V on sense / 17.6V on selectAT89C51RD2 / AT89C51ED2 QualPack Conclusions:- Vt_wrt shift of 200 mV after 10k cycles- I_read decrease of 2.5 uA after 10kcycles (- 7 to 9 %)- No big difference between bit0 and bit 7 in terms of Vt or current variations Using the coefficients4.3.4.2 Cell retentionPurpose:To extrapolate cell life duration at 125°C from bake measurements at high temperature.Test parameters:Lot: 9T0930Temperature: 250°C and 200°CDuration: 92 hoursLifetime Prediction:The equation used to describe memory cell retention is:DVt (V) = A * (t[h])^m * exp (-1.05eV/kT[K])Results :Test measurements Extrapolated Life TimeConclusions :Extrapolation to 125°C - 10years = Vt loss is less than 0.8 mVAT89C51RD2 / AT89C51ED2 QualPack 4.3.4.3 Cell Read DisturbPurpose:To measure read disturb influence on 56k8 memory cell.Test parameters:Lot: 0t0348Programming: 14V on WL and sensegate @5msTemperature: 25°C and 140°CThe cell is stressed with BL voltage much higher than standard read conditions (around 6V) to accelerate disturb phenomenon : electrons from the Floating gate can move through the tunnel oxide. This charge loss is measured after stress by a Vt measurement.Test results:Conclusion:Extrapolation to 10 years lifetime give a maximum BL voltage of around 4V in read operation, which is much higher than nominal BL read voltage (~1V). So there is no sensitivity to read disturb either at room temperature or high temperature.AT89C51RD2 / AT89C51ED2 QualPack 4.3.4.4 Wafer probe Data retention measurementData retention has been verified after bake for 168 hours at 250°C on 3 wafers of a standard production lot. The results are summarized in the table below:Time to failureLot Wafer % Retention loss Failure rateextrapolation at 55°C1G4448 6 0% 3.91fit >> 10 years1G4448 8 0% 4.19fit >> 10 years1G4448 12 0% 3..96fit >> 10 yearsTotal 0% 1.34fit >> 10 years Conclusion:Data Retention measurements at wafer probe stand out high data retention capability of AT56800 products, exceeding the technology requirement of ten years.AT89C51RD2 / AT89C51ED2 QualPack 4.4 Device Reliability4.4.1 Operating Life TestingAT89C51ED2 test results are summarized in the table below.Lot Device Type Test Description Step Result CommentA01948K AT89C51ED2PLCC 44 EFR Dynamic Life Test 12h48h0/3000/300LFR Dynamic Life Test 500h1000h0/1000/1004.4.2 ESD / Latch-upAT89C51ED2 test results are summarized in the table below.Lot Device Type Test Description Step Result CommentA01948 AT89C51ED2PLCC 44 ESD-HBM Model 2000V3000V4000V5000V0/31/31/31/3Class 2 of MIL STD 883LATCH-UPOver-VoltagePower Injection5.5v50mW0/50/5Test done at 125°CClassified latch-up free4.4.3 FLASH and EEPROM Data Retention and Endurance CyclingAT89C51ED2 test results are summarized in the table below.Lot Device Type Test Description Step Result CommentA01948K AT89C51ED2PLCC 44 Data Retention 500h1000h0/500/50Program / EraseEndurance Cycling100kc 0/30 32k USER memoryProgram / EraseEndurance Cycling100kc 0/30 2k DATA memoryAT89C51RD2 / AT89C51ED2 QualPack AT56800 Program / Erase Endurance:Temperature