RHRP8120;中文规格书,Datasheet资料

RHRP8120 1200 1200 1200 8
16
100
75 20 -65 to 175
UNITS V V V A
A
A
W mJ oC
©2002 Fairchild Semiconductor Corporation
/
RHRP8120 Rev. B
RHRP8120
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
Symbol
K
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <55ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated • Planar Construction
-
-
100
µA
-
-
500
µA
trr
IF = 1A, dIF/dt = 200A/µs
-
-
55
ns
IF = 8A, dIF/dt = 200A/µs
-
-
70
ns
ta
IF = 8A, dIF/dt = 200A/µs
-
30
-
ns
tb
IF = 8A, dIF/dt = 200A/µs
-
20
-
ns
QRR
IF = 8A, dIF/dt = 200A/µs
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
10
100oC
1
25oC 0.1
0.01
0.001 0
200
400
600
800
1000
VR, REVERSE VOLTAGE (V)
1200
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
Formerly developmental type TA49096.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRP8120
TO-220AC
RHRP8120
NOTE: When ordering, use the entire part number.
L
CURRENT SENSE
Q1
DUT
R
+ VDD
VDD
-
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT
dIF
IF
dt
0
trr
ta
tb
0.25 IRM IRM
FIGURE 9. trr WAVEFORMS AND DEFINITIONS
160
175
TC, CASE TEMPERATURE (oC)
FIGURE 6. CURRENT DERATING CURVE
CJ, JUNCTION CAPACITANCE (pF)
100
80
60
40
20
0
0
50
100
150
200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
VF
IF = 8A
IF = 8A, TC = 150oC
-
-
3.2
V
-
-
2.6
V
IR
VR = 1200V
VR = 1200V, TC = 150oC
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz)
trr
ta tb
1
4
8
IF, FORWARD CURRENT (A)
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT
IF(AV), AVERAGE FORWARD CURRENT (A)
10
8 DC
6 SQ. WAVE
4
2
0
100
115
130
145
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Applications
• Switching Power Supplies • Power Switching Circuits • General Purpose
Packaging
JEDEC TO-220AC
CATHODE (FLANGE)
ANODE CATHODE
A
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
L
VGE
t1 t2
DUT CURRENT
RG
SENSE
+
IGBT
- VDD
FIGURE 8. trr TEST CIRCUIT
IMAX = 1A L = 40mH
R < 0.1Ω EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
80
60 trr
40 ta
20ห้องสมุดไป่ตู้
tb
0
0.5
1
4
8
IF, FORWARD CURRENT (A)
FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
t, RECOVERY TIMES (ns)
120 100
80 60 40 20 0
0.5
TC = 175oC, dIF/dt = 200A/µs
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified (TC = 140oC)
©2002 Fairchild Semiconductor Corporation
/
RHRP8120 Rev. B
RHRP8120 Typical Performance Curves (Continued)
t, RECOVERY TIMES (ns)
60 TC = 25oC, dIF/dt = 200A/µs
-
165
-
nC
CJ RθJC
VR = 10V, IF = 0A
-
25
-
pF
-
-
2
oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse Recovery Charge. CJ = Junction Capacitance. RθJC = Thermal resistance junction to case. pw = Pulse Width.
50
40 trr
30
ta 20
tb 10
0
0.5
1
4
8
IF, FORWARD CURRENT (A)
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
t, RECOVERY TIMES (ns)
100 TC = 100oC, dIF/dt = 200A/µs
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.
Data Sheet
January 2002
RHRP8120
8A, 1200V Hyperfast Diode
The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
Forward
Current
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.I F(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz)
D = Duty Cycle.
Typical Performance Curves
40
500
175oC
100
IF, FORWARD CURRENT (A) IR, REVERSE CURRENT (µA)
10
175oC 100oC 25oC 1
0.5
0
1
2
3
4
5
VF, FORWARD VOLTAGE (V)
©2002 Fairchild Semiconductor Corporation
/
RHRP8120 Rev. B
RHRP8120
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt t1 AND t2 CONTROL IF