2SC2245中文资料
2SC3420中文资料
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)2SC3420Strobe Flash ApplicationsAudio Power Amplifier Applications• High DC current gain : h FE = 140 to 600 (V CE = 2 V, I C = 0.5 A): h FE = 70 (min) (V CE = 2 V, I C = 4 A)• Low saturation voltage: V CE (sat) = 1.0 V (max) (I C = 4 A, I B = 0.1 A) • High collector power dissipation: P C = 10 W (Tc = 25°C),P C = 1.5 W (Ta = 25°C)Absolute Maximum Ratings (Tc = 25°C)Characteristics Symbol Rating UnitCollector-base voltage V CBO 50 V V CES 40 Collector-emitter voltage V CEO 20VEmitter-base voltageV EBO8 V DC I C5 Collector currentPulse(Note 1)I CP 8ABase current I B 1 A Ta = 25°C 1.5 Collector powerdissipationTc = 25°CP C 10WJunction temperature T j 150 °C Storage temperature rangeT stg−55 to 150°CNote 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max)Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and thesignificant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Unit: mmJEDEC ― JEITA―TOSHIBA 2-8H1AWeight: 0.82 g (typ.)Electrical Characteristics (Tc = 25°C)Characteristics Symbol TestCondition MinTyp.Max UnitCollector cut-off current I CBO V CB = 40 V, I E = 0 ―― 100nAEmitter cut-off current I EBO V EB = 8 V, I C = 0 ―― 100nA Collector-emitter breakdown voltage V (BR) CEO I C = 10 mA, I B = 0 20 ―― Vh FE (1) (Note 3)V CE = 2 V, I C = 0.5 A 140 ― 600DC current gainh FE (2)V CE = 2 V, I C = 4 A 70 ――Collector-emitter saturation voltage V CE (sat)I C = 4 A, I B = 0.1 A ―― 1.0 V Base-emitter voltage V BE V CE = 2 V, I C = 4 A ―― 1.5 V Transition frequency f T V CE = 2 V, I C = 0.5 A ― 100 ― MHz Collector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz ― 40 ― pF Note 3: h FE (1) classification Y: 140 to 240, GR: 200 to 400, BL: 300 to 600MarkingPart No. (or abbreviation code)lead (Pb)-free package orlead (Pb)-free finish.C o l l e c t o r -e m i t t e r s a t u r a t i on v o l t a g e V C E (s a t ) (V )Co l l ec t o r c u r r e n t I C(A )Collector-emitter voltage V CE (V)I C – V CEC ol le c t o r c u r r e n tI C (A )Base-emitter voltage V BE (V)I C – V BEC o l l ec t o r c u r r e n t IC (A )Collector current I C (A)h FE – ICD C c u rr en t ga i n h F ECollector-emitter voltageV CE(V)Safe Operating AreaCollector current I C (A)V CE (sat) – I C0.030.1 1 10 30.3 0.01RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。
Z23S2445M01中文资料(AEROVOX)中文数据手册「EasyDatasheet - 矽搜」
•单和双额定值 - 双额定值
在SuperMet仅
所有SuperMet和ZEMAX电容TM集成•
60000小时使用寿命.
UL认证压敏灭弧删除•
电容稳定性±整个人生3％
电容器从电路在生命尽头.
•自清除金属化聚丙烯薄膜.
• 专利压力灭弧符合UL810
每个电容器填充有环氧化Soybeanoil
要求.
电介液.大豆油已被证明可靠性
所有AEROMET II电容都可以用时间和成本节约
EIA RS-186-3E状态测试要求.
AeroMount系统.触点厂家触点厂家对于需要reycled了解详细信息.
认证证书
EIA RS-186-2E湿度测试要求（TropiCAL条件）.
• UL文件号E51176
• CSA文件号058450
• VDE认证可用
电气特性
• 温度范围：-40〜+ 70℃.源自• 电容范围3至80μF.
• 电容公差±10％.
• 电压范围240至480 VAC,60赫兹.
• 损耗因数0.1％以下
@ 60赫兹和25℃.