acceleration factor calculation:AT56800 FLASH / EEPROM Reliability Calculation:Global Calculation AT56800MicrocontrollersData-Retention Test 165°c250°c0/11010000/251496For current sample sizeexpressed in device*hours,Ea = 0.7eV, CL = 60%, T = 55°:?DR= 0.29 fitEndurance Cycling 55°c 1/109850k Failure : 1 bit charge lossFor sample size expressed inequivalent cycles at 55°c, andassuming one cycle per day,Ea = 0.25eV, CL = 60%:?EC= 0.76 fitAT89C51RD2 / AT89C51ED2 QualPack4.4.4 AT89C51ED2 Operating Reliability CalculationIn the next table, it is proposed a AT89C51ED2 reliability prediction calculated at 55°c for 60% confidence level from generic test data collected over the 12 last months process monitor.Lots Device Type Test Description Step Result CommentA00648 P01709 A00988B T89C51CC01VQFP 44EFR Dynamic Life Test 48h 0/3787A01459AA01460EA01615BLFR Dynamic Life Test 1000h 0/266A01110C A01110D T89C51CC02SOIC28EFR Dynamic Life Test 48h 1/1260 1 Ipd drift caused by scratch onmetal 1A01185FA01366ELFR Dynamic Life Test 1000h 0/280A01679A A01679B T89C51RC2PLCC 44EFR Dynamic Life Test 48h 0/1856LFR Dynamic Life Test 1000h 0/100A00808A A00943E T89C51RB2PLCC 44EFR Dynamic Life Test 48h 0/300LFR Dynamic Life Test 1000h 0/100A01487Q A02179 T85C5121T89C5121EFR Dynamic Life Test 48h 0/684 SSOP24 LFR Dynamic Life Test 1000h 0/100A01435H A01435K AT89C5114SOIC20EFR Dynamic Life Test 48h 0/1887A02293C LFR Dynamic Life Test 1000h 0/200A00960C A01808A AT89C51SND1AT83C51SND1EFR Dynamic Life Test 48h 1/550 Consumption hot spot in DCLKinput bufferA01914J VQFP 80 LFR Dynamic Life Test 1000h 0/170A01584A AT89C5131VQFP64EFR Dynamic Life Test 48h 0/350LFR Dynamic Life Test 1000h 0/100Global EFR Dynamic Life Test 48h 2/10674 187 ppmLFR Dynamic Life Test - 0/1316 4.4 fitAT89C51RD2 / AT89C51ED2 QualPack4.5 AT89C51ED2 Packaging reliabilityIn this section are presented the packaging qualification measurements carried out in PLCC 44.Lots Device Type Test Description Step Result CommentA01948K AT89C51ED2PLCC 44 Humidity 85/85 postPreconditioning level 1500h 0/500/50Thermal Cycles postPreconditioning L1500c1000c0/500/50Autoclave post thermalshocks and Precond. L196h 0/50A01679C AT89C51RC2PLCC44 Preconditioning level 1 SAMVisualElect.0/110/500/50 Thermal Cycles postPreconditioning L1500c1000c0/500/50Humidity 85/85 postPreconditioning level 1500h 0/500/50Autoclave post thermalshocks and Precond. L196h 0/50High TemperatureStorage500h1000h0/500/50 Marking permanency Visual 0/54.6 AT89C51ED2 Qualification statusAtmel digital 0.35 um wafer process is qualified since 1999, October.Derived from this technology, AT89C51RD2 / AT89C51ED2 have passed successfully Reliability Testing. Full qualification has been pronounced in June 2003.All package pass Level 1 of Moisture Sensitivity Ranking as per JESD 20B. Therefore, Dry Packing is not mandatory.AT89C51RD2 / AT89C51ED2 QualPack5 Environmental InformationAtmel Nantes Environmental Policy aims are :- Reducing the use of harmful chemicals in its processes- Reducing the content of harmful materials in its products- Using