光刻设备及工艺
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PHOTOLITHOGRAPHY 光刻设备及工艺
讲座提要源自文库
1. 2. 3. 4. 5. 6. General Facility (动力环境) (动力环境) Mask (掩膜版) (掩膜版) Process step highlight (光刻工艺概述) (光刻工艺概述) BCD 正胶工艺 History and 未来的光刻工艺
Resist dispense methods
Static Dynamic Radial Reverse radial
Resist pump
(Volume control --- 2cc/wafer and dripping)
Barrel pump ---Tritek ---Tritek Diaphragm pump --- Millipore N2 pressure control pump --- IDL Step motor control pump --- Cybot size of dispense head
4.2.4
Coater (涂胶机） (涂胶机）
rpm (转速） and acceleration （加速）
Maximum speed --- Up to 10000 rpm Stability --- day to day Acceleration --- controllable number of steps Reliability --- time to replacement
EBR (Edge bead removal)（清边） removal)（清边）
Method --- Top EBR or Bottom EBR or Top and bottom EBR Problem --- Dripping Chemical ---- Acetone, EGMEA, PGMEA, ETHLYETHLY-LACTATE
4.3.3
Exposure (曝光) (曝光)
Contact print (接触） (接触）
1. Most of use for negative resist process --- for 5u process and can be push to 3u. 2. Positive resist can print smaller than 3u, and deepUV can push to 1u, but very high defect 3. Equipment: --- Canon PLA 501 --- Cobilt --- Kasper --- K&S
Etch (腐蚀) ----Transfer a permanent pattern 腐蚀) ----Transfer (Oxide, Nitride, Metal…) Metal…
2.0 Facility requirement
Temperature (温度) 70 oF (温度) Humidity (湿度) (湿度) 45% Positive pressure (正压) (正压) >0.02in/H2O Particle control (微粒) Class 100 (微粒) Vibration (震动) (震动) Yellow light environment (黄光区) (黄光区) DI water (去离子水) 17mhom (去离子水) Compress air and Nitrogen (加压空气,氮 (加压空气, 气) In house vacuum(真空管道) vacuum(真空管道)
4.2.2 Coater (涂胶机）combination (涂胶机）combination
SVG 8800
升降机
涂胶
热板
升降机
升降机
涂胶
热板
热板
升降机
升降机
HMDS
冷板
涂胶
热板
冷板
升降机
升降机
HMDS
冷板
涂胶
热板
热板
冷板
升降机
升降机
热板
冷板
显影
热板
热板
冷板
升降机
4.2.3 Coater (涂胶机） (涂胶机）
Resist Type
Negative resist Positive resist G-line i –line reverse image TAC --- top anti-reflective coating antiBARLI --- bottom anti-reflective coating antiChemical amplification resist X ray resist
4.2.1
Coater (涂胶机） (涂胶机）
Equipment module and special feature
PrePre-bake and HMDS --- Hot/Cold plate Resist dispense --- Resist pump RPM accuracy --- Motor EBR --- Top/bottom Hot plate --- soft bake temperature accuracy Exhaust Waste collection Temperature/Humidity control hood Transfer system --- Particle and reliability Process step and process program --- Flexible
Equipment/mask/resist selection 1. Resolution 分辨率--- Expose character, Light source 分辨率--(wavelength), N/A, 2. Auto-alignment skill 自动校准技术--- Light field, dark field, Auto自动校准技术--laser 3. Mask掩膜版--- e-beam master, sub-master, spot size, Mask掩膜版--subquartz plate, defect density, CD requirement 4. Resist selection 胶选择
1.