• 绝缘电阻千M
●μF.
•耐电压.
• 期限至足月1.75×WVAC
• 期限到案2×WVAC + 1KVAC
应用
• 窗式空调 • 单元式空调 • 电动汽车 • 风扇与鼓风机 • Pumps • 洗衣房设备 • 除湿机
注入
P = Supernol（M系列） S = SuperSoy（Z系列）
电压编码 电压第一个两位数
24 = 240 V交流 33 = 330 V交流 37 = 370 V交流 44 = 440 V交流 48 = 480 V交流 60 = 600 Vac
2SC3545中文资料
1.6
1.4
1.2
1.0
0.9
0.8
0.5
REACTANCE COMPONENT
( ) ––R–– ZO
0.2
S11e
0.4
0.6
0.8
0.2 GHz
1.0
0.8 1.0
IC = 5 mA IC = 10 mA
1.8 2.0
3.0
4.0
5.0
10 20 50
0.2 GHz
S22e 1.6 GHz
10 20
2
CC.rb'b-Collector to Base Time Constant-ps
Gmax-Maximum Available Gain-dB |S21e|2-Insertion Gain-dB
Cre-Feed-back Capacitance-pF
2SC3545
TYPICAL DEVICE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 3
元器件交易网
S-PARAMETER
S11e, S22e-FREQUENCY CONDITION VCE = 10 V, 200 MHz Step
0.6 0.8
0.7
0.404.06 0.5
0.09
0.007.413300.008.42
0.6
0.41 120
0.7
0.10 0.40
S21
114.1 92.9 81.7 70.2 62.8 54.4 47.9 40.9
S21
104.9 87.4 78.0 67.2 60.1 52.5 46.3 39.5
S12
0.037 0.055 0.077 0.098 0.108 0.125 0.148 0.160
2SC3735B35中文资料(RENESAS)中文数据手册「EasyDatasheet - 矽搜」
t （当T , I = I = 10 mA)
t
见 测试电路
t
hFE 分类
打标
h
B33 40至80
B34 60至120
B35 100至200
封装图（单位： mm）
0.4
0.95 2.9±0.2
0.95
0.3
2.8±0.2
1.5
0.65
2
3
1
0.4
打标
0.16 1.1至1.4
1.发射器 2.基 3.收藏家
防止它们之间物理损伤一个故障情况下所造成火灾可能性,和伤害或损害 瑞萨电子产品,如安全设计硬件和软件,包括但不限于冗余度,防火和防故障,老化退化或其他任何适当措施,适当治 疗.因为单独微机软件评价是非常困难,请评价您所生产最终产品或系统安全性.
10. 请联系瑞萨电子销售处细节,以环境问题,如环境 每个瑞萨电子产品兼容性.请使用瑞萨电子产品符合所有适用 调控受控物质列入或使用,包括但不限于欧盟RoHS法规 指示.瑞萨电子承担对于因您不遵守适用法律法规而导致损害或损失不承担任何责任.
与标记 r表示主要修改点 .
现场：修订部分可以通过在 PDF文件中复制一个 "R",并在 "查找内容 "指定它可以很容易地搜索 .
