ZMM33稳压二极管原厂DCY品牌推荐

ZMM27稳压二极管原厂DCY品牌推荐

2.0
5
1.80...2.15
<85
<600
1
<100
<200
1
-0.09...-0.06
ZMM 2V2
2.2
5
2.08...2.33
<85
<600
1
<75
<160
1
-0.09...-0.06
ZMM 2V4
2.4
5
2.28...2.56
<85
<600
1
<50
<100
1
-0.09...-0.06
ZMM 2V7
6
ZMM 39
Test current Iz 5mA
ZMM 43
ZMM 51 ZMM 47
ZMM... Tj=25o C
4
2
0
0
10
20
30
40
50
60
70
80
90
100 V
Vz
Forward characteristics
mA
3
10
10 2 iF
10
1
10 -1
-2
10 10-3
10-4 10-5
ZMM 18 ZMM 22 ZMM 27
ZMM... Tj=25o C
ZMM 33 ZMM 36
0
0
10
20
30
40 V
Vz

ZMM 1...ZMM200
Breakdown characteristics
Tj = constant (pulsed)
mA 10

MM5Z5V6T1G稳压二极管原厂DCY品牌推荐

Zener Voltage Regulators150mW SOD–523Surface MountWe declare that the material of product compliance with RoHS requirements.ORDERING INFORMATIONDevice Package Shipping MM5ZXXXT1GSOD-5233000/Tape&ReelThis series of Zener diodes is packaged in a SOD–523surface mount package that has a power dissipation of 100mW.They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium.They are well suited for applications such as cellular phones,hand held portables,and high density PC boards.Specification Features:•Standard Zener Breakdown Voltage Range –2.4V to 75V •Steady State Power Rating of 200mW•Small Body Outline Dimensions:0.047"x 0.032"(1.20mm x 0.80mm)•Low Body Height:0.028"(0.7mm)•ESD Rating of Class 3(>16kV)per Human Body ModelMechanical Characteristics:CASE:Void-free,transfer-molded,thermosetting plastic Epoxy Meets UL 94V-0LEAD FINISH:100%Matte Sn (Tin)QUALIFIED MAX REFLOW TEMPERATURE:260°C Device Meets MSL 1Requirements MOUNTING POSITION:AnyMAXIMUM RATINGSRatingSymbol Max Unit Total Device Dissipation FR−5Board,P D150mW@T A =25︒C Junction and Storage T J,Tstg−65to ︒CTemperature Range+150Maximum ratings are those values beyond which devicedamage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions)and are not valid simultaneously.If these limits are exceeded,device functional operation is not implied,damage may occur and reliability may be affected.MM5Z2V4T1G SERIES12CATHODE ANODEMARKING DIAGRAMxx dxx=Specific Device Code d =Date CodeSOD–523MM5Z2V4T1G SERIES ELECTRICAL CHARACTERISTICS I(T A=25︒C unless otherwise noted,I FV F=0.9V Max.@I F=10mA for all types)Symbol ParameterVZ Reverse Zener Voltage@I ZT IZT Reverse Current VZVRVZ ZT Maximum Zener Impedance@I I R VFZT IZTIZK Reverse CurrentZZK Maximum Zener Impedance@I ZKIR Reverse Leakage Current@V RV R Reverse VoltageI F Forward Current Zener Voltage Regulator V F Forward Voltage@I FQV Z Maximum Temperature Coefficient of V ZC Max.Capacitance@V R=0and f=1MHz100(%)80DISS IP ATI ON 60 40POWER20255075100125150TEMPERATURE(︒C)Figure1.Steady State Power Derating MM5Z2V4T1G SERIESELECTRICAL CHARACTERISTICS (T A =25︒C unless otherwise noted,V F =0.9V Max.@I F =10mA for all types)Zener Voltage (Note 1)Zener Impedance Leakage CurrentQ V Z C ZZT(mV/k)@V =0V(Volts)@I@I ZT Z@II @VRZZKR@IZTf =1MHzDevice ZTZKRDevice Marking Min Nom Max mA W W mA m A Volts Min Max pF MM5Z2V4T1G 00 2.2 2.4 2.651001000 1.050 1.0−3.50450MM5Z2V7T1G 01 2.5 2.7 2.951001000 1.020 1.0−3.50450MM5Z3V0T1G 02 2.8 3.0 3.251001000 1.010 1.0−3.50450MM5Z3V3T1G 05 3.1 3.3 3.55951000 1.05 1.0−3.50450MM5Z3V6T1G 06 3.4 3.6 3.85901000 1.05 1.0−3.50450MM5Z3V9T1G 07 3.7 3.9 4.15901000 1.03 1.0−3.5−2.5450MM5Z4V3T1G 08 4.0 4.3 4.65901000 1.03 1.0−3.50450MM5Z4V7T1G 09 4.4 4.7 5.0580800 1.03 2.0−3.50.2260MM5Z5V1T1G 0A 4.8 5.1 5.4560500 1.02 2.0−2.7 1.2225MM5Z5V6T1G 0C 5.2 5.6 6.0540400 1.01 2.0−2.0 2.5200MM5Z6V2T1G 0E 5.8 6.2 6.6510100 1.03 4.00.4 3.7185MM5Z6V8T1G 0F 6.4 6.87.2515160 1.02 4.0 1.2 4.5155MM5Z7V5T1G 0G 7.07.57.9515160 1.01 5.0 2.5 5.3140MM5Z8V2T1G 0H 7.78.28.7515160 1.00.7 5.0 3.2 6.2135MM5Z9V1T1G 0K 8.59.19.6515160 1.00.27.0 3.87.0130MM5Z10VT1G 0L 9.41010.6520160 1.00.18.0 4.58.0130MM5Z11VT1G 0M 10.41111.6520160 1.00.18.0 5.49.0130MM5Z12VT1G 0N 11.41212.752580 1.00.18.0 6.010130MM5Z13VT1G 0P 12.413.2514.153080 1.00.18.07.011120MM5Z15VT1G 0T 14.31515.8530200 1.00.0510.59.213110MM5Z16VT1G 0U 15.316.217.1240200 1.00.0511.210.414105MM5Z18VT1G 0W 16.81819.1245225 1.00.0512.612.416100MM5Z20VT1G 0Z 18.82021.2255225 1.00.0514.014.41885MM5Z22VT1G 1020.82223.3255250 1.00.0515.416.42085MM5Z24VT1G 1122.824.225.6270120 1.00.0516.818.42280MM5Z27VT1G 1225.12728.9280300 1.00.0518.921.425.370MM5Z30VT1G 14283032280300 1.00.0521.024.429.470MM5Z33VT1G 18313335280300 1.00.0523.227.433.470MM5Z36VT1G 19343638290500 1.00.0525.230.437.470MM5Z39VT1G 203739412130500 1.00.0527.333.441.245MM5Z43VT1G 214043461150500 1.00.0530.137.646.640MM5Z47VT1G 1A 4447501170500 1.00.0532.942.051.840MM5Z51VT1G 1C 4851541180500 1.00.0535.746.657.240MM5Z56VT1G 1D 5256601200500 1.00.0539.252.263.840MM5Z62VT1G 1E 5862661215500 1.00.0543.458.871.635MM5Z68VT1G 1F 6468721240500 1.00.0547.665.679.835MM5Z75VT1G1G70757912555001.00.0552.573.488.6351.Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25︒C.MM5Z2V4T1G SERIESSC-79/SOD-523DIMENSIONS (mm are the original dimensions)UNIT A b p c D E H E V m m0.70.350.2 1.30.9 1.70.150.50.250.11.10.71.5Note1.The marking bar indicates the cathode.OUTLINE REFERENCES EUROPEAN ISSUE DATEVERSION IECJEDECEIAJ PROJECTIONSOD523SC-7998-11-25。

