DPA on quasi delay insensitive asynchronous circuits formalization and improvement
赛米控丹佛斯电子 Board_2S_SKYPER_32_R_Gold 数据表
1®Adaptor boardAdaptor boardOrder Nr. L5062801Board 2S SKYPER 32 R GoldFeatures•Two output channels •Gold nickel finish •Failure managementTypical Applications*•Adaptor board for SKYPER 32 IGBT drivers in bridge circuits for industrial applications •PCB with gold plating •DC bus up to 1000VRemarks•With external high voltage diode•Please Note: the insulation test is not performed as a series test atSEMIKRON and must be performed by the user•According to VDE 0110-20•Output charge can be expanded to 6,3µQ with boost capacitors•Insulation coordination in compliance with EN50178 PD2•Operating temperature is real ambient temperature around the driver core •Degree of protection: IP00Absolute Maximum Ratings SymbolConditionsValuesUnitV s Supply voltage primary 16V Iout PEAK Output peak current 15A Iout AVmax Output average current 50mA f max Max. switching frequency50kHz V CECollector emitter voltage sense across the IGBT1700V V isol IO Insulation test voltage input - output (AC, rms, 2s)4000V V isolPD Partial discharge extinction voltage, rms, Q PD ≤ 10pC1200V V isol12Insulation test voltage output 1 - output 2 (AC, rms, 2s)1500V R Gon minMinimum rating for external R Gon 1.5ΩR Goff min Minimum rating for external R Goff 1.5ΩT op Operating temperature -40...85°C T stgStorage temperature-40 (85)°CCharacteristics SymbolConditionsmin.typ.max.UnitV sSupply voltage primary side 14.41515.6V V i Input signal voltage on / off 15 / 0V V IT+Input threshold voltage (HIGH)12.3V V IT-Input threshold voltage (LOW) 4.6V V G(on)Turn on output voltage 15V V G(off)Turn off output voltage-7V t d(on)IO Input-output turn-on propagation time 1.1µs t d(off)IOInput-output turn-off propagation time1.1µsThis is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, chapter IX.*IMPORTANT INFORMATION AND WARNINGSThe specifications of SEMIKRON products may not be considered as guarantee or assurance of product characteristics ("Beschaffenheitsgarantie"). The specifications of SEMIKRON products describe only the usual characteristics of products to be expected in typical applications, which may still vary depending on the specific application. Therefore, products must be tested for the respective application in advance. Application adjustments may be necessary. The user of SEMIKRON products is responsible for the safety of their applications embedding SEMIKRON products and must take adequate safety measures to prevent the applications from causing a physical injury, fire or other problem if any of SEMIKRON products become faulty. The user is responsible to make sure that the application design is compliant with all applicable laws, regulations, norms and standards. Except as otherwise explicitly approved by SEMIKRON in a written document signed by authorized representatives of SEMIKRON, SEMIKRON products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. No representation or warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including without limitation, warranties of non-infringement of intellectual property rights of any third party. SEMIKRON does not assume any liability arising out of the applications or use of any product; neither does it convey any license under its patent rights, copyrights, trade secrets or other intellectual property rights, nor the rights of others. SEMIKRON makes no representation or warranty of non-infringement or alleged non-infringement of intellectual property rights of any third party which may arise from applications. Due to technical requirements our products may contain dangerous substances. For information on the types in question please contact the nearest SEMIKRON sales office. This document supersedes and replaces all information previously supplied and may be superseded by updates. SEMIKRON reserves the right to make changes.2。
量子态保真度 传输
量子态保真度传输英文回答：Quantum state fidelity is a measure of how well a quantum system can preserve its initial state during transmission or manipulation. It quantifies the similarity between the transmitted state and the original state. The higher the fidelity, the closer the transmitted state is to the original state.In quantum information processing, maintaining high fidelity is crucial for the successful transmission and manipulation of quantum states. Any loss or distortion of the quantum state can lead to errors and degrade the performance of quantum algorithms and protocols.To achieve high fidelity, several factors need to be considered. First, the quality of the quantum system itself is important. This includes the coherence time, which determines how long the quantum state can be preservedbefore it decoheres due to interactions with the environment. Additionally, the level of control and precision in manipulating the quantum state is crucial.Second, the transmission channel plays a significant role in fidelity. Quantum states can be transmitted through various physical systems, such as photons, ions, or superconducting circuits. Each system has its own characteristics and challenges in terms of maintaining fidelity. For example, in the case of photons, losses and noise in the optical fibers or detectors can degrade the fidelity. In the case of superconducting circuits, unwanted interactions with the environment can cause decoherence and reduce fidelity.Third, error correction techniques can be employed to enhance fidelity. Quantum error correction codes can detect and correct errors that occur during transmission or manipulation. These codes use additional qubits to encode the information redundantly, allowing for error detection and correction. By using error correction, the fidelity of the transmitted state can be significantly improved.In summary, maintaining high fidelity in quantum state transmission is crucial for the successful implementation of quantum information processing tasks. It requires a combination of high-quality quantum systems, carefully designed transmission channels, and error correction techniques.中文回答：量子态保真度是衡量量子系统在传输或操作过程中保持初始状态的能力的指标。
制冷专业英语大全e
制冷专业英语根本术语制冷refrigeration蒸发制冷evaporative refrigeration沙漠袋desert bag制冷机refrigerating machine制冷机械refrigerating machinery制冷工程refrigeration engineering制冷工程承包商refrigeration contractor制冷工作者refrigerationist制冷工程师refrigeration engineer制冷技术员refrigeration technician制冷技师refrigeration technician制冷技工refrigeration mechanic冷藏工人icer制冷安装技工refrigeration installation mechanic 制冷维修技工refrigeration serviceman冷藏链cold chain制冷与空调维修店refrigeration and air conditioning repair shop冷藏refrigerated prvservation一般制冷换热器英语换热器heat exchanger热交换器heat exchanger紧凑式换热器compact heat exchanger管式换热器tubular heat exchanger套管式换热器double-pipe heat exchanger间壁式换热器surface type heat exchanger外表式换热器surface type heat exchanger板管式换热器tube-on-sheet heat exchanger板翅式换热器plate-fin heat exchanger板式换热器plate heat exchanger螺旋板式换热器spiral plate heat exchanger平板式换热器flat plate heat exchanger顺流式换热器parallel flow heat exchanger逆流式换热器counter flow heat exchanger*流式换热器cross-flow heat echanger折流式换热器turn back flow heat exchanger直接接触式换热器direct heat exchanger旋转式换热器rotary heat exchanger刮削式换热器scraped heat exchanger热管式换热器heat pipe exchanger蓄热器recuperator壳管式换热器shell and tube heat exchanger管板tube plate可拆端盖removable head管束bundle of tube 管束尺寸size of tube bundle顺排管束in-line hank of tubes错排管束staggered hank of tubes盘管coil蛇形管serpentine coilU形管U-tube光管bare tube肋片管finned tube翅片管finned tube肋管finned tube肋管束finned tube bundle肋片fin套片plate fin螺旋肋spiral fin整体肋integral fin纵向肋longitudinal fin钢丝肋wire fin内肋inner fin肋片管尺寸size of fin tube肋片厚度fin thickness肋距spacing of fin肋片数pitch of fin肋片长度finned length肋片高度finned height肋效率fin efficiency换热面积heat exchange surface传热面积heat exchange surface冷却面积cooling surface加热外表heat exchange surface基外表primary surface扩展外表extended surface肋化外表finned surface迎风外表face area流通外表flow area净截面积net area;effective sectional area迎风面流速face velocity净截面流速air velocity at net area迎风面质量流速face velocity of mass净截面质量流速mass velocity at net area冷〔热〕媒有效流通面积effective area for cooling or heating medium冷〔热〕媒流速velocity of cooling or heating medium干工况dry condition；sensible cooling condition 湿工况wet condition；dehumidifying condition接触系数contact factor旁通系数bypass factor换热效率系数coefficient of heat transmission effectiveness盘管风阻力air pressure drop of coil；air resistance of coil盘管水阻力pressure drop of cooling or heating medium外表冷却surface cooling蒸发冷却evaporating cooling冷却元件cooling element涡流管制冷英语涡流制冷效应vortex refrigerating effect兰克-赫尔胥效应Ranque-Hilsch effect涡流管制冷vortex tube refrigeration涡流管vortex tube兰克管Ranque tube膨胀喷嘴expansion injector涡流室vortex device别离孔板separation orifice调节阀control valve膨胀压力比expansion pressure ratio冷气流分量cold gas fraction热气流分量hot gas fraction冷却效应cooling effect加热效应heating effect冷却效率cooling efficiency磁制冷英语磁热效应magnetocaloric effect磁制冷magnetic refrigeration磁制冷机magnetic refrigerating machine磁冰箱magnetic refrigerator压缩机制冷系统及机组制冷系统refrigeration system制冷机refrigerating machine机械压缩制冷系统mechanical compression refrigeration system蒸气压缩制冷系统vapour compression refrigeration system压缩式系统compression system压缩机compressor制冷压缩机refrigerating compressor,refrigerant compressor吸气端suction end排气端discharge end低压侧low pressure side高压侧high pressure side蒸发压力evaporating pressure 吸气压力suction pressure,back pressure排气压力discharge pressure蒸发温度evaporating temperature冷凝压力condensing pressure冷凝温度condensing temperature吸气温度suction temperature回气温度back temperature排气温度discharge temperature压缩比compression ratio双效压缩dual compression单级压缩single-stage compression双级压缩compound compression多级压缩multistage compression压缩级compression stage低压级low pressure stage高压级high pressure stage中间压力intermediate pressure中间冷却intercooling多级膨胀multistage expansion湿压缩wet compression干压缩dry compression制冷系统refrigerating system机械制冷系统mechanical refrigerating system氟利昂制冷系统freon refrigerating system氨制冷系统ammonia refrigerating system压缩式制冷系统compression refrigerating system 单级压缩制冷系统single-stage compression refrigeration system双级压缩制冷系统two-stage compression refrigeration system多级制冷系统multistage refrigerating system复叠式制冷系统cascade refrigerating system混合制冷剂复叠系统mixed refrigerant cascade集中制冷系统central refrigerating plant直接制冷系统direct refrigeration system直接膨胀供液制冷系统refrigeration system with supply liqiud direct expansion重力供液制冷系统refrigeration system with supply liquid refrigerant for the evaporator by gravity液泵供液制冷系统refrigeration system with supply liquid refrigerant for evaporator by liquid pump间接制冷系统indirect refrigeration system融霜系统defrosting system热气融霜系统defrosting system by superheated vapour电热融霜系统eletrothermal defrosting system制冷系统故障breakdown of the refrigeratingsystem冰堵freeze-up冰塞ice plug脏堵filth blockage油堵greasy blockage液击〔冲缸、敲缸〕slugging湿行程wet stroke镀铜现象appearance of copper-plating烧毁burn-out倒霜frost back制冷机组refrigerating unit压缩机组compressor unit开启式压缩机组open type compresssor unit开启式压缩机open type compressor半封闭式压缩机组semihermetic compressor unit 半封闭式压缩机semihermetic compressor全封闭式压缩机组hermetically sealed compressor unit全封闭式压缩机hermetically sealed compressor压缩冷凝机组condensing unit全封闭式压缩冷凝机组hermetically sealed condensing unit半封闭式压缩冷凝机组semihermetically sealed condensing unit开启式压缩冷凝机组open type compressor condensing unit工业用压缩冷凝机组industrial condensing unit商业用压缩冷凝机组commercial condensing unit 整马力压缩冷凝机组integral horsepower condensing unit分马力压缩冷凝机组fractional horsepower condensing unit跨式制冷机组straddle refrigerating unit容积式压缩机及零部件英语容积式压缩机positive displacement compressor往复式压缩机〔活塞式压缩机〕reciprocating compressor回转式压缩机rotary compressor滑片式压缩机sliding vane compressor单滑片回转式压缩机single vane rotary compressor滚动转子式压缩机rolling rotor compressor三角转子式压缩机triangle rotor compressor多滑片回转式压缩机multi-vane rotary compressor 滑片blade旋转活塞式压缩机rolling piston compressor 涡旋式压缩机scroll compressor涡旋盘scroll固定涡旋盘stationary scroll,fixed scroll驱动涡旋盘driven scroll,orbiting scroll斜盘式压缩机〔摇盘式压缩机〕swash plate compressor斜盘swash plate摇盘wobble plate螺杆式压缩机screw compressor单螺杆压缩机single screw compressor阴转子female rotor阳转子male rotor主转子main rotor闸转子gate rotor无油压缩机oil free compressor膜式压缩机diaphragm compressor活塞式压缩机reciprocating compressor单作用压缩机single acting compressor双作用压缩机double acting compressor双效压缩机dual effect compressor双缸压缩机twin cylinder compressor闭式曲轴箱压缩机closed crankcase compressor开式曲轴箱压缩机open crankcase compressor顺流式压缩机uniflow compressor逆流式压缩机return flow compressor干活塞式压缩机dry piston compressor双级压缩机compund compressor多级压缩机multistage compressor差动活塞式压缩机stepped piston compound compressor,differential piston compressor串轴式压缩机tandem compressor,dual compressor截止阀line valve,stop valve排气截止阀discharge line valve吸气截止阀suction line valve局部负荷旁通口partial duty port能量调节器energy regulator容量控制滑阀capacity control slide valve容量控制器capacity control消声器muffler联轴节coupling曲轴箱crankcase曲轴箱加热器crankcase heater轴封crankcase seal,shaft seal填料盒stuffing box轴封填料shaft packing机械密封mechanical seal波纹管密封bellows seal转动密封rotary seal迷宫密封labyrinth seal轴承bearing滑动轴承sleeve bearing偏心环eccentric strap滚珠轴承ball bearing滚柱轴承roller bearing滚针轴承needle bearing止推轴承thrust bearing外轴承pedestal bearing臼形轴承footstep bearing轴承箱bearing housing止推盘thrust collar偏心销eccentric pin曲轴平衡块crankshaft counterweight,crankshaft balance weight曲柄轴crankaxle偏心轴eccentric type crankshaft曲拐轴crankthrow type crankshaft连杆connecting rod连杆大头crank pin end连杆小头piston pin end曲轴crankshaft主轴颈main journal曲柄crank arm,crank shaft曲柄销crank pin曲拐crank throw曲拐机构crank-toggle阀盘valve disc阀杆valve stem阀座valve seat阀板valve plate阀盖valve cage阀罩valve cover阀升程限制器valve lift guard阀升程valve lift阀孔valve port吸气口suction inlet压缩机气阀compressor valve吸气阀suction valve排气阀delivery valve圆盘阀disc valve环片阀ring plate valve簧片阀reed valve舌状阀cantilever valve条状阀beam valve 提升阀poppet valve菌状阀mushroom valve杯状阀tulip valve缸径cylinder bore余隙容积clearance volume附加余隙〔补充余隙〕clearance pocket活塞排量swept volume,piston displacement理论排量theoretical displacement实际排量actual displacement实际输气量actual displacement,actual output of gas气缸工作容积working volume of the cylinder活塞行程容积piston displacement气缸cylinder气缸体cylinder block气缸壁cylinder wall水冷套water cooled jacket气缸盖〔气缸头〕cylinder head平安盖〔假盖〕safety head假盖false head活塞环piston ring气环sealing ring刮油环scraper ring油环scrape ring活塞销piston pin活塞piston活塞行程piston stroke吸气行程suction stroke膨胀行程expansion stroke压缩行程compression stroke排气行程discharge stroke升压压缩机booster compressor立式压缩机vertical compressor卧式压缩机horizontal compressor角度式压缩机angular type compressor对称平衡型压缩机symmetrically balanced type compress吸收式制冷机英语吸收式制冷机absorption refrigerating machine吸收式制冷系统absorption refrigerating system间歇式吸收系统intermittent absoprtion system连续循环吸收式系统continuous cycle absorption system固体吸收式制冷solid absorption refrigeration氨-水吸收式制冷机ammonia/water absorption refrigerating machine单级氨-水吸收式制冷机single stage ammonia/water absorption refrigerating machine 多级氨-水吸收式制冷机multistage ammonia/water absorption refrigerating machine 双级氨-水吸收式制冷机ammonia/water absorption refrigerating machine with two stage absorption process双级发生和双级吸收式氨-水制冷机ammonia/water absorption refrigerating machine with two stage generation and absoprtion process 分解decomposition水解hydrolysis扩散diffusion能量增强剂energy booster缓蚀剂anticorrsive发生缺乏incomplete boiling吸收缺乏incomplete absorption喷淋密度sprinkle density溴化锂lithium bromide溴化锂水溶液aqueous solution of lithium bromide 氨水溶液aqueous solution of ammonia吸收剂absorbent,absorbing agent吸附剂adsorbent溶液solution浓度concentration溶解度solubility溶剂solvent溶质solute浓溶液rich solution,concentrated solution稀溶液weak solution,diluted solution溶液分压partial pressure of liquor吸收absorption吸附adsorption吸收式制冷absorption refrigeration吸附式制冷adsorption refrigeration工质对working substance热力系数heat ratio放气范围deflation ratio焓-浓度图enthalpy concentration chart溴化锂吸收式制冷机lithiumbromide absorption refrigerating machine单效型溴化锂吸收式制冷机single-effect lithiumbromide absorption refrigerating machine两效型溴化锂吸收式制冷机double-effect lithiumbromide absorption refrigerating machine单筒型溴化锂吸收式制冷机one-shell lithiumbromide absorption refrigerating machine 双筒型溴化锂吸收式制冷机two-shell lithiumbromide absorption refrigerating machine三筒型溴化锂吸收式制冷机three-shell lithiumbromide absorption refrigerating machine两级溴化锂吸收式制冷机two-stage lithiumbromide absorption refrigerating machine直燃式溴化锂吸收式制冷机direct-fired lithiumbormide absorption refrigerating machine 溴化锂吸收式冷温水机组lithiumbromide absorption water heater chiller无泵型溴化锂吸收式制冷机lithiumbromide absorption refrigerating machine with bubble pump 蒸汽型吸收式制冷机steam operated absorption refrigerating machine热水型吸收式制冷机hot water operated absorption refrigerating machine发生器generator沉浸式发生器submerged generator喷淋式发生器spray-type generator立式降膜式发生器vertical falling film generator直燃式发生器direct-fired generator高压发生器high pressure generator低压发生器low pressure generator吸收器absorber喷淋式吸收器spray absorber降膜式吸收器falling film absorber立式降膜式吸收器vertical falling film absorber卧式降膜式吸收器horizontal falling film absorber 喷淋装置spray system溶液换热器solution heat exchanger溶晶管anti-crystallinic pipe抽气装置purging system精馏器rectifier屏蔽泵shield pump发生器泵generator pump吸收器泵absorber pump蒸发器泵evaporator pump溶液泵solution pump氨水泵aqua-ammonia pump混合阀mixing valve太阳能制冷与供热英语太阳能solar energy太阳常数solar constant太阳能系统solar energy system被动式太阳能系统passive solar energy system主动式太阳能系统active solar energy system混合式太阳能系统hybrid solar energy system太阳能制冷solar cooling太阳能热机驱动制冷solarpowered cooling太阳能吸收式制冷机solar absorption refrigerating machine光-热转换制冷photothermal refrigeration光-电转换制冷photoelectrical refrigeration太阳能蒸汽喷射制冷机solar steam jet refrigerating machine连续式太阳能吸收式制冷机continual solar absorption refrigerating machine间歇式太阳能吸收式制冷机intermittent solar absorption refrigerating machine敞开式太阳能吸收式制冷机open solar absorption refrigerating machine太阳能空调装置solar air-conditioning system太阳能制冷系统solar energy cooling system,solar cooling system太阳能集热器solar collector选择式吸收外表selective absorber surface电淀积electrodeposition平板型太阳能集热器flat plate solar collector真空管太阳能集热器tubular solar collector,vacuum tube collector聚光型太阳能机热器focus solar collector集热量heat-collecting capacity集热温度heat-collecting temperature集热效率heat-collecting efficiency蓄热介质heat storge medium岩石蓄热容器rock storge container辅助热源supplementary heat source太阳能贮存系统solar energy storge system太阳能供热系统solar heating system,solar space heating installation自然循环闭式供水系统natural convection closed water system强制循环闭式供水系统forced convection in a closed water system热风供热系统warm air heating system家用太阳能热水系统solar domestic water heating system热管与余热制冷英语热管heat pipe深冷热管cryogenic heat pipe低温热管low temperature heat pipe中温热管moderate temperature heat pipe 高温热管liquid metal heat pipe管芯wick相容性compatibility传热极限heat transport limitation重力热管gravity assisted heat pipe热管换热器heat pipe exchanger深冷热管手术器heat pipe surgery cryoprobe余热exhaust heat低温余热low temperature exhaust heat余热制冷utilizing waste heat for refrigeration氟利昂透平freon turbine氟利昂透平离心式制冷机centrifugal refrigerating machine driven by freon turbine动力-制冷循环power/refrigeration cycle透平压缩机及零部件英语涡流swirl叶片颤振blade flutter叶片通过频率blade passing frequency喘振surging脱流stall叶轮反响度(反作用度) impeller reaction叶轮impeller半开式叶轮unshrouded impeller闭式叶轮shrouded impeller叶片blade,vane导流叶片组件pre-rotary vane assembly扩压器diffuser蜗壳scroll滑动slip透平压缩机turbocompressor离心式压缩机centrifugal compressor轴流式压缩机axial flow compressor刚性轴离心式压缩机stiff-shaft centrifugal compressor挠性轴离心式压缩机flexibleshaft centrifugal compressor亚音速压缩机subsonic compressor超音速压缩机supersonic compressor冷却塔英语自然通风式冷却塔atmpspheric cooling tower，natural draught cooling tower机械通风式冷水塔mechanical draught cooling tower吸风式冷水塔induced draught cooling tower送风式冷水塔forced draught cooling tower水膜式冷水塔film cooling tower水滴式冷水塔drop cooling tower喷雾式冷水塔spray cooling tower拉西环Rasching rings温度接近值approach水垢scale水垢抑制剂scale inhibitor藻类algae防藻剂algaecide淀渣slime升压阀back-up valve冷水塔water cooling tower，cooling tower凉水塔water cooling tower，cooling tower冷却塔water cooling tower，cooling tower喷水池spray pond干式冷水塔dry cooling tower湿-干式冷水塔wet-dry cooling tower冷水塔填料packing of cooling tower，fill of cooling tower膜式填料film packing帘栅形填料grid packing，grid fill片式填料plate packing，plate fill松散填料random packing，random fill飞溅式填料splash packing空气压缩制冷系统英语空气循环制冷air-cycle refrigeration空气循环制冷机air-cycle refrigerating machine涡轮冷却器turbine cooler温降temperature drops开式循环open cycle闭式循环closed cycle除水water elimination补气air supply回热式空气制冷循环regenerative air cycle飞机座舱空调系统aircraft air-conditioning system 增压式飞机空调系统"Bootstrap" system冲压空气ram air制冷系统自动调节流量调节flow regulation制冷剂控制器refrigerant control膨胀阀expansion valve节流阀throttle valve热力膨胀阀thermostatic expansion valve热电膨胀阀thermal electric expansion valve内平衡热力膨胀阀internal equalizer thermostaice expansion valve外平衡热力膨胀阀external equalizer thermostaice expansion valve外平衡管external equalizer pipe内平衡管internal equalizer pipe蒸发器阻力损失pressure drop of evaporator同工质充注same material charge交*充注cross charge吸附充注absorptive charge气体充注gas charge膨胀阀过热度superheat degree of expansion valve 过热温度调节superheat temperature regulation膨胀阀容量expansion valve capacity手动膨胀阀hand expansion valve自动膨胀阀automatic expansion valve浮球调节阀float regulation valve浮球阀float valve低压浮球阀low pressure float valve高压浮球阀high pressure float valve流量调节flow regualation制冷剂控制器refrigerant control膨胀阀expansion valve节流阀throttle valve热力膨胀阀thermostatic expansion valve热电膨胀阀thermal electric expansion valve内平衡热力膨胀阀internal equalizer thermostaice expansion valve外平衡热力膨胀阀external equalizer thermostaice expansion valve外平衡管external equalizer pipe内平衡管internal equalizer pipe蒸发器阻力损失pressure drop of evaporator同工质充注same material charge交*充注cross charge吸附充注absorptive charge气体充注gas charge膨胀阀过热度superheat degree of expansion valve 过热温度调节superheat temperature regulation膨胀阀容量expansion valve capacity手动膨胀阀hand expansion valve自动膨胀阀automatic expansion valve浮球调节阀float regulation valve浮球阀float valve低压浮球阀low pressure float valve高压浮球阀high pressure float valve恒压膨胀阀constant pressure expansion valve能量调节capacity regulator单机能量调节capacity regulation of single unit卸载能量调节capacity regulation of load drainage 程序指令式能量调节系统capacity regulation system of program order电磁阀solenoid valve电磁滑阀magnetic slide valve三通电磁阀three way magnetic valve蒸汽喷射式制冷系统英语蒸汽喷射制冷steam jet refrigeration蒸汽喷射制冷机steam-jet refrigerating machine蒸发式蒸汽喷射制冷机evaporation-type steam jet refrigeration machine混合式蒸汽喷射制冷机contact-type steam jet refrigerating machine蒸汽喷射制冷系统steam jet refrigerating system 蒸汽喷射器steam ejector主喷射器main ejector辅助喷射器auxiliary ejector喷射系数jet coefficient主冷凝器main condenser辅助冷凝器auxiliary condenser多效蒸发multieffective evaporation高位安装high-level installation低位安装low-level installation上下位安装high-low-level installation臭氧层保护英语臭氧ozone臭氧层ozonesphere,ozone layer臭氧层破坏ozonesphere depletion,ozonesphere disturbance消耗臭氧层物质ozone depleting substances〔ODS〕禁用制冷剂forbidden refrigerant过渡制冷剂transition refrigerant替代制冷剂substitute refrigerant自然制冷剂natural refrigerant氟利昂家族freon group全氟代烃fluorocarbon 〔FC〕氯氟烃chloroflurocarbon〔CFC〕氢氟烃hydrofluorocarbon〔HCF〕含氢氯氟烃hydrochloroflurocarbon〔HCFC〕含氢氯化烃hydrochlorocarbon〔HCC〕全氯化烃polychlorocarbon〔PCC〕哈龙Halon共沸混合物azeotropic mixture碳氢化合物hydrocarbon compound,hydrocarbon 〔HC〕臭氧消耗潜能值ozone depletion potential〔ODP〕温室效应greenhouse effect全球变暖global warming京都议定书kyoto protocol全球变暖潜能值global warming potential〔GWP〕变暖影响总当量total equivalent warming impact 〔TEWI〕寿命期气候性能life cycle climate performance 〔LCCP〕蕴含能量embodied energy不易收集的排放fugitive emissions热电制冷英语热电制冷thermoelectric refrigeration温差电制冷thermoelectric refrigeration半导体制冷semiconductor refrigeration热电效应thermoelectric effect塞贝克效应Seebeck effect珀尔帖效应Peltier effect热电制冷效应thermoelectric refrigeration effect汤姆逊效应Thomson effect焦耳效应Joule effect傅里叶效应Fourier effect温差电动势thermoelectric power塞贝克系数Seebeck coefficient优值系数figure of merit热电堆thermoelectric pile温差电堆thermoelectric pile最正确电流optimum current经济电流economic current热电半导体thermoelectric semiconductors热电材料thermoelectric material热电制冷材料thermoelectric cooling materialn型半导体n-type semiconductorsp型半导体p-type