B82799_00中文资料

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B82721K2362N1;B82721K2701N20;B82721K2401N20;B82721K2401N21;B82721K2202N1;中文规格书,Datasheet资料

Dimensional drawings and pin configurations Horizontal version (B82721A)
B82721A/J/K
Vertical version (B82721J)
Vertical version (B82721K)
15±0.2
13.2 max.
1) UL approval with 300 V AC
/ Important notes at the end of this document.
Please read Cautions and warnings and
2
07/12
Power line chokes Current-compensated ring core double chokes
Please read Cautions and warnings and
5
07/12
Power line chokes Current-compensated ring core double chokes
Vertical versions B82721J, B82721K IR A 0.3 0.4 0.4 0.4 0.5 0.5 0.5 0.6 0.7 1.2 1.5 2.0 2.5 2.6 3.6 4.0 6.0 LR mH 47 39 27 39 27 18 15 15 10 6.8 3.3 1.0 0.6 0.4 0.4 0.7 0.2 Lstray,typ H 500 450 300 450 290 250 160 170 110 80 37 13 8 6 6 7 2.5 Rtyp m 2200 2000 1700 2000 1100 1400 800 700 550 280 180 80 60 55 35 30 15 TR °C +50 +40 +40 +70 +60 +40 +40 +40 +60 +40 +40 +40 +40 +40 +40 +40 +40 Ordering code Vertical version (J)

ACS II码对照表

93 94 95 96 97 98 9 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127
] ^ _ ' a b c d e f g h i j k l m n o p q r s t u v w x y z { | } ~ del
29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63
gs re us sp ! " # $ % & ` ( ) * + , . / 0 1 2 3 4 5 6 7 8 9 : ; < = > ?
ASCII 码表信息在计算机上是用二进制表示的，这种表示法让人理解就很困难。因此计算机上都配有输入和输出设备，这些设备的主要目的就是，以一种人类可阅读的形式将信息在这些设备上显示出来供人阅读理解。为保证人类和设备，设备和计算机之间能进行正确的信息交换，人们编制的统一的信息交换代码，这就是 ASCII 码表，它的全称是“美国信息交换标准代码”。八进制 00 01 02 03 04 05 06 07 10 11 12 13 14 15 16 17 20 21 22 23 24 25 26 27 30 31 32 33 34 十六进十进制制 00 0 01 1 02 2 03 3 04 4 05 5 06 6 07 7 08 8 09 9 0a 10 0b 11 0c 12 0d 13 0e 14 0f 15 10 16 11 17 12 18 13 19 14 20 15 21 16 22 17 23 18 24 19 25 1a 26 1b 27 1c 28 字符八进制 nul soh stx etx eot enq ack bel bs ht nl vt ff er so si dle dc1 dc2 dc3 dc4 nak syn etb can em sub esc fs 100 101 102 103 104 105 106 107 110 111 112 113 114 115 116 117 120 121 122 123 124 125 126 127 130 131 132 133 134 十六进制 40 41 42 43 44 45 46 47 48 49 4a 4b 4c 4d 4e 4f 50 51 52 53 54 55 56 57 58 59 5a 5b 5c 十进制 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 @ A B C D E F G H I J K L M N O P Q R S T U V W X Y Z [ \ 字符

B82793S0513N201;B82793C475N265;中文规格书,Datasheet资料

Data and signal line chokesCommon-mode chokes, ring core0.005 … 47 mH, 100 … 1200 mA, 60 °CSeries/Type:B82793C0/S0Date:July 2010¤ EPCOS AG 2010. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.Rated voltage 42 V AC/80 V DCRated inductance 0.005 mH to 47 mH Rated current 100 mA to 1200 mA Construction■Current-compensated double choke ■Ferrite core■LCP case (UL 94 V-0), silicone potting ■Bifilar winding (B82793C0)■Sector winding (B82793S0)Features■High rated currents, reduced components height ■Qualified to AEC-Q200 (L d 4.7 mH)■Suitable for reflow soldering ■RoHS-compatibleFunction■B82793C0:Suppression of asymmetrical interference coupled in on lines,whereas data signals up to some MHz can pass unaffectedly.■B82793S0:Suppression of asymmetrical and symmetrical interference (by L stray )coupled in on lines. The high-frequency portions of the symmetrical data signal are decreased so far that EMC problems can be significantly reduced.Applications■Automotive applications, e.g. CAN bus ■Industrial applications■Types with L R ! 4.7 mH only for telecom applicationsTerminals■Base material CuSn6■Layer composition Ni, Sn ■Hot-dippedMarking■Marking on component: Manufacturer, process location (coded),winding method (coded), ordering code (short form), date of manufacture (YWWD)■Minimum data on reel: Manufacturer, ordering code,L value and tolerance, quantity, date of packing Delivery mode and packing unit■16-mm blister tape, wound on 330-mm reel ■Packing unit: 1500 pcs./reel Common-mode chokes, ring coreDimensional drawing and pin configurationLayout recommendationTaping and packing Blister tapeReelDimensions in mmDimensions in mmCommon-mode chokes, ring coreCommon-mode chokes, ring coreTechnical data and measuring conditionsRated voltage V R42 V AC (50/60 Hz) / 80 V DCRated temperature T R60 °CRated current I R Referred to 50 Hz and rated temperatureRated inductance L R Measured with Agilent 4284A, 0.1 mA, 20 °CMeasuring frequency:L R d 1 mH = 100 kHzL R! 1 mH = 10 kHzInductance is specified per winding.Inductance tolerance r30% (L R d0.47mH), –30/+50% (L R t1mH) at 20 °C Inductance decrease 'L/L 10% at DC magnetic bias with I R, 20 °CStray inductance L stray,typ Measured with Agilent 4284A, 5 mA, 20 °C, typical valuesMeasuring frequency:L R d 11 P H = 1 MHzL R! 11 P H = 100 kHzDC resistance R typ Measured at 20q C, typical values, specified per winding Solderability SnPb:(215 r3) °C, (3 r0.3) sSn96.5Ag3.0Cu0.5:(245 r5) °C, (3 r0.3) sWetting of soldering area t 95%(to IEC 60068-2-58)Resistance to soldering heat(260 r5) °C, (10 r1) s (to IEC 60068-2-58)Climatic category 40/125/56 (to IEC 60068-1)Storage conditions (packaged)–25 °C … +40 °C, d 75% RHWeight Approx. 0.25 gCharacteristics and ordering codes Sample kit available. Ordering code: B82793X001.For more information refer to chapter “Sample kits”.L R mH L stray,typ nH I R mA R typ m :V test V DC, 2 s Ordering code 0.005 40120060250B82793C0502N2010.011 50 80080250B82793C0113N2010.025 60 800110250B82793C0253N2010.0251400 800110250B82793S0253N2010.051 70 800140250B82793C0513N2010.0512300 800140250B82793S0513N2010.10 100 500180250B82793C0104N2010.47 100 700170750B82793C0474N2151.0 70 700140750B82793C0105N2652.2 120 500400750B82793C0225N2654.7 250 400550750B82793C0475N265For telecommunications203001001800750B82793C0206N2654712001003700750B82793C0476N265Common-mode chokes, ring coreInsertion loss D (typical values at |Z| = 50 :, 20 °C)asymmetrical, all branches in parallel (common mode)symmetrical (differential mode)L R = 0.005 mHL R = 0.025 mH (low L stray)L R = 0.011 mHL R = 0.025 mH (high L stray)Common-mode chokes, ring coreInsertion loss D (typical values at |Z| = 50 :, 20 °C)asymmetrical, all branches in parallel (common mode)symmetrical (differential mode)L R = 0.051 mH (low L stray) L R = 0.10 mH L R = 0.051 mH (high L stray) L R = 0.47 mHCommon-mode chokes, ring coreInsertion loss D (typical values at |Z| = 50 :, 20 °C)asymmetrical, all branches in parallel (common mode)symmetrical (differential mode)L R =1.0 mH L R = 4.7 mH L R = 2.2 mH L R = 20 mHCommon-mode chokes, ring coreInsertion loss D (typical values at |Z| = 50 :, 20 °C)asymmetrical, all branches in parallel (common mode)symmetrical (differential mode)L R = 47 mH Current derating I op/I R versus ambient temperatureCommon-mode chokes, ring coreRecommended reflow soldering curvePb containing solder material (based on CECC 00802 edition 2)Pb-free solder material (based on JEDEC J-STD 020C)Time from 25 °C to T 4: max 300 s Maximal numbers of reflow cycles: 3T 1°C T 2°C T 3°C T 4°C t 1s t 2s t 3s150200217250< 110< 90< 40 @ T 4 –5 °CCommon-mode chokes, ring core分销商库存信息:EPCOSB82793S0513N201B82793C475N265。

8279介绍

8279功能介绍一、8279的基本功能8279是可编程的键盘、显示接口芯片。

它既具有按键处理功能，又具有自动显示功能。

8279内部有键盘FIFO（先进先出堆栈）/传感器，双重功能的8*8=64B RAM，键盘控制部分可控制8*8=64个按键或8*8阵列方式的传感器。

该芯片能自动消抖并具有双键锁定保护功能。

显示RAM容量为16*8，即显示器最大配置可达16位LED数码显示。

（1）数据线DB0→DB7是双向三态数据总线，在接口电路中与系统数据总线相连，用以传送CPU和8279之间的数据和命令。

（2）地址线/CS=0选中8279，当A0=1时，为命令字及状态字地址；当A0=0时，为片内数据地址，故8279芯片占用2个端口地址。

（3）控制线CLK：8279的时钟输入线。

IRQ：中断请求输出线，高电平有效。

/RD、/WR：读、写输入控制线。

SL0---SL3：扫描输出线，用来作为扫描键盘和显示的代码输出或直接输出线。

RL0---RL7：回复输入线，它们是键盘或传感器矩阵的信号输入线。

SHIFT：来自外部键盘或传感器矩阵的输入信号，它是8279键盘数据的次高位即D6位的状态，该位状态控制键盘上/下档功能。

在传感器方式和选通方式中，该引脚无用。

CNTL/S：控制/选通输入线，高电平有效。

键盘方式时，键盘数据最高位（D7）的信号输入到该引脚，以扩充键功能；选通方式时，当该引脚信号上升沿到时，把RL0---RL7的数据存入FIFO RAM中。

OUTA0---OUTA3：通常作为显示信号的高4位输出线。

OUTB0---OUTB3：通常作为显示信号的低4位输出线。

/BD：显示熄灭输出线，低电平有效。

当/BD=0时将显示全熄灭。

二、工作方式8279有三种工作方式：键盘方式、显示方式和传感器方式。

（1）键盘工作方式8279在键盘工作方式时，可设置为双键互锁方式和N键循回方式。

双键互锁方式：若有两个或多个键同时按下时，不管按键先后顺序如何，只能识别最后一个被释放的键，并把该键值送入FIFO RAM中。

AK 98

商标商标Gambro、AK 98、BiCart、CleanCart、Diascan、SoftPac、U 9000、Polyflux、Revaclear 和Evodial 都属于Gambro 集团。

商标Dialox 属于Air Liquide 集团。

商标HASTELLOY 属于Haynes International Inc。

制造商Gambro Lundia ABBox 10101Magistratsvägen 16SE-22010LUNDSweden电话：+4646169000销售代表联系信息（如果有）：如对本手册有任何意见或建议，请联系当地销售代表或制造商。

Operators handbook1用前须知 (1)2机器说明 (17)3操作血液透析装置 (39)4血液透析-双针治疗 (57)5血液透析-单针治疗 (85)6单纯超滤 (93)7图形预制功能 (97)8测量血压（选件） (105)9检查清除率（选件） (111)10消毒和清洁 (117)11对AK98™血液透析装置和WRO系统进行消毒 (131)12维护和操作 (135)13技术数据和规格 (141)14当地法规登记号（如果有） (161)Alarm handbook1报警 (1)2关注信息 (55)HCZHCN12626修订02.2015程序版本1.xx目录1用前须知 (1)1.1阅读操作手册时的重要事项 (2)1.1.1关于本操作手册 (2)1.1.2安全定义 (2)1.1.3值和设置 (2)1.1.4按钮 (2)1.1.5关于屏幕 (2)1.1.6符号 (4)1.2使用前的一般警告和注意事项 (6)1.2.1使用前的一般注意事项 (6)1.2.2责任与免责声明 (8)1.2.3漏电和等电位连接 (8)1.2.4治疗地点 (9)1.2.5中心静脉导管 (9)1.2.6外部电气设备连接 (9)1.2.7如何移动AK98血液透析装置 (9)1.2.8安全须知 (9)1.3预期用途 (10)1.3.1预期用途 (10)1.3.2培训 (11)1.3.3消毒和功能检查 (11)1.3.4进水要求 (11)1.3.5中央输送系统的卫生质量 (11)1.3.6配制透析液 (11)1.4附件 (12)1.4.1浓缩液、化学消毒剂、附件和消耗品 (12)1.4.2浓缩液 (12)1.4.3化学消毒剂 (13)1.4.4血液管路 (13)1.4.5附件 (13)1.4.6超滤器（选件） (13)1.4.7透析器 (14)1.4.8血压测量附件 (14)1.5术语 (15)1.5.1术语 (15)2机器说明 (17)2.1血液部分 (18)2.1.1血液部分的部件 (18)2.1.2血液部分部件详细信息 (19)2.2液体部分 (26)2.2.1液体部分的部件 (26)2.2.2液体部分组件详细信息 (27)HCZHCN12626修订02.2015程序版本1.xx2.3背面的部件 (32)2.3.1背面的部件 (32)2.3.2背面部件详细信息 (33)3操作血液透析装置 (39)3.1操作员位置 (40)3.1.1操作员位置 (40)3.2打开和关闭血液透析装置 (40)3.2.1主开关 (40)3.2.2开/关按钮 (40)3.3指示灯和按钮 (40)3.3.1指示灯 (40)3.3.2操作员面板上的按钮 (41)3.4屏幕 (42)3.4.1屏幕概述 (42)3.4.2静脉和动脉压力控制(1,2) (43)3.4.3机器状态指示灯(3) (43)3.4.4时间(4) (43)3.4.5血液路径(5) (44)3.4.6液体流路(6) (44)3.4.7旁路路径 (44)3.4.8血压区(7,8)（选件） (44)3.4.9清除率区(9,10)（选件） (44)3.4.10治疗浏览(11–15) (44)3.4.11报警选项卡(16) (45)3.4.12信息选项卡(17) (45)3.4.13信息字段(18) (45)3.4.14预冲按钮(19) (45)3.4.15回血按钮(20) (45)3.4.16消毒按钮(21) (46)3.4.17血液按钮(22) (47)3.4.18液体按钮(23) (48)3.4.19液体旁路按钮(24) (50)3.4.20超滤按钮(25) (51)3.4.21治疗历史记录页面(26) (51)3.4.22状态栏(27) (51)3.4.23服务菜单 (51)3.5浓缩液待命模式 (52)3.5.1关于暂停透析液 (52)3.5.2手动暂停透析液的配制 (53)3.5.3恢复透析液的配制 (53)3.5.4自动暂停透析液配制 (53)3.6在电源故障期间操作机器 (53)3.6.1在有备用电池的情况下出现电源故障 (53)3.6.2在没有备用电池的情况下出现电源故障 (53)3.6.3手动为病人回血 (54)HCZHCN12626修订02.2015程序版本1.xx3.7在治疗过程中更换透析器和血路管 (54)3.8超滤控制 (55)4血液透析-双针治疗 (57)4.1基本功能 (58)4.2开始双针治疗 (58)4.2.1治疗前检查事项 (58)4.2.2开始功能检查 (58)4.2.3设置血液透析装置 (59)4.2.4连接动脉血液管路 (61)4.2.5连接静脉血液管路 (66)4.2.6连接肝素注射器 (71)4.2.7预冲透析循环 (73)4.2.7.1预冲说明 (73)4.2.7.2手动预冲 (73)4.2.7.3辅助预冲 (75)4.2.8预冲选项 (76)4.2.8.1额外预冲 (76)4.2.8.2再循环 (76)4.2.9设置治疗时间 (77)4.2.10设置超滤量 (77)4.2.11设置肝素值 (78)4.2.12连接病人 (79)4.2.13开始治疗 (81)4.3结束双针治疗 (82)4.3.1结束治疗 (82)4.3.2确认断开病人 (83)4.3.3机器后期处理 (83)5血液透析-单针治疗 (85)5.1基本功能 (86)5.2准备 (86)5.3连接病人 (89)5.4开始治疗 (90)5.5结束单针治疗 (91)6单纯超滤 (93)6.1基本功能 (94)6.2处理单纯超滤 (94)6.2.1启用单纯超滤 (94)6.2.2如何再添加一个单纯超滤量 (94)6.2.3停止单纯超滤 (95)6.3其他信息 (95)6.3.1肝素 (95)HCZHCN12626修订02.2015程序版本1.xx7图形预制功能 (97)7.1一般信息 (98)7.2钠和碳酸氢盐浓度曲线 (98)7.3超滤率曲线 (98)7.4图形预制功能设置/启用 (101)7.5无预设模型的图形预制功能 (102)7.5.1无预设模型的超滤图形预制功能 (102)7.5.2无预设模型的钠图形预制功能 (103)7.5.3无预设模型的碳酸氢盐图形预制功能 (103)7.6设置和启用带预设模型的图形预制功能 (104)8测量血压（选件） (105)8.1血压监测仪(BPM) (106)8.2血压袖带 (106)8.3直接血压测量 (107)8.4间隔时间血压测量 (108)8.5测量历史记录 (108)8.6设置报警限值 (109)8.7血压测量期间的病人护理 (109)8.7.1所有病人 (109)8.7.2高血压病人 (110)8.7.3心律不齐的病人 (110)9检查清除率（选件） (111)9.1清除率测量(Diascan™)如何工作 (112)9.2清除率测量检查内容 (112)9.3检查K和Kt (112)9.4检查Kt/V (113)9.5测量历史记录 (114)9.6设置Kt/V目标值 (114)9.7设置K或Kt/V过低的报警 (115)9.8影响测量的因素 (115)10消毒和清洁 (117)10.1消毒和清洁–一般信息 (118)10.2启动前的检查事项 (118)10.3加热消毒 (119)10.3.1加热消毒说明 (119)10.3.2清洁和脱钙 (119)10.3.3启动加热消毒 (119)HCZHCN12626修订02.2015程序版本1.xx10.3.4启动使用CleanCart™清洗棒的加热消毒 (120)10.3.5启动使用液体柠檬酸的加热消毒 (120)10.3.6启动使用液体柠檬酸的短时间加热消毒 (120)10.3.7整合加热消毒 (121)10.3.7.1整合加热消毒 (121)10.3.7.2安排加热消毒方案 (121)10.3.7.3关闭已安排的方案 (122)10.3.8使用WRO300H单元进行整合加热消毒 (122)10.3.8.1使用WRO300H单元进行整合加热消毒 (122)10.4化学消毒 (122)10.4.1有关化学消毒 (122)10.4.2启动化学消毒 (123)10.4.3启动中央化学消毒 (123)10.4.4对WRO单元执行化学消毒方案 (124)10.4.5消毒剂残留物检测 (124)10.4.6消毒历史记录 (124)10.4.7关于化学消毒剂 (125)10.5冲洗和排水 (125)10.5.1启动冲洗或排水 (125)10.5.2安排冲洗方案 (125)10.5.3关闭特定天的冲洗方案 (126)10.6存放灌有化学消毒剂的机器 (126)10.6.1在血液透析装置中灌注化学消毒剂 (126)10.6.2开始使用灌有化学消毒剂的血液透析装置 (127)10.7参考 (127)10.7.1消毒剂、脱钙剂和清洁剂-特征 (127)10.7.2清洁和消毒安排 (128)10.7.3流量路径 (129)11对AK98™血液透析装置和WRO系统进行消毒 (131)11.1一般说明 (132)11.2使用WRO300H单元进行整合加热消毒 (132)11.2.1对WRO300H单元进行整合加热消毒的说明 (132)11.2.2安排整合加热消毒 (132)11.2.3手动启动整合加热消毒 (132)11.3对WRO单元执行中央化学消毒方案 (133)11.3.1对WRO单元执行中央化学消毒方案的说明 (133)11.3.2启动WRO单元的中央化学消毒 (133)11.4冲洗设置 (134)11.4.1冲洗设置 (134)HCZHCN12626修订02.2015程序版本1.xx12维护和操作 (135)12.1维护 (136)12.2血泵转子 (136)12.2.1血泵转子的维护 (136)12.2.2清洁血泵转子 (136)12.3清洁漏血探测器 (137)12.4进水管 (137)12.5吸液管 (137)12.6表面和顶部托盘 (138)12.7更换超滤器 (138)12.8存放 (139)12.9服务 (139)12.10丢弃 (139)13技术数据和规格 (141)13.1性能和规格-控制系统 (143)13.1.1预冲 (143)13.1.2血流控制 (143)13.1.3肝素泵 (143)13.1.4血压 (144)13.1.5血压监测仪(BPM) (144)13.1.6透析液准备 (144)13.1.7超滤控制 (145)13.1.8超滤保护 (146)13.1.9图形预制功能 (146)13.1.10Diascan™（选件） (146)13.1.11消毒和清洁-化学消毒 (146)13.1.12消毒和清洁–加热消毒 (147)13.1.13自动加热消毒 (148)13.1.14加热消毒方案（包括WRO300H） (148)13.1.15消毒和清洁-冲洗/排水 (148)13.1.16消毒和清洁-外部清洁 (148)13.1.17供水 (148)13.1.18电源 (149)13.1.19外部设备连接 (150)13.1.20备用电池 (150)13.2性能和规格-监控系统 (150)13.2.1血压监控 (150)13.2.2空气探测 (151)13.2.3因凝血造成的体外血液流失 (151)13.2.4透析液准备 (151)13.2.5超滤控制系统 (151)13.2.6漏血探测 (152)HCZHCN12626修订02.2015程序版本1.xx13.3报警声压 (152)13.3.1报警声压 (152)13.4物理数据 (152)13.4.1尺寸和重量 (152)13.4.2输液支架 (152)13.5与透析液、浓缩液和水接触的材料 (152)13.5.1聚合物 (152)13.5.2金属 (153)13.5.3其它材料 (153)13.6环境数据 (153)13.6.1中国RoHS声明表 (153)13.6.2操作 (153)13.6.3运输和储存 (154)13.6.4电磁环境 (154)13.6.5预期使用寿命 (157)13.6.6能耗 (157)13.7标准 (158)14当地法规登记号（如果有） (161)HCZHCN12626修订02.2015程序版本1.xx1用前须知1.1阅读操作手册时的重要事项 (2)1.1.1关于本操作手册 (2)1.1.2安全定义 (2)1.1.3值和设置 (2)1.1.4按钮 (2)1.1.5关于屏幕 (2)1.1.6符号 (4)1.2使用前的一般警告和注意事项 (6)1.2.1使用前的一般注意事项 (6)1.2.2责任与免责声明 (8)1.2.3漏电和等电位连接 (8)1.2.4治疗地点 (9)1.2.5中心静脉导管 (9)1.2.6外部电气设备连接 (9)1.2.7如何移动AK98血液透析装置 (9)1.2.8安全须知 (9)1.3预期用途 (10)1.3.1预期用途 (10)1.3.2培训 (11)1.3.3消毒和功能检查 (11)1.3.4进水要求 (11)1.3.5中央输送系统的卫生质量 (11)1.3.6配制透析液 (11)1.4附件 (12)1.4.1浓缩液、化学消毒剂、附件和消耗品 (12)1.4.2浓缩液 (12)1.4.3化学消毒剂 (13)1.4.4血液管路 (13)1.4.5附件 (13)1.4.6超滤器（选件） (13)1.4.7透析器 (14)1.4.8血压测量附件 (14)1.5术语 (15)1.5.1术语 (15)1.1阅读操作手册时的重要事项1.1.1关于本操作手册这本操作手册提供了正确使用AK200SAK200ULTRA SAK96AK98NewayPrismaflex血液透析装置所需的说明。

