MMSZ4687中文资料

合集下载

4787中文资料

FEATURES:• Cable connection for RG 58 and 142, 223, 141MATERIALS:Body and Fitting – Brass per QQ-B-626, Alloy 360, ½ HardCenter Contact – Gold Plated Brass per QQ-B-626, Alloy 360, ½ Hard Dielectric – PTFEGaskets and Seals: Silicone RubberFinish: Body and Fittings: Tarnish resistantCenter Contact: Gold flash over silver plate per QQ-S-365 RATINGS:Nominal Impedance: 50 OhmsDielectric Withstanding Voltage: 2500 VRMS, 1 Min., 60 Hz. ORDERING INFORMATION: Model 4787All dimensions are in inches. Tolerances (except noted): .xx = ±.02” (,51 mm), .xxx = ± .005” (,127 mm).All specifications are to the latest revisions. Specifications are subject to change without notice.Registered trademarks are the property of their respective companies.Made in USAFIGURE #1A. Slide clamp nut, flat washer and Vee gasket over cable.B. Strip cable jacket to dimensions shown.FIGURE #1AC. Slide braid clamp over braid positioned with the inner shoulder against the cable jacketD. Fold braid over braid clamp.E. Strip DielectricFIGURE #2F. Solder center contact to cable center conductor.FIGURE #3G. Slide clamp nut, flat washer and Vee gasket forward against braid clamp.A. Place connector body over end of cable, thread clamp nut into body and tighten.All dimensions are in inches. Tolerances (except noted): .xx = ±.02” (,51 mm), .xxx = ± .005” (,127 mm).All specifications are to the latest revisions. Specifications are subject to change without notice.Registered trademarks are the property of their respective companies.Made in USA。