re-usable materials wherever possible- Reducing the energy content of its productsAs part of that plan, Ozone Depleting Chemicals are being replaced either by Atmel Nantes or its sub-contractors. Atmel Nantes site is ISO14001 certified since May 2000.AT89C51RD2 / AT89C51ED2 QualPack 6 Other Data6.1 ISO / TS16949 : 2002 CertificateAT89C51RD2 / AT89C51ED2 QualPack6.2 Data Book ReferenceThe data sheet is available upon request to sales representative or upon direct access on Atmel web site:/Address ReferencesAll inquiries relating to this document should be addressed to the following:Atmel NantesBP7060244306 Nantes Cedex 3FranceTelephone (33) 2 40 18 18 18Telefax (33) 2 40 18 19 00Or direct contactPascal LECUYERTelephone (33) 2 40 18 17 73Telefax (33) 2 40 18 19 466.3 Revision HistoryIssue Modification Notice Application Date0 Initial Product Evaluation 2003 JulyRemarks:The information given in this document is believed to be accurate and reliable. However, no responsibility is assumed by Atmel for its use. No specific guarantee or warranty is implied or given by this data unless agreed in writing elsewhere.Atmel reserves the right to update or modify this information without notification, at any time, in the interest of providing the latest information.Parts of this publication may be reproduced without special permission on the condition that our author and source are quoted and that two copies of such extracts are placed at our disposal after publication. Before use of such reproduced material the user should check that the information is current.Written permission must be obtained from the publisher for complete reprints or translations。
FNR氧化锌直插压敏电阻器规格书
FEATURESZINC OXIDE VARISTORAre non-linear resistors utilize a semiconductor electronic ceramic element mainly composed of Zinc Oxide and its resistors change as a function of the applied voltage .It s called Varistor or Transient surge absorbers(18V~1.8KV)(25ns)(2000A/cm 2)Widely voltage range 18V~1.8KVFast response to the rapidly increase Voltage(25ns)Excellent non-linearity voltage Symmetric V-l characteristicsGreat withstanding surge current (2000A/cm )No follow-on current Long life2HOW TOORDERCHARACTERISTICSpre breakdownregionnomal operatingregion upturn regionFig1Voltage Current CharacteristicCurrent(A)V O L T A G E (V )1031021010-810-710-610-510-410-310-210-111010*********5LEAD STYLEF Inside Crimped shortQUANTITY&MEASUREFig.AFig.BFig.CFig.DFig.EFig.FZINC OXIDE VARISTORT Thickness (max)(Unit:mm)DIMENSION40K48521811.50.05TAPING SPECIFICATIONUnit:mm1.0ZINC OXIDE VARISTORK5SERIES SPECIFIATION5SeriesK7060410756983020155040200901008015030040060050030906040508070200150100400300800900700Current(A)Current(A)V-I CurveImpluse Lifetime Ratings(2time:5minutes internalup to 10times 2minutes internal up to 10times 10seconds internal)6V o l t a g e (V )Impulse width u s)Impulse width u s)ZINC OXIDE VARISTOR7K SERIES SPECIFIATION FNR-07K681420561680(612~748)7KSeriesImpulse width u s)V-I CurveCurrent(A)Impluse Lifetime Ratings(2time:5minutes internalZINC OXIDE VARISTORFNR-10K11210K