UPD780024AGB-xxx-8EU中文资料

Document No. U14042EJ4V0DS00 (4th edition) Date Published December 2002 N CP(K) Printed in Japan
The mark
shows major revised points.
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©
©
2000
µPD780021A, 780022A, 780023A, 780024A, 780021AY, 780022AY, 780023AY, 780024AY
The µPD780021A, 780022A, 780023A, and 780024A are members of the µPD780024A Subseries of the 78K/0 Series. Only selected functions of the existing µPD78054 Subseries are provided, and the serial interface is enhanced. The µPD780021AY, 780022AY, 780023AY, and 780024AY are the µPD780024A Subseries with a multimaster supporting I2C bus interface, which makes them suitable for AV equipment. Flash memory versions, the µPD78F0034A, 78F0034B, 78F0034AY, and 78F0034BY, that can operate in the same power supply voltage range as the mask ROM versions, and various development tools, are also available. Detailed function descriptions are provided in the following user’s manuals. Be sure to read them before designing. µPD780024A, 780034A, 780024AY, 780034AY Subseries User’s Manual: U14046E 78K/0 Series Instructions User’s Manual: U12326E

AD09库中英参照

AD09库中英参照net 网络标号BELL 铃,钟BRIDEG 1 整流桥(二极管)BUZZER 蜂鸣器BUZZER 蜂鸣器CAP 电容DIODE 二极管INDUCTOR 电感LAMP 灯泡LED 发光二极管NPN NPN三极管PNP 三极管SW-PB 开关DPY_7-SEG_DP 数码管RES1.2 电阻b 工具条选择eea 取消所有选择状态ctrl+del 删除pw 画导线pb 画总线pu画总线分支线pn 设置网络标号_________________________________________________________________________ 原理图常用库文件：Miscellaneous Devices.ddbDallas Microprocessor.ddbIntel Databooks.ddbProtel DOS Schematic Libraries.ddbPCB元件常用库：Advpcb.ddbGeneral IC.ddbMiscellaneous.ddb部分分立元件库元件名称及中英对照AND 与门ANTENNA 天线BATTERY 直流电源BELL 铃,钟BVC 同轴电缆接插件BRIDEG 1 整流桥(二极管)BRIDEG 2 整流桥(集成块)BUFFER 缓冲器BUZZER 蜂鸣器CAP 电容CAPACITOR 电容CAPACITOR POL 有极性电容CAPV AR 可调电容CIRCUIT BREAKER 熔断丝COAX 同轴电缆CON 插口CRYSTAL 晶体整荡器DB 并行插口DIODE 二极管DIODE SCHOTTKY 稳压二极管DIODE V ARACTOR 变容二极管DPY_3-SEG 3段LEDDPY_7-SEG 7段LEDDPY_7-SEG_DP 7段LED(带小数点) ELECTRO 电解电容FUSE 熔断器INDUCTOR 电感INDUCTOR IRON 带铁芯电感INDUCTOR3 可调电感JFET N N沟道场效应管JFET P P沟道场效应管LAMP 灯泡LAMP NEDN 起辉器LED 发光二极管METER 仪表MICROPHONE 麦克风MOSFET MOS管MOTOR AC 交流电机MOTOR SERVO 伺服电机NAND 与非门NOR 或非门NOT 非门NPN NPN三极管NPN-PHOTO 感光三极管OPAMP 运放OR 或门PHOTO 感光二极管PNP 三极管NPN DAR NPN三极管PNP DAR PNP三极管POT 滑线变阻器PELAY-DPDT 双刀双掷继电器RES1.2 电阻RES3.4 可变电阻RESISTOR BRIDGE ? 桥式电阻RESPACK ? 电阻SCR 晶闸管PLUG ? 插头PLUG AC FEMALE 三相交流插头SOCKET ? 插座SOURCE CURRENT 电流源SOURCE VOLTAGE 电压源SPEAKER 扬声器SW ? 开关SW-DPDY ? 双刀双掷开关SW-SPST ? 单刀单掷开关SW-PB 按钮THERMISTOR 电热调节器TRANS1 变压器TRANS2 可调变压器TRIAC ? 三端双向可控硅TRIODE ? 三极真空管V ARISTOR 变阻器ZENER ? 齐纳二极管DPY_7-SEG_DP 数码管SW-PB 开关74系列：74LS00 TTL 2输入端四与非门74LS01 TTL 集电极开路2输入端四与非门74LS02 TTL 2输入端四或非门74LS03 TTL 集电极开路2输入端四与非门74LS122 TTL 可再触发单稳态多谐振荡器74LS123 TTL 双可再触发单稳态多谐振荡器74LS125 TTL 三态输出高有效四总线缓冲门74LS126 TTL 三态输出低有效四总线缓冲门74LS13 TTL 4输入端双与非施密特触发器74LS132 TTL 2输入端四与非施密特触发器74LS133 TTL 13输入端与非门74LS136 TTL 四异或门74LS138 TTL 3-8线译码器/复工器74LS139 TTL 双2-4线译码器/复工器74LS14 TTL 六反相施密特触发器74LS145 TTL BCD—十进制译码/驱动器74LS15 TTL 开路输出3输入端三与门74LS150 TTL 16选1数据选择/多路开关74LS151 TTL 8选1数据选择器74LS153 TTL 双4选1数据选择器74LS154 TTL 4线—16线译码器74LS155 TTL 图腾柱输出译码器/分配器74LS156 TTL 开路输出译码器/分配器74LS157 TTL 同相输出四2选1数据选择器74LS158 TTL 反相输出四2选1数据选择器74LS16 TTL 开路输出六反相缓冲/驱动器74LS160 TTL 可预置BCD异步清除计数器74LS161 TTL 可予制四位二进制异步清除计数器74LS162 TTL 可预置BCD同步清除计数器74LS163 TTL 可予制四位二进制同步清除计数器74LS164 TTL 八位串行入/并行输出移位寄存器74LS165 TTL 八位并行入/串行输出移位寄存器74LS166 TTL 八位并入/串出移位寄存器74LS169 TTL 二进制四位加/减同步计数器74LS17 TTL 开路输出六同相缓冲/驱动器74LS170 TTL 开路输出4×4寄存器堆74LS173 TTL 三态输出四位D型寄存器74LS174 TTL 带公共时钟和复位六D触发器74LS175 TTL 带公共时钟和复位四D触发器74LS180 TTL 9位奇数/偶数发生器/校验器74LS181 TTL 算术逻辑单元/函数发生器74LS185 TTL 二进制—BCD代码转换器74LS190 TTL BCD同步加/减计数器74LS191 TTL 二进制同步可逆计数器74LS192 TTL 可预置BCD双时钟可逆计数器74LS193 TTL 可预置四位二进制双时钟可逆计数器74LS194 TTL 四位双向通用移位寄存器74LS195 TTL 四位并行通道移位寄存器74LS196 TTL 十进制/二-十进制可预置计数锁存器74LS197 TTL 二进制可预置锁存器/计数器74LS20 TTL 4输入端双与非门74LS21 TTL 4输入端双与门74LS22 TTL 开路输出4输入端双与非门74LS221 TTL 双/单稳态多谐振荡器74LS240 TTL 八反相三态缓冲器/线驱动器74LS241 TTL 八同相三态缓冲器/线驱动器74LS243 TTL 四同相三态总线收发器74LS244 TTL 八同相三态缓冲器/线驱动器74LS245 TTL 八同相三态总线收发器74LS247 TTL BCD—7段15V输出译码/驱动器74LS248 TTL BCD—7段译码/升压输出驱动器74LS249 TTL BCD—7段译码/开路输出驱动器74LS251 TTL 三态输出8选1数据选择器/复工器74LS253 TTL 三态输出双4选1数据选择器/复工器74LS256 TTL 双四位可寻址锁存器74LS257 TTL 三态原码四2选1数据选择器/复工器74LS258 TTL 三态反码四2选1数据选择器/复工器74LS259 TTL 八位可寻址锁存器/3-8线译码器74LS26 TTL 2输入端高压接口四与非门74LS260 TTL 5输入端双或非门74LS266 TTL 2输入端四异或非门74LS27 TTL 3输入端三或非门74LS273 TTL 带公共时钟复位八D触发器74LS279 TTL 四图腾柱输出S-R锁存器74LS28 TTL 2输入端四或非门缓冲器74LS283 TTL 4位二进制全加器74LS290 TTL 二/五分频十进制计数器74LS293 TTL 二/八分频四位二进制计数器74LS295 TTL 四位双向通用移位寄存器74LS298 TTL 四2输入多路带存贮开关74LS299 TTL 三态输出八位通用移位寄存器74LS30 TTL 8输入端与非门74LS32 TTL 2输入端四或门74LS322 TTL 带符号扩展端八位移位寄存器74LS323 TTL 三态输出八位双向移位/存贮寄存器74LS33 TTL 开路输出2输入端四或非缓冲器74LS347 TTL BCD—7段译码器/驱动器74LS352 TTL 双4选1数据选择器/复工器74LS353 TTL 三态输出双4选1数据选择器/复工器74LS365 TTL 门使能输入三态输出六同相线驱动器74LS365 TTL 门使能输入三态输出六同相线驱动器74LS366 TTL 门使能输入三态输出六反相线驱动器74LS367 TTL 4/2线使能输入三态六同相线驱动器74LS368 TTL 4/2线使能输入三态六反相线驱动器74LS37 TTL 开路输出2输入端四与非缓冲器74LS373 TTL 三态同相八D锁存器74LS374 TTL 三态反相八D锁存器74LS375 TTL 4位双稳态锁存器74LS377 TTL 单边输出公共使能八D锁存器74LS378 TTL 单边输出公共使能六D锁存器74LS379 TTL 双边输出公共使能四D锁存器74LS38 TTL 开路输出2输入端四与非缓冲器74LS380 TTL 多功能八进制寄存器74LS39 TTL 开路输出2输入端四与非缓冲器74LS390 TTL 双十进制计数器74LS393 TTL 双四位二进制计数器74LS40 TTL 4输入端双与非缓冲器74LS42 TTL BCD—十进制代码转换器74LS352 TTL 双4选1数据选择器/复工器74LS353 TTL 三态输出双4选1数据选择器/复工器74LS365 TTL 门使能输入三态输出六同相线驱动器74LS366 TTL 门使能输入三态输出六反相线驱动器74LS367 TTL 4/2线使能输入三态六同相线驱动器74LS368 TTL 4/2线使能输入三态六反相线驱动器74LS37 TTL 开路输出2输入端四与非缓冲器74LS373 TTL 三态同相八D锁存器74LS374 TTL 三态反相八D锁存器74LS375 TTL 4位双稳态锁存器74LS377 TTL 单边输出公共使能八D锁存器74LS378 TTL 单边输出公共使能六D锁存器74LS379 TTL 双边输出公共使能四D锁存器74LS38 TTL 开路输出2输入端四与非缓冲器74LS380 TTL 多功能八进制寄存器74LS39 TTL 开路输出2输入端四与非缓冲器74LS390 TTL 双十进制计数器74LS393 TTL 双四位二进制计数器74LS40 TTL 4输入端双与非缓冲器74LS42 TTL BCD—十进制代码转换器74LS447 TTL BCD—7段译码器/驱动器74LS45 TTL BCD—十进制代码转换/驱动器74LS450 TTL 16:1多路转接复用器多工器74LS451 TTL 双8:1多路转接复用器多工器74LS453 TTL 四4:1多路转接复用器多工器74LS46 TTL BCD—7段低有效译码/驱动器74LS460 TTL 十位比较器74LS461 TTL 八进制计数器74LS465 TTL 三态同相2与使能端八总线缓冲器74LS466 TTL 三态反相2与使能八总线缓冲器74LS467 TTL 三态同相2使能端八总线缓冲器74LS468 TTL 三态反相2使能端八总线缓冲器74LS469 TTL 八位双向计数器74LS47 TTL BCD—7段高有效译码/驱动器74LS48 TTL BCD—7段译码器/内部上拉输出驱动74LS490 TTL 双十进制计数器74LS491 TTL 十位计数器74LS498 TTL 八进制移位寄存器74LS50 TTL 2-3/2-2输入端双与或非门74LS502 TTL 八位逐次逼近寄存器74LS503 TTL 八位逐次逼近寄存器74LS51 TTL 2-3/2-2输入端双与或非门74LS533 TTL 三态反相八D锁存器74LS534 TTL 三态反相八D锁存器74LS54 TTL 四路输入与或非门74LS540 TTL 八位三态反相输出总线缓冲器74LS55 TTL 4输入端二路输入与或非门74LS563 TTL 八位三态反相输出触发器74LS564 TTL 八位三态反相输出D触发器74LS573 TTL 八位三态输出触发器74LS574 TTL 八位三态输出D触发器74LS645 TTL 三态输出八同相总线传送接收器74LS670 TTL 三态输出4×4寄存器堆74LS73 TTL 带清除负触发双J-K触发器74LS74 TTL 带置位复位正触发双D触发器74LS76 TTL 带预置清除双J-K触发器74LS83 TTL 四位二进制快速进位全加器74LS85 TTL 四位数字比较器74LS86 TTL 2输入端四异或门74LS90 TTL 可二/五分频十进制计数器74LS93 TTL 可二/八分频二进制计数器74LS95 TTL 四位并行输入\\输出移位寄存器74LS97 TTL 6位同步二进制乘法器CD系列：：CD4000 双3输入端或非门+单非门TICD4001 四2输入端或非门HIT/NSC/TI/GOLCD4002 双4输入端或非门NSCCD4006 18位串入/串出移位寄存器NSCCD4007 双互补对加反相器NSCCD4008 4位超前进位全加器NSCCD4009 六反相缓冲/变换器NSCCD4010 六同相缓冲/变换器NSCCD4011 四2输入端与非门HIT/TICD4012 双4输入端与非门NSCCD4013 双主-从D型触发器FSC/NSC/TOSCD4014 8位串入/并入-串出移位寄存器NSCCD4015 双4位串入/并出移位寄存器TICD4016 四传输门FSC/TICD4017 十进制计数/分配器FSC/TI/MOTCD4018 可预制1/N计数器NSC/MOTCD4019 四与或选择器PHICD4020 14级串行二进制计数/分频器FSCCD4021 08位串入/并入-串出移位寄存器PHI/NSCCD4022 八进制计数/分配器NSC/MOTCD4023 三3输入端与非门NSC/MOT/TICD4024 7级二进制串行计数/分频器NSC/MOT/TICD4025 三3输入端或非门NSC/MOT/TICD4026 十进制计数/7段译码器NSC/MOT/TICD4027 双J-K触发器NSC/MOT/TICD4028 BCD码十进制译码器NSC/MOT/TICD4029 可预置可逆计数器NSC/MOT/TICD4030 四异或门NSC/MOT/TI/GOLCD4031 64位串入/串出移位存储器NSC/MOT/TICD4032 三串行加法器NSC/TICD4033 十进制计数/7段译码器NSC/TICD4034 8位通用总线寄存器NSC/MOT/TICD4035 4位并入/串入-并出/串出移位寄存NSC/MOT/TI CD4038 三串行加法器NSC/TICD4040 12级二进制串行计数/分频器NSC/MOT/TICD4041 四同相/反相缓冲器NSC/MOT/TICD4042 四锁存D型触发器NSC/MOT/TICD4043 4三态R-S锁存触发器("1"触发) NSC/MOT/TI CD4044 四三态R-S锁存触发器("0"触发) NSC/MOT/TI CD4046 锁相环NSC/MOT/TI/PHICD4047 无稳态/单稳态多谐振荡器NSC/MOT/TICD4048 4输入端可扩展多功能门NSC/HIT/TICD4049 六反相缓冲/变换器NSC/HIT/TICD4050 六同相缓冲/变换器NSC/MOT/TICD4051 八选一模拟开关NSC/MOT/TICD4052 双4选1模拟开关NSC/MOT/TICD4053 三组二路模拟开关NSC/MOT/TICD4054 液晶显示驱动器NSC/HIT/TICD4055 BCD-7段译码/液晶驱动器NSC/HIT/TICD4056 液晶显示驱动器NSC/HIT/TICD4059 “N”分频计数器NSC/TICD4060 14级二进制串行计数/分频器NSC/TI/MOT CD4063 四位数字比较器NSC/HIT/TICD4066 四传输门NSC/TI/MOTCD4067 16选1模拟开关NSC/TICD4068 八输入端与非门/与门NSC/HIT/TICD4069 六反相器NSC/HIT/TICD4070 四异或门NSC/HIT/TICD4071 四2输入端或门NSC/TICD4072 双4输入端或门NSC/TICD4073 三3输入端与门NSC/TICD4075 三3输入端或门NSC/TICD4076 四D寄存器CD4077 四2输入端异或非门HITCD4078 8输入端或非门/或门CD4081 四2输入端与门NSC/HIT/TICD4082 双4输入端与门NSC/HIT/TICD4085 双2路2输入端与或非门CD4086 四2输入端可扩展与或非门CD4089 二进制比例乘法器CD4093 四2输入端施密特触发器NSC/MOT/STCD4094 8位移位存储总线寄存器NSC/TI/PHICD4095 3输入端J-K触发器CD4096 3输入端J-K触发器CD4097 双路八选一模拟开关CD4098 双单稳态触发器NSC/MOT/TICD4099 8位可寻址锁存器NSC/MOT/STCD40100 32位左/右移位寄存器CD40101 9位奇偶较验器CD40102 8位可预置同步BCD减法计数器CD40103 8位可预置同步二进制减法计数器CD40104 4位双向移位寄存器CD40105 先入先出FI-FD寄存器CD40106 六施密特触发器NSC\\TICD40107 双2输入端与非缓冲/驱动器HAR\\TICD40108 4字×4位多通道寄存器CD40109 四低-高电平位移器CD4529 双四路/单八路模拟开关CD4530 双5输入端优势逻辑门CD4531 12位奇偶校验器CD4532 8位优先编码器CD4536 可编程定时器CD4538 精密双单稳CD4539 双四路数据选择器CD4541 可编程序振荡/***CD4543 BCD七段锁存译码,驱动器CD4544 BCD七段锁存译码,驱动器CD4547 BCD七段译码/大电流驱动器CD4549 函数近似寄存器CD4551 四2通道模拟开关CD4553 三位BCD计数器CD4555 双二进制四选一译码器/分离器CD4556 双二进制四选一译码器/分离器CD4558 BCD八段译码器CD4560 "N"BCD加法器CD4561 "9"求补器CD4573 四可编程运算放大器CD4574 四可编程电压比较器CD4575 双可编程运放/比较器CD4583 双施密特触发器CD4584 六施密特触发器CD4585 4位数值比较器CD4599 8位可寻址锁存器CD40110 十进制加/减,计数,锁存,译码驱动STCD40147 10-4线编码器NSC\\MOTCD40160 可预置BCD加计数器NSC\\MOTCD40161 可预置4位二进制加计数器NSC\\MOTCD40162 BCD加法计数器NSC\\MOTCD40163 4位二进制同步计数器NSC\\MOTCD40174 六锁存D型触发器NSC\\TI\\MOTCD40175 四D型触发器NSC\\TI\\MOTCD40181 4位算术逻辑单元/函数发生器CD40182 超前位发生器CD40192 可预置BCD加/减计数器(双时钟) NSC\\TICD40193 可预置4位二进制加/减计数器NSC\\TICD40194 4位并入/串入-并出/串出移位寄存NSC\\MOTCD40195 4位并入/串入-并出/串出移位寄存NSC\\MOTCD40208 4×4多端口寄存器型号器件名称厂牌备注CD4501 4输入端双与门及2输入端或非门CD4502 可选通三态输出六反相/缓冲器CD4503 六同相三态缓冲器CD4504 六电压转换器CD4506 双二组2输入可扩展或非门CD4508 双4位锁存D型触发器CD4510 可预置BCD码加/减计数器CD4511 BCD锁存,7段译码,驱动器CD4512 八路数据选择器CD4513 BCD锁存,7段译码,驱动器(消隐)CD4514 4位锁存,4线-16线译码器CD4515 4位锁存,4线-16线译码器CD4516 可预置4位二进制加/减计数器CD4517 双64位静态移位寄存器CD4518 双BCD同步加计数器CD4519 四位与或选择器CD4520 双4位二进制同步加计数器CD4521 24级分频器CD4522 可预置BCD同步1/N计数器CD4526 可预置4位二进制同步1/N计数器CD4527 BCD比例乘法器CD4528 双单稳态触发器注：同型号的74系列、74HC系列、74LS系列芯片，逻辑功能上是一样的。

