AM82731-025中文资料
B82732R2172B30;B82732R2901B30;B82732R2112B30;B82732R2222B30;B82732R2142B30;中文规格书,Datasheet资料
3+0.5
0.6
3+0.5
4.8 min.
Power line chokes Current-compensated D core double chokes
Characteristics and ordering codes IR A 0.4 0.6 0.7 0.9 1.0 1.1 1.4 1.7 2.2 LR mH 100 47 39 27 22 15 10 6.8 3.3 Lstray,typ H 850 400 330 230 165 125 85 55 27 Rtyp m 3000 1400 1100 750 580 440 300 190 110 Ordering code Vertical version B82732R2401B030 B82732R2601B030 B82732R2701B030 B82732R2901B030 B82732R2102B030 B82732R2112B030 B82732R2142B030 B82732R2172B030 B82732R2222B030 Horizontal version
= approval granted Impedance |Z| versus frequency f measured with windings in parallel at +20 °C typical values
10 6
IND0291-4-E
Current derating Iop/IR versus ambient temperature TA
Ω
|Z | 10 5
B82732R/W
10 4 2401B030 2601B030 2701B030 2901B030 2102B030 2112B030 2142B030 2172B030 2222B030 10 5 10 6 Hz 10 7 f
AMS285-25CN中文资料
Advanced AMS285-2.5/AMS385-2.5 Monolithic MICROPOWER VOLTAGE REFERENCE DIODE SystemsFEATURES APPLICATIONS•±20 mV (±0.8%) max. initial tolerance (A grade)• Battery Powered Systems• Operating Current 20µA to 20mA• Instrumentation• Low Voltage Reference 2.5V• A/D, D/A Converters• Max. 0.6Ω Dynamic Impedance (A grade)• Temperature measurement• Low Temperature Coefficient• Current sources• 1.2V Device and Adjustable Device also available• Notebook/Personal ComputerAMS285-1.2 and AMS285 series, respectively• Monitors/ VCR/ TVAMS385-1.2 and AMS385 series.• PagersGENERAL DESCRIPTIONThe AMS285-2.5/AMS385-2.5 are two-terminal micropower band-gap voltage reference diodes. They feature a very low dynamic impedance and good temperature coefficient, operating over a 20µA to 20mA current range. On-chip trimming is used to provide tight voltage tolerance. Since the AMS285-2.5/AMS385-2.5 is a band-gap reference, uses only transistors and resistors, low noise and good long term stability result. Careful design of the AMS285-2.5/AMS385-2.5 has made the device exceptionally tolerant of capacitive loading, making it easy to use in almost any reference application. The wide dynamic operating range allows its use with widely varying supplies with excellent regulation. The extremely low power drain of the AMS285-2.5/AMS385-2.5 makes these reference diodes useful for micropower circuitry. These voltage references can be used to make portable meters, regulators or general purpose analog circuitry with battery life approaching shelf life. Further more, the wide operating current allows it to replace older references with a tight tolerance part.The AMS285-2.5 is operational in the full industrial temperature range of -40°C to 85°C while AMS385-2.5 is operating over a 0°C to 70°C temperature range. The AMS285-2.5/AMS385-2.5 are available in TO-92, SO-8 and SOT-89 packages. ORDERING INFORMATION:TOL.PACKAGE TYPE OPERATINGTO-928 LEAD SOIC SOT-89TEMPERATURE RANGE±20mV AMS285-2.5AN AMS285-2.5AS AMS285-2.5AL-40 to 85° C±38mV AMS285-2.5BN AMS285-2.5BS AMS285-2.5BL-40 to 85° C±75mV AMS285-2.5CN AMS285-2.5CS AMS285-2.5CL-40 to 85° C±20mV AMS385-2.5AN AMS385-2.5AS AMS385-2.5AL 0 to 70° C±38mV AMS385-2.5BN AMS385-2.5BS AMS385-2.5BL 0 to 70° C±75mV AMS385-2.5CN AMS385-2.5CS AMS385-2.5CL 0 to 70° CABSOLUTE MAXIMUM RATINGSReverse Current 30mA Storage temperature-55°C to +150°C Forward Current 10mA Soldering informationOperating Temperature Range TO-92 package: 10 sec. 260°C AMS285-2.5-40°C to 85°C SOIC package: Vapor phase (60 sec) 215°C AMS385-2.5 0°C to 70°C Infrared (15 sec.) 220°CSOT-89 package: 10 sec. 265°C ELECTRICAL CHARACTERISTICSElectrical Characteristics at I R = 100 µA, and T A = +25°C unless otherwise specified.Parameter ConditionsAMS285A-2.5Min Typ MaxAMS285B-2.5Min Typ MaxAMS285C-2.5Min Typ Max UnitsReverse BreakdownVoltage (Note 4)IR - 100 µA2.480 2.500 2.520 2.462 2.500 2.538 2.425 2.500 2.575VReverse DynamicImpedance (Note 4)I R - 100 µA, f =20Hz0.20.6011ΩReverse Breakdown Voltage Change with current (Note 4)10µA ≤I R≤1mA1mA ≤I R≤20mA1.0101.0102.020mVMin. Operating Current (Note 4)121820132030132030µAµAWide Band Noise (Note 5)I R - 100 µA,10Hz ≤ f ≤ 10kHz120120120µVTemperature Coeff.(Note 6)2550100150ppm/°CLong Term Stability (Note 5)T A=25°C±.1°CT = 1000 Hr202020ppmELECTRICAL CHARACTERISTICSElectrical Characteristics at I R = 100 µA, and T A = +25°C unless otherwise specified.Parameter ConditionsAMS385A-2.5Min Typ MaxAMS385B-2.5Min Typ MaxAMS385C-2.5Min Typ Max UnitsReverse BreakdownVoltage (Note 4)IR - 100 µA2.480 2.500 2.520 2.462 2.500 2.538 2.425 2.500 2.575VReverse DynamicImpedance (Note 4)I R - 100 µA, f =20Hz0.20.6011ΩReverse Breakdown Voltage Change with Current (Note 4)10µA ≤I R≤1mA1mA ≤I R≤20mA1.0102.0202.020mVMin. Operating Current (Note 4)121820132030132030µAµAWide Band Noise (Note 5)I R - 100 µA,10Hz ≤ f ≤ 10kHz120120120µVTemperature Coeff.(Note 6)2550100150ppm/°CLong Term Stability (Note 5)T A=25°C±.1°CT = 1000 Hr202020ppmNote 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device isintended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics . The guaranteed specifications apply only for the test conditions listed.Note 2: For elevated temperature operation, T j max is: AMS285+125°C AMS385+100°CThermal ResistanceTO-92 SO-8SOT-89ϕ JA (junction to ambient)170°C/W (0.125” leads)165°C/W160°C/WNote 3: Parameters identified with boldface type apply at temperature extremes. All other numbers apply at T A = T J = 25°C.Note 4: Guaranteed and 100% production tested.Note 5: Guaranteed but not 100% production tested. These limits are not used to calculate average outgoing quality levels.Note 6: The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between the operating T MAX andT MIN , divided by T MAX - T MIN . The measured temperatures are 0°C, 25°C, 70°C and 85°C.PIN CONNECTIONSTO-928L SOIC SOT-89Plastic Package (N)SO Package (S)(L)Bottom View Top View Top ViewTYPICAL APPLICATIONSWide Input Micropower Reference Range Referencefrom 9V BatteryOUT 2.5VV = 3.7V TO 30V2.5VTYPICAL APPLICATIONS (Continued)0°C - 100°C Thermometer0°C - 100°C ThermometerTYPICAL APPLICATIONS (Continued)Micropower Thermocouple Cold Junction CompensatorTYPICAL PERFORMANCE CHARACTERISTICS-44816Reverse Characteristics0O U T P U TV O L T A G E C H AN G E (m V)0.11000Reverse Dynamic Impedance1100D Y N A M I C I M PE D A N C E (Ω)0.41.60.8REVERSE CURRENT (mA)REVERSE CURRENT (mA)2.50.110010REVERSE VOLTAGE (V)R E V E R S E C U R R E N T (µA )1Reverse Characteristics Forward CharacteristicsFORWARD CURRENT (mA)F O R W A R D V O L T AG E (V )0.11k 10Reverse Dynamic Impedance FREQUENCY (Hz)D Y N A M I C I M PE D A N C E (Ω)110k 1002.5302.490R E F E R E N C E V O L T A G E (V )Temperature Drift200400600TIME (µs)Response Time V O L T A G E S W I N G (V )0400800120014001001k 10k 100kNoise Voltage2001000N O I S E (n V /√H z )10FREQUENCY (Hz)6001001k 10k 100k CUTOFF FREQUENCY (Hz)I N T E G R A T E D N O I S E (µV )020406080100120TEMPERATURE (° C)2.5102.4702.460PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted.3 LEAD TO-92 PLASTIC PACKAGE (N)8 LEAD SOIC PLASTIC PACKAGE (S)PACKAGE DIMENSIONS inches (millimeters) unless otherwise noted (Continued).SOT-89 PLASTIC PACKAGE (L)。
LM2578AM资料
LM2578A/LM3578A Switching RegulatorGeneral DescriptionThe LM2578A is a switching regulator which can easily be set up for such DC-to-DC voltage conversion circuits as the buck,boost,and inverting configurations.The LM2578A fea-tures a unique comparator input stage which not only has separate pins for both the inverting and non-inverting inputs, but also provides an internal1.0V reference to each input, thereby simplifying circuit design and p.c.board layout.The output can switch up to750mA and has output pins for its collector and emitter to promote design flexibility.An external current limit terminal may be referenced to either the ground or the V in terminal,depending upon the application.In addi-tion,the LM2578A has an on board oscillator,which sets the switching frequency with a single external capacitor from<1 Hz to100kHz(typical).The LM2578A is an improved version of the LM2578,offer-ing higher maximum ratings for the total supply voltage and output transistor emitter and collector voltages.Featuresn Inverting and non-inverting feedback inputsn 1.0V reference at inputsn Operates from supply voltages of2V to40Vn Output current up to750mA,saturation less than0.9V n Current limit and thermal shut downn Duty cycle up to90%Applicationsn Switching regulators in buck,boost,inverting,and single-ended transformer configurationsn Motor speed controln Lamp flasherConnection Diagram and Ordering InformationDual-In-Line Package00871129Order Number LM3578AM,LM2578AN or LM3578ANSee NS Package Number M08A or N08E February2005LM2578A/LM3578A Switching Regulator©2005National Semiconductor Corporation Functional Diagram00871101L M 2578A /L M 3578A 2Absolute Maximum Ratings(Note1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.Total Supply Voltage50V Collector Output to Ground−0.3V to+50V Emitter Output to Ground(Note2)−1V to+50V Power Dissipation(Note3)Internally limited Output Current750mA Storage Temperature−65˚C to+150˚C Lead Temperature(soldering,10seconds)260˚C Maximum Junction Temperature150˚CESD Tolerance(Note4)2kVOperating RatingsAmbient Temperature RangeLM2578A−40˚C≤T A≤+85˚C LM3578A0˚C≤T A≤+70˚C Junction Temperature RangeLM2578A−40˚C≤T J≤+125˚C LM3578A0˚C≤T J≤+125˚CElectrical CharacteristicsThese specifications apply for2V≤V IN≤40V(2.2V≤V IN≤40V for T J≤−25˚C),timing capacitor C T=3900pF,and25%≤duty cycle≤75%,unless otherwise specified.Values in standard typeface are for T J=25˚C;values in boldface type apply for operation over the specified operating junction temperature range.LM2578A/Symbol Parameter Conditions Typical LM3578A Units(Note5)Limit(Note6) OSCILLATORf OSC Frequency20kHz24kHz(max)16kHz(min)∆f OSC/∆T Frequency Drift with Temperature−0.13%/˚C Amplitude550mV p-p REFERENCE/COMPARATOR(Note7)V R Input Reference I1=I2=0mA and 1.0V Voltage I1=I2=1mA±1%(Note8) 1.050/1.070V(max)0.950/0.930V(min)∆V R/∆V IN Input Reference Voltage LineRegulationI1=I2=0mA and0.003%/VI1=I2=1mA±1%(Note8)0.01/0.02%/V(max) I INV Inverting Input Current I1=I2=0mA,duty cycle=25%0.5µALevel Shift Accuracy Level Shift Current=1mA 1.0%10/13%(max)∆V R/∆t Input Reference Voltage Long TermStability100ppm/1000h OUTPUTV C(sat)Collector Saturation Voltage I C=750mA pulsed,Emittergrounded 0.7V0.90/1.2V(max)V E(sat)Emitter Saturation Voltage I O=80mA pulsed, 1.4VV IN=V C=40V 1.7/2.0V(max)I CES Collector Leakage Current V IN=V CE=40V,Emitter grounded,Output OFF 0.1µA200/250µA(max)BV CEO(SUS)Collector-Emitter Sustaining Voltage I SUST=0.2A(pulsed),V IN=060V50V(min) CURRENT LIMITV CL Sense Voltage Shutdown Level Referred to V IN or Ground110mV(Note9)80mV(min)160mV(max)LM2578A/LM3578A3Electrical Characteristics(Continued)These specifications apply for 2V ≤V IN ≤40V (2.2V ≤V IN ≤40V for T J ≤−25˚C),timing capacitor C T =3900pF,and 25%≤duty cycle ≤75%,unless otherwise specified.Values in standard typeface are for T J =25˚C;values in boldface type apply for operation over the specified operating junction temperature range.LM2578A/Symbol ParameterConditionsTypical LM3578A Units(Note 5)Limit (Note 6)CURRENT LIMIT ∆V CL /∆T Sense Voltage Temperature Drift 0.3%/˚C I CLSense Bias CurrentReferred to V IN 4.0µA Referred to ground0.4µA DEVICE POWER CONSUMPTION I SSupply CurrentOutput OFF,V E =0V2.0mA3.5/4.0mA (max)Output ON,I C =750mA pulsed,14mAV E =0VNote 1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.DC and AC electrical specifications do not apply when operating the device beyond its rated operating conditions.Note 2:For T J ≥100˚C,the Emitter pin voltage should not be driven more than 0.6V below ground (see Application Information).Note 3:At elevated temperatures,devices must be derated based on package thermal resistance.The device in the 8-pin DIP must be derated at 95˚C/W,junction to ambient.The device in the surface-mount package must be derated at 150˚C/W,junction-to-ambient.Note 4:Human body model,1.5k Ωin series with 100pF.Note 5:Typical values are for T J =25˚C and represent the most likely parametric norm.Note 6:All limits guaranteed at room temperature (standard type face)and at temperature extremes (bold type face).Room temperature limits are 100%production tested.Limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC)methods.All limits are used to calculate AOQL.Note 7:Input terminals are protected from accidental shorts to ground but if external voltages higher than the reference voltage are applied,excessive current will flow and should be limited to less than 5mA.Note 8:I 1and I 2are the external sink currents at the inputs (refer to Test Circuit).Note 9:Connection of a 10k Ωresistor from pin 1to pin 4will drive the duty cycle to its maximum,typically 90%.Applying the minimum Current Limit Sense Voltage to pin 7will not reduce the duty cycle to less than 50%.Applying the maximum Current Limit Sense Voltage to pin 7is certain to reduce the duty cycle below 50%.Increasing this voltage by 15mV may be required to reduce the duty cycle to 0%,when the Collector output swing is 40V or greater (see Ground-Referred Current Limit Sense Voltage typical curve).Typical Performance CharacteristicsOscillator Frequency Changewith TemperatureOscillator Voltage Swing0087113200871133L M 2578A /L M 3578A 4Typical Performance Characteristics(Continued)Input Reference Voltage Drift with TemperatureCollector Saturation Voltage(Sinking Current,Emitter Grounded)0087113400871135Emitter Saturation Voltage(Sourcing Current,Collector at V in )Ground ReferredCurrent Limit Sense Voltage0087113600871137Current Limit Sense Voltage Drift with Temperature Current Limit Response Time for Various Over Drives0087113800871139LM2578A/LM3578A5Typical Performance Characteristics(Continued)Current Limit Sense Voltagevs Supply VoltageSupply Current0087114000871141Supply CurrentCollector Current with Emitter Output Below Ground0087114200871143Test Circuit*Parameter tests can be made using the test circuit shown.Select the desired V in ,collector voltage and duty cycle with adjustable power supplies.A digital volt meter with an input resistance greater than 100M Ωshould be used to measure the following:Input Reference Voltage to Ground;S1in either position.Level Shift Accuracy (%)=(T P3(V)/1V)x 100%;S1at I 1=I 2=1mAInput Current (mA)=(1V −T p3(V))/1M Ω:S1at I 1=I 2=0mA.Oscillator parameters can be measured at T p4using a fre-quency counter or an oscilloscope.The Current Limit Sense Voltage is measured by connecting an adjustable 0-to-1V floating power supply in series with the current limit terminal and referring it to either the ground or the V in terminal.Set the duty cycle to 90%and monitor test point T P5while adjusting the floating power supply voltage until the LM2578A’s duty cycle just reaches 0%.This voltage is the Current Limit Sense Voltage.The Supply Current should be measured with the duty cycle at 0%and S1in the I 1=I 2=0mA position.