PT550光敏三极管数据
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1.9
1.7
(PT550 )
T a = 25˚C
1.5
1.3
1.1
0.9
0.7
0.5 10-2 2
5 10-1 2
5 100 2
Irradiance E e ( mW/cm2)
5 101
q Please refer to the chapter “ Precautions for Use.”
PT550/PT550F
20
Ta = 25˚C
10
Ee = 1.0mW/cm2
5
0.5mW/cm2
Collector current I C ( mA )
2
0.2mW/cm2
1 0.1mW/cm2
0.5
0.2
0.1
0.05 0
5
10
15
Collector-emitter voltage V CE (V)
Fig. 7 Response Time vs. Load Resistance
Test Circuit for Response Time
Output Input
VCC
RL
90 %
Output
10 %
tr
tf
Fig.8-b Sensitivity Diagram (PT550F) (Ta = 25˚C)
- 20˚ - 10˚ 0˚ + 10˚ + 20˚
100
- 30˚
+ 30˚ 80
TYP.
MAX.
Unit
20
PT550 142 PT550F 150
mA
10- 7
10 -6
A
-
1.0
V
800
-
nm
350
-
µs
300
-
µs
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
PT550/PT550F
Collector dark current I CEO (A)
Fig. 2 Collector Dark Current vs. Ambient Temperature
10 - 4 5 VCE = 10V
10 - 5 5
10 - 6 5
10 - 7 5
10 - 8 5
10 - 9 5
Fig. 1 Collector Power Dissipation vs. Ambient Temperature
175
Collector power dissipation PC ( mW )
150
125
100
75
50
25
0 - 25 0
25 50 75 100 125
Ambient temperature T a (˚C)
PT550F
3.6 ± 0.1
6.8MAX. 4.5
20
20 ± 1
φ 0.45
φ 0.45
1
2.5
2.5
s Applications 1. Optoelectronic switches, optoelectronic
counters 2. Smoke detectors 3. Infrared applied systems
Symbol
Rating
Unit
V CEO
35
V
V ECO
6
V
V CBO
35
V
IC
1Hale Waihona Puke Baidu0
mA
PC
150
mW
T opr
- 25 to + 125
˚C
T stg
- 55 to + 150
˚C
T sol
260
˚C
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
Fig.4-b Collector Current vs. Irradiance (PT550F )
5 VCE = 5V T a = 25˚C
2
101
5
Collector current I C ( mA )
2 100
5
2
10-1 5
10 -1 2
5 10-0 2
Irradiance E e ( mW/cm2)
查询PT550供应商
PT550/PT550F
PT550/PT550F
TO-18 Type Phototransistor with Base Terminal
s Features 1. High sensitivity
( PT550 IC : MIN.3mA at E e = 0.1mW/cm2 PT550F IC : MIN.3mA at E e = 1mW/cm 2 2. Narrow acceptance : PT550
(∆ θ : TYP. ± 6˚ ) Wide acceptance : PT550F
(∆ θ : TYP. ± 50˚ ) 3. TO - 18 type standard package
(
s Outline Dimensions
φ 4.7± 0.1
PT550
( Unit : mm)
φ4.7± 0.1 φ 3.0 ± 0.1
2 100
5
2
10 - 1 5
10-2 2
5 10-1 2
Irradiance E e ( mW/cm2)
Fig.5-a Collector Current vs.
Collector-emitter Voltage
(PT550 )
20
T a = 25˚C
10
Ee = 0.1mW/cm2
0.05mW/cm2 5
1.0 3
2 φ 2.5
1.0 3
2 φ 2.5
23
1.0
1
1.0
1
45 ˚
φ 5.7MAX.
45 ˚
φ 5.7 MAX.
1 Collector ( Case ) 2 Base 3 Emitter
s Absolute Maximum Ratings
( Ta = 25˚C)
Parameter Collector-emitter voltage Emitter-collector voltage Collector-base voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature
2000
VCE = 15V IC = 1mA
tr
T a = 25˚C 1000
tf
500
Response time (µ s)
200 100 50
20 0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
Load resistance R L ( k Ω )
Fig.8-a Sensitivity Diagram
Relative sensitivity ( % )
- 40˚
- 50˚ - 60˚ - 70˚ - 80˚ - 90˚
60 40 20
0 Angular displacement θ
+ 40˚
+ 50˚ + 60˚ + 70˚ + 80˚ + 90˚
Collector-emitter saturation voltage V CE(sat) (V)
s Electro-optical Characteristics
Parameter
*2Collector current
Collector dark current
Collecter-emitter saturation voltage
Peak sensitivity wavelength
Response
Fig.9-b Collector-emitter Saturation Voltage vs. Irradiance
1.9
1.7
(PT550F )
T a = 25˚C
1.5
1.3
1.1
0.9
0.7
0.5 10-1 2
5 1 2 5 10 2 Irradiance E e ( mW/cm2)
5 102
Fig. 3 Relative Collector Current vs. Ambient Temperature
350
300
Relative collector current ( % )
250
200
150
100
50
0 - 25 0
25 50 75 100 125
Ambient temperature Ta (˚C)
IC = 1mA 2mA 3mA 5mA
10mA 20mA 30mA 50mA Collector-emitter saturation voltage V CE(sat) (V) IC= 1mA 2mA 3mA 5mA 10mA 20mA 30mA 50mA
Fig.9-a Collector-emitter Saturation Voltage vs. Irradiance
IC = 1mA, I B = 0 Ee = 1mW/cm2
-
tr
VCC = 15V, IC = 1mA, R L = 1kΩ
tf
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp )
MIN.
3 -
( Ta = 25˚C)
10 - 10 5
10 - 11 5 - 25 0 25 50 75 100 Ambient temperature Ta (˚C)
Fig.4-a Collector Current vs. Irradiance (PT550 )
5 VCE = 5V T a = 25˚C
2
101
5
Collector current I C ( mA )
2
0.02mW/cm2
1
0.01mW/cm2
0.5
Collector current I C ( mA )
0.2 0.1 0.05
0
5
10
15
Collector-emitter voltage V CE (V)
Fig.5-b Collector Current vs.
Collector-emitter Voltage (PT550F )
Rise time
time
Fall time
Symbol
Conditions
PT550
PT550F
IC
VCE = 5V
VCE = 5V
Ee = 0.1mW/cm2 Ee = 1mW/cm2
ICEO VCE = 10V, E e = 0, I B = 0
VCE ( sat ) λP
IC = 1mA, I B= 0 Ee = 0.1mW/cm2
+ 40˚
+ 50˚ + 60˚ + 70˚ + 80˚ + 90˚
PT550/PT550F
Fig. 6 Spectral Sensitivity
100
80
T a = 25˚C
Relative sensitivity ( % )
60
40
20
0
400
600
800
1000
1200
Wavelength λ ( nm )
(PT550)
(Ta = 25˚C)
- 20˚ - 10˚ 0˚ + 10˚ + 20˚
100
- 30˚
+ 30˚ 80
Relative sensitivity ( % )
- 40˚
- 50˚ - 60˚ - 70˚ - 80˚ - 90˚
60 40
20
0 Angular displacement θ