1985, 2008
芯片中文手册,看全文,戳
开关时间测试电路
产量
INPUT
t 交换
INPUT
产量
产量
INPUT
t 交换
INPUT
产量
产量
INPUT
t 交换
芯片中文手册,看全文,戳
数据表
高速开关
NPN硅外延晶体管
硅晶体管
2SC2295中文资料
0.4 –0.05
Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
– 0.6 – 0.5
–120 – 0.4 – 0.3 – 0.2 – 0.1 0 0 20 40 60 80 100
Reverse transfer conductance gre (mS)
Forward transfer conductance
gfe (mS)
Output conductance goe (mS)
Base to emitter voltage VBE (V)
Collector current IC (mA)
hFE — IC
240 VCE=10V 400 350 300 250 200 150 100 50 0 0.1 0 – 0.1 – 0.3
fT — I E
60
Zrb — IE
Reverse transfer impedance Zrb (Ω)
(Ta=25˚C)
Symbol ICBO hFE* fT NF Zrb Cre Conditions VCB = 10V, IE = 0 VCB = 10V, IE = –1mA VCB = 10V, IE = –1mA, f = 200MHz VCB = 10V, IE = –1mA, f = 5MHz VCB = 10V, IE = –1mA, f = 2MHz VCE = 10V, IC = 1mA, f = 10.7MHz 70 150 250 2.8 22 0.9 4 50 1.5 min typ max 0.1 220 MHz dB Ω pF Unit µA
2SC4242中文资料
Collector current IC[A]
Collector-Emitter voltage VCE[V] Safe Operating Area
Collector current IC[A] Switching Time
2
D.C. current gain hFE
Collector current IC[A] DC Current Gain
Collector current IC[A] Base and Collector Saturation Voltage
Switching time ton, tstg, tf [µs]
Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(Sat) VBE(Sat) ton tstg tf
Test Conditions ICBO = 1mA ICEO = 0.2A IEBO = 1mA VCBO = 450V VEBO = 10V IC = 4A, VCE = 5V IC = 4A, IB = 800mA
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
Ratings 450 400 10 7 2 40
+150 -55 to +150
Unit V V V A A W °C °C
Electrical characteristics (Tc =25°C unless otherwise specified)
IC = 5A, IB1 = 1A IB2 = -2A, RL = 30 ohm Pw = 20µs Dutristics
Item Thermal resistance
Symbol Rth(j-c)
LTC2245-16 16 位、5 MSPS、低功耗、并行 16 位 ADC 数据手册说明书
产品特性单电源供电：1.8V 或3V 低功耗：32mW （电源电压1.8V ）54mW （电源电压3.0V ）信噪比(SNR)：75dBFS(5MHz Fin 、10MSPS)无杂散动态范围(SFDR)：95dBFs(5MHz Fin 、10MSPS)采样频率可以低至1MSPS CMOS 输出并口配置模式32引脚（5mm ×5mm ）QFN 封装支持内置或外置参考电压源应用通信便携式医学成像多通道数据采集产品聚焦1.管脚兼容ADI 公司LTC2245系列2.单电源供电，支持1.8V 或3V 两档电源电压3.CMOS 输出4.并口配置支持1.8V~3.6V 电平功能框图图 1.功能框图修订历史（内部）版本时间位置修订内容V1.02021/11/09手册初稿目录产品特性 (1)应用 (1)产品聚焦 (1)功能框图 (1)修订历史（内部） (2)目录 (3)概述 (4)技术规格 (5)ADC直流规格 (5)ADC交流规格 (6)数字规格 (7)时序规格 (7)时序图 (8)绝对最大额定值 (9)热特性 (9)ESD警告 (9)引脚配置和功能描述 (10)典型工作特性 (12)等效电路 (13)应用信息 (13)转换器工作 (13)模拟输入 (13)输入滤波 (14)变压器耦合电路 (14)放大器电路 (15)参考电平 (15)REFH，REFL (15)时钟输入 (15)输出数据格式 (16)输出停用 (16)睡眠模式 (16)应用信息 (17)设计指南 (17)外形尺寸 (18)名词对照表 (19)概述ZYL2245是一款单通道、14位10MSPS低噪声模数转换器（ADC），旨在支持需要高性能、低噪声、低成本、小尺寸、多功能的数据采集和通信应用。
ZYL2245支持3V或1.8V两种电源模式。
这款双通道ADC内核采用差分、多级流水线结构，集成了输出纠错逻辑，集成内置基准源，支持引入外置基准源作为ADC的基准电压。
2SK2225-E中文资料
Waveforms 90%
10%
90% td(on)
90% td(off) tf
tr
Rev.2.00 Sep 07, 2005 page 5 of 6
元器件交易网
2SK2225
Package Dimensions
JEITA Package Code
SC-93
RENESAS Code
0.02 0.01
1 sh p ot
D=
PW T
PW T
uls
e
0.01 10 µ
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit Vin Monitor D.U.T. RL VDD = 30 V Vout Monitor Vin Vout Vin 10 V 50 Ω 10% 10%
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 — — 2.0 — 0.45 — — — — — — — — — Typ — — — — 9 0.75 990 125 60 17 50 150 50 0.9 1750 Max — ±1 500 4.0 12 — — — — — — — — — — Unit V µA µA V Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS =1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 1 A, VGS = 15 V*3 ID = 1 A, VDS = 20 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, VGS = 10 V, RL = 30 Ω
