DS90LV049HMTX资料
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DS90LV049H
High Temperature 3V LVDS Dual Line Driver and Receiver Pair
General Description
The DS90LV049H is a dual CMOS flow-through differential line driver-receiver pair designed for applications requiring ultra low power dissipation,exceptional noise immunity,and high data throughput.The device is designed to support data rates in excess of 400Mbps utilizing Low Voltage Differential Signaling (LVDS)technology.
The DS90LV049H drivers accept LVTTL/LVCMOS signals and translate them to LVDS signals.The receivers accept LVDS signals and translate them to 3V CMOS signals.The LVDS input buffers have internal failsafe biasing that places the outputs to a known H (high)state for floating receiver inputs.In addition,the DS90LV049H supports a TRI-STATE function for a low idle power state when the device is not in use.
The EN and EN inputs are ANDed together and control the TRI-STATE outputs.The enables are common to all four gates.
Features
n High Temperature +125˚C Operating Range n Up to 400Mbps switching rates
n Flow-through pinout simplifies PCB layout n 50ps typical driver channel-to-channel skew n 50ps typical receiver channel-to-channel skew n 3.3V single power supply design n TRI-STATE output control
n Internal fail-safe biasing of receiver inputs n Low power dissipation (70mW at 3.3V static)n High impedance on LVDS outputs on power down n Conforms to TIA/EIA-644-A LVDS Standard n
Available in low profile 16pin TSSOP package
Connection Diagram
Dual-In-Line
20161701
Order Number DS90LV049HMT
Order Number DS90LV049HMTX (Tape and Reel)
See NS Package Number MTC16
Functional Diagram
20161702
Truth Table
EN EN LVDS Out LVCMOS Out
L or Open
L or Open OFF OFF H L or Open
ON ON L or Open
H OFF OFF H
H
OFF
OFF
September 2005
DS90LV049H High Temperature 3V LVDS Dual Line Driver and Receiver Pair
©2005National Semiconductor Corporation
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.Supply Voltage (V DD )−0.3V to +4V
LVCMOS Input Voltage (D IN )−0.3V to (V DD +0.3V)
LVDS Input Voltage (R IN+,R IN-)−0.3V to +3.9V
Enable Input Voltage (EN,EN)−0.3V to (V DD +0.3V)LVCMOS Output Voltage (R OUT )−0.3V to (V DD +0.3V)
LVDS Output Voltage (D OUT+,D OUT-)
−0.3V to +3.9V
LVCMOS Output Short Circuit Current (R OUT )
100mA
LVDS Output Short Circuit Current (D OUT+,D OUT−)24mA LVDS Output Short Circuit Current Duration(D OUT+,D OUT−)Continuous Storage Temperature Range
−65˚C to +150˚C
Lead Temperature Range Soldering (4sec.)
+260˚C Maximum Junction Temperature
+150˚C
Maximum Package Power Dissipation @+25˚C MTC Package 866mW
Derate MTC Package 6.9mW/˚C above +25˚C
ESD Rating
(HBM,1.5k Ω,100pF)≥7kV (MM,0Ω,200pF)
≥250V Recommended Operating Conditions
Min
Typ Max Units Supply Voltage (V DD )+3.0
+3.3
+3.6
V
Operating Free Air Temperature (T A )
−40
+25
+125
˚C
Electrical Characteristics
Over supply voltage and operating temperature ranges,unless otherwise specified.(Notes 2,4,6)Symbol Parameter
Conditions
Pin
Min Typ
Max Units LVCMOS Input DC Specifications (Driver Inputs,ENABLE Pins)
V IH Input High Voltage D IN EN EN
2.0V DD V V IL Input Low Voltage GND 0.8V I IH Input High Current V IN =V DD −101+10µA I IL Input Low Current V IN =GND −10−0.1+10
µA V CL Input Clamp Voltage I CL =−18mA
−1.5−0.6V LVDS Output DC Specifications (Driver Outputs)
|V OD |Differential Output Voltage R L =100Ω(Figure 1)250
350450mV ∆V OD Change in Magnitude of V OD for Complementary Output States 1
35|mV|V OS Offset Voltage
1.125
1.23 1.375V ∆V OS Change in Magnitude of V OS for Complementary Output States 125|mV|I OS
Output Short Circuit Current (Note 14)
ENABLED,
D IN =V DD ,D OUT+=0V or D IN =GND,D OUT−=0V D OUT−D OUT+
−5.8
−9.0
mA
I OSD Differential Output Short Circuit Current (Note 14)ENABLED,V OD =0V −5.8−9.0mA I OFF Power-off Leakage V OUT =0V or 3.6V V DD =0V or Open −20±1+20µA I OZ
Output TRI-STATE Current
EN =0V and EN =V DD V OUT =0V or V DD
−10
±1
+10
µA
LVDS Input DC Specifications (Receiver Inputs)V TH Differential Input High Threshold V CM =1.2V,0.05V,2.35V
−1535
mV V TL Differential Input Low Threshold R IN+R IN--100
−15
mV V CMR
Common-Mode Voltage Range
V ID =100mV,V DD =3.3V 0.053V I IN
Input Current
V DD =3.6V
V IN =0V or 2.8V −12±4+12µA V DD =0V
V IN =0V or 2.8V or 3.6V
−10±1
+10
µA
D S 90L V 049H
2