semiconductors半导体制冷器thermoelectric-refrigerating unit热电制冷器thermoelectric refrigerating unit热电空调器thermoelectric air conditioner半导体空调器thermoelectric air conditioner半导体恒温器thermoelectric thermostat半导体冷饮水器thermoelectric drinking water cooler半导体热泵thermoelectric heat pump半导体降温机thermoelectric dehumidifier低温半导体制冷器low temperature thermoelectric unit焊接式半导体制冷器soldered thermoelectric refrigerating unit粘接式半导体制冷器sticky thermoelectric refrigerating unit嵌装式半导体制冷器inlaid thermoelectric refrigerating unit复叠式半导体制冷器cascade thermoelectric refrigerating unit医用半导体制冷器medicine thermoelectric refrigerating unit盐水冷却系统开式盐水冷却系统open brine system闭式盐水系统closed brine system盐水箱brine bank盐水混合箱brine mixing tank盐水溢流箱brine return tank盐水回流箱brine return tank盐水膨胀箱brine balance tank盐水加热器brine heater盐水冷却器brine cooler盐水筒brine drum盐水集管brine header盐水泵brine pump盐水喷雾brine spray盐水喷淋brine sparge制冷暖通行业品牌中英文对照AEROFLEX “亚罗弗〞保温ALCO “艾科〞自控Alerton 雅利顿Alfa laval阿法拉伐ARMSTRONG “阿姆斯壮〞保温AUX 奥克斯BELIMO 瑞士“搏力谋〞BERONOR西班牙“北诺尔〞电加热器BILTUR 意大利“百得〞BOSIC “柏诚〞自控BROAD 远大Burnham美国“博恩汉〞锅炉CALPEDA意大利“科沛达〞水泵CARLY 法国“嘉利〞制冷配件Carrier 开利Chigo 志高Cipriani 意大利斯普莱力CLIMAVENETA意大利“克莱门特〞Copeland“谷轮〞压缩机CYRUS意大利〞赛诺思〞自控DAIKIN 大金Danfoss丹佛斯Dorin “多菱〞压缩机DUNHAM-BUSH 顿汉布什DuPont美国“杜邦〞制冷剂Dwyer 美国德威尔EBM “依必安〞风机ELIWELL意大利“伊力威〞自控EVAPCO美国“益美高〞冷却设备EVERY CONTROL意大利“美控〞Erie 怡日FRASCOLD 意大利“富士豪〞压缩机FRICO瑞典“弗瑞克〞空气幕FUJI “富士〞变频器FULTON 美国“富尔顿〞锅炉GENUIN “正野〞风机GREE 格力GREENCOOL格林柯尔GRUNDFOS “格兰富〞水泵Haier 海尔Hisense 海信HITACHI 日立Honeywell 霍尼韦尔Johnson 江森Kelon 科龙KRUGER瑞士“科禄格〞风机KU BA德国“库宝〞冷风机Liang Chi 良机LIEBERT 力博特MARLEY “马利〞冷却塔Maneurop法国“美优乐〞压缩机McQuary 麦克维尔Midea 美的MITSUBISHI三菱Munters 瑞典“蒙特〞除湿机Oventrop德国“欧文托普〞阀门Panasonic 松下RANCO “宏高〞自控REFCOMP意大利“莱富康〞压缩机RIDGID 美国“里奇〞工具RUUD美国“路德〞空调RYODEN “菱电〞冷却塔SanKen “三垦〞变频器Samsung 三星SANYO 三洋SASWELL英国森威尔Schneider 施耐德SenseAir 瑞典“森尔〞传感器SIEMENS 西门子SINKO "新晃“空调SINRO “新菱〞冷却塔STAND “思探得〞加湿器SWEP 舒瑞普TECKA “台佳〞空调Tecumseh“泰康〞压缩机TRANE 特灵TROX德国“妥思〞VASALA芬兰“维萨拉〞传感器WILO德国“威乐〞水泵WITTLER 德国〞威特〞阀门YORK 约克ZENNER德国“真兰〞计量制冷能力及计算术语英语运行工况operating conditions标准性能standard rating标准工况standard condition空调工况air conditioning condition内部条件internal conditions外部条件external conditions蓄热accumulation of heat蓄冷accumulation of cold制冰能力ice-making capacity热泵用压缩机的供热系数heat-pump compressor coefficient of performance容积效率volumetric efficiency容积输气量vulumetric displacement实际输气量actual displacement理论输气量theoretical displacement冷凝热量condenser heat过冷热量heat of subcooling过热热量superheat运转工况下的制冷量rating under working conditions标准制冷量standard rating名义工况normal conditions试验工况test conditions轴功率brake power效率efficiency指示效率indicated efficiency机械效率mechanical efficiency总效率overall efficiency制冷系数coefficient of performance 〔COP〕制冷压缩机的制冷系数refrigerating compressor coefficient of performance热力完善度thermodynamical perfectness能效比energy efficiency ratio 〔EER〕热泵供热系数heat-pump coefficient of performance空调有效显热制冷量useful sensible heat capacity of air conditioner空调有效潜热〔减湿〕制冷量useful latent heat (dehumidifyying) capacity of air conditioner空调器有效总制冷量useful total capacity of air conditioner制冷剂循环量circulating mass of refrigerant制冷剂循环容积circulating volume of refrigerant 单位压缩功compress work per mass示功图indicator diagram指示功indicated work摩擦功frictional work功率power摩擦功率frictional power指示功率indicated power理论功率idea power制冷量refrigerating capacity总制冷量gross refrigerating capacity净制冷量net refrigerating capacity单位制冷量refrigerating capacity per weighing单位容积制冷量refrigerating capacity per unit of swept volume制冷系统制冷量system refrigerating capacity单位轴功率制冷量refrigerating effect per shaft power压缩冷凝机组制冷量compressor condensing unit refrigerating capacity制冷压缩机制冷量refrigerant compressor capacity 蒸发器净制冷量net cooler refrigerating capacity制冷装置制冷装置refrigerating installation，refrigerating plant工业制冷装置industrial refrigerating plant商业制冷装置commercial refrigerating plant中心站房central station成套机组self-contained system标准安装code installation制冷回路refrigerating circuit热平衡heat balance货物负荷product load操作负荷service load设计负荷design load负荷系数load factor制冷装置试验与操作试运转commissioning吹污flush气密性试验gas-tight test，air-right test密闭容器closed container漏气air infiltration放气air vent检漏leak hunting，leak detection检漏仪leak detector卤素灯halide torch电子检漏仪electronic leak detector真空试验vacuum test试验压力test pressure工作压力operating pressure，working pressure最高工作压力highest operating pressure气密试验压力gas-tight test pressure设计压力design pressure平衡压力balance pressure充气aerate，gas charging制冷剂充注refrigerant charging首次充注initial charge保护充注holding charge，service charge制冷剂缺乏lack of refrigerant，under-charge，gas shortage缺液starveling充灌台charging board充灌量charge充注过多overcharge供液过多overfeeding制冷剂抽空pump down of refrigerant降温试验pull down test制冷[功能]试验refrigeration test卸载起动no-load starting，unloaded start卸载机构unloader闪发flash vaporization，instantaneous vaporization 闪发气体flash gas不凝性气体non condensable gas气体排除gas purging，degassing，gasoff阀针跳动hammering，needle hammer阀振荡hunting of a valve阀片跳动valve flutter，valve bounce短期循环short-cycling异常温升overheating 泄漏leak气蚀cavitation制冷剂瓶refrigerant cylinder，gas bottle检修用瓶service cylinder，gas bottle紧急泄放阀emergency-relief valve检修阀service valve平安阀pressure relief valve抽空阀pump out valve加油阀oil charge valve放油阀oil drain valve放空阀purge valve充灌阀charging valve喷液阀liquid injection valve润滑油润滑油lubricant oil冷冻机油refrigeration oil冷冻油refrigerant oil凝点condensation point闪点flash point浊点cloud point絮凝点flock point流动点pour point起泡foaming皂化saponify油泥sludge结碳carbonization制冷剂制冷剂〔制冷工质〕refrigerant高温制冷剂high temperature refrigerant低压制冷剂low pressure refrigerant中温制冷剂medium temperature refrigerant 中压制冷剂medium pressure refrigerant低温制冷剂low temperature refrigerant高压制冷剂high pressure refrigerant氟利昂freon卤化碳制冷剂halocarbo refrigerant氟利昂11 freon 11氟利昂12 freon 12氟利昂13 freon 13氟利昂14 freon 14氟利昂22 freon 22氟利昂113 freon 113氟利昂125 freon 125氟利昂134a freon 134a氟利昂152a freon 152a碳氢化合物制冷剂hydrocarbon refrigerant甲烷methane乙烷ethane丙烷propane丁烷butane异丁烷isobutane乙烯ethylene无机化合物制冷剂inorganic compund refrigerant 氨ammonia二氧化碳carbon dioxide二氧化硫sulphur dioxide干冰dry ice共沸制冷剂azeotropic mixture refrigerant氟里昂500 freon 500氟里昂501 freon 501氟里昂502 freon 502氟里昂503 freon 503氟里昂504 freon 504近共沸溶液制冷剂near azeotropic mixture refrigerant非共沸溶液制冷剂nonazeotropic mixture refrigerant蒸发器壳盘管式蒸发器shell-and-coil evaporator壳管式蒸发器shell-and-tube evaporator喷淋式蒸发器spray-type evaporator立管式蒸发器vertical-type evaporator平行管蒸发器receway coil螺旋管式蒸发器spiral tube evaporator“V〞型管蒸发器herringbone type evaporator沉浸式盘管蒸发器submerged evaporator板式蒸发器plate-type evaporator螺旋板式蒸发器spiral sheet evaporator平板式蒸发器plate-type evaporator，tube-in-sheet evaporator管板式蒸发器tube-on-sheet evaporator凹凸板式蒸发器embossed-plate evaporator吹胀式蒸发器roll-bond evaporator压焊板式蒸发器roll-bond evaporator制冰块器的蒸发器ice cube maker evaporator结冰式蒸发器ice-bank evaporator蓄冰式蒸发器ice-bank evaporator结霜蒸发器frosting evaporator除霜蒸发器defrosting evaporator无霜蒸发器nonfrosting evaporator强制通风蒸发器forced circulation evaporator 冷液式蒸发器liquid cooling evaporator封套式蒸发器wrap-round evaporator蒸发器evaporator直接冷却式蒸发器direct evaporator直接式蒸发器direct evaporator间接冷却式蒸发器indirect cooled evaporator间接式蒸发器indirect evaporator干式蒸发器dry expansion evaporator满液式蒸发器flooded evaporator再循环式蒸发器recirculation-type evaporator强制循环式蒸发器pump-feed evaporator冷凝器英语冷凝器condenser冷凝液condensate空冷式冷凝器air-cooled condenser风冷式冷凝器air-cooled condenser自然对流空冷式冷凝器natural convecton air-cooled condenser强制通风式冷凝器forced draught condenser冷凝风机condensate fan线绕式冷凝器wire and tube condenser水冷式冷凝器water-cooled condenser沉浸式盘管冷凝器submerged coil condenser套管式冷凝器double pipe condenser壳管式冷凝器shell and tube condenser组合式冷凝器multishell condenser卧式壳管式冷凝器closed shell and tube condenser 卧式冷凝器closed condenser立式壳管式冷凝器open shell and tube condenser 立式冷凝器open condenser，vertical condenser 壳盘管式冷凝器shell and coil condenser分隔式冷凝器split condenser淋激式冷凝器atmospheric condenser溢流式冷凝器bleeder-type condenser蒸发式冷凝器evaporative condenser板式冷凝器plate-type condenser空冷板式冷凝器air-cooled plate-type condenser 水冷板式冷凝器water-cooled plate-type condenser焊接板式冷凝器welded sheet condenser螺旋板式冷凝器spiral sheet condenser冷凝-贮液器condenser-receiver混合式冷凝器barometric condenser液化器liquefier冷凝水泵condensate pump冷凝器梳condensate comb。
异常及时highlight的机制英文表达
异常及时highlight的机制英文表达In the realm of data analysis, monitoring, and software development, the concept of real-time exception highlighting, or anomaly detection with timely highlighting, has emerged as a crucial mechanism for enhancing efficiency, accuracy, and response times. This mechanism is designed to identify and immediately flag any deviations from the norm, whether it be in a stream of data, the performance of a system, or the behavior of a software application.The importance of this mechanism lies in its ability to process large amounts of information in real time, pinpointing exceptions that might otherwise go unnoticed.By immediately highlighting these exceptions, it enables analysts, developers, and operators to act quickly, mitigating potential risks or addressing issues promptly.The benefits of real-time exception highlighting are numerous. Firstly, it enhances the decision-making process by providing timely and accurate insights into the state ofsystems or processes. This is particularly useful in scenarios where rapid responses to changing conditions are crucial, such as in financial trading, where deviations in market patterns can indicate buying or selling opportunities.Secondly, it improves the efficiency of data analysis. By automatically flagging exceptions, analysts can focus their efforts on areas that require attention, rather than spending time manually sifting through vast datasets. This not only saves time but also ensures that important exceptions are not overlooked.Moreover, real-time exception highlighting can help in predictive maintenance and proactive problem-solving. By identifying patterns or trends in exceptions, it can predict potential failures or issues before they occur, enabling proactive measures to be taken to prevent them. In addition, this mechanism is also beneficial in security applications. By highlighting suspiciousactivities or deviations from normal patterns, it can help security teams to identify and respond to threats more quickly and effectively.However, the implementation of real-time exception highlighting is not without its challenges. Accurate and timely detection of exceptions requires sophisticated algorithms and processing capabilities. Additionally, defining what constitutes an "exception" can be subjective and requires careful consideration based on the specific context and requirements of the application.Despite these challenges, the potential benefits ofreal-time exception highlighting far outweigh the costs. As the amount of data and the complexity of systems continue to grow, the need for efficient and effective mechanisms to monitor and analyze them becomes increasingly important. Real-time exception highlighting is poised to play apivotal role in meeting this need, enabling faster, more informed decisions and improved overall system performance.实时异常高亮机制的关键作用在数据分析、监控和软件开发领域，实时异常高亮机制或异常检测与及时高亮的概念已成为提高效率、准确性和响应时间的关键机制。
超音波传感器873P型号参考手册说明书
Installation InstructionsOriginal InstructionsUltrasonic SensorsBulletin Number 873PSpecificationsAttribute 873P-D18x -400-D y (1)(1)Replace the x with P1, P2, AI, AV, AIP2, AVP2.If x is P1, replace the y with D4 (Micro QD, 4-pin). Replace the y with D5 (Micro QD, 5-pin) for all other models.873P-D18x -900-D y (1)873P-D18x -2200-D y (1)873P-D30x -2500-D y (1)873P-D30x -3500-D y (1)873P-D30x -6000-D y (1)Certification c-UL-us Listed and CE Marked for all applicable directivesRated sensing distance [mm (in.)]50…400 (1.97…15.75) (2)(2)Metallic target 200 x 200 mm (7.87 x 7.87 in.)100…900 (3.94…35.43) (2)200…2200 (7.87…86.61) (2)200…2500 (7.87…98.42) (2)250…3500 (9.84…137.79) (2)350…6000 (13.78…236.22) (3)(3)Metallic target 400 x 400 mm (15.75 x 15.75 in.)Teachable sensing range [mm (in.)]50…400 (1.97…15.75)100…900 (3.94…35.43)200…2200 (7.87…86.61)200…2500 (7.87…98.42)250…3500 (9.84…137.79)350…6000 (13.78…236.22)Blind zone [mm (in.)]0…50 (0…1.97)0…100 (0…3.94)0…200 (0…7.87)0…200 (0…7.87)0…250 (0…9.84)0…350 (0…13.78)Beam angle 15°±2°14°±2°14°±2°10°±2°12°±2°15°±2°Sensitivity adjustment Push buttonLinearity 1%<3%Resolution (SIO)[mm (in.)] 1 (0.04)2 (0.08)3 (0.12)2 (0.08)4 (0.16)6 (0.24)Resolution (IO-link) 1 mmAccuracy 0.50%1%Hysteresis <1%<3%Ripple5%Operating voltage 10…30V DCCurrent consumption <50 mA <30 mAProtection type •Short circuit •Reverse polarity •Transient noise •OverloadOutput current 100 mA Leakage current ≤10 µATransducer frequency 300 kHz300 kHz200 kHz150 kHz112 kHz75 kHzOutput voltage drop, max2.2VOutput type•P1 Model: PNP or IO-Link •P2 Model: Dual PNP or IO-Link •AI Model: Analog Current or IO-Link •AV Model: Analog Voltage or IO-Link•AIP2 Model: Dual PNP and Analog Current or IO-Link •AVP2 Model: Dual PNP and Analog Voltage or IO-LinkSwitching frequency 10 Hz3 Hz2 Hz1 HzTime delay before availability (Digital Output)600 msResponse time (Analog Output)400 ms 450 ms Time delay before availability (Analog Output)650 ms600 ms Temperature range -20…+70 °C (-4…+158 °F)Temperature compensation YesTemperature drift ±2%±5%Material•Housing: Plastic - PBT•Active head: Epoxy – glass resinIngress protection rating IP672Rockwell Automation Publication 873P-IN006A-EN-P - October 2020Ultrasonic Sensors Installation InstructionsDual-switching and/or Analog OutputIn this sensing mode, you teach the sensor two switching points: P1 is the first taught point and P2 is the second taught point. For dual discrete switching outputs, P1 defines the switching point of Pin-4 outputs and P2 defines the switching point of Pin-2 outputs. For analog output, P1 determines 4 mA or 0V position and P2 determines 20 mA or 10V position. Output logic, Normally Open (N.O.) or Normally Closed (N.C.), is defined based on teaching sequence of the near setpoint and far setpoint: teach the near setpoint first for a N.O. /rising ramp output; teach the far setpoint first for a N.C./falling ramp output. The analog output is scaled between the two taught points (P1 and P2).Setpoint 11.Place the target at the desired near/far setpoint.a.Teaching the near setpoint first yields an N.O./rising ramp output.b.Teaching the far setpoint first yields an N.C./falling ramp output. 2.With the target still in place, press and release the Teach button. The yellow and green status indicators flash simultaneously, which indicates that the first setpoint (P1) is set. The sensor is waiting for the second setpoint (P2).Setpoint 21.Place the target at the desired near/far setpoint.2.Press and release the Teach button while the green and yellow status indicators stop flashing. The sensor is ready to operate.Single-switching and/or Analog OutputIn this sensing mode, one switching point is taught within the defined sensing range of the sensor. The working range of the sensor becomes the minimum sensing distance (blind zone) to a user-taught setpoint. Depending on where the setpoint is taught, the output turns ON when the target passes between the minimum sensing distance and the taught setpoint. The analog output is scaled between minimum sensing distance and taught setpoint. When using the single-switching output mode, it is only possible to configure the sensor for Normally Open logic and rising ramp analog output.Setpoint1.Place the target at the desired setpoint.2.With the target still in place, press and release the Teach button. The yellow and green status indicators flash simultaneously, which indicates that the first setpoint (P1) is now set. The sensor is waiting for the second setpoint. Keep the target and sensor in the same position, and press and release the Teach button again to set the second setpoint (P2). The yellow status indicator turns off and the green status indicator stops flashing, which indicates that the sensor is ready for use. The minimum sensing distance is shown in Specifications on page 1.Status Indicators20 mA N.O.Pin 4(BK)Blind Zone4 mAmmP2P1BZ H Pin 2(WH)LH L20 mA N.C.Pin 4(BK)Blind Zone4 mAmmP1P2BZ H Pin 2(WH)LH L20 mA N.O.Pin 4(BK)Blind Zone4 mA mmP1=P2Minimum Sensing DistanceBZ H Pin 2(WH)LH LIMPORTANTWhen you configure the sensor for single-switching mode, it is important that the target is at the exact samedistance for both the first and second push of the Teach button. If the target or sensor has moved even slightly, the detected ranges are different for the two pushes of the Teach button, and the sensor is configured for dual-switching mode.The green and yellow status indicators flashasynchronously for about 2 seconds, which indicates that there is no target present within the sensing range of the sensor and, therefore, no setpoint to teach. When no setpoint to teach occurs, the 873P sensor ignores the teach attempt and restores its previous settings. By comparison, when an object is detected during teach, the yellow and green status indicators flash synchronously and continue flashing until the second push of the Teach button.Double PNP Output Status Indicator FunctionsIndicator Color FunctionA Yellow P1 Point in double digital outputB Yellow P2 Point in double digital output/Teach function CGreenECHO Indicator/Teach functionDual PNP Discrete Output and One Analog Output Status Indicators (1)(1)The analog output depends on the user-taught setpoints for the dual discrete sensor. Therefore, it does not have a separate status indicator.Operating Model Green Indicator (Alignment)Yellow Indicator A (Output)Yellow Indicator B (Teach)Standard Operation Target Present ON (2)(2)Green status indicator indicates that an echo is reflected back to the sensor by an object, not necessarily the target. Primary use is alignment.ON/OFF (3)(3)For single discrete sensors, status indicator A triggers ON/OFF depending on target position relative to the taught setpoints and if N.O. or N.C. logic is used.For dual discrete sensors, status indicators A and B trigger ON/OFF depending on the target position relative to the taught setpoints and on the logic used (N.O. or N.C.).ON/OFF (3)Target AbsentON/OFF (2)ON/OFF (3)ON/OFF(3)M18M301234(Yellow) Teach (Green)Echo/teach(Yellow)Output stateUltrasonic Sensors Installation InstructionsLockout Feature for Teach ButtonThe lockout feature locks the push button to help prevent unwanted teaching of the sensor.Lock Teach Button1.Press the Teach button for 8 seconds, until the yellow status indicators Aand B flash alternately with the green status indicator C.2.Release the Teach button.The push button is now locked.Unlock Teach Button1.Press the Teach button for 8 seconds, until the yellow status indicators Aand B flash alternately with the green status indicator C.2.Release the Teach button.It is once again possible to teach the sensor. Synchronization of Ultrasonic SensorsIn this mode, all sensors are connected to a same output on the PLC. A SYNC pulse simultaneously drives all sensors that are connected to the PLC output. When mounting the sensors, pay attention to a minimum distance between the sensors; this distance varies depending on the types of sensors used (see How it Works). The target must be positioned at the same distance from each synchronized sensor; the target position should overall be flat. When mounted correctly, the synchronized sensors perform like one sensor with an extended detection angle.How it WorksConnect Pin 2 (white) to all sensors to be synchronized.All sensors trigger simultaneously. Any eventual crosstalk signal related to a longer sensing distance is ignored. An external synchronization pulse controls the sensors.All minimum distances depend on target distance and material. “T” is the pulse time period that is applied on the SYNC wire, and “Width” refers to the pulse width.Beam Diagrams50…400 mm (1.97…15.75 in.) Sensing Range 100…900 mm (3.94…35.43 in.) Sensing Range 200…2200 mm (7.87…86.61 in.) Sensing RangeIMPORTANT Sensor response times increase proportionally to thenumber of synchronized sensors.•400 mm sensing range sensorsT ≥ 4 ms500 µs ≤ Width ≤ 1 msMinimum distance between sensors: 50…100 mm (1.97…3.94 in.).•2500 mm sensing range sensorsT ≥ 25 ms500 µs ≤ Width ≤ 5 msMinimum distance between sensors: 100mm (3.94 in.) for working distances up to 1.5 m (4.9 ft), and 50 mm (1.97 in.) for distances >1.5 m (4.9 ft).•900 mm sensing range sensorsT ≥ 7.5 ms500 µ ≤ Width ≤ 1 msMinimum distance between sensors: 30…50 mm (1.18…1.97 in.).•3500 mm sensing range sensorsT ≥ 35 ms500 µs ≤ Width ≤ 5 msMinimum distance between sensors: 100mm (3.94 in.) for working distances up to 1.5 m (4.9 ft), and 50 mm (1.97 in.) for distances >1.5 m (4.9 ft).•2200 mm sensing range sensorsT ≥ 17.5 ms500 µs ≤ Width ≤ 1 msMinimum distance between sensors: 30…40 mm (1.18…1.57 in.).•6000 mm sensing range sensorsT ≥ 60 ms500 µs ≤ Width ≤ 1 msMinimum distance between sensors:200mm (7.87in.) for working distances upto 1.5 m (4.9 ft), and 50 mm (1.97 in.) fordistances >1.5 m (4.9 ft).-150-100-5050100150Paralleldisplacement[mm]Distance [mm (in.)]0100(3.94)200(7.87)300(11.81)400(15.75)500(19.68)Paralleldisplacement[mm]Distance [mm (in.)](7.87)(31.50)(39.37)(15.75)(23.62)Paralleldisplacement[mm](19.68)(39.37)(59.05)(78.74)(98.42)Distance [mm (in.)]Rockwell Automation Publication 873P-IN006A-EN-P - October 202034Rockwell Automation Publication 873P-IN006A-EN-P - October 2020Ultrasonic Sensors Installation Instructions 200…2500 mm (7.87…98.43 in.) Sensing Range250…3500 mm (9.84…137.79 in.) Sensing Range350…6000 mm (13.78…236.22 in.) Sensing RangeWiring Diagrams-50050P a r a l l e l d i s p l a c e m e n t [m m ]Distance [mm (in.)](19.68)(39.37)(59.05)(78.74)(98.42)(118.11)Distance [mm (in.)](39.37)(78.74)(118.11)(157.48)P a r a l l e l d i s p l a c e m e n t [m m ]P a ra l l e l d i s p l a c e m e n t [m m ]Distance [mm (in.)](78.74)(157.48)(236.22)(314.96)Single PNP and Analog Voltage ModelsSingle PNP and Analog Current ModelsDual PNP ModelsDual PNP and Analog Current ModelsDual PNP and Analog Voltage ModelsSingle PNP ModelsIMPORTANTSolid-state devices can be susceptible to radio frequency (RF) interference depending on the power and thefrequency of the transmitting source. If RF transmitting equipment is to be used in the vicinity of the solid-state devices, thorough testing can be performed to verify that transmitter operation is restricted to a safe operating distance from the sensor equipment and its wiring.ATTENTION: If a hazardous condition can result from unintended operation of this device, access to the sensing area can be guarded.51432Hold/SyncLoadPush-Pull/IO-Link+-+-Analog 0...10 V51432Hold/SyncLoadPush-Pull/IO-Link+-+-Analog 4...20 mA51432Hold/SyncLoadPush-Pull/IO-Link+-+-51432Analog 4...20 mALoad Load+-Push-Pull/IO-Link+-+-51432Analog 0...10 VLoad Load+-Push-Pull/IO-Link+-+-1432Hold/SyncPush-Pull/IO-Link+-Rockwell Automation Publication 873P-IN006A-EN-P - October 20205Ultrasonic Sensors Installation InstructionsApproximate DimensionsDimensions shown in mm (in.).(1)38.8 mm (1.53 in.) diameter, maxAdditional ResourcesThese documents contain additional information concerning related products from Rockwell Automation.You can view or download publications at rok.auto/literature .ResourceDescriptionUltrasonic Sensors with IO-Link Interface User Manual, publication 873P-UM001Provides information to install, wire, and troubleshoot your 873P sensor.Industrial Automation Wiring and Grounding Guidelines, publication 1770-4.1Provides general guidelines for installing a Rockwell Automation industrial system.Product Certifications website, rok.auto/certifications .Provides declarations of conformity, certificates, and other certification details.8.3M1810M30 x 1.51010.5M30 (1)Publication 873P-IN006A-EN-P - October 2020Copyright © 2020 Rockwell Automation, Inc. All rights reserved. Printed in the U.S.A.Rockwell Otomasyon Ticaret A.Ş. Kar Plaza İş Merkezi E Blok Kat:6 34752 İçerenköy, İstanbul, Tel: +90 (216) 5698400 EEE Yönetmeliğine Uygundur10005775215 Ver 01Allen-Bradley, expanding human possibility, and Rockwell Automation are trademarks of Rockwell Automation, Inc.Trademarks not belonging to Rockwell Automation are property of their respective companies.Your comments help us serve your documentation needs better. If you have any suggestions on how to improve our content, complete the form at rok.auto/docfeedback .For technical support, visit rok.auto/support .Waste Electrical and Electronic Equipment (WEEE)Rockwell Automation maintains current product environmental compliance information on its website at rok.auto/pec .At the end of life, this equipment should be collected separately from any unsorted municipal waste.Rockwell Automation SupportUse these resources to access support information.Documentation FeedbackYour comments help us serve your documentation needs better. If you have any suggestions on how to improve our content, complete the form at rok.auto/docfeedback .Technical Support Center Find help with how-to videos, FAQs, chat, user forums, and product notification updates.rok.auto/supportKnowledgebaseAccess Knowledgebase articles.rok.auto/knowledgebase Local Technical Support Phone Numbers Locate the telephone number for your country.rok.auto/phonesupport Literature LibraryFind installation instructions, manuals, brochures, and technical data publications.rok.auto/literature Product Compatibility and Download Center (PCDC)Download firmware, associated files (such as AOP, EDS, and DTM), and access product release notes.rok.auto/pcdc。