商品九位编码明细1

商品编码商品型号AA00R000L KF-120QW/L室内机总成AA00S000L KF-120QW/L室外机总成AA00T000L KF-120QW/L套机AA011000K KF-125EW/D(H)室内机总成AA0120006KFR-32GW/01JNC13T套机(普投)AA012000K KF-125EW/D(H)室外机总成AA012000W KFR-26GW/01LAC13套机AA012000X KFRd-35GW/02NRA-S2(家电下乡)套机AA0120U0J KFR-35G/LAF13室内机非演示壳体总成AA0120U0L KFRd-35G/RA(F)-S1(SQD)内机壳体总成(非演示) AA0120U10NRA-S2分体装饰面板AA0121000KFRd-26GW/02SC-S2套机(家电下乡SC)AA0121006KFR-35GW/01JNC13T套机(普投)AA012100L KFR-23GW/01CAF12套机AA012100W KFR-35GW/01LAC13套机AA012100X KFRd-35G/NRA-S2(家电下乡)室内机总成AA0122000KFRd-26G/SC-S2室内机总成(家电下乡SC)AA012200W KFR-33GW/01LAC13套机AA012200X KFRd-26GW/02NRA-S2(家电下乡)套机AA0122U0J KFR-35G/JNF12T室内机演示壳体总成AA0123000KFRd-33GW/02SC-S2套机(家电下乡SC)AA012300L KFR-33GW/01CAF12套机AA0123010KFR-35G/LAC13室内机总成AA0124000KFRd-33G/SC-S2室内机总成(家电下乡SC)AA0124U0J KFR-35G/JEC13室内机非演示壳体总成AA0125000KFRd-35GW/02SC-S2套机(家电下乡SC)AA0126000KFRd-35G/SC-S2室内机总成(家电下乡SC)AA012600X KFRd-33GW/02NRA-S2(家电下乡)套机AA0126U0J KFR-35G/JNF12T室内机演示壳体总成-1AA0127000KFRd-23GW/02JC(F)-S1(YH)套机AA0127U0J KFR-35G/JEC13室内机非演示壳体总成-1AA0128000KFRd-23G/JC(F)-S1(YH)室内机总成AA012800X KFRd-35G/ZRA-S2(家电下乡)室内机总成AA0128U0J JEC13分体装饰面板AA0129000KFRd-26GW/02JC(F)-S1(YH)套机AA012900X KFRd-35G/ZRA-S2(白色)(家电下乡)室内机总成AA012A000KFRd-26G/JC(F)-S1(YH)室内机总成AA012B000KFRd-33GW/02JC(F)-S1(YH)套机AA012B00X KFR-26GW/01LAC13套机AA012C000KFRd-33G/JC(F)-S1(YH)室内机总成AA012C00X KFR-33GW/01LAC13套机AA012D000KFRd-35GW/02JC(F)-S1(YH)套机AA012D00X KFR-35GW/01LAC13套机AA012E000KFRd-35G/JC(F)-S1(YH)室内机总成AA012F00X KFR-26G/LAC13室内机总成AA012FU00KFRd-35G/JC(F)-S1(YH)室内机非演示壳体总成AA012G000KFR-23GW/01JCF12套机AA012G00X KFR-33G/LAC13室内机总成AA012G011KFR-26GW/01JCF12(YH)套机AA012H000KFR-23G/JCF12室内机总成AA012H00X KFR-35G/LAC13室内机总成AA012J000KFR-26GW/01JCF12套机AA012J011KFR-33GW/01JCF12(YH)套机AA012K000KFR-26G/JCF12室内机总成AA012L000KFR-33GW/01JCF12套机AA012L011KFR-35GW/01JCF12(YH)套机AA012M000KFR-33G/JCF12室内机总成AA012N000KFR-35GW/01JCF12套机AA012N011KFR-23GW/01JCF12(YH)套机AA012P000KFR-35G/JCF12室内机总成AA012Q000KFR-35G/JCF12(YH)室内机非演示壳体总成AA012Q011KFR-23GW/01JNF12T套机AA012S00X KFR-23GW/01JEC13套机AA012S011KFR-26GW/01JNF12T套机AA012U00X KFR-26GW/01JEC13套机AA012U011KFR-33GW/01JNF12T套机AA012W00X KFR-33GW/01JEC13套机AA012W011KFR-35GW/01JNF12T套机AA012X00X KFR-33G/JEC13室内机总成AA012Y00X KFR-35GW/01JEC13套机AA012Y011KFR-26G/01JNC13T套机(普投)AA012Z00X KFR-35G/JEC13室内机总成AA013000K KF-125EW/D(H)套机AA02B0000KF-21GW(G)AA02C0000KF-21GW(W)(铁壳调整安装支架)AA02M0000KF-22GW(W)(迷你星调整安装支架)AA02N0000KF-22GW/(F)(G)AA0300000KF-22GW/E(F)室内机总成AA0310000KF-22GW/E(F)室外机总成AA0320000KF-22GW/E(F)套机AA0370000KF-23GW/(F)(G)AA0380000KF-23GW/(F)(W)AA03K0000KF-23GW/B(G)AA03L0000KF-23GW/B(W)AA04F2000KF-23GW/E2-S5室内机总成AA04F6000KF-23GW/E(G)室内机总成AA04G2000KF-23GW/E2-S5室外机总成AA04G5000KF-23W/03-S5室外机总成AA04H2000KF-23GW/E2-S5套机AA04H3000KF-23GW/E3-S5(ZMD)套机AA04H6000KF-23GW/03GCE-S5套机AA04HB000KF-23GW/03E-S3套机AA04HC000KF-23GW/03E-S3套机(家电下乡E)AA04M0000KF-23GW/HB(F)(G)AA04N0000KF-23GW/HB(F)(W)AA04T0000KF-23GW/Z(G)AA04T1000KF-23GW/Z(氧吧换新风)(G)AA04T2000KF-23GW/Z2(GC)室内机总成AA04T3000KF-23GW/Z8(ZMD)室内机总成AA04U0000KF-23GW/Z(W)AA04U1000KF-23GW/Z(氧吧换新风)(W)AA04U2000KF-23GW/Z2(GC)室外机总成AA04U3000KF-23GW/Z8(ZMD)室外机总成AA04V2000KF-23GW/Z2(GC)套机AA04V3000KF-23GW/Z8(ZMD)套机AA05H0000KF-25GW/A(F)(G)AA05J0000KF-25GW/A(F)(W)AA0640000KF-25GW/H(F)室内机总成AA0650000KF-25GW/H(F)(W)AA0670000KF-25GW/HB(F)(G)AA0680000KF-25GW/HB(F)室外机总成(LG164HAA压机) AA0732000KF-25GW/Z2(GC)室内机总成AA0733000KF-25GW/Z8(ZMD)室内机总成AA0742000KF-25GW/Z2(GC)室外机总成AA0743000KF-25GW/Z8(ZMD)室外机总成AA0752000KF-25GW/Z2(GC)套机AA0753000KF-25GW/Z8(ZMD)套机AA08A0000KF-26GW/F(G)AA08B0000KF-26GW/F(W)AA08W0000KF-26GW/N(F)(G)AA08X0000KF-26GW/N(F)(W)AA0931000KF-27GW/E2-S5套机AA0932000KF-27GW/E3-S5(ZMD)套机AA0941000KF-27GW/E2-S5室内机总成AA0942000KF-27GW/E3-S5(ZMD)室内机总成AA0951000KF-27GW/E2-S5室外机总成AA0952000KF-27GW/E3-S5(ZMD)室外机总成AA0A60000KF-33GW/(F)(G)AA0A70000KF-33GW/(F)(W)AA0B22000KF-33GW/E2-S5室内机总成AA0B24000KF-33G/E-S5室内机总成AA0B32000KF-33GW/E2-S5室外机总成AA0B34000KF-33W/03-S5室外机总成AA0B42000KF-33GW/E2-S5套机AA0B44000KF-33GW/03GCE-S5套机AA0CL0000KF-35GW/A(F)(W)AA0CX0000KF-35GW/D(G)AA0D01000KF-35GW/E2-S5套机AA0D02000KF-35GW/E3-S5(ZMD)套机AA0D05000KF-35GW/03GCE-S5套机AA0D08000KF-35GW/03CE-S5套机AA0D0A000KF-35GW/03E-S3套机AA0D0B000KF-35GW/03E-S3套机(家电下乡E)AA0D71000KF-35GW/E2-S5室内机总成AA0D72000KF-35GW/E3-S5(ZMD)室内机总成AA0D75000KF-35G/GCE-S5AA0D78000KF-35G/CE-S5室内机总成AA0D81000KF-35GW/E2-S5室外机总成AA0D82000KF-35GW/E3-S5(ZMD)室外机总成AA0D84000KF-35W/03-S5室外机总成AA0D86000KF-35W/03-S3室外机总成(家电下乡E)AA0EJ2000KF-35GW/Z2(GC)室内机总成AA0EJ3000KF-35GW/Z8(ZMD)室内机总成AA0EK2000KF-35GW/Z2(GC)室外机总成AA0EK3000KF-35GW/Z8(ZMD)室外机总成AA0EL2000KF-35GW/Z2(GC)套机AA0EL3000KF-35GW/Z8(ZMD)套机AA0FW0000KF-36GW/JFAA0FZ0000KF-36GW/M(F)室内机总成AA0GD0000KF-36GW/MK(YF)室内机总成AA0GE0000KF-36GW/MK(YF)(W)AA0GG0000KF-36GW/N(F)室内机总成AA0GH0000KF-36GW/N(F)室外机总成AA0HW2000KF-48GW/Z7室内机总成AA0HX2000KF-48GW/Z7室外机总成AA0HY2000KF-48GW/Z7套机AA0L50000KF-68GW/Z套机AA0LB0000KF-70GW/A(F)室内机总成AA0LC0000KF-70GW/A(F)室外机总成(EMC)AA0NF0000KFR-125EW/D(H)室内机(三洋)AA0NF000L KFR-125EW/L(H)室内机总成AA0NG0000KFR-125EW/D(H)室外机(三洋)AA0NG000L KFR-125EW/L(H)室外机总成AA0NH0000KFR-125EW/D(H)套机AA0NH000L KFR-125EW/L(H)套机AA0PX0000KFR-20GW/L(G)AA0PY0000KFR-20GW/L(W)AA0QG0000KFR-22GW/A(G)AA0QH0000KFR-22GW/A(W)(迷你星调整安装支架)AA0RD0000KFR-23GW/B(G)返修机BOMAA0RE0000KFR-23GW/B(W)返修机BOMAA0RN0000KFR-23GW/C室外机总成AA0RP0000KFR-23GW/C室内机总成AA0RV0000KFR-23GW/D室外机总成(瑞智压机)AA0RZ2000KFR-23GW/D1套机AA0S30000KFR-23GW/E(G)AA0S40000KFR-23GW/E(W)AA0SA0000KFR-23GW/HB(F)室内机总成AA0SB0000KFR-23GW/HB(F)室外机总成AA0SK0000KFR-23GW/Z(G)AA0SK2000KFR-23GW/Z6室内机总成(ZMD)AA0SL0000KFR-23GW/Z(W)AA0SL2000KFR-23GW/Z6室外机总成(ZMD)AA0SR2000KFR-23GW/Z6套机(ZMD)AA0SX0000KFR-24GW/S(F)(新小外机)(G)AA0SY0000KFR-24GW/S(F)(新小外机)(W)AA0TA0000KFR-250EW/(H)室内机AA0TB0B02KFR-250EW/(H)新外观室外机(肯德基工程)AA0TC000Q KFR-250EW/(H)套机新外观AA0U10000KFR-25GW/C(F)(G)AA0U20000KFR-25GW/C(F)(W)(铁壳调整安装支架)AA0US0000KFR-25GW/HK(F)室外机总成AA0UW0000KFR-25GW/HK(XF)室内机总成(氧吧聪明风)AA0UX0000KFR-25GW/HK(XF)(氧吧聪明风)(W)(松下2P18S225ANC) AA0VR0000KFR-26GW(G)AA0VT0000KFR-26GW(W)AA0W90000KFR-26GW/BPF(G)AA0WA0000KFR-26GW/(BPF)室外机总成AA0WC0000KFR-26GW/C(BPF)(G)AA0WD0000KFR-26GW/C(BPF)(W)(全塑调整安装支架)AA0WJ0000KFR-26GW/C(F)室内机总成AA0WK0000KFR-26GW/C(F)室外机总成AA0WT0000KFR-26GW/E(BPF)室内机总成AA0WU0000KFR-26GW/E(BPF)室外机总成AA0X00000KFR-26GW/MK(YF)室外机总成AA0X30000KFR-26GW/N(F)(W)AA0XH0000KFR-27GW(W)AA0Y30000KFR-28GW/(DBPJF)(G)AA0YT0000KFR-28GW/BPF(G)AA0YY0000KFR-28GW/C(BPF)(G)AA0Z00000KFR-28GW/C(BPF)(W)(全塑调整安装支架) AA0Z90000KFR-28GW/DBPF(G)AA0ZA0000KFR-28GW/(DBPF)室外机总成AA0ZE0001KFR-28GW/HB(BPF)室内机总成(铁壳外机) AA0ZF0000KFR-28GW/HB(BPF)(W)AA0ZF0001KFR-28GW/HB(BPF)室外机总成(铁壳外机) AA0ZF0V01KFR-28GW/HB(BPF)室外机壳体总成AA0ZG0000KFR-28GW/HB(BPF)套机AA0ZG0001KFR-28GW/HB(BPF)套机(铁壳外机)AA0ZP0000KFR-28GW/M(BPF)(G)AA0ZQ0000KFR-28GW/M(BPF)(W)(全塑调整安装支架) AA10F0000KFR-32GW(G)AA10G0000KFR-32GW(W)AA10Z0000KFR-32GW/A(F)(G)AA1110000KFR-32GW/A(F)(W)AA1160000KFR-32GW/B(F)(G)AA1170000KFR-32GW/B(F)(W)AA11H0000KFR-32GW/C(BPF)(G)AA11J0000KFR-32GW/C(BPF)(W)AA1242000KFR-50GW/03RDC13套机AA1245000KFR-50GW/03RCC13套机AA1246000KFR-50G/RCC13室内机总成AA1247000KFR-50G/RDC13室内机总成AA1270000KFR-32GW/L(G)AA1271000KFR-32GW/L1室内机总成AA1280000KFR-32GW/L(W)(瑞智48R313)AA1281000KFR-32GW/L1室外机总成(LG压机)AA12K0000KFR-32GW/Z内机返修BOMAA12K1000KFR-32GW/Z(氧吧换新风)(G)AA12L0000KFR-32GW/Z(瑞智压机)(W)AA12P0000KFR-33GW(W)(QX-23BO30)AA12Q0000KFR-33GW/(F)(G)(三菱RH231压机)AA12R0000KFR-33GW/(F)(W)AA12W0000KFR-33GW/A(G)AA12X0000KFR-33GW/A(W)AA1320000KFR-33GW/B室内机总成AA1330000KFR-33GW/B室外机总成AA13C0000KFR-33GW/C室外机总成AA13D0000KFR-33GW/C室内机总成AA13K0000KFR-33GW/D(G)AA13K3000KFR-33GW/D2室内机总成AA13L0000KFR-33GW/D(W)AA13L3000KFR-33GW/D2室外机总成AA1470000KFR-33GW/K(F)(W)AA1480000KFR-33GW/K(F)(小外机)(G)AA14W0000KFR-33GW(G)AA1560000KFR-34GW/S(F)(G)AA1570000KFR-34GW/S(F)室外机总成AA1580000KFR-34GW/S(F)(新小外机)(G)AA1590000KFR-34GW/S(F)(新小外机)室外机总成(LG) AA15R2000KFR-35GW/(BP)(遥控)(G)AA15S2000KFR-35GW/(BP)(遥控)(W)AA1690000KFR-35GW/A(BPF)室内机总成AA16P0000KFR-35GW/BPF(G)AA16Q0000KFR-35GW/(BPF)室外机总成AA1750000KFR-35GW/E(BPF)(G)AA1750003KFR-35GW/E(BPF)(G)(三菱SHV130FFDC,EMC) AA1760