MEMORY存储芯片STM32F103RCT6中文规格书

Features
•Core: Arm® 32-bit Cortex®-M3 CPU
–72 MHz maximum frequency, 1.25DMIPS/MHz (Dhrystone 2.1) performance at 0 wait state
memory access
–Single-cycle multiplication and hardware
division
•Memories
–256 to 512 Kbytes of Flash memory
–up to 64 Kbytes of SRAM
–Flexible static memory controller with 4 Chip Select. Supports Compact Flash, SRAM,
PSRAM, NOR and NAND memories
–LCD parallel interface, 8080/6800 modes •Clock, reset and supply management – 2.0 to 3.6V application supply and I/Os
–POR, PDR, and programmable voltage detector (PVD)
–4-to-16 MHz crystal oscillator
–Internal 8 MHz factory-trimmed RC
–Internal 40 kHz RC with calibration
–32 kHz oscillator for RTC with calibration •Low power
–Sleep, Stop and Standby modes
–V BAT supply for RTC and backup registers • 3 × 12-bit, 1 µs A/D converters (up to 21
channels)
–Conversion range: 0 to 3.6 V
–Triple-sample and hold capability
–Temperature sensor
• 2 × 12-bit D/A converters
•DMA: 12-channel DMA controller
–Supported peripherals: timers, ADCs, DAC, SDIO, I2Ss, SPIs, I2Cs and USARTs •Debug mode
–Serial wire debug (SWD) & JTAG interfaces
–Cortex®-M3 Embedded Trace Macrocell™•Up to 112 fast I/O ports
–51/80/112 I/Os, all mappable on 16 external interrupt vectors and almost all 5V-tolerant •Up to 11 timers
–Up to four 16-bit timers, each with up to 4
IC/OC/PWM or pulse counter and quadrature
(incremental) encoder input
– 2 × 16-bit motor control PWM timers with dead-time generation and emergency stop
– 2 × watchdog timers (Independent and Window)–SysTick timer: a 24-bit downcounter
– 2 × 16-bit basic timers to drive the DAC
•Up to 13 communication interfaces
–Up to 2 × I2C interfaces (SMBus/PMBus)
–Up to 5 USARTs (ISO 7816 interface, LIN, IrDA capability, modem control)
–Up to 3 SPIs (18 Mbit/s), 2 with I2S interface multiplexed
–CAN interface (2.0B Active)
–USB 2.0 full speed interface
–SDIO interface
•CRC calculation unit, 96-bit unique ID •ECOPACK® packages
Table 1.Device summary Reference Part number
STM32F103xC
STM32F103RC STM32F103VC
STM32F103ZC
STM32F103xD
STM32F103RD STM32F103VD
STM32F103ZD
STM32F103xE
STM32F103RE STM32F103ZE
STM32F103VE
找Memory、FPGA、二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感器、滤波器，
上深圳市美光存储技术有限公司
July 2018DS5792 Rev 13
STM32F103xC, STM32F103xD, STM32F103xE Electrical characteristics
Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE
DS5792 Rev 13
5.3 Operating conditions
5.3.1
General operating conditions
Table 9. Thermal characteristics
Symbol Ratings
Value Unit T STG Storage temperature range –65 to +150
°C T J
Maximum junction temperature
150
°C
Table 10. General operating conditions
Symbol Parameter
Conditions
Min Max Unit
f HCLK Internal AHB clock frequency -0 72MHz f PCLK1Internal APB1 clock frequency -0 36f PCLK2Internal APB2 clock frequency -0 72V DD
Standard operating voltage -2 3.6V V DDA (1)
1.When the ADC is used, refer to Table 59: ADC characteristics .
Analog operating voltage
(ADC not used)
Must be the same potential as V DD (2)
2.It is recommended to power V DD and V DDA from the same source. A maximum difference of 300mV
between V DD and V DDA can be tolerated during power-up and operation.2 3.6
V
Analog operating voltage (ADC used)
2.4
3.6V BAT
Backup operating voltage
- 1.8 3.6V P D
Power dissipation at T A = 85°C for suffix 6 or T A = 105°C for suffix 7(3)
3.If T A is lower, higher P D values are allowed as long as T J does not exceed T J max (see Table 6.7: Thermal
characteristics on page 132).LQFP144-666mW LQFP100
-434LQFP64-444LFBGA100-500LFBGA144-500WLCSP64
-400T A
Ambient temperature for 6 suffix version
Maximum power dissipation -40
85°C Low-power dissipation (4)4.In low-power dissipation state, T A can be extended to this range as long as T J does not exceed T J max (see
Table 6.7: Thermal characteristics on page 132).
-40105Ambient temperature for 7 suffix version
Maximum power dissipation -40105°C
Low-power dissipation (4)-40125T J
Junction temperature range
6 suffix version -40105°C
7 suffix version
-40
125
STM32F103xC, STM32F103xD, STM32F103xE Electrical characteristics
5.3.2 Operating conditions at power-up / power-down
The parameters given in Table 11 are derived from tests performed under the ambient
temperature condition summarized in Table 10.
Table 11. Operating conditions at power-up / power-down
Symbol Parameter
Conditions
Min Max Unit t VDD
V DD rise time rate -0∞µs/V
V DD fall time rate
20
∞
Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE
5.3.4 Embedded reference voltage
The parameters given in Table 13 are derived from tests performed under ambient
temperature and V DD supply voltage conditions summarized in Table 10.
Table 13. Embedded internal reference voltage
Symbol Parameter
Conditions Min Typ Max Unit V REFINT
Internal reference voltage –40 °C < T A < +105 °C 1.16 1.20 1.26V
–40 °C < T A < +85 °C
1.16 1.20 1.24T S_vrefint
(1)
1.Shortest sampling time can be determined in the application by multiple iterations.ADC sampling time when reading the internal reference voltage
-- 5.1
17.1(2)
2.Guaranteed by design.
µs
V RERINT
(2)
Internal reference voltage spread over the temperature range
V DD = 3 V ±10 mV
--10mV T Coeff (2)
Temperature coefficient
-
-
-
100
ppm/°C。