*LM2578A specifications are measured using automated test equipment.This circuit is provided for the customer’s convenience when checking parameters.Due to possible variations in testing conditions,the measured values from these testing procedures may not match those of the factory.L M 2578A /L M 3578A 6Test Circuit*(Continued)00871103 Op amp supplies are±15VDVM input resistance>100MΩ*LM2578max duty cycle is90%Definition of TermsInput Reference Voltage:The voltage(referred to ground) that must be applied to either the inverting or non-inverting input to cause the regulator switch to change state(ON or OFF).Input Reference Current:The current that must be drawn from either the inverting or non-inverting input to cause the regulator switch to change state(ON or OFF).Input Level Shift Accuracy:This specification determines the output voltage tolerance of a regulator whose output control depends on drawing equal currents from the inverting and non-inverting inputs(see the Inverting Regulator of Fig-ure21,and the RS-232Line Driver Power Supply of Figure 23).Level Shift Accuracy is tested by using two equal-value resistors to draw current from the inverting and non-inverting input terminals,then measuring the percentage difference in the voltages across the resistors that produces a controlled duty cycle at the switch output.Collector Saturation Voltage:With the inverting input ter-minal grounded thru a10kΩresistor and the output transis-tor’s emitter connected to ground,the Collector Saturation-Voltage is the collector-to-emitter voltage for a given collector current.Emitter Saturation Voltage:With the inverting input termi-nal grounded thru a10kΩresistor and the output transistor’s collector connected to V in,the Emitter Saturation Voltage is the collector-to-emitter voltage for a given emitter current. Collector Emitter Sustaining Voltage:The collector-emitter breakdown voltage of the output transistor,mea-sured at a specified current.Current Limit Sense Voltage:The voltage at the CurrentLimit pin,referred to either the supply or the ground terminal,which(via logic circuitry)will cause the output transistor toturn OFF and resets cycle-by-cycle at the oscillator fre-quency.Current Limit Sense Current:The bias current for theCurrent Limit terminal with the applied voltage equal to theCurrent Limit Sense Voltage.Supply Current:The IC power supply current,excluding thecurrent drawn through the output transistor,with the oscilla-tor operating.Functional DescriptionThe LM2578A is a pulse-width modulator designed for useas a switching regulator controller.It may also be used inother applications which require controlled pulse-width volt-age drive.A control signal,usually representing output voltage,fed intothe LM2578A’s comparator is compared with an internally-generated reference.The resulting error signal and the os-cillator’s output are fed to a logic network which determineswhen the output transistor will be turned ON or OFF.Thefollowing is a brief description of the subsections of theLM2578A.COMPARATOR INPUT STAGEThe LM2578A’s comparator input stage is unique in that boththe inverting and non-inverting inputs are available to theuser,and both contain a1.0V reference.This is accom-plished as follows:A1.0V reference is fed into a modifiedvoltage follower circuit(see FUNCTIONAL DIAGRAM).When both input pins are open,no current flows through R1LM2578A/LM3578A7Functional Description(Continued)and R2.Thus,both inputs to the comparator will have the potential of the 1.0V reference,V A .When one input,for example the non-inverting input,is pulled ∆V away from V A ,a current of ∆V/R1will flow through R1.This same current flows through R2,and the comparator sees a total voltage of 2∆V between its inputs.The high gain of the system,through feedback,will correct for this imbalance and return both inputs to the 1.0V level.This unusual comparator input stage increases circuit flex-ibility,while minimizing the total number of external compo-nents required for a voltage regulator system.The inverting switching regulator configuration,for example,can be set up without having to use an external op amp for feedback polarity reversal (see TYPICAL APPLICATIONS).OSCILLATORThe LM2578A provides an on-board oscillator which can be adjusted up to 100kHz.Its frequency is set by a single external capacitor,C 1,as shown in Figure 1,and follows the equationf OSC =8x10−5/C 1The oscillator provides a blanking pulse to limit maximum duty cycle to 90%,and a reset pulse to the internal circuitry.OUTPUT TRANSISTORThe output transistor is capable of delivering up to 750mA with a saturation voltage of less than 0.9V.(see Collector Saturation Voltage and Emitter Saturation Voltage curves).The emitter must not be pulled more than 1V below ground (this limit is 0.6V for T J ≥100˚C).Because of this limit,an external transistor must be used to develop negative output voltages (see the Inverting Regulator Typical Application).Other configurations may need protection against violation of this limit (see the Emitter Output section of the Applica-tions Information).CURRENT LIMITThe LM2578A’s current limit may be referenced to either the ground or the V in pins,and operates on a cycle-by-cycle basis.The current limit section consists of two comparators:one with its non-inverting input referenced to a voltage 110mV below V in ,the other with its inverting input referenced110mV above ground (see FUNCTIONAL DIAGRAM).The current limit is activated whenever the current limit terminal is pulled 110mV away from either V in or ground.Applications InformationCURRENT LIMITAs mentioned in the functional description,the current limit terminal may be referenced to either the V in or the ground terminal.Resistor R3converts the current to be sensed into a voltage for current limit detection.CURRENT LIMIT TRANSIENT SUPPRESSIONWhen noise spikes and switching transients interfere with proper current limit operation,R1and C1act together as a low pass filter to control the current limit circuitry’s response time.Because the sense current of the current limit terminal varies according to where it is referenced,R1should be less than 2k Ωwhen referenced to ground,and less than 100Ωwhen referenced to V in .00871104FIGURE 1.Value of Timing Capacitor vsOscillator Frequency00871115FIGURE 2.Current Limit,Ground Referred00871116FIGURE 3.Current Limit,V in ReferredL M 2578A /L M 3578A 8Applications Information(Continued)C.L.SENSE VOLTAGE MULTIPLICATIONWhen a larger sense resistor value is desired,the voltage divider network,consisting of R1and R2,may be used.This effectively multiplies the sense voltage by(1+R1/R2).Also, R1can be replaced by a diode to increase current limit sense voltage to about800mV(diode V f+110mV).UNDER-VOLTAGE LOCKOUTUnder-voltage lockout is accomplished with few external components.When V in becomes lower than the zener breakdown voltage,the output transistor is turned off.This occurs because diode D1will then become forward biased, allowing resistor R3to sink a greater current from the non-inverting input than is sunk by the parallel combination of R1 and R2at the inverting terminal.R3should be one-fifth of the value of R1and R2in parallel.MAXIMUM DUTY CYCLE LIMITINGThe maximum duty cycle can be externally limited by adjust-ing the charge to discharge ratio of the oscillator capacitor with a single external resistor.Typical values are50µA for the charge current,450µA for the discharge current,and a voltage swing from200mV to750mV.Therefore,R1is selected for the desired charging and discharging slopes and C1is readjusted to set the oscillator frequency.00871117 FIGURE4.Current Limit Transient Suppressor,Ground Referred00871118 FIGURE5.Current Limit Transient Suppressor,V in Referred00871119 FIGURE6.Current Limit Sense Voltage Multiplication,Ground Referred00871120FIGURE7.Current Limit Sense Voltage Multiplication,V in Referred00871122FIGURE8.Under-Voltage LockoutLM2578A/LM3578A9Applications Information(Continued)DUTY CYCLE ADJUSTMENTWhen manual or mechanical selection of the output transis-tor’s duty cycle is needed,the cirucit shown below may be used.The output will turn on with the beginning of each oscillator cycle and turn off when the current sunk by R2and R3from the non-inverting terminal becomes greater than the current sunk from the inverting terminal.With the resistor values as shown,R3can be used to adjust the duty cycle from 0%to 90%.When the sum of R2and R3is twice the value of R1,the duty cycle will be about 50%.C1may be a large electrolytic capacitor to lower the oscillator frequency below 1Hz.REMOTE SHUTDOWNThe LM2578A may be remotely shutdown by sinking a greater current from the non-inverting input than from the inverting input.This may be accomplished by selecting re-sistor R3to be approximately one-half the value of R1and R2in parallel.EMITTER OUTPUTWhen the LM2578A output transistor is in the OFF state,if the Emitter output swings below the ground pin voltage,the output transistor will turn ON because its base is clamped near ground.The Collector Current with Emitter Output Be-low Ground curve shows the amount of Collector current drawn in this mode,vs temperature and Emitter voltage.When the Collector-Emitter voltage is high,this current will cause high power dissipation in the output transistor and should be avoided.This situation can occur in the high-current high-voltage buck application if the Emitter output is used and the catch diode’s forward voltage drop is greater than 0.6V.A fast-recovery diode can be added in series with the Emitter output to counter the forward voltage drop of the catch diode (see Figure 2).For better efficiency of a high output current buck regulator,an external PNP transistor should be used as shown in Figure 16.SYNCHRONIZING DEVICESWhen several devices are to be operated at once,their oscillators may be synchronized by the application of an external signal.This drive signal should be a pulse waveform with a minimum pulse width of 2µs.and an amplitude from00871121FIGURE 9.Maximum Duty Cycle Limiting00871123FIGURE 10.Duty Cycle Adjustment00871124FIGURE 11.Shutdown Occurs when V L is High00871130FIGURE 12.D1Prevents Output Transistor from Improperly Turning ON due to D2’s Forward Voltage L M 2578A /L M 3578A 10Applications Information(Continued)1.5V to2.0V.The signal source must be capable of 1.)driving capacitive loads and 2.)delivering up to 500µA for each LM2578A.Capacitors C1thru CN are to be selected for a 20%slower frequency than the synchronization frequency.Typical ApplicationsThe LM2578A may be operated in either the continuous or the discontinuous conduction mode.The following applica-tions (except for the Buck-Boost Regulator)are designed for continuous conduction operation.That is,the inductor cur-rent is not allowed to fall to zero.This mode of operation has higher efficiency and lower EMI characteristics than the dis-continuous mode.BUCK REGULATORThe buck configuration is used to step an input voltage down to a lower level.Transistor Q1in Figure 14chops the input DC voltage into a squarewave.This squarewave is then converted back into a DC voltage of lower magnitude by the low pass filter consisting of L1and C1.The duty cycle,D,of the squarewave relates the output voltage to the input volt-age by the following equation:V out =D x V in =V in x (t on )/(t on +t off ).Figure 15is a 15V to 5V buck regulator with an output current,I o ,of 350mA.The circuit becomes discontinuous at 20%of I o(max),has 10mV of output voltage ripple,an effi-ciency of 75%,a load regulation of 30mV (70mA to 350mA)and a line regulation of 10mV (12≤V in ≤18V).Component values are selected as follows:R1=(V o −1)x R2where R2=10k ΩR3=V/I sw(max)R3=0.15Ωwhere:V is the current limit sense voltage,0.11VI sw(max)is the maximum allowable current thru the output transistor.L1is the inductor and may be found from the inductance calculation chart (Figure 16)as follows:Given V in =15VV o =5VI o(max)=350mA f OSC =50kHzDiscontinuous at 20%of I o(max).Note that since the circuit will become discontinuous at 20%of I o(max),the load current must not be allowed to fall below 70mA.00871125FIGURE 13.Synchronizing Devices00871105FIGURE 14.Basic Buck RegulatorLM2578A/LM3578A11Typical Applications(Continued)00871106V in =15V R3=0.15ΩV o =5V C1=1820pF V ripple =10mV C2=220µF I o =350mA C3=20pF f osc =50kHz L1=470µH R1=40k ΩD1=1N5818R2=10k ΩFIGURE 15.Buck or Step-Down RegulatorL M 2578A /L M 3578A 12LM2578A/LM3578A Typical Applications(Continued)00871131FIGURE16.DC/DC Inductance Calculator13Typical Applications(Continued)Step 1:Calculate the maximum DC current through the inductor,I L(max).The necessary equations are indicated at the top of the chart and show that I L(max)=I o(max)for the buck configuration.Thus,I L(max)=350mA.Step 2:Calculate the inductor Volts-sec product,E-T op ,according to the equations given from the chart.For the Buck:E-T op =(V in −V o )(V o /V in )(1000/f osc )=(15−5)(5/15)(1000/50)=66V-µs.with the oscillator frequency,f osc ,expressed in kHz.Step 3:Using the graph with axis labeled “Discontinuous At %I OUT ”and “I L(max,DC)”find the point where the desired maximum inductor current,I L(max,DC)intercepts the desired discontinuity percentage.In this example,the point of interest is where the 0.35A line intersects with the 20%line.This is nearly the midpoint of the horizontal axis.Step 4:This last step is merely the translation of the point found in Step 3to the graph directly below it.This is accom-plished by moving straight down the page to the point which intercepts the desired E-T op .For this example,E-T op is 66V-µs and the desired inductor value is 470µH.Since this example was for 20%discontinuity,the bottom chart could have been used directly,as noted in step 3of the chart instructions.For a full line of standard inductor values,contact Pulse Engineering (San Diego,Calif.)regarding their PE526XX series,or A.I.E.Magnetics (Nashville,Tenn.).A more precise inductance value may be calculated for the Buck,Boost and Inverting Regulators as follows:BUCKL =V o (V in −V o )/(∆I L V in f osc )BOOSTL =V in (V o −V in )/(∆I L f osc V o )INVERTL =V in |V o |/[∆I L (V in +|V o |)f osc ]where ∆I L is the current ripple through the inductor.∆I L is usually chosen based on the minimum load current expected of the circuit.For the buck regulator,since the inductor current I L equals the load current I O ,∆I L =2•I O(min)∆I L =140mA for this circuit.∆I L can also be interpreted as ∆I L =2•(Discontinuity Factor)•I Lwhere the Discontinuity Factor is the ratio of the minimum load current to the maximum load current.For this example,the Discontinuity Factor is 0.2.The remainder of the components of Figure 15are chosen as follows:C1is the timing capacitor found in Figure 1.C2≥V o (V in −V o )/(8f osc 2V in V ripple L1)where V ripple is the peak-to-peak output voltage ripple.C3is necessary for continuous operation and is generally in the 10pF to 30pF range.D1should be a Schottky type diode,such as the 1N5818or 1N5819.BUCK WITH BOOSTED OUTPUT CURRENTFor applications requiring a large output current,an external transistor may be used as shown in Figure 17.This circuit steps a 15V supply down to 5V with 1.5A of output current.The output ripple is 50mV,with an efficiency of 80%,a load regulation of 40mV (150mA to 1.5A),and a line regulation of 20mV (12V ≤V in ≤18V).Component values are selected as outlined for the buck regulator with a discontinuity factor of 10%,with the addition of R4and R5:R4=10V BE1B f /I pR5=(V in −V −V BE1−V sat )B f /(I L(max,DC)+I R4)where:V BE1is the V BE of transistor Q1.V sat is the saturation voltage of the LM2578A output transis-tor.V is the current limit sense voltage.B f is the forced current gain of transistor Q1(B f =30for Figure 17).I R4=V BE1/R4I p =I L(max,DC)+0.5∆I LL M 2578A /L M 3578A 14Typical Applications(Continued)BOOST REGULATORThe boost regulator converts a low input voltage into a higher output voltage.The basic configuration is shown in Figure 18.Energy is stored in the inductor while the transis-tor is on and then transferred with the input voltage to the output capacitor for filtering when the transistor is off.Thus,V o =V in +V in (t on /t off ).The circuit of Figure 19converts a 5V supply into a 15V supply with 150mA of output current,a load regulation of 14mV (30mA to 140mA),and a line regulation of 35mV (4.5V ≤V in ≤8.5V).R1=(V o −1)R2where R2=10k Ω.R3=V/(I L(max,DC)+0.5∆I L )where:∆I L =2(I LOAD(min))(V o /V in )∆I L is 200mA in this example.R4,C3and C4are necessary for continuous operation and are typically 220k Ω,20pF,and 0.0022µF respectively.C1is the timing capacitor found in Figure 1.C2≥I o (V o −V in )/(f osc V o V ripple ).00871108V in =15V R4=200ΩV o =5V R5=330ΩV ripple =50mV C1=1820pF I o =1.5AC2=330µFf osc =50kHz C3=20pF R1=40k ΩL1=220µH R2=10k ΩD1=1N5819R3=0.05ΩQ1=D45FIGURE 17.Buck Converter with Boosted Output Current00871109FIGURE 18.Basic Boost Regulator00871111V in =5V R4=200k ΩV o =15V C1=1820pF V ripple =10mV C2=470µF I o =140mA C3=20pF f osc =50kHz C4=0.0022µF R1=140k ΩL1=330µH R2=10k ΩD1=1N5818R3=0.15ΩFIGURE 19.Boost or Step-Up RegulatorLM2578A/LM3578A15Typical Applications(Continued)D1is a Schottky type diode such as a 1N5818or 1N5819.L1is found as described in the buck converter section,using the inductance chart for Figure 16for the boost configuration and 20%discontinuity.INVERTING REGULATORFigure 20shows the basic configuration for an inverting regulator.The input voltage is of a positive polarity,but the output is negative.The output may be less than,equal to,or greater in magnitude than the input.The relationship be-tween the magnitude of the input voltage and the output voltage is V o =V in x (t on /t off ).Figure 21shows an LM2578A configured as a 5V to −15V polarity inverter with an output current of 300mA,a load regulation of 44mV (60mA to 300mA)and a line regulation of 50mV (4.5V ≤V in ≤8.5V).R1=(|V o |+1)R2where R2=10k Ω.R3=V/(I L(max,DC)+0.5∆I L ).R4=10V BE1B f /(I L (max,DC)+0.5∆I L )where:V,V BE1,V sat ,and B f are defined in the “Buck Converter with Boosted Output Current”section.∆I L =2(I LOAD(min))(V in +|V o |)/V INR5is defined in the “Buck with Boosted Output Current”section.R6serves the same purpose as R4in the Boost Regulator circuit and is typically 220k Ω.C1,C3and C4are defined in the “Boost Regulator”section.C2≥I o |V o |/[f osc (|V o |+V in )V ripple ]L1is found as outlined in the section on buck converters,using the inductance chart of Figure 16for the invert con-figuration and 20%discontinuity.BUCK-BOOST REGULATORThe Buck-Boost Regulator,shown in Figure 22,may step a voltage up or down,depending upon whether or not the desired output voltage is greater or less than the input voltage.In this case,the output voltage is 12V with an input voltage from 9V to 15V.The circuit exhibits an efficiency of 75%,with a load regulation of 60mV (10mA to 100mA)and a line regulation of 52mV.R1=(V o −1)R2where R2=10k ΩR3=V/0.75AR4,C1,C3and C4are defined in the “Boost Regulator”section.D1and D2are Schottky type diodes such as the 1N5818or 1N5819.where:V d is the forward voltage drop of the diodes.V sat is the saturation voltage of the LM2578A output transis-tor.V sat1is the saturation voltage of transistor Q1.L1≥(V in −V sat −V sat1)(t on /I p )00871110FIGURE 20.Basic Inverting Regulator00871112V in =5V R4=190ΩV o =−15V R5=82ΩV ripple =5mV R6=220k ΩI o =300mA C1=1820pF I min =60mAC2=1000µFf osc =50kHz C3=20pF R1=160k ΩC4=0.0022µF R2=10k ΩL1=150µH R3=0.01ΩD1=1N5818FIGURE 21.Inverting RegulatorL M 2578A /L M 3578A16。