000KFR-35GW/E(BPF)室外机总成AA1780000KFR-35GW/E(F)(G)AA1790000KFR-35GW/E(F)(W)AA17B0000KFR-35GW/E(F)(小外机)(G)AA17C0000KFR-35GW/E(F)(小外机)(W)AA17E0000KFR-35GW/E(G)AA17F0000KFR-35GW/E(W)AA17K0000KFR-35GW/G(F)(G)AA17Q2000KFR-35GW/H2套机AA1801000KFR-35GW/H室内机总成(单导板聪明风)AA1802000KFR-35GW/H2室内机总成AA1804000KFR-35GW/H3室内机总成AA1811000KFR-35GW/H室外机总成(星光银)AA1812000KFR-35GW/H2室外机总成AA1820000KFR-35GW/HB(BPF)室内机总成AA1820001KFR-35GW/HB(BPF)室内机总成(铁壳外机)AA1830001KFR-35GW/HB(BPF)室外机总成(铁壳外机)AA1840000KFR-35GW/HB(BPF)套机AA1840001KFR-35GW/HB(BPF)套机(铁壳外机)AA1850000KFR-35GW/HB(F)(G)AA1860000KFR-35GW/HB(F)室外机总成(瑞智48R343NM压机) AA18A0000KFR-35GW/HK(BPXF)(变频氧吧聪明风)(G)AA18B0000KFR-35GW/HK(BPXF)(变频氧吧聪明风)(W)AA18E0000KFR-35GW/HK(DBPXF)(G)AA18F0000KFR-35GW/HK(DBPXF)室外机总成AA18G0000KFR-35GW/HK(DBPXF)(数码氧吧聪明风)(G)AA18H0000KFR-35GW/HK(DBPXF)室外机总成(日本东芝压) AA18R0000KFR-35GW/HK(XF)(氧吧聪明风)(G)AA18S0000KFR-35GW/HK(XF)(氧吧聪明风)(W)AA18V0000KFR-35GW/K(BPF)(G)(换电脑板)AA18W0000KFR-35GW/K(BPF)(W)(换电脑板)AA19U0000KFR-35NW/(F)(G)AA1AA0000KFR-36GW/BP(G)AA1AB0000KFR-36GW/F(G)AA1AD0000KFR-36GW(G)AA1AE0000KFR-36GW(W)AA1AF0000KFR-36GW/(BPJF)室内机总成AA1AG0000KFR-36GW/(BPJF)(W)返修BOMAA1BZ0000KFR-36GW/D(BPJF)(W)AA1C50000KFR-36GW/(DBPF)室内机总成AA1CG0000KFR-36GW/F(W)AA1CM0000KFR-36GW/JF(G)AA1CN0000KFR-36GW/JF(W)AA1CP0000KFR-36GW/M(BPF)(G)AA1CQ0000KFR-36GW/M(BPF)(W)(全塑调整安装支架)AA1CY0000KFR-36GW/M(F)室内机总成AA1D00000KFR-36GW/M(F)(W)(铁壳调整安装支架)AA1DT0000KFR-36GW/MK(YF)(G)AA1DU0000KFR-36GW/MK(YF)(W)AA1DZ0000KFR-36GW/N(F)室内机总成AA1E00000KFR-36GW/N(F)(W)AA1E80000KFR-36GW/BP室外机总成AA1E90000KFR-36GW/DBPF(W)AA1ED0000KFR-40GW/A(DBPJF)(G)AA1EE0000KFR-40GW/A(DBPJF)(W)AA1F80000KFR-40GW/F(W)AA1G00000KFR-48GW/@(F)(G)AA1G90000KFR-48GW/Z室内机总成AA1GA0000KFR-48GW/Z室外机总成AA1H10000KFR-50GW/C室内机总成AA1JD0000KFR-50GW/C(W)AA1JK0000KFR-58GW/(F)(G)AA1JL0000KFR-58GW/(F)室外机总成AA1JN0000KFR-600EW/H内机AA1JN0V01KFR-600EW/H(L)不送风演示壳体AA1JP0000KFR-600EW/H外机AA1JQ0M01KFR-600EW/L(H)(定制)AA1JQ0M02KFR-500EW(定制)AA1JQ0M03KFR-600EW(定制)AA1JQ0M04KFR-500NW/H(定制)AA1JU0000KFR-60GW/(F)室内机总成AA1JV0000KFR-60GW/(F)室外机总成(支架调整)AA1LQ0000KFR-71NW/D室内机AA1LR0000KFR-71NW/D室外机AA1LS0000KFR-71NW/D套机AA1LS000Q 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KF-35NW/D室外机总成(新外观）AA5D60000KFRD-35GW/Z套机AA5D62000KFRD-35GW/Z3套机AA5D63000KFRD-35GW/Z5套机AA5D64000KFRD-35GW/Z7套机AA5D66000KFRD-35GW/Z6套机(TX)AA5D68000KFRD-35GW/Z6套机AA5D6A000KFRD-35GW/Z8(ZMD)套机AA5D6B000KFRD-35GW/Z2(GC)套机AA5D70000KFRD-35GW/Z(G)AA5D70V01KFRD-35GW/Z室内机壳体总成(演示)AA5D72000KFRD-35GW/Z3室内机总成AA5D73000KFRD-35GW/Z5室内机总成AA5D74000KFRD-35GW/Z7室内机总成AA5D76000KFRD-35GW/Z6室内机总成(TX)AA5D78000KFRD-35GW/Z6室内机总成AA5D7A000KFRD-35GW/Z8(ZMD)室内机总成AA5D7AV01KFRD-35GW/Z8(ZMD)内机非演示壳体总成AA5D7B000KFRD-35GW/Z2(GC)室内机总成AA5D7BV01KFRD-35GW/Z2(GC)内机非演示壳体总成AA5D80000KFRD-35GW/Z室外机(庆安YZG-39RCT1) AA5D81000KFRD-35GW/Z2室外机总成AA5D82000KFRD-35GW/Z3室外机总成AA5D83000KFRD-35GW/Z5室外机总成AA5D84000KFRD-35GW/Z7室外机总成AA5D86000KFRD-35GW/Z6室外机总成(TX)AA5D88000KFRD-35GW/Z6室外机总成AA5D8A000KFRD-35GW/Z8(ZMD)室外机总成AA5D8B000KFRD-35GW/Z2(GC)室外机总成AA5D92000KFRD-25GW/Z3套机AA5DJ1000KFR-25GW/H2套机AA5DK0000KFR-25GW/H(G)(单导板聪明风)AA5DK1000KFR-25GW/H2室内机总成AA5DK2000KFR-25GW/H3室内机总成AA5DL0000KFR-25GW/H室外机总成(日立SG633压机) AA5DL1000KFR-25GW/H2室外机总成AA5DL2000KFR-25GW/H3室外机总成AA5DM4000KF-25GW/H5套机AA5DM5000KF-25GW/H2(ZMD)套机AA5DN0000KF-25GW/H(G)(单导板聪明风)AA5DN2000KF-25GW/H2室内机总成AA5DN4000KF-25GW/H5室内机总成AA5DN5000KF-25GW/H2(ZMD)室内机总成AA5DP0000KF-25GW/H(W)(单导板聪明风)AA5DP2000KF-25GW/H2室外机总成AA5DP4000KF-25GW/H5室外机总成AA5DP5000KF-25GW/H2(ZMD)室外机总成AA5DQ1000KFR-23GW/H2套机AA5DQ3000KFR-23GW/H3套机AA5DR0000KFR-23GW/H室内机总成(单导板聪明风) AA5DR1000KFR-23GW/H2室内机总成AA5DR3000KFR-23GW/H3室内机总成AA5DS0000KFR-23GW/H(W)(日立SG533)AA5DS1000KFR-23GW/H2室外机总成AA5DS3000KFR-23GW/H3室外机总成AA5DT1000KF-23GW/H2套机AA5DT4000KF-23GW/H5套机AA5DT5000KF-23GW/H2(ZMD)套机AA5DU0000KF-23GW/H(G)(单导板聪明风)AA5DU1000KF-23GW/H2室内机总成AA5DU4000KF-23GW/H5室内机总成AA5DU5000KF-23GW/H2(ZMD)室内机总成AA5DV1000KF-23GW/H2室外机总成AA5DV4000KF-23GW/H5室外机总成AA5DV5000KF-23GW/H2(ZMD)室外机总成AA5DW0000KFR-71QW/D(S)套机AA5DW1000KFR-71QW/D(S)线控套机AA5DX0000KFR-71QW/D(S)室内机总成AA5DX1000KFR-71QW/D(S)(线控)室内机总成AA5DY0000KFR-71QW/D(S)室外机总成AA5DY1000KFR-71QW/D(S)(线控)室外机总成AA5E95000KF-23GW/Z7套机AA5EA0000KF-23GW/Z1(G)AA5EA1000KF-23GW/Z2室内机总成AA5EA3000KF-23GW/Z5室内机总成AA5EA5000KF-23GW/Z7室内机总成AA5EB0000KF-23GW/Z1室外机总成(OEM)AA5EB1000KF-23GW/Z2室外机总成AA5EB3000KF-23GW/Z5室外机总成AA5EB5000KF-23GW/Z7室外机总成AA5EC0000KFR-23GW/Z1套机AA5EC1000KFR-23GW/Z2套机AA5EC3000KFR-23GW/Z5套机AA5ED0000KFR-23GW/Z1室内机总成(OEM)AA5ED1000KFR-23GW/Z2室内机总成AA5ED3000KFR-23GW/Z5室内机总成AA5EE0000KFR-23GW/Z1室外机总成(日立SG533QA1压机) AA5EE1000KFR-23GW/Z2室外机总成AA5EE3000KFR-23GW/Z5室外机总成AA5EF1000KF-25GW/Z2套机AA5EF3000KF-25GW/Z5套机AA5EF4000KF-25GW/Z7套机AA5EG0000KF-25GW/Z1(G)AA5EG1000KF-25GW/Z2室内机总成AA5EG3000KF-25GW/Z5室内机总成AA5EG4000KF-25GW/Z7室内机总成AA5EH0000KF-25GW/Z1室外机总成(LGQK164JAB压机) AA5EH1000KF-25GW/Z2室外机总成AA5EH3000KF-25GW/Z5室外机总成AA5EH4000KF-25GW/Z7室外机总成AA5EJ1000KFR-25GW/Z2套机AA5EK0000KFR-25GW/Z1(G)AA5EK1000KFR-25GW/Z2室内机总成AA5EK1V01KFR-25GW/Z2室内机壳体总成(非演示)AA5EK3000KFR-25GW/Z5室内机总成AA5EL0000KFR-25GW/Z1室外机总成(松下2P18压机)AA5EL1000KFR-25GW/Z2室外机总成AA5EM1000KF-32GW/Z2套机AA5EM3000KF-32GW/Z5套机AA5EN0000KF-32GW/Z1室内机总成(OEM)AA5EN1000KF-32GW/Z2室内机总成AA5EP0000KF-32GW/Z1室外机总成(RH207VHKC) AA5EP1000KF-32GW/Z2室外机总成AA5EQ0000KFR-32GW/Z1套机AA5EQ1000KFR-32GW/Z2套机AA5EQ3000KFR-32GW/Z5套机AA5ER0000KFR-32GW/Z1室内机总成AA5ER1000KFR-32GW/Z2室内机总成AA5ER3000KFR-32GW/Z5室内机总成AA5ES0000KFR-32GW/Z1室外机总成(端智48R313N) AA5ES1000KFR-32GW/Z2室外机总成AA5ES3000KFR-32GW/Z5室外机总成AA5ET1000KF-35GW/Z2套机AA5ET3000KF-35GW/Z5套机AA5ET4000KF-35GW/Z7套机AA5EU1000KF-35GW/Z2室内机总成AA5EU3000KF-35GW/Z5室内机总成AA5EU4000KF-35GW/Z7室内机总成AA5EV1000KF-35GW/Z2室外机总成AA5EV3000KF-35GW/Z5室外机总成AA5EV4000KF-35GW/Z7室外机总成AA5EW3000KFR-35GW/Z5套机AA5EX1000KFR-35GW/Z2室内机总成AA5EX3000KFR-35GW/Z5室内机总成AA5EY1000KFR-35GW/Z2室外机总成AA5EY3000KFR-35GW/Z5室外机总成AA5F51000KFR-33GW/H2套机AA5F54000KFR-33GW/H5套机AA5F60000KFR-33GW/H室内机总成(星光银)AA5F60V01KFR-33GW/H室内机壳体总成(演示)AA5F61000KFR-33GW/H2室内机总成AA5F62000KFR-33GW/H3室内机总成AA5F70000KFR-33GW/H室外机总成(星光银)AA5F71000KFR-33GW/H2室外机总成AA5F72000KFR-33GW/H3室外机总成AA5FB2000KF-35GW/H2套机AA5FB4000KF-35GW/H5套机AA5FB5000KF-35GW/H2(ZMD)套机AA5FC0000KF-35GW/H(G)(单导板聪明风)AA5FC2000KF-35GW/H2室内机总成AA5FC4000KF-35GW/H5室内机总成AA5FD0000KF-35GW/H(W)(单导板聪明风)AA5FD2000KF-35GW/H2室外机总成AA5FD4000KF-35GW/H5室外机总成AA5FD5000KF-35GW/H2(ZMD)室外机总成AA5FJ1000KFR-50GW/Z套机(GC)AA5FK0V01KFR-50GW/Z内机非演示壳体总成AA5FK1000KFR-50GW/Z室内机总成(GC)AA5FL1000KFR-50GW/Z室外机总成(GC)AA5GT1000KFR-26GW/(BP)2套机AA5GT3000KFR-26GW/(BP)5套机AA5GU0V01KFR-26GW/(BP)1室内机壳体总成(演示) AA5GU1000KFR-26GW/(BP)2室内机总成AA5GU3000KFR-26GW/(BP)5室内机总成AA5GV0000KFR-26GW/(BP)1室外机总成AA5GV1000KFR-26GW/(BP)2室外机总成AA5GV3000KFR-26GW/(BP)5室外机总成AA5GW0000KFR-35GW/(BP)1套机AA5GW3000KFR-35GW/(BP)5套机AA5GX0000KFR-35GW/(BP)1室内机总成AA5GX3000KFR-35GW/(BP)5室内机总成AA5GY0000KFR-35GW/(BP)1室外机总成AA5GY3000KFR-35GW/(BP)5室外机总成AA5H00M01HC48A1VAC(套机)AA5H10M01HC60A1VAC(套机)AA5JC0000KF-125EW/L(H)套机AA5JD0000KF-125EW/L(H)室内机总成AA5JE0000KF-125EW/L(H)室外机总成AA5JN0000KFR-120QW/L室内机总成AA5JN0V01KFR-120QW/L(新外观)室内机送风演示壳体AA5JP0000KFR-120QW/L室外机总成AA5JP0V01KFR-120QW/L(新外观)室外演示不送风壳体AA5JP0V02KFR-120QW/L室外机演示不送风壳体AA5JT1000KFRD-23GW/H3套机AA5JT2000KFRD-23GW/H2套机AA5JT3000KFRD-23GW/H5套机AA5JT4000KFRD-23GW/H2(ZMD)套机AA5JU1000KFRD-23GW/H3室内机总成AA5JU2000KFRD-23GW/H2室内机总成AA5JU3000KFRD-23GW/H5室内机总成AA5JU3V01KFRD-23GW/H5内机非演示壳体总成AA5JU4000KFRD-23GW/H2(ZMD)室内机总成AA5JU4V01KFRD-23GW/H2(ZMD)内机非演示壳体总成AA5JV1000KFRD-23GW/H3室外机总成AA5JV2000KFRD-23GW/H2室外机总成AA5JV3000KFRD-23GW/H5室外机总成(日立SG533) AA5JV4000KFRD-23GW/H2(ZMD)室外机总成AA5JW1000KFRD-25GW/H3套机AA5JW4000KFRD-25GW/H2(ZMD)套机AA5JX1000KFRD-25GW/H3室内机总成AA5JX2000KFRD-25GW/H2室内机总成AA5JX4000KFRD-25GW/H2(ZMD)室内机总成AA5JY1000KFRD-25GW/H3室外机总成AA5JY2000KFRD-25GW/H2室外机总成AA5JY4000KFRD-25GW/H2(ZMD)室外机总成AA5JZ1000KFRD-33GW/H3套机AA5JZ2000KFRD-33GW/H2套机AA5JZ3000KFRD-33GW/H5套机AA5JZ4000KFRD-33GW/H2(ZMD)套机AA5K01000KFRD-33GW/H3室内机总成AA5K02000KFRD-33GW/H2室内机总成AA5K03000KFRD-33GW/H5室内机总成AA5K04000KFRD-33GW/H2(ZMD)室内机总成AA5K11000KFRD-33GW/H3室外机总成AA5K12000KFRD-33GW/H2室外机总成(RH220VHLC)。