超米特电子有限公司产品说明书

1US Headquarters TEL +(1) 781-935-4850FAX +(1) 781-933-4318 • Europe TEL +(44) 1628 404000FAX +(44) 1628 404090Asia Pacific TEL +(852) 2 428 8008FAX +(852) 2 423 8253South America TEL +(55) 11 3917 1099FAX +(55) 11 3917 0817Superior elongation and tensilestrength help to prevent tearing in use due to mishandling. Typical properties for CHO-SEAL 1310 and 1273 materi-al are shown on pages 33 and 32respectively.High Shielding PerformanceCHO-SEAL 1310 material provides more than 80 dB of shielding effectiv-ness from 100 MHz to 10 GHz, while CHO-SEAL 1273 material provides more than 100 dB.Low Volume ResistivityBoth materials have exceptionally low volume resistivity, which makes them well suited for grounding appli-cations in which a flexible electrical contact is needed.Low Compression GasketSpacer gaskets are typicallydesigned to function under low deflec-tion forces. Chomerics uses design tools such as Finite Element Analysis (FEA) to accurately predict compres-sion-deflection behavior of various cross section options. Refer to page16.LCP Plastic SpacerLiquid crystal polymer (LCP)spacers, including those made with Vectra A130 material, provide aCHO-SEAL ®1310 or 1273Conductive ElastomersWith EMI spacer gaskets, shielding and grounding are provided by Chomerics’CHO-SEAL 1310 and 1273 conductive elastomers, specifi-cally formulated for custom shape molded parts. They provide excellent shielding and isolation against electro-magnetic interference (EMI), or act as a low impedance ground path between PCB traces and shielding media. Physically tough, these elas-tomers minimize the risk of gasket damage, in contrast to thin-walled extrusions or unsupported molded gaskets.Silicone-based CHO-SEAL 1310and 1273 materials offer excellent resistance to compression set over a wide temperature range, resulting in years of continuous service. CHO-SEAL 1310 material is filled with silver-plated-glass particles, while 1273 utilizes silver-plated-copper filler to provide higher levels of EMI shielding effectiveness.EMI Spacer GasketsThe unique design of Chomerics’EMI spacer gaskets features a thin plastic retainer frame onto which a conductive elastomer is molded. The elastomer can be located inside or outside the retainer frame, as well as on its top and bottom surface. EMI spacer gaskets provide a newapproach to designing EMI gaskets into handheld electronics such as dig-ital cellular phones. Board-to-board spacing is custom designed to fit broad application needs. Customized cross sections and spacer shapes allow for very low closure forcerequirements and a perfect fit in any design or device.Robotic InstallationSpacer gaskets can be installed quickly by robotic application. Integral locater pins in the plastic spacer help ensure accuratepositioning in both manual and pick-and-place assembly. Benefits include faster assembly and lower labor costs.The integrated conductive elastomer/plastic spacer gasket is a low cost,easily installed system for providing EMI shielding and grounding in small electronic enclosures.Figure 1Single Piece EMI Gasket/Locator PinsCHO-SEAL 1310 or 1273 Conductive Elastomer (Inside)Plastic Spacer Around Outsideor InsideApplications for EMI Spacer GasketsThe spacer gasket concept is especially suited to digital and dual board telephone handsets or other handheld electronic devices. It provides a low impedance path between peripheral ground traces on printed circuit boards and components such as:•the conductive coating on a plastic housing•another printed circuit board •the keypad assemblyTypical applications for EMI spacer gaskets include:•Digital cellular, handyphone and personal communications services (PCS) handsets •PCMCIA cards•Global Positioning Systems (GPS)•Radio receivers•Other handheld electronics, e.g.,personal digital assistants (PDAs)•Replacements for metal EMI shield-ing “fences” on printedcircuit boards in wireless tele-communications devicesstable platform for direct, highprecision molding of conductive elas-tomers. The Vectra A130 material described in Table 1 has excellent heat deflection temperature character-istics (489°F, 254°C). For weight con-siderations, the LCP has aspecific gravity of only 1.61. This plas-tic is also 100% recyclable.Typical EMI Spacer Gasket Design ParametersThe EMI spacer gasket concept can be considered using the design parameters shown in Table 2. Some typical spacer gasket profiles are shown below.Figure 2Typical Spacer Gasket Profiles3US Headquarters TEL +(1) 781-935-4850FAX +(1) 781-933-4318 • Europe TEL +(44) 1628 404000FAX +(44) 1628 404090Asia Pacific TEL +(852) 2 428 8008FAX +(852) 2 423 8253South America TEL +(55) 11 3917 1099FAX +(55) 11 3917 0817Finite Element AnalysisChomerics, a division of the Parker Hannifin Corporation’s Seal Group, is the headquarters of Parker Seal’s Elastomer Simulation Group. This unit specializes in elastomer finite element analysis (FEA) using MARC K6 series software as a foundation for FEA capability.Benefits of FEA include:•Quickly optimizing elastomer gasket designs•Allowing accurate predictions of alternate elastomer design concepts •Eliminating extensive trial and error prototype evaluationTypical use of FEA in EMI spacer gasket designs is to evaluate the force vs. deflection requirements of alternate designs.For example, onespacer design features a continuous bead of con-ductive elastomer molded onto a plastic spacer. An alternative designemploys an “interrupted bead,” where the interrup-tions (gaps left on the plastic frame) are sized to maintain the requiredlevel of EMI shielding. Figure 4illustrates these alternative designs.Gasket DeflectionFigure 5 compares the effect of continuous and interrupted elastomer gasket designs in terms of the force required to deflect the conductive elastomer. This actual cellular handset application required a spacer gasket with interrupted bead to meet desired deflection forces.Chomerics Designand Application ServicesChomerics will custom design a spacer for your application. Advice,analysis and design assistance will be provided by Chomerics Applications and Design engineers at no additional fee. Contact Chomerics directlyat the locations listed at the bottom of the page.Figure 3FEA Example of an EMISpacer Gasket Cross SectionFigure 4Continuous (top) and InterruptedElastomer GasketsFigure 5Typical Spacer Gasket Deflection。

SM8JZ47中文资料

Gate Non−Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off−State Voltage
SM8GZ47 SM8JZ47
SM8GZ47A SM8JZ47A
Critical Rate of Rise of Off−State Voltage at Commutation
SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A
TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE
SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A
AC POWER CONTROL APPLICATIONS
SYMBOL
TOSHIBA PRODUCT MARK
SM8GZ47, SM8GZ47A
TYPE
SM8JZ47, SM8JZ47A
SM8GZ47A, SM8JZ47A
*4
MARK
M8GZ47 M8JZ47
A
Example 8A : January 1998 8B : Febrary 1998 8L : December 1998
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

