自动化专业英语考试

relatively small 相对较小的 instigate v.激发，产生 is capable of 具有...的能力 power 功率 参考译文 本电路的特色是相对小的基极电流能控制和激发出一个比它大 得多的集电极电流(或更恰当地说，一个小的输入功率能够产生一个 比它大得多的输出功率)。换句话说，晶体管的作用相当于一个放大 器。 原文[9]
参考译文 （注意：本定义仅适用于发射极是两个电路的公共端时——被称
为共发射极连接。）这是晶体管最常见的连接方式，但是，当然也存 在其它两种可选的连接方法—— 共基极连接和共集电极连接。但是 在每一种情况下晶体管的工作原理是相同的。 原文[8]
The particular advantage offered by this circuits is that a relatively small base current can control and instigate a very much larger collector current (or, more correctly, a small input power is capable of producing a much larger output power). In other words, the transistor works as an amplifier. 注释
注释
lead
引脚，导线
operate 操作，运行
参考译文
因此晶体管有三个区域，并从这三个区域引出三个管脚。要使工 作电路运行，晶体管需与两个外部电压或极性连接。其中一个外部电 压工作方式类似于二极管。 原文[5]
A transistor will, in fact, work as a diode by using just this connection and forgetting about the top half. An example is the substitution of a transistor for a diode as the detector in a simple radio. It will work just as well as a diode as it is working as a diode in this case. 注释
“P” and “N” zones), it is referred to as a bipolar device, or bipolar
transistor.
注释
configuration 结构，构造
polarity 极性
Байду номын сангаас
i.e. =that is 即
is referred to as 被称作是...
put very simply 简单的说 semiconductor 半导体 dope v. 掺入，掺杂 predominance 优势，占主导地位 predominance of electrons 占主导地位的电子 mobile negative charges 自由电子 hole 洞，空穴 crystal 晶体，结晶体 germanium 锗 silicon 硅 treat with 用...处理
the transistor. This is called the collector circuit or output circuit. 注释
bias voltage supply 偏置电压源 encompass 包围，环绕 collector voltage supply 集电极电压源 all three elements of the transistor 晶体管的三个区 参考译文 因此，当晶体管外加电压接连正确（图 1-2B-3）后工作时，实际 上存在两个独立的“工作”电路。一个是由偏置电压源、发射极和基 极形成的回路，它被称为基极电路或输入电路；第二个是由集电极电 压源和晶体管的三个区共同形成的电路，它被称为集电极电路或输出 电路。 原文[7] (Note: this description applies only when the emitter connection is common to both circuits---known as common emitter configuration.) This is the most widely used way of connecting transistors, but there are of course, two other alternative configurations---common base and common collector. But, the same principles apply in the working of the transistor in each case. 注释 common emitter configuration 共射级构造（结构） alternative a. 可选的
With this mode of working the base-emitter circuit is the input side; and the emitter through base to collector circuit the output side. Although these have a common path through base and emitter, the two circuits are effectively separated by the fact that as far as polarity of the base circuit is concerned, the base and upper half of the transistor are connected as a reverse biased diode. Hence there is no current flow from the base circuit into the collector circuit. 注释
substitution 代替，替换 detector 检测装置，检波器 in this case 在这种情况下 参考译文 事实上，保留这个外部电压并去掉上半部分，晶体管将会像二极 管一样工作。例如在简易收音机中用晶体管代替二极管作为检波器。 在这种情况下，其所起的作用和二极管所起的作用一模一样。 原文[6] Effectively, therefore, there are two separate “working” circuits when a transistor is working with correctly connected polarities. One is the loop formed by the bias voltage supply encompassing the emitter and base. This is called the base circuit or input circuit. The second is the circuit formed by the collector voltage supply and all three elements of
Unit 2 B: Transistors
晶体管
原文[1] Put very simply a semiconductor material is one which can be
“doped” to produce a predominance of electrons or mobile negative charges (N-type); or “holes” or positive charges (P-type). A single crystal of germanium or silicon treated with both N-type dope and P-type dope forms a semiconductor diode, with the working characteristics described. 注释
bipolar a. 双向的
参考译文
PNP 或 NPN (图 1-2B-1)这两种结构显然是可行的。PNP 或 NPN
被用于描述晶体管的两个基本类型。因为晶体管包含两个不同极性的
区域（例如“P”区和“N”区），所以晶体管被叫作双向器件，或双
向晶体管。
原文[4]
A transistor thus has three elements with three leads connecting to
form 形成 semiconductor diode 半导体二极管 参考译文 简单地说，半导体是这样一种物质，它能够通过“掺杂”来产生 多余的电子，又称自由电子（N 型）；或者产生“空穴”，又称正电荷 （P 型）。由 N 型掺杂和 P 型掺杂处理的锗或硅的单晶体可形成半导 体二极管，它具有我们描述过的工作特性。 原文[2] Transistors are formed in a similar way but like two diodes back-to-back with a common middle layer doped in the opposite way to the two end layers, thus the middle layer is much thinner than the two end layers or zones. 注释 but 在这里为连词，翻译时没有含义 参考译文 晶体管以类似的方式形成，就像带有公共中间层、背靠背的两个 二极管，公共中间层是以对等的方式向两个边缘层渗入而得，因此中 间层比两个边缘层或边缘区要薄的多。 原文[3] Two configurations are obviously possible, PNP or NPN (Fig.1-2B-1). These descriptions are used to describe the two basic types of transistors. Because a transistor contains elements with two different polarities (i.e.,