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场效应管及三级管型号大全

场效应管及三级管型号大全1.5 场效应晶体管与三极管基础知识根据三极管的原理开发出的新一代放大元件，有3个极性，栅极，漏极，源极，它的特点是栅极的内阻极高，采用二氧化硅材料的可以达到几百兆欧，属于电压控制型器件概念:场效应晶体管（Field Effect Transistor缩写(FET)）简称场效应管.由多数载流子参与导电,也称为单极型晶体管.它属于电压控制型半导体器件.特点:具有输入电阻高（108～109Ω）、噪声小、功耗低、动态范围大、易于集成、没有二次击穿现象、安全工作区域宽等优点,现已成为双极型晶体管和功率晶体管的强大竞争者.场效应管的作用1、场效应管可应用于放大。

由于场效应管放大器的输入阻抗很高，因此耦合电容可以容量较小，不必使用电解电容器。

2、场效应管很高的输入阻抗非常适合作阻抗变换。

常用于多级放大器的输入级作阻抗变换。

3、场效应管可以用作可变电阻。

4、场效应管可以方便地用作恒流源。

5、场效应管可以用作电子开关。

场效应管的测试1、结型场效应管的管脚识别：场效应管的栅极相当于晶体管的基极，源极和漏极分别对应于晶体管的发射极和集电极。

将万用表置于R×1k档，用两表笔分别测量每两个管脚间的正、反向电阻。

当某两个管脚间的正、反向电阻相等，均为数KΩ时，则这两个管脚为漏极D和源极S（可互换），余下的一个管脚即为栅极G。

对于有4个管脚的结型场效应管，另外一极是屏蔽极（使用中接地）。

2、判定栅极用万用表黑表笔碰触管子的一个电极，红表笔分别碰触另外两个电极。

若两次测出的阻值都很小，说明均是正向电阻，该管属于N沟道场效应管，黑表笔接的也是栅极。

制造工艺决定了场效应管的源极和漏极是对称的，可以互换使用，并不影响电路的正常工作，所以不必加以区分。

源极与漏极间的电阻约为几千欧。

注意不能用此法判定绝缘栅型场效应管的栅极。

因为这种管子的输入电阻极高，栅源间的极间电容又很小，测量时只要有少量的电荷，就可在极间电容上形成很高的电压，容易将管子损坏。

IRF系列高压MOS管

高压MOS管----IRF系列学习杂记2008-01-29 15:04:28 阅读2856 评论2 字号：大中小订阅IRF024 N-场效应60 17 60 TO-204AAIRF034 N-场效应60 30 90 TO-204AEIRF035 N-场效应60 25 90 TO-204AEIRF044 N-场效应60 30 150 TO-204AEIRF045 N-场效应60 30 150 TO-204AEIRF054 N-场效应60 30 180 TO-204AAIRF120 N-场效应100 8.0 40 TO-3IRF121 N-场效应60 8.0 40 TO-3IRF122 N-场效应100 7.0 40 TO-3IRF123 N-场效应60 7.0 40 TO-3IRF130 100V 14A 79W N-场效应IRF130(铁)NMOS GDS 100V14A79W75/45nS0.16 功放开关IRF131 N-场效应60V14A 75W TO-3IRF132 N-场效应100V12A75W TO-3IRF133 N-场效应60V12A 75W TO-3IRF140 N-场效应100V 27A 125W TO-204AEIRF141 N-场效应60V 27A 125W TO-204AEIRF142 N-场效应100V24A 125W TO-204AEIRF143 N-场效应60V 24A 125W TO-204AEIRF150 N-场效应100V 40A 150W TO-204AEIRF151 N-场效应60V 40A 150W TO-204AEIRF152 N-场效应100V 33A 150W TO-204AEIRF153 N-场效应60V33A 150W TO-204AEIRF15N65 650V 5A 80W MOSIRF16N65 650V 6A 80W MOSIRF220 N-场效应200V 5.0A 40W TO-3IRF221 N-场效应150V 5.0A 40W TO-3IRF223 N-场效应150V 4.0A 40W TO-3IRF224 N-场效应250V3.8A 40W TO-204AAIRF225 N-场效应250V 3.3A 40W TO-204AAIRF230 N-场效应200V 9.0A 75W TO-3IRF230(铁)NMOS GDS 200V9A75W50/40nS0.4 功放开关IRF231 N-场效应150V 9.0A 75W TO-3IRF232 N-场效应200V 8.0A 75W TO-3IRF233 N-场效应150V 8.0A 75W TO-3IRF234 N-场效应250V 8.1A 75W TO-204AAIRF235 N-场效应250V 6.5A 75W TO-204AAIRF240 N-场效应200V 18A 125W TO-204AEIRF241 N-场效应150V 18A 125W TO-204AEIRF242 N-场效应200V 16A 125W TO-204AEIRF243 N-场效应150V 16A 125W TO-204AEIRF244 N-场效应250V 14A 125W TO-204AAIRF245 N-场效应250V 13A 125W TO-204AAIRF250 N-场效应200V 30A 150W TO-204AEIRF251 N-场效应150V 30A 150W TO-204AEIRF252 N-场效应200V 25A 150W TO-204AEIRF253 N-场效应150V 25A 150W TO-204AEIRF254 N-场效应250V 22A 150W TO-204AEIRF255 N-场效应250V 20A 150W TO-204AEIRF2807 70V 78A 180W MOSIRF320 N-场效应400V 3.0A 40W TO-3IRF3205 55V 110A 200W MOSIRF321 N-场效应350V 3.0A 40W TO-3IRF322 N-场效应400V 2.5A 40W TO-3IRF323 N-场效应350V 2.5A 40W TO-3IRF330 N-场效应400V 5.5A 75W TO-3IRF332 N-场效应400V 4.5A 75W TO-3IRF333 N-场效应350V 4.5A 75W TO-3IRF340 N-场效应400V 10A 125W TO-3IRF341 N-场效应350V 10A 125W TO-3IRF342 N-场效应400V 8.0A 125W TO-3IRF343 N-场效应350V 8.0A 125W TO-3IRF350 N-场效应400V 15A 150W TO-3IRF351 N-场效应350V 15A 150W TO-3IRF352 N-场效应400V 13A 150W TO-3IRF353 N-场效应350V 13A 150W TO-3IRF360 N-场效应400V 25A 300W TO-204AEIRF362 N-场效应400V 22A 300W TO-204AEIRF3710 100V 46A 150W MOSIRF420 N-场效应500V 2.5A 50W TO-3IRF421 N-场效应450V 2.5A 50W TO-3IRF422 N-场效应500V 2.0A 50W TO-3IRF423 N-场效应450V 2.0A 50W TO-3IRF430 N-场效应500V 4.5A 75W TO-3IRF431 N-场效应450V 4.5A 75W TO-3IRF432 N-场效应500V 4.0A 75W TO-3IRF433 N-场效应450V 4.0A 75W TO-3IRF440 N-场效应500V 8.0A 125W TO-3IRF440(铁)NMOS GDS 500V8A125W35/30nS0.85 功放开关IRF441 N-场效应450V 8.0A 125W TO-3IRF442 N-场效应500V 7.0A 125W TO-3IRF443 N-场效应450V 7.0A 125W TO-3IRF448 N-场效应500V 9.6A 130W TO-204AAIRF449 N-场效应500V 8.6A 130W TO-204AAIRF450 N-场效应500V 13A 150W TO-3IRF450(铁)NMOS GDS 500V13A125W66/60nS0.4 功放开关IRF451 N-场效应450V 13A 150W TO-3IRF452 N-场效应500V 12A 150W TO-3IRF453 N-场效应450V 12A 150W TO-3IRF460 N-场效应500V 21A 300W TO-204AEIRF460(铁)NMOS GDS 500V 21AW66/60nS0.4 功放开关IRF462 N-场效应500V 19A 300W TO-204AEIRF48 N-场效应60V50A190W TO-220ABIRF510 N-场效应100V 5.6A 43W TO-220ABIRF511 N-场效应80V 5.6A 43W TO-220ABIRF512 N-场效应100V 4.9A 43W TO-220ABIRF513 N-场效应80V 4.9A 43W TO-220ABIRF520 N-场效应100V 9.2A 60W TO-220ABIRF521 N-场效应80V 9.2A 60WTO-220ABIRF522 N-场效应100V 8A 60W TO-220ABIRF523 N-场效应80V 8A 60W TO-220ABIRF530 N-场效应100V 14A 79W TO-220ABIRF530 N-FET100V14A79W 51/36ns0.18ohmIRF530 NMOS GDS 100V14A79W51/36nS0.18 功放开关IRF531 N-场效应80V 14A 79W TO-220ABIRF532 N-场效应100V 12A 79W TO-220ABIRF533 N-场效应80V 12A 79W TO-220ABIRF540 NMOS+D GDS 100V28A150W110/75nS0.077 功放开关IRF540A NMOS GDS 100V28A107W Id m=110A/0.052Ω 功放开关IRF541 NMOS GDS 80V28A150W110/75nS0.077 功放开关IRF542 N-场效应100V 25A 150W TO-220ABIRF543 N-场效应80V 25A 150W TO-220ABIRF610 NMOS GDS 200V3.3A43W26/13nS1.5 功放开关IRF611 N-场效应150V 3.3A 43W TO-220ABIRF612 N-场效应200V 2.6A 43W TO-220ABIRF614 N-场效应250V 2.0A 20W TO-220ABIRF615 N-场效应250V 1.6A 20W TO-220ABIRF620 N-场效应200V 5A 40W TO-220ABIRF621 N-场效应150V 5A 40W TO-220ABIRF622 N-场效应200V 4A 40W TO-220ABIRF623 N-场效应150V 4A 40W TO-220ABIRF624 N-场效应250V 3.8A 40W TO-220ABIRF625 N-场效应250V 3.3A 40W TO-220ABIRF630 NMOS GDS 200V9A75W50/40nS0.4 功放开关IRF631 N-场效应150V 9A 75W TO-220ABIRF632 N-场效应200V 8A 75W TO-220ABIRF633 N-场效应150V 8A 75W TO-220ABIRF634 N-场效应250V 8.1A 75W TO-220ABIRF635 N-场效应250V 6.5A 75W TO-220ABIRF640 N-FET GDS 200V18A125W 