K9XXG08UXB资料

K9XXG08UXBINFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDEDON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.1. For updates or additional information about Samsung products, contact your nearest Samsung office.2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.* Samsung Electronics reserves the right to change products or specification without notice.Document Title128M x 8 Bit NAND Flash Memory Revision HistoryThe attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the rightto change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near your office.Revision No0.01.0RemarkAdvance FinalHistory1. Initial issue1. 1.8V device is eliminatedDraft DateMay 26. 2006Sep. 27. 2006GENERAL DESCRIPTIONFEATURES• Voltage Supply- 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V • Organization- Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation- Page Size : (2K + 64)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min.)128M x 8 Bit NAND Flash Memory• Fast Write Cycle Time- Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.)• Command/Address/Data Multiplexed I/O Port • Hardware Data Protection- Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology-Endurance : 100K Program/Erase Cycles with 1bit/512Byte ECC)- Data Retention : 10 Years • Command Driven Operation• Intelligent Copy-Back with internal 1bit/528Byte EDC • Unique ID for Copyright Protection • Package :- K9F1G08U0B-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0B ′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0B is an optimum solu-tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.PRODUCT LISTPart Number Vcc Range OrganizationPKG Type K9F1G08U0B-P2.70 ~3.60Vx8TSOP1PIN CONFIGURATION (TSOP1)K9F1G08U0B-PCB0/PIB0PACKAGE DIMENSIONS48-PIN LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)48 - TSOP1 - 1220FUnit :mm/Inch0.787±0.00820.00±0.20#1#240.20+0.07-0.030.008+0.003-0.0010.500.0197#48#250.48812.40M A X12.000.4720.10 0.004M A X 0.250.010()0.039±0.0021.00±0.050.0020.05MIN0.0471.20MAX0.45~0.750.018~0.0300.724±0.00418.40±0.100~8°0.0100.25T Y P0.125+0.0750.0350.005+0.003-0.0010.500.020()48-pin TSOP1Standard Type 12mm x 20mm123456789101112131415161718192021222324484746454443424140393837363534333231302928272625N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.CN.C N.C N.C N.C I/O7I/O6I/O5I/O4N.C N.C N.C Vcc Vss N.C N.C N.C I/O3I/O2I/O1I/O0N.C N.C N.C N.CPIN DESCRIPTIONNOTE : Connect all V CC and V SS pins of each device to common power supply outputs. Do not leave V CC or V SS disconnected.Pin Name Pin FunctionI/O 0 ~ I/O 7DATA INPUTS/OUTPUTSThe I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to high-z when the chip is deselected or when the outputs are disabled.CLECOMMAND LATCH ENABLEThe CLE input controls the activating path for commands sent to the command register. When active high, commands are latched into the command register through the I/O ports on the rising edge of the WE signal.ALEADDRESS LATCH ENABLEThe ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising edge of WE with ALE high.CECHIP ENABLEThe CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and the device does not return to standby mode in program or erase operation.REREAD ENABLEThe RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one.WEWRITE ENABLEThe WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse.WPWRITE PROTECTThe WP pin provides inadvertent program/erase protection during power transitions. The internal high volt-age generator is reset when the WP pin is active low.R/BREADY/BUSY OUTPUTThe R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition when the chip is deselected or when outputs are disabled.Vcc POWERV CC is the power supply for device. Vss GROUNDN.CNO CONNECTIONLead is not internally connected.Product IntroductionThe K9F1G08U0B is a 1,056Mbit(1,107,296,256 bit) memory organized as 65,536 rows(pages) by 2,112x8 columns. Spare 64x8 col-umns are located from column address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays accommodat-ing data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure consists of 32 cells. Total 1,081,344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 1,024 separately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F1G08U0B.The K9F1G08U0B has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execution. The 132M byte physical space requires 28 addresses, thereby requiring four cycles for addressing : 2 cycles of column address, 2 cycles of row address, in that order. Page Read and Page Program need the same four address cycles following the required command input. In Block Erase oper-ation, however, only the two row address cycles are used. Device operations are selected by writing specific commands into the com-mand register. Table 1 defines the specific commands of the K9F1G08U0B.In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and data-input cycles are removed, system performance for solid-state disk application is significantly increased.Table 1. Command SetsFunction1st Cycle2nd Cycle Acceptable Command during Busy Read 00h30hRead for Copy Back00h35hRead ID90h-Reset FFh-OPage Program80h10hCopy-Back Program85h10hBlock Erase60h D0hRandom Data Input(1)85h-Random Data Output(1)05h E0hRead Status70h ORead EDC Status(2)7Bh ONOTE : 1. Random Data Input/Output can be executed in a page.2. Read EDC Status is only available on Copy Back operation.Caution : Any undefined command inputs are prohibited except for above command set of Table 1.DC AND OPERATING CHARACTERISTICS (Recommended operating conditions otherwise noted.)NOTE : 1. V IL can undershoot to -0.4V and V IH can overshoot to V CC +0.4V for durations of 20 ns or less. 2. Typical value is measured at Vcc=3.3V, T A =25°C. Not 100% tested.ParameterSymbol Test ConditionsK9F1G08U0B(3.3V)UnitMinTypMaxOperating CurrentPage Read with Serial Access I CC 1tRC=25nsCE=V IL, I OUT =0mA-1530mAProgram I CC 2-EraseI CC 3-Stand-by Current(TTL)I SB 1CE=V IH , WP=0V/V CC --1Stand-by Current(CMOS)I SB 2CE=V CC -0.2, WP=0V/V CC -1050µAInput Leakage Current I LI V IN =0 to Vcc(max)--±10Output Leakage Current I LO V OUT =0 to Vcc(max)--±10Input High VoltageV IH (1)-0.8xVcc -V CC +0.3V Input Low Voltage, All inputs V IL (1)--0.3-0.2xVccOutput High Voltage Level V OH K9F1G08U0A :I OH =-400µA 2.4--Output Low Voltage Level V OLK9F1G08U0A :I OL =2.1mA--0.4Output Low Current(R/B)I OL (R/B)K9F1G08U0A :V OL =0.4V810-mA RECOMMENDED OPERATING CONDITIONS(Voltage reference to GND, K9F1G08U0B-XCB0 :T A =0 to 70°C, K9F1G0808B-XIB0:T A =-40 to 85°C)ParameterSymbol K9F1G08U0B(3.3V)UnitMin Typ.Max Supply Voltage V CC 2.7 3.3 3.6V Supply VoltageV SSV ABSOLUTE MAXIMUM RATINGSNOTE :1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns. Maximum DC voltage on input/output pins is V CC +0.3V which, during transitions, may overshoot to V CC +2.0V for periods <20ns.2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.ParameterSymbol Rating Unit3.3V Device Voltage on any pin relative to VSSV CC-0.6 to + 4.6VV IN -0.6 to + 4.6V I/O-0.6 to Vcc + 0.3 (< 4.6V)Temperature Under BiasK9XXG08XXB-XCB0T BIAS -10 to +125°C K9XXG08XXB-XIB0-40 to +125Storage Tempera-tureK9XXG08XXB-XCB0T STG-65 to +150°CK9XXG08XXB-XIB0Short Circuit CurrentI OS5mACAPACITANCE (T A =25°C, V CC =3.3V, f=1.0MHz)NOTE : Capacitance is periodically sampled and not 100% tested.ItemSymbol Test ConditionMin Max Unit Input/Output Capacitance C I/O V IL =0V -10pF Input CapacitanceC INV IN =0V-10pFVALID BLOCKNOTE : 1. The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or pro-gram factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/512Byte ECC.ParameterSymbol Min Typ.Max Unit K9F1G08U0BN VB1,004-1,024BlocksMODE SELECTIONNOTE : 1. X can be V IL or V IH.2. WP should be biased to CMOS high or CMOS low for standby.CLE ALE CE WERE WP ModeH L L H X Read Mode Command Input L H L H X Address Input(4clock)H L L H H Write ModeCommand Input L H L H H Address Input(4clock)L L L HH Data Input L L L H X Data Output X X X X H X DuringRead(Busy)X X X X X H DuringProgram(Busy)X X X X X H DuringErase(Busy)X X (1)X X X L Write Protect XXHXX0V/V CC (2)Stand-by AC TEST CONDITION(K9F1G08U0B-XCB0 :TA=0 to 70°C, K9F1G08U0B-XIB0:TA=-40 to 85°C, K9F1G08U0B : Vcc=2.7V~3.6V unless otherwise noted)ParameterK9F1G08U0B Input Pulse Levels 0V to Vcc Input Rise and Fall Times 5ns Input and Output Timing Levels Vcc/2Output Load1 TTL GATE and CL=50pFProgram / Erase CharacteristicsParameter Symbol Min Typ Max Unit Program Time t PROG-200700µs Dummy Busy Time for Two-Plane Page Program t DBSY-0.51µs Number of Partial Program Cycles Nop--4cycles Block Erase Time t BERS- 1.52msNOTE : 1. Typical value is measured at Vcc=3.3V, T A=25°C. Not 100% tested.2. Typical program time is defined as the time within which more than 50% of the whole pages are programmed at3.3V Vcc and 25°C temperature.AC Timing Characteristics for Command / Address / Data InputParameter Symbol Min Max UnitCLE Setup Time t CLS(1)12-nsCLE Hold Time t CLH5-nsCE Setup Time t CS(1)20-nsCE Hold Time t CH5-nsWE Pulse Width t WP12-nsALE Setup Time t ALS(1)12-nsALE Hold Time t ALH5-nsData Setup Time t DS(1)12-nsData Hold Time t DH5-nsWrite Cycle Time t WC25-nsWE High Hold Time t WH10-ns Address to Data Loading Time t ADL(2)100-ns NOTES : 1. The transition of the corresponding control pins must occur only once while WE is held low2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycleAC Characteristics for OperationParameter Symbol Min Max Unit Data Transfer from Cell to Register t R-25µs ALE to RE Delay t AR10-ns CLE to RE Delay t CLR10-ns Ready to RE Low t RR20-ns RE Pulse Width t RP12-ns WE High to Busy t WB-100ns Read Cycle Time t RC25-ns RE Access Time t REA-20ns CE Access Time t CEA-25ns RE High to Output Hi-Z t RHZ-100ns CE High to Output Hi-Z t CHZ-30ns CE High to ALE or CLE Don’t Care t CSD10-ns RE High to Output Hold t RHOH15-ns RE Low to Output Hold t RLOH5-ns CE High to Output Hold t COH15-ns RE High Hold Time t REH10-ns Output Hi-Z to RE Low t IR0-ns RE High to WE Low t RHW100-ns WE High to RE Low t WHR60-ns Device Resetting Time(Read/Program/Erase)t RST-5/10/500(1)µs NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5µs.NAND Flash Technical NotesIdentifying Initial Invalid Block(s)Initial Invalid Block(s)Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.The information regarding the initial invalid block(s) is called the initial invalid block information. Devices with initial invalid block(s)have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s)does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select tran-sistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit /512Byte ECC.All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The ini-tial invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every initial invalid block has non-FFh data at the column address of 2048. Since the initial invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial invalid block(s) based on the original initial invalid block information and create the initial invalid block table via the following suggested flow chart(Figure 3). Any intentional erasure of the original initial invalid block information is prohibited.*Check "FFh" at the column address 2048 Figure 3. Flow chart to create initial invalid block tableStartSet Block Address = 0Check "FFh"Increment Block AddressLast Block ?EndNoYesYesCreate (or update)NoInitialof the 1st and 2nd page in the blockInvalid Block(s) TableNAND Flash Technical Notes (Continued)Program Flow ChartStartI/O 6 = 1 ?I/O 0 = 0 ?No*Write 80hWrite AddressWrite DataWrite 10hRead Status RegisterProgram Completedor R/B = 1 ?Program ErrorYesNoYes: If program operation results in an error, map out the block including the page in error and copy thetarget data to another block.*Error in write or read operationWithin its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be employed. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.Failure ModeDetection and Countermeasure sequenceWrite Erase Failure Status Read after Erase --> Block Replacement Program Failure Status Read after Program --> Block Replacement ReadSingle Bit FailureVerify ECC -> ECC CorrectionECC: Error Correcting Code --> Hamming Code etc. Example) 1bit correction & 2bit detectionNAND Flash Technical Notes (Continued)Copy-Back Operation with EDC & Sector Definition for EDCGenerally, copy-back program is very powerful to move data stored in a page without utilizing any external memory. But, if the source page has one bit error due to charge loss or charge gain, then without EDC, the copy-back program operation could also accumulate bit errors.K9F1G08U0B supports copy-back with EDC to prevent cumulative bit errors. To make EDC valid, the page program operation should be performed on either whole page(2112byte) or sector(528byte). Modifying the data of a sector by Random Data Input before Copy-Back Program must be performed for the whole sector and is allowed only once per each sector. Any partial modification smaller than a sector corrupts the on-chip EDC codes.A 2,112-byte page is composed of 4 sectors of 528-byte and each 528-byte sector is composed of 512-byte main area and 16-byte spare area."A" area 512 Byte(1’st sector)"H" area (4’th sector)Main Field (2,048 Byte)16 Byte"G" area (3’rd sector)16 Byte "F" area (2’nd sector)16 Byte "E" area (1’st sector)16 Byte "B" area 512 Byte(2’nd sector)"C" area 512 Byte(3’rd sector)"D" area 512 Byte(4’th sector)Spare Field (64 Byte)Table 2. Definition of the 528-Byte SectorSector Main Field (Column 0~2,047)Spare Field (Column 2,048~2,111)Area NameColumn AddressArea NameColumn Address 1’st 528-Byte Sector "A"0 ~ 511"E"2,048 ~ 2,0632’nd 528-Byte Sector "B"512 ~ 1,023"F"2,064 ~ 2,0793’rd 528-Byte Sector "C"1,024 ~ 1,535"G"2,080 ~ 2,0954’th 528-Byte Sector"D"1,536 ~ 2,047"H"2,096 ~ 2,111Within a block, the pages must be programmed consecutively from the LSB(least significant bit) page of the block to the MSB(most significant bit) pages of the block. Random page address programming is prohibited. In this case, the definition of LSB page is the LSB among the pages to be programmed. Therefore, LSB doesn't need to be page 0.From the LSB page to MSB page DATA IN: Data (1)Data (64)(1)(2)(3)(32)(64)Data register Page 0Page 1Page 2Page 31Page 63Ex.) Random page program (Prohibition)DATA IN: Data (1)Data (64)(2)(32)(3)(1)(64)Data registerPage 0Page 1Page 2Page 31Page 63Addressing for program operation::::元器件交易网FLASH MEMORY K9F1G08U0B元器件交易网FLASH MEMORY K9F1G08U0BRead ID OperationCECLEWEALERE90hRead ID CommandMaker Code Device Code00h ECht REAAddress 1cycleI/Oxt ARDevice Device Code (2nd Cycle)3rd Cycle 4th Cycle 5th Cycle K9F1G08U0BF1h00h95h40hDevice 4th cyc.Code3rd cyc.5th cyc.4th ID DataDescription I/O7 I/O6I/O5 I/O4 I/O3I/O2I/O1 I/O0Page Size(w/o redundant area ) 1KB2KB4KB8KB0 00 11 01 1Block Size(w/o redundant area ) 64KB128KB256KB512KB0 00 11 01 1Redundant Area Size ( byte/512byte) 8161Organization x8x161Serial Access Minimum 50ns/30ns25nsReservedReserved1111ID Definition Table90 ID : Access command = 90HDescription1st Byte 2nd Byte 3rd Byte 4th Byte 5th Byte Maker CodeDevice CodeInternal Chip Number, Cell Type, Number of Simultaneously Programmed Pages, Etc Page Size, Block Size,Redundant Area Size, Organization, Serial Access Minimum Plane Number, Plane Size3rd ID DataDescription I/O7 I/O6I/O5 I/O4I/O3 I/O2I/O1 I/O0Internal Chip Number 12480 00 11 01 1Cell Type 2 Level Cell4 Level Cell8 Level Cell16 Level Cell0 00 11 01 1Number ofSimultaneouslyProgrammed Pages 12480 00 11 01 1Interleave Program Between multiple chips Not SupportSupport1Cache Program Not SupportSupport15th ID DataDescription I/O7I/O6 I/O5 I/O4I/O3 I/O2 I/O1I/O0Plane Number 12480 00 11 01 1Plane Size(w/o redundant Area) 64Mb128Mb256Mb512Mb1Gb2Gb4Gb8Gb0 0 00 0 10 1 00 1 11 0 01 0 11 1 01 1 1Reserved 0 0 0Figure 7. Random Data Output In a PageAddress 00hData OutputR/B RE t R30hAddress 05hE0h4Cycles2Cycles Data OutputData Field Spare Field Data Field Spare FieldI/OxCol. Add.1,2 & Row Add.1,2PAGE PROGRAMThe device is programmed basically on a page basis, but it does allow multiple partial page programming of a word or consecutive bytes up to 2,112, in a single page program cycle. The number of consecutive partial page programming operation within the same page without an intervening erase operation must not exceed 4 times for a single page. The addressing should be done in sequential order in a block. A page program cycle consists of a serial data loading period in which up to 2,112bytes of data may be loaded into the data register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell. The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address inputs and then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.Modifying the data of a sector by Random Data Input before Copy-Back Program must be performed for the whole sector and is allowed only once per each sector. Any partial modification smaller than a sector corrupts the on-chip EDC codes.The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and tim-ings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command may be entered to read the status register. The system controller can detect the completion of a pro-gram cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command mode until another valid command is written to the command register.Figure 8. Program & Read Status Operation80hR/B Address & Data Input I/O0PassData10h70hFailt PROGI/OxCol. Add.1,2 & Row Add.1,2"0""1"Col. Add.1,2Figure 9. Random Data Input In a Page80hR/B Address & Data Input I/O0Pass10h70hFailt PROG85hAddress & Data InputI/OxCol. Add.1,2 & Row Add1,2Col. Add.1,2 DataData"0""1"Copy-Back ProgramThe Copy-Back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The ben-efit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copy-ing-program with the address of destination page. A read operation with "35h" command and the address of the source page moves the whole 2,112-byte data into the internal data buffer. As soon as the device returns to Ready state, Page-Copy Data-input com-mand (85h) with the address cycles of destination page followed may be written. The Program Confirm command (10h) is required to actually begin the programming operation. During tPROG, the device executes EDC of itself. Once the program process starts, the Read Status Register command (70h) or Read EDC Status command (7Bh) may be entered to read the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register.When the Copy-Back Program is complete, the Write Status Bit(I/O 0) and EDC Status Bits (I/O 1 ~ I/O 2) may be checked(Figure 10& Figure 11& Figure 12). The internal write verification detects only errors for "1"s that are not successfully programmed to "0"s and the internal EDC checks whether there is only 1-bit error for each 528-byte sector of the source page. More than 2-bit error detection is not available for each 528-byte sector. The command register remains in Read Status command mode or Read EDC Status com-mand mode until another valid command is written to the command register.During copy-back program, data modification is possible using random data input command (85h) as shown in Figure11. But EDC status bits are not available during copy back for some bits or bytes modified by Random Data Input operation. However, in case of the 528 byte sector unit modification, EDC status bits are available.Figure 10. Page Copy-Back Program Operation00hR/B Add.(4Cycles)I/O0Pass85h 70h/7Bh Failt PROGAdd.(4Cycles) t R Source Address Destination Address35h10h I/OxCol. Add.1,2 & Row Add.1,2Col. Add.1,2 & Row Add.1,2Figure 11. Page Copy-Back Program Operation with Random Data Input00hR/B Add.(4Cycles)85h 70ht PROGAdd.(4Cycles) t RSource AddressDestination AddressData 35h10h 85hData Add.(2Cycles) There is no limitation for the number of repetition.I/OxCol. Add.1,2 & Row Add.1,2Col. Add.1,2 & Row Add.1,2Col. Add.1,2Note: 1. For EDC operation, only one time random data input is possible at the same address.Note : 1. Copy-Back Program operation is allowed only within the same memory plane.2. On the same plane, It’s prohibited to operate copy-back program from an odd address page(source page) to an even address page(target page) or from an even address page(source page) to an odd address page(target page). Therefore, the copy-back program is permitted just between odd address pages or even address pages."0""1"Note: 1. For EDC operation, only one time random data input is possible at the same address.。