SERIES SPECIFIATION6808951100(990~1210)10KSeriesImpluse Lifetime RatingsV-I Curvet ((I m p u l s e w i d t h (s )V o l t a g e (V )ZINC OXIDE VARISTORFNR-14K18214K SERIES SPECIFIATION100014651800(1620~1980)ZINC OXIDE VARISTOR14K Series)V(egatloVI m p u l s e w i d t h(s)FNR-20K18220K SERIES SPECIFIATION100014651800(1620~1980)20KSeriesImpluse Lifetime RatingsV-I CurveI m p u l s e w i d t h (s )V o l t a g e (V )C u r r e n t ()ZINC OXIDE VARISTOR25K SERIES SPECIFIATION FNR-25K182100014651800(1620~1980)25KSeriesV-I CurveV o l t a g e (V )I m p u l s e w i d t h (s )ZINC OXIDE VARISTORFNR-32K1821000146532K SERIES SPECIFIATION1800(1620~1980)32KSeriesV-I CurveV o l t a g e (V )C u r r e n t ()I m p u l s e w i d t h (s )V o l t a g e (V )C u r r e n t ()I m p u l s e w i d t h (s )ZINC OXIDE VARISTOR40K SERIES SPECIFIATION FNR-40K182100014651800(1620~1980)40KSeriesV-I CurveV o l t a g e (V)C u r r e n t ()I m p u l s e w i d t h (s )V o l t a g e (V )ZINC OXIDE VARISTOR()HOW TO SELECT A VARISTOR(ONL Y REFERENCE)A:V=a v/b c1mAa 1.2vb0.85c0.9A:Varistor voltageVaristor Voltage should be more than the operating voltage in over protective circuit,The formula is shown as the following.V=a v/b c1mAa-power Voltage ripple coefficient usually1.2v-DC Voltage(significant value only AC power)b-Tolerance usually take0.85c-Ageing coefficient usually take0.9B:50%B:Withstanding surge currentIn general,withstanding surge current is max,Pulse current value which determined by test conditions such as wave-shape,amplitude and intermal time,when the amplitude decrease to50%of the initial, it should be increased to2times of the initial in order to keep the life longer,the surge current which is sbsorbed by the varistor should be less than max.withstanding surge currentZINC OXIDE VARISTOR APPLICATIONSFNR-05K391FNR-07K391FNR10K391(SELECT OF FUSE in conformity to FNR Varistor) If conform with diameter):If conform with Max Peak current):Fuse ratingZINC OXIDE VARISTORELECTRICAL PERFORMANCE TEST:5~35:45%~85%Standardl Test Conditions:Tempreture:5~35,humidity:45%~85%(Machinecharacteristic test)ZINC OXIDE VARISTOR。
日本荏原--离心泵基础知识
672-N4D122501 REVO2005111.11 (2)2 (3)1.21 (4)2 (5)1.31 (7)2“” (7)3“” (8)4 (8)5 (9)22.11 (10)2 (11)3.....................................................................................................12-162.21..................................................................................................17-182.............................................................19-202.31...................................................................................21-222.41 (23)2 (24)3.............................................................................................................25-264 (26)5 (27)2.51..................................................................................................28-312.............................................................................................................32-333.............................................................................................................34-354........................................................................36-371. 