77/54ns0.18ohm功放开关IRF641 N-场效应150V 18A 125W TO-220ABIRF642 N-场效应200V 16A 125W TO-220ABIRF643 N-场效应150V 16A 125W TO-220ABIRF644 N-场效应250V 14A 125W TO-220ABIRF645 N-场效应250V 13A 125W TO-220ABIRF710 N-场效应400V 2.0A 36W TO-220ABIRF711 N-场效应350V 2.0A 36W TO-220ABIRF712 N-场效应400V 1.7A 36W TO-220ABIRF713 N-场效应350V 1.7A 36W TO-220ABIRF720 N-场效应GDS 400V 3.3A 50W TO-220AB 20nS1.8功放开关IRF721 N-场效应350V 3.3A 50W TO-220ABIRF722 N-场效应400V 2.8A 50W TO-220ABIRF723 N-场效应350V 2.8A 50W TO-220ABIRF730 NMOS GDS 400V5.5A75W29/24nS1.0 功放开关IRF732 N-场效应400V 4.5A 74W TO-220ABIRF733 N-场效应350V 4.5A 74W TO-220ABIRF740 N-FET400V10A125W 41/36ns0.55ohm 功放开关IRF741 N-场效应350V 10A 125W TO-220ABIRF742 N-场效应400V 8.3A 125W TO-220ABIRF743 N-场效应350V 8.3A 125W TO-220ABIRF820 N-场效应500V 2.5A 50W TO-220ABIRF821 N-场效应450V 2.5A 50W TO-220ABIRF822 N-场效应500V 2.2A 50W TO-220ABIRF823 N-场效应450V 2.2A 50W TO-220ABIRF830 NMOS GDS 500V4.5A75W23/23nS1.5 功放开关IRF831 N-场效应450V 4.5A 74W TO-220ABIRF832 N-场效应500V 4.0A 74W TO-220ABIRF833 N-场效应450V 4.0A 74W TO-220ABIRF840 NMOS GDS 500V8A125W35/33nS0.85 功放开关IRF841 N-场效应450V 8.0 125W TO-220ABIRF842 N-场效应500V 7.0 125W TO-220ABIRF843 N-场效应450V 7.0 125W TO-220ABIRF9130 P-场效应100V-12A 75W TO-3IRF9131 P-场效应60V-12A 75W TO-3IRF9132 P-场效应100V-10A 75W TO-3IRF9133 P-场效应60V –10A 75W TO-3IRF9140 P-场效应100V –19A 125W TO-3IRF9141 P-场效应60V –19A 125W TO-3IRF9142 P-场效应100V –15A 125W TO-3IRF9143 P-场效应60V –15A 125W TO-3IRF9230 P-场效应200V6.5A 75W TO-3IRF9231 P-场效应150V6.5A 75W TO-3IRF9232 P-场效应200V5.5A 75W TO-3IRF9233 P-场效应150V5.5A 75W TO-3IRF9240 P-场效应200V –11A 125W TO-3IRF9241 P-场效应150V –11A 125W TO-3IRF9242 P-场效应200V9.0A 125W TO-3IRF9243 P-场效应150V9.0A 125W TO-3IRF9510 P-场效应100V3.0A 20W TO-220ABIRF9511 P-场效应60V3.0A 20W TO-220ABIRF9512 P-场效应100V2.5A 20W TO-220ABIRF9513 P-场效应60V2.5A 20W TO-220ABIRF9520 P-场效应100V6.0A 40W TO-220ABIRF9521 P-场效应60V6.0A 40W TO-220ABIRF9522 P-场效应100V5.0A 40W TO-220ABIRF9523 P-场效应60V5.0A 40W TO-220ABIRF9530 PMOS GDS 100V12A75W140/140nS0.4 功放开关IRF9531 PMOS GDS 60V12A75W140/140S0.3 功放开关IRF9532 P-场效应100V –10A 75W TO-220ABIRF9533 P-场效应60V –10A 75W TO-220ABIRF9540 P-场效应100V –19A 125W TO-220ABIRF9541 PMOS GDS 60V19A125W140/141nS0.2 功放开关IRF9542 P-场效应100V –15A 125W TO-220ABIRF9543 P-场效应60V –15A 125W TO-220ABIRF9610 PMOS GDS 200V1A20W25/15nS2.3 功放开关IRF9611 P-场效应150V1.75A 20W TO-220ABIRF9612 P-场效应200V1.5A 20W TO-220ABIRF9613 P-场效应150V1.5A 20W TO-220ABIRF9620 P-场效应200V3.5A 40W TO-220ABIRF9621 P-场效应150V3.5A 40W TO-220ABIRF9622 P-场效应200V3.0A 40W TO-220ABIRF9623 P-场效应150V3.0A 40W TO-220ABIRF9630 PMOS GDS 200V6.5A75W100/80nS0.8 功放开关IRF9631 P-场效应150V 6.5A 75W TO-220ABIRF9632 P-场效应200V 5.5A 75W TO-220ABIRF9633 P-场效应150V 5.5A 75W TO-220ABIRF9634 P-场效应250V 3.4A 33W TO-220ABIRF9640 P-FET200V11A125W15/12ns0.5ohmIRF9641 P-场效应150V 11A 125W TO-220ABIRF9642 P-场效应200V 9A 125W TO-220ABIRF9643 P-场效应150V 9A 125W TO-220ABIRF9Z30 50V 18A 74W MOSIRF9Z34 60V 18A 74W MOSIRFBC20 NMOS GDS 600V2.2A50W15/30nS4.4 功放开关IRFBC30 NMOS GDS 600V3.6A74W20/21nS2.2 功放开关IRFBC40 NMOS GDS 600V6.2A125W27/30nS1.2 功放开关IRFBE30 NMOS GDS 800V2.8A75W15/30nS3.5 功放开关IRFD113 NMOS GDS 60V0.8A1W0.8 功放开关IRFD120 NMOS GDS 100V1.3A1W70/70nS0.3 功放开关IRFD123 NMOS GDS 80V1.1A1W70/70nS0.3 功放开关IRFD9120 PMOS GDS 100V1A1W0.6 功放开关IRFI730 NMOS GDS 400V4A32W1.0 功放开关IRFI744 NMOS GDS 400V4A32W1.0 功放开关IRFP054 NMOS GDS 60V65A180W0.022 功放开关IRFP064 60V 70A 300W MOSIRFP140 NMOS GDS 100V29150W0.85 功放开关IRFP150 NMOS GDS 100V40A180W210/140nS0.55 功放开关IRFP240 NMOS GDS 200V19A150W0.18 功放开关IRFP250 NMOS GDS 200V33A180W180/120nS0.08 功放开关IRFP254 250V 23A 180W MOSIRFP260 200V 46A 280W MOSIRFP264 250V 38A 280W MOSIRFP340 NMOS GDS 400V10A150W0.55 功放开关IRFP350 NMOS GDS 400V16A180W77/71nS0.3 功放开关IRFP353 NMOS GDS 350V14A180W77/71XnS0.4 功放开关IRFP360 NMOS GDS 400V23A250W140/99nS0.2 功放开关IRFP440 NMOS GDS 500V8.1A150W0.85 功放开关IRFP450 NMOS GDS 500V14A180W66/60nS0.4 功放开关IRFP460 NMOS GDS 500V20A250W120/98nS0.27 功放开关IRFP9140 PMOS GDS 100V19A150W100/70nS0.2 功放开关IRFP9240 PMOS GDS 200V12A150W68/57nS0.5 功放开关IRFPC40 600V 6.5A 150W MOSIRFPC50 600V 10A 180W MOSIRFPC60 600V 13A 200W MOSIRFPE40 800V 5.3A 150W MOSIRFPF40 NMOS GDS 900V4.7A150W2.5 功放开关IRFPF50 900V 6.8A 180W MOSIRFPG42 NMOS GDS 1000V3.9A150W4.2 功放开关IRFPG50 1000V 6.1A 180W MOSIRFS630B NMOS GDS 200V9A38W50/40nS0.4 =IRF630 IRFS634B NMOS GDS 250V8.1A38W50/40nS0.4 =IRF634 IRFS640B NMOS GDS 200V18A43W50/40nS0.4 =IRF640 IRFS9630 PMOS GDS 200V6.5A75W100/80nS0.8 功放开关IRFU020 NMOS GDS 50V15A42W 83/39nS0.1 功放开关IRFZ34 N-FET60V30A90W110/80ns0.05ohmIRFZ44 60V 35A 150W MOSIRFZ48 60V 50A 250W MOS。

常用高清行管和大功率三极管主要参数表

3. 行偏转线圈或行输出变压器局部短路造成行负责过重
常见场输出集成电路击穿导致行偏转线圈或行输出变压器绝缘性能下降，产生局部短路、行输出逆程电容漏电等。如果保护电路性能不完善，则会引起行管过流损坏。海信高清电视由于电源保护措施比较完善，所以这种情况不多见，表现出来的现象是行一开机就停。
4. 电源电压升高
2SC935 3DD102D、2SD320 电源调整管
2SC8937 D2027、2SD818 行输出管
2SC1034 2SD818、2SD299 行输出管
2SC1162 FA433A、2SC2068 场输出枕形校正
2SC1172 D2027、2SD820 行输出管
2SC1209 3DG12A、2SD734 电源误差放大管
*C3842 120 1500 6 行管
*C3883 50 1500 5 行管
C3885 50 1400 7 行管
C3886 50 1400 8 行管
C3887 80 1400 7 行管
C3888 80 1400 80 行管
C3889 80 1400 80 行管
*C3891 50 1400 6 行管
D1887 70 1500 10 行管
*D2125 50 1500 5 行管
*D870 50 1500 5 行管
功率Pcm/W 反压BVCBO 电流ICM/A （*带阻尼）
进口与国产显示器常用三极管代换表
型号可代用型号
2SA562 CG673B、2SB689 预视放
2SA670 2SA1069、2SB513 电源调整管
2SB556K CD77-1A、3CF5B 电源调整
2SB621 3CG23B、2SB1035 电源推动管