Deep Brain Stimulation Can Preserve Working Status in Parkinson’s Disease
Research ArticleDeep Brain Stimulation Can Preserve Working Status in Parkinson’s DiseaseGabriella Deli,1István Balás,2Tamás Dóczi,2,3József Janszky,1,3Kázmér Karádi,1Zsuzsanna Aschermann,1Ferenc Nagy,1,4Attila Makkos,1Márton Kovács,1Edit Bosnyák,1 Norbert Kovács,1,3and Sámuel Komoly11Department of Neurology,University of P´e cs,R´e t Utca2,P´e cs7623,Hungary2Department of Neurosurgery,University of P´e cs,R´e t Utca2,P´e cs7623,Hungary3MTA-PTE Clinical Neuroscience MR Research Group,R´e t Utca2,P´e cs7623,Hungary4Department of Neurology,Kaposi M´o r County Hospital,Talli´a n Gyula Utca16,Kaposv´a r7400,HungaryCorrespondence should be addressed to Norbert Kov´a cs;kovacsnorbert06@Received30April2015;Revised8July2015;Accepted16July2015Academic Editor:Eng-King TanCopyright©2015Gabriella Deli et al.This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use,distribution,and reproduction in any medium,provided the original work is properly cited.Objectives.Our investigation aimed at evaluating if bilateral subthalamic deep brain stimulation(DBS)could preserve working capability in Parkinson’s disease(PD).Materials.We reviewed the data of40young(<60year-old)PD patients who underwent DBS implantation and had at least2years of follow-up.Patients were categorized based on their working capability at time of surgery:“active job”group(n=20)and“no job”group(n=20).Baseline characteristics were comparable.Quality of life(EQ-5D) and presence of active job were evaluated preoperatively and2years postoperatively.Results.Although similar(approximately50%) improvement was achieved in the severity of motor and major nonmotor symptoms in both groups,the postoperative quality of life was significantly better in the“active job”group(0.687versus0.587,medians,p<0.05).Majority(80%)of“active job”group members were able to preserve their job2years after the operation.However,only a minimal portion(5%)of the“no job”group members was able to return to the world of active employees(p<0.01).Conclusions.Although our study has several limitations, our results suggest that in patients with active job the appropriately“early”usage of DBS might help preserve working capability and gain higher improvement in quality of life.The present scientific contribution is also dedicated to the650th anniversary of the foundation of the University ofP´e cs,Hungary1.IntroductionThe27-year-old deep brain stimulation(DBS)revolution-ized the treatment of movement disorders including drug-resistant tremor,advanced Parkinson’s disease(PD)[1,2], and dystonia[3].Based on its high efficacy and relatively small side effect profile,more than100,000patients have undergone DBS implantation worldwide[4].Approximately 80%of indications for DBS are the pharmacologically not efficiently treatable PD and considerably less patients receive DBS for other movement disorders[3,5].The most frequently applied surgical target for PD is the bilateral subthalamic DBS(STN DBS)capable of improving all cardinal symptoms.Besides the symptomatic improvement,STN DBS can also dramatically and permanently extend the ON time[6,7]and the health-related quality of life(HRQoL)[8,9].According to the current guidelines,STN DBS is only indicated in the cases of drug-resistant tremor or severe motor fluctuations unmanageable by pharmacological treat-ment.The average disease duration at the time of surgery is around15years[5],by when the health-related quality of life(HRQoL)and sociocultural functioning are usually impaired[10].In general,the longer disease duration is associated with the more likely appearance of levodopa-resistant symptoms and therefore DBS-resistant symptoms and higher impact on the working capability.One of theHindawi Publishing Corporation Parkinson’s DiseaseVolume 2015, Article ID 936865, 8 pages /10.1155/2015/9368652Parkinson’s Diseasemost important parts of patient selection therefore is the appropriate timing of surgery[1,11].If the DBS implantation is preformed“too late,”the presence and severity of DBS-resistant symptoms(e.g.,postural instability,neurocognitive impairment,or speech problems)might interfere with or worsen the outcome.On the contrary,if the surgery is per-formed“too early,”we might operate on those patients who could have been otherwise well treated pharmacologically and needlessly expose them to the potential surgical risks. Moreover,with“too early”operations we might also include some nonidiopathic cases because the atypical features might be hidden in the early stages of the disease course.Based on the hypothesis[12–14]that the STN DBS treat-ment applied at earlier stages of the disease may be superior to the best medication,a multicenter study,called EarlyStim, was initiated[15].In this prospective study,patients receiving STN DBS had significantly larger improvement in HRQoL (−7.8improvement on PDQ-38)than patients on best medical treatment(+0.2points worsening,p=0.002)[15].Although the contributors of EarlyStim study state that,in well-selected cases where the“early”fluctuations impair the sociocultural functioning and HRQoL,STN DBS might be superior to optimal pharmacological treatment[15–17],there are lots of debates on this issue[18,19].Inspired by the results of EarlyStim study,our research group tried to evaluate if STN DBS might have an impact on the working status of PD patients.Our a priori hypothesis was that STN DBS could preserve working capability of patients having an active job at the time of DBS implantation.2.Materials and Methods2.1.Patients.Those patients who were included in the present study underwent bilateral STN DBS implantation at Univer-sity of P´e cs and participated in our prospective DBS registry. All patients signed an informed consent form approved by the Regional Ethical Board of University of P´e cs.Patients were eligible for STN DBS surgery(and therefore for participating in our DBS registry)if they had the clinical diagnosis of PD in accordance with the UK Brain Bank criteria[20]and at least5years of documented disease duration,were under the age of75years,had Parkinsonian motor symptoms or dyskinesia that limited their ability to perform the activities of daily living despite optimal oral pharmacological treat-ment,had no dementia or major psychiatric illness,and had no contraindication to surgery.Presence of dementia was evaluated by the Hungarian validated version of Mattis Dementia Rating Scale(MDRS)[21].The scores on MDRS can range from0to144with lower values indicating more severe dementia.Scores on MDRS≤125points[21]and/or fulfillment of Diagnostic and Statistical Manual of Mental Disorders4th Edition Text Revision criteria for dementia were the exclusion criteria for STN DBS surgery.Out of the group of patients having at least2years of postoperative follow-up,first we identified those patients who had an active job at the time of their STN DBS surgery and whose age was comparable with the inclusion criteria of EarlyStim study(18–60years)[17].Having an active job was assessed by direct inquiry.Only regular(>1day/week), either part-time or full-time,work was defined as active job. Working capability was categorized into the following groups:(i)Full-time work(regular work,5days/week and8hours/day).(ii)Part-time work(regular work,1–5days/week,4–8 hours/day).(iii)Not working,retired due to the disease.(iv)Not working,retired not due to the disease.(v)Never worked.However,we did not consider those who participated only in housework or performed hobby activities or unpaid and irregular tasks as active workers.Altogether20PD patients were identified meeting the above mentioned criteria whom we classified into the group of“active job.”To perform pairwise comparison,we chose another20 patients out of our registry who did not have an active job at the time of their surgery(“no job”group)by the utilization of a custom-made program.The automatic selection process was made in a way that for each participant in the“active job”group we picked a“partner”who had similar age,disease duration,and fluctuation duration(in the range of±2years) and the same disease type(tremor-dominant versus rigid-akinetic type).These matched patients were considered as the“no job”group.We utilized this automatic pairwise selection process to create a“no job”group with balanced and comparable baseline characteristics to the“active job”group.2.2.Applied Tests.Changes in the working capability and the health-related quality of life were considered as coprimary endpoints.Our primary aim was to identify what portion of young patients having active job at the time of DBS surgery maintained their active job2years postoperatively.On the contrary,we also investigated how many young patients not having an active job at DBS initiation returned to work.For evaluating HRQoL,the EuroQol Instrument(EQ-5D)was assessed.Because the usage of EQ-5D requires only2minutes and it was available in validated Hungarian version[22]at the start of our DBS registry project,we chose this HRQoL scale(and not the PDQ-39).EQ-5D had been previously validated[23–25]and utilized in the evaluation of different therapeutic approaches in PD[26,27]. Moreover,it can also be applied to health-related economical calculations[28].EQ-5D consists of two major parts:a five-item questionnaire and a visual analogue scale(V AS). The first part of EQ-5D maps five different domains of HRQoL:mobility,self-care,usual activities,pain/discomfort, and anxiety/depression[22].Based on the responses for the five domains questionnaire,an index value vas calculated (coprimary endpoint).The EQ-5D index can be in the range from−0.52to+1,the former representing a state worse than death and the latter representing the best health-related status[22].For the Hungarian population,a change larger than0.0705denotes clinically meaningful difference[29].The response on V AS can range from0to100,the higher values meaning better HRQoL[22].Parkinson’s Disease3Changes in major motor and nonmotor symptoms were considered as secondary endpoints of the study.Severity of Parkinson’s disease was rated by both Hoehn-Yahr Scale (HYS)and Unified Parkinson’s Disease Rating Scale[30]. In agreement with the recommendations of the Movement Disorders Society Task Force[31],the original(and not the modified)HYS was utilized.Therefore,in our study,the stage of2.5according to the modified HYS was considered as stage 3(original HYS).The most important secondary outcome of our study was the UPDRS Part III(Motor Examination), where the score can range between0and108with higher scores indicating worse function[30].The secondary out-come measures also included changes in activities in daily living measured by the UPDRS Part II and Schwab and England Scale(SES)[32].Scores for the UPDRS-II can range from0to52points with higher scores indicating worse function[30].The scores for SES can be in the range of 0–100with higher values indicating better function.For neuropsychiatric outcomes,the MDRS and Montgomery-Asberg Depression Rating Scale(MADRS)were assessed. Scores for MADRS can range from0to60,with higher values indicating more severe depression.Each scale was assessed by three times(baseline,1 week preoperatively,and follow-ups,12and24months postoperatively).All sessions were videotaped enabling us to reevaluate the HYS and UPDRS Part III with the exception of rigidity by a blinded rater.Amount of antiparkinson med-ication was calculated in levodopa equivalent dosage(LED) [33].2.3.Statistics.All statistical measurements were performed by the IBM SPSS software package(IBM Inc.,USA,version 22.0.1).The level of statistical significance was set at0.05. Because most parameters did not follow the normal distri-bution,nonparametric tests were utilized and median values with interquartile range(IQR:25th–75th percentile)were calculated.Changes within each group(baseline versus follow-ups) were tested by Friedman test(baseline versus1st year of follow-up versus2nd year of follow-up).For intergroup analyses(e.g.,“active job”group versus“no job”group) Mann-Whitney tests were applied.To evaluate changes in dichotomous variables(e.g.,having or not having an active job),McNemar test was used.To overcome the limitations of multiple comparisons, we also applied a mixed-model two-way ANOV A where the first factor has2levels and is independent(2groups:having an active job and not having a job)and the second factor has3levels and is repeated(baseline,1year,and2years). Because ANOV A can provide the difference between the2 groups at all endpoints,there is no need for further post hoc analyses.Furthermore,using this design,we can also assess the interactions.Because simulation studies using a variety of nonnormal distributions have shown that the false positive rate is not affected very much by this violation of the normality assumption[34–36],the nonnormal distri-bution of the data did not preclude using such a statistical design.3.Results3.1.Study Population.For the final analyses,the data of only20pairs were included.Due to the pairwise group selection,the most important baseline PD characteristics were comparable(e.g.,age,sex,disease duration,disease type,and HYS,Table1).Although we could not identify any significant differences,the HY staging favored the“no job”group by having more Stage2patients than the“active job”group did.The dosage of antiparkinson medication,severity of motor symptoms(UPDRS-III),major neuropsychiatric symptoms(MADRS and MDRS),and HRQoL(EQ-5D index and V AS)were also similar at baseline(Table2).3.2.Working Capability.At baseline,18patients had a full-time job and two patients had a part-time job in the“active group.”Two years postoperatively,16patients from the “active job”group(80%)still had an active job(full-time job:8patients;part-time job:8patients).The reasons for work discontinuation included the reach of official age limit for pension(n=1)and PD-related problems interfering with working capability(e.g.,fatigue and some degree of fluctuation,n=3).Despite the comparable baseline characteristics and sim-ilar improvements in the motor symptoms and activities of daily living,only a single person(5%)from the“no job”group returned to the world of active work(McNemar test; p<0.01).3.3.HRQoL.Both groups had similar HRQoL at baseline (EQ-5D index values:0.477and0.429,median values).These values were below the25th percentile of Hungarian popu-lation norms[22].(The25th percentile population norms for the45–54and55–64years age groups are0.69and 0.62,resp.)After bilateral STN DBS implantation,the EQ-5D index significantly improved in both groups(Table2, Friedman tests),which clearly exceeded the threshold of minimal clinically important difference(0.0705)[29].How-ever,2years after the operation,the“active job”group members had significantly better HRQoL than the“no job”patients did(Mann-Whitney test,p<0.001,Table2)and this difference was also clinically meaningful.Therefore,the between-groups comparisons revealed better improvement in the primary outcome(HRQoL)in the“active job”group. The application of mixed-model two-way ANOV A with Bonferroni correction further supported that HRQoL2years postoperatively was better in the“active job”group than in the“no job”group.3.4.Secondary Outcomes.As far as the motor symptoms were concerned(UPDRS-III),both groups had similar baseline characteristics and experienced similar improvement after DBS implantation.Two years after the surgery,the motor severity was still comparable in both groups.Moreover,the changes in activities of daily living(SES and UPDRS-II) and antiparkinson medication were also similar in both groups.The only difference in the secondary outcomes was4Parkinson’s DiseaseT a b l e 1:Th e d e m o g r a p h i c a n d d i s e a s e -s p e c i fi c c h a r a c t e r i s t i c s o f t h e s t u d y p o p u l a t i o n a t b a s e l i n e e x a m i n a t i o n .A c t i v e j o b g r o u p (a t t h e t i m e o f s u r g e r y )N o j o b g r o u p (a t t h e t i m e o f s u r g e r y )S t a t i s t i c s M e d i a nP e r c e n t i l e 25P e r c e n t i l e 75M e a n S t a n d a r d d e v i a t i o n M e d i a nP e r c e n t i l e 25P e r c e n t i l e 75M e a n S t a n d a r d d e v i a t i o n A g e 53505652.64.453505753.14.30.735S e x 15M /5F 15M /5F N A E d u c a t i o n l e v e l ,y 12111311.91.612111311.81.70.879D i s e a s e d u r a t i o n ,y 87108.21.887108.21.60.934L e v o d o p a u s a g e ,y 6586.82.17686.91.50.619F l u c t u a t i o n ,y 4364.82.15464.91.50.619P D t y p e (t r e m o r /r i g i d -a k i n e t i c )9T /11R A 9T /11R A N AH Y S -1000.519H Y S -279H Y S -31311A l l s t a t i s t i c a l a n a l y s e s w e r e p e r f o r m e d b y M a n n -W h i t n e y t e s t w i t h t h e e x c e p t i o n o f H Y S ,w h e r e C h i -s q u a r e t e s t w a s u t i l i z e d .H Y S =H o e h n -Y a h r S t a g e s ;N A =n o t a p p l i c a b l e ;P D =P a r k i n s o n ’s d i s e a s e ;M =m a l e s ;F =f e m a l e s ,y =y e a r s .Parkinson’s Disease5T a b l e 2:C o m p a r i s o n o f “a c t i v e j o b ”a n d “n o j o b ”g r o u p s r e g a r d i n g t h e a c h i e v e d i m p r o v e m e n t s i n h e a l t h -r e l a t e d q u a l i t y o f l i f e a n d m a j o r s y m p t o m s o f P a r k i n s o n ’s d i s e a s e a ft e r b i l a t e r a l s u b t h a l a m i c d e e p b r a i n s t i m u l a t i o n .A c t i v e j o b g r o u p (a t t h e t i m e o f s u r g e r y )N o j o b g r o u p (a t t h e t i m e o f s u r g e r y )B e t w e e n g r o u p s(M a n n -W h i t n e y )M e d i a n P e r c e n t i l e 25P e r c e n t i l e 75M e a n S t a n d a r d d e v i a t i o n F r i e d m a n t e s t (w i t h i n g r o u p )M e d i a n P e r c e n t i l e 25P e r c e n t i l e 75M e a n S t a n d a r d d e v i a t i o n F r i e d m a n t e s t (w i t h i n g r o u p )E Q -5D B a s e l i n e 0.4770.1160.6050.3910.3070.4290.2550.6660.4110.3080.7791y e a r 0.6600.5300.7700.6610.163<0.0010.5070.4390.6910.5430.183<0.0010.0352y e a r s 0.6870.6200.8110.7100.1380.5870.4820.7420.6060.1910.045E Q -5D V A S B a s e l i n e 70558068.114.067507964.417.70.4951y e a r 84719380.414.9<0.00170608269.416.2<0.0010.0372y e a r s 88779081.215.073608071.514.90.021S E S B a s e l i n e 70608071.511.870658071.015.50.8451y e a r 80759082.011.5<0.00180708076.511.80.0020.1532y e a r s 80809081.511.470598068.911.90.001U P D R S -I I I B a s e l i n e 25222925.66.324193023.97.20.5061y e a r 22182622.15.3<0.00122182722.06.3<0.0010.8392y e a r s 22172420.85.020172620.86.40.860U P D R S -I I B a s e l i n e 15141915.44.715121914.95.30.7241y e a r 13101712.94.3<0.00116101914.86.3<0.0010.2432y e a r s 1291612.24.915111915.16.90.116M A D R S B a s e l i n e 76107.93.88597.93.20.7441y e a r 6596.82.60.02075107.43.50.5900.3952y e a r s 5575.71.675107.43.20.066M D R S B a s e l i n e 135130139134.55.6136130143136.16.20.3421y e a r 134128136133.15.80.246133127140133.16.20.2150.9032y e a r s 134130137132.76.3133127140133.26.20.839L E D B a s e l i n e 905.0780.01060.0972.9379.29507501000925.0265.30.9031y e a r 475.0325.0700.0535.1315.0<0.001509.0400.0678.5559.7216.6<0.0010.4472y e a r s 500.0375.0700.0552.5250.5525.0406.0700.0575.0186.50.463F r i e d m a n t e s t w a s u s e d t o e v a l u a t e w i t h i n -g r o u p c h a n g e s (c o m p a r i s o n o f b a s e l i n e v a l u e s w i t h 1s t y e a r a n d 2n d y e a r o f f o l l o w -u p ).M a n n -W h i t n e y t e s t w a s a p p l i e d t o d e t e c t b e t w e e n -g r o u p s d i ff e r e n c e s (e .g .,c o m p a r i s o n o f “a c t i v e j o b ”g r o u p v e r s u s “n o j o b ”g r o u p ).H Y S =H o e h n -Y a h r S t a g e s ;L E D =l e v od o p ae q u i v a l e n t d o s a g e ;M A D R S =M o n t g o m e r y -A s b e r g D e p r e s s i o n R a t i n g S c a l e ;M D R S =M a t t i s D e m e n t i a R a t i n g S c a l e ;S E S =S c h w a b a n d E n g l a n d S c a l e ;U P D R S -I I =A c t i v i t i e s of D a i l y L i v i ng (P a r t I I o f U P D R S );U P D R S =U n i fi e d P a r k i n s o n ’s D i s e a s e R a t i n g S c a l e ;U P D R S -I I I =M o t o r E x a m i n a t i o n (P a r t I I I o f U P D R S );E Q -5D =E u r o Q o l I n s t r u m e n t .6Parkinson’s Diseasethe significant improvement in MADRS score revealed by Friedman test,which was present in the“active job”group but was missing in the“no job”group.The application of mixed-model two-way ANOV A with Bonferroni correction did not identify any differences in the secondary outcomes.4.DiscussionOur primary aim was to evaluate the hypothesized effect of STN DBS on preserving the working capability of PD patients.In our study,only those patients who were young (<60years)and had at least2-year follow-up were included. In the“active job”group,the participants had an active job at the time of surgery but their working capability was impaired by the motor symptoms(both tremor and fluctuations)to some extent.For the“no job”group,we selected patients having similar demographic and PD-related baseline characteristics to perform reliable between-group comparisons.Our aim was to compare the efficacy of STN DBS on patients having an active job(“active job”group)at the time of surgery to the efficacy of STN DBS on patients without an active job(“no job”group).In case of tremor-dominant patients,the presence of drug-resistant tremor was the indication for surgery,whereas,in rigid-akinetic patients, the presence of severe fluctuations was the indication for surgery.Because