2SD468中文资料

2SD468Silicon NPN EpitaxialApplication• Low frequency power amplifier• Complementary pair with 2SB562Outline2SD4682Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Collector to base voltage V CBO 25V Collector to emitter voltage V CEO 20V Emitter to base voltage V EBO 5V Collector current I C 1.0A Collector peak current i C(peak) 1.5A Collector power dissipation P C 0.9W Junction temperature Tj 150°C Storage temperatureTstg–55 to +150°CElectrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test conditions Collector to base breakdown voltageV (BR)CBO25——V I C = 10 µA, I E = 0Collector to emitter breakdown voltageV (BR)CEO 20——V I C = 1 mA, R BE = ∞Emitter to base breakdown voltageV (BR)EBO 5——V I E = 10 µA, I C = 0Collector cutoff current I CBO —— 1.0µAV CB = 20 V, I E = 0DC current transfer ratio h FE *185—240V CE = 2 V, I C = 0.5 A*2Collector to emitter saturation voltageV CE(sat)—0.20.5V I C = 0.8 A, I B = 0.08 A*2Base to emitter voltage V BE —0.79 1.0V V CE = 2 V, I C = 0.5 A*2Gain bandwidth product f T —190—MHz V CE = 2 V, I C = 0.5 A*2Collector output capacitanceCob—22—pF V CB = 10 V, I E = 0, f = 1 MHzNotes: 1.The 2SD468 is grouped by h FE as follows.2.Pulse test B C85 to170120 to 2402SD46832SD4684Hitachi CodeJEDECEIAJWeight (reference value)TO-92 Mod—Conforms0.35 gUnit: mm元器件交易网Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

TZS4688资料

TK VZ – Temperature Coefficient of VZ ( 10 –4 /K ) 15
Tj = 25°C 100
10
5 IZ=5mA 0
IZ=5mA 10
DVZ
1 0
95 9598
–5 0 10 20 30 40 50 VZ – Z-Voltage ( V )
5
10
15
20
25
VZ – Z-Voltage ( V )
x
Type
Symbol PV IZ Tj Tstg
Value 500 PV/VZ 175 –65...+175
Unit mW mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W
Max. V 1.890 2.100 2.310 2.520 2.835 3.150 3.465 3.780 4.095 4.515 4.935 5.355 5.880 6.510 7.140 7.875 8.610 9.135 9.555 10.50 11.55 12.60 13.65 14.70 15.75 16.80 17.85 18.90 19.95 21.00 23.10 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 45.15
www.vishay.de • FaxBack +1-408-970-5600 2 (6)
Document Number85613 Rev. 2, 01-Apr-99

MMSZ4685T1中文资料

Symbol
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
I IF
θVZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
θVZ, TEMPERATURE COEFFICIENT (mV/°C)
8 7 6 TYPICAL TC VALUES 5 4 3
2 1 0 −1
VZ @ IZT
100 TYPICAL TC VALUES
PD
(Note 1) @ TL = 75°C
500
mW
Derated above 75°C
6.7 mW/°C
Thermal Resistance, (Note 2) Junction−to−Ambient
RqJA
340
°C/W
Thermal Resistance, (Note 2) Junction−to−Lead
DN
15.20
16
16.80
50
MMSZ4704T1
DP
16.15
17
17.85
50
MMSZ4705T1
DT
17.10
18
18.90
50
MMSZ4706T1
DU
18.05
19
19.95

MMSZ4686-F中文资料

Rev. A/AH 2007-12-14 Page 1 of 3
元器件交易网
500mW Two Terminals SMD Zener Diodes
MMSZ4685-F – MMSZ4717-F
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
TAITRON COMPONENTS IO BRASIL LTDA
RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052
VZ(V)
Min. 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.27 8.65 9.5 10.5 11.4 12.4 13.3 14.3 15.2 16.2 17.1 18.1 19.0 20.9 22.8 23.8 25.7 26.6 28.5 31.4 34.2 37.1 40.9 Max. 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.14 9.56 10.5 11.6 12.6 13.7 14.7 15.8 16.8 17.9 18.9 20.0 21.0 23.1 25.2 26.3 28.4 29.4 31.5 34.7 37.8 41.0 45.2
元器件交易网
500mW Two Terminals
SMD Zener Diodes MMSZ4685-F – MMSZ4717-F

MMSZ4684中文资料

2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.14 9.56 10.5 11.6 12.6 13.7 14.7 15.8 16.8 17.9 18.9 20.0 21.0 23.1 25.2 26.3 28.4 29.4 31.5 34.7 37.8 41.0 45.2
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA
RΘJA VF
– –
– –
340(1) 0.9
°C/W Volts
NOTES: (1) FR-4 or FR-5 board with minimum recommended solder pad layout.
ห้องสมุดไป่ตู้
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”) Power Dissipation at TL = 75°C Maximum Junction Temperature Storage Temperature Range Ptot Tj TS 500(1) 150 -55 to +150 mW °C °C
Test Voltage VR (Volts)