AO4459中文资料

AO4459中⽂资料SymbolTyp Max 33406275R θJL 1824Maximum Junction-to-Lead CSteady-State°C/WThermal Characteristics ParameterUnits Maximum Junction-to-AmbientAt ≤ 10s R θJA °C/W Maximum Junction-to-Ambient ASteady-State °C/W AO4459AO4459SymbolMin TypMaxUnits BV DSS -30V -1T J =55°C-5I GSS ±100nA V GS(th)-1.5-1.85-2.5V I D(ON)-30A 3846T J =125°C53685872m ?g FS 11S V SD -0.78-1V I S-3.5A C iss 668830pF C oss 126pF C rss 92pF R g69?Q g (10V)12.716nC Q g (4.5V) 6.4nC Q gs 2nC Q gd 4nC t D(on)7.7ns t r 6.8ns t D(off)20ns t f 10ns t rr 2230ns Q rr15nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.DYNAMIC PARAMETERS Maximum Body-Diode Continuous CurrentGate resistanceV GS =0V, V DS =0V, f=1MHzV GS =0V, V DS =-15V, f=1MHz Input Capacitance Output Capacitance Turn-On Rise Time Turn-Off DelayTime V GS =-10V, V DS =-15V, R L =2.5?, R GEN =3?Turn-Off Fall TimeTurn-On DelayTime SWITCHING PARAMETERSTotal Gate Charge (4.5V)Gate Source Charge Gate Drain Charge Total Gate Charge (10V)V GS =-10V, V DS =-15V, I D =-6.5Am ?V GS =-4.5V, I D =-5AI S =-1A,V GS =0V V DS =-5V, I D =-6.5AR DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageI DSS µA Gate Threshold Voltage V DS =V GS I D =-250µA V DS =-24V, V GS =0VV DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery ChargeI F =-6.5A, dI/dt=100A/µsDrain-Source Breakdown Voltage On state drain currentI D =-250µA, V GS =0V V GS =-10V, V DS =-5V V GS =-10V, I D =-6.5AReverse Transfer Capacitance I F =-6.5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev0 Sept 2006AO4459AO4459。

B82790中文资料

B82790中⽂资料Rated voltage 42 VAC/80 DC Rated current 200 to 1000 mA Rated inductance 5 m H to 4,7 mH Construction■Current-compensated ring core choke with ferrite core ■Bifilar winding (B82790C0*/K0*)■Sector winding (B82790S0*/L0*)Features■Case flame-retardant as per UL 94 V-0■Suitable for reflow solderingSpecial types for conductive adhesionand ambient temperatures up to 150°C on request Applications■B82790C0*/K0*:Suppression of asymmetrical interference coupled in on lines,whereas data signals up to some MHz can pass unaffectedly ■B82790S0*/L0*:Suppression of asymmetrical and symmetrical interferencecoupled in on lines. The high-frequency portions of the symmetrical data signal are decreased so far that EMC problems can be significantly reduced.Terminals■Lead-free tinnedMarkingManufacturer, ordering code (short form),date of manufacture, coded (year, day of week, calender week)Delivery modeBlister tape, reel packingFor details on taping, packing and packing units see data book 2000"Chokes and Inductors", page 302Double ChokesB82790S0*/L0*N2Dimensional drawingLayout recommendationB82790S0*/L0*N2Double ChokesTechnical data and measuring conditions Characteristics and ordering codes Rated voltage V R 42 VAC (50/60 Hz)80 VDCRated current I R Referred to 50 Hz and 60°C ambient temperature Rated inductance LRMeasured with HP 4275Aat L ≤1mH =100kHz, 0,1 mAL >1mH =10kHz, 0,1 mA (specified per winding)Inductance tolerance L ≤0,47mH:±30%L >0,47mH: –30/+50%Inductance decrease ?L /L 0<10% at dc magnetic bias with I RStray inductance L SMeasured with HP 4275A.Measuring frequency at L ≤11µH =1MHz,5mAL >11µH =100kHz, 5 mA DC resistance R typ Typical values, measured at 20°C ambient temperature Solderability(215±3)°C, (3±0,3)swetting of soldering area ≥95%in accordance with IEC 60068-2-58Climatic category 40/125/56 (– 40°C/+ 125°C/56 days damp heat test)in accordance with IEC 60068-1WeightApprox. 0,3 gL R mH L S, typ nH I R mA R typ m ?V TVDC, 2 s Ordering code 1)0,005501000100250B82790C0502N2010,01150500120250B82790C0113N2010,025 150500130250B82790C0253N2010,0251500500130250B82790S0253N2010,051 200500160250B82790C0513N2010,0512000500160250B82790S0513N2010,470200500200750B82790C0474N2151,0250500200750B82790C0105N2402,2250400400750B82790C0225N2654,7 300200550750B82790C0475N265B82790S0*/L0*N2Double ChokesInsertion loss a e (typical values at Z = 50 ?)asymmetrical, all branches in parallel (common mode)symmetrical (differential mode)L R = 0,005 mHL= 0,025 mH (low L )L= 0,011 mHB82790S0*/L0*N2Double ChokesInsertion loss a e (typical values at Z = 50 ?)asymmetrical, all branches in parallel (common mode)symmetrical (differential mode)L R = 0,051 mH (low L S )L= 0,47 mHL= 0,051 mH (high L )L= 1,0 mHB82790S0*/L0*N2Double ChokesB82790S0*/L0*N2 Double ChokesInsertion loss a e (typical values at Z = 50 ?)asymmetrical, all branches in parallel (common mode)symmetrical (differential mode)Published by EPCOS AGCorporate Communications, P.O. Box 80 17 09, 81617 Munich, GERMANY( ++49 89 636 09, FAX (089) 636-2 2689EPCOS AG 2002. Reproduction, publication and dissemination of this brochure and the informa-tion contained therein without EPCOS’ prior express consent is prohibited.Purchase orders are subject to the General Conditions for the Supply of Products and Services of the Electrical and Electronics Industry recommended by the ZVEI (German Electrical and Electronic Manufacturers’ Association), unless otherwise agreed.This brochure replaces the previous edition.For questions on technology, prices and delivery please contact the Sales Offices of EPCOS AG or the international Representatives.Due to technical requirements components may contain dangerous substances. For information on。

技术资料表必填项说明文档

技术资料表必填项说明文档1.由于各类通信系统必填项要求不一样，因此必填项按照通信系统分类规定。

标记灰色的参数作为必填项。

2.本文档设置的必填项是台站核查工作需重点核查的内容，非必填项并非不需填写，应尽量填写。

3.本文档设置的必填项为对A库的要求，根据“关于台站核查工作部分问题的指导意见”的要求，需要进B库的台站数据，其数据项另行要求。

4.短波便携台继续按原要求选择国无管表4填写。

5.无线数传电台原则要求填写国无管表5，考虑到目前部分点对多点的应用方式，多余8个通信方向的无线数传台可选择填写国无管表13，之前选择国无管5填写的数据可不变。

6.发射、接收频点和发射、接收频率范围根据通信系统具体应用情况选择一项填写即可。

7.单收台站无需填写发射参数，包括发射频率、功率等。

8.型号核准代码以1999年6月1日为界限，之前设置的无线电台可以不填，之后设置的无线电台必须填写。

9.短波电台填写国无管表3，台站地址、地理坐标、海拔高度均为必填项，如果是便携台，则以上三项可不填写。

10.船舶电台如果已指配呼号，则必须填写。

11.地球站如果是固定站，则台站地址、地理坐标、海拔高度、天线方位角、天线仰角等均为必填项，如果非固定站，以上五项可不填写。

地面固定业务台（站）技术资料申报表（1GHz以上数字微波）国无管表5 TF____地面固定业务台（站）技术资料申报表（点对点/点对多点）国无管表5 TF____地面固定业务台（站）技术资料申报表（扩频通信）国无管表5 TF____地面固定业务台（站）技术资料申报表（MMDS）国无管表5 TF____地面固定业务台（站）技术资料申报表（3.5GHz固定无线接入）国无管表5 TF____地面固定业务台（站）技术资料申报表（26GHz LMDS）国无管表5 TF____30MHz以下无线电台（站）技术资料申报表(短波通信系统)国无管表3H____陆地移动电台技术资料申报表(短波通信系统便携台)国无管表4 LM____蜂窝无线电通信基站技术资料申报表（公众移动通信系统）国无管表11C____2006年版中华人民共和国信息产业部制直放站技术资料申报表（公众移动通信系统）2006年版中华人民共和国信息产业部制蜂窝无线电通信基站技术资料申报表（铁路GSM-R）2006年版中华人民共和国信息产业部制蜂窝无线电通信基站技术资料申报表（集群通信系统）国无管表11C____2006年版中华人民共和国信息产业部制蜂窝无线电通信基站技术资料申报表（SCDMA）2006年版中华人民共和国信息产业部制无线电台(站)技术资料申报表(超短波对讲机基站)国无管表13 V____2006年版中华人民共和国信息产业部制陆地移动电台技术资料申报表（超短波对讲机移动台）国无管表4 LM____2006年版中华人民共和国信息产业部制陆地移动电台技术资料申报表（900MHz多信道选址系统）国无管表4 LM____2006年版中华人民共和国信息产业部制地面固定业务台（站）技术资料申报表（230MHz无线数传）国无管表5 TF____2006年版中华人民共和国信息产业部制地面固定业务台（站）技术资料申报表（800MHz无线数传，机车制式电台除外）国无管表5 TF____2006年版中华人民共和国信息产业部制无线电台(站)技术资料申报表（230MHz、800MHz频段无线数传）2006年版中华人民共和国信息产业部制无线电台(站)技术资料申报表(5.8GHz专用短距离通信)国无管表13 V____2006年版中华人民共和国信息产业部制无线电台(站)技术资料申报表(寻呼通信系统)国无管表13 V____2006年版中华人民共和国信息产业部制陆地移动电台技术资料申报表（机车制式电台）2006年版中华人民共和国信息产业部制广播电台技术资料申报表（广播业务）国无管表7 B____2006年版中华人民共和国信息产业部制雷达站技术资料申报表（雷达站）2006年版中华人民共和国信息产业部制船舶电台技术资料申报表（渔船）国无管表8S____2006年版中华人民共和国信息产业部制船舶电台技术资料申报表（非渔船）国无管表8S____2006年版中华人民共和国信息产业部制地球站技术资料申报表（非卫星移动业务地球站）国无管表6E____2006年版中华人民共和国信息产业部制无线电台(站)技术资料申报表(30MHz以上航空移动、航空导航)国无管表13 V____2006年版中华人民共和国信息产业部制无线电台(站)技术资料申报表(30MHz以上岸台)国无管表13 V____2006年版中华人民共和国信息产业部制无线电台(站)技术资料申报表(WLAN)国无管表13 V____2006年版中华人民共和国信息产业部制。