PWM控制的调速方法

设计报告书4.1.3、采用PWM控制的调速方法图1为PWM降压斩波器的原理电路及输出电压波形。

在图1a中，假定晶体管V1先导通T1，秒(忽略V1的管压降，这期间电源电压Ud全部加到电枢上)，然后关断T2秒(这期间电枢端电压为零)。

如此反复，则电枢端电压波形如图1b 中所示。

电动机电枢端电压Ua为其平均值。

图1 PWM 降压斩波器原理电路及输出电压波形a) 原理图 b)输出电压波形1112a d d d T T U U U U T T Tα===+ (3) 式(3)中1112T T T T Tα==+ （4）α为一个周期T 中，晶体管V1导通时间的比率，称为负载率或占空比。

使用下面三种方法中的任何一种，都可以改变α的值，从而达到调压的目的：(1)定宽调频法：T1保持一定，使T2在0～∞范围内变化；(2)调宽调频法：T2保持一定，使T1在0～∞范围内变化(3)定频调宽法：T1+T2=T 保持一定，使T ，在0～T 范围内变化。

不管哪种方法，α的变化范围均为0≤α≤l ，因而电枢电压平均值Ua 的调节范围为0～Ud ，均为正值，即电动机只能在某一方向调速，称为不可逆调速。

当需要电动机在正、反向两个方向调速运转，即可逆调速时，就要使用图1—2a 所示的桥式(或称H 型)降压斩波电路。

在图2a 中，晶体管V 1、V 4是同时导通同时关断的，V 2、V 3也是同时导通同时关断的，但V 1与V 2、V 3与V 4都不允许同时导通，否则电源Ud 直通短路。

设V 1、V 4先同时导通T1秒后同时关断，间隔一定时间(为避免电源直通短路。

该间隔时间称为死区时问)之后，再使V 2、V 3同时导通T2秒后同时关断，如此反复，则电动机电枢端电压波形如图2b 所示。

图2 桥式PWM 降压斩波器原理电路及输出电压波形a)原理图 b)输出电压波形电动机电枢端电压的平均值为12112(21)(21)a d d d T T T U U U U T T Tα-==-=-+ (4) 由于0≤α≤1，Ua 值的范围是 -Ud ～+Ud ，因而电动机可以在正、反两个方向调速运转。

常用高清行管和大功率三极管主要参数表

常用高清行管和大功率三极管主要参数表2010-03-02 10:33:54 阅读78 评论0 字号：大中小高清彩电行管损坏的原因及代换现在，大屏幕彩色电视大都是数字高清，原来50Hz的场扫描频率接近人眼感知频闪的临界点，所以高清电视都是提高扫描频率来提高图像的清晰度，即将场扫描提高到100Hz或是60Hz逐行，这样就会使行扫描的频率提高一倍，自然行输出管的开关速度和功耗都会随之增加，普通的行输出管已经不能胜任，要采用性能更好的大功率三极管。

目前采用的行管有：C5144、C5244、J6920、C5858、C5905等，这些行输出管的耐压都在1500V以上，电流多大于20A，但是由于其功耗比较大，损坏率还是比较高。

归纳起来，其损坏的原因一般有以下六种。

1. 行激励不足如果行激励不足，行管不能迅速截止与饱和，导致行管内阻变大，将造成行输出电路的功耗增加，引起行输出管发烫，一旦超过行管功耗的极限值，便会使行管烧坏。

在海信高清电视中，行振荡方波信号是由数字变频解码板输出，经过一对三极管2SC1815、2SA1015放大后，送到行激励管的基极。

这两个三极管工作在大电流开关状态，故障率相对较高，损坏后就会造成行激励不足，损坏行输出管，对比可以用示波器测量行管基极的波形来确定。

另外，行管基极的限流电阻阻值一般为0.1Ω，与行管的发射极串联，再与行激励变压器并联，若是阻值增大有可能用普通万用表测不出来。

我们曾经修过多例次电阻增值到2Ω以上而导致开机几分钟后行管损坏的故障，且损坏行管的比例较大。

2. 行逆程电压过高在行逆程期间，偏转线圈会对逆程电容充电，逆程电容容量大小决定充电的时间。

容量越小，充电时间越短，充电电压越高，因而会产生很高的反峰脉冲电压。

所以，当行一旦超过行管的耐压值，就会出现屡烧行管的结果。

我们在测量逆程电容时，一般是测量电容的直流参数，而一些ESR等交流参数无法测量，所以最好是代换较可靠。

3. 行偏转线圈或行输出变压器局部短路造成行负责过重常见场输出集成电路击穿导致行偏转线圈或行输出变压器绝缘性能下降，产生局部短路、行输出逆程电容漏电等。

Vishay Siliconix IRF740 SiHF740 第三代高功率MOSFET数据手册说明

Document Number: 91054 Power MOSFETIRF740, SiHF740Vishay SiliconixFEATURES•Dynamic dV/dt Rating •Repetitive Avalanche Rated •Fast Switching •Ease of Paralleling •Simple Drive Requirements•Compliant to RoHS Directive 2002/95/ECDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 50 V, starting T J = 25 °C, L = 9.1 mH, R g = 25 Ω, I AS = 10 A (see fig. 12).c.I SD ≤ 10 A, dI/dt ≤ 120 A/μs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.PRODUCT SUMMARYV DS (V)400R DS(on) (Ω)V GS = 10 V0.55Q g (Max.) (nC)63Q gs (nC)9.0Q gd (nC)32ConfigurationSingleTO-220ABGDSORDERING INFORMATIONPackage TO-220AB Lead (Pb)-free IRF740PbF SiHF740-E3 SnPbIRF740SiHF740ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)PA AMETE SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400VGate-Source Voltage V GS ± 20Continuous Drain Current V GS at 10 VT C = 25 °C I D10A T C = 100 °C6.3Pulsed Drain Current a I DM 40Linear Derating Factor1.0W/°C Single Pulse Avalanche Energy b E AS 520mJ Repetitive Avalanche Current a I AR 10 A Repetitive Avalanche Energy a E AR 13mJ Maximum Power Dissipation T C = 25 °CP D 125WPeak Diode Recovery dV/dt cdV/dt 4.0V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°C Soldering Recommendations (Peak Temperature)for 10 s 300d Mounting Torque6-32 or M3 screw10 lbf · in1.1N · m* Pb containing terminations are not RoHS compliant, exemptions may applyDocument Number: 91054IRF740, SiHF740Vishay SiliconixNotesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.THERMAL RESISTANCE RATINGSPA AMETE SYMBOL TYP.MAX.UNITMaximum Junction-to-Ambient R thJA -62°C/W Case-to-Sink, Flat, Greased Surface R thCS 0.50-Maximum Junction-to-Case (Drain)R thJC- 1.0IRF740, SiHF740Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)Fig. 1 - Typical Output Characteristics, T C = 25 °C Fig. 2 - Typical Output Characteristics, T C = 150 °CFig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. TemperatureDocument Number: 91054 IRF740, SiHF740 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91054Document Number: 91054 IRF740, SiHF740Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseDocument Number: 91054IRF740, SiHF740Vishay SiliconixFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test CircuitIRF740, SiHF740Vishay SiliconixFig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several q ualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?91054.Document Number: 91054 Package InformationVishay SiliconixRevison: 16-Jun-141Document Number: 71195TO-220ABNote* M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVMMILLIMETERSINCHES DIM.MIN.MAX.MIN.MAX.A 4.25 4.650.1670.183b 0.69 1.010.0270.040b(1) 1.20 1.730.0470.068c 0.360.610.0140.024D 14.8515.490.5850.610D212.1912.700.4800.500E 10.0410.510.3950.414e 2.41 2.670.0950.105e(1) 4.88 5.280.1920.208F1.14 1.400.0450.055H(1) 6.09 6.480.2400.255J(1)2.41 2.920.0950.115L13.3514.020.5260.552L(1) 3.32 3.820.1310.150Ø P 3.54 3.940.1390.155Q2.603.000.1020.118ECN: T14-0413-Rev. P, 16-Jun-14DWG: 5471Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyVishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.Revision: 02-Oct-121Document Number: 91000。