in both groups the number of tremor-dominant and rigid-akinetic patients was identical due to the pairwise selection,we believe our study design was suitable to draw conclusions.In the present study,the main focus was to reveal if having an active work at the time of DBS implantation could be a prognostic factor for outcome and this working capability could be preserved by STN DBS.One of the most important findings of our study was that80%of patients having an active job at the time of surgery still had an active job2years after the DBS implantation.Nevertheless,only a single patient returned to the world of work in the“no job”group after the successful STN DBS therapy.Therefore,we can conclude that DBS might help preserve the working capability if it is performed in patients with active job.On the contrary,if DBS implantation is scheduled after losing the working capability, it might be insufficient to help patients return to work.The coprimary outcome variable was the change in HRQoL.Patients in the“active job”group experienced higher improvement in HRQoL than patients in the“no job”group did despite the similar changes in motor and major nonmotor symptoms.This finding might suggest that having an active job at the time of DBS surgery might have a beneficial effect on the long-term outcome by being a positive predictive factor.The only difference in the secondary outcomes was the significant improvement in MADRS score revealed by Fried-man test.Because it was not confirmed by the multivariate ANOV A,we considered this difference both clinically and statistically irrelevant.The authors are aware of the major limitations of their study:not being randomized,placebo-controlled,double-blind,multicenter,and prospective and having a relatively small sample size.However,our results nicely fit to the con-cept of EarlyStim because in some individuals the application of“early”DBS might have a beneficial role in the socio-cultural functioning.According to our results,in patients with active job,the appropriately“early”usage of STN DBS might help preserve sociocultural functioning and the working capability in a two-year time frame and gain higher improvement in HRQoL.Despite similar symptomatic con-trol,patients receiving STN DBS after losing their working capability seldom return to work again.In the opinion of the authors,having an active job at the time of surgery might be a positive predicting factor for a good outcome. Because the maintenance of working capability is beneficial not only for the patients but also for the healthcare providers, further,larger,controlled trials are warranted to confirm this hypothesis.AbbreviationsDBS:Deep brain stimulationEQ-5D:EuroQol InstrumentHRQoL:Health-related quality of lifeHYS:Hoehn-Yahr StageLED:Levodopa equivalent dosageMADRS:Montgomery-Asberg Depression Rating Scale MDRS:Mattis Dementia Rating ScalePD:Parkinson’s diseaseSES:Schwab and England ScaleSTN DBS:Bilateral subthalamic deep brain stimulation UPDRS:Unified Parkinson’s Disease Rating ScaleV AS:Visual analogue scale(included in EQ-5D).Conflict of InterestsThe authors declare that there is no conflict of interests regarding the publication of this paper.Authors’ContributionNorbert Kov´a cs and S´a muel Komoly contributed equally to this work.S´a muel Komoly participated in the conception, organization,and execution of the research project,in review and critique of the statistical analysis,in writing the first draft of the paper,and in review and critique of the paper. Ferenc Nagy participated in the conception and organization of the research project and in review and critique of the paper. Zsuzsanna Aschermann participated in the organization of the research project and in review and critique of the paper. J´o zsef Janszky participated in the organization of the research project and in review and critique of the paper.Gabriella Deli participated in the organization of the research project and in review and critique of the paper.Istv´a n Bal´a s participated in the organization of the research project and in review and critique of the paper.Tam´a s D´o czi participated in the orga-nization of the research project and in review and critique of the paper.Edit Bosny´a k participated in the execution of the research project and in review and critique of the paper. Norbert Kov´a cs participated in the conception,organization,Parkinson’s Disease7and execution of the research project,in designing,execution, and review and critique of the statistical analysis,in writing the first draft of the paper,and in review and critique of the paper.Attila Makkos participated in the organization of the research project and in review and critique of the paper. AcknowledgmentsThis study was supported by the Bolyai Scholarship of Hungarian Academy of Sciences,OTKA PD103964, T´AMOP-4.2.2.A-11/1/KONV-2012-0017,and Hungarian Brain Research Program(KTIA13NAP-A-II/10)govern-ment-based funds.Gabriella Deli reported no financial disclosure.Istv´a n Bal´a s received<1000EUR consultation fees from Hungarian subsidiaries of Medtronic.Regarding this study,the author did not receive any corporate funding. S´a muel Komoly received<1000EUR consultation fees from Hungarian subsidiaries of Biogen,TEV A,Astellas,Pfizer, and Novartis.Regarding this pilot study,the author did not receive any corporate funding.Tam´a s D´o czi reported no financial disclosure.J´o zsef Janszky received<1000EUR consultation fees from Hungarian subsidiaries of UCB, Valeant,and Eisai.Regarding this pilot study,the author did not receive any corporate funding.Zsuzsanna Aschermann received<1000EUR consultation fees from Hungarian subsidiaries of Novartis,GlaxoSmithKline,UCB,and Teva Pharmaceutical Industries Ltd.Regarding this study,the author did not receive any corporate funding.Attila Makkos reported no financial disclosure.Edit Bosny´a k reported no financial disclosure.Ferenc Nagy received<1000EUR consultation fees from Hungarian subsidiaries of Boehringer Ingelheim,Novartis,GlaxoSmithKline,UCB,Krka,and AbbVie.Regarding this study,the author did not receive any corporate funding.Norbert Kov´a cs received<1000EUR consultation fees from Hungarian subsidiaries of Medtronic, Boehringer Ingelheim,Novartis,GlaxoSmithKline,UCB, Krka,and AbbVie.Regarding this study,the author did not receive any corporate funding.References[1]N.Kovacs,I.Balas,J.Janszky et al.,“Special aspects ofpatient care after implantation of deep-brain-stimulator,”Ideggy´o gy´a szati Szemle,vol.61,pp.4–15,2008.[2]G.Deuschl,C.Schade-Brittinger,P.Krack et al.,“A randomizedtrial of deep-brain stimulation for Parkinson’s disease,”The New England Journal of Medicine,vol.355,no.9,pp.896–908,2006.[3]G.Deli,I.Bal´a s,S.Komoly et al.,“Treatment of dystonia bydeep brain stimulation:a summary of40cases,”Ideggyogyaszati Szemle,vol.65,no.7-8,pp.249–260,2012.[4]Z.Aschermann,N.Kovacs,and S.Komoly,“Continuousdopaminergic stimulation in Parkinson disease:possibilities in 2013,”Ideggy´o gy´a szati Szemle,vol.66,pp.209–210,2013. [5]G.Kleiner-Fisman,J.Herzog,D.N.Fisman et al.,“Subthalamicnucleus deep brain stimulation:summary and meta-analysis of outcomes,”Movement Disorders,vol.21,supplement14,pp.S290–S304,2006.[6]G.Feh´e r,I.Bal´a s,S.Komoly et al.,“A k´e toldali szubtalamikusstimul´a ci´o hat´e konys´a ga az antiparkinson gy´o gyszerel´e sv´a ltoztat´a s´a nak t¨u kr´e ben,”Ideggy´o gy´a szati Szemle,vol.63,pp.314–319,2010.[7]G.Tam´a s,A.Tak´a ts,P.Radics et al.,“A m´e ly agyi stimul´a ci´ohat´e konys´a ga Parkinson-k´o ros betegeink kezel´e s´e benz,”Ideggy´o gy´a szati Szemle,vol.66,pp.115–120,2013.[8]M.C.Rodriguez-Oroz,E.Moro,and P.Krack,“Long-term out-comes of surgical therapies for Parkinson’s disease,”Movement Disorders,vol.27,no.14,pp.1718–1728,2012.[9]A.Fasano,L.M.Romito,A.Daniele et al.,“Motor and cognitiveoutcome in patients with Parkinson’s disease8years after subthalamic implants,”Brain,vol.133,no.9,pp.2664–2676, 2010.[10]M.Horstink,E.Tolosa,U.Bonuccelli et al.,“Review of the ther-apeutic management of Parkinson’s disease.Report of a joint task force of the European Federation of Neurological Societies and the Movement Disorder Society-European Section.Part I: early(uncomplicated)Parkinson’s disease,”European Journal of Neurology,vol.13,no.11,pp.1170–1185,2006.[11]N.Kov´a cs,B.Istv´a n,L.Carlos et al.,“Deep brain stimulation:a breakthrough in the treatment of movement disorders,”LegeArtis Medicinae,vol.19,no.2,pp.119–126,2009.[12]W.M.M.Sch¨u pbach,D.Maltˆe te,J.L.Houeto et al.,“Neuro-surgery at an earlier stage of Parkinson disease:a randomized, controlled trial,”Neurology,vol.68,no.4,pp.267–271,2007. [13]ng,J.-L.Houeto,P.Krack et al.,“Deep brain stimulation:preoperative issues,”Movement Disorders,vol.21,supplement 14,pp.S171–S196,2006.[14]ng,“Subthalamic stimulation for Parkinson’s disease—living better electrically?”The New England Journal of Medicine, vol.349,no.20,pp.1888–1891,2003.[15]W.M.M.Schuepbach,J.Rau,K.Knudsen et al.,“Neurostimu-lation for Parkinson’s disease with early motor complications,”The New England Journal of Medicine,vol.368,no.7,pp.610–622,2013.[16]W.M.M.Sch¨u pbach,J.Rau,J.-L.Houeto et al.,“Myths and factsabout the EARLYSTIM study,”Movement Disorders,vol.29,no.14,pp.1742–1750,2014.[17]G.Deuschl,M.Sch¨u pbach,K.Knudsen et al.,“Stimulation ofthe subthalamic nucleus at an earlier disease stage of Parkinson’s disease:concept and standards of the EARLYSTIM-study,”Parkinsonism and Related Disorders,vol.19,no.1,pp.56–61, 2013.[18]T.A.Mestre,A.J.Espay,C.Marras,M.H.Eckman,P.Pollak,and ng,“Subthalamic nucleus-deep brain stimula-tion for early motor complications in Parkinson’s disease—the EARLYSTIM trial:early is not always better,”Movement Disorders,vol.29,no.14,pp.1751–1756,2014.[19]A.Keitel,S.Ferrea,M.S¨u dmeyer,A.Schnitzler,and L.Wojtecki,“Expectation modulates the effect of deep brain stimulation on motor and cognitive function in tremor-dominant Parkinson’s disease,”PLoS ONE,vol.8,no.12,Article ID e81878,2013. [20]I.Litvan,K.P.Bhatia,D.J.Burn et al.,“SIC task force appraisalof clinical diagnostic criteria for parkinsonian disorders,”Move-ment Disorders,vol.18,no.5,pp.467–486,2003.[21]B.Kasz´a s,N.Kov´a cs,I.Bal´a s et al.,“Sensitivity and specificityof Addenbrooke’s Cognitive Examination,Mattis Dementia Rating Scale,Frontal Assessment Battery and Mini Mental State Examination for diagnosing dementia in Parkinson’s disease,”Parkinsonism and Related Disorders,vol.18,no.5,pp.553–556, 2012.。
基于数据中心负载分析的自适应延迟调度算法
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电源监控器手册说明书
Supply:Supply:Supply:Mounting Output Frequency 208 to 240 VAC 380 to 415 VAC 380 to 480 VAC DIN-rail 2 x SPDT 50 - 60 Hz DPC 71 D M23DPC 71 D M48Plug-in2x SPDT50 - 60 HzPPC 71 D M23PPC 71 D M48Product Description•TRMS 3-phase over and under voltage,phase sequence, phase loss, asymmetry and tolerance monitoring relay•Detect when all 3 phases are present and have the correct sequence•Detect if all the 3-phase-phase or phase-neutral voltages are within the set limits•Detect if asymmetry and tolerance are within the set value•Separately adjustable setpoints•Separately adjustable delay functions (0.1 to 30 s)•Output: 2 x 5 A relay SPDT NE•For mounting on DIN-rail in accordance withDIN/EN 50 022 (DPC71) or plug-in module (PPC71)•35.5 mm Euronorm housing (DPC71) or 35.5 mm plug-in module (PPC71)•LED indication for relays, alarm and power supply ONType Selection3-phase or 3-phase+neutral line voltage monitoring relay for phase sequence, phase loss, asymmetry, tolerance,over and under voltage (sep-arately adjustable set points)with built-in time delay func-tion.Supply ranges from 208 to 480 VAC covered by two multivoltage relays.DPC71PPC71Input SpecificationsOutput SpecificationsMonitoring RelaysTrue RMS 3-Phase, 3-Phase+N, Multifunction Types DPC71, PPC71DPC71, PPC71Supply SpecificationsGeneral SpecificationsMode of OperationAsymmetry definition.Asymmetry is an indicator of the mains quality and it is defined as the absolute val-ue of the max imum devia-tion among the mains volt-ages, divided by the nominal voltage of the 3-phase sys-tem. The definition changes according to the voltage ref-erence:1)in case of measuring phase-phase voltages:max |∆V PH-PH |V ∆NOM2)in case of measuring phase-neutral voltages:max |∆V PH-N |VNOMTolerance definition.T olerance is another indicator of the mains quality and it is definied as the absolute val-ue of the maximum deviation of the mains voltages from the nominal voltage, divided by the nominal voltage of the 3-phase system. The defini-tion changes according to the voltage reference:1)in case of measuring phase-phase voltages:max |V ∆NOM -V PH-PH |V ∆NOM2)in case of measuring phase-neutral voltages:max |VNOM -V PH-N |VNOMx 100x 100x 100x 100General Specifications (cont.)DPC71, PPC71Mode of Operation (cont.)Connected to the 3 phases (and neutral) DPC71 and PPC71 operate when all 3 phases are present at the same time and the phase sequence is correct. It can be decided whether to mon-itor upper and lower voltage level of each phase or their asymmetry and tolerance. Voltage level monitoring:if one or more phase-phase or phase-neutral voltage ex ceed the upper set level or drop below the lower set level, the red LED starts flashing 2 Hz and the respective output relay releases after the set time period.Asymmetry and tolerancemonitoring:if one or more phase-phaseor phase-neutral voltageexceed the set levels the redLED starts flashing 2 Hz andthe respective output relayreleases after the set timeperiod.Note:For both functions, ifthe phase sequence iswrong or one phase is lost,both output relays releaseimmediately. Only 200 msdelay occurs. The failure isindicated by the red LEDflashing 5 Hz during thealarm condition.Example 1(Mains monitoring - over andunder phase-phase voltage)The relay monitors over andunder voltage, phase lossand correct phasesequence.Example 2(Motor monitoring - startingand operating load - asym-metry and tolerance ofphase-neutral voltage)DPC71 and PPC71 ensurecorrect starting and operat-ing conditions. They monitorthe voltage level, phasesequence (correct directionof the motor rotation) andasymmetry.Frequent failures are fuseblowing and incorrect volt-age level. In case of fuseblowing the motor regener-ates a voltage in the inter-rupted phase. The relaydetects the failure andreacts due to e x cessiveimbalance among the phas-es.Function/Range/Level/Time SettingAdjust the input range set-ting the DIP-switches 3 and 4. Select the desired func-tion setting the DIP-switches 5and 6 as shown below. To access the DIP-switches open the plastic cover using a screwdriver as shown below.Upper knobs: Setting of upper ()and lower () level or setting of asymmetry (ASY) and toler-ance ( ) on relative scale. Lower knobs:Setting of delay on alarm times (DELAY 1, DELAY 2) on absolute scale:0.1 to 30s.DPC71, PPC71Operation DiagramsOver and undervoltage monitoring (2 x SPDT relays)Asymmetry and tolerance monitoring (2 x SPDT relays)DPC71, PPC71Operation Diagrams (cont.)Wiring DiagramsDPC71, PPC71 Dimensions。
一种改进结构的延迟锁相环
一种改进结构的延迟锁相环延迟锁相环（Delay-Locked Loop，DLL）是一种常见的数字锁相环（Digital Phase-Locked Loop，DPLL），通过控制输出信号的相位和频率来使其与参考信号相位和频率保持同步。
DLL广泛应用于时钟同步、通信系统、数字信号处理等领域。
然而，传统的DLL结构在一些特定的应用场景下存在一些问题，比如时延较大、抗噪声性能不佳等。
因此，为了改进DLL的性能，一种改进结构的延迟锁相环被提出。
该结构在传统DLL的基础上进行了一定的改动，具有更好的性能和适应性。
该改进结构的延迟锁相环可以分为以下几个部分：1. 相位检测器（Phase Detector，PD）：相位检测器用于比较参考信号和输出信号的相位差，并输出相位误差信号。
相位检测器的设计需要考虑相位误差的精确度和抗噪声性能。
2. 数字控制振荡器（Digital Controlled Oscillator，DCO）：DCO 根据相位误差信号和频率控制信号来生成调整后的输出信号。
不同于传统DLL中的电压控制振荡器（Voltage Controlled Oscillator，VCO），DCO的控制更加精确，可以实现对输出信号频率和相位的精确控制。
3. 延迟线单元（Delay Line，DL）：延迟线单元用于引入延迟，用于控制输出信号的相位。
传统DLL中的延迟线单元可以采用固定的延迟线或者动态调整延迟线。
改进结构的延迟锁相环中，延迟线单元可以根据需求进行动态调整，并且可以通过控制延迟线的数量和长度来实现更高的自适应性。
4. 进制切换器（Phase Switch，PS）：进制切换器用于切换不同的进制，以适应不同的输入频率。
通常，进制切换器可以将高频输入信号转换为低频信号，并通过延迟线单元实现精确的相位调整。
改进结构的延迟锁相环相比传统DLL具有以下优点：1.更高的自适应性：通过调整延迟线的数量和长度，改进结构的延迟锁相环可以适应不同频率的输入信号，并且可以实现更好的相位调整精度和抗噪声性能。
Arista Networks 精密时间同步协议说明书
Arista Precision Time ProtocolOverviewPrecision timing has become increasingly important with theproliferation of low latency and high performance applications.It is especially critical in HPC or grid environments where thereis a desire to correlate or synchronize events within microseconds, or measure utilization or latency with the highest accuracy. In financial networks and applications there is aneed to instrument transactions among several devices orparticipants with nanosecond precision, and capture data with precision for application back testing and performance validation.Traditionally when precision timing and synchronization is required between individual hosts or networks a coaxial connection to a grand master clock with GPS synchronization is implemented. This requires dedicated cabling and timingcards in every end point, along with GPS antennas for GPS synchronization and atomic clock options for holdover stability, as well as a stratum based hierarchy.PTP was designed to provide precise time distribution over an Ethernet or IP network, as opposed to other timing solutionsthat require a discrete physical infrastructure within the datacenter. PTP provides a standardized, end to end precisiontiming implementation that can be deployed on a standardEthernet network, either in band or out of band of the standarddata plane. This removes the requirement for a separate,dedicated timing infrastructure while providing similar orincreased precision.Until now, data center class switches have not provided ahardware based PTP implementation. This has limited thescale and precision of PTP implementations by requiring Highlights:•Precision Timing requires a robust hardware and software implementation •The 7150S is the first data center switch to offer complete hardware support for PTP boundary andtransparent clockfunctions with the highest levels of precision and scalability in the market Technical Bulletindedicated PTP hardware at every point, essentially minimizing the benefit of a common infrastructure for both data forwarding and time synchronizations. This document will review how the Arista 7150 data center switch enables high precision time distribution directly in the data path, while improving the scale, precision, and cost of a precise time infrastructure.PTP Baseline requirements: A Solid HardwareFoundationThe Arista 7150S delivers robust PTP functionality in a data center classEthernet switching platform. The PTP implementation on the 7150 is atwo-step process that is hardware-assisted for the highest accuracypossible. On ingress or egress of prescribed PTP event messages, the7150 ASIC records the arrival or transmission time with ~10ns resolutionusing a high resolution 31-bit hardware timestamp. This enables a highprecision boundary clock and tightly integrated transparent clockingfunctionality that provides nanosecond level time synchronizationperformance.The 7150S also has an onboard high precision “Oven-Controlled Crystal Oscillator” (OXCO) that provides exponentially better cycle-to-cycle jitter and holdover performance than a standard system clock. This clock is the time base for the system and disciplines the CPU, ASIC, and a system FPGA that provides hardware acceleration for PTP, LANZ, and other unique EOS features.The 7150S hardware-based functionality enables the switch to participate and enhance a PTP implementation in two ways: by improving the scalability of the PTP grandmaster and delivery of PTP messages, and by providing an accurate calculation and correction of the time taken by PTP packets to traverse devices or the entire network.The boundary clock function allows end devices (ordinary clocks or “slaves”) to be served by the local switch, offloading processing from the grand master, and distributing time across VLAN or routed boundaries. Transparent clocking instruments how long PTP packets spent in the network or device so that slaves can synchronize quickly and accurately with the time being distributed by the master clock. Both of these use models are discussed in more detail below.The 7150 Boundary Clock : Scaling the GrandmasterOne factor to consider in the design of a PTP system is how many slaves or network segments a grandmaster clock can service while maintaining a set level of accuracy. This is typically limited by the amount of PTP sync packets a master can generate, delay messages it can receive, or interfaces it supports without delaying PTP messages and introducing unintentional clock skew. The PTP boundary clock function addresses this issue as an intermediate clock that acts as a slave to the master and performs master functions for multiple slaves downstream, while maintaining a high level of accuracy.As an example, if a master clock is capable of supporting 100 devices, and each boundary clock can support an additional 100 devices, the PTP implementation can scale by 100X by implementing a single tier of boundary clocks in the network, achieving a much larger network than with the grand master clock alone. This also prevents having to provision numerous grand masters at different points in the network. As the boundary clock becomes the authoritativesource of time to slaves downstream, the on-board high precision clock is absolutely critical to maintain precision in the case where synchronization with the master clock is lost.The boundary function is useful in deployments where a grandmaster is installed at a fixed location with GPS access and the time distribution network encompasses multiple network devices with many slaves, or even multiple sites. Deploying multiple boundary clocks in a remote site is useful for providing redundancy in a PTP deployment. Via the Best Master Clock (BMC) election process, the boundary clock ensures continued synchronization for downstream slaves if a single master fails.The 7150 Boundary Clock : Multi-tenancy Without CompromiseThe 7150S boundary clock implementation addresses a problem seen in many of the popular financial colocation data centers, which is a limitation on provisioning unique GPS antennas for every customer. As opposed to dedicated roof access and serial cabling infrastructure, data center providers would like to be able to deliver precision timing in-band with lower cost and better scalability. The consumers of the time signal want an accurate, precise sync without having to buy additional infrastructure or manage off-premise wiring. The 7150S boundary clock implementation addresses these desires and provides a means of distributing precise time over the Ethernet cross connect to each participant, while providing network isolation and guaranteed services via routing and data plane filtering. When deployed with a transparent clock enabled Arista switch this network can scale both in number of slaves and physical distance from the grandmaster.The 7150 Transparent Clock: Enabling the End to End Precision PTP relies on instrumenting the delay between the master and slave to correctly instrument offset. The less variability in the delay, the more accurate the synchronization will be maintained. In some PTP deployments, the slaves may be a number of network hops away from the master clock. Each network hop has the potential to introduce a non-deterministic amount of latency based on queuing or congestion of the interface at the time the PTP packet is transmitted.The Arista PTP transparent clock functionality provides 2 modes to eliminate queuing processing, and propagation delay for PTP messages. In transparent E2E (End to End) mode each Arista 7150 in the path to the slave measures the residence time (RT) of a PTP packet in its queue and modifies the RT field in the PTP messaging to indicate if the message was delayed. The slave receives the PTP message and uses the RT data to calculate and remove the jitter the network introduced, thereby maintaining lock with the master based on a consistent delay.In transparent P2P (Peer to Peer) mode, an independent set of PTP messages operating on a point to point basis between each transparent clock calculates peer delay versus path delay, in addition to correcting the RT of the PTP packet. This per hop delay analysis provides a mechanism to remove propagation delay variance, which may be especially useful in implementations where there are multiple links that may vary in latency between the slave and master. In large scale data center environments the transparent clock is key in mitigating queuing or link variability.ConclusionThe 7150S is the first product in the data center switch segment to offer complete hardware support for PTP boundary and transparent clock functions with the highest levels of precision and scalability in the market. These capabilities unlock the limits on the scale and precision of PTP implementations that no longer require dedicated PTP hardware at every point and provide a common infrastructure for both data forwarding and time synchronization.。