General
MASKING Process (光刻工艺) (光刻工艺)
Photolithography (光学光刻) ----Transfer a 光学光刻) ----Transfer temporary pattern (resist)
Defect control Critical dimension control Alignment accuracy Cross section profile
Contact print ---Canon 501 ---Canon
4.3.4
Exposure (曝光) (曝光)
Scanner (扫描） (扫描）
1. Most of use for G –line Positive resist process --- for 3u process and can be push to 2u. 2. Negative resist can print smaller than 4u 3. Equipment: --- Canon MPA 500, 600 --- Perkin Elmer 100, 200, 300, 600, 700, 900
3. Exposure 4. Develop
(曝光) 曝光)
Alignment (校正) (校正)
(显影) 显影) (显检) 显检)
Post e-bake, Hard bake, backside rinse e-
5. Develop inspection
4.1 Prebake and HMDS treatment
4.2 Resist Coating (涂胶) (涂胶)
Resist coating specification (指标） 指标）
Thickness（厚度） Thickness（厚度）0.7u – 2.0u (3.0以上for Pad layer) 以上for Uniformity（均匀度） 50A Uniformity（均匀度）+ 50A – +200A 200A Size of EBR （去胶边尺寸） 去胶边尺寸） Particle（颗粒） Particle（颗粒）<20 per wafer Backside contamination(背后污染） contamination(背后污染） 三个主要因数影响涂胶的结果 1. Resist Product (产品） (产品） Viscosity （粘度） 2. Spinner Dispense method （涂胶方法） Spinner speed (RPM) （转速） Exhaust （排气） Soft bake temperature （烘温） 3. Facility Temperature （室温） Humility （湿度）
4.3.2
Exposure (曝光) (曝光)
Aligner Technology
1. Contact print (接触） (接触） Soft contact, hard contact, proximity 2. Scanner (扫描） (扫描） 3. Stepper (重复） (重复） 1X, 2X , 4X, 5X, 10X 4. Step – Scan (重复扫描) (重复扫描) 4X --- reticle move, wafer move, reticle/wafer move 5. X ray (X光） (X光） 1:1 6. E-beam (电子束）--- Direct write (电子束）---
4.3 .1 Exposure (曝光) (曝光)
Transfer a pattern from the mask (reticle) to resist
Goal
1. 2. 3. 4. 5. Critical Dimension control (CD)条宽 (CD)条宽 Alignment 校准--- Mis-alignment, run in/out 校准--- MisPattern distortion 图样变形--- Astigmatism 图样变形--Cross section profile 侧面形貌--- side wall angle 侧面形貌--Defect free无缺陷 free无缺陷
Purpose of Pre-bake and HMDS treatment is to improve the Preresist adhesion on oxide wafer. HMDS is adhesion promoter especially designed for positive resist. HMDS (Hexamethyldisilane) can be applied on the wafers by 1. Vapor in a bucket 2. vapor in a vacuum box 3. Directly dispense on wafer 4. YES system --- in a hot vacuum system 5. Vapor in a hot plate (with exhaust) Too much HMDS will cause poor spin, vice versa will cause resist lifting
3.0 Mask (掩膜版) (掩膜版)
Design PG tape Mask making
• • • Plate --- quartz, LE glass, Soda line glass Coating --- Chrome, Ion oxide, Emulsion Equipment --- E-beam, Pattern generator
Mask storage ---Anti static Box
Pellicle
Pellicle protection
4.0 光刻工艺概述
1. 2.
Prebake and HMDS Resist coating (涂胶) 涂胶)
EBR (去胶边), soft bake, (去胶边),
(前烘) 前烘)
讲座提要源自文库
1. 2. 3. 4. 5. 6. General Facility (动力环境) (动力环境) Mask (掩膜版) (掩膜版) Process step highlight (光刻工艺概述) (光刻工艺概述) BCD 正胶工艺 History and 未来的光刻工艺
Resist dispense methods
Static Dynamic Radial Reverse radial
Resist pump
(Volume control --- 2cc/wafer and dripping)
Barrel pump ---Tritek ---Tritek Diaphragm pump --- Millipore N2 pressure control pump --- IDL Step motor control pump --- Cybot size of dispense head
4.2.4
Coater (涂胶机） (涂胶机）
rpm (转速） and acceleration （加速）
Maximum speed --- Up to 10000 rpm Stability --- day to day Acceleration --- controllable number of steps Reliability --- time to replacement
EBR (Edge bead removal)（清边） removal)（清边）
Method --- Top EBR or Bottom EBR or Top and bottom EBR Problem --- Dripping Chemical ---- Acetone, EGMEA, PGMEA, ETHLYETHLY-LACTATE
4.3.3
Exposure (曝光) (曝光)
Contact print (接触） (接触）
1. Most of use for negative resist process --- for 5u process and can be push to 3u. 2. Positive resist can print smaller than 3u, and deepUV can push to 1u, but very high defect 3. Equipment: --- Canon PLA 501 --- Cobilt --- Kasper --- K&S
Etch (腐蚀) ----Transfer a permanent pattern 腐蚀) ----Transfer (Oxide, Nitride, Metal…) Metal…
2.0 Facility requirement
Temperature (温度) 70 oF (温度) Humidity (湿度) (湿度) 45% Positive pressure (正压) (正压) >0.02in/H2O Particle control (微粒) Class 100 (微粒) Vibration (震动) (震动) Yellow light environment (黄光区) (黄光区) DI water (去离子水) 17mhom (去离子水) Compress air and Nitrogen (加压空气,氮 (加压空气, 气) In house vacuum(真空管道) vacuum(真空管道)
4.2.2 Coater (涂胶机）combination (涂胶机）combination
SVG 8800
升降机
涂胶
热板
升降机
升降机
涂胶
热板
热板
升降机
升降机
HMDS
冷板
涂胶
热板
冷板
升降机
升降机
HMDS
冷板
涂胶
热板
热板
冷板
升降机
升降机
热板
冷板
显影
热板
热板
冷板
升降机
4.2.3 Coater (涂胶机） (涂胶机）
Resist Type
Negative resist Positive resist G-line i –line reverse image TAC --- top anti-reflective coating antiBARLI --- bottom anti-reflective coating antiChemical amplification resist X ray resist
4.2.1
Coater (涂胶机） (涂胶机）
Equipment module and special feature
PrePre-bake and HMDS --- Hot/Cold plate Resist dispense --- Resist pump RPM accuracy --- Motor EBR --- Top/bottom Hot plate --- soft bake temperature accuracy Exhaust Waste collection Temperature/Humidity control hood Transfer system --- Particle and reliability Process step and process program --- Flexible
Equipment/mask/resist selection 1. Resolution 分辨率--- Expose character, Light source 分辨率--(wavelength), N/A, 2. Auto-alignment skill 自动校准技术--- Light field, dark field, Auto自动校准技术--laser 3. Mask掩膜版--- e-beam master, sub-master, spot size, Mask掩膜版--subquartz plate, defect density, CD requirement 4. Resist selection 胶选择
1.