IRF系列高压MOS管

IRF系列高压MOS管高压MOS管----IRF系列学习杂记2008-01-29 15:04:28 阅读2856 评论2 字号：大中小订阅IRF024 N-场效应60 17 60 TO-204AAIRF034 N-场效应60 30 90 TO-204AEIRF035 N-场效应60 25 90 TO-204AEIRF044 N-场效应60 30 150 TO-204AEIRF045 N-场效应60 30 150 TO-204AEIRF054 N-场效应60 30 180 TO-204AAIRF120 N-场效应100 8.0 40 TO-3IRF121 N-场效应60 8.0 40 TO-3IRF122 N-场效应100 7.0 40 TO-3IRF123 N-场效应60 7.0 40 TO-3IRF130 100V 14A 79W N-场效应IRF130(铁)NMOS GDS 100V14A79W75/45nS0.16 功放开关IRF131 N-场效应60V14A 75W TO-3IRF132 N-场效应100V12A75W TO-3IRF133 N-场效应60V12A 75W TO-3IRF140 N-场效应100V 27A 125W TO-204AEIRF141 N-场效应60V 27A 125W TO-204AEIRF142 N-场效应100V24A 125W TO-204AEIRF143 N-场效应60V 24A 125W TO-204AEIRF150 N-场效应100V 40A 150W TO-204AEIRF151 N-场效应60V 40A 150W TO-204AEIRF152 N-场效应100V 33A 150W TO-204AEIRF153 N-场效应60V33A 150W TO-204AEIRF15N65 650V 5A 80W MOSIRF16N65 650V 6A 80W MOSIRF220 N-场效应200V 5.0A 40W TO-3IRF223 N-场效应150V 4.0A 40W TO-3IRF224 N-场效应250V3.8A 40W TO-204AAIRF225 N-场效应250V 3.3A 40W TO-204AAIRF230 N-场效应200V 9.0A 75W TO-3IRF230(铁)NMOS GDS 200V9A75W50/40nS0.4 功放开关IRF231 N-场效应150V 9.0A 75W TO-3IRF232 N-场效应200V 8.0A 75W TO-3IRF233 N-场效应150V 8.0A 75W TO-3IRF234 N-场效应250V 8.1A 75W TO-204AAIRF235 N-场效应250V 6.5A 75W TO-204AAIRF240 N-场效应200V 18A 125W TO-204AEIRF241 N-场效应150V 18A 125W TO-204AEIRF242 N-场效应200V 16A 125W TO-204AEIRF243 N-场效应150V 16A 125W TO-204AEIRF244 N-场效应250V 14A 125W TO-204AAIRF245 N-场效应250V 13A 125W TO-204AAIRF250 N-场效应200V 30A 150W TO-204AEIRF251 N-场效应150V 30A 150W TO-204AEIRF252 N-场效应200V 25A 150W TO-204AEIRF253 N-场效应150V 25A 150W TO-204AEIRF254 N-场效应250V 22A 150W TO-204AEIRF255 N-场效应250V 20A 150W TO-204AEIRF2807 70V 78A 180W MOSIRF320 N-场效应400V 3.0A 40W TO-3IRF3205 55V 110A 200W MOSIRF321 N-场效应350V 3.0A 40W TO-3IRF322 N-场效应400V 2.5A 40W TO-3IRF323 N-场效应350V 2.5A 40W TO-3IRF330 N-场效应400V 5.5A 75W TO-3IRF333 N-场效应350V 4.5A 75W TO-3IRF340 N-场效应400V 10A 125W TO-3IRF341 N-场效应350V 10A 125W TO-3IRF342 N-场效应400V 8.0A 125W TO-3IRF343 N-场效应350V 8.0A 125W TO-3IRF350 N-场效应400V 15A 150W TO-3IRF351 N-场效应350V 15A 150W TO-3IRF352 N-场效应400V 13A 150W TO-3IRF353 N-场效应350V 13A 150W TO-3IRF360 N-场效应400V 25A 300W TO-204AEIRF362 N-场效应400V 22A 300W TO-204AEIRF3710 100V 46A 150W MOSIRF420 N-场效应500V 2.5A 50W TO-3IRF421 N-场效应450V 2.5A 50W TO-3IRF422 N-场效应500V 2.0A 50W TO-3IRF423 N-场效应450V 2.0A 50W TO-3IRF430 N-场效应500V 4.5A 75W TO-3IRF431 N-场效应450V 4.5A 75W TO-3IRF432 N-场效应500V 4.0A 75W TO-3IRF433 N-场效应450V 4.0A 75W TO-3IRF440 N-场效应500V 8.0A 125W TO-3IRF440(铁)NMOS GDS 500V8A125W35/30nS0.85 功放开关IRF441 N-场效应450V 8.0A 125W TO-3IRF442 N-场效应500V 7.0A 125W TO-3IRF443 N-场效应450V 7.0A 125W TO-3IRF448 N-场效应500V 9.6A 130W TO-204AAIRF449 N-场效应500V 8.6A 130W TO-204AAIRF450 N-场效应500V 13A 150W TO-3IRF450(铁)NMOS GDS 500V13A125W66/60nS0.4 功放开关IRF452 N-场效应500V 12A 150W TO-3IRF453 N-场效应450V 12A 150W TO-3IRF460 N-场效应500V 21A 300W TO-204AEIRF460(铁)NMOS GDS 500V 21AW66/60nS0.4 功放开关IRF462 N-场效应500V 19A 300W TO-204AEIRF48 N-场效应60V50A190W TO-220ABIRF510 N-场效应100V 5.6A 43W TO-220ABIRF511 N-场效应80V 5.6A 43W TO-220ABIRF512 N-场效应100V 4.9A 43W TO-220ABIRF513 N-场效应80V 4.9A 43W TO-220ABIRF520 N-场效应100V 9.2A 60W TO-220ABIRF521 N-场效应80V 9.2A 60WTO-220ABIRF522 N-场效应100V 8A 60W TO-220ABIRF523 N-场效应80V 8A 60W TO-220ABIRF530 N-场效应100V 14A 79W TO-220ABIRF530 N-FET100V14A79W 51/36ns0.18ohmIRF530 NMOS GDS 100V14A79W51/36nS0.18 功放开关IRF531 N-场效应80V 14A 79W TO-220ABIRF532 N-场效应100V 12A 79W TO-220ABIRF533 N-场效应80V 12A 79W TO-220ABIRF540 NMOS+D GDS 100V28A150W110/75nS0.077 功放开关IRF540A NMOS GDS 100V28A107W Id m=110A/0.052Ω 功放开关IRF541 NMOS GDS 80V28A150W110/75nS0.077 功放开关IRF542 N-场效应100V 25A 150W TO-220ABIRF543 N-场效应80V 25A 150W TO-220ABIRF610 NMOS GDS 200V3.3A43W26/13nS1.5 功放开关IRF611 N-场效应150V 3.3A 43W TO-220ABIRF612 N-场效应200V 2.6A 43W TO-220ABIRF614 N-场效应250V 2.0A 20W TO-220ABIRF615 N-场效应250V 1.6A 20W TO-220ABIRF620 N-场效应200V 5A 40W TO-220ABIRF621 N-场效应150V 5A 40W TO-220ABIRF622 N-场效应200V 4A 40W TO-220ABIRF623 N-场效应150V 4A 40W TO-220ABIRF624 N-场效应250V 3.8A 40W TO-220ABIRF625 N-场效应250V 3.3A 40W TO-220ABIRF630 NMOS GDS 200V9A75W50/40nS0.4 功放开关IRF631 N-场效应150V 9A 75W TO-220ABIRF632 N-场效应200V 8A 75W TO-220ABIRF633 N-场效应150V 8A 75W TO-220ABIRF634 N-场效应250V 8.1A 75W TO-220ABIRF635 N-场效应250V 6.5A 75W TO-220ABIRF640 N-FET GDS 200V18A125W 77/54ns0.18ohm功放开关IRF641 N-场效应150V 18A 125W TO-220ABIRF642 N-场效应200V 16A 125W TO-220ABIRF643 N-场效应150V 16A 125W TO-220ABIRF644 N-场效应250V 14A 125W TO-220ABIRF645 N-场效应250V 13A 125W TO-220ABIRF710 N-场效应400V 2.0A 36W TO-220ABIRF711 N-场效应350V 2.0A 36W TO-220ABIRF712 N-场效应400V 1.7A 36W TO-220ABIRF713 N-场效应350V 1.7A 36W TO-220ABIRF720 N-场效应GDS 400V 3.3A 50W TO-220AB 20nS1.8功放开关IRF721 N-场效应350V 3.3A 50W TO-220ABIRF722 N-场效应400V 2.8A 50W TO-220ABIRF723 N-场效应350V 2.8A 50W TO-220ABIRF730 NMOS GDS 400V5.5A75W29/24nS1.0 功放开关IRF732 N-场效应400V 4.5A 74W TO-220ABIRF733 N-场效应350V 4.5A 74W TO-220ABIRF740 N-FET400V10A125W 41/36ns0.55ohm 功放开关IRF741 N-场效应350V 10A 125W TO-220ABIRF742 N-场效应400V 8.3A 125W TO-220ABIRF743 N-场效应350V 8.3A 125W TO-220ABIRF820 N-场效应500V 2.5A 50W TO-220ABIRF821 N-场效应450V 2.5A 50W TO-220ABIRF822 N-场效应500V 2.2A 50W TO-220ABIRF823 N-场效应450V 2.2A 50W TO-220ABIRF830 NMOS GDS 500V4.5A75W23/23nS1.5 功放开关IRF831 N-场效应450V 4.5A 74W TO-220ABIRF832 N-场效应500V 4.0A 74W TO-220ABIRF833 N-场效应450V 4.0A 74W TO-220ABIRF840 NMOS GDS 500V8A125W35/33nS0.85 功放开关IRF841 N-场效应450V 8.0 125W TO-220ABIRF842 N-场效应500V 7.0 125W TO-220ABIRF843 N-场效应450V 7.0 125W TO-220ABIRF9130 P-场效应100V-12A 75W TO-3IRF9131 P-场效应60V-12A 75W TO-3IRF9132 P-场效应100V-10A 75W TO-3IRF9133 P-场效应60V –10A 75W TO-3IRF9140 P-场效应100V –19A 125W TO-3IRF9141 P-场效应60V –19A 125W TO-3IRF9142 P-场效应100V –15A 125W TO-3IRF9143 P-场效应60V –15A 125W TO-3IRF9230 P-场效应200V6.5A 75W TO-3IRF9231 P-场效应150V6.5A 75W TO-3IRF9232 P-场效应200V5.5A 75W TO-3IRF9233 P-场效应150V5.5A 75W TO-3IRF9240 P-场效应200V –11A 125W TO-3IRF9241 P-场效应150V –11A 125W TO-3IRF9242 P-场效应200V9.0A 125W TO-3IRF9243 P-场效应150V9.0A 125W TO-3IRF9510 P-场效应100V3.0A 20W TO-220ABIRF9511 P-场效应60V3.0A 20W TO-220ABIRF9512 P-场效应100V2.5A 20W TO-220ABIRF9513 P-场效应60V2.5A 20W TO-220ABIRF9520 P-场效应100V6.0A 40W TO-220ABIRF9521 P-场效应60V6.0A 40W TO-220ABIRF9522 P-场效应100V5.0A 40W TO-220ABIRF9523 P-场效应60V5.0A 40W TO-220ABIRF9530 PMOS GDS 100V12A75W140/140nS0.4 功放开关IRF9531 PMOS GDS 60V12A75W140/140S0.3 功放开关IRF9532 P-场效应100V –10A 75W TO-220ABIRF9533 P-场效应60V –10A 75W TO-220ABIRF9540 P-场效应100V –19A 125W TO-220ABIRF9541 PMOS GDS 60V19A125W140/141nS0.2 功放开关IRF9542 P-场效应100V –15A 125W TO-220ABIRF9543 P-场效应60V –15A 125W TO-220ABIRF9610 PMOS GDS 200V1A20W25/15nS2.3 功放开关IRF9611 P-场效应150V1.75A 20W TO-220ABIRF9612 P-场效应200V1.5A 20W TO-220ABIRF9613 P-场效应150V1.5A 20W TO-220ABIRF9620 P-场效应200V3.5A 40W TO-220ABIRF9621 P-场效应150V3.5A 40W TO-220ABIRF9622 P-场效应200V3.0A 40W TO-220ABIRF9623 P-场效应150V3.0A 40W TO-220ABIRF9630 PMOS GDS 200V6.5A75W100/80nS0.8 功放开关IRF9631 P-场效应150V 6.5A 75W TO-220ABIRF9632 P-场效应200V 5.5A 75W TO-220ABIRF9633 P-场效应150V 5.5A 75W TO-220ABIRF9634 P-场效应250V 3.4A 33W TO-220ABIRF9640 P-FET200V11A125W15/12ns0.5ohmIRF9641 P-场效应150V 11A 125W TO-220ABIRF9642 P-场效应200V 9A 125W TO-220ABIRF9643 P-场效应150V 9A 125W TO-220ABIRF9Z30 50V 18A 74W MOSIRF9Z34 60V 18A 74W MOSIRFBC20 NMOS GDS 600V2.2A50W15/30nS4.4 功放开关IRFBC30 NMOS GDS 600V3.6A74W20/21nS2.2 功放开关IRFBC40 NMOS GDS 600V6.2A125W27/30nS1.2 功放开关IRFBE30 NMOS GDS 800V2.8A75W15/30nS3.5 功放开关IRFD113 NMOS GDS 60V0.8A1W0.8 功放开关IRFD120 NMOS GDS 100V1.3A1W70/70nS0.3 功放开关IRFD123 NMOS GDS 80V1.1A1W70/70nS0.3 功放开关IRFD9120 PMOS GDS 100V1A1W0.6 功放开关IRFI730 NMOS GDS 400V4A32W1.0 功放开关IRFI744 NMOS GDS 400V4A32W1.0 功放开关IRFP054 NMOS GDS 60V65A180W0.022 功放开关IRFP064 60V 70A 300W MOSIRFP140 NMOS GDS 100V29150W0.85 功放开关IRFP150 NMOS GDS 100V40A180W210/140nS0.55 功放开关IRFP240 NMOS GDS 200V19A150W0.18 功放开关IRFP250 NMOS GDS 200V33A180W180/120nS0.08 功放开关IRFP254 250V 23A 180W MOSIRFP260 200V 46A 280W MOSIRFP264 250V 38A 280W MOSIRFP340 NMOS GDS 400V10A150W0.55 功放开关IRFP350 NMOS GDS 400V16A180W77/71nS0.3 功放开关IRFP353 NMOS GDS 350V14A180W77/71XnS0.4 功放开关IRFP360 NMOS GDS 400V23A250W140/99nS0.2 功放开关IRFP440 NMOS GDS 500V8.1A150W0.85 功放开关IRFP450 NMOS GDS 500V14A180W66/60nS0.4 功放开关IRFP460 NMOS GDS 500V20A250W120/98nS0.27 功放开关IRFP9140 PMOS GDS 100V19A150W100/70nS0.2 功放开关IRFP9240 PMOS GDS 200V12A150W68/57nS0.5 功放开关IRFPC40 600V 6.5A 150W MOSIRFPC50 600V 10A 180W MOSIRFPC60 600V 13A 200W MOSIRFPE40 800V 5.3A 150W MOSIRFPF40 NMOS GDS 900V4.7A150W2.5 功放开关IRFPF50 900V 6.8A 180W MOSIRFPG42 NMOS GDS 1000V3.9A150W4.2 功放开关IRFPG50 1000V 6.1A 180W MOSIRFS630B NMOS GDS 200V9A38W50/40nS0.4 =IRF630 IRFS634B NMOS GDS 250V8.1A38W50/40nS0.4 =IRF634 IRFS640B NMOS GDS 200V18A43W50/40nS0.4 =IRF640 IRFS9630 PMOS GDS 200V6.5A75W100/80nS0.8 功放开关IRFU020 NMOS GDS 50V15A42W 83/39nS0.1 功放开关IRFZ34 N-FET60V30A90W110/80ns0.05ohmIRFZ44 60V 35A 150W MOSIRFZ48 60V 50A 250W MOS。