2010-PE-07---Effects of Discretization Methods on the Performance of Resonant Controllers
Effects of Discretization Methods on the Performance of Resonant ControllersAlejandro G.Yepes,Student Member,IEEE,Francisco D.Freijedo,Member,IEEE, Jes´u s Doval-Gandoy,Member,IEEE,´Oscar L´o pez,Member,IEEE,Jano Malvar,Student Member,IEEE,and Pablo Fernandez-Comesa˜n a,Student Member,IEEEAbstract—Resonant controllers have gained significant impor-tance in recent years in multiple applications.Because of their high selectivity,their performance is very dependent on the ac-curacy of the resonant frequency.An exhaustive study about dif-ferent discrete-time implementations is contributed in this paper. Some methods,such as the popular ones based on two integrators, cause that the resonant peaks differ from expected.Such inac-curacies result in significant loss of performance,especially for tracking high-frequency signals,since infinite gain at the expected frequency is not achieved,and therefore,zero steady-state error is not assured.Other discretization techniques are demonstrated to be more reliable.The effect on zeros is also analyzed,establishing the influence of each method on the stability.Finally,the study is extended to the discretization of the schemes with delay compensa-tion,which is also proved to be of great importance in relation with their performance.A single-phase active powerfilter laboratory prototype has been implemented and tested.Experimental results provide a real-time comparison among discretization strategies, which validate the theoretical analysis.The optimum discrete-time implementation alternatives are assessed and summarized.Index Terms—Current control,digital control,power condition-ing,pulsewidth-modulated power converters,Z transforms.N OMENCLATUREVariablesC Capacitance.f Frequency in hertz.G(s)Model in the s domain.G(z)Model in the z domain.H(s)Resonant controller in the s domain.H(z)Resonant controller in the z domain.i Current.K Gain of resonant controller.L Inductance value.m Pulsewidth modulation(PWM)duty cycle. N Number of samples to compensate with com-putational delay compensation.n Highest harmonic to be compensated. Manuscript received September17,2009;revised December29,2009.Date of current version June18,2010.This work was supported by the Spanish Min-istry of Education and Science under Project DPI2009-07004.Recommended for publication by Associate Editor P.Mattavelli.The authors are with the Department of Electronic Technology,University of Vigo,Vigo36200,Spain(e-mail:agyepes@uvigo.es;fdfrei@uvigo.es;jdoval@ uvigo.es;olopez@uvigo.es;janomalvar@uvigo.es;pablofercom@uvigo.es). Color versions of one or more of thefigures in this paper are available online at .Digital Object Identifier10.1109/TPEL.2010.2041256R Equivalent series resistance value.R(s)Resonant term in the s domain.R(z)Resonant term in the z domain.T Period.θPhase of grid voltage.V V oltage.ωAngular frequency in radians per second.u(s)Input value.y(s)Output value.Subscripts1Fundamental component.a Actual value(f).c Generic current controller(G).d Degree of freedom in the zero-pole matchingdiscretization method(K).dc Relative to the dc link(V).f Relative to the passive inductivefilter(V,i,L,R,and G).I Equivalent to the double of the integral gainof a proportional+integral(PI)controller indq frame(K).k Relative to the k th harmonic(H,R,K P,andK I).L Relative to the load(i).Lh Relative to the harmonics of the load(i).o Resonant frequency of a continuous resonantterm or resonant controller(f andω).P Equivalent to the double of the proportionalgain of a PI controller in dq frame(K). PCC Relative to the point of common coupling(V).PL Relative to the plant(G).rms Root mean square.s Relative to sampling(f and T).src Relative to the voltage source(V,i,and L). sw Relative to switching(f).T Sum of the gains for every value of harmonicorder k(K P).X Resonant term R or resonant controller Hdiscretized with method X,where X∈{zoh,foh,f,b,t,tp,zpm,imp}.X&Y Resonant term R or resonant controller Himplemented with two discrete integrators,with the direct one discretized with method Xand the feedback one with method Y,whereX,Y∈{zoh,foh,f,b,t,tp,zpm,imp}.0885-8993/$26.00©2010IEEEX−Y Resonant controller H VPI(z),in whichR1(s)is discretized with method X andR2(s)with method Y,where X,Y∈{zoh,foh,f,b,t,tp,zpm,imp}. Superscripts∗Reference value.1Resonant term R of the form s/(s2+ω2o). 2Resonant term R of the form s2/(s2+ω2o).d Including delay compensation(H and R). PR Resonant controller H of the PR type.VPI Resonant controller H of the VPI type. Others∆x Difference between x and its target value(i f).ˆx Estimated value of x(θ1andω1).I.I NTRODUCTIONI N recent years,resonant controllers have gained significantimportance in a wide range of different applications due to their overall good performance.They have been applied with satisfactory results to cases such as distributed power generation systems[1],[2],dynamic voltage regulators[3],[4],wind tur-bines[5],[6],photovoltaic systems[7],[8],fuel cells[9],[10], active rectifiers[11],active powerfilters(APFs)[12]–[17], microgrids[18],and permanent magnet synchronous motors [19].Resonant controllers allow to track sinusoidal references of arbitrary frequencies with zero steady-state error for both single-phase and three-phase applications.An important saving of computational burden and complexity is obtained due to their implementation in stationary frame,avoiding the coordinates transformations,and providing perfect tracking of both positive and negative sequences[1],[13],[14],[20]–[22].Resonant con-trollers in synchronous reference frame(SRF)have been also proposed to control pairs of harmonics simultaneously when no unbalance exist[7],[15]–[17],[22],[23].An essential step in the implementation of resonant digital controllers is the discretization.Because of the narrow band and infinite gain of resonant controllers,they are specially sensitive to this process.Actually,a slight displacement of the resonant poles causes a significant loss of performance.In the case of proportional+resonant(PR)controllers[14],[20]–[22],even for small frequency deviations,the effect of resonant terms becomes minimal,and the PR controller behaves just as a proportional one[14].The resonant regulator proposed in[16]is less sensitive to these variations when cross coupling due to the plant appears in the dq frame,but if these deviations in the resonant poles are present,it does not achieve zero steady-state error either. Furthermore,if selectivity is reduced to increase robustness to frequency variations,undesired frequencies and noise may be amplified.Thus,an accurate peak position is preferable to low selectivity.Therefore,it is of paramount importance to study the effectiveness of the different alternatives of discretization for implementing digital resonant controllers,due to the critical characteristics of their frequency response.As proved in this paper,many of the existing discretization techniques cause a displacement of the poles.This fact results in a deviation of the frequency at which the infinite gain occurs with respect to the expected resonant frequency.This error becomes more significant as the sampling time and the desired peak frequency increase.In practice,it can be stated that most of these discretization methods result in suitable implementations when tracking50/60Hz(fundamental)references and even for low-order harmonics.However,as shown in this paper,some of them do not perform so well in applications in which signals of higher frequencies should be tracked,such as APFs and ac motor drives. This error has special relevance in the case of implementations based on two integrators,since it is a widely employed option mainly due to its simplicity for frequency adaptation[8],[13], [15],[23]–[25].Discretization also has an effect on zeros,modifying their distribution with respect to the continuous transfer function. These discrepancies should not be ignored because they have a direct relation with stability.In fact,resonant controllers are often preferred to be based on the Laplace transform of a cosine function instead of that of a sine function because its zero im-proves stability[13],[19].In a similar way,the zeros mapped by each technique will affect the stability in a different man-ner.Consequently,it is also convenient to establish which are the most adequate techniques from the point of view of phase versus frequency response.However,for large values of the resonance frequency,the computational delay affects the system performance and may cause instability.Therefore,a delay compensation scheme should be implemented[14],[15],[17],[23].It can be per-formed in the continuous domain as proposed in[15].However, the discretization of that scheme leads to several different expressions.A possible implementation in the z domain was posed in[14],but there are other possibilities.Consequently,it should be analyzed how each method affects the effectiveness of the computational delay compensation.This aspect has a significant relevance since it will determine the stability at the resonant frequencies.The study of these effects of the discretization on resonant controllers has not been analyzed in the existing literature. Therefore,it is of paramount importance to analyze how each method affects the performance in relation with these aspects.A single-phase APF laboratory prototype has been built to check the theoretical approaches,because it is an application very suitable for proving the controllers performance when tracking different frequencies,and results can be extrapolated to other single-phase and three-phase applications where a perfect tracking/rejection of references/disturbances is sought through resonant controllers.The paper is organized as follows.Section II presents alterna-tive digital implementations of resonant controllers.The reso-nant peak displacement depending on the discretization method, as well as its influence on stability,is analyzed in Section III. Several discrete-time implementations including delay compen-sation,and a comparison among them,are posed in Section IV. Section V summarizes the performance of the digital imple-mentations in each aspect and establishes the most optimum alternatives depending on the existing requirements.Finally, experimental results of Section VII validate the theoreticalanalysis regarding the effects of discretization on the perfor-mance of resonant controllers.II.D IGITAL I MPLEMENTATIONS OF R ESONANT C ONTROLLERS A.Resonant Controllers in the Continuous DomainA PR controller can be expressed in the s domain as[14],[20]–[22]H PR(s)=K P+K Iss2+ω2o=K P+K I R1(s)(1)withωo being the resonant angular frequency.R1(s)is the resonant term,which has infinite gain at the resonant frequency (f o=ωo/2π).This assures perfect tracking for components rotating at f o when implemented in closed-loop[21].R1(s) is preferred to be the Laplace transform of a cosine function instead of that of a sine function,since the former provides better stability[13],[19].H PR(s)in stationary frame is equivalent to a propor-tional+integral(PI)controller in SRF[21].However,if cross coupling due to the plant is present in the dq frame,unde-sired peaks will appear in the frequencies around f o in closed loop[17].This anomalous behavior worsens even more the per-formance when frequency deviates from its expected value.An alternative resonant regulator,known as vector PI(VPI)con-troller,is proposed in[16]:H VPI(s)=K P s2+K I ss2+ω2o.(2)The VPI controller cancels coupling terms produced when the plant has the form1/(sL f+R f)[16],[17],[23],such as in shunt APFs and ac motor drives,with L f and R f being, respectively,the inductance and the equivalent series resistance of an R–Lfilter.Parameters detuning due to estimation errors in the values of L f and R f has been proved in[17]to have small influence on the performance.H VPI(s)can be decomposed as the sum of two resonant terms,R1(s)and R2(s),as follows:H VPI(s)=K Ps2s2+ω2o+K Iss2+ω2o=K P R2(s)+K I R1(s).(3) Equation(3)permits to discretize R1(s)and R2(s)with dif-ferent methods.In this manner,the most optimum alternative for H VPI(z)will be the combination of the most adequate discrete-time implementation for each resonant term.B.Implementations Based on the Continuous Transfer Function DiscretizationTable I shows the most common discretization methods.The Simpson’s rule approximation has not been included because it transforms a second-order function to a fourth-order one,which is undesirable from an implementation viewpoint[26].The techniques reflected in Table I have been applied to R1(s) and R2(s),leading to the discrete mathematical expressions shown in Table II.T s is the controller sampling period and f s=1/T s is the sampling rate.From Table II,it can be seen thatTABLE IR ELATIONS FOR D ISCRETIZING R1(s)AND R2(s)BY D IFFERENT METHODS the effect of each discretization method on the resonant poles displacement will be equal in both R1(s)and R2(s),since each method leads to the same denominator in both resonant terms. It should be noted that zero-pole matching(ZPM)permits a degree of freedom(K d)to maintain the gain for a specific frequency[26].C.Implementations Based on Two Discrete IntegratorsThe transfer function H PR(s)can be discretized by decom-posing R1(s)in two simple integrators,as shown in Fig.1(a) [13].This structure is considered advantageous when imple-menting frequency adaptation,since no explicit trigonometric functions are needed.Whereas other implementations require the online calculation of cos(ωo T s)terms,in Fig.1schemes the parameterωo appears separately as a simple gain,so it can be modified in real time according to the actual value of the frequency to be controlled.Indeed,it is a common practice to implement this scheme due to the simplicity it permits when frequency adaptation is required[13],[15],[24],[25].An analogous reasoning can be applied to H VPI(s),leading to the block diagram shown in Fig.1(b).Instead of developing an equivalent scheme to the total transfer function H VPI(s), it could be obtained as an individual scheme for implementing each resonant term R1(s)and R2(s)could be obtained,but in this case the former is preferable because of the saving of resources.It has been suggested in[8]to discretize the direct integrator of Fig.1(a)scheme using forward Euler method and the feedback one using the backward Euler method.Additional alternatives of discretization for both integrators have been analyzed in[25], and it was also proposed to use Tustin for both integrators,or to discretize both with backward Euler,adding a one-step delay in the feedback line.Nevertheless,using Tustin for both integrators poses implementation problems due to algebraic loops[25].In this paper,these proposals have been also applied to the block diagram shown in Fig.1(b).Table III shows these three discrete-time implementations of the schemes shown in Fig.1.TABLE IIz -D OMAIN T RANSFER F UNCTIONS O BTAINED BY D ISCRETIZING R 1(s )AND R 2(s )BY D IFFERENT METHODSFig.1.Block diagrams of frequency adaptive resonant controllers (a)H P R (s )and (b)H V P I (s )based on two integrators.It should be noted that H jt&t (z )and H j t (z )are equivalent for both j =PR and j =VPI ,since the Tustin transformation is based on a variable substitution.The same is true for the rest of methods that consist in substituting s as a function of z .However,zero-order hold (ZOH),first-order hold (FOH),and impulse invariant methods applied separately to each integratordo not lead to H j zoh,H j foh ,and H jimp ,respectively.Indeed,to dis-cretize an integrator with ZOH or FOH results in the same way as a forward Euler substitution,while to discretize an integrator with the impulse invariant is equivalent to employ backward Euler.III.I NFLUENCE OF D ISCRETIZATION M ETHODSON R OOTS D ISTRIBUTIONA.Resonant Poles DisplacementThe z domain transfer functions obtained in Section II can be grouped in the sets of Table IV,since some of them present an identical denominator,and therefore,coinciding poles.Fig.2represents the pole locus of the transfer functions in Table IV.Damped resonant controllers do not assure perfect tracking [21];poles must be placed in the unit circumference,which corresponds to a zero damping factor (infinite gain).All discretization techniques apart from A and B lead to undamped poles;the former maps the poles outside of the unit circle,whereas the latter moves them toward the origin,causing a damping factor different from zero,so both methods should be avoided.This behavior finds its explanation in the fact that these two techniques do not map the left half-plane in the s domain to the exact area of the unit circle [26].However,there is an additional issue that should be taken into account.Although groups C ,D ,and E achieve infinite gain,it can be appreciated that,for an identical f o ,their poles are located in different positions of the unit circumference.This fact reveals that there exists a difference between the actual resonant frequency (f a )and f o ,depending on the employed implementation,as also observed in Fig.3(d).Consequently,the infinite gain may not match the frequency of the controller references,causing steady-state error.Fig.3(a)–(c)depicts the error f o −f a in hertz as a function of f o and f s for each group.The poles displacement increases with T s and f o ,with the exception of group E .The slope of the error is also greater as these parameters get higher.Actually,the denominator of group D is a second-order Tay-lor series approximation of group E .This fact explains the in-creasing difference between them as the product ωo T s becomes larger.Some important outcomes from this study should be highlighted.1)The Tustin transformation,which is a typical choice in digital control due to its accuracy in most applications,features the most significant deviation in the resonant frequency.2)The error exhibited by the methods based on two dis-cretized integrators becomes significant even for highTABLE IIID ISCRETE T RANSFERF UNCTIONS H P R (s )AND H V P I (s )O BTAINED BY E MPLOYING T WO D ISCRETIZED INTEGRATORSTABLE IVG ROUPS OF E XPRESSIONS W ITH I DENTICAL P OLES IN THE z DOMAINFig.2.Pole locus of the discretized resonant controllers at f s =10kHz (fundamental to the 17th odd harmonics).sampling frequencies and low-order harmonics.For in-stance,at f s =10kHz,group D exhibits an error of +0.7Hz for the seventh harmonic,which causes a consid-erable gain loss [see Fig.3(d)].When dealing with higher harmonic orders (h ),such as 13and 17,it raises to 4.6and 10.4Hz,respectively,which is unacceptable.3)Group E leads to poles that match the original continuous ones,so the resonant peak always fits the design frequency f o .B.Effects on Zeros DistributionOnce assured infinite gain due to a correct position of the poles,another factor to take into account is the displacement of zeros caused by the discretization.Resonant controllers that be-long to group E have been proved to be more suitable for an op-timum implementation in terms of resonant peak displacement.However,the numerators of these discrete transfer functions are not the same,and they depend on the discretization method.This aspect has a direct relation with stability,so it should not be ignored.On the other hand,although group D methods produce a resonant frequency error,they avoid the calculation of explicit cosine functions when frequency adaptation is needed.This fact may imply an important saving of resources.Therefore,it is also of interest to establish which is the best option of that set.The analysis will be carried out by means of the frequency response.The infinite gain at ωo is given by the poles po-sition,whereas zeros only have a visible impact on the gain at other frequencies.Concerning phase,the mapping of zeros provided by the discretization may affect all the spectrum,in-cluding the phase response near the resonant frequency.Due to the high gain around ωo ,the phase introduced by the reso-nant terms at ω≈ωo will have much more impact on the phase response of the whole controllers than at the rest of the spec-trum [14].Therefore,the influence of discretization on the stabil-ity should be studied mainly by analyzing the phase lag caused at ω≈ωo .1)Displacement of R 1(s )Zeros by Group E Discretiza-tions:Fig.4compares the frequency response of a resonant controller R 1(s ),designed for the seventh harmonic,when dis-cretization methods of group E are employed at f s =10kHz.An almost equivalent magnitude behavior is observed,eventhough R 1imp(z )has a lower attenuation in the extremes,and both R 1tp (z )and R 1foh (z )tend to reduce the gain at high fre-quencies.However,the phase versus frequency plot differs more significantly.From Fig.4,it can be appreciated that R 1tp(z )and R 1foh (z )are the most accurate when comparing with R 1(s ).On thecontrary,the phase lag introduced by R 1zoh (z )and R 1zpm (z )is higher than for the continuous model.This fact is particu-larly critical at ω≈ωo ,even though they also cause delay for higher frequencies.As shown in Fig.4,they introduce a phase lag at f o =350Hz of 6.3◦.For higher values of ωo T s ,it be-comes greater.For instance,if tuned at a resonant frequency of f o =1750Hz with f s =10kHz,the delay is 32◦.There-fore,the implementation of R 1zoh (z )and R 1zpm (z )may lead to instability.On the other hand,R 1tp (z ),R 1foh (z ),and R 1imp(z )accurately reproduce the frequency response at the resonance frequency,maintaining the stability of the continuous controllerat ωo .Fig.4also shows that R 1imp(z )can be considered the most advantageous implementation of R 1(s ),since it maintains the stability at ω≈ωo and introduces less phase lag in open-loop for the rest of the spectrum,thereby allowing for a larger phase margin.Fig.3.Deviation of the resonance frequency of the discretized controller f a from the resonance frequency f o of the continuous controller.