DC4430(AO4430)场效应MOS管厂家DCY品牌推荐

TJ, Tstg RθJA
-55 to 150 75
oC oC/W
-1-

ELECTRICAL CHARACTERISTICS 一般电气特性
DC4430
Parameter 参数
符号
Test Condition 测试条件
最小值典型值最大值
单位
Static 静态参数
VDS = 24V, VGS = 0V
1
uA
Gate Body Leakage 漏极短路时截止栅电流
IGSS
VGS = ± 20V, VDS = 0V
± 100
nA
Forward Transconductance 正向跨导 Gate Resistance 栅极电阻
gfs
VDS = 5V, ID = 18A
ID
IDM
TA = 25oC PD
TA = 75oC
18 A
80
3 W
2.1
Operating Junction and Storage Temperature Range 使用及储存温度 Junction-to-Ambient Thermal Resistance (PCB mounted) 结环热阻
0.35
0.49
1.35
1.75
0.375 REF. 45°
1.27 TYP.
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) 25 oC 极限参数和热特性
Parameter 极限参数
Symbol 符号
Turn-Off Fall Time 关断下降时间

ZMM100稳压二极管原厂DCY品牌推荐

ZMM 6V8
6.8
5
6.4...7.2
<8
<150
1
<0.1
<2
3
0.03...0.07
ZMM 7V5
7.5
5
7.0...7.9
<7
<50
1
<0.1
<2
5
0.03...0.07
ZMM 8V2
8.2
5
7.7...8.7
<7
<50
1
<0.1
<2
6.2
0.03...0.08
ZMM 9V1
9.1
5
8.5...9.6
These diodes are also available in DO-35 case with the type designation BZX55C...
ZMM 1...ZMM200
Absolute Maximum Ratings (Ta = 25oC)
Symbol
Value
Unit
Power Dissipation
K/W
3
10
7
ZMM...
5
r thA
4
3
2
0.5
102
7 0.2
5
4 0.1
3
0.05
2
0.02
0.01 10
7
V=0
5 4 3
2
1 10-5 10-4
tp
tp V= T
10-3
-2
10
T
10 -1 tp
PI
1
10 S