常用MOS管型号大全

GSD
高频低噪放大
20V0.5-8mA0.25W100MHz3dB
2SK214
NMOS
GSD
高频高速开关
160V0.5A30W
2SK241
NMOS
DSG
高频放大
-20V0.03A0.2W100MHz1.7dB
2SK304
NJ
GSD
音频功放
30V0.6-12mA0.15W
2SK385
NMOS
GDS
高速开关
J177
PMOS
2SJ177
PMOS
GDS
激励(无)
-60V20A35W140/580nS0.085
J201
PMOS
GDS
高频放大
10V0.4A1.3W8GHZ
2SJ312
PMOS
GDS
激励
60V14A40W30/120nS0.12
2SK30
NJ
SDG
低放音频
-50V0.5mA0.1W0.5dB
2SK30A
NMOS
GDS
高速开关
500V15A100W0.4
2SK623
NMOS
GDS
高速开关
250V20A120W0.15
2SK727
NMOS
GDS
电源开关
-900V5A125W110/420nS2.5
2SK734
NMOS
GDS
电源开关
450V15A150W160/250nS0.52
2SK785
NMOS
GDS
2SK2487
NMOS
GDS
监视器用电源
900V8A140W 50/153nS1.1

irf740导通电压

irf740导通电压？
答：IRF740是一款由Infineon Technologies生产的功率MOSFET晶体管。

对于其导通电压，一般来说，MOSFET的导通电压取决于其门极-源极电压（VGS）。

IRF740的门极-源极电压范围通常是±20V。

然而，实际导通所需的电压可能会在这个范围内变化，并且可能受到其他因素的影响，如温度、电流等。

因此，为了获得IRF740在具体应用中的准确导通电压，建议查阅相关的数据手册、应用笔记或者联系制造商进行咨询。

同时，在实际应用中，还需要考虑电路设计和工作条件等因素，以确保MOSFET能够正常导通并稳定工作。

IRF740A中文资料

Max.
10 6.3 40 125 1.0 ± 30 5.9 -55 to + 150 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V V/ns °C
Typical SMPS Topologies:
l l
Single transistor Flyback Xfmr. Reset Single Transistor Forward Xfmr. Reset ( Both for US Line Input only )
Fig 4. Normalized On-Resistance Vs. Temperature

3
元器件交易网
IRF740A
20
100000
ID = 10A VDS = 320V VDS = 200V VDS = 80V
VGS , Gate-to-Source Voltage (V)
元器件交易网
PD- 92004
SMPS MOSFET
IRF740A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching
10000
VGS = 0V, f = 1 MHZ Ciss = C + Cgd , C gs ds SHORTED Crss = C gd Coss = C + C ds gd
16
C, Capacitance(pF)
1000
Ciss

元件选型型号

型号：2N4401参数：Small Signal General Purpose NPN原装正品，进口全新，无铅环保，可长期供货。

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我们视“客户+企业=共赢”作为企业发展的基础，做最诚信的供应商，希望真诚与您携手共进、共同成长，为国家的和谐发展和电子行业的繁荣作出应有的贡献！++++系列场效应管（MOSFET）：IRF1010E，IRF1404，IRF1405，IRF5305，IRF2807，IRF3205，IRF3710，I RF4905，IRF5210，IRF530，IRF530N，IRF540N，IRF630N，IRF640N，IR F730，IRF740，IRF830，IRF840，IRF9510，IRF9520，IRF9530N，IRF954 0，IRF9540N，IRF9630，IRF9640，IRFZ24N，IRFZ34N，IRFZ44N，IRFZ4 4R，IRFZ44V，IRLZ44N，IRFZ46N，IRFZ46Z，IRFZ48V，IRFZ48N，IRF9 Z24N，IRF9Z34N，IRFP150，IRFP150N，IRFP250N，IRFP260N，IRFP25 4N，IRFP264，IRFP264N，IRFP350，IRFP360，IRFP450，IRFP450LC，I RFP460，IRFP460A，IRFP460LC，IRFP054N，IRFP064N，IRFBE30，IRF 520N，IRF634，IRF710，IRF720，IRF820，IRF4905L，IRF5303，IR2520D，IRFP240，IRFP9240，IRF610，IRF9610，IRF5210，IRFR024N，IRFR120N，IRFR220N，IRFR9024，IRFR420，IRFR5305，IRF7313，IRF7314，IRF741 3，IRFL9110，IRL3705，IRL3803，IRL3803S，IRFD110，IRFD9110，IRFD9220，IRFD220，IRFD120，IRFD9120，IRFU9120，IRF6216，IRF640NS，IRF3415，IRFB4310，IRF7210，IRF9530S，IRF7832，IRFP140N，IRFP44 8，IRFP2907，IRFP9140N，IRFPC50，IRFPC60，IRFBE30，IRFPE40，IR FPE50，IRFPF50，IRFPG50，IRFBC20，IRFBC30，IRFBC40，IRFBG20，IRFBG30，IRLML6302TR，IRLML2402TR，IRLML2502TR，IRLML2803TR，IRLML5103TR，IRLML5203TR，IRLML6401TR，IRLML6402TR，IRFB4710，IRFB4212，IRFB11N50A，IRFB38N20D，IRFB31N20D，STP60NF06，STP 75NF75，STP55NF06，2SK2645，IRF630B，IRF640B，IRF840B，FQPF2 N60C，FQP5N60C，FQF5N60C，SSS7N60B，FQPF8N60C，FQPF10N60 C，FQPF12N60C，FYP2010DNTU，FQP50N06，FGA15N120ANTDTU，FGA25N120ANTDTU。