(a)Group C transfer functions.(b)Group D transfer functions.(c)Group E transfer functions.(d)Discretized seventh harmonic resonant resonant controller at f s= 10kHz.Fig.4.Bode plot of R1(s)discretized with group E methods for a seventh harmonic resonant controller at f s=10kHz.In any case,the influence of the discretization atω=ωo is not as important as its effect on the stability atω≈ωo,since the gain of R1(z)is much lower at those frequencies.Consequently, this aspect can be neglected unless low sample frequencies, high resonant frequencies,and/or large values of K I/K P are employed.In these cases,it can be taken into account in order to avoid unexpected reductions in the phase margin that could affect the stability,or even to increase its value over the phase margin of the continuous system by means of R1imp(z).2)Displacement of R2(s)Zeros by Group E Discretizations: The frequency response of R2(s)discretizations is shown in Fig.5(a).It can be seen that ZOH produces a phase lag near the resonant frequency that could affect stability.Among the rest of possibilities of group E,the impulse invari-ant method is also quite unfavorable:it provides much less gain after the resonant peak than the rest of the discretizations.This fact causes that the zero phase provided by R2(z)forω>ωo has much less impact on the global transfer function H VPI(z), in comparison to the phase delay introduced by R1(z).In this manner,the phase response of H VPI(z)would show a larger phase lag if R2(s)is discretized with impulse invariant instead of other methods,worsening the stability atω>ωo. Actually,as shown in Fig.5(b),if R2imp(z)is used,the delay of H VPI(z)can become close to−45◦for certain frequencies, which is certainly not negligible.This is illustrated,as an exam-ple,in Fig.5(b),in which Bode plot of H VPI(z)is shown when it is implemented as R1imp(z),and R2(s)is discretized with the different methods.Fixed values of K I and K P have been employed to make the comparison possible.K I=K P R f/L f has been chosen,so the cross coupling due to the plant is can-celed[16],[17],and an arbitrary value of1has been assigned to K P as an example.According to the real parameters of the laboratory prototype,L f=5mH and R f=0.5Ω.If the ra-tio K I/K P is changed,the differences will become more or less notable,but essentially,each method will still affect in the same manner.It should be remarked that the phase responseFig.5.Study of group E discretizations effect on R2(s)zeros.(a)Frequency response of R2(s)discretized with group E methods for a seventh harmonic resonant controller at f s=10kHz.(b)Frequency response of H V P I(z)for a third harmonic resonant controller at f s=10kHz,with R1im p(z),when R2(s) is discretized by each method of group E.K P=1and K I=K P R f/L f, with R f=0.5Ωand L f=5mH.of H VPI(z)atω≈ωo is not modified by R1imp(z),but only by the discretization of R2(s).Fig.5(b)also shows that some implementations introduce less phase at low frequencies than H VPI(s),but the influence of this aspect on the performance can be neglected.In conclusion,any of the discretization methods of group E, with the exception of impulse invariant and ZOH,are adequate for the implementation of R2(z).Actually,the influence of these two methods is so negative that they could easily lead to instability continuous resonant controllers with considerable stability margins.3)Displacement of Zeros by Group D Discretizations: Fig.6(a)shows the Bode plot of R1(s)implemented with setD schemes.R1f&b (z)produces a phase lead in comparisontoFig.6.Frequency response of R1(s)and H V P I(s)implemented with groupD methods for a seventh harmonic resonant controller at f s=10kHz.(a)R1(s).(b)H V P I(s),K P=1,and K I=K P R f/L f,with R f=0.5Ωand L f=5mH.R1(s),whereas R1b&b(z)causes a phase lag.This is also trueatω≈ωo,which are the most critical frequencies.Therefore,R1f&b(z)is preferable to R1b&b(z).On the other hand,as can beappreciated in Fig.6(b),the Bode plot of H VPIf&b(z)and H VPIb&b(z)scarcely differ.They both achieve an accurate reproduction ofH VPI(s)frequency response.Actually,atω≈ωo,they provideexactly the same phase.Consequently,they can be indistinctlyemployed with satisfactory results.IV.D ISCRETIZATION I NFLUENCE ON C OMPUTATIONALD ELAY C OMPENSATIONA.Delay Compensation in the Continuous DomainFor large values ofωo,the delay caused by T s affects the sys-tem performance and may cause instability.Therefore,a delaycompensation scheme should be implemented[14],[15],[17], [23],[27].1)Delay Compensation for H PR(s):Concerning resonant controllers based on the form H PR(s),a proposal was posed in[15]for performing the compensation of the computational delay.The resulting transfer function can be expressed in the s domain asH PR d(s)=K P+K I s cos(ωo NT s)−ωo sin(ωo NT s)s2+ω2o=K P+K I R1d(4) with N being the number of sampling periods to be compen-sated.According to the work of Limongi et al.[23],N=2is the most optimum value.2)Delay Compensation for H VPI(s):Because of H VPI(s) superior stability,it only requires computational delay for much greater resonant frequencies than H PR(s)[16],[17],[23]. Delay compensation could be obtained by selecting K P= cos(ωo NT s)and K I=−ωo sin(ωo NT s).However,this ap-proach would not permit to choose the parameters so as to satisfy K I/K P=R f/L f;thus,it would not cancel the cross coupling terms as proposed in[16]and[17].Therefore,an alternative approach is proposed shortly. R1d(s)and R2d(s)are individually implemented with a de-lay compensation of N samples each,so K P and K I can be still adjusted in order to cancel the plant pole:H VPI d(s)=K P s2cos(ωo NT s)−sωo sin(ωo NT s)s2+ω2o+K I s cos(ωo NT s)−ωo sin(ωo NT s)s2+ω2o=K P R2d+K I R1d.(5)3)Delay Compensation for R1d(s)and R2d(s):If the res-onant terms are decomposed by the use of two integrators,it is possible to perform the delay compensation by means of the block diagrams depicted in Fig.7(a)and(b)for R1d(s)and R2d(s),respectively.Fig.8illustrates the effect of the computational delay com-pensation for both R1d(s)and R2d(s),setting f o=350Hz and f s=10kHz as an example.As N increases,the180◦phase shift at f o rises,compensating the phase lag that would be caused by the delay.B.Discrete-Time Implementations of Delay Compensation SchemesAs stated in the previous section,the delay compensation should be implemented for each resonant term separately.For this reason,it is convenient to study how each discretization method affects the effectiveness of the delay compensation for R1d(z)and R2d(z)individually.Effects on groups E and D implementations,due to their superior performance,are ana-lyzed.Tables V and VI reflect the discrete transfer functions obtained by the application of these methods to R1d(s)andR2d(s),respectively.R1df&b (z)and R1db&b(z)result of apply-ing the corresponding discretization transforms to theschemeFig.7.Implementations of(a)R1d(s)and(b)R2d(s)based on twointegrators.Fig.8.Frequency response of(a)R1d(s)and(b)R2d(s)for different valuesof N;f o=350Hz and f s=10kHz.shown in Fig.7(a).On the other hand,R2df&b(z)and R2db&b(z) are obtained by discretizing the integrators shown in Fig.7(b).Substituting N=0in Tables V and VI leads to the expres-sions of Tables II and III,respectively.It can be also noted that。
时空依赖 英语表述
时空依赖英语表述Temporal and Spatial Dependencies.Temporal and spatial dependencies are two fundamental concepts that underlie our understanding of the interconnectedness and evolving nature of phenomena in various domains, ranging from physics to social sciences. These dependencies refer to the relationships between events or objects that are influenced by time and space, respectively.Temporal dependency is the relationship between events or observations that occur at different points in time. It encapsulates the idea that what happens at one time can influence what happens at another time. This is a crucial consideration in areas like meteorology, where the weather patterns of today can inform predictions for tomorrow. In the realm of finance, temporal dependencies are essential for understanding how market trends evolve over time, influencing investment decisions. Similarly, inneuroscience, temporal dependencies underlie our understanding of how neural activity patterns change over time, leading to the perception of motion or the processing of information.Spatial dependency, on the other hand, refers to the relationships between events or objects that are influenced by their physical proximity or location. This concept is central to fields like geography, where spatial patterns of population distribution, resource availability, and environmental factors influence regional development. In ecology, spatial dependencies are key to understanding how species interactions and habitats are distributed across landscapes. Urban planning also relies heavily on spatial dependencies, as they determine how cities grow, the flow of traffic, and the distribution of services.Temporal and spatial dependencies often coexist and intersect in complex systems. For instance, in climate science, changes in temperature and precipitation patterns over time are influenced by spatial factors like the distribution of land masses, ocean currents, and elevation.In social networks, the spread of information or trends can be influenced by both temporal factors like the time of day or week and spatial factors like the geographic location of users.The analysis of temporal and spatial dependencies requires sophisticated statistical techniques and models. Time series analysis, for instance, is a widely used method for studying temporal dependencies by examining how variables change over time. Spatial analysis techniques, such as geographic information systems (GIS) and spatial statistics, allow researchers to identify patterns and relationships between events or objects based on their spatial arrangement.In conclusion, temporal and spatial dependencies are fundamental to our understanding of the world. They underlie the interconnectedness of events and objects, shaping the evolution of systems and influencing our decisions and actions. As we continue to explore and model these dependencies, we gain deeper insights into thecomplexity of the world and the ability to make more informed predictions and decisions.。
拉延模调试流程
拉延模调试流程Debugging a delayed anomaly in a software development process can be a frustrating and time-consuming task. It requires thorough investigation, attention to detail, and patience. When a bug or issue causes delays in the development cycle, it can impact the entire project timeline and cause stress for the team responsible for fixing it.在软件开发流程中调试延迟异常可能是一项令人沮丧且耗时的任务。
这需要彻底的调查、注意细节和耐心。
当一个bug或问题导致开发周期延迟时，它会影响整个项目时间表，并为负责修复它的团队带来压力。
One perspective to consider when debugging a delayed anomaly is the importance of communication within the development team. Clear and frequent communication can help identify and resolve issues more quickly. Team members should feel comfortable sharing updates, discussing potential solutions, and asking for help when needed.调试延迟异常时要考虑的一个方面是开发团队内部沟通的重要性。
清晰和频繁的沟通可以帮助更快地识别和解决问题。
福建省2023年春季中医药防治流行性感冒专家共识
Overseas Distributor: China International Book Trading Corporation（P. O. Box 399 Beijing, China. Code No. BM 618）Editorial Office: Fujian University of Traditional Chinese Medicine, Qiuyang Road 1, Minhou Shangjie, Fuzhou, Fujian 350122, P. R. ChinaFUJIAN JOURNAL OF T RADITIONAL CHINESE MEDICINEVol.54 No.3March ， 2023Expert Consensus on Prevention and Treatment of Influenza by Traditional Chinese Medicine in Springof 2023 in Fujian Province ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅LI Qin, CHEN Zhibin （1）Acupuncture of Shu-Mu Acupoint Combination Combined with Lumbar and Abdominal Core Muscle Training in Treating Non-Specific Low Back Pain ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅JIANG Jingjing, LIN Qin, CHEN Shuijin, et al （4）Clinical Efficacy of Modified Maxing Shigan Decoction in Treating Cough Variant Asthma in Childrenwith Phlegm Heat Type ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅CHEN Jingjing, HU Jianyun, GAN Siyu, et al （12）Effect of Acupotomy on Fibrosis of Cervical Posterior Muscle in Rabbits with Cervical Spondylosis Basedon Notch2/TGF-β1 Pathway ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅LIU Hong, ZHANG Zesheng, ZHANG Liangzhi, et al （14）Effect of Taishan Panshi Powder on Uterine Decidua of Abortion Rats Based on Keap1/Nrf2/HO-1 Antioxidant Signaling Pathway ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅LIU Xiaoqian, RAN Tianfu, LIN Chaorui, et al （19）Effect of Chaihu Shugan Powder on Gallbladder Contraction Function in Mice with Cholesterol Gallstone⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅MIN Li, LIN Xuejuan, ZHOU Zhihui, et al （23）Simultaneous Determination of Four Bile Acid Components in Bear Bile Powder by HPLC-ELSD⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅YIN Jinke, XU Wen, LIU Ke, et al （27）Network Pharmacological Study and Experimental Verification of Yunvjian in Treatment of Diabetic Nephropathy⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅SONG Yangyang, WANG Yijin, ZHUANG Shuting, et al （35）Molecular Mechanism of Shengxue Bushui Decoction in Predicting Osteoporosis Based on Network Pharmacology⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅HAN Yidan, ZHANG Xin, ZHUO Junkuan, et al （43）MAIN CONTENTS·专题 ·福建中医药 2023 年 3 月 第 54 卷 第 3 期Fujian Journal of TCM March 2023，54（3）福建省2023年春季中医药防治流行性感冒专家共识李芹1，陈志斌2*（1.福建省中医药学会感染病分会，福建 福州 350025；2.福建省中医药学会呼吸病分会，福建 福州 350003）摘要：进入春季后，福建省罹患发热、咽痛、鼻塞、流涕等症状的患者剧增，流感病毒检测阳性率持续上升，流行性感冒（流感）已进入春季高发期。
高频100V半桥N型氧化锂电容电路驱动MP1907说明书
MP1907100V, 2.5A, High FrequencyHalf-bridge Gate DriverThe Future of Analog IC TechnologyDESCRIPTIONThe MP1907 is a high frequency, 100V half bridge N-channel power MOSFET driver. Its low side and high side driver channels are independently controlled and matched with less than 5ns in time delay. Under-voltage lock-out both high side and low side supplies force their outputs low in case of insufficient supply. Both outputs will remain low until a rising edge on either input is detected. The integrated bootstrap diode reduces external component count. FEATURES•Drives N-channel MOSFET half bridge• 100V V BST voltage range•Input signal overlap protection•On-chip bootstrap diode•Typical 20ns propagation delay time•Less than 5ns gate drive mismatch•Drive 1nF load with 12ns/9ns rise/fall times with 12V VDD•TTL compatible input•Less than 150μA quiescent current•Less than 5μA shutdown current•UVLO for both high side and low side•In 3×3mm QFN10 Packages APPLICATIONS•Battery Powered Hand Tool•Telecom half bridge power supplies •Avionics DC-DC converters•Active-clamp Forward ConvertersAll MPS parts are lead-free and adhere to the RoHS directive. For MPS green status, please visit MPS website under Products, Quality Assurance page.“MPS” and “The Future of Analog IC Technology” are registered trademarks of Monolithic Power Systems, Inc.TYPICAL APPLICATIONORDERING INFORMATIONPart Number*Package Top Marking MP1907GQ QFN10 (3 x 3 mm) ADE * For Tape & Reel, add suffix –Z (e.g. MP1907GQ–Z);PACKAGE REFERENCEABSOLUTE MAXIMUM RATINGS (1) Supply Voltage (V DD).....................-0.3V to +20V SW Voltage (V SW).........................-5.0V to 105V BST Voltage (V BST).......................-0.3V to 110V BST to SW....................................-0.3V to +18V DRVH to SW..............-0.3V to (BST-SW) +0.3V DRVL to VSS......................-0.3V to (V DD+0.3V) All Other Pins..................................-0.3V to 20V Continuous Power Dissipation (T A =+25°C) (2) QFN10 (3x3)..............................................2.5W Junction Temperature...............................150°C Lead Temperature....................................260°C Storage Temperature...............-65°C to +150°C Recommended Operating Conditions (3) Supply Voltage (V DD).................+4.5V to 18V (4) SW Voltage (V SW).........................-1.0V to 100V SW slew rate......................................<50V/nsec Operating Junction Temp. (T J).-40°C to +125°C Thermal Resistance (5)θJA θJCQFN10 (3x3)...........................50......12...°C/W Notes:1) Exceeding these ratings may damage the device.2) The maximum allowable power dissipation is a functionof the maximum junction temperature T J (MAX), thejunction-to-ambient thermal resistance θJA, and theambient temperature T A. The maximum allowablecontinuous power dissipation at any ambienttemperature is calculated by P D (MAX) = (T J (MAX)-T A)/θJA. Exceeding the maximum allowable powerdissipation will cause excessive die temperature, andthe regulator will go into thermal shutdown. Internalthermal shutdown circuitry protects the device frompermanent damage.3) The device is not guaranteed to function outside of itsoperating conditions.4) 4.5V is only a typical value for minimum supply voltage at V DDfalling5) Measured on JESD51-7, 4-layer PCB.ELECTRICAL CHARACTERISTICSV DD = V BST-V SW=12V, V SS=V SW = 0V, V EN=3.3V, No load at DRVH and DRVL, T A= +25°C, unlessotherwise noted.MaxTypUnitsMinParameter Symbol ConditionSupply CurrentVDD Shutdown Current I SHDN V EN=0, 0 1 µAVDD quiescent current I DDQ INL=INH=0 80 100 µAVDD operating current I DDO fsw=500kHz 2.8 3.5 mAFloating driver quiescent current I BSTQ INL=0, INH=0 or 1 55 70 µAFloating driver operating current I BSTO fsw=500kHz 2.1 3 mA1=100V0.05Leakage Current I LK BST=SWμAInputsINL/INH High 2.4 VINL/INH Low 1 VINL/INH Hysteresis 0.6 VINL/INH internal pull-downR IN185 kΩresistanceUnder Voltage ProtectionVDD rising threshold V DDR 4.6 5.0 5.4 VVDD falling threshold V DDF 4.1 4.5 4.9 VV5.4(BST-SW) rising threshold V BSTR 4.65.04.9V4.5(BST-SW) falling threshold V BSTF 4.1EN Input Logic Low 0.7 VEN Input Logic High 1.5 VEN Hysteresis 100 mVV EN=2V, T A=+25°C 10 µAEN Input Current I ENV EN=5V, T A=-10°C to +70°C 35 (6)µAEN internal pull-down resistance R EN 200kΩBootstrap DiodeBootstrap diode VF @ 100uA V F10.55 VBootstrap diode VF @ 100mA V F2 1 V100mA 2.7 ΩBootstrap diode dynamic R R D @Low Side Gate DriverLow level output voltage V OLL I O=100mA 0.15 0.22 V0.6V0.45High level output voltage to rail V OHL I O=-100mAV DRVL=0V, V DD=4.5V (8)0.15 APeak pull-up current(7)I OHLV DRVL=0V, V DD=12V 1.5 A2.5 AV DRVL=0V, V DD=16VV DRVL=V DD=4.5V (8)0.25 APeak pull-down current(7)I OLLAV DRVL=V DD2.5=12V3.5 A=16VV DRVL=V DDFloating Gate DriverLow level output voltage V OLH I O=100mA 0.15 0.22VELECTRICAL CHARACTERISTICS (continued)V DD = V BST -V SW =12V, V SS =V SW = 0V, V EN =3.3V, No load at DRVH and DRVL, T A = +25°C, unless otherwise noted.Parameter Symbol Condition Min Typ Max Units High level output voltage to rail V OHH I O =-100mA 0.45 0.6 VV DRVH =0V , V BST - V SW =5V (9)0.25AV DRVH =0V, V DD =12V1.5A Peak pull-up current (7) I OHH V DRVH =0V, V DD =16V2.5 A V DRVH =V BST - V SW =5V (9)0.65 A V DRVH =V DD =12V 2.5 APeak pull-down current (7)I OLH V DRVH =V DD =16V3.5 A Switching Spec. --- Low Side Gate Driver Turn-off propagation delayINL falling to DRVL falling T DLFF20 ns Turn-on propagation delayINL rising to DRVL rising T DLRR20 ns DRVL rise time C L =1nF 12 ns DRVL fall time C L =1nF 9 ns Switching Spec. --- Floating Gate Driver Turn-off propagation delayINL falling to DRVH falling T DHFF20 ns Turn-on propagation delayINL rising to DRVH rising T DHRR18 ns DRVH rise time C L =1nF 12 ns DRVH fall time C L =1nF 9 ns Switching Spec. --- Matching Floating driver turn-off to low sidedrive turn-onT MON 1 5 nsLow side driver turn-off to floatingdriver turn-onT MOFF1 5 ns Minimum input pulse width thatchanges the outputT PW50(7) ns Bootstrap diode turn-on or turn-offtime T BS 10(7) nsNote:6) Based on characterization data. Not production tested. 7) Guaranteed by design.8) After startup VDD fall to 4.5V9)INLINHFigure 1—Timing DiagramPIN FUNCTIONSPackagePin #Name Description1 VDDSupply input. This pin supplies power to all the internal circuitry. A decoupling capacitor toground must be placed close to this pin to ensure stable and clean supply.2 NC No Connection.3 BSTBootstrap. This is the positive power supply for the internal floating high-side MOSFETdriver. Connect a bypass capacitor between this pin and SW pin.4 DRVH Floating driver output.5 SW Switching node.6 EN On/off Control.7 INH Control signal input for the floating driver.8 INL Control signal input for the low side driver.9 VSS,Exposed PadChip ground. Connect to Exposed pad to VSS for proper thermal operation.10 DRVL Low side driver output.TYPICAL PERFORMANCE CHARACTERISTICSV DD =12V, V SS =V SW = 0V, T A = +25°C, unless otherwise noted.I DDO Operation Current vs.Frequency2004006008001000I BSTO Operation Current vs.Frequency012342004006008001000High Level OutputVoltage vs.TemperatureV O H L ,V O H H (V )Low Level Output Voltage vs. TemperatureV O L L ,V O L H (V )Unde rvoltage LockoutThre shold vs.TemperatureV B S T R ,V D D R (V )Unde rvoltage LockoutHyste re sis vs.TemperatureV B S T H ,V D D H (m V )Propagation Delay vs. Temperature-5050100150Bootstrap Diode I-V Characte ristics0.00010.0010.010.110.50.60.70.80.91FORWARD VOLTAGE (V)F O R W A R D C U R R E N T (A )Quiescent Current vs.VoltageV DD ,V BST (V)-50050100150-50501001504.924.944.964.985.005.025.045.065.085.10-5050100150450460470480490500510-500501001501020304050607080900.000.050.100.150.200.250.300.350.400.450.50V DD =12V, V SS =V SW = 0V, T A = +25°C, unless otherwise noted.V DD(V)Peak Current vs.V DD Voltage012348101214161820P E A K C U R R E N T (A )V DD =12V, V SS =V SW = 0V, T A = +25°C, unless otherwise noted.INH 2V/div.DRVH 5V/div.Turn-on Propagation DelayINL 2V/div.DRVL5V/div.Turn-on Propagation DelayDRVH 5V/div.Drive Rise Time (1nF Load)DRVL5V/div.Drive Rise Time (1nF Load)DRVH5V/div.Drive Fall Time (1nF Load)DRVL5V/div.Drive Fall Time (1nF Load)INL & INH 5V/div.DRVL 10V/div.DRVH 10V/div.Input Signal Overlap ProtectionIINH 2V/div.DRVH 5V/div.Turn-off Protection DelayINL 2V/div.DRVL 5V/div.Turn-off Protection DelayV DD =5V, after startup V DD falls to 5V, V SS =V SW = 0V, T A = +25°C, unless otherwise noted.I DDO Operation Current vs.Frequency FREQUENCY (kHz)FREQUENCY (kHz)I BSTO Operation Current vs.FrequencyHigh Level Output Voltage vs.TemperatureV O H L ,V O H H (V )Low Level Output Voltage vs. TemperatureV O L L ,V O L H (V )Propagation Delay vs. Temperature0.00.20.40.60.81.0020040060080010000.00.20.40.60.8020040060080010000.00.20.40.60.81.01.2-500501001500.000.050.100.150.200.250.300.350.40-5050100150202530354045-50050100150V DD =5V, after startup V DD falls to 5V, V SS =V SW = 0V, T A = +25°C, unless otherwise noted.INL 2V/div.DRVL2V/div.Turn-on Propagation Delay DRVL2V/div.Drive Rise Time (1nF Load)INL2V/div.DRVL 2V/div.Turn-off Propagation Delay Drive Fall Time (1nF Load)DRVL 2V/div.BLOCK DIAGRAMFigure 2—Function Block DiagramOPERATIONSwitch Shoot-through ProtectionThe input signals of INH and INL are controlled independently. Input shoot-through protection circuitry is implemented to prevent shoot-through between the HSFET and LSFET outputs. Only one of the FET drivers can be ON at one time. If both INH and INL are high at the same time, both HSFET and LSFET will be OFF.Under Voltage Lock OutWhen VDD or BST goes below their respective UVLO thresholds, both DRVH and DRVL outputs will go low to turn off both FETs. Once VDD rises above the UVLO threshold, both DRVH and DRVL will stay low until a rising edge is detected on either INH or INL.The truth table in Table 1 details the operation of the HSFET and LSFET under different INH, INL and UVLO conditionsTable1 States of Driver Output under different conditionsENBST-SW VoltageV DD Voltage INHINL DRVHDRVLUVLO LatchstatusOperating Condition0 XX X X Open200k Ωpull downX XX X 0 0 0 0 X X X 1 1 0 0 XX Above UVLO 0 1 0 1 NormalAboveUVLO Above UVLO 1 0 10 NormalNormal Operation Falls belowUVLO Above UVLO X X 0Normal toTrippedAbove UVLO Falls belowUVLO X X 0Normal toTrippedNormal-to-Tripped Transition X Above UVLO 0 or 10 or 10 0 Tripped X Below UVLO X X 00 TrippedWhen UVLO latch istripped. X Above UVLO 0 to 10 to 10 0Tripped, Resetby INL & INH X Above UVLO 1 to 0 1 0 0 to 1Tripped, Resetby INH Falling Below UVLO Above UVLO 1 1 to 00 0Tripped, Resetby INL FallingAbove UVLO Above UVLO 1 1 to 00 to 10 Tripped, Reset by INL FallingBelow UVLO Above UVLO0 to 10 0 to 1Tripped, Resetby INL Below UVLO Above UVLO 0 to 10 0 0Tripped, Resetby INH 1Above UVLOAbove UVLO 0 to 10 to 1Tripped, Resetby INHTripped to NormalTransition Note: x = Don’t Care..APPLICATION INFORMATIONReference Design CircuitsHalf Bridge Motor DriverT In half-bridge converter topology, the MOSFETs are driven alternately with some dead time. Therefore, INH and INL are driven with alternating signals from the PWM controller. The input voltage can be up to 100V in this application.Figure 3—Half-Bridge Motor DriverActive-Clamp Forward ConverterIn active-clamp forward converter topology, the MOSFETs are driven alternately. The high-side MOSFET, along with capacitor C reset, is used to reset the power transformer in a lossless manner.This topology lends itself well to run at duty cycles exceeding 50%. For these reasons, the input voltage may not be able to run at 100V for this application.Figure 4—Active-clamp Forward ConverterNOTICE: The information in this document is subject to change without notice. Please contact MPS for current specifications. Users should warrant and guarantee that third party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not assume any legal responsibility for any said applications.PACKAGE INFORMATIONQFN10 (3 ×3 mm)SIDE VIEW TOP VIEWBOTTOM VIEWPIN 1 ID MARKINGRECOMMENDED LAND PATTERNNOTE:1) ALL DIMENSIONS ARE IN MILLIMETERS.2) EXPOSED PADDLE SIZE DOES NOT INCLUDE MOLD FLASH. 3) LEAD COPLANARITY SHALL BE 0.10 MILLIMETER MAX.4) DRAWING CONFORMS TO JEDEC MO-229, VARIATION VEED-5. 5) DRAWING IS NOT TO SCALE.PIN 1 ID OPTION B PIN 1 ID OPTION A DETAIL APIN 1 ID。