SM24 SOT-23TVS管原厂DCY品牌推荐

SM05 THRU SM36PROTECTION PRODUCTS TVS Diode ArrayDescriptionFeaturesCircuit Diagram Schematic & PIN ConfigurationThe SM series of transient voltage suppressors (TVS)are designed to protect components which areconnected to data and transmission lines from voltage surges caused by ESD (electrostatic discharge), EFT (electrical fast transients), and lightning .TVS diodes are characterized by their high surge capability, low operating and clamping voltages, and fast response time. This makes them ideal for use as board level protection of sensitive semiconductorcomponents. The dual-junction common-anode design allows the user to protect one bidirectional data line or two unidirectional lines. The low profile SOT23package allows flexibility in the design of crowded circuit boards.The SM series will meet the surge requirements of IEC 61000-4-2 (Formerly IEC 801-2), Level 4, Human Body Model for air and contact discharge.ApplicationsMechanical Characteristicsu Cellular Handsets and Accessories u Portable Electronics u Industrial Controls u Set-Top BoxuServers, Notebook, and Desktop PCu 300 watts peak pulse power (tp = 8/20µs)u Transient protection for data & power lines toIEC 61000-4-2 (ESD) 15kV (air), 8kV (contact)IEC 61000-4-4 (EFT) 40A (tp=5/50ns)IEC 61000-4-5 (Lightning) 12A (tp=1.2/50µs)u Protects one bidirectional line or two unidirectional linesu Working Voltages: 5V, 12V, 15V, 24 and 36V u Low clamping voltageu Solid-state silicon avalanche technologyu JEDEC SOT23 packageu Molding compound flammability rating: UL 94V-0u Marking : Marking Codeu Packaging : Tape and Reel per EIA 481Absolute Maximum RatingElectrical Characteristics50M S re t e m a r a P l o b m y S sn o i t i d n o C mu m i n i M la c i p y T mu m i x a M s t i n U e g a t l o V f f O -d n a t S e s r e v e R V M W R 5V e g a t l o V n w o d k a e r B e s r e v e R V R B I t A m 1=6V t n e r r u C e g a k a e L e s r e v e R I R V M W R C °52=T ,V 5=02A µeg a t l o V g n i p m a l C V C I P P ,A 1=s µ02/8=p t 8.9V t n e r r u C e s l u P k a e P m u m i x a M I p p s µ02/8=p t 71A e c n a t i c a p a C n o i t c n u J C j 2o t 1n i P V R z H M 1=f ,V 0=053F p ec n a t i c a p a C n o i t c n u J C jd n a 3o t 1n i P 3o t 2n i P V R zH M 1=f ,V 0=004Fp gn i t a R l o b m y S e u l a V s t i n U )s µ02/8=p t (r e w o P e s l u P k a e P P k p 003s t t a W t n e i b m A o t n o i t c n u J ,e c n a t s i s e R l a m r e h T q A J 655W /C °e r u t a r e p m e T g n i r e d l o S d a e L T L ).c e s 01(062C °e r u t a r e p m e T g n i t a r e p O T J 521+o t 55-C °er u t a r e p m e T e g a r o t S T GT S 051+o t 55-C°21M S re t e m a r a P l o b m y S sn o i t i d n o C mu m i n i M la c i p y T mu m i x a M s t i n U e g a t l o V f f O -d n a t S e s r e v e R V M W R 21V e g a t l o V n w o d k a e r B e s r e v e R V R B I t A m 1=3.31V t n e r r u C e g a k a e L e s r e v e R I R V M W R C°52=T ,V 21=1A µeg a t l o V g n i p m a l C V C I P P ,A 1=s µ02/8=p t 91V t n e r r u C e s l u P k a e P m u m i x a M I p p s µ02/8=p t 21A e c n a t i c a p a C n o i t c n u J C j 2o t 1n i P V R z H M 1=f ,V 0=021F p ec n a t i c a p a C n o i t c n u J C jd n a 3o t 1n i P 3o t 2n i P V R zH M 1=f ,V 0=051FpElectrical Characteristics (Continued)51M S re t e m a r a P l o b m y S s n o i t i d n o C m u m i n i M l a c i p y T mu m i x a M s t i n U e g a t l o V f f O -d n a t S e s r e v e R V M W R 51V e g a t l o V n w o d k a e r B e s r e v e R V R B I t A m 1=7.61Vt n e r r u C e g a k a e L e s r e v e R I R V M W R C °52=T ,V 51=1A µeg a t l o V g n i p m a l C V C I P P sµ02/8=p t ,A 1=42V t n e r r u C e s l u P k a e P m u m i x a M I p p s µ02/8=p t 01A e c n a t i c a p a C n o i t c n u J C j 2o t 1n i P V R z H M 1=f ,V 0=57F p e c n a t i c a p a C n o i t c n u J C j3o t 2d n a 3o t 1n i P V R zH M 1=f ,V 0=001Fp 42M S re t e m a r a P l o b m y S sn o i t i d n o C mu m i n i M l a c i p y T mu m i x a M s t i n U e g a t l o V f f O -d n a t S e s r e v e R V M W R 42V e g a t l o V n w o d k a e r B e s r e v e R V R B I t A m 1=7.62Vt n e r r u C e g a k a e L e s r e v e R I R V M W R C °52=T ,V 42=1A µeg a t l o V g n i p m a l C V C I P P sµ02/8=p t ,A 1=34V t n e r r u C e s l u P k a e P m u m i x a M I p p s µ02/8=p t 5A e c n a t i c a p a C n o i t c n u J C j 2o t 1n i P V R z H M 1=f ,V 0=05F p ec n a t i c a p a C n o i t c n u J C j3o t 2d n a 3o t 1n i P V R zH M 1=f ,V 0=06Fp 63M S re t e m a r a P l o b m y S s n o i t i d n o C m u m i n i M l a c i p y T mu m i x a M s t i n U e g a t l o V f f O -d n a t S e s r e v e R V M W R 63V e g a t l o V n w o d k a e r B e s r e v e R V R B I t A m 1=04Vt n e r r u C e g a k a e L e s r e v e R I R V M W R C °52=T ,V 63=1A µeg a t l o V g n i p m a l C V C I P P sµ02/8=p t ,A 1=06V t n e r r u C e s l u P k a e P m u m i x a M I p p s µ02/8=p t 4A e c n a t i c a p a C n o i t c n u J C j 2o t 1n i P V R z H M 1=f ,V 0=04F p ec n a t i c a p a C n o i t c n u J C j3o t 2d n a 3o t 1n i P V R zH M 1=f ,V 0=54FpTypical CharacteristicsNon-Repetitive Peak Pulse Power vs. Pulse Time1020304050607080901001100255075100125150Ambient Temperature - T A (oC)% o f R a t e d P o w e r o r I P PPower Derating CurvePulse Waveform0102030405060708090100110051015202530Time (µs)P e r c e n t o f I P Ple v e L t s r i F k a e P t n e r r u C )A (k a e P t n e r r u C s n 03t a )A (k a e P t n e r r u C s n 06t a )A (t s eT eg a t l o V tc a t n o C ()e g r a h c s i D )V k (ts e T e g a t l o V r i A ()e g r a h c s i D )V k (15.74822251844435.2221668436188510.010.11100.11101001000Pulse Duration - tp (µs)P e a k P u l s e P o w e r - P P P (k W )IEC 61000-4-2 Discharge ParametersESD Pulse Waveform (Per IEC 61000-4-2)Applications InformationDevice Schematic & Pin Configuration Device Connection OptionsThe SM series is designed to protect one bidirectionalor two unidirectional data or I/O lines operating at 5 to36 volts. Connection options are as follows:l Bidirectional: Pin 1 is connected to the data lineand pin 2 is connected to ground (Since the deviceis symmetrical, these connections may be re-versed). For best results, the ground connectionshould be made directly to a ground plane on theboard. The path length should be kept as short aspossible to minimize parasitic inductance. Pin 3 isnot connected.l Unidirectional: Data lines are connected to pin 1 and pin 2. Pin 3 is connected to ground. For best results, this pin should be connected directly to aground plane on the board. The path length should be kept as short as possible to minimize parasiticinductance.Circuit Board Layout Recommendations for Suppres-sion of ESD.Good circuit board layout is critical for the suppression of fast rise-time transients such as ESD. The following guidelines are recommended (Refer to application note SI99-01 for more detailed information):l Place the TVS near the input terminals or connec-tors to restrict transient coupling.l Minimize the path length between the TVS and the protected line.l Minimize all conductive loops including power and ground loops.l The ESD transient return path to ground should be kept as short as possible.l Never run critical signals near board edges.l Use ground planes whenever possible.RS-232 Transceiver ProtectionExampleOutline Drawing - SOT23Ordering Informationr e b m u N t r a P g n i k r o W e g a t l o V le e R r e p y t Q e z i S l e e R C T .50M S V 5000,3h c n I 7G T .50M S V 5000,01h c n I 31C T .21M S V 21000,3h c n I 7G T .21M S V 21000,01h c n I 31C T .51M S V 51000,3h c n I 7G T .51M S V 51000,01h c n I 31C T .42M S V 42000,3h c n I 7G T .42M S V 42000,01h c n I 31CT .63M S V63000,3hc n I 7Marking Codesre b m u N t r a P g n i k r a M e d o C 50M S 50M 21M S 21M 51M S 51M 42M S 42M 63M S 63M。