IRM-2738A中文资料
元器件交易网EVERLIGHT ELECTRONICS CO.,LTD.Technical Data Sheet Infrared Remote-control Receiver ModuleIRM-27xxA SERIESFeatures :• Photo detector and preamplifier in one package • Internal filter for PCM frequency • Improved shielding against electrical field disturbance • TTL and CMOS compatibility • Output active low • Low power consumption • Improved immunity against ambient light • Pb free • The product itself will remain within RoHS compliant version.Descriptions‧The IRM-27xxA SERIES are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. IRM-27xxA SERIES is the standard IR remote control receiver series, supporting all major transmission codes.Applications1. Optical switch 2. Light detecting portion of remote control ․AV instruments such as Audio, TV, VCR, CD, MD, etc. ․Home appliances such as Air-conditioner, Fan , etc. ․The other equipments with wireless remote control. ․CATV set top boxes ․Multi-media EquipmentPART Chip CompoundMATERIAL Silicon EpoxyCOLOR Black BlackEverlight Electronics Co., Ltd. Device No：DMO-027-356http:\\ Prepared date：07-20-2005Rev 2 Prepared by：Page: 1 of 10 Carryll Hsu元器件交易网EVERLIGHT ELECTRONICS CO.,LTD.IRM-27xxA SERIESPackage DimensionsOUT Vcc GNDNotes: 1.All dimensions are in millimeters. 2.Tolerances unless dimensions ±0.3mm.Available Types For Different Carrier FrequenciesType IRM-2733A IRM-2736A IRM-2738A IRM-2740A IRM-2756A Carrier Frequencies(Typ) 32.7 kHz 36.7 kHz 37.9 kHz 40.0 kHz 56.7 kHzEverlight Electronics Co., Ltd. Device No：DMO-027-356http:\\ Prepared date：07-20-2005Rev 2 Prepared by：Page: 2 of 10 Carryll Hsu元器件交易网EVERLIGHT ELECTRONICS CO.,LTD.IRM-27xxA SERIESAbsolute Maximum Ratings (Ta=25℃)Parameter Supply Voltage Operating Temperature Storage Temperature Soldering Temperature Symbol Vcc Topr Tstg Tsol Rating 0~6 -25 ~ +80 -40 ~ +85 260 Unit V ℃ ℃ ℃ 4mm from mold body less than 10 seconds NoticeRecommended Operating ConditionSupply Voltage Rating: Vcc 4.5V to 5.5VElectro-Optical Characteristics (Ta=25℃, and Vcc=5 V)Parameter Consumption Current Peak Wavelength Reception Distance Half Angle(Horizontal) Half Angle(Vertical) High Level Pulse Width Low Level Pulse Width High Level Output Voltage Low Level Output Voltage Symbol Icc λp L0 L45 Θh Θv TH TL VH VL MIN. ----12 6 ----400 400 4.5 --TYP. 1.1 940 ----45 45 ------0.2 MAX. 2.5 ----------800 800 --0.5 deg deg μs μs V V At the ray axis *2 At the ray axis *1 Unit mA nm m Condition No signal input*1:The ray receiving surface at a vertex and relation to the ray axis in the range of θ= 0° and θ=45°. *2:A range from 30cm to the arrival distance. Average value of 50 pulses.Everlight Electronics Co., Ltd. Device No：DMO-027-356http:\\ Prepared date：07-20-2005Rev 2 Prepared by：Page: 3 of 10 Carryll Hsu元器件交易网EVERLIGHT ELECTRONICS CO.,LTD.IRM-27xxA SERIESTest Method：The specified electro-optical characteristics is satisfied under the following Conditions at the controllable distance. Measurement place A place that is nothing of extreme light reflected in the room. External light Project the light of ordinary white fluorescent lamps which are not high Frequency lamps and must be less then 10 Lux at the module surface. (Ee≦10Lux) Standard transmitter A transmitter whose output is so adjusted as to Vo=400mVp-p and the output Wave form shown in Fig.-1.According to the measurement method shown in Fig.-2 the standard transmitter is specified. However , the infrared photodiode to be used for the transmitter should be λp=940nm,∆λ=50nm. Also, photodiode is used of PD438B(Vr=5V). Measuring system According to the measuring system shown in Fig.-3Fig.-1Transmitter Wave FormD.U.T output PulseCarrier frequency is adjusted to center frequency of each product.OUTPUT PULSE OF DEVICEIR TANSMITTER OUTPUT WAVE FORMDuty=0.5Everlight Electronics Co., Ltd. Device No：DMO-027-356http:\\ Prepared date：07-20-2005Rev 2 Prepared by：Page: 4 of 10 Carryll Hsu元器件交易网EVERLIGHT ELECTRONICS CO.,LTD.IRM-27xxA SERIESFig.-2 Measuring Method20cm 10k +5.0± 0.1V 10uFθFig.-3Measuring SystemL: Transmission DistanceVccθOUT D.U.TStandard Transmitter Vout100kStandard TransmitterVout GNDθ: Angle Of Horizontal & Vertical DirectionOscilloscopeBlock Diagram：VCCVoltage Reference CircuitNoise Det.& Gain Ctrl.Band-pass FiterINI-V Converter &Input Bias ControlPre AmpAGC AmpLimit AmpComparatorIntegrator &Wave ShapingOutput StageOUTFset Bias Circuit Frequency Setting Frequency Trimming Threshold Control CircuitGNDApplication Circuit：RC Filter should be connected closely between Vcc pin and GND pin.Everlight Electronics Co., Ltd. Device No：DMO-027-356http:\\ Prepared date：07-20-2005Rev 2 Prepared by：Page: 5 of 10 Carryll Hsu元器件交易网EVERLIGHT ELECTRONICS CO.,LTD.IRM-27xxA SERIESThe Notice of Application:Transmission o remote control signal consist of four parts: Encode Part, IR Transmitter Source, IRM device, Decode Part 1. When IRM-27xxA code select frequency, it need to well understand the center system of encode part. 2. Strong or weak light of IR Transmitter can affect distance of transmission. 3. When using IRM-27xxA device, it requires the composition of code pattern to reach the demand as follows: Minimum Burst Length tburst (number of pulses per burst) : 10 cycles Minimum data pause time: Remocon TX code with Repeat key Remocon Tx code with Full frame RepeatRemocon TX repeat Code with minimum burst lengthTactual , data = Tdata − ∑ (TBn − 150 µs ) Tactual , gap = Tgap − ∑ (TBn − 150 µs )n nTgap ≥ 2.0 ∗ (Tr + 150 µs )Tactual , gap ≥ 2.0 ∗ Tactual ,data4. It needs to ensure the translation range of decode part if it is applied to the pulse-width range. If the above items hardly assure of its application, it’ll cause NG(no good) message from the edge of signal.Everlight Electronics Co., Ltd. Device No：DMO-027-356http:\\ Prepared date：07-20-2005Rev 2 Prepared by：Page: 6 of 10 Carryll Hsu元器件交易网EVERLIGHT ELECTRONICS CO.,LTD.IRM-27xxA SERIESTypical Electro-Optical Characteristics CurvesFig.-4 Relative Spectral Sensitivity vs. Wavelength Fig.-5 Relative Transmission Distance vs. DirectionθFig.-6 Arrival Distance vs. Ambient TemperatureFig.-7 Arrival Distance vs. Supply VoltageFig.-8 Relative Transmission Distance vs. Center Carrier Frequency IRM-2756A IRM-2733A, 2736A, 2738A, 2740ATWL ; Output Pulse Width (µsec)TWL ; Output Pulse Width (µsec)Transmission Distance Lc (m)Transmission Distance Lc (m)Everlight Electronics Co., Ltd. Device No：DMO-027-356http:\\ Prepared date：07-20-2005Rev 2 Prepared by：Page: 7 of 10 Carryll Hsu元器件交易网EVERLIGHT ELECTRONICS CO.,LTD.IRM-27xxA SERIESTypical Electro-Optical Characteristics CurvesFig.-9 Relative Transmission Distance vs. Center Carrier Frequency IRM-2733A IRM-2736ARelative Transmission Distance (%)Relative Transmission Distance (%)Relative Transmission Distance (%)IRM-2738ACenter Carrier Frequency (kHz)Center Carrier Frequency (kHz)Center Carrier Frequency (kHz)IRM-2740ARelative Transmission Distance (%)Relative Transmission Distance (%)IRM-2756ACenter Carrier Frequency (kHz)Center Carrier Frequency (kHz)Everlight Electronics Co., Ltd. Device No：DMO-027-356http:\\ Prepared date：07-20-2005Rev 2 Prepared by：Page: 8 of 10 Carryll Hsu元器件交易网EVERLIGHT ELECTRONICS CO.,LTD.IRM-27xxA SERIES█ Reliability Test Item And ConditionThe reliability of products shall be satisfied with items listed below. Confidence level: 90% LTPD: 10%Test ItemsTest Conditions 1 cycle -40℃ +25℃ +85℃ (30min)(5min)(30min) 300 cycle testFailure Judgement CriteriaSamples(n) Defective(c)Temperature cyclen=22,c=0Temp: +85℃ High temperature test Vcc:5V 1000hrs Low temperature storage High temperature High humidity Temp: -40℃ 1000hrs Ta: 85℃,RH: 85% 1000hrs Temp: 260±5℃ 10sec 4mm From the bottom of the package.n=22,c=0 L0≦ L×0.8 L45≦ L×0.8 n=22,c=0 L: Lower specification limit n=22,c=0Solder heatn=22,c=0Everlight Electronics Co., Ltd. Device No：DMO-027-356http:\\ Prepared date：07-20-2005Rev 2 Prepared by：Page: 9 of 10 Carryll Hsu元器件交易网EVERLIGHT ELECTRONICS CO.,LTD.IRM-27xxA SERIESPacking Quantity Specification1. 1500PCS/1Box 2. 10Boxes/1CartonLabel Form SpecificationCPN: Customer’s Production Number P/N : Production Number QTY: Packing Quantity CAT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number MADE IN TAIWAN: Production PlaceRoHSIRM-2738ANotes1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.EVERLIGHT ELECTRONICS CO., LTD. Office: No 25, Lane 76, Sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.CTel: 886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\Everlight Electronics Co., Ltd. Device No：DMO-027-356http:\\ Prepared date：07-20-2005Rev 2 Prepared by：Page: 10 of 10 Carryll Hsu。
2732资料
● The ferrite core is a slim EE50-type, leading to a maximum transformer height of 28mm above the PCB
38.1
18.5 25 20 15 15 16.25 16.25 15 20 16.25 20.32 20.32 27
Pitch Power Input (mm) @ 50 kHz (W)
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● Maximum horizontal dimensions: 51mm x 52mm
Options
● Customized electrical design and pinout
SLOT SMT 100
Series 2642 – Resonant-Type Power Supply Switch-Mode Transformer
SWITCH-MODE TRANSFORMER GUIDE BY TECHNOLOGY
Ferrite
E30/15/7 ETD29X16X10 ETD29X15X10 ETD29X11X10 ETD34X13X11 ETD34X17X11 ETD39X17X13 ER48X18X18 ER54X20X18
AM83135-040中文资料
.310 x .310 2LFL (S064) hermetically sealed ORDER CODE AM83135-040 BRANDING AM83135-40
DESCRIPTION The AM83135-040 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications. This device is characterized at 10µsec pulse width and 10% duty cycle, but is capable of operation over a range of pulse widths, duty cycles, and temperatures, and can withstand a 3:1 output VSWR with a + 1 dB input overdrive. Low RF thermal resistance, refractory/gold metallization, and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM83135-040 is supplied in the IMPAC™ Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications. ABSOLUTE MAXIMUM RATINGS (T case = 25°C)
常用全系列场效应管
常用全系列场效应管M OS管型号参数封装资料场效应管分类型号简介封装DIS CRETEMOSFET 2N7000 60V,0.115A TO-92DIS CRETEMOSFET 2N7002 60V,0.2A SOT-23DI SCRET EMOS FETI RF510A 100V,5.6A TO-220D ISCRE TEMO S FETIRF520A 100V,9.2A TO-220DISCR ETEM OS FE T IRF530A 100V,14A TO-220DISC RETEMOS F ET IRF540A 100V,28A T O-220DIS CRETEMOSFET IR F610A200V,3.3A TO-220DI SCRET EMOS FETI RF620A 200V,5A TO-220D ISCRE TEMO S FETIRF630A 200V,9A TO-220DISCR ETEM OS FE T IRF634A 250V,8.1A TO-220DISC RETEMOS F ET IRF640A 200V,18A T O-220DIS CRETEMOSFET IR F644A250V,14A TO-220DI SCRET EMOS FETI RF650A 200V,28A TO-220D ISCRE TEMO S FETIRF654A 250V,21A TO-220DISCR ETEM OS FE T IRF720A 400V,3.3A TO-220DISC RETEMOS F ET IRF730A 400V,5.5A T O-220 DIS CRETEMOSFET IR F740A400V,10A TO-220 DI SCRET EMOS FETI RF750A 400V,15A TO-220 D ISCRE TEMO S FETIRF820A 500V,2.5A TO-220 DISCR ETEM OS FE T IRF830A 500V,4.5A TO-220DISC RETEMOS F ET IRF840A 500V,8AT O-220 DIS CRETEMOSFET IR F9520TO-220DI SCRET EMOS FETI RF9540 TO-220D ISCRE TEMO S FETIRF9610 TO-220DISCR ETEM OS FE T IRF9620 TO-220DISC RETEMOS F ET IRF P150A 100V,43A T O-3PDISC RETEMOS F ET IRF P250A 200V,32A T O-3PDISC RETEMOS F ET IRF P450A 500V,14A T O-3PDISC RETEMOS F ET IRF R024A 60V,15AD-PAKDISC RETEMOS F ET IRF R120A 100V,8.4A D-PAKDISC RETEMOS F ET IRF R214A 250V,2.2A D-PAKDISC RETEMOS F ET IRF R220A 200V,4.6A D-PAKDISC RETEMOS F ET IRF R224A 250V,3.8A D-PAKDISC RETEMOS F ET IRF R310A 400V,1.7A D-PAKDISC RETEMOS F ET IRF R9020TF D-PAKDISC RETEMOS F ET IRF S540A 100V,17A T O-220F DI SCRET EMOS FETI RFS630A 200V,6.5A TO-220F DISCR ETEM OS FE T IRFS634A 250V,5.8A TO-220F DIS CRETEMOSFET IR FS640A 200V,9.8A TO-220F D ISCRE TEMO S FETIRFS644A 250V,7.9A TO-220FDISC RETEMOS F ET IRF S730A 400V,3.9A T O-220F DI SCRET EMOS FETI RFS740A 400V,5.7A TO-220F DISCR ETEM OS FE T IRFS830A 500V,3.1A TO-220F DIS CRETEMOSFET IR FS840A 500V,4.6A TO-220F D ISCRE TEMO S FETIRFS9Z34 -60V,12A TO-220FDISC RETEMOS F ET IRF SZ24A 60V,14AT O-220FDI SCRET EMOS FETI RFSZ34A 60V,20A TO-220FDISCR ETEM OS FE T IRFU110A 100V,4.7A I-PAKDISCR ETEM OS FE T IRFU120A 100V,8.4A I-PAKDISCR ETEM OS FE T IRFU220A 200V,4.6A I-PAKDISCR ETEM OS FE T IRFU230A 200V,7.5A I-PAKDISCR ETEM OS FE T IRFU410A 500V I-PAKDISC RETEMOS F ET IRF U420A 500V,2.3A I-PAKDIS CRETEMOSFET IR FZ20A TO-220D ISCRE TEMO S FETIRFZ24A 60V,17A TO-220DISC RETEMOS F ET IRF Z30 TO-220DI SCRET EMOS FETI RFZ34A 60V,30A TO-220DISCR ETEM OS FE T IRFZ40 T O-220DIS CRETEMOSFET IR FZ44A60V,50A TO-220D ISCRE TEMO S FETIRLS530A 100V,10.7A,Log ic T O-220F DI SCRET EMOS FETI RLSZ14A 60V,8A,Log ic TO-220F D ISCRE TEMO S FETIRLZ24A 60V,17A,L ogic TO-220 D ISCRE TEMO S FETIRLZ44A 60V,50A,L ogic TO-220 D ISCRE TEMO S FETSFP36N03 30V,36A TO-220DISCR ETEM OS FE T SFP65N06 60V,65A TO-220DISC RETEMOS F ET SFP9540 -100V,17A T O-220DIS CRETEMOSFET SF P9634-250V,5A TO-220DI SCRET EMOS FETS FP9644 -250V,8.6A TO-220D ISCRE TEMO S FETSFP9Z34 -60V,18A TO-220DISCR ETEM OS FE T SFR9214 -250V,1.53A D-PAKDISC RETEMOS F ET SFR9224 -250V,2.5A D-PAKDIS CRETEMOSFET SF R9310 -400V,1.5A D-PA KDI SCRET EMOS FETS FS9630 -200V,4.4A TO-220FDISC RETEMOS F ET SFS9634 -250V,3.4A TO-220FD ISCRE TEMO S FETSFU9220 -200V,3.1A I-PAKDISCR ETEM OS FE T SSD2002 25V N/P Du al 8SOPDISC RETEMOS F ET SSD2019 20VP-chDual 8SOP DIS CRETEMOSFET SS D2101 30V N-ch Sing le 8SOP DISCR ETEM OS FE T SSH10N80A 800V,10A TO-3P DISCR ETEM OS FE T SSH10N90A 900V,10A TO-3P DISCR ETEM OS FE T SSH5N90A 900V,5A TO-3P DISCR ETEM OS FE T SSH60N10 TO-3PDISCR ETEM OS FE T SSH6N80A 800V,6A TO-3P DISCR ETEM OS FE T SSH70N10A 100V,70A TO-3P DISCR ETEM OS FE T SSH7N90A 900V,7A TO-3P DISCR ETEM OS FE T SSH9N80A 800V,9A TO-3P DISCR ETEM OS FE T SSP10N60A 600V,9A TO-220DISC RETEMOS F ET SSP1N60A 600V,1AT O-220 DIS CRETEMOSFET SS P2N90A 900V,2A TO-220 DI SCRET EMOS FETS SP35N03 30V,35A TO-220 D ISCRE TEMO S FETSSP3N90A 900V,3A TO-220 DISCR ETEM OS FE T SSP4N60A 600V,4A TO-220DISC RETEMOS F ET SSP4N60A S 600V,4AT O-220 DIS CRETEMOSFET SS P4N90AS 900V,4.5A TO-220 D ISCRE TEMO S FETSSP5N90A 900V,5A TO-220D ISCRE TEMO S FETSSP60N06 60V,60A TO-220D ISCRE TEMO S FETSSP6N60A 600V,6A TO-220D ISCRE TEMO S FETSSP70N10A 100V,55A TO-220 D ISCRE TEMO S FETSSP7N60A 600V,7A TO-220D ISCRE TEMO S FETSSP7N80A 800V,7A TO-220D ISCRE TEMO S FETSSP80N06A 60V,80A TO-220 D ISCRE TEMO S FETSSR1N60A 600V,0.9A D-P AK D ISCRE TEMO S FETSSR2N60A 600V,1.8A D-P AK D ISCRE TEMO S FETSSR3055A 60V,8A D-P AKD ISCRE TEMO S FETSSS10N60A 600V,5.1A TO-220FDISC RETEMOS F ET SSS2N60A 600V,1.3A T O-220F DI SCRET EMOS FETS SS3N80A 800V,2A TO-220FDISCR ETEM OS FE T SSS3N90A 900V,2A TO-220FDISC RETEMOS F ET SSS4N60A 600V,3.5A T O-220(F/P) DIS CRETEMOSFET SS S4N60AS 600V,2.3A TO-220(F/P) DI SCRET EMOS FETS SS4N60AS 600V,2.3A TO-220FDISCR ETEM OS FE T SSS4N90AS 900V,2.8A TO-220FDIS CRETEMOSFET SS S5N80A 800V,3A TO-220FD ISCRE TEMO S FETSSS6N60A 600V, TO-220(F/P)常用贴片三极管查询贴片三极管型号查询直插封装的型号贴片的型号9011 1T9012 2T9013 J39014J69015 M69016 Y69018 J8S8050 J3YS8550 2T Y8050 Y18550Y22S A1015 BA2SC1815 HF2SC945 CRMMBT3904 1AMMM BT3906 2AMMBT2222 1PMMB T5401 2LM MBT5551 G1MMBT A42 1DMMB TA922DBC807-16 5ABC807-25 5BBC807-40 5CB C817-16 6ABC817-256BBC817-40 6CBC846A 1ABC846B 1BBC847A 1EBC847B 1FBC847C 1GBC848A 1JBC848B 1KBC848C 1LBC856A 3ABC856B 3BBC857A 3EBC857B 3FBC858A 3JBC858B 3KBC858C 3L2SA733 CSUN2111 V1UN2112 V2UN2113 V3UN2211 V4UN2212 V5UN2213 V62SC3356 R232SC3838AD2N7002702回答人的补充2010-02-0117:31 Stem pel TypHerst.Ba seG eh?us eSt andar d Ver gleic hstypJ0HSM S-2840HPCSOT23sch ottky diod eJ01S O2906RN2N2906J03S O2907ARR2N2907AJ05SO2907RR2N2907J1HSMS-2841HPKSO T23schot tky d iodeJ1ZC830Ze tCZC820 v arica ps J1B SS138LMo tMSOT23n-ch en h TMO S fet J12SO2906A RR2N2906AJ1AZC830AZe tCSOT23va ricap hype rabru pt 28V 10p F@2VJ1BZC830BZetCSO T23varic ap hy perab rupt28V 10pF@2V J2ZC833ZetCSO T23ZC823J2AZC833AZetCS OT23vari cap h ypera brupt 28V33pF@2V J2BZC833BZe tCSOT23va ricap hype rabru pt 28V 33p F@2VJ3ZC831Ze tCSOT23ZC821J32SO5400RSGSR2N5400J33S O5401RSG SR2N5401J39SO692RSGSp np Vc e 300VJ3AZ C831AZetCSOT23var icaphyper abrup t 28V 15pF@2V J3BZC831BZ etCSOT23v arica p hyp erabr upt 28V 15pF@2V J3DMS B81T1Motvhfpnp f T 0.6GHzJ4ZC832ZetCSOT23ZC823J4AMBV109Mo tCSOT2329pF VH F var icapdiodeJ4AZC832AZetCS OT23vari cap h ypera brupt 28V22pF@2V J4BZC832BZe tCSOT23va ricap hype rabru pt 28V 22p F@2VJ5ZC834Ze tCSOT23ZC824。