常用功率场效应管参数大全

常用功率场效应管参数大全(word版可编辑修改)
编辑整理：
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常用功率场效应管参数大全。

IRF740中文资料

IRF740N -CHANNEL 400V -0.48Ω-10A -TO-220PowerMESH ™MOSFETs TYPICAL R DS(on)=0.48Ωs EXTREMELY HIGH dv/dt CAPABILITY s 100%AVALANCHE TESTEDs VERY LOW INTRINSIC CAPACITANCES sGATE CHARGE MINIMIZEDDESCRIPTIONThis power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY ™process.This technology matches and improves the performances compared with standard parts from various sources.APPLICATIONSs HIGH CURRENT SWITCHINGs UNINTERRUPTIBLE POWER SUPPLY (UPS)s DC/DC COVERTERS FOR TELECOM,INDUSTRIAL,AND LIGHTING EQUIPMENT.®INTERNAL SCHEMATIC DIAGRAMOctober 1998ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)400V V DGR Drain-gate Voltage (R GS =20k Ω)400V V GS Gate-source Voltage±20V I D Drain Current (continuous)at T c =25o C 10A I D Drain Current (continuous)at T c =100o C 6.3A I DM (•)Drain Current (pulsed)40A P tot Total Dissipation at T c =25o C 125W Derating Factor1.0W/o C dv/dt(1)Peak Diode Recovery voltage slope 4.0V/nsT s tg Storage Temperature-65to 150o C T jMax.Operating Junction Temperature150oC(•)Pulse width limited by safe operating area (1)I SD ≤10A,di/dt ≤120 Α/µs,V DD ≤V (BR)DSS ,Tj ≤T JMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this DatasheetTYPE V DSS R DS(on)I D IRF740400V<0.55Ω10A123TO-2201/8THERMAL DATAR thj-case Rthj-amb R thc-sinkT l Thermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose1.062.50.5300o C/WoC/Wo C/Wo CAVALANCHE CHARACTERISTICSSymbol Parameter Max Value UnitI AR Avalanche Current,Repetitive or Not-Repetitive(pulse width limited by T j max)10AE AS Single Pulse Avalanche Energy(starting T j=25o C,I D=I AR,V DD=50V)520mJELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-sourceBreakdown VoltageI D=250µA V GS=0400VI DSS Zero Gate VoltageDrain Current(V GS=0)V DS=Max RatingV DS=Max Rating T c=125o C150µAµAI GSS Gate-body LeakageCurrent(V DS=0)V GS=±20V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate ThresholdVoltageV DS=V GS I D=250µA234VR DS(on)Static Drain-source OnResistanceV GS=10V I D=5.3A0.480.55ΩI D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma xV GS=10V10A DYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg f s(∗)ForwardTransconductanceV DS>I D(o n)x R DS(on)ma x I D=6A 5.8SC iss C os s C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V GS=0140022027pFpFpFIRF740 2/8ELECTRICAL CHARACTERISTICS(continued)SWITCHING ONSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r Turn-on TimeRise TimeV DD=200V I D=5AR G=4.7 ΩV GS=10V(see test circuit,figure3)1710nsnsQ g Q gs Q gd Total Gate ChargeGate-Source ChargeGate-Drain ChargeV DD=320V I D=10.7A V GS=10V35111243nCnCnCSWITCHING OFFSymbol Parameter Test Conditions Min.Typ.Max.Unitt r(Voff) t f t c Off-voltage Rise TimeFall TimeCross-over TimeV DD=320V I D=10AR G=4.7 ΩV GS=10V(see test circuit,figure5)101017nsnsnsSOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI SD I SDM(•)Source-drain CurrentSource-drain Current(pulsed)1040AAV SD(∗)Forward On Voltage I SD=10A V GS=0 1.6Vt rr Q rr I RRM Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentI SD=10A di/dt=100A/µsV DD=100V T j=150o C(see test circuit,figure5)3703.217nsµCA(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%(•)Pulse width limited by safe operating areaSafe Operating Area Thermal ImpedanceIRF7403/8Output Characteristics TransconductanceGate Charge vs Gate-source Voltage Transfer CharacteristicsStatic Drain-source On Resistance Capacitance VariationsIRF740 4/8Normalized Gate Threshold Voltage vs TemperatureSource-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureIRF7405/8Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.1:Unclamped Inductive Waveform Fig.4:Gate Charge test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesIRF7406/8DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 4.40 4.600.1730.181C 1.23 1.320.0480.051D 2.402.720.0940.107D1 1.270.050E 0.490.700.0190.027F 0.610.880.0240.034F1 1.14 1.700.0440.067F2 1.14 1.700.0440.067G 4.95 5.150.1940.203G1 2.4 2.70.0940.106H210.010.400.3930.409L216.40.645L413.014.00.5110.551L5 2.65 2.950.1040.116L615.2515.750.6000.620L7 6.2 6.60.2440.260L9 3.5 3.930.1370.154DIA.3.75 3.850.1470.151L6ACDED 1FGL7L2Dia.F 1L5L4H 2L9F 2G 1TO-220MECHANICAL DATAP011CIRF7407/8IRF740Information furnished is believed to be accurate and reliable.However,STMicroelectronics assumes no responsibility for the consequence s of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all information previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronics©1998STMicroelectronics–Printed in Italy–All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia-Brazil-Canada-China-France-Germany-Italy-Japan-Korea-Malaysia-Malta-Mexico-Morocco-The Netherlands-Singapore-Spain-Sweden-Switzerland-Taiwan-Thailand-United Kingdom-U.S.A..8/8。

IRF740中文资料_数据手册_参数

IRF740B/IRFS740B
November 2001
IRF740B/IRFS740B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.
IRF740B/IRFS740B
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS ∆BVDSS / ∆TJ
--
--
--
--

IRF系列场效应管参数

TO-3 TO-3 TO-204AA TO-204AA TO-3 TO-3 TO-3 TO-3 TO-204AA TO-204AA TO-204AE TO-204AE TO-204AE TO-204AE TO-204AA TO-204AA TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-3 TO-3 TO-3 TO-3 TO-3 TO-3
4 4 3.8 3.3 9 9 8 8 8.1 6.5 18 18 16 16 14 13 2.0 2.0 1.7 1.7 3.3 3.3 2.8 2.8 5.5 5.5 4.5 4.5
40 40 40 40 75 75 75 75 75 75 125 125 125 125 125 125 36 36 36 36 50 50 50 50 74 74 74 74
12 12 21 19 5.6 5.6 4.9 4.9 9.2 9.2 8 8 14 14 12 12 28 28 25 25 3.3 3.3 2.6 2.6 2.0 1.6 5 5
150 150 300 300 43 43 43 43 60 60 60 60 79 79 79 79 150 150 150 150 43 43 43 43 20 20 40 40
IRF 系列场效应管参数明细
型号 IRF48 IRF024 IRF034 IRF035 IRF044 IRF045 IRF054 IRF120 IRF121 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 厂家 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR 用途构造沟道方式 N N N N N N N N N N N N N N N N N N N N N N N N N v111(V) 60 60 60 60 60 60 60 100 60 100 60 100 60 100 60 100 60 100 60 100 60 100 60 200 150 区分 ixing(A) 50 17 30 25 30 30 30 8.0 8.0 7.0 7.0 14 14 12 12 27 27 24 24 40 40 33 33 5.0 5.0 pdpch(W) waixing 190 60 90 90 150 150 180 40 40 40 40 75 75 75 75 125 125 125 125 150 150 150 150 40 40 TO-220AB TO-204AA TO-204AE TO-204AE TO-204AE TO-204AE TO-204AA TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-3 TO-3