DC1234推荐LDO原厂DCY品牌

Output Voltage : 50mV increments A
e.g. ②=1,③=5,④=A 1.55V
Active 'High'
①
B
(no pull-down resistor built in)
Package Type
⑤
M
SOT-23-5L
C
Active 'Low' (pull-up resistor built in)
■ Features
Output Voltage Range: 0.85V to 1.8V (selectable in 50mV steps)
Highly Accurate : ±2%（less than 1.5V is ±30mV) Dropout Voltage : 300mV @ 100mA (1.5V type) High Ripple Rejection: 60dB (10kHz) Low Power Consumption: 50μA (TYP.) Maximum Output Current : 300mA（VIN≥2.5V） Standby Current : less than 0.1μA Internal protector: current limiter and short protector Small packages: SOT-23-5,SOT-353 and other
■ Applications
Mobile phones Cordless phones Modem Portable games
Portable AV equipment Reference voltage Battery powered equipment PCMCIA cards

稳压管z33 参数

稳压管z33 参数摘要：一、稳压管Z33的基本概念二、稳压管Z33的参数解析1.电压参数2.电流参数3.功率参数4.温度特性5.动态响应三、如何选择合适的稳压管Z33四、稳压管Z33的应用领域五、总结正文：一、稳压管Z33的基本概念稳压管Z33是一种常用的电子元件，主要用于电压稳压电路，确保输出电压在一定范围内保持稳定。

它具有广泛的应用，如电源模块、电子设备等。

稳压管Z33在我国的电子行业中有着广泛的应用，对其深入了解和掌握对于电子工程师来说至关重要。

二、稳压管Z33的参数解析1.电压参数：稳压管Z33的电压参数包括输入电压、输出电压和额定电压。

在选择稳压管时，应根据实际应用场景选择合适的电压参数，确保稳压管在工作过程中不会超过其额定电压。

2.电流参数：稳压管Z33的电流参数包括最大输入电流、最大输出电流和持续电流。

这些参数决定了稳压管的负载能力。

在选择稳压管时，应根据电路需求选择合适的电流参数，以确保稳压管能够满足电路的电流需求。

3.功率参数：稳压管Z33的功率参数表示其在工作过程中能够承受的最大功率。

在选择稳压管时，应结合电路的功耗需求，选择具有足够功率容量的稳压管。

4.温度特性：稳压管Z33的温度特性表示其在不同温度下的工作性能。

温度特性越好，稳压管的稳定性越高。

在选择稳压管时，应考虑实际应用场景的温度范围，选择具有合适温度特性的稳压管。

5.动态响应：稳压管Z33的动态响应表示其在负载变化时的电压调整速度。

动态响应越好，稳压管在负载变化时的输出电压稳定性越好。

在选择稳压管时，应根据电路对动态响应的需求，选择具有合适动态响应的稳压管。

三、如何选择合适的稳压管Z33在选择稳压管Z33时，应根据实际应用场景和电路需求，综合考虑电压、电流、功率、温度特性、动态响应等参数，选择性能合适的稳压管。

此外，还需关注稳压管的封装、尺寸、价格等因素，确保选型合理、经济。

四、稳压管Z33的应用领域稳压管Z33在我国的电子行业中有着广泛的应用，如电源模块、通信设备、电子仪器、家用电器等领域。

ZMM7V5稳压二极管原厂DCY品牌推荐

ቤተ መጻሕፍቲ ባይዱ
5
Ctot
4
3
2
VR=1V VR=2V
ZMM... Tj=25o C
100
7
VR=1V
5
VR=2V
4 3
2
10 1
2 3 4 5 10
2 3 4 5 100V Vz at Iz=5 mA
ZMM 1...ZMM200
Dynamic resistance versus Zener current
1000
5 4
r zj
3
2
ZMM... Tj=25o C
100
5 4 3
2
10
2.7
ZMM1
5
3.6
4
4.7
3
5.1
2
1
ZMM5.6
0.1 2
5
1
2
5 10 2
5 100mA
1
<0.1
<2
24
0.04...0.12
ZMM 36
36
5
34...38
<80
<220
1
<0.1
<2
27
0.04...0.12
ZMM 39
39
2.5
37...41
<90
<500
0.5
<0.1
<5
30
0.04...0.12
ZMM 43
43
2.5
40...46
<90
<500
0.5
<0.1
<5
33
0.04...0.12

SS34 SMC(DO-214AB)肖特基二极管原厂DCY品牌推荐

SS32 THRU SS36SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERReverse Voltage -20 to 60 Volts Forward Current -3.0 AmperesFEATURES♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0♦ For surface mount applications ♦ Low profile package♦ Built-in strain relief, ideal for automated placement ♦ Easy pick and place ♦ Metal silicon junction, majority carrier conduction♦ Low power loss, high efficiency♦ High current capability, low forward voltage drop♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ High temperature soldering:250°C/10 seconds at terminalsMECHANICAL DATACase:JEDEC DO-214AB molded plastic bodyTerminals:Solder plated, solderable per MIL-STD-750,Method 2026Polarity:Color band denotes cathode end Weight:0.007 ounce 0.25 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.SYMBOLS SS32SS33SS34SS35SS36UNITSDevice marking codeS2S3S4S5S6Maximum repetitive peak reverse voltage V RRM 2030405060Volts Maximum RMS voltage V RMS 1421283542Volts Maximum DC blocking voltageV DC 2030405060Volts Maximum average forward rectified current at T L (SEE FIG.1) (NOTE 2)I (AV) 3.0Amps Peak forward surge current8.3ms single half sine-wave superimposed on I FSM100.0Ampsrated load (JEDEC Method)Maximum instantaneous forward voltage at 3.0A(NOTE 1)V F 0.500.75Volts Maximum DC reverse current (NOTE 1)T A =25°C 0.5at rated DC blocking voltage T A =100°C I R 20.010.0mA Typical thermal resistance (NOTE 2)R ΘJA 55.0R ΘJL 17.0°C/WOperating junction temperature range T J -55 to +125-55 to +150°C Storage temperature rangeT STG-55 to +150°CNOTES:(1) Pulse test:300µs pulse width, 1% duty cycle(2) P .C.B.mounted 0.55 x 0.55”(14 x 14mm) copper pad areasDO-214ABDimensions in inches and (millimeters)。