2SC5124资料
External Dimensions FM100(TO3PF)
0.8±0.2 15.6±0.2 5.5±0.2 3.45 ±0.2 5.5 ø3.3±0.2 1.6
23.0±0.3
9.5±0.2
a b
V V MHz pF
19.1 16.2
1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 4.4 1.5 0.65 +0.2 -0.1
t stg •t f – I C Characteristics (Typical)
10
θ j-a – t Characteristics
t o n• t s tg • t f (µ s)
125˚C 25˚C
5 V C C 200V I C :I B 1 :–I B 2 =5:1:2 1 0.5 tf 0.1 0.2
t s tg
10
–55˚C
5 3 00.5
1
5
10
0.5
1 Collector Current I C (A)
5
10
Collector Current I C (A)
Safe Operating Area (Single Pulse)
30 30
Reverse Bias Safe Operating Area
Ambient Temperature Ta(˚C)
3.0
10 0µ s
W ith In fin ite he at si nk
129
0.1 5 10 50 100 500 1000 Collector-Emitter Voltage V C E (V)
0.1 50
2SC2925S资料
Unit: mm
4.0±0.2
M Di ain sc te on na tin nc ue e/ d
0.7±0.1
• High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)
750
mW
or m
1 000 0.15 11
0.7
A
2.3±0.2
IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0
Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)
50
15
Collector-base cutoff current (Emitter open)
*
VCB = 20 V, IE = 0 VCE = 20 V, IB = 0
si
Collector-emitter cutoff current (Base open) Forward current transfer ratio
Unit V V V µA µA V pF
Publication date: March 2003
SJC00124BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2925
PC Ta
1.0
120 Ta = 25°C
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC2545ETZ-E中文资料
2SC2545, 2SC2546, 2SC2547Silicon NPN EpitaxialREJ03G0699-0300(Previous ADE-208-1067A)Rev.3.00Aug.10.2005 ApplicationLow frequency low noise amplifierOutline1. Emitter2. Collector3. Base321Absolute Maximum Ratings(Ta = 25°C)2SC2547Unit2SC2545Item Symbol2SC2546Collector to base voltage V CBO 60 90 120 VCollector to emitter voltage V CEO 60 90 120 VEmitter to base voltage V EBO 5 5 5 VCollector current I C 100 100 100 mAEmitter current I E –100 –100 –100 mACollector power dissipation P C 400 400 400 mWJunction temperature Tj 150 150 150 °CStorage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °CElectrical Characteristics(Ta = 25°C)2SC25452SC25462SC2547Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdownvoltageV(BR)CBO60 — — 90 — — 120 — — V I C = 10 µA, I E = 0Collector to emitter breakdown voltage V(BR)CEO60 — — 90 — — 120 — — V I C = 1 mA,R BE = ∞Emitter to base breakdownvoltageV(BR)EBO 5 — — 5 — — 5 — — V I E = 10 µA, I C = 0 Collector cutoff current I CBO— — 0.1 — — 0.1 — — 0.1 µA V CB = 50 V, I E = 0 Emitter cutoff current I EBO— — 0.1 — — 0.1 — — 0.1 µA V EB = 2 V, I C = 0 DC current transfer ratio h FE*1 250 — 1200600 — 1200250 — 800 V CE = 12 V,I C = 2 mACollector to emitter saturation voltage V CE(sat) — — 0.2 — — 0.2 — — 0.2 V I C = 10 mA,I B = 1 mABase to emitter voltage V BE— 0.6 — — 0.6 — — 0.6 — V V CE = 12 V,I C = 2 mAGain bandwidth product f T— 90 — — 90 — — 90 — MHz V CE = 12 V,I C = 2 mA Collectoroutputcapacitance Cob — 3.0 — — 3.0 — — 3.0 — pF V CB = 10 V, I E = 0,f = 1 MHzNoise voltage referred input e n— 0.5 — — 0.5 — — 0.5 — nV/√Hz V CE = 6V,I C = 10 mA,f = 1 kHz,R g = 0, ∆f = 1HzNote: 1. The 2SC2545 and 2SC2547 are grouped by h FE as follows.DEF 2SC2545 — 400 to 800 600 to 12002SC2547 250 to 500 400 to 800 —Main CharacteristicsAmbient Temperature Ta (°C)Collector to Emitter Voltage V 48Collector to Emitter Voltage V CE (V)121620101520255 µA I B = 000.20.121.00.51050.20.4Base to Emitter Voltage V C o l l e c t o r C u r r e n t I C (m A )0.6DC Current Transfer Ratio vs.Collector CurrentV CE = 12 V Pulse1.00.5g e V C E (s a t ) (V )Collector to Emitter Saturation Voltagevs. Collector CurrentI C1.02510Collector to Base Voltage V CB (V)Collector Output Capacitance vs.2050I E = 0f = 1 MHz0.010.10.030.31.0310Collector Current I C (mA)S i g n a l S o u r c e R e s i s t a n c e R g (k Ω)NF = 0.5 dB124610V CE= 6 Vf = 1 kHz 0.10.030.011.01030.310030Contours of Constant Noise FigureV CE = 6 V f = 120 Hz1010030 R g (k Ω)Contours of Constant Noise FigurePackage Dimensions0.60 Max0.55 Max0.712.70.5 Max1.272.54Ordering InformationPart NameQuantityShipping Container2SC2545ETZ-E 2SC2545FTZ-E 2SC2546FTZ-E 2SC2547ETZ-E2500Hold Box, Radial TapingNote: For some grades, production may be terminated. Please contact the Renesas sales office to check the state ofproduction before ordering the product. RENESAS SALES OFFICESRefer to "/en/network" for the latest and detailed information.Renesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.ATel: <1> (408) 382-7500, Fax: <1> (408) 382-7501Renesas Technology Europe LimitedDukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900Renesas Technology Hong Kong Ltd.7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong KongTel: <852> 2265-6688, Fax: <852> 2730-6071Renesas Technology Taiwan Co., Ltd.10th Floor, No.99, Fushing North Road, Taipei, TaiwanTel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999Renesas Technology (Shanghai) Co., Ltd.Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, ChinaTel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952Renesas Technology Singapore Pte. Ltd.1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632Tel: <65> 6213-0200, Fax: <65> 6278-8001Renesas Technology Korea Co., Ltd.Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, KoreaTel: <82> 2-796-3115, Fax: <82> 2-796-2145Renesas Technology Malaysia Sdn. Bhd.Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, MalaysiaTel: <603> 7955-9390, Fax: <603> 7955-9510。
2SK2645中文资料(fuji)中文数据手册「EasyDatasheet - 矽搜」
FAP-IIS系列
特征
高速开关 低导通电阻 无二次击穿 低驱动电源 高压 V GS =±30V防护证 额定重复性雪崩
2SK2645-01MR
外形图
N沟道MOS-FET
600V
1,2
9A
50W
应用
开关稳压器
UPS DC-DC转换
通用功率放大器
最大额定值和特性
- 绝对最大额定值 （
10
[A] Eas [mJ] I
12
Starting T [°C]
V [V] 本规范如有变更,恕不另行通知！
t [s]
雪崩能力 二极管正向导通电压 反向恢复时间 反向恢复电荷
V GS =0V V DS= V GS Tch=25°C Tch=125°C V DS=0V V GS =10V V DS=25V V DS=25V V GS =0V f=1MHz V CC=300V ID=9A V GS=10V RGS =10 L = 100µH Tch=25°C I F=2xI DR V GS=0V T ch=25°C IF=I DR V GS=0V -dI F/dt=100A/µs T ch=25°C
Unit V A A V A mJ W °C °C
- 电气特性（T
Item
漏源击穿电压 门门限电压 零栅压漏电流 门源漏电流 漏源极导通状态电阻 正向跨 输入电容 输出电容 反向传输电容 导通时间t on (t on =t d(on) +t r ) 关断时间t
off (ton=t d(off)+t f)
Typical Forward Transconductance vs. I
Gate Threshold Voltage vs. T
2SC2235中文资料(toshiba)中文数据手册「EasyDatasheet - 矽搜」
芯片中文手册,看全文,戳
东芝晶体管
音频功率放大器应用 驱动级放大器的应用
硅NPN外延型（厘进程）
2SC2235
2SC2235
单位：mm
• 为了补充2SA965.