am08模块参数
am08模块参数随着科技的发展，电子元器件的性能与功能越来越强大，而模块作为其中的重要组成部分，其参数设置对于整体性能的影响不容忽视。
本文将针对AM08模块参数进行深入探讨，以期为相关领域的从业者提供有价值的参考。
一、AM08模块简介AM08模块是一款由知名制造商开发的多功能模块，广泛应用于各种电子设备中。
该模块具有高度的集成度和稳定性，可满足多种复杂应用的需求。
了解AM08模块的参数，有助于更好地发挥其性能，提高设备的整体表现。
二、AM08模块参数详解1.工作电压与电流AM08模块的工作电压范围为9V-36V，而工作电流则根据不同型号有所差异。
在实际使用过程中，应确保模块的工作电压与电流在合理范围内，以避免对模块造成损坏。
2.输入与输出接口AM08模块支持多种类型的输入与输出接口，如I2C、SPI、UART 等。
这些接口可实现与其他模块或设备的无缝连接，提高系统的整体性能。
3.工作温度AM08模块的工作温度范围为-40℃-85℃。
在高温环境下使用时，应注意散热问题，以保证模块的正常运行。
4.尺寸与重量AM08模块的尺寸与重量根据不同型号有所差异。
在选择模块时，应充分考虑其安装空间及设备重量限制。
5.保护功能AM08模块具备过流、过压、欠压等保护功能，可在异常情况下自动切断电源，保护设备免受损坏。
三、参数配置注意事项1.正确配置电压与电流：根据设备需求选择合适的电压与电流范围，避免对AM08模块造成过载或欠载。
2.选择合适的接口类型：根据与其他模块或设备的连接需求，选择合适的输入与输出接口类型。
3.注意工作温度范围：在高或低温度环境下使用时，应确保设备散热良好，避免因过热而导致性能下降或损坏。
4.考虑尺寸与重量因素：在满足性能需求的前提下，尽量选择尺寸较小、重量较轻的模块，以便于设备的集成与搬运。
5.利用保护功能：熟悉并充分利用AM08模块的保护功能，确保设备在异常情况下能够得到及时保护。
四、总结通过对AM08模块参数的深入探讨，我们对其性能特点有了更全面的了解。
M2732A中文资料
Figure 1. Logic DiagramM2732ANMOS 32K (4K x 8) UV EPROMFAST ACCESS TIME: 200nsEXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max INPUTS and OUTPUTS TTL COMPATIBLE DURING READ and PROGRAM COMPLETELY STATICDESCRIPTIONThe M2732A is a 32,768 bit UV erasable and electrically programmable memory EPROM. It is organized as 4,096 words by 8 bits. The M2732A with its single 5V power supply and with an access time of 200 ns, is ideal suited for applications where fast turn around and pattern experimentation one important requirements.The M2732A is honsed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can be then written to the clerice by following the programmingprocedure.Table 1. Signal NamesJuly 19941/9Figure 2. DIP Pin ConnectionsNote: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents.Table 2. Absolute Maximum RatingsDEVICE OPERATIONThe six modes of operation for the M2732A are listed in the Operating Modes Table. A single 5V power supply is required in the read mode. All inputs are TTL level except for V PP . Read ModeThe M2732A has two control functions, both of which must be logically satisfied in order to obtain data at the outputs. Chip Enable (E) is the power control and should be used for device selection.Output Enable (G) is the output control and shouldbe used to gate data to the output pins, inde-pendent of device selection.Assuming that the addresses are stable, address access time (t AVAQ ) is equal to the delay from E to output (t ELQV ). Data is available at the outputs after the falling edge of G, assuming that E has been low and the addresses have been stable for at least t AVQV -t GLQV .Standby ModeThe M2732A has a standby mode which reduces the active power current by 70 %, from 125 mA to 35 mA. The M2732A is placed in the standby mode by applying a TTL high signal to E input. When in standby mode, the outputs are in a high impedance state, independent of the GV PP input.Two Line Output ControlBecause M2732A’s are usually used in larger mem-ory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows:a. the lowest possible memory power dissipation,b. complete assurance that output bus contention will not occur.To most efficiently use these two control lines, it is recommended that E be decoded and used as the be made a common connection to all devices in the array and connected to the READ line from the system control bus.This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device.ProgrammingWhen delivered, and after each erasure, all bits of the M2732A are in the “1" state. Data is introduced by selectively programming ”0’s" into the desired bit locations. Although only “0’s” will be pro-grammed, both “1’s” and “0’s” can be presented in the data word. The only way to change a “0" to a ”1" is by ultraviolet light erasure.The M2732A is in the programming mode when the GV PP input is at 21V. A 0.1µF capacitor must be placed across GV PP and ground to suppress spu-rious voltage transients which may damage the device. The data to be programmed is applied, 8 bits in parallel, to the data output pins. The levels required for the address and data inputs are TTL. When the address and data are stable, a 50ms, active low, TTL program pulse is applied to the E input. A program pulse must be applied at each address location to be programmed. Any location can be programmed at any time - either individually, sequentially, or at random. The program pulse has a maximum width of 55ms. The M2732A must not be programmed with a DC signal applied to the E input.Programming of multiple M2732As in parallel with the same data can be easily accomplished due to the simplicity of the programming requirements. Inputs of the paralleled M2732As may be con-nected together when they are programmed with the same data. A low level TTL pulse applied to the E input programs the paralleled 2732As. Program InhibitProgramming of multiple M2732As in parallel with different data is also easily accomplished. Except for E, all like inputs (including GV PP) of the parallel M2732As may be common. A TTL level program pulse applied to a M2732A’s E input with GV PP at 21V will program that M2732A. A high level E input inhibits the other M2732As from being pro-grammed.Program VerifyA verify should be performed on the programmed bits to determine that they were correctly pro-grammed. The verify is carried out with GV PP and E at V IL.ERASURE OPERATIONThe erasure characteristics of the M2732A are such that erasure begins when the cells are ex-posed to light with wavelengths shorter than ap-proximately 4000 Å. It should be noted that sunlight and certain types of fluorescent lamps have wave-lengths in the 3000-4000 Å range. Research shows that constant exposure to room level fluorescent lighting could erase a typical M2732A in approxi-mately 3 years, while it would take approximately 1 week to cause erasure when exposed to the direct sunlight. If the M2732A is to be exposed to these types of lighting conditions for extended pe-riods of time, it is suggested that opaque labels be put over the M2732A window to prevent uninten-tional erasure.The recommended erasure procedure for the M2732A is exposure to shortwave ultraviolet light which has a wavelength of 2537 Å. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 15 W-sec/cm2. The era-sure time with this dosage is approximately 15 to 20 minutes using an ultraviolet lamp with 12000µW/cm2 power rating. The M2732A should be placed within 2.5 cm of the lamp tubes during erasure. Some lamps have a filter on their tubes which should be removed before erasure.IH ILTable 3. Operating ModesFigure 3. AC Testing Input Output WaveformsInput Rise and Fall Times ≤ 20ns Input Pulse Voltages0.45V to 2.4V Input and Output Timing Ref. Voltages0.8V to 2.0VAC MEASUREMENT CONDITIONSFigure 4. AC Testing Load CircuitNote that Output Hi-Z is defined as the point where data is no longer driven.Note: 1.Sampled only, not 100% tested.Table 4. Capacitance (1) (T A = 25 °C, f = 1 MHz )Figure 5. Read Mode AC WaveformsCC PP PP 2.Sampled only, not 100% tested.Table 6. Read Mode AC Characteristics (1)(T A = 0 to 70 °C or –40 to 85 °C; V CC = 5V ± 5% or 5V ± 10%; V PP = V CC)CC PP PP Table 5. Read Mode DC Characteristics (1)(T A = 0 to 70 °C or –40 to 85 °C; V CC = 5V ± 5% or 5V ± 10%; V PP = V CC )Note: 1.V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .Table 7. Programming Mode DC Characteristics (1)(T A = 25 °C; V CC = 5V ± 5%; V PP = 21V ± 0.5V)Note: 1.V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP .Table 8. Programming Mode AC Characteristics (1)(T A = 25 °C; V CC = 5V ± 5%; V PP = 21V ± 0.5V)Figure 6. Programming and Verify Modes AC Waveforms-2200 ns, 5V ±5% blank 250 ns, 5V ±5% -3 300 ns, 5V ±5% -4 450 ns, 5V ±5% -20200 ns, 5V ±10%-25250 ns, 5V ±10%FFDIP24W10 to 70 °C 6–40 to 85 °CORDERING INFORMATION SCHEMEcatalogue.For further information on any aspect of this device, please contact SGS-THOMSON Sales Office nearest to you.FDIP24WDrawing is not to scaleInformation furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.© 1994 SGS-THOMSON Microelectronics - All Rights ReservedSGS-THOMSON Microelectronics GROUP OF COMPANIESAustralia - Brazil - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.。
功率放大器模块PAM08说明书20191025
Full temp range F＜60Hz
Full temp range
Full temp range
-40
PAM08 Typ Max
1 1.25 13 85
Units ℃/W ℃/W ℃/W
℃
6.安全工作区域
PAM08 的 MOSFET 输出不受 BJT 的二次击穿考虑的限制。但是，安全工作区域需要考虑温度因素和电流处理能力。
-Vs+7
170 1 5
Units V V
V
V
A V/μs
μs Ω
5.5 电源
Parameter
Voltage Current, quiescent
Test Condition Min ±15
PAM08
Typ Max
±75 ±100
50
65
Units V mA
4
深圳市优测科技有限公司
Units V V V A W V V ℃ ℃ ℃ ℃
5.2 输入
Parameter Offset voltage Offset voltage vs temperature Offset voltage vs supply Bias current, initial Bias current vs supply Offset current, initial Input resistance, DC Input capacitance Common mode voltage range Common mode voltage range Common mode rejection, DC Noise
Symbol +Vs to -Vs
+VB -VB Io PD
LM2738资料
April 10, 2008 LM2738550kHz/1.6MHz 1.5A Step-Down DC-DC Switching RegulatorGeneral DescriptionThe LM2738 regulator is a monolithic, high frequency, PWM step-down DC/DC converter in an 8-pin LLP or 8-pin eMSOP package. It provides all the active functions for local DC/DC conversion with fast transient response and accurate regula-tion in the smallest possible PCB area.With a minimum of external components, the LM2738 is easy to use. The ability to drive 1.5A loads with an internal 250mΩ NMOS switch using state-of-the-art 0.5µm BiCMOS technology results in the best power density available. Switching frequency is internally set to 550kHz (LM2738Y) or 1.6MHz (LM2738X), allowing the use of extremely small sur-face mount inductors and chip capacitors. Even though the operating frequencies are very high, efficiencies up to 90% are easy to achieve. External enable is included, featuring an ultra-low stand-by current of 400nA. The LM2738 utilizes cur-rent-mode control and internal compensation to provide high-performance regulation over a wide range of operating conditions. Additional features include internal soft-start cir-cuitry to reduce in-rush current, cycle-by-cycle current limit, thermal shutdown, and output over-voltage protection.Features■Space Saving LLP-8 and eMSOP-8 package ■ 3.0V to 20V input voltage range■0.8V to 18V output voltage range■ 1.5A output current■550kHz (LM2738Y) and 1.6MHz (LM2738X) switching frequencies■250mΩ NMOS switch■400nA shutdown current■0.8V, 2% internal voltage reference■Internal soft-start■Current-Mode, PWM operation■Thermal shutdownApplications■Local Point of Load Regulation■Core Power in HDDs■Set-Top Boxes■Battery Powered Devices■USB Powered Devices■DSL ModemsTypical Application Circuit30049101Efficiency vs Load Current VIN= 12V, VOUT= 3.3V30049145© 2008 National Semiconductor LM2738 550kHz/1.6MHz 1.5A Step-Down DC-DC Switching RegulatorConnection Diagrams300491618-Pin LLP - TOP VIEW NS Package Number SDA08A300491638-Pin eMSOP - TOP VIEW NS Package Number MUY08AOrdering InformationOrder Number Frequency Option Package TypeNSC Package DrawingPackage MarkingSupplied As LM2738XSD 1.6MHz8-Lead LLPSDA08AL237B1000 Tape and Reel LM2738XSDX 4500 Tape and Reel LM2738YSD 0.55MHz L174B 1000 Tape and Reel LM2738YSDX 4500 Tape and Reel LM2738XMY 1.6MHz8-Lead eMSOPMUY08ASTDB1000 Tape and Reel LM2738XMYX 3500 Tape and Reel LM2738YMY 0.55MHzSJBB1000 Tape and Reel LM2738YMYX3500 Tape and Reel* Contact the local sales office for the lead-free package.Pin DescriptionsPin Name Function1BOOST Boost voltage that drives the internal NMOS control switch. Abootstrap capacitor is connected between the BOOST and SW pins.2V IN Supply voltage for output power stage. Connect a bypass capacitor to this pin. Must tie pins 2 and 3 together at package.3V CC Input supply voltage of the IC. Connect a bypass capacitor to this pin.Must tie pin 2 and 3 together at the package.4EN Enable control input. Logic high enables operation. Do not allow this pin to float or be greater than V IN + 0.3V.5, 7GND Signal and power ground pins. Place the bottom resistor of the feedback network as close as possible to these pins.6FBFeedback pin. Connect FB to the external resistor divider to set output voltage.8SW Output switch. Connects to the inductor, catch diode, and bootstrap capacitor.DAPGNDSignal and power ground. Must be connected to GND on the PCB. 2L M 2738Absolute Maximum Ratings (Note 1)If Military/Aerospace specified devices are required,please contact the National Semiconductor Sales Office/Distributors for availability and specifications.V IN , V CC-0.5V to 24V SW Voltage -0.5V to 24V Boost Voltage-0.5V to 30V Boost to SW Voltage -0.5V to 6.0V FB Voltage -0.5V to 3.0VEN Voltage-0.5V to (V IN + 0.3V)Junction Temperature150°C ESD Susceptibility (Note 2)2kVStorage Temp. Range-65°C to 150°CSoldering InformationInfrared/Convection Reflow (15sec)220°C Wave Soldering Lead Temp. (10sec)260°COperating Ratings(Note 1)V IN , V CC3V to 20V SW Voltage -0.5V to 20V Boost Voltage-0.5V to 25.5V Boost to SW Voltage2.5V to 5.5V Junction Temperature Range−40°C to +125°CThermal Resistance θJA for LLP/eMSOP(Note 3)60°C/W Thermal Shutdown (Note 3)165°CElectrical CharacteristicsSpecifications with standard typeface are for T J = 25°C, and those in boldface type apply over the full Operating Temperature Range (T J = -40°C to 125°C). V IN = 12V, V BOOST - V SW = 5V unless otherwise specified. Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.Symbol ParameterConditionsMin (Note 4)Typ (Note 5)Max (Note 4)Units V FB Feedback Voltage0.7840.8000.816V ΔV FB /ΔV IN Feedback Voltage Line Regulation V IN = 3V to 20V0.02 % / V I FB Feedback Input Bias Current Sink/Source 0.1100nAUVLOUndervoltage Lockout V IN Rising 2.7 2.90V Undervoltage Lockout V IN Falling 2.02.3 UVLO Hysteresis0.4 F SW Switching Frequency LM2738X 1.28 1.6 1.92MHz LM2738Y0.3640.550.676D MAX Maximum Duty Cycle LM2738X , Load=150mA 92 %LM2738Y, Load=150mA 95 D MIN Minimum Duty Cycle LM2738X 7.5 %LM2738Y2 R DS(ON)Switch ON Resistance V BOOST - V SW = 3V,Load=400mA250500m ΩI CL Switch Current Limit V BOOST - V SW = 3V, V IN = 3V 2.0 2.9 A I QQuiescent CurrentSwitching 1.93mA Non-Switching 1.9 mA Quiescent Current (shutdown)V EN = 0V400 nA I BOOST Boost Pin CurrentLM2738X (27% Duty Cycle) 4.5 mA LM2738Y (27% Duty Cycle) 2.5 V EN_TH Shutdown Threshold Voltage V EN Falling -0.4V Enable Threshold Voltage V EN Rising 1.4- I EN Enable Pin Current Sink/Source 10 nA I SWSwitch LeakageV IN = 20V100nA Note 1:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see Electrical Characteristics.Note 2:Human body model, 1.5k Ω in series with 100pF.Note 3:Typical thermal shutdown will occur if the junction temperature exceeds 165°C. The maximum power dissipation is a function of T J(MAX) , θJA and T A .The maximum allowable power dissipation at any ambient temperature is P D = (T J(MAX) – T A )/θJA . All numbers apply for packages soldered directly onto a 3” x 3” PC board with 2 oz. copper on 4 layers in still air in accordance to JEDEC standards. Thermal resistance varies greatly with layout, copper thicknes, number of layers in PCB, power distribution, number of thermal vias, board size, ambient temperature, and air flow.Note 4:Guaranteed to National’s Average Outgoing Quality Level (AOQL).Note 5:Typicals represent the most likely parametric norm.LM2738Typical Performance CharacteristicsAll curves taken at V IN = 12V, V BOOST - V SW = 5V, and T A = 25°C,unless specified otherwise.Efficiency vs Load Current - "X" V OUT = 5V30049197Efficiency vs Load Current - "Y" V OUT = 5V30049198Efficiency vs Load Current - "X" V OUT = 3.3V 30049151Efficiency vs Load Current - "Y" V OUT = 3.3V30049152Efficiency vs Load Current - "X" V OUT = 1.5V 30049199Efficiency vs Load Current - "Y" V OUT = 1.5V30049131 4L M 2738Typical Performance CharacteristicsAll curves taken at V IN = 12V, V BOOST - V SW = 5V, and T A = 25°C,unless specified otherwise.Oscillator Frequency vs Temperature - "X"30049127Oscillator Frequency vs Temperature - "Y"30049128Current Limit vs TemperatureV IN = 5V30049129I Q Non-Switching vs Temperature30049147V FB vs Temperature 30049133R DSON vs Temperature30049130LM2738Typical Performance CharacteristicsAll curves taken at V IN = 12V, V BOOST - V SW = 5V, and T A = 25°C,unless specified otherwise.Line Regulation - "X" (V OUT = 1.5V, I OUT = 750mA)30049156Line Regulation - "Y" (V OUT = 1.5V, I OUT = 750mA)30049154Line Regulation - "X" (V OUT = 3.3V, I OUT = 750mA)30049155Line Regulation - "Y" (V OUT = 3.3V, I OUT = 750mA)30049153Load Regulation - "X" (V OUT = 1.5V)30049176Load Regulation - "Y" (V OUT = 1.5V)30049175 6L M 2738Typical Performance CharacteristicsAll curves taken at V IN = 12V, V BOOST - V SW = 5V, and T A = 25°C,unless specified otherwise.Load