MM5Z4V3T1G稳压二极管原厂DCY品牌推荐

Zener Voltage Regulators150mW SOD–523Surface MountWe declare that the material of product compliance with RoHS requirements.ORDERING INFORMATIONDevice Package Shipping MM5ZXXXT1GSOD-5233000/Tape&ReelThis series of Zener diodes is packaged in a SOD–523surface mount package that has a power dissipation of 100mW.They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium.They are well suited for applications such as cellular phones,hand held portables,and high density PC boards.Specification Features:•Standard Zener Breakdown Voltage Range –2.4V to 75V •Steady State Power Rating of 200mW•Small Body Outline Dimensions:0.047"x 0.032"(1.20mm x 0.80mm)•Low Body Height:0.028"(0.7mm)•ESD Rating of Class 3(>16kV)per Human Body ModelMechanical Characteristics:CASE:Void-free,transfer-molded,thermosetting plastic Epoxy Meets UL 94V-0LEAD FINISH:100%Matte Sn (Tin)QUALIFIED MAX REFLOW TEMPERATURE:260°C Device Meets MSL 1Requirements MOUNTING POSITION:AnyMAXIMUM RATINGSRatingSymbol Max Unit Total Device Dissipation FR−5Board,P D150mW@T A =25︒C Junction and Storage T J,Tstg−65to ︒CTemperature Range+150Maximum ratings are those values beyond which devicedamage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions)and are not valid simultaneously.If these limits are exceeded,device functional operation is not implied,damage may occur and reliability may be affected.MM5Z2V4T1G SERIES12CATHODE ANODEMARKING DIAGRAMxx dxx=Specific Device Code d =Date CodeSOD–523MM5Z2V4T1G SERIES ELECTRICAL CHARACTERISTICS I(T A=25︒C unless otherwise noted,I FV F=0.9V Max.@I F=10mA for all types)Symbol ParameterVZ Reverse Zener Voltage@I ZT IZT Reverse Current VZVRVZ ZT Maximum Zener Impedance@I I R VFZT IZTIZK Reverse CurrentZZK Maximum Zener Impedance@I ZKIR Reverse Leakage Current@V RV R Reverse VoltageI F Forward Current Zener Voltage Regulator V F Forward Voltage@I FQV Z Maximum Temperature Coefficient of V ZC Max.Capacitance@V R=0and f=1MHz100(%)80DISS IP ATI ON 60 40POWER20255075100125150TEMPERATURE(︒C)Figure1.Steady State Power Derating MM5Z2V4T1G SERIESELECTRICAL CHARACTERISTICS (T A =25︒C unless otherwise noted,V F =0.9V Max.@I F =10mA for all types)Zener Voltage (Note 1)Zener Impedance Leakage CurrentQ V Z C ZZT(mV/k)@V =0V(Volts)@I@I ZT Z@II @VRZZKR@IZTf =1MHzDevice ZTZKRDevice Marking Min Nom Max mA W W mA m A Volts Min Max pF MM5Z2V4T1G 00 2.2 2.4 2.651001000 1.050 1.0−3.50450MM5Z2V7T1G 01 2.5 2.7 2.951001000 1.020 1.0−3.50450MM5Z3V0T1G 02 2.8 3.0 3.251001000 1.010 1.0−3.50450MM5Z3V3T1G 05 3.1 3.3 3.55951000 1.05 1.0−3.50450MM5Z3V6T1G 06 3.4 3.6 3.85901000 1.05 1.0−3.50450MM5Z3V9T1G 07 3.7 3.9 4.15901000 1.03 1.0−3.5−2.5450MM5Z4V3T1G 08 4.0 4.3 4.65901000 1.03 1.0−3.50450MM5Z4V7T1G 09 4.4 4.7 5.0580800 1.03 2.0−3.50.2260MM5Z5V1T1G 0A 4.8 5.1 5.4560500 1.02 2.0−2.7 1.2225MM5Z5V6T1G 0C 5.2 5.6 6.0540400 1.01 2.0−2.0 2.5200MM5Z6V2T1G 0E 5.8 6.2 6.6510100 1.03 4.00.4 3.7185MM5Z6V8T1G 0F 6.4 6.87.2515160 1.02 4.0 1.2 4.5155MM5Z7V5T1G 0G 7.07.57.9515160 1.01 5.0 2.5 5.3140MM5Z8V2T1G 0H 7.78.28.7515160 1.00.7 5.0 3.2 6.2135MM5Z9V1T1G 0K 8.59.19.6515160 1.00.27.0 3.87.0130MM5Z10VT1G 0L 9.41010.6520160 1.00.18.0 4.58.0130MM5Z11VT1G 0M 10.41111.6520160 1.00.18.0 5.49.0130MM5Z12VT1G 0N 11.41212.752580 1.00.18.0 6.010130MM5Z13VT1G 0P 12.413.2514.153080 1.00.18.07.011120MM5Z15VT1G 0T 14.31515.8530200 1.00.0510.59.213110MM5Z16VT1G 0U 15.316.217.1240200 1.00.0511.210.414105MM5Z18VT1G 0W 16.81819.1245225 1.00.0512.612.416100MM5Z20VT1G 0Z 18.82021.2255225 1.00.0514.014.41885MM5Z22VT1G 1020.82223.3255250 1.00.0515.416.42085MM5Z24VT1G 1122.824.225.6270120 1.00.0516.818.42280MM5Z27VT1G 1225.12728.9280300 1.00.0518.921.425.370MM5Z30VT1G 14283032280300 1.00.0521.024.429.470MM5Z33VT1G 18313335280300 1.00.0523.227.433.470MM5Z36VT1G 19343638290500 1.00.0525.230.437.470MM5Z39VT1G 203739412130500 1.00.0527.333.441.245MM5Z43VT1G 214043461150500 1.00.0530.137.646.640MM5Z47VT1G 1A 4447501170500 1.00.0532.942.051.840MM5Z51VT1G 1C 4851541180500 1.00.0535.746.657.240MM5Z56VT1G 1D 5256601200500 1.00.0539.252.263.840MM5Z62VT1G 1E 5862661215500 1.00.0543.458.871.635MM5Z68VT1G 1F 6468721240500 1.00.0547.665.679.835MM5Z75VT1G1G70757912555001.00.0552.573.488.6351.Zener voltage is measured with a pulse test current I Z at an ambient temperature of 25︒C.MM5Z2V4T1G SERIESSC-79/SOD-523DIMENSIONS (mm are the original dimensions)UNIT A b p c D E H E V m m0.70.350.2 1.30.9 1.70.150.50.250.11.10.71.5Note1.The marking bar indicates the cathode.OUTLINE REFERENCES EUROPEAN ISSUE DATEVERSION IECJEDECEIAJ PROJECTIONSOD523SC-7998-11-25。

