MEMORY存储芯片STM32F103RCT6中文规格书

Features•Core: Arm® 32-bit Cortex®-M3 CPU–72 MHz maximum frequency, 1.25DMIPS/MHz (Dhrystone 2.1) performance at 0 wait statememory access–Single-cycle multiplication and hardwaredivision•Memories–256 to 512 Kbytes of Flash memory–up to 64 Kbytes of SRAM–Flexible static memory controller with 4 Chip Select. Supports Compact Flash, SRAM,PSRAM, NOR and NAND memories–LCD parallel interface, 8080/6800 modes •Clock, reset and supply management – 2.0 to 3.6V application supply and I/Os–POR, PDR, and programmable voltage detector (PVD)–4-to-16 MHz crystal oscillator–Internal 8 MHz factory-trimmed RC–Internal 40 kHz RC with calibration–32 kHz oscillator for RTC with calibration •Low power–Sleep, Stop and Standby modes–V BAT supply for RTC and backup registers • 3 × 12-bit, 1 µs A/D converters (up to 21channels)–Conversion range: 0 to 3.6 V–Triple-sample and hold capability–Temperature sensor• 2 × 12-bit D/A converters•DMA: 12-channel DMA controller–Supported peripherals: timers, ADCs, DAC, SDIO, I2Ss, SPIs, I2Cs and USARTs •Debug mode–Serial wire debug (SWD) & JTAG interfaces–Cortex®-M3 Embedded Trace Macrocell™•Up to 112 fast I/O ports–51/80/112 I/Os, all mappable on 16 external interrupt vectors and almost all 5V-tolerant •Up to 11 timers–Up to four 16-bit timers, each with up to 4IC/OC/PWM or pulse counter and quadrature(incremental) encoder input– 2 × 16-bit motor control PWM timers with dead-time generation and emergency stop– 2 × watchdog timers (Independent and Window)–SysTick timer: a 24-bit downcounter– 2 × 16-bit basic timers to drive the DAC•Up to 13 communication interfaces–Up to 2 × I2C interfaces (SMBus/PMBus)–Up to 5 USARTs (ISO 7816 interface, LIN, IrDA capability, modem control)–Up to 3 SPIs (18 Mbit/s), 2 with I2S interface multiplexed–CAN interface (2.0B Active)–USB 2.0 full speed interface–SDIO interface•CRC calculation unit, 96-bit unique ID •ECOPACK® packagesTable 1.Device summary Reference Part numberSTM32F103xCSTM32F103RC STM32F103VCSTM32F103ZCSTM32F103xDSTM32F103RD STM32F103VDSTM32F103ZDSTM32F103xESTM32F103RE STM32F103ZESTM32F103VE找Memory、FPGA、二三极管、连接器、模块、光耦、电容电阻、单片机、处理器、晶振、传感器、滤波器，上深圳市美光存储技术有限公司July 2018DS5792 Rev 13STM32F103xC, STM32F103xD, STM32F103xE Electrical characteristicsElectrical characteristics STM32F103xC, STM32F103xD, STM32F103xEDS5792 Rev 135.3 Operating conditions5.3.1General operating conditionsTable 9. Thermal characteristicsSymbol RatingsValue Unit T STG Storage temperature range –65 to +150°C T JMaximum junction temperature150°CTable 10. General operating conditionsSymbol ParameterConditionsMin Max Unitf HCLK Internal AHB clock frequency -0 72MHz f PCLK1Internal APB1 clock frequency -0 36f PCLK2Internal APB2 clock frequency -0 72V DDStandard operating voltage -2 3.6V V DDA (1)1.When the ADC is used, refer to Table 59: ADC characteristics .Analog operating voltage(ADC not used)Must be the same potential as V DD (2)2.It is recommended to power V DD and V DDA from the same source. A maximum difference of 300mVbetween V DD and V DDA can be tolerated during power-up and operation.2 3.6VAnalog operating voltage (ADC used)2.43.6V BATBackup operating voltage- 1.8 3.6V P DPower dissipation at T A = 85°C for suffix 6 or T A = 105°C for suffix 7(3)3.If T A is lower, higher P D values are allowed as long as T J does not exceed T J max (see Table 6.7: Thermalcharacteristics on page 132).LQFP144-666mW LQFP100-434LQFP64-444LFBGA100-500LFBGA144-500WLCSP64-400T AAmbient temperature for 6 suffix versionMaximum power dissipation -4085°C Low-power dissipation (4)4.In low-power dissipation state, T A can be extended to this range as long as T J does not exceed T J max (seeTable 6.7: Thermal characteristics on page 132).-40105Ambient temperature for 7 suffix versionMaximum power dissipation -40105°CLow-power dissipation (4)-40125T JJunction temperature range6 suffix version -40105°C7 suffix version-40125STM32F103xC, STM32F103xD, STM32F103xE Electrical characteristics5.3.2 Operating conditions at power-up / power-downThe parameters given in Table 11 are derived from tests performed under the ambienttemperature condition summarized in Table 10.Table 11. Operating conditions at power-up / power-downSymbol ParameterConditionsMin Max Unit t VDDV DD rise time rate -0∞µs/VV DD fall time rate20∞Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE5.3.4 Embedded reference voltageThe parameters given in Table 13 are derived from tests performed under ambienttemperature and V DD supply voltage conditions summarized in Table 10.Table 13. Embedded internal reference voltageSymbol ParameterConditions Min Typ Max Unit V REFINTInternal reference voltage –40 °C < T A < +105 °C 1.16 1.20 1.26V–40 °C < T A < +85 °C1.16 1.20 1.24T S_vrefint(1)1.Shortest sampling time can be determined in the application by multiple iterations.ADC sampling time when reading the internal reference voltage-- 5.117.1(2)2.Guaranteed by design.µsV RERINT(2)Internal reference voltage spread over the temperature rangeV DD = 3 V ±10 mV--10mV T Coeff (2)Temperature coefficient---100ppm/°C。