B82799S0223N001;B82799S0513N001;中文规格书,Datasheet资料

Data and signal line chokesCommon-mode chokes, ring core, EIA 1812 0.011 … 0.47 mH, 200 … 300 mA, 60 °CSeries/Type:B82799C0/S0Date:October 2008Rated voltage 42 V AC/80 V DCRated inductance 0.011 mH to 0.47 mHRated current 200 mA to 300 mAConstruction■Current-compensated ring core double choke■Ferrite core■LCP case (UL 94 V-0)■Silicone potting■Bifilar winding (B82799C0)■Sector winding (B82799S0)Features■150 °C version■Qualified to AEC-Q200■Suitable for reflow soldering■Suitable for conductive adhesion due gold-plated terminals■RoHS-compatibleFunction■B82799C0:Suppression of asymmetrical interference coupled in on lines,whereas data signals up to some MHz can pass unaffectedly.■B82799S0:Suppression of asymmetrical and symmetrical interference (by L stray) coupled in on lines. The high-frequency portions of the symmetrical data signal are decreased so far that EMC problems can besignificantly reduced.Applications■Automotive applications, e.g. CAN busTerminals■Base material CuSn6■Layer composition Ni, Ag, Au■Electro-platedMarking■Marking on component: Manufacturer, bifilar or sectorwinding (coded), L value (nH, coded), date of manufacture (YWWD)■Minimum data on reel: Manufacturer, ordering code,L value and tolerance, quantity, date of packingDelivery mode and packing unitCommon-mode chokes, ring core, EIA 1812Dimensional drawing and pin configurationLayout recommendationTaping and packing Blister tapeReelDimensions in mmDimensions in mmCommon-mode chokes, ring core, EIA 1812Technical data and measuring conditions Characteristics and ordering codes Rated voltage V R 42 V AC (50/60 Hz) / 80 V DC Rated temperature T R 60 °CRated current I RReferred to 50 Hz and rated temperatureApplicable current I Rfor high temperature applications 0.5 × I R ,referred to 50 Hz and 150°C ambient temperature Rated inductance L R Measured with Agilent 4284A at 100 kHz, 0.1 mA, 20 °C Inductance is specified per winding.Inductance tolerance ±30% at 20 °CInductance decrease ΔL/L < 10% at DC magnetic bias with I R , 20 °CStray inductance L stray,typMeasured with Agilent 4284A, 5 mA, 20 °C, typical values Measuring frequency:L R ≤ 11 μH = 1 MHzL R > 11 μH = 100 kHz DC resistance R typ Measured at 20°C, typical values, specified per winding SolderabilitySnPb:(215 ±3) °C, (3 ±0.3) s Sn96.5Ag3.0Cu0.5:(245 ±5) °C, (3 ±0.3) s Wetting of soldering area ≥ 95%(to IEC 60068-2-58)Resistance to soldering heat (260 ±5) °C, (10 ±1) s (to IEC 60068-2-58)Climatic category55/150/56 (to IEC 60068-1)Storage conditions (packaged)–25 °C … +40 °C, ≤ 75% RH WeightApprox. 0.09 gL R mH L stray,typ nH I R mA R typ m ΩV test V DC, 2 s Ordering code0.011 40300120250B82799C0113N0010.02260250170250B82799C0223N0010.0221200250170250B82799S0223N0010.03370200200250B82799C0333N0010.0331500200200250B82799S0333N0010.05190200250250B82799C0513N0010.0512300200250250B82799S0513N0010.10 50300150750B82799C0104N0010.22 60200200750B82799C0224N0010.33 70200250750B82799C0334N0010.47100200320750B82799C0474N001Common-mode chokes, ring core, EIA 1812Insertion loss α (typical values at |Z| = 50 Ω, 20 °C)asymmetrical, all branches in parallel (common mode)symmetrical (differential mode)L R = 0.011 mHL R = 0.022 mH (high L stray)L R = 0.022 mH (low L stray) L R = 0.033 mH (low L stray)Common-mode chokes, ring core, EIA 1812Insertion loss α (typical values at |Z| = 50 Ω, 20 °C)asymmetrical, all branches in parallel (common mode)symmetrical (differential mode)L R = 0.033 mH (high L stray) L R = 0.051 mH (high L stray)L R = 0.051 mH (low L stray) L R = 0.10 mHCommon-mode chokes, ring core, EIA 1812L R = 0.22 mH L R = 0.47 mH L R = 0.33 mHCurrent derating I op/I R versus ambient temperatureInsertion loss α (typical values at |Z| = 50 Ω, 20 °C)asymmetrical, all branches in parallel (common mode)symmetrical (differential mode)Common-mode chokes, ring core, EIA 1812Recommended reflow soldering curvePb containing solder material (based on CECC 00802 edition 2)Pb-free solder material (based on JEDEC J-STD 020C)T 1°C T 2°C T 3°C T 4°C t 1s t 2s t 3s150200217250< 110< 90< 40 @ T 4 –5 °CCommon-mode chokes, ring core, EIA 1812■Please note the recommendations in our Inductors data book (latest edition) and in the data sheets.–Particular attention should be paid to the derating curves given there.–The soldering conditions should also be observed. Temperatures quoted in relation to wave soldering refer to the pin, not the housing.■If the components are to be washed varnished it is necessary to check whether the washing varnish agent that is used has a negative effect on the wire insulation, any plastics that are used, or on glued joints. In particular, it is possible for washing varnish agent residues to have a negative effect in the long-term on wire insulation.■The following points must be observed if the components are potted in customer applications: –Many potting materials shrink as they harden. They therefore exert a pressure on the plastic housing or core. This pressure can have a deleterious effect on electrical properties, and in extreme cases can damage the core or plastic housing mechanically.–It is necessary to check whether the potting material used attacks or destroys the wire insulation, plastics or glue.–The effect of the potting material can change the high-frequency behaviour of the components.■Ferrites are sensitive to direct impact. This can cause the core material to flake, or lead to breakage of the core.■Even for customer-specific products, conclusive validation of the component in the circuit can only be carried out by the customer.The following applies to all products named in this publication:1.Some parts of this publication contain statements about the suitability of our products forcertain areas of application. These statements are based on our knowledge of typical requirements that are often placed on our products in the areas of application concerned. We nevertheless expressly point out that such statements cannot be regarded as binding statements about the suitability of our products for a particular customer application.As a rule, EPCOS is either unfamiliar with individual customer applications or less familiar with them than the customers themselves. For these reasons, it is always ultimately incumbent on the customer to check and decide whether an EPCOS product with the properties described in the product specification is suitable for use in a particular customer application.2.We also point out that in individual cases, a malfunction of electronic components or failurebefore the end of their usual service life cannot be completely ruled out in the current state of the art, even if they are operated as specified. In customer applications requiring a very high level of operational safety and especially in customer applications in which the malfunction or failure of an electronic component could endanger human life or health (e.g. in accident prevention or life-saving systems), it must therefore be ensured by means of suitable design of the customer application or other action taken by the customer (e.g. installation of protective circuitry or redundancy) that no injury or damage is sustained by third parties in the event of malfunction or failure of an electronic component.3.The warnings, cautions and product-specific notes must be observed.4.In order to satisfy certain technical requirements, some of the products described in thispublication may contain substances subject to restrictions in certain jurisdictions (e.g.because they are classed as hazardous). Useful information on this will be found in our Material Data Sheets on the Internet (/material). Should you have any more detailed questions, please contact our sales offices.5.We constantly strive to improve our products. Consequently, the products described in thispublication may change from time to time. The same is true of the corresponding product specifications. Please check therefore to what extent product descriptions and specifications contained in this publication are still applicable before or when you place an order.We also reserve the right to discontinue production and delivery of products.Consequently, we cannot guarantee that all products named in this publication will always be available.The aforementioned does not apply in the case of individual agreements deviating from the foregoing for customer-specific products.6.Unless otherwise agreed in individual contracts, all orders are subject to the current versionof the “General Terms of Delivery for Products and Services in the Electrical Industry”published by the German Electrical and Electronics Industry Association(ZVEI).7.The trade names EPCOS, BAOKE, Alu-X, CeraDiode, CSMP, CSSP, CTVS, DSSP, MiniBlue,MKK, MLSC, MotorCap, PCC, PhaseCap, PhaseCube, PhaseMod, SIFERRIT, SIFI, SIKOREL, SilverCap, SIMDAD, SIMID, SineFormer, SIOV, SIP5D, SIP5K, ThermoFuse, WindCap are分销商库存信息:EPCOSB82799S0223N001B82799S0513N001。