Regulation - "X" (V OUT = 3.3V)30049177Load Regulation - "Y" (V OUT = 3.3V)30049178I Q Switching vs Temperature 30049146Load Transient - "X" (V OUT = 3.3V, V IN = 12V)30049194Startup - "X"(V OUT = 3.3V, V IN = 12, I OUT =1.5A (Resistive Load))30049190In-Rush Current - "X"(V OUT = 3.3V, V IN = 12V, I OUT =1.5A (Resistive Load) )30049191LM2738Block Diagram30049106FIGURE 1. Simplified Internal Block DiagramApplication InformationTHEORY OF OPERATIONThe LM2738 is a constant frequency PWM buck regulator IC that delivers a 1.5A load current. The regulator has a preset switching frequency of either 550kHz (LM2738Y) or 1.6MHz (LM2738X). These high frequencies allow the LM2738 to op-erate with small surface mount capacitors and inductors,resulting in DC/DC converters that require a minimum amount of board space. The LM2738 is internally compensated, so it is simple to use, and requires few external components. The LM2738 uses current-mode control to regulate the output voltage.The following operating description of the LM2738 will refer to the Simplified Block Diagram (Figure 1) and to the wave-forms in Figure 2. The LM2738 supplies a regulated output voltage by switching the internal NMOS control switch at con-stant frequency and variable duty cycle. A switching cycle begins at the falling edge of the reset pulse generated by the internal oscillator. When this pulse goes low, the output con-trol logic turns on the internal NMOS control switch. During this on-time, the SW pin voltage (V SW ) swings up to approxi-mately V IN , and the inductor current (I L ) increases with a linear slope. I L is measured by the current-sense amplifier, which generates an output proportional to the switch current. The sense signal is summed with the regulator’s corrective ramp and compared to the error amplifier’s output, which is propor-tional to the difference between the feedback voltage and V REF . When the PWM comparator output goes high, the out-put switch turns off until the next switching cycle begins.During the switch off-time, inductor current discharges through Schottky diode D1, which forces the SW pin to swingbelow ground by the forward voltage (V D ) of the catch diode.The regulator loop adjusts the duty cycle (D) to maintain a constant output voltage.30049107FIGURE 2. LM2738 Waveforms of SW Pin Voltage andInductor Current BOOST FUNCTIONCapacitor C BOOST and diode D2 in Figure 3 are used to gen-erate a voltage V BOOST . V BOOST - V SW is the gate drive voltage to the internal NMOS control switch. To properly drive the in-ternal NMOS switch during its on-time, V BOOST needs to be at least 2.5V greater than V SW . It is recommended that V BOOST be greater than 2.5V above V SW for best efficiency. V BOOST –V SW should not exceed the maximum operating limit of 5.5V.8L M 27385.5V > V BOOST – V SW > 2.5V for best performance.When the LM2738 starts up, internal circuitry from the BOOST pin supplies a maximum of 20mA to C BOOST . This current charges C BOOST to a voltage sufficient to turn the switch on. The BOOST pin will continue to source current to C BOOST until the voltage at the feedback pin is greater than 0.76V.There are various methods to derive V BOOST :1.From the input voltage (3.0V < V IN < 5.5V)2.From the output voltage (2.5V < V OUT < 5.5V)3.From an external distributed voltage rail (2.5V < V EXT <5.5V)4.From a shunt or series zener diodeIn the Simplifed Block Diagram of Figure 1, capacitor C BOOST and diode D2 supply the gate-drive voltage for the NMOS switch. Capacitor C BOOST is charged via diode D2 by V IN . During a normal switching cycle, when the internal NMOS control switch is off (T OFF ) (refer to Figure 2), V BOOST equals V IN minus the forward voltage of D2 (V FD2), during which the current in the inductor (L) forward biases the Schottky diode D1 (V FD1). Therefore the voltage stored across C BOOST isV BOOST - V SW = V IN - V FD2 + V FD1When the NMOS switch turns on (T ON ), the switch pin rises toV SW = V IN – (R DSON x I L ),forcing V BOOST to rise thus reverse biasing D2. The voltage at V BOOST is thenV BOOST = 2V IN – (R DSON x I L ) – V FD2 + V FD1which is approximately2V IN - 0.4Vfor many applications. Thus the gate-drive voltage of the NMOS switch is approximatelyV IN - 0.2VAn alternate method for charging C BOOST is to connect D2 to the output as shown in Figure 3. The output voltage should be between 2.5V and 5.5V, so that proper gate voltage will be applied to the internal switch. In this circuit, C BOOST provides a gate drive voltage that is slightly less than V OUT .30049108FIGURE 3. V OUT Charges C BOOSTIn applications where both V IN and V OUT are greater than 5.5V, or less than 3V, C BOOST cannot be charged directly from these voltages. If V IN and V OUT are greater than 5.5V,C BOOST can be charged from V IN or V OUT minus a zener volt-age by placing a zener diode D3 in series with D2, as shown in Figure 4. When using a series zener diode from the input,ensure that the regulation of the input supply doesn’t create a voltage that falls outside the recommended V BOOST voltage.(V INMAX – V D3) < 5.5V(V INMIN – V D3) > 2.5V30049109FIGURE 4. Zener Reduces Boost Voltage from V IN An alternative method is to place the zener diode D3 in a shunt configuration as shown in Figure 5. A small 350mW to 500mW 5.1V zener in a SOT-23 or SOD package can be used for this purpose. A small ceramic capacitor such as a 6.3V,0.1µF capacitor (C4) should be placed in parallel with the zener diode. When the internal NMOS switch turns on, a pulse of current is drawn to charge the internal NMOS gate capac-itance. The 0.1 µF parallel shunt capacitor ensures that the V BOOST voltage is maintained during this time.30049148FIGURE 5. Boost Voltage Supplied from the Shunt Zeneron V IN Resistor R3 should be chosen to provide enough RMS current to the zener diode (D3) and to the BOOST pin. A recom-mended choice for the zener current (I ZENER ) is 1 mA. The current I BOOST into the BOOST pin supplies the gate current of the NMOS control switch and varies typically according to the following formula for the X version:I BOOST = 0.56 x (D + 0.54) x (V ZENER – V D2) mA I BOOST can be calculated for the Y version using the following:I BOOST = 0.22 x (D + 0.54) x (V ZENER - V D2) µAwhere D is the duty cycle, V ZENER and V D2 are in volts, and I BOOST is in milliamps. V ZENER is the voltage applied to the anode of the boost diode (D2), and V D2 is the average forward voltage across D2. Note that this formula for I BOOST gives typ-ical current. For the worst case I BOOST , increase the current by 40%. In that case, the worst case boost current will beI BOOST-MAX = 1.4 x I BOOSTR3 will then be given byR3 = (V IN - V ZENER ) / (1.4 x I BOOST + I ZENER )9LM2738For example, using the X-version let V IN = 10V, V ZENER = 5V,V D2 = 0.7V, I ZENER = 1mA, and duty cycle D = 50%. ThenI BOOST = 0.56 x (0.5 + 0.54) x (5 - 0.7) mA = 2.5mA R3 = (10V - 5V) / (1.4 x 2.5mA + 1mA) = 1.11k ΩENABLE PIN / SHUTDOWN MODEThe LM2738 has a shutdown mode that is controlled by the enable pin (EN). When a logic low voltage is applied to EN,the part is in shutdown mode and its quiescent current drops to typically 400nA. The voltage at this pin should never ex-ceed V IN + 0.3V.SOFT-STARTThis function forces V OUT to increase at a controlled rate dur-ing start up. During soft-start, the error amplifier’s reference voltage ramps from 0V to its nominal value of 0.8V in approx-imately 600µs. This forces the regulator output to ramp up in a more linear and controlled fashion, which helps reduce in rush current.OUTPUT OVERVOLTAGE PROTECTIONThe overvoltage comparator compares the FB pin voltage to a voltage that is 16% higher than the internal reference Vref.Once the FB pin voltage goes 16% above the internal refer-ence, the internal NMOS control switch is turned off, which allows the output voltage to decrease toward regulation.UNDERVOLTAGE LOCKOUTUndervoltage lockout (UVLO) prevents the LM2738 from op-erating until the input voltage exceeds 2.7V (typ).The UVLO threshold has approximately 400mV of hysteresis,so the part will operate until V IN drops below 2.3V (typ). Hys-teresis prevents the part from turning off during power up if the V IN ramp-up is non-monotonic.CURRENT LIMITThe LM2738 uses cycle-by-cycle current limiting to protect the output switch. During each switching cycle, a current limit comparator detects if the output switch current exceeds 2.9A (typ), and turns off the switch until the next switching cycle begins.THERMAL SHUTDOWNThermal shutdown limits total power dissipation by turning off the output switch when the IC junction temperature exceeds 165°C. After thermal shutdown occurs, the output switch doesn’t turn on until the junction temperature drops to ap-proximately 150°C.Design GuideINDUCTOR SELECTIONThe Duty Cycle (D) can be approximated quickly using the ratio of output voltage (V O ) to input voltage (V IN ):The catch diode (D1) forward voltage drop and the voltage drop across the internal NMOS switch must be included to calculate a more accurate duty cycle. Calculate D by using the following formula:V SW can be approximated by:V SW = I OUT x R DSONThe diode forward drop (V D ) can range from 0.3V to 0.7V de-pending on the quality of the diode. The lower the V D , the higher the operating efficiency of the converter. The inductor value determines the output ripple current. Lower inductor values decrease the size of the inductor, but increase the output ripple current. An increase in the inductor value will decrease the output ripple current.One must ensure that the minimum current limit (2.0A) is not exceeded, so the peak current in the inductor must be calcu-lated. The peak current (I LPK ) in the inductor is calculated by:I LPK = I OUT + Δi L30049180FIGURE 6. Inductor CurrentIn general,Δi L = 0.1 x (I OUT ) → 0.2 x (I OUT )If Δi L = 33.3% of 1.50A, the peak current in the inductor will be 2.0A. The minimum guaranteed current limit over all op-erating conditions is 2.0A. One can either reduce Δi L , or make the engineering judgment that zero margin will be safe enough. The typical current limit is 2.9A.The LM2738 operates at frequencies allowing the use of ce-ramic output capacitors without compromising transient re-sponse. Ceramic capacitors allow higher inductor ripple without significantly increasing output ripple. See the output capacitor section for more details on calculating output volt-age ripple. Now that the ripple current is determined, the inductance is calculated by:WhereWhen selecting an inductor, make sure that it is capable of supporting the peak output current without saturating. Induc-tor saturation will result in a sudden reduction in inductance and prevent the regulator from operating correctly. Because10L M 2738of the speed of the internal current limit, the peak current ofthe inductor need only be specified for the required maximumoutput current. For example, if the designed maximum outputcurrent is 1.0A and the peak current is 1.25A, then the induc-tor should be specified with a saturation current limit of >1.25A. There is no need to specify the saturation or peak cur-rent of the inductor at the 2.9A typical switch current limit.Because of the operating frequency of the LM2738, ferritebased inductors are preferred to minimize core losses. Thispresents little restriction since the variety of ferrite-based in-ductors is huge. Lastly, inductors with lower series resistance(RDCR) will provide better operating efficiency. F or recom-mended inductors see Example Circuits.INPUT CAPACITORAn input capacitor is necessary to ensure that VINdoes notdrop excessively during switching transients. The primaryspecifications of the input capacitor are capacitance, voltage,RMS current rating, and ESL (Equivalent Series Inductance).The recommended input capacitance is 10 µF.The input volt-age rating is specifically stated by the capacitor manufacturer.Make sure to check any recommended deratings and alsoverify if there is any significant change in capacitance at theoperating input voltage and the operating temperature. Theinput capacitor maximum RMS input current rating (IRMS-IN)must be greater than:Neglecting inductor ripple simplifies the above equation to:It can be shown from the above equation that maximum RMScapacitor current occurs when D = 0.5. Always calculate theRMS at the point where the duty cycle D is closest to 0.5. TheESL of an input capacitor is usually determined by the effec-tive cross sectional area of the current path. A large leadedcapacitor will have high ESL and a 0805 ceramic chip capac-itor will have very low ESL. At the operating frequencies of theLM2738, leaded capacitors may have an ESL so large thatthe resulting impedance (2πfL) will be higher than that re-quired to provide stable operation. As a result, surface mountcapacitors are strongly recommended.Sanyo POSCAP, Tantalum or Niobium, Panasonic SP, andmultilayer ceramic capacitors (MLCC) are all good choices forboth input and output capacitors and have very low ESL. ForMLCCs it is recommended to use X7R or X5R type capacitorsdue to their tolerance and temperature characteristics. Con-sult capacitor manufacturer datasheets to see how ratedcapacitance varies over operating conditions.OUTPUT CAPACITORThe output capacitor is selected based upon the desired out-put ripple and transient response. The initial current of a loadtransient is provided mainly by the output capacitor. The out-put ripple of the converter is:When using MLCCs, the ESR is typically so low that the ca-pacitive ripple may dominate. When this occurs, the outputripple will be approximately sinusoidal and 90° phase shiftedfrom the switching action. Given the availability and quality ofMLCCs and the expected output voltage of designs using theLM2738, there is really no need to review any other capacitortechnologies. Another benefit of ceramic capacitors is theirability to bypass high frequency noise. A certain amount ofswitching edge noise will couple through parasitic capaci-tances in the inductor to the output. A ceramic capacitor willbypass this noise while a tantalum will not. Since the outputcapacitor is one of the two external components that controlthe stability of the regulator control loop, most applications willrequire a minimum of 22 µF of output capacitance. Capaci-tance, in general, is often increased when operating at lowerduty cycles. Refer to the circuit examples at the end of thedatasheet for suggested output capacitances of common ap-plications. Like the input capacitor, recommended multilayerceramic capacitors are X7R or X5R types.CATCH DIODEThe catch diode (D1) conducts during the switch off-time. ASchottky diode is recommended for its fast switching timesand low forward voltage drop. The catch diode should bechosen so that its current rating is greater than:ID1= IOUTx (1-D)The reverse breakdown rating of the diode must be at leastthe maximum input voltage plus appropriate margin. To im-prove efficiency, choose a Schottky diode with a low forwardvoltage drop.OUTPUT VOLTAGEThe output voltage is set using the following equation whereR2 is connected between the F B pin and GND, and R1 isconnected between VOand the FB pin. A good value for R2is 10k. When designing a unity gain converter (Vo = 0.8V), R1should be between 0Ω and 100Ω, and R2 should not be load-ed.VREF= 0.80VPCB LAYOUT CONSIDERATIONSWhen planning layout there are a few things to consider whentrying to achieve a clean, regulated output. The most impor-tant consideration is the close coupling of the GND connec-tions of the input capacitor and the catch diode D1. Theseground ends should be close to one another and be connect-ed to the GND plane with at least two through-holes. Placethese components as close to the IC as possible. Next in im-portance is the location of the GND connection of the outputcapacitor, which should be near the GND connections ofCINand D1. There should be a continuous ground plane onthe bottom layer of a two-layer board except under the switch-ing node island. The FB pin is a high impedance node andcare should be taken to make the FB trace short to avoid noisepickup and inaccurate regulation. The feedback resistorsshould be placed as close as possible to the IC, with the GNDof R1 placed as close as possible to the GND of the IC. TheVOUTtrace to R2 should be routed away from the inductor andany other traces that are switching. High AC currents flowthrough the VIN, SW and VOUTtraces, so they should be asshort and wide as possible. However, making the traces wideincreases radiated noise, so the designer must make thistrade-off. Radiated noise can be decreased by choosing aLM2738shielded inductor. The remaining components should also be placed as close as possible to the IC. Please see Application Note AN-1229 for further considerations