三极管参数

3DD15D参数：BVceo=150V，Pcm=50W，Icm=6A。

3DD207参数：BVceo=200V，Pcm=50W，Icm=6A。

2n3055 Vceo 60V Pd 115W Ic 15A三极管参数大全3型号功率W 反压V 电流A 功能(*带阻尼)C3842* 120W 1500V 6A 行管C3883* 50W 1500V 5A 行管C3885 50W 1400V 7A 行管C3886 50W 1400V 8A 行管C3887 80W 1400V 7A 行管C3888 80W 1400V 80A 行管C3889 80W 1400V 80A 行管C3891* 50W 1400V 6A 行管C3892* 50W 1400V 7A 行管C3893* 50W 1400V 8A 行管C3895 60W 1400V 7A 行管C3896 70W 1400V 8A 行管C3897* 180W 1500V 12A 行管C3897 250W 1500V 25A 行管C3998 250W 1500V 25A 行管C4122* 60W 1500V 6A 行管C4123* 60W 1500V 7A 行管C4124* 70W 1500V 8A 行管C4125* 70W 1500V 10A 行管C4237 150W 800V 10A 行管C4293* 50W 1500V 5A 行管C4294* 50W 1500V 6A 行管C4589* 50W 1500V 10A 行管C4742* 50W 1500V 6A 行管C4744* 50W 1500V 6A 行管C4747 50W 1500V 10A 行管C4769* 60W 1500V 7A 行管C4770 60W 1500V 7A 行管C5048 50W 1500V 12A 行管型号功率W 反压V 电流A 功能(*带阻尼) C5088 45W 1500V 8A 行管C5129 50W 1500V 6A 行管C5144 200W 1700V 20A 行管C5148 50W 1500V 8A 行管C5250 50W 1500V 8A 行管C5297 60W 1500V 8A 行管C5299 60W 1400V 8A 行管C5339 50W 1500V 7A 行管C5418 120W 1500V 6A 行管D1396* 50W 1500V 2A 行管D1398* 50W 1500V 5A 行管D1402 120W 1500V 5A 电源开关管D1403 120W 1500V 6A 电源开关管D1426* 80W 1500V 3.5A 行管D1427* 80W 1500V 5A 行管D1428* 80W 1500V 6A 行管D1433 80W 1500V 7A 行管D1434 80W 1500V 5A 行管D1555 50W 1500V 5A 电源开关管D1878* 60W 1500V 6A 行管D1879* 60W 1500V 5A 行管D1880* 70W 1500V 8A 行管D1881* 70W 1500V 10A 行管D1886 70W 1500V 8A 行管D1887 70W 1500V 10A 行管D2125* 50W 1500V 5A 行管D870* 50W 1500V 5A 行管进口与国产显示器常用三极管代换表型号可代用型号用途2SA562 CG673B.2SB689 预视放2SA670 2SA1069.2SB513 电源调整管2SA673 2SA719.2SA697 帧激励2SA715 3CF3A.2SB529 场输出管2SA778A 3CG21C.CG75-1AB 开关电源误差放大2SA778AK C3CG21G、CG75-1A 开关电源误差放大2SA844D 3CG21C、CG75-1AB 视放2SA844E 3CG21G 视放2SA940 CD568B 场输出管2SA6395 2SA778、2SA858 行激励管2SB337 B337 电源调整管2SB407 3L780 电源调整管2SB548 3CF3B、2SA794 场输出管2SB566AK CD77-1A、3CF5A 电源调整管2SB556K CD77-1A、3CF5B 电源调整2SB621 3CG23B、2SB1035 电源推动管2SC536 3DG4A、2SC2320 电源推动管2SC562 G6738、B689 预视放2SC633 3DG6B、2SC1684 行振荡管2SC634 3DG12B 行振荡管2SC643A D2027、2SD818 行输出管2SC680A 3DD205B、2SC1025 场输出2SC681 3DD102B、2SC901 行输出2SC734 3DX200B、2SC2274 行振荡管2SC828 3DG56B、2SC3330 电源误差放大管2SC935 3DD102D、2SD320 电源调整管2SC8937 D2027、2SD818 行输出管进口与国产显示器常用三极管代换表2SC1034 2SD818、2SD299 行输出管2SC1162 FA433A、2SC2068 场输出枕形校正2SC1172 D2027、2SD820 行输出管2SC1209 3DG12A、2SD734 电源误差放大管2SC1213 3DG130A、2SC2120 电源误差放大管2SC1213A 3DG12B、2SC1247A 电源误差放大2SC1214 3DA151A、2SC2002 枕形校正2SC1308 D209、2SD820 行输出管2SC1318 3DG12A、2SC2274 行激励管2SC1364 3DX2038、2SC2320 行激励管2SC1505 DA1722B、2SC1757 行视放2SC1507 DA1722B、2SC1756、2SC1757 行激励管2SC1364 3DX2038、C23020 行激励管2SC1520 DA1722B、2SC2068 预视放2SC1566 3DA151D、2SC1514 视放2SC1573 3DA87C、2SC1762 视放2SC1672 3DD102B、2SC2433 电源调整管2SC1819 3DA151D、2SC2425 视放2SC1890A 3DA878、2SC2363 视放2SC1905 3DA151D、2SD1163 视放2SC1942 D209、2SD1401 行输出管2SC2233 3DD12B、2SC2373 行输出2SD201 3DD102A、2SD125A 电源调整管2SD226 3DD207、2SD315 电源调整管2SD299 D2027、2SC1308 行输出管2SD350 D2027、2SD348 行输出管2SD380 D209、2SD348 行输出管2SD869 2SD993、2SD898B 行输出管C3150 C3151、C3152 开关管BU508A BU508D、C3893、C3895、C3897 开关管场效应管主要参数表型号功率W 电流A D-S极间耐压V2SK534 100W 5A 800V2SK538 100W 3A 900V2SK557 100W 12A 500V2SK560 100W 15A 500V2SK566 78W 3A 800V2SK644 125W 10A 500V2SK719 120W 5A 900V2SK725 125W 15A 500V2SK727 125W 5A 900V2SK774 120W 18A 500V2SK785 150W 20A 500V2SK787 150W 8A 900V2SK788 150W 13A 500V2SK790 150W 15A 500V2SK956 150W 9A 800V2SK962 150W 8A 900V2SK1019 300W 30A 500V2SK1020 300W 30A 500V2SK1045 150W 5A 900V2SK1081 125W 7A 800V2SK1082 125W 6A 800V2SK1117 100W 6A 600V2SK1118 45W 6A 600V2SK1119 100W 4A 1000V2SK1120 150W 8A 1000V2SK1171 240W 5A 1400V型号功率W 电流A D-S极间耐压V 2SK1198 75W 3A 800V2SK1249 130W 15A 500V2SK1250 150W 20A 500V2SK1271 240W 15A 1400V2SK1280 150W 18A 500V2SK1281 120W 4A 700V2SK1341 100W 5A 900V2SK1342 100W 8A 900V2SK1356 40W 3A 900V2SK1357 125W 5A 900V2SK1358 150W 9A 900V2SK1451 120W 5A 900V2SK1498 120W 20A 500V2SK1500 160W 25A 500V2SK1502 120W 7A 900V2SK1531 150W 15A 500V2SK1537 100W 5A 900V2SK1539 150W 10A 900V2SK1563 150W 12A 500V2SK1649 100W 6A 900V2SK1794 150W 6A 900V2SK2038 125W 6A 900V2N7000 0.4W 0.2A 60VBUZ385 125W 6A 500VGH30N60 180W 30A 600VGH30N100 250W 30A 1000VGH40N60 200W 40A 600V型号功率W 电流A D-S极间耐压V H1245 120W 12A 450VH13N50 150W 13A 500VIBF834 100W 3A 500VIPF440 125W 8A 500VIRT450 150W 13A 500VIRF350 150W 13A 500VIRF360 300W 25A 400VIRF440 125W 8A 500VIRF451 150W 13A 450VIRF460 300W 21A 500VIRF620 40W 5A 200VIRF630 75W 9A 200VIRF634 75W 8.1A 250VIRF640 125W 18A 200VIRF730 75W 5.5A 400VIRF820 50W 2.5A 500VIRF830 75W 4.5A 500VIRF834 100W 5A 500VIRF840 125W 8A 500VIRF841 125W 8A 450VIRF842 125W 7A 500VIRF9610 20W 1A 200VIRF9630 75W 6.5A 200VIRF9640 125W 11A 200VIRF450 150W 13A 500VIRFD113 1W 0.8A 80VIRFD123 1W 1.1A 80VFIRP150 180W 41A 100V型号功率W 电流A D-S极间耐压V IRFP151 180W 19A 60VIRFP240 150W 31A 200VIRFP250 180W 31A 200VIRFP251 180W 33A 150VIRFP254 180W 23A 250VIRFP350 180W 16A 400VIRFP351 180W 16A 350VIRFP360 250W 23A 400VIRFP450 180W 14A 500VIRFP452 180W 12A 500VIRFP460 250W 20A 500VIRFBC40 125W 6.2A 600VIRF4P51 180W 14A 450VIXGH10N100 100W 10A 1000V IXGH15N100 150W 150A 1000VIXTH50X20 250W 50A 200VIXTH67N10 200W 67A 100VLXTH24N50 250W 24A 500VLXTH30N20 180W 30A 200VLXTH30N30 180W 30A 300VLXTH30N50 300W 30A 500VLXTH40N30 250W 40A 300VLXTH50N10 150W 50A 100VLXTH50N20 150W 50A 200VLXTH67N70 200W 67A 100VLXTH75N10 200W 75A 100VMTH8N50 120W 8A 500V型号功率W 电流A D-S极间耐压V MTM6N80 120W 6A 800VMETH10N50 120W 10A 500VMTH12N50 120W 12A 500VMTH14N50 150W 14A 500VMTH20N20 120W 20A 200VMTH25N10 150W 25A 200VMTH30N10 120W 30A 100VMTH35N15 150W 35A 150VMTH40N10 150W 40A 100VMTH8N60 120W 8A 600VMTM10N20 75W 10A 200VMTM20N20 125W 20A 200VMTM25N10 100W 25A 100VMTM30N10 120W 30A 100VMTM40N10 150W 40A 100VMTM8N90 150W 8A 900V MTP3N60 75W 3A 600V MTP3N100 75W 3A 1000V MTP4N60 50W 4A 600V MTP4N80 50W 4A 800V MTP5P25 75W 5A 250V MTP5N45 75W 5A 450V MTP5N50 75W 5A 500V MTP6N60 125W 6A 600V MTP6N60E 125W 6A 600V RFP50N05 132W 50A 50V RFP50N05L 110W 50A 50V 型号反压V 电流A 功率W D1175* 1500V 5A 100WD1279 1500V 10A 50WD1391* 1500V 5A 80WD1398* 1500V 5A 50WD1403 1500V 6A 120WD1426* 1500V 3.5A 80WD1427* 1500V 5A 80WD1428* 1500V 6A 80WD1429* 1500V 2.5A 80WD1431 1500V 5A 80WD1432* 1500V 6A 80WD1433* 1500V 7A 80WD1439* 1500V 3A 50WD1453 1500V 3A 50WD1497* 1500V 6A 50WD1554* 1500V 3.5A 40WD1555* 1500V 5A 50WD1556* 1500V 6A 50WD1651* 1500V 5A 60WD1652* 1500V 6A 60WD1710 1500V 6A 100WD1878* 1500V 6A 50WD1879* 1500V 6A 60WD1880* 1500V 8A 70WD1881* 1500V 10A 70WD1884 1500V 5A 60WD1885 1500V 6A 60W型号反压V 电流A 功率WD1887 1500V 10A 70WD1910* 1500V 3A 40WD1959 1400V 10A 50WD2125* 1500V 5A 50WD2251* 1500V 7A 60WD2252 1500V 7A 60WD2253* 1700V 6A 50WD2334 1500V 5A 80WD2335 1500V 7A 100W型号P/N 电压V 电流A 功率W A940 P 150V 1.5A 25WD1271 N 150V 7A 40WC2073 N 150V 1.5A 25WD1273A N 100V 3A 40WC3296 150V 1.5A 20WD1266 N 80V 3A 35WD669 180V 1.5AD1264A N 200V 2A 30WD880 60V 3A 30WD1309 N 150V 8A 40WD401 200V 2A 20WD1365 N 800V 3A 40WD882 40V 3A 10WD1415 N 100V 7A 40W5609 50V 0.8A 0.625WD1499 N 100V 5A 40WD1762 60V 3A 25WD2025 N 100V 8A 30WD1763 120V 1.5A 20WTIP102 N 100V 8A 80WTIP41C 100V 5A 65WTIP122 100V 5A 65WMJE13003 N 400V 1.5A 40WC2335 N 400V 7A 40WMJE13005 N 400V 4A 75WC3148 N 800V 3A 40WMJE13007 N 400V 8A 80WC3309 N 400V 2A 20W型号P/N 电压V 电流A 功率W MJE13009 N 400 12 100WC3310 N 400V 5A 30WC4004 N 800V 1A 30WC388A N 25V 0.02AC2233 N 200V 4A 40WC536 N 40V 0.1A 0.2WC2373 N 200V 7.5A 40WC945 N 60V 0.1A 0.25WC3852A N 100V 3A 25WC752 N 30V 0.1A 0.1WC4834 N 400V 8A 45WC1047 N 30V 0.02AC1162 N 35V 2.5A 10WC1213 N 50V 0.5A 0.4WD313 N 60V 3A 30WC1360 N 50V 0.05A 1WC1383 N 30V 1A 1WD1071 N 450V 6A 40WC1473 N 300V 0.07A 0.75W型号 N/P 电压V 电流A 功率W 备注及用途TOS BUW11A N 1000V 5A 100W 电源TOS BUW12A N 1000V 10A 125W 电源TOS BUW13A N 1000V 15A 175W 电源TOS BU2508AF N 1500V 8A 50W 电源TOS BU2508DF N 1500V 8A 50W 行TOS BU2508AX N 1500V 8A 50W 电源TOS BU2508DX N 1500V 8A 50W 行TOS BU2520AF N 1500V 10A 50W 电源TOS BU2520DF N 1500V 10A 50W 行TOS BU2520AX N 1500V 10A 50W 电源/行TOS BU2520DX N 1500V 10A 60W 行TOS BU2522AX N 1500V 10A 60W 电源/行TOS BU2527AX N 1500V 12A 60W 电源/行TOS BU2527DX N 1500V 12A 60W 行TOS C4236 N 1200V 6A 100W 电源TOS C4237 N 1200V 10A 50W 电源TOS D1541 N 1500V 3A 50W 行TOS C4111 N 1500V 10A 150W 电源TOS MN650 N 1500V 5A 80W 电源TOS C4058 N 600V 10A 100W 电源TOS D2333 N 1500V 5A 80W 行TOS D2334 N 1500V 5A 80W 电源TOS D2335 N 1500V 7A 100W 行TOS C4706 N 900V 14A 130W 电源ST BUH715N N 1500V 10A 60W 电源ST C3927 N 900V 10A 120W 电源ST C3679 N 900V 5A 100W 电源ST C5287 N 900V 5A 80W 电源型号P/N 电压V 电流A 功率W 备注及用途D2445 N 1500V 6A 50WC4745 N 1500V 6A 50W 电源C4746 N 1500V 8A 50W 电源C5250 N 1500V 8A 50W 行C5207A N 1500V 10A 50W 电源D2300 N 1500V 5A 50W 行C4297 N 500V 12A 75W 电源C4927 N 1500V 8A 50W 行D1959 N 1400V 10A 50W 电源C4589 N 1500V 10A 50W 电源C4877 N 1500V 8A 50W 行KSD5072 N 1500V 5A 60W 行IRFBC40R 600V 6.2A 125WKSC5803 N 1500V 7A 50W 行KSC5386 N 1500V 7A 50W 行IRF530N 100V 15A 80WKSC5088 N 1500V 8A 50W 电源IRF9530N 100V 13A 75WKSD5702 N 1500V 6A 70W 行IRF540N 100V 27A 94WIRF9540N 100V 19A 94WBUS13A N 1000V 15A 175W 电源IRF610 200V 3.3A 43WBUS14A N 1000V 30A 250W 电源IRF9610 200V 1.8A 20WBUV48A N 1000V 15A 150W 电源IRF620 200V 5A 40WC3552 N 1100V 12A 150W 电源型号P/N 电压V 电流A 功率W 备注及用途IRF9620 200V 5A 40WC5386 N 1500V 8A 50W 电源IRF630 200V 9A 75WC4119 N 1500V 15A 250W 达林顿+阻尼IRF9630 200V 6.5A 75WIRF640 200V 18A 125WIRF9640 200V 11A 125W IRF730 400V 5.5A 75W IRF740 400V 10A 125WBC327 P 50V 0.8A 0.625WBC337 N 50V 0.8A 0.625WBC328 P 30V 0.8A 0.625WBC338 N 30V 0.8A 0.625WBC546 N 80V 0.1A 0.5WBC547 N 50V 0.1A 0.5WBC558 N 30V 0.1A 0.5WBC556 P 80V 0.1A 0.5WBC557 P 50V 0.1A 0.5W 9011 N 50V 0.03A 0.4W 9012 P 40V 0.5A 0.625W 9013 N 40V 0.5A 0.625W 9014 N 50V 0.1A 0.45W 9015 P 50V 0.1A 0.45W 9016 N 30V 0.025A 0.4W 9018 N 30V 0.05A 0.4W 8050 N 40V 1.5A 1W8550 P 40V 1.5A 1W2N5551 N 180V 0.6A 0.625W 2N5401 P 180V 0.6A 0.625W。