DCY品牌

DCY是深圳市登辰易科技有限公司的简称，创立于2001年，是台北高新区的一家高新技术企业指定设立的唯一一处大陆涉外销售分支机构。

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MM1Z3V3稳压管系列原厂DCY推荐

MM1Z2V4T1G Series
1
2
SOD-123
Equivalent Circuit Diagram
1 2
Cathode
Anode
Maximum Ratings and Electrical Characteristics
Characteristics
Total Power Dissipation on FR-5 Board (1) Thermal Resistance Junction to Ambient Air Forward Voltage @ IF=10mA Junction and Storage Temperature Range NOTES:
Rev.O 2/3
MM1Z2V4T1G Series
SOD−123
D
A A1
HE
ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ
1 2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b c D E HE L MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 −−− −−− 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 −−− −−− 0.25 MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−−

DM2310(AO2310)场效应MOS管原厂DCY品牌推荐

BVDSS VGS IDR IDRM
■THERMAL CHARACTERISTICS 熱特性
Characteristic 特性
Total Device Dissipation 總耗散功率
TA=25℃環境溫度爲 25℃
Derate above25℃ 超過 25℃遞減
Thermal Resistance Junction to Ambient 熱阻
RDS(ON)
—
Input Capacitance 輸入電容 (VGS=0V, VDS=25V,f=1MHz)
CISS
—
Common Source Output Capacitance 共源輸出電容(VGS=0V, VDS=25V,f=1MHz)
COSS
—
Turn-ON Time 开启時間 (VDS=30V, ID=200mA, RGEN=25Ω)
sot23場效應晶體管sot23fieldeffecttransistorsnnnnchannelchannelchannelchannelenhancementmodeenhancementmodeenhancementmodeenhancementmodemosmosmosmosfetsfetsfetsfetsnnnnmosmosmosmosmaximummaximummaximummaximumratingsratingsratingsratingscharacteristic特性參數symbolmax最大值unitbvdss60vgs20draincurrentcontinuousdraincurrentpulsed漏極電流脉冲idrmthermalthermalthermalthermalcharacteristicscharacteristicscharacteristicscharacteristicscharacteristic特性symbolmax最大值unittotaldevicedissipation總耗散功率25環境溫度爲25derateabove25100038mwmwthermalresistancejunctiontoambientja150tjtstg15055to150wwwdcychinanetdm2310dm2310ao2310dm2310ao2310dm2310e2devicedevicedevicedevicemarkingmarkingmarkingmarkingelectricalelectricalelectricalelectricalcharacteristicscharacteristicscharacteristicscharacteristicsta25unlessotherwisenoted如無特殊說明溫度爲25characteristic特性參數symbolmin最小值typ典型值max最大值unit250uavgs0vbvdss60250uavgsvdsgsth08diodeforwardvoltagedrop内附二極管正向壓降isd1avgs0vgs0vuagatebodyleakagegs20vds0v100nastaticdrainsourceonstateresistance静态漏源導通電阻id3avgs10vid3avgs45v809010

B2100A肖特基二极管原厂DCY品牌推荐

DCY CatalogSURFACE MOUNT SCHOTTKY BARRIER RECTIFIERMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSNote:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areasRatings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.VOLTS VOLTS VOLTS SYMBOLS UNITS AmpsAmps Volts V RRM V RMS V DC I (AV)I FSM V F 2.050.00.70Operating junction temperature range Maximum repetitive peak reverse voltage Maximum RMS voltageMaximum DC blocking voltageMaximum average forward rectified current at T L (see fig.1)Peak forward surge current8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =100 C Typical junction capacitance (NOTE 1)I R 0.5R θJA C J T J ,T STG75.0180pF C mA Typical thermal resistance (NOTE 2)C/W Storage temperature rangeC-50 to +150-50 to +125-50 to +15010.05.00.550.85B220A B230A B250A B240A B260A B2100A B280A 20142030213040284050355060426080568010070100220Number2.01.61.20.80.40.01 0.1 1 10 1001001010.1REVERSE VOLTAGE,VOLTSt,PULSE DURATION,sec.FIG. 5-TYPICAL JUNCTION CAPACITANCE FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCENUMBER OF CYCLES AT 60 HzFIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARDFIG. 1- FORWARD CURRENT DERATING CURVEA V E R A G E F O R W A R D R E C T I F I E D C U R R E N T ,A M P E R E SJ U N C T I O N C A P A C I T A N C E , p FP E A K F O R W A R D S U R G E C U R R E N T ,A M P E R E S1001010.10.010.001PERCENT OF PEAK REVERSE VOLTAGE,%FIG. 4-TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S R E V E R S E C U R R E N T ,M I L L I A M P E R E ST R A N S I E N T T H E R M A L I M P E D A N C E ,C /WAMBIENT TEMPERATURE, C 5010.010.10.01FIG. 3-TYPICAL INSTANTANEOUS FORWARDI N S T A N T A N E O U S F O R W A R DC U R R E N T ,A M P E R E SINSTANTANEOUS FORWARD VOLTAGE,VOLTSRATINGS AND CHARACTERISTIC CURVES B220A THRU B2100AThe cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!。

BZT52B系列高精度SOD-323稳压管厂家DCY品牌推荐

600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.5 0.5
Maximum Ratings(Ta=25℃ unless otherwise specified)
Characteristic Forward Voltage (Note 2) Power Dissipation(Note 1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range @ IF = 10mA Symbol VF Pd RθJA Tj Tstg Value 0.9 200 625 150 -55 ~ +150 Unit V mW Я／W Я Я
1000 250
Power Derating Curve
Ta=25℃ f=1kHz
100
(mW) PD POWER DISSIPATION
22
IZ(AC)=0.1IZ(DC) ZZT, DYNAMIC IMPEDANCE(Ω)
200
150
100
10
IZ=5mA
50
IZ=1mA
1 4 6 8 10 12 14 16 18 20 0 0 25 50 75 100 125 150