and the LM2738 de-mo board as an example of a four-layer layout.RECOMMENED OPERATING AREA DUE TO MINIMUM ON TIMEThe LM2738 operates over a wide range of conditions, which is limited by the ON time of the device. A graph is provided to show the recommended operating area for the "X" at the full load (1.5A) and at 25°C ambient. The "Y" version of the LM2738 operates at a lower frequency and therefore oper-ates over the entire range of operating voltages.30049187FIGURE 7. LM2738X - 1.6MHz (25°C, LOAD=1.5A) 12L M 2738Calculating Efficiency, and Junction TemperatureThe complete LM2738 DC/DC converter efficiency can be calculated in the following manner.OrCalculations for determining the most significant power loss-es are shown below. Other losses totaling less than 2% are not discussed.Power loss (P LOSS ) is the sum of two basic types of losses in the converter: switching and conduction. Conduction losses usually dominate at higher output loads, whereas switching losses remain relatively fixed and dominate at lower output loads. The first step in determining the losses is to calculate the duty cycle (D):V SW is the voltage drop across the internal NFET when it is on, and is equal to:V SW = I OUT x R DSONV D is the forward voltage drop across the Schottky catch diode. It can be obtained from the diode manufactures Elec-trical Characteristics section. If the voltage drop across the inductor (V DCR ) is accounted for, the equation becomes:The conduction losses in the free-wheeling Schottky diode are calculated as follows:P DIODE = V D x I OUT x (1-D)Often this is the single most significant power loss in the cir-cuit. Care should be taken to choose a Schottky diode that has a low forward voltage drop.Another significant external power loss is the conduction loss in the output inductor. The equation can be simplified to:P IND = I OUT 2 x R DCRThe LM2738 conduction loss is mainly associated with the internal NFET switch:If the inductor ripple current is fairly small, the conduction losses can be simplified to:P COND = I OUT 2 x R DSON x DSwitching losses are also associated with the internal NFET switch. They occur during the switch on and off transition pe-riods, where voltages and currents overlap resulting in power loss. The simplest means to determine this loss is to empiri-cally measure the rise and fall times (10% to 90%) of the switch at the switch node.Switching Power Loss is calculated as follows:P SWR = 1/2(V IN x I OUT x F SW x T RISE )P SWF = 1/2(V IN x I OUT x F SW x T FALL )P SW = P SWR + P SWFAnother loss is the power required for operation of the internal circuitry:P Q = I Q x V INI Q is the quiescent operating current, and is typically around 1.9mA for the 0.55MHz frequency option.Typical Application power losses are:Power Loss TabulationV IN 12.0V V OUT 3.3V P OUT 4.125WI OUT 1.25A V D 0.34V P DIODE317mWF SW 550kHz I Q 1.9mA P Q 22.8mW T RISE 8nS P SWR 33mW T FALL 8nS P SWF 33mW R DS(ON)275m ΩP COND 118mW IND DCR70m ΩP IND 110mW D 0.275P LOSS 634mW η86.7%P INTERNAL207mWΣP COND + P SW + P DIODE + P IND + P Q = P LOSS ΣP COND + P SWF + P SWR + P Q = P INTERNALP INTERNAL = 207mWThermal DefinitionsT J = Chip junction temperature T A = Ambient temperatureR θJC = Thermal resistance from chip junction to device case R θJA = Thermal resistance from chip junction to ambient air Heat in the LM2738 due to internal power dissipation is re-moved through conduction and/or convection.Conduction: Heat transfer occurs through cross sectional ar-eas of material. Depending on the material, the transfer of heat can be considered to have poor to good thermal con-ductivity properties (insulator vs. conductor).Heat Transfer goes as:Silicon → package → lead frame → PCBConvection: Heat transfer is by means of airflow. This could be from a fan or natural convection. Natural convection occurs when air currents rise from the hot device to cooler air.LM2738。
MAA50-2S271512SBN中文资料
Single-output modelsModule МАА50- 1S03S ХХ МАА50- 1S05S ХХ МАА50- 1S12S ХХ МАА50- 1S15S ХХ МАА50- 1S24S ХХ МАА50- 1S27S ХХМАА50- 1S48S ХХ МАА50- 1S68S ХХ Output power 26,4 W 40 W 50 W Output voltage 3,3 VDC 5 VDC12 VDC15 VDC24 VDC27 VDC48 VDC68 VDCOutput current8 A8 А 4,17 А 3,33 А 2,27 А 1,85 А 1,04 А 0,73 АDual-output modelsModule МАА50-2S0505S ХХ МАА50-2S1212S ХХМАА50-2S1515S ХХOutput power 50 WChannel number 1 2 1 2 1 2 Output voltage 5 VDC 5 VDC 12 VDC 12 VDC15 VDC 15 VDC Output current5 А 5 А 2,1 А 2,1 А 1,67 А 1,67 АTriple-output modelsModule МАА50-3S051212S ХХМАА50-3S051515S ХХOutput power 50 WChannel number 1 2 3 1 2 3Output voltage 5 VDC12 VDC12 VDC5 VDC15 VDC15 VDCOutput current5 А 1,04А 1,04А 5 А 0,83 А 0,83 Аby request can be delivered modules with non-standard output voltage from 3 to 70 VDC and maximal output current to 8А.Ordering informationМАА 50 – 3 S 05 15 15 S U Nc d e f g h i j k lc - MAA Seriesd - Nominal output power, Watte - Channel quantity (1, 2, 3)f - - Input voltageS – 220VAC K – 115VACg - Output voltage channel 1, VDC h - Output voltage channel 2, VDC i - Output voltage channel 3, VDC j - Execution with sealing k - EmbodimentB – uniform case with primingl - Operating temperature range of caseN - - 40°С…+85°С P - - 50°С…+85°С• Rugged environment in operation intechnical equipment of industrial and special purpose. • Low-profile construction • Metal case• Cooling by heat sink or free air convection• Electromagnetic compatibility index to GOST V 25803-91 for group 1.2.1 (curve 2) • Stability to external factors of group 1U GOST RV 20.39.414.1-97 (additional) • Short circuit protection, overload, overvoltage and thermal protection • Galvanic isolated outputs •Acceptance «5»Температура окружающей среды Токр, С9080706050403020100-10-20-30-40-50Выходная мощность, Вт6050403020100Input specificationsParameter Conditions of dimensions MIN NOM MAX UnitS 187 220 242 VACSteady-state deviationК 80 115 140 VAC S 176 264 VACInput voltageTransient deflection, 1 secК 80 150 VAC SInput frequencyК47 400 440 HzOutput specificationsParameterConditions of dimensions MIN NOM MAX Unit Single-output execution (Inom 10 – 100%) ±3 % Output 1 multi-output execution(Inom 10 – 100%) ±3 %Uout2&3 differs from Uout1 less than 20% Output 2 and 3 multi-output execution(Inom 10 – 100%)±13 %Output 1 multi-output execution (Inom 30 – 100%) ±3 %Total output voltage instabilityUout2&3differs fromUout1 more than 20% Output 2 and 3 multi-output execution(Inom 50-100%) ±15 %Output voltage pulsations ripple(peak-to-peak)Dimension by device for pulsation control2% Uout.nom.Current overload protection actuation level110 % Iout.nom. Short circuit protection Autorepair 150 % Iout.nom. Overvoltage protection 120 % Uout.nom.Thermal protection90-95°CGeneral specificationsParameterConditions of dimensions MIN NOM MAX Unit- operating of case N P – 40 – 50 +85+85°C– power loss See diagram Temperature– storage – 50 +85 °CEfficiency 78 % Conversion frequency 50 kHz~ in/out 1500 VAC ~ in/case 1500 VAC~ out/case 500 VDC Isolation~ out/out 500 VDCInsulation resistance Voltage 500VDC 20 Ohm High humidity Temperature 35°С 98 % Cyclic overpatching of temperature – 60 +85 °C Multiple mechanical shocks Speeding-up 15g 2 15 ms Sinusoidal vibration Speeding-up 5g 50 500 Hz Atmosphere pressure 6х104 1,2х105 Pa Time to failure Temperature 35°C 105 hour Mass 0,4 kg all specifications redused for normal climatic conditions, Uin.nom., Iout.nom., if it is not specified differently.Power loss diagramFree airconvectionWith heat sinkAmbient temperature Tamb, °CO u t p u t p o w e r , WOutput settings№ pin1 2 3 4 5 6 7 8 9 Single-channel case ~IN (N) ~IN (L) +out1 +out1 +out1 -out1 -out1 -out1 Dual-channel case ~IN (N) ~IN (L) +out1 +out1 -out1 -out1 -out2 +out2 Triple-channelcase~IN (N)~IN (L)-out3+out3+out1-out1-out2+out2Switching on standart diagramFU in – current safety device 1A for input voltage 220VAC, 2A for input voltage 115VAC.S out – ceramic condenser capacity 0,47-15 mcF with corresponding operating voltage to decrease high-frequency noise level.S out2 – electronic condenser capacity 22-100 mcF in consideration with operating voltage and polarity. It makes for purpose to decrease dynamic instability when module work at dynamic load.+Out -Out ~In (L) ~In (N) Power module R heat CaseСout1 Сout2~In (L)~In (N)ground FU inSingle, Dual, and Triple-output execution SBNSingle, Dual, and Triple-output execution SVN (with flexible erection joints)The Flexible erection fjoints by length (100±5)mm is executed by wire section (0,5...1,5)mm2.。
HLMP-2735中文资料
LED Light Bars Technical DataFeatures•Large Bright, Uniform Light Emitting Areas•Choice of Colors •Categorized for Light Output •Yellow and Green Categorized for Dominant Wavelength•Excellent ON-OFF Contrast •X-Y Stackable•Flush Mountable•Can be Used with Panel and Legend Mounts• Light Emitting Surface Suitable for Legend Attachment per Application Note 1012•HLCP-X100 Series Designed for Low Current Operation •Bicolor Devices Available Applications•Business MachineMessage Annunciators •Telecommunications Indicators•Front Panel Process Status Indicators•PC Board Identifiers•Bar Graphs DescriptionThe HLCP-X100 and HLMP-2XXXseries light bars are rectangularlight sources designed for avariety of applications where alarge bright source of light isrequired. These light bars areconfigured in single-in-line anddual-in-line packages that containeither single or segmented lightemitting areas. The AlGaAs RedHLCP-X100 series LEDs usedouble heterojunction AlGaAs ona GaAs substrate. The HERHLMP-2300/2600 and YellowHLMP-2400/2700 series LEDshave their p-n junctions diffusedinto a GaAsP epitaxial layer on aGaP substrate. The Green HLMP-2500/2800 series LEDs use aliquid phase GaP epitaxial layeron a GaP substrate. The bicolorHLMP-2900 series use acombination of HER/Yellow orHER/Green LEDs.HLCP-A100, -B100, -C100,-D100, -E100, -F100, -G100,-H100HLMP-2300, -2350, -2400,-2450, -2500, -2550, -2600,-2620, -2635, -2655, -2670,-2685, -2700, -2720, -2735,-2755, -2770, -2785, -2800,-2820, -2835, -2855, -2870,-2885, -2950, -2965Selection GuideLight Bar Part Number Corresponding Size ofPackage Panel and HLCP-HLMP-Light Emitting AreasOutlineLegend Mount Part No. HLMP-AlGaAs HER Yellow Green A1002300240025008.89 mm x 3.81 mm 1A 2599(.350 in. x .150 in.)B10023502450255019.05 mm x 3.81 mm 1B 2598(.750 in. x .150 in.)D1002600270028008.89 mm x 3.81 mm 2D 2898(.350 in. x .150 in.)E1002620272028208.89 mm x 3.81 mm 4E 2899(.350 in. x .150 in.)F100263527352835 3.81 mm x 19.05 mm 2F 2899(.150 in. x .750 in.)C1002655275528558.89 mm x 8.89 mm 1C 2898(.350 in. x .350 in.)G1002670277028708.89 mm x 8.89 mm 2G 2899(.350 in. x .350 in.)H1002685278528858.89 mm x 19.05 mm 1H 2899(.350 in. x .750 in.)295029508.89 mm x 8.89 mm Bicolor I 2898(.350 in. x .350 in.)296529658.89 mm x 8.89 mm BicolorI2898(.350 in. x .350 in.)Number of Light Emitting AreasPart Numbering SystemHLCP- xx xx-xx x xxHLMP-xx xx-xx x xxMechanical Options[1]00: No mechanical optionColor Bin Options[1,2]0: No color bin limitationB: Color bins 2 & 3 (applicable for yellow devices only)C: Color bins 3 & 4 only (applicable for green devices only)Maximum Intensity Bin[1,2]0: No maximum intensity bin limitationMinimum Intensity Bin[1,2]0: No minimum intensity bin limitationDevice Specific Configuration[1]Refer to respective data sheetColor[1]x1: AlGaAs Red (applicable for HLCP-x100 only)23: High Efficiency Red24: Yellow25: Green26: High Efficiency Red27: Yellow28: Green29: Bicolor (High Efficiency Red/Yellow) OR (High Efficiency Red/Green) Notes:1. For codes not listed in the figure above, please refer to the respective data sheet or contact your nearest Agilent representativefor details.2. Bin options refer to shippable bins for a part-number. Color and Intensity Bins are typically restricted to 1 bin per tube(exceptions may apply). Please refer to respective data sheet for specific bin limit information.Package DimensionsNOTES:1. DIMENSIONS IN MILLIMETRES (INCHES). TOLERANCES ±0.25 mm (±0.010 IN.) UNLESS OTHERWISE INDICATED.2. FOR YELLOW AND GREEN DEVICES ONLY.Internal Circuit DiagramsAbsolute Maximum RatingsHER Yellow GreenAlGaAs Red HLMP-2300/HLMP-2400/HLMP-2500/ ParameterHLCP-X1002600/29XX2700/29502800/2965Series Series Series Series Average Power Dissipated per LED Chip37 mW[1]135 mW[2]85 mW[3]135 mW[2] Peak Forward Current per LED Chip45 mA[4]90 mA[5]60 mA[5]90 mA[5] Average Forward Current per LED Chip15 mA25 mA20 mA25 mADC Forward Current per LED Chip15 mA[1]30 mA[2]25 mA[3]30 mA[2] Reverse Voltage per LED Chip 5 V 6 V[6]Operating Temperature Range–20°C to +100°C[7]–40°C to +85°C–20°C to +85°C Storage Temperature Range –40°C to +85°CWave Soldering Temperature250°C for 3 seconds1.6 mm (1/16 inch) below BodyNotes:1.Derate above 87°C at 1.7 mW/°C per LED chip. For DC operation, derate above 91°C at 0.8 mA/°C.2.Derate above 25°C at 1.8 mW/°C per LED chip. For DC operation, derate above 50°C at 0.5 mA/°C.3.Derate above 50°C at 1.8 mW/°C per LED chip. For DC operation, derate above 60°C at 0.5 mA/°C.4.See Figure 1 to establish pulsed operation. Maximum pulse width is 1.5 mS.5.See Figure 6 to establish pulsed operation. Maximum pulse width is 2 mS.6.Does not apply to bicolor parts.7.For operation below –20°C, contact your local Agilent sales representative.Electrical/Optical Characteristics at T A = 25°CAlGaAs Red HLCP-X100 SeriesParameter HLCP-Symbol Min.Typ.Max.Units Test ConditionsA100/D100/E100I V37.5mcd I F = 3 mA Luminous Intensityper Lighting Emitting B100/C100/F100/G100615mcdArea[1]H1001230mcdPeak WavelengthλPEAK645nmDominant Wavelength[2]λd637nmForward Voltage per LED V F 1.8 2.2V I F = 20 mA Reverse Breakdown Voltage per LED V R515V I R = 100 µA Thermal Resistance LED Junction-to-Pin RθJ-PIN250°C/W/LEDParameter HLMP-Symbol Min.Typ.Max.Units Test Conditions2400/2700/2720IV 620mcd IF= 20 mALuminous Intensityper Lighting Emitting2450/2735/2755/2770/2950[3]1338mcd Area[1]27852670mcdPeak WavelengthλPEAK583nmDominant Wavelength[2]λd585nmForward Voltage per LED VF 2.1 2.6V IF= 20 mAReverse Breakdown Voltage per LED[5]VR 615V IR= 100 µAThermal Resistance LED Junction-to-Pin RθJ-PIN 150°C/W/LEDHigh Efficiency Red HLMP-2300/2600/2900 SeriesParameter HLMP-Symbol Min.Typ.Max.Units Test Conditions2300/2600/2620IV 623mcd IF= 20 mALuminous Intensityper Lighting Emitting2350/2635/2655/2670/2950[3]1345mcd Area[1]2965[4]1945mcd26852280mcdPeak WavelengthλPEAK635nmDominant Wavelength[2]λd626nmForward Voltage per LED VF 2.0 2.6V IF= 20 mAReverse Breakdown Voltage per LED[5]VR 615V IR= 100 µAThermal Resistance LED Junction-to-Pin RθJ-PIN 150°C/W/LEDYellow HLMP-2400/2700/2950 SeriesHigh Performance Green HLMP-2500/2800/2965 SeriesParameter HLMP-Symbol Min.Typ.Max.Units Test Conditions2500/2800/2820IV 525mcd IF= 20 mALuminous Intensityper Lighting Emitting2550/2835/2855/28701150mcd Area[1]2965[4]2550mcd288522100mcdPeak WavelengthλPEAK565nmDominant Wavelength[2]λd572nmForward Voltage per LED VF 2.2 2.6V IF= 20 mAReverse Breakdown Voltage per LED[5]VR 615V IR= 100 µAThermal Resistance LED Junction-to-Pin RθJ-PIN 150°C/W/LEDNotes:1.These devices are categorized for luminous intensity. The intensity category is designated by a letter code on the side of the package.2.The dominant wavelength, λd , is derived from the CIE chromaticity diagram and is the single wavelength which defines the color of thedevice. Yellow and Green devices are categorized for dominant wavelength with the color bin designated by a number code on the side of the package.3.This is an HER/Yellow bicolor light bar. HER electrical/optical characteristics are shown in the HER table. Yellow electrical/opticalcharacteristics are shown in the Yellow table.4.This is an HER/Green bicolor light bar. HER electrical/optical characteristics are shown in the HER table. Green electrical/opticalcharacteristics are shown in the Green table.5.Does not apply to HLMP-2950 or HLMP-2965.Figure 1. Maximum Allowable Peak Current vs. Pulse Duration.Figure 4. Forward Current vs. Forward Voltage.Figure 5. Relative Luminous Intensity vs. DC Forward Current.AlGaAs RedFor a detailed explanation on the use of data sheet information and recommended soldering procedures,see Application Notes 1005, 1027, and 1031.HER, Yellow, GreenIntensity Bin Limits (mcd)HLMP-2300/2600/2620 Annunciators (.2 x .4 HER/AlGaAs), HLCP-A100/D100/E100IV Bin Category Min.Max.A 3.00 5.60B 4.508.20C 6.8012.10D10.1018.50E15.3027.80F22.8045.50G36.9073.80Notes:1. Minimum category A for Red L/C AlGaAs (-A100/-D100/-E100).2. Minimum category C for HER (-2300/-2600/-2620).HLMP-2350/2635/2655/2670 Annunciators (.2 x .8 HER/AlGaAs), HLCP-B100/C100/F100/G100 (.4 x .4 HER/AlGaAs)IV Bin Category Min.Max.A 5.4010.90B9.0016.00C13.1024.00D19.7036.10E29.6054.20F44.9088.80G71.90143.80Notes:1. Minimum category A for Red L/C AlGaAs (-B100/-C100/-F100/-G100).2. Minimum category C for HER (-2350/-2635/-2670).HLMP-2685/HLCP-H100 Annunciators (.4 x .8 HER/AlGaAs) IV Bin Category Min.Max.A10.8022.00B18.0027.10C22.0040.80D33.3061.10E50.0091.80F75.10150.00G121.70243.40Notes:1. Minimum category A for Red L/C AlGaAs (-H100).2. Minimum category C for HER (-2685).HLMP-2400/2700/2720 Annunciators (.2 x .4 Yellow)IV Bin Category Min.Max.C 6.1011.20D9.2016.80E13.8025.30F20.7041.40G33.6067.20HLMP-2450/2735/2755/2770 Annunciators (.2 x .8 Yellow & .4 x .4 Yellow) IV Bin Category Min.Max.C13.0022.00D18.0033.00E27.0050.00F40.5081.00G65.60131.20HLMP-2785 Annunciators (.4 x .8 Yellow)IV Bin Category Min.Max.C26.0044.40D36.0066.00E54.0099.00F81.00162.00G131.40262.80HLMP-2500/2800/2820 Annunciators (.2 x .4 Yellow)IV Bin Category Min.Max.C 5.6010.20D8.4015.30E12.6023.10F18.9037.80G30.6061.20H49.5097.90I80.10158.40HLMP-2550/2835/2855/2870 Annunciators (.2 x .8/.4 x .4 Green) IV Bin Category Min.Max.C11.3020.60D17.0031.00E25.4046.50F38.1076.20G61.60123.20H99.81197.67I161.73320.21HLMP-2885 Annunciators (.4 x .8 Green)IV Bin Category Min.Max.C22.2040.80D33.4061.20E50.1091.90F75.10150.30G121.10242.20H196.10383.50I313.70613.60HLMP-2950 Bi-Color Annunciators (.4 x .4 HER/Yellow) IV Bin Category Min.Max.Red Iv CategoriesC11.3020.60D17.0031.00E25.4046.50F38.1076.20G61.60123.20Yellow Iv CategoriesC13.0022.00D18.0033.00E27.0050.00F40.5081.00G65.60131.20HLMP-2965 Bi-Color Annunciators (.4 x .4/.2 x .8 HER/Green) IV Bin Category Min.Max.Red Iv CategoriesD19.7036.10E29.6054.20F44.9088.80G71.90143.80Green Iv CategoriesB7.5013.90C11.3020.60D17.0031.00E25.4046.50F38.1076.20G61.60123.20H100.00200.00Notes:1. Minimum category D for LPE Green (-2965).2. In green mode, the devices are to be color binned into standard color bins, perTable 2. (-2685).Color CategoriesNote:All categories are established for classification of products. Products may not be available in all categories. Please contact your local Agilent representatives for further clarification/information.I AVG I v TIME AVG =I TESTwhere:I TEST =3 mA for AlGaAs Red(HLMP-X000 series)20 mA for HER,Yellow and Green (HLMP-2XXX series)Example:For HLMP-2735 series ηI PEAK = 1.18 at I PEAK = 48 mA12 mA I v TIME AVG =20 mA= 25 mcd[][]ElectricalThese light bars are composed of two, four, or eight light emitting diodes, with the light from each LED optically scattered to form an evenly illuminated light emitting surface.The anode and cathode of each LED is brought out by separate pins. This universal pinoutarrangement allows the LEDs to be connected in three possible configurations: parallel, series, or series parallel. The typical forward voltage values can be scaled from Figures 4 and 9.These values should be used to calculate the current limiting resistor value and typical power consumption. Expected maximum V F values for driver circuit design and maximum power dissipation,may be calculated using the following V F MAX models:AlGaAs Red HLCP-X100 series V F MAX = 1.8 V + I Peak (20 Ω)For: I Peak ≤ 20 mAV F MAX = 2.0 V + I Peak (10 Ω)For: 20 mA ≤ I Peak ≤ 45 mA HER (HLMP-2300/2600/2900),Yellow (HLMP-2400/2700/2900)and Green (HLMP-2500/2800/2900) seriesV F MAX = 1.6 + I Peak (50 Ω)For: 5 mA ≤ I Peak ≤ 20 mA V F MAX = 1.8 + I Peak (40 Ω)For: I Peak ≥ 20 mAThe maximum power dissipation can be calculated for any pulsed or DC drive condition. For DC operation, the maximum powerdissipation is the product of the maximum forward voltage and the maximum forward current. For pulsed operation, the maximum power dissipation is the product of the maximum forward voltage at the peak forward current times the maximum average forward current. Maximum allowable power dissipation for any given ambient temperature and thermal resistance (R θJ-A ) can be deter-mined by using Figure 2 or 7. The solid line in Figure 2 or 7 (R θJ-A of 600/538 C/W) represents a typical thermal resistance of a device socketed in a printed circuitboard. The dashed lines represent achievable thermal resistances that can be obtained through improved thermal design. Once the maximum allowable power dissipation is determined, the maximum pulsed or DC forward current can be calculated.OpticalSize of Light Surface Area Emitting Area Sq. Metres Sq. Feet 8.89 mm x 8.89 mm 67.74 x 10–6729.16 x 10–68.89 mm x 3.81 mm 33.87 x 10–6364.58 x 10–68.89 mm x 19.05 mm 135.48 x 10–61458.32 x 10–63.81 mm x 19.05 mm72.85 x 10–6781.25 x 10–6The radiation pattern for these light bar devices is approximately Lambertian. The luminoussterance may be calculated using one of the two following formulas:I v (cd)L v (cd/m 2) =A (m 2)πI v (cd)L v (footlamberts) =A (ft 2)Refresh rates of 1 kHz or faster provide the most efficientoperation resulting in the maxi-mum possible time average luminous intensity.The time average luminousintensity may be calculated using the relative efficiency character-istic of Figure 3 or 8, ηI PEAK , and adjusted for operating ambient temperature. The time average luminous intensity at T A = 25°C is calculated as follows:(ηI PEAK ) (I v Data Sheet)(1.18) (35 mcd)The time average luminous intensity may be adjusted for operating ambient temperature by the following exponential equation:I v (T A) = I V (25°C)e[K (T –25°C)]Color KAlGaAs Red–0.0095/°CHER–0.0131/°C Yellow–0.0112/°C Green–0.0104/°CExample:I v (80°C) = (25 mcd)e[-0.0112 (80-25)] = 14 mcd.MechanicalThese light bar devices may beoperated in ambient temperaturesabove +60°C without deratingwhen installed in a PC boardconfiguration that provides athermal resistance pin to ambientvalue less than 280°C/W/LED. SeeFigure 2 or 7 to determine themaximum allowed thermalresistance for the PC board,RθPC-A, which will permitnonderated operation in a givenambient temperature.To optimize device opticalperformance, specially developedplastics are used which restrictthe solvents that may be used forcleaning. It is recommended thatonly mixtures of Freon (F113)and alcohol be used for vaporcleaning processes, with animmersion time in the vapors ofless than two (2) minutesmaximum. Some suggested vaporcleaning solvents are Freon TE,Genesolv DES, Arklone A or K. A60°C (140°F) water cleaningprocess may also be used, whichincludes a neutralizer rinse (3%ammonia solution or equivalent),a surfactant rinse (1% detergentsolution or equivalent), a hotwater rinse and a thorough airdry. Room temperature cleaningmay be accomplished with FreonT-E35 or T-P35, Ethanol,Isopropanol or water with a milddetergent.For further information onsoldering LEDs please refer toApplication Note 1027.A/semiconductorsFor product information and a complete list ofdistributors, please go to our web site.For technical assistance call:Americas/Canada: +1 (800) 235-0312 or(916) 788-6763Europe: +49 (0) 6441 92460China: 10800 650 0017Hong Kong: (+65) 6756 2394India, Australia, New Zealand: (+65) 6755 1939Japan: (+81 3) 3335-8152 (Domestic/Interna-tional), or 0120-61-1280 (Domestic Only)Korea: (+65) 6755 1989Singapore, Malaysia, Vietnam, Thailand,Philippines, Indonesia: (+65) 6755 2044Taiwan: (+65) 6755 1843Data subject to change.Copyright © 2004 Agilent Technologies, Inc.Obsoletes 5962-7197EJuly 8, 20045988-2221EN。
AM-5812_08中文资料
SS: Solar Simulator
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
NJM2732中文资料
:1.8 to 6.0V :VICM= 0 to 5.0V, at V+=5V :VOH≥4.9V/ VOL≤0.1V, at V+=5V, RL=20kΩ :VOH≥4.75V/ VOL≤0.25V, at V+=5V, RL=2kΩ :5mV max. :0.4V/µs typ. :10nV/√Hz typ. :ΦM=75deg. typ., at RL=2kΩ, voltage follower :DIP8, DMP8, EMP8, SSOP8, TVSP8
NJM2732D
NJM2732M
NJM2732E
■ FEATURES ●Operating Voltage ●Input Full-Swing ●Output Full-Swing ●Load Drivability ●Offset Voltage ●Slew Rate ●Low Input Voltage Noise ●Adequate phase margin ●Bipolar Technology ●Package Outline
NJM2732
Full-Swing Input and Output type Dual Operational Amplifier
■ GENERAL DESCRIPTION NJM2732 is dual operational amplifier with full swing input and output, operate from 1.8V. Input and Output Full Swing provides wide dynamic range, is from ground to power supply level. In addition to ground sensing applications, NJM2732 enable to be applied to Hi-side sensing applications. The features are low noise and low operating voltage for battery management, portable audio applications, and others. ■ PACKAGE OUTLINE
LM2731_07资料
July 2007 LM27310.6/1.6 MHz Boost Converters With 22V Internal FET Switch in SOT-23General DescriptionThe LM2731 switching regulators are current-mode boost converters operating at fixed frequencies of 1.6 MHz (“X” op-tion) and 600 kHz (“Y” option).The use of SOT-23 package, made possible by the minimal power loss of the internal 1.8A switch, and use of small in-ductors and capacitors result in the industry's highest power density. The 22V internal switch makes these solutions per-fect for boosting to voltages up to 20V.These parts have a logic-level shutdown pin that can be used to reduce quiescent current and extend battery life. Protection is provided through cycle-by-cycle current limiting and thermal shutdown. Internal compensation simplifies de-sign and reduces component count.Switch FrequencyX Y1.6 MHz0.6 MHz Features■22V DMOS FET switch■ 1.6 MHz (“X”), 0.6 MHz (“Y”) switching frequency ■Low R DS(ON) DMOS FET■Switch current up to 1.8A■Wide input voltage range (2.7V–14V)■Low shutdown current (<1 µA)■5-Lead SOT-23 package■Uses tiny capacitors and inductors■Cycle-by-cycle current limiting■Internally compensatedApplications■White LED Current Source■PDA’s and Palm-Top Computers■Digital Cameras■Portable Phones and Games■Local Boost RegulatorTypical Application Circuit2005911020059130© 2007 National Semiconductor LM2731 0.6/1.6 MHz Boost Converters With 22V Internal FET Switch in SOT-23200591532005915620059155White LED Flash Application 2L M 2731Connection DiagramTop View200591115-Lead SOT-23 PackageSee NS Package Number MF05AOrdering InformationOrder Number Package Type Package Drawing Supplied As Package IDLM2731XMF SOT23-5MF05A1K Tapeand Reel S51A LM2731XMFX 3K Tape and Reel S51A LM2731YMF 1K Tape and Reel S51B LM2731YMFX3K Tape and ReelS51BPin DescriptionsPin Name Function1SW Drain of the internal FET switch.2GND Analog and power ground.3FB Feedback point that connects to external resistive divider.4SHDN Shutdown control input. Connect to Vin if the feature is not used.5V INAnalog and power input.LM2731Block Diagram20059112Theory of OperationThe LM2731 is a switching converter IC that operates at a fixed frequency (0.6 or 1.6 MHz) for fast transient response over a wide input voltage range and incorporates pulse-by-pulse current limiting protection. Because this is current mode control, a 33 m Ω sense resistor in series with the switch FET is used to provide a voltage (which is proportional to the FET current) to both the input of the pulse width modulation (PWM)comparator and the current limit amplifier.At the beginning of each cycle, the S-R latch turns on the FET.As the current through the FET increases, a voltage (propor-tional to this current) is summed with the ramp coming from the ramp generator and then fed into the input of the PWM comparator. When this voltage exceeds the voltage on the other input (coming from the Gm amplifier), the latch resets and turns the FET off. Since the signal coming from the Gm amplifier is derived from the feedback (which samples thevoltage at the output), the action of the PWM comparator constantly sets the correct peak current through the FET to keep the output voltage in regulation.Q1 and Q2 along with R3 - R6 form a bandgap voltage refer-ence used by the IC to hold the output in regulation. The currents flowing through Q1 and Q2 will be equal, and the feedback loop will adjust the regulated output to maintain this.Because of this, the regulated output is always maintained at a voltage level equal to the voltage at the FB node "multiplied up" by the ratio of the output resistive divider.The current limit comparator feeds directly into the flip-flop that drives the switch FET. If the FET current reaches the limit threshold, the FET is turned off and the cycle terminated until the next clock pulse. The current limit input terminates the pulse regardless of the status of the output of the PWM com-parator. 4L M 2731Absolute Maximum Ratings (Note 1)If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.Storage Temperature Range−65°C to +150°C Operating JunctionTemperature Range−40°C to +125°C Lead Temp. (Soldering, 5 sec.)300°C Power Dissipation (Note 2)Internally Limited FB Pin Voltage−0.4V to +6V SW Pin Voltage−0.4V to +22V Input Supply Voltage−0.4V to +14.5V Shutdown Input Voltage(Survival)−0.4V to +14.5V θJ-A (SOT23-5)265°C/W ESD Rating (Note 3)Human Body Model 2 kVElectrical CharacteristicsLimits in standard typeface are for TJ= 25°C, and limits in boldface type apply over the full operating temperature range (−40°C ≤ T J≤ +125°C). Unless otherwise specified: V IN = 5V, V SHDN = 5V, I L = 0A.Symbol Parameter ConditionsMin(Note 4)Typical(Note 5)Max(Note 4)UnitsVINInput Voltage 2.714VVOUT (MIN)Minimum Output VoltageUnder Load RL= 43ΩX Option(Note 8)VIN= 2.7V 5.47VVIN= 3.3V810VIN= 5V1317RL= 43ΩY Option(Note 8)VIN= 2.7V8.2510VIN= 3.3V10.512VIN= 5V1416RL= 15ΩX Option(Note 8)VIN= 2.7V 3.755VIN= 3.3V5 6.5VIN= 5V8.7511RL= 15ΩY Option(Note 8)VIN= 2.7V56VIN= 3.3V 5.57.5VIN= 5V911ISWSwitch Current Limit(Note 6) 1.81.42AR DS (ON)Switch ON Resistance ISW= 100 mAVin = 5V260400500mΩISW= 100 mAVin = 3.3V300450550SHDNTH Shutdown Threshold Device ON 1.5VDevice OFF0.50ISHDNShutdown Pin BiasCurrent VSHDN= 00µA VSHDN= 5V02VFBFeedback Pin ReferenceVoltage VIN= 3V1.205 1.230 1.255VIFBFeedback Pin BiasCurrent VFB= 1.23V60500nAI Q Quiescent Current VSHDN= 5V, Switching "X"2 3.0mAVSHDN= 5V, Switching "Y" 1.02VSHDN= 5V, Not Switching400500µAVSHDN= 00.0241FB Voltage LineRegulation2.7V ≤ V IN≤ 14V0.02%/VFSWSwitching Frequency(Note 7)“X” Option1 1.6 1.85MHz“Y” Option0.400.600.8LM2731Symbol ParameterConditionsMin (Note 4)Typical (Note 5)Max (Note 4)Units D MAX Maximum Duty Cycle (Note 7)“X” Option 8693 %“Y” Option9296 I LSwitch LeakageNot Switching V SW = 5V1µANote 1:Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of the limits set forth under the operating ratings which specify the intended range of operating conditions.Note 2:The maximum power dissipation which can be safely dissipated for any application is a function of the maximum junction temperature, T J (MAX) = 125°C, the junction-to-ambient thermal resistance for the SOT-23 package, θJ-A = 265°C/W, and the ambient temperature, T A . The maximum allowable power dissipation at any ambient temperature for designs using this device can be calculated using the formula:If power dissipation exceeds the maximum specified above, the internal thermal protection circuitry will protect the device by reducing the output voltage as required to maintain a safe junction temperature.Note 3:The human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin.Note 4:Limits are guaranteed by testing, statistical correlation, or design.Note 5:Typical values are derived from the mean value of a large quantity of samples tested during characterization and represent the most likely expected value of the parameter at room temperature.Note 6:Switch current limit is dependent on duty cycle (see Typical Performance Characteristics).Note 7:Guaranteed limits are the same for Vin = 3.3V input.Note 8:L = 10 µH, C OUT = 4.7 µF, duty cycle = maximumTypical Performance CharacteristicsUnless otherwise specified: V IN = 5V, SHDN pin tied to V IN .Iq Vin (Active) vs Temperature - "X"20059102Iq Vin (Active) vs Temperature - "Y"20059104 6L M 2731Oscillator Frequency vs Temperature - "X"20059105Oscillator Frequency vs Temperature - "Y"20059101Max. Duty Cycle vs Temperature - "X"20059107Max. Duty Cycle vs Temperature - "Y"20059106Iq Vin (Idle) vs Temperature20059125Feedback Bias Current vs Temperature20059126LM2731Feedback Voltage vs Temperature20059127R DS (ON) vs Temperature20059128Current Limit vs Temperature20059129R DS (ON) vs V IN20059152Efficiency vs Load Current - "X"V IN = 2.7V, V OUT = 5V 20059135Efficiency vs Load Current - "X"V IN = 3.3V, V OUT = 5V20059136 8L M 2731Efficiency vs Load Current - "X"V IN = 4.2V, VOUT= 5V20059137Efficiency vs Load Current - "X"VIN= 2.7V, VOUT= 12V20059138Efficiency vs Load Current - "X"V IN = 3.3V, VOUT= 12V20059139Efficiency vs Load Current - "X"VIN= 5V, VOUT= 12V20059140Efficiency vs Load Current - "X"V IN = 5V, VOUT= 18V20059141Efficiency vs Load Current - "Y"VIN= 2.7V, VOUT= 5V20059142LM2731Efficiency vs Load Current - "Y"V IN = 3.3V, V OUT = 5V20059143Efficiency vs Load Current - "Y"V IN = 4.2V, V OUT = 5V20059144Efficiency vs Load Current - "Y"V IN = 2.7V, V OUT = 12V 20059145Efficiency vs Load Current - "Y"V IN = 3.3V, V OUT = 12V20059146Efficiency vs Load Current - "Y"V IN = 5V, V OUT = 12V20059147 10L M 2731Application HintsSELECTING THE EXTERNAL CAPACITORSThe best capacitors for use with the LM2731 