3步设置模式（滞后模式）指南说明书
3 Step Setting Mode[3 step setting mode (hysteresis mode)]In the 3 step setting mode, the set value (P_1 or n_1) and hysteresis (H_1) can be changed. After selecting the channel, set the items on the sub display (set value or hysteresis) with the UP or DOWN button. When changing the set value, follow the(1) Press the SET button once when the item tobe changed is displayed on the sub display.The set value on the sub display (right) willstart flashing.button.When UP and DOWN buttons are pressed and held simultaneously for 1 second or longer, the set value is displayed as [- - -], and the set value will be the same as the current pressure value automatically (snap shot function).Afterwards, it is possible to adjust the value by pressing the UP or DOWN button.(3) Press the SET button to complete the setting.The pressure switch turns on within a set pressure range (from P1L to P1H) during window comparator mode.Set P1L, the lower limit of the switch operation, and P1H, the upper limit of the switch operation and WH1 (hysteresis) following the instructions given above.(When reversed output is selected, the sub display (left) shows [n1L] and [n1H].)∗:Set OUT2 in the same way. (ex. P_2, H_2)∗:Setting of the normal/reverse output switching and hysteresis/window comparator mode switching are performed with the function selection mode [F 1] OUT1 setting and [F 2]OUT2 setting.value Simple Setting Mode(1) After selecting the channel, press the SET button for 1 second or longer, but less than 3 seconds, in measurement mode. [SEt] is displayed on the main display. When the button is released while in the [SEt] display, the current pressure value is displayed on the main display, [P_1] or [n_1] is displayed on the sub display (left),and the set value is displayed on the sub display (right) (Flashing).(2) Change the set value with UP or DOWN button, and press the SET button to set the value. Then, the setting moves to hysteresis setting.(The snap shot function can be used.)(3) Change the set value with UP or DOWN button, and press the SET button to set the value. Then, the setting moves to the delay time of the switch output.(The snap shot function can be used.)(4) Press the UP or DOWN button, the delay time of the switch output can be selected.Delay time setting can prevent the output from chattering.(5) Press the SET button for 2 seconds or longer to complete the setting.∗:If the button is pressed for less than 2 seconds , the setting will moves to the OUT2 setting.In the window comparator mode, set P1L, the lower limit of the switch operation,and P1H, the upper limit of the switch operation, WH1 (hysteresis) and dt1 (delay time) following the instructions given above.(When reversed output is selected, the sub display (left) shows [n1L] and [n1H].)∗:Set OUT2 in the same way.Default settingThe default setting is as follows.If no problem is caused by this setting, keep these settings.[F 0] Differential pressure check mode,(URL ) for more detailed information, or contact SMC.[F 1] Setting of OUT1Same setting as [F 1] OUT1.Other SettingsChannel scan function•Press the UP button for 2 seconds or longer. Channels and the measured pressures will be displayed in order approximately every 2 seconds.•The function can be released by pressing the UP button again for 2 seconds or longer .∗:Channel scan function will remain even when the power supply is turned off.∗:During channel scan, setting is disabled other than channel scan mode release and key lock function setting.Release the channel scan mode when changing settings.Snap shot functionThe current pressure value can be stored to the switch output ON/OFF set point.Peak/bottom value indicationThe max. (min.) pressure when the power is supplied is detected and updated.The value can be displayed on the sub display by pressing DOWN button in measurement mode.Zero-clear functionIn measurement mode, when the UP and DOWN buttons are pressed for 1second or longer simultaneously, the main display shows [- - -], and the reset to zero. The display returns to measurement mode automatically.Key-lock functionTo set each of these functions, refer to the SMC website(URL ) for more detailed information, or contact SMC.MaintenanceHow to reset the product after a power cut or forcible de-energizingThe setting of the product will be retained as it was before a power cut or de-energizing.The output condition is also basically recovered to that before a power cut or de-energizing, but may change depending on the operating environment. Therefore, check the safety of the whole installation before operating the product. If the installation is using accurate control, wait until the product has warmed up (approximately 10 to 15 minutes).Note: Specifications are subject to change without prior notice and any obligation on the part of the manufacturer.© 2018 SMC Corporation All Rights Reserved Specifications/Outline with Dimensions (in mm)Refer to the product catalogue or SMC website (URL ) for more information about the product specifications and outline dimensions.TroubleshootingError indication functionthan above are displayed, please contact SMC.Refer to the SMC website (URL ) for more information about troubleshooting.PS ※※-OMW0006Akihabara UDX 15F, 4-14-1, Sotokanda, Chiyoda-ku, Tokyo 101-0021, JAPAN Phone: +81 3-5207-8249 Fax: +81 3-5298-5362URL Before UseMulti-channel Digital Sensor MonitorPSE20#A SeriesSummary of Product partsPress the SET button once.and 5 sec.∗: If a button operation is not performed for 3 seconds during the setting, the display will flash.(This is to prevent the setting from remaining incomplete if, for instance, an operator were to leave during setting.)∗: 3 step setting mode, simple setting mode and function selection mode settings are reflected each other.SET button between 1and 3 sec.Thank you for purchasing an SMC PSE20#A Series Multi-channel Digital Sensor Monitor.Please read this manual carefully before operating the product and make sure you understand its capabilities and limitations. Please keep this manual handy for future reference.Safety InstructionsThese safety instructions are intended to prevent hazardous situations and/or equipment damage.These instructions indicate the level of potential hazard with the labels of"Caution", "Warning" or "Danger". They are all important notes for safety and must be followed in addition to International standards (ISO/IEC) and other safety regulations.OperatorSafety InstructionsInstallationMounting by panel mount adapterFix the panel mount adapter to the Controller with the set screws M3 x 8L (2 pcs.) as attached.•Panel mount adapter (Model: ZS-26-B)Panel mount adapter + Front protective cover (Model: ZS-26-01)□48 conversion adapter (Model: ZS-26-D)∗: The panel mount adapter can be rotated by 90 degrees for mounting.∗: Front panel of this Controller meets IP65 (if □48 conversion adapter is used, it meets IP40).However, if the panel mount adapter is hold enough with screw and the instrument is not seated correctly, water might enter. Screw shall be tightened 1/4 to 1/2 turns more after touched correctly.(Model: ZS-26-01)Refer to the product catalogue or SMC website (URL )for more information about panel cut-out and mounting hole dimensions.WiringWiring connectionsConnections should be made with the power supply turned off.Use a separate route for the product wiring and any power or high voltage wiring. Otherwise, malfunction may result due to noise.If a commercially available switching power supply is used, be sure to ground the frame ground (FG) terminal. If the switching power supply is connected for use, switching noise will be superimposed and it will not be able to meet the product specifications. In that case, insert a noise filter such as a line noise filter/ferrite between the switching power supplies or change the switching power supply to the series power supply.Attaching the connector to the lead wireSensor wire is stripped as shown in the right figure.(Refer to the table below for correspondence between connectorand electrical wire gauge.)The core of the corresponding colour shown in the following table is put into the pin of the number stamped on the connector for sensor connection to the back.correctly, and part A shown in the figure is pushed by hand and makes temporary connection.Part A centre is pushed straight in using a suitable tool, such as pliers.Re-use cannot be performed once it connects the connector for sensor connection completely. When the connection fails or a pin is miswired,please use a new connector for sensor connection.When the sensor is not connected correctly, [LLL] will be displayed.Cable wire colour is applicable when an SMC sensor with lead wire is used.ConnectorConnecting/DisconnectingWhen connecting the connector,insert it straight onto the pin and lock the connector into the square groove in the housing until connector clicks.When removing the connector, press down the lever with your thumb and pull the connector straight out.Pin No. of the connectorPin No.CH4_OUT1Auto shift input CH3_OUT1CH2_OUT1CH1_OUT2CH1_OUT1DC(-)DC(+)DOWN button once.Function selection modeAfter selecting the channel, inmeasurement mode, press the SET button for 3 seconds or longer (but less than 5 seconds), to display [F 0]. Select to display the function to be changed [F ]. Press and hold the SET button for 2 seconds or longer in function selection mode to return to measurement mode.∗:to configuration of other functions, [- - -] is displayed on the sub display (right).∗:All channel indicators turn on for the setting which is common for all channels.。
Cardiorespiratory abnormalities during epileptic seizures
Review ArticleCardiorespiratory abnormalities during epileptic seizuresSanjeev V.Kothare a ,1,*,Kanwaljit Singh a ,b ,1a Comprehensive Epilepsy Center,Department of Neurology,New York University Langone Medical Center,New York,NY,USA bDepartment of Pediatrics (Neurology),University of Massachusetts Medical School,Worcester,MA,USAA R T I C L E I N F O Article history:Received 31May 2014Received in revised form 17July 2014Accepted 22August 2014Available online 3September 2014Keywords:EpilepsySudden death in epilepsy Cardiac abnormalities Respiratory abnormalities EEGA B S T R A C TSudden unexpected death in epilepsy (SUDEP)is a leading cause of death in young and otherwise healthy patients with epilepsy,and sudden death is at least 20times more common in epilepsy patients as com-pared to patients without epilepsy.A significant proportion of patients with epilepsy experience cardiac and respiratory complications during seizures.These cardiorespiratory complications are suspected to be a significant risk factor for SUDEP.Sleep physicians are increasingly involved in the care of epilepsy patients and a recognition of these changes in relation to seizures while a patient is under their care may improve their awareness of these potentially life-threatening complications that may occur during sleep studies.This paper details these cardiopulmonary changes that take place in relation to epileptic seizures and how these changes may relate to the occurrence of SUDEP.©2014Elsevier B.V.All rights reserved.1.IntroductionEpilepsy affects nearly 1%of the general population [1,2].Epi-lepsy can be classified by seizure type,underlying causes,epilepsy syndromes,and by events taking place during the seizures.Seizure types are broadly classified by whether the source of seizures is lo-calized (focal or partial seizures)or diffusely distributed (generalized seizures)in the brain.Generalized seizures can be further classi-fied according to their effects (tonic–clonic seizures,absence seizures,myoclonic seizures,clonic seizures,tonic seizures,and atonic seizures).Focal or partial seizures can be further classified into simple partial (where only a small part of the lobe is affected and the person does not lose awareness of the surrounding)or complex partial (a larger part of the hemisphere is affected and the person loses con-sciousness and awareness)seizures.Approximately 35%of individuals with epilepsy do not ade-quately respond to medications and are thus considered “medication resistant.”[3]Sudden death is 20–40times more common in people with epilepsy (and especially so in poorly controlled seizures)as compared to people without epilepsy.Sudden unexpected death in epilepsy (SUDEP)is one of the leading causes of death in young and otherwise healthy adults with epilepsy (see below for furtherdetails)[4,5].SUDEP is much less frequently seen in children [6].Epileptiform discharges are often activated by sleep and tend to occur 14times more frequently in non-rapid eye movement (NREM)sleep than in wakefulness [7]and,therefore,sleep stage and sleep/wake state may influence the likelihood for a seizure to occur,with seizures occurring most frequently in NREM sleep,followed by wakefulness,and less likely during rapid eye movement (REM)sleep [8].As such,the deleterious effects of seizures and SUDEP are more likely to occur when patients emerge from the sleep state [9].A significant proportion of patients experience cardiac/or pul-monary dysfunction due to seizures (details follow).These changes may worsen the seizure prognosis/outcome and are believed to be related to,at least in part,the occurrence of SUDEP.This paper details these cardiopulmonary changes that take place in relation to epi-leptic seizures and how these changes may relate to the occurrence of SUDEP.Sleep physicians are often involved in the care of epi-lepsy patients on an increasing frequency and a recognition of these changes in relation to seizures may improve their awareness of these potentially life-threatening complications that occur during sleep studies.2.Respiratory changes during seizuresThe respiratory center [10](Fig.1)consists of four nuclei located in the medulla oblongata and pons of the brainstem.The inspira-tory center (also known as the dorsal respiratory group)is located in the dorsal portion of the medulla oblongata and causes*Corresponding prehensive Epilepsy Center,Department of Neurology,NYU Langone Medical Center,New York,NY,USA.Tel.:+6465580806;fax:+6463857164.E-mail address:Sanjeev.Kothare@ (S.V.Kothare).1Drs.Singh and Kothare contributed equally and are co-first authors./10.1016/j.sleep.2014.08.0051389-9457/©2014Elsevier B.V.All rights reserved.Sleep Medicine 15(2014)1433–1439Contents lists available at ScienceDirectSleep Medicinejournal homepage:/locate/sleepinspiration when stimulated.The expiratory center (ventral respi-ratory group)is located in the anterolateral part of medulla oblongata,anterolateral to the inspiratory center.The pneumo-taxic center is located in the upper part of pons and it controls the rate and pattern of breathing.This center is inhibited by impulses from the ventral respiratory group.The apneustic center is located in the lower part of pons.This center discharges stimulatory im-pulses to the dorsal respiratory group to stimulate inspiration,discharges inhibitory impulses to the ventral respiratory group to inhibit expiration,and receives inhibitory impulses from the pneu-motaxic center and from the lung stretch receptors –thus in turn limiting inspiration.An abnormal input to these respiratory centers during seizure-associated neuronal activation leads to many of the respiratory changes observed with seizures.Respiratory changes occurring in relation to seizures are seen with generalized as well as focal seizures,especially those arising from the mesial temporal structures.These changes have been re-peatedly demonstrated in numerous studies and include central and obstructive apneas,hypoventilation,hypercapnia,and desaturation with acidosis,bradypnea,and tachypnea [11].Most important of these changes is the respiratory depression causing central apnea.Figure 2depicts tachypnea accompanying a tonic seizure followed by postictal central apnea,which could be a mechanism for SUDEP,especially if the patient was in prone position and the apnea was prolonged.Much of the research evaluating the occurrence of respiratory changes in seizures has been done in adults.Bateman et al.(2008)prospectively analyzed the occurrence of ictal hypoxemia in localization-related epilepsy in 56patients with 304seizures [13].They found that ictal hypoxemia was associated with seizure lo-calization (temporal seizures),lateralization (right-sided seizures),male gender,longer seizure duration,and contralateral spread of seizures.Tezer et al.(2009)in a case–control study on two pa-tients reported that apneas were associated in patients with right temporal and paracentral epilepsy [14].Seyal et al.(2010)re-ported a severe and prolonged increase of ictal andpostictalFig.1.Respiratory centers of the brain.Figure sourced from Wikimedia commons and republished under the Creative Commons Attribution 3.0Unported license.(/wiki/File:2327_Respiratory_Centers_of_the_Brain.jpg ).1434S.V.Kothare,K.Singh/Sleep Medicine 15(2014)1433–1439expiratory carbon dioxide (ETCO2)in 187seizures in 33patients [15].Seyal et al.(2012)also evaluated the occurrence of postictal generalized electroencephalography suppression (PGES)(cerebral shutdown)with respiratory abnormalities and found no associa-tion of PGES with postictal central apnea in 102patients with localization-related epilepsy [16](see below for more on PGES).In children,the weight of literature evaluating the occurrence of cardiopulmonary abnormalities with seizures is rather limited,with most studies being of a descriptive nature.Southall et al.(1987)re-ported the occurrence of apnea and hypoxemia in one pediatric patient with complex partial seizures [17].Hewertson et al.(1994)reported the occurrence of hypoxemic apparent life-threatening events in 17infants with partial seizures [18].Hewertson et al.(1996)dem-onstrated the occurrence of hypoxemia/desaturation,apnea,and sinus tachycardia in the majority of 53seizures in 10children [19].O’Regan and Brown (2005)demonstrated the occurrence of tachypnea,apnea,and hypoxemia in 101seizures in 37children [20].Moseley et al.(2010)demonstrated the presence of ictal hypoxemia in general-ized as compared to non-generalized seizures [21].Singh et al.(2013)analyzed 101seizures in 26children and found an association of ictal apnea,bradycardia,and desaturation with younger age,male gender,and symptomatic generalized,left temporal longer-duration sei-zures [22].Pavlova et al.(2013)compared 101seizures in 26children and 55seizures in 22adults and found that ictal apnea and brady-cardia occurred more often in children with PGES occurred more often in adult seizures as compared to children [23].Serotonin and breathing:Serotonin,a neurotransmitter,has been shown to affect brainstem respiratory center excitability.Changes in serotonin levels have been reported in patients with sudden infant death syndrome (SIDS)[24].Mouse models of epilepsy have shown that selective serotonin reuptake inhibitors (SSRIs)(fluoxetine)re-verses respiratory arrest in those animals [25].Subsequently,a retrospective human study showed that medically refractory epi-lepsy patients taking SSRIs had reduced chances of ictal desaturation as compared to patients not on SSRIs [26].The serotonin raphe-hippocampal pathway may be impaired in epilepsy as shown in a rat model of epilepsy [27]and it has been hypothesized that SSRI usage in epilepsy may help by enhancing the excitability of the brain respiratory centers.In summary,several respiratory changes occur during seizures as a result of abnormal neuronal activation of the respiratory center in the brain.The most serious of these changes are those associ-ated with respiratory depression (such as hypoxemias and central apneas)most commonly observed in young men with symptom-atic generalized,contralaterally spreading,left or right temporal,longer-duration seizures.3.Cardiac changes during seizuresIctal autonomic changes can also cause cardiovascular manifes-tations [28].Sympathetic responses are common during most seizures,causing tachycardia,and hypertension.Tonic–clonicFig.2.Tonic seizure with hyperventilation and CO 2washout with central apnea at seizure termination in stage-2sleep.Tonic seizure (solid arrow)with accompanying hyperventilation and CO 2washout (dashed arrow),with a central apnea at the termination of the tonic seizure in stage-2sleep.Results suggest that patient lying prone and presenting with prolonged apnea after a seizure may be at an increased risk for SUDEP [12].This modified montage could be used in the future to further assess the degree of hyper/hypoventilation during seizures.1435S.V.Kothare,K.Singh/Sleep Medicine 15(2014)1433–1439seizures and complex partial seizures of temporal or extratemporal origin often lead to sympathetic activation.However,ictal para-sympathetic activity or sympathetic inhibition can also occur,causing bradycardia and hypotension [29,30].Combinations of sympathet-ic and parasympathetic activation and inhibition may occur simultaneously or sequentially during individual seizures.As with the research studies exploring cardiac changes in association with seizures,most have been done in adults.Figure 3shows how the interaction of sympathetic and parasympathetic centers results in various cardiovascular manifestations during seizures.Moseley et al.