AM467 中文资料 chinese

AM467
最大值 5.5 530
单位 V µA
125 150 150
°C °C °C
±0.3 ±3 ±6 200 –0.6 ±100 ±5 ±30
mV µV/°C µV/°C nA nA/°C mV nA pA/°C M pF
3.7
V dB dB
VCC – 0.2
V µA k dB kHz
VOUT / I OUT , 进入和输出
特点：
宽差分输入信号范围 (5mVFS...100mVFS) 极小的输入失调电压极小的失调电压温度漂移极小的输入级噪声高共模抑制比 CMRR: > 120dB 宽的工作温度范围： – 40°C... +125°C 输出电压范围可调轨对轨输出级(Rail-to-Rail)： VOUT = 0,2V ... VCC – 0,2V 具有电流输出或进入的输出级单电源供电：VCC = 5V （ratiometrical）集成化的 EMV 抗干扰功能最大过载工作电压保护 12V 集成化的 ESD 保护功能输出短路保护
典型应用

用于陶瓷压力传感器放大转换（耐高温）溅射薄膜压力传感器和电阻应变片 DMS 用于磁敏电阻 GMR
工业和汽车传感器应用
苏州涵泰宏业电子技术有限公司
通讯地址：苏州新区滨河路 588 号 4A08 室电话/传真：0512-68052060 18015596781 E–Mail:beijing2008lz@ 邮编：215011
苏州涵泰宏业电子技术有限公司
通讯地址：苏州新区滨河路 588 号 4A08 室电话/传真：0512-68052060 18015596781 E–Mail:beijing2008lz@ 邮编：215011