ASTM B827

Designation:B827–97(Reapproved2003)Standard Practice forConducting Mixed Flowing Gas(MFG)Environmental Tests1 This standard is issued under theﬁxed designation B827;the number immediately following the designation indicates the year of original adoption or,in the case of revision,the year of last revision.A number in parentheses indicates the year of last reapproval.A superscript epsilon(e)indicates an editorial change since the last revision or reapproval.1.Scope1.1This practice provides procedures for conducting envi-ronmental tests involving exposures to controlled quantities of corrosive gas mixtures.1.2This practice provides for the required equipment and methods for gas,temperature,and humidity control which enable tests to be conducted in a reproducible manner.Repro-ducibility is measured through the use of control coupons whose corrosionﬁlms are evaluated by mass gain,coulometry, or by various electron and X-ray beam analysis techniques. Reproducibility can also be measured by in situ corrosion rate monitors using electrical resistance or mass/frequency change methods.1.3The values stated in SI units are to be regarded as the standard.1.4This standard does not purport to address all of the safety concerns,if any,associated with its use.It is the responsibility of the user of this standard to become familiar with all hazards including those identiﬁed in the appropriate Material Safety Data Sheet for this product/material as pro-vided by the manufacturer,to establish appropriate safety and health practices,and determine the applicability of regulatory limitations prior to use.See5.1.2.4.2.Referenced Documents2.1ASTM Standards:B542Terminology Relating to Electrical Contacts and Their Use2B765Guide for Selection of Porosity Tests for Electrode-posits and Related Metallic Coatings3B808Test Method for Monitoring of Atmospheric Corro-sion Chambers by Quartz Crystal Microbalances2B810Test Method for Calibration of Atmospheric Corro-sion Test Chambers by Change in Mass of Copper Cou-pons2B825Test Method for Coulometric Reduction of Surface Films on Metallic Test Samples2B826Test Method for Monitoring Atmospheric Corrosion Tests by Electrical Resistance Probes2B845Guide for Mixed Flowing Gas(MFG)Tests for Electrical Contacts2D1193Speciﬁcation for Reagent Water4D1607Test Method for Nitrogen Dioxide Content of the Atmosphere(Griess-Saltzman Reaction)5D2912Test Method for Oxidant Content of the Atmo-sphere(Neutral KI)6D2914Test Methods for Sulfur Dioxide Content of the Atmosphere(West-Gaeke Method)5D3449Test Method for Sulfur Dioxide in Workplace At-mospheres(Barium Perchlorate Method)6D3464Test Method for Average Velocity in a Duct Using a Thermal Anemometer5D3609Practice for Calibration Techniques Using Perme-ation Tubes5D3824Test Methods for Continuous Measurement of Ox-ides of Nitrogen in the Ambient or Workplace Atmosphere by the Chemiluminescent Method5D4230Test Method of Measuring Humidity With Cooled-Surface Condensation(Dew-Point)Hygrometer5E902Practice for Checking the Operating Characteristics of X-Ray Photoelectron Spectrometers7G91Practice for Monitoring Atmospheric SO2Using Sul-fation Plate Technique83.Terminology3.1Deﬁnitions relating to electrical contacts are in accor-dance with Terminology B542.4.Signiﬁcance and Use4.1Mixedﬂowing gas(MFG)tests are used to simulate or amplify exposure to environmental conditions which electrical1This practice is under the jurisdiction of ASTM Committee B02on Nonferrous Metals and Alloys and is the direct responsibility of Subcommittee B02.11onElectrical Contact Test Methods.Current edition approved June10,2003.Published July2003.Originally approved st previous edition approved in1997as B827-97.2Annual Book of ASTM Standards,V ol02.04.3Annual Book of ASTM Standards,V ol02.05.4Annual Book of ASTM Standards,V ol11.01.5Annual Book of ASTM Standards,V ol11.03.6Discontinued;see1990Annual Book of ASTM Standards,V ol11.03.7Annual Book of ASTM Standards,V ol03.06.8Annual Book of ASTM Standards,V ol03.02.1Copyright©ASTM International,100Barr Harbor Drive,PO Box C700,West Conshohocken,PA19428-2959,United States.contacts or connectors can be expected to experience in various application environments (1,2).94.2Test samples which have been exposed to MFG tests have ranged from bare metal surfaces,to electrical connectors,and to complete assemblies.4.3The speciﬁc test conditions are usually chosen so as to simulate,in the test laboratory,the effects of certain represen-tative ﬁeld environments or environmental severity levels on standard metallic surfaces,such as copper and silver coupons or porous gold platings (1,2).4.4Because MFG tests are simulations,both the test con-ditions and the degradation reactions (chemical reaction rate,composition of reaction products,etc.)may not always re-semble those found in the service environment of the product being tested in the MFG test.A guide to the selection of simulation conditions suitable for a variety of environments is found in Guide B 845.4.5The MFG exposures are generally used in conjunction with procedures which evaluate contact or connector electrical performance such as measurement of electrical contact resis-tance before and after MFG exposure.4.6The MFG tests are useful for connector systems whose contact surfaces are plated or clad with gold or other precious metal ﬁnishes.For such surfaces,environmentally produced failures are often due to high resistance or intermittences caused by the formation of insulating contamination in the contact region.This contamination,in the form of ﬁlms and hard particles,is generally the result of pore corrosion and corrosion product migration or tarnish creepage from pores in the precious metal coating and from unplated base metal boundaries,if present.4.7The MFG exposures can be used to evaluate novel electrical contact metallization for susceptibility to degradation due to environmental exposure to the test corrosive gases.4.8The MFG exposures can be used to evaluate the shielding capability of connector housings which may act as a barrier to the ingress of corrosive gases.4.9The MFG exposures can be used to evaluate the susceptibility of other connector materials such as plastic housings to degradation from the test corrosive gases.4.10The MFG tests are not normally used as porosity tests.For a guide to porosity testing,see Guide B 765.4.11The MFG tests are generally not applicable where the failure mechanism is other than pollutant gas corrosion such as in tin-coated separable contacts.5.Apparatus5.1Apparatus required to conduct MFG tests are divided into four major categories,corrosion test chamber,gas supply system,chamber monitoring system,and chamber operating system.5.1.1Corrosion Test Chamber :5.1.1.1The chamber shall consist of an enclosure made of nonreactive,low-absorbing,nonmetallic materials contained within a cabinet or oven capable of maintaining the tempera-ture to a maximum tolerance of 61°C with a preferred tolerance held to 60.5°C within the usable chamber working space accordance with 7.3,with a means to introduce and exhaust gases from the chamber.5.1.1.2The chamber isolates the reactive gases from the external environment.Chamber materials that are not low-absorbing can affect test conditions by absorbing or emitting reactive gases,leading to control and reproducibility problems.The chamber construction shall be such that the leak rate is less than 3%of the volume exchange rate.5.1.1.3The chamber shall have provision for maintaining uniformity of the average gas ﬂow velocity within 620%of a speciﬁed value or of the chamber average when the chamber is empty.For chambers with a dimension of more than 0.5m,measurement points shall be in accordance with Test Method B 810.For chambers with all dimensions of less than 0.5m,a minimum of ﬁve points shall be measured at locations in the plane of sample exposure (perpendicular to the expected ﬂow direction)that are equidistant from each other and the walls of the chamber.After all ﬁve or more data values are recorded,all measurements shall be repeated a second time.After the two sets of measurements are recorded,a third complete set shall be recorded.The arithmetic average of the 15or more measure-ments shall be the chamber average.See 7.5and 7.6.8.If a hot wire anemometer is used for gas velocity measurements,it shall be made in accordance with Test Method D 3464,with the exception that sample sites shall be in accordance with Test Method B 810.5.1.1.4A sample access port is desirable.This should be designed such that control coupons can be removed or replaced without interrupting the ﬂow of gases.Corrosion test chamber corrosion rates have been shown to be a function of the presence or absence of light (3,4).Provision for controlling the test illumination level in accordance with a test speciﬁcation shall be made.5.1.1.5Examples of test chamber systems are diagrammed in Figs.1-3.They are not to be considered exclusive examples.5.1.2Gas Supply System :5.1.2.1Description and Requirements —The gas supply sys-tem consists of ﬁve main parts:a source of clean,dry,ﬁltered air;a humidity source;corrosive gas source(s);gas delivery system;and corrosive gas concentration monitoring system(s).Total supply capacity must be such as to meet requirements for control of gas concentrations.The minimum number of volume changes is determined by the requirement that the concentra-tion of corrosive gases be maintained within 615%between gas inlet and outlet.This is veriﬁed by measurement of the gas concentrations near the gas inlet upstream of the usable chamber working volume and comparing with gas concentra-tions measured downstream of the usable chamber working volume just prior to the chamber exhaust;these values shall be within 615%(see 7.6).Alternative methods of demonstrating compliance with the maximum allowable concentration gradi-ent are acceptable.Normally,a conditioned chamber equili-brates within several hours after sample loading and start of the corrosive gas supply.Times longer than 2h shall be reported in the test report;see Section 8.A guide to estimating supply requirements is provided in Appendix X1.9The boldface numbers in parentheses refer to the list of references at the end of thisstandard.N OTE 1—Guidance:when inlet to outlet concentrations vary by more than 615%,it usually indicates an overloaded chamber.5.1.2.2Clean,Dry,Filtered Air Source —Gases other than oxygen and nitrogen that are present in the dry air source shall be less than or equal to those deﬁned by OHSA Class D limits with the following additional constraint.Gases other than nitrogen,oxygen,carbon dioxide,noble gases,methane,ni-trous oxide,and hydrogen shall be less than 0.005(ppm)by volume total and shall be High Efficiency Particulate Arrestants (HEPA)ﬁltered.5.1.2.3Humidity Source —The humidity source shall use distilled or deionized water,Speciﬁcation D 1193,Type 1or better,and shall introduce no extraneous material.The humid-ity source shall be maintained equivalent to Speciﬁcation D 1193Type II or better,with the exception that electrical resistivity shall be maintained equivalent to Speciﬁcation D 1193Type IV .The time averaged value of humidity shall be within 61%relative humidity of the speciﬁed value with absolute variations no greater than 63%relative humidity from the speciﬁed value.5.1.2.4Corrosive Gas Sources —Corrosive (test)gases,such as nitrogen dioxide,hydrogen sulﬁde,chlorine,sulfur dioxide,etc.shall be of chemically pure 10grade or better.Such gases are frequently supplied in a carrier gas such as nitrogen which shall be of Pre-Puriﬁed 10grade or better.(Warning —This practice involves the use of hazardous materials,proce-dures,and equipment.The gas concentrations in the test chamber may be within permissible exposure limits (PEL).11However,concentrations in the compressed gas cylinders or permeation devices are often above the PEL,and may exceed the immediately dangerous to life and health level (IDHL).This practice does not address safety issues associated with MFG testing.)5.1.2.5Gas Delivery System —The gas delivery system is comprised of three main parts:gas supply lines,gas control valves and ﬂow controllers,and a mixing chamber.The gas delivery system shall be capable of delivering gases at the required concentrations and rates within the test chamber.(1)All materials used for the gas transport system must not interact with the gases to the extent that chamber gas concen-trations are affected.(2)Gases,make-up air,and water vapor must be thor-oughly mixed before gas delivery to the samples under test in the chambers.Care must be taken to ensure absence of aerosol formation in the mixing chamber whereby gases are consumed in the formation of particulates which may interfere with gas concentration control and may introduce corrosion processes which are not representative of gaseous corrosion mechanisms.Aerosol formation may be detected by the presence of a visible ﬁlm or deposit on the interior surface of the gas system where the gases are mixed.(3)Any fogging of the tubing walls or mixing chamber walls can be taken to be an indication of a loss of corrosive gases from the atmosphere.Final mixing of the speciﬁed gases should occur inside a separate area of,or as close as possible to,the test chamber so as to ensure thermal equilibration with the test chamber.(4)Flow measurement capability is required at the inlet of the chamber and also at the exhaust of negative pressure chambers to ensure the absence of uncalibrated gas streams.5.1.2.6Corrosive Gas Concentration Monitoring System —Standard measurement systems for very low level gas concen-trations are listed in Table 1,which provides for gases in common use in present mixed ﬂowing gas systems,for testing electrical contact performance.(1)Each instrument must be characterized for interference with the gases speciﬁed,both individually and mixed.(2)Depending on the exact equipment set used,it may not be possible to accurately measure the concentration of some gases,such as chlorine,in combination with any of the other gases.(3)The analytic instruments shall be maintained and calibrated electronically in accordance with the manufacturers’recommendations.Standard gas sources shall also be calibrated in accordance with the manufacturers’speciﬁcations,or in accordance with Practice D 3609.Gas concentration analyzers shall be calibrated to standard gas sources in accordance with the manufacturers’recommendations.They shall be calibrated10Chemically Pure and Pre-Puriﬁed are designations of Matheson Gas Co.,East Rutherford,NJ,for speciﬁc grades of purity of gas.Other vendors such as AIRCO have equivalent gas purities available sold under different terminology.11Pocket Guide to Chemical Hazards,National Institute for Occupational Safety and Health,U.S.Department of Health and Human Service,Publication #85-114,ﬁfthprinting.FIG.1Schematic Flow-Through Mixed Flowing Gas (MFG)TestSystembefore and after each test and whenever the indicated concen-tration changes exceed the allowed variation in the test speciﬁcation.(4)Control of the temperature and humidity within the test chamber itself is part of the chamber monitoring system which is described in 5.1.3N OTE 2—If the chlorine monitor is not being used during the test,it need not be calibrated during the test.5.1.3Chamber Monitoring System —Chamber monitoring systems are required to ensure test reproducibility from one test run to the next.Calibration of monitoring instruments isrequired periodically because the corrosive effects of mixed gas environments can affect instrument sensitivity and accu-racy.The chamber monitoring system must address four test parameters:temperature,humidity,gas concentrations,and corrosivity.5.1.3.1Temperature Monitoring —Temperature monitoring is usually a simple thermocouple or other temperature mea-surement device capable of the required resolution of 0.2°C and accuracy of 60.5°C within the temperature range required by the test speciﬁcation.For test temperatures above 40°C,see7.6.5.FIG.2Schematic Vertical Recirculating Mixed Flowing Gas (MFG)TestSystemFIG.3Schematic Horizontal Recirculating Mixed Flowing Gas (MFG)TestSystem5.1.3.2Humidity Monitoring —Humidity must be deter-mined by an apparatus with a resolution of 0.5%relative humidity and an accuracy of 61%relative humidity.Test Method D 4230describes a dew point method which meets this requirement.For test temperatures above 40°C,see 7.6.5.5.1.3.3Corrosive Gas Monitoring —Chamber corrosive gas concentration monitoring must be accomplished by provision of sampling lines from the test chamber to the gas concentra-tion analyzers.These sampling lines must be maintained above the chamber dew point temperature.The interior of the gas concentration analyzers shall also be maintained above the chamber dew point temperature.For test temperatures above 40°C,see7.6.5.5.1.3.4Chamber Corrosivity Monitoring —Chamber corro-sivity monitoring can be accomplished by a number of comple-mentary techniques,none of which provide both a comprehen-sive analysis of the corrosion process and an instantaneous indication of the corrosion rate.Five acceptable techniques are as follows:metal coupon corrosion mass gain,corrosion ﬁlm analysis by coulometric reduction,corrosion ﬁlm analysis by electron or X-ray beam analysis,quartz crystal microbalance mass gain,and electrical resistance measurement of corroding metal conductors (see Note 3).The ﬁrst three provide infor-mation subsequent to the test whereas the last two can be used in situ in the test chamber to provide information during the test itself.See Appendix X2for a discussion of these methods.It is recommended that the test requester specify chamber corrosivity monitoring methods to be used.N OTE 3—A potential sixth method utilizing porous gold coupons is under investigation.5.1.4Chamber Operating System —The chamber operating system is comprised of equipment and software necessary to adequately control all of the variables of the test.This will include data logging and alert procedures for operation outside of desired bounds.Some form of computer control is highly recommended to assure satisfactory operation during unat-tended periods and for data tracking for failure analysis in case the test is disrupted.6.Reagents and Materials6.1Materials required to conduct ﬂowing mixed gas tests are as follows:6.1.1Purity of Water —Water for humidity generation shall be equivalent to Type 1or better of Speciﬁcation D 1193.6.1.2Carrier Gas —Carrier gas such as nitrogen shall not introduce reactive constituents into the test atmosphere to an amount of more than 5%of any speciﬁed corrosive test atmosphere constituent.6.1.3Clean Filtered Air —Clean ﬁltered air as required for makeup to support the necessary exchange rate,in accordance with7.6.7.1(2)is speciﬁed in 5.1.2.2.6.1.4Corrosive Gases —Corrosive gases shall be chemi-cally pure 9grade or equivalent.6.1.5Corrosivity Monitor Materials (CMM)—CMM are comprised of the coupons that are exposed to the test atmo-sphere for mass gain or coulometric reduction in accordance with Test Methods B 810and B 825,respectively,the coated quartz crystals used for microbalance measurements in accor-dance with Test Method B 808,resistance monitor materials in accordance with Test Method B 826,or other coupons for analytical techniques described in Appendix X2.3.7.Procedure7.1The following procedure is comprised of requirements and other comments provided as a general guide to achieving reproducible results with MFG testing.This procedure is compatible with most test facilities;however,differences in apparatus,test conditions,or local safety requirements may necessitate alternative procedures.Any deviations shall be reported with all test results (see Section 8).7.2The procedure is comprised of the following major activities:test chamber calibration,sample preparation,test chamber set-up,test chamber start-up,test chamber operation during test duration,test chamber shut-down,and reporting requirements.7.3Test Chamber Calibration —The spatial uniformity of the corrosivity of test chambers larger than 0.5m on a side shall be measured in accordance with Test Method B 810,which describes the required placement scheme for calibration samples which are used to determine corrosion rate uniformity over the entire chamber volume.For chambers smaller than 0.5m on a side or chambers of unusual geometry,use sufficient samples for corrosivity characterization so as to clearly delin-eate the usable chamber working volume as deﬁned in this paragraph.This proﬁling shall be done when the chamber is initially built and after any structural change to the chamber that may affect the ﬂow of test gas over the test samples.Test Method B 810describes a procedure using mass gain.Alter-native means to characterize corrosion rates such as Test Method B 825,Coulometric Reduction,or Test Method B 808,Quartz Crystal Microbalance,in accordance with 5.1.3.4are also acceptable.A minimum of three corrosivity monitors of a given type must be used,if possible,in each chamber location.The average corrosivity for that location must be within 15%of the average for the entire chamber.When a single monitor has to be used at a location,due to chamber size limitations or monitor geometry,the average corrosivity for that location must be based upon three consecutive calibration runs.These requirements deﬁne the usable chamber working space.N OTE 4—Proﬁling does not remove the necessity to provide andTABLE 1Instrumental Methods for Gaseous ComponentsN OTE 1—Commercial equipment such as Monitor Labs 8770,Hydro-gen Sulﬁde Converter,in conjunction with Monitor Labs 8850,Sulfur Dioxide Analyzer is suitable for this purpose.N OTE 2—Commercial equipment such as Monitor Labs 8850,Sulfur Dioxide Analyzer is suitable for this purpose.N OTE 3—Commercial equipment such as Monitor Labs 8840,Nitrogen Oxides Analyzer is suitable for this purpose.Gas Suitable Instrumental Method Suitable ProcedureH 2S Photometric or luminescence See Note 1SO 2Photometric or luminescenceTest Methods D 2914,G 91,D 3449,see Note 2NO 2Chemiluminescence Method D 3824,see Note 3Cl 2Electrochemical or Reﬂectometric Test Method D 2912The instrument manufacturer’s instructions for delivering samples to the instru-ments should befollowed.evaluate CMM for each test run of the test chamber.7.4Sample Preparation—Two types of samples are used for these tests,CMM and the test samples being evaluated.Prepare CMM in accordance with their respective standards,such as Test Method B810.7.4.1Prepare the test samples in accordance with any agreement between vendor and user of the samples being tested.Such preparation shall be consistent with normal preparations expected when test samples would be exposed to normal application environments in their intended applications except when evaluation of preparation methods is the object of the test.7.5Test Chamber Set-Up—Place test samples and CMM in the chamber in a manner that is representative of the way the test samples would be used in the application environment,if known.This should be done in a consistent manner,such that the test results will be reproducible over time.7.5.1In general,the samples shall be suspended or held with their long dimension parallel to theﬂow of air and a minimum of5cm away from any surface to avoid boundary layer effects.It is particularly important that no test samples or CMM be shielded from the source of the pollutant gases by any control coupon,testﬁxture,test samples,test rack,or other obstruction placed upstream.7.5.2In general,when larger systems under test are being expressed to a MFG environment,the interior of the system under test will be underexposed due to the gettering or reaction of pollutant gases by the surrounding system surfaces.Under these circumstances,the system should be placed in the exposure chamber in a conﬁguration that is consistent with exposure in actualﬁeld conﬁguration.CMMs should be placed around the system under test.7.6Test Chamber Start-Up:7.6.1Test Conditions—Test conditions such as those given in Section8shall be speciﬁed by the test requester.Test Method B845is a guide to selection of such conditions for speciﬁcation purposes.7.6.2Avoidance of Condensation—Establish an apparatus speciﬁc start-up and shut-down procedure to avoid visible water condensation on the test samples and CMM at time of insertion into the chamber.Such condensation on the parts invalidates the test.To avoid condensation at start-up the parts under test shall be at a temperature that is greater than the dew point temperature of the chamber at insertion time.To avoid condensation at shut-down the laboratory temperature shall be greater than the dew point temperature of the exposure chamber at sample removal time.7.6.3Chamber Preparation—When contaminants such as condensed gases(for example,free sulfur or organic material from test samples)or corrosion particulate deposits are present or suspected,clean the inside of the chamber to reduce the concentration of adsorbed gases by wiping the interior walls with a clean,lint-free cloth before installing samples at the start of any test.Residual contamination can affect the accuracy of subsequent chlorine measurements.7.6.3.1An indication of the need for a wipe down would be an abnormally long time(in excess of20chamber gas exchanges for low-sulfur(for example,<0.020ppm H2S)tests or in excess of200chamber gas exchanges for high-sulfur tests)to reach10%or0.001ppm corrosive gas concentration levels after chamber shutdown.7.6.4Chamber Loading:7.6.4.1Place the test samples and control materials into the chamber when the samples,materials,and chamber are at ambient temperature and relative humidity in order to avoid visible condensation.Alternatively,samples at chamber tem-perature can be placed directly into a heated chamber at or below speciﬁed humidity.7.6.4.2For tests which require in situ measurements on the test samples,install necessary electrical access cabling at this time and make initial measurements,as required by the test speciﬁcation.7.6.5Chamber Heating—The practical upper limit to the test temperature for this procedure is determined by the internal temperature of the analyzers,including any auxiliary heating, such that condensation of the sampled gas stream will not occur within the instrument.In order to avoid condensation in the analytical instruments and sampling lines,the relative humidity of the sampled gas mixture in the sampling lines and analytical instruments shall not exceed80%relative humidity. This is generally accomplished by heating the sampling lines and instruments as required.Manufacturers of the analyzers should be consulted to determine maximum temperatures at which the analyzers can be maintained.Modiﬁcations of this procedure such as limiting chamber humidity to a wet-bulb temperature less than the instrument internal temperature during corrosive gas supply settings and subsequent elevation of humidity to speciﬁed values may be required for high temperature(for example,70°C),high-humidity corrosive gas tests.7.6.5.1Heat the chamber to the speciﬁed test temperature,if required.A holding time of at least1h is recommended to ensure temperature equilibration of the test samples.A longer time may be necessary for massive assemblies.7.6.6Chamber Humidiﬁcation:7.6.6.1Increase the chamber humidity to the speciﬁed test relative humidity,if required.7.6.7Gas Level Setting:7.6.7.1Conﬁrm that temperature and humidity are at equi-librium at speciﬁed test conditions.7.6.7.2When conducting multiple gas tests with chlorine as one of the corrosive gases,chlorine must be theﬁrst gas whose supply setting is established.This is because of interferences from other gases which are due to present limitations of the chlorine gas monitoring equipment in common use.Allow the chlorine levels to come to equilibrium in the chamber for at least1–2h.7.6.7.3Introduce all the other corrosive gases to the level speciﬁed and measure the gas concentrations(see5.1.2.6),in the test chamber in accordance with5.1.3.3;adjust the gas supply rates and volume exchange rate until the downstream gas concentrations are within615%or0.003ppm,whichever is larger,of the upstream concentrations and at the gas concentrations speciﬁed.Allow to stabilize and repeat mea-surement after1to2h to conﬁrm gas supply andvolume。

BENZ编码解读

10
0 1 2 3 4 5 6 7 8 9
13 Air compressor
0 Assemblies 1 Air compressor and attachment 2 Drive 3 Suction pump 4 Air lines on engine 5 6 7 8 9
16
0 1 2 3 4 5 6 7 8 9
WDB 210 0 35 1 A 141623 35
141623
a
WDB 210 WDB 210 0 0 35 1
底盘编号
A 141623
北星
制造厂商代码设计代号发动机类型型号 1 方向盘布置形式
35 A
141623
生产厂生产序列号
a
112 940 1 2
发动机编号
074641
北星
112
A------奔驰通用零件 B------包装材料奔驰精品防盗系统零件特种零件 C------可改装总成车身电缆车架 H------改装车零件大客车车身特制零件 N------奔驰标准件 Q------奔驰其它类零件 R------奔弛纱管用材 S------奔驰坐具零件 U------奔驰原料 W------奔驰专用工具 HWA----AMG改装件
Enging housing
Assemblies Crankcase upper section (W/cyl.)
04
07 Carburetor and injection pump
Assemblies Carburetor Throttle linkage Carburetor (contin,) accelerator pump Injection pump Injection timer and control Injection pump attachment Injection pump drive Lines on engine

常用ASC II码对照表

120
78
x
01111001
121
79
y
01111010
122
7A
z
01111011
123
7B
{
01111100
124
7C
|
01111101
125
7D
}
01111110
126
7E
~
01111111
127
7F
DEL (delete)
删除
74
4A
J
01001011
75
4B
K
01001100
76
4C
L
01001101
77
4D
M
01001110
78
4E
N
01001111
79
4F
O
01010000
80
50
P
01010001
81
51
Q
01010010
82
52
R
01010011
83
53
S
01010100
84
54
T
01010101
85
55
U
01010110
109
6D
m
01101110
110
6E
n
01101111
111
6F
o
01110000
112
70
p
01110001
113
71
q
01110010
114
72
r
01110011
115
73