(2011)analyzed autonomic changes in 218sei-zures from 76patients and reported the occurrence of ictal sinus tachycardia in 57%of seizures,who were on >3antiepileptic drugs (AEDs)and experienced generalized seizures that had normal brain magnetic resonance imagings (MRIs)[31].Ictal bradycardia was less common,occurring in 2%of seizures and was associated with seizure clustering,and a history of >50seizures/month was reported.Surges et al.(2009)followed 74subclinical seizures (electrographic sei-zures without clinical accompaniment)in 26patients and reported insignificant changes in cardiac function during localized electrographic seizures [32].Nilsen et al.(2010)on the other hand reported that pre-ictal tachycardia was associated with secondary generalization of seizures in 38patients with partial epilepsy [33].Surges et al.(2010)found an association with ictal and postictal tachycardia,postictal heart rate variability,and abnormal QTc short-ening with secondary generalization in 25patients with medically refractory temporal lobe epilepsy [34].In children,Hewertson et al.(1996)demonstrated the occurrence of ictal tachycardia in the ma-jority of 53seizures recorded in 10patients [19].Singh et al.(2013)reported the occurrence of ictal bradycardia in association with younger age,male gender,and symptomatic generalized,left temporal-onset longer-duration seizures [22].Pavlova et al.(2013)reported that ictal bradycardia occurred more commonly in sei-zures in children as compared to adults [23].3.1.Other cardiac changes during seizuresOther cardiac abnormalities that may occur include asystole,re-polarization anomalies (prolonged or shortened QTc interval),and atrial fibrillation.These possibly may arise from seizures arising from the insular cortex.Seizure-induced cardiac asystole has been reported in some studies.Sehuele et al.(2007)assessed 6827patients undergoing long-term video-EEG monitoring and ictal asystole was recorded in 10patients (0.27%),the majority of them (8/10)occurring in temporal lobe epilepsy patients [35].Lanz et al.(2011)retrospectively ana-lyzed the occurrence of cardiac asystole in 2003epilepsy patients undergoing long-term EEG monitoring.Out of 2003patients,only seven patients experienced asystole,all of them occurring in tem-poral lobe epilepsy patients [36].Pathogenic cardiac repolarization has been described in epilepsy patients.Electrocardiography (EKG)indicators of abnormal cardiac repolarization during seizures (such as prolonged or shortened QTc interval)are risk factors for life-threatening tachyarrhythmia and sudden cardiac death.Several studies have indicated the occurrence of peri-ictal QTc interval prolonga-tion in >10%patients of epilepsy [34,37–39].The co-occurrence of ictal hypoxemia has especially been shown to be a risk factor for pro-longed QTc interval [40].Peri-ictal shortening of QTc interval has also been reported,especially in relation to generalized tonic clonic sei-zures (GTCS)(Surges et.al 2010)[41].Peri-ictal changes in heart rate variability have been described in relation to seizures and SUDEP.A recent case report of an epilepsy patient who died of SUDEP de-scribed the occurrence of a marked increase of pre-ictal parasympathetic activity and shortened QTc interval followed by a cluster of GTCS,PGES,asystole,and cardiac arrhythmias [42].Com-plicating this picture,several antiepileptic medications can also lead to QTc interval abnormalities (QTc prolongation:pregabelin,lamotrigine,valproate,stiripentol,and ketogenic diet;QTc shorten-ing:rufinamide,primidone,phenytoin,and carbamazepine)[43].Fig.3.Interaction of sympathetic or parasympathetic systems causing cardiovascular manifestations during seizures.1436S.V.Kothare,K.Singh/Sleep Medicine 15(2014)1433–1439In summary,several cardiac changes occur during seizures as a result of ictal autonomic dysfunction.Sympathetic responses(causing tachycardia and hypertension)are more common as compared to parasympathetic responses(causing bradycardia and hypoten-sion).Younger age,male gender,multiple AEDs,and generalized, temporal lobe,and longer-duration seizures predispose patients to experiencing these cardiac alterations.3.2.Genetic basis of cardiopulmonary changes in associationwith seizuresA few studies have shown that mutations in genes could lead to predisposition to cardiopulmonary complications during sei-zures.For example,in mice models and in a human cohort study, mutations in potassium channel-coding genes(KCNQ1,KCNH2,and SCN5A)have been found to predispose a severe form of pro-longed QTc interval,thus potentially predisposing the subjects to sudden death in epilepsy.KCNQ1gene encodes for the cardiac KvLQT1delayed rectifier channel.In mice,this channel is present in neurons of certain regions of the forebrain and brainstem.Sei-zures in this model might predispose cardiac arrhythmia[44]. Another study in mice has shown that mutations in Kv1.1potas-sium channel-coding genes predisposed mice to early onset of epilepsy,fivefold increase in AV conduction blocks,bradycardia and premature ventricular contraction,and sudden death[45].3.3.Sudden unexpected death in epilepsySUDEP refers to the sudden unexpected death of a seemingly healthy individual with epilepsy.SUDEP is defined as a“sudden,un-expected,witnessed or unwitnessed,non-traumatic and non-drowning death,occurring in benign circumstances,in an individual with epilepsy,with or without evidence for a seizure and exclud-ing documented status epilepticus(seizure duration>30minutes or seizures without recovery in between)in which postmortem ex-amination does not reveal a cause of death.”SUDEP is the most common cause of death that can be directly attributable to epilep-sy[46].SUDEP most often occurs at night,possibly during sleep[47]. The incidence of SUDEP is1in1000with epilepsy(general popu-lation1in40,000),and1in100–200with refractory epilepsy,but is four times more likely in adults as compared to children[48].While potential mechanisms have been postulated,a high seizure frequency remains the biggest conclusively substantiated under-lying risk factor.Cardiac arrhythmias[49],respiratory abnormalities [50],or a combination[9,51,52]have been postulated in the causation of SUDEP[53].The role of breathing in the mechanisms of SUDEP has been understudied and is probably underestimated.Studies have shown age to have a strong effect on the rate and severity of respiratory abnormalities with obstructive sleep apnea syndrome being more common in older individuals[7,54],and more severe after the age of50[7].The peak age for SUDEP in adults, however,is between20and40years[55].Given the increased in-cidence of obstructive sleep abnormalities with age,we believe that the seizure-related breathing disturbances also differ by age group. The interaction between seizures,sleep,and cardiopulmonary func-tion is an important,yet understudied area of investigation and is a growing area of research in epilepsy.A better understanding of mechanisms and association of these cardiorespiratory abnormali-ties in seizures may offer better insights to causes and,potentially, a better prediction of patients who might experience SUDEP.A recent study[56]collected data from four case–control studies to increase the power to identify risk factors for SUDEP[57–60]. The following risk factors for SUDEP(in289cases and958living controls)with epilepsy were identified:1)Multiple(more than three)GTCS per year,2)multiple AEDs,3)epilepsy duration,4) childhood onset of epilepsy,5)male gender,and6)symptomatic epilepsy.The risk for SUDEP was37times greater in persons with early onset of epilepsy(younger than age16)and eight times in those whose epilepsy began at age16or older compared to healthy controls.Although the peak incidence of SUDEP is between ages 20and40years,the study implied that it is those patients who had early onset of epilepsy are more susceptible to developing SUDEP later on in their life.A reanalysis of the data used in the abovementioned study showed that of these six risk factors,the effect of allfive tended to decrease once the effect of GTCS frequen-cy was taken into account,meaning that GTCS frequency remained the most important risk factor for SUDEP[61].Another recently published,large,multicenter study(the Mechanisms of Cardiore-spiratory Arrests in Epilepsy Monitoring Units(MORTEMUS)study) performed a comprehensive evaluation of cardiorespiratory arrests in29epilepsy patients who died subsequent to an admission to epilepsy monitoring units[62].This study showed that patients who had subsequently died due to cardiorespiratory arrest had an early postictal tachypnea induced by a generalized tonic clonic seizure followed within3min by transient or terminal cardiopul-monary dysfunction(apnea and/or bradycardia culminating in asystole).Where transient,this dysfunction later recurred with ter-minal apnea and cardiac arrest within11min of the end of seizure.There is not a single mechanism to explain the mechanisms of SUDEP.Potential mechanisms may include:1)cardiac arrhyth-mias(possibly related to the cardiovascular effects of insular cortex), 2)ventilatory impairment,prolonged apneas,or oxyhemoglobin desaturations triggered by seizures,3)impaired righting re-sponses leading to suffocation(most patients with SUDEP have been found to be in the prone position),4)autonomic instability during or after a seizure,and/or5)postictal serotonin(5-HT)neuronal dys-function causing depression of breathing,impaired arousal,and repositioning reflexes.Cerebral shutdown is a yet another putative mechanism causing SUDEP that has been put forward.PGES(Fig.4),which is a hall-mark of cerebral shutdown,is defined as the immediate postictal (within30s),generalized absence of electroencephalographic ac-tivity>10μV in amplitude,allowing for muscle,movement, breathing,and electrode artifacts[63].Prolonged PGES may be an independent risk marker for SUDEP.Lhatoo et al.(2010)showed that PGES>50s increased the risk for SUDEP by a significant margin,and each1-s increase in PGES duration increased the risk for PGES by 1.7%[63].It is however not clear whether PGES is an indirect or direct marker of cerebral dysregulation.A recent study examined the relationship between sympathetic and parasympathetic changes(as measured by electrodermal activity and heart rate variability)and PGES in seizure patients,and found that the increase in electro-dermal activity response amplitude and decreased parasympathetic modulated power of heart rate variability were directly correlated to prolonged PGES[64].Therefore,it may be presumed that PGES may serve as a marker of postictal autonomic dysregulation.In another study,13patients with PGES and GTCS were compared to 12random controls,and it was found that patients with PGES were more likely to be motionless postictally and were more likely to have resuscitative interventions(such as suction,oxygen administra-tion,and position altered)performed.PGES in these patients may be a sign of deeper coma,delayed arousal,and a predisposition to SUDEP[65].Another study compared secondarily generalized con-vulsive seizures with and without PGES,and found that oxygen desaturation duration and extent as well as peak end-tidal CO2el-evation was greater in patients with PGES[16].A recent study however failed tofind an association between PGES and SUDEP, where they found no significant differences in the presence or du-ration of PGES between17SUDEP cases and matched controls[66]. Several studies have shown that PGES occurs less frequently in pe-diatric[23,67]as compared to adult seizures[63].This association of age with PGES may indicate that a developing pediatric brain is1437S.V.Kothare,K.Singh/Sleep Medicine15(2014)1433–1439less likely to manifest PGES than the mature adult brain,and it may also indicate that to the extent that PGES plays a role in causing SUDEP,it may not be due to “cerebral exhaustion”but due to the existence of a possible “controlling network”inside the brain stem that is activated by seizure activation [23,66].4.ConclusionIn this paper,we have detailed the type of cardiorespiratory changes that take place in patients with epilepsy in relation to sei-zures,and how these changes may relate to an increased risk of sudden death in epilepsy.When indicated,patients undergoing sleep studies in patients with epilepsy should have additional EEG elec-trodes to localize and lateralize seizures,and assess the effect of these seizures on cardiorespiratory functions,including oxygenation and end-tidal CO 2.Similarly,in patients undergoing video-EEG moni-toring in the epilepsy telemetry unit,additional channels may be supplemented to assess their oxygenation and respiratory effort during and after seizures,especially when these patients experi-ence apneas,or prolonged desaturation during or after their seizures.In those patients who have obstructive apneas,appropriate inter-ventions such as the use of continuous positive airway pressure (CPAP)could be carried out and those who have significant desaturations or central apnea could benefit from a trial of SSRIs.These patients also need more careful monitoring such as the in-sertion of pacemaker for any possible cardiac asystole,home monitoring in bed,checking for supine position,and maintaining an elevated head position during sleep.4.1.Practice points for the clinician1.Sleep physicians need to be aware of potential cardiopulmo-nary complications in their epilepsy patients when they come for sleep studies.2.Certain types of patients are potentially more likely to experi-ence these cardiopulmonary complications –those of youngerage,of the male gender,on multiple AEDs,and who have longer-duration,temporal lobe,symptomatic generalized seizures.3.These patients may need additional monitoring,such as addi-tional EEG electrodes,a more careful assessment of their O 2and end-tidal CO 2levels,and EKG monitoring.Conflict of interestThe ICMJE Uniform Disclosure Form for Potential Conflicts of In-terest associated with this article can be viewed by clicking on the following link:/10.1016/j.sleep.2014.08.005.References[1]ILAE.Proposal for revised clinical and electroencephalographic classi-fication of epileptic seizures.From the commission on classification and terminology of the international league against epilepsy.Epilepsia 1981;22(4):489–501.[2]ILAE.Proposal for revised classification of epilepsies and epileptic syndromes.Commission on classification and 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异步通信的英语
异步通信的英语Asynchronous communication, also known as async communication, is a method of communication where the parties involved do not need to be present at the same time.This type of communication allows for flexibility and convenience, as individuals can send and receive messages at their own pace without the need for immediate responses. 。
One of the key benefits of asynchronous communication is that it allows for increased productivity and efficiency. With async communication, individuals can focus on their tasks without interruptions, as they can respond to messages when it is convenient for them. This can lead to better time management and improved workflow,as individuals can prioritize their work and respond to messages when they have the time and mental capacity to do so.Another advantage of asynchronous communication is that it allows for better collaboration among team members, especially in remote or distributed teams. With async communication tools such as email, instant messaging, and project management platforms, team members can easily share information, updates, and feedback without the need for real-time communication. This can lead to more thoughtful and well-thought-out responses, as individuals have the time to consider their messages before sending them.Additionally, async communication can help reduce misunderstandings and miscommunications. With asynchronous communication, individuals have the time to carefully craft their messages, ensuring that they are clear, concise, and well-thought-out. This can help prevent confusion and ambiguity, as individuals can take the time to clarify their points and provide context when needed.Furthermore, asynchronous communication can improve work-life balance, as individuals can set boundaries and control when they engage with work-related communication. This can help reduce stress and burnout, as individuals can disconnect from work when needed and focus on other aspects of their lives.In conclusion, asynchronous communication offers numerous benefits for individuals and teams, including increased productivity, better collaboration, reduced misunderstandings, and improved work-life balance. By leveraging async communication tools and practices, individuals and organizations can enhance their communication processes and achieve greater efficiency and effectiveness in their work.。
电子在信息工程专业术语
Semiconductor 半导体synchronous 同步的、同时asynchronous异步的boost 升压buck 降压PWM 脉冲宽度调制PFM 脉冲频率调制Inverting Switching反相开关monolithic单片机internal内部的external外部的compensate补偿、赔偿comparator比较器oscillator振荡器active current有功电流driver 驱动器current电流incorporate合并、构成Inverting 颠倒、反相的minimum 最低的、最小的Component元件Refer to 参考Feature特点、特征Operation操作、工作Standby待机，引申为静态 Adjustable可调节的Frequency Operation 工作频率Precision 精密Reference参考Pb−Free Packages 无铅封装Emitter发射器active transistor.有源晶体管Ipk sense 电流检测Switch Emitter开关管发射机Timing Capacitor定时器电容Driver Collector驱动管集电极Inverting Input反向输入Maximum ratings 最大额定值rating 额定值、级别、等级Rating等级、Symbol符号Value数值Unit单位Power Dissipation 功耗Thermal Characteristics热特性Thermal Resistance热电阻exceed超过，胜过Recommended 推荐exposure 暴露reliability可靠性.power dissipation功耗prefix 前缀Charge Current 充电电流IchgDischarge Current 放电电流IdischgCurrent Limit Sense Voltage 电流限制检测电压Saturation Voltage饱和电压, DC Current Gain直流电流增益Collector Off−State Current 集电极处于关断状态时的电流Threshold Voltage阈值电压Input Bias Current输入偏置电流Supply Current 电源电流duty cycle占空比junction temperature结温是电子设备半导体的实际温度。
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Acknowledgement
Asy nchronous ModuleBiblioteka Acknowledgement
Asy nchronous Module
Acknowledgement
Fig. 1: Handshake based communication between modules. A module can actually be of any complexity.
Abstract
The purpose of this paper is to formally specify a flow devoted to the design of Differential Power Analysis (DPA) resistant QDI asynchronous circuits. The paper first proposes a formal modeling of the electrical signature of QDI asynchronous circuits. The DPA is then applied to the formal model in order to identify the source of leakage of this type of circuits. Finally, a complete design flow is specified to minimize the information leakage. The relevancy and efficiency of the approach is demonstrated using the design of an AES crypto-processor.
1
Proceedings of the Design, Automation and Test in Europe Conference and Exhibition (DATE’05) 1530-1591/05 $ 20.00 IEEE
There are two main classes of handshaking protocols: twophase protocol and four-phase protocols. In this work, only
the four-phase protocol is considered and described.
38031 Grenoble Cedex e-mail: fraidy.bouesse@imag.fr
Fabien Germain
SGDN/DCSSI 51 bd. De la Tour Maubourg
75700 Paris Cedex07 e-mail: fabien.germain@sgdn.pm.gouv.fr
significantly improve the DPA resistance. However this study has also pointed out the limits of this design approach methodology by showing some residual sources of leakage.
The paper is organized as follows. Section II presents the asynchronous properties that are used to design a DPA resistant chip, especially N-rail quasi delay insensitive asynchronous logic together with four-phase protocol. Section III investigates the electrical current model of this type of circuit and then section IV recalls the DPA attack skill by applying the attack on the model. Validations are presented in section V. The improvement of the design flow and results are reported in Section VI. The paper is concluded by giving some design perspectives in section VII.
I. Introduction and motivations
Since the discovery of the Power Analysis attacks such as Single Power Analysis (SPA) and Differential Power Analysis (DPA), asynchronous logic has been presented as a new alternative design solution against side channels attacks.
methods.
Additionally to their absence of clock signal which demonstrates the practical way to eliminate a global synchronization signal, asynchronous logic is well-known for its ability to decreasing the consumption and to shape circuits’ current. [2][3][4] demonstrate how 1-of-n encoded speed-independent circuits improve security by eliminating data dependent power consumption. Symmetry in data communication and data processing, persistent storage, timing information leakage and propagating alarm signals (to defend chip against fault induction) are design aspects addressed by those papers for increasing chip resistance. The countermeasures that used the Self-timed circuit properties are all focused on balancing the operation through special DI Coding scheme. The concrete results of these approaches which illustrates how is Quasi Delay Insensitive asynchronous logic factor effective for resisting against DPA has been presented in [5]. By investigating and analyzing three different QDI DES architectures and design styles, it is demonstrated how the properties of 1-of-N encoded data and four-phase handshake protocol
II. Asynchronous logic and DPA
Asynchronous circuits represent a class of circuits which are not controlled by a global clock but by the data themselves. In fact, an asynchronous circuit is composed of individual modules which communicate to each other by means of point-to-point communication channels. Therefore, a given module becomes active when it senses the presence of incoming data. It then computes them and sends the result to the output channels. Communications through channels are governed by a protocol which requires a bi-directional signalling between senders and receivers (request and acknowledge). They are called Handshaking protocols [6] which are the basis of the sequencing rules of asynchronous circuits.
In fact, Power Analysis attacks with DPA firstly introduced in 1998 by Paul Kocher [1] use the weakness of chip hardware implementations and software running on cryptographic devices (particularly smart card), to reveal the chip’s confidential information. Secret keys are removed from device by observing and monitoring the electrical activity of a device and performing advanced statistical