MMSZ4683-TP;MMSZ4688-TP;MMSZ4694-TP;MMSZ4691-TP;MMSZ4684-TP;中文规格书,Datasheet资料

THRU 500mW Silicon Zener DiodesFeaturesx Zener Voltage 1.8V-39Vx Very Sharp Reverse Characteristic x VZ – tolerance ± 5%x High ReliabilityMaximum RatingsSymbolValue UnitsMax. Steady State PowerDissipation at T L <75OC, Lead Length=3/8” P D500 mWJunction Temperature T J 150 кStorage Temperature Range T STG -55to 150кThermal Resistance( Junctionto Ambient)R thJA340 K/W Electrical Characteristics @ 25q C Unless Otherwise SpecifiedSymbol Maximum Unit Max. Forward Voltage@ I F =10mAV F0.95 V Mechanical Dataomp onents 20736 Marilla Street Chatsworth! "# $ % ! "#TMMicro Commercial ComponentsMMSZ4678MMSZ4716x Polarity: Cathode indicated by polarity band• Lead Free Finish/RoHS Compliant ("P" Suffixdesignates RoHS Compliant. See ordering information)• Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1Micro Commercial ComponentsTMMMSZ 4678thru MMSZ 4716Electrical Characteristics (T L = 30O C Unless Otherwise Noted, VF=0.95V Max @ IF=10mA for all types)Zener Voltage Leakage CurrentVz(Volts) @I ZT I R @V RDeviceMin Nom Max u A u A VoltsDeviceMarkingMMSZ4678 1.71 1.8 1.89 50 7.5 1.0 CC MMSZ4679 1.90 2.0 2.10 50 5.0 1.0 CD MMSZ4680 2.09 2.2 2.31 50 5.0 1.0 CE MMSZ4681 2.28 2.40 2.52 50 2.0 1.0 CF MMSZ4682 2.565 2.7 2.835 50 1.0 1.0 CH MMSZ4683 2.85 3.0 3.15 500.8 1.0 CJ MMSZ4684 3.135 3.3 3.465 507.5 1.5 CK MMSZ4685 3.42 3.6 3.78 507.5 2.0 CM MMSZ4686 3.705 3.9 4.095 50 5.0 2.0CN MMSZ4687 4.085 4.3 4.515 50 4.0 2.0CP MMSZ4688 4.465 4.7 4.935 5010 3.0 CT MMSZ4689 4.845 5.1 5.355 5010 3.0 CU MMSZ4690 5.32 5.6 5.88 50 10 4.0 CV MMSZ4691 5.89 6.2 6.51 50 10 5.0 CA MMSZ4692 6.46 6.8 7.14 5010 5.1 CX MMSZ46937.125 7.5 7.875 5010 5.7 CY MMSZ46947.79 8.2 8.61 5010 6.2 CZ MMSZ46958.265 8.7 9.135 5010 6.6 DC MMSZ46968.645 9.1 9.555 5010 6.9 DD MMSZ46979.50 10 10.5 50107.6 DE MMSZ469810.45 11 11.55 500.05 8.4 DF MMSZ469911.40 12 12.6 500.059.1 DH MMSZ470012.35 13 1365 500.059.8 DJ MMSZ470113.30 14 14.7 500.0510.6 DK MMSZ470214.25 15 15.75 500.0511.4 DM MMSZ470315.20 16 16.8 500.0512.1 DN MMSZ470416.15 17 17.85 500.0512.9 DP MMSZ4706 18.05 19 19.95 50 0.05 14.4 DU MMSZ470719.00 20 21 500.01 15.2 DV MMSZ4711 25.65 27 28.35 500.01 20.4 EA MMSZ471328.5 30 31.5 500.01 22.8 ED MMSZ4714 31.35 33 34.65 50 0.01 25.0 EF MMSZ4716 37.05 39 40.95 50 0.01 29.6 EHMMSZ470517.10 18 18.9 500.0513.6 DT MMSZ4710 23.75 25 26.25 50 0.01 19.0 DY MMSZ4708 20.9 22 23.1 50 0.01 16.7 DA MMSZ4709 22.8 24 25.2 50 0.01 18.2 DX MMSZ4712 26.6 28 29.4 50 0.01 21.2 EC MMSZ4715 34.2 36 37.8 50 0.01 27.3 EFMicro Commercial ComponentsTMMMSZ4678 thru MMSZ4716TYPICAL CHARACTERISTICSV Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θV Z , NOMINAL ZENER VOLTAGE (V)− 3− 2−1012345678Figure 1. Temperature Coefficients (Temperature Range −55°C to +150°C)V Z , T E M P E R A T U R E C O E F F I C I E N T (m V /C )°θ100101V Z , NOMINAL ZENER VOLTAGE (V)Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C)1.21.00.80.60.40.20T, TEMPERATURE (5C)Figure 3. Steady State Power Derating P p k , P E A K S U R G E P O W E R (W A T T S )PW, PULSE WIDTH (ms)Figure 4. Maximum Nonrepetitive Surge Power1000100101V Z , NOMINAL ZENER VOLTAGEFigure 5. Effect of Zener Voltage onZener ImpedanceZ Z T , D Y N A M I C I M P E D A N C E ()ΩV F , FORWARD VOLTAGE (V)Figure 6. Typical Forward VoltageP D , P O W E R D I S S I P A T I O N (W A T T S )TMMicro Commercial ComponentsMMSZ4678 thru MMSZ4716TYPICAL CHARACTERISTICSC , C A P A C I T A N C E (p F )1000100101V Z , ZENER VOLTAGE (V)1001010.10.01I Z , Z E N E R C U R R E N T (m A )V Z , ZENER VOLTAGE (V)1001010.10.01I R , L E A K A G E C U R R E N T (A )µV Z , NOMINAL ZENER VOLTAGE (V)Figure 8. Typical Leakage Current10001001010.10.010.0010.00010.00001I Z , Z E N E R C U R R E N T (m A )Figure 9. Zener Voltage versus Zener Current(V Z Up to 12 V)Figure 10. Zener Voltage versus Zener Current(12 V to 91 V)Micro Commercial ComponentsOrdering Information :Device PackingPart Number-TP Tape&Reel: 3Kpcs/Reel***IMPORTANT NOTICE***Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT***MCC's products are not authorized for use as critical components in life support devices or systems without the express writtenapproval of Micro Commercial Components Corporation.***CUSTOMER AWARENESS***Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors./分销商库存信息:MICRO-COMMERICAL-COMMSZ4683-TP MMSZ4688-TP MMSZ4694-TP MMSZ4691-TP MMSZ4684-TP。