General
MASKING Process (光刻工艺) (光刻工艺)
Photolithography (光学光刻) ----Transfer a 光学光刻) ----Transfer temporary pattern (resist)
Defect control Critical dimension control Alignment accuracy Cross section profile
Contact print ---Canon 501 ---Canon
4.3.4
Exposure (曝光) (曝光)
Scanner (扫描） (扫描）
1. Most of use for G –line Positive resist process --- for 3u process and can be push to 2u. 2. Negative resist can print smaller than 4u 3. Equipment: --- Canon MPA 500, 600 --- Perkin Elmer 100, 200, 300, 600, 700, 900
3. Exposure 4. Develop
(曝光) 曝光)
Alignment (校正) (校正)
(显影) 显影) (显检) 显检)
Post e-bake, Hard bake, backside rinse e-
5. Develop inspection
4.1 Prebake and HMDS treatment
4.2 Resist Coating (涂胶) (涂胶)
Resist coating specification (指标） 指标）
Thickness（厚度） Thickness（厚度）0.7u – 2.0u (3.0以上for Pad layer) 以上for Uniformity（均匀度） 50A Uniformity（均匀度）+ 50A – +200A 200A Size of EBR （去胶边尺寸） 去胶边尺寸） Particle（颗粒） Particle（颗粒）<20 per wafer Backside contamination(背后污染） contamination(背后污染） 三个主要因数影响涂胶的结果 1. Resist Product (产品） (产品） Viscosity （粘度） 2. Spinner Dispense method （涂胶方法） Spinner speed (RPM) （转速） Exhaust （排气） Soft bake temperature （烘温） 3. Facility Temperature （室温） Humility （湿度）
4.3.2
Exposure (曝光) (曝光)
Aligner Technology
1. Contact print (接触） (接触） Soft contact, hard contact, proximity 2. Scanner (扫描） (扫描） 3. Stepper (重复） (重复） 1X, 2X , 4X, 5X, 10X 4. Step – Scan (重复扫描) (重复扫描) 4X --- reticle move, wafer move, reticle/wafer move 5. X ray (X光） (X光） 1:1 6. E-beam (电子束）--- Direct write (电子束）---
4.3 .1 Exposure (曝光) (曝光)
Transfer a pattern from the mask (reticle) to resist
Goal
1. 2. 3. 4. 5. Critical Dimension control (CD)条宽 (CD)条宽 Alignment 校准--- Mis-alignment, run in/out 校准--- MisPattern distortion 图样变形--- Astigmatism 图样变形--Cross section profile 侧面形貌--- side wall angle 侧面形貌--Defect free无缺陷 free无缺陷
Purpose of Pre-bake and HMDS treatment is to improve the Preresist adhesion on oxide wafer. HMDS is adhesion promoter especially designed for positive resist. HMDS (Hexamethyldisilane) can be applied on the wafers by 1. Vapor in a bucket 2. vapor in a vacuum box 3. Directly dispense on wafer 4. YES system --- in a hot vacuum system 5. Vapor in a hot plate (with exhaust) Too much HMDS will cause poor spin, vice versa will cause resist lifting
3.0 Mask (掩膜版) (掩膜版)
Design PG tape Mask making
• • • Plate --- quartz, LE glass, Soda line glass Coating --- Chrome, Ion oxide, Emulsion Equipment --- E-beam, Pattern generator
Mask storage ---Anti static Box
Pellicle
Pellicle protection
4.0 光刻工艺概述
1. 2.
Prebake and HMDS Resist coating (涂胶) 涂胶)
EBR (去胶边), soft bake, (去胶边),
(前烘) 前烘)