SS33肖特基二极管原厂DCY品牌推荐

SS32 ...... SS310表面安装肖特基二极管反向电压 20 ---100 V正向电流 3.0 A极限值和温度特性 TA = 25℃ 除非另有规定。

Maximum Ratings & Thermal CharacteristicsRatings at 25℃ ambient temperature unless otherwise specified.Surface Mount Schottky Barrier RectifierReverse Voltage 20 to 100 VForward Current 3.0 A·正向压降低。

Low Forward Voltage Drop·大电流承受能力。

High Current Capability ·高温焊接保证 High temperature soldering guaranteed:250℃/10 秒, 0.375" (9.5mm)引线长度。

250℃/10 seconds, 0.375" (9.5mm) lead length,·引线可承受5 磅 (2.3kg) 拉力。

5 lbs. (2.3kg) tension机械数据 Mechanical Data·端子: 镀锡轴向引线 Terminals: Plated axial leads·极性: 色环端为负极 Polarity: Color band denotes cathode end ·安装位置: 任意 Mounting Position: Any特征 FeaturesSS32 3.01000.57520140.550.8560V V ℃AV A mA ℃//W pF 单位UnitV V R(RMS)最大正向平均整流电流最大峰值反向电压最大反向有效值电压-50 --- +150V RRM I FM 最大正向电压降 @IF =3.0AV F 正向峰值浪涌电流 8.3mS单一正弦半波I FSM 最大反向漏电流IR 典型热阻工作温度和存储温度R θJA Tj, T STG典型结电容 VR = 4.0V f = 1.0MHzCj @TA = 25℃Maximum repetitive peak reverse voltageMaximum RMS voltage最大直流阻断电压Maximum DC blocking voltageMaximum average forward rectified currentMaximum forward voltagePeak forward surge current 8.3 ms single half sine-waveMaximum reverse currentTypical thermal resistanceOperating junction and storage temperature rangeType junction capacitance符号SymbolsV DC 20SS33SS34SS35SS36SS38SS310302130402840503550604260805680100701000.7正向电流 I F (A )正向特性曲线（典型值）正向电压 V F (V)环境温度 Ta(°C )通过电流的周期峰值正向浪涌电流 I F S M (A )平均正向电流 I F (A V ) (A )浪涌特性曲线（最大值）TYPICAL FORWARD CHARACTERISTICFORWARD CURRENT DERATING CURVEI F I n s t a n t a n e o u s F o r w a r d C u r r e n t (A )V F Instantaneous Forward Voltage (V)Tamb, ambient temperature (°C)I F (A ) A v e r a g e F o r w a r d R e c t i f i e d C u r r e n t (A )MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENTNumber of Cycles at 60 Hz.I F S M P e a k F o r w a r d S u r g e C u r r e n t (A )正向电流降额曲线0.010.1110500.6 1.2 1.602550751001251501753.02.52.01.51.00.501246102040100806040200100峰值反向电压百分比(%)TYPICAL REVERSE CHARACTERISTICSPercent Of Peak Reverse Voltage,%I R I n s t a n t a n e o u s R e v e r s e C u r r e n t (µA )反向特性曲线(典型值)反向电流 I R (μA )0.0010.010.11080140T J =125°CT J =25°C2040601001201.00.20.8 1.40.4SS32 ...... SS310特性曲线 Characteristic CurvesT J =75°C120SS32-SS34SS35-SS36SS38-SS310。

AO4409(MOS场效应管)原厂DCY品牌推荐

2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Page 2 of 5
AO4409

945
pF
745
pF
2
3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
100 120 nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-15A
51.5
nC
14.5
On state drain current
VGS=-10V, VDS=-5V
-80
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-15A
TJ=125°C
6.2 7.5 mΩ
8.2 11.5
VGS=-4.5V, ID=-10A
9.5 12 mΩ
RθJA
31 59
Maximum Junction-to-Lead
Steady-State
RθJL
16
Max 40 75 24
Units V V
A
A mJ W °C
Units °C/W °C/W °C/W
Page 1 of 5
AO4409

Electrical Characteristics (TJ=25°C unless otherwise noted)

MM1Z33稳压管系列原厂DCY推荐

mV/ C Min -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -2.7 -2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 21.4 24.4 27.4 30.4 33.4 10.0 10.0 10.0 Max 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 25.3 29.4 33.4 37.4 41.2 12.0 12.0 12.0
O
-
-
75
100
125
150
Rev.O 1/3
MM1Z2V4T1G Series
Electrical Characteristics ( TA =25 C unless otherwise noted, VF =0.9V Max@ IF =10mA)
Zener Voltage R ange
(1)
Maximum Zener Impedance(3) ZZT @ I ZT 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 100 100 100
Tes t C urrent I ZT C mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 5 5 5
uA 50 20 10 5.0 5.0 3.0 3.0 பைடு நூலகம்.0 2.0 1.0 3.0 2.0 1.0 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1