MMSZ5256BS-7-F中文资料

Lead-free·Planar Die Construction·Ultra-Small Surface Mount Package ·General Purpose·Ideally suited for Automated Assembly Processes ·Lead Free /RoHS Compliant (Note 3)FeaturesMaximum Ratings@ T A = 25°C unless otherwise specifiedNotes: 1. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at /datasheets/ap02001.pdf.2. Short duration pulse test used to minimize self-heating effect.3. No purposefully added lead.Mechanical DataMMSZ5221BS - MMSZ5259BSSURFACE MOUNT ZENER DIODE·Case: SOD-323·Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0·Moisture Sensitivity: Level 1 per J-STD-020C ·Terminals: Solderable per MIL-STD-202, Method 208·Lead Free Plating (Matte Tin Finish annealed over Alloy 42leadframe). Please see Ordering Information, Note 5, on Page 2·Polarity: Cathode Band ·Marking: See Page 2·Weight: 0.004 grams (approximate)Electrical Characteristics@ T A = 25°C unless otherwise specified5. f = 1KHz.XX = Product Type Marking Code (See Table Above)Marking InformationOrdering Information (Note 6)Notes: 6. For Packaging Details, go to our website at: /datasheets/ap02007.pdf.*Add “-7-F” to the appropriate type number in Table 1 above example: 6.2V Zener = MMSZ5234BS-7-F.0102030I , Z E N E R C U R R E N T (m A )Z V , ZENER VOLTAGE (V)Z Fig. 6 Zener Breakdown Characteristics10203040102030405012345678910I , ZE N E R C U R R E N T (m A )Z V , ZENER VOLTAGE (V)Z Fig. 5 Zener Breakdown Characteristics110100110100P , P E A K S U R G E P O W E R (W )P K PULSE WIDTH (ms)Fig. 4 Maximum Non-repetitive Surge Power10001101001000110100V , NOMINAL ZENER VOLTAGE (V)Z Fig. 3 Zener Impedance vs. Zener Voltage1101001000110100C , T O T A L C A P A C I T A N C E (p F )T V , NOMINAL ZENER VOLTAGE (V)Z Fig. 2 Typical Capacitance00.10.20.30.4255075100125150P , P O W E R D I S S I P A T I O N (W )D T , AMBIENT TEMPERATURE (°C)A Fig. 1 Power Dissipation vs Ambient TemperatureIMPORTANT NOTICEDiodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.LIFE SUPPORTDiodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.。

义隆中文资料 EM78P447S中文

EM78P447S
8位 OTP 微控制器
产品规Байду номын сангаас书
版本 1.7
义隆电子股份有限公司
2009.11
本文内容是由英文规格书翻译而来，目的是为了您的阅读更加方便。它无法跟随原稿的更新，文中可能存在翻译上的错误，请您参考英文规格书以获得更准确的信息。
商标告知:
IBM 为一个注册商标，PS/2 是 IBM 的商标之ㄧ.。
4.5 复位和唤醒 ..................................................................................................... 16
4.5.1 复位................................................................................................................... 16 4.5.2 状态寄存器的 RST, T, 和 P 的状态 ....................................................................... 20
Korea:
Elan Korea Electronics Company, Ltd.
301 Dong-A Building 632 Kojan-Dong, Namdong-ku Incheon City, KOREA Tel: +82 32 814-7730 Fax:+82 32 813-7730
深圳分公司:
香港分公司:
义隆电子（香港）有限公司九龙观塘巧明街 95 号世达中心 19 楼 A 室电话：+852 2723-3376 传真：+852 2723-7780

MMSZ4707中文资料

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”) Power Dissipation at TL = 75°C Maximum Junction Temperature Storage Temperature Range Ptot Tj TS 500(1) 150 -55 to +150 mW °C °C
2.00 1.00 0.80 7.50 7.50 5.00 4.00 10.0 10.0 10.0 10.0 10.0 10.0 1.00 1.00 1.00 1.00 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01
2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.14 9.56 10.5 11.6 12.6 13.7 14.7 15.8 16.8 17.9 18.9 20.0 21.0 23.1 25.2 26.3 28.4 29.4 31.5 34.7 37.8 41.0 45.2
NOTES: (1) Measured with device junction in thermal equilibrium
Test Voltage VR (Volts)