11“”“”“”“”“”“”122“”3310m106132O 001011021031039-1039-20480510560630910930951071151~2119120-1~6120-6120-7120-8123123-02124131140-01,02160193-1,2,3205206207245800“”“E F GH……”“”13Cr SUS403SUS420J118-8SUS304S35C••••“”“”“”•[]•••[]1. 31•m3/min l/min•Q-H••P•Hmç%PKw2“”••FS2F FS2G E F G…L3“”••““33•4••“”5•2Q2Q•2Q2Q’•2H2H•2H2H’2 2. 1 1 1FSA 50 Hz 1500 min-1 500 l/min 30 m 80 7.5kW 1 2 3 4 5 6 7652 4 50Hz 1500min-180 65 FS 4KA57.5 _ 10 _30%ReNPSH/2 3MkW FSAmm EVMmm50HzkWkW DSmm50HzkW_11_3• • JIS DIM×mm1 2 • JIS • m3/min Capacity30mm 75mm m3/min l /min l /sec m3/h 1m3 =1000l 1h =60min 1min =60sec 1t =1000kg =1000l 4OC m mAg kgf/cm2 kPa MPa 1kg• •“ 1 2 2 ”• • •m “1kg=10m” Total Head•4OC=1kgf/cm2 =10m =0.1MPa =100kPa• Speed N=120f/ N= 50Hz 4 60Hz 2 • 2 min-1 f Hz Pmin-1 rpmN=120x50/4=1500rpm-1 N=120x60/2=3600rpm-1_12_•kW W Power Out Put 0.75kW” “ “1 = ”S=0.163 x P=1~1.2S S P Q Hx Q x H/kW kg/l m3/min m[]•=1.0•“”3 1 • 50Hz 60Hz “ ” Hz2 • 2 3 3 • 50Hz 200V 220V 220V/ 380V “ ” Voltage Single-phase Three-phase_13_• [] 1/ ODP O:Open D:Drip P:Proof2 TEFC T:Totaly E:Enclosed F:Fan C:Cooled3/45[ 1]2_14_• • M&E • 1M&E•32Star Delta• • •• 7kg 10kgJIS10kg JIS10kg••••_15_Y YY• • 11kW 6••••50•• 100mm60 JIS 100mm• BC• •• “ ” 5%•• 7kg 10kg JIS 10kg JIS 10kg•_16_2. 2 1“”[]FSAIBL_17_[]3ME-LINE_18_2 “ ” 4FSAIBLE-LINEPCD-1 80 4 65 1000l/m 20m 5.5kW 0.2MPa11 FSA 2 3 4 5 6 4 P 0.2MPa 1000l/m 20m 3 380V 1000l/m 20m 3 380V_19_2450Hz1500min-1310080FS4JA55.5•0.7MPaIBL2IBL42P4PFSA2FSA42. 31MS“”MDPAFSAP-1300l/m 60m 7.5kW 3380V11234567EVM 50Hz 300l/m 60m 3380V5.5kW50Hz 300l/m 60m 3380V 7.5kW250Hz3000min-13EVM 16 6F/5.53M EVM2. 41“”40%“”“”10%DS70%DVS2100%DLDSDVSDLDSDVSDLDLDSDVSDSDVSDL10%70%60%70%…•DP-1100l/m 6m0.25kW1220V1234567DDSDSA50Hz100l/m6m3380V50Hz100l/m6m3380V12340DSA5.25A•424EPJ51221112JA12221“”“”“ON”“OFF”FS PS[ ]“ “ ””“”“ ”2[]FS PS_30_13101. 2.12 3_31_2F3100BNF3100BN1 2 3 41 2 3 3m”PB“PB PB3m”“PBF1300B1F1300B1 1 2 3 41 2 3 4 10l/m_32_③定压供水方式•供水机组F1000BD 型F1000BD 型(日本产品示例11- 特点1 使用流量开关控制，供水的压力变动很小。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
Edition 4/04.2001
1
元器件交易网
Board Mountable
Input
Input voltage 5 IMX, continuous range, 5 V 20 IMX, continuous range, 20 V 40 IMX, continuous range, 40 V 70 IMX, continuous range, 70 V
–40...71°C –40...100°C 93% >349'000 h
Options
Extended temperature range Alternative pinout SMD version Open frame version –40...85°C, ambient, operating with pins -8 K M Z
[V DC] [mA] [V DC] [mA] [V DC] 3.3 900 8.4...36 3.3 900 16.8...75 3.3 900 40...121 5 700 4.7...16.8 5 700 8.4...36 5 700 16.8...75 5 700 40...121 12 340 4.7...16.8 12 340 8.4...36 12 340 16.8...75 12 340 40...121 15 280 4.7...16.8 15 280 8.4...36 15 280 16.8...75 15 280 40...121 +5 350 –5 350 8.4...36 +5 350 –5 350 16.8...75 +5 350 –5 350 40...121 +12 170 –12 170 8.4...36 +12 170 –12 170 16.8...75 +15 140 –15 140 8.4...36 +15 140 –15 140 16.8...75 +24 80 –24 80 8.4...36 +24 80 –24 80 16.8...75 1 For minimum order quantity and lead time contact Power-One.