are multi-layer ceramic capacitors. They have the lowest ESR (equivalent series resistance) and highest resonance frequency which makes them optimum for use with high frequency switching converters.When selecting a ceramic capacitor, only X5R and X7R di-electric types should be used. Other types such as Z5U and Y5F have such severe loss of capacitance due to effects of temperature variation and applied voltage, they may provide as little as 20% of rated capacitance in many typical applica-tions. Always consult capacitor manufacturer’s data curves before selecting a capacitor. High-quality ceramic capacitors can be obtained from Taiyo-Yuden, AVX, and Murata. SELECTING THE OUTPUT CAPACITORA single ceramic capacitor of value 4.7 µF to 10 µF will provide sufficient output capacitance for most applications. If larger amounts of capacitance are desired for improved line support and transient response, tantalum capacitors can be used. Aluminum electrolytics with ultra low ESR such as Sanyo Os-con can be used, but are usually prohibitively expensive. Typical AI electrolytic capacitors are not suitable for switching frequencies above 500 kHz due to significant ringing and temperature rise due to self-heating from ripple current. An output capacitor with excessive ESR can also reduce phase margin and cause instability.In general, if electrolytics are used, it is recommended that they be paralleled with ceramic capacitors to reduce ringing, switching losses, and output voltage ripple.SELECTING THE INPUT CAPACITORAn input capacitor is required to serve as an energy reservoir for the current which must flow into the coil each time the switch turns ON. This capacitor must have extremely low ESR, so ceramic is the best choice. We recommend a nomi-nal value of 2.2 µF, but larger values can be used. Since this capacitor reduces the amount of voltage ripple seen at the input pin, it also reduces the amount of EMI passed back along that line to other circuitry.FEED-FORWARD COMPENSATIONAlthough internally compensated, the feed-forward capacitor Cf is required for stability (see Basic Application Circuit). Adding this capacitor puts a zero in the loop response of the converter. The recommended frequency for the zero fz should be approximately 6 kHz. Cf can be calculated using the for-mula:Cf = 1 / (2 X π X R1 X fz)SELECTING DIODESThe external diode used in the typical application should be a Schottky diode. A 20V diode such as the MBR0520 is rec-ommended.The MBR05XX series of diodes are designed to handle a maximum average current of 0.5A. For applications exceed-ing 0.5A average but less than 1A, a Microsemi UPS5817 can be used.LAYOUT HINTSHigh frequency switching regulators require very careful lay-out of components in order to get stable operation and lownoise. All components must be as close as possible to theLM2731 device. It is recommended that a 4-layer PCB beused so that internal ground planes are available.As an example, a recommended layout of components isshown:20059116Recommended PCB Component LayoutSome additional guidelines to be observed:1.Keep the path between L1, D1, and C2 extremely short.Parasitic trace inductance in series with D1 and C2 willincrease noise and ringing.2.The feedback components R1, R2 and CF must be keptclose to the FB pin of U1 to prevent noise injection on theFB pin trace.3.If internal ground planes are available (recommended)use vias to connect directly to ground at pin 2 of U1, aswell as the negative sides of capacitors C1 and C2.SETTING THE OUTPUT VOLTAGEThe output voltage is set using the external resistors R1 andR2 (see Basic Application Circuit). A value of approximately13.3 kΩ is recommended for R2 to establish a divider currentof approximately 92 µA. R1 is calculated using the formula:R1 = R2 X (VOUT/1.23 − 1)SWITCHING FREQUENCYThe LM2731 is provided with two switching frequencies: the“X” version is typically 1.6 MHz, while the “Y” version is typi-cally 600 kHz. The best frequency for a specific applicationmust be determined based on the trade-offs involved:Higher switching frequency means the inductors and capac-itors can be made smaller and cheaper for a given outputvoltage and current. The down side is that efficiency is slightlylower because the fixed switching losses occur more fre-quently and become a larger percentage of total power loss.EMI is typically worse at higher switching frequencies be-cause more EMI energy will be seen in the higher frequencyspectrum where most circuits are more sensitive to such in-terference.LM273120059117Basic Application CircuitDUTY CYCLEThe maximum duty cycle of the switching regulator deter-mines the maximum boost ratio of output-to-input voltage thatthe converter can attain in continuous mode of operation. Theduty cycle for a given boost application is defined as:This applies for continuous mode operation.INDUCTANCE VALUEThe first question we are usually asked is: “How small can Imake the inductor?” (because they are the largest sized com-ponent and usually the most costly). The answer is not simpleand involves trade-offs in performance. Larger inductorsmean less inductor ripple current, which typically means lessoutput voltage ripple (for a given size of output capacitor).Larger inductors also mean more load power can be deliveredbecause the energy stored during each switching cycle is:E = L/2 X (lp)2Where “lp” is the peak inductor current. An important point toobserve is that the LM2731 will limit its switch current basedon peak current. This means that since lp(max) is fixed, in-creasing L will increase the maximum amount of power avail-able to the load. Conversely, using too little inductance maylimit the amount of load current which can be drawn from theoutput.Best performance is usually obtained when the converter isoperated in “continuous” mode at the load current range ofinterest, typically giving better load regulation and less outputripple. Continuous operation is defined as not allowing the in-ductor current to drop to zero during the cycle. It should benoted that all boost converters shift over to discontinuous op-eration as the output load is reduced far enough, but a largerinductor stays “continuous” over a wider load current range.To better understand these trade-offs, a typical applicationcircuit (5V to 12V boost with a 10 µH inductor) will be ana-lyzed. We will assume:VIN= 5V, VOUT= 12V, VDIODE= 0.5V, VSW= 0.5VSince the frequency is 1.6 MHz (nominal), the period is ap-proximately 0.625 µs. The duty cycle will be 62.5%, whichmeans the ON time of the switch is 0.390 µs. It should benoted that when the switch is ON, the voltage across the in-ductor is approximately 4.5V.Using the equation:V = L (di/dt)We can then calculate the di/dt rate of the inductor which isfound to be 0.45 A/µs during the ON time. Using these facts,we can then show what the inductor current will look like dur-ing operation:2005911810 µH Inductor Current,5V–12V Boost (LM2731X)During the 0.390 µs ON time, the inductor current ramps up0.176A and ramps down an equal amount during the OFFtime. This is defined as the inductor “ripple current”. It can alsobe seen that if the load current drops to about 33 mA, theinductor current will begin touching the zero axis which meansit will be in discontinuous mode. A similar analysis can beperformed on any boost converter, to make sure the ripplecurrent is reasonable and continuous operation will be main-tained at the typical load current values.MAXIMUM SWITCH CURRENTThe maximum FET switch current available before the currentlimiter cuts in is dependent on duty cycle of the application.This is illustrated in the graphs below which show typical val-ues of switch current for both the "X" and "Y" versions as afunction of effective (actual) duty cycle: 12LM273120059150Switch Current Limit vs Duty Cycle - "X"20059151Switch Current Limit vs Duty Cycle - "Y"CALCULATING LOAD CURRENTAs shown in the figure which depicts inductor current, the load current is related to the average inductor current by the rela-tion:I LOAD = I IND (AVG) x (1 - DC)Where "DC" is the duty cycle of the application. The switch current can be found by:I SW = I IND (AVG) + ½ (I RIPPLE )Inductor ripple current is dependent on inductance, duty cy-cle, input voltage and frequency:I RIPPLE = DC x (V IN -V SW ) / (f x L)combining all terms, we can develop an expression which al-lows the maximum available load current to be calculated:The equation shown to calculate maximum load current takes into account the losses in the inductor or turn-OFF switching losses of the FET and diode. For actual load current in typical applications, we took bench data for various input and outputvoltages for both the "X" and "Y" versions of the LM2731 and displayed the maximum load current available for a typical device in graph form:20059148Max. Load Current (typ) vs V IN - "X"20059149Max. Load Current (typ) vs V IN - "Y"DESIGN PARAMETERS V SW AND I SWThe value of the FET "ON" voltage (referred to as V SW in the equations) is dependent on load current. A good approxima-tion can be obtained by multiplying the "ON Resistance" of the FET times the average inductor current.FET on resistance increases at V IN values below 5V, since the internal N-FET has less gate voltage in this input voltage range (see Typical performance Characteristics curves).Above V IN = 5V, the FET gate voltage is internally clamped to 5V.The maximum peak switch current the device can deliver is dependent on duty cycle. For higher duty cycles, see Typical performance Characteristics curves.THERMAL CONSIDERATIONSAt higher duty cycles, the increased ON time of the FET means the maximum output current will be determined by power dissipation within the LM2731 FET switch. The switch power dissipation from ON-state conduction is calculated by:P (SW) = DC x I IND (AVE)2 x R DS (ON)LM2731There will be some switching losses as well, so some derating needs to be applied when calculating IC power dissipation.INDUCTOR SUPPLIERSRecommended suppliers of inductors for this product include,but are not limited to Sumida, Coilcraft, Panasonic, TDK and Murata. When selecting an inductor, make certain that the continuous current rating is high enough to avoid saturation at peak currents. A suitable core type must be used to mini-mize core (switching) losses, and wire power losses must be considered when selecting the current rating.SHUTDOWN PIN OPERATIONThe device is turned off by pulling the shutdown pin low. If this function is not going to be used, the pin should be tied directly to V IN . If the SHDN function will be needed, a pull-up resistor must be used to V IN (approximately 50k-100k Ω recommend-ed). The SHDN pin must not be left unterminated. 14L M 2731Physical Dimensions inches (millimeters) unless otherwise noted5-Lead SOT-23 PackageOrder Number LM2731XMF, LM2731XMFX, LM2731YMF or LM2731YMFXNS Package Number MF05A LM2731NotesL M 2731 0.6/1.6 M H z B o o s t C o n v e r t e r s W i t h 22V I n t e r n a l F E T S w i t c h i n S O T -23THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIG HT TO MAKE CHANG ES TO SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NO LICENSE, WHETHER EXPRESS,IMPLIED, ARISING BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIG HTS IS G RANTED BY THIS DOCUMENT.TESTING AND OTHER QUALITY CONTROLS ARE USED TO THE EXTENT NATIONAL DEEMS NECESSARY TO SUPPORT NATIONAL’S PRODUCT WARRANTY. EXCEPT WHERE MANDATED BY G OVERNMENT REQUIREMENTS, TESTING OF ALL PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. NATIONAL ASSUMES NO LIABILITY FOR APPLICATIONS ASSISTANCE OR BUYER PRODUCT DESIG N. BUYERS ARE RESPONSIBLE FOR THEIR PRODUCTS AND APPLICATIONS USING NATIONAL COMPONENTS. PRIOR TO USING OR DISTRIBUTING ANY PRODUCTS THAT INCLUDE NATIONAL COMPONENTS, BUYERS SHOULD PROVIDE ADEQUATE DESIGN, TESTING AND OPERATING SAFEGUARDS.EXCEPT AS PROVIDED IN NATIONAL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NATIONAL ASSUMES NO LIABILITY WHATSOEVER, AND NATIONAL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY RELATING TO THE SALE AND/OR USE OF NATIONAL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRING EMENT OF ANY PATENT, COPYRIG HT OR OTHER INTELLECTUAL PROPERTY RIGHT.LIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COM PONENTS IN LIFE SUPPORT DEVICES OR SYSTEM S WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF THE CHIEF EXECUTIVE OFFICER AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness.National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders.Copyright© 2007 National Semiconductor CorporationFor the most current product information visit us at National Semiconductor Americas Customer Support Center Email:new.feedback@ Tel: 1-800-272-9959National Semiconductor Europe Customer Support Center Fax: +49 (0) 180-530-85-86Email: europe.support@ Deutsch Tel: +49 (0) 69 9508 6208English Tel: +49 (0) 870 24 0 2171Français Tel: +33 (0) 1 41 91 8790National Semiconductor Asia Pacific Customer Support Center Email: ap.support@National Semiconductor Japan Customer Support Center Fax: 81-3-5639-7507Email: jpn.feedback@ Tel: 81-3-5639-7560。
UCC27325 中文资料
APPLICATIONS D Switch Mode Power Supplies D DC/DC Converters D Motor Controllers D Line Drivers DESCRIPTION
The UCC37323/4/5 family of high-speed dual MOSFET drivers can deliver large peak currents into capacitive loads.Three standard logic options are offered – dual-inverting, dual-noninverting and one-inverting and one-noninverting driver. The thermally enhanced 8-pin PowerPADTM MSOP package (DGN) drastically lowers the thermal resistance to improve long-term reliability. It is also offered in the standard SOIC-8 (D) or PDIP-8 (P) packages. Using a design that inherently minimizes shoot-through current, these drivers deliver 4-A of current where it is needed most at the Miller plateau region during the MOSFET switching transition. A unique BiPolar and MOSFET hybrid output stage in parallel also allows efficient current sourcing and sinking at low supply voltages.
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All dimensions are in inches. Sustrate material: .025 thick Al2O3 (Er = 9.6)
C1 : 22 pF Chip Capacitor C2 : 1500 pF RF Feedthrough
L1 : No. 26 Wire, 2 Turn, 0.08 Inch I.D. L2 : No. 26 Wire, 2 Turn, 0.08 Inch I.D.
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元器件交易网
AM82731-025
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
4/4
BVCBO BVEBO BVCER
ICES hFE
IC = 15mA IE = 2mA IC = 15mA VCE = 0V VCE = 5V
Test Conditions
IE = 0mA IC = 0mA RBE = 10Ω VBE = 40V IC = 1.5A
DYNAMIC
S ymb ol
POUT ηc
The AM82731-025 is supplied in the Hermetic Metal/Ceramic package with internal Input/Output impedance matching circuitry, and is intended for military and other high reliability applications.
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元器件交易网
IMPEDANCE DATA
TYPICAL INPUT IMPEDANCES
ZIN
TYPICAL COLLECTOR LOAD IMPEDANCES ZCL
FREQ. L = 2.7 GHz • = 2.8 GHz M = 2.9 GHz • = 3.0 GHz H = 3.1 GHz
.400 x .400 2LFL (S036) hermetically sealed
ORDER CODE AM82731-025
BRANDING 82731-25
DESCRIPTION
The AM82731-025 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.
VCC
Collector-Supply Voltage*
TJ
Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
100
Unit
W
4
A
46
V
250
°C
− 65 to +200
°C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance*
Min.
55
Valu e Typ.
—
Max.
—
Unit
V
3.5 —10 mA
30 — — —
Min.
25
Valu e Typ.
30
Max.
—
Unit
W
30 36 — %
6.2 7.0 — dB
TYPICAL PERFORMANCE
TYPICAL BROADBAND P ER FO RM A NC E
PIN CONNECTION
1. Collector 2. Base
3. Emitter 4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
Pa ra met er
Power Dissipation* (TC ≤ 50°C)
Ic
Device Current*
元器件交易网
AM82731-025
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
. LOW PARASITIC, DOUBLE LEVEL METAL DESIGN
. REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . 3:1 VSWR @ 1 dB OVERDRIVE . LOW RF THERMAL RESISTANCE . INPUT/OUTPUT IMPEDANCE MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE . POUT = 25 W MIN. WITH 6.2 dB GAIN
This device is capable of operation over a wide range of pulse widths, duty cycles, and temperatures and can withstand a 3:1 output VSWR with a +1dB input over drive. Low RF thermal resistance, refractory/gold metallization, and automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics).
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
*Applies only to rated RF amplifier operation
August 1992
2.0
°C/W
1/4
元器件交易网
AM82731-025
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC
S ymb ol
f = 2.7 — 3.1GHz f = 2.7 — 3.1GHz
GPB f = 2.7 — 3.1GHz
N ot e:
Pulse Width = 100 µSec Duty Cycle = 10%
Test Conditions
PIN = 6.0W PIN = 6.0W PIN = 6.0W
VCC = 40V VCC = 40V VCC = 40V
ZIN(Ω) 12.0 + j 3.0 9.5 + j 2.5 6.5 + j 0.0 6.0 −j 1.5 5.0 −j 3.0
ZCL(Ω) 15.0 − j 4.0 17.0 − j 3.0 15.5 − j 3.0 14.5 − j 3.0 11.0 − j 3.0
TEST CIRCUIT
AM82731-025