MMSZ5267-V中文资料

MMSZ5225-V to MMSZ5267-VDocument Number 85774Rev. 1.5, 20-Mar-06Vishay Semiconductors117431Small Signal Zener DiodesFeatures•Silicon Planar Power Zener Diodes.•Standard Zener voltage tolerance is ± 5 %with a "B" suffix (e.g.: MMSZ5225B-V),suffix “C” is ± 2 % tolerance•These diodes are also available in MiniMELF case with the designation TZM5225 ...TZM5267,DO-35 case with type designation 1N5225 ...1N5267 and SOT23 case with the type designa-tion MMBZ5225-V ... MMBZ5267-V. •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECMechanical DataCase: SOD123 Plastic case Weight: approx. 9.3 mg Packaging codes/options:GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box GS08 / 3 k per 7 " reel (8 mm tape), 15 k/boxAbsolute Maximum RatingsT amb = 25°C, unless otherwise specified1)On FR - 4 or FR - 5 board with minimum recommended solder pad layout.Thermal CharacteristicsT amb = 25°C, unless otherwise specified1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout.ParameterTest condition Symbol Value Unit Zener current (see T able "Characteristics")Power dissipationT L = 75°CP tot5001)mWParameterTest condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 3401)K/W Maximum junction temperature T j 150°C Storage temperature rangeT stg- 65 to + 175°C 2Document Number 85774Rev. 1.5, 20-Mar-06MMSZ5225-V to MMSZ5267-VVishay Semiconductors Electrical CharacteristicsT amb = 25°C unless otherwise noted Maximum V F = 0.9 V at I F = 10 mA1)The Zener Impedance is derived from the 1 kHz AC voltage which results when an AC current having an RMS value equal to 10 % of the Zener current (I ZT or I ZK ) is superimposed on I ZT or I ZK . Zener Impedance is measured at two points to insure a sharp knee on the breakdown curve and to eliminate unstable units.2)Measured with device junction in thermal equilibrium.PartnumberMarking CodeNominal Zener Voltage 2)T est Current Maximum Dynamic Impedance 1)Typical Temperature ofCoefficientMaximum Reverse Leakage Current V Z at I ZTI ZT Z ZT at I ZTZ ZK at I ZK = 0.25 mAαVZ I R V R VmA ΩΩ%/°C µA V MMSZ5225C5 3.020301600- 0.07550 1.0MMSZ5226D1 3.320281600- 0.07025 1.0MMSZ5227D2 3.620241700- 0.06515 1.0MMSZ5228D3 3.920231900- 0.06010 1.0MMSZ5229D4 4.320222000- 0.055 5.0 1.0MMSZ5230D5 4.720191900± 0.030 5.0 2.0MMSZ5231E1 5.120171600± 0.030 5.0 2.0MMSZ5232E2 5.620111600+ 0.038 5.0 3.0MMSZ5233E3 6.02071600+ 0.038 5.0 3.5MMSZ5234E4 6.22071000+ 0.045 5.0 4.0MMSZ5235E5 6.8205750+ 0.050 3.0 5.0MMSZ5236F17.5206500+ 0.058 3.0 6.0MMSZ5237F28.2208500+ 0.062 3.0 6.5MMSZ5238F38.7208600+ 0.065 3.0 6.5MMSZ5239F49.12010600+ 0.068 3.07.0MMSZ5240F5102017600+ 0.075 3.08.0MMSZ5241H1112022600+ 0.076 2.08.4MMSZ5242H2122030600+ 0.077 1.09.1MMSZ5243H3139.513600+ 0.0790.59.9MMSZ5244H4149.015600+ 0.0820.110MMSZ5245H5158.516600+ 0.0820.111MMSZ5246J1167.817600+ 0.0830.112MMSZ5247J2177.419600+ 0.0840.113MMSZ5248J3187.021600+ 0.0850.114MMSZ5249J419 6.623600+ 0.0860.114MMSZ5250J520 6.225600+ 0.0860.115MMSZ5251K122 5.629600+ 0.0870.117MMSZ5252K224 5.233600+ 0.0870.118MMSZ5253K325 5.035600+ 0.0890.119MMSZ5254K427 4.641600+ 0.0900.121MMSZ5255K528 4.544600+ 0.0910.121MMSZ5256M130 4.249600+ 0.0910.123MMSZ5257M233 3.858700+ 0.0920.125MMSZ5258M336 3.470700+ 0.0930.127MMSZ5259M439 3.280800+ 0.0940.130MMSZ5260M543 3.093900+ 0.0950.133MMSZ5261N147 2.71051000+ 0.0950.136MMSZ5262N251 2.51251100+ 0.0960.139MMSZ5263N356 2.21501300+ 0.0960.143MMSZ5264N460 2.11701400+ 0.0970.146MMSZ5265N562 2.01851400+ 0.0970.147MMSZ5266P168 1.82301600+ 0.0970.152MMSZ5267P2751.72701700+ 0.0980.156MMSZ5225-V to MMSZ5267-VDocument Number 85774Rev. 1.5, 20-Mar-06Vishay Semiconductors3Package Dimensions in mm (Inches) 4Document Number 85774Rev. 1.5, 20-Mar-06MMSZ5225-V to MMSZ5267-VVishay SemiconductorsOzone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。