±1% Uo nom 10% lo nom ±1% Uo nom ±3% Uo nom ±3% Uo nom max. 2% Uo nom up to typ. 83%
Control and protection
Input protection Overload protection No-load protection suppressor diode (except 5 IMX 4)
Ui nom, 50% lo nom recommended Ui min...Ui max , 50% lo nom Ui nom, 10...100% lo nom , main output tracking output Ui nom, 10...100% lo nom , peak-peak, total Ui nom, lo nom
24
Edition 4/04.2001
8.5 (0.33")
20 (0.79")
13
24
3
元器件交易网
Board Mountable
Standard including option Z
Pin 2 3 10 11 14 16 22 23 Single output units Vi– Vi– n.c. Vo+ Vo– Vi+ Vi+ Dual output units Vi– Vi– Vo– Vo+ Go Vi+ Vi+
Solder lands for option M
11 x 2.54 (0.1")
5.6 (0.22")
26.6 (1.05")
12
1
2.5 (01")
0.85 (0.03") 13 24
S11052
2 (0.08")
Edition 4/04.2001
4
Environmental
Operating ambient temperature Storage temperature Relative humidity MTBF
Ui nom, lo nom
non operational non condensing Gf 40°C (MIL-HDBK-217F-N2)
IMX 4 Series
4.7...16.8 V DC 8.4...36 V DC 18...75 V DC 40...121 V DC
Output
Output voltage setting accuracy Minimum load Line regulation Load regulation Output voltage switching noise Effic0 (0.79")
24 Bottom view 1
Bottom view 12 1
Measuring point of case temperature TC
3 (0.12")
S90004
S09042
min. 3 (0.12")
8.5 (0.33")
0.5 (0.02")
Accessories
DIN and chassis mounting kit
Edition 4/04.2001
2
元器件交易网
IMX 4 Series
Mechanical data
Tolerances ±0.3 mm (0.012") unless otherwise indicated.
IMX 4 Series
Option K
Pin 1 2 10 11 12 13 15 24 Single output units Vi+ n.c. Vo– Vo+ Vi– Dual output units Vi+ Go Go Vo– Vo+ Vi–
SMD pinout (option M)
Pin 2 3 10 11 12 13 14 15 16 22 23 Single output units Dual output units Vi– Vi– Vi– Vi– n.c. Go Vo– Vo– Vo– Vo– Vo+ Vo– Vo+ Vo+ Vo+ Vo+ Vo– Go Vi+ Vi+ Vi+ Vi+
元器件交易网
IMX 4 Series
4 Watt DC-DC Converters
Input voltage ranges up to 121 V DC 1 or 2 outputs up to 48 V DC Up to 2000 V DC I/O electric strength test
0.5 (0.02")
Option M
11 x 2.54 (0.1")
S09043
25 (0.98")
13 Bottom view 12 33 (1.3")
1 1
Measuring point of case temperature TC
S09043
0.5 (0.02")
9 (0.35")
20 (0.79")
• Short circuit protection • DIL 24 Case with 8.5 mm profile
Selection chart
Output 1 Output 2 Input voltage Type Options1
Uo nom
Io nom
Uo nom
Io nom
Ui
20 IMX 4-03-9 40 IMX 4-03-9 70 IMX 4-03-9 5 IMX 4-05-9 20 IMX 4-05-9 40 IMX 4-05-9 70 IMX 4-05-9 5 IMX 4-12-9 20 IMX 4-12-9 40 IMX 4-12-9 70 IMX 4-12-9 5 IMX 4-15-9 20 IMX 4-15-9 40 IMX 4-15-9 70 IMX 4-15-9 20 IMX 4-0505-9 40 IMX 4-0505-9 70 IMX 4-0505-9 20 IMX 4-1212-9 40 IMX 4-1212-9 20 IMX 4-1515-9 40 IMX 4-1515-9 20 IMX 4-2424-9 40 IMX 4-2424-9 -8, M, Z -8, M, Z -8, L, Z -8, Z -8, M, K, Z -8, M, K, Z -8, Z -8, Z -8, M, K, Z -8, M, K, Z -8, Z -8, Z -8, M, K, Z -8, M, K, Z -8, Z -8, M, K, Z -8, M, K, Z -8, Z -8, M, K, Z -8, M, K, Z -8, M, K, Z -8, M, K, Z -8, M, Z -8, M, Z
4 Watt DC-DC Converters
European Projection
Standard and alternative pinout
33 (1.3") 11 x 2.54 (0.1")
S09042
Option Z
31 (1.22") 11 x 2.54 (0.1")
15.24 (0.6")
Ui min...Ui max , fully protected, hiccup mode