MMBT2222A原厂DCY品牌推荐

=1B;DM DMDM DMBT2222(销售型號MMBT2222)BT2222A(销售型號MMBT2222A)■FEATURES 特點NPN Switching Transistor ■MAX MAXIMUM IMUM RATINGS 最大額定值Characteristic特性參數Symbol 符號GMBT2222GMBT2222AUnit 單位Collector-Emitter Voltage 集電極-發射極電壓V CEO 3040Vdc Collector-Base Voltage 集電極-基極電壓V CBO 6075Vdc Emitter-Base Voltage 發射極-基極電壓V EBO 5.0 6.0Vdc Collector Current-Continuous 集電極電流-連續Ic600600mAdc■THERMAL CHARACTERISTICS 熱特性Characteristic 特性參數Symbol 符號Max 最大值Unit 單位Total Device Dissipation 總耗散功率FR-5Board(1)T A =25℃溫度爲25℃Derate above25℃超過25℃遞減P D2251.8mW mW/℃Total Device Dissipation 總耗散功率Alumina Substrate 氧化鋁襯底,(2)T A =25℃Derate above25℃超過25℃遞減P D 3002.4mW mW/℃Thermal Resistance Junction to Ambient 熱阻R ΘJA 417℃/W Solder Temperature/Solder Time 焊接溫度/焊接時間T/t 260/10℃/SJunction &Storage Temperature 結溫和儲存溫度T J ,T stg-55to+150℃■DEVICEMARKING 打標BT22222222(销售型號MMBT2222)BT 2222A A (销售型號MMBT2222A)=1PDMDM DM DM DM DM DM DM DM DM DM DM DM DM DM DMBT2222(销售型號MMBT2222)BT2222A(销售型號MMBT2222A)■ELECTRICAL CHARACTERISTICS 電特性(T A =25℃unless otherwise noted 如無特殊說明，溫度爲25℃)Characteristic 特性參數Symbol 符號Min 最小值Max 最大值Unit 單位Collector-Emitter Breakdown Vo ltage(3)集電極-發射極擊穿電壓(Ic=10mAdc,I B =0)V (BR)CEO BT2222BT2222A 3040——VdcCollector-Base Breakdown V oltage 集電極-基極擊穿電壓(Ic=10μAdc,I E =0)V (BR)CBO 6075—__VdcEmitter-Base Breakdown V oltage發射極-基極擊穿電壓(I E =10μAdc,Ic=0)V (BR)EBO 5.06.0—VdcCollector Cutoff Current 集電極截止電流(V CE =60Vdc,V EB (Off)=3.0Vdc)I CEX BT2222A—10nAdc Collector Cutoff Current 集電極截止電流(V CB =50Vdc,I E =0)(V CB =60Vdc,I E =0)(V CB =50Vdc,I E =0,T A =125℃)(V CB =60Vdc,I E =0,T A =125℃)I CBO BT2222BT2222A BT2222BT2222A ————0.010.0110.010.0μAdc Emitter Cutoff Current 發射極截止電流(V EB =3.0Vdc,I C =0)I EBO BT2222A —100nAdc Base Cutoff Current 基極截止電流(V CE =60Vdc,V EB (Off)=3.0Vdc)I BL BT2222A —20nAdc DC Current Gain 直流電流增益H FE —(I c =0.1mAdc,V CE =10.0Vdc)35—(I c =1.0mAdc,V CE =10.0Vdc)50—(I c =10mAdc,V CE =10.0Vdc)75—(I c =10mAdc,V CE =10.0Vdc,T A =-55℃)BT2222A 35—(I c =150mAdc,V CE =10.0Vdc)(3)100300(I c =150mAdc,V CE =1.0Vdc)(3)50—(I c =500mAdc,V CE =10.0Vdc)(3)BT2222BT2222A3040——Collector-Emitter Saturation Voltage 集電極發射極飽和壓降(I c =150mAdc,I B =15mAdc)(I c =500mAdc,I B =50mAdc)V CE(sat)BT2222BT2222A ————0.40.31.61.0VdcBase-Emitter Saturation V oltage 基極發射極飽和壓降(I c =150mAdc,I B =15mAdc)(I c =500mAdc,I B =50mAdc)V BE(sat)—0.6—— 1.31.22.62.0Vdc DM DMBT2222BT2222ADM DMBT2222BT2222A DM DMBT2222BT2222A DM DMBT2222BT2222ADM DMBT2222BT2222ADM DM DM DM DM DM DM DM f 22222222ADM DM DM DM DM DM ■SMALL-SIGNAL CHARACTERISTICS 小信號特性Characteristic 特性參數Symbol 符號Min 最小值Max 最大值Unit 單位Current-Gain-Bandwidth Product 電流增益-帶寬乘積(I c =20mAdc,V CE =20Vdc,f=100MHz)TBT BT 250300——MHz Output Capacitance 輸出電容(V CB =10.0Vdc,I E =0,f=1.0MHz)C obo—80pF Intput Capacitance 輸入電容(V EB =0.5Vdc,I C =0,f=1.0MHz)C ibo BT2222BT2222A——3025pFIntput Impedance 輸入阻抗(I c =1.0mAdc,V CE =10Vdc,f=1.0kHz)(I c =10mAdc,V CE =10Vdc,f=1.0kHz)hieBT2222A BT2222A2.00.258.01.25kQVoltageFeedbackRadio 電壓反饋係數(I c =1.0mAdc,V CE =10Vdc,f=1.0kHz)(I c =10mAdc,V CE =10Vdc,f=1.0kHz)hreBT2222A BT2222A——8.04.0-4×10Small-Signal Current Gain 小信號電流增益(I c =1.0mAdc,V CE =10Vdc,f=1.0kHz)(I c =10mAdc,V CE =10Vdc,f=1.0kHz)hfeBT2222A BT2222A5075300375—Output Admittance 輸出導納(I c =1.0mAdc,V CE =10Vdc,f=1.0kHz)(I c =10mAdc,V CE =10Vdc,f=1.0kHz)hoeBT2222A BT2222A5.02535200μmhos Collector-Base Time Constant 集電極基極時間(I E =20mAdc,V CB =20Vdc,f=31.8MHz)rb,CcBT2222A—150ps Noise Figure 雜訊係數(I c =100u Adc,V CE =10Vdc,Rs=1.0kQ,f=1.0kHz)NFBT2222A—4.0dB■SWITCHING CHARACTERISTICS 開關特性Characteristic 特性參數Symbol 符號Min 最小值Max 最大值Unit 單位Delay Time 延遲時間(Vcc=30Vdc,V BE(off)=-0.5Vdc Ic=150mAdc,I B1=15mAdc)t d —10ns Rise Time 上升時間t r —25Storage Time 儲存時間(Vcc=30Vdc,Ic=150mAdc,I B1=I B2=15mAdc)t s —225nsFall Time 下降時間t f—601.FR-5=1.0×0.75×0.062in.2.Alumina=0.4×0.3×0.024in.99.5%alumina.3.Pulse Width<300us;Duty Cycle<2.0%.4.f T is defined as the frequency at which (h fe )extrapolates to unity.DM DMBT2222(號MMBT2222)BT2222A 销售型號MMBT2222A)销售型销售型销售型■DIMENSION 外形封裝尺寸單位(UNIT)：mmDM DMBT2222(號MMBT2222)BT2222A 號MMBT2222A)。