FAIRCHILD MMSZ4688 说明书

Absolute Maximum RatingsParameterT STG- Storage TemperatureT J- Maximum Junction TemperatureP D- Total Power Dissipation at 25Derate above 25RØJA- Thermal Resistance Junction to AmbientVLead Solder Temperature (Max 10 second duration)Dimensions are in millimeterPkg type A0B0WD0D1E1E2FP1P0K0TWcTcSOD123(8mm)1.85+/-0.103.94+/-0.108.0+/-0.31.50+/-0.101.125+/-0.1251.75+/-0.106.25min3.50+/-0.054.0+/-0.14.0+/-0.11.50+/-0.100.200+/-0.0205.2+/-0.20.06+/-0.02P1A0D1P0FWE1D0E2B0TcWcK0TDimensions are in inches and millimetersTape SizeReel OptionDim ADim BDim CDim DDim NDim W1Dim W2Dim W3 (LSL-USL)8mm7" Dia7.00177.80.0591.5512 +0.020/-0.00813 +0.5/-0.20.79520.2 2.165550.331 +0.059/-0.0008.4 +1.5/00.56714.40.311 – 0.4297.9 – 10.98mm 13" Dia13.003300.0591.5512 +0.020/-0.00813 +0.5/-0.20.79520.24.001000.331 +0.059/-0.0008.4 +1.5/00.56714.40.311 – 0.4297.9 – 10.9See detail AADim A max13" Diameter Option7" Diameter OptionDim A MaxSee detail AAW3W2 max Measured at HubW1 Measured at HubDim NDim D minDim CB Min DETAIL AANotes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481rotational and lateral movement requirements (see sketches A, B, and C).20 deg maximum component rotation0.5mm maximum0.5mm maximumSketch C (Top View)Component lateral movementTypical component cavitycenter line20 deg maximumTypical component center lineB0A0Sketch B (Top View)Component RotationSketch A (Side or Front Sectional View)Component RotationUser Direction of FeedSOD123 Embossed Carrier Tape Configuration: Figure 3.0SOD123 Reel Configuration: Figure 4.0SOD-123 (FS PKG Code D6)TRADEMARKSACEx™Bottomless™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST FASTr™GTO™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status DefinitionAdvance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.SuperSOT™-8SyncFET™TinyLogic™UHC™VCX™HiSeC™ISOPLANAR™MICROWIRE™POP™PowerTrench QFET™QS™Quiet Series™SuperSOT™-3SuperSOT™-6。

MMSZ4678

客户基本资料
公司名称联系方式收货地址生产产品
联络人
电话：
姓名：电话：
传真：
职务：手机：
网址： □生产型企业
□贸易商
□技术电邮：
□采购
□其他
样品明细资料
元器件名称型号及封装
单机用量申请数量备注
预计生产情况
预计小批量生产日期：
规模生产日期：
样品申请日期：
样品申请流程
1、请详细、全面、真实填写上列各项。表格不够填写，可自行复制。 2、请以附件的形式将该文档通过 E-mail 发送，并请将此单打印盖章后，传真至：025-84710486。 3、公司将根据客户所填信息并综合相关情况，由样品小组负责确定该样品申请单是否执行及如何执行。 4、收到样品申请单并经审核通过后，南京库有现货2个工作日内发出；如需订货，交期3-4周，非常规品顺延1-2周。 5、样品免费，运费到付(一般选择顺丰快递)；样品数量：单个型号5～20pcs，或根据 BOM 表清单按2～5套提供。 6、说明：接单后，样品小组将努力跟进，但由于原厂生产等环节存有不确定因素，我们无法保证样品数量、型号完
RθJA
Operating and Storage Temperature Range
Tj, TSTG
Notes: Device mounted on ceramic PCB;5.0mm×7.0mm with pad areas 35 mm 2
Value
0.9
350 357 -65 ~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃unless otherwise noted)
Unit
V
mW