全系列场效应管参数

全系列场效应管参数K2843 600V 10A 45W N07N03L 30V 80A 150W N10N20 10A 200V N 沟道MOS管10N60 10A 600V11N80 11A 800V 156W11P06 60V 9.4A P沟道直插13N60 13A 600V N 沟道15N03L 30V 42A 83W N2N7000 60V 0.2A 0.35W N2N7000 60V 0.2A 0.35W N40N03H 30V 40A N4232 内含P沟道,N沟道MOS管各一,4532M 内含P沟道,N沟道MOS管各一,50N03L(SD 30V 47A 50W N 沟道小贴片MOS 55N03 25V 55A 103W5N90 5A 900V5P25 250V 5A6030LX 30V 52A 42W N603AL 30V 25A 60W N 沟道小贴片MOS6A60 600V 6A N6N70 700V 6A N6P25 250V 6A70L0270N06 70A 60V 125W7N60 600V 7A N,铁7N70 7A 700V85L028N25 250V ,8A ,同IRF63495N03 25V 75A 125W9916H 18V 35A 58W 小贴片，全新9N60 9A 600V9N70 9A 700VAF4502CS 内含P沟道，N沟道MOS管各一A04403 30V 6.1A 单P沟道8脚贴片A04404 30V 8.5A 单N沟道8脚贴片A04405 30V 6A 3W 单P沟道8脚贴片A04406 30V,11.5A,单N沟道,8脚贴A04407 30V 12A 3W 单P沟道,8脚贴片A04407 30V 12A 3W 单P沟道,8脚贴片A04408 30V 12A 单N沟道,8脚贴片A04409 30V 15A P沟道场效应,8脚A04410 30V 18A 单N沟道8脚贴片A04411 30V 8A 3W P沟道场效应,8脚A04413 30V 15A 3W 单P沟道,8脚贴片A04413 30V 15A 3W 单P沟道,8脚贴片A04414 30V,8.5A,3WM 单N沟道，8脚A04418 30V 11.5A N沟道8脚贴片A04422 30V 11A N 沟道8脚贴片A04423 30V 15A 3.1W 单P沟道,8脚贴A04600 内含P沟道，N沟道MOS管各一A0D405 30V，18A，P高压板MOS管贴A0D408 30V，18A，P高压板MOS管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D420 30V,10A,N高压板MOS管贴A0D442 60V，38/27A，N 高压板MOS管贴A0D442 60V38/27A,N高压板MOS管贴A0D444 60V,12A,N 高压板MOS管贴A0P600 内含P,N沟道各1,30V 7.5AA0P605 内含P,N沟道各1,30V 7.5AA0P607 内含P、N沟道各1，60V 4。

常用IR公司MOSFET

98
8
IRF3415 N型沟道 150
43
42
IRF3710 N型沟道 100
57
23
IRF4905 P型沟道 -55
-74
20
IRF530 N型沟道 100
17
90
IRF5305 P型沟道 -55
-31
60
IRF630 N型沟道 200
9.5
300
IRF640 N型沟道 200
18
150
IRF7413 N型沟道 30
-18
0.14
63 TO-220, TO-263, TO-262
38
TO-220, TO-263
61
TO-220, TO-263
11
TO-220, TO-263
29
TO-220, TO-263
19 TO-220, TO-263, TO-262
34 TO-220, TO-263, TO-262
ID @25℃ (A)
RDS(on) (Ω)
IRF024 N型沟道 60
14
0.1
IRF530 N型沟道 100
14
0.16
IRF610 N型沟道 200
3.3
1.5
IRF620 N型沟道 200
5.2
0.8
IRF630 N型沟道 200
9
0.4
IRF634 N型沟道 250
8.1
0.45
IRF640 N型沟道 200
封装
TO-252, TO-251 TO-220, TO-263 TO-220, TO-263 TO-220, TO-263 TO-220, TO-263 TO-220, TO-263, TO-262 TO-220, TO-263, TO-262 TO-220, TO-263, TO-262 TO-220, TO-263, TO-262 TO-220, TO-263, TO-262 TO-220, TO-263, TO-262 TO-220, TO-263, TO-262

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