绝对最大额定值
（TA = 25°C）
特点
符
评级
Unit
集电极基极电压
集电极 - 发射极电压
发射极基极电压 集电极电流 基极电流 集电极耗散功率 结温 存储温度范围
100 ms*
10 ms*
50
30 Collector current I
*: Single nonrepetitive 10
pulse Ta = 25°C
5 Curves must be derated
3 linearly with increase in
UM2455中文资料
DS-2455-01 Rev1. 2
page 1/ 88
UM2455
此页保留
DS-2455-01 Rev1. 2
page 2/ 88
UM2455 UM2455
2.4G 低功耗无线收发芯片 Low Power 2.4 GHz Transceiver for IEEE 802.15.4 Standard
应用领域 ..............................................................................................................................................3 概述 ....................................................................................................................................................3 特性 ....................................................................................................................................................4 功能框图 ..............................................................................................................................................5 1. 管脚配置.............
2SC4155A资料
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials
2.1 0.425 1.25 0.425
Unit：ｍｍ
①
②
③
0.9 0.7 0～0.1 0.15
APPLICATION
For Hybrid IC,small type machine low frequency voltage Amplify application.
JEITA：SC-70
MAXIMUM RATINGS（Ta=25℃）
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
2SC3325中文资料
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)2SC3325Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications• Excellent h FE linearity : h FE (2) = 25 (min) (V CE = 6 V, I C = 400 mA) • High voltage: V CEO = 50 V (min) • Complementary to 2SA1313 • Small packageAbsolute Maximum Ratings (Ta = 25°C)Characteristics Symbol RatingUnitCollector-base voltage V CBO 50 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 5 V Collector current I C 500 mA Base currentI B 50 mA Collector power dissipation P C 200 mW Junction temperature T j 150 °C Storage temperature rangeT stg−55~150 °CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).MarkingUnit: mmJEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1AWeight: 0.012 g (typ.)Electrical Characteristics (Ta = 25°C)Characteristics Symbol TestCondition MinTyp.Max Unit Collector cut-off current I CBO V CB= 50 V, I E= 0 ⎯ ⎯ 0.1 μA Emitter cut-off current I EBO V EB= 5 V, I C= 0 ⎯⎯ 0.1 μAh FE (1)(Note)V CE= 1 V, I C= 100 mA 70 ⎯ 240DC current gainh FE (2)(Note)V CE= 6 V, I C= 400 mA 25 ⎯⎯Collector-emitter saturation voltage V CE (sat)I C= 100 mA, I B= 10 mA ⎯ 0.1 0.25V Base-emitter voltage V BE V CE= 1 V, I C= 100 mA ⎯ 0.8 1.0 V Transition frequency f T V CE= 6 V, I C= 20 mA ⎯ 300 ⎯ MHz Collector output capacitance C ob V CB= 6 V, I E= 0, f = 1 MHz ⎯ 7 ⎯ pF Note: h FE (1) classification O: 70~140, Y: 120~240h FE (2) classification O: 25 (min), Y: 40 (min)RESTRICTIONS ON PRODUCT USE20070701-EN GENERAL •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。